Display substrate, manufacturing method thereof and display device

Abstract

The invention provides a display substrate, a manufacturing method thereof and a display device.The display substrate comprises a substrate, the substrate comprises a first surface and a second surface which are oppositely arranged, the first surface is provided with latticed first grooves, the second surface is provided with a plurality of second grooves arranged in an array mode, the first grooves surround the second grooves, and the second grooves are arranged in the first grooves; the orthographic projection of the first groove on the substrate is not overlapped with the orthographic projection of each second groove on the substrate; the light-emitting units are arranged on the first surface in an array mode, each light-emitting unit comprises a first electrode, an epitaxial layer and a second electrode which are sequentially arranged away from the substrate, and the light-emitting units and the second grooves are arranged in a one-to-one correspondence mode; the anti-crosstalk layer at least covers the side wall and the bottom of the first groove; the color conversion units correspond to the second grooves in a one-to-one mode, and all the color conversion units are contained in the corresponding second grooves.

Description

Display substrate, manufacturing method thereof, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate, a manufacturing method thereof, and a display device. Background Art

[0002] Micro LEDs (Micro Light-Emitting Diodes) are micron-sized light-emitting diodes. Due to their small size, Micro LEDs can be used as pixels on display panels. Display panels made with Micro LEDs are called Micro LED display panels. Micro LED technology shrinks the size of existing LEDs to less than 100 microns, approximately 1% of the size of existing LEDs. Mass transfer technology is then used to transfer these micron-sized Micro / mini-LEDs to a driver substrate, creating Micro LED displays of various sizes.

[0003] Micro-scale LED chips, using a chip-on-chip structure, can effectively reduce the price of each chip, but this increases processing difficulty. Furthermore, wafer-level chip processing costs are significantly higher than those of glass-based flat panel display (FPD) production lines. Therefore, developing LED processing on glass substrates has become a solution to reduce Micro LED chip costs. Consequently, achieving full-color Micro LED displays has become a pressing issue for future Micro LED display applications.

[0004] Summary of the Invention

[0005] The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The specific solutions are as follows:

[0006] An embodiment of the present disclosure provides a display substrate, comprising:

[0007] A substrate comprising a first surface and a second surface disposed opposite to each other, wherein the first surface has a grid of first grooves, and the second surface has a plurality of second grooves arranged in an array, wherein the first grooves surround each of the second grooves, and an orthographic projection of the first groove on the substrate does not overlap with an orthographic projection of each of the second grooves on the substrate;

[0008] a plurality of light-emitting units arranged in an array on the first surface, each of the light-emitting units comprising a first electrode, an epitaxial layer, and a second electrode sequentially disposed away from the substrate, the plurality of light-emitting units being disposed in a one-to-one correspondence with the plurality of second grooves, and an orthographic projection of each light-emitting unit on the substrate overlapping with an orthographic projection of a corresponding second groove on the substrate, and not overlapping with an orthographic projection of the first groove on the substrate;

[0009] an anti-crosstalk layer, covering at least the sidewalls and the bottom of the first groove;

[0010] A plurality of color conversion units are arranged in a one-to-one correspondence with the plurality of second grooves, and each of the color conversion units is accommodated in a corresponding second groove.

[0011] Optionally, in the embodiment of the present disclosure, the anti-crosstalk layer extends to the adjacent light-emitting units and is electrically connected to the corresponding first electrodes, and each of the first electrodes is electrically connected through the anti-crosstalk layer.

[0012] Optionally, in the embodiment of the present disclosure, a reflective structure is further provided around the side walls of each of the epitaxial layers.

[0013] Optionally, in the embodiment of the present disclosure, a first insulating layer is further included between the reflective structure and the anti-crosstalk layer, and the reflective structure is electrically connected to the second electrode.

[0014] Optionally, in the embodiment of the present disclosure, a second insulating layer is further included between the reflective structure and the side wall of the corresponding epitaxial layer, the reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other.

[0015] Optionally, in the embodiment of the present disclosure, a light shielding portion is further included that is at least partially located on the second surface, and the light shielding portion surrounds each of the color conversion units.

[0016] Optionally, in an embodiment of the present disclosure, the light shielding portion is located on the second surface, and the light shielding portion and the anti-crosstalk layer are spaced apart.

[0017] Optionally, in an embodiment of the present disclosure, the second surface further has a third groove, the third groove is arranged to penetrate the first groove, and the part of the light shielding portion located in the third groove is in direct contact with the anti-crosstalk layer.

[0018] Optionally, in the embodiment of the present disclosure, a plurality of color resists are arrayed on the second surface, and the orthographic projection of each color resist on the substrate coincides with the orthographic projection of the corresponding color conversion unit on the substrate.

[0019] Optionally, in the embodiment of the present disclosure, along the thickness direction of the substrate, the depth of the first groove is greater than or equal to the thickness of each color conversion unit, and the thickness of each color conversion unit is less than the depth of the corresponding second groove.

[0020] Optionally, in the embodiment of the present disclosure, a portion of the anti-crosstalk layer located at the bottom of the first groove is located away from the plurality of light-emitting units and is flush with a side of the plurality of color conversion units that is away from the plurality of light-emitting units.

[0021] Optionally, in the embodiment of the present disclosure, the orthographic projection of the epitaxial layer on the substrate completely falls within the region of the orthographic projection of the corresponding color conversion unit on the substrate.

[0022] Optionally, in an embodiment of the present disclosure, the multiple light-emitting units include a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit; the color conversion unit includes a red quantum dot material corresponding to the red light-emitting unit, a green quantum dot material corresponding to the green light-emitting unit, and a light scattering structure corresponding to the blue light-emitting unit.

[0023] Optionally, in the embodiment of the present disclosure, the color conversion unit includes white light phosphors corresponding to each of the light-emitting units.

[0024] Optionally, in the embodiment of the present disclosure, the cross-sectional shape of each of the light-emitting units along a direction parallel to the plane where the substrate is located is one of circular and square.

[0025] Accordingly, an embodiment of the present disclosure provides a display device, including:

[0026] A display substrate as described in any one of the above items, and a driving backplane electrically connected to the display substrate.

