Display device

Abstract

A display device includes: a plurality of pixels disposed in a display area; a (1-1) th constant voltage electrode provided in the peripheral region; a 2-1 constant voltage electrode disposed in the peripheral region so as to be spaced apart from the 1-1 constant voltage electrode; a connection electrode electrically connecting the (1-1) th constant voltage electrode and the (2-1) th constant voltage electrode, and provided in a layer different from the (1-1) th constant voltage electrode and the (2-1) th constant voltage electrode in a cross-sectional view; a 1-1 cladding layer covering at least a 1-1 side surface portion of the 1-1 constant-voltage electrode facing the 2-1 constant-voltage electrode; and a (1-2)-th constant-voltage electrode provided on the upper surface of the (1-1)-th cladding layer and in direct contact with at least a portion of the upper surface of the (1-1)-th constant-voltage electrode.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2023-0166868, filed on November 27, 2023, and all benefits derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a display device. Background Art

[0003] The display device may include a plurality of pixels disposed in a display region, electrodes disposed in a peripheral region for supplying electrical signals to the plurality of pixels, and lines electrically connecting the plurality of pixels and the electrodes.

[0004] When the surface of the conductive layer forming the electrode is damaged, the reliability of the electrode may be deteriorated. Accordingly, the display quality of the display device may be deteriorated. Summary of the invention

[0005] An object of the present disclosure is to provide a display device including an electrode having improved reliability.

[0006] According to an embodiment of the present disclosure, a display device includes: a plurality of pixels arranged in a display area; a 1-1 constant-voltage electrode arranged in a peripheral area; a 2-1 constant-voltage electrode arranged in the peripheral area to be separated from the 1-1 constant-voltage electrode; a connecting electrode electrically connecting the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode and arranged in a different layer from the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode in a cross-sectional view; a 1-1 covering layer at least covering a portion of a 1-1 side surface of the 1-1 constant-voltage electrode facing the 2-1 constant-voltage electrode; and a 1-2 constant-voltage electrode arranged on an upper surface of the 1-1 covering layer and directly contacting at least a portion of the upper surface of the 1-1 constant-voltage electrode.

[0007] In an embodiment, the display device may further include a 1-2 cladding layer covering at least a 1-2 side surface portion of the 1-2 constant-voltage electrode disposed on the 1-1 cladding layer.

[0008] In an embodiment, the display device may further include an organic cover layer completely covering the 1-2 cladding layer.

[0009] In an embodiment, the 1-1 cladding layer, the 1-2 cladding layer, and the organic cover layer may form a first dam structure, and the first dam structure may surround the display area in a plan view.

[0010] In an embodiment, the display device may further include a second dam structure disposed on the 1-2 th constant-voltage electrode in a cross-sectional view, and in a plan view, the second dam structure may be disposed between the display area and the first dam structure to surround the display area.

[0011] In an embodiment, in a cross-sectional view, the 1-2 th constant-voltage electrode may be interposed between the second dam structure and the 1-1 th constant-voltage electrode.

[0012] In an embodiment, the display device may further include: a 2-1 covering layer, covering at least a portion of the 2-1 side surface of the 2-1 constant-voltage electrode facing the 1-1 constant-voltage electrode; and a 2-2 constant-voltage electrode, arranged on the upper surface of the 2-1 covering layer and directly contacting at least a portion of the upper surface of the 2-1 constant-voltage electrode.

[0013] In an embodiment, the 2-1st cladding layer may completely cover each side surface portion of the 2-1st constant-voltage electrode including the 2-1st side surface portion.

[0014] In an embodiment, the 2-1 cladding layer may include an opening exposing at least a portion of an upper surface of the 2-1 constant-voltage electrode, and the 2-2 constant-voltage electrode may directly contact the upper surface of the 2-1 constant-voltage electrode exposed by the opening.

[0015] In an embodiment, the opening may be provided in plural.

[0016] In an embodiment, the display device may further include an encapsulation layer completely covering a plurality of pixels disposed in the display area, and the encapsulation layer may include a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first and second inorganic encapsulation layers.

[0017] In an embodiment, in a plan view, the first inorganic encapsulating layer and the second inorganic encapsulating layer may directly contact each other in a region between the 1-1th constant-voltage electrode and the 2-1th constant-voltage electrode.

[0018] In an embodiment, a CVD region in which the organic insulating material is not interposed between the connection electrode and the first inorganic encapsulation layer may be disposed in a region overlapping the connection electrode.

[0019] According to an embodiment of the present disclosure, a display device may include: a plurality of pixels arranged in a display area; a 1-1 constant-voltage electrode arranged in a peripheral area; a 2-1 constant-voltage electrode arranged in the peripheral area to be spaced apart from the 1-1 constant-voltage electrode; a connecting electrode electrically connecting the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode and arranged in a different layer from the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode in a cross-sectional view; a 1-1 coating layer at least covering a 1-1 side surface portion of the 1-1 constant-voltage electrode facing the 2-1 constant-voltage electrode; a 1-2 constant-voltage electrode arranged on an upper surface of the 1-1 coating layer and directly contacting at least a portion of the upper surface of the 1-1 constant-voltage electrode; a 1-2 coating layer at least covering a 1-2 side surface portion of the 1-2 constant-voltage electrode arranged on the 1-1 coating layer; and a 1-3 constant-voltage electrode arranged on an upper surface of the 1-2 coating layer and directly contacting at least a portion of the upper surface of the 1-2 constant-voltage electrode.

[0020] In an embodiment, the display device may further include an organic cover layer completely covering the 1-2 cladding layer.

[0021] In an embodiment, the 1-2 cladding layer and the organic cover layer may form a first dam structure, and the first dam structure may surround the display area in a plan view.

[0022] In an embodiment, the display device may further include: a 2-1 covering layer, covering at least a portion of the 2-1 side surface of the 2-1 constant-voltage electrode facing the 1-2 constant-voltage electrode; and a 2-2 constant-voltage electrode, arranged on the upper surface of the 2-1 covering layer and directly contacting at least a portion of the upper surface of the 2-1 constant-voltage electrode.

[0023] In an embodiment, the display device may further include an encapsulation layer completely covering a plurality of pixels disposed in the display area, and the encapsulation layer may include a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first and second inorganic encapsulation layers.

[0024] In an embodiment, in a plan view, the first inorganic encapsulating layer and the second inorganic encapsulating layer may directly contact each other in a region between the 1-1th constant-voltage electrode and the 2-1th constant-voltage electrode.

[0025] In an embodiment, a CVD region in which the organic insulating material is not interposed between the connection electrode and the first inorganic encapsulation layer may be disposed in a region overlapping the connection electrode.

[0026] In a display device according to an embodiment of the present disclosure, the first constant-voltage electrode may include a 1-1st constant-voltage electrode and a 1-2nd constant-voltage electrode stacked sequentially. Here, the 1-1st side surface portion of the 1-1st constant-voltage electrode may be covered by the 1-1st coating layer. Accordingly, during the formation process of forming the 1-2nd constant-voltage electrode on the 1-1st constant-voltage electrode, the 1-1st coating layer may be used to protect the 1-1st side surface portion of the 1-1st constant-voltage electrode. That is, damage to the 1-1st side surface portion, which is relatively vulnerable to damage, can be effectively prevented.

[0027] In a display device according to an embodiment of the present disclosure, the first constant-voltage electrode may include a 1-1 constant-voltage electrode, a 1-2 constant-voltage electrode, and a 1-3 constant-voltage electrode stacked sequentially. Here, the 1-2 side surface portion of the 1-2 constant-voltage electrode may be covered by the 1-2 coating layer. Accordingly, during the formation process of forming the 1-3 constant-voltage electrode on the 1-2 constant-voltage electrode, the 1-2 coating layer may be used to protect the 1-2 side surface portion of the 1-2 constant-voltage electrode. That is, damage to the relatively vulnerable 1-2 side surface portion can be effectively prevented. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other features of the present disclosure will become more apparent by further describing the embodiments of the present disclosure in detail with reference to the accompanying drawings, in which:

[0029] Figure 1A is a diagram showing a display device according to an embodiment of the present disclosure;

[0030] Figure 1B is a circuit diagram showing a pixel according to an embodiment of the present disclosure;

[0031] Figure 2 and Figure 3 is a diagram showing a structure of a pixel according to an embodiment of the present disclosure;

[0032] Figure 4 yes Figure 1A 1 is an enlarged view of a region A of FIG. 1 and is a view showing a constant voltage electrode according to an embodiment of the present disclosure;

[0033] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig. 10A , Fig. 10B , Fig.11A , Fig. 11B , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 and Fig.17It is shown Figure 4 Diagram of a constant voltage electrode;

[0034] Fig.18 and Fig.19 is a diagram showing a structure of a pixel according to another embodiment of the present disclosure;

[0035] Fig. 20 yes Figure 1A , and is a view showing a constant-voltage electrode according to another embodiment of the present disclosure; and

[0036] Fig.21 , Fig. 22 , Fig.23A , Fig. 23B , Fig.24 , Fig.25 , Fig.26 , Fig. 27 , Fig.28A , Fig.28B , Fig.29A , Fig.29B , Fig.30 , Fig.31 , Fig.32 , Fig.33 , Fig.34 and Fig.35 It is shown Fig. 20 Diagram of a constant voltage electrode. DETAILED DESCRIPTION

[0037] Hereinafter, preferred embodiments according to the present disclosure are described in detail with reference to the accompanying drawings. It should be noted that in the following description, only the parts necessary for understanding the operation according to the present disclosure are described, and the descriptions of other parts are omitted so as not to obscure the subject matter of the present disclosure. In addition, the present disclosure may be embodied in other forms, and is not limited to the embodiments described herein. However, the embodiments described herein are provided to be described in sufficient detail so that those skilled in the art to which the present disclosure belongs can easily realize the technical spirit of the present disclosure.

