Light-emitting device, light-emitting module, and plurality of light-emitting devices

Abstract

Provided is a light-emitting device in which two semiconductor laser elements having different lengths in the resonator direction can share a base of the same design. The light-emitting device includes: a plurality of semiconductor laser elements having a light emission surface and a first side surface opposite to the light emission surface; a plurality of protection elements; a plurality of susceptors each having a wiring layer having a first region on which the semiconductor laser element is placed and a second region on which the protection element is placed; in a plan view, the first protection element is not disposed between a first imaginary straight line passing through the light emission surface of the first semiconductor laser element and a second imaginary straight line passing through the first side surface of the first semiconductor laser element. A part or all of the second protection element is disposed between a third imaginary straight line passing through the light emission surface of the second semiconductor laser element and a fourth imaginary straight line passing through the first side surface of the second semiconductor laser element. The midpoint of the width of the light exit surface of the semiconductor laser element is not consistent with the midpoint of the width of the susceptor.

Description

Technical Field

[0001] The present invention relates to a light-emitting device, a light-emitting module, and a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device. Background Art

[0002] Japanese Unexamined Patent Application Publication No. 2023-164346 discloses that when the light-emitting surface of a semiconductor laser element is a side surface facing forward, on the mounting surface of a base, the semiconductor laser element and a protective element are arranged such that the protective element is located further rearward than the rear side surface of the semiconductor laser element.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2023-164346 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] An invention is disclosed that solves the problem of realizing a light-emitting device or a light-emitting module in which two semiconductor laser elements having different lengths in the resonator direction can share a base with the same design.

[0008] Alternatively, an invention is disclosed that, instead of the above problem, solves the problem of being able to share a base with the same design for a first light-emitting device and a second light-emitting device each having a semiconductor laser element with different lengths in the resonator direction.

[0009] Alternatively, an invention is disclosed that, instead of the above problems, solves the problem of realizing a light-emitting device or a light-emitting module that is a small light-emitting device.

[0010] Alternatively, an invention is disclosed that, instead of the above problems, solves the problem of realizing a light-emitting device or a light-emitting module that emits light that is easy to optically design.

[0011] Alternatively, an invention is disclosed that, instead of the above problems, solves the problem of realizing a first light-emitting device and a second light-emitting device that can reduce the deviation of the light-emitting position when mounted in the same orientation and when mounted oppositely.

[0012] It should be noted that in this specification, an invention that solves a plurality of the above problems in a combined manner is also disclosed.

[0013] Technical Solution for Solving the Problem

[0014] The light-emitting device disclosed in the embodiment includes: a plurality of semiconductor laser elements, each having a light-emitting surface and a first side surface on the side opposite to the light-emitting surface; a plurality of protection elements, including a first protection element and a second protection element; a plurality of bases, each having a wiring layer and a mounting surface on which the wiring layer is provided, the wiring layer having a first region for mounting the semiconductor laser element and a second region for mounting the protection element; the plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element having a length in the resonator direction greater than that of the first semiconductor laser element, the plurality of bases include a first base for mounting the first semiconductor laser element and the first protection element, and a second base for mounting the second semiconductor laser element and the second protection element. In a plan view, the first protection element is not disposed between a first imaginary line and a second imaginary line. The first imaginary line passes through the light-emitting surface of the first semiconductor laser element and is parallel. The second imaginary line passes through the first side surface of the first semiconductor laser element and is parallel. In a plan view, a part or all of the second protection element is disposed between a third imaginary line and a fourth imaginary line. The third imaginary line passes through the light-emitting surface of the second semiconductor laser element and is parallel. The fourth imaginary line passes through the first side surface of the second semiconductor laser element and is parallel. In a plan view, in a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first base. In a plan view, in a direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second base.

[0015] In addition, the light-emitting module disclosed in the embodiment includes: a first light-emitting device; a second light-emitting device; a mounting substrate for mounting the first light-emitting device and the second light-emitting device; the first light-emitting device includes: a plurality of first semiconductor laser elements each having a light-emitting surface and a first side surface on a side opposite to the light-emitting surface; a plurality of first protection elements; a plurality of first bases each having a first wiring layer and a first mounting surface for setting the first wiring layer, the first wiring layer having a first region for placing the first semiconductor laser element and a second region for placing the first protection element; the second light-emitting device includes: a plurality of second semiconductor laser elements each having a light-emitting surface and a second side surface on a side opposite to the light-emitting surface; a plurality of second protection elements; a plurality of second bases each having a second wiring layer and a second mounting surface for setting the second wiring layer, the second wiring layer having a first region for placing the second semiconductor laser element and a second region for placing the second protection element, the shape of the first wiring layer observed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer observed from a direction perpendicular to the second mounting surface, in a top view, the first protection element is not arranged between a first imaginary straight line and a second imaginary straight line, the first imaginary straight line passes through the light-emitting surface of the first semiconductor laser element and is parallel, the second imaginary straight line passes through the first side surface of the first semiconductor laser element and is parallel, in a top view, a part or all of the second protection element is arranged between a third imaginary straight line and a fourth imaginary straight line, the third imaginary straight line passes through the light-emitting surface of the second semiconductor laser element and is parallel, the fourth imaginary straight line passes through the first side surface of the second semiconductor laser element and is parallel, in a top view, regarding a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first base, in a top view, regarding a direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second base.

[0016] In addition, the plurality of light-emitting devices disclosed in the embodiment include a first light-emitting device and a second light-emitting device. The first light-emitting device includes: a plurality of first semiconductor laser elements, each having a light-emitting surface and a first side surface on the side opposite to the light-emitting surface; a plurality of first protection elements; and a plurality of first pedestals each having a first wiring layer and a first mounting surface. The first wiring layer has a first region for mounting the first semiconductor laser element and a second region for mounting the first protection element. The first mounting surface is provided with the first wiring layer. The second light-emitting device includes: a plurality of second semiconductor laser elements, each having a light-emitting surface and a second side surface on the side opposite to the light-emitting surface; a plurality of second protection elements; and a plurality of second pedestals each having a second wiring layer and a second mounting surface for disposing the second wiring layer. The second wiring layer has a first region for mounting the second semiconductor laser element and a second region for mounting the second protection element. The shape of the first wiring layer viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer viewed from a direction perpendicular to the second mounting surface. In a top view, the first protection element is not disposed between a first imaginary line and a second imaginary line. The first imaginary line passes through the light-emitting surface of the first semiconductor laser element and is parallel. The second imaginary line passes through the first side surface of the first semiconductor laser element and is parallel. In a top view, a part or all of the second protection element is disposed between a third imaginary line and a fourth imaginary line. The third imaginary line passes through the light-emitting surface of the second semiconductor laser element and is parallel. The fourth imaginary line passes through the first side surface of the second semiconductor laser element and is parallel. In a top view, with respect to a direction parallel to the light-emitting surface of the first semiconductor laser element, the midpoint of the width of the light-emitting surface of the first semiconductor laser element does not coincide with the midpoint of the width of the first pedestal. In a top view, with respect to a direction parallel to the light-emitting surface of the second semiconductor laser element, the midpoint of the width of the light-emitting surface of the second semiconductor laser element does not coincide with the midpoint of the width of the second pedestal.

[0017] According to at least one of one or more inventions disclosed in the embodiment, two semiconductor laser elements having different lengths in the resonator direction can share pedestals of the same design. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a perspective view of the light-emitting device of each embodiment.

[0019] Figure 2 is a side view of the light-emitting device of each embodiment.

[0020] Figure 3 is Figure 1Cross-sectional views of the light-emitting devices of the first and third embodiments taken along the III-III section line.

[0021] Figure 4 It is a top view for explaining the internal structure of the light-emitting device of the first embodiment.

[0022] Figure 5 It is from Figure 4 Top view of the state where the wiring has been removed.

[0023] Figure 6 It is a top view of the base of each embodiment.

[0024] Figure 7A It is a top view of the state where the first semiconductor laser element and the protection element are placed on the base.

[0025] Figure 7B It is a top view of the state where the second semiconductor laser element and the protection element are placed on the base.

[0026] Figure 8 It is a side view of the state where the semiconductor laser element and the protection element are placed on the base.

[0027] Figure 9 It is a perspective view of the package of each embodiment.

[0028] Figure 10 It is Figure 9 Cross-sectional view of the package taken along the X-X section line.

[0029] Figure 11 It is a top view of the base body of each embodiment.

[0030] Figure 12 It is a bottom view of the base body of each embodiment.

[0031] Figure 13 It is Figure 11 Cross-sectional view of the base body taken along the XIII-XIII section line.

[0032] Figure 14A It is a top view for explaining an example of the internal structure of the light-emitting device of the second embodiment.

[0033] Figure 14B It is a top view of the state where the first semiconductor laser element and the protection element are placed on the base in an example of the light-emitting device of the second embodiment.

[0034] Figure 14C It is a side view of the state where the semiconductor laser element and the protection element are placed on the base in the light-emitting device of the second embodiment.

[0035] Figure 15AIt is a top view showing another example of the internal structure of the light-emitting device according to the second embodiment.

[0036] Figure 15B It is a top view showing a state in which the second semiconductor laser element and the protection element are placed on the base in another example of the light-emitting device according to the second embodiment.

[0037] Figure 16 It is a perspective view of the light-emitting module according to the third embodiment.

[0038] Figure 17A It is a top view for explaining the internal structure of the first light-emitting device according to the third embodiment.

[0039] Figure 17B It is from Figure 17A A top view of the state where the wiring has been removed.

[0040] Figure 17C It is a top view for explaining the internal structure of the second light-emitting device according to the third embodiment.

[0041] Figure 17D It is from Figure 17C A top view of the state where the wiring has been removed.

[0042] Figure 18 It is a top view of the wiring board according to the third embodiment.

[0043] Figure 19 It is a top view for explaining the internal structures of the first light-emitting device and the second light-emitting device in the light-emitting module according to the third embodiment. Detailed implementation mode

[0044] In this specification or the scope of the technical solution, regarding polygons such as triangles and quadrilaterals, it also includes the shapes after processing such as rounding, chamfering, beveling, and filleting the corners of the polygons, and is called a polygon. In addition, not limited to the corners (ends of the sides), the shapes after processing the middle parts of the sides are also called polygons in the same way. That is to say, the shapes based on polygons and with partial processing are included in the interpretation of "polygon" described in this specification and the scope of the technical solution.

[0045] Not limited to polygons, the same applies to terms representing specified shapes such as trapezoids, circles, concavities and convexities. In addition, the same applies to each side to be formed into the shape. That is to say, even if the corners or the middle parts are processed on a certain side, the processed parts are also included in the interpretation of "side". It should be noted that when distinguishing between the "polygon" and "side" without partial processing and the shapes with processing, "strict" is used, for example, denoted as "strict quadrilateral", etc.

[0046] In this specification or within the scope of the technical solution, descriptions such as up and down (above / below), degree, front and back surfaces, front and back (front / rear), near front and depth, etc. only illustrate relative positional, orientational, directional, etc. relationships, and may also be inconsistent with the relationships during use.

[0047] In addition, in the drawings, sometimes arrows are used to indicate directions such as the X direction, Y direction, and Z direction. The directions of these arrows are consistent among multiple drawings of the same embodiment. Also, in the drawings, the directions of the arrows marked with X, Y, and Z are regarded as the positive directions, and the opposite directions are regarded as the negative directions. For example, the direction with the arrow tip marked with X is the X direction and is the positive direction. It should be noted that in this specification, the direction that is the X direction and the positive direction is referred to as "the positive direction of X", and the opposite direction is referred to as "the negative direction of X". When referring to the "X direction", it includes either the positive direction or the negative direction. The same applies to the Y direction and Z direction.

[0048] In this specification, when specifying an object as "one or more" and explaining the object, the ways in which the object is one and the ways in which the object is multiple will be separately and centrally explained. Thus, through the explanation specifying "one or more", any of the embodiments with one or more objects, embodiments with at least one object, and embodiments with multiple objects are supported.

[0049] In this specification, the description of the object of "1 or respectively" records the centralized description of one object in the embodiment with one object, one object in the embodiment with multiple objects, and multiple objects respectively in the embodiment with multiple objects. Therefore, through the description of the object of "1 or respectively", the situation where the one object in the embodiment with one object has the description content, at least one of these objects in the embodiment with multiple objects has the description content, each of these multiple objects in the embodiment with multiple objects has the description content, and all objects in the embodiment with one or more objects have the description content are all supported.

