Double-channel self-calibration electrostatic measurement device on wafer developing equipment and method of double-channel self-calibration electrostatic measurement device

Abstract

The invention relates to the technical field of integrated circuits, in particular to a two-way self-calibration electrostatic measurement device on wafer developing equipment and a method thereof.The two-way self-calibration electrostatic measurement device comprises a ground resistance detection module, a wafer surface electrostatic monitoring module, a two-way self-calibration module and a control and display unit, and the ground resistance detection module is used for being connected with the wafer developing equipment; the wafer surface static electricity monitoring module is electrically connected with the grounding resistance detection module, the double-path self-calibration module is electrically connected with the wafer surface static electricity monitoring module, and the control and display unit is electrically connected with the grounding resistance detection module, the wafer surface static electricity monitoring module and the double-path self-calibration module. According to the invention, the accuracy of measurement and the stability of the system are improved, the maintenance and adjustment processes are optimized, and the overall performance is finally improved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit technology, and more particularly, to a dual-channel self-calibrating electrostatic measurement device and method on a wafer developing device. Background Art

[0002] In the field of semiconductor manufacturing, especially during the wafer manufacturing process, the generation and accumulation of static electricity are common problems. Static electricity not only affects the quality and performance of wafers, but may also damage production equipment and even cause safety accidents. Therefore, effective monitoring and management of static electricity are crucial. Traditional static electricity measurement methods usually rely on a single measurement channel. Although this method is simple, it is easily affected by environmental factors, resulting in inaccurate measurement results. Summary of the Invention

[0003] In view of this, the present invention aims at the deficiencies of the prior art and provides a dual-channel self-calibrating electrostatic measurement device and method on a wafer developing device, aiming to solve at least one of the problems raised in the above background art.

[0004] In a first aspect, the present invention provides a dual-channel self-calibrating electrostatic measurement device on a wafer developing device, comprising: a ground resistance detection module for connecting to the wafer developing device;

[0005] a wafer surface static electricity monitoring module disposed inside the wafer developing device and electrically connected to the ground resistance detection module;

[0006] a dual-channel self-calibrating module electrically connected to the wafer surface static electricity monitoring module for calibrating the measurement circuit;

[0007] a control and display unit electrically connected to the ground resistance detection module, the wafer surface static electricity monitoring module, and the dual-channel self-calibrating module for displaying the ground resistance status, the static voltage value, and the calibration status information, and issuing an alarm when the grounding is poor or the static electricity exceeds the standard.

[0008] In some embodiments, the ground resistance detection module comprises:

[0009] a ground resistance sensor, one end of which is electrically connected to the ground point of the wafer developing device;

[0010] a data processing unit electrically connected to the other end of the ground resistance sensor.

[0011] In some embodiments, the data processing unit is electrically connected to the other end of the ground resistance sensor through an analog-to-digital converter.

[0012] In some embodiments, the wafer surface static electricity monitoring module includes:

[0013] A static electricity sensor, the output end of the static electricity sensor is electrically connected to the data processing unit, and the static electricity sensor is used to monitor the static electricity voltage on the wafer surface in real time;

[0014] An ion generator, the ion generator is electrically connected to the data processing unit, and the data processing unit controls the ion generator to release ions to neutralize static electricity according to the data of the static electricity sensor.

[0015] In some embodiments, the dual-channel self-calibration module includes:

[0016] A multiplexer, the output end of the multiplexer is electrically connected to a plurality of measurement circuits;

[0017] A resistor, one end of the resistor is electrically connected to the input end of the multiplexer, and the other end of the resistor is grounded;

[0018] A standard control unit, the control end of the standard control unit is electrically connected to the multiplexer.

[0019] In some embodiments, the resistor is a standard resistor with a known resistance value.

[0020] In some embodiments, the control and display unit includes:

[0021] A microcontroller, the microcontroller is electrically connected to the standard control unit and the data processing unit through an I2C / SPI interface;

[0022] A display screen, the display screen is electrically connected to the microcontroller through an I2C / SPI interface.

[0023] In some embodiments, the control and display unit further includes an alarm system, the control end of the alarm system is electrically connected to the microcontroller, and the output end of the alarm system is electrically connected to a buzzer.

