Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, and relates to the technical field of display. The photoelectric device comprises a first electrode, a first carrier function layer, a first interface modification layer, an active layer and a second electrode which are sequentially stacked. Wherein the first interface modification layer comprises a first sub-layer and a second sub-layer, and the first sub-layer is arranged between the second sub-layer and the active layer; the material of the first sub-layer comprises a first metal compound, and the material of the second sub-layer comprises a second metal compound and a metal oxide. The photoelectric device provided by the invention is high in photoelectric efficiency.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to an optoelectronic device, a preparation method thereof, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to their excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display, OLEDs have become the mainstream technology in the field of display technologies. QLEDs have the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, they have become strong competitors of OLEDs.

[0003] The structures of traditional OLED and QLED devices generally include an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode. In the prior art, inorganic particles are often used as the materials of the carrier functional layer, and metal ions are usually doped in the inorganic particles to regulate the carrier mobility and its energy level relationship with the active layer. The existing carrier functional layer has poor interfacial contact performance with the electrode and the light-emitting layer.

[0004] Therefore, the optoelectronic efficiency of optoelectronic devices is relatively low and needs to be further improved. Summary of the Invention

[0005] In view of this, the present application provides an optoelectronic device, a preparation method thereof, and a display device.

[0006] An optoelectronic device according to an embodiment of the present application includes a first electrode, a first carrier functional layer, a first interface modification layer, an active layer, and a second electrode that are sequentially stacked.

[0007] Wherein, the first interface modification layer includes a first sub-layer and a second sub-layer, and the first sub-layer is disposed between the second sub-layer and the active layer; the material of the first sub-layer includes a first metal compound, and the material of the second sub-layer includes a second metal compound and a metal oxide.

[0008] Correspondingly, an embodiment of the present application further provides a preparation method for an optoelectronic device, including:

[0009] Providing a preform of an optoelectronic device, including a second electrode and an active layer that are sequentially stacked;

[0010] Providing a first metal compound, and disposing the first metal compound on the active layer to form a prefabricated first interface modification layer;

[0011] The prefabricated first interface modification layer is subjected to an oxidation treatment to form a first interface modification layer. The first interface modification layer includes a first sublayer and a second sublayer. The first sublayer is disposed between the active layer and the second sublayer. The material of the first sublayer includes a first metal compound, and the material of the second sublayer includes a second metal compound and a metal oxide;

[0012] A first carrier function layer and a first electrode are formed on the first interface modification layer to obtain an optoelectronic device.

[0013] Correspondingly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device.

[0014] The optoelectronic device provided by the present application has high optoelectronic efficiency. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0016] Figure 1 is a schematic structural diagram of the optoelectronic device provided by the embodiment of the present application;

[0017] Figure 2 is a schematic structural diagram of another optoelectronic device provided by the embodiment of the present application;

[0018] Figure 3 is a schematic structural diagram of another optoelectronic device provided by the embodiment of the present application;

[0019] Figure 4 is a flowchart of the preparation method of the optoelectronic device provided by the embodiment of the present application;

[0020] Figure 5 is a current density-voltage curve diagram of Embodiment 1, Embodiments 7-8 and Comparative Examples 1-2 of the present application;

[0021] Figure 6 is a current efficiency-luminance curve diagram of Embodiment 1, Embodiments 7-8 and Comparative Examples 1-2 of the present application.

[0022] Reference Signs:

[0023] First electrode 10; First carrier function layer 20; First interface modification layer 30; First sublayer 31; Second sublayer 32; Active layer 40; Second electrode 50; Second interface modification layer 60; Second carrier function layer 70. Detailed Embodiments

[0024] In the following, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part rather than all of the embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments in the present application without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application and are not used to limit the present application.

[0025] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0026] In the present application, "and / or" describes the association relationship of associated objects and indicates that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B may be singular or plural.

[0027] In the present application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one (item)" or similar expressions below refer to any combination of these items, including any combination of single item (item) or plural items (items). For example, "at least one (item) of a, b, or c", or, "at least one (item) of a, b, and c" can both represent: a, b, c, a - b (that is, a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0028] The various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present application; therefore, it should be considered that the range description has specifically disclosed all possible sub - ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within that range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. In addition, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0029] Currently, the solution method is often used to prepare inorganic particles doped with metal ions. However, the content of metal ions doped by the solution method is usually limited, the synthesis process is complex, and it is easy to cause instability of inorganic particles and generate precipitation. Moreover, in optoelectronic devices, the requirements for the interfaces between the light-emitting layer and the carrier functional layer and between the electrode and the carrier functional interface are often different. At the interface in contact with the electrode, a relatively large number of active functional groups, such as -OH, diffusible O defects, etc., are usually required to undergo an interfacial reaction with the electrode to reduce the interface instability caused by the aging process. At this time, it is necessary to reduce the content of metal ions that passivate defects; while at the interface in contact with the active layer, metal ion doping is required to regulate the energy level matching and the carrier injection ability. The interfacial contact performance between the carrier functional layer and the electrode and the light-emitting layer in existing optoelectronic devices is poor, which affects the optoelectronic efficiency and stability of optoelectronic devices.

[0030] The technical solution of this application is as follows:

[0031] In the first aspect, please refer to Figure 1 , an embodiment of this application provides an optoelectronic device, which includes a first electrode 10, a first carrier functional layer 20, a first interface modification layer 30, an active layer 40, and a second electrode 50 that are sequentially stacked; the material of the first carrier functional layer 20 includes a first carrier functional material, and the material of the active layer 40 includes an active material;

[0032] Among them, the first interface modification layer 30 includes a first sub-layer 31 and a second sub-layer 32, and the first sub-layer 31 is disposed between the second sub-layer 32 and the active layer 40; the material of the first sub-layer 31 includes a first metal compound, and the material of the second sub-layer 32 includes a second metal compound and a metal oxide.

[0033] In the optoelectronic device provided by this application, a first interface modification layer 30 is added between the first carrier functional layer 20 and the active layer 40. The first metal compound in the first sub-layer 31 can reduce the lattice mismatch between the first interface modification layer 30 and the active layer 40, improve the compatibility with the active layer 40, and effectively regulate the carrier migration performance; the metal oxide in the second sub-layer 32 introduces oxygen elements, and the second metal compound can reduce the interface barrier between the first interface modification layer 30 and the first carrier functional layer 20 side, improving the interface stability; the first interface modification layer 30 passivates the interface defects between the first carrier functional layer 20 and the active layer 40, which is beneficial to improving the optoelectronic efficiency and stability of the optoelectronic device and extending the service life of the optoelectronic device.