[0038] Throughout the specification, when a part is "connected" to another part, the situation not only includes the situation that the part is "directly connected" to the other part, but also includes the situation that the part is "indirectly connected" to the other part while another element is between the part and the other part. The terms used in this article are used to describe specific embodiments and are not intended to limit the present disclosure. Throughout the specification, when a certain part "includes", the situation means that the part can further include another component without excluding another component, unless otherwise stated. "At least any one of X, Y and Z" and "at least any one of the group consisting of X, Y and Z" can be interpreted as only X, only Y, only Z or any combination of two or more of X, Y and Z (for example, XYZ, XY, YZ and XZ). Here, "and / or" includes all combinations of one or more in the corresponding configuration.

[0039] Here, terms such as first and second can be used to describe various components, but these components are not limited by these terms. These terms are used to distinguish one component from another component. Therefore, a first component can refer to a second component within a certain range without departing from the scope disclosed in this article.

[0040] Spatially relative terms such as "below" and "on..." can be used for descriptive purposes to describe the relationship between one element or feature and another (some) element or feature as shown in the drawings. In addition to the orientation depicted in the drawings, spatially relative terms are intended to include other orientations in use, operation and / or manufacture. For example, when the device shown in the drawings is reversed, the element depicted as being "below" other elements or features is positioned "on" the other elements or features. Therefore, in an embodiment, the term "below" can include both upper and lower orientations. In addition, the device can face in other orientations (e.g., rotated 90 degrees or other orientations), and therefore, the spatially relative terms used in this article are interpreted accordingly.

[0041] Various embodiments are described with reference to the accompanying drawings that schematically illustrate ideal embodiments. Accordingly, it is expected that the shapes may vary, for example, depending on tolerances and / or manufacturing techniques. Therefore, the embodiments disclosed herein should not be construed as limited to the specific shapes shown, and should be construed to include changes in shape that occur, for example, due to manufacturing. As described above, the shapes shown in the accompanying drawings may not illustrate the actual shape of an area of ​​the device, and the current embodiments are not limited thereto.

[0042] Figure 1A is a diagram illustrating a display device according to an embodiment of the present disclosure.

[0043] refer to Figure 1A, the display device DD may include a display area DA and a peripheral area PA surrounding at least one side of the display area DA.

[0044] The pixels PX and a plurality of lines may be disposed in the display area DA. For example, the plurality of lines may include a scan signal line GL, an emission control signal line EML, a data line DL, and a power supply voltage line PL.

[0045] The pixel PX may receive an electrical signal from a plurality of lines. The pixel PX may emit light based on the electrical signal. Accordingly, an image may be displayed in the display area DA.

[0046] The scan signal line GL may transmit a scan signal to the pixel PX. For example, the scan signal line GL may extend in the second direction DR2 to electrically connect the pixel PX and a scan driving circuit unit (not shown) disposed in the peripheral area PA.

[0047] The emission control signal line EML may transmit an emission control signal to the pixel PX. For example, the emission control signal line EML may extend in the second direction DR2 to electrically connect the pixel PX and an emission control circuit unit (not shown) disposed in the peripheral area PA.

[0048] The data line DL may transmit a data voltage to the pixel PX. For example, the data line DL may extend in a first direction DR1 crossing the second direction DR2 to electrically connect the pixel PX and an integrated circuit chip IC disposed in the peripheral area PA.

[0049] The power voltage line PL may transmit a power voltage to the pixel PX. For example, the power voltage line PL may extend in the first direction DR1 to electrically connect the pixel PX and a constant voltage electrode disposed in the peripheral area PA.

[0050] In an embodiment, the power voltage lines PL may include vertical power voltage lines extending in the first direction DR1 and horizontal power voltage lines extending in the second direction DR2 and electrically connected to the vertical power voltage lines. In this case, the power voltage lines PL may have a grid shape disposed in the display area DA.

[0051] exist Figure 1A In the figure, for the convenience of description, one pixel PX, one scanning signal line GL, one emission control signal line EML, one data line DL and one power supply voltage line PL are shown, but the pixel PX, the scanning signal line GL, the emission control signal line EML, the data line DL and the power supply voltage line PL can be provided in multiple or more.

[0052] The first dam structure DAM1, the second dam structure DAM2, the integrated circuit chip IC, and the pad unit DP may be disposed in the peripheral area PA. Figure 1A Various circuit units (eg, a scan driving circuit unit and an emission control circuit unit, etc.), electrodes (eg, constant voltage electrodes), and wires not shown in the drawings may be disposed in the peripheral area PA.

[0053] The first dam structure DAM1 may completely surround the display area DA. The second dam structure DAM2 may completely surround the display area DA and may be disposed between the first dam structure DAM1 and the display area DA. Each of the first dam structure DAM1 and the second dam structure DAM2 may have a sufficient height in a third direction DR3 intersecting the first direction DR1 and the second direction DR2. Each of the first dam structure DAM1 and the second dam structure DAM2 may be used to block the pixels constituting the cover pixels PX. Figure 3 The encapsulation layer EN is the organic encapsulation layer EN2. Fig.17 and Fig.35 Describe this.

[0054] In an embodiment, the peripheral area PA may include a bending area BA. At least a portion of the display device DD may be bent in the bending area BA. Accordingly, the integrated circuit chip IC and the pad unit DP may be disposed on the rear surface of the display device DD.

[0055] The integrated circuit chip IC may provide various electrical signals to the pixels PX. For example, the integrated circuit chip IC may provide a data voltage to the pixels PX.

[0056] The pad unit DP may be connected to an external electronic device (not shown) and may receive various electrical signals from the external electronic device. Figure 1A Various lines and / or electrodes, not shown in the figure, transmit electrical signals received from an external electronic device to the pixels PX and / or the circuit units.

[0057] Figure 1B is a circuit diagram showing a pixel according to an embodiment of the present disclosure. Figure 1B As an example, it is shown that Figure 1A The pixel PX disposed in the i-th pixel row and the j-th pixel column among the plurality of pixels PX provided in the display area DA of FIG. Here, each of i and j is a natural number greater than zero.

[0058] refer to Figure 1B, the pixel PX may include at least one transistor and at least one capacitor. For example, the pixel PX may include the first to seventh transistors ST1, ST2, ST3, ST4, ST5, ST6 and ST7 and a storage capacitor Cst. However, this is exemplary, and those skilled in the art will be able to design a pixel PX including more or less transistors and / or more or less capacitors as needed. Hereinafter, as an example, a circuit is described in which some transistors ST1, ST2, ST3, ST4, ST5, ST6 and ST7 among the transistors ST1, ST2, ST5, ST6 and ST7 are P-type (PMOS) transistors and some other transistors ST3 and ST4 are N-type (NMOS) transistors. However, those skilled in the art will be able to design a circuit including only N-type transistors, a circuit including only P-type transistors, or a circuit including various combinations of P-type transistors and N-type transistors by changing the polarity of the voltage applied to the gate electrode. Here, P-type transistors are generally referred to as transistors in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the negative direction, and N-type transistors are generally referred to as transistors in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the positive direction. Transistors can be implemented in various forms such as thin film transistors (TFTs), field effect transistors (FETs), and bipolar junction transistors (BJTs).

[0059] A first electrode of the first transistor ST1 (driving transistor) may be connected to the first node N1, a second electrode of the first transistor ST1 may be connected to the second node N2, and a gate electrode of the first transistor ST1 may be connected to the third node N3. The first transistor ST1 may control the first power supply voltage line (e.g., Figure 1A The amount of driving current that flows from the power supply voltage line PL applied to the second power supply voltage ELVSS to the second power supply voltage line PL applied to the second power supply voltage line.

[0060] A first electrode of the second transistor ST2 (switching transistor) may be connected to the data line DLj, a second electrode of the second transistor ST2 may be connected to the first node N1, and a gate electrode of the second transistor ST2 may be connected to the first scan signal line GWLi. The second transistor ST2 may be turned on when a first scan signal of a gate-on level is supplied to the first scan signal line GWLi to electrically connect the data line DLj and the first electrode of the first transistor ST1.

[0061] The first electrode of the third transistor ST3 (diode-connected transistor) may be connected to the second node N2, the second electrode of the third transistor ST3 may be connected to the third node N3, and the gate electrode of the third transistor ST3 may be connected to the second scan signal line GCLi. The third transistor ST3 may be turned on when the second scan signal of the gate-on level is supplied to the second scan signal line GCLi to electrically connect the second electrode and the gate electrode of the first transistor ST1. That is, when the third transistor ST3 is turned on, the first transistor ST1 may be diode-connected.

[0062] A first electrode of the fourth transistor ST4 (gate initialization transistor) may be connected to the third node N3, a second electrode of the fourth transistor ST4 may be connected to the first initialization power line to which the first initialization power voltage VINT is applied, and a gate electrode of the fourth transistor ST4 may be connected to the third scan signal line GILi. The fourth transistor ST4 may be turned on when a third scan signal of a gate-on level is supplied to the third scan signal line GILi to supply the first initialization power voltage VINT to the third node N3.

[0063] A first electrode of the fifth transistor ST5 (a first light emitting transistor) may be connected to a first power voltage line (eg, Figure 1A The power supply voltage line PL of the fifth transistor ST5 is connected to the power supply voltage line PL of the fifth transistor ST5, the second electrode of the fifth transistor ST5 can be connected to the first node N1, and the gate electrode of the fifth transistor ST5 can be connected to the emission control signal line EMLi. The fifth transistor ST5 can be turned off when the emission control signal of the gate-off level is supplied to the emission control signal line EMLi, and can be turned on in other cases.

