Thin film and preparation method thereof, photoelectric device and preparation method thereof, and display device

Abstract

The embodiment of the invention provides a thin film and a preparation method thereof, a photoelectric device and a preparation method thereof, and a display device. The preparation method of the thin film comprises the steps that a substrate and a film forming cover plate are provided, the film forming cover plate comprises a plate body, the film forming cover plate is arranged on the substrate, and a distance is formed between the plate body and the substrate; applying a functional solution between the plate body and the substrate to form a functional liquid film; and drying the functional liquid film to obtain the film. According to the preparation method, the waste rate of the raw materials is extremely low, so that the preparation cost of the thin film is relatively low, the thickness uniformity of the thin film can be improved, when the preparation method of the thin film is adopted to prepare a functional layer in a photoelectric device, the production cost of the photoelectric device can be remarkably reduced, and meanwhile, the electrical property of the photoelectric device can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and particularly to a thin film and a preparation method thereof, an optoelectronic device and a preparation method thereof, and a display device. Background Art

[0002] Electroluminescent devices include OLED (Organic Light-Emitting Diode) and QLED (Quantum Dot Light Emitting Diodes). QLED has advantages such as high color saturation, wet-processability, and high stability, which has attracted more and more attention in the research of QLED. OLED has been widely used in the fields of display, lighting, and smart wear due to its good self-luminous characteristics, high contrast, fast response, and flexible display.

[0003] The functional layers in existing electroluminescent devices are generally prepared by solution methods. However, in the process of solution methods, most of the functional materials are wasted, resulting in a high production cost of electroluminescent devices, and the uniformity of the thin films prepared by solution methods is poor. Summary of the Invention

[0004] Based on this, embodiments of the present application provide a thin film and a preparation method thereof, an optoelectronic device and a preparation method thereof, and a display device.

[0005] In a first aspect, embodiments of the present application provide a method for preparing a thin film, including:

[0006] Providing a substrate and a film-forming cover plate, the film-forming cover plate includes a plate body, disposing the film-forming cover plate on the substrate so that a spacing is formed between the plate body and the substrate;

[0007] Applying a functional solution between the plate body and the substrate to form a functional liquid film;

[0008] Performing a drying treatment on the functional liquid film to obtain the thin film.

[0009] In some embodiments, the film-forming cover plate further includes a plurality of supporting parts connected to the plate body, and applying the functional solution between the plate body and the substrate to form a functional liquid film includes:

[0010] Disposing the film-forming cover plate on the substrate so that the supporting parts of the film-forming cover plate contact the substrate;

[0011] Applying the functional solution so that the functional solution fills the accommodation space between the plate body and the substrate to form the functional liquid film; and / or

[0012] Performing a drying treatment on the functional liquid film to obtain the thin film includes:

[0013] Removing the film-forming cover plate, leaving the functional liquid film on the substrate, and performing a drying treatment on the functional liquid film to obtain the thin film.

[0014] In some embodiments, the material of the film-forming cover plate is glass or resin; and / or

[0015] The thickness of the plate body is 5 μm - 15 μm; and / or

[0016] The area of the plate body is 100 mm 2 - 300 mm 2 ; and / or

[0017] The distance between the plate body and the substrate is 100 nm to 100 μm.

[0018] In some embodiments, performing the drying treatment on the functional liquid film includes: placing the functional liquid film in a vacuum for drying treatment, the degree of vacuum of the drying treatment is less than 100 Pa, and the time of the drying treatment is 5 minutes to 30 minutes;

[0019] After obtaining the thin film, the method for preparing the thin film further includes: performing an annealing treatment on the thin film, the annealing temperature is 80 °C to 120 °C, and the annealing time is 5 minutes to 10 minutes.

[0020] In some embodiments, the functional solution includes a first solvent and a functional material dispersed in the first solvent, and the concentration of the functional material in the functional solution is 10 mg / mL to 70 mg / mL; and / or

[0021] The surface tension of the functional solution is 20 mN / m to 50 mN / m.

[0022] In some embodiments, the functional material includes at least one of a hole injection material, a hole transport material, a light-emitting material, and an electron transport material; and / or

[0023] The first solvent includes at least one of an alkane solvent and an alkene solvent, the alkane solvent is an alkane with 8 to 16 carbon atoms, and the alkene solvent is an alkene with 12 to 16 carbon atoms; and / or

[0024] The alkane solvent includes at least one of dodecane, n-hexadecane, and cyclohexylcyclohexane, and the alkene solvent includes at least one of dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, and 1-hexadecene.

[0025] In a second aspect, an embodiment of the present application provides a thin film prepared by using the method for preparing a thin film as described above.

[0026] In a third aspect, an embodiment of the present application provides a method for preparing an optoelectronic device, comprising:

[0027] providing a substrate, the substrate comprising a first electrode;

[0028] preparing a functional layer on the substrate, the functional layer comprising a functional sub-film layer, the functional sub-film layer being prepared by using the method for preparing a thin film as described above;

[0029] forming a second electrode on the functional layer to obtain an optoelectronic device.

[0030] In some embodiments, the functional layer comprises a light-emitting layer, and preparing the light-emitting layer on the substrate comprises: forming a light-emitting layer on the substrate by using the method for preparing a thin film as claimed in claim 4; wherein, the functional material comprises a light-emitting material, and the first solvent comprises at least one of an alkane solvent and an alkene solvent.

[0031] In some embodiments, the luminescent material includes at least one of an organic luminescent material and a quantum dot luminescent material, and the organic luminescent material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, 1,4,7,10-tetra-tert-butyldinaphthacene, a rubrene derivative, a thermally activated delayed fluorescence material, an exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes at least one of a single-structure quantum dot and a core-shell structure quantum dot. The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dot includes one or more layers. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS; 2 , CuInSe 2 , and AgInS 2 ; and / or

[0032] The alkane solvent is an alkane with 8 to 16 carbon atoms; and / or

[0033] The alkene solvent is an alkene with 12 to 16 carbon atoms.

[0034] In a fourth aspect, an optoelectronic device provided by an embodiment of the present application is obtained by using the preparation method of the optoelectronic device described above. The optoelectronic device includes a first electrode and a second electrode disposed opposite to each other, and a functional layer disposed between the first electrode and the second electrode. The functional layer includes a functional sub-film layer.

