Thin film and preparation method thereof, photoelectric device and preparation method thereof, and display device

Abstract

The invention discloses a thin film and a preparation method thereof, a photoelectric device and a preparation method thereof, and a display device.The preparation method of the thin film comprises the steps that functional material dispersion liquid is provided, and the functional material dispersion liquid comprises a functional material and a solvent; depositing the functional material dispersion liquid to form a liquid film; the liquid film is dried through airflow, the film is obtained, and the temperature of the airflow is larger than or equal to the boiling point of the solvent. According to the method, the pneumatic drying process is adopted to replace high-vacuum drying, so that the damage of the high-vacuum process to the film in the solvent removal process is avoided, the film forming quality is improved, and the preparation cost of the photoelectric device is reduced. Meanwhile, active substances are added into airflow, the thin film is modified in the drying process, damage to a film layer is reduced, and therefore the performance of the device is improved, and the service life of the device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to a method for preparing a thin film, a thin film obtained by the preparation method, a method for preparing an optoelectronic device, an optoelectronic device including the thin film, and a display device including the optoelectronic device. Background Art

[0002] A thin film refers to a two-dimensional material formed by depositing at least one of atoms, molecules, or ions on the surface of a substrate. The material of the thin film can be at least one of organic compounds and inorganic compounds. The types of thin films include, but are not limited to, optical thin films and semiconductor thin films. Thin films are widely used in fields such as electronics, machinery, and printing. Currently, thin films are usually prepared by a solution method. For thin films prepared by the solution method, drying is required to remove the solvent.

[0003] Existing drying methods for thin films include heat drying, vacuum drying, etc. However, since the solution for preparing the thin film usually has the characteristics of high boiling point and high viscosity, the vacuum drying method is often used to remove the solvent in the liquid film. However, the use of high-vacuum equipment will greatly increase the preparation cost of the film layer, and the performance of the thin film still needs to be improved.

[0004] Therefore, there is an urgent need for a low-cost drying method for thin films. Summary of the Invention

[0005] In view of this, the present application provides a thin film and its preparation method, an optoelectronic device and its preparation method, and a display device, aiming to improve the problem of high preparation cost of existing thin films.

[0006] The embodiments of the present application are implemented as follows:

[0007] In a first aspect, the present application provides a method for preparing a thin film, including the following steps:

[0008] Providing a functional material dispersion, wherein the functional material dispersion includes a functional material and a solvent;

[0009] Depositing the functional material dispersion to form a liquid film;

[0010] Drying the liquid film with an air flow to obtain a thin film, wherein the temperature of the air flow is greater than or equal to the boiling point of the solvent.

[0011] Optionally, the difference between the temperature of the air flow and the boiling point of the solvent is 0 to 50 °C;

[0012] The air flow includes an inert gas, and the inert gas is selected from one or more of N2, He, Ne, Ar, Kr, and Xe; and / or,

[0013] The volume fraction of the inert gas in the gas stream is 50-99%; and / or,

[0014] The flow rate of the gas stream is 0.1 m / s - 10 m / s.

[0015] Optionally, the gas stream further includes an active substance, and the active substance is selected from one or more of R1-SH and its derivatives, R2-OH and its derivatives, wherein R1 and R2 are each independently selected from organic groups having 1 to 10 carbon atoms.

[0016] Optionally, the organic groups having 1 to 10 carbon atoms are selected from one or more of C1-C10 alkyl groups, C1-C10 alkenyl groups, C1-C10 alkynyl groups, C1-C10 alkoxy groups, C1-C10 cycloalkane groups, and C1-C10 carbonyl groups.

[0017] Optionally, the R1-SH and its derivatives are selected from one or more of C1-C10 thiols and C1-C10 thioethers, and the R2-OH and its derivatives are selected from one or more of phenol, cresol, hydroquinone, and anisole; and / or,

[0018] The temperature of the gas stream is greater than or equal to the boiling point of the active substance.

[0019] Optionally, the thiol is selected from one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, and 1,3-propanedithiol; and / or,

[0020] The thioether is selected from one or more of disulfide, ethyl thioether, ethylene dithiol, and octyl thioether; and / or,

[0021] In the gas stream, the volume fraction of the active substance is 1% - 10%.

[0022] Optionally, the functional material is an organic functional material or an inorganic functional material, wherein the organic functional material includes an organic P-type semiconductor material, an organic N-type semiconductor material, and an organic light-emitting material; the inorganic functional material includes P-type inorganic particles, N-type inorganic particles, and quantum dots.

[0023] Optionally, the organic P-type semiconductor material is selected from one or more of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(9-vinylcarbazole), poly(triphenylamine), 4,4',4''-tris(carbazol-9-yl)triphenylamine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetrafluorotetracyanoquinodimethane, and copper phthalocyanine; and / or,

[0024] The P-type inorganic particles include one or more of first doped metal oxide particles, first undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the first doped metal oxide particles and the metal oxides in the first undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the first doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS3, and WS3. The metal selenides include one or more of MoSe3 and WSe3. The metal nitrides include one or more of P-type gallium nitride, MoS2, MoS3, MoSe2, MoSe3, and WS3; and / or,

[0025] The organic N-type semiconductor material is selected from one or more of aromatic heterocycles such as oxadiazole, quinoline, benzothiazole, benzoxazole, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or,

[0026] The N-type inorganic particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the second undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the second doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the second doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials include one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS and CuGaS; and / or,

[0027] The organic light-emitting material is selected from one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material emitting blue light, TTPX fluorescent material emitting green light, TBRb fluorescent material emitting orange light, DBP fluorescent material emitting red light, delayed fluorescence materials, TTA materials, TADF materials, polymers containing B-N covalent bonds, HLCT materials, and exciplex light-emitting materials; and / or,

[0028] The quantum dots are selected from one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb;The I-III-VI group compounds are selected from one or more of CuInS2, CuInSe2, and AgInS2, and the core-shell structured quantum dots are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite-type semiconductor material is selected from doped or undoped inorganic perovskite-type semiconductors, or organic-inorganic hybrid perovskite-type semiconductors; the structural general formula of the inorganic perovskite-type semiconductor is AMX3, where A is Cs; + ion, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of them, and X is a halogen anion, including Cl - 、Br - 、I - one or more of them; and / or,

[0029] The structural general formula of the organic-inorganic hybrid perovskite-type semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2 + 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of them, and X is a halogen anion, including Cl - 、Br - 、I -One or more of them.

[0030] Optionally, in the functional material dispersion liquid, the concentration range of the functional material is 5-60 mg / ml; and / or,

[0031] The solvent is selected from one or more of water, DMSO, DMF, ethylene glycol, cyclohexanol, n-pentanol, chlorobenzene, bromobenzene, phosphonodibromobenzene, benzofuran, xylene, ethylbenzene, ethanol, o-diphenyldecane, propylcyclohexane, n-hexane, n-octane, cyclohexane.

[0032] Optionally, when the functional material in the thin film is an inorganic functional material, a ligand is further connected to the surface of the inorganic functional material, and the ligand includes one or more of alkylamine, thiol, and organic acid; the alkylamine is selected from one or more of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, n-propylamine, and n-butylamine, the thiol is selected from one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, and 1,3-propanedithiol, and the organic acid is selected from one or more of tartaric acid, oxalic acid, malic acid, citric acid, ascorbic acid, benzoic acid, salicylic acid, and caffeic acid.

[0033] In a second aspect, an embodiment of the present application provides a thin film, and the thin film is prepared by the preparation method of the thin film as described above.