[0064] A first electrode of the sixth transistor ST6 (second light emitting transistor) may be connected to the second node N2, a second electrode of the sixth transistor ST6 may be connected to the fourth node N4, and a gate electrode of the sixth transistor ST6 may be connected to the emission control signal line EMLi. The sixth transistor ST6 may be turned off when an emission control signal of a gate-off level is supplied to the emission control signal line EMLi, and may be turned on in other cases.

[0065] A first electrode of the seventh transistor ST7 (light emitting initialization transistor) may be connected to the fourth node N4, a second electrode of the seventh transistor ST7 may be connected to a second initialization power line to which a second initialization power voltage AINT is applied, and a gate electrode of the seventh transistor ST7 may be connected to the fourth scan signal line GBLi. The seventh transistor ST7 may be turned on when a fourth scan signal of a gate-on level is supplied to the fourth scan signal line GBLi to supply the second initialization power voltage AINT to the fourth node N4. Here, the second initialization power voltage AINT may be set to a voltage lower than the data voltage.

[0066] The first electrode of the storage capacitor Cst may be connected to a first power voltage line (eg, Figure 1A The power supply voltage line PL of the first transistor ST1 is connected to the power supply voltage line PL of the first transistor ST1, and the second electrode of the storage capacitor Cst may be connected to the third node N3. The storage capacitor Cst may store a voltage corresponding to the data voltage and the threshold voltage of the first transistor ST1.

[0067] The light emitting element LD may be connected between the fourth node N4 and the second power supply voltage line to which the second power supply voltage ELVSS is applied. The pixel PX may include at least one light emitting element LD. Here, the type of the light emitting element LD is not particularly limited. For example, the light emitting element LD may be an organic light emitting element. As another example, the light emitting element LD may be an inorganic light emitting element including a micro LED or a quantum dot, etc. As yet another example, the light emitting element LD may be a composite light emitting element including an organic material and an inorganic material.

[0068] Figure 2 and Figure 3 is a diagram showing a pixel according to an embodiment of the present disclosure.

[0069] refer to Figure 2 The pixel PX may include a substrate SUB, a first conductive layer CL1, a first insulating layer IL1, a first active layer ATV1, a second insulating layer IL2, a second conductive layer CL2, a third insulating layer IL3, a third conductive layer CL3, a fourth insulating layer IL4, a second active layer ATV2, a fifth insulating layer IL5, a fourth conductive layer CL4, a sixth insulating layer IL6, a first SD conductive layer SD1, a first through-hole insulating layer VIA1, a second SD conductive layer SD2, and a second through-hole insulating layer VIA2, which are sequentially stacked.

[0070] The substrate SUB may be formed of various materials such as glass, polymer, and metal. The substrate SUB may be rigid or flexible according to a product to which the substrate SUB is applied.

[0071] The first active layer ATV1 and the second active layer ATV2 may be semiconductor layers. For example, the first active layer ATV1 may include a polysilicon semiconductor, and the second active layer ATV2 may include an oxide semiconductor. The first active layer ATV1 and the second active layer ATV2 may include a channel and an electrode of a transistor.

[0072] Each of the first conductive layer CL1, the second conductive layer CL2, the third conductive layer CL3, the fourth conductive layer CL4, the first SD conductive layer SD1 and the second SD conductive layer SD2 may be a single layer or multiple layers and may be formed using known conductors such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and platinum (Pt).

[0073] The first insulating layer IL1, the second insulating layer IL2, the third insulating layer IL3, the fourth insulating layer IL4, the fifth insulating layer IL5 and the sixth insulating layer IL6 may be interposed between adjacent conductive layers to electrically insulate the active layers ATV1 and ATV2, the first to fourth conductive layers CL1, CL2, CL3 and CL4 and the first SD conductive layer SD1. In this case, as required, the electrode patterns may be connected to each other through through holes formed in each of the insulating layers IL1, IL2, IL3, IL4, IL5 and IL6. The insulating layers IL1, IL2, IL3, IL4, IL5 and IL6 may include an inorganic insulating material. For example, the insulating layers IL1, IL2, IL3, IL4, IL5 and IL6 may include silicon oxide, silicon nitride or silicon oxynitride, etc.

[0074] The first through hole insulating layer VIA1 and the second through hole insulating layer VIA2 may be interposed between adjacent conductive layers so that the first SD conductive layer SD1, the second SD conductive layer SD2, and the conductive layer disposed on the second SD conductive layer SD2 (eg, Figure 3 The pixel electrode PXE) is electrically insulated. In this case, the electrode patterns may be connected to each other through through holes formed in the through-hole insulating layers VIA1 and VIA2 as needed. The through-hole insulating layers VIA1 and VIA2 may include an organic insulating material. For example, the through-hole insulating layers VIA1 and VIA2 may include epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0075] refer to Figure 3 , set in Figure 1A The pixel PX in the display area DA may include a polysilicon semiconductor transistor TFT1, an oxide semiconductor transistor TFT2, and a light emitting element LD. The polysilicon semiconductor transistor TFT1 may correspond to the reference Figure 1BAny one of the transistors ST1, ST2, ST5, ST6, and ST7 described above, and the oxide semiconductor transistor TFT2 may correspond to the reference Figure 1B Any one of transistors ST3 and ST4 described.

[0076] In an embodiment, a first barrier layer BRL1 may be disposed between the first conductive layer CL1 and the substrate SUB, and a second barrier layer BRL2 may be disposed between the first conductive layer CL1 and the first insulating layer IL1. The barrier layers BRL1 and BRL2 may block moisture and gas input from the outside. The barrier layers BRL1 and BRL2 may include a material that is the same as or similar to that of the insulating layers IL1, IL2, IL3, IL4, IL5, and IL6.

[0077] Partial patterns of the first active layer ATV1, partial patterns of the second conductive layer CL2, partial patterns of the third conductive layer CL3, and partial patterns of the first SD conductive layer SD1 may constitute a polysilicon semiconductor transistor TFT1. Partial patterns of the second active layer ATV2, partial patterns of the third conductive layer CL3, partial patterns of the fourth conductive layer CL4, and partial patterns of the first SD conductive layer SD1 may constitute an oxide semiconductor transistor TFT2. Figure 3 In the figure, for the convenience of description, only one polycrystalline silicon semiconductor transistor TFT1 and one oxide semiconductor transistor TFT2 are shown, but the pixel PX may include two or more polycrystalline silicon semiconductor transistors TFT1 and two or more oxide semiconductor transistors TFT2.

[0078] The light emitting element LD may include a pixel electrode PXE, a light emitting layer EL, and a common electrode CE.

[0079] The pixel electrode PXE may be disposed on the second via insulating layer VIA2. The pixel electrode PXE may be connected to a portion of a pattern of the second SD conductive layer SD2 electrically connected to the polysilicon semiconductor transistor TFT1 through a via hole.

[0080] A pixel defining layer PDL that separates the emission area of ​​each pixel PX may be disposed on the pixel electrode PXE. The pixel defining layer PDL may include an organic insulating material. For example, the pixel defining layer PDL may include polyacrylic acid compounds, polyimide compounds, fluorine-based carbon compounds, or benzocyclobutene compounds.

[0081] The pixel defining layer PDL may expose at least a portion of an upper surface of the pixel electrode PXE and may protrude away from the substrate SUB along a circumference of the pixel PX. The light emitting layer EL may be disposed in a pixel region surrounded by the pixel defining layer PDL.

[0082] The light emitting layer EL may include a material that can emit light. For example, the light emitting layer EL may include copper phthalocyanine, N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB), tris-(8-hydroxyquinoline)aluminum (Alq 3 ), poly(3,4-ethylenedioxythiophene) (PEDOT), poly(p-phenylenevinylene) (PPV) materials or polyfluorene materials, etc.

[0083] The light emitting layer EL may be provided as a single layer or a plurality of layers including various functional layers. When the light emitting layer EL is provided as a plurality of layers, the light emitting layer EL may have a structure in which at least two of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer, an electron transport layer (ETL), and an electron injection layer (EIL) are stacked.

[0084] According to an embodiment, at least a portion of the light emitting layer EL may be integrally formed across the plurality of pixel electrodes PXE, or may be individually formed to correspond to each of the plurality of pixel electrodes PXE.

[0085] The common electrode CE may be disposed on the light emitting layer EL. The common electrode CE may be disposed for each pixel PX, or may be disposed to cover the light emitting layer EL. Figure 1A The common electrode CE may include a transparent conductive material. For example, the common electrode CE may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or the like.

[0086] The encapsulation layer EN may be disposed on the common electrode CE. The encapsulation layer EN may block moisture and gas input from the outside. The encapsulation layer EN may be at least completely disposed on the Figure 1A in the display area DA so as to completely cover the display area Figure 1A Multiple pixels PX in the display area DA.

[0087] The encapsulation layer EN may include at least one organic encapsulation layer and an inorganic encapsulation layer disposed on the upper surface and the lower surface of the organic encapsulation layer, wherein the organic encapsulation layer is interposed between the inorganic encapsulation layers. For example, the encapsulation layer EN may include a first inorganic encapsulation layer EN1, a second inorganic encapsulation layer EN3, and an organic encapsulation layer EN2 interposed between the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3.

[0088] Figure 4 yes Figure 1A 2 is an enlarged view of a region A of FIG. 1 and is a view showing a constant-voltage electrode according to an embodiment of the present disclosure.

[0089] refer to Figure 4, the constant-voltage electrode CVE may include a first constant-voltage electrode CVE1 and a second constant-voltage electrode CVE2 .

[0090] The first constant voltage electrode CVE1 may be disposed to be spaced apart from the display area DA in the first direction DR1. The second constant voltage electrode CVE2 may be disposed to be spaced apart from the first constant voltage electrode CVE1 in the first direction DR1.

[0091] The connection electrode CNE may be in electrical contact with each of the first constant-voltage electrode CVE1 and the second constant-voltage electrode CVE2. That is, the connection electrode CNE may electrically connect the first constant-voltage electrode CVE1 and the second constant-voltage electrode CVE2 to each other.

