Display device

Abstract

The invention relates to a display device which comprises at least two display panels arranged in a spliced mode, a splicing seam is formed between every two adjacent display panels, each display panel comprises a first light-emitting area close to the splicing seam and a second light-emitting area relatively far away from the splicing seam, the first light-emitting areas are provided with first light-emitting devices arranged in an array mode, and the second light-emitting areas are provided with second light-emitting devices arranged in an array mode. The second light-emitting area is provided with second light-emitting devices arranged in an array mode, and the light emitting intensity of the first light-emitting devices is larger than that of the second light-emitting devices. The light emitting intensity of the first light emitting device close to the splicing seam is larger than the light emitting intensity of the second light emitting device away from the splicing seam, so that dark lines at the splicing position are made up, and the effect that the brightness of the splicing area and the brightness of the second light emitting area are uniform and consistent is achieved.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and particularly to a display device. Background Art

[0002] Micro Light Emitting Diode (Micro LED) has attracted increasing attention due to its technical advantages of high brightness, high transmittance, and high contrast. However, compared with Liquid Crystal Display (LCD) and Organic Light-Emitting Diode (OLED) technologies, due to the characteristic problems of the Light Emitting Diode (LED) chip efficiency of Micro LED, a relatively high current is required for driving to achieve a relatively high brightness. Due to the limitations of the backplane power consumption and brightness uniformity, the single-screen size of the Micro LED display cannot be designed to be relatively large. Therefore, a splicing method needs to be adopted when making a large-screen display. However, due to the limitations of the perpendicularity of the glass edge and the edging parameters during the splicing of glasses, seams will be generated during the splicing process, and dark lines are likely to appear at the splicing position of the large-screen display, which is likely to affect the high-quality display effect.

[0003] In response to the above problems, the solutions commonly adopted in the industry currently are to fill glue at the seam position for curing, or to adopt a design of reducing the pixel pitch (pitch) of the edge chips; however, since the glue filling solution has a complex process and will affect the flatness of the seam position, thereby affecting the display effect, it has not been widely adopted for the time being; and for high-resolution Micro LEDs, due to the complexity of the driving circuit and the related design of the pixel layout (layout), the reduction distance of the splicing edge chips is limited in the case of a small pitch design, so the problem of splicing dark lines cannot be significantly improved either. Summary of the Invention

[0004] The present application provides a display device, which can effectively improve the problem of dark lines at the splicing position of the display device and enhance the display effect.

[0005] To achieve the above object, the present application provides a display device, including:

[0006] At least two display panels arranged in a splicing manner, and there is a seam between two adjacent display panels;

[0007] Among them, the display panel includes a first light-emitting region disposed adjacent to the seam, and a second light-emitting region relatively far from the seam. The first light-emitting region is provided with first light-emitting devices arranged in an array, and the second light-emitting region is provided with second light-emitting devices arranged in an array. The light-emitting intensity of the first light-emitting devices is greater than that of the second light-emitting devices.

[0008] In some embodiments, the width of the seam is L, and L = [(I 1 / I 2 ) 1 / 2 -1]P 1 ;

[0009] Among them, I 1 represents the light-emitting intensity of the first light-emitting devices, I 2 represents the light-emitting intensity of the second light-emitting devices, and P 1 represents the distance between adjacent second light-emitting devices.

[0010] In some embodiments, the distance between the first light-emitting devices and the seam is P 1 / 2.

[0011] In some embodiments, the first light-emitting devices include first light-emitting chips, and the second light-emitting devices include second light-emitting chips;

[0012] The first light-emitting chips and the second light-emitting chips are selected from a first stacked chip, a second stacked chip, a third stacked chip, and a fourth stacked chip. Among them, the light-emitting intensity of the first stacked chip, the light-emitting intensity of the second stacked chip, the light-emitting intensity of the third stacked chip, and the light-emitting intensity of the fourth stacked chip increase in sequence.

[0013] In some embodiments, the display panel further includes a driving substrate, and the first stacked chip, the second stacked chip, the third stacked chip, and the fourth stacked chip are disposed above the driving substrate;

[0014] One side of the first stacked chip away from the driving substrate is set as a flat surface, one side of the second stacked chip away from the driving substrate is provided with a patterned structure, one side of the third stacked chip away from the driving substrate is set as a rough surface, and one side of the fourth stacked chip away from the driving substrate is provided with a patterned structure and is set as a rough surface.