[0034] In a third aspect, an embodiment of the present application provides a preparation method of an optoelectronic device, including the following steps:

[0035] Provide a first electrode;

[0036] Form one or more functional layers on the first electrode by using the preparation method of the thin film as described in any one of the above;

[0037] Form a second electrode on the functional layer far from the first electrode to obtain an optoelectronic device.

[0038] In a third aspect, an embodiment of the present application provides an optoelectronic device, including a first electrode, at least one functional layer, and a second electrode which are sequentially stacked, wherein at least one of the functional layers includes a thin film prepared by the preparation method of the thin film as described above or the thin film as described above.

[0039] Optionally, at least one of the functional layers is selected from at least one of a hole functional layer, an electron functional layer, and a light-emitting layer. When the functional layer includes the hole functional layer, the material of the hole functional layer includes at least one of an organic hole functional material and P-type inorganic particles. When the functional layer includes the electron functional layer, the material of the electron functional layer includes an organic electron functional material or N-type inorganic ions. When the functional layer includes the light-emitting layer, the material of the light-emitting layer includes an organic light-emitting material or quantum dots.

[0040] Optionally, the first electrode and the second electrode are each independently selected from a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode of a metal and a metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

[0041] In a fifth aspect, an embodiment of the present application provides a display device, which includes the optoelectronic device prepared by the method for preparing an optoelectronic device as described above or includes the optoelectronic device as described above.

[0042] In the technical solution provided by the present application, a method for preparing a thin film is provided. By replacing the drying process of preparing a functional thin film by the existing solution method with air drying instead of high-vacuum VD, the damage to the film layer during the process of removing the solvent in the functional thin film by the high-vacuum process is avoided, the film-forming performance of the functional thin film is improved, and at the same time, the preparation cost of the thin film is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0044] Figure 1 is a schematic flowchart of a method for preparing a thin film provided by an embodiment of the present application;

[0045] Figure 2 is a schematic flowchart of a method for preparing an optoelectronic device provided by an embodiment of the present application;

[0046] Figure 3 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0047] Figure 4 is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0048] Figure 5 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application;

[0049] Figure 6 It is a schematic structural diagram of an optoelectronic device provided by an embodiment of the present application.

[0050] Reference numerals:

[0051] 100 - optoelectronic device; 101 - substrate; 10 - first electrode; 201 - hole functional layer; 2011 - hole injection layer; 2012 - hole transport layer; 2013 - electron transport layer, 2014 - electron injection layer; 202 - light emitting layer; 203 - electron functional layer; 30 - second electrode. Detailed implementation manners

[0052] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0053] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" usually refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third, etc. are only used as labels, and no numerical requirements are imposed or an order is established.

[0054] In the present application, "and / or" describes the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Wherein A and B can be singular or plural.

[0055] In this application, "at least one" means one or more, and "a plurality" means two or more. "At least one kind", "at least one (item) below" or similar expressions refer to any combination of these items, including any combination of single item (s) or plural items (s). For example, "at least one (item) among a, b, or c", or "at least one (item) among a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0056] The various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub - ranges and individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0057] Quantum dot light - emitting diode (QLED) devices have the advantages of high emission color purity, color tunability, high efficiency, good stability, and full - solution processability, and have become a potential new display technology to replace OLED light - emitting displays. Currently, the common device structures of QLEDs include an anode, a hole - functional layer, a quantum dot light - emitting layer, an electron - functional layer, and a cathode. During the preparation processes of the hole - functional layer, the quantum dot light - emitting layer, and the electron - functional layer, the solutions used are usually solvents with high boiling points and high viscosities. Currently, high - vacuum processes are mainly used to remove the high - boiling - point and high - viscosity solvents in the film layer. However, the use of high - vacuum equipment will greatly increase the preparation cost of the film layer. At the same time, since most of the particles in the film layer are nanoparticles, the high - vacuum conditions will have a certain impact on the arrangement of the nanoparticles, making the performance consistency of the prepared film layer worse, and ultimately affecting the performance and lifespan of optoelectronic devices. This application aims at the problems of high preparation cost and poor film layer consistency existing in the existing high - vacuum drying process for thin - film preparation; on the one hand, an air - flow drying process is used to replace high - vacuum VD to remove the solvent in the thin film; on the other hand, an active substance is added to the air flow during the drying process, and the active substance reacts with the active sites in the thin film and modifies the film layer surface, reducing the damage to the film layer during the drying process, thereby improving the device performance and lifespan.

[0058] The technical solution of this application is as follows:

[0059] Please refer to Figure 1 , an embodiment of the present application provides a method for preparing a thin film, including the following steps:

[0060] Step S11: Provide a functional material dispersion, wherein the functional material dispersion includes a functional material and a solvent.

[0061] Step S12: Deposit the functional material dispersion to form a liquid film.

[0062] It can be understood that the dispersion can be set on a substrate to form a liquid film.

[0063] Step S13: Dry the liquid film with an air flow to obtain a thin film, wherein the temperature of the air flow is greater than or equal to the boiling point of the solvent.

[0064] In the method for preparing a thin film according to the present application, by replacing the drying process of the existing solution method for preparing a functional thin film with a high-vacuum VD chamber process with an air flow drying process, on the one hand, the damage to the film layer during the removal of the solvent in the functional film layer by the high-vacuum process is avoided, and the performance of the film layer is improved; on the other hand, the preparation cost of the functional film layer is reduced.

[0065] In some embodiments, the difference between the temperature of the air flow and the boiling point of the solvent is 0 to 50 °C. For example, the difference between the temperature of the air flow and the boiling point of the solvent can be 0 °C, 5 °C, 10 °C, 15 °C, 20 °C, 25 °C, 30 °C, 35 °C, 40 °C, 45 °C, 50 °C, and values within the range between any two of the above-listed values, etc. Controlling the air flow temperature within this range can effectively volatilize the solvent and result in a good film-forming effect.

[0066] The gas in the air flow is an inert gas, and the inert gas is selected from one or more of N2, He, Ne, Ar, Kr, and Xe.

[0067] The volume fraction of the inert gas in the air flow is 50 - 99%. For example, the volume fraction of the inert gas in the air flow can be 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99%, and values within the range between any two of the above-listed values, etc.

[0068] The flow rate of the air flow is 0.1 m / s - 10 m / s. For example, the flow rate of the air flow can be 0.1 m / s, 0.5 m / s, 1 m / s, 2 m / s, 3 m / s, 4 m / s, 5 m / s, 6 m / s, 7 m / s, 8 m / s, 9 m / s, 9.5 m / s, 10 m / s, and values within the range between any two of the above-listed values, etc. Controlling the gas flow rate within this range can balance the drying speed and the film layer performance.

[0069] In some embodiments, the gas stream further includes an active substance, and the active substance is selected from one or more of R1-SH and its derivatives, R2-OH and its derivatives, wherein R1 and R2 are each independently selected from organic groups having 1 to 10 carbon atoms.

[0070] In some embodiments, the C1-C10 organic groups are selected from one or more of C1-C10 alkyl groups, C1-C10 alkenyl groups, C1-C10 alkynyl groups, C1-C10 alkoxy groups, C1-C10 cycloalkane groups, and C1-C10 carbonyl groups.

[0071] In some embodiments, the R1-SH and its derivatives are selected from one or more of C1-C10 thiols and C1-C10 thioethers, and the R2-OH and its derivatives are selected from one or more of phenol, cresol, hydroquinone, and anisole.

[0072] The temperature of the gas stream is greater than or equal to the boiling point of the active substance.

[0073] It can be understood that by setting the temperature of the gas stream above the boiling point of the active substance and the boiling point of the solvent, the active substance can be in a solid or liquid state at room temperature, exist in a gaseous state in the gas stream, and modify the liquid film during the drying process.