[0034] In some embodiments, the first metal compound and the second metal compound do not include metal oxides.

[0035] It can be understood that the first metal compound and the second metal compound do not include metal oxides, that is, the first metal compound and the second metal compound do not include oxygen elements, and the first metal compound and the second metal compound are both different from the metal oxides in the second sublayer 32.

[0036] In some embodiments, the first metal compound and the second metal compound are the same. In other words, the metal elements in the first metal compound are the same as the metal elements in the second metal compound, and the non-metal elements in the first metal compound are the same as the non-metal elements in the second metal compound.

[0037] In some embodiments, the metal elements in the first metal compound and the second metal compound are the same as the metal elements in the metal oxide.

[0038] In some embodiments, the material of the first charge carrier functional layer 20 includes a first charge carrier functional material, and the metal elements in the second metal compound are the same as the metal elements in the first charge carrier functional material. In this way, the interface barrier between the first interface modification layer 30 and the first charge carrier functional layer 30 side can be effectively reduced, and the interface stability can be improved.

[0039] In some embodiments, the material of the active layer 40 includes an active material; the non-metal elements in the first metal compound are the same as the non-metal elements in the active material. In this way, the lattice mismatch between the first interface modification layer 30 and the active layer 40 can be effectively reduced, and the compatibility with the active layer 40 can be improved.

[0040] In some embodiments, the metal elements in the first metal compound, the second metal compound, and the metal oxide each independently include a main metal element.

[0041] In other embodiments, the metal elements in the first metal compound, the second metal compound, and the metal oxide each independently include a main metal element and a doped metal element.

[0042] Furthermore, the main metal element includes one or more of Zn, Ni, Ti, Sn, Ta, Zr, Cr, Mo, W, Cu, and V.

[0043] Furthermore, the doped metal element is selected from a first doping element or a second doping element. The first doping element can promote electron injection, and conversely, the second doping element can reduce electron injection. It can be understood that the doped metal element can be selected according to actual needs.

[0044] In some embodiments, the first doping element includes one or more of Al, Ga, In, Ag, W, Mo, Sn, V, and Fe.

[0045] The second doping element includes one or more of Mg, Ca, Cu, Ni, Co, and Zn.

[0046] It should be noted that the main metal element and the doped metal element are different. For example, when the main metal element is copper, the doped metal element is not Cu and can be selected from doped metal elements such as Mg and Ca.

[0047] In some embodiments, the molar ratio of the main metal element to the doped metal element is 1:(0, 0.5], for example, it can be 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5, etc. Within the range of the molar ratio, it is beneficial for the first interface modification layer 30 to effectively regulate the migration performance of carriers.

[0048] It should be noted that the symbol (a, b) represents all real numbers between real number a and real number b, but does not include a and b, which is equivalent to the number set {x|a < x < b}, denoted as (a, b), and the values do not include a and b. The symbol [a, b] represents all real numbers between real number a and real number b, including a and b. It is equivalent to the number set {x|a ≤ x ≤ b}, denoted as [a, b], and the values include a and b. Correspondingly, (0, 0.5] represents the number set {x|0 < x ≤ 0.5}, excluding 0 but including 0.5.

[0049] In some embodiments, the non-metal element in the first metal compound and the second metal compound is one or more of S, Se, Te, N, As, and P.

[0050] Exemplarily, the first metal compound and the second metal compound can be ZnS, Al2Se3, etc.

[0051] In some embodiments, the second sub-layer 32 further includes a complex formed by bonding the second metal compound and the metal oxide. That is, the second metal compound and the metal oxide are bonded to each other. In other words, the material of the second sub-layer can be a mixture of the second metal compound, the metal oxide, and the complex formed by bonding the second metal compound and the metal oxide.

[0052] In some embodiments, the thickness of the first interface modification layer 30 is 0.5 nm to 7 nm, for example, it can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, etc.

[0053] In some embodiments, the first carrier functional material includes first inorganic particles. The first inorganic particles include first N-type inorganic particles or first P-type inorganic particles.

[0054] The first N-type inorganic particles include first doped metal oxide particles or first undoped metal oxide particles. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga.

[0055] The first P-type inorganic particles include second doped metal oxide particles or second undoped metal oxide particles. The metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V.

[0056] It should be noted that when the first N-type inorganic particles include first doped metal oxide particles, the mass ratio of the doping elements in the first doped metal oxide particles is (0, 15%], and can be, for example, 2%, 4%, 6%, 8%, 10%, 12%, 14%, etc.

[0057] Preferably, the metal element in the first undoped metal oxide particles and the first doped metal oxide particles is the same as the main metal element of the first interface modification layer 30, and the doping element in the first doped metal oxide particles is the same as the doped metal element of the first interface modification layer 30.

[0058] Correspondingly, when the first P-type second inorganic particles include second doped metal oxide particles, the mass ratio of the doping elements in the second doped metal oxide particles is (0, 15%], and can be, for example, 2%, 4%, 6%, 8%, 10%, 12%, 14%, etc.

[0059] Preferably, the metal elements in the second non-doped metal oxide particles and the second doped metal oxide particles are the same as the main metal element of the first interface modification layer 30, and the doping element in the second doped metal oxide particles is the same as the doped metal element of the first interface modification layer 30.

[0060] In some embodiments, the average particle size of the first inorganic particles is 2 nm to 20 nm, and can be, for example, 2 nm, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0061] In some embodiments, the active material includes a luminescent material, and the luminescent material includes a quantum dot luminescent material.

[0062] The quantum dot luminescent material can be selected from, but not limited to, one or several of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0063] The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots can be respectively selected from, but not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. The II-VI group compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0064] As an example, the quantum dots of the core-shell structure can be selected from but not limited to one or more of CdZnSe / ZnCdS / ZnS, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, " / " means that the substance after " / " (as the shell layer) coats the substance before " / " (as the core layer).

[0065] The perovskite semiconductor material can be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is BYX3, where B is a Cs + ion, Y is a divalent metal cation selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X is a halogen anion selected from one or more of Cl - , Br - , I - . The general structural formula of the organic-inorganic hybrid perovskite semiconductor is CYX3, where C is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, Y is a divalent metal cation selected from one or more of Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ , and X is a halogen anion selected from one or more of Cl - , Br -, I - One or more of the following.

[0066] It can be understood that the non-metallic element in the quantum dot light-emitting material is the same as the A metal element. In this way, it is beneficial to reduce the interfacial barrier between the first interfacial modification layer 30 and the active layer 40, and the first metal compound can also passivate the defects of the quantum dots near the side of the first interfacial modification layer 30.