[0024] In a second aspect, the present invention provides a dual-channel self-calibration static electricity measurement method on a wafer developing device, including the following steps:

[0025] S1. Calibrate the static electricity measurement device;

[0026] S2. Connect the ground resistance sensor to the ground point of the developing device, use the microcontroller to read the value of the ground resistance sensor, and determine whether the grounding state is good. When the ground resistance exceeds the preset safety range, the alarm system will be triggered to prompt the operator to check the grounding;

[0027] S3. During the wafer development process, start the electrostatic sensor to continuously monitor the electrostatic voltage on the wafer surface. The microcontroller continuously collects the data of the electrostatic sensor and evaluates the electrostatic change trend on the wafer surface by comparing the electrostatic voltage values at different time points;

[0028] S4. According to the preset electrostatic threshold, determine whether the electrostatic level on the wafer surface is too high. When the electrostatic level exceeds the threshold, the microcontroller will control the ion generator to start and release ions to neutralize the electrostatic charge on the wafer surface. The working time and intensity of the ion generator are adjusted according to the level of the electrostatic charge;

[0029] S5. Record the detection data, which includes: ground resistance value, electrostatic voltage value, and start time of the ion generator, and analyze the recorded detection data through data analysis software.

[0030] In some embodiments, the electrostatic measurement device in step S1 includes: a ground resistance sensor, an electrostatic sensor, an ion generator, and a multiplexer.

[0031] Compared with the prior art, the beneficial effects of the present invention are as follows: By introducing two precision resistors with known resistance values, the measurement deviation caused by systematic errors can be effectively reduced, thereby improving the overall measurement accuracy. The dual-channel self-calibrating electrostatic measurement device can achieve real-time monitoring and precise control of static electricity, ensuring that the static electricity state on the wafer surface always remains at the optimal level. All monitoring data, including the ground resistance value, static voltage value, etc., will be recorded and stored. The data analysis software can process these data to generate reports to help optimize the development process. The dual-channel self-calibrating electrostatic measurement device adopts a redundant design. When one channel fails, the other channel can be used as a backup to ensure the continuity and accuracy of the measurement. The calibration process of the multiplexer can be automated, reducing the need for human intervention and improving the reliability and stability of the system. Calibration and comparison under different environmental conditions can improve the reliability and stability of the measurement and adapt to various complex production environments. Regular inspection and maintenance of the electrostatic measurement device and the ion generator to ensure their normal operation simplifies the maintenance process. According to the actual production situation and data analysis results, the ground resistance threshold, static electricity threshold, and the working parameters of the ion generator are adjusted in a timely manner, improving the flexibility and adaptability of the system. When the ground resistance exceeds the preset safety range, the system will trigger an alarm to prompt the operator to check the grounding and handle potential problems in a timely manner. By precisely controlling the static electricity level, interruptions and failures during the production process can be reduced, and the production efficiency can be improved. Optimize the development process, reduce the scrap rate caused by static electricity problems, and thus reduce the production cost.

[0032] The above general description and the following detailed description are merely exemplary and explanatory, and do not limit the present disclosure.

[0033] Other features and aspects of the present disclosure will become clearer based on the following detailed description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0035] Figure 1 It is a structural block diagram of a dual-channel self-calibrating electrostatic measurement device and its method provided for an embodiment of the present invention on a wafer developing device. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0037] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.

[0038] The terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "plurality" is two or more.

[0039] In the description of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "mounted", "connected" and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0040] As described in the background art, in the field of semiconductor manufacturing, especially in the process of wafer manufacturing, the generation and accumulation of static electricity are common problems. Static electricity not only affects the quality and performance of wafers, but may also damage production equipment and even cause safety accidents. Therefore, effective monitoring and management of static electricity are crucial. Traditional static electricity measurement methods usually rely on a single measurement channel. Although this method is simple, it is easily affected by environmental factors, resulting in inaccurate measurement results.