[0092] The first constant-voltage electrode CVE1 may be electrically connected to a power supply voltage line PL provided in the display area DA. The second constant-voltage electrode CVE2 may be electrically connected to a constant-voltage power supply (not shown) provided in the peripheral area PA. Accordingly, the first constant-voltage electrode CVE1, the second constant-voltage electrode CVE2, the connection electrode CNE, and the power supply voltage line PL may transmit a constant-voltage power provided from the constant-voltage power supply to the display area DA. Figure 1A Pixel PX.

[0093] A transmission line TL extending in the first direction DR1 to cross the first constant voltage electrode CVE1 and the second constant voltage electrode CVE2 may be disposed in the peripheral area PA. The transmission line TL may be electrically connected to the first constant voltage electrode CVE1 and the second constant voltage electrode CVE2 disposed in the peripheral area PA. Figure 1A Integrated circuit chips IC and / or Figure 1A In addition, the transmission line TL can be electrically connected to the data line DL disposed in the display area DA. Accordingly, the transmission line TL can Figure 1A Integrated circuit chips IC and / or Figure 1A The electrical signal provided by the pad unit PD is transmitted to Figure 1A Pixel PX.

[0094] Constant voltage signal (for example, Figure 1B The first power supply voltage ELVDD) may be supplied to the first constant voltage electrode CVE1, the second constant voltage electrode CVE2, and the connection electrode CNE. Figure 1B The data voltage of the data line DLj) may be provided to the transmission line TL. The transmission line TL may be electrically insulated from the first constant voltage electrode CVE1, the second constant voltage electrode CVE2, and the connection electrode CNE. Figure 4As shown in , this may be designed so that the transmission line TL is disposed not to overlap with the connection electrode CNE in a plan view, and the conductive layer forming the transmission line TL and the conductive layer forming the constant voltage electrode CVE are disposed in different layers with at least one insulating layer interposed therebetween. Alternatively, this may be designed so that the conductive layer forming the transmission line TL and the conductive layer forming the connection electrode CNE, the first constant voltage electrode CVE1, and the second constant voltage electrode CVE2 are disposed in different layers with at least one insulating layer interposed therebetween, and in this case, this may be designed so that the transmission line TL and the connection electrode CNE are disposed to overlap each other in a plan view as required.

[0095] Figures 5 to 17 It is shown Figure 4 A diagram of a constant voltage electrode, and Figures 5 to 17 Shows the settings in Figure 4 Configuration of elements in region B. Figure 6 It is along Figure 5 A cross-sectional view taken along the line X1-X1' in FIG. Figure 7 It is along Figure 5 A cross-sectional view taken along the line Y1-Y1' in FIG. Fig. 9 It is along Figure 8 A cross-sectional view taken along the line X2-X2' in FIG. Fig. 10A and Fig. 10B yes Fig. 9 A magnified view of region Z1 in Fig.11A and Fig. 11B yes Fig. 9 A magnified view of region Z2 in Fig.13 It is along Fig.12 A cross-sectional view taken along line X3-X3' in FIG. Fig.15 It is along Fig.14 A cross-sectional view taken along line X4-X4' in FIG. Fig.17 It is along Fig.16 The cross-sectional view taken along the line X5-X5' in FIG. Figures 5 to 17 The configuration included in the constant voltage electrode is described. Here, Figure 5 , Figure 8 , Fig.12 , Fig.14 and Fig.16 In the embodiment, the inorganic insulating layer is omitted.

[0096] refer to Figures 5 to 7 , the 2-1st constant-voltage electrode CVE2-1 may be disposed to be spaced apart from the 1-1st constant-voltage electrode CVE1-1 in the first direction DR1. The 1-1st constant-voltage electrode CVE1-1 may be included in Figure 4 The first constant-voltage electrode CVE1 and the 2-1st constant-voltage electrode CVE2-1 may be included Figure 4The second constant voltage electrode CVE2.

[0097] The 1-1st constant-voltage electrode CVE1-1 and the 2-1st constant-voltage electrode CVE2-1 may be included in Figure 2 Here, “included in Figure 2 The pattern in the first SD conductive layer SD1 may refer to a 1-1th constant-voltage electrode CVE1-1, a 2-1th constant-voltage electrode CVE2-1, and Figure 2 The first SD conductive layers SD1 may include the same material and may be simultaneously patterned using one mask.

[0098] The first connection electrode CNE1 may be in electrical contact with each of the 1-1st constant-voltage electrode CVE1-1 and the 2-1st constant-voltage electrode CVE2-1. More specifically, the 1-1st constant-voltage electrode CVE1-1 may be in electrical contact with a first overlapping portion P1 of the first connection electrode CNE1 through a first through hole CNT1 formed in the sixth insulating layer IL6. The first overlapping portion P1 may be a portion of the first connection electrode CNE1 that overlaps with the 1-1st constant-voltage electrode CVE1-1. The 2-1st constant-voltage electrode CVE2-1 may be in electrical contact with a second overlapping portion P2 of the first connection electrode CNE1 through a second through hole CNT2 formed in the sixth insulating layer IL6. The second overlapping portion P2 may be a portion of the first connection electrode CNE1 that overlaps with the 2-1st constant-voltage electrode CVE2-1.

[0099] The first connection electrode CNE1 may be included in Figure 4 In addition, the first connection electrode CNE1 may be included in Figure 2 A pattern in the fourth conductive layer CL4.

[0100] The transmission line TL may extend in the first direction DR1. In a plan view, the transmission line TL may overlap the 1-1th constant-voltage electrode CVE1-1 and the 2-1th constant-voltage electrode CVE2-1.

[0101] The transmission line TL may be electrically insulated from each of the 1-1st constant-voltage electrode CVE1-1 and the 2-1st constant-voltage electrode CVE2-1. For example, the transmission line TL may be included in Figure 2 The pattern in the second conductive layer CL2 is formed, and thus the above-mentioned electrical insulation may be formed by the insulating layers IL3, IL4, IL5 and IL6 between the transmission line TL and the 1-1th constant-voltage electrode CVE1-1 and the 2-1th constant-voltage electrode CVE2-1.

[0102] The transmission line TL may be electrically insulated from the first connection electrode CNE1. For example, the transmission line TL may be included in Figure 2The pattern in the second conductive layer CL2 is formed, and thus the above-mentioned electrical insulation may be formed by the insulating layers IL3, IL4 and IL5 between the transmission line TL and the first link electrode CNE1.

[0103] at the same time, Figures 5 to 7 shows that the first connection electrode CNE1 is included in Figure 2 The pattern of the fourth conductive layer CL4 and the transmission line TL are included in Figure 2 The first connection electrode CNE1 and the transmission line TL may be formed of various conductive layers satisfying the above electrical insulation. For example, the first connection electrode CNE1 may be formed of Figure 2 As another example, the first connection electrode CNE1 and the transmission line TL may be formed by Figure 2 A third conductive layer CL3 is formed, and in a plan view, the first connection electrode CNE1 and the transmission line TL do not overlap.

[0104] In addition, the connection electrode CNE may be a double-layered structure including a first connection electrode CNE1 and a second connection electrode disposed in a layer different from that of the first connection electrode CNE1 and connected to the first connection electrode CNE1. Figure 21 to Figure 25 Describe this.

[0105] refer to Figure 8 and Fig. 9 , the 1-1 th cladding layer CLD1 - 1 and the 2-1 cladding layer CLD2 - 1 may be disposed on the 1-1 th constant-voltage electrode CVE1 - 1 and the 2-1 th constant-voltage electrode CVE2 - 1 .

[0106] like Fig. 10A As shown in , the 1-1st cladding layer CLD1-1 may cover at least the 1-1st side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1 facing the 2-1st constant-voltage electrode CVE2-1. Fig.11A As shown in FIG. 1 , the 2-1st cladding layer CLD2-1 may cover at least the 2-1st side surface portion S2-1 of the 2-1st constant-voltage electrode CVE2-1 facing the 1-1st constant-voltage electrode CVE1-1. The 1-1st cladding layer CLD1-1 and the 2-1st cladding layer CLD2-1 may be included in Figure 2 The pattern in the first through hole insulation layer VIA1.

[0107] In an embodiment, the 2-1st cladding layer CLD2-1 may completely cover the side surface portions of the 2-1st constant-voltage electrode CVE2-1 including the 2-1st side surface portion S2-1. In this case, the 2-1st cladding layer CLD2-1 may include an opening OP exposing at least a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1. Only one opening OP may be defined on the 2-1st constant-voltage electrode CVE2-1, or as Figure 8 As shown in FIG. 2 , a plurality of openings OP may be defined on the 2-1th constant-voltage electrode CVE2 - 1 .

[0108] refer to Fig. 10A , the 1-1st constant-voltage electrode CVE1-1 may have a stacked structure of a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3. The second metal layer ML2 may include a material having a relatively low resistance compared to the first metal layer ML1 and the third metal layer ML3. For example, the second metal layer ML2 may include aluminum, and the first metal layer ML1 and the third metal layer ML3 may include titanium. Here, the first to third metal layers ML1, ML2, and ML3 forming the 1-1st side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1 may be covered by the 1-1st cladding layer CLD1-1.

[0109] refer to Fig. 10B In another embodiment, the side surface of the second metal layer ML2' may be recessed from the side surface of the first metal layer ML1' and the side surface of the third metal layer ML3'. Fig. 10B The undercut structure shown in . This may be a structure formed due to the difference in etching rate of the material included in the second metal layer ML2' and the materials included in the first metal layer ML1' and the third metal layer ML3' in the formation process of the 1-1 constant-voltage electrode CVE1-1. In addition, in this case, the first to third metal layers ML1', ML2' and ML3' forming the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 may be covered by the 1-1 cladding layer CLD1-1.