[0027] Accordingly, an embodiment of the present disclosure provides a method for manufacturing a display substrate, comprising:

[0028] Transferring the epitaxial wafer to a carrier substrate and removing the substrate base material of the epitaxial wafer;

[0029] performing a thinning process on a side of the remaining film layer of the epitaxial wafer facing away from the intermediate substrate to obtain a processed structure;

[0030] depositing a transparent conductive layer on the treated structure to obtain a deposited substrate;

[0031] transferring the deposited substrate onto a rigid substrate through a substrate;

[0032] removing the intermediate substrate;

[0033] Performing patterning on the deposited substrate to form a plurality of light-emitting units arranged in an array on the first surface of the substrate, wherein each of the light-emitting units includes a first electrode, an epitaxial layer, and a second electrode sequentially disposed away from the substrate;

[0034] A first grid-shaped groove is formed on the first surface of the substrate;

[0035] forming an anti-crosstalk layer covering at least the sidewalls and the bottom of the first groove;

[0036] removing the rigid substrate;

[0037] A plurality of second grooves are arranged in an array on a second surface of the substrate opposite to the first surface, wherein the first grooves surround each of the second grooves, and an orthographic projection of the first groove on the substrate does not overlap with an orthographic projection of each of the second grooves on the substrate;

[0038] Filling the plurality of second grooves with color conversion material to form a plurality of color conversion units arranged in a one-to-one correspondence with the plurality of second grooves.

[0039] Optionally, in the embodiment of the present disclosure, after forming the anti-crosstalk layer covering at least the sidewalls and the bottom of the first groove, the method further includes:

[0040] forming a first insulating layer on the anti-crosstalk layer;

[0041] A reflective structure surrounding the sidewalls of each of the epitaxial layers is formed on the first insulating layer, and the reflective structure is electrically connected to the second electrode.

[0042] Optionally, in the embodiment of the present disclosure, after forming first grid-shaped grooves on the first surface of the substrate, the method further includes:

[0043] forming a second insulating layer on a sidewall of the epitaxial layer;

[0044] A reflective structure and a pattern of the anti-crosstalk layer are formed on the second insulating layer. The reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] FIG1 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure;

[0046] FIG2 is a schematic diagram of a cross-sectional structure along the direction indicated by MM in FIG1 ;

[0047] FIG3 is a schematic diagram of a cross-sectional structure taken along the direction indicated by MM in FIG1 ;

[0048] FIG4 is a schematic diagram of a cross-sectional structure taken along the direction indicated by MM in FIG1 ;

[0049] FIG5 is a schematic diagram of a cross-sectional structure taken along the direction indicated by MM in FIG1 ;

[0050] FIG6 is a schematic diagram of a cross-sectional structure taken along the direction indicated by MM in FIG1 ;

[0051] FIG7 is a schematic diagram of a cross-sectional structure taken along the direction indicated by MM in FIG1 ;

[0052] FIG8 is a schematic diagram of a portion of the structure in FIG3;

[0053] FIG9 is a schematic top view of a display substrate according to an embodiment of the present disclosure;

[0054] FIG10 is a schematic structural diagram of one of the exemplary embodiments shown in FIG5 ;

[0055] FIG11 is a schematic structural diagram of one exemplary embodiment based on FIG6 ;

[0056] FIG12 is a schematic structural diagram of one exemplary embodiment based on FIG7 ;

[0057] FIG13 is a schematic structural diagram of a display substrate provided in an embodiment of the present disclosure;

[0058] FIG14 is a flow chart of a method for manufacturing a display substrate provided by an embodiment of the present disclosure;

[0059] FIG15 is a flow chart of the method after step S108 in FIG14 ;

[0060] FIG16 is a flow chart of the method after step S107 in FIG14 ;

[0061] 17a to 17d are process flow charts of the display substrate shown in FIG10;

[0062] FIG18 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure;

[0063] FIG19 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure;

[0064] FIG20 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure;

[0065] FIG21 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure;

[0066] FIG22 is a schematic diagram of a top view of a display substrate provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0067] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. And in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0068] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Inside", "outside", "upper", "lower" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0069] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present disclosure. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0070] Quantum dot (QD) color conversion is often used to achieve full-color Micro LED displays. However, because light emitted by Micro LEDs propagates in all directions, it can easily excite the QDs in adjacent sub-pixels through refraction and scattering, leading to color cross-talk. Therefore, preventing these issues has become a pressing technical challenge.

[0071] In view of this, the embodiments of the present disclosure provide a display substrate, a manufacturing method thereof, and a display device, which are used to avoid cross-color leakage while taking into account full-color display and improve display effects.

[0072] As shown in Figures 1 and 2, Figure 1 is a schematic top view of a display substrate provided in an embodiment of the present disclosure, and Figure 2 is a schematic cross-sectional view taken along the direction indicated by line MM in Figure 1; specifically, the display substrate includes:

[0073] The substrate 10 includes a first surface 101 and a second surface 102 disposed opposite each other. The first surface 101 has a grid of first grooves 20, and the second surface 102 has a plurality of second grooves 30 arranged in an array. The first grooves 20 surround each of the second grooves 30, and the orthographic projections of the first grooves 20 on the substrate 10 do not overlap with the orthographic projections of each of the second grooves 30 on the substrate 10.

[0074] A plurality of light-emitting units 40 are arranged in an array on the first surface 101, each of the light-emitting units 40 including a first electrode 41, an epitaxial layer 42, and a second electrode 43 sequentially disposed away from the substrate 10. The plurality of light-emitting units 40 are disposed in a one-to-one correspondence with the plurality of second grooves 30, and an orthographic projection of each light-emitting unit 40 on the substrate 10 overlaps with an orthographic projection of a corresponding second groove 30 on the substrate 10, and does not overlap with an orthographic projection of the first groove 20 on the substrate 10;

[0075] an anti-crosstalk layer 44 covering at least the sidewalls and the bottom of the first groove 20;

[0076] The plurality of color conversion units 45 are disposed in a one-to-one correspondence with the plurality of second grooves 30 , and each of the color conversion units 45 is accommodated in a corresponding second groove 30 .