[0015] In some embodiments, the first light-emitting chips are selected from the fourth stacked chip, and the second light-emitting chips are selected from the first stacked chip, the second stacked chip, and the third stacked chip.

[0016] In some embodiments, the first light-emitting chip is selected from the third stacked chip, and the second light-emitting chip is selected from the first stacked chip and the second stacked chip.

[0017] In some embodiments, the first light-emitting chip is selected from the second stacked chip, and the second light-emitting chip is selected from the first stacked chip.

[0018] In some embodiments, the first stacked chip, the second stacked chip, the third stacked chip, and the fourth stacked chip have the same height in the thickness direction of the driving substrate.

[0019] In some embodiments, the first light-emitting device further includes a first microlens on a side of the first light-emitting chip away from the driving substrate, and the second light-emitting device further includes a second microlens on a side of the second light-emitting chip away from the driving substrate.

[0020] The present application provides a display device. By making the light-emitting intensity of the first light-emitting device in the first light-emitting area close to the seam greater than that of the second light-emitting device in the second light-emitting area far from the seam, the dark line at the splicing position is compensated, so as to achieve the effect that the brightness of the splicing area is uniform with that of the second light-emitting area. Compared with the current scheme of filling glue at the seam position, the display device of the present application is simpler in the process, and does not need to add process steps such as refractive glue filling and planarization; compared with the current scheme of pitch shrinking of edge chips, the display device of the present application has more advantages in the design of small pitch and high-resolution display products. Therefore, the display device of the present application can effectively improve the dark line problem at the splicing position, achieve the effect of uniform overall display brightness, is beneficial to improving the display quality, has a simple process, and is applicable to small pitch and high-resolution display products at the same time. Description of the Drawings

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0022] In order to more completely understand the present application and its beneficial effects, the following will be described in conjunction with the drawings, where the same reference numerals in the following description represent the same parts.

[0023] Figure 1 It is a top view of a display device provided by an embodiment of the present application;

[0024] Figure 2It is a cross-sectional view of a display device provided by an embodiment of the present application;

[0025] Figure 3 It is a cross-sectional view of a first stacked chip of a display device provided by an embodiment of the present application;

[0026] Figure 4 It is a cross-sectional view of a second stacked chip of a display device provided by an embodiment of the present application;

[0027] Figure 5 It is a cross-sectional view of a third stacked chip of a display device provided by an embodiment of the present application;

[0028] Figure 6 It is a cross-sectional view of a fourth stacked chip of a display device provided by an embodiment of the present application;

[0029] Figure 7 It is a cross-sectional view of another display device provided by an embodiment of the present application.

[0030] Description of reference numerals:

[0031] 10. Display device; 100. Display panel; 101. Seam; 102. Driving substrate; 110. First light-emitting device; 111. First light-emitting chip; 1111. Red first light-emitting chip; 1112. Green first light-emitting chip; 1113. Blue first light-emitting chip; 120. Second light-emitting device; 121. Second light-emitting chip; 1211. Red second light-emitting chip; 1212. Green second light-emitting chip; 1213. Blue second light-emitting chip; 131. First stacked chip; 1311. Reflective layer; 1312. Transparent electrode layer; 1313. First semiconductor layer; 1314. Quantum well layer; 1315. Second semiconductor layer; 1316. First electrode; 1317. Second electrode; 132. Second stacked chip; 133. Third stacked chip; 134. Fourth stacked chip; 135. Rough surface; 136. Patterned structure; 140. Encapsulation layer; 150. First microlens; 160. Second microlens. Detailed implementation manners

[0032] Next, the technical solutions in the embodiments of the present application will be described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of the present application.

[0033] The present application provides a display device 10. Please refer to Figure 1 and Figure 2 , Figure 1A top view of a display device 10 provided by an embodiment of the present application. Figure 2 A cross-sectional view of a display device 10 provided by an embodiment of the present application. The display device 10 includes at least two display panels 100 arranged in a spliced manner, and there is a seam 101 between two adjacent display panels 100; wherein, the display panel 100 includes a first light-emitting area A arranged adjacent to the seam 101, and a second light-emitting area B relatively far from the seam 101, that is, the first light-emitting area A is located between the second light-emitting area B and the seam 101. The first light-emitting area A is provided with first light-emitting devices 110 arranged in an array, and the second light-emitting area B is provided with second light-emitting devices 120 arranged in an array. The light-emitting intensity of the first light-emitting devices 110 is greater than that of the second light-emitting devices 120.