[0110] refer to Fig.11A The 2-1st constant voltage electrode CVE2-1 may also have a stacked structure of a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3. Here, the first to third metal layers ML1, ML2, ML3 forming the 2-1st side surface portion S2-1 of the 2-1st constant voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1.

[0111] refer to Fig. 11BIn another embodiment, the side surface of the second metal layer ML2' may be recessed from the side surface of the first metal layer ML1' and the side surface of the third metal layer ML3'. Fig. 11B The undercut structure shown in . This may be a structure formed due to the difference in etching rate of the material included in the second metal layer ML2' and the etching rate of the material included in the first metal layer ML1' and the third metal layer ML3' in the formation process of the 2-1st constant-voltage electrode CVE2-1. In addition, in this case, the first to third metal layers ML1', ML2' and ML3' forming the 2-1st side surface portion S2-1' of the 2-1st constant-voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1.

[0112] refer to Fig.12 and Fig.13 , the 1-2nd constant voltage electrode CVE1-2 and the 2-2nd constant voltage electrode CVE2-2 may be disposed on the 1-1st cladding layer CLD1-1 and the 2-1st cladding layer CLD2-1. The 2-2nd constant voltage electrode CVE2-2 may be disposed to be spaced apart from the 2-1st constant voltage electrode CVE2-1 in the first direction DR1. The 1-2nd constant voltage electrode CVE1-2 may be included in Figure 4 The first constant-voltage electrode CVE1 and the 2-2nd constant-voltage electrode CVE2-2 may be included Figure 4 The 1-2nd constant-voltage electrode CVE1-2 and the 2-2nd constant-voltage electrode CVE2-2 may be included in Figure 2 The pattern in the second SD conductive layer SD2.

[0113] The 1-2nd constant-voltage electrode CVE1-2 may extend from the upper surface of the 1-1st cladding layer CLD1-1 in a direction opposite to the first direction DR1 and may directly contact at least a portion of the upper surface of the 1-1st constant-voltage electrode CVE1-1.

[0114] The 2-2nd constant-voltage electrode CVE2-2 may extend from the upper surface of the 2-1st cladding layer CLD2-1 in the first direction DR1 and may directly contact at least a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1.

[0115] In the embodiment, when the 2-1st cladding layer CLD2-1 completely covers each side surface portion of the 2-1st constant-voltage electrode CVE2-1 including the 2-1st side surface portion S2-1 and includes a portion exposing at least a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1, Fig. 9 When the opening OP is formed, the 2-2nd constant-voltage electrode CVE2-2 can directly contact the 2-1st constant-voltage electrode CVE2-1. Fig. 9The opening OP exposes the upper surface.

[0116] refer to Fig.14 and Fig.15 The first organic layer OIL1, the 1-2 cladding layer CLD1-2, and the 2-2 cladding layer CLD2-2 may be disposed on the 1-2 constant voltage electrode CVE1-2 and the 2-2 constant voltage electrode CVE2-2. The first organic layer OIL1, the 1-2 cladding layer CLD1-2, and the 2-2 cladding layer CLD2-2 may be included in Figure 2 The pattern in the second through hole insulation layer VIA2.

[0117] The first organic layer OIL1 may be disposed on the 1-2nd constant-voltage electrode CVE1-2 on the 1-1st constant-voltage electrode CVE1-1. According to an embodiment, at least a portion of the 1-2nd constant-voltage electrode CVE1-2 may be interposed between the first organic layer OIL1 and the 1-1st constant-voltage electrode CVE1-1.

[0118] The 1-2 cladding layer CLD1-2 may be disposed to be spaced apart from the first organic layer OIL1 in the first direction DR1. The 1-2 cladding layer CLD1-2 may cover a 1-2 lateral surface portion disposed on the 1-1 cladding layer CLD1-1 among lateral surface portions of the 1-2 constant-voltage electrode CVE1-2.

[0119] The 2-2nd cladding layer CLD2-2 may be disposed to be spaced apart from the 1-2nd cladding layer CLD1-2 in the first direction DR1. The 2-2nd cladding layer CLD2-2 may completely cover the 2-2nd constant-voltage electrode CVE2-2.

[0120] refer to Fig.16 and Fig.17 The organic cover layer OCL, the second organic layer OIL2 and the third organic layer OIL3 may be disposed on the first organic layer OIL1, the 1-2 cladding layer CLD1-2 and the 2-2 cladding layer CLD2-2. The organic cover layer OCL, the second organic layer OIL2 and the third organic layer OIL3 may be included in Figure 3 The pattern in the pixel definition layer PDL.

[0121] The second organic layer OIL2 may extend from an upper surface of the first organic layer OIL1 in the first direction DR1 and may be disposed on a portion of an upper surface of the 1-1th constant-voltage electrode CVE1-1. According to an embodiment, at least a portion of the 1-2nd constant-voltage electrode CVE1-2 may be interposed between the second organic layer OIL2 and the 1-1th constant-voltage electrode CVE1-1.

[0122] The first spacer pattern SPC1 may be disposed on the second organic layer OIL2. The first spacer pattern SPC1 may include an organic insulating material and / or an inorganic insulating material.

[0123] A portion of the first organic layer OIL1, the second organic layer OIL2, and the first spacer pattern SPC1 may form a reference Figure 1A The second dam structure DAM2 is described. The second dam structure DAM2 may be used to block the organic encapsulation layer EN2.

[0124] The organic cover layer OCL may be disposed to be spaced apart from the second organic layer OIL2 in the first direction DR1. The organic cover layer OCL may cover at least a portion of the 1-2 cladding layer CLD1-2. According to an embodiment, the organic cover layer OCL may completely cover the 1-2 cladding layer CLD1-2.

[0125] The first-first cladding layer CLD1-1, the first-second cladding layer CLD1-2 and the organic cover layer OCL may form a reference Figure 1A The first dam structure DAM1 is described. The first dam structure DAM1 may be provided to block the organic encapsulation layer EN2 that is not blocked by the second dam structure DAM2.

[0126] The third organic layer OIL3 may be disposed to be spaced apart from the organic cover layer OCL in the first direction DR1. The third organic layer OIL3 may completely cover the 2-2nd cladding layer CLD2-2.

[0127] The second spacer pattern SPC2 may be disposed on the third organic layer OIL3. The second spacer pattern SPC2 may include a material substantially the same as that of the first spacer pattern SPC1.

[0128] As described above, the organic encapsulation layer EN2 may be blocked by the second dam structure DAM2. In this case, the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 may contact each other on the upper surface of the second dam structure DAM2. In addition, in a state in which the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 contact each other, the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 may also be provided on the third organic layer OIL3 by extending in the first direction DR1 from the upper surface of the second dam structure DAM2.

[0129] Here, the first and second inorganic encapsulating layers EN1 and EN3 may contact each other in a region between the 1-1st constant voltage electrode CVE1-1 and the 2-1st constant voltage electrode CVE2-1. A CVD region CVD in which an organic insulating material is not interposed between the connection electrode CNE and the first inorganic encapsulating layer EN1 may be defined.

[0130] Reference again Fig. 10A and Fig.17 , the 1-1 side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1 may be covered by the 1-1st cladding layer CLD1-1. When the 1-2nd constant-voltage electrode CVE1-2 is formed, the 1-1st cladding layer CLD1-1 may protect the 1-1st side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1. Accordingly, when the 1-2nd constant-voltage electrode CVE1-2 is formed, the 1-1st side surface portion S1-1, which is relatively vulnerable to damage, may be substantially not damaged, and thus the reliability of the first constant-voltage electrode CVE1 including the 1-1st constant-voltage electrode CVE1-1 may be improved.

[0131] Reference again Fig. 10B and Fig.17 , even in the form of Fig. 10B In the case of the undercut structure shown in , the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 can also be covered by the 1-1 cladding layer CLD1-1. Here, since the above-mentioned undercut structure is covered by the 1-1 cladding layer CLD1-1, the reliability of other elements provided on the 1-1 cladding layer CLD1-1 covering the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 can be fully ensured. That is, problems such as disconnection of the above-mentioned other elements due to the above-mentioned undercut structure can be basically avoided.

[0132] Reference again Fig.11A and Fig.17 , the 2-1st side surface portion S2-1 and another side surface portion of the 2-1st constant-voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1. When the 2-2nd constant-voltage electrode CVE2-2 is formed, the 2-1st cladding layer CLD2-1 may be used to completely protect the side surface portion of the 2-1st constant-voltage electrode CVE2-1 including the 2-1st side surface portion S2-1. Accordingly, when the 2-2nd constant-voltage electrode CVE2-2 is formed, the side surface portion of the 2-1st constant-voltage electrode CVE2-1, which is relatively vulnerable to damage, may be substantially not damaged, and thus the reliability of the second constant-voltage electrode CVE2 including the 2-1st constant-voltage electrode CVE2-1 may be improved.

[0133] Reference again Fig. 11B and Fig.17 , even in the form of Fig. 11BIn the case of the undercut structure shown in , the 2-1 side surface portion S2-1' of the 2-1 constant-voltage electrode CVE2-1 can also be covered by the 2-1 cladding layer CLD2-1. Here, since the above-mentioned undercut structure is covered by the 2-1 cladding layer CLD2-1, the reliability of other elements provided on the 2-1 cladding layer CLD2-1 covering the 2-1 side surface portion S2-1' of the 2-1 constant-voltage electrode CVE2-1 can be fully ensured.

[0134] Reference again Fig.15 and Fig.17 , the 1-2 side surface portion disposed on the 1-1 cladding layer CLD1-1 among the side surface portions of the 1-2 constant-voltage electrode CVE1-2 can be covered by the 1-2 cladding layer CLD1-2. Accordingly, the reliability of other elements disposed on the 1-2 cladding layer CLD1-2 covering the 1-2 side surface portion of the 1-2 constant-voltage electrode CVE1-2 can be sufficiently ensured. For example, even if the 1-2 constant-voltage electrode CVE1-2 has a reference Fig. 10B The stacked structure of the first to third metal layers ML1', ML2' and ML3' described above and the 1-2 side surface portion has a reference Fig. 10B In the case of the described undercut structure, sufficient reliability can also be ensured.

