Display device

Abstract

The invention provides a display device. The display device includes: a base layer; a display layer disposed on the base layer and including a light emitting element; a conductive pattern layer disposed on the display layer; and a bank disposed on the display layer, protruding in the thickness direction of the base layer, and surrounding at least a portion of a predetermined region. The bank covers the conductive pattern layer and includes a first bank scatterer and a second bank scatterer having a different size than the first bank scatterer.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] Recently, as the attention to information display has been increasing, research and development of display devices have been continuously carried out. As the application fields of display devices are diversified, the display device needs to include a panel structure with further improved light extraction efficiency.

[0003] In addition, in order to perform the manufacturing process of the display device, various processes can be adopted. For example, in order to pattern a conductive layer and / or an insulating layer, an exposure process can be performed.

[0004] When performing the exposure process, the position of the mask can be adjusted based on the position of the alignment key provided on the panel for manufacturing the display device. Therefore, in order to properly implement the manufacturing process, it may be necessary to properly identify the alignment key through process equipment. Summary of the Invention

[0005] One aspect of the present disclosure is to provide a display device with improved light extraction efficiency and display quality.

[0006] Another aspect of the present disclosure is to provide a display device capable of properly identifying an alignment key structure to enable the normal execution of the manufacturing process of the display device.

[0007] According to an embodiment, the display device may include: a base layer; a display layer disposed on the base layer and including a light-emitting element; a conductive pattern layer disposed on the display layer; and a bank disposed on the display layer, protruding in the thickness direction of the base layer, and surrounding at least a part of a predetermined area. The bank may cover the conductive pattern layer and may include a first bank scatterer and a second bank scatterer having a different size from the first bank scatterer.

[0008] According to an embodiment, the bank may transmit light in the near-infrared wavelength band.

[0009] According to an embodiment, the bank may have a light transmittance in the range of 13% to 15% for light with a wavelength of 880 nm.

[0010] According to an embodiment, the bank may include a bank matrix containing a photosensitive material.

[0011] According to an embodiment, the first bank scatterer and the second bank scatterer may each include a material selected from titanium oxide (TiO x ), silica (SiO x(e.g., silica beads, hollow silica, etc.), zirconium oxide (ZrO x ), aluminum oxide (Al x O y ), indium oxide (In x O y ), zinc oxide (ZnO x ), tin oxide (SnO x ), cerium oxide (CeO x ), indium tin oxide (ITO), antimony tin oxide (ATO), and one or more of the group of antimony oxide (Sb x O y ).

[0012] According to an embodiment, the size of the first bank scatterer may be 200 nm to 300 nm.

[0013] According to an embodiment, the size of the second bank scatterer may be 100 nm to 200 nm.

[0014] According to an embodiment, the bank may have a thickness in the range of 10 μm to 11 μm. With respect to the solid content of the bank, the first bank scatterer and the second bank scatterer may be included in the range of 6 wt% to 7 wt%.

[0015] According to an embodiment, the bank may have a thickness in the range of 4 μm to 6 μm. With respect to the solid content of the bank, the first bank scatterer and the second bank scatterer may be included in the range of 12 wt% to 16 wt%.

[0016] According to an embodiment, the bank may have a thickness in the range of 2 μm to 4 μm. With respect to the solid content of the bank, the first bank scatterer and the second bank scatterer may be included in the range of 20 wt% to 24 wt%.

[0017] According to an embodiment, the bank may have a thickness in the range of 0.5 μm to 1.5 μm. With respect to the solid content of the bank, the first bank scatterer and the second bank scatterer may be included in the range of 0.01 wt% to 60 wt%.

[0018] According to an embodiment, in the exposure fixing for manufacturing the display device, the conductive pattern layer can be used as an alignment key.

[0019] According to an embodiment, the display device may further include: a color-changing layer disposed in the region surrounded by the bank and including quantum dots.

[0020] According to an embodiment, the display device may include a plurality of sub-pixels that respectively provide light of a specified color and form a plurality of sub-pixel regions. The plurality of sub-pixel regions may include a first sub-pixel region, a second sub-pixel region, and a third sub-pixel region. The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, and a third sub-pixel. The bank may be disposed between the plurality of sub-pixel regions. The display device may further include: a first color-changing layer disposed within the first sub-pixel region and including first quantum dots; a second color-changing layer disposed within the second sub-pixel region and including second quantum dots; and a scattering layer disposed within the third sub-pixel region and including a scatterer.

[0021] According to an embodiment, the conductive pattern layer and the bank may be in contact with each other.

[0022] (Advantageous Effects of the Invention)

[0023] According to an embodiment of the present disclosure, a display device with improved light extraction efficiency and display quality can be provided.

[0024] According to an embodiment of the present disclosure, a display device capable of appropriately recognizing an alignment key structure to enable normal execution of the manufacturing process of the display device can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic top view showing a display device according to an embodiment.

[0026] Figure 2 and Figure 3 is a schematic cross-sectional view showing a display device according to an embodiment.

[0027] Figure 4 is a schematic view showing a bank according to an embodiment.

[0028] Figure 5 is a schematic view showing a part of the manufacturing process steps of a display device according to an embodiment.

[0029] Figure 6 is a graph showing Experimental Example 1.

[0030] Figure 7 is a graph showing Experimental Example 2. DETAILED DESCRIPTION

[0031] The present disclosure can be subject to various modifications and can have various forms. Specific embodiments are illustrated in the accompanying drawings and are described in detail in the detailed description. However, this is not intended to limit the present disclosure to a specific disclosed form, but should be understood to include all modifications, equivalents, and alternatives falling within the spirit and technical scope of the present disclosure.