[0035] In some embodiments, the functional layer includes at least one of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer;

[0036] When the first electrode is an anode and the second electrode is a cathode, a hole injection layer and a hole transport layer are disposed in a stacked manner between the first electrode and the light-emitting layer. Among them, the hole injection layer is disposed close to the first electrode, the hole transport layer is disposed close to the light-emitting layer, and an electron transport layer is disposed between the second electrode and the light-emitting layer; or

[0037] When the first electrode is a cathode and the second electrode is an anode, an electron transport layer is disposed between the first electrode and the light-emitting layer, and a hole injection layer and a hole transport layer are disposed in a stacked manner between the second electrode and the light-emitting layer. Among them, the hole injection layer is disposed close to the second electrode, and the hole transport layer is disposed close to the light-emitting layer.

[0038] In some embodiments, the material of the hole transport layer includes at least one of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polysfluorene and its derivatives, polythiophene and its derivatives; and / or

[0039] The material of the hole injection layer includes at least one of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, poly(dioxyethylthiophene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal chalcogenides; and / or

[0040] The material of the light-emitting layer includes at least one of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, 1,4,7,10-tetra-tert-butyl naphthacene, a rubrene derivative, a thermally activated delayed fluorescence material, an exciplex light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives;The quantum dot light-emitting material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS; 2 , CuInSe 2 , and AgInS 2 ; and / or

[0041] The material of the electron transport layer includes at least one of metal oxides, doped metal oxides, II-VI group semiconductor materials, III-V group semiconductor materials, and I-III-VI group semiconductor materials. The metal oxides are selected from ZnO, BaO, TiO 2, SnO 2 at least one of; the metal oxides in the doped metal oxide are selected from ZnO, TiO 2 , SnO 2 at least one of; the doping elements are selected from at least one of Al, Mg, Li, In, Ga, the Group II-VI semiconductor family materials are selected from at least one of ZnS, ZnSe, CdS; the Group III-V semiconductor family materials are selected from at least one of InP, GaP; the Group I-III-VI semiconductor materials are selected from at least one of CuInS, CuGaS; and / or

[0042] The first electrode and the second electrode are each independently selected from doped metal oxide particle electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, metal elemental electrodes or alloy electrodes. The materials of the doped metal oxide particle electrodes include one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrodes include AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 , TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS or ZnS / Al / ZnS. The materials of the metal elemental electrodes include one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg and Ba.

[0043] In some embodiments, the thickness of the hole transport layer is 10 nm - 100 nm, the thickness of the hole injection layer is 20 nm - 120 nm, the thickness of the light-emitting layer is 10 nm - 60 nm, the thickness of the electron transport layer is 15 nm - 60 nm, the thickness of the anode is 10 nm - 100 nm, and the thickness of the cathode is 15 nm - 100 nm.

[0044] In a fifth aspect, an embodiment of the present application provides a display device, including the optoelectronic device as described above or an optoelectronic device prepared by the method for preparing the optoelectronic device as described above.

[0045] In the method for preparing a thin film provided by an embodiment of the present application, most of the functional solution used can be converted into a thin film. The preparation method has a very low waste rate of raw materials, so that the preparation cost of the thin film can be relatively low. Moreover, the thickness uniformity of the thin film prepared by this method is relatively good. When the above method for preparing a thin film is used to prepare a functional layer in an optoelectronic device, the production cost of the optoelectronic device can be significantly reduced. At the same time, due to the relatively good thickness uniformity of the functional layer, the electrical performance of the optoelectronic device can be improved. Description of the Drawings

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for description in the embodiments.

[0047] Figure 1 Schematic diagram of a thin film prepared by a spin coating method in the related art.

[0048] Figure 2 Flowchart of the method for preparing a thin film provided by an embodiment of the present application.

[0049] Figure 3 Schematic diagram of the three-dimensional structure of the film-forming cover plate provided by an embodiment of the present application.

[0050] Figure 4 Bottom view of the film-forming cover plate provided by an embodiment of the present application.

[0051] Figure 5 Side view of the film-forming cover plate provided by an embodiment of the present application.

[0052] Figure 6 Schematic diagram of the functional solution entering and spreading out in the accommodation space between the plate body and the substrate of the film-forming cover plate provided by an embodiment of the present application.

[0053] Figure 7 Schematic diagram of a liquid film layer formed by the functional solution remaining on the substrate after removing the film-forming cover plate provided by an embodiment of the present application.

[0054] Figure 8 Schematic diagram of obtaining a thin film after drying the liquid film layer provided by an embodiment of the present application.

[0055] Figure 9 Schematic diagram of a thin film prepared by the method for preparing a thin film provided by an embodiment of the present application.

[0056] Figure 10 Flowchart of the method for preparing an optoelectronic device provided by an embodiment of the present application.

[0057] Figure 11 First schematic diagram of the structure of the optoelectronic device provided by an embodiment of the present application.

[0058] Figure 12 This is the second structural schematic diagram of the optoelectronic device provided by the embodiments of the present application. Detailed implementation manners

[0059] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0060] Please refer to Figure 2 , and at the same time combine with Figures 3 to 8 , the embodiments of the present application provide a method for preparing a thin film, including:

[0061] S110, please refer to Figures 3 to 6 , provide a substrate 70 and a film-forming cover plate 80. The film-forming cover plate 80 includes a plate body 81. The film-forming cover plate 80 is disposed on the substrate 70 so that a spacing is formed between the plate body 81 and the substrate 70.

[0062] Exemplarily, the material of the film-forming cover plate 80 can be glass or resin. In some embodiments, the material of the film-forming cover plate 80 includes at least one of acrylic resin and alkyd resin. Exemplarily, the film-forming cover plate 80 may further include a protruding portion (not shown) connected to the plate body 81, so that the film-forming cover plate 80 can be clamped by using the cooperation of a clamp (such as tweezers, etc.) and the protruding portion during operation.

[0063] Please refer to Figure 4 , the plate body 81 can be square. In some other embodiments, the shape of the plate body 81 can be rectangular, circular, oval, rhombic or irregular, etc.

[0064] Exemplarily, the area of the plate body 81 is 100 mm 2 -300 mm 2 , such as 100 mm 2 , 130 mm 2 , 150 mm 2 , 180 mm 2 , 200 mm 2 , 220 mm 2 , 250 mm 2 , 270 mm 2 , 300 mm 2 and so on. In some embodiments, the plate body 81 is square with a side length of 15 mm. At this time, the area of the plate body 81 is 225 mm 2 .

[0065] Exemplarily, the thickness of the plate body 81 can be 5 μm - 15 μm, such as 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, etc.

[0066] Please refer to Figure 3 、 Figure 4 and Figure 5 , the film-forming cover plate 80 may further include a plurality of support portions 82 connected to the plate body 81.