[0135] Reference again Fig.15 and Fig.17 , the side surface portion of the 2-2 constant-voltage electrode CVE2-2 may be covered by the 2-2 cladding layer CLD2-2. Accordingly, the reliability of other elements provided on the 2-2 cladding layer CLD2-2 covering the side surface portion of the 2-2 constant-voltage electrode CVE2-2 can be sufficiently ensured. For example, even if the 2-2 constant-voltage electrode CVE2-2 has a reference Fig. 11B The stacked structure of the first to third metal layers ML1', ML2' and ML3' described above and the side surface portion of the 2-2 constant voltage electrode CVE2-2 has a reference Fig. 11B In the case of the described undercut structure, sufficient reliability can also be ensured.

[0136] Fig.18 and Fig.19 is a diagram showing a structure of a pixel according to another embodiment of the present disclosure.

[0137] refer to Fig.18The pixel PX may include a substrate SUB, a first conductive layer CL1, a first insulating layer IL1, a first active layer ATV1, a second insulating layer IL2, a second conductive layer CL2, a third insulating layer IL3, a third conductive layer CL3, a fourth insulating layer IL4, a second active layer ATV2, a fifth insulating layer IL5, a fourth conductive layer CL4, a sixth insulating layer IL6, a first SD conductive layer SD1, a passivation layer PVX, a first through-hole insulating layer VIA1, a second SD conductive layer SD2, a second through-hole insulating layer VIA2, a third SD conductive layer SD3 and a third through-hole insulating layer VIA3 stacked sequentially.

[0138] In the following, with reference Figure 2 Description of the contents that are repeated is omitted.

[0139] The third SD conductive layer SD3 may be a single layer or multiple layers and may be formed using known conductors such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (ND), copper (Cu), and platinum (Pt).

[0140] The passivation layer PVX may include an inorganic insulating material, such as silicon oxide, silicon nitride, or silicon oxynitride.

[0141] The third via hole insulating layer VIA3 may include an organic insulating material, such as epoxy resin, phenol resin, polyamide resin, polyimide resin, or the like.

[0142] refer to Fig.19 , set in Figure 1A The pixel PX in the display area DA may include a polysilicon semiconductor transistor TFT1, an oxide semiconductor transistor TFT2, and a light emitting element LD.

[0143] In the following, with reference Figure 3 Description of the contents that are repeated is omitted.

[0144] The pixel electrode PXE may be disposed on the third through-hole insulating layer VIA3. The pixel electrode PXE may be connected to a partial pattern of the third SD conductive layer SD3 electrically connected to the polysilicon semiconductor transistor TFT1 through a through-hole. In this case, the above-mentioned partial pattern of the third SD conductive layer SD3 may be connected to a partial pattern of the second SD conductive layer SD2 electrically connected to the polysilicon semiconductor transistor TFT1 through a through-hole.

[0145] Fig. 20 yes Figure 1A 1 is an enlarged view of a region A of FIG. 1 and is a view showing a constant-voltage electrode according to another embodiment of the present disclosure.

[0146] refer to Fig. 20 , the constant voltage electrode CVE may include a first constant voltage electrode CVE1 and a second constant voltage electrode CVE2. The first constant voltage electrode CVE1 and the second constant voltage electrode CVE2 may be electrically connected via a connection electrode CNE. The transmission line TL may be disposed in the peripheral area PA. Here, the configurations CVE1, CVE2, CNE, and TL and the electrical connection relationships between the configurations CVE1, CVE2, CNE, and TL and other elements (e.g., a power supply voltage line PL and a data line DL, etc.) may be the same as the reference numerals. Figure 4 The contents described are substantially the same (or similar). Therefore, repeated descriptions are omitted.

[0147] Figures 21 to 35 It is shown Fig. 20 A diagram of a constant voltage electrode, and Figures 21 to 35 Shows the settings in Fig. 20 Configuration of the elements in region B'. Fig. 22 It is along Fig.21 A cross-sectional view taken along line X6-X6' in FIG. Fig.23A and Fig. 23B yes Fig. 22 A magnified view of region Z3 in Fig.25 It is along Fig.24 A cross-sectional view taken along line X7-X7' in FIG. Fig. 27 It is along Fig.26 A cross-sectional view taken along line X8-X8' in FIG. Fig.28A and Fig.28B yes Fig. 27 A magnified view of region Z4 in Fig.29A and Fig.29B yes Fig. 27 A magnified view of region Z5 in Fig.31 It is along Fig.30 A cross-sectional view taken along line X9-X9' in FIG. Fig.33 It is along Fig.32 A cross-sectional view taken along line X10-X10' in FIG. Fig.35 It is along Fig.34 A cross-sectional view taken along the line X11-X11' in FIG. Figures 21 to 35 The configuration included in the constant voltage electrode is described. Here, Fig.21 , Fig.24 , Fig.26 , Fig.30 , Fig.32 and Fig.34 In the embodiment, the inorganic insulating layer is omitted.

[0148] refer to Fig.21 and Fig. 22, a 1-1th constant voltage electrode CVE1-1, a first connection electrode CNE1, a second connection electrode CNE2, a transmission line TL, and a first organic layer OIL1 may be provided.

[0149] The 1-1 constant voltage electrode CVE1-1 may be included Fig. 20 The 1-1st constant-voltage electrode CVE1-1 may be included in Fig.18 patterns in the first SD conductive layer SD1.

[0150] The first connection electrode CNE1 may be in electrical contact with the 1-1st constant-voltage electrode CVE1-1. More specifically, the 1-1st constant-voltage electrode CVE1-1 may be in electrical contact with the first overlapping portion P1 of the first connection electrode CNE1 through the first through hole CNT1 formed in the sixth insulating layer IL6. The first overlapping portion P1 may be a portion of the first connection electrode CNE1 that overlaps with the 1-1st constant-voltage electrode CVE1-1. The first connection electrode CNE1 may be included in Fig.18 A pattern in the fourth conductive layer CL4.

[0151] The second connection electrode CNE2 may be in electrical contact with the 1-1st constant-voltage electrode CVE1-1. More specifically, the 1-1st constant-voltage electrode CVE1-1 may be in electrical contact with a third overlapping portion P3 of the second connection electrode CNE2 through a third through hole CNT3 formed in the insulating layers IL4, IL5, and IL6. The third overlapping portion P3 may be a portion of the second connection electrode CNE2 that overlaps with the 1-1st constant-voltage electrode CVE1-1 and does not overlap with the first connection electrode CNE1. The second connection electrode CNE2 may be a Fig.18 The pattern in the third conductive layer CL3.

[0152] The first connection electrode CNE1 and the second connection electrode CNE2 may constitute Fig. 20 As described above, the connection electrode CNE may include two or more conductive layers disposed in different layers. In this case, the resistance of the connection electrode CNE may be relatively low, and thus driving efficiency may be improved.

[0153] The transmission line TL may extend in the first direction DR1. In a plan view, the transmission line TL may be connected to the 1-1st constant voltage electrode CVE1-1 and the 1-2nd constant voltage electrode CVE1-1 described later. Fig.24 In this case, the transmission line TL may overlap with the 1-1 constant voltage electrode CVE1-1 and the 2-1 constant voltage electrode CVE2-1. Fig.24 Each of the 2-1st constant voltage electrodes CVE2-1 is electrically insulated. In addition, the transmission line TL may be electrically insulated from the connection electrodes CNE1 and CNE2. Fig.21, the transmission line TL is shown to be included in Fig.18 The transmission line TL may be formed of various conductive layers satisfying the above-mentioned electrical insulation.

[0154] The first-first cladding layer CLD1-1 may cover the first-first constant-voltage electrode CVE1-1 facing the second-first constant-voltage electrode CVE2-1 (see Fig.24 ) of the 1-1 side surface portion S1-1 (see Fig.23A ). The 1-1 cladding layer CLD1-1 may be included Fig.18 Patterning of the passivation layer PVX.

[0155] The first organic layer OIL1 may be disposed on the 1-1 cladding layer CLD1-1. The first organic layer OIL1 may be included in Fig.18 The pattern in the first through hole insulation layer VIA1.

[0156] refer to Fig.23A , the 1-1st constant-voltage electrode CVE1-1 may have a stacked structure of a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3. The second metal layer ML2 may include a material having a relatively low resistance compared to the first metal layer ML1 and the third metal layer ML3. For example, the second metal layer ML2 may include aluminum, and the first metal layer ML1 and the third metal layer ML3 may include titanium. Here, the first to third metal layers ML1, ML2, and ML3 forming the 1-1st side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1 may be covered by the 1-1st cladding layer CLD1-1.

[0157] refer to Fig. 23B In another embodiment, the side surface of the second metal layer ML2' may be recessed from the side surface of the first metal layer ML1' and the side surface of the third metal layer ML3'. Fig. 23B The undercut structure shown in . This may be a structure formed due to the difference in etching rate of the material included in the second metal layer ML2' and the materials included in the first metal layer ML1' and the third metal layer ML3' in the formation process of the 1-1 constant-voltage electrode CVE1-1. In addition, in this case, the first to third metal layers ML1', ML2' and ML3' forming the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 may be covered by the 1-1 cladding layer CLD1-1.