[0034] In the present application, the display device 10 includes a large-size display screen formed by splicing two or more small-size display panels 100. For example, the large-size display screen can be a display screen with a specification of 15 inches or more, but is not limited thereto.

[0035] Please refer to Figure 1 and Figure 2 The display panel 100 includes a driving substrate 102 and a plurality of light-emitting devices arranged in an array above the driving substrate 102. The driving substrate 102 is used to drive the light-emitting devices to emit light, and the light-emitting devices can be of types such as LED, Mini LED, Micro LED, etc. Specifically, the display panel 100 includes a first light-emitting area A and a second light-emitting area B; the first light-emitting area A is an area close to the seam 101. The first light-emitting area A may include one or more first light-emitting devices 110 arranged along the first direction Y, or may include one or more columns of first light-emitting devices 110 arranged along the second direction X; the second light-emitting area B is located on the side of the first light-emitting area A far from the seam 101, and the second light-emitting area B includes a plurality of second light-emitting devices 120 arranged in an array along the first direction Y and the second direction X. In the present application, the light-emitting intensity of the first light-emitting devices 110 is greater than that of the second light-emitting devices 120. In the present application, by using the first light-emitting devices 110 with a higher light-emitting intensity in the first light-emitting area A close to the seam 101 and using the second light-emitting devices 120 with a relatively lower light-emitting intensity in the second light-emitting area B far from the seam 101, the dark line at the splicing position is compensated, so as to achieve the effect that the brightness of the splicing area (the splicing area includes the first light-emitting area A and the seam 101) is uniformly consistent with that of the second light-emitting area B, thereby improving the display quality of the display device 10.

[0036] In some embodiments, please refer to Figure 1 The width of the seam 101 is L, and L = [(I 1 / I 2 ) 1 / 2 -1]P 1, where I 1 represents the light output intensity of the first light-emitting device 110, and I 2 represents the light output intensity of the second light-emitting device 120, and P 1 represents the distance between adjacent second light-emitting devices 120.

[0037] Specifically, please refer to Figure 1 , the forward viewing angle light output intensity of the first light-emitting device 110 at a certain current I is I 1 , the forward viewing angle light output intensity of the second light-emitting device 120 at this current I is I 2 , the distance between two adjacent second light-emitting devices 120 is P 1 , where one second light-emitting device 120 is equivalent to a pixel, and P 1 is the pixel pitch. And the distance between two adjacent first light-emitting devices 120 on the same display panel 100 is P 1 , and the distance between adjacent first light-emitting device 110 and second light-emitting device 120 is also P 1 . When the I 1 , I 2 , and P 1 parameters of the display panel 100 are known, the width L of the bezel 101 can be calculated by the formula L = [(I 1 / I 2 ) 1 / 2 - 1]P 1 , so as to splice two adjacent display panels 100 under the condition that the bezel width is L, achieving the effect of uniform overall display brightness. This application can determine the size of the bezel 101 required between two adjacent display panels 100 through the difference in the light output intensity of the first light-emitting device 110 close to the bezel 101 and the second light-emitting device 120 far from the bezel 101.

[0038] Furthermore, the above formula L = [(I 1 / I 2 ) 1 / 2 - 1]P 1 , that is, I 1 / (P 1 + L) 2 = I 2 / P 1 2 , this application can also regulate the light output intensity I 1 of the first light-emitting device 110 and the light output intensity I 2 of the second light-emitting device 120 by adjusting the bezel width L to satisfy the equation I 1 / (P 1 + L) 2 = I 2 / P1 2 , achieving the effect that the brightness of the first light-emitting region A and the brightness of the second light-emitting region B can be controlled by adjusting the width of the splicing seam 101.

