Display panel, manufacturing method thereof and display device

Abstract

The invention provides a display panel, a manufacturing method of the display panel and a display device, relates to the technical field of display, and aims to solve the problem of poor display of the display panel caused by display brightness difference of different display areas of a display product due to relatively large voltage drop of a cathode layer in the display product. The display panel comprises a substrate, an auxiliary electrode layer, a cathode layer and a partition structure, wherein the auxiliary electrode layer, the cathode layer and the partition structure are arranged on the substrate; the partition structure is located on the side, opposite to the substrate, of the auxiliary electrode layer, the partition structure comprises a first partition part and a second partition part which are arranged in a stacked mode, the first partition part is located between the second partition part and the substrate, the first partition part comprises a single first partition layer, and the partition structure forms a notch in the side face of the first partition layer; the cathode layer is disconnected at the notch to form a first cathode part and a second cathode part which are independent from each other, the first cathode part is located on the side, opposite to the substrate, of the second partition part, and the second cathode part is electrically connected with the auxiliary electrode layer at the notch.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and particularly to a display panel, a manufacturing method thereof, and a display device. Background Art

[0002] The top-emitting WOLED (White Organic Light-Emitting Diode) display panel has a structure in which light is emitted upward from the EL layer (light-emitting layer). It combines the light emitted by a blue OLED emitter with a yellow phosphor to generate a white OLED backlight, and then forms separate red, green, and blue sub-pixels through an RGB color filter array. In this structure, a transparent cathode must be used for the cathode layer above the EL layer, and the resistance of the transparent cathode is relatively large, resulting in a large voltage drop (Vss IR Drop) of the voltage signal transmitted by the cathode layer, and further causing a display brightness difference in different display areas of the display panel, resulting in poor display of the display panel. Summary of the Invention

[0003] The purpose of the present invention is to provide a display panel, a manufacturing method thereof, and a display device, which are used to solve the problem that the voltage drop of the cathode layer in the display product is relatively large, resulting in a display brightness difference in different display areas of the display product, and causing poor display of the display panel.

[0004] To achieve the above purpose, the present invention provides the following technical solutions:

[0005] A first aspect of the present invention provides a display panel, including: a substrate, and an auxiliary electrode layer, a cathode layer, and a partition structure disposed on the substrate;

[0006] The partition structure is located on a side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition part and a second partition part stacked on each other. The first partition part is located between the second partition part and the substrate. The first partition part includes a single-layer first partition layer. The partition structure forms a notch on a side surface of the first partition layer;

[0007] The cathode layer is disconnected at the notch to form an independent first cathode part and a second cathode part. The first cathode part is located on a side of the second partition part facing away from the substrate. The second cathode part is electrically connected to the auxiliary electrode layer at the notch.

[0008] Optionally, the display panel further includes a connection electrode layer. The connection electrode layer is located between the first partition layer and the auxiliary electrode layer. The second cathode part is electrically connected to the auxiliary electrode layer at the notch through the connection electrode layer.

[0009] Optionally, the connecting electrode layer includes a single-layer film layer.

[0010] Optionally, the orthographic projection of the first partition layer on the substrate is located inside the orthographic projection of the second partition portion on the substrate, and the edge portion of the second partition portion surrounds the orthographic projection of the first partition layer on the substrate in the orthographic projection on the substrate.

[0011] The orthographic projection of the second partition portion on the substrate is located inside the orthographic projection of the connecting electrode layer on the substrate, and the edge portion of the connecting electrode layer surrounds the orthographic projection of the second partition portion on the substrate in the orthographic projection on the substrate.

[0012] Optionally, the first partition layer includes a columnar polycrystalline silicon nitride film layer.

[0013] Optionally, the second partition portion includes a single-layer second partition layer.

[0014] Optionally, the first partition layer includes a single-layer conductive metal layer.

[0015] Optionally, the second partition portion includes a columnar polycrystalline silicon nitride film layer and an indium tin oxide layer stacked, and the columnar polycrystalline silicon nitride film layer is located between the indium tin oxide layer and the substrate; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0016] Optionally, the display panel further includes a light-emitting functional layer, and the light-emitting functional layer is disconnected at the notch to form independent first and second light-emitting functional parts. The first light-emitting functional part is located between the first cathode part and the second partition part, and at least part of the second light-emitting functional part is located between the second cathode part and the connecting electrode layer.

[0017] Optionally, the auxiliary electrode layer includes auxiliary electrode lines and a plurality of auxiliary electrode patterns respectively coupled to the auxiliary electrode lines, and the plurality of auxiliary electrode patterns are arranged in sequence along the extending direction of the auxiliary electrode lines;

[0018] The partition structure is located on the side of the auxiliary electrode pattern facing away from the substrate, and the second cathode part is electrically connected to the auxiliary electrode pattern at the notch.

[0019] Based on the above technical solution of the display panel, a second aspect of the present invention provides a display device, including the above display panel.

