Photoelectric device, contact hole preparation method and optical equipment

Abstract

The invention provides a photoelectric device, a contact hole preparation method and optical equipment, and relates to the technical field of optical signal processing. The photoelectric device comprises a substrate, a functional structure and a connecting structure, the functional structure is arranged on the substrate; contact holes are formed in the functional surfaces, away from the substrate, of the functional structures, and the functional structures are in contact connection with the connecting structures through the contact holes; wherein the contact hole is made of a low contact resistance material; the functional structure is used for processing optical signals, and the connecting structure is used for connecting the functional structure and an external device. The method comprises the following steps: performing waveguide etching on a functional structure of the photoelectric device to form a waveguide structure; performing doping treatment on the waveguide structure to a doped region; growing a waveguide covering layer in the doped region to obtain a growth region, and determining a contact hole region in the growth region; and depositing a low contact resistance material in the contact hole region to obtain a contact hole.

Description

Technical Field

[0001] This application relates to the technical field of optical signal processing, and more specifically, to an optoelectronic device, a method for preparing contact holes, and an optical device. Background Art

[0002] Silicon photonics technology is widely used in various information transmission scenarios due to its high integration, low cost, and mature process. With the increasing demand for information transmission, the bandwidth requirements of optoelectronic devices such as silicon photonic modulators and detectors are constantly increasing. The high-speed requirements pose higher demands on the contact resistance of optoelectronic devices and the electrical reliability of the contact layer.

[0003] Currently, aluminum, copper, or tungsten is usually directly used to make contact with optoelectronic devices such as optical modulators or optical detectors. However, this structure has a large contact resistance, resulting in a lower working bandwidth. Moreover, the current contact design has a high risk of electrical reliability, leading to poor working performance of optoelectronic devices and unable to meet the current information transmission requirements. Summary of the Invention

[0004] In view of this, the purpose of the embodiments of this application is to provide an optoelectronic device, a method for preparing contact holes, and an optical device to improve the problem of poor working performance of optoelectronic devices existing in the prior art.

[0005] To solve the above problems, in a first aspect, the embodiments of this application provide an optoelectronic device, which includes: a substrate, a functional structure, and a connection structure;

[0006] The functional structure is disposed on the substrate;

[0007] Contact holes are provided on the functional surface of the functional structure away from the substrate, and the functional structure is in contact connection with the connection structure through the contact holes; wherein, the contact holes are made of a low-contact-resistance material;

[0008] The functional structure is used for processing optical signals, and the connection structure is used for connecting the functional structure with external devices.

[0009] In the above implementation process, the optoelectronic device may include a functional structure for processing optical signals and a connection structure for connecting the functional structure with external devices to achieve signal transmission. Contact holes made of a low-contact-resistance material may be provided on the functional structure, and the functional structure is connected to the connection structure through the contact holes to reduce the contact resistance when the functional structure is in direct contact with the connection structure, and reduce the electrical reliability risk during contact, improve the working bandwidth of the optoelectronic device, be applicable to various different types of optoelectronic devices, optimize the working performance of various optoelectronic devices, and meet the current various information transmission requirements through optoelectronic devices with high-speed performance.

[0010] Optionally, the low contact resistance material includes: metal germanide.

[0011] In the above implementation process, the low contact resistance material may include metal germanide. Compared with conventional contact metals, metal germanide has a smaller contact resistance and higher electrical reliability, effectively improving the working bandwidth of the optoelectronic device and optimizing the working performance of the optoelectronic device by reducing the contact resistance.

[0012] Optionally, in the stacking direction of the substrate and the functional structure, the height of the low contact resistance material is greater than or equal to 3 nm.

[0013] In the above implementation process, in the stacking direction of the substrate and the functional structure, the height of the low contact resistance material can be set to be greater than or equal to 3 nm, so that the contact hole has sufficient material thickness, effectively improving the stability and reliability of the contact hole, thereby reducing the adverse situation that the connection structure is in direct contact with the functional structure due to the too thin contact hole during use, so that the contact hole can provide a stable low contact resistance.

[0014] Optionally, the functional structure includes: germanium or germanium silicon.