[0039] In some embodiments, please refer to Figure 1 , the distance between the first light-emitting device 110 and the splicing seam 101 is P 1 / 2. When the two display panels 100 are spliced, the distance between the first light-emitting devices 110 on both sides of the splicing seam 101 approaches P 1 , and the distance between two adjacent second light-emitting devices 120 in the second light-emitting region B of the display panel 100 is P 1 , the pixel pitch of the display panel 100 is P 1 , that is, after splicing, the distance between the first light-emitting devices 110 on both sides of the splicing seam 101 and close to the splicing seam 101 approaches the pixel pitch P 1 , which is beneficial to the uniformity of the overall pixel distribution after splicing, and further beneficial to achieving the effect of uniform overall display brightness of the display device 10.

[0040] In other embodiments, the distance between the first light-emitting device 110 close to the splicing seam 101 and the splicing seam 101 is not limited to the above P 1 / 2. The distance between the first light-emitting device 110 close to the splicing seam 101 and the splicing seam 101 can also be set to other appropriate distances, such as P 1 / 3, 2P 1 / 3, P 1 / 4, 3P 1 / 4, etc., but not limited thereto. Specifically, the distance between the first light-emitting device 110 close to the splicing seam 101 and the splicing seam 101 can be set according to the actual performance requirements of the display device 10.

[0041] In some embodiments, please refer to Figure 1 and Figure 2 , the first light-emitting device 110 includes a first light-emitting chip 111. Further, the first light-emitting device 110 may include at least one of a red first light-emitting chip 1111, a green first light-emitting chip 1112, and a blue first light-emitting chip 1113. The red first light-emitting chip 1111 emits red light, the green first light-emitting chip 1112 emits green light, and the blue first light-emitting chip 1113 emits blue light. For example, please refer to Figure 2 , the first light-emitting device 110 may include a red first light-emitting chip 1111, a green first light-emitting chip 1112, and a blue first light-emitting chip 1113. The red first light-emitting chip 1111, the green first light-emitting chip 1112, and the blue first light-emitting chip 1113 together constitute a pixel.

[0042] The second light-emitting device 120 includes a second light-emitting chip 121. Further, the second light-emitting device 120 may include at least one of a red second light-emitting chip 1211, a green second light-emitting chip 1212, and a blue second light-emitting chip 1213. The red second light-emitting chip 1211 emits red light, the green second light-emitting chip 1212 emits green light, and the blue second light-emitting chip 1213 emits blue light. For example, please refer to Figure 2 , the second light-emitting device 120 may include a red second light-emitting chip 1211, a green second light-emitting chip 1212, and a blue second light-emitting chip 1213. The red second light-emitting chip 1211, the green second light-emitting chip 1212, and the blue second light-emitting chip 1213 together form a pixel.

[0043] In some embodiments, please refer to Figures 2 to 6 , the first light-emitting chip 111 and the second light-emitting chip 121 are selected from a first stacked chip 131, a second stacked chip 132, a third stacked chip 133, and a fourth stacked chip 134. Among them, the light-emitting intensity of the first stacked chip 131, the light-emitting intensity of the second stacked chip 132, the light-emitting intensity of the third stacked chip 133, and the light-emitting intensity of the fourth stacked chip 134 increase in sequence.

[0044] In this application, the first stacked chip 131, the second stacked chip 132, the third stacked chip 133, and the fourth stacked chip 134 represent four structural types of light-emitting chips with different light-emitting intensities. By adopting different structures for the first light-emitting chip 111 and the second light-emitting chip 121 in this application, differential settings of the light-emitting intensity of the first light-emitting device 110 and the light-emitting intensity of the second light-emitting device 120 are achieved.

[0045] In some embodiments, please refer to Figures 2 to 6 , the first stacked chip 131, the second stacked chip 132, the third stacked chip 133, and the fourth stacked chip 134 are disposed above the driving substrate 102; one side (i.e., the light-emitting side) of the first stacked chip 131 away from the driving substrate 102 is set as a flat surface, one side (i.e., the light-emitting side) of the second stacked chip 132 away from the driving substrate 102 is provided with a patterned structure 136, one side (i.e., the light-emitting side) of the third stacked chip 133 away from the driving substrate 102 is set as a rough surface 135, and one side (i.e., the light-emitting side) of the fourth stacked chip 134 away from the driving substrate 102 is provided with a patterned structure 136 and is set as a rough surface 135. In this application, by adopting different surface treatments on the light-emitting side surface of the light-emitting chip, for example, by roughening or patterning the surface, the light-emitting intensity of the light-emitting chip can be improved.

