Substrate processing apparatus

Abstract

The invention provides a substrate processing apparatus. The present invention suppresses the generation of fine particles and restricts the movement of a cover due to the internal pressure of a processing space. A substrate processing apparatus according to an embodiment processes a substrate in a high-pressure environment, and includes a pressure vessel, a lid, and a lock mechanism. The pressure vessel has an opening in the upper portion. The cover body blocks the opening. The lock mechanism restricts the movement of the lid in the lid opening direction due to the internal pressure of the pressure vessel. In addition, the lock mechanism is provided with a lock member and a movement mechanism. The cross-section of the lock member is formed in a two-strand shape. The moving mechanism moves the lock member in the horizontal direction.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of September 25, 2018, an application number of 201811119082.6, and an invention title of "Substrate Processing Apparatus". Technical Field

[0002] The disclosed embodiment relates to a substrate processing apparatus that uses a processing fluid in a supercritical state to remove a liquid attached to the surface of a substrate. Background Art

[0003] Conventionally, a supercritical drying process is known. In this supercritical drying process, after a substrate such as a semiconductor wafer is processed with a liquid, the substrate in a state where its surface is wetted due to the liquid is brought into contact with a supercritical fluid to dry the substrate.

[0004] The supercritical drying process is performed in a high-pressure environment. Therefore, there is a case where a locking mechanism for preventing the lid of a pressure vessel from moving due to the internal pressure of the pressure vessel is provided in a substrate processing apparatus that performs the supercritical drying process.

[0005] For example, Patent Document 1 discloses a locking mechanism that, after a lid seals an opening of a pressure vessel, moves a locking plate into contact with the lid to restrict the movement of the lid caused by the internal pressure of the pressure vessel.

[0006] Prior Art Documents

[0007] Patent Documents

[0008] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2013 - 131729 Summary of the Invention

[0009] Problems to be Solved by the Invention

[0010] However, in the above-described prior art, when the locking plate is moved into contact with the lid, there is a possibility that the lid or the pressure vessel may rub against the locking plate to generate fine particles. This problem is a common problem in substrate processing apparatuses that process substrates in a high-pressure environment, and the processing performed in a high-pressure environment is not limited to the supercritical drying process.

[0011] An object of one aspect of the embodiment is to provide a substrate processing apparatus that can suppress the generation of fine particles and at the same time restrict the movement of the lid caused by the internal pressure of the processing space.

[0012] Solutions for Solving the Problems

[0013] One form of the substrate processing apparatus according to an embodiment is a substrate processing apparatus that processes a substrate in a high-pressure environment, and includes a pressure vessel, a lid, and a locking mechanism. The pressure vessel has an opening. The lid seals the opening. The locking mechanism restricts the movement of the lid in the opening direction due to the internal pressure of the pressure vessel. Further, the locking mechanism includes an abutting member, a moving mechanism, and a rolling member. The abutting member abuts against an abutting surface that is on the side opposite to the sealing surface among the plurality of surfaces of the lid. The moving mechanism moves the abutting member in a direction along the abutting surface. The rolling member is provided on an abutting surface of the abutting member that abuts against the lid or the pressure vessel.

[0014] Effects of the Invention

[0015] According to one form of the embodiment, it is possible to suppress the generation of fine particles and restrict the movement of the lid due to the internal pressure of the pressure vessel. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from above.

[0017] Figure 2 is a flowchart showing the sequence of a series of substrate processes performed in the substrate processing system according to the embodiment.

[0018] Figure 3 is a diagram showing a structural example of the liquid processing unit.

[0019] Figure 4 is a schematic perspective view showing a structural example of the drying unit.

[0020] Figure 5A is a schematic cross-sectional view of the transfer area.

[0021] Figure 5B is a schematic cross-sectional view of the transfer area.

[0022] Figure 6 is a schematic cross-sectional view showing a structural example of the locking mechanism.

[0023] Figure 7A is an operation explanatory view of the locking mechanism.

[0024] Figure 7B is an operation explanatory view of the locking mechanism.

[0025] Figure 7C is an operation explanatory view of the locking mechanism.

[0026] Figure 7D is an operation explanatory view of the locking mechanism.

[0027] Figure 8AThis is a diagram showing a structural example of a locking mechanism according to a modified example.

[0028] Figure 8B This is a diagram showing a structural example of a locking mechanism according to a modified example.

[0029] Explanation of Reference Numerals

[0030] W, wafer; 1, substrate processing system; 4, transfer module; 5, processing module; 18, drying unit; 31, processing container; 31a, processing space; 31b, opening; 31e, first through-hole; 31f, second through-hole; 33, lid; 42, locking member; 42a, lid-side abutting surface; 42b, through-hole-side abutting surface; 43, lifting mechanism; 45a, 45b, rolling members; 46a, 46b, recesses; 47a, 47b, biasing members; 50, locking mechanism. Detailed implementation manners

[0031] Hereinafter, the form of the substrate processing apparatus for implementing the present application (hereinafter, referred to as "implementation manner") will be described in detail with reference to the drawings. In addition, the substrate processing apparatus of the present application is not limited to this implementation manner. In addition, the respective implementation manners can be appropriately combined within the range where the processing contents do not conflict. In addition, in the following respective implementation manners, the same reference numerals are assigned to the same parts, and repeated descriptions are omitted.

[0032] 〔1. Structure of substrate processing system〕

[0033] First, with reference to Figure 1 the structure of the substrate processing system of the implementation manner will be described. Figure 1 This is a schematic cross-sectional view of the substrate processing system of the implementation manner as viewed from above. In addition, hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0034] As Figure 1 shown, the substrate processing system 1 includes an input / output station 2 and a processing station 3. The input / output station 2 and the processing station 3 are provided adjacent to each other.