[0015] In the above implementation process, the functional structure in optoelectronic devices such as optical modulators or photodetectors may include materials such as germanium or germanium silicon to perform various processes on optical signals. Germanium materials can increase the refractive index of optical signals, improve the optoelectronic conversion efficiency, and enhance the nonlinear effect. Germanium silicon materials can broaden the spectral response range, increase the response rate, reduce the dark current, and enhance the thermal stability of optoelectronic devices.

[0016] Optionally, in the stacking direction of the substrate and the functional structure, the height range of the germanium or germanium silicon is 0.08 - 4.5 μm.

[0017] In the above implementation process, in the stacking direction of the substrate and the functional structure, the height range of the germanium or germanium silicon material can be set to 0.08 - 4.5 μm, which can minimize the volume of the optoelectronic device while enabling the functional structure to have sufficient thickness to achieve normal optical signal processing functions.

[0018] Optionally, when the optoelectronic device is a horizontal optoelectronic device, two contact holes are provided on the functional surface, and the two contact holes are arranged on both sides of the target end of the functional structure, and the functional structure is in contact connection with the two connection structures through the two contact holes.

[0019] In the above implementation process, if the optoelectronic device is a horizontal optoelectronic device for processing optical signals in the horizontal direction, two contact holes can be provided on the functional surface of the functional structure. Moreover, considering the target end on the functional structure, the two contact holes are respectively arranged on both sides of the target end, so that the functional structure can be in contact connection with the corresponding two connection structures through the two contact holes, perform corresponding signal transmission, and realize corresponding functions such as detection or modulation, effectively improving the accuracy and stability when processing optical signals in the horizontal direction.

[0020] Optionally, when the optoelectronic device is a vertical optoelectronic device, a single contact hole is provided on the functional surface, the contact hole is arranged on the target end of the functional structure, and the functional structure is in contact connection with the connection structure through the contact hole.

[0021] In the above implementation process, if the optoelectronic device is a vertical optoelectronic device that works based on the instantaneous photoelectric effect, a single contact hole can be provided on the functional surface of the functional structure. Moreover, considering the target end on the functional structure, the contact hole can be directly arranged on the target end, so that the functional structure can be in contact connection with the corresponding connection structure through the contact hole, perform corresponding signal transmission, and realize corresponding functions such as detection or modulation, effectively improving the response speed of the optoelectronic device.

[0022] Optionally, the aperture parameter of the contact hole corresponds to the end face parameter of the contact end of the connection structure;

[0023] The aperture parameter is set based on the transmission performance requirements of the optoelectronic device.

[0024] In the above implementation process, the aperture parameter of the contact hole can be set in association with the end face parameter of the contact end where the connection structure is connected to the contact hole, so as to reduce the adverse situation where the edge of the connection structure directly contacts the functional structure, and further reduce unnecessary contact resistance. Moreover, the aperture parameter of the contact hole can also be set according to the actual transmission performance requirements of the optoelectronic device, providing higher-speed and higher electrical reliability performance for the optoelectronic device.

[0025] In a second aspect, an embodiment of the present application further provides a method for preparing a contact hole, and the method includes:

[0026] Performing waveguide etching on the functional structure of the optoelectronic device to form a waveguide structure;

[0027] Performing doping treatment on the waveguide structure to obtain a doped region;

[0028] Growing a waveguide cover layer in the doped region to obtain a growth region, and determining a contact hole region in the growth region;

[0029] Deposit a low contact resistance material in the contact hole region to obtain the contact hole.

[0030] In the above implementation process, corresponding contact holes can be prepared on the functional structure of the optoelectronic device. A waveguide structure is formed on the functional surface of the functional structure by waveguide etching, and then the electrical properties of the material are changed by doping to obtain a corresponding doped region. Then, a waveguide covering layer is grown on the doped region to protect the waveguide and optimize the required optical properties, obtaining a corresponding generated region. The corresponding contact hole region is determined in the grown region, and finally, a low contact resistance material is deposited in the opened contact hole region to obtain the corresponding contact hole. Contact holes with a lower contact resistance can be prepared on the functional structure of the optoelectronic device through waveguide etching, doping, waveguide covering layer generation, metal deposition, etching, etc., so as to reduce the magnitude of the contact resistance in the optoelectronic device, reduce the risk of electrical reliability during contact, increase the working bandwidth of the optoelectronic device, and be applicable to various different types of optoelectronic devices.