[0158] refer to Fig.24 and Fig.25, the 1-2nd constant-voltage electrode CVE1-2 and the 2-1st constant-voltage electrode CVE2-1 may be disposed on the passivation layer PVX. The 2-1st constant-voltage electrode CVE2-1 may be disposed to be spaced apart from the 1-2nd constant-voltage electrode CVE1-2 in the first direction DR1. The 1-2nd constant-voltage electrode CVE1-2 may be included in Fig. 20 The first constant-voltage electrode CVE1 and the 2-1st constant-voltage electrode CVE2-1 may be included Fig. 20 The 1-2nd constant-voltage electrode CVE1-2 and the 2-1st constant-voltage electrode CVE2-1 may be included in Fig.18 The pattern in the second SD conductive layer SD2.

[0159] The 1-2nd constant-voltage electrode CVE1-2 may extend from the upper surface of the 1-1st cladding layer CLD1-1 in a direction opposite to the first direction DR1 and may directly contact at least a portion of the upper surface of the 1-1st constant-voltage electrode CVE1-1.

[0160] The 2-1st constant voltage electrode CVE2-1 may extend from the upper surface of the first organic layer OIL1 in a direction opposite to the first direction DR1 and may be disposed on the 1-1st cladding layer CLD1-1.

[0161] The 2-1st constant-voltage electrode CVE2-1 may be in electrical contact with each of the first connection electrode CNE1 and the second connection electrode CNE2. More specifically, the 2-1st constant-voltage electrode CVE2-1 may be in electrical contact with the second overlapping portion P2 of the first connection electrode CNE1 through the second through hole CNT2 formed in the sixth insulating layer IL6 and the passivation layer PVX. The second overlapping portion P2 may be a portion of the first connection electrode CNE1 that overlaps with the 2-1st constant-voltage electrode CVE2-1. In addition, the 2-1st constant-voltage electrode CVE2-1 may be in electrical contact with the fourth overlapping portion P4 of the second connection electrode CNE2 through the fourth through hole CNT4 formed in the insulating layers IL4, IL5, and IL6 and the passivation layer PVX. The fourth overlapping portion P4 may be a portion of the second connection electrode CNE2 that overlaps with the 2-1st constant-voltage electrode CVE2-1 and does not overlap with the first connection electrode CNE1.

[0162] refer to Fig.26 and Fig. 27 , the 1-2 cladding layer CLD1 - 2 and the 2-1 cladding layer CLD2 - 1 may be disposed on the 1-2 cladding layer CVE1 - 2 and the 2-1 constant voltage electrode CVE2 - 1 .

[0163] The 1-2 cladding layer CLD1-2 may cover at least the 1-2 side surface portion S1-2 of the 1-2 constant-voltage electrode CVE1-2 facing the 2-1 constant-voltage electrode CVE2-1 (see Fig.28A The 2-1st cladding layer CLD2-1 may cover at least the 2-1st side surface portion S2-1 of the 2-1st constant-voltage electrode CVE2-1 facing the 1-2nd constant-voltage electrode CVE1-2 (see Fig.29A ). The 1-2 cladding layer CLD1-2 and the 2-1 cladding layer CLD2-1 may be included in Fig.18 The pattern in the second through hole insulation layer VIA2.

[0164] In an embodiment, the 2-1st cladding layer CLD2-1 may include an opening OP exposing at least a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1. Fig.26 As shown in , only one opening OP may be defined on the 2-1st constant-voltage electrode CVE2-1, or a plurality of openings OP may be defined on the 2-1st constant-voltage electrode CVE2-1.

[0165] refer to Fig.28A , the 1-2nd constant-voltage electrode CVE1-2 may have a stacked structure of a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3. The second metal layer ML2 may include a material having a relatively low resistance compared to the first metal layer ML1 and the third metal layer ML3. For example, the second metal layer ML2 may include aluminum, and the first metal layer ML1 and the third metal layer ML3 may include titanium. Here, the first to third metal layers ML1, ML2, and ML3 forming the 1-2nd side surface portion S1-2 of the 1-2nd constant-voltage electrode CVE1-2 may be covered by the 1-2nd cladding layer CLD1-2.

[0166] refer to Fig.28B In another embodiment, the side surface of the second metal layer ML2' may be recessed from the side surface of the first metal layer ML1' and the side surface of the third metal layer ML3'. Fig.28B The undercut structure shown in . This may be a structure formed due to the difference in etching rate of the material included in the second metal layer ML2' and the materials included in the first metal layer ML1' and the third metal layer ML3' in the formation process of the 1-2 constant-voltage electrode CVE1-2. In addition, in this case, the first to third metal layers ML1', ML2' and ML3' forming the 1-2 side surface portion S1-2' of the 1-2 constant-voltage electrode CVE1-2 may be covered by the 1-2 cladding layer CLD1-1.

[0167] refer to Fig.29AThe 2-1st constant voltage electrode CVE2-1 may also have a stacked structure of a first metal layer ML1, a second metal layer ML2, and a third metal layer ML3. Here, the first to third metal layers ML1, ML2, ML3 forming the 2-1st side surface portion S2-1 of the 2-1st constant voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1.

[0168] refer to Fig.29B In another embodiment, the side surface of the second metal layer ML2' may be recessed from the side surface of the first metal layer ML1' and the side surface of the third metal layer ML3'. Fig.29B The undercut structure shown in . This may be a structure formed due to the difference in etching rate of the material included in the second metal layer ML2' and the etching rate of the material included in the first metal layer ML1' and the third metal layer ML3' in the formation process of the 2-1st constant-voltage electrode CVE2-1. In addition, in this case, the first to third metal layers ML1', ML2' and ML3' forming the 2-1st side surface portion S2-1' of the 2-1st constant-voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1.

[0169] refer to Fig.30 and Fig.31 , the 1-3rd constant voltage electrode CVE1-3 and the 2-2nd constant voltage electrode CVE2-2 may be disposed on the second through hole insulating layer VIA2. The 2-2nd constant voltage electrode CVE2-2 may be disposed to be spaced apart from the 1-3rd constant voltage electrode CVE1-3 in the first direction DR1. The 1-3rd constant voltage electrode CVE1-3 may be included in Fig. 20 The first constant-voltage electrode CVE1 and the 2-2nd constant-voltage electrode CVE2-2 may be included Fig. 20 The 1-3rd constant-voltage electrode CVE1-3 and the 2-2nd constant-voltage electrode CVE2-2 may be included in Fig.18 The pattern in the third SD conductive layer SD3.

[0170] The 1-3rd constant-voltage electrode CVE1-3 may extend from the upper surface of the 1-2nd cladding layer CLD1-2 in a direction opposite to the first direction DR1 and may directly contact at least a portion of the upper surface of the 1-2nd constant-voltage electrode CVE1-2.

[0171] The 2-2nd constant-voltage electrode CVE2-2 may extend from the upper surface of the 2-1st cladding layer CLD2-1 in the first direction DR1 and may directly contact at least a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1.

[0172] In the embodiment, when the 2-1st cladding layer CLD2-1 includes a portion of the upper surface of the 2-1st constant-voltage electrode CVE2-1 exposed, Fig. 27 When the opening OP is formed, the 2-2nd constant-voltage electrode CVE2-2 can directly contact the 2-1st constant-voltage electrode CVE2-1. Fig. 27 The opening OP exposes the upper surface.

[0173] refer to Fig.32 and Fig.33 The second organic layer OIL2 and the third organic layer OIL3 may be disposed on the third SD conductive layer SD3. The second organic layer OIL2 and the third organic layer OIL3 may be included in Fig.18 A pattern in the third through hole insulation layer VIA3.

[0174] The second organic layer OIL2 may be disposed on the 1-1th constant-voltage electrode CVE1-1. According to an embodiment, at least a portion of the 1-2nd constant-voltage electrode CVE1-2 and / or at least a portion of the 1-3rd constant-voltage electrode CVE1-3 may be interposed between the second organic layer OIL2 and the 1-1th constant-voltage electrode CVE1-1.

[0175] The third organic layer OIL3 may be disposed on the 2-2nd constant voltage electrode CVE2-2.

[0176] refer to Fig.34 and Fig.35 The organic cover layer OCL, the fourth organic layer OIL4 and the fifth organic layer OIL5 may be disposed on the third SD conductive layer SD3. The organic cover layer OCL, the fourth organic layer OIL4 and the fifth organic layer OIL5 may be included in Fig.19 The pattern in the pixel definition layer PDL.

[0177] The fourth organic layer OIL4 may cover at least a portion of the second organic layer OIL2. A portion of the second organic layer OIL2 and the fourth organic layer OIL4 may form a reference Figure 1A The second dam structure DAM2 is described. The second dam structure DAM2 may be used to block the organic encapsulation layer EN2.

[0178] The organic cover layer OCL may be disposed to be spaced apart from the fourth organic layer OIL4 in the first direction DR1. The organic cover layer OCL may cover at least a portion of the 1-2 cladding layer CLD1-2. According to an embodiment, the organic cover layer OCL may completely cover the 1-2 cladding layer CLD1-2.

[0179] The spacer pattern SPC may be disposed on the organic cover layer OCL. The spacer pattern SPC may include an organic insulating material and / or an inorganic insulating material.

[0180] The 1st-2nd cladding layer CLD1-2, the organic cover layer OCL and the spacer pattern SPC may form a reference Figure 1A The first dam structure DAM1 is described. The first dam structure DAM1 may be provided to block the organic encapsulation layer EN2 that is not blocked by the second dam structure DAM2.

[0181] The fifth organic layer OIL5 may be disposed to be spaced apart from the organic cover layer OCL in the first direction DR1. The fifth organic layer OIL5 may completely cover the 2-1st cladding layer CLD2-1, the 2-2nd constant voltage electrode CVE2-2, and the third organic layer OIL3.

[0182] As described above, the organic encapsulation layer EN2 may be blocked by the second dam structure DAM2. In this case, the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 may contact each other on the upper surface of the second dam structure DAM2. In addition, in a state in which the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 contact each other, the first inorganic encapsulation layer EN1 and the second inorganic encapsulation layer EN3 may also be provided on the fifth organic layer OIL5 by extending in the first direction DR1 from the upper surface of the second dam structure DAM2.