[0077] In the specific implementation process, the display substrate includes a substrate 10. Exemplarily, the substrate 10 can be a rigid substrate 10, such as a glass substrate 10, a silicon-based substrate 10, etc. Exemplarily, the substrate 10 can also be a flexible substrate 10. Of course, the substrate 10 of the required material can also be set according to the actual application needs, which is not limited here. Moreover, the substrate 10 includes a first surface 101 and a second surface 102 that are relatively arranged, the first surface 101 has a grid-shaped first groove 20, and the second surface 102 has a plurality of second grooves 30 arranged in an array, the first groove 20 surrounds each second groove 30, and the orthographic projection of the first groove 20 on the substrate 10 does not overlap with the orthographic projection of each second groove 30 on the substrate 10. Among them, the specific number of the multiple grooves can be set according to the actual application needs, which is not limited here.

[0078] Furthermore, the display substrate further includes a plurality of light-emitting units 40 arrayed on the first surface 101. The plurality of light-emitting units 40 include light-emitting units 40 emitting different colors. For example, a single pixel can be composed of a red light-emitting unit 40, a green light-emitting unit 40, and a blue light-emitting unit 40, thereby ensuring color display on the display substrate. Of course, the composition of a single pixel can also be configured according to actual application needs, and this is not limited here. The specific number of the plurality of light-emitting units 40 can be configured according to actual application needs, and this is not limited here. Figure 1 does not illustrate all light-emitting units 40. Each light-emitting unit 40 includes a first electrode 41, an epitaxial layer 42, and a second electrode 43, which are sequentially arranged away from the substrate 10. For example, the light-emitting unit 40 can be a Micro LED or a Mini LED, and this is not limited here. The first electrode 41 can be an N-type electrode, the epitaxial layer 42 includes an N-GaN 04, a quantum well layer 05, and a P-GaN 06, which are sequentially arranged away from the substrate 10, and the second electrode 43 can be a P-type electrode. The multiple light-emitting units 40 are arranged in a one-to-one correspondence with the multiple second grooves 30, and the orthographic projection of each light-emitting unit 40 on the substrate 10 does not overlap with the orthographic projection of the corresponding second groove 30 on the substrate 10, nor with the orthographic projection of the first groove 20 on the substrate 10. When color conversion material is subsequently placed within the second grooves 30 to form the corresponding color conversion unit 45, the light emitted by the corresponding light-emitting unit 40 can be converted into light of the desired color for the corresponding sub-pixel, thereby improving the color gamut and viewing angle of the display substrate, making colors purer, more vivid, and more vivid.

[0079] It should be noted that the size of the epitaxial layer 42 corresponding to each light-emitting unit 40 can be 2μm to 20μm, and its orthographic projection shape on the substrate 10 can be circular or square. The angle between the sidewall and the bottom of the epitaxial layer 42 corresponding to each light-emitting unit 40 can be in the range of 60° to 80°. Wherein, d1 represents the size of a single epitaxial layer 42, which ranges from 2μm to 20μm, and the shape can be circular or square; θ represents the etching slope angle, which ranges from 60° to 80°. For example, the angle between the sidewall and the bottom of the epitaxial layer 42 corresponding to each light-emitting unit 40 is 60°. In this way, the light extraction efficiency of each light-emitting unit 40 is guaranteed.

[0080] In addition, the display substrate also includes an anti-crosstalk layer 44 that covers at least the sidewalls and bottom of the first groove 20. In this way, the anti-crosstalk layer 44 can effectively avoid crosstalk and light leakage problems. Exemplarily, the anti-crosstalk layer 44 can be a light-blocking metal layer, and the material used can be at least one of Mo, Al, Ag, etc., or an alloy of multiple compositions thereof. Moreover, the display substrate also includes a plurality of color conversion units 45 arranged in a one-to-one correspondence with the plurality of second grooves 30, and each color conversion unit 45 is accommodated in the corresponding second groove 30. Exemplarily, the color conversion unit 45 can convert the absorbed blue light into red light, or convert the absorbed blue light into green light. In this way, the full-color display of the display substrate is guaranteed. Moreover, during the display process of the display substrate, even if the color conversion unit 45 does not completely convert the blue light, the anti-crosstalk layer 44 can still avoid light leakage and cross-color problems, thereby improving the display effect of the display substrate.

[0081] In the embodiment of the present disclosure, the anti-crosstalk layer 44 extends to the adjacent light-emitting units 40 and is electrically connected to the corresponding first electrodes 41 , and each first electrode 41 is electrically connected through the anti-crosstalk layer 44 .

[0082] Still referring to the exemplary embodiment shown in Figures 1 and 2 , the anti-crosstalk layer 44 extends to adjacent light-emitting units 40 and is electrically connected to the corresponding first electrodes 41. Furthermore, the first electrodes 41 are electrically connected via the anti-crosstalk layer 44. In this way, a common cathode design can be implemented for each light-emitting unit 40 in a single pixel, thereby further reducing cathode resistance and ensuring the display quality of the display substrate.

[0083] In the embodiment of the present disclosure, as shown in Figures 3 and 4 , the display substrate further includes a reflective structure 50 disposed around the sidewalls of each of the epitaxial layers 42. Thus, the reflective structure 50 effectively reflects light, thereby improving the light extraction efficiency of the display substrate and ensuring the display effect of the display substrate. Exemplarily, the material of the reflective structure 50 can be Ag or an Ag alloy, such as ITO / Ag / ITO or Ni / Ag.

[0084] In a specific implementation process, the reflective structure 50 may be arranged in the following two ways, but is not limited to the following ways and is not limited here.

[0085] In one exemplary embodiment, FIG3 is a schematic diagram of another cross-sectional structure along the direction indicated by MM in FIG1. ​​Specifically, the display substrate further includes a first insulating layer 60 located between the reflective structure 50 and the anti-crosstalk layer 44, and the reflective structure 50 is electrically connected to the second electrode 43.

[0086] During the specific implementation process, the display substrate also includes a first insulating layer 60 located between the reflective structure 50 and the anti-crosstalk layer 44. The first insulating layer 60 can be an inorganic dielectric layer. Exemplarily, the inorganic dielectric layer can be deposited on the side of the anti-crosstalk layer 44 facing away from the substrate 10. For example, SiO2 with a thickness of 10nm to 50nm is first deposited by atomic layer deposition (ALD), and then SiO2 with a thickness of 0.2μm to 0.5μm is deposited by plasma enhanced chemical vapor deposition (PECVD). In addition, in this exemplary embodiment, the reflective structure 50 is electrically connected to the second electrode 43. In this way, while taking into account the reflection of light, the resistance of the second electrode 43 is reduced, and the signal transmission efficiency of the second electrode 43 is improved. Moreover, the insulation setting between the anti-crosstalk layer 44 and the reflective structure 50 is ensured by the first insulating layer 60, which effectively prevents the first electrode 41 from being short-circuited with the second electrode 43 through the anti-crosstalk layer 44 and the reflective structure 50, thereby improving the performance of the display substrate.