[0031] In a third aspect, an embodiment of the present application further provides an optical device, and the optical device includes the optoelectronic device described in any one of the above.

[0032] In summary, the embodiments of the present application provide an optoelectronic device, a method for preparing a contact hole, and an optical device. By providing the contact hole, the magnitude of the contact resistance when the functional structure is in direct contact with the connection structure is reduced, the risk of electrical reliability during contact is reduced, the working bandwidth of the optoelectronic device is increased, it is applicable to various different types of optoelectronic devices, the working performance of various optoelectronic devices is optimized, and various current information transmission requirements are met by optoelectronic devices with high-speed performance. Description of the Drawings

[0033] To more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments of the present application. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation of the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0034] Figure 1 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0035] Figure 2 It is a schematic structural diagram of a horizontal optoelectronic device provided by an embodiment of the present application;

[0036] Figure 3 It is a schematic structural diagram of a vertical optoelectronic device provided by an embodiment of the present application;

[0037] Figure 4Schematic flow chart of a contact hole preparation method provided by an embodiment of the present application.

[0038] Icon: 110 - Substrate; 120 - Functional structure; 130 - Connection structure; 121 - Contact hole; A - Stacking direction; 122 - Target end. Detailed implementation manners

[0039] Next, the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the embodiments of the present application.

[0040] In existing optoelectronic devices, aluminum, copper, or tungsten is usually used as a contact material to directly contact optoelectronic devices such as optical modulators or photodetectors. However, the contact resistance of this structure is large, resulting in a lower working bandwidth. Moreover, the current contact design has a high risk of electrical reliability, resulting in poor working performance of the optoelectronic devices and unable to meet the current information transmission requirements.

[0041] To solve the above problems, the present application provides an optoelectronic device. The optoelectronic device can include various types of devices such as optical bars directly, photodetectors, and optical receivers. A photodetector is a device that can sense optical signals, and the photon particles contained therein are a type of electromagnetic energy, which can convert incident light (ultraviolet light, visible light, or infrared light, etc.) into electrical signals. An optical modulator can convert electrical signals into optical signals, or modulate the intensity, phase, polarization, etc. of optical signals, thereby realizing information transmission. An optical receiver can realize the function of photoelectric conversion, that is, convert the received optical signal into an electrical signal. The optoelectronic device can be arranged in various types of optical devices, such as optical measurement devices such as spectrometers and optical power meters, as well as devices such as display devices, lasers, and interferometers.

[0042] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application. The optoelectronic device can include: a substrate 110, a functional structure 120, and a connection structure 130.

[0043] Optionally, the substrate 110 can be set as a corresponding silicon substrate structure, and the silicon substrate structure can include multiple layers such as substrate silicon, buried oxide layer, and top silicon. The connection structure 130 can include various types of conventional metals, such as metals or alloys with electrical connection functions such as aluminum, copper, or tungsten.

[0044] Among them, the functional structure 120 is disposed on the substrate 110. A contact hole 121 is disposed on the functional surface of the functional structure 120 away from the substrate 110. The functional structure 120 is in contact connection with the connection structure 130 through the contact hole 121. The functional structure 120 is used for processing optical signals, and the connection structure 130 is used for connecting the functional structure 120 with external devices.

[0045] Exemplarily, the external device may include a device connected to an optoelectronic device, such as various types of devices including a light source, a signal amplifier, a signal filter, an optical coupler, an optical fiber, an optical attenuator, an optical switch, an optoelectronic converter, etc. The specific device type is determined according to the type of the optoelectronic device and the application scenario.