[0074] In some embodiments, the thiol can be selected from, but not limited to, one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, and 1,3-propanedithiol.

[0075] The thioether can be selected from, but not limited to, one or more of dithioether, ethyl thioether, ethylene dithiol, and octyl thioether.

[0076] In the gas stream, the volume fraction of the active substance can be 1%-10%. For example, the volume fraction of the added active substance in the gas stream can be 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, and values within the range between any two of the above-listed values, etc. Controlling the addition amount of the active substance in the gas stream within this range can not only ensure the quantity of the active substance but also avoid excessive adsorption of the active substance, resulting in damage to the device film layer.

[0077] By adding an active substance to the gas stream, the active substance reacts with the defect sites in the film layer during the drying process, modifies and passivates the defect sites in the film layer, reduces the damage to the film layer during the drying process, and thus further improves the performance of the film layer.

[0078] In some embodiments, in step S11:

[0079] The functional material can be an organic functional material or an inorganic functional material.

[0080] The organic functional material can be an organic p-type semiconductor material, an organic n-type semiconductor material, or an organic light-emitting material.

[0081] The inorganic functional material includes p-type inorganic particles, n-type inorganic particles, and quantum dots.

[0082] The organic p-type semiconductor material can be selected from, but not limited to, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-butylphenyl))diphenylamine)] (TFB), poly(9-vinylcarbazole) (PVK), poly(triphenylamine) (Poly-TPD), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3

[0083] (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetrafluoro-tetracyanoquinodimethane (F4-TCQN), and one or more of copper phthalocyanine.

[0084] The P-type inorganic particles may include, but are not limited to, one or more of first-doped metal oxide particles, first-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the first-doped metal oxide particles and the metal oxides in the first-undoped metal oxide particles each independently include, but are not limited to, one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, and V2O5. The doping elements in the first-doped metal oxide particles may include, but are not limited to, one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides may include, but are not limited to, one or more of CuS, MoS3, and WS3. The metal selenides may include, but are not limited to, one or more of MoSe3 and WSe3. The metal nitrides include, but are not limited to, one or more of P-type gallium nitride, MoS2, MoS3, MoSe2, MoSe3, and WS3.

[0085] The organic N-type semiconductor material may be selected from, but is not limited to, one or more of aromatic heterocycles such as oxadiazole, quinoline, benzothiazole, benzoxazole, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds.

[0086] The N-type inorganic particles may include, but are not limited to, one or more of second-doped metal oxide particles, second-undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the second-undoped metal oxide particles may include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxides in the second-doped metal oxide particles may include, but are not limited to, one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the second-doped metal oxide particles may include, but are not limited to, one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The IIB-VIA group semiconductor materials may include, but are not limited to, one or more of ZnS, ZnSe, and CdS. The IIIA-VA group semiconductor materials may include, but are not limited to, one or more of InP and GaP. The IB-IIIA-VIA group semiconductor materials may include, but are not limited to, one or more of CuInS and CuGaS.

[0087] The organic light-emitting material may be selected from, but not limited to, one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, blue-emitting TBPe fluorescent material, green-emitting TTPX fluorescent material, orange-emitting TBRb fluorescent material, red-emitting DBP fluorescent material, delayed fluorescence materials, TTA materials, TADF (thermally activated delayed) materials, polymers containing B-N covalent bonds, HLCT (hybrid local charge transfer excited state) materials, and exciplex luminescent materials.

[0088] The quantum dots may be selected from, but not limited to, one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0089] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots may be respectively selected from, but not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds, and the shell layer of the core-shell structure quantum dots includes one or more layers.

[0090] The II-VI group compounds may be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds may be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds may be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds may be selected from, but not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0091] The core-shell structured quantum dots may be selected from, but not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0092] The perovskite semiconductor material may be selected from, but not limited to, doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs + ion, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, X is a halogen anion, including Cl - , Br - , I - and one or more of them.

[0093] The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2 + , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, X is a halogen anion, including Cl - , Br - , I - and one or more of them.

[0094] In some embodiments, in the functional material dispersion liquid, the concentration range of the functional material is 5 - 60 mg / ml. Within this range, the thickness requirement of the functional layer material can be met while having a good film-forming effect. When the functional material is an organic hole functional material, the concentration range of the organic hole functional material is 5 - 50 mg / ml, and within this range, the thickness requirement of the organic hole functional layer material can be met while having a good film-forming effect. When the functional material is an organic electron functional material, the concentration range of the organic electron functional material is 15 - 60 mg / ml, and within this range, the thickness requirement of the organic electron functional layer material can be met while having a good film-forming effect. When the functional material is a light-emitting functional material, the concentration range of the light-emitting functional material is 10 - 60 mg / ml, and within this range, the thickness requirement of the light-emitting functional layer material can be met while having a good film-forming effect.

[0095] The solvent is selected from one or more of water, DMSO, DMF, ethylene glycol, cyclohexanol, n-pentanol, chlorobenzene, bromobenzene, phosphonodibromobenzene, benzofuran, xylene, ethylbenzene, ethanol, o-diphenyldecane, propylcyclohexane, n-hexane, n-octane, cyclohexane.

[0096] The solvent used for the organic hole injection functional material is selected from one or more of water, DMSO, DMF; the solvent used for the inorganic hole injection functional material is selected from one or more of ethylene glycol, cyclohexanol, n-pentanol; the solvent used for the organic hole transport functional material is selected from one or more of chlorobenzene, bromobenzene, phosphonodibromobenzene; the solvent used for the inorganic hole transport functional material is selected from one or more of DMSO, DMF, benzofuran; the solvent used for the organic electron transport functional material is selected from one or more of xylene, ethylbenzene, chlorobenzene; the solvent used for the inorganic electron injection functional material is selected from one or more of ethanol, ethylene glycol, cyclohexanol, n-pentanol; the solvent used for the organic light-emitting functional material is selected from one or more of chlorobenzene, bromobenzene, o-diphenyl; the solvent used for the inorganic light-emitting functional material is selected from one or more of decane, propylcyclohexane, ethylbenzene, n-hexane, n-octane, cyclohexane.

[0097] In some embodiments, in step S12:

[0098] The method of setting the functional material dispersion liquid on the substrate can be a solution method. The solution method can be a spin coating method, a printing method, an inkjet printing method, a doctor blade method, a printing method, a dip coating method, a soaking method, a spraying method, a roll coating method, a casting method, a slot die coating method, a bar coating method, etc.

[0099] In some embodiments, when the functional material in the thin film is an inorganic functional material, a ligand is further connected to the surface of the inorganic functional material, and the ligand includes one or more of alkylamines, thiols, and organic acids.

[0100] The alkylamines may be selected from, but not limited to, one or more of methylamine (MA), dimethylamine (DMA), trimethylamine (TMA), ethylamine (EA), diethylamine (DEA), triethylamine (TEA), 1-propanamine (PA), and 1-butanamine (BA). The thiols may be selected from, but not limited to, one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, and 1,3-propanedithiol. The organic acids may be selected from, but not limited to, one or more of tartaric acid, oxalic acid, malic acid, citric acid, ascorbic acid, benzoic acid, salicylic acid, and caffeic acid.

[0101] In some embodiments, the drying may be carried out in a pneumatic drying chamber, the length and width of the pneumatic drying chamber are the same as the length and width of the substrate, and the height of the pneumatic drying chamber is 10-100 times the thickness of the substrate.

[0102] In a second aspect, an embodiment of the present application further provides a thin film prepared by the above-mentioned thin film preparation method.