[0067] Exemplarily, the distance between the plate body 81 of the film-forming cover plate and the substrate 70 (i.e., the height of the support portion 82) is 100 nm to 100 μm, such as 100 nm, 300 nm, 500 nm, 800 nm, 1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 30 μm, 50 μm, 80 μm, 100 μm, etc.

[0068] Please refer to Figure 4 , the support portion 82 may be cylindrical, and the radius of the cross-section of the support portion 82 may be 0.1 mm to 3 mm (such as 0.1 mm, 0.5 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, etc.). In some embodiments, the radius of the cross-section of the support portion 82 is 1 mm.

[0069] In some embodiments, the support portion 82 may be columnar, and at the same time, the cross-section of the support portion 82 is triangular, rectangular, rhombic, pentagonal, hexagonal, elliptical, irregular, etc.

[0070] Exemplarily, the number of the support portions 82 may be more than 3, such as 3, 4, 5, 6, 7, 8, 9, 10, etc., and the plurality of support portions 82 are evenly distributed along the edge of the plate body 81.

[0071] Please refer to Figure 4 , when the shape of the plate body 81 is square, the number of the support portions 82 may be 4, and the 4 support portions 82 are respectively distributed at the four corners of the plate body 81.

[0072] S120, please refer to Figure 6 , apply a functional solution between the plate body 81 and the substrate 70 to form a functional liquid film 92.

[0073] Please refer to Figure 6 , the applying a functional solution between the plate body 81 and the substrate 70 to form a functional liquid film 92 may include:

[0074] Place the film-forming cover plate 80 on the substrate 70 so that the support portion 82 of the film-forming cover plate 80 contacts the substrate 70;

[0075] Apply a functional solution to fill the accommodation space between the plate body 81 and the substrate 91 with the functional solution, forming a functional liquid film 92.

[0076] S130, please refer to Figure 7 and Figure 8 , perform a drying process on the functional liquid film 92 to obtain a thin film 93.

[0077] Please combine Figure 7 and Figure 8 , the performing the drying process on the functional liquid film 92 to obtain the thin film 93 may include:

[0078] Remove the film-forming cover plate 80, and the functional liquid film 92 remains on the substrate 70. Perform a drying process on the functional liquid film 92 to obtain a thin film 93.

[0079] Exemplarily, after applying the functional solution to the edge of the film-forming cover plate 80, the functional solution can completely fill or partially fill the accommodation space between the plate body 81 of the film-forming cover plate 80 and the substrate 70 under capillary action.

[0080] Exemplarily, the functional solution includes a first solvent and a functional material dispersed in the first solvent, and the concentration of the functional material in the functional solution is 10 mg / mL to 70 mg / mL (such as 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL, 60 mg / mL, 70 mg / mL, etc.).

[0081] Exemplarily, the first solvent can be a solvent with a boiling point above 140 °C. This is because when the boiling point of the first solvent in the functional solution is relatively high, the solvent evaporation rate of the functional liquid film 92 formed by the functional solution is relatively slow, so that the functional liquid film 92 can have enough time to level, which is beneficial to improving the thickness uniformity of the functional liquid film 92, and thus the thickness uniformity of the finally obtained thin film 93 can be improved.

[0082] Exemplarily, the functional material may include at least one of a hole injection material, a hole transport material, a light-emitting material, and an electron transport material.

[0083] Exemplarily, the luminescent material may include at least one of an organic luminescent material and a quantum dot luminescent material, and the organic luminescent material includes 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, 1,4,7,10-tetra-tert-butyldinaphthacene, rubrene derivative, a thermally activated delayed fluorescence material, an exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, or one or more thereof;The quantum dot luminescent material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS; 2 , CuInSe 2 , and AgInS 2 and at least one of them.

[0084] Exemplarily, the hole transporting material may include at least one of 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tris(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polysfluorene and its derivatives, polythiophene (TPH) and its derivatives.

[0085] Exemplarily, the hole injection material may include poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid (PEDOT:PSS), copper phthalocyanine (CuPc), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), poly(ethylenedioxythiophene) (PEDOT), PEDOT:PSS doped with MoO 3derivatives (PEDOT:PSS-MoO 3 ), at least one of 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCNQ), transition metal oxides, and transition metal chalcogenides. Exemplarily, the transition metal oxides may include MoO x , VO x , WO x , CrO x , one or more of CuO. Exemplarily, the metal chalcogenides may include MoS 2 , MoSe 2 , WS 2 , WSe 2 , one or more of CuS.

[0086] Exemplarily, the luminescent material may include at least one of an organic luminescent material and a quantum dot luminescent material, and the organic luminescent material includes 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III), 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, 1,4,7,10-tetra-tert-butylperylene, rubrene derivatives, thermally activated delayed fluorescence materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, or one or more thereof;The quantum dot light-emitting material includes at least one of a single-structure quantum dot and a core-shell structure quantum dot. The material of the single-structure quantum dot, the core material of the core-shell structure quantum dot, and the shell material of the core-shell structure quantum dot each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from CuInS; 2 , CuInSe 2 , and AgInS 2 and at least one of them.

[0087] Exemplarily, the electron transport layer material may include at least one of a metal oxide, a doped metal oxide, a II-VI group semiconductor material, a III-V group semiconductor material, and a I-III-VI group semiconductor material. The metal oxide is selected from ZnO, BaO, TiO 2, SnO 2 at least one of; the metal oxides in the doped metal oxides are selected from ZnO, TiO 2 , SnO 2 at least one of; the doping elements are selected from at least one of Al, Mg, Li, In, Ga; the group II-VI semiconductor materials are selected from at least one of ZnS, ZnSe, CdS; the group III-V semiconductor materials are selected from at least one of InP, GaP; the group I-III-VI semiconductor materials are selected from at least one of CuInS, CuGaS.

[0088] Exemplarily, the first solvent includes at least one of alkane solvents and alkene solvents.

[0089] Exemplarily, the alkane solvent can be an alkane with 8 to 16 carbon atoms. In some embodiments, the alkane solvent includes at least one of dodecane, n-hexadecane, and cyclohexylcyclohexane.

[0090] Exemplarily, the alkene solvent can be an alkene with 12 to 16 carbon atoms. In some embodiments, the alkene solvent includes at least one of dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, and 1-hexadecene.

[0091] Exemplarily, the surface tension of the first solvent is 20 mN / m to 40 mN / m (measured at 25 °C using a SITA theta tl5 dynamic surface tension meter), such as 20 mN / m, 22 mN / m, 25 mN / m, 28 mN / m, 30 mN / m, 32 mN / m, 35 mN / m, 38 mN / m, 40 mN / m, etc.