[0087] In one exemplary embodiment, FIG4 is a schematic diagram of another cross-sectional structure along the direction indicated by lines MM in FIG1 . Specifically, the display substrate further includes a second insulating layer 70 located between the reflective structure 50 and the sidewall of the corresponding epitaxial layer 42 . The reflective structure 50 is directly electrically connected to the anti-crosstalk layer 44 , and the reflective structure 50 is insulated from the second electrode 43 .

[0088] In a specific implementation, the display substrate also includes a second insulating layer 70 located between the reflective structure 50 and the sidewalls of the corresponding epitaxial layer 42. Exemplarily, SiO2 is first deposited using ALD, and then SiO2 or Al2O3 is deposited using CVD. The corresponding film layers are then patterned to form a second insulating layer 70 that only covers the sidewalls of the epitaxial layer 42. A light-blocking metal material is then deposited to form an anti-crosstalk layer 44 that at least covers the sidewalls and bottom of the first groove 20, as well as a reflective structure 50 disposed around the sidewalls of each epitaxial layer 42. In this exemplary implementation, the reflective structure 50 and the anti-crosstalk layer 44 are provided in the same layer and made of the same material, and the reflective structure 50 is directly electrically connected to the anti-crosstalk layer 44. Furthermore, the reflective structure 50 effectively prevents a short circuit between the anti-crosstalk layer 44 and the second electrode 43 when the anti-crosstalk layer 44 overlaps the first electrode 41, thereby ensuring the display effect of the display substrate.

[0089] In the disclosed embodiment, as shown in Figures 5 to 7 , the display substrate further includes a light shielding portion 80 at least partially located on the second surface 102 . The light shielding portion 80 surrounds each of the color conversion units 45 . Thus, the light shielding portion 80 further improves the light leakage problem. Exemplarily, the light shielding portion 80 can be a black matrix (BM). Of course, the material of the light shielding portion 80 can also be set according to actual application needs, and this is not limited here.

[0090] In a specific implementation process, the light shielding portion 80 may be provided in the following two ways, but is not limited to the following ways and is not limited here.

[0091] In one exemplary embodiment, the light shielding portion 80 is located on the second surface 102 and is spaced apart from the anti-crosstalk layer 44. Still taking the exemplary embodiment shown in FIG3 as an example, FIG5 is a schematic cross-sectional view taken along the direction indicated by lines MM in FIG1 . Still taking the exemplary embodiment shown in FIG4 as an example, FIG6 is a schematic cross-sectional view taken along the direction indicated by lines MM in FIG1 .

[0092] In one exemplary embodiment, the second surface 102 further has a third groove 90, which is arranged to extend through the first groove 20, and the portion of the light shielding portion 80 located within the third groove 90 is in direct contact with the anti-crosstalk layer 44. Still taking the exemplary embodiment shown in FIG3 as an example, FIG7 is a schematic cross-sectional view of one of the structures along the direction indicated by line MM in FIG1 .

[0093] Still referring to the exemplary embodiment shown in FIG7 , the second surface 102 further has a third groove 90, which is arranged to be continuous with the first groove 20. Accordingly, the third groove 90 and the first groove 20 constitute a through hole in the substrate 10 at the corresponding position. Moreover, the portion of the light shielding portion 80 located in the third groove 90 is in direct contact with the anti-crosstalk layer 44. In this way, the setting depth of the anti-crosstalk layer 44 is reduced, and the depth can be no more than 5 μm, thereby reducing the process difficulty. In this way, the anti-crosstalk effect is ensured by the anti-crosstalk layer 44 and the light shielding portion 80.

[0094] In the embodiment of the present disclosure, still in combination with Figures 5 to 7, the display substrate further includes a plurality of color resists 91 arranged in an array on the second surface 102, and the orthographic projection of each color resist 91 on the substrate 10 coincides with the orthographic projection of the corresponding color conversion unit 45 on the substrate 10.

[0095] In a specific implementation process, the display substrate also includes a plurality of color resists 91 arranged in an array on the second surface 102. The color of each color resist 91 can be the same as the color required by the corresponding pixel. For example, the color resist 91 corresponding to the light-emitting unit 40 with a red light-emitting color is a red color resist; the color resist 91 corresponding to the light-emitting unit 40 with a green light-emitting color is a green color resist; and the color resist 91 corresponding to the light-emitting unit 40 with a blue light-emitting color is a blue color resist. In this way, the contrast of the display substrate is improved. Among them, the specific number of the plurality of color resists 91 can be set according to actual application needs and is not limited here. Moreover, the orthographic projection of each color resist 91 on the substrate 10 coincides with the orthographic projection of the corresponding color conversion unit 45 on the substrate 10, thereby improving the display contrast while taking into account full-color display.

[0096] In the embodiment of the present disclosure, along the thickness direction of the substrate 10 , the depth of the first groove 20 is greater than or equal to the thickness of each color conversion unit 45 , and the thickness of each color conversion unit 45 is less than the depth of the corresponding second groove 30 .

