Semiconductor green laser element

Abstract

The application discloses a semiconductor green laser element, which comprises, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer in sequence, wherein the upper waveguide layer and the upper limiting layer are provided with a topological phonon transition layer, and the topological phonon transition layer comprises a first topological phonon transition layer, a second topological phonon transition layer and a third topological phonon transition layer. The application realizes the synergistic regulation of phonon transport, reduces the phonon scattering of the laser element, enhances the lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces the heat accumulation of the active layer, reduces the temperature of the active layer, reduces the hole injection barrier and improves the hole injection efficiency, improves the overlap probability of the electron-hole wave function of the active layer, thereby strengthening the laser element, improving the aging light attenuation, the aging life and the reliability under the condition of high power and large current, and improving the lasing power and the slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a semiconductor green laser element. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] Lasers differ significantly from nitride semiconductor light-emitting diodes.

[0004] 1) Lasers are generated by stimulated emission of charge carriers. They have a small half-width at half-maximum and very high brightness. The output power of a single laser can be in the W range. In contrast, nitride semiconductor light-emitting diodes are spontaneously emitted, and the output power of a single light-emitting diode is in the mW range.

[0005] 2) The operating current density of the laser reaches KA / cm². 2 The efficiency is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect.

[0006] 3) Light-emitting diodes emit spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, lasers emit stimulated transition radiation, where the energy of the induced photon should be equal to the energy difference of the electron transition, producing coherent light that is identical to the induced photon.

[0007] 4) Different principles: Light emission diodes emit light by electrons and holes jumping to quantum wells or pn junctions under the action of external voltage, generating radiative recombination. Lasers, on the other hand, require certain lasing conditions to be met before they can emit light. This requires the carriers in the active region to be reversed, the stimulated emission light to oscillate back and forth in the resonant cavity, and the propagation in the gain medium to amplify the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) Large internal lattice mismatch and strain lead to strong polarization effect, and strong QCSE quantum confinement Stark effect limits the improvement of laser electro-lasing gain;

[0010] 2) Problems such as increased hole injection barrier and hole overflow from the active layer caused by lattice mismatch and thermal mismatch in the quantum well polarization electric field, non-uniform hole injection and low efficiency lead to severe electron-hole asymmetry mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, non-uniform carrier injection and gain, at the same time, the laser gain spectrum broadens and the peak gain decreases, resulting in an increase in laser threshold current and a decrease in slope efficiency.

[0011] 3) Non-radiative recombination loss and free carrier absorption in the active region of the laser chip generate a large amount of heat. At the same time, the resistance of the epitaxial and chip materials will generate Joule heat loss and carrier absorption loss under current injection. In addition, the low thermal conductivity of the chip material and poor heat dissipation performance lead to an increase in the temperature of the active layer, resulting in problems such as redshift of lasing wavelength, decrease in quantum efficiency, decrease in power, increase in threshold current, shortened lifetime and deterioration of reliability. Summary of the Invention

[0012] This invention proposes a semiconductor green laser element that achieves synergistic control of phonon transport, reduces phonon scattering, enhances lattice thermal conductivity, improves thermoelectric performance, enhances heat dissipation, reduces heat accumulation in the active layer, lowers the active layer temperature, reduces the hole injection barrier and improves hole injection efficiency, and increases the overlap probability of electron-hole wave functions in the active layer. This strengthens the laser element's ability to withstand high power and improve aging light attenuation, aging lifetime, and reliability under high current conditions, reduces the excitation threshold, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0013] The present invention provides a semiconductor green laser element, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, wherein a topological phonon transition layer is provided between the upper waveguide layer and the upper confinement layer.

[0014] The topological phonon transition layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0015] The topological phonon transition layer includes a first topological phonon transition layer, a second topological phonon transition layer, and a third topological phonon transition layer.