[0092] Exemplarily, the surface tension of the functional solution is 20 mN / m to 50 mN / m (measured at 25 °C using a SITA theta tl5 dynamic surface tension meter), such as 20 mN / m, 22 mN / m, 25 mN / m, 28 mN / m, 30 mN / m, 32 mN / m, 35 mN / m, 38 mN / m, 40 mN / m, 42 mN / m, 45 mN / m, 48 mN / m, 50 mN / m, etc.

[0093] The first solvent selected in this application includes at least one of alkane solvents and alkene solvents. The surface tension of the functional solution prepared with this first solvent is 20 mN / m to 50 mN / m. The functional solution with a surface tension within this range has good spreading performance on the surface of the substrate 70 and can be effectively spread to form a uniform film layer, thereby improving the film thickness uniformity of the prepared thin film 93.

[0094] Exemplarily, "performing a drying treatment on the functional liquid film 92" may specifically include: placing the functional liquid film 92 in a vacuum for drying, where the vacuum degree of the drying treatment is less than 100 Pa, and the drying time is 5 minutes to 30 minutes (such as 5 minutes, 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, etc.).

[0095] Exemplarily, the drying treatment of the functional liquid film 92 can be carried out in a vacuum drying device.

[0096] Exemplarily, the vacuum degree of the drying treatment can be less than 0.1 Pa. In some embodiments, the vacuum degree inside the vacuum drying device can be 0.004 Pa - 0.01 Pa.

[0097] Exemplarily, the drying time can be 5 minutes, 7 minutes, 10 minutes, 13 minutes, 15 minutes, 17 minutes, 20 minutes, 22 minutes, 25 minutes, 28 minutes, 30 minutes, etc.

[0098] Exemplarily, after obtaining the thin film 93, the method for preparing the thin film further includes: performing an annealing treatment on the thin film 93, where the annealing temperature is 80°C to 120°C (such as 80°C, 90°C, 100°C, 110°C, 120°C, etc.), and the annealing time is 5 minutes to 10 minutes (such as 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, etc.).

[0099] Please refer to Figure 9 , Figure 9 , which is a schematic diagram of the thin film prepared by the method for preparing the thin film according to the embodiment of the present application. As can be seen from Figure 9 , the thickness consistency of each region of the thin film prepared by the method for preparing the thin film according to the embodiment of the present application is relatively good. At the same time, please refer to Figure 1 , Figure 1 , which is a schematic diagram of the thin film prepared by the spin coating method in the related art. As can be seen from Figure 1 , in the thin film prepared by the spin coating method, the thickness of the film layer in some regions is relatively large, and the thickness of the film layer in some regions is relatively small. That is to say, the uniformity of the thin film prepared by the spin coating method is relatively poor. That is, compared with the thin film prepared by the spin coating method, the thin film prepared by the method for preparing the thin film according to the embodiment of the present application has better thickness uniformity.

[0100] In the method for preparing the thin film provided by the embodiment of the present application, most of the functional solution used can be converted into the thin film 93. That is to say, the waste rate of raw materials in this preparation method is extremely low, so that the preparation cost of the thin film 93 can be reduced. Moreover, the thickness uniformity of the thin film 93 prepared by this method is good. When the above method for preparing the thin film is used to prepare the functional layer in the optoelectronic device 100, the production cost of the optoelectronic device 100 can be significantly reduced. At the same time, due to the good thickness uniformity of the functional layer, the electrical performance of the optoelectronic device 100 can be improved.

[0101] Please refer to Figure 10 , and in combination with Figure 11 and Figure 12 , the embodiment of the present application also provides a method for preparing an optoelectronic device, including:

[0102] S210, please combine Figure 11 and Figure 12 , provide a substrate, and the substrate includes a first electrode 21.

[0103] S220, please combine Figure 11 and Figure 12 , prepare a functional layer on the substrate, and the functional layer includes a functional sub-film layer, and the functional sub-film layer is prepared by using the method for preparing the thin film in any of the above embodiments.

[0104] Exemplarily, the functional layer includes a light-emitting layer 40. Preparing the light-emitting layer 40 on the substrate includes: forming the light-emitting layer 40 on the substrate by using the method for preparing the thin film in any of the above embodiments; wherein, the functional material includes a light-emitting material, and the first solvent includes at least one of an alkane solvent and an alkene solvent.

[0105] Please combine Figure 11 , when the first electrode 21 is an anode; the substrate may include a first electrode 21, a hole injection layer 31, and a hole transport layer 32 that are sequentially stacked. At this time, "providing the substrate" may include: forming a hole injection layer 31 on the first electrode 21, and forming a hole transport layer 32 on the hole injection layer 31. Exemplarily, "forming a hole transport layer 32 on the hole injection layer 31" may specifically include: providing a hole transport material solution, applying the hole transport material solution to the hole injection layer 31 by using a coating method (such as spin coating), and drying the hole transport material solution to obtain the hole transport layer 32; wherein, the hole transport material solution includes a second solvent and a hole transport material dispersed in the second solvent, and the second solvent includes an aromatic solvent.

[0106] Exemplarily, the concentration of the hole transport material solution can be 3 mg / mL to 11 mg / mL (such as 3 mg / mL, 4 mg / mL, 6 mg / mL, 7 mg / mL, 8 mg / mL, 9 mg / mL, 10 mg / mL, 11 mg / mL, etc.). In some embodiments, the concentration of the hole transport material solution is 8 mg / mL.

[0107] Exemplarily, the aromatic solvent includes at least one of chlorobenzene, toluene, and benzene.

[0108] It should be noted that when the second solvent in the hole transport material solution includes an aromatic solvent and the first solvent of the functional solution of the light-emitting layer 40 includes an alkane solvent and / or an alkene solvent, due to the good compatibility between the aromatic solvent and the alkane solvent and the alkene solvent, therefore, the functional solution of the light-emitting layer 40 can spread well on the hole transport layer 32, so that a functional liquid film 92 with a uniform thickness can be formed, and then a light-emitting layer 40 with a uniform thickness can be formed.

[0109] Please refer to Figure 12 When the first electrode 21 is a cathode, the substrate may include a first electrode 21 and an electron transport layer 50 stacked in sequence; at this time, "providing the substrate" may include: forming an electron transport layer 50 on the first electrode 21. Exemplarily, "forming an electron transport layer 50 on the first electrode 21" may specifically include: providing an electron transport material solution, applying the electron transport material solution to the first electrode 21 by a coating method, and drying the electron transport material solution to obtain the electron transport layer 50; wherein, the electron transport material solution includes a third solvent and an electron transport material dispersed in the third solvent, and the third solvent includes at least one of an alcohol solvent and an alcohol ether solvent.