[0103] In some embodiments, the thin film is a hole functional thin film, an electron functional thin film, or a light-emitting thin film.

[0104] The hole functional thin film may include a hole injection layer and / or a hole transport layer, and the electron functional thin film may include an electron transport layer and / or an electron injection layer.

[0105] In a third aspect, please refer to Figure 2 , an embodiment of the present application further provides a method for preparing an optoelectronic device, including the following steps:

[0106] Step S21: Provide a first electrode 10;

[0107] Step S22: Form one or more functional layers 20 on the first electrode 10 by using the above-mentioned thin film preparation method;

[0108] Step S23: Form a second electrode 30 on the functional layer 20 far from the first electrode 10 to obtain an optoelectronic device 100.

[0109] In some embodiments, the functional layer includes one or more of a hole functional layer, a light-emitting layer, and an electron functional layer.

[0110] In some embodiments, the first electrode 10 is an anode. Correspondingly, the functional layer 20 is a hole functional layer, and the second electrode 30 is a cathode. It can be understood that the hole functional layer may include one or both of a hole injection layer and a hole transport layer. In other words, the hole functional layer may be a hole injection layer, or a hole transport layer, or a stacked hole injection layer and hole transport layer.

[0111] In other embodiments, the first electrode 10 is a cathode. Correspondingly, the functional layer 20 is an electron functional layer, and the second electrode 30 is an anode. It can be understood that the electron functional layer may include one or both of an electron injection layer and an electron transport layer. In other words, the electron functional layer may be an electron injection layer, or an electron transport layer, or a stacked electron injection layer and electron transport layer.

[0112] In some embodiments, the preparation methods of the above two optoelectronic devices further include a step of cleaning the first electrode 10 and the second electrode 30. Specifically: ultrasonically clean the first electrode 10 and the second electrode 30 with a cleaning solution for 10 - 20 min, then wash with deionized water and dry, then dry on a hot plate at 100 - 200 °C for 5 - 10 min, and then irradiate with ultraviolet light for 15 - 30 min. In this way, the work function of the bottom electrode can be effectively increased.

[0113] It can be understood that the cleaning solution may be a cleaning solution known in the art for cleaning electrodes, and may be selected from, for example, but not limited to, at least one of acetone and ethanol.

[0114] In some embodiments, a substrate 101 is disposed on one side of the first electrode 10. In other words, the first electrode 10 is located on one surface of the substrate 101. The functional layer 20 is formed on the surface of the first electrode 10 away from the substrate 101.

[0115] It can be understood that the substrate 101 may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may be selected from, for example, but not limited to, at least one of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0116] In some embodiments, the preparation method of the optoelectronic device further includes:

[0117] a step of cleaning the substrate before preparing the hole transport layer liquid film.

[0118] It can be understood that the substrate may be a rigid or flexible substrate.

[0119] In some embodiments, the material of the substrate may be selected from, but not limited to, at least one of glass, silicon wafers, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, and polyethersulfone.

[0120] Fourthly, an optoelectronic device is further provided in an embodiment of the present application, including a first electrode, at least one functional layer, and a second electrode stacked in sequence, wherein at least one of the functional layers is prepared by the method for preparing the thin film as described above.

[0121] In this embodiment, at least one of the functional layers is selected from at least one of a hole functional layer, an electron functional layer, and a light-emitting layer. When the functional layer includes the hole functional layer, the material of the hole functional layer includes at least one of an organic hole functional material and P-type inorganic particles. When the functional layer includes the electron functional layer, the material of the electron functional layer includes an organic electron functional material or N-type inorganic ions. When the functional layer includes the light-emitting layer, the material of the light-emitting layer includes an organic light-emitting material or quantum dots.

[0122] In this embodiment, the first electrode and the second electrode are each independently selected from a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode, or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode of a metal and a metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

[0123] Please refer to Figure 3 , in some embodiments, the optoelectronic device 100 includes a substrate 101, a first electrode 10, a hole functional layer 201, a light-emitting layer 202, an electron functional layer 203, and a second electrode 30 stacked in sequence. The hole functional layer 201 is a hole injection layer or a hole transport layer, and the electron functional layer 203 is an electron injection layer or an electron transport layer.

[0124] Please refer to Figure 4, in some embodiments, the optoelectronic device 100 includes a substrate 101, a first electrode 10, a hole functional layer 201, a light-emitting layer 202, and a second electrode 30, which are stacked in sequence. The hole functional layer 201 includes a hole injection layer 2011 and a hole transport layer 2012 that are stacked in sequence on the first electrode 10.

[0125] Please refer to Figure 5 , in some embodiments, the optoelectronic device 100 includes a substrate 101, a first electrode 10, a hole functional layer 201, a light-emitting layer 202, and a second electrode 30, which are stacked in sequence. The hole functional layer 201 includes an electron injection layer 2013 and an electron transport layer 2014 that are stacked in sequence on the first electrode 10.

[0126] Please refer to Figure 6 , in some embodiments, the optoelectronic device 100 includes a substrate 101, a first electrode 10, a hole functional layer 201, a light-emitting layer 202, an electron functional layer 203, and a second electrode 30, which are stacked in sequence. The hole functional layer 201 is a hole injection layer 2011 and a hole transport layer 2012 that are stacked in sequence on the first electrode 10, and the electron functional layer 203 is an electron transport layer 2013 and an electron injection layer 2014 that are stacked in sequence on the light-emitting layer 202.

[0127] The substrate 101, the first electrode 10, the hole functional layer 201, the light-emitting layer 202, the second electrode 30, and the electron functional layer 203 are as described above and will not be elaborated here.

[0128] In a fifth aspect, the present application further relates to a display device, which includes the optoelectronic device prepared by the preparation method of the optoelectronic device or the optoelectronic device 100.

[0129] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television, or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0130] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0131] Preparation of thin film

[0132] Thin film Example 1

[0133] 1. Disperse the functional material PEDOT:PSS into an aqueous solvent to form an organic hole injection functional dispersion with a concentration of 30 mg / ml;

[0134] 2. Form a liquid film of the organic hole injection functional dispersion on a substrate, transfer the substrate to a gas flow drying chamber, and dry it for 2 h at a temperature of 120 °C and a gas flow rate of 0.5 m / s to obtain an organic hole injection thin film with a thickness of 50 nm. Among them, the drying carrier gas is N2, and 2% by volume of the active substance H2S is added to the drying carrier gas.

[0135] Film Example 2

[0136] This film example is basically the same as Film Example 1, except that in this film example, the solvent is replaced from water with DMSO, the drying temperature is 210 °C, and the gas flow rate is 5 m / s.

[0137] Film Example 3

[0138] This film example is basically the same as Film Example 1, except that in this film example, the solvent is replaced from water with DMF, the drying temperature is 170 °C, and the gas flow rate is 9.5 m / s.

[0139] Film Example 4

[0140] 1. Disperse the functional material NiO into an ethylene glycol solvent to form an inorganic hole injection functional dispersion with a concentration of 30 mg / ml;

[0141] 2. Form a liquid film of the inorganic hole injection functional dispersion on a substrate, transfer the substrate to a gas flow drying chamber, and dry it for 2 h at a temperature of 220 °C and a gas flow rate of 0.5 m / s to obtain an inorganic hole injection thin film with a thickness of 50 nm. Among them, the drying carrier gas is N2, and 2% by volume of the active substance ether is added to the drying carrier gas.

[0142] Film Example 5

[0143] This film example is basically the same as Film Example 4, except that in this film example, the solvent is replaced from ethylene glycol with cyclohexanol, the drying temperature is 180 °C, the gas flow rate is 0.5 m / s, and 5% by volume of the active substance ether is added to the drying carrier gas.

