A GaN-based light emitting diode epitaxial structure and a preparation method thereof

By introducing a Zn source during the growth of a P-type AlGaN electron blocking layer and constructing a Zn concentration gradient distribution, the problems of low hole injection efficiency and poor crystal quality in GaN-based LEDs were solved. This achieved synergistic optimization of efficient hole transport and strong electron blocking, thereby improving the photoelectric performance and reliability of LEDs.

CN122373559APending Publication Date: 2026-07-10JIANGXI ZHAO CHI SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGXI ZHAO CHI SEMICON CO LTD
Filing Date
2026-06-10
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

Existing GaN-based LEDs with P-type AlGaN electron blocking layers suffer from low hole injection efficiency, poor crystal quality, and the inability to synergistically optimize electron blocking and hole transport. This results in severe drooping of the device under high current, failing to meet the industrial upgrading needs for high-efficiency and high-power LEDs.

Method used

By introducing a Zn source throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the growth direction is constructed. Through the synergistic regulation of Zn concentration gradient and Al composition, the interface hole injection peak barrier is eliminated, the Al atom lattice incorporation efficiency is improved, and the conduction band and valence band structure are optimized.

Benefits of technology

Significantly improves hole injection efficiency by 35%~50%, improves AlGaN crystal quality, reduces device operating voltage, significantly suppresses efficiency droop effect, increases device optical output power by 28%~32%, reduces efficiency droop by 45%~52%, and achieves excellent performance with high optical efficiency and low driving voltage.

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Abstract

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.
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