[0050] In addition, in this specification, for example, when explaining the main parts of the structure, etc., it is sometimes recorded as "component", "part". A "component" refers to an object physically regarded as a single entity. An object physically regarded as a single entity may also refer to an object regarded as one fitting in the manufacturing process. On the other hand, a "part" refers to an object that may not be physically regarded as a single entity. For example, when partially extracting a part of a component, and when grasping multiple components as one object, etc., "part" can be used.

[0051] The distinction in writing between the above-mentioned "component" and "part" is not intended to consciously limit the scope of rights in the interpretation of the doctrine of equivalents. That is, even if there is a main part of the structure denoted as "component" within the scope of the technical solution, the applicant does not solely consider that the main part of the structure must be physically treated as a single entity and is necessary and indispensable in the application of the present invention.

[0052] In this specification or within the scope of the technical solution, where there are multiple main parts of a certain structure and they are expressed separately, "first" and "second" are marked in front of the main part of the structure for distinction. There may be cases where the objects for distinction are different in this specification and within the scope of the technical solution. Therefore, even if there is a main part of the structure with the same marking as in this specification within the scope of the technical solution, the objects designated by the main part of the structure may be inconsistent between this specification and the scope of the technical solution.

[0053] For example, in this specification, there are main parts of the structure distinguished by marking "first", "second", and "third". When the main parts of the structure marked "first" and "third" in this specification are described within the scope of the technical solution, for the sake of easy understanding, sometimes "first" and "second" are marked in the scope of the technical solution to distinguish the main parts of the structure. In this case, the main parts of the structure marked "first" and "second" in the scope of the technical solution respectively refer to the main parts of the structure marked "first" and "third" in this specification. The application object of this rule is not limited to the main part of the structure, and it can also be reasonably and flexibly applied to other objects.

[0054] Next, the embodiments for implementing the present invention will be described. With reference to the accompanying drawings, the specific embodiments for implementing the present invention will be described. The embodiments for implementing the present invention are not limited to this specific embodiment. That is, the illustrated embodiments are not the only ways to implement the present invention. The sizes, positional relationships, etc. of the components shown in each drawing are sometimes exaggerated for the sake of easy understanding.

[0055] <First Embodiment>

[0056] The light-emitting device 1 of the first embodiment will be described. Figures 1 to 13 It is a drawing for illustrating an exemplary embodiment of the light-emitting device 1. Figure 1 It is a perspective view of the light-emitting device 1. Figure 2 It is a side view of the light-emitting device 1. Figure 3 It is Figure 1 A sectional view of the light-emitting device 1 along the III-III section line of Figure 4 It is a top view for illustrating the internal structure of the light-emitting device 1. Figure 5 It is from Figure 4 A top view of the state where the wiring 60 is removed. Figure 6is a top view of the base 30. Figure 7A is a top view of a state where the first semiconductor laser element 20A and the first protection element 50A are placed on the first base 30A. Figure 7B is a top view of a state where the second semiconductor laser element 20B and the second protection element 50B are placed on the second base 30B. Figure 8 is a side view of a state where the semiconductor laser element 20 and the protection element 50 are placed on the base 30. Figure 9 is a perspective view of the package 10. Figure 10 is Figure 9 a sectional view of the package 10 along the X-X section line of Figure 11 is a top view of the base body 11. Figure 12 is a bottom view of the base body 11. Figure 13 is Figure 11 a sectional view of the base body 11 along the XIII-XIII section line of

[0057] The light-emitting device 1 includes a plurality of main structural parts. The plurality of main structural parts include a package 10, one or more semiconductor laser elements 20, one or more bases 30, one or more reflection members 40, one or more protection elements 50, a plurality of wirings 60, and an optical member 70.

[0058] It should be noted that the light-emitting device 1 may also include other main structural parts. For example, in addition to one or more semiconductor laser elements 20, the light-emitting device 1 may also include semiconductor laser elements. In addition, the light-emitting device 1 may not include some of the plurality of main structural parts listed here.

[0059] First, each main structural part will be described.

[0060] (Package 10)

[0061] The package 10 includes a base body 11 and a lid 14. The lid 14 is joined to the base body 11 to form the package 10. In the package 10, the internal space for arranging other main structural parts is partitioned. This internal space is a closed space surrounded by the base body 11 and the lid 14. In addition, this internal space can be a space sealed in a vacuum or airtight state.

[0062] When viewed from above, the outer edge shape of the package 10 is rectangular. This rectangle can be a rectangle with a long side and a short side. In the illustrated package 10, the long side direction of this rectangle is the same as the X direction, and the width direction is the same as the Y direction. It should be noted that when viewed from above, the outer edge shape of the package 10 may not be rectangular.

[0063] In the package 10, an internal space is formed for the arrangement of the main parts of other structures. The first upper surface 11A of the package 10 is part of the area that divides the internal space. In addition, each inner side surface 11E and the lower surface 14B of the package 10 are part of the area that divides the internal space.

[0064] The base body 11 has a first upper surface 11A and a lower surface 11B. The base body 11 has a second upper surface 11C. The base body 11 has one or more outer side surfaces 11D. The base body 11 has one or more inner side surfaces 11E. One or more outer side surfaces 11D intersect with the second upper surface 11C. One or more outer side surfaces 11D intersect with the lower surface 11B. One or more inner side surfaces 11E intersect with the second upper surface 11C.

[0065] When viewed from above, the outer edge shape of the base body 11 is rectangular. When viewed from above, the outer edge shape of the base body 11 is the outer edge shape of the package 10. When viewed from above, the outer edge shape of the first upper surface 11A is rectangular. This rectangle can be a rectangle with a long side and a short side. The long side direction of the first upper surface 11A is parallel to the long side direction of the outer edge shape of the base body 11. It should be noted that when viewed from above, the outer edge shape of the first upper surface 11A may not be rectangular either.

[0066] When viewed from above, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface that surrounds the first upper surface 11A when viewed from above. The second upper surface 11C is a rectangular annular surface. Here, the frame defined by the inner edge of the second upper surface 11C is called the inner frame of the second upper surface 11C, and the frame defined by the outer edge of the second upper surface 11C is called the outer frame of the second upper surface 11C.

[0067] The base body 11 has a recess surrounded by the frame formed by the second upper surface 11C. The recess divides the recessed part in the base body 11 that is closer to the lower side than the second upper surface 11C. The first upper surface 11A is part of the recess. One or more inner side surfaces 11E are part of the recess. The second upper surface 11C is located at a position higher than the first upper surface 11A.

[0068] The base body 11 has one or more stepped portions 11F. The stepped portion 11F has an upper surface 11G and a side surface 11H that intersects with the upper surface 11G and extends downward from the upper surface 11G. Here, the surfaces of one stepped portion 11F are only one upper surface 11G and one side surface 11H. The upper surface 11G intersects with the inner side surface 11E. The side surface 11H intersects with the first upper surface 11A.

[0069] In a top view, one or each of the stepped portions 11F is provided inside the inner frame of the second upper surface 11C. In a top view, one or each of the stepped portions 11F is formed along a part or all of the inner side surface 11E. In the base body 11, the side surface 11H is an inner side surface, but the side surface 11H and the inner side surface 11E are different surfaces. One or each of the inner side surfaces 11E and one or each of the side surfaces 11H are perpendicular to the first upper surface 11A. A difference of ±3 degrees is allowed for the perpendicularity here.

[0070] One or more stepped portions 11F may include a first stepped portion 11F1 and a second stepped portion 11F2. The first stepped portion 11F1 and the second stepped portion 11F2 are provided at positions opposite to each other side surface 11H. The first stepped portion 11F1 and the second stepped portion 11F2 are provided on the short side of the inner frame of the second upper surface 11C.

[0071] One or each of the inner side surfaces 11E and one or each of the side surfaces 11H are between the first upper surface 11A and the second upper surface 11C. One or more inner side surfaces 11E include a first inner side surface 11E1 and a second inner side surface 11E2 that face each other. The base body 11 includes a first side surface 11H1 and a second side surface 11H2 that face each other and has a plurality of side surfaces 11H.

[0072] The first inner side surface 11E1 intersects with the upper surface 11G of the first stepped portion 11F1. The second inner side surface 11E2 intersects with the upper surface 11G of the second stepped portion 11F2. The first side surface 11H1 is the side surface 11H of the first stepped portion 11F1, and the second side surface 11H2 is the side surface 11H of the second stepped portion 11F2.

[0073] The base body 11 has a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be components made of different materials. The base body 11 may be configured to include a base member corresponding to the base portion 11M and a frame member corresponding to the frame portion 11N.

[0074] The base portion 11M includes the first upper surface 11A. The frame portion 11N includes the second upper surface 11C. The frame portion 11N includes one or more outer side surfaces 11D and one or more inner side surfaces 11E. The frame portion 11N includes one or more stepped portions 11F.

[0075] The lower surface of the base portion 11M constitutes a part or all of the area of the lower surface 11B of the base body 11. In the case where the lower surface of the base portion 11M constitutes a part of the area of the lower surface 11B of the base body 11, the lower surface of the frame portion 11N constitutes the remaining area of the lower surface 11B of the base body.

[0076] The substrate 11 has a plurality of wiring portions 12A. The plurality of wiring portions 12A include one or more first wiring portions 12A1 disposed in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0077] One or each of the first wiring portions 12A1 is disposed on the upper surface 11G of the stepped portion 11F. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the first stepped portion 11F1. The substrate 11 has one or more first wiring portions 12A1 disposed on the upper surface 11G of the second stepped portion 11F2.

[0078] One or each of the second wiring portions 12A2 is disposed on the lower surface 11B of the package 10. One or each of the second wiring portions 12A2 is disposed on the lower surface of the frame portion 11N. It should be noted that the second wiring portion 12A2 may also be disposed on an outer surface different from the lower surface 11B of the package 10.

[0079] In a plan view, when the substrate 11 is divided into two regions by an imaginary line passing through the side surface 11H of the first stepped portion 11F1 and parallel to the side surface 11H, one or more second wiring portions 12A2 disposed on the lower surface 11B of the substrate 11 are provided in the region including the upper surface 11G of the first stepped portion 11F1.

[0080] In a plan view, when the substrate 11 is divided into two regions by an imaginary line passing through the side surface 11H of the second stepped portion 11F2 and parallel to the side surface 11H, one or more second wiring portions 12A2 disposed on the lower surface 11B of the substrate 11 are provided in the region including the upper surface 11G of the second stepped portion 11F2.

[0081] In the substrate 11, one or each of the first wiring portions 12A1 is electrically connected to the second wiring portion 12A2. One or more first wiring portions 12A1 are electrically connected to different second wiring portions 12A2.

[0082] The substrate 11 has a bonding pattern 13A. The bonding pattern 13A is disposed on the second upper surface 11C. The bonding pattern 13A is provided in a ring shape. The bonding pattern 13A is provided in a rectangular ring shape. In a plan view, the first upper surface 11A is surrounded by the bonding pattern 13A.

[0083] The substrate 11 can be formed using, for example, ceramics as the main material. Examples of the ceramics as the main material of the substrate 11 include aluminum nitride, silicon nitride, alumina, or silicon carbide.

[0084] Here, the main material refers to the material that occupies the largest proportion in terms of mass or volume in the formation being targeted. It should be noted that in the case where the formation being targeted is formed of a single material, that material is the main material. In other words, a certain material being the main material can include the case where the proportion of that material is 100%.

[0085] The base body 11 can also be formed by using a base member and a frame member formed of different main materials. The base member can be formed by using, for example, a material with excellent heat dissipation such as metal or a composite containing metal, graphite, diamond, etc. as the main material. Examples of the metal as the main material of the base member include copper, aluminum, or iron. Examples of the composite containing metal as the main material of the base member include copper molybdenum or copper tungsten. The frame member, for example, can be formed by using the ceramics listed as the main material of the above-mentioned base body 11 as the main material.

[0086] The wiring portion 12A, for example, can be formed by using a metal material as the main material. Examples of the metal material as the main material of the wiring portion 12A include elemental metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, W, etc. or alloys containing these metals. The wiring portion 12A can be formed of one or more metal layers, for example.

[0087] The bonding pattern 13A, for example, can be formed by using a metal material as the main material. Examples of the metal material as the main material of the bonding pattern 13A include elemental metals such as Cu, Ag, Ni, Au, Sn, Ti, Pd, etc. or alloys containing these metals. The bonding pattern 13A can be formed of one or more metal layers, for example.