[0097] In a specific implementation, the direction indicated by arrow X in the figure is along the thickness of the substrate 10. Along this direction, the depth of the first groove 20 is greater than or equal to the thickness of each color conversion unit 45. This prevents lateral crosstalk when the QD emits light. Here, d2 represents the distance between the first groove 20 and the edge of the epitaxial layer 42; d3 represents the width of the first groove 20; H3 represents the etching depth of the first groove 20; and H4 represents the reserved thickness of the substrate 10 at the corresponding position of the first groove 20. Furthermore, the thickness of each color conversion unit 45 is less than the depth of the corresponding second groove 30; d4 represents the width of the second groove 30, and H5 represents the etching depth of the second groove 30. In practical applications, the width of the second groove 30 is slightly larger than the size of the epitaxial layer 42 by 1μm to 5μm. For example, the depth of the first groove 20 ranges from 5μm to 10μm. For example, the depth of the first groove 20 and the thickness of the color conversion unit 45 are both 10μm. In actual applications, the depth of the first groove 20 is less than the maximum thickness of the substrate 10. For example, the thickness of the substrate 10 is 15μm. Accordingly, the first groove 20 does not completely penetrate the substrate 10. In this way, the metal material corresponding to the anti-crosstalk layer 44 is effectively prevented from being deposited on the rigid substrate, and the metal material cannot be completely dissociated when the laser dissociates the substrate 10. It should be noted that the side wall angle of the first groove 20 is close to a right angle, and the distance between the edge of the first groove 20 and the edge of the adjacent epitaxial layer 42 is 1μm to 5μm, for example, 2μm. In this way, it is ensured that the anti-crosstalk layer 44 can be effectively overlapped on the first electrode 41, thereby realizing the electrical connection between the anti-crosstalk layer 44 and the first electrode 41.

[0098] In the embodiment of the present disclosure, a portion of the anti-crosstalk layer 44 located at the bottom of the first groove 20 is located away from the light-emitting units 40 and is flush with a side of the color conversion units 45 that is away from the light-emitting units 40 .

[0099] During the specific implementation process, the inventors found in actual research that, in combination with the exemplary embodiment shown in Figure 8 (which is a partial structural schematic diagram in Figure 3), the portion of the anti-crosstalk layer 44 located at the bottom of the first groove 20 is away from the side of the multiple light-emitting units 40 and is flush with the side of the multiple color conversion units 45 away from the multiple light-emitting units 40, which effectively avoids the light leakage problem.

[0100] In the embodiment of the present disclosure, still referring to FIG. 3 to FIG. 7 , the orthographic projection of the epitaxial layer 42 on the substrate 10 completely falls within the region of the orthographic projection of the corresponding color conversion unit 45 on the substrate 10 .

[0101] Exemplarily, the size of the color conversion unit 45 is slightly larger than that of the epitaxial layer 42. For example, the difference between the extension length of the color conversion unit 45 in a direction perpendicular to the thickness of the substrate 10 and the extension length of the epitaxial layer 42 in the same direction ranges from 1 μm to 5 μm, thereby effectively preventing blue light leakage while ensuring color conversion efficiency.

[0102] In the embodiment of the present disclosure, the multiple light-emitting units 40 include a red light-emitting unit 40, a green light-emitting unit 40 and a blue light-emitting unit 40; the color conversion unit 45 includes a red quantum dot material corresponding to the red light-emitting unit 40, a green quantum dot material corresponding to the green light-emitting unit 40, and a light scattering structure corresponding to the blue light-emitting unit 40.

[0103] For example, the color conversion unit 45 can be made of a QD material. Assuming that each light-emitting unit 40 emits blue light, the color conversion unit 45 includes a red quantum dot material corresponding to the red light-emitting unit 40, a green quantum dot material corresponding to the green light-emitting unit 40, and a light scattering structure corresponding to the blue light-emitting unit 40. The light scattering structure can be composed of scattering particles or other highly transparent particles, without limitation.

[0104] In the embodiment of the present disclosure, the color conversion unit 45 includes white light phosphors corresponding to the respective light-emitting units 40 .

[0105] In the embodiment of the present disclosure, the cross-sectional shape of each of the light-emitting units 40 along a direction parallel to the plane where the substrate 10 is located is one of circular and square.

[0106] Still referring to the exemplary embodiment shown in FIG1 , each light-emitting unit 40 has a square cross-sectional shape along a direction parallel to the plane of the substrate 10. In the exemplary embodiment shown in FIG9 , each light-emitting unit 40 has a circular cross-sectional shape along a direction parallel to the plane of the substrate 10. Of course, the shape of each light-emitting unit 40 can also be set according to actual application needs and is not limited here.

[0107] It should be noted that, in addition to the film layer structure mentioned above, the display substrate provided by the embodiment of the present disclosure also includes a flat layer 92 located on the side of the reflective structure 50 away from the substrate 10. In this way, the flat layer 92 can effectively fill the first groove 20. Exemplarily, the thickness of the flat layer 92 is greater than or equal to 10 μm. In addition, the flat layer 92 is also provided with a via. The display substrate also includes a bonding electrode 93, which is electrically connected to the reflective structure 50 through the via. Exemplarily, the bonding electrode 93 can be made by first using Cu / Sn, or Au / Sn, or Cr / Pt / Ni / Ti and other buffer metals and then depositing Cu / Au and Sn, and the thickness can be 1 μm to 5 μm. As shown in FIG10, this is a structural schematic diagram based on one of the exemplary embodiments shown in FIG5. As shown in FIG11, this is a structural schematic diagram based on one of the exemplary embodiments shown in FIG6. As shown in FIG12, this is a structural schematic diagram based on one of the exemplary embodiments shown in FIG7.

[0108] Of course, the display substrate provided by the embodiment of the present disclosure may include, in addition to the film layer structure mentioned above, other film layer structures, which are not limited here.

[0109] Based on the same disclosed concept, as shown in FIG13 , an embodiment of the present disclosure further provides a display device, which includes the display substrate 100 as described above, and a driving backplane 200 electrically connected to the display substrate 100. In practical applications, the driving backplane 200 can be used to control the display of the display substrate 100, thereby ensuring the display capability of the display device.

[0110] In addition, the principle of solving the problem of the display device is similar to that of the aforementioned display substrate 100 , so the implementation of the display device can refer to the implementation of the aforementioned display substrate 100 , and the repeated parts will not be repeated.

[0111] In specific implementations, the display device provided by the embodiments of the present invention can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigation system, or the like. Other essential components of the display device are well understood by those skilled in the art and are not described in detail here, nor should they be construed as limitations of the present invention.