[0041] To address the above issues, a dual-channel self-calibrating electrostatic measurement device and method on a wafer development device proposed in this application can effectively reduce measurement deviations caused by systematic errors by introducing two precision resistors with known resistance values, thereby improving the overall measurement accuracy. The dual-channel self-calibrating electrostatic measurement device can achieve real-time monitoring and precise control of static electricity, ensuring that the static electricity state on the wafer surface always remains at the optimal level. All monitoring data, including the ground resistance value, static voltage value, etc., will be recorded and stored. The data analysis software can process these data to generate reports to help optimize the development process. The dual-channel self-calibrating electrostatic measurement device adopts a redundant design. When one channel malfunctions, the other channel can serve as a backup to ensure the continuity and accuracy of measurement. The calibration process of the multiplexer can be automated, reducing the need for human intervention and improving the reliability and stability of the system. Calibrating and comparing under different environmental conditions can improve the reliability and stability of measurement and adapt to various complex production environments. Regularly checking and maintaining the electrostatic measurement device and the ion generator to ensure their normal operation simplifies the maintenance process. Adjusting the ground resistance threshold, static electricity threshold, and the operating parameters of the ion generator in a timely manner according to the actual production situation and data analysis results improves the flexibility and adaptability of the system. When the ground resistance exceeds the preset safety range, the system will trigger an alarm to prompt the operator to check the grounding and handle potential problems in a timely manner. By precisely controlling the static electricity level, production interruptions and failures during the production process can be reduced, and production efficiency can be improved. Optimizing the development process and reducing the scrap rate caused by static electricity problems can thus reduce production costs.

[0042] Refer to Figure 1 As shown in the following, the first embodiment:

[0043] A dual-channel self-calibrating electrostatic measurement device on a wafer development device according to an embodiment of the present application includes:

[0044] A ground resistance detection module, which is used to connect to the wafer development device;

[0045] A wafer surface static electricity monitoring module, which is arranged inside the wafer development device, and is electrically connected between the wafer surface static electricity monitoring module and the ground resistance detection module;

[0046] A dual-channel self-calibrating module, which is electrically connected between the dual-channel self-calibrating module and the wafer surface static electricity monitoring module, and is used to calibrate the measurement circuit;

[0047] A control and display unit, which is electrically connected to the grounding resistance detection module, the wafer surface static electricity monitoring module, and the dual-channel self-calibration module. The control and display unit is used to display the grounding resistance status, static voltage value, and calibration status information, and issue an alarm when the grounding is poor or the static electricity exceeds the standard.

[0048] It should be understood that the main function of the grounding resistance detection module is to detect the grounding resistance of the wafer developing equipment. Since the magnitude of the grounding resistance directly affects the safety and stability of the equipment, it is crucial to monitor the grounding resistance in real time. By connecting to the wafer developing equipment, this module can accurately measure and feedback the status of the grounding resistance to ensure that the equipment operates under safe grounding conditions. The wafer surface static electricity monitoring module is set inside the wafer developing equipment and directly monitors the static electricity on the wafer surface. This module forms a closed-loop monitoring system through electrical connection to the grounding resistance detection module, and can capture and record the static electricity changes on the wafer surface in real time, which is of great significance for preventing static electricity from damaging the wafer and improving product quality. The dual-channel self-calibration module is the core part of the entire system and is responsible for calibrating the measurement circuit to ensure the accuracy of the measurement. Through the electrical connection with the wafer surface static electricity monitoring module, the dual-channel self-calibration module can compare and correct the measurement data in real time to eliminate errors. This self-calibration mechanism greatly improves the reliability and measurement accuracy of the system. As the human-machine interaction interface, the control and display unit provides intuitive operation and display functions. It can not only display key information such as the grounding resistance status and static voltage value, but also issue an alarm when the grounding is poor or the static electricity exceeds the standard to remind the operator to take measures in time. In addition, this unit may also have some advanced functions such as data storage and historical record query for more in-depth analysis and optimization. This dual-channel self-calibration static electricity measurement device realizes the comprehensive monitoring and precise control of the static electricity of the wafer developing equipment by integrating multiple functional modules. It not only improves the safety and stability of the equipment, but also helps to improve product quality and production efficiency. The measurement circuit refers to the circuit system used to detect and monitor the static voltage on the wafer surface. The measurement circuit usually includes a static electricity sensor, a signal processing unit, and an interface part with the control and display unit.