[0020] Based on the technical solution of the above display panel, the third aspect of the present invention provides a method for manufacturing a display panel for manufacturing the above display panel; the manufacturing method includes:

[0021] Fabricate an auxiliary electrode layer on the substrate.

[0022] Fabricate a partition structure on the side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition part and a second partition part stacked on top of each other. The first partition part is located between the second partition part and the substrate. The first partition part includes a single-layer first partition layer. The partition structure forms a notch on the side of the first partition layer.

[0023] Fabricate a cathode layer. The cathode layer is disconnected at the notch to form independent first and second cathode parts. The first cathode part is located on the side of the second partition part facing away from the substrate. The second cathode part is electrically connected to the auxiliary electrode layer at the notch.

[0024] Optionally, the step of fabricating the partition structure specifically includes:

[0025] Deposit to form a first partition material layer.

[0026] On the side of the first partition material layer facing away from the substrate, deposit to form a second partition part material layer.

[0027] Adopt an etching process to pattern the second partition part material layer and the first partition material layer simultaneously to form the first partition layer and the second partition part.

[0028] Optionally, the first partition layer includes a columnar polycrystalline silicon nitride film layer, and the second partition part includes a single-layer second partition layer; the step of fabricating the partition structure specifically includes:

[0029] Deposit to form a columnar polycrystalline silicon nitride thin film.

[0030] On the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate, deposit to form a second partition material layer.

[0031] Adopt an etching process to pattern the second partition material layer and the columnar polycrystalline silicon nitride thin film simultaneously to form the columnar polycrystalline silicon nitride film layer and the second partition layer.

[0032] Optionally, the first partition layer includes a single-layer conductive metal layer, and the second partition part includes a columnar polycrystalline silicon nitride film layer and an indium tin oxide layer stacked on top of each other; the step of fabricating the partition structure specifically includes:

[0033] Deposit to form a conductive metal material layer.

[0034] On the side of the conductive metal material layer facing away from the substrate, a columnar polycrystalline silicon nitride thin film is deposited and formed.

[0035] On the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate, an indium tin oxide material layer is deposited and formed.

[0036] An etching process is used to simultaneously pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0037] Optionally, the step of depositing and forming the columnar polycrystalline silicon nitride thin film specifically includes:

[0038] Using silane and nitrogen with a ratio of 1:30 to 1:100, and adopting plasma chemical vapor deposition method, a columnar polycrystalline silicon nitride thin film is deposited and formed at a process temperature below 230°C.

[0039] In the technical solution provided by the present invention, it includes the auxiliary electrode layer, the cathode layer, and the partition structure. The partition structure is located on the side of the auxiliary electrode layer facing away from the substrate, and the side surface of the partition structure has a notch, so that the cathode layer can be electrically connected to the auxiliary electrode layer at the notch, thereby effectively reducing the resistance of the cathode layer and improving the problem of display brightness difference in different display areas of the display panel caused by a large Vss IR Drop, and enhancing the brightness uniformity of the display panel.

[0040] In the technical solution provided by the present invention, the partition structure is provided to include a first partition part and a second partition part arranged in a stacked manner. The first partition part is located between the second partition part and the substrate. The first partition part includes a single-layer first partition layer, and the partition structure forms a notch on the side surface of the first partition layer; this setting method is beneficial to reducing the number of film layers included in the overall partition structure, and can achieve that when the second partition part only includes one film layer, only a process of depositing and etching 2 film layers is required; when the second partition part includes two film layers, only a process of depositing and etching 3 film layers is required; therefore, in the technical solution provided by the present invention, the manufacturing process flow of the partition structure can be effectively simplified, the manufacturing process flow time can be shortened, and at the same time, the defects generated during deposition and etching are reduced, thereby effectively improving the manufacturing yield and enhancing the production volume. Description of the Drawings

[0041] The accompanying drawings described herein are used to provide a further understanding of the present invention, and form a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute an improper limitation to the present invention. In the drawings:

[0042] Figure 1 is a cross-sectional schematic diagram of a display panel provided by an embodiment of the present invention;

[0043] Figure 2 is a top view schematic diagram of a display panel provided by an embodiment of the present invention;

[0044] Figure 3 is a schematic diagram of a short circuit between adjacent sub-pixels in a display panel provided by an embodiment of the present invention;

[0045] Figure 4 is a cross-sectional schematic diagram of a partition structure in the related art;

[0046] Figure 5 is a first cross-sectional schematic diagram of a partition structure provided by an embodiment of the present invention;

[0047] Figure 6 is a second cross-sectional schematic diagram of a partition structure provided by an embodiment of the present invention. Detailed Embodiments

[0048] In order to further illustrate the display panel, its manufacturing method, and the display device provided by the embodiments of the present invention, the following will be described in detail with reference to the accompanying drawings of the specification.