[0046] Specifically, please refer to Figure 3, the first stacked chip 131 includes a reflective layer 1311, a transparent electrode layer 1312, a first semiconductor layer 1313, a quantum well layer 1314, and a second semiconductor layer 1315 that are stacked in sequence along the thickness direction of the driving substrate 102. The edges of the reflective layer 1311, the transparent electrode layer 1312, the first semiconductor layer 1313, and the quantum well layer 1314 are set to be recessed relative to the edge of the second semiconductor layer 1315; the first stacked chip 131 further includes a first electrode 1316 and a second electrode 1317. The first electrode 1316 is located between the reflective layer 1311 and the driving substrate 102, and the second electrode 1317 is located in the space formed by the recess of the reflective layer 1311, the transparent electrode layer 1312, the first semiconductor layer 1313, and the quantum well layer 1314 relative to the second semiconductor layer 1315, and the second electrode 1317 connects the second semiconductor layer 1315 and the driving substrate 102. Wherein, the side of the second semiconductor layer 1315 away from the driving substrate 102 is set as a flat surface.

[0047] Please refer to Figure 4 , the second stacked chip 132 has the same film stack structure as the first stacked chip 131. The difference between the second stacked chip 132 and the first stacked chip 131 is only that a patterned structure 136 is provided on the side of the second semiconductor layer 1315 away from the driving substrate 102. The patterned structure 136 can be formed by etching the originally flat surface of the second semiconductor layer 1315 through an etching process. The patterned structure 136 can be columnar, conical, circular, or other irregular shapes, which are not specifically limited herein.

[0048] Please refer to Figure 5 , the third stacked chip 133 has the same film stack structure as the first stacked chip 131. The difference between the third stacked chip 133 and the first stacked chip 131 is only that the side of the second semiconductor layer 1315 away from the driving substrate 102 is set as a rough surface 135. The rough surface 135 can be formed by etching the originally flat surface of the second semiconductor layer 1315 through an etching process. The surface roughness Sa of the second semiconductor layer 1315 ranges from 0.01 μm to 1 μm. For example, Sa can be selected as 0.02 μm, 0.04 μm, 0.06 μm, 0.08 μm, etc., but is not limited thereto.

[0049] Please refer to Figure 6, the fourth stacked chip 134 has the same film stack structure as the first stacked chip 131. The only difference between the fourth stacked chip 134 and the first stacked chip 131 is that a patterned structure 136 and a rough surface 135 are provided on the side of the second semiconductor layer 1315 away from the driving substrate 102. The patterned structure 136 of the fourth stacked chip 134 is similar to the patterned structure 136 of the second stacked chip 132, and the rough surface 135 of the fourth stacked chip 134 is similar to the rough surface 135 of the third stacked chip 133, which will not be elaborated here. Among them, for the fourth stacked chip 134, the patterned structure 136 can be formed on the surface of the second semiconductor layer 1315 first, and then the rough surface 135 is formed, so as to facilitate the process implementation and reduce the complexity of the process.

[0050] In the above embodiment, the reflective layer 1311 can be a Bragg reflection film; the transparent electrode layer 1312 can be an Indium Tin Oxide (ITO) film; the first semiconductor layer 1313 can be a p-type semiconductor, such as p-type Gallium Nitride (p-GaN); the second semiconductor layer 1315 can be an n-type semiconductor, such as n-type Gallium Nitride (n-GaN) or n-type Gallium Arsenide (p-GaAs). Among them, when the first light-emitting chip 111 and the second light-emitting chip 121 are blue light chips and green light chips, the material of the second semiconductor layer 1315 is n-GaN, and when the first light-emitting chip 111 and the second light-emitting chip 121 are red light chips, the material of the second semiconductor layer 1315 is p-GaAs; the first electrode 1316 is a P electrode (i.e., the anode), and the P electrode material is such as nickel (Ni), gold (Au), etc.; the second electrode 1317 is an N electrode (cathode), and the N electrode material is such as aluminum (Al), titanium (Ti), etc.

[0051] In this application, the first stacked chip 131, the second stacked chip 132, the third stacked chip 133, and the fourth stacked chip 134 all adopt a flip-chip structure, so as to facilitate planarization, roughening, or patterning treatment on the surface of the second semiconductor layer 1315 away from the driving substrate 102.