[0067] Furthermore, the average particle size of the quantum dots is 8 nm to 20 nm, and can be, for example, 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, etc.

[0068] Please refer to Figure 2 , the optoelectronic device further includes a second interfacial modification layer 60, the second interfacial modification layer 60 is disposed between the first electrode 10 and the first carrier functional layer 20, and the material of the second interfacial modification layer 60 includes second inorganic particles containing hydroxyl ligands.

[0069] The hydroxyl ligands in the second interfacial modification layer 60 can enhance the defects of the second interfacial modification layer 60, promote its reaction with the electrode interface to tightly bond, and improve the anti-aging stability of the interface between the second interfacial modification layer 60 and the first electrode 10.

[0070] In some embodiments, the average particle size of the second inorganic particles is 2 nm to 20 nm, and can be, for example, 2 nm, 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0071] In some embodiments, the second inorganic particles include second N-type inorganic particles or second P-type inorganic particles.

[0072] Furthermore, the second N-type inorganic particles include first non-doped metal oxide particles and IIB-VIA group semiconductor materials, and the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3.

[0073] The second P-type inorganic particles include second non-doped metal oxide particles, and the material in the second non-doped metal oxide particles includes one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5.

[0074] Preferably, the metal element in the second inorganic particles is the same as the metal element in the first carrier functional material.

[0075] In some embodiments, the thickness of the second interface modification layer 60 is 5 nm to 30 nm, and for example, it can be 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, 20 nm, 22 nm, 25 nm, 28 nm, etc.

[0076] In some embodiments, the first electrode 10 and the second electrode 50 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxide includes a metal oxide electrode or a composite electrode in which a metal is sandwiched between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. Herein, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including an AZO layer, an Ag layer, and an AZO layer stacked in sequence.

[0077] In some embodiments, the optoelectronic device includes a light-emitting diode.

[0078] In some embodiments, please refer to Figure 3 , the optoelectronic device further includes a second carrier function layer 70, and the second carrier function layer 70 is disposed between the active layer 40 and the second electrode 50.

[0079] In some embodiments, the first carrier function layer 20 is a hole function layer, and the second carrier function layer 70 is an electron function layer. That is to say, the first electrode 10 is an anode, and the second electrode 50 is a cathode.

[0080] In some other embodiments, the first carrier function layer 20 is an electron function layer, and the second carrier function layer 70 is a hole function layer. That is to say, the second electrode 50 is an anode, and the first electrode 10 is a cathode.

[0081] The hole function layer includes one or more of a hole injection layer and a hole transport layer.

[0082] The electron function layer includes one or more of an electron injection layer and an electron transport layer.

[0083] It can be understood that when the first carrier functional layer 20 is a hole functional layer, the material of the first carrier functional layer 20 is first P-type inorganic particles; when the first carrier functional layer 20 is an electron functional layer, the material of the first carrier functional layer 20 is first N-type inorganic particles.

[0084] In some embodiments, when the second charge carrier functional layer 70 is a hole functional layer, the materials of the second charge carrier functional layer 70 include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green light-emitting materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,One or more of N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, wherein the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V, the metal sulfides include one or more of CuS, MoS3, and WS3, the metal selenides include one or more of MoSe3 and WSe3, and the metal nitrides include p-type gallium nitride.,

[0085] When the second carrier functional layer 70 is an electron functional layer, the material of the second carrier functional layer 70 includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS.

[0086] In a second aspect, please refer to Figure 4 , this application embodiment also provides a method for manufacturing an optoelectronic device, including:

[0087] S11. Provide an optoelectronic device preform, including a second electrode 50 and an active layer 40 stacked in sequence;

[0088] S12. Provide a first metal compound, and dispose the first metal compound on the active layer 40 to form a prefabricated first interface modification layer;

[0089] S13. Perform an oxidation treatment on the prefabricated first interface modification layer to form a first interface modification layer 30. The first interface modification layer 30 includes a first sub-layer 31 and a second sub-layer 32. The first modification layer 31 is disposed between the active layer 40 and the second sub-layer 32. The material of the first sub-layer 31 includes a first metal compound, and the material of the second sub-layer 32 includes a second metal compound and a metal oxide;

[0090] S14. Form a first carrier functional layer 20 and a first electrode 10 on the first interface modification layer 30 to obtain an optoelectronic device.

[0091] It can be understood that the method for preparing an optoelectronic device provided in this application can be used to prepare a normal-type optoelectronic device or an inverted-type optoelectronic device. When preparing a normal-type optoelectronic device, the first carrier functional layer 20 is an electron functional layer; when preparing an inverted-type optoelectronic device, the first carrier functional layer 20 is a hole functional layer.

[0092] In S11:

[0093] In some embodiments, the optoelectronic device preform further includes a second carrier functional layer 70, and the second carrier functional layer 70 is disposed between the active layer 40 and the second electrode 50.

[0094] In S12:

[0095] In some embodiments, the method for forming the prefabricated first interface modification layer includes:

[0096] S121. Provide a first electrolyte solution, which includes a first metal element precursor, a first non-metal element precursor, and a first electrolyte;

[0097] S122. Place the optoelectronic device preform in the first electrolyte solution and perform a first electrochemical deposition to form a prefabricated first interface modification layer.

[0098] In S121:

[0099] In some embodiments, the first metal element precursor includes a main metal precursor and a doped metal precursor.

[0100] Furthermore, the main metal precursor includes one or more of a zinc precursor, a nickel precursor, a titanium precursor, a tin precursor, a tantalum precursor, a zirconium precursor, a chromium precursor, a molybdenum precursor, a tungsten precursor, a copper precursor, and a vanadium precursor.

[0101] Exemplarily, the zinc precursor includes one or more of zinc acetate, zinc sulfate, zinc halide, zinc sulfamate, zinc nitrate, zinc acetate tetrahydrate, zinc carbonate, zinc sulfite, zinc silicate, zinc thiocyanate, zinc cyanide, and zinc phosphate.

[0102] It should be noted that the non-metallic elements in the first metal element precursor do not participate in the reaction, which can reduce the electrode potential of water electrolyzing OH - . When there is a first non-metallic element precursor, it is mainly the non-metallic elements in the first non-metallic element precursor that participate in the reaction to form the first metal compound. In other words, the material of the prefabricated first interface modification layer is the first metal compound.

[0103] In some embodiments, the doped metal precursor includes a first doped metal precursor or a second doped metal precursor.