[0035] (Regarding the input / output station 2)

[0036] The input / output station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C that horizontally accommodate a plurality of semiconductor wafers W (hereinafter, referred to as "wafer W") are placed on the carrier placement unit 11.

[0037] The transfer unit 12 is provided adjacent to the carrier placement unit 11. A transfer device 13 and a transfer section 14 are arranged inside the transfer unit 12.

[0038] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 13 can move in the horizontal and vertical directions and rotate about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0039] (For the processing station 3)

[0040] The processing station 3 is disposed adjacent to the transfer section 12. The processing station 3 includes a transfer module 4 and a plurality of processing modules 5.

[0041] (For the transfer module 4)

[0042] The transfer module 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is a rectangular parallelepiped-shaped area extending along the arrangement direction (X-axis direction) of the input / output station 2 and the processing station 3. The transfer device 16 is disposed in the transfer area 15.

[0043] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 16 can move in the horizontal and vertical directions and rotate about a vertical axis, and transfers the wafer W between the transfer section 14 and the plurality of processing modules 5 using the wafer holding mechanism.

[0044] The plurality of processing modules 5 are disposed adjacent to the transfer area 15 on both sides of the transfer area 15. Specifically, the plurality of processing modules 5 are disposed on one side (Y-axis positive direction side) and the other side (Y-axis negative direction side) of the transfer area 15 in the direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the input / output station 2 and the processing station 3.

[0045] Each processing module 5 includes a liquid processing unit 17, a drying unit 18, and a supply unit 19.

[0046] The liquid processing unit 17 performs a cleaning process for cleaning the upper surface which is the pattern formation surface of the wafer W. In addition, the liquid processing unit 17 performs a liquid film formation process for forming a liquid film on the upper surface of the wafer W after the cleaning process. The structure of the liquid processing unit 17 will be described later.

[0047] The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state. The structure of the drying unit 18 will be described later.

[0048] The supply unit 19 supplies the processing fluid to the drying unit 18. Specifically, the supply unit 19 includes: a supply equipment group including a flow meter, a flow regulator, a back pressure valve, a heater, etc.; and a housing for housing the supply equipment group. In the present embodiment, the supply unit 19 supplies CO2 is supplied to the drying unit 18 as a processing fluid.

[0049] The liquid processing unit 17, the drying unit 18, and the supply unit 19 are arranged along the conveyance area 15 (that is, along the X-axis direction). Among the liquid processing unit 17, the drying unit 18, and the supply unit 19, the liquid processing unit 17 is arranged at the position closest to the input / output station 2, and the supply unit 19 is arranged at the position farthest from the input / output station 2.

[0050] In addition, the drying unit 18 includes: a processing area 181 for performing supercritical drying processing; and a transfer area 182 for transferring the wafer W between the transfer module 4 and the processing area 181. These processing area 181 and transfer area 182 are arranged along the conveyance area 15.

[0051] Specifically, among the processing area 181 and the transfer area 182, the transfer area 182 is arranged on the side closer to the liquid processing unit 17 than the processing area 181. That is, in each processing module 5, the liquid processing unit 17, the transfer area 182, the processing area 181, and the supply unit 19 are arranged in this order along the conveyance area 15.

[0052] (For the control device 6)

[0053] The substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer and includes a control unit 61 and a storage unit 62.

[0054] The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), input / output ports, and various circuits. The CPU of the microcomputer realizes the control of the conveyance devices 13 and 16, the liquid processing unit 17, the drying unit 18, the supply unit 19, etc. by reading and executing the program stored in the ROM.

[0055] In addition, this program can be either a program recorded on a computer-readable recording medium or a program installed from this recording medium into the storage unit 62 of the control device 6. As a computer-readable recording medium, there are, for example, a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc.

[0056] The storage unit 62 can be realized by, for example, semiconductor memory elements such as a RAM and a flash memory, or storage devices such as a hard disk and an optical disc.

[0057] [2. Process of substrate processing]

[0058] Next, with reference to Figure 2 and Figure 3 a series of substrate processing procedures in the above-described substrate processing system 1 will be described. Figure 2 is a flowchart showing the order of a series of substrate processing performed in the substrate processing system 1 of the embodiment. In addition, Figure 2 the series of substrate processing shown is executed under the control of the control unit 61.

[0059] As Figure 2 shown, in the substrate processing system 1, first, an input process (step S101) is performed. In the input process, the transfer device 13 (refer to Figure 1 ) takes out the wafer W from the carrier C and places it on the transfer section 14. Next, the transfer device 16 (refer to Figure 1 ) takes out the wafer W from the transfer section 14 and inputs it to the liquid processing unit 17.

[0060] Next, in the substrate processing system 1, a cleaning process (step S102) is performed in the liquid processing unit 17. The liquid processing unit 17 supplies various processing liquids to the upper surface, which is the pattern formation surface of the wafer W, and removes fine particles, natural oxide films, etc. from the upper surface of the wafer W.

[0061] Next, in the substrate processing system 1, a liquid film formation process (step S103) is performed in the liquid processing unit 17. The liquid processing unit 17 supplies liquid IPA (hereinafter referred to as "IPA liquid") to the upper surface of the wafer W after the cleaning process, and forms a liquid film of the IPA liquid on the upper surface of the wafer W.