[0088] The cover body 14 has an upper surface 14A and a lower surface 14B. In addition, the cover body 14 has one or more side surfaces 14C. The cover body 14 is configured in the shape of a cubic flat plate. It should be noted that the shape of the cover body 14 may not be cubic.

[0089] The cover body 14 is joined to the base body 11. The lower surface 14B of the cover body 14 is joined to the second upper surface 11C of the base body 11. The cover body 14 is joined to the bonding pattern 13A of the base body 11. The cover body 14 is joined to the base body 11 by an adhesive.

[0090] The cover body 14 has light transmissibility that allows light to pass through. Here, the light transmissibility means that the light transmittance of the light incident on the cover body 14 is 80% or more. It should be noted that a part of the cover body 14 may also have a non-light-transmitting region (a region that does not have light transmissibility).

[0091] The cover body 14, for example, can be formed by using glass as the main material. The cover body 14, for example, can also be formed by using sapphire as the main material.

[0092] (Semiconductor laser element 20)

[0093] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of side surfaces 21C. The shape of the upper surface 21A is a rectangle having a long side and a short side. The outer shape of the semiconductor laser element 20 in a top view is a rectangle having a long side and a short side. It should be noted that the shape of the upper surface 21A and the outer shape of the semiconductor laser element 20 in a top view are not limited thereto.

[0094] The semiconductor laser element 20 has a light emitting surface 22 for emitting light. For example, the side surface 21C can be the light emitting surface 22. The side surface 21C as the light emitting surface 22 intersects the short side of the upper surface 21A. In addition, for example, the upper surface 21A can be the light emitting surface 22.

[0095] The plurality of side surfaces 21C includes a first side surface 21C1 which is the side opposite to the light emitting surface 22. The first side surface 21C1 intersects the short side of the upper surface 21A. In the semiconductor laser element 20, the resonator extends in a direction perpendicular to the light emitting surface 22. The direction perpendicular to the light emitting surface 22 is called the resonator direction.

[0096] The length of the semiconductor laser element 20 in the resonator direction is greater than the length in the direction parallel to the light emitting surface 22. In the illustrated semiconductor laser element 20, the resonator direction of the semiconductor laser element 20 is the same direction as the Y direction. In addition, the resonator direction is parallel to the long side direction of the outer shape of the semiconductor laser element 20 in a top view.

[0097] The semiconductor laser element 20 can be a single emitter semiconductor laser element composed of one emitter. In addition, the semiconductor laser element 20 can be a multi-emitter semiconductor laser element composed of a plurality of emitters.

[0098] The semiconductor laser element 20 can be, for example, a semiconductor laser element that emits blue light. In addition, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits green light. In addition, for example, the semiconductor laser element 20 can be a semiconductor laser element that emits red light. It should be noted that the semiconductor laser element 20 can also be a semiconductor laser element that emits light of other colors or wavelengths.

[0099] Here, blue light refers to light whose emission peak wavelength is in the range of 420 nm to 494 nm. Green light refers to light whose emission peak wavelength is in the range of 495 nm to 570 nm. Red light refers to light whose emission peak wavelength is in the range of 605 nm to 750 nm.

[0100] As the semiconductor laser element 20 that emits blue light, or as the semiconductor laser element 20 that emits green light, a semiconductor laser element including a nitride semiconductor can be cited. As the nitride semiconductor, GaN-based semiconductors such as GaN, InGaN, and AlGaN can be used, for example. As the semiconductor laser element 20 that emits red light, a semiconductor laser element including InAlGaP-based, GaInP-based, and GaAs-based semiconductors such as GaAs and AlGaAs can be cited.

[0101] The semiconductor laser element 20 emits a laser with directivity. The diffused light with an expanded angle is emitted from the light emitting surface 22 (emitting end face) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emitting surface 22. The FFP refers to the shape and light intensity distribution of the emitted light at a position far from the light emitting surface of the semiconductor laser element.

[0102] Here, the light passing through the center of the elliptical shape of the FFP, in other words, the light with the peak intensity in the light intensity distribution of the FFP, is called the light traveling along the optical axis or the light passing through the optical axis. In addition, in the light intensity distribution of the FFP, the light with an intensity of 1 / e2 or more relative to the peak intensity value is called the light of the main part.

[0103] The shape of the FFP of the light emitted from the semiconductor laser element 20 is elliptical, and on a plane parallel to the light emitting surface 22, the aspect ratio in the stacking direction is longer than the direction perpendicular to the stacking direction. The stacking direction refers to the direction in which a plurality of semiconductor layers including the active layer are stacked in the semiconductor laser element 20. The direction perpendicular to the stacking direction can also be called the plane direction of the semiconductor layer. In addition, the major axis direction of the elliptical shape of the FFP can also be called the fast axis direction of the semiconductor laser element 20, and the minor axis direction can also be called the slow axis direction of the semiconductor laser element 20.

[0104] Based on the light intensity distribution of the FFP, the angle of light diffusion at the light intensity of 1 / e2 of the peak light intensity is defined as the divergence angle of the light of the semiconductor laser element 20. Here, the divergence angle of the light is represented by the angle formed by the light with the peak light intensity (the light passing through the optical axis) and the light with the light intensity of 1 / e2 of the peak light intensity. It should be noted that the divergence angle of the light can sometimes be obtained based on the light intensity at half of the peak light intensity in addition to the light intensity of 1 / e2 of the peak light intensity. In the description of this specification, when only "the divergence angle of the light" is mentioned, it refers to the divergence angle of the light at the light intensity of 1 / e2 of the peak light intensity.

[0105] The divergence angle of the light emitted from the semiconductor laser element 20 in the fast axis direction can be 10 degrees or more and less than 40 degrees. In addition, the divergence angle of the light in the slow axis direction can be more than 0 degrees and 15 degrees or less. In addition, the divergence angle of the light in the fast axis direction is greater than the divergence angle in the slow axis direction.

[0106] For example, the divergence angle of the blue light emitted from the semiconductor laser element 20 in the fast axis direction can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 8 degrees. In addition, for example, the divergence angle of the green light emitted from the semiconductor laser element 20 in the fast axis direction can be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 15 degrees. In addition, for example, the divergence angle of the red light emitted from the semiconductor laser element 20 in the fast axis direction can be 20 degrees or more and less than 40 degrees, and the divergence angle in the slow axis direction can be 2 degrees or more and less than 10 degrees.

[0107] (Base 30)

[0108] The base 30 has an upper surface 31A, a lower surface 31B, and one or more side surfaces 31C. The upper surface 31A can be referred to as a mounting surface for mounting the main parts of other structures. The shape of the upper surface 31A is rectangular. The rectangle of the upper surface 31A can have a short side and a long side. It should be noted that the shape of the upper surface 31A may not be rectangular.

[0109] In plan view, the outer shape of the base 30 is rectangular. The rectangle of the base 30 can have a short side and a long side. It should be noted that the outer shape of the base 30 in plan view may not be rectangular. In plan view, the base 30 can have an outer shape in which the length in one direction (hereinafter referred to as the short side direction of the base 30) is less than the length in the direction perpendicular to it (hereinafter referred to as the length direction of the base 30). In the illustrated base 30, the short side direction is the same as the X direction, and the length direction is the same as the Y direction.

[0110] The base 30 can be composed of a substrate 32A and an upper metal member 32B. In addition, the base 30 is further composed of a lower metal member 32C. The upper metal member 32B is provided on the upper surface side of the substrate 32A. The lower metal member 32C is provided on the lower surface side of the substrate 32A. The base 30 is further provided with a wiring layer 33. The wiring layer 33 is provided above the upper metal member 32B.

[0111] The wiring layer 33 is provided on the upper surface 31A of the base 30. The main parts of other structures are placed on the wiring layer 33. The wiring layer 33 has a first region 33A and a second region 33B. Different main parts of the structure are placed on the first region 33A and the second region 33B.

[0112] In a top view, the wiring layer 33 has a rectangular region whose width in the length direction is greater than the width in the short side direction, and a convex-shaped region that extends in the short side direction from the rectangle. This convex shape extends from a corner of the rectangle in the short side direction. In other words, one side of the wiring layer 33 that extends in the short side direction includes a side that extends in the short side direction within the rectangular region and a side that extends in the short side direction within the convex-shaped region.

[0113] In a top view, the first region 33A includes the rectangular region. In a top view, the second region 33B includes the convex-shaped region. In the illustrated base 30, the rectangular region is the first region 33A, and the convex-shaped region is the second region 33B. It should be noted that the shape of the convex-shaped region is a rectangular shape in which the ratio of the width in the length direction to the width in the short side direction is smaller than that of the rectangle of the first region 33A.

[0114] Here, the midpoint of the width of the first region 33A in the short side direction of the base 30 is denoted as midpoint MP1, the midpoint of the width of the base 30 in the short side direction of the base 30 is denoted as midpoint MP2, and the midpoint of the width of the upper surface 31A in the short side direction of the base 30 is denoted as midpoint MP3.

[0115] In a top view, in the short side direction, the midpoint MP1 of the first region 33A does not coincide with the midpoint MP2 of the base 30. In a top view, in the short side direction, the midpoint MP1 of the first region 33A does not coincide with the midpoint MP3 of the upper surface 31A. In a top view, in the short side direction, the midpoint MP2 of the base 30 coincides with the midpoint MP3 of the upper surface 31A. It should be noted that the coincidence here means including a difference within ±60 μm.

[0116] By making the midpoint MP1 not coincide with the midpoint MP2 or the midpoint MP3, compared with the case where the midpoint MP1 coincides with the midpoint MP2 or the midpoint MP3, the width in the short side direction can be increased to a size where the second region 33B can be provided. As a result, it is possible to easily mount the main parts of the structure placed on the first region 33A and the main parts of the structure placed on the second region 33B without contact, and the productivity can be improved.

[0117] In a top view, in the short side direction, the distance from the midpoint MP2 to the midpoint MP1 is 10 μm or more and 200 μm or less. Additionally, this distance is preferably 45 μm or more and 85 μm or less. By setting it to 45 μm or more, it is possible to easily mount the main parts of the structure placed on the second region 33B without contact. By setting it to 85 μm or less, it is possible to suppress to a certain extent the reduction in the heat dissipation performance of the main parts of the structure placed on the first region 33A. The upper limit of this distance can be determined according to the degree of heat dissipation performance required by the main parts of the structure placed on the first region 33A.

[0118] In the longitudinal direction of the base 30, the difference between the width of the first region 33A and the width of the upper surface 31A is 0 or more and 130 μm or less. The wiring layer 33 is formed such that the width of the first region 33A is close to the width in the longitudinal direction of the mounting surface of the base 30. In the short-side direction of the base 30, the second region 33B extends from the boundary with the first region 33A to the end of the upper surface 31A.

[0119] In a plan view, in the longitudinal direction, the width of the second region 33B is 1 / 4 or less of the width of the first region 33A. In a plan view, an imaginary straight line SL1 passing through the midpoint of the width in the longitudinal direction of the base 30 and parallel to the short-side direction passes through the first region 33A and does not pass through the second region 33B.

[0120] The substrate 32A has insulation. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. The main material of the substrate 32A can be selected as a ceramic with relatively good heat dissipation (high thermal conductivity).

[0121] As the main material of the upper metal component 32B, metals such as copper and aluminum are used. The upper metal component 32B has one or more metal layers. The upper metal component 32B can have multiple metal layers with different metals as the main materials.

[0122] As the main material of the lower metal component 32C, metals such as copper and aluminum are used. The lower metal component 32C has one or more metal layers. The lower metal component 32C can have multiple metal layers with different metals as the main materials.

[0123] The wiring layer 33 can be formed using a metal. For example, the wiring layer 33 can be formed using AuSn solder (a metal layer of AuSn).

[0124] For example, the length in the width direction or the short-side direction of the base 30 is 600 μm or more and 900 μm or less. In addition, the length in the long-side direction or the longitudinal direction of the base 30 is 1300 μm or more and 1800 μm or less. In addition, the difference between the length in the longitudinal direction of the base 30 and the length in the short-side direction is 500 μm or more and 900 μm or less.

[0125] For example, the thickness of the base 30 (the width in the direction perpendicular to the upper surface 31A) is 200 μm or more and 400 μm or less. For example, the thickness of the substrate 32A is 140 μm or more and 260 μm or less. For example, the thickness of the upper metal component 32B is 30 μm or more and 70 μm or less. For example, the thickness of the lower metal component 32C is 30 μm or more and 70 μm or less. For example, the thickness of the wiring layer 33 is 1 μm or more and 5 μm or less.