[0049] Please refer to Figure 5 and Figure 6 , an embodiment of the present invention provides a display panel, including: a substrate substrate and an auxiliary electrode layer 10, a cathode layer 13, and a partition structure 14 disposed on the substrate substrate;

[0050] The partition structure 14 is located on a side of the auxiliary electrode layer 10 facing away from the substrate substrate. The partition structure 14 includes a first partition portion and a second partition portion 142 stacked. The first partition portion is located between the second partition portion 142 and the substrate substrate. The first partition portion includes a single-layer first partition layer 141. The partition structure 14 forms a notch on a side surface of the first partition layer 141;

[0051] The cathode layer 13 is disconnected at the notch to form independent first and second cathode portions 131 and 132. The first cathode portion 131 is located on a side of the second partition portion 142 facing away from the substrate substrate. The second cathode portion 132 is electrically connected to the auxiliary electrode layer 10 at the notch.

[0052] As Figure 1As shown, the display panel further includes a substrate 30, a driving circuit layer 31, a pixel electrode layer 32, a light-emitting functional layer 12, a white color filter layer CFW, a red color filter layer CFR, a green color filter layer CFG, and a blue color filter layer CFB. Figure 1 The dashed arrows in Figure 1 represent the light-emitting direction of the display panel.

[0053] As Figure 2 shown, exemplarily, the display panel includes an auxiliary electrode layer 10, a data signal transmission layer DA, a reference signal transmission layer Vref, and a power supply signal transmission layer Vdd; for example: the orthographic projection of the auxiliary electrode layer 10 on the substrate, the orthographic projection of the reference signal transmission layer Vref on the substrate, and the orthographic projection of the power supply signal transmission layer Vdd on the substrate are arranged in a cyclic order along a first direction.

[0054] Exemplarily, the display panel includes a plurality of sub-pixels distributed in an array (such as: a red sub-pixel R, a green sub-pixel G, a blue sub-pixel B, and a white sub-pixel W), the plurality of sub-pixels are divided into multiple columns of sub-pixels arranged along the first direction, and each column of sub-pixels includes a plurality of sub-pixels arranged along a second direction, and the second direction intersects with the first direction. For example: there is a data signal transmission layer DA on each side of each column of sub-pixels, the odd-numbered sub-pixels in the column of sub-pixels are coupled to the data signal transmission layer DA on the first side, and the even-numbered sub-pixels in the column of sub-pixels are coupled to the data signal transmission layer DA on the second side.

[0055] Exemplarily, the orthographic projection of the data signal transmission layer DA on the substrate is located between the orthographic projection of a column of sub-pixels it is coupled to on the substrate and the orthographic projection of an adjacent power supply signal transmission layer Vdd on the substrate; or, between the orthographic projection of a column of sub-pixels it is coupled to on the substrate and the orthographic projection of an adjacent reference signal transmission layer Vref on the substrate; or, between the orthographic projection of a column of sub-pixels it is coupled to on the substrate and the orthographic projection of an adjacent auxiliary electrode layer 10 on the substrate.

[0056] Exemplarily, the display panel includes a plurality of partition structures 14. In the display panel, the auxiliary electrode layer 10 is formed first, then the partition structures 14 are formed, and then the cathode layer 13 is formed. The partition structure 14 includes a first partition part and a second partition part 142 arranged in a stacked manner. Along the direction parallel to the substrate, the second partition part 142 protrudes from the first partition part, that is, it has a Tip structure protruding from the first partition part, so as to form a notch on the side of the first partition layer 141.

[0057] Exemplarily, the first partition portion includes a single-layer first partition layer 141. The second partition portion 142 may include a single-layer structure or a double-layer structure, but is not limited thereto.

[0058] Exemplarily, due to the function of the above-mentioned Tip structure, the cathode layer 13 can be disconnected at the notch to form the independent first cathode portion 131 and the second cathode portion 132, and the second cathode portion 132 can be electrically connected to the auxiliary electrode layer 10 at the notch.

[0059] According to the structure of the above-mentioned display panel, in the display panel provided by the embodiment of the present invention, it includes the auxiliary electrode layer 10, the cathode layer 13 and the partition structure 14. The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate, and the side of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13 and improving the problem of display brightness difference in different display areas of the display panel caused by a large Vss IR Drop, and improving the brightness uniformity of the display panel.

[0060] In addition, as Figure 4 shown, if the partition structure 14 is set to the structure as Figure 3 shown, that is, it includes the second conductive layer 22, the third conductive layer 23, the fourth conductive layer 24 and the fifth conductive layer 25, then when manufacturing the partition structure 14, a process of depositing and etching 4 conductive layers is required. When performing so many processes, due to the Particles and process defects generated in the process equipment, the yield will be reduced and the process time will be increased. It should be noted that Figure 3 also shows the first conductive layer 21, and the Tip structure 251 included in the fifth conductive connection portion 25.