[0052] In this application, the chip structure selected for the first light-emitting chip 111 needs to be configured in combination with the chip structure selected for the second light-emitting chip 121 to satisfy that the light output intensity of the first light-emitting device 110 is greater than the light-emitting intensity of the second light-emitting device 120.

[0053] In one embodiment, when the first light-emitting chip 111 selects the fourth stacked chip 134, that is, the surface of the second semiconductor layer 1315 of the first light-emitting chip 111 has a patterned structure 136 and a rough surface 135, and the first light-emitting chip 111 has a relatively high light extraction intensity, the second light-emitting chip 121 can select one of the first stacked chip 131, the second stacked chip 132, and the third stacked chip 133. The surface of the second semiconductor layer 1315 of the first stacked chip 131 is a flat surface, the surface of the second semiconductor layer 1315 of the second stacked chip 132 has a patterned structure 136, and the surface of the second semiconductor layer 1315 of the third stacked chip 133 is a rough surface 135. The light extraction intensities of the first stacked chip 131, the second stacked chip 132, and the third stacked chip 133 are all less than the light extraction intensity of the fourth stacked chip 134. Therefore, in this embodiment, the light extraction intensity of the first light-emitting chip 111 is greater than the light extraction intensity of the second light-emitting chip 121. Furthermore, the light extraction intensity of the first light-emitting device 110 can be made greater than the light extraction intensity of the second light-emitting device 120 to compensate for the dark line at the splicing position, thereby achieving the effect of uniform brightness in the splicing area and the second light-emitting area B.

[0054] In one embodiment, the first light-emitting chip 111 selects the third stacked chip 133, that is, the surface of the second semiconductor layer 1315 of the first light-emitting chip 111 is a rough surface 135. Then the second light-emitting chip 121 selects one of the first stacked chip 131 and the second stacked chip 132. The surface of the second semiconductor layer 1315 of the first stacked chip 131 is a flat surface, and the surface of the second semiconductor layer 1315 of the second stacked chip 132 has a patterned structure 136. The light extraction intensities of the first stacked chip 131 and the second stacked chip 132 are both less than the light extraction intensity of the third stacked chip 133. Therefore, in this embodiment, the light extraction intensity of the first light-emitting chip 111 is greater than the light extraction intensity of the second light-emitting chip 121. Furthermore, the light extraction intensity of the first light-emitting device 110 can be made greater than the light extraction intensity of the second light-emitting device 120.

[0055] In one embodiment, the first light-emitting chip 111 is selected from the second stacked chip 132, that is, the surface of the second semiconductor layer 1315 of the first light-emitting chip 111 has a patterned structure 136. Then the second light-emitting chip 121 selects the first stacked chip 131. The surface of the second semiconductor layer 1315 of the first stacked chip 131 is a flat surface, and the light extraction intensity of the first stacked chip 131 is less than the light extraction intensity of the second stacked chip 132. Therefore, in this embodiment, the light extraction intensity of the first light-emitting chip 111 is greater than the light extraction intensity of the second light-emitting chip 121. Furthermore, the light extraction intensity of the first light-emitting device 110 can be made greater than the light extraction intensity of the second light-emitting device 120.

[0056] In some embodiments, please refer toFigure 2 When the first light-emitting device 110 includes a red first light-emitting chip 1111, a green first light-emitting chip 1112, and a blue first light-emitting chip 1113, the red first light-emitting chip 1111, the green first light-emitting chip 1112, and the blue first light-emitting chip 1113 have the same structure, that is, the red first light-emitting chip 1111, the green first light-emitting chip 1112, and the blue first light-emitting chip 1113 in the first light-emitting device 110 simultaneously select the second stacked chip 132, or simultaneously select the third stacked chip 133, or simultaneously select the fourth stacked chip 134. When the second light-emitting device 120 includes a red second light-emitting chip 1211, a green second light-emitting chip 1212, and a blue second light-emitting chip 1213, the red second light-emitting chip 1211, the green second light-emitting chip 1212, and the blue second light-emitting chip 1213 have the same structure, that is, the red second light-emitting chip 1211, the green second light-emitting chip 1212, and the blue second light-emitting chip 1213 in the second light-emitting device 120 simultaneously select the first stacked chip 131, or simultaneously select the second stacked chip 132, or simultaneously select the third stacked chip 133. That is, when a first light-emitting device 110 includes multiple first light-emitting chips 111, the multiple first light-emitting chips 111 adopt the same stacked chip, or when a second light-emitting device 120 includes multiple second light-emitting chips 121, the multiple second light-emitting chips 121 adopt the same stacked chip, so as to ensure the structural consistency of different light-emitting chips or light-emitting chips of different colors in the same light-emitting device, avoid problems such as color difference, and at the same time facilitate the simplification of the process.