[0112] Based on the same disclosed concept, as shown in FIG14 , the embodiment of the present disclosure further provides a method for manufacturing a display substrate, comprising:

[0113] S101: transferring the epitaxial wafer to a carrier substrate and removing the substrate base material of the epitaxial wafer;

[0114] S102: performing a thinning process on a side of the remaining film layer of the epitaxial wafer facing away from the intermediate substrate to obtain a processed structure;

[0115] S103: depositing a transparent conductive layer on the treated structure to obtain a deposited substrate;

[0116] S104: transferring the deposited substrate to a rigid substrate through a substrate;

[0117] S105: removing the intermediate substrate;

[0118] S106: performing patterning on the deposited substrate to form a plurality of light-emitting units arranged in an array on the first surface of the substrate, wherein each of the light-emitting units includes a first electrode, an epitaxial layer, and a second electrode sequentially disposed away from the substrate;

[0119] S107: Disposing first grooves having a grid shape on the first surface of the substrate;

[0120] S108: forming an anti-crosstalk layer covering at least the sidewalls and the bottom of the first groove;

[0121] S109: removing the rigid substrate;

[0122] S110: Disposing a plurality of second grooves arranged in an array on a second surface of the substrate opposite to the first surface, wherein the first grooves surround each of the second grooves, and an orthographic projection of the first groove on the substrate does not overlap with an orthographic projection of each of the second grooves on the substrate;

[0123] S111: Filling the plurality of second grooves with a color conversion material to form a plurality of color conversion units arranged in a one-to-one correspondence with the plurality of second grooves.

[0124] In an embodiment of the present disclosure, as shown in FIG15 , after step S108 : forming an anti-crosstalk layer covering at least the sidewalls and the bottom of the first groove, the method further includes:

[0125] S201: forming a first insulating layer on the anti-crosstalk layer;

[0126] S202: forming a reflective structure surrounding the sidewalls of each of the epitaxial layers on the first insulating layer, wherein the reflective structure is electrically connected to the second electrode.

[0127] In an embodiment of the present disclosure, as shown in FIG16 , after step S107 : forming first grid-shaped grooves on the first surface of the substrate, the method further includes:

[0128] S301: forming a second insulating layer on the sidewalls of the epitaxial layer;

[0129] S302: forming a reflective structure and a pattern of the anti-crosstalk layer on the second insulating layer, wherein the reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other.

[0130] The following is a detailed explanation of the manufacturing process of the display substrate shown in FIG10 , which is obtained by sequentially executing the process flow charts shown in FIG17a , FIG17b , FIG17c , and FIG17d . The process flow chart corresponding to FIG17a sequentially executes steps S1 to S4; after step S4, the process flow chart corresponding to FIG17b is executed, and accordingly, steps S5 to S7 are executed sequentially; after step S7, the process flow chart corresponding to FIG17c is executed, and accordingly, steps S8 to S9 are executed sequentially; after step S9, the process flow chart corresponding to FIG17d is executed, and accordingly, steps S10 to S12 are executed sequentially.

[0131] First, transfer the epitaxial wafer to the middle carrier substrate. The epitaxial wafer includes a substrate and an epitaxial layer arrayed on the substrate. 01 represents the epitaxial wafer, 011 represents the substrate, 012 represents the epitaxial layer, and 02 represents the middle carrier substrate. For example, the sapphire substrate GaN wafer (epitaxial wafer or wafer) is transferred to the middle carrier substrate through temporary bonding. For another example, the silicon-based GaN wafer is transferred to the middle carrier substrate through temporary bonding glue. The material of the middle carrier substrate can be glass, sapphire, silicon, etc., which is not limited here. Then, the glass removes the substrate of the epitaxial wafer. It should be noted that the cross-sectional structure diagram involved in the embodiment of the present disclosure is actually a cross-section of a portion of the LED chip in a single epitaxial wafer 01.

[0132] Then, the side of the remaining film layer of the epitaxial wafer other than the substrate substrate that is away from the middle carrier substrate is thinned to obtain the processed structure. Exemplarily, etching or chemical mechanical polishing (CMP) can be used to remove the buffer layer gallium nitride (Buffer GaN) to expose the N-GaN layer. Exemplarily, the remaining thickness of the N-GaN layer is 0.5μm to 2μm. Among them, 03 represents Buffer GaN, 04 represents N-GaN, 05 represents MQW, 06 represents P-GaN, 07 represents a transparent conductive layer, and 08 represents a temporary bonding glue.

[0133] Then, a transparent conductive layer is deposited on the treated structure to obtain a deposited substrate. For example, the transparent conductive layer is ITO, and the deposited thickness can be 0.1 μm to 0.3 μm. In addition, the deposited transparent conductive layer can be subjected to a high-temperature annealing treatment. Then, an inorganic insulating layer, such as SiO2, is deposited to a thickness of 0.2 μm to 0.5 μm. In this way, a deposited substrate is obtained. Here, 09 represents an inorganic insulating layer.

[0134] The deposited substrate is then transferred to a rigid substrate via a substrate. For example, the substrate may be polyimide (PI). The thickness of the substrate may range from 10 μm to 15 μm, for example, 10 μm. For example, the rigid substrate may be a glass substrate. Here, 010 represents a rigid substrate.

[0135] The intermediate substrate is then removed. Exemplarily, this is done by laser lift-off (LLO). It should be noted that the rigid substrate is larger than the wafer, and multiple epitaxial wafers can be transferred onto a single rigid substrate. After LLO, the intermediate substrate is ashed to remove residual adhesive from the P-GaN side bonding.

[0136] The deposited substrate is then patterned to form a plurality of light-emitting units arranged in an array on the first surface of the substrate. The specific number of light-emitting units can be set based on actual applications and is not limited here. Each light-emitting unit includes a first electrode, an epitaxial layer, and a second electrode, which are sequentially arranged away from the substrate.

[0137] Then, a first grid-shaped groove is formed on the first surface of the substrate. Exemplarily, the n-electrode ITO around the periphery of a single LED and the first surface of the substrate are etched to form the first groove. The etching depth of the first groove is ensured to be greater than or equal to the QD thickness. For example, the QD thickness and the substrate etching depth are both 10 μm. Furthermore, to ensure that the substrate is not completely etched through, the etching depth of the first groove is correspondingly less than the maximum thickness of the substrate. Furthermore, the first groove is 1 μm to 5 μm from the edge of the epitaxial layer to facilitate the subsequent overlap of the anti-crosstalk layer with the n-electrode ITO, thereby forming a common cathode structure for light-emitting units of various colors, exemplarily an RGB common cathode structure. The width of the first groove is greater than 2 μm. The etching depth of the first groove ranges from 5 μm to 10 μm. The reserved thickness of the substrate at the corresponding position of the first groove ranges from greater than 1 μm. Furthermore, it should be noted that the sidewall angle of the first groove is close to a right angle. Figure 18 shows a schematic top view of one of the structures after the deposited substrate is patterned. It should be noted that the related top view structural schematic diagrams mentioned in the embodiments of the present disclosure only illustrate part of the structure in the substrate.