[0049] In some specific embodiments, the grounding resistance detection module includes:

[0050] A grounding resistance sensor, one end of which is electrically connected to the grounding point of the wafer developing equipment;

[0051] A data processing unit, which is electrically connected to the other end of the grounding resistance sensor.

[0052] It should be understood that the grounding resistance detection module can accurately measure the grounding resistance of the wafer developing equipment through a high-precision sensor. This high-precision measurement helps to promptly detect grounding problems and ensure that the equipment operates in the best condition. This module has a real-time monitoring function and can continuously track changes in the grounding resistance. Once an abnormal situation is detected, the system will immediately issue an alarm to prevent electrostatic accumulation and equipment damage caused by poor grounding. The grounding resistance detection module can not only monitor in real time but also record historical data and perform analysis. By reviewing long-term data, potential trends and problems can be identified to optimize the maintenance strategy. When the grounding resistance exceeds the safe range or shows abnormal fluctuations, the detection module will automatically trigger the alarm mechanism. This timely warning function helps operators quickly take measures to avoid equipment failures and production interruptions.

[0053] In some specific embodiments, the data processing unit is electrically connected to the other end of the grounding resistance sensor through an analog-to-digital converter.

[0054] It should be understood that through the analog-to-digital converter, the analog signal of the grounding resistance sensor is converted into a digital signal, thereby improving the measurement accuracy and stability. This high-precision measurement can more accurately reflect the actual state of the grounding resistance and helps to promptly detect potential problems. The high-speed conversion performance of the analog-to-digital converter enables the system to quickly respond to changes in the grounding resistance. This rapid response ability is crucial for the real-time monitoring and warning mechanism and helps to quickly take measures when problems occur to avoid equipment damage.

[0055] In some specific embodiments, the wafer surface static electricity monitoring module includes:

[0056] A static electricity sensor, the output end of the static electricity sensor is electrically connected to the data processing unit, and the static electricity sensor is used to monitor the static electricity voltage on the wafer surface in real time;

[0057] An ion generator, the ion generator is electrically connected to the data processing unit, and the data processing unit controls the ion generator to release ions to neutralize static electricity according to the data of the static electricity sensor.

[0058] It should be understood that the electrostatic monitoring module on the wafer surface monitors the electrostatic voltage on the wafer surface in real time through an electrostatic sensor. This real-time monitoring can promptly detect the accumulation of static electricity, preventing wafer damage or production interruption caused by static electricity. The data processing unit controls the ion generator to release ions to neutralize the static electricity according to the data from the electrostatic sensor. This automated electrostatic neutralization mechanism improves production efficiency, reduces the need for manual intervention, and ensures the stability and reliability of the production process. By effectively monitoring and controlling the static electricity on the wafer surface, the adsorption of dust particles can be reduced, the defect density can be lowered, thereby improving the yield and overall quality of the chips. This is particularly important for semiconductor manufacturing with high-precision requirements. Traditional mechanical chucks and vacuum chucks may cause mechanical damage to the wafer during the clamping process. The electrostatic monitoring module avoids mechanical friction through uniform adsorption force, extends the service life of the wafer, and improves the processing efficiency and precision.

[0059] In some specific embodiments, the dual-channel self-calibration module includes:

[0060] A multiplexer, the output terminal of the multiplexer is electrically connected to a plurality of measurement circuits;

[0061] A resistor, one end of the resistor is electrically connected to the input terminal of the multiplexer, and the other end of the resistor is grounded;

[0062] A standard control unit, the control terminal of the standard control unit is electrically connected to the multiplexer.

[0063] It should be understood that the dual-channel self-calibration module can automatically calibrate a plurality of measurement circuits through the multiplexer and the standard control unit. This design reduces manual intervention, improves the accuracy and consistency of measurement, and ensures the accuracy of each measurement result. The self-calibration function can automatically detect and compensate for errors in the measurement circuit, reducing the need for regular calibration. This not only simplifies the maintenance work of the system but also reduces measurement deviations caused by human operation errors, improving the stability of the system.