[0126] (Reflection component 40)

[0127] The reflecting member 40 has a lower surface 41A and a light reflecting surface 41B that reflects light. In addition, the light reflecting surface 41B is inclined with respect to the lower surface 41A. The straight line connecting the lower end and the upper end of the light reflecting surface 41B is inclined with respect to the lower surface 41A. The angle at which the light reflecting surface 41B is inclined with respect to the lower surface 41A is referred to as the inclination angle of the light reflecting surface 41B.

[0128] The light reflecting surface 41B is a flat surface. It should be noted that the light reflecting surface 41B may also be a curved surface. The inclination angle of the light reflecting surface 41B is 45 degrees. It should be noted that the inclination angle of the light reflecting surface 41B may not be 45 degrees.

[0129] As the main material of the reflecting member 40, glass, metal, etc. can be used. A heat-resistant material can be used as the main material of the reflecting member 40. As the main material, for example, glass such as quartz or BK7 (borosilicate glass), metals such as Al can be used. The reflecting member 40 can also be formed using Si as the main material.

[0130] If the main material is a reflective material such as Al, the light reflecting surface 41B can be formed of the main material. Instead of forming the light reflecting surface 41B of the main material, the approximate shape of the reflecting member 40 can be formed of the main material, or the light reflecting surface 41B can be formed on the surface of the approximate shape. In this case, the light reflecting surface 41B can be formed by using, for example, metal layers such as Ag and Al and dielectric multilayer films such as Ta2O5 / SiO2, TiO2 / SiO2, and Nb2O5 / SiO2.

[0131] The reflectivity of the light reflecting surface 41B with respect to the peak wavelength of the light irradiated onto the light reflecting surface 41B is 90% or more. In addition, this reflectivity can also be 95% or more. In addition, this reflectivity can also be made 99% or more. The light reflectivity is 100% or less or less than 100%.

[0132] (Protection element 50)

[0133] The protection element 50 has an upper surface 51A, a lower surface 51B, and one or more side surfaces 51C. The shape of the protection element 50 is a cube. It should be noted that the shape of the protection element 50 may not be a cube.

[0134] The protection element 50 is used to prevent excessive current from flowing through a specific element (such as a semiconductor laser element) and being damaged. As the protection element 50, for example, a Zener diode can be cited. In addition, as the Zener diode, one formed of Si can be adopted.

[0135] (Wiring 60)

[0136] The wiring 60 is a linear conductive material with both ends as joint portions. The joint portions at both ends become the joint parts with other main structural parts. The wiring 60 is used for electrical connection between two main structural parts. The wiring 60 is, for example, a metal wire. Metals such as gold, aluminum, silver, copper, etc. can be used.

[0137] (Optical component 70)

[0138] The optical component 70 has an upper surface 71A, a lower surface 71B, and one or more side surfaces 71C. The optical component 70 imparts an optical effect to the light incident on the optical component 70. The optical effects imparted to the light by the optical component 70 include, for example, condensing, collimating, diffusing, polarizing light, diffraction, multiplexing, light guiding, reflection, wavelength conversion, etc.

[0139] The optical component 70 has an optical effect surface that imparts an optical effect. The upper surface 71A, the lower surface 71B, or the side surface 71C can become the optical effect surface. Alternatively, an optical effect surface can be provided at a position different from the upper surface 71A, the lower surface 71B, and the side surface 71C. For example, the optical effect surface can be formed inside rather than on the surface of the optical component 70.

[0140] The optical component 70 may have one or more lens surfaces 71D. The lens surface 71D is the optical effect surface of the optical component 70. It should be noted that the optical component 70 having the lens surface 71D can be referred to as a lens component. The light passing through the lens surface 71D and exiting from the optical component 70 is imparted with an optical effect of condensing, diffusing, or collimating by the optical component 70. For example, the optical component 70 is a collimating lens that makes the light incident on the optical component 70 exit as collimated light.

[0141] One or each of the lens surfaces 71D is provided on the upper surface 71A side. It should be noted that the lens surface 71D can also be provided on the lower surface 71B side. The upper surface 71A and the lower surface 71B are flat surfaces. One or each of the lens surfaces 71D intersects with the upper surface 71A. When viewed from above, one or each of the lens surfaces 71D is surrounded by the upper surface 71A.

[0142] When viewed from above, the outer shape of the optical component 70 is rectangular. It should be noted that the outer shape of the optical component 70 when viewed from above may not be rectangular. The lower surface 71B is a flat surface. The lens surface 71D is not formed on the lower surface 71B side of the optical component 70. The shape of the lower surface 71B is rectangular. It should be noted that the shape of the lower surface 71B may not be rectangular.

[0143] In the optical component 70, the portion that overlaps with the lens surface 71D in a plan view is the lens portion 72A. In the optical component 70, the portion that overlaps with the upper surface 71A in a plan view is the non-lens portion 72B. The lower surface 71B has a region that constitutes the lower surface of one or each lens portion 72A and a region that constitutes the lower surface of the non-lens portion 72B.

[0144] The optical component 70 may have a plurality of lens surfaces 71D continuously formed in one direction. In a plan view, the direction in which the plurality of lens surfaces 71D are arranged is referred to as the lens connection direction. In the illustrated optical component 70, the connection direction and the X direction are the same direction.

[0145] The plurality of lens surfaces 71D are formed such that the vertices of each lens surface 71D are located on a straight line. The imaginary straight line connecting the respective vertices is parallel to the lower surface 71B of the optical component 70. It should be noted that the parallelism here includes a difference within ±5 degrees.

[0146] A part or all of the plurality of lens surfaces 71D, and the curvatures of two or more lens surfaces 71D may be the same. All of the plurality of lens surfaces 71D may have the same curvature.

[0147] The optical component 70 has light transmissibility. The transmittance of the optical component 70 with respect to the peak wavelength of the light incident on the optical component 70 is 80% or more. The optical component 70 may also include a light transmissible region and a non-light transmissible region (hereinafter referred to as a non-transmissive region). In the non-transmissive region, the transmittance with respect to the peak wavelength of the light incident on the optical component 70 is 50% or less. The optical component 70 can be formed of, for example, glass such as BK7.

[0148] Next, the light-emitting device 1 will be described.

[0149] (Light-emitting device 1)

[0150] The light-emitting device 1 includes a plurality of semiconductor laser elements 20 and a plurality of bases 30. The plurality of semiconductor laser elements 20 include a first semiconductor laser element 20A and a second semiconductor laser element 20B having a resonator direction length larger than that of the first semiconductor laser element 20A. The light-emitting device 1 may include a plurality of semiconductor laser elements 20 including one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0151] The length of the second semiconductor laser element 20B in the resonator direction is greater than the length of the first semiconductor laser element 20A in the resonator direction within the range of 200 μm or more and 700 μm or less. The length of one or each of the second semiconductor laser elements 20B in the resonator direction is greater than the length of any of the first semiconductor laser elements 20A in the resonator direction within the range of 200 μm or more and 700 μm or less. By adjusting the length in the resonator direction, the output of the light emitted from the semiconductor laser element 20 can be adjusted.

[0152] The peak emission wavelength of the light emitted from the first semiconductor laser element 20A and the peak emission wavelength of the light emitted from the second semiconductor laser element 20B differ by 30 nm or more. The peak emission wavelength of the light emitted from one or each of the first semiconductor laser elements 20A and the peak emission wavelength of the light emitted from any of the second semiconductor laser elements 20B also differ by 30 nm or more. It should be noted that the difference between the peak emission wavelength of the light emitted from the first semiconductor laser element 20A and the peak emission wavelength of the light emitted from the second semiconductor laser element 20B may also be less than 30 nm. In addition, this difference may also be 10 nm or less.

[0153] One or each of the first semiconductor laser elements 20A emits light with a peak emission wavelength of the first wavelength ±15 nm. One or each of the second semiconductor laser elements 20B emits light with a peak emission wavelength of the second wavelength ±15 nm.

[0154] One or each of the first semiconductor laser elements 20A emits light of a first color. One or each of the second semiconductor laser elements 20B emits light of a second color. The first color and the second color may be different. It should be noted that the color of the light emitted from the first semiconductor laser element 20A and the color of the light emitted from the second semiconductor laser element 20B may also be the same.

[0155] Each semiconductor laser element 20 is mounted on the base 30. Each semiconductor laser element 20 is placed on the wiring layer 33 of the base 30. Each semiconductor laser element 20 is placed in the first region 33A of the wiring layer 33.

[0156] The semiconductor laser element 20 is placed on each of the plurality of bases 30. One base 30 holds one semiconductor laser element 20. Here, among the plurality of bases 30, the base 30 on which the first semiconductor laser element 20A is placed is referred to as the first base 30A, and the base 30 on which the second semiconductor laser element 20B is placed is referred to as the second base 30B for distinction.

[0157] The first base 30A and the second base 30B are bases 30 of the same shape. In a plan view, the wiring layer 33 of the first base 30A and the wiring layer 33 of the second base 30B are of the same shape.

[0158] Regarding each semiconductor laser element 20, the difference in the length in the direction parallel to the light-emitting surface 22 between the first semiconductor laser element 20A and the second semiconductor laser element 20B is 0 or more and 100 μm or less. By setting it to 100 μm or less, it is possible to suppress the difference in the blank space on the mounting surface when the first semiconductor laser element 20A and the second semiconductor laser element 20B are respectively mounted on the base 30 of the same design.

[0159] However, the length of one or each of the first semiconductor laser elements 20A in the direction parallel to the light-emitting surface 22 may also be 100 μm or more greater than the length of any or a specific second semiconductor laser element 20B in the direction parallel to the light-emitting surface 22.

[0160] For example, the light-emitting device 1 may also include one or more first semiconductor laser elements 20A, and the length of the resonator direction of the one or more first semiconductor laser elements 20A is 200 μm or more smaller than that of the second semiconductor laser element 20B, and the length in the direction parallel to the light-emitting surface 22 is greater than that of the second semiconductor laser element 20B in the range of 0 μm or more and 100 μm or less.

[0161] Here, the midpoint of the width of the light-emitting surface 22 in the direction parallel to the light-emitting surface 22 in a top view is denoted as the midpoint MP4, and the midpoint of the width of the base 30 in the direction parallel to the light-emitting surface 22 in a top view is denoted as the midpoint MP5. In the illustrated light-emitting device 1, the short side direction of the base 30 and the direction parallel to the light-emitting surface 22 in a top view are the same direction.

[0162] Regarding a plurality of semiconductor laser elements 20, the distance from the midpoint MP4 of the first semiconductor laser element 20A to the midpoint MP5 of the first base 30A on which the first semiconductor laser element 20A is mounted is the same as the distance from the midpoint MP4 of the second semiconductor laser element 20B to the midpoint MP5 of the second base 30B on which the second semiconductor laser element 20B is mounted. It should be noted that the "same" here includes a difference within ±50 μm. By making these distances the same, it is possible to easily mount the first semiconductor laser element 20A and the second semiconductor laser element 20B on the base 30 of the same design.

[0163] Regarding multiple semiconductor laser elements 20, the distance from the midpoint MP4 of the first semiconductor laser element 20A to the midpoint MP2 of the first base 30A on which the first semiconductor laser element 20A is mounted is the same as the distance from the midpoint MP4 of the second semiconductor laser element 20B to the midpoint MP2 of the second base 30B on which the second semiconductor laser element 20B is mounted. It should be noted that the term "same" here includes a difference within ±50 μm. By making these distances the same, the first semiconductor laser element 20A and the second semiconductor laser element 20B can be easily mounted on bases 30 with the same design.

[0164] In a plan view, one or each of the semiconductor laser elements 20 is arranged such that the light emitting surface 22 is included in a region near the edge of the upper surface 31A. In a plan view, the light emitting surface 22 of one or each of the semiconductor laser elements 20 is arranged between the side surface 31C of the upper metal member 32B and the side surface 31C of the substrate 32A, both of which face the same direction.

[0165] Regarding multiple semiconductor laser elements 20, in a plan view, the distance from the first side surface 21C1 of the first semiconductor laser element 20A to the side surface 31C of the first base 30A facing the same direction as the first side surface 21C1 is greater than the distance from the first side surface 21C1 of the second semiconductor laser element 20B to the side surface 31C of the second base 30B facing the same direction as the first side surface 21C1 by a range of 200 μm or more and 400 μm or less.

