Temporary bonding glue for low-temperature bonding, preparation method and bonding and de-bonding method

Abstract

The invention provides a temporary bonding adhesive for low-temperature bonding, a preparation method and a bonding and de-bonding method. The temporary bonding adhesive for low-temperature bonding comprises the following components in parts by weight: 30-60 parts of a solvent; 5 to 20 parts of deionized water; 20 to 40 parts of self-crosslinking resin; 0.5-2 parts of a water repellent agent; 0.5-2 parts of an emulsifier; and 0.1-1 part of a leveling agent. The temporary bonding adhesive for low-temperature bonding can realize successful bonding at a low temperature lower than 100 DEG C, effectively avoids the damage of a wafer structure caused by a traditional high-temperature bonding process, can be decomposed and dissolved in a weak base aqueous solution to realize de-bonding after a bonding task is completed, and has no cleaning residue. The temporary bonding adhesive for low-temperature bonding has the remarkable advantages of low-temperature bonding, high thickness uniformity, no residue, easiness in de-bonding and the like, can meet the requirements of advanced semiconductor manufacturing and microelectronic packaging fields on bonding materials, and has a wide application prospect.

Description

Technical Field

[0001] The invention relates to temporary bonding adhesive technology, and in particular to a temporary bonding adhesive for low-temperature bonding, a preparation method, and a bonding and debonding method. Background Art

[0002] With the continuous advancement of semiconductor technology, chip size is gradually approaching the physical limit. The traditional way of improving performance by reducing the size of transistors has encountered a bottleneck, and Moore's Law has gradually become invalid. In order to continue the development of the semiconductor industry, advanced packaging technology has become an important breakthrough, and temporary bonding adhesive is one of the key materials in advanced packaging technology. Advanced packaging technology, such as 2.5D / 3D packaging, can effectively make up for the shortcomings of traditional packaging and system-on-chip (SoC) by raising the inter-chip communication problem to the level 1 packaging level, and improve the overall performance of the chip. In these packaging processes, wafers need to be thinned, TSV (Through-Silicon Via) fabricated, and multiple wafers stacked. However, the flexibility and brittleness of large-size thinned wafers make them very prone to warping and breakage during processing, so temporary bonding adhesive is needed to bond the wafer and the temporary carrier together to provide support for the wafer to meet the demanding back-side process requirements.

[0003] During the back processing of thin wafers, the bonding system has to experience high temperature, oxidants, strong acids, strong alkalis and various organic solvent environments. Therefore, as a temporary bonding material, it must have good thermal stability and chemical stability to ensure stable performance under complex process conditions.

[0004] Existing temporary bonding adhesives are mainly composed of reinforcing agents, tackifying resins, polymer resins, high boiling point solvents, plasticizers, low boiling point solvents, antioxidants and wetting agents. However, these materials still have some problems in practical applications, such as high debonding temperature and difficulty in cleaning, which not only increases the complexity of the process, but may also cause damage to the wafer during the debonding process.

[0005] Therefore, there is an urgent need to develop a low-temperature bonding, easy-to-clean temporary bonding adhesive to replace the traditional solvent-based temporary bonding adhesive. Summary of the invention

[0006] The purpose of the present invention is to propose a temporary bonding glue for low-temperature bonding, in response to the problems that the existing temporary bonding glue has too high bonding temperature and is difficult to clean. The temporary bonding glue for low-temperature bonding can be successfully bonded under low temperature conditions below 100°C, effectively avoiding the damage to the wafer structure caused by the traditional high-temperature bonding process. After completing the bonding task, the temporary bonding glue can be decomposed and dissolved in a weak alkaline aqueous solution to release the bond, and there is no residue after cleaning.

[0007] It should be noted that in the present invention, unless otherwise specified, the specific meaning of "including" related to compositional limitations and descriptions includes both the open-ended "including", "containing" and their similar meanings, and also the closed-ended "consisting of", "composed of" and their similar meanings.

