Display device

By adopting a specific structure and process in the display device, the problem of difficult separation of light emitting elements under small size or high pixel pitch is solved, and efficient manufacturing and uniform light emitting effects are achieved.

CN120051115APending Publication Date: 2025-05-27SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202411678653.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-24
Filing Date
2024-11-22
Publication Date
2025-05-27

AI Technical Summary

Technical Problem

In a display device applied to a glasses-type device, if the display device is realized with a very small size or has a high pixel pitch, it is difficult to realize the light emitting element separated for each emission area by a mask process.

Method used

The light emitting element is formed without using a mask by a deposition and etching process by a deposition and etching process.

Benefits of technology

It is realized that the light emitting elements separated for each emission area are formed without a mask process, reducing the light emitting difference and improving the manufacturing efficiency of the display device.

✦ Generated by Eureka AI based on patent content.

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Abstract

A display device includes a first pixel electrode and a second pixel electrode spaced apart from each other on a substrate; a pixel defining layer on the substrate and partially exposing the first pixel electrode and the second pixel electrode; a first light emitting layer and a second light emitting layer on the first pixel electrode and the second pixel electrode, respectively; a first common electrode and a second common electrode on the first light emitting layer and the second light emitting layer, respectively, and spaced apart from each other; a first bank on the pixel defining layer; a second bank on the first bank, in which a side surface of the second bank protrudes more than a side surface of the first bank; and first and second inorganic films on the first and second common electrodes, respectively, and on the second bank, and spaced apart from each other and from a top surface of the second bank. A film quality of the first inorganic film and a film quality of the second inorganic film are different from each other.
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Description

[0001] This application claims priority to Korean Patent Application No. 10-2023-0165333, filed on November 24, 2023, and all benefits derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] Embodiments of the present disclosure relate to a display device. Background Art

[0003] With the development of information-oriented society, the demand for display devices for displaying images is increasing in various fields. For example, display devices are used in various electronic devices such as smart phones, digital cameras, laptop computers, navigation devices, and smart TVs. The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or an organic light-emitting display device. Among various types of flat panel display devices, in a light-emitting display device, since each of the pixels of the display panel includes a light-emitting element capable of emitting light by itself, an image can be displayed without using a backlight unit for providing light to the display panel.

[0004] Recently, the display device is used in a glasses-type device for providing virtual reality and augmented reality. In order to be used in the glasses-type device, the display device may be implemented in a very small size of less than 2 inches, or it may be desirable for the display device to have a high pixel pitch implemented with a high resolution. For example, the display device may have a high pixel pitch of more than 400 pixels per inch (PPI). Summary of the invention

[0005] In a display device applied to a glasses-type device, if the display device is implemented in a very small size or has a high pixel pitch, it may be difficult to implement a light-emitting element separated for each emission area through a mask process because the area of ​​the emission area in which the light-emitting element is set is reduced or quite small.

[0006] Embodiments of the present disclosure provide a display device capable of forming a light emitting element separated for each emission region without a mask process.

[0007] Embodiments of the present disclosure also provide a display device in which a difference in light emission per pixel is reduced, which may be caused by penetration of an etchant into a light emitting element in an etching process performed during a manufacturing process of the display device.

[0008] However, the features of the embodiments of the present disclosure are not limited to the features set forth herein. The above and other features of the embodiments of the present disclosure will become more apparent to those skilled in the art to which the present disclosure belongs by referring to the detailed description of the present disclosure given below.

[0009] According to an embodiment of the present disclosure, a display device includes: a first pixel electrode and a second pixel electrode, which are arranged to be spaced apart from each other on a substrate; a pixel defining layer, which is arranged on the substrate, wherein the pixel defining layer partially exposes the first pixel electrode and the second pixel electrode; a first light-emitting layer arranged on the first pixel electrode and a second light-emitting layer arranged on the second pixel electrode; a first common electrode arranged on the first light-emitting layer and a second common electrode arranged on the second light-emitting layer and spaced apart from the first common electrode; a first embankment, which is arranged on the pixel defining layer; a second embankment, which is arranged on the first embankment, wherein a side surface of the second embankment protrudes more than a side surface of the first embankment; a first inorganic film, which is arranged on the first common electrode and the second embankment and spaced apart from a top surface of the second embankment; and a second inorganic film, which is arranged on the second common electrode and the second embankment and spaced apart from a top surface of the second embankment and the first inorganic film, wherein a film quality of the first inorganic film and a film quality of the second inorganic film are different from each other.

[0010] In an embodiment, the first inorganic film and the second inorganic film may be different from each other in at least one selected from thickness, material, and refractive index.

[0011] In an embodiment, each of the first and second inorganic films may include a first layer, a second layer, and a third layer sequentially stacked therein, and the first layer of the first inorganic film and the first layer of the second inorganic film may contact a bottom surface of the second bank.

[0012] In an embodiment, one pair among a pair of first layers, a pair of second layers, and a pair of third layers of the first inorganic film and the second inorganic film may include materials that are the same as each other, and the other pair among a pair of first layers, a pair of second layers, and a pair of third layers of the first inorganic film and the second inorganic film include materials that are different from each other.

[0013] In an embodiment, the second layer of the first inorganic film may include silicon nitride, and the second layer of the second inorganic film may include silicon oxynitride.

[0014] In an embodiment, the first light emitting layer may emit blue light, and the second light emitting layer may emit red light or green light.

[0015] In an embodiment, the first layer of the first inorganic film may include the same material as the second layer of the first inorganic film and the first layer of the second inorganic film, and the first layer of the first inorganic film may include a material different from that of the third layer of the first inorganic film and the second layer of the second inorganic film.

[0016] In an embodiment, the refractive index of the second layer of the first inorganic film may be greater than the refractive index of the second layer of the second inorganic film, and the refractive index of the first layer of the second inorganic film may be greater than the refractive index of the second layer of the second inorganic film.

[0017] In an embodiment, the refractive index of the first layer of the first inorganic film and the refractive index of the second layer of the first inorganic film may be equal to each other, or the difference between the refractive index of the first layer of the first inorganic film and the refractive index of the second layer of the first inorganic film may be equal to or less than 0.1.

[0018] In an embodiment, a thickness of the first inorganic film and a thickness of the second inorganic film may be different from each other.

[0019] In an embodiment, a thickness of the second layer of the first inorganic film may be greater than a sum of a thickness of the first layer of the first inorganic film and a thickness of the third layer of the first inorganic film.

[0020] In an embodiment, the first layer of the first inorganic film may include the same material as the first layer of the second inorganic film, and the first layer of the first inorganic film may have the same refractive index and the same thickness as the first layer of the second inorganic film.

[0021] In an embodiment, the first layer of the first inorganic film and the first layer of the second inorganic film may face a side surface of the first bank, a side surface of the second bank, and a top surface of the second bank.

[0022] In an embodiment, the display device may further include: an organic encapsulation film disposed between the first inorganic film and a top surface of the second bank and between the second inorganic film and a top surface of the second bank.

[0023] According to an embodiment of the present disclosure, a display device includes: a first pixel electrode, a second pixel electrode, and a third pixel electrode, which are arranged to be spaced apart from each other on a substrate; a pixel defining layer, which is arranged on the substrate, wherein the pixel defining layer partially exposes the first pixel electrode, the second pixel electrode, and the third pixel electrode; a first light-emitting layer arranged on the first pixel electrode, a second light-emitting layer arranged on the second pixel electrode, and a third light-emitting layer arranged on the third pixel electrode; a first common electrode arranged on the first light-emitting layer, a second common electrode arranged on the second light-emitting layer and spaced apart from the first common electrode, and a third common electrode arranged on the third light-emitting layer and spaced apart from the first common electrode A third common electrode spaced apart; a first embankment disposed on the pixel defining layer; a second embankment disposed on the first embankment, wherein a side surface of the second embankment protrudes more than a side surface of the first embankment; a first inorganic film disposed on the first common electrode and the second embankment and spaced apart from a top surface of the second embankment; a second inorganic film disposed on the second common electrode and the second embankment and spaced apart from a top surface of the second embankment and the first inorganic film; and a third inorganic film disposed on the third common electrode and the second embankment and spaced apart from a top surface of the second embankment, the first inorganic film and the second inorganic film, wherein the first inorganic film has a film quality different from the film quality of the second inorganic film and the film quality of the third inorganic film.

[0024] In an embodiment, a film quality of the second inorganic film and a film quality of the third inorganic film may be different from each other.

[0025] In an embodiment, each of the first inorganic film, the second inorganic film, and the third inorganic film may include a first layer, a second layer, and a third layer sequentially stacked therein, and the second layer of the first inorganic film, the second layer of the second inorganic film, and the second layer of the third inorganic film may have different refractive indices from each other.

[0026] In an embodiment, the third layer of the first inorganic film, the third layer of the second inorganic film, and the third layer of the third inorganic film include the same material, and the third layer of the first inorganic film, the third layer of the second inorganic film, and the third layer of the third inorganic film may have different refractive indices from each other.

[0027] In an embodiment, the film quality of the third inorganic film may be the same as the film quality of the second inorganic film.

[0028] In an embodiment, the first layer, the second layer, and the third layer of the second inorganic film may include the same material, thickness, and refractive index as the first layer, the second layer, and the third layer of the third inorganic film, respectively.

[0029] The display device according to the embodiment includes a multi-layer lower inorganic encapsulation film spaced apart for each emission region. In such an embodiment, the lower inorganic encapsulation film in one emission region has a different film quality or structure from the lower inorganic encapsulation film in another emission region, so that during the manufacturing process, the display device can be allowed to have high efficiency while effectively preventing penetration.