[0062] After the wafer W after the liquid film formation process is transported by the transfer device 16 to the transfer area 182 of the drying unit 18 disposed in the same processing module 5, it is transported from the transfer area 182 to the processing area 181. After that, in the substrate processing system 1, a supercritical drying process (step S104) is performed in the processing area 181. In the supercritical drying process, the drying unit 18 makes the wafer W after the liquid film formation process contact with a supercritical state processing fluid to dry the wafer W after the liquid film formation process.

[0063] Next, in the substrate processing system 1, an output process (step S105) is performed. In the output process, first, the wafer W after the supercritical drying process is transported from the processing area 181 to the transfer area 182. After that, the transfer device 16 takes out the wafer W after the supercritical drying process from the transfer area 182 and transports it to the transfer section 14. After that, the transfer device 13 takes out the wafer W after the supercritical drying process from the transfer section 14 and transports it to the carrier C. When the output process is completed, a series of substrate processing for 1 wafer W is completed.

[0064] 〔3. Structure of Liquid Processing Unit〕

[0065] Next, with reference to Figure 3 the structure of the liquid processing unit 17 will be described. Figure 3 is a diagram showing an example of the structure of the liquid processing unit 17. The liquid processing unit 17 is configured as a single-sheet cleaning apparatus that cleans the wafer W sheet by sheet using, for example, spin cleaning.

[0066] As Figure 3 shown, the liquid processing unit 17 holds the wafer W substantially horizontally using a wafer holding mechanism 25 disposed in an outer chamber 23 that forms a processing space, and rotates the wafer W by rotating the wafer holding mechanism 25 about a vertical axis. Further, the liquid processing unit 17 moves a nozzle arm 26 above the rotating wafer W, and supplies a chemical solution and a rinse liquid in a predetermined order from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26, thereby performing a cleaning process on the upper surface of the wafer W.

[0067] In addition, in the liquid processing unit 17, a chemical solution supply path 25a is also formed inside the wafer holding mechanism 25. Further, the lower surface of the wafer W is also cleaned with the chemical solution and the rinse liquid supplied from the chemical solution supply path 25a.

[0068] In the cleaning process, for example, first, removal of fine particles and organic contaminants is performed using SC1 liquid (a mixed liquid of ammonia and hydrogen peroxide water) as an alkaline chemical solution, and then, rinse cleaning is performed using deionized water (hereinafter referred to as "DIW") as a rinse liquid. Next, removal of the native oxide film is performed using a diluted hydrofluoric acid aqueous solution (hereinafter referred to as "DHF") as an acidic chemical solution, and then, rinse cleaning is performed using DIW.

[0069] The above various chemical solutions are received by the outer chamber 23 and an inner cup 24 disposed in the outer chamber 23, and are discharged from a drain port 23a provided at the bottom of the outer chamber 23 and a drain port 24a provided at the bottom of the inner cup 24. Moreover, the atmosphere gas in the outer chamber 23 is exhausted from an exhaust port 23b provided at the bottom of the outer chamber 23.

[0070] The liquid film forming process is performed after the rinse process in the cleaning process. Specifically, the liquid processing unit 17 supplies IPA liquid to the upper surface and the lower surface of the wafer W while rotating the wafer holding mechanism 25. Thereby, the DIW remaining on both surfaces of the wafer W is replaced with IPA. After that, the liquid processing unit 17 gently stops the rotation of the wafer holding mechanism 25.

[0071] The wafer W that has completed the liquid film formation process is transferred to the transfer device 16 by an unillustrated transfer mechanism of the wafer holding mechanism 25 while maintaining the state of having a liquid film of IPA liquid formed on its upper surface, and is output from the liquid processing unit 17. The liquid film formed on the wafer W prevents pattern collapse due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the transfer of the wafer W from the liquid processing unit 17 to the drying unit 18 and during the input operation to the drying unit 18.

[0072] 〔4. Structure of the drying unit〕

[0073] Next, Figure 4 the structure of the drying unit 18 will be described. Figure 4 is a schematic perspective view showing an example of the structure of the drying unit 18.

[0074] As Figure 4 shown, the drying unit 18 includes a processing container 31, a holding body 32, and a lid body 33.

[0075] The processing container 31 is a pressure vessel capable of forming a high-pressure environment of, for example, about 16 MPa to 20 MPa. The processing container 31 is disposed in the processing area 181 (refer to Figure 1 ), and the supercritical drying process is performed in the processing space 31a inside the processing container 31. An opening 31b that communicates the processing space 31a and the transfer area 182 (refer to Figure 1 ) is formed on the side surface of the processing container 31 facing the transfer area 182.

[0076] The holding body 32 holds the wafer W in the horizontal direction. The lid body 33 supports the holding body 32. The lid body 33 is connected to an unillustrated moving mechanism, and together with the holding body 32, it moves horizontally between the processing area 181 and the transfer area 182 by using this moving mechanism. By moving into the processing area 181, the holding body 32 is disposed inside the processing space 31a of the processing container 31, and the lid body 33 closes the opening 31b of the processing space 31a.

[0077] A supply section 35 and a discharge section 37 are provided in the processing container 31. The supply section 35 is connected to a supply pipe 101 through which the processing fluid supplied to the processing space 31a flows. The supply pipe 101 is connected to the supply equipment group of the supply unit 19. The discharge section 37 is connected to a separate exhaust pipe 102 through which the processing fluid discharged from the processing space 31a flows.

[0078] The supply section 35 is provided on the side surface of the processing container 31 on the side opposite to the side where the opening 31b is formed. In addition, the discharge section 37 is provided on the bottom surface of the processing container 31. Furthermore, in Figure 4One supply unit 35 and one discharge unit 37 are respectively shown, and the number of the supply unit 35 and the discharge unit 37 is not particularly limited.