[0061] In the display panel provided by the embodiment of the present invention, it is set that the partition structure 14 includes a first partition part and a second partition part 142 which are stacked. The first partition part is located between the second partition part 142 and the substrate. The first partition part includes a single-layer first partition layer 141. The partition structure 14 forms a notch on the side surface of the first partition layer 141. This setting method is beneficial to reducing the number of film layers included in the overall partition structure 14, and can achieve that when the second partition part 142 only includes one film layer, only a process of depositing and etching 2 film layers is required; when the second partition part 142 includes two film layers, only a process of depositing and etching 3 film layers is required; therefore, in the display panel provided by the embodiment of the present invention, the manufacturing process flow of the partition structure 14 can be effectively simplified, the manufacturing process flow time can be shortened, and at the same time, the defects generated during deposition and etching are reduced, thereby effectively improving the manufacturing yield and increasing the production volume.

[0062] As Figure 5 and Figure 6 shown, in some embodiments, the display panel further includes a connection electrode layer 11, the connection electrode layer 11 is located between the first partition layer 141 and the auxiliary electrode layer 10, and the second cathode part 132 is electrically connected to the auxiliary electrode layer 10 through the connection electrode layer 11 at the notch.

[0063] It should be noted that Figure 5 and Figure 6 also shows a passivation layer PVX.

[0064] Exemplarily, the connection electrode layer 11 includes a single-layer film layer. The connection electrode layer 11 is made of a single material and is formed by a single patterning process.

[0065] Exemplarily, the display panel further includes a pixel electrode layer. The connection electrode layer 11 is provided on the same layer and made of the same material as the pixel electrode layer, but is not limited thereto. For example: the pixel electrode layer is made of indium tin oxide (ITO) material.

[0066] Exemplarily, at least part of the connection electrode layer 11 is located on the surface of the auxiliary electrode layer 10 facing away from the substrate.

[0067] Exemplarily, the overall cross-section of the partition structure 14 and the connection electrode layer 11 is in an I shape.

[0068] The above setting that the second cathode part 132 is electrically connected to the auxiliary electrode layer 10 through the connection electrode layer 11 at the notch not only ensures the connection performance, but also reduces the connection difficulty between the second cathode part 132 and the auxiliary electrode layer 10.

[0069] As Figure 5 and Figure 6 shown, in some embodiments, the orthographic projection of the first partition layer 141 on the substrate is located inside the orthographic projection of the second partition portion 142 on the substrate, and the edge portion of the second partition portion 142 in the orthographic projection on the substrate surrounds the orthographic projection of the first partition layer 141 on the substrate;

[0070] The orthographic projection of the second partition portion 142 on the substrate is located inside the orthographic projection of the connection electrode layer 11 on the substrate, and the edge portion of the connection electrode layer 11 in the orthographic projection on the substrate surrounds the orthographic projection of the second partition portion 142 on the substrate.

[0071] Exemplarily, as Figure 2 shown, the auxiliary electrode layer 10 includes auxiliary electrode lines 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode lines 101, and the plurality of auxiliary electrode patterns 102 are arranged in sequence along the extending direction of the auxiliary electrode lines 101; the partition structure 14 is located on the side of the auxiliary electrode pattern 102 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode pattern 102 at the notch.

[0072] Exemplarily, the orthographic projection of the auxiliary electrode pattern 102 on the substrate is located inside the orthographic projection of the connection electrode layer 11 on the substrate. Further, the orthographic projection of the boundary of the connection electrode layer 11 on the substrate can be set to surround the orthographic projection of the auxiliary electrode pattern 102 on the substrate.

[0073] The above setting method enables notches to be formed around the partition portion, so that the second cathode portion 132 can achieve electrical connection with the connection electrode layer 11 around the partition portion, further improving the connection performance.

[0074] As Figure 5 shown, in some embodiments, the first partition layer 141 includes a columnar polycrystalline silicon nitride film layer.

[0075] Exemplarily, the second partition portion 142 includes a single-layer second partition layer. For example: the second partition layer is made of indium tin oxide material.

[0076] It should be noted that general silicon nitride thin films have an amorphous nature. During production, if a large amount of ammonia and silane gases are directly deposited on the ITO thin film, it will cause adverse phenomena such as a decrease in the transparency of the ITO thin film and ITO Open.

[0077] Fabrication of columnar polycrystalline SiN x In the technology for fabricating a thin film, NH is not used 3 , but a small amount of SiH 4 gas and a large amount of nitrogen gas are used to avoid adverse phenomena such as ITO Haze and ITO Open. At the same time, due to the characteristics of the columnar polycrystalline SiN x thin film, when the wet etching solution penetrates between the film interfaces, it has an etching property, and the columnar polycrystalline SiN can be patterned by wet etching x thin film, thereby forming a columnar polycrystalline silicon nitride film layer.

[0078] More specifically, the process flow for fabricating the partition structure 14 in the above embodiment includes: depositing and forming a columnar polycrystalline silicon nitride thin film; depositing and forming a second partition material layer on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate; using a wet etching process to pattern the second partition material layer and the columnar polycrystalline silicon nitride thin film simultaneously to form the columnar polycrystalline silicon nitride film layer and the second partition layer. The step of depositing and forming the columnar polycrystalline silicon nitride thin film specifically includes: using silane and nitrogen gas with a ratio of 1:30 to 1:100, and adopting plasma chemical vapor deposition to deposit and form a columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0079] Exemplarily, when using a wet etching process, a metal etching solution can be used for etching, but it is not limited thereto.