[0032] Terms such as first, second, etc. may be used to describe various components, but the components are not limited by these terms. These terms are only used for the purpose of distinguishing one component from other components. For example, without departing from the scope of the present disclosure, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component. Unless otherwise clearly indicated in the context, singular expressions include plural expressions.

[0033] In the present disclosure, it should be understood that terms such as "comprising" or "having" are intended to specify the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and are not intended to preclude the presence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Also, when a part such as a layer, film, region, plate, etc. is "above" another part, this includes not only the case where it is directly above the other part, but also the case where there are other parts in between. And, in this specification, when a part such as a certain layer, film, region, plate, etc. is formed "on" another part, the forming direction is not limited to the upper side, but includes forming on the side or below. Conversely, when a part such as a layer, film, region, plate, etc. is "below" another part, this includes not only the case where it is directly below the other part, but also the case where there are other parts in between.

[0034] The present disclosure relates to a display device. The display device according to an embodiment will be described below with reference to the accompanying drawings.

[0035] 1. Display device

[0036] Figure 1 is a schematic top view showing the display device according to an embodiment.

[0037] Referring to Figure 1 , the display device DD may include a base layer BSL and pixels PXL disposed on the base layer BSL. Although not shown, the display device DD may further include a driving circuit unit (e.g., a scan driving unit and a data driving unit) for driving the pixels PXL, wirings, and pads.

[0038] The display device DD (or the base layer BSL) may include a display area DA and a non-display area NDA. The non-display area NDA may represent an area other than the display area DA. The non-display area NDA may surround at least a part of the display area DA.

[0039] The base layer BSL can form the base surface of the display device DD. The base layer BSL can be a rigid or flexible substrate or film. For example, the base layer BSL can include a glass material. Alternatively, the base layer BSL can include a silicon material. Alternatively, the base layer BSL can include polyimide. However, the present disclosure is not limited thereto.

[0040] The display area DA can represent an area where pixels PXL are arranged. The non-display area NDA can represent an area where pixels PXL are not arranged. In the non-display area NDA, a driving circuit unit, wirings, and pads connected to the pixels PXL in the display area DA can be arranged.

[0041] According to an embodiment, the pixels PXL (or sub-pixels SPX) can be arranged in a stripe or PENTILE TM ) arrangement structure or the like, but is not limited thereto, and various embodiments can be adopted in the present disclosure.

[0042] According to an embodiment, the pixel PXL (or sub-pixel SPX) can include: a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. The first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can be sub-pixels respectively. At least one of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can form a pixel unit that can emit light of various colors.

[0043] Each of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can emit light of a specified color.

[0044] For example, the first sub-pixel SPX1 can be a red pixel that emits red (as an example, the first color) light, the second sub-pixel SPX2 can be a green pixel that emits green (as an example, the second color) light, and the third sub-pixel SPX3 can be a blue pixel that emits blue (as an example, the third color) light. The red pixel can provide light in a wavelength band of 600 nm to 750 nm. The green pixel can provide light in a wavelength band of 480 nm to 560 nm. The blue pixel can provide light in a wavelength band of 370 nm to 460 nm.

[0045] According to an embodiment, the number of the second sub-pixels SPX2 can be greater than the number of the first sub-pixels SPX1 and the number of the third sub-pixels SPX3. However, the color, type, and / or number, etc. of the first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 that form each pixel unit are not limited to the specific examples shown.

[0046] Refer to Figures 2 to 5, a display device DD including a bank BNK of an embodiment will be described.

[0047] Figure 2 and Figure 3 is a schematic cross-sectional view showing the display device of the embodiment. Figure 2 is a schematic cross-sectional view showing the display device DD, Figure 3 is a schematic cross-sectional view showing a display layer DL and a quantum dot layer QL among multiple layers of the display device DD. Figure 3 shows a cross-sectional structure of the display device DD within a display area DA.

[0048] Figure 4 is a schematic view showing the bank of the embodiment.

[0049] Figure 5 is a schematic view showing part of the manufacturing process steps of the display device of the embodiment. Figure 5 Schematically shows the process steps of performing an exposure process based on a conductive pattern layer KEY disposed below the bank BNK of the embodiment.

[0050] Referring to Figures 2 to 5 , the display device DD of the embodiment may include: a display layer DL, a quantum dot layer QL, and a cover layer CL. The quantum dot layer QL may be a bank layer.

[0051] The display layer DL may be configured to be capable of emitting light. The display layer DL may form a substrate for disposing the quantum dot layer QL.

[0052] The display layer DL may include: a pixel circuit layer PCL including a base layer BSL; and a light-emitting element layer LEL including a light-emitting element LD.

[0053] The base layer BSL may form a substrate for disposing the pixel circuit PXC. The pixel circuit PXC may be disposed above the base layer BSL and may be configured to drive the light-emitting element LD. The pixel circuit layer PCL may include a conductive layer and an insulating layer, and the conductive layer may form the pixel circuit PXC.

[0054] According to an embodiment, the pixel circuit PXC may include: a first pixel circuit PXC1 configured to drive a first sub-pixel SPX1 (e.g., a first light-emitting element LD1); a second pixel circuit PXC2 configured to drive a second sub-pixel SPX2 (e.g., a second light-emitting element LD2); and a third pixel circuit PXC3 configured to drive a third sub-pixel SPX3 (e.g., a third light-emitting element LD3).

[0055] The light-emitting element layer LEL may be disposed above the pixel circuit layer PCL. According to an embodiment, the light-emitting element layer LEL may include a light-emitting element LD. The light-emitting element LD may be an inorganic light-emitting diode including an inorganic semiconductor, or the light-emitting element LD may be an organic light-emitting diode (OLED: Organic Light Emitting Diode) including an organic material. However, the present disclosure is not limited to specific examples.