[0079] A supply manifold 38 and a discharge manifold 40 are provided in the processing space 31a. The supply manifold 38 is connected to the supply unit 35 to supply a processing fluid to the processing space 31a. The discharge manifold 40 is connected to the discharge unit 37 to discharge the processing fluid from the processing space 31a.

[0080] On the supply manifold 38, a plurality of supply ports 38a are provided along the length direction (Y-axis direction) of the supply manifold 38. The plurality of supply ports 38a open toward the opening 31b. On the discharge manifold 40, a plurality of discharge ports 40a are provided along the length direction (Y-axis direction) of the discharge manifold 40. The plurality of discharge ports 40a open upward.

[0081] The drying unit 18 supplies the processing fluid from the plurality of supply ports 38a of the supply manifold 38 to the processing space 31a, and at the same time discharges the processing fluid in the processing space 31a through the plurality of discharge ports 40a of the discharge manifold 40. A regulating valve for adjusting the discharge amount of the processing fluid from the processing space 31a is provided in the discharge path of the processing fluid, and the discharge amount of the processing fluid is adjusted by the regulating valve so that the pressure in the processing space 31a is adjusted to a desired pressure. Thus, the supercritical state of the processing fluid is maintained in the processing space 31a. Hereinafter, the processing fluid in the supercritical state will be referred to as "supercritical fluid".

[0082] In the processing space 31a, a laminar flow of the supercritical fluid flowing in a predetermined direction is formed around the wafer W. The laminar flow of the supercritical fluid, for example, flows from the supply manifold 38 above the wafer W along the upper surface of the wafer W toward the upper part of the opening 31b. Moreover, the laminar flow of the supercritical fluid changes the flow direction to the lower side above the opening 31b, passes near the opening 31b, and flows toward the discharge manifold 40.

[0083] In this example of the laminar flow, inside the processing space 31a, the laminar flow of the supercritical fluid passes through the opening 32a formed between the wafer W and the cover body 33 in the holding body 32.

[0084] The IPA liquid present on the pattern formation surface (upper surface) of the wafer W gradually dissolves in the supercritical fluid by contacting the supercritical fluid in a high-pressure state (for example, 16 MPa), and finally, is replaced by the supercritical fluid. Thus, a state is formed in which the gaps between the patterns are filled with the supercritical fluid.

[0085] After that, the drying unit 18 reduces the pressure in the processing space 31a from the high-pressure state to the atmospheric pressure. Thus, the supercritical fluid filling the gaps between the patterns changes into the normal, i.e., gaseous state of the processing fluid.

[0086] Thus, after the drying unit 18 replaces the IPA liquid present on the pattern formation surface with a supercritical fluid, it returns the supercritical fluid to a gaseous state of the processing fluid, thereby removing the IPA liquid from the pattern formation surface and drying the pattern formation surface.

[0087] The viscosity of the supercritical fluid is smaller than that of a liquid (e.g., IPA liquid), and in addition, its ability to dissolve liquids is also higher. Moreover, there is no interface between the supercritical fluid and the liquid and gas in an equilibrium state. Therefore, by performing supercritical drying treatment, the liquid can be dried without being affected by surface tension. That is, it is possible to suppress pattern collapse during the drying process.

[0088] In addition, in the embodiment, IPA liquid is used as the liquid for preventing drying, and CO 2 is used as the processing fluid. Liquids other than IPA can be used as the liquid for preventing drying, and fluids other than CO 2 can be used as the processing fluid.

[0089] As Figure 4 shown, the processing container 31 includes a first protruding portion 31c and a second protruding portion 31d that protrude toward the lid opening direction side (here, the negative X-axis direction side) with respect to the opening 31b. The first protruding portion 31c protrudes from the lower part of the opening 31b toward the negative X-axis direction side, and the second protruding portion 31d protrudes from the upper part of the opening 31b toward the negative X-axis direction side.

[0090] A plurality (here, two) of first through holes 31e that communicate the upper surface and the lower surface of the first protruding portion 31c are formed in the first protruding portion 31c. In addition, on the second protruding portion 31d, a plurality (here, two) of second through holes 31f that communicate the upper surface and the lower surface of the second protruding portion 31d are formed at positions respectively opposite to the plurality of first through holes 31e.

[0091] In addition, the drying unit 18 includes a plurality (here, two) of locking members 42 (an example of an abutting member). The locking members 42 respectively penetrate through the plurality of first through holes 31e formed in the first protruding portion 31c.

[0092] Here, with reference to Figure 5A and Figure 5B the operation of the locking member 42 will be described. Figure 5A and Figure 5B are schematic cross-sectional views of the transfer area 182. In addition, Figure 5A shows the state in which the holder 32 and the lid 33 are arranged in the transfer area 182, Figure 5B shows the state in which the holder 32 and the lid 33 are arranged in the processing area 181.

[0093] As shown Figure 5A in FIG. 1, a lifting mechanism 43 (an example of a moving mechanism) for lifting and lowering the locking member 42 is connected to the locking member 42.

[0094] As shown Figure 5B in FIG. 2, the drying unit 18 first moves the holding body 32 and the lid body 33 using a moving mechanism (not shown), and seals the processing space 31a with the lid body 33. Then, the drying unit 18 uses the lifting mechanism 43 to raise the locking member 42 so that the locking member 42 penetrates into the second through-hole 31f formed in the second protruding portion 31d.

[0095] The locking member 42 presses the lid body 33 toward the processing space 31a against the internal pressure caused by the supercritical fluid supplied to the processing space 31a. Thereby, the state in which the processing space 31a is sealed by the lid body 33 can be maintained.