[0064] Two precision resistors with known resistance values are used to calibrate the measurement circuit. One end is connected to the input terminal of the multiplexer, and the other end is grounded. The multiplexer switches different resistance paths to achieve dual-channel calibration. The input terminal is connected to the standard resistor, the output terminal is connected to the measurement circuit, and the control terminal is controlled by the calibration control unit. The calibration control unit is used to control the multiplexer and adjust the measurement circuit according to the value of the standard resistor to ensure measurement accuracy. It communicates with the microcontroller through the I2C / SPI interface, and the control terminal is connected to the multiplexer.

[0065] In some specific embodiments, the resistor is a standard resistor with a known resistance value.

[0066] In some specific embodiments, the control and display unit includes:

[0067] A microcontroller, which is electrically connected to the standard control unit and the data processing unit through an I2C / SPI interface;

[0068] A display screen, which is electrically connected to the microcontroller through an I2C / SPI interface.

[0069] In some specific embodiments, the control and display unit further includes an alarm system. The control end of the alarm system is electrically connected to the microcontroller, and the output end of the alarm system is electrically connected to a buzzer.

[0070] It should be understood that the control and display unit realizes the integrated management of the entire system through the microcontroller. This design simplifies the system architecture, improves the efficiency of data processing and transmission, and makes the operation more convenient. The display screen is electrically connected to the microcontroller through an I2C / SPI interface, and can display key information such as the grounding resistance status and the static voltage value in real time. This intuitive display method helps the operator quickly understand the system status and make adjustments in a timely manner. The control and display unit also includes an alarm system. When poor grounding or excessive static electricity is detected, the microcontroller will trigger the alarm system and emit an alarm sound through the buzzer. This flexible alarm mechanism can timely remind the operator to take measures to ensure the safe operation of the equipment. The design of the control and display unit takes into account future expansion requirements. Through standardized interfaces (such as I2C / SPI), new function modules can be easily added or existing modules can be upgraded, reducing the maintenance cost and complexity of the system.

[0071] Second Embodiment

[0072] A dual-channel self-calibrating electrostatic measurement method on a wafer developing device according to an embodiment of the present application includes the following steps:

[0073] S1. Calibrate the electrostatic measurement device;

[0074] S2. Connect the grounding resistance sensor to the grounding point of the developing device, use the microcontroller to read the value of the grounding resistance sensor, and judge whether the grounding state is good. When the grounding resistance exceeds the preset safety range, the alarm system will be triggered to prompt the operator to check the grounding;

[0075] S3. During the wafer developing process, start the electrostatic sensor to start real-time monitoring of the static voltage on the wafer surface. The microcontroller continuously collects data from the electrostatic sensor and evaluates the static electricity change trend on the wafer surface by comparing the static voltage values at different time points;

[0076] S4. Determine whether the static electricity level on the wafer surface is too high according to a preset static electricity threshold. When the static electricity level exceeds the threshold, the microcontroller will control the ion generator to start and release ions to neutralize the static electricity charges on the wafer surface. The working time and intensity of the ion generator are adjusted according to the level of static electricity.

[0077] S5. Record the detection data, where the detection data includes: the grounding resistance value, the static electricity voltage value, and the start time of the ion generator, and analyze the recorded detection data through data analysis software.

[0078] In some specific embodiments, the static electricity measuring device in step S1 includes: a grounding resistance sensor, a static electricity sensor, an ion generator, and a multiplexer.

[0079] Workflow: The grounding resistance sensor continuously monitors the grounding resistance of the developing device. The data processing unit periodically reads the sensor data and compares it with a preset safety value. If the grounding resistance exceeds the safe range, the alarm system will be triggered to prompt the operator to check the grounding. The static electricity sensor real-time monitors the static electricity voltage on the wafer surface. When the static electricity voltage exceeds the set threshold, the ion generator starts to release ions to neutralize the static electricity. After the static electricity voltage drops to the safe range, the ion generator stops working. The calibration control unit periodically switches the multiplexer to connect a standard resistor to the measurement circuit. Adjust the measurement circuit according to the value of the standard resistor to ensure the measurement accuracy. After calibration, restore the normal static electricity monitoring mode. All monitoring data (including grounding resistance, static electricity voltage, calibration status, etc.) are recorded and stored. The data analysis software can process these data to generate reports to help optimize the developing process.