[0046] Optionally, in different types of optoelectronic devices, the contact holes 121 disposed on the functional surface of the functional structure 120 are different. For example, in an optical modulator, the functions of the contact hole 121 are mainly reflected in the following aspects: Electrical signal transmission: An electrical connection between the connection structure 130 and the functional structure 120 is realized through the contact hole 121. The connection structure 130 can transmit an electrical signal into the functional structure 120 to control the working state of the optical modulator; Thermal management: In a high-speed and high-power optical modulator, the contact hole 121 can also be used for heat dissipation. The connection structure 130 can transfer heat to the functional structure 120 and the substrate 110 through the contact hole 121, and then dissipate the heat through heat conduction; Mechanical stability: The contact hole 121 can also provide additional mechanical support to enhance the structural stability of the optical modulator. In a photodetector, the functions of the contact hole 121 are mainly reflected in the following aspects: The contact hole 121 can serve as a channel for photocurrent conduction to realize signal transmission between the connection structure 130 and the functional structure 120; The cathode and anode of the photodetector can also be connected to an external circuit through the connection of the contact hole 121 with the connection structure 130; Moreover, between the cathode and anode of the photodetector, the setting of the contact hole 121 can cooperate with structures such as shallow trench isolation (STI) to prevent breakdown between device electrodes and protect the normal operation of the device.

[0047] Optionally, if the contact hole 121 is too small, it may cause incomplete metal filling or form a high-resistance contact. If the contact hole 121 is too large, it may increase parasitic capacitance and leakage current. The position of the contact hole 121 will affect signal transmission. Therefore, the position of the contact hole 121 on the functional surface, the number and size of the contact holes 121, etc. can all be set according to the type and requirements of the actual optoelectronic device.

[0048] It should be noted that the contact hole 121 is made of a material with low contact resistance. Exemplarily, the material with low contact resistance may include: metal germanides, such as cobalt germanide, copper germanide, nickel germanide, and other materials. Compared with conventional contact metals, metal germanides have a smaller contact resistance and higher electrical reliability, effectively improving the working bandwidth of optoelectronic devices and optimizing the working performance of optoelectronic devices by reducing the contact resistance.

[0049] In Figure 1 In the illustrated embodiment, the functional structure 120 is connected to the connection structure 130 through the contact hole 121, so as to reduce the magnitude of the contact resistance when the functional structure 120 is in direct contact with the connection structure 130, reduce the risk of electrical reliability during contact, improve the working bandwidth of optoelectronic devices, be applicable to various different types of optoelectronic devices, optimize the working performance of various optoelectronic devices, and meet various current information transmission requirements through optoelectronic devices with high-speed performance.

[0050] It should be noted that in the stacking direction A of the substrate 110 and the functional structure 120, the height of the material with low contact resistance is greater than or equal to 3 nm. For example, the height of germanium or metal germanide is set to 20 nm, etc., so that the contact hole 121 has a sufficient material thickness, effectively improving the stability and reliability of the contact hole 121, thereby reducing the adverse situation of direct contact between the connection structure 130 and the functional structure 120 caused by the too thin contact hole 121 during use, so that the contact hole 121 can provide a stable low contact resistance.

[0051] Optionally, the functional structure 120 in optoelectronic devices such as optical modulators or photodetectors may include: materials such as germanium or germanium silicon to perform various processes on optical signals. Germanium materials can increase the refractive index of optical signals, improve the optoelectronic conversion efficiency, and enhance the nonlinear effect. Germanium silicon materials can broaden the spectral response range, increase the response rate, reduce the dark current, and enhance the thermal stability of optoelectronic devices.

[0052] It should be noted that in optoelectronic devices such as optical modulators or photodetectors, germanium can increase the refractive index of optical signals, thereby increasing the propagation speed of optical signals in optoelectronic devices. Moreover, germanium has good optoelectronic conversion characteristics, can efficiently convert optical signals into electrical signals, and effectively improve the sensitivity and response speed of photodetectors. In some optical modulators, it is necessary to utilize the nonlinear effect of materials to modulate optical signals. The content of germanium has a significant impact on the nonlinear characteristics of optical fibers. An appropriate germanium content can enhance the nonlinear effect, thereby improving the performance of optical modulators. When the functional structure 120 is made of germanium-silicon material, the doping ratio of the germanium-silicon material can also be set. For example, the silicon doping ratio in germanium-silicon is less than or equal to 5%. The germanium-silicon alloy combines the advantages of germanium and silicon, has a wider spectral response range, and can enable optoelectronic devices such as optical modulators and photodetectors to respond to optical signals in a wider wavelength range, thereby improving the applicability and flexibility of the devices. In addition, the germanium-silicon alloy has a high electron mobility, which helps to increase the transmission speed of carriers inside optoelectronic devices, thereby improving the response rate and working efficiency of optoelectronic devices. In photodetectors, germanium-silicon can also reduce the dark current level, thereby improving the signal-to-noise ratio and sensitivity of the detector. The germanium-silicon alloy has good thermal stability and can maintain stable performance at higher temperatures. Germanium-silicon materials can work in harsh environments and also improve the reliability and service life of devices.