[0030] However, the effects according to the embodiments of the present disclosure are not limited to the above-exemplified effects, and various other effects are included herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and other features of the embodiments of the present disclosure will become more apparent by describing in detail the embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0032] Figure 1 is a perspective view illustrating a display device according to an embodiment;

[0033] Figure 2 Observed from the side Figure 1 A cross-sectional view of a display device;

[0034] Figure 3 is a plan view illustrating the arrangement of a light emitting element, a lower inorganic encapsulation film, and a second bank of a display device according to an embodiment;

[0035] Figure 4 is a cross-sectional view illustrating a portion of a display device according to an embodiment;

[0036] Figure 5 It is shown Figure 4 An enlarged view of a first emission region and surrounding light emitting element layers and thin film encapsulation layers;

[0037] Figure 6 It is shown Figure 4 An enlarged view of a second emission region and surrounding light emitting element layers and thin film encapsulation layers;

[0038] Figure 7 It is shown Figure 4 An enlarged view of a third emission region and surrounding light emitting element layers and thin film encapsulation layers;

[0039] Figure 8 is a cross-sectional view schematically showing a first inorganic film, a second inorganic film, and a third inorganic film of a lower inorganic encapsulating film;

[0040] Fig. 9 is a cross-sectional view illustrating penetration of an etchant or water into a light emitting element in a display device including a single-layer lower inorganic encapsulating film; and

[0041] Fig.10 is a cross-sectional view of permeation protection in a display device including a multi-layer lower inorganic encapsulation film. DETAILED DESCRIPTION

[0042] The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which preferred embodiments of the present invention are shown. However, the present invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be comprehensive and complete, and will fully convey the scope of the present invention to those skilled in the art. The same reference numerals refer to the same elements throughout.

[0043] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0044] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first element discussed below may be referred to as the second element without departing from the teachings of the present invention. Similarly, the second element may also be referred to as the first element.

[0045] The terms used herein are only for the purpose of describing specific embodiments, and are not intended to be limited. As used herein, "one", "the (described)" and "at least one" do not represent quantitative restrictions, and are intended to include both singular and plural numbers, unless the context clearly indicates otherwise. Therefore, in the claim, mentioning "one" element and then mentioning "described" element includes one element and multiple elements. For example, "element" has the same meaning as "at least one element", unless the context clearly indicates otherwise. "At least one" is not interpreted as being limited to "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the term "include" and / or its variants or "include" and / or its variants are used in this specification to indicate the presence of stated features, regions, wholes, steps, operations, elements and / or parts, but does not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, parts and / or their groups.

[0046] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as shown in the accompanying drawings. It will be understood that relative terms are intended to cover different orientations of the device in addition to the orientation depicted in the accompanying drawings. For example, if the device in one of the figures in the accompanying drawings is turned over, the element described as being on the "lower" side of the other elements will then be oriented to be on the "upper" side of the other elements. Therefore, depending on the specific orientation of the drawings, the term "lower" can cover both "lower" and "upper" orientations. Similarly, if the device in one of the figures in the accompanying drawings is turned over, the element described as being "below" or "below" the other elements will then be oriented to be "above" the other elements. Therefore, the term "below" or "below" can cover both upper and lower orientations.

[0047] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless explicitly defined in this article.

[0048] Embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of ideal embodiments. As such, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include deviations in shapes resulting, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. In addition, sharp corners shown may be rounded. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions, and are not intended to limit the scope of the present disclosure.

[0049] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings.

[0050] Figure 1 is a perspective view illustrating a display device 10 according to the embodiment.

[0051] refer to Figure 1 The display device 10 according to the embodiment may be included in an electronic device and may provide a picture displayed on the electronic device. The electronic device may refer to any electronic device that provides a display screen. Examples of electronic devices may include a television that provides a display screen, a laptop computer, a monitor, a billboard, an Internet of Things device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, smart glasses, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera or a portable camera, etc.

[0052] The shape of the display device 10 may be variously modified. In an embodiment, for example, the display device 10 may have a shape similar to a rectangular shape having short sides in the first direction DR1 and long sides in the second direction DR2. Corners where the short sides in the first direction DR1 and the long sides in the second direction DR2 intersect may be rounded to have a curvature, but are not limited thereto, and may be formed at a right angle. The planar shape of the display device 10 is not limited to a quadrilateral shape, and may be formed in a shape similar to another polygonal shape, a circular shape, or an elliptical shape.

[0053] In an embodiment, the display device 10 may include a display panel 100, a display driver 200, a circuit board 300, and a touch driver 400 (see FIG. Figure 2 ).

[0054] The display panel 100 may include a main area MA and a sub-area SBA.

[0055] The main area MA may include a display area DA including pixels for displaying an image and a non-display area NDA disposed around the display area DA. The display area DA may emit light from a plurality of emission areas or a plurality of opening areas. In an embodiment, for example, the display panel 100 may include a pixel circuit including a switching element, a pixel defining layer defining an emission area or an opening area, and a self-luminous element.

[0056] In an embodiment, for example, the self-luminous element may include at least one selected from an organic light emitting diode (LED) including an organic light emitting layer, a quantum dot LED including a quantum dot light emitting layer, an inorganic LED including an inorganic semiconductor, and a micro-LED, but is not limited thereto.

[0057] A plurality of pixels, a plurality of scan lines, a plurality of data lines, and a plurality of power lines may be provided in the display area DA. Each of the plurality of pixels may define a minimum unit of light emission, and the self-luminous element may be included in each pixel. The plurality of scan lines may supply a scan signal received from a scan driver (not shown) to the plurality of pixels. The plurality of data lines may supply a data voltage received from the display driver 200 to the plurality of pixels. The plurality of power lines may supply a power voltage received from the display driver 200 to the plurality of pixels.

[0058] The non-display area NDA may be an area outside the display area DA. The non-display area NDA may be defined as an edge area of ​​the main area MA of the display panel 100. The non-display area NDA may include a scan driver that supplies a scan signal to a scan line and a fan-out line that connects the display driver 200 to the display area DA.

[0059] The sub-area SBA may be an area extending from one side of the main area MA. The sub-area SBA may include a flexible material that can be bent, folded or curled. In an embodiment, for example, when the sub-area SBA is bent, the sub-area SBA may overlap with the main area MA in the thickness direction (also referred to as the third direction) DR3. The sub-area SBA may include a display driver 200 and a pad portion connected to the circuit board 300. In another embodiment, the sub-area SBA may be omitted, and the display driver 200 and the pad portion may be arranged in the non-display area NDA.

[0060] The display driver 200 may output a signal and a voltage for driving the display panel 100. The display driver 200 may supply a data voltage to a data line. The display driver 200 may supply a power supply voltage to a power supply line and may supply a scan control signal to a scan driver. The display driver 200 may be formed as an integrated circuit (IC) and may be mounted on the display panel 100 by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic welding method. In an embodiment, for example, the display driver 200 may be disposed in a sub-area SBA and may overlap with the main area MA in a thickness direction (also referred to as a third direction) DR3 by bending of the sub-area SBA. In another embodiment, for example, the display driver 200 may be mounted on a circuit board 300.

[0061] The circuit board 300 may be attached to the pad portion of the display panel 100 by using an anisotropic conductive film (ACF). Leads of the circuit board 300 may be electrically connected to the pad portion of the display panel 100. The circuit board 300 may be a flexible printed circuit board, a rigid printed circuit board, or a flexible film such as a chip on film.

[0062] Figure 2 Observed from the side Figure 1 1 is a cross-sectional view of a display device 10. Specifically, Figure 2 Corresponding to the folded state Figure 1 A side view of a display device.

[0063] refer to Figure 2 In an embodiment, the display panel 100 may include a substrate SUB, a thin film transistor layer TFTL, a light emitting element layer EML, a thin film encapsulation layer TFEL, and a color filter layer CFL.

[0064] The substrate SUB may be a base substrate or a base member. The substrate SUB may be a flexible substrate that can be bent, folded or curled. In an embodiment, for example, the substrate SUB may include a polymer resin such as polyimide (PI), but is not limited thereto. In another embodiment, for example, the substrate SUB may include a glass material or a metal material.

[0065] The thin film transistor layer TFTL may be disposed on the substrate SUB. The thin film transistor layer TFTL may include a plurality of thin film transistors constituting a pixel circuit of a pixel. The thin film transistor layer TFTL may further include a scan line, a data line, a power line, a scan control line, a fan-out line connecting the display driver 200 to the data line, and a lead connecting the display driver 200 to the pad portion. Each of the thin film transistors may include a semiconductor layer, a source electrode, a drain electrode, and a gate electrode. In an embodiment, for example, in the case where a scan driver is formed on one side of the non-display area NDA of the display panel 100, the scan driver may include a thin film transistor.

[0066] The thin film transistor layer TFTL may be disposed in the display area DA, the non-display area NDA, and the sub-area SBA. The scan line, the data line, the power line of the thin film transistor layer TFTL, and the thin film transistor of each pixel may be disposed in the display area DA. The scan control line and the fan-out line of the thin film transistor layer TFTL may be disposed in the non-display area NDA. The lead line of the thin film transistor layer TFTL may be disposed in the sub-area SBA.

[0067] The light emitting element layer EML may be disposed on the thin film transistor layer TFTL. The light emitting element layer EML may include a plurality of light emitting elements each including a first electrode, a second electrode and a light emitting layer for emitting light, and a pixel defining layer defining pixels. The plurality of light emitting elements of the light emitting element layer EML may be disposed in the display area DA.

[0068] In an embodiment, the light emitting layer may be an organic light emitting layer including an organic material. The light emitting layer may include a hole transport layer, an organic light emitting layer, and an electron transport layer. When the first electrode receives a voltage through the thin film transistor of the thin film transistor layer TFTL and the second electrode receives a cathode voltage, holes and electrons may be transferred to the organic light emitting layer through the hole transport layer and the electron transport layer, respectively, and may be combined with each other to emit light in the organic light emitting layer.