[0016] Preferably, the polarized optical phonon energy distribution of the first topological phonon transition layer has the function y = A + B*x. 2 / e x The polarized optical phonon energy distribution of the second topological phonon transition layer has the function y = C + D * log0. a The curve distribution of x (0 < a < 1), and the polarized optical phonon energy distribution of the third topological phonon transition layer have the function y = E + F*e. x The distribution of the cosx curve in the third quadrant; the polarized optical phonon energy of the first topological phonon transition layer is d, the polarized optical phonon energy of the second topological phonon transition layer is e, and the polarized optical phonon energy of the third topological phonon transition layer is f, where: 20≤e≤d≤f≤500(meV).

[0017] Preferably, the electron mobility distribution of the first topological phonon transition layer has the function y = G + H * lnx / e x The electron mobility distribution of the second topological phonon transition layer has the function y = I + J*log b The curve distribution of x(b>1), and the electron mobility distribution of the third topological phonon transition layer have the function y=K+L*e x / x 2 The second quadrant curve distribution; the electron mobility of the first topological phonon transition layer is g, the electron mobility of the second topological phonon transition layer is h, and the electron mobility of the third topological phonon transition layer is i, where: 10 ≤ i ≤ h ≤ g ≤ 10000 (cm²) 2 / Vsec).

[0018] Preferably, the longitudinal phonon velocity distribution of the first topological phonon transition layer has the function y = M + N*(e x +e -x ) / (e x -e -x The longitudinal phonon velocity distribution in the first quadrant and the second topological phonon transition layer has the function y = O + P * log b The x(b>1) curve distribution, the longitudinal phonon velocity distribution of the third topological phonon transition layer has the function y=Q+R*e x x 2 Curve distribution; the longitudinal phonon velocity of the first topological phonon transition layer is j, the longitudinal phonon velocity of the second topological phonon transition layer is k, and the longitudinal phonon velocity of the third topological phonon transition layer is l, where: 5E4≤j≤l≤k≤5E6 (cm / s).

[0019] Preferably, the transverse phonon velocity distribution of the first topological phonon transition layer has a first four-quadrant curve distribution of the function y = S + T * cosx / x, and the transverse phonon velocity distribution of the second topological phonon transition layer has a function y = U * V * log a The x(0<a<1) curve distribution, the transverse phonon velocity distribution of the third topological phonon transition layer has the function y=W+Z*(e x +e -x ) / (e x -e -x The curve distribution in the third quadrant; the transverse phonon velocity of the first topological phonon transition layer is m, the transverse phonon velocity of the second topological phonon transition layer is n, and the transverse phonon velocity of the third topological phonon transition layer is p, where: 5E4≤m≤p≤n≤5E6 (cm / s).

[0020] Preferably, the In / C element ratio distribution of the first topological phonon transition layer has a function y = A² + B² * lnx / x curve distribution; the Al / C element ratio distribution of the second topological phonon transition layer has a function y = C² + D² * log a x(0<a<1) curve distribution; the Al / C element ratio distribution of the third topological phonon transition layer has the function y=E2+F2*(e x +e -x ) / (e x -e -x The distribution of curves in the third quadrant.

[0021] Preferably, the In / H element ratio distribution of the first topological phonon transition layer has the function y = G² + H² * lnx / e x Curved distribution; the Al / H element ratio distribution of the second topological phonon transition layer has the function y = H² + J² * log₂ a x(0<a<1) curve distribution; the Al / H element ratio distribution of the third topological phonon transition layer has the function y=K2+L2*e x / cosx third quadrant curve distribution.

[0022] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. Any combination, with a thickness of 10–100 angstroms, and the barrier layer being any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10–200 angstroms.