[0110] Exemplarily, the alcohol solvent may include at least one of n-butanol, ethanol, glycerol, ethylene glycol, diethylene glycol, methoxybutanol, dipropylene glycol, and glycerol.

[0111] Exemplarily, the alcohol ether solvent may include at least one of ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, propylene glycol monobutyl ether, and propylene glycol dimethyl ether.

[0112] It should be noted that when the third solvent in the electron transport material solution includes an alcohol solvent and / or an alcohol ether solvent and the first solvent of the functional solution of the light-emitting layer 40 includes an alkane solvent and / or an alkene solvent, due to the certain affinity between the alcohol solvent, the alcohol ether solvent and the alkane solvent, the alkene solvent, therefore, the functional solution of the light-emitting layer 40 can spread well on the electron transport layer 50, so that a functional liquid film 92 with a uniform thickness can be formed, and then a light-emitting layer 40 with a uniform thickness can be formed.

[0113] S230, please combine Figure 11 and Figure 12 to form a second electrode 22 on the functional layer, thereby obtaining the optoelectronic device 100.

[0114] Exemplarily, please combine Figure 11 and Figure 12 After forming the second electrode 22, an encapsulation layer 61 can further be formed on the second electrode 22.

[0115] Exemplarily, please combine Figure 11 and Figure 12 After laminating to form the encapsulation layer 61, an encapsulation cover plate 62 can further be laminated on a side of the encapsulation layer 61 away from the second electrode 22. Since the material of the encapsulation layer 61 (resin material) has good adhesion performance, it can further play a connecting role between the encapsulation cover plate 62 and the second electrode 22.

[0116] Exemplarily, after laminating the encapsulation cover plate 62, the obtained optoelectronic device 100 can further be annealed (annealing temperature: 100°C to 200°C, annealing time: 5 minutes to 20 minutes) to further improve the connection tightness of each film layer inside the optoelectronic device 100.

[0117] Please refer to Figure 11 and Figure 12 An embodiment of the present application further provides an optoelectronic device 100. The optoelectronic device 100 can be obtained by using the preparation method of the optoelectronic device in any of the above embodiments. The optoelectronic device 100 includes a first electrode 21 and a second electrode 22 which are oppositely arranged, and a functional layer disposed between the first electrode 21 and the second electrode 22. The functional layer includes functional sub-film layers.

[0118] Please combine Figure 11 and Figure 12 The functional layer includes at least one of a hole injection layer 31, a hole transport layer 32, a light-emitting layer 40, and an electron transport layer 50 which are stacked. At least one of the hole injection layer 31, the hole transport layer 32, the light-emitting layer 40, and the electron transport layer 50 is obtained by using the preparation method of the thin film in any of the above embodiments.

[0119] Please refer to Figure 11 and Figure 12 The optoelectronic device 100 may further include a substrate 10. The functional layer is disposed on a side of the substrate 10 away from the functional layer. Exemplarily, the substrate 10 can be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate 10 can be selected from but not limited to at least one of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0120] Please refer to Figure 11 andFigure 12 In addition, the optoelectronic device 100 may further include a packaging layer 61, which covers the upper surface of the second electrode 22 and the sides of the first electrode 21, the functional layer, and the second electrode 22, so as to protect the first electrode 21, the functional layer, and the second electrode 22 from being eroded by external water and oxygen, and improve the service life of the optoelectronic device 100.

[0121] Exemplarily, the material of the packaging layer 61 may be a resin material.

[0122] Please refer to Figure 11 and Figure 12 In addition, the optoelectronic device 100 may further include a packaging cover plate 62, which is disposed on the side of the packaging layer 61 away from the second electrode 22, and the packaging cover plate 62 can further protect the first electrode 21, the functional layer, and the second electrode 22.

[0123] Exemplarily, the material of the packaging cover plate 62 may be glass or resin.

[0124] Please refer to Figure 11 In some embodiments, the first electrode 21 is an anode, the second electrode 22 is a cathode, a hole injection layer 31 and a hole transport layer 32 are stacked between the first electrode 21 and the light-emitting layer 40, wherein the hole injection layer 31 is disposed close to the first electrode 21, the hole transport layer 32 is disposed close to the light-emitting layer 40, and an electron transport layer 50 is disposed between the second electrode 22 and the light-emitting layer 40.

[0125] Please refer to Figure 12 In some embodiments, the first electrode 21 is a cathode, the second electrode 22 is an anode, an electron transport layer 50 is disposed between the first electrode 21 and the light-emitting layer 40, and a hole injection layer 31 and a hole transport layer 32 are stacked between the second electrode 22 and the light-emitting layer 40, wherein the hole injection layer 31 is disposed close to the second electrode 22, and the hole transport layer 32 is disposed close to the light-emitting layer 40.

[0126] Exemplarily, the material of the light-emitting layer 40 may be selected from at least one of the aforementioned light-emitting materials.

[0127] Exemplarily, the material of the hole transport layer 32 may be selected from at least one of the aforementioned hole transport materials.

[0128] Exemplarily, the material of the hole injection layer 31 may be selected from at least one of the aforementioned hole injection materials.

[0129] Exemplarily, the material of the electron transport layer 50 may be selected from at least one of the aforementioned electron transport materials.

[0130] Exemplarily, the first electrode 21 and the second electrode 22 can each independently be selected from doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, elemental metal electrodes or alloy electrodes. The material of the doped metal oxide electrode can include, but is not limited to, one or more of indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), aluminum-doped magnesium oxide (AMO), cadmium-doped zinc oxide. The composite electrode is an electrode formed by laminating two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., where " / " represents a laminated structure, for example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer and an AZO layer laminated in sequence. The material of the elemental metal electrode can include, but is not limited to, one or more of silver (Ag), magnesium (Mg), aluminum (Al), gold (Au), gallium (Ga), nickel (Ni), platinum (Pt), iridium (Ir), copper (Cu), molybdenum (Mo), calcium (Ca), barium (Ba). The alloy electrode includes, but is not limited to, an Au:Mg alloy electrode or an Ag:Mg alloy electrode.

[0131] In some embodiments, the anode can be an electrode with a relatively high work function, for example, it can include, but is not limited to, one or more of a doped metal oxide electrode with a relatively high work function, an elemental metal electrode with a relatively high work function, and a carbon nanotube electrode; the material of the elemental metal electrode with a relatively high work function can be Ni, Pt, Au, Ag, Ir, etc.