[0069] In another embodiment, the light emitting element may include a quantum dot LED including a quantum dot light emitting layer, an inorganic LED including an inorganic semiconductor, or a micro-LED.

[0070] The thin film encapsulation layer TFEL may cover the top and side surfaces of the light emitting element layer EML and may protect the light emitting element layer EML. The thin film encapsulation layer TFEL may include at least one inorganic film or / and at least one organic film for encapsulating the light emitting element layer EML.

[0071] The color filter layer CFL may be disposed on the thin film encapsulation layer TFEL. The color filter layer CFL may include a plurality of color filters corresponding to the plurality of emission regions, respectively. Each of the color filters may selectively transmit light of a specific wavelength, and may block or absorb light of different wavelengths. The color filter layer CFL may absorb a portion of light from outside the display device 10 to reduce reflected light due to external light. Accordingly, the color filter layer CFL may effectively prevent color distortion caused by reflection of external light.

[0072] In an embodiment where the color filter layer CFL is directly disposed on the thin film encapsulation layer TFEL, the display device 10 may not include a separate substrate for the color filter layer CFL. Accordingly, the thickness of the display device 10 may be relatively small.

[0073] In some embodiments, the display device 10 may further include an optical device. The optical device may emit or receive light in an infrared band, an ultraviolet band, or a visible light band. In an embodiment, for example, the optical device may be an optical sensor (such as a proximity sensor, an illumination sensor, a camera sensor, a fingerprint sensor, or an image sensor) that detects light incident on the display device 10.

[0074] Figure 3 is a plan view illustrating a portion of the display device 10 according to the embodiment. Figure 3 1 is a plan view illustrating the layout of the light emitting elements ED1 , ED2 , ED3 , lower inorganic encapsulating films (also simply referred to as inorganic films) TL1 , TL2 , and TL3 , and the second bank BN2 in the display area DA of the display device 10 .

[0075] refer to Figure 3 In an embodiment, the second bank BN2 may cover the display area DA and may expose a portion of the display area DA. An opening (by Figure 3 The lower inorganic encapsulation films TL1, TL2, and TL3 may cover the boundaries of the openings on the second bank BN2, and may cover the light emitting elements ED1, ED2, and ED3 within the openings.

[0076] although Figure 3An embodiment in which the exposed area not covered by the second bank BN2 has a circular shape is illustrated, but in another embodiment, the exposed area may have a polygonal shape such as a triangle, a square, or a hexagon, and the shapes of the lower inorganic encapsulation films TL1, TL2, and TL3 covering the exposed area and its periphery may also be changed. A portion of each of the lower inorganic encapsulation films TL1, TL2, and TL3 may be disposed at a level higher than that of the second bank BN2, and the light emitting elements ED1, ED2, and ED3 may be disposed at a level lower than that of the second bank BN2.

[0077] The plurality of light emitting elements ED1, ED2 and ED3 may be arranged as Type (e.g. Diamond Type). In an embodiment, for example, the first light emitting element ED1 and the third light emitting element ED3 may be disposed to be spaced apart from each other in the first direction DR1, and may be alternately disposed in the first direction DR1 and the second direction DR2. The second light emitting element ED2 may be spaced apart from other adjacent second light emitting elements ED2 in the first direction DR1 and the second direction DR2. The second light emitting element ED2 and the first light emitting element ED1 or the second light emitting element ED2 and the third light emitting element ED3 may be alternately arranged in any direction on a plane formed by the first direction DR1 and the second direction DR2. The shapes and layouts of the plurality of light emitting elements and the exposed areas not covered by the second bank BN2 are not limited to Figure 3 .

[0078] Figure 4 is a cross-sectional view illustrating a portion of a display device 10 according to an embodiment. Specifically, Figure 4 It is along Figure 3 1 is a cross-sectional view taken along line II′ of the display panel 100 and illustrates cross sections of a substrate SUB, a thin film transistor layer TFTL, a light emitting element layer EML, a thin film encapsulation layer TFEL, and a color filter layer CFL of the display panel 100 .

[0079] The thin film transistor layer TFTL may include a first buffer layer BF1, a lower metal layer BML, a second buffer layer BF2, a thin film transistor TFT, a gate insulating layer GI, a first interlayer insulating layer ILD1, a capacitor electrode CPE, a second interlayer insulating layer ILD2, a first connection electrode CNE1, a first passivation layer PAS1, a second connection electrode CNE2, and a second passivation layer PAS2.

[0080] The first buffer layer BF1 may be disposed on the substrate SUB. The first buffer layer BF1 may include an inorganic film capable of preventing penetration of air or water. In an embodiment, for example, the first buffer layer BF1 may include a plurality of inorganic films alternately stacked.

[0081] The lower metal layer BML may be disposed on the first buffer layer BF1. In an embodiment, for example, the lower metal layer BML may be formed as a single layer or a plurality of layers made of or including at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0082] The second buffer layer BF2 may cover the first buffer layer BF1 and the lower metal layer BML. The second buffer layer BF2 may include an inorganic film capable of preventing penetration of air or water. In an embodiment, for example, the second buffer layer BF2 may include a plurality of inorganic films alternately stacked.

[0083] The thin film transistor TFT may be disposed on the second buffer layer BF2 and may constitute a pixel circuit of each of the plurality of pixels. In an embodiment, for example, the thin film transistor TFT may be a switching transistor or a driving transistor of the pixel circuit. The thin film transistor TFT may include a semiconductor layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0084] The semiconductor layer ACT may be disposed on the second buffer layer BF2. The semiconductor layer ACT may overlap the lower metal layer BML and the gate electrode GE in the thickness direction DR3, and may be insulated from the gate electrode GE by the gate insulating layer GI. In a portion of the semiconductor layer ACT, the material of the semiconductor layer ACT may be made into a conductor to form a source electrode SE and a drain electrode DE.

[0085] The gate electrode GE may be disposed on the gate insulating layer GI. The gate electrode GE may overlap the semiconductor layer ACT in the thickness direction DR3 with the gate insulating layer GI interposed therebetween.

[0086] The gate insulating layer GI may be disposed on the semiconductor layer ACT. In an embodiment, for example, the gate insulating layer GI may cover the semiconductor layer ACT and the second buffer layer BF2 to insulate the gate electrode GE from the semiconductor layer ACT. The gate insulating layer GI may include a contact hole through which the first connection electrode CNE1 passes.

[0087] The first interlayer insulating layer ILD1 may cover the gate electrode GE and the gate insulating layer GI. The first interlayer insulating layer ILD1 may have a contact hole through which the first connection electrode CNE1 passes. The contact hole of the first interlayer insulating layer ILD1 may be connected to the contact hole of the gate insulating layer GI and the contact hole of the second interlayer insulating layer ILD2.

[0088] The capacitor electrode CPE may be disposed on the first interlayer insulating layer ILD1. The capacitor electrode CPE may overlap the gate electrode GE in the thickness direction DR3. The capacitor electrode CPE and the gate electrode GE may form a capacitor.

[0089] The second interlayer insulating layer ILD2 may cover the capacitor electrode CPE and the first interlayer insulating layer ILD1. The second interlayer insulating layer ILD2 may have a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second interlayer insulating layer ILD2 may be connected to the contact hole of the first interlayer insulating layer ILD1 and the contact hole of the gate insulating layer GI.

[0090] The first connection electrode CNE1 may be disposed on the second interlayer insulating layer ILD2. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be inserted into a contact hole provided in the second interlayer insulating layer ILD2, the first interlayer insulating layer ILD1, and the gate insulating layer GI to contact the drain electrode DE of the thin film transistor TFT.

[0091] The first passivation layer PAS1 may cover the first connection electrode CNE1 and the second interlayer insulating layer ILD2. The first passivation layer PAS1 may protect the thin film transistor TFT. The first passivation layer PAS1 may include a contact hole through which the second connection electrode CNE2 passes.

[0092] The second connection electrode CNE2 may be disposed on the first passivation layer PAS1. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 to the pixel electrodes AE1, AE2, and AE3 of the light emitting element ED. The second connection electrode CNE2 may be inserted into a contact hole formed in the first passivation layer PAS1 to contact the first connection electrode CNE1.

[0093] The second passivation layer PAS2 may cover the second connection electrode CNE2 and the first passivation layer PAS1. The second passivation layer PAS2 may have contact holes through which the pixel electrodes AE1, AE2, and AE3 of the light emitting element ED pass.

[0094] The light emitting element layer EML may be disposed on the thin film transistor layer TFTL. The light emitting element layer EML may include a light emitting element ED, a pixel defining layer PDL, a capping layer CAP, and a bank structure BNS. The light emitting element ED may include pixel electrodes AE1, AE2, and AE3, light emitting layers EL1, EL2, and EL3, and common electrodes CE1, CE2, and CE3 sequentially stacked therein.

[0095] Figure 5 It is shown Figure 4An enlarged view of the first emission area EA1 and the surrounding light emitting element layer EML and thin film encapsulation layer TFEL, Figure 6 It is shown Figure 4 an enlarged view of the second emission area EA2 and the surrounding light emitting element layer EML and thin film encapsulation layer TFEL, and Figure 7 It is shown Figure 4 An enlarged view of the third emission area EA3 and the surrounding light emitting element layer EML and thin film encapsulation layer TFEL.

[0096] Combination Figure 4 refer to Figures 5 to 7 , the display device 10 may include a plurality of emission areas EA1, EA2, and EA3 disposed in the display area DA. The emission areas EA1, EA2, and EA3 may include areas where light is emitted from the light emitting elements ED1, ED2, and ED3 and passes through the color filter layer CFL in the third direction DR3. The emission areas EA1, EA2, and EA3 may include a first emission area EA1, a second emission area EA2, and a third emission area EA3 that are spaced apart from each other and emit light of the same color or different colors.