[0104] Furthermore, the first doped metal precursor includes one or more of an aluminum precursor, a gallium precursor, an indium precursor, a silver precursor, a tungsten precursor, a molybdenum precursor, a tin precursor, a vanadium precursor, and an iron precursor; the second doped metal precursor includes one or more of a magnesium precursor, a calcium precursor, a copper precursor, a nickel precursor, a cobalt precursor, and a zinc precursor.

[0105] In some embodiments, the molar concentration ratio of the main metal in the main metal precursor to the doped metal ion in the doped ion precursor is 1:(0, 0.5], for example, it can be 1:0.1, 1:0.2, 1:0.3, 1:0.4, 1:0.5, etc. Within the range of the molar concentration ratio, it is beneficial to regulate the migration performance of carriers.

[0106] In some embodiments, in the first electrolyte, the molar concentration of the main metal precursor and / or the doped metal precursor is 0.001 mol / L to 0.5 mol / L, for example, it can be 0.01 mol / L, 0.05 mol / L, 0.1 mol / L, 0.2 mol / L, 0.3 mol / L, 0.4 mol / L, etc. Within the range of the molar concentration, it is beneficial for the main metal precursor and / or the doped metal precursor to be fully dispersed and dissolved.

[0107] In some embodiments, the first non-metallic element precursor includes one or more of a sulfur precursor, a selenium precursor, a tellurium precursor, a nitrogen precursor, an arsenic precursor, and a phosphorus precursor.

[0108] Exemplarily, the sulfur precursor includes one or more of thiourea, thiol, thioether, thiosulfate, and sodium sulfide. Among them, the main chain carbon atoms of the thiol and the thioether are less than or equal to 4.

[0109] In some embodiments, the molar concentration of the first non-metallic element precursor is 0.001 mol / L to 1 mol / L, and for example, it can be 0.01 mol / L, 0.05 mol / L, 0.1 mol / L, 0.5 mol / L, 1 mol / L, 5 mol / L, etc. Within the range of the molar concentration, it is beneficial to the dissolution and dispersion of the first non-metallic element precursor.

[0110] In some embodiments, the first electrolyte includes an alcohol-water electrolyte. Further, in the alcohol-water electrolyte, the volume ratio of water to alcohol is (0.001 - 0.5):1, and for example, it can be 0.01:1, 0.05:1, 0.1:1, 0.2:1, 0.3:1, 0.4:1, etc. Within the range of the volume ratio, the solubility of the alcohol-water electrolyte is relatively good.

[0111] In the S122:

[0112] In some embodiments, the first electrochemical deposition includes one or more of cyclic voltammetric deposition, pulse deposition, square wave deposition, potentiostatic deposition, and galvanostatic deposition. It can be understood that the electrochemical deposition can form a prefabricated first interface modification layer at the atomic level, and the prefabricated first interface modification layer can bond with the active layer 40, reduce the ligand barrier, narrow the potential barrier difference between the prefabricated first interface modification layer and the active layer 40, and passivate the defects of the active layer 40.

[0113] In some embodiments, the current density of the first electrochemical deposition is 2 mA / cm 2 ~20 mA / cm 2 For example, it can be 5 mA / cm 2 、8 mA / cm 2 、10 mA / cm 2 、12 mA / cm 2 、15 mA / cm 2 、18 mA / cm 2 etc. The time of the first electrochemical deposition is 3 min to 60 min, and for example, it can be 5 min, 8 min, 10 min, 20 min, 30 min, 40 min, 50 min, etc.

[0114] Thus, under the conditions of the first electrochemical deposition, it is beneficial to efficiently deposit a prefabricated first interface modification layer that is tightly combined with the active layer 40.

[0115] Exemplarily, when the first non-metallic element precursor is thiourea, the chemical reaction formula for depositing the prefabricated first interface modification layer is as follows:

[0116] H2O + e - → OH - + H2

[0117] SC(NH2)2 + OH - → S 2- + OC(NH2)2 + H2O

[0118] M n+ + nS 2- → M2S n

[0119] Among them, M is the metal element in the first metal element precursor.

[0120] In the S13:

[0121] In some embodiments, the oxidation treatment of the prefabricated first interface modification layer includes ozone treatment, oxygen plasma treatment or oxygen ion treatment.

[0122] Furthermore, the gas flow rate of the oxygen plasma treatment is 50 L / h to 400 L / h, and for example, it can be 100 L / h, 150 L / h, 200 L / h, 250 L / h, 300 L / h, 350 L / h, etc.; the plasma energy is 5 eV to 50 eV, and for example, it can be 10 eV, 15 eV, 20 eV, 25 eV, 30 eV, 35 eV, 40 eV, 45 eV, etc.; the treatment time is 1 min to 20 min, and for example, it can be 2 min, 5 min, 8 min, 10 min, 12 min, 15 min, 18 min, etc.

[0123] The oxygen ion treatment includes oxygen ion irradiation, and the energy of the oxygen ion irradiation is 50 eV to 2000 eV, and for example, it can be 100 eV, 200 eV, 500 eV, 800 eV, 1000 eV, 1500 eV, etc.; the treatment time is 1 min to 20 min, and for example, it can be 2 min, 5 min, 8 min, 10 min, 12 min, 15 min, 18 min, etc.

[0124] The ozone treatment includes introducing ozone or placing it in an ozone atmosphere. The gas flow rate of the ozone is 50 L / min to 500 L / min, and for example, it can be 50 L / min, 100 L / min, 200 L / min, 300 L / min, 400 L / min; the treatment time is 1 min to 20 min, and for example, it can be 2 min, 5 min, 8 min, 10 min, 12 min, 15 min, 18 min, etc.

[0125] Thus, under the conditions of the oxidation treatment described above, it is beneficial to oxidize the surface of the prefabricated first interface modification layer to form a second sub-layer 32 containing oxides, so as to reduce the interface barrier with the first carrier functional layer 20.

[0126] Exemplarily, the chemical reaction formula for the oxidation treatment is as follows:

[0127] M2S n +·O → M2S n ·M2O n +SO x

[0128] It should be noted that M2S n ·M2O n includes M2S n and M2O n , and there may be a part of the compound formed by connecting M2S n and M2O n through a linking bond. M2S n ·M2O n is a mixture formed by M2S n and M2O n , M2S n and the complex formed by connecting M2O n through a linking bond.

[0129] It should also be noted that the second metal compound is the same as the first metal compound. In other words, there is a part of the unoxidized first metal compound remaining in the second sublayer 52, which jointly exerts a beneficial effect with the metal oxide.