[0023] Preferably, the lower confinement layer, lower waveguide layer, upper waveguide layer, and upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0024] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0025] Compared with the prior art, the semiconductor green laser element provided in this embodiment of the invention has the following advantages:

[0026] 1. The specific polarization optical phonon energy distribution and specific electron mobility distribution of the topological phonon transition layer introduce a new periodic potential field, transforming hyperbolic dispersion into elliptical dispersion, regulating topological phonon transitions, enhancing charge accumulation and valley degree of freedom accumulation in valley spin space, improving carrier scattering, reducing the hole injection barrier and improving hole injection efficiency, increasing the overlap probability of electron-hole wave functions in the active layer, achieving synergistic regulation of phonon transport, reducing phonon scattering of laser elements, thereby enhancing lattice thermal conductivity, improving the thermoelectric performance of laser elements, improving the heat dissipation performance of laser elements, improving quantum efficiency, reducing threshold current, and improving beam output and beam quality factor.

[0027] 2. The specific longitudinal and transverse phonon velocity distributions of the topological phonon transition layer regulate topological phonon transitions, enhance lattice thermal conductivity, reduce heat accumulation in the active layer, lower the temperature of the active layer, reduce the quantum confinement Stark effect caused by thermal mismatch in the active layer, reduce nonradiative recombination loss and the large amount of heat generated by free carrier absorption, reduce Joule heat loss and carrier absorption loss, and improve the heat dissipation performance of the laser. This enhances the laser element's ability to withstand high power and improves its aging light attenuation, aging lifetime, and reliability under high current conditions, lowers the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0028] 3. The specific elemental distribution of the topological phonon transition layer further enhances the new periodic potential field, regulates topological phonon transitions, enhances charge accumulation and valley degree of freedom accumulation in the valley spin space, improves carrier scattering, achieves synergistic regulation of phonon transport, reduces phonon scattering of the laser element, enhances lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces heat accumulation in the active layer, lowers the temperature of the active layer, and lowers the hole injection barrier and improves the hole injection efficiency, thereby increasing the overlap probability of the electron-hole wave function of the active layer. This strengthens the laser element's ability to withstand high power and improve aging light attenuation, aging lifetime, and reliability under high current conditions, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the structure of a semiconductor green laser element provided by the present invention.

[0030] Figure 2 The present invention provides a SIMS secondary ion mass spectrum of a semiconductor green laser element.

[0031] The diagram shows: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: topological phonon transition layer; 106a: first topological phonon transition layer; 106b: second topological phonon transition layer; 106c: third topological phonon transition layer. Detailed Implementation

[0032] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0033] To address the aforementioned issues, a semiconductor green laser element provided in this application will be described in detail and explained through the following specific embodiments.

[0034] Reference Figure 1-2 The present invention provides a semiconductor green laser element, which, from bottom to top, comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein a topological phonon transition layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0035] The topological phonon transition layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0036] The topological phonon transition layer 106 includes a first topological phonon transition layer 106a, a second topological phonon transition layer 106b, and a third topological phonon transition layer 106c.

[0037] The polarization optical phonon energy distribution of the first topological phonon transition layer 106a has the function y = A + B*x 2 / e x The polarized optical phonon energy distribution of the second topological phonon transition layer 106b exhibits a curve distribution, which is a function y = C + D * log aThe x(0<a<1) curve distribution and the polarized optical phonon energy distribution of the third topological phonon transition layer 106c have the function y=E+F*e. x The distribution of the cosx curve in the third quadrant; the polarized optical phonon energy of the first topological phonon transition layer 106a is d, the polarized optical phonon energy of the second topological phonon transition layer 106b is e, and the polarized optical phonon energy of the third topological phonon transition layer 106c is f, where: 20≤e≤d≤f≤500(meV).

[0038] The electron mobility distribution of the first topological phonon transition layer 106a has the function y = G + H * lnx / e x The electron mobility distribution of the second topological phonon transition layer 106b follows the function y = I + J*log b The distribution of the x(b>1) curve, and the electron mobility distribution of the third topological phonon transition layer 106c have the function y=K+L*e x / x 2 The second quadrant curve distribution; the electron mobility of the first topological phonon transition layer 106a is g, the electron mobility of the second topological phonon transition layer 106b is h, and the electron mobility of the third topological phonon transition layer 106c is i, where: 10 ≤ i ≤ h ≤ g ≤ 10000 (cm²) 2 / Vsec).

