Anti-reflection coating composition as well as application and coating structure thereof

Abstract

The invention discloses an anti-reflection coating composition as well as application and a coating structure thereof, and belongs to the technical field of photoetching. The anti-reflection coating composition is prepared from the following components in percentage by mass: 1 to 20 weight percent of non-matting resin, 5 to 25 weight percent of matting resin, 0.1 to 1.5 weight percent of a dyeing compound A, 0.1 to 1.5 weight percent of a catalyst, 0.2 to 1.5 weight percent of a cross-linking agent and 51 to 90 weight percent of a solvent. The matting resin is prepared from matrix resin and a dyeing compound B through a chemical grafting reaction, and the matrix resin is selected from at least one of acrylic resin, polyimide resin, novolac epoxy resin and polysiloxane resin. According to the composition, the anti-reflection layer has an excellent anti-reflection effect when the thickness is low, and higher storage stability is obtained.

Description

Technical Field

[0001] The present invention relates to the field of lithography technology, and particularly relates to an anti-reflection coating composition, its application, and a coating structure. Background Art

[0002] In order to improve the clarity and resolution of lithography patterns, a photoresist layer and an anti-reflection layer are usually used in combination. If the photoresist layer is coated on top of the anti-reflection layer, the anti-reflection layer is called a bottom anti-reflection coating (BARC). If the anti-reflection layer is coated on top of the photoresist, the anti-reflection layer is called a top anti-reflection coating (TARC). Compared with the top anti-reflection layer, the bottom anti-reflection layer has a more obvious effect in reducing the swing effect and the notch effect, and is currently a widely used solution for eliminating reflectivity.

[0003] The composition of the bottom anti-reflection layer BARC can generally be divided into two systems: inorganic and organic. Among them, the organic BARC is prepared by a spin coating process using a polymer material. However, the current bottom anti-reflection layer BARC based on the organic system has at least the following technical problems:

[0004] The thickness of the bottom anti-reflection layer BARC is relatively thick, for example, 150 nm - 200 nm, to eliminate the standing wave effect, but this makes its removal more difficult. The storage stability of the bottom anti-reflection layer BARC is poor, and the shelf life is greatly shortened when the temperature is higher than 35°C, which is not conducive to long-term use. Summary of the Invention

[0005] In view of this, the present invention provides an anti-reflection coating composition, its application, and a coating structure, which can solve the technical problems existing in the related art.

[0006] Specifically, the following technical solutions are included:

[0007] On the one hand, an anti-reflection coating composition is provided, and the anti-reflection coating composition includes the following components in mass percentages:

[0008] 1 wt% - 20 wt% of a non-extinguishing resin, 5 wt% - 25 wt% of an extinguishing resin, 0.1 wt% - 1.5 wt% of a dyeing compound A, 0.1 wt% - 1.5 wt% of a catalyst, 0.2 wt% - 1.5 wt% of a cross-linking agent, 51 wt% - 90 wt% of a solvent;

[0009] The extinguishing resin is prepared by a chemical grafting reaction of a matrix resin and a dyeing compound B, and the matrix resin is selected from at least one of an acrylic resin, a polyimide resin, a phenolic epoxy resin, and a polysiloxane resin.

[0010] In some possible implementation manners, the non-extinction resin is selected from at least one of acrylic resin, polyimide resin, phenolic epoxy resin, and polysiloxane resin.

[0011] In some possible implementation manners, the dyeing compound A is an aromatic compound that absorbs light of a target wavelength;

[0012] The target wavelength includes a wavelength range from 100 nm to 400 nm.

[0013] In some possible implementation manners, the dyeing compound A is a cinnamate compound, and the cinnamate compound is selected from at least one of methyl cinnamate, ethyl cinnamate, and methyl 4-hydroxy-3-methoxycinnamate.

[0014] In some possible implementation manners, the dyeing compound B is an aromatic compound that absorbs light of a target wavelength;

[0015] The target wavelength includes a wavelength range from 100 nm to 400 nm.

[0016] In some possible implementation manners, the dyeing compound B includes at least one of anthracene and its derivatives, benzene and its derivatives, rhodamine, eosin, perylene and its derivatives, and cinnamate compounds.

[0017] In some possible implementation manners, the weight average molecular weight Mw of the non-extinction resin is 5000 - 20000;

[0018] The weight average molecular weight Mw of the matrix resin is 5000 - 15000.

[0019] In some possible implementation manners, the catalyst includes at least one of organic acid catalysts and organic acid salt catalysts.

[0020] In some possible implementation manners, the catalyst is an organic acid salt catalyst, and the organic acid salt catalyst includes at least one of p-toluenesulfonate, naphthalenesulfonate, fluoroantimonate, and hexafluorophosphate.

[0021] In some possible implementation manners, the crosslinking agent includes at least one of melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, and urea-formaldehyde resin.

[0022] On the other hand, provided is the application of any one of the above antireflection coating compositions in a lithography process.

[0023] On yet another hand, provided is a coating structure, and the coating structure includes: a substrate, a bottom antireflection layer, and a photoresist layer;

[0024] The bottom antireflection layer is formed on the substrate by any of the above antireflection coating compositions;

[0025] The photoresist layer is formed on the bottom antireflection layer.

[0026] In some possible implementation manners, the bottom antireflection layer can absorb radiation with a wavelength of 100 nm - 400 nm.