[0132] In some embodiments, the cathode can be an electrode with a relatively low work function, for example, it can include, but is not limited to, an elemental metal electrode with a relatively low work function, a composite electrode with a relatively low work function, and an alloy electrode with a relatively low work function; the material of the elemental metal electrode with a relatively low work function can be Ca, Ba, Al, Mg, etc.; the structure of the composite electrode with a relatively low work function can be Ca / Al, LiF / Ca, LiF / Al, BaF 2 / Al, CsF / Al, CaCO 3 / Al, BaF 2 / Ca / Al, etc.; the alloy electrode with a relatively low work function can be Au:Mg or Ag:Mg, etc.

[0133] Exemplarily, the thickness of the hole transport layer 32 is 10 nm - 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0134] Exemplarily, the thickness of the hole injection layer 31 is 20 nm - 120 nm, such as 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm, 120 nm, etc.

[0135] Exemplarily, the thickness of the light emitting layer 40 is 10 nm - 60 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, etc.

[0136] Exemplarily, the thickness of the electron transport layer 50 is 15 nm - 60 nm, such as 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, etc.

[0137] Exemplarily, the thickness of the anode is 10 nm - 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0138] Exemplarily, the thickness of the cathode is 15 nm - 100 nm, such as 15 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0139] The embodiment of the present application further provides a display device, including the optoelectronic device 100 in any of the above embodiments or the optoelectronic device 100 prepared by the preparation method of the optoelectronic device in any of the above embodiments.

[0140] The optoelectronic device and its preparation method provided by the present application will be introduced in detail below by way of specific embodiments.

[0141] Example 1

[0142] A preparation method of an optoelectronic device includes the following steps:

[0143] Provide a prefabricated board, which includes a substrate and an anode (IZO) disposed on the substrate. The thickness of the anode is 70 nm. A hole injection material solution is coated on the anode by spin coating (at a rotation speed of 3000 rpm). The hole injection material solution includes PEDOT:PSS and the solvent ethyl benzoate (the concentration of the hole injection material solution is 3 wt%), obtaining a first liquid film layer. After annealing the first liquid film layer (at 230 °C for 30 minutes), a hole injection layer is obtained, and the thickness of the hole injection layer is 70 nm;

[0144] A hole transport material solution is coated on the hole injection layer by spin coating (at a rotation speed of 3000 rpm). The hole transport material solution includes TFB and the solvent chlorobenzene (the concentration of the hole transport material solution is 8 mg / ml), obtaining a second liquid film layer. After annealing the second liquid film layer (at 230 °C for 30 minutes), a hole transport layer is obtained, and the thickness of the hole transport layer is 55 nm, forming a substrate;

[0145] A film-forming cover plate is provided on one side of the hole transport layer of the substrate. The film-forming cover plate includes a square plate body and four support parts located at the four corners of the plate body. The plate body is square with a side length of 15 mm, and the height of the support part is 120 μm. 24 μL of quantum dot solution is dropped at the edge of the film-forming cover plate using a pipette. The quantum dot solution enters the accommodation space between the plate body of the film-forming cover plate and the hole transport layer under capillary action and spreads out. The quantum dot solution includes quantum dots and dodecane (solvent). The structure of the quantum dots is core-shell structure quantum dots, the core material is CdSe, and the shell material is ZnS. The concentration of the quantum dot solution is 40 mg / ml. The film-forming cover plate is removed, and the third liquid film layer formed by the quantum dot solution remaining on the hole transport layer is allowed to stand for 15 seconds to level the liquid. The third liquid film layer is subjected to vacuum drying treatment in a vacuum drying device (the vacuum degree is 1 Pa, and the treatment time is 15 minutes), obtaining a quantum dot light-emitting layer. Then, the quantum dot light-emitting layer is annealed (at 100 °C for 5 minutes), and the thickness of the quantum dot light-emitting layer is 40 nm; During the preparation of the quantum dot light-emitting layer, the surface tension of the solvent dodecane at 25 °C is measured to be 25.5 using a t15 surface tensiometer, and the surface tension of a 40 mg / ml quantum dot solution with dodecane as the solvent at 25 °C is 30.5;

[0146] The electron transport material solution, which includes magnesium-doped zinc oxide alloy (ZMO) and solvent ethanol (the concentration of the electron transport material solution is 40 mg / ml), is spin-coated (rotation speed: 3000 rpm) on the quantum dot light-emitting layer to obtain the fourth liquid film layer. The fourth liquid film layer is vacuum-dried (vacuum degree: 1 Pa, treatment time: 15 minutes) in a vacuum drying device to obtain the electron transport layer. Then, the electron transport layer is annealed (100 °C, 15 minutes) in a nitrogen environment. After that, the electron transport layer is exposed to air for 10 minutes. The thickness of the electron transport layer is 38 nm;

[0147] The cathode (made of silver) is formed on the electron transport layer by vacuum evaporation. The thickness of the cathode is 67 nm;

[0148] The encapsulation glue is coated on the upper side, side of the cathode, and the side of each film layer below the cathode. The encapsulation cover plate is attached to the encapsulation glue to obtain the optoelectronic device.

[0149] Example 2

[0150] A method for preparing an optoelectronic device, which is different from Example 1 in that: during the preparation of the quantum dot light-emitting layer, the solvent of the quantum dot solution used is different, the height of the support part of the film-forming cover plate is different, the volume of the quantum dot solution dropped at the edge of the film-forming cover plate is different, and the standing time of the third liquid film layer formed by the quantum dot solution remaining on the hole transport layer after removing the film-forming cover plate is different;

[0151] The solvent of the quantum dot solution used in this Example 2 is n-hexadecane. The surface tension of the solvent n-hexadecane at 25 °C is measured by a t15 surface tension meter to be 27.2, and the surface tension of the 40 mg / ml quantum dot solution with n-hexadecane as the solvent at 25 °C is 32.2; the height of the support part of the film-forming cover plate used in this Example 2 is 120 μm, the volume of the quantum dot solution dropped at the edge of the film-forming cover plate by a pipette is 26 μL, the standing time of the third liquid film layer formed by the quantum dot solution remaining on the hole transport layer after removing the film-forming cover plate is 20 seconds, and the thickness of the quantum dot light-emitting layer prepared in this Example 2 is 40 nm.