[0008] To achieve the above object, the technical solution adopted by the present invention is: A temporary bonding adhesive for low-temperature bonding, comprising the following components in weight ratios:

[0009]

[0010] Further, the solvent is a water-soluble and volatile solvent.

[0011] Further, the solvent is one or more of isopropyl alcohol, propylene glycol methyl ether, ethanol, and ethylene glycol ethyl ether.

[0012] Further, the solvent is preferably propylene glycol methyl ether.

[0013] Further, the solvent is 40 - 60 parts.

[0014] Further, the deionized water is 10 - 20 parts.

[0015] Further, the self-crosslinking resin is an aqueous acrylic emulsion and / or an aqueous styrene-acrylic emulsion.

[0016] Further, the self-crosslinking resin is preferably an aqueous styrene-acrylic emulsion.

[0017] Further, the self-crosslinking resin can be directly obtained commercially. Preferably, it is one or more of Soluryl RX-20, Joncryl7690, KDD701, and YPWA-11W24.

[0018] Further, the self-crosslinking resin is preferably Soluryl RX-20.

[0019] Further, the self-crosslinking resin is 30 - 40 parts.

[0020] Further, the hydrophobic agent includes a macromolecular fluorinated hydrophobic agent and a small molecular hydrophobic agent.

[0021] Further, the hydrophobic agent includes a macromolecular fluorinated hydrophobic agent and a small molecular hydrophobic agent with a mass ratio of 5:1 - 20:1.

[0022] Further, the hydrophobic agent includes a macromolecular fluorinated hydrophobic agent and a small molecular hydrophobic agent with a preferably mass ratio of 10:1.

[0023] Further, the molecular weight of the macromolecular fluorinated hydrophobic agent is 5000 - 20000; and / or, the molecular weight of the small molecular hydrophobic agent is 200 - 1000.

[0024] Further, the macromolecular fluorinated hydrophobic agent is one or more of polyvinylidene fluoride, trifluoroethyl acrylate, and hexafluorobutyl acrylate.

[0025] Further, the macromolecular fluorinated hydrophobic agent is preferably polyvinylidene fluoride.

[0026] Further, the molecular weight of the polyvinylidene fluoride is 5000 - 20000.

[0027] Further, the molecular weight of the trifluoroethyl acrylate is 5000 - 20000.

[0028] Further, the molecular weight of the hexafluorobutyl acrylate is 5000 - 20000.

[0029] Further, the small molecular hydrophobic agent is one or more of triethanolamine oleate, dioleoyl glycerol, trioleoyl glycerol, and castor oil polyoxyethylene ether.

[0030] Further, the HLB value of the triethanolamine oleate is 12.

[0031] Further, the HLB value of the dioleoyl glycerol is 2.5 - 3.

[0032] Further, the HLB value of the trioleoyl glycerol is 8 - 12.

[0033] Further, the molecular weight of the castor oil polyoxyethylene ether is 200 - 1000.

[0034] Further, the castor oil polyoxyethylene ether can be directly obtained commercially. Preferably, it is, for example, castor oil polyoxyethylene ether EL - 10 and / or castor oil polyoxyethylene ether EL - 12.

[0035] Further, the small molecular hydrophobic agent is preferably castor oil polyoxyethylene ether EL - 10.

[0036] Further, the molecular weight of the castor oil polyoxyethylene ether EL - 10 is 720 - 746.

[0037] Further, the HLB value of the castor oil polyoxyethylene ether EL - 10 is 6 - 7.

[0038] Further, the molecular weight of the castor oil polyoxyethylene ether EL - 12 is 810 - 835.

[0039] Further, the HLB value of the castor oil polyoxyethylene ether EL - 12 is 6.5 - 7.5.

[0040] Further, the hydrophobic agent is 0.5 - 1 part.