[0130] In S14:

[0131] In some embodiments, after forming the first carrier functional layer 20 on the first interface modification layer 30, it further includes: forming a second interface modification layer 60 on the first carrier functional layer 20, and forming a first electrode 10 on the second interface modification layer 60 to obtain an optoelectronic device.

[0132] In some embodiments, the method for forming the second interface modification layer 60 includes:

[0133] S141. Provide a second electrolyte, which includes a metal salt and a second electrolyte;

[0134] S142. Place the first carrier functional layer 20 in the second electrolyte and perform a second electrochemical deposition to form the second interface modification layer 60.

[0135] In S141:

[0136] In some embodiments, the metal salt includes one or more of zinc salt, nickel salt, titanium salt, tin salt, tantalum salt, zirconium salt, chromium salt, molybdenum salt, tungsten salt, copper salt, and vanadium salt.

[0137] Exemplarily, the zinc salt includes one or more of zinc acetate, zinc sulfate, zinc halide, zinc aminosulfonate, zinc nitrate, zinc acetate tetrahydrate, zinc carbonate, zinc sulfite, zinc silicate, zinc thiocyanate, zinc cyanide, and zinc phosphate.

[0138] Preferably, the metal element in the metal salt is the same as the metal element in the first carrier functional layer 20.

[0139] In some embodiments, in the second electrolyte, the molar concentration of the metal salt is 0.001 mol / L to 0.05 mol / L, and can be, for example, 0.002 mol / L, 0.005 mol / L, 0.008 mol / L, 0.01 mol / L, 0.02 mol / L, 0.03 mol / L, 0.04 mol / L, etc. Within the range of the molar concentration, it is beneficial for the metal salt to be fully dispersed and dissolved.

[0140] In some embodiments, the second electrolyte includes an alcohol-water electrolyte. Further, in the alcohol-water electrolyte, the volume ratio of water to alcohol is (0.001 - 0.5):1, and can be, for example, 0.01:1, 0.05:1, 0.1:1, 0.2:1, 0.3:1, 0.4:1, etc. Within the range of the volume ratio, the solubility of the alcohol-water electrolyte is good, and the alcohol can electrolyze -OH, which is attached to the second inorganic particles formed by the deposition of the metal salt, so as to effectively improve the defects on the side of the second inorganic particles close to the first electrode 10, promote the close combination with the first electrode 10, and improve the stability.

[0141] In S142:

[0142] In some embodiments, the second electrochemical deposition includes one or more of cyclic voltammetry deposition, pulse deposition, square wave deposition, potentiostatic deposition, and galvanostatic deposition.

[0143] In some embodiments, the current density of the second electrochemical deposition is 2 mA / cm 2 ~20 mA / cm 2 and can be, for example, 5 mA / cm 2 、8 mA / cm 2 、10 mA / cm 2 、12 mA / cm 2 、15 mA / cm 2 、18 mA / cm 2 etc. The time of the second electrochemical deposition is 3 min to 60 min, and can be, for example, 5 min, 8 min, 10 min, 20 min, 30 min, 40 min, 50 min, etc.

[0144] Thus, under the conditions of the second electrochemical deposition, it is beneficial to efficiently deposit the second interfacial modification layer 60 containing hydroxyl group-containing second inorganic particles.

[0145] It can be understood that the formation methods of the first electrode 10, the first carrier functional layer 20, the active layer 40, the second carrier functional layer 70, and the second electrode 50 can be realized by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition method, successive ionic layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, and coprecipitation method. Physical methods include physical coating method and solution method. Among them, physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.; solution methods can be spin coating method, printing method, inkjet printing method, doctor blade coating method, printing method, dip coating method, immersion method, spraying method, roll coating method, casting method, slot die coating method, and bar coating method, etc.

[0146] In a third aspect, an embodiment of the present application further provides a display device, which includes the above optoelectronic device, or an optoelectronic device prepared by the above preparation method.

[0147] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0148] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0149] Embodiment 1

[0150] This embodiment provides an optoelectronic device, and the preparation method is as follows:

[0151] The substrate coated with ITO is ultrasonically cleaned with acetone and ethanol for 15 minutes, then cleaned with deionized water and dried, and then dried on a heating plate at 150 °C for 10 minutes, and then irradiated with ultraviolet light for 20 minutes to increase the ITO work function and form an anode;

[0152] A PEDOT:PSS with a mass fraction of 2.8% is spin-coated on the ITO anode at a rotation speed of 3000 rpm for 30 seconds, and then heated on a heating plate at 150 °C for 20 minutes to form a hole injection layer with a thickness of 20 nm;

[0153] Place it in an inert atmosphere, spin-coat TFB at 8 mg / mL, at a rotation speed of 3000 rpm for 30 s, and then heat it on a hot plate at 170 °C for 20 min to form a hole transport layer with a thickness of 15 nm;

[0154] Provide a quantum dot solution of 30 mg / mL CdZnSe / ZnCdS / ZnS (PL = 470 nm), spin-coat it on the hole transport layer, at a rotation speed of 2000 rpm for 30 s, and then heat it on a hot plate at 80 °C for 5 min to form a light-emitting layer with a thickness of 40 nm;

[0155] Place the above device in an electrolyte containing 0.01 mol / L thiourea, 0.01 mol / L zinc nitrate, 0.001 mol / L silver nitrate, and with a volume ratio of water:ethanol of 0.2:1. Adopt a two-electrode system, use an inert electrode Pt for the counter electrode anode, and the current density of the constant cathode current is 12 mA / cm 2 , in an inert atmosphere, deposit for 10 min at room temperature to form a prefabricated first interface modification layer; place the prefabricated first interface modification layer under oxygen plasma for treatment, with a gas flow rate of 200 L / h, plasma energy of 20 eV, and treatment time of 5 min to form a first interface modification layer. The first interface modification layer includes a first sub-layer containing zinc sulfide and silver sulfide, and a second sub-layer containing zinc sulfide, silver sulfide, zinc oxide, and silver oxide;

[0156] Spin-coat a ZnO ethanol dispersion at 40 mg / mL, at a rotation speed of 4000 rpm for 30 s, and then remove the high-boiling solvent with a low pressure of 0.01 Pa, with a pumping time of 20 min to form an electron transport layer with a thickness of 30 nm;

[0157] Through thermal evaporation, perform cathode evaporation on the treated device, with a vacuum degree not higher than 3x10 -4 Pa, evaporate Al at a speed of 1 Å / s for 1000 s to form a cathode with a thickness of 100 nm;

[0158] Encapsulate to obtain an optoelectronic device.