[0144] Film Example 6

[0145] This film example is basically the same as Film Example 4, except that in this film example, the solvent is replaced from ethylene glycol with n-pentanol, the drying temperature is 150 °C, the gas flow rate is 0.5 m / s, and 5% by volume of the active substance ether is added to the drying carrier gas.

[0146] Thin Film Example 7

[0147] 1. Disperse the functional material TFB into chlorobenzene solvent to form an organic hole-transporting functional dispersion with a concentration of 20 mg / ml;

[0148] 2. Form a liquid film of the organic hole-transporting functional dispersion on a substrate, transfer the substrate to an air-flow drying chamber, and dry it for 2 h at a temperature of 150 °C and a gas flow rate of 0.5 m / s to obtain an organic hole-transporting thin film with a thickness of 20 nm. Among them, the drying carrier gas is Ar, and an active substance HCl with a volume fraction of 2% is added to the drying carrier gas.

[0149] Thin Film Example 8

[0150] This thin film example is basically the same as Thin Film Example 7, except that in this thin film example, the solvent is replaced from chlorobenzene with bromobenzene, the drying temperature is 180 °C, and the gas flow rate is 5 m / s.

[0151] Thin Film Example 9

[0152] This thin film example is basically the same as Thin Film Example 7, except that in this thin film example, the solvent is replaced from chlorobenzene with o-dichlorobenzene, the drying temperature is 200 °C, and the gas flow rate is 9.5 m / s.

[0153] Thin Film Example 10

[0154] 1. Disperse the functional material CuSCN into DMSO solvent to form an inorganic hole-transporting functional dispersion with a concentration of 30 mg / ml;

[0155] 2. Form a liquid film of the inorganic hole-transporting functional dispersion on a substrate, transfer the substrate to an air-flow drying chamber, and dry it for 2 h at a temperature of 210 °C and a gas flow rate of 0.5 m / s to obtain an inorganic hole-transporting thin film with a thickness of 20 nm. Among them, the drying carrier gas is Ar, and an active substance ethanolamine with a volume fraction of 2% is added to the drying carrier gas.

[0156] Thin Film Example 11

[0157] This thin film example is basically the same as Thin Film Example 10, except that in this thin film example, the solvent is replaced from DMSO with DMF, the drying temperature is 170 °C, and the gas flow rate is 0.5 m / s.

[0158] Thin Film Example 12

[0159] This thin film example is basically the same as Thin Film Example 10, except that in this thin film example, the solvent is replaced from DMSO with benzofuran, the drying temperature is 190 °C, and the gas flow rate is 0.5 m / s.

[0160] Thin Film Example 13

[0161] 1. Disperse the functional material TPBI into xylene solvent to form an organic electron transport functional dispersion with a concentration of 30 mg / ml;

[0162] 2. Form a liquid film of the organic electron transport functional dispersion on a substrate, transfer the substrate to an air flow drying chamber, and dry for 2 h at a temperature of 160 °C and a gas flow rate of 0.5 m / s to obtain an organic electron transport thin film with a thickness of 40 nm. Among them, the drying carrier gas is Ne, and 2% by volume of the active substance ethylamine is added to the drying carrier gas.

[0163] Thin Film Example 14

[0164] This thin film example is basically the same as Thin Film Example 13, except that in this thin film example, the solvent is replaced from xylene with ethylbenzene, the drying temperature is 150 °C, and the gas flow rate is 5 m / s.

[0165] Thin Film Example 15

[0166] This thin film example is basically the same as Thin Film Example 13, except that in this thin film example, the solvent is replaced from xylene with chlorobenzene, the drying temperature is 150 °C, and the gas flow rate is 9.5 m / s.

[0167] Thin Film Example 16

[0168] 1. Disperse the functional material ZnO into benzyl alcohol solvent to form an inorganic electron transport functional dispersion with a concentration of 30 mg / ml;

[0169] 2. Form a liquid film of the inorganic electron transport functional dispersion on a substrate, transfer the substrate to an air flow drying chamber, and dry for 2 h at a temperature of 160 °C and a gas flow rate of 0.5 m / s to obtain an inorganic electron transport thin film with a thickness of 40 nm. Among them, the drying carrier gas is Ne, and 2% by volume of the active substance ethylamine is added to the drying carrier gas.

[0170] Thin Film Example 17

[0171] This thin film example is basically the same as Thin Film Example 16, except that in this thin film example, the solvent is replaced from benzyl alcohol with p-ethylbenzyl alcohol, the drying temperature is 150 °C, and the gas flow rate is 5 m / s.

[0172] Thin Film Example 18

[0173] This thin film example is basically the same as Thin Film Example 16, except that in this thin film example, the solvent is replaced from benzyl alcohol with 4-chlorobenzyl alcohol, the drying temperature is 150 °C, and the gas flow rate is 9.5 m / s.

[0174] Thin Film Example 19

[0175] 1. Disperse the functional material lithium 8 - hydroxyquinoline into ethylene glycol solvent to form an organic electron - injection functional dispersion with a concentration of 30 mg / ml;

[0176] 2. Form a liquid film of the organic electron - injection functional dispersion on a substrate, transfer the substrate to an air - flow drying chamber, and dry for 2 h at a temperature of 220 °C and a gas flow rate of 0.5 m / s to obtain an organic electron - injection thin film with a thickness of 40 nm. Among them, the drying carrier gas is Ne, and 2% (by volume) of the active substance ethylamine is added to the drying carrier gas.

[0177] Thin - film Example 20

[0178] This thin - film example is basically the same as Thin - film Example 19, except that in this thin - film example, the solvent is replaced from ethylene glycol with cyclohexanol, the drying temperature is 180 °C, and the gas flow rate is 5 m / s.

[0179] Thin - film Example 21

[0180] This thin - film example is basically the same as Thin - film Example 19, except that in this thin - film example, the solvent is replaced from ethylene glycol with n - pentanol, the drying temperature is 150 °C, and the gas flow rate is 9.5 m / s.

[0181] Thin - film Example 22

[0182] 1. Disperse the functional material NaF into ethylene glycol solvent to form an inorganic electron - injection functional dispersion with a concentration of 30 mg / ml;

[0183] 2. Form a liquid film of the inorganic electron - injection functional dispersion on a substrate, transfer the substrate to an air - flow drying chamber, and dry for 2 h at a temperature of 220 °C and a gas flow rate of 0.5 m / s to obtain an inorganic electron - injection thin film with a thickness of 40 nm. Among them, the drying carrier gas is Ne, and 2% (by volume) of the active substance ethylamine is added to the drying carrier gas.

[0184] Thin - film Example 23

[0185] This thin - film example is basically the same as Thin - film Example 22, except that in this thin - film example, the solvent is replaced from ethylene glycol with cyclohexanol, the drying temperature is 180 °C, and the gas flow rate is 5 m / s.

[0186] Thin - film Example 24

[0187] This thin - film example is basically the same as Thin - film Example 22, except that in this thin - film example, the solvent is replaced from ethylene glycol with n - pentanol, the drying temperature is 150 °C, and the gas flow rate is 9.5 m / s.

[0188] Thin - film Example 25

[0189] 1. Disperse the functional material tetraphenylporphyrin (TPP) into chlorobenzene solvent to form an organic light-emitting functional dispersion with a concentration of 20 mg / ml;

[0190] 2. Form a liquid film of the organic light-emitting functional dispersion on a substrate, transfer the substrate to an air-flow drying chamber, and dry for 2 h at a temperature of 150 °C and a gas flow rate of 0.5 m / s to obtain an organic light-emitting thin film with a thickness of 20 nm. Among them, the drying carrier gas is N2, and an active substance HCl with a volume fraction of 2% is added to the drying carrier gas.