[0041] The present invention uses a combination of a macromolecular fluorinated hydrophobic agent and a small - molecule hydrophobic agent as the hydrophobic agent, achieving a significant improvement in the hydrophobic property of the bonding adhesive surface. Specifically, the macromolecular fluorinated hydrophobic agent can adsorb and entangle on the bonding adhesive surface through steric hindrance, forming a loose hydrophobic adsorption layer. The hydrophobic small molecules of the small - molecule hydrophobic agent can effectively fill the voids in the macromolecular structure due to their smaller molecular size, forming a complementary structure that intertwines and combines with the macromolecules, reducing the void volume between molecules, making the entire adsorption layer more compact and uniform, and enhancing the water - resistance effect. At the same time, due to the low HLB value of the small - molecule hydrophobic agent, they can quickly adsorb on the bonding adhesive surface, rapidly reducing the surface tension of the bonding adhesive, having a defoaming and foam - inhibiting effect, avoiding the generation of foam during the use of the bonding adhesive, and thus ensuring the uniformity and consistency of the bonding process. Through the synergistic effect of the macromolecular and small - molecule hydrophobic agents, the present invention not only significantly improves the hydrophobic property and water - resistance effect of the bonding adhesive, but also has defoaming and foam - inhibiting functions, ensuring the stability and uniformity of the bonding process.

[0042] Further, the emulsifier is one or more of sodium dodecyl sulfate, sodium dodecyl diphenyl ether disulfonate, sodium dodecyl sulfonate, and sodium rosinate.

[0043] Further, the emulsifier is preferably sodium dodecyl sulfate.

[0044] Further, the emulsifier is 0.5 - 1 part.

[0045] The present invention uses a water - soluble ionic polymer as the emulsifier, and this polymer has multiple hydrophilic groups and charge characteristics. This ionic emulsifier can coat the surface of the self - crosslinking resin. Through steric hindrance effect and electrostatic interaction, it ensures that the self - crosslinking resin forms a uniform colloidal emulsion. Under the heating condition of 70 - 100 °C, it promotes the self - crosslinking reaction of the self - crosslinking resin to form a three - dimensional network structure, restricting the relative movement between the molecular chains of the material, thereby improving the hardness and strength of the bonding adhesive and forming a uniform bonding film. This bonding film can achieve the bonding of the thin wafer and the carrier, ensuring the bonding strength. At the same time, the crosslinked resin can undergo hydrolysis reaction and dissolve in an alkaline solution at 50 - 70 °C, realizing debonding under mild conditions.

[0046] Further, the leveling agent is a fluorine - modified acrylate.

[0047] Further, the molecular weight of the fluorine - modified acrylate is 5000 - 20000.

[0048] Further, the fluorine-modified acrylate preferably has a molecular weight of 5000-10000.

[0049] Further, the leveling agent can be directly obtained commercially. Preferably, it is one or more of fluorine-modified acrylate leveling agent LD-91084, fluorine-modified acrylate leveling agent SRE-3177-90, and fluorine-modified acrylate leveling agent LA-45.

[0050] Further, the leveling agent is fluorine-modified acrylate leveling agent LD-91084.

[0051] Further, the amount of the leveling agent is 0.1-0.5 parts.

[0052] Another object of the present invention also discloses a preparation method of a temporary bonding adhesive for low-temperature bonding, comprising the following steps:

[0053] Step (1): Stir deionized water, a solvent, an emulsifier, a leveling agent, and a self-crosslinking resin evenly.

[0054] Step (2): Add a water repellent to the mixture obtained in step (1) under high-speed dispersion stirring, and continue stirring under vacuum conditions until a uniform colloidal emulsion is formed to obtain a temporary bonding adhesive for low-temperature bonding.

[0055] Further, the stirring time in step (1) is 1-10 min.

[0056] Further, the rotation speed of the high-speed dispersion stirring in step (2) is 1000-2000 r / min.

[0057] Another object of the present invention also discloses an application of a temporary bonding adhesive for low-temperature bonding in the field of wafer temporary bonding.

[0058] Another object of the present invention also discloses a bonding / debonding method of a temporary bonding adhesive for low-temperature bonding, comprising the following steps:

[0059] Spin coating process:

[0060] Spin coat the temporary bonding adhesive for low-temperature bonding on a silicon wafer and bake it.