[0159] Example 2

[0160] Example 2 is basically the same as Example 1, the only difference being that in Example 2, the CdZnSe / ZnCdS / ZnS quantum dots are replaced with CdZnSe quantum dots.

[0161] Example 3

[0162] Example 3 is basically the same as Example 1, the only difference being that in Example 3, ZnO in the electron transport layer is replaced with TiO2.

[0163] Example 4

[0164] Example 4 is basically the same as Example 1, except that in Example 4, the oxygen plasma treatment is replaced by oxygen ion irradiation treatment, the energy of the oxygen ion irradiation is 500 eV, and the time is 5 min.

[0165] Example 5

[0166] Example 5 is basically the same as Example 1, except that in Example 5, the oxygen plasma treatment is replaced by ozone introduction treatment, the gas flow rate of ozone is 200 L / min, and the time is 5 min.

[0167] Example 6

[0168] Example 6 is basically the same as Example 1, except that in Example 6, silver nitrate for forming the prefabricated first interface modification layer is replaced by magnesium nitrate, and the material of the electron transport layer is magnesium-doped zinc oxide, where the doping mass content of magnesium is 15%.

[0169] Example 7

[0170] Example 7 is basically the same as Example 1, except that after forming the electron transport layer in Example 7, it further includes:

[0171] After heating the above device at 100 °C for 10 min, it is placed in an electrolyte of 0.01 mol / L zinc nitrate with a volume ratio of water to ethanol of 0.2:1, and the current density of the constant cathode current is 12 mA / cm 2 , in an inert atmosphere, at room temperature, deposit for 10 min, and then evacuate at a low pressure of 0.1 Pa for 5 min to form a second interface modification layer, and the material of the second interface modification layer includes zinc oxide containing hydroxyl groups.

[0172] Example 8

[0173] Example 8 is basically the same as Example 1, except that in Example 8, it is prepared in the order of cathode, electron transport layer, light-emitting layer, first interface modification layer, hole transport layer, and anode, and the material of the cathode is replaced by ITO, the material of the anode is replaced by Ag, zinc nitrate for forming the prefabricated first interface modification layer is replaced by nickel nitrate, and the material of the hole transport layer is replaced by NiO.

[0174] Example 9

[0175] Example 9 is basically the same as Example 8, except that in Example 9, silver nitrate for forming the prefabricated first interface modification layer is replaced by copper nitrate, and the material of the hole transport layer is copper-doped nickel oxide, where the doping mass content of copper is 15%.

[0176] Example 10

[0177] Example 10 is basically the same as Example 8, except that after forming the hole transport layer in Example 10, it further includes:

[0178] After heating the above device at 100 °C for 10 min, it is placed in an electrolyte of 0.01 mol / L nickel nitrate with a volume ratio of water to ethanol of 0.2:1, and the current density of the constant cathode current is 12 mA / cm 2 , and it is deposited for 10 min at room temperature in an inert atmosphere, and then evacuated at a low pressure of 0.1 Pa for 5 min to form a second interface modification layer, and the material of the second interface modification layer includes nickel oxide containing hydroxyl groups.

[0179] Comparative Example 1

[0180] Comparative Example 1 is basically the same as Example 1, except that Comparative Example 1 does not contain the first interface modification layer.

[0181] Comparative Example 2

[0182] Comparative Example 2 is basically the same as Example 1, except that Comparative Example 2 does not contain the first interface modification layer, and the material in the electron transport layer of Comparative Example 2 is magnesium-doped ZnO.

[0183] Comparative Example 3

[0184] Comparative Example 3 is basically the same as Example 1, except that Comparative Example 3 does not contain the first interface modification layer, and ZnS is directly spin-coated between the light-emitting layer and the electron transport layer by the solution method to form a ZnS interface layer.

[0185] Comparative Example 4

[0186] Comparative Example 4 is basically the same as Example 1, except that Comparative Example 4 does not contain the first interface modification layer, and the material in the electron transport layer of Comparative Example 4 includes ZnO and Ag2S.

[0187] Comparative Example 5

[0188] Comparative Example 5 is basically the same as Example 8, except that Comparative Example 5 does not contain the first interface modification layer.

[0189] The J-V curves (current density-voltage curves) and C.E.-L curves (current efficiency-brightness curves) of the optoelectronic devices of Example 1, Examples 6-7 and Comparative Examples 1-2 are tested, and the current density-voltage curves are as Figure 5 shown, and the current efficiency-brightness curves are as Figure 6 shown.

[0190] Among them, the test method is: measured by an efficiency test system built with Keithley 2400 and Keithley 6485.

[0191] FromFigure 5 It can be seen that after 2V voltage, at the same voltage, in Comparative Example 1, the electron transport layer is conventional ZnO, which contains more defects and cannot effectively adjust the energy level of the electron transport layer. The interfacial contact performance between the film layers is poor, and leakage current is likely to occur. Therefore, its current density is the worst. In Example 7, the first interfacial modification layer is used to improve the interfacial contact between the electron transport layer and the light-emitting layer, and the second interfacial modification layer is used to improve the interfacial contact between the electron transport layer and the cathode, making the connection between the film layers denser, improving the stability of the optoelectronic device, and thus increasing the current density.

[0192] It can be seen from Figure 6 that after 100 cd / m 2 brightness, at the same brightness, the current efficiency of the optoelectronic device in Example 7 > Example 6 > Example 1 > Comparative Example 2 > Comparative Example 1. In Comparative Example 2, ZnO is doped with Mg, and its current efficiency is better than that of ZnO in Comparative Example 1. The first interfacial modification layer is added in Examples 1, 6 - 7, and the effects are all better than those in Comparative Examples 1 - 2. In addition, the second interfacial modification layer is added in Example 7, and the current efficiency is the highest, indicating that the optoelectronic device provided by this solution effectively improves the interfaces between carriers, the light-emitting layer, and the electrodes, thereby improving the current efficiency of the optoelectronic device.

[0193] The brightness L, lifetime T95, and T95@1k nit of the optoelectronic devices in Examples 1 - 10 and Comparative Examples 1 - 5 are tested, and the results are shown in Table 1.

[0194] Among them, the brightness L is measured by an efficiency test system built with Keithley 2400 and Keithley 6485.