[0096] 〔5. Structure of the locking mechanism〕

[0097] Refer to Figure 6 FIG. 3 to describe the specific structure of the locking mechanism including the locking member 42 and the lifting mechanism 43. Figure 6 FIG. 3 is a schematic cross-sectional view showing an example of the structure of the locking mechanism.

[0098] As shown Figure 6 in FIG. 3, the locking mechanism 50 includes the above-described locking member 42 and the lifting mechanism 43, and uses the locking member 42 to restrict the movement of the lid body 33 in the lid-opening direction (negative X-axis direction) caused by the internal pressure of the processing container 31.

[0099] The lifting mechanism 43 includes: a support portion 43a that supports the locking member 42 from below; and a lifting portion 43b that moves the support portion 43a in the vertical direction (Z-axis direction). In addition, the lifting mechanism 43 includes a connecting portion 43c that connects the support portion 43a and the locking member 42. The connecting portion 43c has, for example, a suspended structure and connects the locking member 42 so as to be swingable relative to the support portion 43a.

[0100] When the locking member 42 rises in the vertical direction by the lifting mechanism 43, it passes near the inner surfaces 31e1, 31e2 of the first through-hole 31e, the abutting surface 33a which is the surface on the side opposite to the sealing surface among the plurality of surfaces of the lid body 33, and the inner surfaces 31f1, 31f2 of the second through-hole 31f. In addition, the sealing surface is the surface on the processing space 31a side among the plurality of surfaces of the lid body 33, that is, the surface that seals the processing space 31a.

[0101] The contact surface 33a of the lid body 33 is a plane along the vertical direction, that is, a vertical plane. Similarly, the inner surfaces 31e1, 31e2 of the first through hole 31e and the inner surfaces 31f1, 31f2 of the second through hole 31f are also vertical planes. In addition, hereinafter, the inner surfaces 31e1, 31f1 will be referred to as the first inner surfaces 31e1, 31e2, and the inner surfaces 31e2, 31f2 will be referred to as the second inner surfaces 31e2, 31e2.

[0102] The processing container 31, the lid body 33, and the locking member 42 are formed of metal. Therefore, when the locking member 42 rises or falls, due to the friction between the lid body 33 or the processing container 31 and the locking member 42, the processing container 31, the lid body 33, or the locking member 42 may be cut and fine particles may be generated.

[0103] Therefore, in the locking mechanism 50 of the embodiment, rolling members 45a, 45b are provided on the contact surfaces of the locking member 42 that come into contact with the lid body 33 or the processing container 31. When the locking member 42 rises or falls, instead of the locking member 42, the rolling members 45a, 45b provided on the locking member 42 come into contact with the lid body 33 or the processing container 31, thereby being able to suppress "friction" and reduce the generation of fine particles.

[0104] The rolling members 45a, 45b are, for example, resin balls or rollers. The rolling member 45a is provided on the lid-side contact surface 42a of the locking member 42, which is one of the multiple surfaces of the locking member 42 and serves as the contact surface that comes into contact with the contact surface 33a in the lid body 33.

[0105] Specifically, a recess 46a is formed on the lid-side contact surface 42a of the locking member 42, and the rolling member 45a is accommodated in the recess 46a.

[0106] A biasing member 47a is provided in the recess 46a. The biasing member 47a is, for example, a helical spring or a leaf spring, and biases the rolling member 45a toward the outside of the recess 46a.

[0107] The rolling member 45a is accommodated in the recess 46a in a state where a part of it protrudes from the recess 46a due to the action of the biasing member 47a.

[0108] In addition, the rolling member 45b is provided on the surface of the locking member 42 that is on the side opposite to the lid-side contact surface 42a among the multiple surfaces of the locking member 42, and serves as the through-hole-side contact surface 42b that comes into contact with the first inner surface 31e1 of the first through hole 31e and the first inner surface 31f1 of the second through hole 31f.

[0109] Specifically, a recess 46b is formed on the through-hole-side contact surface 42b of the locking member 42, and the rolling member 45b is accommodated in the recess 46b.

[0110] A biasing member 47b is provided in the recess 46b. The biasing member 47b is, for example, a coil spring or a leaf spring, and biases the rolling member 45b toward the outside of the recess 46b.

[0111] The rolling member 45b is received in the recess 46b in a state where a part thereof protrudes from the recess 46b due to the action of the biasing member 47b.

[0112] In addition, the openings of the recesses 46a and 46b may be formed slightly smaller than the rolling members 45a so that the rolling members 45a and 45b biased by the biasing members 47a and 47b do not fly out of the recesses 46a and 46b. The rolling members 45a and 45b are rotatably received in the recesses 46a and 46b.

[0113] In addition, as Figure 6 shown, the through-hole side contact surface 42b is inclined in the positive X-axis direction, which is opposite to the lid opening direction of the lid body 33, with respect to the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the locking member 42 is not in contact with the lid body 33 and the processing container 31. The rolling member 45b, the recess 46b, and the biasing member 47b are formed in the upper part of the through-hole side contact surface 42b.

[0114] In addition, the lid body side contact surface 42a includes a first surface 42a1 parallel to the through-hole side contact surface 42b and a second surface 42a2 connected to the first surface 42a1. The second surface 42a2 is located at a position on the locking direction (positive Z-axis direction) side closer to the top than the first surface 42a1 in the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the locking member 42 is not in contact with the lid body 33 and the processing container 31. Specifically, in the present embodiment, the second surface 42a2 is connected to the second surface 42a2 at a position above the first surface 42a1. The second surface 42a2 is inclined in the lid opening direction (negative X-axis direction) of the lid body 33 with respect to the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the lid body side contact surface 42a is not in contact with the lid body 33 and the processing container 31.