[0061] Bonding process:

[0062] Adhere the silicon wafer coated with the temporary bonding adhesive for low-temperature bonding to a sapphire carrier wafer at 70-100 °C, press it, and then cool it to room temperature to complete the bonding.

[0063] Debonding process:

[0064] The bonded pair after bonding is immersed in 3-5 wt.% ammonia water at 50-70 °C for 5-20 min until the bonded pair is separated, and debonding is completed. Unless otherwise specified, % in the present invention is the mass percentage content.

[0065] Furthermore, a method for bonding a temporary bonding adhesive with low-temperature bonding includes the following steps:

[0066] Spin coating process:

[0067] The temporary bonding adhesive with low-temperature bonding is spin-coated on a silicon wafer and baked.

[0068] Bonding process:

[0069] The silicon wafer coated with the temporary bonding adhesive with low-temperature bonding is adhered to a sapphire carrier at 70-100 °C, cooled to room temperature after pressing, and bonding is completed.

[0070] Furthermore, a method for debonding a temporary bonding adhesive with low-temperature bonding includes the following steps:

[0071] The bonded pair after bonding is immersed in 3-5 wt.% ammonia water at 50-70 °C for 5-20 min until the bonded pair is separated, and debonding is completed. Unless otherwise specified, % in the present invention is the mass percentage content.

[0072] Furthermore, in the spin coating process, the baking temperature is 90-120 °C and the baking time is 60-180 s.

[0073] Furthermore, in the spin coating process, the spin coating speed is 1000-2000 r / min.

[0074] Furthermore, in the spin coating process, the amount of glue dropped is 0.1-0.15 ml / cm 2 , for example, the amount of glue dropped for a 4-inch silicon wafer is 8-12 ml.

[0075] Furthermore, in the bonding process, the pressing pressure is 60-90 g / cm 2 , and the time is 30-60 s.

[0076] The temporary bonding adhesive with low-temperature bonding, preparation method, bonding and debonding methods of the present invention have the following advantages compared with the prior art:

[0077] 1) In the present invention, the surface of the self-crosslinking resin is coated with an ionic emulsifier. Under the action of steric hindrance and electrostatic force, the self-crosslinking resin is ensured to form a uniform colloidal emulsion. This uniformly dispersed property enables the bonding adhesive to form a uniform thin film during the coating process, avoiding local stress concentration. Under the heating condition of 70 - 100 °C, the self-crosslinking resin undergoes a self-crosslinking reaction to form a three-dimensional network structure. This structure restricts the relative movement between the molecular chains of the material, thereby improving the hardness and mechanical strength of the bonding adhesive, ensuring the bonding strength between the thin wafer and the carrier. At the same time, the crosslinked resin can undergo a hydrolysis reaction in an alkaline solution at 50 - 70 °C, and the three-dimensional network structure disintegrates, and the temporary bonding adhesive dissolves. This property enables the debonding process to be completed under mild conditions, avoiding damage to the wafer or the carrier.

[0078] 2) In the present invention, the hydrophobic agent and the fluorine-modified acrylate leveling agent cooperate, enabling the temporary bonding adhesive to quickly spread and level on the surface of the wafer device. During the baking of the temporary bonding adhesive and the heating-up process of bonding, the hydrophobic agent quickly adsorbs on the surface of the bonding adhesive and forms a hydrophobic protective film on the surface of the temporary bonding adhesive, preventing the corrosion of the glue layer by hydroxide ions in water during the bonding process, ensuring the chemical stability of the temporary bonding adhesive during the polishing process, and reducing the TTV of the glue layer after bonding. At the same time, the addition of the hydrophobic agent also reduces the surface energy of the temporary bonding adhesive, playing a role in defoaming and inhibiting bubbles, ensuring the stability and uniformity of the bonding process, and improving the quality of the temporary bonding adhesive.