[0056] The light-emitting element LD may be electrically connected to the pixel circuit PXC. The light-emitting element LD may emit light based on an electrical signal (e.g., the intensity of a current) provided from the pixel circuit PXC. The light-emitting element LD may include: a first light-emitting element LD1 included in the first sub-pixel SPX1; a second light-emitting element LD2 included in the second sub-pixel SPX2; and a third light-emitting element LD3 included in the third sub-pixel SPX3.

[0057] According to an embodiment, sub-pixel regions SPXA corresponding to the sub-pixels SPX may be formed in the display area DA. The sub-pixel regions SPXA may include: a first sub-pixel region SPXA1 corresponding to the first sub-pixel SPX1; a second sub-pixel region SPXA2 corresponding to the second sub-pixel SPX2; and a third sub-pixel region SPXA3 corresponding to the third sub-pixel SPX3.

[0058] The quantum dot layer QL may be disposed above the display layer DL (e.g., the light-emitting element layer LEL). The quantum dot layer QL may be a layer in which a bank BNK is disposed.

[0059] The quantum dot layer QL may include: a first capping layer CPL1, a conductive pattern layer KEY, a bank BNK, a color-changing layer CCL, a scattering layer LSL, and a second capping layer CPL2. The color-changing layer CCL may include a first color-changing layer CCL1 and a second color-changing layer CCL2.

[0060] The first capping layer CPL1 may be disposed above the light-emitting element layer LEL. According to an embodiment, the first capping layer CPL1 may cap the lower portions of the first color-changing layer CCL1, the second color-changing layer CCL2, and the scattering layer LSL.

[0061] According to an embodiment, the first capping layer CPL1 may form a substrate for disposing the conductive pattern layer KEY. For example, the first capping layer CPL1 may be in contact with the conductive pattern layer KEY.

[0062] According to an embodiment, the first capping layer CPL1 may be provided across the first to third sub-pixels SPX1, SPX2, SPX3. According to an embodiment, the first capping layer CPL1 is an inorganic layer and may include a material selected from silicon nitride (SiNx ) Aluminum nitride (AlN x ) Titanium nitride (TiN x ) Silicon oxide (SiO x ) Aluminum oxide (Al x O y ) Titanium oxide (TiO x ) Silicon oxycarbide (SiO x C y ) and one or more of the group of silicon oxynitride (SiO x N y ). However, the present disclosure is not limited thereto.

[0063] The conductive pattern layer KEY may be disposed between a plurality of sub-pixel regions SPXA. According to an embodiment, when viewed from above, the conductive pattern layer KEY may not overlap with the sub-pixel region SPXA.

[0064] The conductive pattern layer KEY may be covered by the bank BNK. The conductive pattern layer KEY may be in contact with the bank BNK. When viewed from above, the conductive pattern layer KEY may overlap with the bank BNK.

[0065] According to an embodiment, the conductive pattern layer KEY may be disposed above the display layer DL (e.g., the light-emitting element layer LEL). The conductive pattern layer KEY may be disposed above the first cover layer CPL1.

[0066] However, the position of the conductive pattern layer KEY is not necessarily limited to the foregoing examples. In some embodiments, the conductive pattern layer KEY may not be disposed in the quantum dot layer QL and may also be disposed in the same layer as the conductive layer formed on the pixel circuit layer PCL.

[0067] The conductive pattern layer KEY may include a conductive material. For example, the conductive pattern layer KEY may include a titanium-copper alloy (TiCu) or aluminum (Al). However, the present disclosure is not limited thereto.

[0068] According to an embodiment, when performing a process for manufacturing the display device DD (e.g., an exposure process), the conductive pattern layer KEY may perform an alignment key function.

[0069] For example, the conductive pattern layer KEY may be an alignment key (e.g., a wafer alignment key) used for performing an exposure process in the manufacturing process of the display device DD. The alignment key may be used for alignment between masks. When performing an exposure process, the alignment key may be used for alignment between the mask and the mother substrate MS.

[0070] For example, in order to manufacture the display device DD, after a photoresist layer and an exposure mask are disposed on the mother substrate MS, the exposure device 100 performs an exposure process. At this time, it is necessary to precisely define the positions between the exposure mask and the mother substrate MS. According to an embodiment, the positions of the exposure mask and the mother substrate MS can be determined based on the position of the conductive pattern layer KEY.

[0071] According to an embodiment, a conductive layer and an insulating layer can be patterned and formed on the mother substrate MS, and by disposing a plurality of structures for forming the display device DD, the display device DD of the embodiment is constituted. As a result, due to the provision of the conductive pattern layer KEY of the embodiment, the manufacturing process of the display device DD including the exposure process can be appropriately performed.

[0072] In addition, the exposure device 100 can determine the positions of the exposure mask and the mother substrate MS based on the position of the conductive pattern layer KEY. For example, the exposure device 100 can include a light transmitting portion and a light receiving portion. The light transmitting portion of the exposure device 100 can provide light in a specified wavelength band to the mother substrate MS, and the light receiving portion can obtain position information regarding the conductive pattern layer KEY and the mother substrate MS by recognizing the interaction (e.g., reflection, etc.) of the provided light with the conductive pattern layer KEY.

[0073] According to an embodiment, the light applied by the exposure device 100 to obtain information related to the position of the conductive pattern layer KEY can include a near-infrared (NIR: Near Infrared Radiation) wavelength band. For example, the near-infrared wavelength band can include a wavelength range that at least includes 880 nm. According to an embodiment, the near-infrared wavelength band can include a wavelength band in the range of 760 nm to 1400 nm. According to an embodiment, the near-infrared wavelength band can include a wavelength band in the range of 800 nm to 960 nm.

[0074] That is, in order to accurately determine the position of the exposure mask, etc. based on the position of the conductive pattern layer KEY, it may be necessary to apply the light applied by the exposure device 100 to the conductive pattern layer KEY.