[0097] In an embodiment, the areas or sizes of the first to third emission areas EA1, EA2, and EA3 may be the same as each other. In an embodiment, for example, in the display device 10, the first emission area EA1, the second emission area EA2, and the third emission area EA3 may have the same area. However, the present disclosure is not limited thereto. In an embodiment of the display device 10, the areas or sizes of the first to third emission areas EA1, EA2, and EA3 may be different from each other. In an embodiment, for example, the area of ​​the second emission area EA2 may be larger than the area of ​​the first emission area EA1 and the area of ​​the third emission area EA3, and the area of ​​the third emission area EA3 may be larger than the area of ​​the first emission area EA1. The intensity of light emitted from the corresponding emission areas EA1, EA2, and EA3 may vary according to the areas of the emission areas EA1, EA2, and EA3, and the areas of the emission areas EA1, EA2, and EA3 may be adjusted to control the color of the picture displayed on the display device 10. Although Figure 4 An embodiment in which the emission areas EA1 , EA2 , and EA3 have the same area as each other is illustrated, but the present disclosure is not limited thereto.

[0098] In an embodiment of the display device 10, a first emission area EA1, a second emission area EA2, and a third emission area EA3 disposed adjacent to each other may form a pixel group. A pixel group may include emission areas EA1, EA2, and EA3 that emit light of different colors to represent a white grayscale. However, the present disclosure is not limited thereto, and the combination of emission areas EA1, EA2, and EA3 constituting a pixel group may be variously modified according to the arrangement of the emission areas EA1, EA2, and EA3, the color of the light emitted from the emission areas EA1, EA2, and EA3, and the like.

[0099] A plurality of openings defined or formed in the bank structure BNS of the light emitting element layer EML are provided along the boundary of the bank structure BNS. The first bank BN1 and the second bank BN2 of the bank structure BNS may surround the emission regions EA1, EA2, and EA3. The openings may include the first to third emission regions EA1, EA2, and EA3.

[0100] The display device 10 may include a plurality of light emitting elements ED1, ED2, and ED3 disposed in different emission areas EA1, EA2, and EA3. The light emitting elements ED1, ED2, and ED3 may include a first light emitting element ED1 disposed in a first emission area EA1, a second light emitting element ED2 disposed in a second emission area EA2, and a third light emitting element ED3 disposed in a third emission area EA3.

[0101] The light emitting elements ED1, ED2 and ED3 may include pixel electrodes AE1, AE2 and AE3, light emitting layers EL1, EL2 and EL3, and common electrodes CE1, CE2 and CE3, respectively, and the light emitting layers EL1, EL2 and EL3 disposed in different emission regions EA1, EA2 and EA3 may emit light of different colors according to the materials of the light emitting layers EL1, EL2 and EL3. In an embodiment, for example, the first light emitting element ED1 disposed in the first emission region EA1 may emit a blue first light having a peak wavelength in the range of 440 nanometers (nm) to 480 nm, the second light emitting element ED2 disposed in the second emission region EA2 may emit a green second light having a peak wavelength in the range of 510 nm to 550 nm, and the third light emitting element ED3 disposed in the third emission region EA3 may emit a red third light having a peak wavelength in the range of 610 nm to 650 nm. The first to third emission regions EA1, EA2 and EA3 constituting one pixel group may include light emitting elements ED1, ED2 and ED3 emitting light of different colors, respectively, to express a white grayscale. Alternatively, the light-emitting layers EL1, EL2, and EL3 may each include two or more materials that emit light of different colors, so that one light-emitting layer may emit mixed light. In an embodiment, for example, the light-emitting layers EL1, EL2, and EL3 may each include a red light-emitting material and a green light-emitting material to emit yellow light, or may include a red light-emitting material, a green light-emitting material, and a blue light-emitting material to emit white light.

[0102] The pixel electrodes AE1, AE2, and AE3 may be disposed on the second passivation layer PAS2. The pixel electrodes AE1, AE2, and AE3 may be disposed in a plurality of emission areas EA1, EA2, and EA3, respectively (or disposed to overlap with a plurality of emission areas EA1, EA2, and EA3, respectively). The pixel electrodes AE1, AE2, and AE3 may include a first pixel electrode AE1 disposed in a first emission area EA1, a second pixel electrode AE2 disposed in a second emission area EA2, and a third pixel electrode AE3 disposed in a third emission area EA3. The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may be disposed on the second passivation layer PAS2 to be spaced apart from each other.

[0103] The pixel electrodes AE1, AE2, and AE3 may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2. Edges of the pixel electrodes AE1, AE2, and AE3 spaced apart from each other may be covered by the pixel defining layer PDL so that the first to third pixel electrodes AE1, AE2, and AE3 may be insulated from each other.

[0104] The pixel electrodes AE1, AE2 and AE3 may include a transparent electrode material and / or a conductive metal material. The metal material may be at least one selected from silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), lanthanum (La), titanium (Ti) and titanium nitride (TiN). The transparent electrode material may be at least one selected from indium tin oxide (ITO), indium zinc oxide (IZO) and indium tin zinc oxide (ITZO). The pixel electrodes AE1, AE2 and AE3 may have a multilayer structure of a transparent electrode material and a conductive metal material.

[0105] The pixel defining layer PDL may be disposed on the second passivation layer PAS2, the residual pattern RP, and the pixel electrodes AE1, AE2, and AE3. The pixel defining layer PDL may be disposed on the entire second passivation layer PAS2, and may cover the side surfaces of the pixel electrodes AE1, AE2, and AE3 and the residual pattern RP to partially expose the top surfaces of the pixel electrodes AE1, AE2, and AE3. In an embodiment, for example, the pixel defining layer PDL may expose the first pixel electrode AE1 in the first emission area EA1, and the first light emitting layer EL1 may be directly disposed on the first pixel electrode AE1.

[0106] The pixel defining layer PDL may include an inorganic insulating material. The pixel defining layer PDL may include at least one selected from silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, aluminum oxide, tantalum oxide, hafnium oxide, zinc oxide, and amorphous silicon, but the present disclosure is not limited thereto.

[0107] According to an embodiment, the pixel defining layer PDL may be disposed on the pixel electrodes AE1, AE2, and AE3, and may be spaced apart from the top surfaces of the pixel electrodes AE1, AE2, and AE3. The pixel defining layer PDL may partially overlap the top surfaces of the pixel electrodes AE1, AE2, and AE3 in the thickness direction DR3 of the substrate SUB, but may not be in direct contact with them, and a residual pattern RP may be disposed between the pixel defining layer PDL and the pixel electrodes AE1, AE2, and AE3. However, the pixel defining layer PDL may be in direct contact with the side surfaces of the pixel electrodes AE1, AE2, and AE3. The side surface of the pixel defining layer PDL may protrude toward the emission areas EA1, EA2, and EA3 more than the side surface of the second bank BN2.

[0108] The residual pattern RP may be disposed on an edge of each of the pixel electrodes AE1, AE2, and AE3. Due to the residual pattern RP, the pixel defining layer PDL may not be in direct contact with the top surface of the pixel electrodes AE1, AE2, and AE3. During the manufacturing process of the display device 10, the residual pattern RP may be formed by removing a portion of a sacrificial layer disposed on the pixel electrodes AE1, AE2, and AE3. The residual pattern RP may include a metal or oxide semiconductor material. In the accompanying drawings, only an embodiment in which the side surface of the residual pattern RP facing the emission areas EA1, EA2, and EA3 is recessed relative to the side surface of the pixel defining layer PDL is illustrated, but the present disclosure is not limited thereto. The side surface of the residual pattern RP may protrude from the side surface of the pixel defining layer PDL toward the emission areas EA1, EA2, and EA3, or may be aligned with the side surface of the pixel defining layer PDL.

[0109] The light-emitting layers EL1, EL2 and EL3 may be disposed on the pixel electrodes AE1, AE2 and AE3, respectively. The light-emitting layers EL1, EL2 and EL3 may be organic light-emitting layers including or made of organic materials, and may be formed on the pixel electrodes AE1, AE2 and AE3, respectively, by a deposition process. The light-emitting layers EL1, EL2 and EL3 may have a multilayer structure, and hole injection materials, hole transport materials, light-emitting materials, electron transport materials and / or electron injection materials may form or jointly define each of the light-emitting layers EL1, EL2 and EL3. When the thin film transistor TFT applies a predetermined voltage to the pixel electrodes AE1, AE2 and AE3 of the light-emitting elements ED1, ED2 and ED3, and the common electrodes CE1, CE2 and CE3 of the light-emitting elements ED1, ED2 and ED3 receive a common voltage or a cathode voltage, holes and electrons may be injected and transported, and may be recombined with each other in the light-emitting layers EL1, EL2 and EL3 to emit light.

[0110] The light-emitting layers EL1, EL2, and EL3 may include a first light-emitting layer EL1, a second light-emitting layer EL2, and a third light-emitting layer EL3, which are respectively arranged in different emission areas EA1, EA2, and EA3. The first light-emitting layer EL1 may be arranged on the first pixel electrode AE1 in the first emission area EA1, the second light-emitting layer EL2 may be arranged on the second pixel electrode AE2 in the second emission area EA2, and the third light-emitting layer EL3 may be arranged on the third pixel electrode AE3 in the third emission area EA3. The plurality of light-emitting layers EL1, EL2, and EL3 may emit light of different colors, or one light-emitting layer EL1, EL2, or EL3 may emit mixed light. In an embodiment, the first light-emitting layer EL1 may emit blue light having a peak wavelength in the range of 440nm to 480nm, the second light-emitting layer EL2 may emit green light having a peak wavelength in the range of 510nm to 550nm, and the third light-emitting layer EL3 may emit red light having a peak wavelength in the range of 610nm to 650nm. In another embodiment, the first light emitting layer EL1 may emit blue light, and the second light emitting layer EL2 may emit yellow light which is a mixture of red and green light. In another embodiment, the first light emitting layer EL1 may emit white light which is a mixture of red, green, and blue light.