[0115] In addition, the rolling member 45a, the recess 46a, and the biasing member 47a are provided at the boundary portion between the first surface 42a1 and the second surface 42a2 in the lid body side contact surface 42a.

[0116] In addition, resin members 48a and 48b are provided at the upper end portion of the second surface 42a2 and the lower end portion of the through-hole side contact surface 42b, respectively.

[0117] 〔6. Operation of the locking mechanism〕

[0118] Next, with reference to Figures 7A to 7D the operation of the above-described locking mechanism 50 will be described. Figures 7A to 7D FIG. is an explanatory diagram of the operation of the locking mechanism 50. The drying unit 18 performs the Figures 7A to 7D operation shown.

[0119] In a state where the locking member 42 is not in contact with the lid body 33 and the processing container 31 ( Figure 6 the state shown), the rolling member 45a provided on the lid-side contact surface 42a protrudes maximally toward the contact surface 33a of the lid body 33 and the second inner surfaces 31e2 and 31f2 of the processing container 31. Therefore, as Figure 7A shown, by raising the locking member 42 using the lifting mechanism 43, first, the rolling member 45a comes into contact with the processing container 31. Specifically, the rolling member 45a comes into contact with the second inner surface 31e2 of the first through-hole 31e.

[0120] After that, as Figure 7B shown, the rolling member 45a comes into contact with the second inner surface 31e2 of the first through-hole 31e, and at the same time, the locking member 42 rises. At this time, due to the rolling member 45a receiving a resistance force in the lid-opening direction (negative X-axis direction) from the second inner surface 31e2, the locking member 42 starts to stand up.

[0121] Next, as Figure 7C shown, if the locking member 42 rises further, the rolling member 45a comes into contact with the contact surface 33a of the lid body 33. In addition, as the locking member 42 stands up further, the rolling member 45b provided on the through-hole-side contact surface 42b comes into contact with the first inner surface 31f1 of the second through-hole 31f. In this state, the first surface 42a1 of the lid-side contact surface 42a and the through-hole-side contact surface 42b become a plane in the vertical direction, i.e., a vertical plane.

[0122] After that, if the supercritical drying process is started, then as Figure 7DAs shown, due to the internal pressure of the processing container 31, the lid body 33 moves in the lid-opening direction (negative X-axis direction). At this time, the rolling member 45a is pushed by the lid body 33, and the rolling member 45a moves in the lid-opening direction (negative X-axis direction) against the acting force of the biasing member 47a, and thus is entirely received in the recess 46a. As a result, the lid body side contact surface 42a of the locking member 42 comes into contact with the contact surface 33a of the lid body 33. Similarly, the rolling member 45b moves in the lid-opening direction (negative X-axis direction) against the acting force of the biasing member 47b, and thus is entirely received in the recess 46b. As a result, the through-hole side contact surface 42b of the locking member 42 comes into contact with the first inner surface 31e1 of the first through-hole 31e and the first inner surface 31f1 of the second through-hole 31f. As a result, the movement of the lid body 33 in the lid-opening direction due to the internal pressure of the processing container 31 is restricted by the locking mechanism 50.

[0123] On the other hand, when the supercritical drying process ends and the internal pressure of the processing container 31 decreases, the rolling member 45a projects outward from the recess 46a due to the acting force of the biasing member 47a, and the rolling member 45b projects outward from the recess 46b due to the acting force of the biasing member 47b. As a result, the locking mechanism 50 returns to Figure 7C the state shown.

[0124] After that, as the locking member 42 descends, the rolling member 45a comes into contact with the contact surface 33a of the lid body 33 and the second inner surface 31e2 of the processing container 31, and at the same time, the rolling member 45b rolls and descends while coming into contact with the first inner surface 31f1 of the processing container 31. Then, the locking mechanism 50 returns to Figure 6 the state shown.

[0125] Thus, in the locking mechanism 50 of the embodiment, the rolling member 45a is provided on the lid body side contact surface 42a of the locking member 42. The rolling member 45a rolls as the locking member 42 ascends, in other words, comes into contact with the second inner surface 31e2 without generating friction. Therefore, according to the locking mechanism 50 of the embodiment, it is possible to suppress the generation of fine particles when the locking member 42 ascends or descends. In addition, since the rolling member 45a is made of resin, even if friction occurs, there is no need to worry about the processing container 31 or the lid body 33 being cut. That is, it is difficult to generate metal fine particles.

[0126] In addition, in the locking mechanism 50 of the embodiment, the rolling member 45a (an example of the lid-side rolling member) is housed in the recess 46a in a state where a part thereof protrudes from the recess 46a due to the acting force of the biasing member 47a. And when the rolling member 45a is pressed by the lid 33, it moves in the lid-opening direction (negative X-axis direction) by overcoming the acting force of the biasing member 47a, and thus is entirely housed in the recess 46a. Therefore, the lid-side contact surface 42a of the locking member 42 can contact the contact surface 33a of the lid 33 without generating friction.

[0127] In addition, the locking mechanism 50 of the embodiment is also provided with a rolling member 45b (an example of the through-hole-side rolling member) on the through-hole-side contact surface 42b of the locking member 42. The rolling member 45b rolls as the locking member 42 descends, in other words, without generating friction, and contacts the first inner surface 31f1. Therefore, according to the locking mechanism 50 of the embodiment, the generation of fine particles when the locking member 42 descends can be suppressed.