[0195] The test methods for the lifetime T95 and T95@1k nit are as follows: When the device is driven under a constant current or voltage, the time required for the brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifetime is the measured lifetime. To shorten the test cycle, the device lifetime test is usually carried out by accelerating the device aging at high brightness and fitting the lifetime at high brightness through an extended exponential decay brightness decay fitting formula. For example, the lifetime at 1000 nit is denoted as T95@1000 nit. The specific calculation formula is as follows:

[0196]

[0197] Among them, T95 L is the lifetime at low brightness, T95 H is the measured lifetime at high brightness, L H is the device accelerated to the maximum brightness, L Lis 1000 nit, A is the acceleration factor. In this experiment, the value of A is obtained as 1.7 by measuring the lifetimes of several groups of blue QLED devices at the rated brightness.

[0198] Table 1

[0199]

[0200]

[0201] It can be seen from Table 1 that:

[0202] From Examples 1 to 3 and Comparative Examples 1, 3 to 4, it can be obtained that by electrochemically depositing a prefabricated interface modification layer between the light-emitting layer and the electron transport layer, and then using oxygen plasma treatment to form a first interface modification layer containing MA and metal oxides, the brightness and service life of the optoelectronic device can be significantly improved; among them, whether the first interface modification layer is consistent with the non-metallic elements of the quantum dots in the light-emitting layer or with the metal elements in the electron transport layer, it is beneficial to regulate the interface between the film layers. When the first interface modification layer is simultaneously consistent with the non-metallic elements of the quantum dots in the light-emitting layer and with the metal elements in the electron transport layer, the performance of the optoelectronic device is relatively the best;

[0203] From Examples 1, 4 to 5 and Comparative Example 1, it can be obtained that whether it is oxidation treatment by oxygen plasma treatment, oxygen ion irradiation or ozone atmosphere, the side of the prefabricated first interface modification layer far from the light-emitting layer can be oxidized to form an oxide, reducing the interface barrier with the electron transport layer, improving the brightness of the optoelectronic device, and extending the service life of the optoelectronic device;

[0204] From Examples 1, 6 to 7 and Comparative Examples 1 to 2, it can be obtained that adding doped metal elements to the first interface modification layer and the material in the electron transport layer being doped metal oxide can further improve the performance of the optoelectronic device, because the doped metal can effectively regulate the energy level matching and thus regulate the electron injection; similarly, by setting a second interface modification layer between the cathode and the electron transport layer, the material of which contains active functional groups of hydroxyl, an interface reaction can occur with the cathode, reducing the interface instability caused by the aging process, and thus improving the brightness of the optoelectronic device and extending the service life of the optoelectronic device;

[0205] From Example 1, Examples 8 to 10 and Comparative Example 5, it can be obtained that adding a first interface modification layer between the hole transport layer and the light-emitting layer and / or adding a second interface modification layer between the hole transport layer and the anode can also regulate the interfaces between the hole transport layer and the light-emitting layer and the anode, and improve the performance of the optoelectronic device.

[0206] The above has introduced in detail the optoelectronic device, its manufacturing method, and the display device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. An optoelectronic device, characterized in that, It includes a first electrode, a first charge carrier functional layer, a first interface modification layer, an active layer, and a second electrode that are sequentially stacked. Among them, the first interface modification layer includes a first sub-layer and a second sub-layer, and the first sub-layer is disposed between the second sub-layer and the active layer; the material of the first sub-layer includes a first metal compound, and the material of the second sub-layer includes a second metal compound and a metal oxide.

2. The optoelectronic device according to claim 1, wherein the first metal compound and the second metal compound do not include metal oxides; and / or the second sub-layer further includes a composite in which the second metal compound is bonded to the metal oxide; and / or the first metal compound is the same as the second metal compound; and / or the metal element in the first metal compound and the second metal compound is the same as the metal element in the metal oxide; and / or the material of the first charge carrier functional layer includes a first charge carrier functional material, and the metal element in the second metal compound is the same as the metal element in the first charge carrier functional material; and / or the material of the active layer includes an active material, and the non-metal element in the first metal compound is the same as the non-metal element in the active material; and / or the thickness of the first interface modification layer is 0.5 nm to 7 nm.

3. The optoelectronic device according to claim 2, wherein the metal elements in the first metal compound, the second metal compound, and the metal oxide each independently include a main metal element, or include a main metal element and a doped metal element; and / or the non-metal elements in the first metal compound and the second metal compound are each independently one or more of S, Se, Te, N, As, and P; and / or the first charge carrier functional material includes a first inorganic particle; the first inorganic particle includes a first N-type inorganic particle or a first P-type inorganic particle; and / or the active material includes a light-emitting material, and the light-emitting material includes a quantum dot light-emitting material.

4. The optoelectronic device according to claim 3, wherein the main metal element includes one or more of Zn, Ni, Ti, Sn, Ta, Zr, Cr, Mo, W, Cu, and V; and / or the doped metal element is selected from a first doped element or a second doped element; the first doped element includes one or more of Al, Ga, In, Ag, W, Mo, Sn, V, and Fe; the second doped element includes one or more of Mg, Ca, Cu, Ni, Co, and Zn; and / or the main metal element is different from the doped metal element; and / or the molar ratio of the main metal element to the doped metal element is 1:(0, 0.5].

5. The optoelectronic device according to claim 3, wherein the average particle size of the first inorganic particle is 2 nm to 20 nm; and / or The first N-type inorganic particles include first doped metal oxide particles or first undoped metal oxide particles. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The metal elements in the first undoped metal oxide particles and the first doped metal oxide particles are the same as the main metal element, and the doping elements in the first doped metal oxide particles are the same as the doped metal element; and / or The first P-type inorganic particles include second doped metal oxide particles or second undoped metal oxide particles. The metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal elements in the second undoped metal oxide particles and the second doped metal oxide particles are the same as the main metal element, and the doping elements in the second doped metal oxide particles are the same as the doped metal element; and / or The average particle size of the quantum dots is 8 nm to 20 nm; and / or The quantum dot light-emitting material is selected from one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds; the shell layer of the core-shell structure quantum dots includes one or more layers; the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2;The quantum dots of the core-shell structure are selected from one or more of CdZnSe / ZnCdS / ZnS, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is BYX3, wherein B is Cs; + ion, Y is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is CYX3, wherein C is an organic amine cation selected from CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, Y is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion selected from Cl - Br - ,I - One or more of the .

6. The optoelectronic device according to claim 1, characterized in that, The optoelectronic device further includes a second interface modification layer disposed between the first electrode and the first carrier functional layer. The material of the second interface modification layer includes second inorganic particles containing hydroxyl ligands.