[0080] The above setting method only requires a process of depositing and etching two film layers, which can effectively simplify the fabrication process flow of the partition structure 14, shorten the time of the fabrication process flow, and at the same time reduce the defects generated during deposition and etching, thereby effectively improving the fabrication yield and increasing the production volume.

[0081] As Figure 6 shown, in some embodiments, the first partition layer 141 includes a single-layer conductive metal layer.

[0082] Exemplarily, the single-layer conductive metal layer is made of a metal material, for example: metal Mo, but it is not limited thereto.

[0083] Exemplarily, the second partition portion 142 includes a columnar polycrystalline silicon nitride film layer 1422 and an indium tin oxide layer 1421 arranged in a stacked manner, and the columnar polycrystalline silicon nitride film layer 1422 is located between the indium tin oxide layer 1421 and the substrate; the orthographic projection of the columnar polycrystalline silicon nitride film layer 1422 on the substrate coincides with the orthographic projection of the indium tin oxide layer 1421 on the substrate.

[0084] More specifically, the process flow for fabricating the partition structure 14 in the above embodiment includes: depositing a conductive metal material layer; depositing a columnar polycrystalline silicon nitride thin film on the side of the conductive metal material layer facing away from the substrate; depositing an indium tin oxide material layer on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate; using an etching process to pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer simultaneously to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate. The step of depositing the columnar polycrystalline silicon nitride thin film specifically includes: using silane and nitrogen with a ratio of 1:30 to 1:100, and adopting plasma chemical vapor deposition method to deposit the columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0085] Exemplarily, when using a wet etching process, a metal etchant can be used for etching, but it is not limited thereto.

[0086] The above setting only requires a process of depositing and etching three film layers, which can effectively simplify the manufacturing process flow of the partition structure 14, shorten the manufacturing process flow time, and at the same time reduce the defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing the production volume.

[0087] It should be noted that, as Figure 4 shown, in the related art, the partition structure 14 includes a second conductive layer 22, a third conductive layer 23, a fourth conductive layer 24, and a fifth conductive layer 25 which are sequentially stacked, and the fifth conductive layer 25 includes a Tip structure 251; when fabricating this structure, four film layers are sequentially deposited, and then wet etching is performed sequentially starting from the top film layer; this structure requires a complex process, and during the O 2 Plasma and cleaning before the deposition of the organic light-emitting layer, the Tip structure 251 breaks, and there is a problem of short circuit between adjacent sub-pixels. As Figure 3 shown, the black bar indicates the short circuit between adjacent sub-pixels.

[0088] The above setting that the second partition portion 142 includes a columnar polycrystalline silicon nitride film layer and an indium tin oxide layer stacked improves the problem that the Tip structure is prone to break when the second partition portion 142 only includes an indium tin oxide layer, thereby avoiding the problem of short circuit between adjacent sub-pixels caused by the break of the Tip structure, improving the defect of simultaneous light emission of adjacent sub-pixels, and effectively improving the image quality of the display panel.

[0089] As Figure 5 and Figure 6As shown, in some embodiments, the display panel further includes a light-emitting functional layer 12, and the light-emitting functional layer 12 is disconnected at the notch to form independent first and second light-emitting functional portions 121 and 122. The first light-emitting functional portion 121 is located between the first cathode portion 131 and the second partition portion 142, and at least a part of the second light-emitting functional portion 122 is located between the second cathode portion 132 and the connection electrode layer 11.

[0090] Exemplarily, the light-emitting functional layer 12 includes a white light-emitting functional layer 12, but is not limited thereto.

[0091] The above arrangement enables the second cathode portion 132 to be electrically connected to the connection electrode layer 11 through the second light-emitting functional portion 122, and further to be electrically connected to the auxiliary electrode through the connection electrode layer 11, which further improves the reliability of the connection between the second cathode portion 132 and the auxiliary electrode.

[0092] As Figure 2 As shown, in some embodiments, the auxiliary electrode layer 10 includes auxiliary electrode lines 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode lines 101. The plurality of auxiliary electrode patterns 102 are arranged in sequence along the extending direction of the auxiliary electrode lines 101. The partition structure 14 is located on the side of the auxiliary electrode pattern 102 facing away from the substrate. The second cathode portion 132 is electrically connected to the auxiliary electrode pattern 102 at the notch.

[0093] Exemplarily, the auxiliary electrode layer 10 includes auxiliary electrode lines 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode lines 101. For example, the auxiliary electrode pattern 102 and the auxiliary electrode line 101 to which it is coupled form an integral structure.

[0094] Exemplarily, the extending direction of the auxiliary electrode lines 101 is the same as the arrangement direction of the plurality of sub-pixels included in the sub-pixel column.

[0095] Exemplarily, the partition structure 14 corresponds to the auxiliary electrode pattern 102 one by one, and the partition structure 14 is located on the side of the corresponding auxiliary electrode pattern 102 facing away from the substrate.