[0111] The light emitting layers EL1, EL2, and EL3 may be disposed on the top surface of the pixel defining layer PDL. In an embodiment, the light emitting layers EL1, EL2, and EL3 may be disposed in the space between the pixel electrodes AE1, AE2, and AE3 and the pixel defining layer PDL, respectively. In an embodiment, the light emitting layers EL1, EL2, and EL3 may contact the pixel defining layer PDL, the residual pattern RP, and the pixel electrodes AE1, AE2, and AE3.

[0112] The common electrodes CE1, CE2, and CE3 may be disposed on the light emitting layers EL1, EL2, and EL3, respectively. The common electrodes CE1, CE2, and CE3 may include a transparent conductive material so that light generated in the light emitting layers EL1, EL2, and EL3 may be emitted. The common electrodes CE1, CE2, and CE3 may receive a common voltage or a low potential voltage. When the pixel electrodes AE1, AE2, and AE3 receive a voltage corresponding to the data voltage and the common electrodes CE1, CE2, and CE3 receive a low potential voltage, a potential difference is formed between the pixel electrodes AE1, AE2, and AE3 and the common electrodes CE1, CE2, and CE3, so that the light emitting layers EL1, EL2, and EL3 may emit light.

[0113] The common electrodes CE1, CE2, and CE3 may include a first common electrode CE1, a second common electrode CE2, and a third common electrode CE3 respectively disposed in different emission areas EA1, EA2, and EA3. The first common electrode CE1 may be disposed on the first light emitting layer EL1 in the first emission area EA1, the second common electrode CE2 may be disposed on the second light emitting layer EL2 in the second emission area EA2, and the third common electrode CE3 may be disposed on the third light emitting layer EL3 in the third emission area EA3. The first to third common electrodes CE1, CE2, and CE3 may be spaced apart from each other.

[0114] The capping layers CAP1, CAP2, and CAP3 may be disposed on the common electrodes CE1, CE2, and CE3, respectively. The capping layers CAP1, CAP2, and CAP3 may include an organic material or an inorganic insulating material, and may have a single-layer structure or a multi-layer structure. The capping layers CAP1, CAP2, and CAP3 may prevent the light-emitting elements ED1, ED2, and ED3 from being damaged by external air. In an embodiment, the capping layers CAP1, CAP2, and CAP3 may include a material such as α-NPD, NPB, TPD, m-MTDATA, Alq 3 , LiF and / or CuPc or an inorganic material such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and / or silicon oxynitride.

[0115] The capping layers CAP1, CAP2, and CAP3 may include first, second, and third capping layers CAP1, CAP2, and CAP3, respectively disposed in different emission areas EA1, EA2, and EA3. The first to third capping layers CAP1, CAP2, and CAP3 may be spaced apart from each other.

[0116] The display device 10 may include a plurality of embankment structures BNS disposed on the pixel defining layer PDL. The embankment structure BNS may have a structure in which embankments BN1 and BN2 of different materials are sequentially stacked, may include a plurality of openings including emission areas EA1, EA2, and EA3, and may be disposed to overlap with a light shielding layer to be described later. The light emitting elements ED1, ED2, and ED3 of the display device 10 may be disposed to overlap with the openings of the embankment structure BNS.

[0117] The bank structure BNS may include a first bank BN1 and a second bank BN2 sequentially stacked on the pixel defining layer PDL.

[0118] The first bank BN1 may be disposed on the pixel defining layer PDL. In a direction opposite to the direction facing the emission areas EA1, EA2, and EA3 (i.e., the direction toward the center of the corresponding emission area among the emission areas EA1, EA2, and EA3), the side surface of the first bank BN1 may be recessed than the side surface of the pixel defining layer PDL. In a direction opposite to the direction facing the emission areas EA1, EA2, and EA3, the side surface of the first bank BN1 may be recessed than the side surface of the second bank BN2 to be described later.

[0119] According to an embodiment, the first bank BN1 may include a metal material. In an embodiment, for example, the first bank BN1 may include aluminum (Al) or an alloy of aluminum (Al).

[0120] In an embodiment, the thickness of the first bank BN1 may be about 4000 angstroms. to When the above range is satisfied, it is possible to form the light emitting layers EL1, EL2, and EL3 and the common electrodes CE1, CE2, and CE3 spaced apart from each other by a deposition and etching process instead of a mask process.

[0121] According to an embodiment, the common electrodes CE1, CE2, and CE3 may be in direct contact with the side surface of the first bank BN1. The common electrodes CE1, CE2, and CE3 of the different light emitting elements ED1, ED2, and ED3 may be in direct contact with the first bank BN1, the first bank BN1 may include a metal material, and the common electrodes CE1, CE2, and CE3 may be electrically connected to each other through the first bank BN1.

[0122] The light emitting layers EL1, EL2, and EL3 may be in direct contact with the side surface of the first bank BN1. The contact area between the common electrodes CE1, CE2, and CE3 and the side surface of the first bank BN1 may be greater than the contact area between the light emitting layers EL1, EL2, and EL3 and the side surface of the first bank BN1. The common electrodes CE1, CE2, and CE3 may be disposed on the side surface of the first bank BN1 with a larger area than the light emitting layers EL1, EL2, and EL3, or may be disposed on the side surface of the first bank BN1 at a higher position than the light emitting layers EL1, EL2, and EL3. Since the common electrodes CE1, CE2, and CE3 of different light emitting elements ED1, ED2, and ED3 are electrically connected to each other through the first bank BN1, the common electrodes CE1, CE2, and CE3 may be allowed to contact the first bank BN1 with a larger area.

[0123] The second bank BN2 may be disposed on the first bank BN1. The second bank BN2 may include a tip TIP which is a region protruding toward the center of the corresponding emission region among the emission regions EA1, EA2, and EA3 than the first bank BN1. A side surface of the second bank BN2 may protrude toward the emission regions EA1, EA2, and EA3 than a side surface of the first bank BN1.

[0124] Since the side surface of the second bank BN2 has a shape protruding toward the center of the corresponding emission region among the emission regions EA1, EA2, and EA3 than the side surface of the first bank BN1, an undercut structure of the first bank BN1 may be formed under the tip TIP of the second bank BN2.

[0125] In the display device 10 according to the embodiment, since the embankment structure BNS includes a tip TIP protruding toward the center of the corresponding emission area among the emission areas EA1, EA2 and EA3, the light-emitting layers EL1, EL2 and EL3 and the common electrodes CE1, CE2 and CE3 can be formed by a deposition process and an etching process instead of a mask process. In addition, it is possible to form different layers separately in different emission areas EA1, EA2 and EA3 by a deposition process. In an embodiment, for example, even when the light-emitting layers EL1, EL2 and EL3 and the common electrodes CE1, CE2 and CE3 of the light-emitting elements ED1, ED2 and ED3 are formed by a deposition process without using a mask, the deposited material can be disconnected by the tip TIP of the second embankment BN2 through the embankment structure BNS interposed therebetween, without being connected between the emission areas EA1, EA2 and EA3. By forming a material for forming a specific layer on the entire surface of the display device 10 and then removing the layer formed in the undesirable area by etching, different layers can be formed separately in different emission areas EA1, EA2 and EA3. In an embodiment of the display device 10, different light-emitting elements ED1, ED2 and ED3 can be formed in different emission areas EA1, EA2 and EA3 through deposition and etching processes without using a mask process, and the components for the mask process provided in the display device 10 can be omitted to minimize the area of ​​the non-display area NDA.

[0126] The side shape of the bank structure BNS may be a structure formed due to a difference in etching rates caused by different materials of the first bank BN1 and the second bank BN2 during the etching process. According to an embodiment, the second bank BN2 may include a material having an etching rate slower than that of the first bank BN1, and the first bank BN1 may be further etched during the etching process to expose the bottom surface of the tip TIP of the second bank BN2, so that an undercut may be formed under the second bank BN2.

[0127] The second bank BN2 may include a metal material different from the metal material of the first bank BN1. In an embodiment, for example, the metal material of the second bank BN2 may be a material that is removed together with the metal material of the first bank BN1 by dry etching but has an etching rate much slower than that of the first bank BN1 when wet-etched or is not etched by wet etching. In an embodiment, the first bank BN1 may include aluminum (Al) or an alloy of aluminum (Al), and the second bank BN2 may include titanium (Ti) or an alloy of titanium (Ti).

[0128] The tip TIP of the second bank BN2 may overlap with the common electrodes CE1, CE2, and CE3 in the thickness direction DR3 perpendicular to the substrate SUB. In addition, the tip TIP of the second bank BN2 may overlap with the light-emitting layers EL1, EL2, and EL3 in the thickness direction DR3 perpendicular to the substrate SUB. In addition, the tip TIP of the second bank BN2 may overlap with the pixel defining layer PDL in the thickness direction DR3 perpendicular to the substrate SUB. The common electrodes CE1, CE2, and CE3 may be formed below the bottom surface of the tip TIP of the second bank BN2. One end and the other end of each of the common electrodes CE1, CE2, and CE3 may overlap with the second bank BN2 in the thickness direction DR3 of the substrate SUB. The maximum vertical distance from the substrate SUB to the common electrodes CE1, CE2, and CE3 may be less than the maximum vertical distance from the substrate SUB to the top surface of the first bank BN1.

[0129] The thin film encapsulation layer TFEL may be disposed on the light emitting elements ED1, ED2, and ED3 and the embankment structure BNS, and may cover the plurality of light emitting elements ED1, ED2, and ED3 and the embankment structure BNS. The thin film encapsulation layer TFEL may include at least one inorganic film for preventing oxygen or water from penetrating into the light emitting element layer EML. The thin film encapsulation layer TFEL may include at least one organic film for protecting the light emitting element layer EML from foreign matter such as dust.