[0079] 3) The water-based self-crosslinking resin adopted in the present invention contains a large number of carboxyl groups and ester groups in the self-crosslinking resin. Under alkaline conditions, the carboxyl group undergoes a neutralization reaction with the base to generate water-soluble carboxylate, and the ester group will undergo a hydrolysis reaction, resulting in the resin losing its crosslinked structure and swelling and dissolving. Therefore, this bonding adhesive can be cleaned thoroughly in an alkaline aqueous solution, reducing the environmental pollution problem of cleaning with organic solvents, and being more environmentally friendly and less toxic.

[0080] Therefore, the temporary bonding adhesive of the present invention has significant advantages in aspects such as low-temperature bonding, easy cleaning, environmental friendliness, and high precision, and can meet the requirements for high-performance temporary bonding materials in the fields of modern semiconductor manufacturing and microelectronic packaging. Its preparation method is simple, the cost is low, and the environmental protection performance is excellent. It has broad market application prospects and the potential for industrial promotion, and will provide strong support for the technological progress and sustainable development of the semiconductor and related industries. Description of the Drawings

[0081] Figure 1 It is a photo of a 4-inch silicon wafer after spin coating and drying, which is successfully bonded at 70 °C with the temporary bonding adhesive using Example 1 for low-temperature bonding;

[0082] Figure 2 It is a photo after debonding by soaking in a 3% ammonia aqueous solution at 50 °C in Example 1;

[0083] Figure 3 Photograph after debonding of Comparative Example 1 after immersion in 3% aqueous ammonia solution at 50 °C. Detailed implementation manners

[0084] Hereinafter, the present invention will be further described with reference to embodiments. The descriptions of the technical features recorded below are based on representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and specific examples. It should be noted that:

[0085] Unless otherwise specified, the units used in this specification are all international standard units, and the numerical values and numerical ranges appearing in the present invention should be understood to include the systematic errors inevitable in industrial production.

[0086] In this specification, the numerical range expressed as "numerical value A to numerical value B" means a range including the endpoint numerical values A and B.

[0087] In this specification, the numerical range expressed as "above" or "below" means a numerical range including the present number.

[0088] In this specification, the meaning expressed by "can" includes the meanings of both performing a certain process and not performing a certain process.

[0089] In this specification, the use of "optional" or "optional" means that certain substances, components, execution steps, applied conditions and other factors are used or not used.

[0090] In this specification, when "normal temperature" or "room temperature" is used, the temperature can be 15 - 25 °C.

[0091] In this specification, for the reagents or instruments whose manufacturers are not indicated, they are all conventional products that can be obtained through commercial purchase.

[0092] Examples 1 - 8

[0093] Examples 1 - 8 disclose a variety of temporary bonding adhesives for low-temperature bonding, and the components and weight ratios thereof are shown in Table 1. The preparation method is as follows: Add deionized water, solvent, emulsifier, leveling agent and self-crosslinking resin to a stirring kettle, stir for 5 min to mix evenly; under high-speed dispersion stirring at 2000 r / min, add a hydrophobic agent to the mixed solution, and turn on the vacuum pump, and continue to stir until a uniform colloidal emulsion is formed, completing the preparation of the temporary bonding adhesive for low-temperature bonding.

[0094] Table 1 Components and weight ratios of the temporary bonding adhesives for low-temperature bonding in Examples 1 - 8

[0095]

[0096]

[0097] Comparative Examples 1-6

[0098] Comparative Examples 1-6 disclose a variety of temporary bonding adhesives, and the components and weight ratios thereof are shown in Table 2. The preparation method is the same as that of Example 1.