[0096] The above arrangement enables sufficient connection between the cathode layer 13 and the auxiliary electrode layer 10, and better ensures the reliability of the connection.

[0097] An embodiment of the present invention further provides a display device, including the display panel provided in the above embodiment.

[0098] It should be noted that the display device may be: a television, a monitor, a digital photo frame, a mobile phone, a tablet computer, or any product or component with a display function. Among them, the display device further includes a flexible circuit board, a printed circuit board, a backplane, etc.

[0099] In the display panel provided in the above embodiment, the auxiliary electrode layer 10, the cathode layer 13, and the partition structure 14 are included. The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate, and the side surface of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13 and improving the problem of display brightness differences in different display areas of the display panel caused by a large Vss IR Drop, and improving the brightness uniformity of the display panel.

[0100] In the display panel provided in the above embodiment, the partition structure 14 is provided to include a first partition part and a second partition part 142 arranged in layers. The first partition part is located between the second partition part 142 and the substrate. The first partition part includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side surface of the first partition layer 141; this setting method is beneficial to reducing the number of film layers included in the partition structure 14 as a whole, and can achieve that when the second partition part 142 only includes one film layer, only a process of depositing and etching 2 film layers is required; when the second partition part 142 includes two film layers, only a process of depositing and etching 3 film layers is required; therefore, in the display panel provided in the above embodiment, the manufacturing process flow of the partition structure 14 can be effectively simplified, the manufacturing process flow time can be shortened, and at the same time, the defects generated during deposition and etching are reduced, thereby effectively improving the manufacturing yield and increasing the production volume.

[0101] When the display device provided in the embodiment of the present invention includes the above display panel, it also has the above beneficial effects, which will not be elaborated here.

[0102] The embodiment of the present invention also provides a method for manufacturing a display panel for manufacturing the display panel provided in the above embodiment; the manufacturing method includes:

[0103] Manufacture the auxiliary electrode layer 10 on the substrate.

[0104] Manufacture the partition structure 14 on the side of the auxiliary electrode layer 10 facing away from the substrate. The partition structure 14 includes a first partition part and a second partition part 142 arranged in layers. The first partition part is located between the second partition part 142 and the substrate. The first partition part includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side surface of the first partition layer 141;

[0105] Fabricate a cathode layer 13, the cathode layer 13 being disconnected at the notch to form independent first and second cathode portions 131 and 132. The first cathode portion 131 is located on a side of the second partition portion 142 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode layer 10 at the notch.

[0106] Exemplarily, the auxiliary electrode layer 10 can be formed of the same layer and the same material as the source-drain metal layer in the display panel, so that the auxiliary electrode and the source-drain metal layer can be formed simultaneously in the same patterning process, but it is not limited thereto.

[0107] Exemplarily, the cathode layer 13 is fabricated using a transparent conductive material, such as IZO (indium zinc oxide) material, but it is not limited thereto.

[0108] In the display panel fabricated by the fabrication method provided by the embodiment of the present invention, it includes the auxiliary electrode layer 10, the cathode layer 13, and the partition structure 14. The partition structure 14 is located on a side of the auxiliary electrode layer 10 facing away from the substrate, and the side surface of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13, improving the problem of display brightness differences in different display areas of the display panel caused by a large Vss IR Drop, and enhancing the brightness uniformity of the display panel.

[0109] In the display panel fabricated by the fabrication method provided by the embodiment of the present invention, the partition structure 14 is provided to include a first partition portion and a second partition portion 142 arranged in a stacked manner. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side surface of the first partition layer 141; this setting method is beneficial to reducing the number of film layers included in the overall partition structure 14, and can achieve that when the second partition portion 142 only includes one film layer, only a process of depositing and etching 2 film layers is required; when the second partition portion 142 includes two film layers, only a process of depositing and etching 3 film layers is required; therefore, in the display panel fabricated by the fabrication method provided by the embodiment of the present invention, the fabrication process flow of the partition structure 14 can be effectively simplified, the fabrication process flow time can be shortened, and at the same time, the defects generated during deposition and etching are reduced, thereby effectively improving the fabrication yield and enhancing the production volume.

[0110] In some embodiments, the steps of fabricating the partition structure 14 specifically include:

[0111] Deposit to form a first partition material layer;

[0112] On the side of the first partition material layer facing away from the substrate, a second partition portion 142 material layer is deposited and formed.

[0113] Using an etching process, the second partition portion 142 material layer and the first partition material layer are patterned simultaneously to form the first partition layer 141 and the second partition portion 142.

[0114] Exemplarily, the deposition process may be selected from evaporation deposition, chemical vapor deposition, etc., but is not limited thereto.

[0115] Exemplarily, the etching process includes a wet etching process, that is, etching is performed using an etching solution.

[0116] Using the above steps to fabricate the partition structure 14 can effectively simplify the process flow of fabricating the partition structure 14 and reduce the manufacturing cost of the display panel.