[0053] It should be noted that in the stacking direction A of the substrate 110 and the functional structure 120, the height range of germanium or germanium-silicon can be set to 0.08 - 4.5 μm, such as 1 μm, etc., which can minimize the volume of optoelectronic devices while enabling the functional structure 120 to have sufficient thickness to achieve normal optical signal processing functions.

[0054] Optionally, please refer to Figure 2 , Figure 2 , which is a schematic structural diagram of a horizontal optoelectronic device provided by an embodiment of the present application. The horizontal optoelectronic device is an optoelectronic device for processing optical signals in the horizontal direction, such as a horizontal photodetector. When the optoelectronic device is a horizontal optoelectronic device, two contact holes 121 can be provided on the functional surface. The two contact holes 121 can be provided on both sides of the target end 122 of the functional structure 120. The functional structure 120 is in contact connection with two connection structures 130 through the two contact holes 121. Considering the target end 122 on the functional structure 120, the two contact holes 121 are respectively provided on both sides of the target end 122, so that the functional structure 120 can be in contact connection with the corresponding two connection structures 130 through the two contact holes 121, perform corresponding signal transmission, and achieve corresponding detection or modulation functions, effectively improving the accuracy and stability when processing horizontal optical signals.

[0055] Optionally, in a horizontally structured optoelectronic device, the position of the contact hole 121 is typically on the left and right sides of the target end 122 of the core optoelectronic response structure, such as the functional structure 120. A voltage is applied to the optoelectronic device through the contact hole 121 to set up the electric field in the optoelectronic response structure. The resistance at the contact hole 121 of the optoelectronic device directly affects the strength of the electric field in the optoelectronic response structure and the performance of the optoelectronic response structure. Therefore, the smaller the resistance of the contact hole 121, the stronger the electric field in the optoelectronic response structure and the better the response effect.

[0056] Optionally, please refer to Figure 3 , Figure 3 which is a schematic structural diagram of a vertical optoelectronic device provided by an embodiment of the present application. The vertical optoelectronic device is an optoelectronic device that operates based on the instantaneous optoelectronic effect, such as a vertical photodetector, etc. When the optoelectronic device is a vertical optoelectronic device, a single contact hole 121 can be provided on the functional surface. The contact hole 121 can be provided on the target end 122 of the functional structure 120, and the functional structure 120 is in contact connection with the connection structure 130 through the contact hole 121. Considering the target end 122 on the functional structure 120, the contact hole 121 can be directly provided on the target end 122 so that the functional structure 120 can be in contact connection with the corresponding connection structure 130 through the contact hole 121 to perform corresponding signal transmission and realize corresponding functions such as detection or modulation, effectively improving the response speed of the optoelectronic device.

[0057] Optionally, in a vertically structured optoelectronic device, the position of the contact hole 121 is typically on the upper and lower sides of the target end 122 of the core optoelectronic response structure, such as the functional structure 120. When the contact hole 121 is located on the lower side, it is usually on the left and right sides of the lower part of the optoelectronic response structure. A voltage is applied to the optoelectronic device through the contact hole 121 to set up the electric field in the optoelectronic response structure. The resistance at the contact hole 121 of the optoelectronic device directly affects the strength of the electric field in the optoelectronic response structure and the performance of the optoelectronic response structure. The smaller the resistance of the contact hole 121, the stronger the electric field in the optoelectronic response structure and the better the response effect.