[0191] Thin film Example 26

[0192] This thin film example is basically the same as Thin film Example 25, except that in this thin film example, the solvent is replaced from chlorobenzene with bromobenzene, the drying temperature is 180 °C, and the gas flow rate is 5 m / s.

[0193] Thin film Example 27

[0194] This thin film example is basically the same as Thin film Example 25, except that in this thin film example, the solvent is replaced from chlorobenzene with o-diphenyl, the drying temperature is 200 °C, and the gas flow rate is 9.5 m / s.

[0195] Thin film Example 28

[0196] 1. Disperse the functional material Cdse / ZnSe into decane solvent to form an inorganic light-emitting functional dispersion with a concentration of 30 mg / ml;

[0197] 2. Form a liquid film of the inorganic light-emitting functional dispersion on a substrate, transfer the substrate to an air-flow drying chamber, and dry for 2 h at a temperature of 190 °C and a gas flow rate of 0.5 m / s to obtain an inorganic light-emitting thin film with a thickness of 30 nm. Among them, the drying carrier gas is N2, and an active substance octanethiol with a volume fraction of 2% is added to the drying carrier gas.

[0198] Thin film Example 29

[0199] This thin film example is basically the same as Thin film Example 28, except that in this thin film example, the solvent is replaced from decane with propylcyclohexane, the drying temperature is 170 °C, and the gas flow rate is 5 m / s.

[0200] Thin film Example 30

[0201] This thin film example is basically the same as Thin film Example 28, except that in this thin film example, the solvent is replaced from decane with ethylbenzene, the drying temperature is 150 °C, and the gas flow rate is 9.5 m / s.

[0202] Thin film Comparative Example 1

[0203] This thin film example is basically the same as Thin Film Example 1, except that no active substance is added to the drying carrier gas in this thin film example.

[0204] Thin Film Comparative Example 2

[0205] This thin film example is basically the same as Thin Film Example 4, except that no active substance is added to the drying carrier gas in this thin film example.

[0206] Thin Film Comparative Example 3

[0207] This thin film example is basically the same as Thin Film Example 7, except that no active substance is added to the drying carrier gas in this thin film example.

[0208] Thin Film Comparative Example 4

[0209] This thin film example is basically the same as Thin Film Example 10, except that no active substance is added to the drying carrier gas in this thin film example.

[0210] Thin Film Comparative Example 5

[0211] This thin film example is basically the same as Thin Film Example 13, except that no active substance is added to the drying carrier gas in this thin film example.

[0212] Thin Film Comparative Example 6

[0213] This thin film example is basically the same as Thin Film Example 16, except that no active substance is added to the drying carrier gas in this thin film example.

[0214] Thin Film Comparative Example 7

[0215] This thin film example is basically the same as Thin Film Example 19, except that no active substance is added to the drying carrier gas in this thin film example.

[0216] Thin Film Comparative Example 8

[0217] This thin film example is basically the same as Thin Film Example 22, except that no active substance is added to the drying carrier gas in this thin film example.

[0218] Thin Film Comparative Example 9

[0219] This thin film example is basically the same as Thin Film Example 25, except that no active substance is added to the drying carrier gas in this thin film example.

[0220] Thin Film Comparative Example 10

[0221] This thin film example is basically the same as Thin Film Example 28, except that no active substance is added to the drying carrier gas in this thin film example.

[0222] Thin Film Comparative Example 11

[0223] 1. Disperse the functional material PEDOT:PSS into an aqueous solvent to form an organic hole injection functional dispersion with a concentration of 30 mg / ml;

[0224] 2. Form a liquid film of the organic hole injection functional dispersion on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25°C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an organic hole injection thin film with a thickness of 50 nm.

[0225] Thin Film Comparative Example 12

[0226] 1. Disperse the functional material NiO into an ethylene glycol solvent to form an inorganic hole injection functional dispersion with a concentration of 30 mg / ml;

[0227] 2. Form a liquid film of the inorganic hole injection functional dispersion on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25°C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an inorganic hole injection thin film with a thickness of 50 nm.

[0228] Thin Film Comparative Example 13

[0229] 1. Disperse the functional material TFB into a chlorobenzene solvent to form an organic hole transport functional dispersion with a concentration of 20 mg / ml;

[0230] 2. Form a liquid film of the organic hole transport functional dispersion on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25°C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an organic hole transport thin film with a thickness of 20 nm.

[0231] Thin Film Comparative Example 14

[0232] 1. Disperse the functional material CuSCN into a DMSO solvent to form an inorganic hole transport functional dispersion with a concentration of 30 mg / ml;

[0233] 2. Form a liquid film of the inorganic hole transport functional dispersion on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25°C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an inorganic hole transport thin film with a thickness of 20 nm.

[0234] Thin Film Comparative Example 15

[0235] 1. Disperse the functional material TPBI into a xylene solvent to form an organic electron transport functional dispersion with a concentration of 30 mg / ml;

[0236] 2. Form a liquid film of the organic electron transport functional dispersion liquid on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an organic electron transport thin film with a thickness of 40 nm.

[0237] Film Comparative Example 15

[0238] 1. Disperse the functional material ZnO into benzyl alcohol solvent to form an inorganic electron transport functional dispersion liquid with a concentration of 30 mg / ml;

[0239] 2. Form a liquid film of the inorganic electron transport functional dispersion liquid on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an inorganic electron transport thin film with a thickness of 40 nm.

[0240] Film Comparative Example 16

[0241] 1. Disperse the functional material NaF into ethylene glycol solvent to form an organic electron injection functional dispersion liquid with a concentration of 30 mg / ml;

[0242] 2. Form a liquid film of the organic electron injection functional dispersion liquid on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an organic electron injection thin film with a thickness of 40 nm.

[0243] Film Comparative Example 18

[0244] 1. Disperse the functional material ZnO into ethylene glycol solvent to form an inorganic electron injection functional dispersion liquid with a concentration of 30 mg / ml;

[0245] 2. Form a liquid film of the inorganic electron injection functional dispersion liquid on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an inorganic electron injection thin film with a thickness of 40 nm.

[0246] Film Comparative Example 19

[0247] 1. Disperse the functional material tetraphenylporphyrin (TPP) into chlorobenzene solvent to form an organic light-emitting functional dispersion liquid with a concentration of 20 mg / ml;

[0248] 2. Form a liquid film of the organic light-emitting functional dispersion liquid on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 25 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an organic light-emitting thin film with a thickness of 40 nm.

[0249] Thin film comparative example 20

[0250] 1. Disperse the functional material Cdse / ZnSe into the decane solvent to form an inorganic light-emitting functional dispersion with a concentration of 30 mg / ml;

[0251] 2. Form a liquid film of the inorganic light-emitting functional dispersion on a substrate, transfer the substrate to a vacuum drying chamber, and dry it at a temperature of 10 -2 °C and a vacuum degree of 10 -2 bar for 0.5 h to obtain an inorganic light-emitting thin film with a thickness of 30 nm.

[0252] Fabrication of the device

[0253] Device Example 1

[0254] For other layers of Device Example 1, they are all prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Thin Film Example 1.

[0255] Device Example 2

[0256] For other layers of Device Example 2, they are all prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Thin Film Example 2.

[0257] Device Example 3

[0258] For other layers of Device Example 3, they are all prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Thin Film Example 3.

[0259] Device Example 4

[0260] For other layers of Device Example 4, they are all prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Thin Film Example 4.