[0039] Therefore, it can be seen that the specific polarization optical phonon energy distribution and specific electron mobility distribution of the topological phonon transition layer 106 introduce a new periodic potential field, forming hyperbolic dispersion converted into elliptical dispersion, regulating topological phonon transitions, enhancing charge accumulation and valley degree of freedom accumulation in valley spin space, improving carrier scattering, reducing hole injection barrier and improving hole injection efficiency, increasing the overlap probability of electron-hole wave functions in active layer 103, realizing synergistic regulation of phonon transport, reducing phonon scattering of laser elements, thereby enhancing lattice thermal conductivity, improving the thermoelectric performance of laser elements, improving the heat dissipation performance of laser elements, improving quantum efficiency, reducing threshold current and improving beam output and beam quality factor.

[0040] The longitudinal phonon velocity distribution of the first topological phonon transition layer 106a has the function y = M + N*(e x +e -x ) / (e x -e -x The first quadrant curve distribution and the longitudinal phonon velocity distribution of the second topological phonon transition layer 106b have the function y = O + P * log b The x(b>1) curve distribution, the longitudinal phonon velocity distribution of the third topological phonon transition layer 106c has the function y=Q+R*e x x 2Curve distribution; the longitudinal phonon velocity of the first topological phonon transition layer 106a is j, the longitudinal phonon velocity of the second topological phonon transition layer 106b is k, and the longitudinal phonon velocity of the third topological phonon transition layer 106c is l, where: 5E4≤j≤l≤k≤5E6 (cm / s).

[0041] The transverse phonon velocity distribution of the first topological phonon transition layer 106a has a first-fourth-quadrant curve distribution of the function y = S + T * cosx / x, and the transverse phonon velocity distribution of the second topological phonon transition layer 106b has a function y = U * V * log a The x(0<a<1) curve distribution, the transverse phonon velocity distribution of the third topological phonon transition layer 106c has the function y=W+Z*(e x +e -x ) / (e x -e -x The curve distribution in the third quadrant; the transverse phonon velocity of the first topological phonon transition layer 106a is m, the transverse phonon velocity of the second topological phonon transition layer 106b is n, and the transverse phonon velocity of the third topological phonon transition layer 106c is p, where: 5E4≤m≤p≤n≤5E6 (cm / s).

[0042] Therefore, the specific longitudinal and transverse phonon velocity distributions of the topological phonon transition layer 106 regulate topological phonon transitions, enhance lattice thermal conductivity, reduce heat accumulation in the active layer, lower the temperature of the active layer 103, reduce the quantum confinement Stark effect caused by thermal mismatch in the active layer 103, reduce nonradiative recombination loss and the large amount of heat generated by free carrier absorption, reduce Joule heat loss and carrier absorption loss, and improve the heat dissipation performance of the laser. This enhances the laser element's ability to withstand high power and improve its aging light attenuation, aging lifetime, and reliability under high current conditions, lowers the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0043] The In / C element ratio distribution of the first topological phonon transition layer 106a has a function y = A² + B² * lnx / x curve distribution; the Al / C element ratio distribution of the second topological phonon transition layer 106b has a function y = C² + D² * log a x(0<a<1) curve distribution; the Al / C element ratio distribution of the third topological phonon transition layer 106c has the function y=E2+F2*(e x +e -x ) / (e x -e -x The distribution of curves in the third quadrant.

[0044] The In / H element ratio distribution of the first topological phonon transition layer 106a has the function y = G² + H² * lnx / e x Curved distribution; the Al / H elemental ratio distribution of the second topological phonon transition layer 106b has the function y = H² + J² * log₂. a x(0<a<1) curve distribution; the Al / H element ratio distribution of the third topological phonon transition layer 106c has the function y=K2+L2*e x / cosx third quadrant curve distribution.