[0057] In some embodiments, the first stacked chip 131, the second stacked chip 132, the third stacked chip 133, and the fourth stacked chip 134 have the same height in the thickness direction of the driving substrate 102 to ensure the uniformity of the overall structure, the uniformity of chip light emission, and the stability.

[0058] Specifically, the method for ensuring that the first stacked chip 131, the second stacked chip 132, the third stacked chip 133, and the fourth stacked chip 134 have the same height in the thickness direction of the driving substrate 102 can be to make the heights of different stacked chips the same by adjusting the thickness of the second semiconductor layer 1315. For example, before etching, the thickness of the second semiconductor layer 1315 of the second stacked chip 132 can be set to be greater than the thickness of the second semiconductor layer 1315 of the first stacked chip 131, so as to ensure that after part of the surface of the second semiconductor layer 1315 of the second stacked chip 132 is etched off, the overall thickness is consistent with the thickness of the second semiconductor layer 1315 of the first stacked chip 131. Similarly, before etching, the thickness of the second semiconductor layer 1315 of the third stacked chip 133 can be greater than the thickness of the second semiconductor layer 1315 of the first stacked chip 131. The thickness processing methods of the third stacked chip 133 and the fourth stacked chip 134 are similar to the above method and will not be elaborated here one by one.

[0059] In some embodiments, referring to Figure 2 , the first light-emitting device 110 further includes a packaging layer 140 on the side of the first light-emitting chip 111 away from the driving substrate 102, and the second light-emitting device 120 further includes a packaging layer 140 on the side of the second light-emitting chip 121 away from the driving substrate 102. The packaging layer 140 covers the first light-emitting chip 111 and the second light-emitting chip 121 and is used to protect the first light-emitting chip 111 and the second light-emitting chip 121. The material of the packaging layer 140 can be an organic material or an inorganic material, which is not limited here.

[0060] In some embodiments, referring to Figure 7 , the first light-emitting device 110 further includes a first microlens 150 on the side of the packaging layer 140 away from the first light-emitting chip 111; the second light-emitting device 120 further includes a second microlens 160 on the side of the packaging layer 140 away from the second light-emitting chip 121. Among them, the first microlens 150 and the second microlens 160 can improve the optical performance of the first light-emitting device 110 and the second light-emitting device 120. The first microlens 150 and the second microlens 160 can be the same or different. In this application, taking the first microlens 150 and the second microlens 160 being the same (same structure and material) as an example, the first microlens 150 and the second microlens 160 can be formed on the side of the packaging layer 140 away from the driving substrate 102 by a single process. In this application, when the first light-emitting device 110 includes the first microlens 150, the light output intensity I 1 of the first light-emitting device 110 also needs to consider the gain effect of the first microlens 150, that is, the light output intensity I 1represents the intensity of the emitted light after the light emitted by the first light-emitting chip 111 passes through the first microlens 150; similarly, when the second light-emitting device 120 includes the second microlens 160, the light-emitting intensity I of the second light-emitting device 120 1 The gain effect of the second microlens 160 also needs to be considered, that is, the light-emitting intensity I 2 represents the intensity of the emitted light after the light emitted by the second light-emitting chip 121 passes through the second microlens 160.

[0061] When the current tiled display device is used in a high-brightness application such as a vehicle head-up display (HUD), a microlens array structure usually needs to be set on the surface of the display panel. Considering the tiling misalignment and bonding process, it is usually necessary to bond the microlens array film after the display panel is tiled. However, due to the existence of the seam, the microlens array is prone to misalignment when aligning with the chip, affecting the overall light-emitting effect. In this application, the microlens array film can be bonded to the display panel 100 first, and then the display panel 100 can be tiled, which can improve the alignment accuracy of the microlens array, thereby ensuring the overall light-emitting effect of the display device 10.