[0117] In some embodiments, the first partition layer 141 includes a columnar polycrystalline silicon nitride film layer, and the second partition portion 142 includes a single-layer second partition layer; the steps of fabricating the partition structure 14 specifically include:

[0118] Deposit and form a columnar polycrystalline silicon nitride thin film.

[0119] On the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate, a second partition material layer is deposited and formed.

[0120] Using an etching process, the second partition material layer and the columnar polycrystalline silicon nitride thin film are patterned simultaneously to form the columnar polycrystalline silicon nitride film layer and the second partition layer.

[0121] Exemplarily, the step of depositing and forming a columnar polycrystalline silicon nitride thin film specifically includes: using silane and nitrogen with a ratio of 1:30 to 1:100, and adopting plasma chemical vapor deposition method, at a process temperature below 230°C, deposit and form a columnar polycrystalline silicon nitride thin film.

[0122] Exemplarily, the ratio of silane to nitrogen is between 1:30 and 1:100, and the endpoint values can be taken.

[0123] The above manufacturing method only requires a process of depositing and etching two layers of film, which can effectively simplify the manufacturing process flow of the partition structure 14, shorten the time of the manufacturing process flow, and at the same time reduce the defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing the production volume.

[0124] In some embodiments, the first partition layer 141 includes a single-layer conductive metal layer, and the second partition portion 142 includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer; the steps of fabricating the partition structure 14 specifically include:

[0125] Depositing a conductive metal material layer;

[0126] On the side of the conductive metal material layer facing away from the substrate, depositing a columnar polycrystalline silicon nitride thin film;

[0127] On the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate, depositing an indium tin oxide material layer;

[0128] Using an etching process to simultaneously pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0129] Exemplarily, the steps of depositing a columnar polycrystalline silicon nitride thin film specifically include: using silane and nitrogen with a ratio of 1:30 to 1:100 and adopting plasma chemical vapor deposition to deposit a columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0130] The above fabrication method only requires a process of depositing and etching three film layers, which can effectively simplify the fabrication process flow of the partition structure 14, shorten the time of the fabrication process flow, and at the same time reduce the defects generated during deposition and etching, thereby effectively improving the fabrication yield and increasing the output.

[0131] It should be noted that the signal line extending in a certain direction means that the signal line includes a main part and a secondary part connected to the main part. The main part is a line, a line segment, or a strip-shaped body. The main part extends in a certain direction, and the length of the main part extending in a certain direction is greater than the length of the secondary part extending in other directions.

[0132] It should be noted that the "same layer" in the embodiments of the present invention may refer to the film layers on the same structural layer. Or, for example, the film layers in the same layer may be the film layers formed by the same film-forming process for forming a specific pattern, and then the layer structure formed by patterning the film layer using the same mask through a single patterning process. Depending on the different specific patterns, the single patterning process may include multiple exposure, development, or etching processes, and the specific patterns in the formed layer structure may be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses.

[0133] In the method embodiments of the present invention, the sequence numbers of the steps do not limit the order of the steps. For those of ordinary skill in the art, without creative efforts, the changes in the order of the steps are also within the protection scope of the present invention.

[0134] It should be noted that the embodiments in this specification are all described in a progressive manner. The same or similar parts among the embodiments can be referred to each other, and the differences between each embodiment and other embodiments are emphasized. In particular, for method embodiments, since they are basically similar to product embodiments, they are described relatively simply, and the relevant parts can be referred to the descriptions of product embodiments.

[0135] Unless otherwise defined, the technical terms or scientific terms used in this disclosure should have the ordinary meanings understood by those of ordinary skill in the art to which the present invention belongs. The terms "first", "second" and similar terms used in this disclosure do not denote any order, quantity or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or objects appearing before the term cover the elements or objects listed after the term and their equivalents, without excluding other elements or objects. The terms such as "connected", "coupled" or "linked" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships, and when the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0136] It can be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element can be "directly" on or under the other element, or there may be intermediate elements.

[0137] In the description of the above embodiments, the specific features, structures, materials or characteristics can be combined in a suitable manner in any one or more embodiments or examples.

[0138] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should all be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A display panel, characterized in that: include: A base substrate and an auxiliary electrode layer, a cathode layer and a partition structure arranged on the base substrate; The partition structure is located on a side of the auxiliary electrode layer facing away from the base substrate, the partition structure comprises a first partition part and a second partition part which are stacked, the first partition part is located between the second partition part and the base substrate, the first partition part comprises a single-layer first partition layer, and the partition structure forms a notch on a side of the first partition layer; The cathode layer is disconnected at the notch to form a first cathode part and a second cathode part that are independent of each other, the first cathode part is located on the side of the second partition part that is away from the base substrate, and the second cathode part is electrically connected to the auxiliary electrode layer at the notch.

2. The display panel according to claim 1, characterized in that: The display panel further includes a connecting electrode layer, the connecting electrode layer is located between the first partition layer and the auxiliary electrode layer, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch through the connecting electrode layer.