[0075] According to an embodiment, the bank portion BNK disposed on the conductive pattern layer KEY can allow the light applied by the exposure device 100 to pass through, whereby, during the exposure process, the conductive pattern layer KEY can function as an alignment key.

[0076] The bank portion BNK can be disposed on the display layer DL (e.g., the light-emitting element layer LEL). The bank portion BNK can be disposed between a plurality of sub-pixel regions SPXA.

[0077] According to an embodiment, when viewed from above, the bank portion BNK may overlap with the conductive pattern layer KEY. The bank portion BNK may cover the conductive pattern layer KEY. The bank portion BNK may be in contact with the conductive pattern layer KEY.

[0078] The bank portion BNK may surround at least a part of a predetermined area. For example, the bank portion BNK may surround at least a part of the area for forming the sub-pixel region SPXA and may protrude in the thickness direction of the base layer BSL (e.g., the third direction DR3). Thus, the bank portion BNK may form a space in which the first color-changing layer CCL1, the second color-changing layer CCL2, and the scattering layer LSL can be arranged (e.g., accommodated).

[0079] The bank portion BNK may cover the conductive pattern layer KEY used as an alignment key and may be configured to allow the light applied by the exposure device 100 to pass through. The bank portion BNK may have a predetermined light transmittance. Thus, for the exposure process, the light for obtaining the position information of the conductive pattern layer KEY can appropriately pass through the bank portion BNK.

[0080] For example, the bank portion BNK may have a light transmittance of 10% or more for light in the near-infrared wavelength band. According to an embodiment, the bank portion BNK may have a light transmittance in the range of 13% to 20% for light in the near-infrared wavelength band (e.g., light having a wavelength of 880 nm). According to an embodiment, the bank portion BNK may have a light transmittance in the range of 13% to 15% for light in the near-infrared wavelength band (e.g., light having a wavelength of 880 nm). Among them, the near-infrared wavelength band may include about 880 nm.

[0081] The light transmittance defined in this specification can be measured using a generally used well-known UV-VIS spectrophotometer.

[0082] According to an embodiment, when the light transmittance of the bank portion BNK satisfies the aforementioned numerical range, the exposure device 100 can identify the position of the conductive pattern layer KEY, and thus the exposure process can be appropriately performed.

[0083] The bank portion BNK may be a scattering bank. For example, the bank portion BNK may include a bank base BBS and a bank scatterer BSC.

[0084] According to an embodiment, the bank portion BNK may include the bank scatterer BSC. In this case, the light applied to the bank portion BNK is recycled, which can improve the light extraction efficiency and can improve the brightness characteristics of the display device DD.

[0085] The bank base BBS may contain a matrix material for forming the bank portion BNK. The bank base BBS may be a base for including the bank scatterer BSC.

[0086] According to an embodiment, the bank base BBS may include a photosensitive material. For example, the bank base BBS may include various organic materials having photosensitivity.

[0087] The bank scatterer BSC may include a scattering material capable of scattering light provided from the display layer DL. The bank scatterer BSC may be dispersedly disposed within the bank base BBS.

[0088] According to an embodiment, the bank scatterer BSC may include one or more selected from the group consisting of titanium oxide (TiO x ), silica (SiO x ) (e.g., silica beads, hollow silica, etc.), zirconium oxide (ZrO x ), aluminum oxide (Al x O y ), indium oxide (In x O y ), zinc oxide (ZnO x ), tin oxide (SnO x ), cerium oxide (CeO x ), indium tin oxide (ITO), antimony tin oxide (ATO), and antimony oxide (Sb x O y ). For example, the bank scatterer BSC may include TiO 2 . However, the present disclosure is not limited thereto.

[0089] The bank scatterer BSC may include bank scatterers BSC having different sizes from each other. For example, the bank scatterer BSC may include a first bank scatterer BSC1 and a second bank scatterer BSC2 having different sizes from each other.

[0090] According to an embodiment, the first bank scatterer BSC1 may have a first size. The second bank scatterer BSC2 may have a second size smaller than the first size.

[0091] In this specification, the size of the bank scatterer BSC may mean the maximum diameter that can be defined for the particles of the bank scatterer BSC.

[0092] For example, when the bank scatterer BSC is elliptical, the size of the bank scatterer BSC may be the major radius of the ellipse. For example, when the bank scatterer BSC is circular, the size of the bank scatterer BSC may be the diameter. For example, when the bank scatterer BSC has a shape including an irregular protruding structure, the size of the bank scatterer BSC may be the distance between the ends that are farthest apart from each other within the shape of the bank scatterer BSC.

[0093] According to an embodiment, the first size of the first bank scatterer BSC1 may be from 200 nm to 300 nm. According to an embodiment, the first size of the first bank scatterer BSC1 may be from 220 nm to 300 nm. According to an embodiment, the first size of the first bank scatterer BSC1 may be from 200 nm to 250 nm. However, the present disclosure is not limited thereto.

[0094] According to an embodiment, the second size of the second bank scatterer BSC2 may be from 100 nm to 200 nm. The second size of the second bank scatterer BSC2 may be from 150 nm to 200 nm. However, the present disclosure is not limited thereto.

[0095] According to an embodiment, when the first bank scatterer BSC1 and the second bank scatterer BSC2 respectively satisfy the aforementioned numerical ranges, as the bank BNK has a predetermined light transmittance, when the exposure process is performed, not only can the conductive pattern layer KEY appropriately perform the function of the alignment key, but at the same time, as having a predetermined reflectance, the light extraction efficiency of the display device DD can be improved.

[0096] For example, the first bank scatterer BSC1 may have a larger size, whereby it can have a higher reflectance for the light applied from the light-emitting element LD. Thus, the first bank scatterer BSC1 can cause the bank BNK to function as a scattering bank.