[0166] The protection element 50 is mounted on one or each of the bases 30. Here, the protection element 50 mounted on the first base 30A is referred to as the first protection element 50A, and the protection element 50 mounted on the second base 30B is referred to as the second protection element 50B for distinction. The multiple protection elements 50 include one or more first protection elements 50A and one or more second protection elements 50B.

[0167] The multiple bases 30 include one or more first bases 30A on which the first semiconductor laser element 20A and the first protection element 50A are mounted, and one or more second bases 30B on which the second semiconductor laser element 20B and the second protection element 50B are mounted.

[0168] In one or each of the bases 30, the wiring layer 33 has the protection element 50 mounted thereon. Each protection element 50 is mounted in the second region 33B of the wiring layer 33. The first protection element 50A and the second protection element 50B are protection elements 50 having the same shape. It should be noted that the shape of the first protection element 50A and the shape of the second protection element 50B may also be different.

[0169] One or each of the first protection elements 50A is not disposed between a first imaginary line L1 that passes through the light-emitting surface 22 of the first semiconductor laser element 20A and is parallel thereto and a second imaginary line L2 that passes through the first side surface 21C1 of the first semiconductor laser element 20A and is parallel thereto when viewed from above.

[0170] Part or all of one or each of the second protection elements 50B is disposed between a third imaginary line L3 that passes through the light-emitting surface 22 of the second semiconductor laser element 20B and is parallel thereto and a fourth imaginary line L4 that passes through the first side surface 21C1 of the second semiconductor laser element 20B and is parallel thereto when viewed from above. The second protection element 50B is disposed at a position through which the fourth imaginary line L4 passes when viewed from above.

[0171] Regarding one or each of the first semiconductor laser elements 20A, when viewed from above, the midpoint MP4 of the first semiconductor laser element 20A does not coincide with the midpoint MP5 of the first pedestal 30A on which the first semiconductor laser element 20A is mounted. Regarding one or each of the second semiconductor laser elements 20B, when viewed from above, the midpoint MP4 of the second semiconductor laser element does not coincide with the midpoint MP5 of the second pedestal 30B on which the second semiconductor laser element 20B is mounted.

[0172] Thus, even when at least a part of the second protection element 50B is disposed between the third imaginary line L3 and the fourth imaginary line L4, by staggering the midpoint MP4 and the midpoint MP5 so as not to coincide, the second protection element 50B can be stably mounted on the second pedestal 30B. Thereby, the pedestals 30 with the same design can be shared by the two semiconductor laser elements 20 having different lengths in the resonator direction. The sharing of the pedestal 30 helps to improve the productivity of the light-emitting device 1.

[0173] One or each of the protection elements 50 is disposed in the region with the larger area when the upper surface 31A of the pedestal 30 is divided into two regions by an imaginary line SL2 that passes through the midpoint MP1 of the pedestal 30 and is parallel to the length direction of the pedestal 30.

[0174] Here, of the two side surfaces 21C that intersect the light-emitting surface 22 of the semiconductor laser element 20, the side surface 21C closer to the protection element 50 is referred to as the second side surface 21C2, and the side surface 21C farther away from the protection element 50 is referred to as the third side surface 21C3.

[0175] One or each of the protection elements 50 is disposed on the upper surface 31A of the pedestal 30 near the side surface 31C of the pedestal 30 facing the same direction as the first side surface 21C1 and near the side surface 31C of the pedestal 30 facing the same direction as the second side surface 21C2.

[0176] Regarding one or each of the pedestals 30, in a direction parallel to the light-emitting surface 22, the distance from the midpoint MP4 of the semiconductor laser element 20 to the side surface 31C of the pedestal 30 facing the same direction as the third side surface 21C3 is less than or equal to twice the width of the protection element 50. Preferably, this distance is 260 μm or more and 420 μm or less. By setting it to 260 μm or more, the heat dissipation of the semiconductor laser element 20 can be ensured, and by setting it to 420 μm or less, the width of the pedestal 30 in the direction parallel to the light-emitting surface 22 can be suppressed.

[0177] Regarding one or each of the second semiconductor laser elements 20B, in a plan view, in a direction parallel to the light-emitting surface 22 of the second semiconductor laser element 20B, the midpoint MP4 of the second semiconductor laser element 20B is separated from the midpoint MP5 of the second pedestal 30B on which the second semiconductor laser element 20B is placed in a range of 10 μm or more and 200 μm or less. By separating the midpoint MP4 from the midpoint MP5 by 10 μm or more, stable mounting of the semiconductor laser element 20 and the protection element 50 can be achieved. By separating the midpoint MP4 from the midpoint MP5 by no more than 200 μm, sufficient heat dissipation for the semiconductor laser element 20 can be ensured.

[0178] Regarding one or each of the first semiconductor laser elements 20A, in a plan view, in a direction parallel to the light-emitting surface 22 of the first semiconductor laser element 20A, the midpoint MP4 of the first semiconductor laser element 20A is separated from the midpoint MP5 of the first pedestal 30A on which the first semiconductor laser element 20A is placed in a range of 10 μm or more and 200 μm or less.

[0179] Between the first semiconductor laser element 20A and the second semiconductor laser element 20B, the distance in the direction parallel to the light-emitting surface 22 of the semiconductor laser element 20 from the midpoint MP4 of the semiconductor laser element 20 to the midpoint MP5 of the pedestal 30 on which the semiconductor laser element 20 is placed is the same. As a result, the light-emitting points are arranged at equal intervals, and it is easy to arrange a plurality of semiconductor laser elements 20.

[0180] Regarding a plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A placed on the first base 30A and the first protection element 50A is larger than the distance between the second semiconductor laser element 20B placed on the second base 30B and the second protection element 50B. Further, regarding the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A placed on the first base 30A and the first protection element 50A in the direction parallel to the light emitting surface 22 of the semiconductor laser element 20 is the same as the distance between the second semiconductor laser element 20B placed on the second base 30B and the second protection element 50B. Thus, by mounting the semiconductor laser element 20 and the protection element 50 on the base 30, it is possible to share the base 30 with the same design for two semiconductor laser elements having different lengths in the resonator direction.

[0181] Regarding one or each of the first bases 30A, in a plan view, in the resonator direction, the width of the first base 30A is larger than the sum of the widths of the first semiconductor laser element 20A and the first protection element 50A placed on the first base 30A.

[0182] Regarding one or each of the second bases 30B, in a plan view, in the resonator direction, the width of the second base 30B is larger than the sum of the widths of the second semiconductor laser element 20B and the second protection element 50B placed on the second base 30B. Thereby, it is possible to suppress the width of the base 30 from becoming longer in the resonator direction, contributing to the miniaturization of the light emitting device 1.

[0183] A plurality of semiconductor laser elements 20 are arranged in the internal space of the package 10. A plurality of bases 30 are arranged in the internal space of the package 10. A plurality of semiconductor laser elements 20 are arranged on the first upper surface 11A via the bases 30. A plurality of bases 30 are arranged on the first upper surface 11A.

[0184] A plurality of bases 30 are arranged and configured in a row along the first direction above the first upper surface 11A of the base body 11. The plurality of bases 30 are arranged and configured such that the interval between adjacent bases 30 is 300 μm or less. In the illustrated light emitting device 1, the first direction is the same as either the positive direction of X or the negative direction of X.

[0185] A plurality of bases 30 are arranged and configured in the direction in which the first inner side surface 11E1 and the second inner side surface 11E2 face each other. Note that the direction in which the two inner side surfaces face each other means the direction from one inner side surface toward the other inner side surface. A plurality of bases 30 are arranged and configured in the direction in which the first side surface 11H1 and the second side surface 11H2 face each other.

[0186] A plurality of semiconductor laser elements 20 are arranged above the first upper surface 11A of the base 11 in the first direction. The plurality of semiconductor laser elements 20 are respectively arranged above the first upper surface 11A via the pedestals 30.

[0187] The plurality of semiconductor laser elements 20 are arranged at equal intervals in the first direction. The "equal intervals" here include a difference of ±50 μm or less. In the first direction, the plurality of semiconductor laser elements 20 are arranged such that the emission points of the light emitted from the light emission surface 22 are at equal intervals. The "equal intervals" here include a difference of ±50 μm or less.

[0188] The plurality of pedestals 30 are arranged at equal intervals in the first direction. The "equal intervals" here include a difference of ±50 μm or less. In each pedestal 30, the midpoint MP1 of the pedestal 30 is farther from the midpoint MP2 in the first direction. Thereby, the plurality of semiconductor laser elements 20 can be easily arranged at equal intervals in the first direction.

[0189] In each semiconductor laser element 20, the midpoint MP4 of the semiconductor laser element 20 is farther from the midpoint MP5 of the pedestal 30 on which the semiconductor laser element 20 is mounted in the first direction.

[0190] In a plan view, in the first direction, the distance from the pedestal 30 located at the position closest to the first side surface 11H1 among the plurality of pedestals 30 to the first side surface 11H1 is greater than the distance between adjacent pedestals 30 and less than the width of the pedestal 30. By arranging the pedestals 30 in this way, more semiconductor laser elements 20 can be arranged in the internal space of the package 10.

[0191] In a plan view, in the first direction, the distance from the pedestal 30 located at the position closest to the second side surface 11H2 among the plurality of pedestals 30 to the second side surface 11H2 is greater than the distance between adjacent pedestals 30 and less than the width of the pedestal 30. By arranging the pedestals 30 in this way, more semiconductor laser elements 20 can be arranged in the internal space of the package 10.

[0192] In a plan view, in the first direction, the distance from the pedestal 30 arranged at the position closest to the first side surface 11H1 among the plurality of pedestals 30 to the first side surface 11H1 is different from the distance from the pedestal 30 arranged at the position closest to the second side surface 11H2 among the plurality of pedestals 30 to the second side surface 11H2. By arranging the pedestals 30 in this way, the plurality of semiconductor laser elements 20 can be arranged in a manner that is centrosymmetric with respect to the center in the first direction in the internal space of the package 10.

[0193] When viewed from above, in a direction perpendicular to the first direction, i.e., the second direction, the distance from the side surface 31C of the first base 30A facing the same direction as the first side surface 21C1 of the first semiconductor laser element 20A to the inner side surface 11E of the substrate 11 facing the first side surface 21C1 is less than the difference in the resonator direction lengths of the first semiconductor laser element 20A and the second semiconductor laser element 20B plus a distance of 200 μm. In the case of arranging the first base 30A in this way, if a base for mounting the second protection element 50B is used that is far from the second semiconductor laser element 20B in the resonator direction, the light emitting surfaces 22 of the first semiconductor laser element 20A and the second semiconductor laser element 20B are greatly offset in the resonator direction. Therefore, the base 30 having the same design for the first semiconductor laser element 20A and the second semiconductor laser element 20B, like the light emitting device 1, has further advantages.

[0194] Among the plurality of semiconductor laser elements 20, in the two semiconductor laser elements 20 where the distance between the light emitting surfaces 22 in the second direction is the largest, this distance is 100 μm or less. Alternatively, this distance can be 50 μm or less. Or, this distance can be 30 μm or less. The light emitting surfaces 22 of the plurality of semiconductor laser elements 20 are arranged so as not to be greatly offset in the second direction.

[0195] The plurality of semiconductor laser elements 20 each emit light from the light emitting surface 22 in the second direction. Regarding the plurality of semiconductor laser elements 20, the light traveling along the optical axis emitted from the light emitting surface 22 is the light traveling in the second direction. Each semiconductor laser element 20 emits light of the FFP having the second direction as the optical axis from the light emitting surface 22.

[0196] The light emitted from the plurality of semiconductor laser elements 20 can be regarded as a collection of the light emitted from each semiconductor laser element 20. Here, for the light emitted from the plurality of semiconductor laser elements 20, the light emitted from each respective semiconductor laser element 20 is referred to as partial light. The light emitted from the plurality of semiconductor laser elements 20 is composed of a plurality of partial lights.

[0197] In the light emitting device 1, one or more reflection members 40 are arranged in the internal space of the package 10. One or more reflection members 40 are arranged above the first upper surface 11A. One reflection member 40 can be arranged relative to one semiconductor laser element 20. In this case, the main part of the light in one partial light can irradiate the light reflecting surface 41B of one reflection member 40. Additionally, in this case, the main part of the light in the two partial lights does not irradiate the light reflecting surface 41B of one reflection member 40.