[0099] Table 2 Components and Weight Ratios of the Temporary Bonding Adhesives in Comparative Examples 1-6

[0100]

[0101]

[0102] The temporary bonding adhesives of Examples 1-8 and Comparative Examples 1-6 were respectively tested, and the test methods and results are as follows:

[0103] Figure 1 This is a photo of the bonding adhesive with low-temperature bonding in Example 1 after spin coating and drying a 4-inch silicon wafer at 70°C. It can be seen that the surface is smooth and flawless, and the flatness is high. Figure 2 This is a photo of Example 1 after debonding by soaking in a 3% ammonia water solution at 50°C. It can be seen that the entire adhesive layer is completely dissolved and is easy to clean without residue. Figure 3 This is a photo of Comparative Example 1 after debonding by soaking in a 3% ammonia water solution at 50°C. It can be seen that the entire adhesive layer is partially dissolved and is difficult to clean thoroughly.

[0104] Performance Test

[0105] Taking a 4-inch silicon wafer as an example, the following verification was carried out using a temporary bonding adhesive:

[0106] Place the 4-inch silicon wafer in the inner cavity of a spin coater, set the rotation speed to 1000 r / min, the spin coating time to 20 s, and drip 5 ml of glue. Place the spin-coated silicon wafer in an oven at 100°C for 120 s for solvent evaporation. Take out the dried silicon wafer and set it aside;

[0107] Performance 1 TTV Measurement:

[0108] Perform TTV measurement on the dried silicon wafer above.

[0109] Performance 2 Bonding Temperature Test Method:

[0110] At 50°C, adhere the silicon wafer coated with glue to a sapphire carrier wafer, press it with a pressure of 90 g / cm 2 for 60 s, and then cool it to room temperature, and observe the quality after bonding. If there are bonding defects, continue to heat it to temperatures such as 60°C, 70°C, 80°C, 90°C, 100°C, etc. at a rate of 1°C / min, and record the temperature at which bonding is successful, which is the bonding temperature.

[0111] Performance 3 Cleaning Residue Test Method:

[0112] Place the dry silicon wafer in a 3% ammonia aqueous solution, soak and clean it at 50 °C for 10 min, and check whether the bonding glue on the silicon wafer is cleaned.

[0113] Performance 4 Storage test method;

[0114] Seal the prepared temporary bonding glue and place it at 25 °C for 30 days, observe the stability of the temporary bonding glue solution, and check whether there is turbidity or precipitation.

[0115] Performance 5 Post-bonding stability test method:

[0116] Use the temporary bonding glue for chip mounting experiment. Take the silicon wafer that has been spin-coated and baked to volatilize the solvent, adhere the glue layer to the surface of a sapphire carrier at 100 °C, and press it with a pressure of 90 g / cm 2 for 60 s, then cool it to room temperature, and then perform chemical mechanical polishing verification to observe whether there is any breakage on the polished silicon wafer.

[0117] Table 3 Test data

[0118]

[0119]

[0120] As can be seen from Table 3, the TTV values of the temporary bonding glues for low-temperature bonding in Examples 1-8 are all relatively low, ranging from 0.6 μm to 1.8 μm, indicating that the low-temperature bonding glue provided by the present invention can achieve high thickness uniformity after coating and is suitable for high-precision manufacturing processes. The TTV values of the temporary bonding glues in Comparative Examples 1-6 are relatively high, ranging from 2.7 μm to 10.8 μm, indicating that the bonding glue in the comparative examples has poor thickness uniformity after coating, which may affect the accuracy of subsequent processes and device performance.

[0121] There is no residue after debonding of the temporary bonding glues for low-temperature bonding in Examples 1-8, indicating that the bonding glue of the present invention can be completely decomposed in a weak alkaline aqueous solution, meeting the requirements of high cleanliness processes. There is residue after debonding of the temporary bonding glues in Comparative Examples 3 and 5, which may have an adverse impact on device performance or subsequent processes; although there is no residue for the temporary bonding glues in Comparative Examples 1-2, 4, and 6, their post-bonding stability is poor, which may cause thermal damage to the wafer or sensitive materials.

[0122] The bonding temperature range of the temporary bonding glues for low-temperature bonding in Examples 1-8 is between 70 °C and 100 °C. The low-temperature bonding effectively reduces the risk of thermal damage to the wafer and sensitive materials and is suitable for advanced processes and temperature-sensitive devices. Comparative Example 5 uses polyacrylic resin S-60, resulting in a higher bonding temperature of the temporary bonding glue, which may cause wafer deformation, material property degradation, or device failure.