[0138] Then, an anti-crosstalk layer is formed that covers at least the sidewalls and bottom of the first groove. As shown in Figure 19, a schematic diagram of a top view structure of the anti-crosstalk layer is shown. Exemplarily, a light-blocking metal layer is filled around the first groove, and metals or alloys such as Ni, Cr, W, Mo, Al, Ag, Cu, and Au can be used. The thickness of the anti-crosstalk layer ranges from 0.2μm to 2μm. On the one hand, the first groove is filled; on the other hand, the cathode electrode is lowered.

[0139] Next, a first insulating layer is formed on the anti-crosstalk layer. Exemplarily, the first insulating layer is SiO2. A reflective structure is then formed on the first insulating layer, surrounding the sidewalls of each epitaxial layer. This reflective structure is electrically connected to the second electrode. In this way, while the reflective structure is electrically connected to the second electrode, it also improves the light extraction efficiency of the display substrate. Figure 20 shows a schematic top view of one embodiment of the reflective structure arrangement.

[0140] Then, a planarization layer is formed on the reflective structure. Accordingly, the planarization layer flattens and fills the step difference of the first groove. Exemplarily, the planarization layer can be made of an organic resin or a silicon-on-glass (SOG) bonding material. The thickness of the planarization layer is greater than 10 μm. Furthermore, holes are opened in the planarization layer at locations corresponding to the bonding electrodes.

[0141] Then, the corresponding bonding electrodes are placed in the corresponding vias of the planar layer. These bonding electrodes are used to bond to the driver backplane. In actual fabrication, a buffer metal such as Cu / Sn, Au / Sn, or Cr / Pt / Ni / Ti can be used first, followed by deposition of Cu / Au and Sn to a thickness of 1μm to 5μm. Figure 21 shows a top-down schematic diagram of one possible bonding electrode configuration.

[0142] The display substrate obtained in the previous step is then transferred to the intermediate glass substrate using a temporary transfer adhesive. The rigid substrate is then peeled off using LLO to complete the transfer. In an exemplary embodiment, the rigid substrate is the lower glass substrate. Reference numeral 020 represents the temporary transfer adhesive, and reference numeral 021 represents the intermediate glass substrate.

[0143] Then, an ashing process is used to create a plurality of second grooves arranged in an array on a second surface of the substrate, opposite the first surface. The second grooves are slightly larger than the epitaxial layer to prevent light leakage. The first grooves surround each of the second grooves, and the orthographic projections of the first grooves on the substrate do not overlap with the orthographic projections of the second grooves on the substrate.

[0144] Then, color conversion material is filled into the multiple second grooves to form multiple color conversion units arranged in a one-to-one correspondence with the multiple second grooves. Figure 22 shows a schematic top view of one configuration of the color conversion units. Exemplarily, a printing process is used to print red quantum dot material in the second grooves corresponding to the red light-emitting units, and green quantum dot material in the second grooves corresponding to the green light-emitting units. Then, a color filter layer is formed on the second surface, comprising multiple color resists and light-shielding portions. In this way, a display substrate as shown in Figure 10 is obtained.

[0145] After forming a grid-like first groove on the first surface of the substrate, a second insulating layer is formed on the sidewalls of the epitaxial layer. Exemplarily, the second insulating layer can be made of SiO2. This second insulating layer is patterned to cover only the sidewalls. In practical applications, after etching the epitaxial layer, the sidewalls are passivated and patterned to ensure only the sidewalls are covered.

[0146] Then, an anti-crosstalk metal is deposited on the second insulating layer, so that the sidewall reflective metal and the crosstalk metal are the same layer. Thus, a pattern of a reflective structure and an anti-crosstalk layer is formed on the second insulating layer, wherein the reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other. In practical applications, the anti-crosstalk metal can be made of metals with high reflectivity such as Ti / Al / Ti, ITO / Ag / ITO. It is also possible to etch a metal layer, i.e., a passivation layer, by opening holes on the P-GaN side; after SOG is filled, holes are opened on the P side to make bonding electrodes. Compared with the manufacturing method corresponding to Figure 10, the number of masks is reduced. In addition, the manufacturing method for other film layer structures can be implemented with reference to the method corresponding to Figure 10, which will not be described here.

[0147] In the embodiment of the present disclosure, the display substrate shown in FIG12 reduces the etching depth of the anti-crosstalk layer compared to the display substrate shown in FIG11, thereby reducing the process difficulty. In addition, a third groove is formed on the second surface, and a light shielding portion is provided at the corresponding position, further enhancing the anti-crosstalk effect.

[0148] An embodiment of the present disclosure provides a display substrate, a manufacturing method thereof, and a display device, wherein the display substrate includes a substrate, a plurality of light-emitting units arranged in an array on a first surface of the substrate, an anti-crosstalk layer, and a plurality of color conversion units; wherein the first surface of the substrate has a grid-shaped first groove, and the second surface of the substrate opposite to the first surface has a plurality of second grooves arranged in an array; the first groove surrounds each second groove, and the orthographic projection of the first groove on the substrate does not overlap with the orthographic projection of each second groove on the substrate; each light-emitting unit includes a first electrode, an epitaxial layer, and a second electrode arranged in sequence away from the substrate, the plurality of light-emitting units are arranged in a one-to-one correspondence with the plurality of second grooves, and the orthographic projection of each light-emitting unit on the substrate overlaps with the orthographic projection of the corresponding second groove on the substrate and does not overlap with the orthographic projection of the first groove on the substrate; the plurality of color conversion units are arranged in a one-to-one correspondence with the plurality of second grooves, and each color conversion unit is placed in a corresponding second groove; and the anti-crosstalk layer is arranged to cover at least the sidewalls and bottom of the first groove. In this way, during the light-emitting process of the light-emitting unit, even if the color conversion unit does not completely convert the blue light, the anti-crosstalk layer can still avoid light leakage and color crosstalk problems, thereby improving the display effect of the display substrate.