[0198] One or more reflecting members 40 reflect the light emitted from the plurality of semiconductor laser elements 20. The light emitted from the plurality of semiconductor laser elements 20 is reflected upward by the light reflecting surface 41B of the one or more reflecting members 40. The light traveling along the optical axis in each part of the light exits from the light emitting surface 22, is reflected by the light reflecting surface 41B, and travels in a direction perpendicular to the first upper surface 11A.

[0199] In a plan view, the plurality of points P1 formed by the points P1 where the light traveling along the optical axis in each of the plurality of part lights irradiates the one or more reflecting members 40 are arranged symmetrically with respect to a first direction with respect to an imaginary straight line SL3 that passes through the midpoint between the two ends in the first direction of the base 11 and is perpendicular to the first direction. Thus, the plurality of part lights can be emitted from the light emitting device 1 using the same line-symmetric arrangement, and the optical design using the light emitted from the light emitting device 1 can be easily performed.

[0200] In a plan view, with respect to the first direction, the distance from the midpoint between the two ends in the first direction of the base 11 to the midpoint between the two ends EP1 in the first direction of the one or more reflecting members 40 is smaller than the distance from the midpoint between the two ends in the first direction of the base 11 to the midpoint between the two ends EP2 in the first direction of the plurality of bases 30. By designing the mounting position with respect to the center in the first direction of the package 10 based on the reflecting member 40 rather than the base 30, the optical design using the light emitted from the light emitting device 1 can be easily performed.

[0201] In the light emitting device 1, a plurality of wirings 60 are arranged in the internal space of the package 10. The plurality of wirings 60 include two or more wirings 60 that electrically connect the plurality of semiconductor laser elements 20 to the base 11. The plurality of wirings 60 include two or more wirings 60 that electrically connect the plurality of protection elements 50 to the base 11. By providing a plurality of wirings 60, electric power can be supplied from an external power source to the plurality of semiconductor laser elements 20 through the base 11.

[0202] The plurality of wirings 60 include two or more wirings 60 that electrically connect one or more first semiconductor laser elements 20A to the base 11. The plurality of wirings 60 include two or more wirings 60 that electrically connect one or more second semiconductor laser elements 20B to the base 11.

[0203] The plurality of wirings 60 include wirings 60 that are joined to the first wiring portion 12A1. The plurality of wirings 60 include wirings 60 that are joined to the first wiring portion 12A1 provided on the first inner side surface 11E1 side and wirings 60 that are joined to the first wiring portion 12A1 provided on the second inner side surface 11E2 side. The plurality of wirings 60 include wirings 60 that are not joined to the first wiring portion 12A1.

[0204] The first wiring portion 12A1 provided on the upper surface 11G of the first stepped portion 11F1 is an example of the first wiring portion 12A1 provided on the first inner side surface 11E1 side, and the first wiring portion 12A1 provided on the upper surface 11G of the second stepped portion 11F2 is an example of the first wiring portion 12A1 provided on the second inner side surface 11E2 side.

[0205] In the light-emitting device 1, the optical component 70 is disposed on the optical path of the light emitted from the plurality of semiconductor laser elements 20. The optical component 70 is fixed to the package 10. The optical component 70 is disposed outside the package 10. The optical component 70 is joined to the upper surface 14A.

[0206] The light emitted from the plurality of semiconductor laser elements 20 is given an optical effect and emitted from the optical component 70. For example, the plurality of partial lights respectively pass through the lens surface 71D to become collimated light and are emitted from the optical component 70. In addition, for example, the plurality of partial lights respectively become light after wavelength conversion and are emitted from the optical component 70.

[0207] Regarding each of the plurality of partial lights, the light passing through the optical axis passes through the optical axis OA of the lens surface 71D of the optical component 70. Regarding the plurality of partial lights, the main part of the light in each partial light passes through different lens surfaces 71D.

[0208] The optical component 70 is disposed in such a manner that the connection direction is the same as the first direction. In a plan view, the optical axes OA in each of the plurality of lens surfaces 71D form a plurality of optical axes OA, and with respect to the first direction, they are symmetrically disposed with respect to an imaginary straight line SL3 passing through the midpoint between the two ends in the first direction of the base 11 and perpendicular to the first direction. Or, the same applies when "optical axis OA" is replaced with "vertex". Thus, the optical design using the light emitted from the light-emitting device 1 can be easily performed.

[0209] In a plan view, with respect to the first direction, the distance from the midpoint between the two ends in the first direction of the base 11 to the midpoint of the vertices of the lens surfaces 71D at both ends among the plurality of lens surfaces 71D arranged in the first direction is smaller than the distance from the midpoint between the two ends in the first direction of the base 11 to the midpoint of the two ends EP2 in the first direction of the plurality of bases 30. By designing the mounting position with respect to the center in the first direction of the package 10 based on the optical component 70 rather than the base 30, the optical design using the light emitted from the light-emitting device 1 can be easily performed.

[0210] <Second Embodiment>

[0211] The light-emitting device 2 of the second embodiment will be described. Figure 1 , Figure 2 , Figures 6 to 15B is a drawing for illustrating an exemplary aspect of the light-emitting device 2. Figure 1It is a perspective view of the light-emitting device 2. Figure 2 It is a side view of the light-emitting device 2. Figure 14A It is a top view for explaining the first example of the internal structure of the light-emitting device 2. Figure 14B It is a top view of a state in which the first semiconductor laser element 20A and the first protection element 50A are placed on the first base 30A. Figure 14C It is Figure 14B and Figure 15B It is a side view of a state in which the semiconductor laser element 20 and the protection element 50 shown in Figure 15A are placed on the base 30. Figure 15B It is a top view of a state in which the second semiconductor laser element 20B and the second protection element 50B are placed on the second base 30B. Figure 6 It is a top view of the base 30. Figure 7A It is a top view of a state in which the first semiconductor laser element 20A and the first protection element 50A in the internal structure of the second example are placed on the first base 30A. Figure 7B It is a top view of a state in which the second semiconductor laser element 20B and the second protection element 50B in the internal structure of the first example are placed on the second base 30B. Figure 8 It is Figure 7A and Figure 7B It is a side view of a state in which the semiconductor laser element 20 and the protection element 50 shown in Figure 9 are placed on the base 30. Figure 10 It is Figure 9 The sectional view of the package 10 in the X-X sectional line of Figure 11 It is a top view of the base body 11. Figure 12 It is a bottom view of the base body 11. Figure 13 It is Figure 11 The sectional view of the base body 11 in the XIII-XIII sectional line of

[0212] In the description of the light-emitting device 1 and the main parts of each structure in the above first embodiment, all the contents except for the contents conflicting with the Figure 1 , Figure 2 , Figures 6 to 15B in the drawings of are also applicable to the description of the light-emitting device 2. To avoid repetition, the non-conflicting contents will not be repeated here.

[0213] (Light-emitting device 2)

[0214] In the light-emitting device 2, the protection element 50 placed on one of the first base 30A and the second base 30B is placed on the first side surface 21C1 side of the semiconductor laser element 20, and the protection element 50 placed on the other base 30 is placed on the light-emitting surface 22 side of the semiconductor laser element 20.

[0215] In Figure 14A the example of, the first protection element 50A placed on the first base 30A is placed on the light-emitting surface 22 side of the first semiconductor laser element 20A, and the second protection element 50B placed on the second base 30B is placed on the first side surface 21C1 side of the second semiconductor laser element 20B. In Figure 15A the example of, the first protection element 50A placed on the first base 30A is placed on the first side surface 21C1 side of the first semiconductor laser element 20A, and the second protection element 50B placed on the second base 30B is placed on the light-emitting surface 22 side of the second semiconductor laser element 20B.

[0216] In Figure 14A the example of, in a plan view, one or each of the first protection elements 50A is arranged between a first imaginary line L1 and a second imaginary line L2, the first imaginary line L1 passes through the light-emitting surface 22 of the first semiconductor laser element 20A and is parallel, and the second imaginary line L2 passes through the first side surface 21C1 of the first semiconductor laser element 20A and is parallel.

[0217] In Figure 14A the example of, one or each of the first protection elements 50A is arranged on the upper surface 31A of the first base 30A near the side surface 31C of the first base 30A facing the same direction as the light-emitting surface 22 and near the side surface 31C of the first base 30A facing the same direction as the third side surface 21C3.

[0218] In Figure 15A the example of, one or each of the second protection elements 50B is arranged on the upper surface 31A of the second base 30B near the side surface 31C of the second base 30B facing the same direction as the light-emitting surface 22 and near the side surface 31C of the second base 30B facing the same direction as the third side surface 21C3.

[0219] In Figure 14A the example of, with respect to a plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A placed on the first base 30A and the first protection element 50A is the same as the distance between the second semiconductor laser element 20B placed on the second base 30B and the second protection element 50B.

[0220] In addition to the first base 30A and the second base 30B that are adjacently arranged, a plurality of bases 30 are arranged at equal intervals in the first direction. The distance between the adjacently arranged first base 30A and second base 30B is greater than the distance between the first bases 30A that are adjacently arranged to each other. The distance between the adjacently arranged first base 30A and second base 30B is greater than the distance between the second bases 30B that are adjacently arranged to each other.

[0221] In each of the first bases 30A, the midpoint MP1 of the first base 30A is away from the midpoint MP2 in the first direction. In each of the second bases 30B, the midpoint MP1 of the second base 30B is away from the midpoint MP2 in the direction opposite to the first direction. In Figure 14A the example of, the first direction is the same direction as the negative direction of X. In Figure 15A the example of, the first direction is the same direction as the positive direction of X.

[0222] In each of the first semiconductor laser elements 20A, the midpoint MP4 of the first semiconductor laser element 20A is away from the midpoint MP5 of the first base 30A on which the first semiconductor laser element 20A is placed in the first direction. In each of the second semiconductor laser elements 20B, the midpoint MP4 of the second semiconductor laser element 20B is away from the midpoint MP5 of the second base 30B on which the second semiconductor laser element 20B is placed in the direction opposite to the first direction. In Figure 14A the example of, the first direction is the same direction as the negative direction of X. In Figure 15A the example of, the first direction is the same direction as the positive direction of X.

[0223] When viewed from above, in the first direction, the distance from the base 30 at the position closest to the first side surface 11H1 among the plurality of bases 30 to the first side surface 11H1 is the same as the distance from the base 30 at the position closest to the second side surface 11H2 among the plurality of bases 30 to the second side surface 11H2. By arranging the bases 30 in this way, a plurality of semiconductor laser elements 20 can be arranged in a manner that is centrosymmetric about the center in the first direction in the internal space of the package 10.

[0224] <Third Embodiment>

[0225] The light-emitting module 901 of the third embodiment will be described. Figures 1 to 3 , Figures 6 to 13 and Figures 16 to 19 are the drawings for illustrating an exemplary manner of the light-emitting module 901. Figure 16 is a perspective view of the light-emitting module 901. Figure 1 is a perspective view of the first light-emitting device 1A and the second light-emitting device 1B. Figure 2 is a side view of the first light-emitting device 1A and the second light-emitting device 1B.Figure 3 Is Figure 1 A sectional view of the first light-emitting device 1A and the second light-emitting device 1B in the III-III sectional line of Figure 17A Is a top view for explaining the internal structure of the first light-emitting device 1A. Figure 17B Is from Figure 17A A top view of the state where the wiring 60 is removed. Figure 17C Is a top view for explaining the internal structure of the second light-emitting device 1B. Figure 17D Is from Figure 17C A top view of the state where the wiring 60 is removed. Figure 6 Is a top view of the base 30. Figure 7A Is a top view of the state where the first semiconductor laser element 20A and the first protection element 50A are placed on the first base 30A. Figure 7B Is a top view of the state where the second semiconductor laser element 20B and the second protection element 50B are placed on the second base 30B. Figure 8 Is a side view of the state where the semiconductor laser element 20 and the protection element 50 are placed on the base 30. Figure 9 Is a perspective view of the package 10. Figure 10 Is Figure 9 A sectional view of the package 10 in the X-X sectional line of Figure 11 Is a top view of the base body 11. Figure 12 Is a bottom view of the base body 11. Figure 13 Is Figure 11 A sectional view of the base body 11 in the XIII-XIII sectional line of Figure 18 Is a top view of the wiring board 101. It should be noted that in Figure 18 , the first connection area 101R1 and the second connection area 101R2 are respectively marked as sectional lines. Figure 19 Is a top view for explaining the internal structure of the first light-emitting device 1A and the second light-emitting device 1B in the light-emitting module 901.