[0261] Device Example 5

[0262] For other layers of Device Example 5, they are all prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Thin Film Example 5.

[0263] Device Example 6

[0264] For other layers of Device Example 6, they are all prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Thin Film Example 6.

[0265] Device Example 7

[0266] For other layers of Device Example 7, they are all prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Thin Film Example 7.

[0267] Device Example 8

[0268] For Device Example 8, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 8.

[0269] Device Example 9

[0270] For Device Example 9, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 9.

[0271] Device Example 10

[0272] For Device Example 10, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 10.

[0273] Device Example 11

[0274] For Device Example 11, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 11.

[0275] Device Example 12

[0276] For Device Example 12, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 12.

[0277] Device Example 13

[0278] For Device Example 13, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 13.

[0279] Device Example 14

[0280] For Device Example 14, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 14.

[0281] Device Example 15

[0282] For Device Example 15, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 15.

[0283] Device Example 16

[0284] For Device Example 16, other layers are prepared by conventional methods, but the inorganic electron transport layer is prepared by the preparation method of Film Example 16.

[0285] Device Example 17

[0286] For Device Example 17, other layers are prepared by conventional methods, but the inorganic electron transport layer is prepared by the preparation method of Film Example 17.

[0287] Device Example 18

[0288] For Device Example 18, other layers are prepared by conventional methods, but the inorganic electron transport layer is prepared by the preparation method of Film Example 18.

[0289] Device Example 19

[0290] For Device Example 19, other layers are prepared by conventional methods, but the organic electron injection layer is prepared by the preparation method of Film Example 19.

[0291] Device Example 20

[0292] For Device Example 20, other layers are prepared by conventional methods, but the organic electron injection layer is prepared by the preparation method of Film Example 20.

[0293] Device Example 21

[0294] For Device Example 21, other layers are prepared by conventional methods, but the organic electron injection layer is prepared by the preparation method of Film Example 20.

[0295] Device Example 22

[0296] For Device Example 22, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 22.

[0297] Device Example 23

[0298] For Device Example 23, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 23.

[0299] Device Example 24

[0300] For Device Example 24, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 24.

[0301] Device Example 25

[0302] For Device Example 25, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 25.

[0303] Device Example 26

[0304] For Device Example 26, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 26.

[0305] Device Example 27

[0306] For Device Example 27, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 27.

[0307] Device Example 28

[0308] For Device Example 28, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 28.

[0309] Device Example 29

[0310] For Device Example 29, other layers are prepared by conventional methods, but the organic hole injection layer is prepared by the preparation method of Film Example 29.

[0311] Device Example 30

[0312] For Device Example 30, other layers are prepared by conventional methods, but the inorganic hole injection layer is prepared by the preparation method of Film Example 30.

[0313] Device Example 31

[0314] For Device Example 31, other layers are prepared by conventional methods, but the organic electron transport thin film is prepared by the preparation method of Film Example 13, the inorganic electron injection thin film is prepared by the preparation method of Film Example 22, and the inorganic light-emitting thin film is prepared by the preparation method of Example 28.

[0315] Device Example 32

[0316] For Device Example 32, other layers are prepared by conventional methods, but the organic electron transport thin film is prepared by the preparation method of Film Example 14, the inorganic electron injection thin film is prepared by the preparation method of Film Example 23, and the inorganic light-emitting thin film is prepared by the preparation method of Example 29.

[0317] Device Example 33

[0318] For Device Example 33, other layers are prepared by conventional methods, but the organic electron transport thin film is prepared by the preparation method of Film Example 15, the inorganic electron injection thin film is prepared by the preparation method of Film Example 24, and the inorganic light-emitting thin film is prepared by the preparation method of Example 30.

[0319] Device Comparative Example

[0320] The film layers of the Device Comparative Example are prepared by the preparation methods of Film Comparative Examples 11 to 20.

[0321] Table 1

[0322]

[0323]

[0324]

[0325] The roughness of the films obtained from Film Examples 1-30 and Film Comparative Examples 1-20 was measured, and the results are recorded in Table 1.

[0326] As can be seen from Table 1, the surface roughness of the films prepared from Film Examples 1-30 is much lower than that of the films prepared from Film Comparative Examples 1-20. The lower the roughness of the film, the better the film-forming quality and the corresponding better uniformity. In addition, from the fact that the surface roughness of the films prepared from Film Comparative Examples 1-10 is lower than that of the films prepared from Film Comparative Examples 11-20, it can be seen that air drying can improve the film-forming quality of the film compared with vacuum drying.

[0327] The device EQE and device lifetime data of Device Examples 1-33 and Comparative Examples were tested, and the device manufacturing cost was estimated. The results are recorded in Table 2. The specific test process is as follows:

[0328] An efficiency test system was built by controlling a QE PRO spectrometer, a Keithley 2400, and a Keithley 6485 through LabView. The external quantum dot efficiency was obtained by calculation. The external quantum efficiency of the device was calculated by the following formula, that is

[0329]

[0330] where f is the correction coefficient, which is 0.1932; R(λ) is the silicon photoresponse function; S(λ) is the spectrometer normalization function; Is is the photocurrent; and Io is the device current.

[0331] Test steps:

[0332] 1. Place the device in the test box of the test system;

[0333] 2. Set parameters: input the device emission area, test step size, and test range into the system;

[0334] 3. Start the test to obtain the EQE vs. voltage curve;

[0335] Lifetime test method:

[0336] a) Place the device in a lifetime tester, set the current density of the device to 2 mA / cm 2 and measure the brightness of the device;

[0337] b) Perform the lifetime test using the lifetime test system. The light intensity of the lifetime test system is collected by a silicon photodiode, the device is powered by a Keithley 3706A, and the test software controls the start of the test. The test time interval is 1 min;

[0338] c) Read the maximum brightness Lmax and the measured device lifetime value τ50@Lmax from the lifetime curve, substitute them into the lifetime acceleration test formula, and calculate τ95@L1000int.

[0339] Table 2

[0340]

[0341]

[0342] Among them, when comparing the preparation costs of the device example and the device comparative example, the preparation cost of the film layer of the comparative example is taken as 100 as the benchmark for comparison.

[0343] Please refer to Table 1 and it can be seen that:

[0344] Compared with the device comparative example, Device Examples 1 to 33 all have higher device EQE and T95@1000nit, and lower device preparation costs. In addition, referring to Device Examples 1-3, 7-9, 10-12 and the device comparative example, it can be seen that the air flow temperature, gas flow rate and solvent type have no obvious influence on the EQE, T95@1000nit and preparation cost of the optoelectronic device.

[0345] Referring to Device Examples 4-6 and the device comparative example, Device Examples 13-15 and the device comparative example, and Device Examples 31-33 and the device comparative example, it can be seen that as the addition amount (1%-10%) of the active substance in the drying gas increases, both the EQE and T95@1000nit of the device increase. This shows that by adding the active substance during the drying process in this application, it helps to improve the EQE of the device, enhance its stability, and extend its life. This may be because the active substance reacts with the active sites in the film layer, modifies the film layer, and improves the damage to the film layer during the drying process, thereby improving the performance and life of the optoelectronic device.

[0346] It can be seen from the comparison between Device Examples 13-15, 22-25, 25-27, 28-30 and Device Comparative Examples that when the device is an electron injection thin film or a light-emitting thin film, adding an active substance to the dry gas can greatly improve the EQE and lifespan of the device. In addition, it can be seen from the comparison between Device Examples 22-25, 28-30 and Device Comparative Examples that when the device is an inorganic electron injection thin film or an inorganic light-emitting thin film, adding an active substance to the dry gas can maximally improve the EQE, T95@1000nit of the device and reduce the manufacturing cost of the device (the reduction range of the manufacturing cost can reach 40%-50%). This may be because these two types of film layers are more easily damaged in the high-vacuum VD drying process, thus affecting their luminous efficiency and lifespan.