[0152] Example 3

[0153] A method for preparing an optoelectronic device, which is different from Example 1 in that: during the preparation of the quantum dot light-emitting layer, the solvent of the quantum dot solution used is different, the height of the support part of the film-forming cover plate is different, the volume of the quantum dot solution dropped at the edge of the film-forming cover plate is different, and the standing time of the third liquid film layer formed by the quantum dot solution remaining on the hole transport layer after removing the film-forming cover plate is different;

[0154] The solvent of the quantum dot solution used in Example 3 is cyclohexylcyclohexane. The surface tension of the solvent cyclohexylcyclohexane at 25 °C was measured using a t15 surface tensiometer to be 32.8, and the surface tension of a 40 mg / ml quantum dot solution with cyclohexylcyclohexane as the solvent at 25 °C was 37.8. In Example 3, the height of the support portion of the film-forming cover plate is 160 μm. The volume of the quantum dot solution dropped at the edge of the film-forming cover plate using a pipette is 32 μL. The standing time of the third liquid film layer formed by the quantum dot solution remaining on the hole transport layer after removing the film-forming cover plate is 35 seconds. The thickness of the quantum dot light-emitting layer prepared in Example 3 is 40 nm.

[0155] Example 4

[0156] A method for preparing an optoelectronic device, which is different from Example 1 in that the concentration of the quantum dot solution is different, the height of the support portion of the film-forming cover plate used is different, and the volume of the quantum dot solution dropped at the edge of the film-forming cover plate using a pipette is different. In this Example 4, the concentration of the quantum dot solution is 20 mg / ml, the height of the support portion of the film-forming cover plate used is 200 μm, the volume of the quantum dot solution dropped at the edge of the film-forming cover plate using a pipette is 45 μL, and the thickness of the obtained quantum dot light-emitting layer is 40 nm.

[0157] Example 5

[0158] A method for preparing an optoelectronic device, which is different from Example 1 in that the concentration of the quantum dot solution is different, the height of the support portion of the film-forming cover plate used is different, and the volume of the quantum dot solution dropped at the edge of the film-forming cover plate using a pipette is different. In this Example 5, the concentration of the quantum dot solution is 60 mg / ml, the height of the support portion of the film-forming cover plate used is 80 μm, the volume of the quantum dot solution dropped at the edge of the film-forming cover plate using a pipette is 18 μL, and the thickness of the obtained quantum dot light-emitting layer is 40 nm.

[0159] Comparative Example 1

[0160] A method for preparing an optoelectronic device, which is different from Example 1 in that: the quantum dot solution is coated on the hole transport layer by spin coating to obtain a third liquid film layer, and then the third liquid film layer is subjected to vacuum drying treatment and annealing treatment to obtain a quantum dot light-emitting layer. In this Comparative Example 1, the volume of the quantum dot solution used is 120 μL, and the thickness of the obtained quantum dot light-emitting layer is 40 nm.

[0161] By comparing Examples 1-3 with Comparative Example 1, it can be seen that the differences between Examples 1-3 and Comparative Example 1 are as follows: In Examples 1-3 of the present application, a film-forming cover plate is used to form a film of the quantum dot solution through capillary action, while in Comparative Example 1, a traditional spin coating method is used to form a film of the quantum dot solution. It can be seen that when preparing a quantum dot light-emitting layer with the same thickness (40 nm), the volume of the quantum dot solution required in Examples 1-3 of the present application is 24 μL to 32 μL, while the volume of the quantum dot solution required in Comparative Example 1 is 120 μL. That is to say, the volume of the quantum dot solution required in Examples 1-3 of the present application is much smaller than that required in Comparative Example 1. That is, the method of the examples of the present application can significantly reduce the volume of the quantum dot solution required for preparing the quantum dot light-emitting layer, thereby reducing the preparation cost of the quantum dot light-emitting layer and further reducing the production cost of optoelectronic devices.

[0162] By comparing Examples 1-3, it can be seen that when different solvents are used in the quantum dot solution, the volume of the quantum dot solution required for preparing a quantum dot light-emitting layer with the same thickness (40 nm) is also different. Among Examples 1-3, the surface tension of the solvent (dodecane) used in the quantum dot solution of Example 1 is the smallest, and the surface tension of the solvent (cyclohexylcyclohexane) used in the quantum dot solution of Example 3 is the largest. Therefore, the volume of the quantum dot solution required for preparing a quantum dot light-emitting layer with the same thickness (40 nm) in Example 1 is the smallest (24 μL), and the volume of the quantum dot solution required for preparing a quantum dot light-emitting layer with the same thickness (40 nm) in Example 3 is the largest (32 μL).

[0163] The optoelectronic devices prepared in Examples 1-5 and Comparative Example 1 were subjected to performance tests, and the results are shown in the following table.

[0164] Voltage (V) LT95@1000nit (h) CE (cd / A) Example 1 4.15 101.14 14.92 Example 2 3.96 106.68 14.27 Example 3 4.02 111.47 14.83 Example 4 3.85 100.32 12.33 Example 5 4.69 98.47 18.25 Comparative Example 1 6.56 101.78 16.27

[0165] In the above table, the voltage refers to the voltage supplied to the device when the luminous brightness is 1000 nit under a constant current of 2 mA, LT95@1000 nit refers to the lifetime when the luminous brightness of the optoelectronic device becomes 95% of the maximum luminous brightness, and CE refers to the luminous efficiency of the optoelectronic device, which is the light intensity corresponding to unit current.

[0166] As can be seen from the above table, when the thickness of the quantum dot light-emitting layer is the same (40 nm), the service life (LT95@1000nit-a) and current efficiency (C.E.) of the optoelectronic devices in Examples 1-3 and Comparative Example 1 do not differ much. That is to say, the performance of the quantum dot light-emitting layer prepared by the film-forming cover plate capillary adsorption method of Examples 1-3 of the present application is basically the same as that of the quantum dot light-emitting layer prepared by the spin coating method of Comparative Example 1. That is to say, the present application can ensure that the performance of the optoelectronic device remains basically unchanged while reducing the raw material cost.

[0167] The above has introduced in detail the thin film provided by the embodiments of the present application, its preparation method, the optoelectronic device and its preparation method, and the display device. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for preparing a thin film, characterized in that, comprising: providing a substrate and a film-forming cover plate, the film-forming cover plate comprising a plate body, disposing the film-forming cover plate on the substrate so as to form a spacing between the plate body and the substrate; applying a functional solution between the plate body and the substrate to form a functional liquid film; performing a drying treatment on the functional liquid film to obtain the thin film.

2. The method for preparing a thin film according to claim 1, characterized in that, the film-forming cover plate further comprises a plurality of support portions connected to the plate body, and the step of applying a functional solution between the plate body and the substrate to form a functional liquid film comprises: disposing the film-forming cover plate on the substrate so that the support portions of the film-forming cover plate contact the substrate; applying the functional solution so that the functional solution fills the accommodation space between the plate body and the substrate to form the functional liquid film; and / or the step of performing a drying treatment on the functional liquid film to obtain the thin film comprises: removing the film-forming cover plate, leaving the functional liquid film on the substrate, and performing a drying treatment on the functional liquid film to obtain the thin film.