[0183] Here, the first and second inorganic encapsulating layers EN1 and EN3 may contact each other in a region between the 1-2nd constant voltage electrode CVE1-2 and the 2-1st constant voltage electrode CVE2-1. A CVD region CVD in which an organic insulating material is not interposed between the connection electrode CNE and the first inorganic encapsulating layer EN1 may be defined.

[0184] Reference again Fig.23A and Fig.35 , the 1-1 side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1 may be covered by the 1-1st cladding layer CLD1-1. When the 1-2nd constant-voltage electrode CVE1-2 is formed, the 1-1st cladding layer CLD1-1 may protect the 1-1st side surface portion S1-1 of the 1-1st constant-voltage electrode CVE1-1. Accordingly, when the 1-2nd constant-voltage electrode CVE1-2 is formed, the 1-1st side surface portion S1-1, which is relatively vulnerable to damage, may be substantially not damaged, and thus the reliability of the first constant-voltage electrode CVE1 including the 1-1st constant-voltage electrode CVE1-1 may be improved.

[0185] Reference again Fig. 23B and Fig.35 , even in the form of Fig. 23BIn the case of the undercut structure shown in , the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 can also be covered by the 1-1 cladding layer CLD1-1. Here, since the above-mentioned undercut structure is covered by the 1-1 cladding layer CLD1-1, the reliability of other elements provided on the 1-1 cladding layer CLD1-1 covering the 1-1 side surface portion S1-1' of the 1-1 constant-voltage electrode CVE1-1 can be fully ensured. That is, problems such as disconnection of the above-mentioned other elements due to the above-mentioned undercut structure can be basically avoided.

[0186] Reference again Fig.28A and Fig.35 , the 1-2 side surface portion S1-2 of the 1-2nd constant-voltage electrode CVE1-2 may be covered by the 1-2nd cladding layer CLD1-2. During the formation process of the 1-3rd constant-voltage electrode CVE1-3, the 1-2nd cladding layer CLD1-2 may be used to protect the 1-2 side surface portion S1-2 of the 1-2nd constant-voltage electrode CVE1-2. Accordingly, during the formation process of the 1-3rd constant-voltage electrode CVE1-3, the 1-2nd side surface portion S1-2, which is relatively vulnerable to damage, may be substantially not damaged, and thus the reliability of the first constant-voltage electrode CVE1 including the 1-2nd constant-voltage electrode CVE1-2 may be improved.

[0187] Reference again Fig.28B and Fig.35 , even in the form of Fig.28B In the case of the undercut structure shown in , the 1-2 side surface portion S1-2' of the 1-2 constant-voltage electrode CVE1-2 may also be covered by the 1-2 cladding layer CLD1-2. Here, since the above-mentioned undercut structure is covered by the 1-2 cladding layer CLD1-2, the reliability of other elements provided on the 1-2 cladding layer CLD1-2 covering the 1-2 side surface portion S1-2' of the 1-2 constant-voltage electrode CVE1-2 can be fully ensured.

[0188] Reference again Fig.29A and Fig.35 , the 2-1st side surface portion S2-1 of the 2-1st constant-voltage electrode CVE2-1 may be covered by the 2-1st cladding layer CLD2-1. When the 2-2nd constant-voltage electrode CVE2-2 is formed, the 2-1st cladding layer CLD2-1 may be used to protect the 2-1st side surface portion S2-1 of the 2-1st constant-voltage electrode CVE2-1. Accordingly, when the 2-2nd constant-voltage electrode CVE2-2 is formed, the 2-1st side surface portion S2-1 of the relatively vulnerable 2-1st constant-voltage electrode CVE2-1 may be substantially not damaged, and thus the reliability of the second constant-voltage electrode CVE2 including the 2-1st constant-voltage electrode CVE2-1 may be improved.

[0189] Reference again Fig.29B and Fig.35 , even in the form of Fig.29B In the case of the undercut structure shown in , the 2-1 side surface portion S2-1' of the 2-1 constant-voltage electrode CVE2-1 can also be covered by the 2-1 cladding layer CLD2-1. Here, since the above-mentioned undercut structure is covered by the 2-1 cladding layer CLD2-1, the reliability of other elements provided on the 2-1 cladding layer CLD2-1 covering the 2-1 side surface portion S2-1' of the 2-1 constant-voltage electrode CVE2-1 can be fully ensured.

[0190] refer to Fig.35 , the 1-3 side surface portion disposed on the 1-2 cladding layer CLD1-2 among the side surface portions of the 1-3 constant-voltage electrode CVE1-3 may be covered by the organic cover layer OCL. Accordingly, the reliability of other elements disposed on the organic cover layer OCL covering the 1-3 side surface portion of the 1-3 constant-voltage electrode CVE1-3 may be sufficiently ensured. For example, even if the 1-3 constant-voltage electrode CVE1-3 has a reference Fig. 23B or Fig.28B The stacked structure of the first to third metal layers ML1', ML2' and ML3' described above and the first to third side surface portions have reference Fig. 23B or Fig.28B In the case of the described undercut structure, sufficient reliability can also be ensured.

[0191] Reference again Fig.35 , the side surface portion of the 2-2 constant-voltage electrode CVE2-2 may be covered by the fifth organic layer OIL5. Accordingly, the reliability of other elements provided on the fifth organic layer OIL5 covering the side surface portion of the 2-2 constant-voltage electrode CVE2-2 can be sufficiently ensured. For example, even if the 2-2 constant-voltage electrode CVE2-2 has a reference Fig.29B The stacked structure of the first to third metal layers ML1', ML2' and ML3' described above and the side surface portion of the 2-2 constant voltage electrode CVE2-2 has a reference Fig.29B In the case of the described undercut structure, sufficient reliability can also be ensured.

[0192] Although the present disclosure has been described with reference to the above-described embodiments, it will be understood by those skilled in the art that the present disclosure may be variously modified and changed without departing from the spirit and scope of the present disclosure as set forth in the claims.

Claims

1. A display device, comprising: A plurality of pixels are arranged in a display area; A 1-1 constant voltage electrode is arranged in the peripheral area; a 2-1st constant-voltage electrode, disposed in the peripheral region to be spaced apart from the 1-1st constant-voltage electrode; a connecting electrode electrically connecting the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode and being arranged in a different layer from the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode in a cross-sectional view; a 1-1 covering layer, covering at least a 1-1 side surface portion of the 1-1 constant-voltage electrode facing the 2-1 constant-voltage electrode; as well as The 1-2 constant-voltage electrode is provided on the upper surface of the 1-1 cladding layer and directly contacts at least a portion of the upper surface of the 1-1 constant-voltage electrode.

2. The display device according to claim 1, further comprising: The 1-2 covering layer covers at least the 1-2 side surface portion of the 1-2 constant-voltage electrode provided on the 1-1 covering layer.

3. The display device according to claim 2, further comprising: An organic covering layer completely covers the first and second covering layers, The 1-1 cladding layer, the 1-2 cladding layer and the organic cover layer form a first dam structure, and in a plan view, the first dam structure surrounds the display area.

4. The display device according to claim 3, further comprising: The second dam structure is arranged on the 1-2 constant voltage electrode in the cross-sectional view, Wherein, in the plan view, the second dam structure is disposed between the display area and the first dam structure to surround the display area.

5. The display device according to any one of claims 1 to 4, further comprising: a 2-1 covering layer, covering at least a 2-1 side surface portion of the 2-1 constant-voltage electrode facing the 1-1 constant-voltage electrode; as well as The 2-2 constant-voltage electrode is provided on the upper surface of the 2-1 cladding layer and directly contacts at least a portion of the upper surface of the 2-1 constant-voltage electrode.

6. The display device according to claim 5, wherein: The 2-1st coating layer completely covers each side surface portion of the 2-1st constant-voltage electrode including the 2-1st side surface portion, wherein the 2-1st coating layer includes an opening exposing at least a portion of the upper surface of the 2-1st constant-voltage electrode, and The 2-2nd constant-voltage electrode directly contacts the upper surface of the 2-1st constant-voltage electrode exposed by the opening.

7. The display device according to claim 6, wherein: The opening is provided in plural.

8. The display device according to claim 1, further comprising: an encapsulation layer, completely covering the plurality of pixels arranged in the display area, The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer between the first inorganic encapsulation layer and the second inorganic encapsulation layer, and Wherein, in a plan view, the first inorganic encapsulation layer and the second inorganic encapsulation layer are in direct contact with each other in a region between the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode.

9. The display device according to claim 8, wherein: An organic insulating material is disposed in a CVD region in which the organic insulating material is not interposed between the connection electrode and the first inorganic encapsulation layer, in a region overlapping the connection electrode.

10. A display device, comprising: A plurality of pixels are arranged in a display area; A 1-1 constant voltage electrode is arranged in the peripheral area; a 2-1st constant-voltage electrode, disposed in the peripheral region to be spaced apart from the 1-1st constant-voltage electrode; a connecting electrode electrically connecting the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode and being arranged in a different layer from the 1-1 constant-voltage electrode and the 2-1 constant-voltage electrode in a cross-sectional view; a 1-1 covering layer, covering at least a 1-1 side surface portion of the 1-1 constant-voltage electrode facing the 2-1 constant-voltage electrode; A 1-2 constant-voltage electrode, disposed on the upper surface of the 1-1 cladding layer and directly contacting at least a portion of the upper surface of the 1-1 constant-voltage electrode; a 1-2 covering layer, covering at least a 1-2 side surface portion of the 1-2 constant-voltage electrode disposed on the 1-1 covering layer; as well as The 1-3 constant-voltage electrode is disposed on the upper surface of the 1-2 cladding layer and directly contacts at least a portion of the upper surface of the 1-2 constant-voltage electrode.

Images