[0097] For example, the second bank scatterer BSC2 may have a smaller size, whereby it can have a higher transmittance for light in the near-infrared wavelength band.

[0098] Experimentally, when the scatterer has a size half of the wavelength of the target light, it can have a higher reflectance. That is, according to an embodiment, by disposing the first bank scatterer BSC1 in the bank BNK, the bank BNK can have a high reflectance for the wavelength band of the light to be provided by the display device DD, and by disposing the second bank scatterer BSC2 in the bank BNK, the bank BNK can have a high transmittance for the wavelength band of the light to be transmitted during the exposure process.

[0099] The bank portion BNK may have a prescribed bank thickness BT. According to an embodiment, the bank thickness BT may be in the range of 1 μm to 15 μm. According to an embodiment, the bank thickness BT may be defined based on the thickness direction of the base layer BSL (e.g., the third direction DR3 or the thickness direction of the conductive pattern layer KEY).

[0100] According to an embodiment, the bank scatterer BSC is included in the range of 1 wt% to 60 wt% with respect to the solid content of the bank portion BNK. For example, the bank portion BNK may include a solvent and a solid content, and the content of the bank scatterer BSC may be defined based on the overall solid content. According to an embodiment, the content of the bank scatterer BSC may be the sum of the content of the first bank scatterer BSC1 and the content of the second bank scatterer BSC2. According to an embodiment, the solvent may include a variety of organic solvents. As an example, the solvent may include PGMEA (Propylene Glycol Monomethyl Ether Acetate). However, the present disclosure is not limited thereto.

[0101] According to an embodiment, the bank thickness BT may be determined based on the content of the bank scatterer BSC. The content of the bank scatterer BSC may be determined based on the bank thickness BT. For example, the bank thickness BT and the content of the bank scatterer BSC may be determined dependently on each other.

[0102] According to an embodiment, as the bank thickness BT increases, the light transmittance for light in the near-infrared wavelength band decreases, and the light reflectance for the light provided by the display device DD increases. According to an embodiment, as the content of the bank scatterer BSC increases, the light transmittance for light in the near-infrared wavelength band decreases, and the light reflectance for the light provided by the display device DD increases. Thus, it may be necessary to adjust the bank thickness BT and the content of the bank scatterer BSC.

[0103] According to an embodiment, the bank thickness BT may have a thickness in the range of 10 μm to 11 μm, and may include the bank scatterer BSC in the range of 6 wt% to 7 wt% with respect to the solid content of the bank portion BNK.

[0104] According to an embodiment, the bank thickness BT may have a thickness in the range of 4 μm to 6 μm, and may include the bank scatterer BSC in the range of 12 wt% to 16 wt% with respect to the solid content of the bank portion BNK.

[0105] According to an embodiment, the bank thickness BT may have a thickness in the range of 2 μm to 4 μm, and may include the bank scatterer BSC in the range of 20 wt% to 24 wt% with respect to the solid content of the bank portion BNK.

[0106] According to an embodiment, the bank thickness BT may have a thickness in the range of 0.5 μm to 1.5 μm, and may include a bank scatterer BSC in a range of 60 wt% or less with respect to the solid content of the bank BNK. For example, the bank thickness BT may have a thickness in the range of 0.5 μm to 1.5 μm, and may include a bank scatterer BSC in a range of 0.01 wt% to 60 wt% with respect to the solid content of the bank BNK.

[0107] According to an embodiment, when the bank thickness BT and the content of the bank scatterer BSC satisfy the aforementioned numerical ranges, the bank BNK may have excellent light transmission characteristics for the near-infrared wavelength band and may have an excellent reflectance for the light provided by the display device DD.

[0108] According to an embodiment, the color-changing layer CCL may be disposed on the light-emitting element layer LEL (e.g., the light-emitting element LD). The color-changing layer CCL may be configured to be able to change the wavelength of light. According to an embodiment, the first to third sub-pixels SPX1, SPX2, SPX3 may include light-emitting elements LD that emit light of the same color. For example, the first to third sub-pixels SPX1, SPX2, SPX3 may include light-emitting elements LD that emit light of the third color (or blue). By respectively disposing a color-changing layer CCL containing color-changing particles on such first to third sub-pixels SPX1, SPX2, SPX3, a full-color image can be displayed.

[0109] However, the color of the light emitted by the light-emitting element LD is not limited to the aforementioned example. For ease of explanation, an embodiment in which the light-emitting element LD of each sub-pixel SPX emits blue light will be described as a reference.

[0110] The first color-changing layer CCL1 may include first color-changing particles for converting the light of the third color emitted by the light-emitting element LD into light of the first color. For example, the first color-changing layer CCL1 may include a plurality of first quantum dots QD1 dispersed in a predetermined matrix material such as a base resin.

[0111] According to an embodiment, when the light-emitting element LD is a blue light-emitting element that emits blue light and the first sub-pixel SPX1 is a red pixel, the first color-changing layer CCL1 may include first quantum dots QD1 for converting the blue light emitted by the blue light-emitting element into red light. The first quantum dots QD1 may absorb blue light and shift the wavelength according to energy migration, thereby being able to emit red light. In addition, when the first sub-pixel SPX1 is a pixel of another color, the first color-changing layer CCL1 may include first quantum dots QD1 corresponding to the color of the first sub-pixel SPX1.

[0112] The second color conversion layer CCL2 may include second color conversion particles for converting the light of the third color emitted by the light-emitting element LD into light of the second color. For example, the second color conversion layer CCL2 may include a plurality of second quantum dots QD2 dispersed in a predetermined matrix material such as a base resin.