[0058] It should be noted that the aperture parameters of the contact hole 121 correspond to the end face parameters of the contact end of the connection structure 130. The aperture parameters can include the hole diameter, hole radius, etc. of the contact hole 121, and the end face parameters can include the end face diameter, end face radius, etc. of the contact end. The correlation between the aperture parameters of the contact hole 121 and the end face parameters of the contact end of the connection structure 130 connected to the contact hole 121 can be set. For example, the end face diameter of the contact end can be set to a parameter with the same numerical value as the hole diameter of the contact hole 121 to reduce the adverse situation of the edge of the connection structure 130 directly contacting the functional structure 120 and further reduce the unnecessary contact resistance.

[0059] Moreover, considering the impact of the size of the contact hole 121 on signal transmission, the aperture parameter is set based on the transmission performance requirements of the optoelectronic device, and the aperture parameter can also be set according to the actual transmission performance requirements of the optoelectronic device. For example, when the transmission performance requirement of the optoelectronic device is a high-speed performance requirement, a smaller aperture parameter can be set to provide a higher-speed and more electrically reliable performance for the optoelectronic device.

[0060] Please refer to Figure 4 , Figure 4 which is a schematic flowchart of a method for preparing a contact hole provided by an embodiment of the present application. The method may include steps S210-S240.

[0061] Step S210: Perform waveguide etching on the functional structure of the optoelectronic device to form a waveguide structure.

[0062] Among them, corresponding contact holes can be prepared on the functional structure of the optoelectronic device. A waveguide structure is formed on the functional surface of the functional structure by means of waveguide etching.

[0063] Exemplarily, the required waveguide shape and size can be etched on the functional structure as the corresponding waveguide structure by dry etching or wet etching. For example, dry etching using ICP (Inductively Coupled Plasma) can remove materials through ions and free radicals in the plasma, providing high-precision etching. Chemical solutions of various types can also be used to remove materials to improve the etching efficiency.

[0064] It should be noted that during the waveguide etching process, the etching depth and sidewall straightness need to be strictly controlled to ensure that the formed waveguide structure meets the design requirements.

[0065] Step S220: Perform doping treatment on the waveguide structure to obtain a doped region.

[0066] Among them, the electrical properties of the material can be changed by doping to obtain the corresponding doped region.

[0067] Exemplarily, light doping can form a thinner region of the PN junction, which helps to control the turn-on and turn-off characteristics of the device. Heavy doping can form a resistance part in contact with the metal, which helps to reduce the contact resistance and optimize the performance of the device. The doped material can be selected according to the actual situation and requirements, and the selected impurity can be incorporated into the waveguide structure in a specific manner using heavy doping.

[0068] Step S230: Grow a waveguide covering layer in the doped region to obtain a growth region, and determine a contact hole region in the growth region.

[0069] Among them, waveguide cladding growth can be carried out on the doped region to protect the waveguide and optimize the required optical performance, obtaining a corresponding growth region, and determining a corresponding contact hole region in the growth region.

[0070] Exemplarily, the waveguide cladding is a layer of material grown above the waveguide structure for protecting the waveguide and providing the required optical performance. It can be achieved by means such as chemical vapor deposition (CVD) or molecular beam epitaxy (MBE). For example, in the case of chemical vapor deposition, gaseous precursors can be used to undergo chemical reactions on the chip surface to generate the required material layer, which is suitable for large-area and uniform growth. In the case of molecular beam epitaxy, under ultra-high vacuum conditions, molecular beams are used to deposit materials layer by layer onto the chip surface, capable of providing high-precision and low-defect-density growth. The material type and thickness of the waveguide cladding can be selected and designed according to specific application requirements.

[0071] Step S240, depositing a low-contact-resistance material in the contact hole region to obtain a contact hole.

[0072] Among them, in the opened contact hole region, a low-contact-resistance material can be deposited to obtain a corresponding contact hole.

[0073] Exemplarily, the contact hole region can be opened first by means such as photolithography or etching to form a channel for contacting the metal electrode on the functional structure. The required pattern can be transferred to the surface of the functional structure using photoresist and exposure equipment, or specific etching techniques can be used to remove the exposed material layer to form the opened contact hole region. In the opened contact hole region, a low-contact-resistance material such as metal germanide can be deposited first by chemical vapor deposition, physical vapor deposition or other advanced deposition techniques, and an appropriate etching method can be selected for etching according to the specific material and properties of the metal germanide to remove the unnecessary part of the metal germanide to form the contact hole with the required pattern and structure.