[0149] Although the preferred embodiments of the present disclosure have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present disclosure.

[0150] Obviously, those skilled in the art may make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. Thus, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include these modifications and variations.

Claims

1. A display substrate, wherein: include: A substrate, comprising a first surface and a second surface arranged opposite to each other, wherein the first surface has a grid-shaped first groove, and the second surface has a plurality of second grooves arranged in an array, wherein the first groove surrounds each of the second grooves, and an orthographic projection of the first groove on the substrate and an orthographic projection of each of the second grooves on the substrate do not overlap each other; A plurality of light-emitting units are arranged in an array on the first surface, each of the light-emitting units comprises a first electrode, an epitaxial layer, and a second electrode which are sequentially arranged away from the substrate, the plurality of light-emitting units are arranged in one-to-one correspondence with the plurality of second grooves, and the orthographic projection of each light-emitting unit on the substrate overlaps with the orthographic projection of the corresponding second groove on the substrate, and does not overlap with the orthographic projection of the first groove on the substrate; an anti-crosstalk layer, covering at least the sidewall and the bottom of the first groove; A plurality of color conversion units are arranged corresponding to the plurality of second grooves one by one, and each of the color conversion units is accommodated in a corresponding second groove.

2. The display substrate according to claim 1, wherein: The anti-crosstalk layer extends to the adjacent light-emitting units and is electrically connected to the corresponding first electrodes, and the first electrodes are electrically connected through the anti-crosstalk layer.

3. The display substrate according to claim 1, wherein: The invention also includes a reflective structure arranged around the sidewalls of each of the epitaxial layers.

4. The display substrate according to claim 3, wherein: The invention also includes a first insulating layer located between the reflective structure and the anti-crosstalk layer, and the reflective structure is electrically connected to the second electrode.

5. The display substrate according to claim 3, wherein: It also includes a second insulating layer located between the reflective structure and the side wall of the corresponding epitaxial layer. The reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other.

6. The display substrate according to claim 1, wherein: The device further includes a light shielding portion at least partially located on the second surface, wherein the light shielding portion surrounds each of the color conversion units.

7. The display substrate according to claim 6, wherein: The light shielding portion is located on the second surface, and the light shielding portion is spaced apart from the anti-crosstalk layer.

8. The display substrate according to claim 6, wherein: The second surface further has a third groove, the third groove is arranged to penetrate the first groove, and the part of the light shielding portion located in the third groove is in direct contact with the anti-crosstalk layer.

9. The display substrate according to claim 1, wherein: It also includes a plurality of color resists arranged in an array on the second surface, wherein the orthographic projection of each color resist on the substrate coincides with the orthographic projection of the corresponding color conversion unit on the substrate.

10. The display substrate according to any one of claims 1 to 9, wherein: Along a thickness direction penetrating the substrate, a depth of the first groove is greater than or equal to a thickness of each of the color conversion units, and a thickness of each of the color conversion units is less than a depth of the corresponding second groove.

11. The display substrate according to any one of claims 1 to 10, wherein: A portion of the anti-crosstalk layer located at the bottom of the first groove is located away from the side of the plurality of light-emitting units and is arranged flush with the side of the plurality of color conversion units that is away from the plurality of light-emitting units.

12. The display substrate according to any one of claims 1 to 11, wherein: The orthographic projection of the epitaxial layer on the substrate completely falls within the region of the orthographic projection of the corresponding color conversion unit on the substrate.

13. The display substrate according to any one of claims 1 to 12, wherein: The multiple light-emitting units include a red light-emitting unit, a green light-emitting unit and a blue light-emitting unit; the color conversion unit includes a red quantum dot material corresponding to the red light-emitting unit, a green quantum dot material corresponding to the green light-emitting unit, and a light scattering structure corresponding to the blue light-emitting unit.

14. The display substrate according to any one of claims 1 to 12, wherein: The color conversion unit includes white light phosphors corresponding to the respective light emitting units.

15. The display substrate according to any one of claims 1 to 14, wherein: The cross-sectional shape of each of the light-emitting units along a direction parallel to the plane where the substrate is located is one of a circle and a square.

16. A display device, wherein: include: The display substrate according to any one of claims 1 to 15, and a display substrate electrically connected to the display substrate Drive backplane.

17. A method for manufacturing a display substrate, wherein: include: Transferring the epitaxial wafer to a carrier substrate and removing the substrate base material of the epitaxial wafer; Performing a thinning process on a side of the remaining film layer of the epitaxial wafer that is away from the intermediate substrate to obtain a processed structure; Depositing a transparent conductive layer on the treated structure to obtain a deposited substrate; transferring the deposited substrate to a rigid substrate through a substrate; removing the intermediate substrate; Performing patterning on the deposited substrate to form a plurality of light-emitting units arranged in an array on the first surface of the substrate, wherein each of the light-emitting units includes a first electrode, an epitaxial layer, and a second electrode which are sequentially arranged away from the substrate; A first grid-shaped groove is formed on the first surface of the substrate; forming an anti-crosstalk layer covering at least the sidewall and the bottom of the first groove; removing the rigid substrate; A plurality of second grooves arranged in an array are provided on a second surface of the substrate opposite to the first surface, wherein the first groove surrounds each of the second grooves, and an orthographic projection of the first groove on the substrate does not overlap with an orthographic projection of each of the second grooves on the substrate; The color conversion material is filled into the plurality of second grooves to form a plurality of color conversion units arranged in a one-to-one correspondence with the plurality of second grooves.

18. The method of claim 17, wherein: After forming the anti-crosstalk layer covering at least the sidewall and the bottom of the first groove, the method further includes: forming a first insulating layer on the anti-crosstalk layer; A reflective structure surrounding the sidewalls of each of the epitaxial layers is formed on the first insulating layer, and the reflective structure is electrically connected to the second electrode.

19. The method of claim 17, wherein: After the first surface of the substrate is provided with first grid-shaped grooves, the method further includes: forming a second insulating layer on the sidewalls of the epitaxial layer; A reflective structure and a pattern of the anti-crosstalk layer are formed on the second insulating layer, the reflective structure is directly electrically connected to the anti-crosstalk layer, and the reflective structure and the second electrode are insulated from each other.

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