3. The method for preparing a thin film according to claim 1, characterized in that, the material of the film-forming cover plate is glass or resin; and / or the thickness of the plate body is 5 μm - 15 μm; and / or The area of the plate body is 100 mm 2 - 300 mm 2 ; and / or the spacing between the plate body and the substrate is 100 nm to 100 μm.

4. The method for preparing a thin film according to claim 1, characterized in that, the step of performing a drying treatment on the functional liquid film comprises: drying the functional liquid film in a vacuum, the degree of vacuum of the drying treatment being less than 100 Pa, and the time of the drying treatment being 5 minutes to 30 minutes; after obtaining the thin film, the method for preparing the thin film further comprises: performing an annealing treatment on the thin film, the annealing temperature being 80°C to 120°C, and the annealing time being 5 minutes to 10 minutes.

5. The method for preparing a thin film according to claim 1, characterized in that, the functional solution comprises a first solvent and a functional material dispersed in the first solvent, and the concentration of the functional material in the functional solution is 10 mg / mL to 70 mg / mL; and / or the surface tension of the functional solution is 20 mN / m to 50 mN / m.

6. The method for preparing a thin film according to claim 5, characterized in that, the functional material comprises at least one of a hole injection material, a hole transport material, a light-emitting material, and an electron transport material; and / or the first solvent comprises at least one of an alkane solvent and an alkene solvent; the alkane solvent is an alkane having 8 to 16 carbon atoms, and the alkene solvent is an alkene having 12 to 16 carbon atoms; and / or the alkane solvent comprises at least one of dodecane, n-hexadecane, and cyclohexylcyclohexane, and the alkene solvent comprises at least one of dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, and 1-hexadecene.

7. A thin film, characterized in that, it is prepared by using the method for preparing a thin film according to any one of claims 1 - 6.

8. A method for preparing an optoelectronic device, characterized in that, comprising: Provide a substrate, the substrate comprising a first electrode; Prepare a functional layer on the substrate, the functional layer comprising a functional sub-film layer, the functional sub-film layer being prepared by the preparation method of the thin film according to any one of claims 1-6; Form a second electrode on the functional layer to obtain an optoelectronic device.

9. The method for preparing an optoelectronic device according to claim 8, wherein, the functional layer comprises a light-emitting layer, and preparing the light-emitting layer on the substrate comprises: forming a light-emitting layer on the substrate by the preparation method of the thin film according to any one of claims 5-6; wherein, the functional material comprises a light-emitting material, and the first solvent comprises at least one of an alkane solvent and an alkene solvent.

10. The method for preparing an optoelectronic device according to claim 9, wherein, The luminescent material includes at least one of an organic luminescent material and a quantum dot luminescent material. The organic luminescent material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, 1,4,7,10-tetra-tert-butylperylene, a rubrene derivative, a thermally activated delayed fluorescence material, an exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives;The quantum dot light-emitting material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS; 2 , CuInSe 2 , and AgInS 2 ; and / or the alkane solvent is an alkane having 8 to 16 carbon atoms; and / or the alkene solvent is an alkene having 12 to 16 carbon atoms.

11. An optoelectronic device prepared by the method for preparing an optoelectronic device according to any one of claims 8-10, wherein, it comprises a first electrode and a second electrode arranged opposite to each other and a functional layer disposed between the first electrode and the second electrode, the functional layer comprising a functional sub-film layer.

12. The optoelectronic device according to claim 11, wherein, the functional layer comprises at least one of a hole injection layer, a hole transport layer, a light-emitting layer and an electron transport layer; when the first electrode is an anode and the second electrode is a cathode, a hole injection layer and a hole transport layer are arranged in a stacked manner between the first electrode and the light-emitting layer, wherein the hole injection layer is arranged close to the first electrode, the hole transport layer is arranged close to the light-emitting layer, and an electron transport layer is arranged between the second electrode and the light-emitting layer; or when the first electrode is a cathode and the second electrode is an anode, an electron transport layer is arranged between the first electrode and the light-emitting layer, and a hole injection layer and a hole transport layer are arranged in a stacked manner between the second electrode and the light-emitting layer, wherein the hole injection layer is arranged close to the second electrode, and the hole transport layer is arranged close to the light-emitting layer.

13. The optoelectronic device according to claim 12, wherein, The materials of the hole transport layer include at least one of 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, polysfluorene and its derivatives, polythiophene and its derivatives; and / or The materials of the hole injection layer include at least one of poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, copper phthalocyanine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, poly(dioxyethylthiophene), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, transition metal oxides and transition metal chalcogenides; and / or The material of the light-emitting layer includes at least one of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material includes one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, 1,4,7,10-tetra-tert-butyl naphthacene, rubrene derivative, a thermally activated delayed fluorescence material, an exciplex light-emitting material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot light-emitting material includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots each include at least one of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The II-VI group compounds are selected from at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds are selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds are selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds are selected from at least one of CuInS; 2 , CuInSe 2 , and AgInS 2 ; and / or The materials of the electron transport layer include at least one of metal oxides, doped metal oxides, II-VI group semiconductor materials, III-V group semiconductor materials, and I-III-VI group semiconductor materials. The metal oxide is selected from at least one of ZnO, BaO, TiO 2 , SnO 2 ; The metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO 2 , SnO 2 ; The doping element is selected from at least one of Al, Mg, Li, In, and Ga. The II-VI semiconductor group material is selected from at least one of ZnS, ZnSe, and CdS; The III-V semiconductor group material is selected from at least one of InP and GaP; The I-III-VI group semiconductor material is selected from at least one of CuInS and CuGaS; and / or The first electrode and the second electrode are each independently selected from a doped metal oxide particle electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a metal elemental electrode, or an alloy electrode. The material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO 2 / Ag / TiO 2 、TiO 2 / Al / TiO 2 , ZnS / Ag / ZnS, or ZnS / Al / ZnS. The material of the metal elemental electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Ca, Mg, and Ba.

14. The optoelectronic device according to claim 12, wherein the thickness of the hole transport layer is 10 nm - 100 nm, the thickness of the hole injection layer is 20 nm - 120 nm, the thickness of the light-emitting layer is 10 nm - 60 nm, the thickness of the electron transport layer is 15 nm - 60 nm, the thickness of the anode is 10 nm - 100 nm, and the thickness of the cathode is 15 nm - 100 nm.

15. A display device, wherein An optoelectronic device prepared by the method for preparing an optoelectronic device according to any one of claims 8-10, or an optoelectronic device according to any one of claims 11-14.

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