[0130] In an embodiment, the thin film encapsulation layer TFEL may include a lower inorganic encapsulation film TFE1 , an organic encapsulation film TFE2 , and an upper inorganic encapsulation film TFE3 , which are sequentially stacked.

[0131] Each of the lower and upper inorganic encapsulating films TFE1 and TFE3 may include at least one inorganic insulating material. For example, the inorganic insulating material may include at least one selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0132] The organic encapsulation film TFE2 may include a polymer material. Examples of polymer materials may include acrylic resin, epoxy resin, polyimide, polyethylene, etc. In an embodiment, the organic encapsulation film TFE2 may include an acrylic resin such as polymethyl methacrylate or polyacrylic acid. The organic encapsulation film TFE2 may be formed by curing a monomer or applying a polymer.

[0133] The lower inorganic encapsulation film TFE1 may be disposed on the light emitting elements ED1, ED2, and ED3 and the embankment structure BNS. The lower inorganic encapsulation film TFE1 may include a first inorganic film TL1, a second inorganic film TL2, and a third inorganic film TL3 disposed to correspond to different emission areas EA1, EA2, and EA3, respectively. The first inorganic film TL1, the second inorganic film TL2, and the third inorganic film TL3 may include an inorganic insulating material to cover the light emitting elements ED1, ED2, and ED3, respectively. The first inorganic film TL1, the second inorganic film TL2, and the third inorganic film TL3 may effectively prevent the light emitting elements ED1, ED2, and ED3 from being damaged by external air.

[0134] Since the lower inorganic encapsulation film TFE1 (TL1, TL2, TL3) can be formed by a chemical vapor deposition (CVD) method, it can be formed along the step difference of the deposited layer. In an embodiment, for example, the first inorganic film TL1, the second inorganic film TL2, and the third inorganic film TL3 can form a thin film even under the undercut caused by the tip TIP of the embankment structure BNS. The lower inorganic encapsulation films TL1, TL2, and TL3 can be arranged along the top surface, side surface, and bottom surface of the second embankment BN2, the side surface of the first embankment BN1, and the top surface of the common electrodes CE1, CE2, and CE3.

[0135] The lower inorganic encapsulation film TFE1 may include a plurality of inorganic films TL1, TL2, and TL3 spaced apart from each other, and the inorganic films TL1, TL2, and TL3 may be disposed in the emission areas EA1, EA2, and EA3, respectively. The first inorganic film TL1 may be disposed only on the first light-emitting element ED1 and the dike structure BNS of its periphery without overlapping the second light-emitting element ED2 and the third light-emitting element ED3. The second inorganic film TL2 may be disposed only on the second light-emitting element ED2 and the dike structure BNS of its periphery without overlapping the first light-emitting element ED1 and the third light-emitting element ED3. The third inorganic film TL3 may be disposed only on the third light-emitting element ED3 and the dike structure BNS of its periphery without overlapping the first light-emitting element ED1 and the second light-emitting element ED2.

[0136] The first inorganic film TL1 may be formed after forming the first common electrode CE1, the second inorganic film TL2 may be formed after forming the second common electrode CE2, and the third inorganic film TL3 may be formed after forming the third common electrode CE3. The first inorganic film TL1, the second inorganic film TL2, and the third inorganic film TL3 may be spaced apart from each other on the bank structure BNS.

[0137] The lower inorganic encapsulation films TL1, TL2 and TL3 may cover the light emitting elements ED1, ED2 and ED3 and the second bank BN2 around them while being spaced apart from the top surface of the second bank BN2. The organic encapsulation film TFE2 may be disposed in a space between the lower inorganic encapsulation films TL1, TL2 and TL3 and the top surface of the second bank BN2.

[0138] In an embodiment, one of the first to third inorganic films TL1 to TL3 may have a film quality (i.e., a distinguishing characteristic, property, or attribute) different from that of another of the first to third inorganic films TL1 to TL3. In an embodiment, for example, one of the first to third inorganic films TL1 to TL3 may have a material and / or physical property (refractive index, thickness, etc.) different from that of another of the first to third inorganic films TL1 to TL3. In an embodiment, two of the first to third inorganic films TL1 to TL3 may have the same material as each other, but have different refractive indices from each other. Alternatively, two of the first to third inorganic films TL1 to TL3 may have the same refractive index as each other, but have different thicknesses from each other. Each of the first to third inorganic films TL1 to TL3 may include several materials, and when some of the materials of one film are not shared with the materials of the other films, the materials of the two films may be understood to be different from each other.

[0139] Two of the first to third inorganic films TL1 to TL3 may have the same film quality as each other, while another of the first to third inorganic films TL1 to TL3 may have a different film quality. In an embodiment, for example, the first inorganic film TL1 may have a film quality different from the film quality of the second inorganic film TL2 and the film quality of the third inorganic film TL3, while the second inorganic film TL2 and the third inorganic film TL3 may have the same film quality as each other. Alternatively, the film qualities of the first to third inorganic films TL1 to TL3 may be different from each other. The first inorganic film TL1 and the second inorganic film TL2 may be different from each other in at least one of thickness, material, and refractive index. In addition, the third inorganic film TL3 may be different from the first inorganic film TL1 and the second inorganic film TL2 in at least one aspect selected from thickness, material, and refractive index, or all of the thickness, material, and refractive index of the third inorganic film TL3 may be the same as all of the thickness, material, and refractive index of one of the first inorganic film TL1 and the second inorganic film TL2.

[0140] Figure 8 Schematically shows a cross-sectional view of the first inorganic film TL1, the second inorganic film TL2 and the third inorganic film TL3. Figure 8 As shown in , the thickness (t11+t12+t13) of the first inorganic film TL1 may be different from the thickness (t21+t22+t23) of the second inorganic film TL2. The thickness (t21+t22+t23) of the second inorganic film TL2 may be the same as the thickness (t31+t32+t33) of the third inorganic film TL3.

[0141] Each of the first to third inorganic films TL1 to TL3 may have a multilayer structure of two or more layers. In an embodiment, each of the first to third inorganic films TL1 to TL3 may include a first layer disposed on the light emitting element ED1, ED2, or ED3, a second layer disposed on the first layer, and a third layer disposed on the second layer.

[0142] Hereinafter, the first to third inorganic films TL1 to TL3 each having a structure consisting of three or more layers will be described as a representative, however, some layers may be omitted if necessary, and the multilayer structure of each film may be changed if necessary.

[0143] refer to Figures 5 to 7, the first inorganic film TL1 may include a first layer 511 disposed on the first light emitting element ED1, a second layer 512 disposed on the first layer 511, and a third layer 513 disposed on the second layer 512. The second inorganic film TL2 may include a first layer 521 disposed on the second light emitting element ED2, a second layer 522 disposed on the first layer 521, and a third layer 523 disposed on the second layer 522. The third inorganic film TL3 may include a first layer 531 disposed on the third light emitting element ED3, a second layer 532 disposed on the first layer 531, and a third layer 533 disposed on the second layer 532.

[0144] The first layers 511, 521, and 531 located at the lower portion of the first to third inorganic films TL1 to TL3 may surround the opening of the bank structure BNS and may face the side surface and top surface of the second bank BN2. The first layers 511, 521, and 531 of the first to third inorganic films TL1 to TL3 may contact the bottom surface of the tip TIP of the second bank BN2 and the side surface of the first bank BN1.

[0145] Fig. 9 is a cross-sectional view illustrating the penetration of an etchant or water into the light-emitting element ED in the display device 10. The encapsulation characteristics of the lower inorganic encapsulation film TL1' below the tip TIP of the second bank BN2 have a significant influence on the penetration into the light-emitting element ED. In the case where the lower inorganic encapsulation film TL1' is a single layer made of a single material, the display device 10 may have high luminous efficiency and visibility change characteristics, but its encapsulation characteristics may be poor. Alternatively, the encapsulation characteristics may be high, but the luminous efficiency and visibility change characteristics may be poor.

[0146] Fig.10 1 is a cross-sectional view of permeation protection in a display device 10 including a multi-layered first inorganic film TL1. When the first inorganic film TL1 is formed of various materials into a multi-layered structure, each layer can be arranged according to the properties of the material to obtain a display device 10 improved in terms of encapsulation characteristics, luminous efficiency, and visibility change characteristics.

[0147] The first layers 511, 521, and 531 of the first to third inorganic films TL1 to TL3 contacting the bottom surface of the tip TIP of the second bank BN2 may have a material and / or physical properties with high encapsulation characteristics. Fig.10 As shown in FIG. 1 , the etchant or water cannot penetrate between the tip TIP of the second bank BN2 and the first layer 511 of the first inorganic film TL1, so that the penetration can be prevented. In an embodiment, the first layers 511, 521, and 531 of the first to third inorganic films TL1 to TL3 may include silicon nitride (SiN x ), and can have a high refractive index.

[0148] In an embodiment, the first layers 511, 521, and 531 of the first to third inorganic films TL1 to TL3 may have the same film properties as each other. The first layer 511 of the first inorganic film TL1, the first layer 521 of the second inorganic film TL2, and the first layer 531 of the third inorganic film TL3 may have the same material, the same refractive index, and the same thickness as each other.

[0149] The second layers 512 , 522 , and 532 and the third layers 513 , 523 , and 533 respectively disposed on the first layers 511 , 521 , and 531 of the first to third inorganic films TL1 to TL3 may include appropriate materials according to physical properties required for the emission areas EA1 , EA2 , and EA3 .