[0226] The light-emitting module 901 includes a plurality of main structural parts. The plurality of main structural parts included in the light-emitting module 901 are: the first light-emitting device 1A, the second light-emitting device 1B, the wiring board 101, the connector 201, and the thermistor 301.

[0227] It should be noted that the light-emitting module 901 may also include other main structural parts. For example, the light-emitting module 901 may also include a light-emitting device different from the first light-emitting device 1A and the second light-emitting device 1B. In addition, the light-emitting module 901 may not have some of the plurality of main structural parts listed here.

[0228] In the description of the light-emitting device 1 and the main parts of each structure in the above-described first embodiment, all the content except for the content conflicting with the drawings of Figures 1 to 3 , Figures 6 to 13 , and Figures 16 to 19 also applies to the description of the first light-emitting device 1A and the second light-emitting device 1B. To avoid repetition, the non-conflicting content will not be described again here. Figures 1 to 3 , Figures 6 to 13 and Figures 16 to 19 All the content except for the content conflicting with the drawings of Figures 1 to 3 , Figures 6 to 13 , and Figures 16 to 19 also applies to the description of the first light-emitting device 1A and the second light-emitting device 1B. To avoid repetition, the non-conflicting content will not be described again here.

[0229] (First light-emitting device 1A and second light-emitting device 1B)

[0230] Each of the first light-emitting device 1A and the second light-emitting device 1B includes a plurality of main structural parts. The plurality of main structural parts included in each light-emitting device include: a package 10, one or more semiconductor laser elements 20, one or more bases 30, one or more reflection members 40, one or more protection elements 50, a plurality of wirings 60, and an optical component 70.

[0231] The plurality of semiconductor laser elements 20 included in the first light-emitting device 1A include a plurality of first semiconductor laser elements 20A. The plurality of semiconductor laser elements 20 included in the second light-emitting device 1B include a plurality of second semiconductor laser elements 20B. The first light-emitting device 1A includes a plurality of first bases 30A, and the second light-emitting device 1B includes a plurality of second bases 30B. In addition, the first light-emitting device 1A includes a plurality of first protection elements 50A, and the second light-emitting device 1B includes a plurality of second protection elements.

[0232] The plurality of semiconductor laser elements 20 included in the first light-emitting device 1A are composed of a plurality of first semiconductor laser elements 20A. Therefore, the first light-emitting device 1A does not include the second semiconductor laser element 20B. In addition, the plurality of semiconductor laser elements 20 included in the second light-emitting device 1B are composed of a plurality of second semiconductor laser elements 20B. The second light-emitting device 1B does not include the first semiconductor laser element 20A. It should be noted that the first light-emitting device 1A may also include the second semiconductor laser element 20B. In addition, the second light-emitting device 1B may also include the first semiconductor laser element 20A.

[0233] The first light-emitting device 1A and the second light-emitting device 1B have packages 10 with the same outer shape. The first light-emitting device 1A and the second light-emitting device 1B have substrates 11 with the same outer shape.

[0234] The number of the first semiconductor laser elements 20A included in the first light-emitting device 1A is the same as the number of the second semiconductor laser elements 20B included in the second light-emitting device 1B. By sharing the bases 30 with the same shape for the packages 10 with the same outer shape, it is possible to easily mount the same number of semiconductor laser elements 20 on the first light-emitting device 1A and the second light-emitting device 1B.

[0235] (Wiring substrate 101)

[0236] The wiring substrate 101 has an upper surface 101A, a lower surface 101B, and one or more side surfaces 101C. The wiring substrate 101 has a plate-like shape. When viewed from above, the outer edge shape of the wiring substrate 101 is rectangular. This rectangle can be a rectangle having a long side and a short side. In the illustrated package 10, the width direction of this rectangle is the same direction as the X direction, and the long side direction is the same direction as the Y direction.

[0237] The wiring substrate 101 has a heat dissipation portion 101D, an electrode portion 101E, and an insulating portion 101F. The heat dissipation portion 101D functions as a heat dissipation path for heat emitted from other main structural parts mounted on the wiring substrate 101. The electrode portion 101E is electrically connected to other main structural parts mounted on the wiring substrate 101.

[0238] The insulating portion 101F insulates the heat dissipation portion 101D and the electrode portion 101E. The insulating portion 101F is provided to insulate the electrical connection between the heat dissipation portion 101D and the electrode portion 101E in the wiring substrate 101.

[0239] The wiring substrate 101 is provided with one or more through holes 101H. The one or more through holes 101H include through holes 101H for fixing the wiring substrate 101 to other components (main structural parts). For example, a screw is inserted into the through hole 101H to fix the wiring substrate 101 to other components. The one or more through holes 101H include through holes 101H for determining the position when the wiring substrate 101 is fixed to other components.

[0240] The heat dissipation portion 101D may use a metal material as the main material. For example, elemental metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, PD, Mo, Cr, W, or alloys containing these metals can be used as the main material of the heat dissipation portion 101D. Preferably, the heat dissipation portion 101D is formed of a material having excellent heat dissipation properties. The heat dissipation portion 101D can be formed by containing 95 mass% or more of copper.

[0241] The electrode portion 101E may use a metal material as the main material. For example, elemental metals such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, PD, Mo, Cr, W, or alloys containing these metals can be used as the main material of the electrode portion 101E.

[0242] The insulating portion 101F is formed of an insulating material. For example, the insulating portion 101F may use polyimide as the main material. Additionally, for example, the insulating portion 101F may use materials such as glass epoxy and liquid crystal polymer obtained by impregnating one or more sheets of glass cloth with a thermosetting insulating resin such as epoxy resin and curing the thermosetting insulating resin as the main material.

[0243] (Connector 201)

[0244] The connector 201 has an insertion port for inserting a connector cable.

[0245] (Thermistor 301)

[0246] The thermistor 301 can be used as an element for measuring temperature.

[0247] (Light-emitting module 901)

[0248] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are mounted on the wiring substrate 101. The wiring substrate 101 can be an example of a mounting substrate on which the first light-emitting device 1A and the second light-emitting device 1B are mounted.

[0249] The first light-emitting device 1A and the second light-emitting device 1B are respectively arranged on the upper surface 101A. The first light-emitting device 1A and the second light-emitting device 1B are respectively joined to the electrode portion 101E via a conductive bonding material. Thus, the first light-emitting device 1A and the second light-emitting device 1B are electrically connected to the wiring substrate 101.

[0250] The wiring substrate 101 has a first connection region 101R1 and a second connection region 101R2 that respectively include the electrode portion 101E. The electrode portion 101E included in the first connection region 101R1 does not overlap with the electrode portion 101E included in the second connection region 101R2.

[0251] When viewed from above, the first connection region 101R1 and the second connection region 101R2 have the same shape. Any of the regions is rectangular when viewed from above.

[0252] Either the first light-emitting device 1A or the second light-emitting device 1B is arranged in the first connection region 101R1. Either the first light-emitting device 1A or the second light-emitting device 1B is arranged in the second connection region 101R2. The first light-emitting device 1A can be respectively arranged in the first connection region 101R1 and the second connection region 101R2. Additionally, the above-mentioned light-emitting device 1 and light-emitting device 2 can also be arranged in the first connection region 101R1 and the second connection region 101R2. In the illustrated light-emitting module 901, the first connection region 101R1 is arranged with the first light-emitting device 1A, and the second connection region 101R2 is arranged with the second light-emitting device 1B.

[0253] The first connection region 101R1 can be defined as the smallest rectangular region in the electrode portion 101E divided by the insulating portion 101F in a plan view, which includes the electrode portion 101E that is joined to the light-emitting device disposed in the first connection region 101R1. The second connection region 101R2 can be defined as the smallest rectangular region in the electrode portion 101E divided by the insulating portion 101F in a plan view, which includes the electrode portion 101E that is joined to the light-emitting device disposed in the second connection region 101R2. As Figure 18 shown, the regions of the two hatched lines show the first connection region 101R1 and the second connection region 101R2 according to this definition.

[0254] The first connection region 101R1 can also be defined as the smallest rectangular region including the region joined to the light-emitting device disposed in the first connection region 101R1, and the second connection region 101R2 can also be defined as the smallest rectangular region including the region joined to the light-emitting device disposed in the second connection region 101R2.

[0255] In the wiring substrate 101, the first connection region 101R1 and the second connection region 101R2 are arranged. The first connection region 101R1 and the second connection region 101R2 having the same shape are arranged and disposed in the same direction with the same orientation.

[0256] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are respectively disposed on the wiring substrate 101 such that the first direction is perpendicular to the direction in which the first connection region 101R1 and the second connection region 101R2 are arranged.

[0257] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B have different orientations by 180 degrees in a plan view. In the first light-emitting device 1A, the first light-emitting device 1A is disposed such that the reflection member 40 is closer to the second light-emitting device 1B than the first semiconductor laser element 20A. In the second light-emitting device 1B, the second light-emitting device 1B is disposed such that the reflection member 40 is closer to the first light-emitting device 1A than the second semiconductor laser element 20B.

[0258] Since the plurality of irradiation points P1 or the plurality of optical axes OA are symmetrically disposed with respect to the imaginary straight line SL3, even when the first light-emitting device 1A and the second light-emitting device 1B are disposed in orientations different by 180 degrees from each other, the respective partial lights can be arranged and emitted. In other words, in either the case where the first light-emitting device 1A and the second light-emitting device 1B are disposed and mounted in the same orientation or the case where they are disposed and mounted opposite to each other, the emission positions of the light in the X direction can be aligned, and thus the shift of the light emission position can be reduced.

[0259] Thus, in a manner of mounting a plurality of light-emitting devices on a mounting substrate in a light-emitting module, even if one light-emitting device includes two semiconductor laser elements having different lengths in the resonator length direction, or even if each light-emitting device includes semiconductor laser elements having different lengths in the resonator direction from each other, the same-designed pedestal can be shared.

[0260] In addition, the advantage of sharing such a pedestal is not limited to the manner of the light-emitting module, and can be enjoyed by any implementer who manufactures or transfers a plurality of light-emitting devices including a first light-emitting device 1A and a second light-emitting device 1B. At this time, the first light-emitting device 1A and the second light-emitting device 1B can be transferred to the same demander, or can be transferred to different demanders. In addition, the plurality of light-emitting devices manufactured or transferred by the implementer includes the light-emitting device 1 and the light-emitting device 2, or can include the light-emitting device 1 and the first light-emitting device 1A, or can include the light-emitting device 1 and the second light-emitting device 1B, or can include the light-emitting device 2 and the first light-emitting device 1A, or can include the light-emitting device 2 and the second light-emitting device 1B.

[0261] As described above, each embodiment of the present invention has been described, but the light-emitting device and the light-emitting module of the present invention are not strictly limited to the light-emitting device or the light-emitting module of each embodiment. In other words, the present invention can be implemented not only by being limited to the appearance and structure of the light-emitting device or the light-emitting module disclosed in each embodiment. The present invention does not necessarily have to include all the main structural parts. For example, in the patent claims, when a part of the main structural parts of the light-emitting device or the light-emitting module disclosed in the embodiment is not described, a person skilled in the art is allowed to make substitutions, omissions, shape deformations, material changes, etc. for a part of the main structural parts, and on this basis, the invention described in the patent claims is specified.

[0262] Industrial Applicability

[0263] The light-emitting device and the light-emitting module according to the embodiment can be used in a projector. In other words, the projector can be one utilization mode to which the present invention is applicable. It should be noted that the present invention is not limited thereto, and can also be used in various utilization modes such as lighting, exposure, vehicle headlights, head-mounted displays, backlights for other displays, etc.