[0074] It should be noted that the connection structure can be arranged on the surface of the contact hole far from the functional structure by means of metal deposition.

[0075] In several embodiments provided in this application, it should be understood that the disclosed device can also be implemented in other ways. The structural embodiments described above are merely illustrative. For example, the block diagrams in the drawings show the possible architectures, functions, and operations of the device according to multiple embodiments of this application. In this regard, each block in the block diagram can represent a module, a program segment, or a part of code, and the module, program segment, or part of code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order from that marked in the drawings. For example, two consecutive blocks can actually be executed substantially in parallel, and they can sometimes be executed in the reverse order, depending on the functions involved. It should also be noted that each block in the block diagram, as well as combinations of the block diagrams, can be implemented by a dedicated hardware-based system that performs the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

[0076] In addition, the functional modules in each embodiment of this application can be integrated together to form an independent part, or each module can exist alone, or two or more modules can be integrated to form an independent part.

[0077] If the above functions are implemented in the form of software functional modules and sold or used as an independent product, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a part of this technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in each embodiment of this application. The aforementioned storage medium includes: various media such as USB flash drives, mobile hard disks, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disks, or optical discs that can store program codes.

[0078] The above description is only for the embodiments of this application and is not intended to limit the protection scope of this application. For those skilled in the art, this application can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of this application shall be included in the protection scope of this application. It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0079] As described above, this is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application.

[0080] It should be noted that in this text, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, the elements defined by the statement "including..." do not exclude the existence of additional identical elements in the process, method, article or device including the said elements.

Claims

1. A photoelectric device, characterized in that: The optoelectronic device comprises: a substrate, a functional structure and a connection structure; The functional structure is disposed on the substrate; A contact hole is provided on the functional surface of the functional structure away from the substrate, and the functional structure is in contact with the connection structure through the contact hole; wherein the contact hole is provided with a low contact resistance material; The functional structure is used to process the optical signal, and the connection structure is used to connect the functional structure with an external device.

2. The optoelectronic device according to claim 1, characterized in that: in, The low contact resistance material includes: germanium metal.

3. The optoelectronic device according to claim 2, characterized in that: in, In the stacking direction of the substrate and the functional structure, the height of the low contact resistance material is greater than or equal to 3 nm.

4. The optoelectronic device according to any one of claims 1 to 3, characterized in that: in, The functional structure includes: germanium or germanium silicon.

5. The optoelectronic device according to claim 4, characterized in that: in, In the stacking direction of the substrate and the functional structure, the height of the germanium or germanium silicon is in the range of 0.08-4.5 μm.

6. The optoelectronic device according to any one of claims 1 to 3, characterized in that: In the case where the optoelectronic device is a horizontal optoelectronic device, two contact holes are arranged on the functional surface, the two contact holes are arranged on both sides of the target end of the functional structure, and the functional structure is contacted and connected with the two connection structures through the two contact holes.

7. The optoelectronic device according to any one of claims 1 to 3, characterized in that: In the case that the optoelectronic device is a vertical optoelectronic device, a single contact hole is provided on the functional surface, the contact hole is provided on the target end of the functional structure, and the functional structure is contact-connected with the connection structure through the contact hole.

8. The optoelectronic device according to any one of claims 1 to 3, characterized in that: in, The aperture parameters of the contact hole correspond to the end surface parameters of the contact end of the connection structure; The aperture parameters are set based on the transmission performance requirements of the optoelectronic device.

9. A contact hole preparation method, characterized in that: The method comprises: Performing waveguide etching on the functional structure of the optoelectronic device to form a waveguide structure; Performing a doping process on the waveguide structure to a doped region; Growing a waveguide cover layer in the doped region to obtain a growth region, and determining a contact hole region in the growth region; A low contact resistance material is deposited in the contact hole region to obtain the contact hole.

10. An optical device, characterized in that: The optical device comprises the optoelectronic device according to any one of claims 1-8.

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