7. The optoelectronic device according to claim 6, wherein The average particle size of the second inorganic particles is 2 nm to 20 nm; and / or The second inorganic particles include second N-type inorganic particles or second P-type inorganic particles. The second N-type inorganic particles include first undoped metal oxide particles and IIB-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The second P-type inorganic particles include second undoped metal oxide particles. The material in the second undoped metal oxide particles includes one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5; and / or The metal element in the second inorganic particles is the same as the metal element in the first carrier functional material; and / or The thickness of the second interface modification layer is 5 nm to 30 nm.

8. The optoelectronic device according to claim 1, characterized in that, The optoelectronic device further includes a second carrier functional layer, and the second carrier functional layer is disposed between the active layer and the second electrode; The first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer; or, the first carrier functional layer is an electron functional layer, and the second carrier functional layer is a hole functional layer.

9. The optoelectronic device according to claim 8, wherein When the first carrier functional layer is a hole functional layer, the material of the first carrier functional layer is a first P-type inorganic particle; when the first carrier functional layer is an electron functional layer, the material of the first carrier functional layer is a first N-type inorganic particle; and / or When the second charge carrier functional layer is a hole functional layer, the materials of the second charge carrier functional layer include 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS derivatives doped with s-MoO3, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfide, metal selenide and metal nitride, one or more of them, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfide includes one or more of CuS, MoS3, WS3, the metal selenide includes one or more of MoSe3, WSe3, the metal nitride includes p-type gallium nitride; and / or When the second charge carrier functional layer is an electron functional layer, the material of the second charge carrier functional layer includes one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or The first electrode and the second electrode each independently include one or more of a metal, a carbon material, and a metal oxide. The metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides. The material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO3, and AMO. The composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2.

10. A method for preparing an optoelectronic device, characterized in that, Comprising: Providing a photoelectric device preform, including a second electrode and an active layer stacked in sequence; Providing a first metal compound, and disposing the first metal compound on the active layer to form a prefabricated first interface modification layer; Performing an oxidation treatment on the prefabricated first interface modification layer to form a first interface modification layer. The first interface modification layer includes a first sub-layer and a second sub-layer. The first sub-layer is disposed between the active layer and the second sub-layer. The material of the first sub-layer includes a first metal compound. The material of the second sub-layer includes a second metal compound and a metal oxide; Forming a first charge carrier functional layer and a first electrode on the first interface modification layer to obtain a photoelectric device.

11. The preparation method according to claim 10, characterized in that, The oxidation treatment of the prefabricated first interface modification layer includes ozone treatment, oxygen plasma treatment or oxygen ion treatment.

12. The preparation method according to claim 11, wherein the gas flow rate of the oxygen plasma treatment is 50 L / h to 400 L / h; the plasma energy is 5 eV to 50 eV; the treatment time is 1 min to 20 min; and / or the oxygen ion treatment includes oxygen ion irradiation, and the energy of the oxygen ion irradiation is 50 eV to 2000 eV; the treatment time is 1 min to 20 min; and / or the ozone treatment includes introducing ozone or placing it in an ozone atmosphere, and the gas flow rate of the ozone is 50 L / min to 500 L / min; the treatment time is 1 min to 20 min.

13. The preparation method according to claim 10, characterized in that, The method for forming the prefabricated first interface modification layer includes: providing a first electrolyte, which includes a first metal element precursor, a first non-metal element precursor, and a first electrolyte; placing the prefabricated optoelectronic device in the first electrolyte and performing first electrochemcial deposition to form a prefabricated first interface modification layer.

14. The preparation method according to claim 13, wherein the first metal element precursor includes a main metal precursor and a doped metal precursor; the main metal precursor includes one or more of a zinc precursor, a nickel precursor, a titanium precursor, a tin precursor, a tantalum precursor, a zirconium precursor, a chromium precursor, a molybdenum precursor, a tungsten precursor, a copper precursor, and a vanadium precursor; the doped metal precursor includes a first doped metal precursor or a second doped metal precursor; the first doped metal precursor includes one or more of an aluminum precursor, a gallium precursor, an indium precursor, a silver precursor, a tungsten precursor, a molybdenum precursor, a tin precursor, a vanadium precursor, and an iron precursor; the second doped metal precursor includes one or more of a magnesium precursor, a calcium precursor, a copper precursor, a nickel precursor, a cobalt precursor, and a zinc precursor; and / or the first non-metal element precursor includes one or more of a sulfur precursor, a selenium precursor, a tellurium precursor, a nitrogen precursor, an arsenic precursor, and a phosphorus precursor; and / or the first electrolyte includes an alcohol-water electrolyte.

15. The preparation method according to claim 14, wherein the molar concentration ratio of the main metal in the main metal precursor to the doped metal ion in the doped ion precursor is 1:(0, 0.5]; and / or in the first electrolyte, the molar concentration of the main metal precursor and / or the doped metal precursor is 0.001 mol / L to 0.5 mol / L; and / or the molar concentration of the first non-metal element precursor is 0.001 mol / L to 1 mol / L; and / or in the alcohol-water electrolyte, the volume ratio of water to alcohol is (0.001 to 0.5):1; and / or The current density of the first electrochemcial deposition is 2 mA / cm 2 ~20 mA / cm 2 ; and the time is 3 min to 60 min.

16. The preparation method according to claim 10, wherein After forming the first carrier functional layer on the first interface modification layer, the method further includes: forming a second interface modification layer on the first carrier functional layer, and forming a first electrode on the second interface modification layer to obtain an optoelectronic device; the method for forming the second interface modification layer includes: providing a second electrolyte solution, where the second electrolyte solution includes a metal salt and a second electrolyte; placing the first carrier functional layer in the second electrolyte solution and performing a second electrochemical deposition to form the second interface modification layer.

17. The preparation method according to claim 16, wherein the metal salt includes one or more of zinc salt, nickel salt, titanium salt, tin salt, tantalum salt, zirconium salt, chromium salt, molybdenum salt, tungsten salt, copper salt, vanadium salt; and / or in the second electrolyte solution, the molar concentration of the metal salt is 0.001 mol / L to 0.05 mol / L; and / or the second electrolyte includes an alcohol-water electrolyte; in the alcohol-water electrolyte, the volume ratio of water to alcohol is (0.001 to 0.5):1; and / or The current density of the second electrochemcial deposition is 2 mA / cm 2 ~20 mA / cm 2 ; and the time is 3 min to 60 min.

18. A display device, characterized in that, including the optoelectronic device according to any one of claims 1 to 9, or including the optoelectronic device prepared by the preparation method according to any one of claims 10 to 17.

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