[0128] In addition, the through-hole-side contact surface 42b of the locking member 42 is inclined in the direction opposite to the lid-opening direction (negative X-axis direction), that is, toward the lid 33 side, with respect to the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the locking member 42 is not in contact with the lid 33 and the processing container 31. And when the rolling member 45a contacts the lid 33 or the processing container 31, the through-hole-side contact surface 42b rises due to the resistance received from the lid 33 or the processing container 31, and thus contacts the first inner surface 31f1 of the second through-hole 31f. Thus, when the locking member 42 rises and descends, the through-hole-side contact surface 42b of the locking member 42 is unlikely to contact the first inner surfaces 31e1, 31f1 of the processing container 31, and therefore, the generation of fine particles caused by their friction can be suppressed.

[0129] In addition, a resin member 48b (an example of the through-hole-side resin member) is provided at the lower end of the through-hole-side contact surface 42b where the possibility of contacting the processing container 31 is the highest. Therefore, even if the through-hole-side contact surface 42b contacts the processing container 31 (the first inner surface 31e1) when the locking member 42 rises or descends, there is no need to worry about the processing container 31 being cut. That is, it is difficult to generate metal fine particles.

[0130] In addition, the second surface 42a2 of the lid-side abutment surface 42a is inclined in the lid-opening direction (negative X-axis direction) with respect to the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the lid-side abutment surface 42a is not in contact with the lid 33 and the processing container 31. Therefore, when the locking member 42 is raised or lowered, even if the abutment surface 33a of the lid 33 flies out toward the lid-opening direction (negative X-axis direction) with respect to the second inner surfaces 31e2 and 31f2 of the processing container 31, it is difficult for the locking member 42 to come into contact with the lid 33. In addition, a resin member 48a (an example of a lid-side resin member) is provided at the upper end portion of the second surface 42a2. Therefore, even if the second surface 42a2 comes into contact with the lid 33, there is no need to worry about the lid 33 being cut. That is, it is difficult to generate metal particles.

[0131] In addition, it is sufficient that the second surface 42a2 is not inclined in the direction opposite to the lid-opening direction (positive X-axis direction) of the lid 33. Thus, the second surface 42a2 may also be parallel to the moving direction (Z-axis direction) of the locking member 42 by the lifting mechanism 43 in a state where the lid-side abutment surface 42a is not in contact with the lid 33.

[0132] 〔7. Exhaust structure for the transfer area〕

[0133] Next, return Figure 5A and Figure 5B , and the exhaust structure of the transfer area 182 will be described. As Figure 5A and Figure 5B shown, the transfer area 182 is covered by the housing 821. The housing 821 houses the lid 33 and the holder 32.

[0134] A first exhaust pipe 201 through which the atmosphere gas discharged from the housing 821 flows is connected to the housing 821. In addition, a second exhaust pipe 202 is connected to the second through-hole 31f via a buffer 223. The buffer 223 is a box-shaped member having an internal space larger than the internal space of the second through-hole 31f. The second exhaust pipe 202 is connected to a pump (not shown), and the atmosphere gas in the housing 821 is discharged via the buffer 223.

[0135] The second exhaust pipe 202 and the buffer 223 are provided to exhaust the moving space of the locking member 42, specifically, the first through-hole 31e, the second through-hole 31f, and the space between the first protrusion 31c and the second protrusion 31d, intensively. As described above, the locking mechanism 50 of the embodiment suppresses the generation of fine particles by taking measures such as providing rolling members 45a, 45b for the locking member 42, but it is also conceivable that fine particles are generated due to the cutting of the rolling members 45a, 45b. Even if such fine particles are generated, the second exhaust pipe 202 and the buffer 223 are used to exhaust the moving space of the locking member 42 intensively, so that the fine particles can be discharged efficiently to the outside of the transfer area 182. Thereby, for example, the waiting time in the case of waiting for the start of the next supercritical treatment until the fine particles become less is reduced, and an improvement in productivity is achieved.

[0136] In addition, in the supercritical drying process, the processing container 31 is in a high-temperature state of about 100 degrees, for example, and an upward air current is generated in the second through-hole 31f. Assuming that the second exhaust pipe 202 is directly connected to the second through-hole 31f, it is possible that the exhaust air current and the upward air current collide to cause turbulence of the air current. In contrast, by providing the buffer 223, the exhaust air current and the upward air current do not collide directly, so it is difficult to generate turbulence of the air current. Therefore, the fine particles can be discharged to the outside more efficiently.

[0137] As described above, the drying unit 18 of the embodiment is a substrate processing apparatus that processes a wafer W (an example of a substrate) in a high-pressure environment, and includes a processing container 31 (an example of a pressure vessel), a lid 33, and a locking mechanism 50. The processing container 31 has an opening 31b. The lid 33 closes the opening 31b. The locking mechanism 50 restricts the movement of the lid 33 in the opening direction due to the internal pressure of the processing container 31. In addition, the locking mechanism 50 includes a locking member 42 (an example of an abutting member), a lifting mechanism 43 (an example of a moving mechanism), and rolling members 45a, 45b. The locking member 42 abuts against the abutting surface 33a which is the surface on the side opposite to the sealing surface among the plurality of surfaces of the lid 33. The lifting mechanism 43 moves the locking member 42 in the direction along the abutting surface 33a. The rolling members 45a, 45b are provided on the abutting surfaces 42a, 42b of the locking member 42 that abut against the lid 33 or the processing container 31.

[0138] Therefore, according to the drying unit 18 of the embodiment, it is possible to suppress the generation of fine particles and at the same time restrict the movement of the lid 33 due to the internal pressure of the processing container 31.

[0139] 〔8. Modification Example〕

[0140] In addition to the above-described embodiments, the substrate processing system 1 described above is preferably implemented in various different forms. Therefore, other embodiments of the substrate processing system 1 will be described below.