[0150] In an embodiment in which one of the first to third inorganic films TL1 to TL3, each having a multilayer structure, has a film quality different from that of the other, the multilayer structures of the two films may be different from each other. Alternatively, the two films may have the same layer structure as each other, but the materials or physical properties of some of their corresponding layers may be different from each other. In an embodiment, for example, one of a pair of first layers 511 and 521, a pair of second layers 512 and 522, and a pair of third layers 513 and 523 of the first inorganic film TL1 and the second inorganic film TL2 may include the same material as each other, while the other pair thereof may include materials different from each other. Alternatively, one of a pair of first layers 511 and 521, a pair of second layers 512 and 522, and a pair of third layers 513 and 523 of the first inorganic film TL1 and the second inorganic film TL2 may include the same material as each other, but may have physical properties (e.g., thickness, refractive index, etc.) different from each other.

[0151] In an embodiment, two films of the first to third inorganic films TL1 to TL3 may have the same film quality as each other, and another film of the first to third inorganic films TL1 to TL3 may have a film quality different from the film quality of the two films. The two films having the same film quality may have the same multilayer structure, and the material and physical properties of each layer of the two films may be the same as each other. In an embodiment, for example, the second inorganic film TL2 and the third inorganic film TL3 may have the same film quality as each other, and the first layer 521, the second layer 522, and the third layer 523 of the second inorganic film TL2 may include the same material, thickness, and refractive index as the first layer 531, the second layer 532, and the third layer 533 of the third inorganic film TL3, respectively.

[0152] The second layers 512, 522, and 532 of the first to third inorganic films TL1 to TL3 may have thicknesses t12, t22, and t32, respectively, which are significantly greater than the thicknesses of the first layers 511, 521, and 531 and the thicknesses of the third layers 513, 523, and 533. The thickness of the second layer 512 of the first inorganic film TL1 may be greater than the sum of the thicknesses of the first layer 511 and the third layer 513 thereof, the thickness of the second layer 522 of the second inorganic film TL2 may be greater than the sum of the thicknesses of the first layer 521 and the third layer 523 thereof, and the thickness of the second layer 532 of the third inorganic film TL3 may be greater than the sum of the thicknesses of the first layer 531 and the third layer 533 thereof. The second layers 512, 522, and 532 of the first to third inorganic films TL1 to TL3 may affect the main physical properties of the lower inorganic encapsulation films TL1, TL2, and TL3, respectively.

[0153] In an embodiment, the second layer 512 of the first inorganic film TL1 may include a material and / or physical properties for improving lifespan, and the second layer 522 of the second inorganic film TL2 or the second layer 532 of the third inorganic film TL3 may include a material and / or physical properties for improving luminous efficiency and visibility. In such an embodiment, the first light-emitting layer EL1 disposed under the first inorganic film TL1 may emit blue light, the second light-emitting layer EL2 disposed under the second inorganic film TL2 may emit green light, and the third light-emitting layer EL3 disposed under the third inorganic film TL3 may emit red light. The physical properties of the second layers 512, 522, and 532 of the first to third inorganic films TL1 to TL3 may be different from each other, or the second layer 522 of the second inorganic film TL2 and the second layer 532 of the third inorganic film TL3 may have the same physical properties and the same materials as each other, and only the second layer 512 of the first inorganic film TL1 may have physical properties and / or materials different from those of the second layer 522 of the second inorganic film TL2 and the second layer 532 of the third inorganic film TL3.

[0154] In an embodiment, the second layer 512 of the first inorganic film TL1 may include silicon nitride (SiN x ), and the second layer 522 of the second inorganic film TL2 and the second layer 532 of the third inorganic film TL3 may include silicon oxynitride (SiO x N y). The refractive index of the second layer 512 of the first inorganic film TL1 may be different from the refractive index of the second layer 522 of the second inorganic film TL2 and the refractive index of the second layer 532 of the third inorganic film TL3. The second layer 512 of the first inorganic film TL1 may have a refractive index higher than the refractive index of the second layer 522 of the second inorganic film TL2 and the refractive index of the second layer 532 of the third inorganic film TL3. The second layer 522 of the second inorganic film TL2 may have the same refractive index as the refractive index of the second layer 532 of the third inorganic film TL3, or may have a refractive index lower than the refractive index of the second layer 532 of the third inorganic film TL3. The second layers 512, 522, and 532 of the first to third inorganic films TL1 to TL3 may have the same or similar thicknesses, but the present disclosure is not limited thereto.

[0155] The third layers 513, 523, and 533 of the first to third inorganic films TL1 to TL3 may be disposed on the second layers 512, 522, and 532, respectively. The third layers 513, 523, and 533 of the first to third inorganic films TL1 to TL3 may have a refractive index lower than that of the second layers 512, 522, and 532, respectively, so that luminous efficiency may be improved. The physical properties of the third layers 513, 523, and 533 of the first to third inorganic films TL1 to TL3 may be different from each other, or the third layer 523 of the second inorganic film TL2 and the third layer 533 of the third inorganic film TL3 may have the same physical properties as each other, and only the third layer 513 of the first inorganic film TL1 may have physical properties different from those of the third layer 523 of the second inorganic film TL2 and the third layer 533 of the third inorganic film TL3.

[0156] In an embodiment, the third layers 513, 523, and 533 of the first to third inorganic films TL1 to TL3 may include silicon oxynitride (SiO x N y). The refractive index of the third layer 513 of the first inorganic film TL1 may be different from the refractive index of the third layer 523 of the second inorganic film TL2 and the refractive index of the third layer 533 of the third inorganic film TL3. The third layer 513 of the first inorganic film TL1 may have a refractive index higher than the refractive index of the third layer 523 of the second inorganic film TL2 and the refractive index of the third layer 533 of the third inorganic film TL3. The third layer 523 of the second inorganic film TL2 may have the same refractive index as the third layer 533 of the third inorganic film TL3, or may have a refractive index lower than the refractive index of the third layer 533 of the third inorganic film TL3. The third layer 513 of the first inorganic film TL1 may have the same or similar thickness as the third layer 523 of the second inorganic film TL2 and the third layer 533 of the third inorganic film TL3. Alternatively, the thickness t13 of the third layer 513 of the first inorganic film TL1 may be smaller than the thickness t23 of the third layer 523 of the second inorganic film TL2 and the thickness t33 of the third layer 533 of the third inorganic film TL3 .

[0157] In an embodiment, the first layer 511 of the first inorganic film TL1, the first layer 521 of the second inorganic film TL2, the first layer 531 of the third inorganic film TL3, and the second layer 512 of the first inorganic film TL1 may include the same material or substance as each other. The second layer 522 of the second inorganic film TL2, the second layer 532 of the third inorganic film TL3, the third layer 513 of the first inorganic film TL1, the third layer 523 of the second inorganic film TL2, and the third layer 533 of the third inorganic film TL3 may include the same material or substance as each other, and may include a material or substance different from the material or substance of the first layer 511 of the first inorganic film TL1 described above. Even when a plurality of layers include the same material or substance as each other, their physical properties may be different depending on their formation process.

[0158] In an embodiment, the refractive index of the first layer 511 of the first inorganic film TL1 and the refractive index of the second layer 512 of the first inorganic film TL1 may be equal to or similar to each other. In another embodiment, the difference between the refractive index of the first layer 511 of the first inorganic film TL1 and the refractive index of the second layer 512 of the first inorganic film TL1 may be within 0.1.

[0159] In an embodiment, each of the first layer 511 of the first inorganic film TL1, the first layer 521 of the second inorganic film TL2, the first layer 531 of the third inorganic film TL3, and the second layer 512 of the first inorganic film TL1 may have a refractive index in the range of 1.8 to 2.0, and their refractive indices may be equal to or different from each other.

[0160] In an embodiment, each of the second layer 522 of the second inorganic film TL2, the second layer 532 of the third inorganic film TL3, the third layer 513 of the first inorganic film TL1, the third layer 523 of the second inorganic film TL2, and the third layer 533 of the third inorganic film TL3 may have a refractive index in the range of 1.4 to 1.8 or a refractive index in the range of 1.5 to 1.78, and their refractive indices may be equal to or different from each other. The third layer 513 of the first inorganic film TL1 may have a refractive index higher than that of the second layer 522 of the second inorganic film TL2. The third layer 533 of the third inorganic film TL3 may have a refractive index equal to or similar to that of the second layer 522 of the second inorganic film TL2. The third layer 523 of the second inorganic film TL2 may have a refractive index lower than those of the second layer 512 of the first inorganic film TL1, the second layer 522 of the second inorganic film TL2, the second layer 532 of the third inorganic film TL3, the third layer 513 of the first inorganic film TL1, and the third layer 533 of the third inorganic film TL3.

[0161] In an embodiment, the third layer 513 of the first inorganic film TL1 may have a refractive index lower than that of the second layer 532 of the third inorganic film TL3. In another embodiment, the third layer 513 of the first inorganic film TL1 may have a refractive index higher than that of the second layer 522 of the second inorganic film TL2 and the second layer 532 of the third inorganic film TL3.

[0162] In an embodiment, a first layer disposed in one film may have a higher refractive index than second and third layers of the one film, and the second layer of the corresponding film may have a higher refractive index than the third layer.

[0163] Thicknesses t11, t21, and t31 of the first to third inorganic films TL1 to TL3 may be smaller than thicknesses t12, t22, and t32 of the second layers 512, 522, and 532, but may be greater than thicknesses t13, t23, and t33 of the third layers 513, 523, and 533, respectively.

[0164] In the specification, the refractive index can be measured using an optical measuring instrument such as an ellipsometer or a spectroscopic reflectometer. The ellipsometer can measure the refractive index by measuring the amount of polarization change of the incident light and the reflected light relative to the inorganic film and calculating the thickness and complex refractive index of the inorganic film. The spectroscopic reflectometer can measure the refractive index of the inorganic film by comparing the intensity of the light obtained by changing the wavelength. In the specification, the thickness can be measured with an X-ray reflectometer (XRR) (D8ADVANCE Plus manufactured by Bruker), or measured with a TEM or SEM. The thickness and refractive index can be values ​​measured at normal temperature and pressure.