[0264] Explanation of Reference Numerals

[0265] 1, 2 Light-emitting devices

[0266] 1A First light-emitting device

[0267] 1B Second light-emitting device

[0268] 10 Package

[0269] 11 Substrate

[0270] 11A First upper surface

[0271] 11B Lower surface

[0272] 11C Second upper surface

[0273] 11D Outer side surface

[0274] 11E Inner side surface

[0275] 11E1 First inner side surface

[0276] 11E2 Second inner side surface

[0277] 11F Step portion

[0278] 11F1 First step portion

[0279] 11F2 Second step portion

[0280] 11G Upper surface

[0281] 11H Side surface

[0282] 11H1 First side surface

[0283] 11H2 Second side surface

[0284] 11M Base portion

[0285] 11N Frame portion

[0286] 12A Wiring portion

[0287] 12A1 First wiring portion

[0288] 12A2 Second wiring portion

[0289] 13A Bonding pattern

[0290] 14 Cover body

[0291] 14A Upper surface

[0292] 14B Lower surface

[0293] 14C Side surface

[0294] 20 Semiconductor laser element

[0295] 20A First semiconductor laser element

[0296] 20B Second semiconductor laser element

[0297] 21A Upper surface

[0298] Lower surface of 21B

[0299] Side surface of 21C

[0300] First side surface of 21C1

[0301] Second side surface of 21C2

[0302] Third side surface of 21C3

[0303] Light emitting surface of 22

[0304] Base of 30

[0305] First base of 30A

[0306] Second base of 30B

[0307] Upper surface of 31A

[0308] Lower surface of 31B

[0309] Side surface of 31C

[0310] Substrate of 32A

[0311] Upper side metal component of 32B

[0312] Lower side metal component of 32C

[0313] Wiring layer of 33

[0314] First area of 33A

[0315] Second area of 33B

[0316] Reflection component of 40

[0317] Lower surface of 41A

[0318] Light reflecting surface of 41B

[0319] Protection element of 50

[0320] First protection element of 50A

[0321] Second protection element of 50B

[0322] Upper surface of 51A

[0323] Lower surface of 51B

[0324] Side surface of 51C

[0325] Wiring of 60

[0326] Optical component (lens component) of 70

[0327] Upper surface of 71A

[0328] Lower surface of 71B

[0329] Side surface of 71C

[0330] Lens surface (optical action surface) of 71D

[0331] Lens part of 72A

[0332] Non - lens part of 72B

[0333] Wiring substrate 101

[0334] Upper surface of 101A

[0335] Lower surface of 101B

[0336] Side surface of 101C

[0337] Heat dissipation part of 101D

[0338] Electrode part of 101E

[0339] Insulation part of 101F

[0340] Through - hole of 101H

[0341] First connection area of 101R1

[0342] Second connection area of 101R2

[0343] Connector 201

[0344] Thermistor 301

[0345] Light - emitting module 901

Claims

1. A light emitting device, characterized in that: have: A plurality of semiconductor laser elements, each of which has a light emitting surface and a first side surface which is a surface opposite to the light emitting surface; A plurality of protection elements, including a first protection element and a second protection element; A plurality of bases, each of which has a wiring layer and a mounting surface on which the wiring layer is provided, wherein the wiring layer has a first region on which the semiconductor laser element is mounted and a second region on which the protection element is mounted; The plurality of semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element having a length in a resonator direction greater than that of the first semiconductor laser element. The plurality of bases include a first base on which the first semiconductor laser element and the first protection element are mounted, and a second base on which the second semiconductor laser element and the second protection element are mounted. In a plan view, the first protection element is not arranged between a first imaginary straight line and a second imaginary straight line, the first imaginary straight line passes through and is parallel to the light emitting surface of the first semiconductor laser element, and the second imaginary straight line passes through and is parallel to the first side surface of the first semiconductor laser element. In a plan view, a part or all of the second protection element is arranged between a third imaginary straight line and a fourth imaginary straight line, the third imaginary straight line passes through and is parallel to the light emitting surface of the second semiconductor laser element, and the fourth imaginary straight line passes through and is parallel to the first side surface of the second semiconductor laser element. In a plan view, in a direction parallel to the light emitting surface of the first semiconductor laser element, a midpoint of a width of the light emitting surface of the first semiconductor laser element does not coincide with a midpoint of a width of the first base. In a plan view, a midpoint of a width of the light emitting surface of the second semiconductor laser element and a midpoint of a width of the second mount do not coincide with each other in a direction parallel to the light emitting surface of the second semiconductor laser element.

2. The light emitting device according to claim 1, characterized in that: The second protection element is disposed at a position where the fourth imaginary straight line passes in a plan view.

3. The light emitting device according to claim 1 or 2, characterized in that: In a plan view, the width of the first base in the cavity direction is larger than the sum of the widths of the first semiconductor laser element and the first protective element. In a plan view, the width of the second pedestal in the cavity direction is smaller than the sum of the widths of the second semiconductor laser element and the second protection element.

4. The light emitting device according to any one of claims 1 to 3, characterized in that: In a plan view, in a direction parallel to the light emitting surface of the first semiconductor laser element, a midpoint of a width of the light emitting surface of the first semiconductor laser element and a midpoint of a width of the first base are separated in a range of 10 μm to 200 μm. In a plan view, in a direction parallel to the light emitting surface of the second semiconductor laser element, a midpoint of the width of the light emitting surface of the second semiconductor laser element and a midpoint of the width of the second pedestal are separated by a range of 10 μm to 200 μm.

5. The light emitting device according to any one of claims 1 to 4, characterized in that: The semiconductor laser elements are mounted on the plurality of bases, respectively. The plurality of susceptors are arranged in parallel such that a distance between adjacent susceptors is 300 μm or less.

6. The light emitting device according to any one of claims 1 to 5, characterized in that: The invention further comprises a base having a first upper surface, a second upper surface above the first upper surface, and a plurality of inner side surfaces between the first upper surface and the second upper surface. The plurality of bases are arranged in parallel along a first direction above the first upper surface. The plurality of inner side surfaces include a first inner side surface and a second inner side surface which are opposite to each other in a first direction, When viewed from above, in the first direction, the distance from the base closest to the first inner side surface among the multiple bases to the first inner side surface is different from the distance from the base closest to the second inner side surface among the multiple bases to the second inner side surface.

7. The light emitting device according to any one of claims 1 to 6, characterized in that: Also available: one or more reflecting members that reflect light emitted from the plurality of semiconductor laser elements; a substrate having a first upper surface on which the plurality of bases and the one or more reflective components are arranged; The plurality of bases are arranged in parallel along a first direction above the first upper surface, When viewed from above, with respect to the first direction, the distance from the midpoint of the two ends of the substrate in the first direction to the midpoint of the two ends of the one or more reflective components in the first direction is smaller than the distance from the midpoint of the two ends of the substrate in the first direction to the midpoint of the two ends of the multiple bases in the first direction.

8. The light emitting device according to claim 7, characterized in that: The light emitted from the plurality of semiconductor laser elements is respectively composed of a plurality of partial lights, that is, the light emitted from the semiconductor laser elements. When viewed from above, the multiple points formed by the points where the light traveling along the optical axis of each of the multiple partial lights illuminates the one or more reflecting components are arranged symmetrically with respect to the first direction relative to an imaginary straight line passing through the midpoints of the two ends of the substrate in the first direction and perpendicular to the first direction.

9. A light emitting module, characterized in that: have: a first light emitting device; a second light emitting device; a mounting substrate for mounting the first light emitting device and the second light emitting device; The first light emitting device comprises: A plurality of first semiconductor laser elements each having a light emitting surface and a first side surface which is a surface opposite to the light emitting surface; a plurality of first protection elements; A plurality of first bases, each of which has a first wiring layer and a first mounting surface on which the first wiring layer is provided, wherein the first wiring layer has a first region on which the first semiconductor laser element is mounted and a second region on which the first protection element is mounted; The second light emitting device comprises: A plurality of second semiconductor laser elements, each of which has a light emitting surface and a second side surface which is a surface opposite to the light emitting surface; a plurality of second protection elements; a plurality of second bases, each of which has a second wiring layer and a second mounting surface for the second wiring layer, wherein the second wiring layer has a first region for mounting the second semiconductor laser element and a second region for mounting the second protection element, The shape of the first wiring layer viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer viewed from a direction perpendicular to the second mounting surface. In a plan view, the first protection element is not arranged between a first imaginary straight line and a second imaginary straight line, the first imaginary straight line passes through and is parallel to the light emitting surface of the first semiconductor laser element, and the second imaginary straight line passes through and is parallel to the first side surface of the first semiconductor laser element, In a plan view, a part or the whole of the second protection element is arranged between a third imaginary straight line and a fourth imaginary straight line, the third imaginary straight line passes through and is parallel to the light emitting surface of the second semiconductor laser element, and the fourth imaginary straight line passes through and is parallel to the first side surface of the second semiconductor laser element. In a plan view, a midpoint of a width of the light emitting surface of the first semiconductor laser element does not coincide with a midpoint of a width of the first base in a direction parallel to the light emitting surface of the first semiconductor laser element. In a plan view, a midpoint of a width of the light emitting surface of the second semiconductor laser element does not coincide with a midpoint of a width of the second mount in a direction parallel to the light emitting surface of the second semiconductor laser element.

10. The light emitting module according to claim 9, characterized in that: In a plan view, with respect to a direction parallel to the light emitting surface of the first semiconductor laser element, a midpoint of a width of the light emitting surface of the first semiconductor laser element and a midpoint of a width of the first base are separated in a range of 10 μm to 200 μm. In a plan view, in a direction parallel to the light emitting surface of the second semiconductor laser element, a midpoint of the width of the light emitting surface of the second semiconductor laser element and a midpoint of the width of the second pedestal are separated by a range of 10 μm to 200 μm.

11. The light emitting module according to claim 9 or 10, characterized in that: The plurality of first pedestals are arranged in parallel so that the interval between adjacent first pedestals is 300 μm or less. The plurality of second susceptors are arranged in parallel such that a distance between adjacent second susceptors is 300 μm or less.

12. A plurality of light emitting devices, characterized in that: comprising a first light emitting device and a second light emitting device, The first light emitting device comprises: A plurality of first semiconductor laser elements, each of which has a light emitting surface and a first side surface opposite to the light emitting surface; a plurality of first protection elements; a plurality of first bases each having a first wiring layer and a first mounting surface, wherein the first wiring layer has a first region for mounting the first semiconductor laser element and a second region for mounting the first protection element, and the first mounting surface is provided with the first wiring layer, The second light emitting device comprises: A plurality of second semiconductor laser elements, each of which has a light emitting surface and a second side surface which is a surface opposite to the light emitting surface; a plurality of second protection elements; a plurality of second bases, each of which has a second wiring layer and a second mounting surface on which the second wiring layer is provided, wherein the second wiring layer has a first region on which the second semiconductor laser element is mounted and a second region on which the second protection element is mounted, The shape of the first wiring layer viewed from a direction perpendicular to the first mounting surface is the same as the shape of the second wiring layer viewed from a direction perpendicular to the second mounting surface. In a plan view, the first protection element is not arranged between a first imaginary straight line and a second imaginary straight line, the first imaginary straight line passes through and is parallel to the light emitting surface of the first semiconductor laser element, and the second imaginary straight line passes through and is parallel to the first side surface of the first semiconductor laser element, In a plan view, a part or the whole of the second protection element is arranged between a third imaginary straight line and a fourth imaginary straight line, the third imaginary straight line passes through and is parallel to the light emitting surface of the second semiconductor laser element, and the fourth imaginary straight line passes through and is parallel to the first side surface of the second semiconductor laser element. In a plan view, a midpoint of a width of the light emitting surface of the first semiconductor laser element does not coincide with a midpoint of a width of the first base in a direction parallel to the light emitting surface of the first semiconductor laser element. In a plan view, a midpoint of a width of the light emitting surface of the second semiconductor laser element does not coincide with a midpoint of a width of the second mount in a direction parallel to the light emitting surface of the second semiconductor laser element.

13. The plurality of light emitting devices according to claim 12, wherein: In a plan view, with respect to a direction parallel to the light emitting surface of the first semiconductor laser element, a midpoint of a width of the light emitting surface of the first semiconductor laser element and a midpoint of a width of the first base are separated in a range of 10 μm to 200 μm. In a plan view, in a direction parallel to the light emitting surface of the second semiconductor laser element, a midpoint of the width of the light emitting surface of the second semiconductor laser element and a midpoint of the width of the second pedestal are separated by a range of 10 μm to 200 μm.

14. The plurality of light emitting devices according to claim 12 or 13, characterized in that: The plurality of first pedestals are arranged in parallel so that the interval between adjacent first pedestals is 300 μm or less. The plurality of second susceptors are arranged in parallel such that a distance between adjacent second susceptors is 300 μm or less.

15. The plurality of light emitting devices according to any one of claims 12 to 14, characterized in that: The first light-emitting device and the second light-emitting device can be transferred to the same demander or different demanders.

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