[0141] In the above-described embodiment, an example of the case where the locking mechanism 50 has the following structure was described: The locking member 42 is passed through the first through-hole 31e and the second through-hole 31f formed above and below the processing container 31 with the lid 33 interposed therebetween to restrict the movement of the lid 33 in the opening direction. However, the structure of the locking mechanism is not limited to the above example.

[0142] Figure 8A and Figure 8B is a diagram showing a structural example of a locking mechanism of a modified example. For example, as Figure 8A shown, the drying unit 18A of the modified example includes a processing container 31A, a holding body 32A, and a lid 33A. The processing container 31A has an opening 31Ab at the upper part. The lid 33A is disposed above the processing container 31A and is moved in the vertical direction by a moving mechanism (not shown). A holding body 32A is provided on the processing container 31A side of the lid 33A, and the wafer W is horizontally held by the holding body 32A.

[0143] A supply unit 35A is provided in the processing container 31A, and a processing fluid is supplied into the processing space 31Aa via the supply unit 35A. In addition, a discharge unit 37A is provided in the processing container 31A, and the processing fluid is discharged from the processing space 31Aa via the discharge unit 37A.

[0144] The locking mechanism 50A includes: a locking member 42A formed in a bifurcated shape; and a moving mechanism 43A that moves the locking member 42A in the horizontal direction (that is, along the abutting surface 33Aa of the lid 33A).

[0145] Each of the opposing surfaces of the bifurcated portions of the locking member 42A is a lid-side abutting surface 42Aa that abuts against the abutting surface 33Aa of the lid 33A and a container-side abutting surface 42Ab that abuts against the bottom surface 31Ac of the processing container 31A.

[0146] A concave portion 46Aa is provided on the lid-side abutting surface 42Aa, and a rolling member 45Aa and a biasing member 47Aa are provided inside the concave portion 46Aa. Similarly, a concave portion 46Ab is provided on the container-side abutting surface 42Ab, and a rolling member 45Ab and a biasing member 47Ab are provided inside the concave portion 46Ab.

[0147] As Figure 8BAs shown, in the drying unit 18A, first, after the lid 33A is lowered by a moving mechanism (not shown) to seal the opening 31Ab of the processing container 31A, the moving mechanism 43A moves the locking member 42A in the horizontal direction (negative X-axis direction). As a result, the rolling members 45Aa and 45Ab come into contact with and roll on the contact surface 33Aa of the lid 33A and the bottom surface 31Ac of the processing container 31A, respectively, while the locking member 42A moves.

[0148] After that, by supplying the processing fluid to the processing space 31Aa via the supply unit 35A, the pressure in the processing space 31Aa rises, and the lid 33A moves upward due to the internal pressure of the processing container 31A. As a result, the rolling members 45Aa and 45Ab are all received in the recesses 46Aa and 46Ab against the acting forces of the biasing members 47Aa and 47Ab. The contact surface 33Aa of the lid 33A abuts against the lid-side contact surface 42Aa of the locking member 42A, and the bottom surface 31Ac of the processing container 31A abuts against the container-side contact surface 42Ab of the locking member 42A. As a result, the movement of the lid 33A in the opening direction (positive Z-axis direction) caused by the internal pressure of the processing container 31A is restricted by the locking mechanism 50A.

[0149] In this way, the locking mechanism 50A can also be configured to restrict the movement of the lid 33A in the opening direction by clamping the lid 33A and the processing container 31A from the lid 33A side and the processing container 31A side using the bifurcated locking member 42A.

[0150] Further effects and modification examples can be easily derived by those skilled in the art. Therefore, the broader forms of the present invention are not limited to the specific details and representative embodiments shown and described above. Thus, various changes can be made without departing from the spirit or scope of the general inventive concept defined by the appended claims and their equivalents.

Claims

1. A substrate processing apparatus that processes a substrate in a high-pressure environment, characterized in that, the substrate processing apparatus includes: a pressure vessel having an opening at the upper part; a lid that seals the opening; and a locking mechanism that restricts the movement of the lid in the opening direction caused by the internal pressure of the pressure vessel, the locking mechanism includes: a locking member having a cross-section formed in a bifurcated shape; and a moving mechanism that moves the locking member in the horizontal direction.

2. The substrate processing apparatus according to claim 1, characterized in that, the lid is disposed above the pressure vessel, and a holding member for horizontally holding the substrate is provided on the pressure vessel side of the lid.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, each of the opposite surfaces of the bifurcated portions of the locking member is provided with a lid-side contact surface that contacts the contact surface of the lid and a container-side contact surface that contacts the contact surface of the pressure vessel.

4. The substrate processing apparatus according to claim 3, characterized in that, a friction suppression member for suppressing friction with the lid is provided on the lid-side contact surface of each of the opposite surfaces of the bifurcated portions of the locking member, and a friction suppression member for suppressing friction with the pressure vessel is provided on the container-side contact surface of each of the opposite surfaces of the bifurcated portions of the locking member.

5. The substrate processing apparatus according to claim 4, characterized in that, the friction suppression member is a resin member.

6. The substrate processing apparatus according to claim 5, characterized in that, the locking member further includes: a recess formed in the lid-side contact surface and the container-side contact surface for accommodating the friction suppression member; and a biasing member provided in the recess, the biasing member biasing the friction suppression member toward the outside of the recess, the friction suppression member is accommodated in the recess in a state where a part thereof protrudes from the recess due to the action of the biasing member, and when pressed by the lid, it moves in the opening direction against the action of the biasing member and is completely accommodated in the recess.

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