3. The display panel according to claim 2, characterized in that: The connecting electrode layer includes a single film layer.

4. The display panel according to claim 2, characterized in that: The orthographic projection of the first partition layer on the base substrate is located inside the orthographic projection of the second partition portion on the base substrate, and the orthographic projection of the edge portion of the second partition portion on the base substrate surrounds the orthographic projection of the first partition layer on the base substrate; The orthographic projection of the second partition portion on the base substrate is located inside the orthographic projection of the connecting electrode layer on the base substrate, and the orthographic projection of the edge portion of the connecting electrode layer on the base substrate surrounds the orthographic projection of the second partition portion on the base substrate.

5. The display panel according to any one of claims 1 to 4, characterized in that: The first isolation layer includes a columnar polycrystalline silicon nitride film layer.

6. The display panel according to claim 5, characterized in that: The second barrier portion includes a single-layer second barrier layer.

7. The display panel according to any one of claims 1 to 4, characterized in that: The first barrier layer includes a single conductive metal layer.

8. The display panel according to claim 7, characterized in that: The second partition portion includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer, wherein the columnar polycrystalline silicon nitride film layer is located between the indium tin oxide layer and the base substrate; an orthographic projection of the columnar polycrystalline silicon nitride film layer on the base substrate coincides with an orthographic projection of the indium tin oxide layer on the base substrate.

9. The display panel according to any one of claims 2 to 4, characterized in that: The display panel also includes a light-emitting functional layer, which is disconnected at the recess to form a first light-emitting functional part and a second light-emitting functional part that are independent of each other, wherein the first light-emitting functional part is located between the first cathode part and the second partition part, and at least part of the second light-emitting functional part is located between the second cathode part and the connecting electrode layer.

10. The display panel according to claim 1, characterized in that: The auxiliary electrode layer includes auxiliary electrode lines and a plurality of auxiliary electrode patterns respectively coupled to the auxiliary electrode lines, and the plurality of auxiliary electrode patterns are sequentially arranged along the extending direction of the auxiliary electrode lines; The partition structure is located at a side of the auxiliary electrode pattern facing away from the base substrate, and the second cathode portion is electrically connected to the auxiliary electrode pattern at the notch.

11. A display device, characterized in that: The invention comprises the display panel according to any one of claims 1 to 10.

12. A method for manufacturing a display panel, characterized in that: Used to manufacture a display panel as claimed in any one of claims 1 to 10; the manufacturing method comprises: forming an auxiliary electrode layer on the base substrate; A partition structure is formed on a side of the auxiliary electrode layer facing away from the base substrate, wherein the partition structure comprises a first partition portion and a second partition portion which are stacked, wherein the first partition portion is located between the second partition portion and the base substrate, wherein the first partition portion comprises a single-layer first partition layer, and wherein the partition structure forms a notch on a side surface of the first partition layer; A cathode layer is manufactured, and the cathode layer is disconnected at the notch to form a first cathode part and a second cathode part which are independent of each other, wherein the first cathode part is located on the side of the second partition part which is away from the base substrate, and the second cathode part is electrically connected to the auxiliary electrode layer at the notch.

13. The method for manufacturing a display panel according to claim 12, characterized in that: The steps of making the partition structure specifically include: Depositing to form a first partition material layer; Depositing a second partition material layer on a side of the first partition material layer facing away from the substrate; The second partition part material layer and the first partition material layer are patterned simultaneously by using an etching process to form the first partition layer and the second partition part.

14. The method for manufacturing a display panel according to claim 13, characterized in that: The first partition layer includes a columnar polycrystalline silicon nitride film layer, and the second partition portion includes a single-layer second partition layer; the steps of manufacturing the partition structure specifically include: Depositing to form a columnar polycrystalline silicon nitride film; Depositing a second partition material layer on a side of the columnar polycrystalline silicon nitride film facing away from the substrate; The second partition material layer and the columnar polycrystalline silicon nitride film are patterned simultaneously by using an etching process to form the columnar polycrystalline silicon nitride film layer and the second partition layer.

15. The method for manufacturing a display panel according to claim 13, characterized in that: The first partition layer includes a single conductive metal layer, and the second partition portion includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer; the steps of manufacturing the partition structure specifically include: Depositing to form a conductive metal material layer; Depositing a columnar polycrystalline silicon nitride film on a side of the conductive metal material layer facing away from the substrate; Depositing an indium tin oxide material layer on a side of the columnar polycrystalline silicon nitride film facing away from the substrate; The indium tin oxide material layer, the columnar polycrystalline silicon nitride film and the conductive metal material layer are patterned simultaneously by an etching process to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the base substrate coincides with the orthographic projection of the indium tin oxide layer on the base substrate.

16. The method for manufacturing a display panel according to claim 14 or 15, characterized in that: The steps of depositing and forming a columnar polycrystalline silicon nitride film specifically include: Silane and nitrogen in a ratio of 1:30 to 1:100 are used to deposit a columnar polycrystalline silicon nitride film at a process temperature below 230°C using a plasma vapor deposition method.

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