[0113] According to an embodiment, when the light-emitting element LD is a blue light-emitting element that emits blue light and the second sub-pixel SPX2 is a green pixel, the second color conversion layer CCL2 may include second quantum dots QD2 for converting the blue light emitted by the blue light-emitting element into green light. The second quantum dots QD2 may absorb blue light and shift the wavelength according to energy migration, so as to be able to emit green light. In addition, when the second sub-pixel SPX2 is a pixel of other colors, the second color conversion layer CCL2 may include second quantum dots QD2 corresponding to the color of the second sub-pixel SPX2.

[0114] According to an embodiment, by respectively irradiating blue light with a shorter wavelength in the visible light region into the first quantum dots QD1 and the second quantum dots QD2, the absorption coefficients of the first quantum dots QD1 and the second quantum dots QD2 are increased. As a result, it is finally possible to improve the light efficiency of the light emitted by the first sub-pixel SPX1 and the second sub-pixel SPX2 while ensuring excellent color reproducibility. And, by using the same color light-emitting element LD (as an example, a blue light-emitting element) to form the first to third sub-pixels SPX1, SPX2, and SPX3, the manufacturing efficiency of the display device DD can be improved.

[0115] The scattering layer LSL may be provided to effectively utilize the light of the third color (or blue) emitted by the light-emitting element LD. As an example, when the light-emitting element LD is a blue light-emitting element that emits blue light and the third sub-pixel SPX3 is a blue pixel, the scattering layer LSL may include at least one scatterer SCT to effectively utilize the light emitted from the light-emitting element LD. As an example, the scatterer SCT of the scattering layer LSL may include a variety of light-scattering particles or light-scattering substances. For example, the scatterer may include one or more of the examples described above with reference to the bank scatterer BSC.

[0116] In addition, the scatterer SCT is not only disposed in the third sub-pixel SPX3, but may also be selectively included inside the first color conversion layer CCL1 or the second color conversion layer CCL2. According to an embodiment, a scattering layer LSL that omits the scatterer SCT and includes a transparent polymer may also be provided.

[0117] The second cover layer CPL2 may be disposed on the upper portions of the first color conversion layer CCL1, the second color conversion layer CCL2, and the scattering layer LSL, and may cover the first color conversion layer CCL1, the second color conversion layer CCL2, and the scattering layer LSL.

[0118] According to an embodiment, the second cover layer CPL2 may be provided across the first to third sub-pixels SPX1, SPX2, and SPX3. According to an embodiment, the second cover layer CPL2 is an inorganic layer and may include one or more selected from the group consisting of silicon nitride (SiN x ), aluminum nitride (AlN x ), titanium nitride (TiN x ), silicon oxide (SiO x ), aluminum oxide (Al x O y ), titanium oxide (TiO x ), silicon oxycarbide (SiO x C y ), and silicon oxynitride (SiO x N y ). However, the present disclosure is not limited thereto.

[0119] The protective layer CL may be disposed above the quantum dot layer QL. According to an embodiment, the light provided from the display layer DL may pass through the protective layer CL and diverge to the outside.

[0120] According to an embodiment, the protective layer CL may include a window. According to an embodiment, examples of the protective layer CL are not particularly limited. For example, the protective layer CL may further include a color filter. The protective layer CL may further include an antireflection film (or structure). The protective layer CL may further include a lens layer.

[0121] 2. Experimental Example

[0122] Hereinafter, based on the embodiments and comparative examples, experimental examples related to the technical effects of the present disclosure will be described. However, the following embodiments and comparative examples are merely illustrated for more specifically explaining the present disclosure, and the present disclosure is not necessarily limited to the following embodiments and comparative examples.

[0123] (1) Experimental Example 1

[0124] Experimental Example 1 is provided to illustrate the trend of the light transmittance of the bank BNK changing with the bank thickness BT and the content of the bank scatterer BSC. The results of Experimental Example 1 are shown in Figure 6 . Figure 6 is a graph showing Experimental Example 1.

[0125] To perform Experimental Example 1, banks BNK corresponding to Fabrication Example 1-1, Fabrication Example 1-2, and Fabrication Example 1-3 were fabricated.

[0126] <Fabrication Example 1-1>

[0127] Based on the solid content of the bank portion BNK, it contains 6 wt% of TiO with a size of approximately 220 nm 2 As the bank scatterer BSC, the bank portion BNK of Production Example 1-1 was obtained.

[0128] <Production Example 1-2>

[0129] Based on the solid content of the bank portion BNK, it contains 8 wt% of TiO with a size of approximately 220 nm 2 As the bank scatterer BSC, the bank portion BNK of Production Example 1-2 was obtained.

[0130] <Production Example 1-3>

[0131] Based on the solid content of the bank portion BNK, it contains 10 wt% of TiO with a size of approximately 220 nm 2 As the bank scatterer BSC, the bank portion BNK of Production Example 1-3 was obtained.

[0132] At room temperature (25 °C), by changing the bank thickness BT of the obtained bank portion BNK and applying light with a wavelength band of approximately 880 nm, the light transmittance was measured. As the light application device, the UV-3600I product of SHIMADZU Corporation was used, and the CA-130 product of MINOLTA Corporation was used to measure the light transmittance.

[0133] In Figure 6 , the 1-1 graph 120 shows the light transmittance changing with the bank thickness BT of the bank portion BNK of Production Example 1-1. In Figure 6 , the 1-2 graph 140 shows the light transmittance changing with the bank thickness BT of the bank portion BNK of Production Example 1-2. In Figure 6 , the 1-3 graph 160 shows the light transmittance changing with the bank thickness BT of the bank portion BNK of Production Example 1-3.

[0134] Referring to Figure 6 It can be seen that as the bank thickness BT increases, the light transmittance of the bank portion BNK for the near-infrared wavelength band decreases. At the same time, it can be seen that as the content of the bank scatterer BSC increases, the light transmittance of the bank portion BNK for the near-infrared wavelength band decreases.