[0045] Therefore, the specific elemental distribution of the topological phonon transition layer 106 further enhances the new periodic potential field, regulates topological phonon transitions, enhances charge accumulation and valley degree of freedom accumulation in the valley spin space, improves carrier scattering, achieves synergistic regulation of phonon transport, reduces phonon scattering of the laser element, enhances lattice thermal conductivity, improves the thermoelectric performance of the laser element, improves the heat dissipation performance of the laser element, reduces heat accumulation in the active layer 103, lowers the temperature of the active layer, and lowers the hole injection barrier and improves the hole injection efficiency, thereby increasing the overlap probability of the electron-hole wave function of the active layer. This strengthens the laser element's ability to withstand high power and improve aging light attenuation, aging lifetime and reliability under high current conditions, lowers the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0046] The table below shows a comparison of data between a conventional laser and the laser of this invention.

[0047] Blue laser - Project Traditional lasers Laser of the present invention range of change <![CDATA[Beam quality factor M 2 > 3.7 2.14 73％ Slope efficiency (W / A) 0.8 1.37 71％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.79 -67％ Optical power (W) 4.1 6.8 66％ 1000H aging and light decay 22％ 3.50％ -84％

[0048] In this invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The material can be of any type or combination thereof, with a thickness of 10 to 100 angstroms. The barrier layer can be any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0049] In this invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0050] In this invention, the substrate 100 includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0051] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor green laser element, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that, There is a topological phonon transition layer (106) between the upper waveguide layer (104) and the upper confinement layer (105). The topological phonon transition layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. The topological phonon transition layer (106) includes a first topological phonon transition layer (106a), a second topological phonon transition layer (106b), and a third topological phonon transition layer (106c) arranged sequentially from bottom to top. The polarization optical phonon energy distribution of the first topological phonon transition layer (106a) has the function y1=A+B*x 2 / e x The polarized optical phonon energy distribution of the second topological phonon transition layer (106b) exhibits a curve distribution with the function y² = C + D * log₂. a The x(0<a<1) curve distribution and the polarized optical phonon energy distribution of the third topological phonon transition layer (106c) have the function y3=E+F*e. x The distribution of the cosx curve in the third quadrant; the polarized optical phonon energy of the first topological phonon transition layer (106a) is d, the polarized optical phonon energy of the second topological phonon transition layer (106b) is e, and the polarized optical phonon energy of the third topological phonon transition layer (106c) is f, where: 20meV≤e≤d≤f≤500meV; The electron mobility distribution of the first topological phonon transition layer (106a) has the function y4=G+H*lnx / e x The electron mobility distribution of the second topological phonon transition layer (106b) follows the function y5=I+J*log b The distribution of the x(b>1) curve, and the electron mobility distribution of the third topological phonon transition layer (106c) have the function y6=K+L*e x / x 2 The second quadrant curve distribution; the electron mobility of the first topological phonon transition layer (106a) is g, the electron mobility of the second topological phonon transition layer (106b) is h, and the electron mobility of the third topological phonon transition layer (106c) is i, where: 10cm 2 / Vsec≤i≤h≤g≤10000cm 2 / Vsec.

2. The semiconductor green laser element according to claim 1, characterized in that, The active layer (103) is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. Any combination, with a thickness of 10~100 angstroms, and the barrier layer being any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10~200 angstroms.

3. A semiconductor green laser element according to claim 1, characterized in that, The lower confinement layer (101), lower waveguide layer (102), upper waveguide layer (104), and upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

4. A semiconductor green laser element according to claim 1, characterized in that, The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Composite substrate, sapphire / SiO2 / SiN x The composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, or LiAlO2 / LiGaO2 composite substrate.

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