[0062] This application provides a display device. The display device of this application makes the light-emitting intensity of the first light-emitting device in the first light-emitting area close to the seam greater than the light-emitting intensity of the second light-emitting device in the second light-emitting area far from the seam, so as to make up for the dark line at the tiled position, thereby achieving the effect that the brightness of the tiled area is uniform with that of the second light-emitting area. Compared with the current scheme of filling glue at the seam position, the display device of this application is simpler in the process, and does not require additional process steps such as refractive glue filling and planarization; compared with the current scheme of reducing the pitch of the edge chips, the display device of this application has more advantages in the design of small-pitch and high-resolution display products. Therefore, the display device of this application can effectively improve the dark line problem at the tiled position, achieve the effect of uniform overall display brightness, is beneficial to improving the display quality, has a simple process, and is applicable to small-pitch and high-resolution display products at the same time.

[0063] In the description of this application, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, "a plurality of" means two or more, unless otherwise specifically defined.

[0064] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For the parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.

[0065] The embodiments, implementation manners and related technical features of the present application can be combined and replaced with each other without conflict.

[0066] The above are only the preferred embodiments of the present application, and do not impose any formal restrictions on the present application. However, any simple modifications, equivalent changes and decorations made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still fall within the scope of the technical solution of the present application.

Claims

1. A display device, characterized in that: include: At least two display panels are spliced ​​together, with a splicing seam between two adjacent display panels; The display panel includes a first light-emitting area arranged adjacent to the seam, and a second light-emitting area relatively far away from the seam, the first light-emitting area is provided with first light-emitting devices arranged in an array, the second light-emitting area is provided with second light-emitting devices arranged in an array, and the light output intensity of the first light-emitting device is greater than the light output intensity of the second light-emitting device.

2. The display device according to claim 1, characterized in that The width of the joint is L, L = [(I1 / I2) 1 / 2 -1]P1; Wherein, I1 represents the light output intensity of the first light emitting device, I2 represents the light output intensity of the second light emitting device, and P1 represents the distance between adjacent second light emitting devices.

3. The display device according to claim 2, characterized in that: The distance between the first light emitting device and the joint is P1 / 2.

4. The display device according to claim 2, characterized in that: The first light emitting device includes a first light emitting chip, and the second light emitting device includes a second light emitting chip; The first light-emitting chip and the second light-emitting chip are selected from a first stacked chip, a second stacked chip, a third stacked chip and a fourth stacked chip, wherein the light output intensity of the first stacked chip, the light output intensity of the second stacked chip, the light output intensity of the third stacked chip and the light output intensity of the fourth stacked chip increase sequentially.

5. The display device according to claim 4, characterized in that: The display panel further includes a driving substrate, and the first stacked chip, the second stacked chip, the third stacked chip and the fourth stacked chip are arranged above the driving substrate; A side of the first stacked chip away from the driving substrate is set as a flat surface, a side of the second stacked chip away from the driving substrate is set as a patterned structure, a side of the third stacked chip away from the driving substrate is set as a rough surface, and a side of the fourth stacked chip away from the driving substrate is set as a patterned structure and is set as a rough surface.

6. The display device according to claim 5, characterized in that: The first light-emitting chip is selected from the fourth stacked chip, and the second light-emitting chip is selected from the first stacked chip, the second stacked chip and the third stacked chip.

7. The display device according to claim 5, characterized in that: The first light-emitting chip is selected from the third stacked chip, and the second light-emitting chip is selected from the first stacked chip and the second stacked chip.

8. The display device according to claim 5, characterized in that The first light-emitting chip is selected from the second stacked chip, and the second light-emitting chip is selected from the first stacked chip.

9. The display device according to claim 5, characterized in that: The first stacked chip, the second stacked chip, the third stacked chip, and the fourth stacked chip have the same height along the thickness direction of the driving substrate.

10. The display device according to any one of claims 1 to 9, characterized in that: The first light emitting device further includes a first micro lens located at a side of the first light emitting chip away from the driving substrate, and the second light emitting device further includes a second micro lens located at a side of the second light emitting chip away from the driving substrate.

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