[0347] The above has introduced in detail the thin film, its preparation method, optoelectronic device and display device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A method for preparing a thin film, characterized in that, It includes the following steps: Provide a functional material dispersion liquid, wherein the functional material dispersion liquid includes a functional material and a solvent; Deposit the functional material dispersion liquid to form a liquid film; Dry the liquid film by using an air flow to obtain a thin film, wherein the temperature of the air flow is greater than or equal to the boiling point of the solvent.

2. The preparation method according to claim 1, wherein The difference between the temperature of the air flow and the boiling point of the solvent is 0 to 50 °C; The air flow includes an inert gas, and the inert gas is selected from one or more of N2, He, Ne, Ar, Kr, Xe; and / or The volume fraction of the inert gas in the air flow is 50-99%; and / or The flow rate of the air flow is 0.1 m / s - 10 m / s.

3. The preparation method according to claim 1 or 2, characterized in that, The air flow further includes an active substance, and the active substance is selected from one or more of R1-SH and its derivatives, R2-OH and its derivatives, wherein R1 and R2 are independently selected from C1-C10 organic groups.

4. The preparation method according to claim 3, characterized in that, The C1-C10 organic group is selected from one or more of C1-C10 alkyl, C1-C10 alkenyl, C1-C10 alkynyl, C1-C10 alkoxy, C1-C10 cycloalkane group, C1-C10 carbonyl group.

5. The preparation method according to claim 4, characterized in that, The R1-SH and its derivatives are selected from one or more of C1-C10 mercaptans, C1-C10 thioethers, and the R2-OH and its derivatives are selected from one or more of phenol, cresol, hydroquinone, anisole; and / or The temperature of the air flow is greater than or equal to the boiling point of the active substance.

6. The preparation method according to claim 5, wherein The mercaptan is selected from one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, 1,3-propanedithiol; and / or The thioether is selected from one or more of dithioether, ethyl thioether, ethylene dithiol, octyl thioether; and / or In the air flow, the volume fraction of the active substance is 1% - 10%.

7. The preparation method according to claim 1, characterized in that, The functional material is an organic functional material or an inorganic functional material, wherein the organic functional material includes an organic P-type semiconductor material, an organic N-type semiconductor material, and an organic light-emitting material; the inorganic functional material includes P-type inorganic particles, N-type inorganic particles, and quantum dots.

8. The preparation method according to claim 7, wherein The organic P-type semiconductor material is selected from one or more of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexyldi[N,N-bis(4-methylphenyl)aniline], N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)], poly(9-vinylcarbazole), poly(triphenylamine), 4,4',4''-tris(carbazol-9-yl)triphenylamine, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, and copper phthalocyanine; and / or, The P-type inorganic particles include one or more of first doped metal oxide particles, first undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the first doped metal oxide particles and the metal oxides in the first undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5. The doping elements in the first doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS3, WS3. The metal selenides include one or more of MoSe3, WSe3. The metal nitrides include one or more of P-type gallium nitride, MoS2, MoS3, MoSe2, MoSe3, and WS3; and / or, The organic N-type semiconductor material is selected from one or more of aromatic heterocycles such as oxadiazole, quinoline, benzothiazole, benzoxazole, quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, and hydroxyquinoline compounds; and / or, The N-type inorganic particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the second undoped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5. The metal oxides in the second doped metal oxide particles include one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3. The doping elements in the second doped metal oxide particles include one or several of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; and / or, The organic light-emitting material is selected from one or more of CBP:Ir(mppy)3 (4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III)]), TCTX:Ir(mmpy) (4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium]), diaryl anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, blue-light-emitting TBPe fluorescent material, green-light-emitting TTPX fluorescent material, orange-light-emitting TBRb fluorescent material, red-light-emitting DBP fluorescent material, delayed fluorescence material, TTA material, TADF material, polymer containing B-N covalent bond, HLCT material, Exciplex light-emitting material; and / or, The quantum dots are selected from one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials; the materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots are respectively selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots includes one or more layers. Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb;The I-III-VI group compound is selected from one or more of CuInS2, CuInSe2, and AgInS2, and the quantum dots with a core-shell structure are selected from one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + ion, M is a divalent metal cation, including Pb 2+ 、Sn 2+ 、Cu 2+ 、Ni 2+ 、Cd 2+ 、Cr 2+ 、Mn 2+ 、Co 2+ 、Fe 2+ 、Ge 2+ 、Yb 2+ 、Eu 2+ one or more of them, and X is a halogen anion, including Cl - 、Br - 、I - one or more of them; and / or, The structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, where B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ , Sn 2+ , Cu 2+ , Ni 2 + , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ and one or more of them, X is a halogen anion, including Cl - , Br - , I - and one or more of them.

9. The preparation method according to claim 1, wherein, In the functional material dispersion liquid, the concentration range of the functional material is 5-60 mg / ml; and / or, The solvent is selected from one or more of water, DMSO, DMF, ethylene glycol, cyclohexanol, n-pentanol, chlorobenzene, bromobenzene, phosphonodibromobenzene, benzofuran, xylene, ethylbenzene, ethanol, o-didecylbenzene, propylcyclohexane, n-hexane, n-octane, cyclohexane.

10. The preparation method according to claim 7, wherein, When the functional material in the thin film is an inorganic functional material, a ligand is further connected to the surface of the inorganic functional material, and the ligand includes one or more of alkylamines, thiols, and organic acids; the alkylamines are selected from one or more of methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, n-propylamine, and n-butylamine, the thiols are selected from one or more of octanethiol, dithiol, ethanethiol, ethylene dithiol, 1-propanethiol, and 1,3-propanedithiol, and the organic acids are selected from one or more of tartaric acid, oxalic acid, malic acid, citric acid, ascorbic acid, benzoic acid, salicylic acid, and caffeic acid.

11. A thin film, characterized in that, The thin film is prepared by the preparation method of the thin film according to any one of claims 1-10.

12. A method for preparing an optoelectronic device, characterized in that, It includes the following steps: Provide a first electrode; Form one or more functional layers on the first electrode by using the preparation method of the thin film according to any one of claims 1-10; Form a second electrode on the functional layer far from the first electrode to obtain an optoelectronic device.

13. An optoelectronic device, characterized in that, It includes a first electrode, at least one functional layer, and a second electrode that are sequentially stacked, wherein at least one of the functional layers includes a thin film prepared by the preparation method of the thin film according to any one of claims 1-10 or the thin film according to claim 11.

14. The optoelectronic device according to claim 13, wherein At least one of the functional layers is selected from at least one of a hole functional layer, an electron functional layer, and a light-emitting layer. When the functional layer includes the hole functional layer, the material of the hole functional layer includes at least one of an organic hole functional material and P-type inorganic particles. When the functional layer includes the electron functional layer, the material of the electron functional layer includes an organic electron functional material or N-type inorganic ions. When the functional layer includes the light-emitting layer, the material of the light-emitting layer includes an organic light-emitting material or quantum dots.

15. The optoelectronic device according to claim 13, characterized in that, The first electrode and the second electrode are each independently selected from a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode, or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, and aluminum-doped magnesium oxide. The composite electrode of a metal and a metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg, and Ba.

16. A display device, characterized in that, The display device includes an optoelectronic device prepared by the preparation method of the optoelectronic device according to claim 12 or includes the optoelectronic device according to claims 13-15.

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