[0135] As described above, in order for the conductive pattern layer KEY to be suitable as an alignment key, it may be necessary for the bank portion BNK to have a specified light transmittance. For example, when the bank portion BNK has a light transmittance above the target transmittance UT, in the case where the conductive pattern layer KEY can be used as an alignment key, the bank portion BNK is preferably set to have a bank thickness BT and a content of the bank scatterer BSC defined on the upper side of the line representing the target transmittance UT.

[0136] (2) Experimental Example 2

[0137] Experimental Example 2 is provided to illustrate the trend of the light reflectance changing with the wavelength of the light applied to the bank BNK. The results of Experimental Example 2 are shown in Figure 7 . Figure 7 It is a graph showing Experimental Example 2.

[0138] To perform Experimental Example 2, banks BNK corresponding to Production Examples 2-1, 2-2, 2-3, 2-4, and 2-5 were manufactured.

[0139] <Production Example 2-1>

[0140] With respect to the solid content of the bank BNK, it includes TiO having a size of about 170 nm at 10 wt%. 2 As the bank scatterer BSC, the bank BNK of Production Example 2-1 was obtained.

[0141] <Production Example 2-2>

[0142] With respect to the solid content of the bank BNK, it includes TiO having a size of about 300 nm at 5 wt%. 2 As the first bank scatterer BSC1, and with respect to the solid content of the bank BNK, it includes TiO having a size of about 170 nm at 5 wt%. 2 As the second bank scatterer BSC2, the bank BNK of Production Example 2-2 was obtained.

[0143] <Production Example 2-3>

[0144] With respect to the solid content of the bank BNK, it includes TiO having a size of about 300 nm at 7 wt%. 2 As the first bank scatterer BSC1, and with respect to the solid content of the bank BNK, it includes TiO having a size of about 170 nm at 3 wt%. 2 As the second bank scatterer BSC2, the bank BNK of Production Example 2-3 was obtained.

[0145] <Production Example 2-4>

[0146] With respect to the solid content of the bank BNK, it includes TiO having a size of about 300 nm at 9 wt%. 2 As the first bank scatterer BSC1, and with respect to the solid content of the bank BNK, it includes TiO having a size of about 170 nm at 1 wt%. 2 As the second bank scatterer BSC2, the bank BNK of Production Example 2-4 was obtained.

[0147] <Production Example 2-5>

[0148] With respect to the solids content of the bank portion BNK, it contains 10% by weight of TiO having a size of about 300 nm 2 As the bank portion scatterer BSC, the bank portion BNK of Production Example 2-5 was obtained.

[0149] For the obtained bank portion BNK, light in various wavelength bands was applied and the light reflectance was measured. As the light application device, the UV-3600I product of SHIMADZU Corporation was used, and the CA-130 product of MINOLTA Corporation was used to measure the light reflectance.

[0150] In Figure 7 the 2-1 graph 220 shows the light reflectance changing with the wavelength of the light applied to the bank portion BNK of Production Example 2-1. In Figure 7 the 2-2 graph 230 shows the light reflectance changing with the wavelength of the light applied to the bank portion BNK of Production Example 2-2. In Figure 7 the 2-3 graph 240 shows the light reflectance changing with the wavelength of the light applied to the bank portion BNK of Production Example 2-3. In Figure 7 the 2-4 graph 260 shows the light reflectance changing with the wavelength of the light applied to the bank portion BNK of Production Example 2-4. In Figure 7 the 2-5 graph 280 shows the light reflectance changing with the wavelength of the light applied to the bank portion BNK of Production Example 2-5.

[0151] Referring to Figure 7 it can be seen that in a lower wavelength band (for example, a wavelength band of about 450 nm or less), the bank portion BNK can have a high reflectance as the content of the second bank portion scatterer BSC2 with a smaller size increases. And it can be seen that in the visible light wavelength band (for example, about 450 nm to about 700 nm), the bank portion BNK can have a high reflectance as the content of the first bank portion scatterer BSC1 with a larger size increases.

[0152] As described above, it is necessary for the bank portion BNK of the embodiment to have a high reflectance in a lower wavelength band including the visible light wavelength band. In combination with Figure 7 by making the bank portion BNK include the first bank portion scatterer BSC1 and the second bank portion scatterer BSC2 having different sizes from each other, the foregoing technical characteristics can be ensured.

[0153] (3) Experimental Example 3

[0154] Experimental Example 3 is provided to illustrate the technical effect of improving the light transmittance characteristics and reflectance characteristics by making the bank portion BNK of the embodiment include a first bank scatterer BSC1 and a second bank scatterer BSC2 having different sizes from each other. The results of Experimental Example 3 are shown in Table 1.

[0155] To carry out Experimental Example 3, bank portions BNK corresponding to the comparative example, Production Example 3-1, Production Example 3-2, Production Example 3-3, and Production Example 3-4 were fabricated. Experimental Example 3 is provided to illustrate the structural features of the bank portion BNK including the first and second bank scatterers BSC1 and BSC2 having different sizes from each other. For ease of explanation, the bank portion BNK including a bank scatterer BSC with relatively uniform sizes was designated as the comparative example.

[0156] <Comparative Example>

[0157] Relative to the solids content of the bank portion BNK, TiO having a size of about 220 nm was included at 6 wt%. 2 As the bank scatterer BSC, the bank portion BNK of the comparative example was obtained.

[0158] <Production Example 3-1>

[0159] Relative to the solids content of the bank portion BNK, TiO having a size of about 220 nm was included at 3 wt%. 2 As the first bank scatterer BSC1, and relative to the solids content of the bank portion BNK, TiO having a size of about 170 nm was included at 4 wt%. 2 As the second bank scatterer BSC2, the bank portion BNK of Production Example 3-1 was obtained.