[0123] It can be seen that compared with the temporary bonding adhesives of the comparative examples, the temporary bonding adhesives of Examples 1-8 have significant advantages in terms of bonding temperature, thickness uniformity, and debonding performance, and are particularly suitable for high-precision advanced manufacturing processes.

[0124] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A temporary bonding adhesive for low temperature bonding, characterized in that: The composition includes the following components in weight ratio:

2. The temporary bonding adhesive for low temperature bonding according to claim 1, characterized in that: The solvent is one or more of isopropyl alcohol, propylene glycol methyl ether, ethanol and ethylene glycol ethyl ether; And / or, the self-crosslinking resin is an aqueous acrylic emulsion and / or an aqueous styrene acrylic emulsion; And / or, the hydrophobic agent includes a macromolecular fluorine-containing hydrophobic agent and a small molecule hydrophobic agent; and / or, the emulsifier is one or more of sodium lauryl sulfate, sodium dodecyl diphenyl ether disulfonate, sodium dodecyl sulfonate and sodium rosin acid; And / or, the leveling agent is fluorine-modified acrylate.

3. The temporary bonding adhesive for low temperature bonding according to claim 2, characterized in that: The hydrophobic agent comprises a macromolecular fluorine-containing hydrophobic agent and a small molecule hydrophobic agent in a mass ratio of 5:1-20:

1.

4. The temporary bonding adhesive for low temperature bonding according to claim 2, characterized in that: The molecular weight of the macromolecular fluorine-containing hydrophobic agent is 5000-20000; and / or the molecular weight of the small molecule hydrophobic agent is 200-1000.

5. The temporary bonding adhesive for low temperature bonding according to claim 2, characterized in that: The macromolecular fluorine-containing hydrophobic agent is one or more of polyvinylidene fluoride, polytrifluoroethyl acrylate and polyhexafluorobutyl acrylate.

6. The temporary bonding adhesive for low temperature bonding according to claim 2, characterized in that: The small molecule hydrophobic agent is one or more of triethanolamine oleic acid soap, dioleyl glyceryl, trioleyl glyceryl and castor oil polyoxyethylene ether.

7. A method for preparing a temporary bonding adhesive for low temperature bonding according to any one of claims 1 to 6, characterized in that: The following steps are involved: Step (1): stir deionized water, solvent, emulsifier, leveling agent and self-crosslinking resin uniformly; Step (2): Add a hydrophobic agent to the solution obtained in step (1) under high-speed dispersing stirring, and continue stirring under vacuum conditions until a uniform colloidal emulsion is formed to obtain a temporary bonding adhesive for low-temperature bonding.

8. Use of the temporary bonding adhesive for low temperature bonding according to any one of claims 1 to 6 in the field of temporary wafer bonding.

9. A temporary bonding adhesive bonding and debonding method for low temperature bonding according to any one of claims 1 to 6, characterized in that: The steps include: Spin coating process: Spin-coat a temporary bonding adhesive for low-temperature bonding on a silicon wafer and bake it; Bonding process: The silicon wafer coated with temporary bonding glue for low-temperature bonding is adhered to the sapphire carrier at 70-100°C, pressed and cooled to room temperature to complete the bonding; Debonding process: The bonded pair is placed in 3-5 wt.% ammonia water at 50-70° C. and immersed therein until the bonded pair is separated, thus completing the debonding.

10. The temporary bonding adhesive bonding / debonding method for low temperature bonding according to claim 9, characterized in that: The baking temperature in the spin coating process is 90-120° C. and the baking time is 60-180 s; And / or, the spin coating speed in the spin coating process is 1000-2000 r / min; And / or, the amount of glue dripped in the spin coating process is 0.1-0.15 ml / cm 2 ; And / or, the pressing pressure in the bonding process is 60-90 g / cm 2 , time is 30-60s.

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