[0080] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims

1. A dual-path self-calibration electrostatic measurement device on a wafer developing device, characterized in that: include: A ground resistance detection module, wherein the ground resistance detection module is used to be connected to a wafer developing device; A wafer surface electrostatic monitoring module, wherein the wafer surface electrostatic monitoring module is disposed inside the wafer developing device, and the wafer surface electrostatic monitoring module is electrically connected to the ground resistance detection module; A dual-path self-calibration module, the dual-path self-calibration module is electrically connected to the wafer surface electrostatic monitoring module, and the dual-path self-calibration module is used to calibrate the measurement circuit; A control and display unit, wherein the control and display unit is electrically connected to the ground resistance detection module, the wafer surface electrostatic monitoring module, and the dual-channel self-calibration module, and the control and display unit is used to display the ground resistance status, electrostatic voltage value, and calibration status information, and to issue an alarm when the grounding is poor or the static electricity exceeds the standard.

2. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 1, characterized in that: The ground resistance detection module comprises: A grounding resistance sensor, one end of which is electrically connected to a grounding point of a wafer developing device; A data processing unit is electrically connected to the other end of the ground resistance sensor.

3. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 2, characterized in that: The data processing unit is electrically connected to the other end of the ground resistance sensor through an analog-digital converter.

4. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 3, characterized in that: The wafer surface electrostatic monitoring module comprises: An electrostatic sensor, the output end of which is electrically connected to the data processing unit, and the electrostatic sensor is used to monitor the electrostatic voltage on the surface of the wafer in real time; An ion generator is electrically connected to the data processing unit, and the data processing unit controls the ion generator to release ions to neutralize static electricity according to data from the electrostatic sensor.

5. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 4, characterized in that: The dual-path self-calibration module comprises: a multiplexer, wherein an output end of the multiplexer is electrically connected to a plurality of measurement circuits; a resistor, one end of which is electrically connected to the input end of the multiplexer, and the other end of which is grounded; A standard control unit, wherein a control end of the standard control unit is electrically connected to the multiplexer.

6. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 5, characterized in that: The resistor is a standard resistor with a known resistance.

7. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 5, characterized in that: The control and display unit comprises: A microcontroller, wherein the microcontroller is electrically connected to the standard control unit and the data processing unit via an I2C / SPI interface; A display screen is electrically connected to the microcontroller via an I2C / SPI interface.

8. A dual-path self-calibration electrostatic measurement device on a wafer developing device according to claim 7, characterized in that: The control and display unit also includes an alarm system, a control end of the alarm system is electrically connected to the microcontroller, and an output end of the alarm system is electrically connected to a buzzer.

9. A dual-path self-calibration electrostatic measurement method on a wafer developing device, characterized in that: A dual-path self-calibration electrostatic measurement device on a wafer developing device as claimed in any one of claims 1 to 8 comprises the following steps: S1. Calibrate the electrostatic measuring device; S2, connect the grounding resistance sensor to the grounding point of the developing equipment, use the microcontroller to read the value of the grounding resistance sensor, and judge whether the grounding state is good. When the grounding resistance exceeds the preset safety range, the alarm system will be triggered to prompt the operator to check the grounding; S3. During the wafer development process, the electrostatic sensor is started to monitor the electrostatic voltage on the wafer surface in real time. The microcontroller continuously collects data from the electrostatic sensor and evaluates the electrostatic change trend on the wafer surface by comparing the electrostatic voltage values ​​at different time points. S4. According to a preset static electricity threshold, determine whether the static electricity level on the wafer surface is too high. When the static electricity level exceeds the threshold, the microcontroller controls the ion generator to start and release ions to neutralize the static electricity charge on the wafer surface. The working time and intensity of the ion generator are adjusted according to the static electricity level. S5. Record the test data, which include ground resistance value, electrostatic voltage value, and start-up time of the ion generator. Analyze the recorded test data using data analysis software.

10. A dual-path self-calibration electrostatic measurement method on a wafer developing device according to claim 9, characterized in that: The electrostatic measuring device in step S1 includes: a ground resistance sensor, an electrostatic sensor, an ion generator, and a multiplexer.

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