[0160] <Production Example 3-2>

[0161] Relative to the solids content of the bank portion BNK, TiO having a size of about 220 nm was included at 4 wt%. 2 As the first bank scatterer BSC1, and relative to the solids content of the bank portion BNK, TiO having a size of about 170 nm was included at 3 wt%. 2 As the second bank scatterer BSC2, the bank portion BNK of Production Example 3-2 was obtained.

[0162] <Production Example 3-3>

[0163] Relative to the solids content of the bank portion BNK, TiO having a size of about 220 nm was included at 5 wt%. 2 As the first bank scatterer BSC1, and relative to the solids content of the bank portion BNK, TiO having a size of about 170 nm was included at 2 wt%. 2As the second bank scattering body BSC2, the bank BNK of Production Example 3-3 was obtained.

[0164] <Production Example 3-4>

[0165] Relative to the solid content of the bank BNK, TiO having a size of about 220 nm was included at 3% by weight. 2 As the first bank scattering body BSC1, and relative to the solid content of the bank BNK, TiO having a size of about 170 nm was included at 3% by weight. 2 As the second bank scattering body BSC2, the bank BNK of Production Example 3-4 was obtained.

[0166] For the obtained bank BNK, the integrating sphere reflectance was measured, and the transmittance for the near-infrared wavelength band (about 880 nm) was measured.

[0167] To measure each integrating sphere reflectance and light transmittance, a UV-3600I product of SHIMADZU Corporation was used as the light application device, and a CA-130 product of MINOLTA Corporation was used as the device for measuring light characteristics.

[0168] Table 1

[0169]

[0170] Referring to Table 1, when compared with the comparative example in which the bank BNK includes only bank scattering bodies BSC with relatively uniform sizes, in the case where the bank BNK includes the first bank scattering body BSC1 and the second bank scattering body BSC2 with different sizes according to the embodiment, it is possible to have excellent integrating sphere reflectance and improve the transmittance for the near-infrared wavelength band.

[0171] As described above, although the description has been made with reference to the preferred embodiments of the present disclosure, those skilled in the relevant technical field or ordinary technicians in the relevant technical field should understand that various modifications and changes can be made to the present disclosure without departing from the spirit of the present disclosure described in the appended claims and the scope of the technical field.

[0172] Therefore, the technical scope of the present disclosure is not limited to the content described in the detailed description of the specification, but should be defined by the appended claims.

Claims

1. A display device, in, include: Grassroots; A display layer, which is disposed on the base layer and includes a light-emitting element; a conductive pattern layer, disposed on the display layer; and a bank portion, arranged on the display layer, protruding in the thickness direction of the base layer, and surrounding at least a part of a predetermined area, The bank covers the conductive pattern layer and includes a first bank scatterer and a second bank scatterer having a size different from that of the first bank scatterer.

2. The display device according to claim 1, wherein: The bank portion transmits light in the near-infrared wavelength band.

3. The display device according to claim 2, wherein: The bank has a light transmittance ranging from 13% to 15% with respect to light having a wavelength of 880 nm.

4. The display device according to claim 1, wherein: The bank includes a bank matrix including a photosensitive material.

5. The display device according to claim 1, wherein: The first bank scatterer and the second bank scatterer each include titanium oxide TiO x 、Silicon oxide SiO x , Zirconium oxide ZrO x 、Aluminum oxide Al x O y 、Indium oxideIn x O y 、ZnO x , tin oxide SnO x 、Cerium Oxide CeO x , indium tin oxide ITO, antimony tin oxide ATO and antimony oxide Sb x O y One or more of the groups The silicon oxide SiOx includes silicon oxide beads and hollow silicon oxide.

6. The display device according to claim 1, wherein: The size of the first bank scatterer is 200 nm to 300 nm.

7. The display device according to claim 1, wherein: The size of the second bank scatterer is 100 nm to 200 nm.

8. The display device according to claim 1, wherein: The bank has a thickness ranging from 10 μm to 11 μm, The first bank scatterer and the second bank scatterer are included in an amount ranging from 6 wt % to 7 wt % relative to the solid content of the bank.

9. The display device according to claim 1, wherein: The bank has a thickness ranging from 4 μm to 6 μm, The first bank scatterer and the second bank scatterer are included in an amount ranging from 12 wt % to 16 wt % relative to a solid content of the bank.

10. The display device according to claim 1, wherein: The bank has a thickness ranging from 2 μm to 4 μm, The first bank scatterer and the second bank scatterer are included in an amount ranging from 20 wt % to 24 wt % relative to a solid content of the bank.

11. The display device according to claim 1, wherein: The bank has a thickness ranging from 0.5 μm to 1.5 μm, The first bank scatterer and the second bank scatterer are included in an amount ranging from 0.01 wt % to 60 wt % relative to a solid content of the bank.

12. The display device according to claim 1, wherein: The conductive pattern layer can be used as an alignment key in exposure fixing for manufacturing the display device.

13. The display device according to claim 1, wherein: Also includes: The color-changing layer is disposed in the region surrounded by the bank and includes quantum dots.

14. The display device according to claim 1, wherein: The device comprises a plurality of sub-pixels, each of which provides light of a predetermined color and forms a plurality of sub-pixel regions. The plurality of sub-pixel regions include a first sub-pixel region, a second sub-pixel region and a third sub-pixel region. The plurality of sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel, The bank is arranged between the plurality of sub-pixel regions. The display device further includes: A first color-changing layer, disposed in the first sub-pixel region, and comprising a first quantum dot; A second color-changing layer, disposed in the second sub-pixel region and comprising a second quantum dot; and The scattering layer is disposed in the third sub-pixel region and includes a scatterer.

15. The display device according to claim 1, wherein: The conductive pattern layer and the bank are in contact with each other.

Images