[0165] The organic encapsulating film TFE2 is disposed on the second bank BN2 and the lower inorganic encapsulating films TL1, TL2, and TL3. Portions of the organic encapsulating film TFE2 may be disposed between the top surface of the second bank BN2 and the first layers 511, 521, and 531 of the lower inorganic encapsulating films TL1, TL2, and TL3.

[0166] The organic encapsulating film TFE2 may be in contact with the second bank BN2. The second bank BN2 in a region overlapping with the light emitting layers EL1, EL2, and EL3 in the thickness direction DR3 of the substrate SUB may be in contact with the organic encapsulating film TFE2.

[0167] Portions of the organic encapsulating film TFE2 may be disposed between the lower inorganic encapsulating films TL1, TL2, and TL3 and the side surface of the second bank BN2. The side surface of the second bank BN2 may contact the organic encapsulating film TFE2 or the first layers 511, 521, and 531 of the lower inorganic encapsulating films TL1, TL2, and TL3.

[0168] The upper inorganic encapsulation film TFE3 may be disposed on the organic encapsulation film TFE 2. The upper inorganic encapsulation film TFE3 may include at least one selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0169] A light shielding layer (not shown) may be selectively provided on the thin film encapsulation layer TFEL. The light shielding layer may be located between the emission areas EA1, EA2, and EA3. The light shielding layer may include a light absorbing material. In an embodiment, for example, the light shielding layer may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one selected from lactam black, perylene black, and aniline black, but is not limited thereto. The light shielding layer may prevent visible light penetration and color mixing between the first to third emission areas EA1, EA2, and EA3, which results in an improvement in the color reproducibility of the display device 10.

[0170] The display device 10 may include a plurality of color filters CF1, CF2, and CF3 respectively disposed in the emission areas EA1, EA2, and EA3. Each of the plurality of color filters CF1, CF2, and CF3 may include a filter pattern region and a light shielding region. The filter pattern region may be formed to overlap with the emission areas EA1, EA2, and EA3 or the opening of the embankment structure BNS, and may form a light exit region from which light emitted from the emission areas EA1, EA2, and EA3 is emitted. The light shielding region is a region in which the plurality of color filters CF1, CF2, and CF3 are stacked so that light cannot be transmitted.

[0171] The color filters CF1, CF2, and CF3 may include a first color filter CF1, a second color filter CF2, and a third color filter CF3 that are arranged to correspond to different emission areas EA1, EA2, and EA3, respectively. The color filters CF1, CF2, and CF3 may include a colorant such as a dye or a pigment that absorbs light in a band other than a specific band, and may be arranged to correspond to the color of the light emitted from the emission areas EA1, EA2, and EA3, respectively. In an embodiment, for example, the first color filter CF1 may be a blue color filter that is arranged to overlap with the first emission area EA1 and transmits only a blue first light. The second color filter CF2 may be a green color filter that is arranged to overlap with the second emission area EA2 and transmits only a green second light, and the third color filter CF3 may be a red color filter that is arranged to overlap with the third emission area EA3 and transmits only a red third light.

[0172] In an embodiment of the display device 10, the color filters CF1, CF2, and CF3 are arranged to overlap each other so that the intensity of the reflected light caused by the external light can be reduced. In addition, the color of the reflected light caused by the external light can be controlled by adjusting the arrangement, shape, and area of ​​the color filters CF1, CF2, and CF3 in a plan view.

[0173] The protective layer OC may be disposed on the color filters CF1, CF2, and CF3 to flatten the tops of the color filters CF1, CF2, and CF3. The protective layer OC may be a colorless light-transmitting layer having no color in the visible light band. In an embodiment, for example, the protective layer OC may include a colorless light-transmitting organic material such as an acrylic resin.

[0174] The present invention should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be comprehensive and complete, and will fully convey the concept of the present invention to those skilled in the art.

[0175] While the invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the claims.

Claims

1. A display device, comprising: A first pixel electrode and a second pixel electrode are arranged to be spaced apart from each other on a substrate; A pixel defining layer, disposed on the substrate, wherein the pixel defining layer partially exposes the first pixel electrode and the second pixel electrode; A first light-emitting layer disposed on the first pixel electrode and a second light-emitting layer disposed on the second pixel electrode; a first common electrode disposed on the first light emitting layer and a second common electrode disposed on the second light emitting layer and spaced apart from the first common electrode; A first bank is disposed on the pixel defining layer; a second bank disposed on the first bank, wherein a side surface of the second bank protrudes more than a side surface of the first bank; a first inorganic film disposed on the first common electrode and the second bank and spaced apart from a top surface of the second bank; and a second inorganic film disposed on the second common electrode and the second bank and spaced apart from the top surface of the second bank and the first inorganic film, Here, a film quality of the first inorganic film and a film quality of the second inorganic film are different from each other.

2. The display device according to claim 1, wherein: The first inorganic film and the second inorganic film are different from each other in at least one aspect selected from thickness, material, and refractive index.

3. The display device according to claim 1, wherein: Each of the first inorganic film and the second inorganic film includes a first layer, a second layer, and a third layer sequentially stacked therein, and The first layer of the first inorganic film and the first layer of the second inorganic film are in contact with a bottom surface of the second bank.

4. The display device according to claim 3, wherein: A pair of the first layers, the second layers, and the third layers of the first inorganic film and the second inorganic film include the same material as each other, and The other pair among the pair of first layers, the pair of second layers, and the pair of third layers of the first inorganic film and the second inorganic film includes materials different from each other.

5. The display device according to claim 3, wherein: The second layer of the first inorganic film includes silicon nitride, and The second layer of the second inorganic film includes silicon oxynitride.

6. The display device according to claim 5, wherein: The first light emitting layer emits blue light, and The second light-emitting layer emits red light or green light.

7. The display device according to claim 3, wherein: The first layer of the first inorganic film includes the same material as the second layer of the first inorganic film and the first layer of the second inorganic film, and The first layer of the first inorganic film includes a material different from materials of the third layer of the first inorganic film and the second layer of the second inorganic film.

8. The display device according to claim 3, wherein: The refractive index of the second layer of the first inorganic film is greater than the refractive index of the second layer of the second inorganic film, and The refractive index of the first layer of the second inorganic film is greater than the refractive index of the second layer of the second inorganic film.

9. The display device according to claim 8, wherein: A refractive index of the first layer of the first inorganic film and a refractive index of the second layer of the first inorganic film are equal to each other, or A difference between the refractive index of the first layer of the first inorganic film and the refractive index of the second layer of the first inorganic film is equal to or less than 0.

1.

10. The display device according to claim 1, wherein: A thickness of the first inorganic film and a thickness of the second inorganic film are different from each other.

11. The display device according to claim 3, wherein: The thickness of the second layer of the first inorganic film is greater than the sum of the thickness of the first layer of the first inorganic film and the thickness of the third layer of the first inorganic film.

12. The display device according to claim 3, wherein: The first layer of the first inorganic film and the first layer of the second inorganic film include the same material, and The first layer of the first inorganic film and the first layer of the second inorganic film have the same refractive index and the same thickness.

13. The display device according to claim 3, wherein: The first layer of the first inorganic film and the first layer of the second inorganic film face the side surface of the first bank, the side surface of the second bank, and the top surface of the second bank.

14. The display device according to any one of claims 1 to 13, further comprising: An organic encapsulating film is disposed between the first inorganic film and the top surface of the second bank and between the second inorganic film and the top surface of the second bank.

15. A display device, comprising: The first pixel electrode, the second pixel electrode and the third pixel electrode are arranged to be spaced apart from each other on the substrate; a pixel defining layer, disposed on the substrate, wherein the pixel defining layer partially exposes the first pixel electrode, the second pixel electrode, and the third pixel electrode; a first light-emitting layer disposed on the first pixel electrode, a second light-emitting layer disposed on the second pixel electrode, and a third light-emitting layer disposed on the third pixel electrode; a first common electrode disposed on the first light emitting layer, a second common electrode disposed on the second light emitting layer and spaced apart from the first common electrode, and a third common electrode disposed on the third light emitting layer and spaced apart from the first common electrode and the second common electrode; A first bank is disposed on the pixel defining layer; a second bank disposed on the first bank, wherein a side surface of the second bank protrudes more than a side surface of the first bank; a first inorganic film disposed on the first common electrode and the second bank and spaced apart from a top surface of the second bank; a second inorganic film disposed on the second common electrode and the second bank and spaced apart from the top surface of the second bank and the first inorganic film; and a third inorganic film disposed on the third common electrode and the second bank and spaced apart from the top surface of the second bank, the first inorganic film, and the second inorganic film, The first inorganic film has a film quality different from a film quality of the second inorganic film and a film quality of the third inorganic film.

16. The display device according to claim 15, wherein: The film mass of the second inorganic film and the film mass of the third inorganic film are different from each other.

17. The display device according to claim 16, wherein: Each of the first inorganic film, the second inorganic film, and the third inorganic film includes a first layer, a second layer, and a third layer sequentially stacked therein, and The second layer of the first inorganic film, the second layer of the second inorganic film, and the second layer of the third inorganic film have different refractive indices from each other.

18. The display device according to claim 17, wherein: The third layer of the first inorganic film, the third layer of the second inorganic film, and the third layer of the third inorganic film include the same material as each other, and The third layer of the first inorganic film, the third layer of the second inorganic film, and the third layer of the third inorganic film have different refractive indices from each other.

19. The display device according to claim 15, wherein: The film mass of the third inorganic film is the same as the film mass of the second inorganic film.

20. The display device according to claim 19, wherein: Each of the first inorganic film, the second inorganic film, and the third inorganic film includes a first layer, a second layer, and a third layer sequentially stacked therein, and The first layer, the second layer, and the third layer of the second inorganic film include the same material, thickness, and refractive index as the first layer, the second layer, and the third layer of the third inorganic film, respectively.

Citation Information

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