[0027] The beneficial effects of the technical solutions provided by the embodiments of the present invention at least include:

[0028] The antireflection coating composition provided by the present invention has a matting resin prepared by a chemical grafting reaction of a matrix resin and a dyeing compound B, so that it has matting performance. At the same time, a non-matting resin is added thereto, and the two together serve as a film-forming resin, and crosslink with a crosslinking agent under the action of a catalyst, thereby curing to form an antireflection layer. The combination of the non-matting resin and the matting resin realizes the double combination of physical mixing and chemical grafting between the dyeing compound A and the resin and between the dyeing compound B and the resin, which is more beneficial for adjusting the proportions of the dyeing compound A and the film-forming resin, thereby effectively regulating the viscosity and extinction coefficient of the coating composition, ensuring the reflection effect of the resulting antireflection layer at a low thickness, and obtaining stronger storage stability. Description of the Drawings

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0030] Figure 1 It is the UV test curve of the PM eluate corresponding to Example 1;

[0031] Figure 2 It is the UV test curve of the PMA eluate corresponding to Example 1;

[0032] Figure 3 It is the UV test curve of the EL eluate corresponding to Example 1;

[0033] Figure 4 It is the UV test curve of the PM eluate corresponding to Comparative Example 1;

[0034] Figure 5 It is the scanning electron microscope image of the test sample shown in Example 1;

[0035] Figure 6 It is the scanning electron microscope image of the test sample shown in Example 2;

[0036] Figure 7 is the scanning electron microscope image of the test sample shown in Comparative Example 2;

[0037] Figure 8 is the scanning electron microscope image of the test sample shown in Comparative Example 3. Detailed Embodiments

[0038] To make the technical solutions and advantages of the present invention clearer, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0039] In the lithography process, the line width uniformity within a block directly affects the critical dimension (CD) and resolution of the pattern, and the influencing factors of the line width uniformity within a block include: uneven substrate reflectivity, different photoresist film thicknesses above and below the steps, etc. As the feature size decreases, the line width non-uniformity and photoresist pits caused by the high-reflection layer, as well as the lateral photoreaction caused by scattering of solid particles in the photoresist film during lithography, deteriorate the topography.

[0040] To improve the clarity and resolution of the lithography pattern, the photoresist layer and the anti-reflection layer are usually used in combination. If the photoresist layer is coated on top of the anti-reflection layer, the anti-reflection layer is called the bottom anti-reflection coating (BARC). If the anti-reflection layer is coated on top of the photoresist, the anti-reflection layer is called the top anti-reflection coating (TARC). Compared with the top anti-reflection layer, the bottom anti-reflection layer has a more obvious effect of reducing the swing effect and the notch effect, and is currently a widely used solution for eliminating reflectivity.

[0041] The composition of the bottom anti-reflection layer BARC can generally be divided into two systems: inorganic and organic. The organic BARC is prepared by a spin coating process using polymer materials. The principle is that the dyeing groups in the polymer absorb ultraviolet light to reduce the substrate reflectivity.

[0042] However, the current bottom anti-reflection layer BARC based on the organic system has at least the following technical problems:

[0043] The thickness of the bottom anti-reflection layer BARC is relatively thick, for example, 150 nm - 200 nm, to eliminate the standing wave effect. However, this makes it difficult to remove. If etched for a long time to remove, it will corrode the unexposed photoresist layer, resulting in a lower pattern resolution. The storage stability of the bottom anti-reflection layer BARC is poor, and the shelf life is greatly shortened when the temperature is higher than 35°C, which is not conducive to long-term use.

[0044] In view of the technical problems existing in the related art, an embodiment of the present invention provides an anti-reflection coating composition, which comprises the following components in mass percentages:

[0045] 1 wt%-20 wt% of a non-extinguishing resin, 5 wt%-25 wt% of an extinguishing resin, 0.1 wt%-1.5 wt% of a dyeing compound A, 0.1 wt%-1.5 wt% of a catalyst, 0.2 wt%-1.5 wt% of a crosslinking agent, and 51 wt%-90 wt% of a solvent.

[0046] As an embodiment of the present invention, the anti-reflection coating composition comprises the following components in mass percentages:

[0047] 5 wt%-15 wt% of a non-extinguishing resin, 10 wt%-20 wt% of an extinguishing resin, 0.2 wt%-0.5 wt% of a dyeing compound A, 0.2 wt%-1.0 wt% of a catalyst, 0.5 wt%-1.0 wt% of a crosslinking agent, and 62.5 wt%-80 wt% of a solvent.

[0048] Regarding the mass percentages of the components in the anti-reflection coating composition, some specific examples include but are not limited to the following:

[0049] The mass percentage of the non-extinguishing resin includes but is not limited to: 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, etc.

[0050] The mass percentage of the extinguishing resin includes but is not limited to: 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%, etc.

[0051] The mass percentage of the dyeing compound A includes but is not limited to: 0.2 wt%, 0.25 wt%, 0.3 wt%, 0.35 wt%, 0.4 wt%, 0.45 wt%, 0.5 wt%, etc.

[0052] The mass percentage of the catalyst includes but is not limited to: 0.2 wt%, 0.25 wt%, 0.3 wt%, 0.35 wt%, 0.4 wt%, 0.45 wt%, 0.5 wt%, 0.6 wt%, 0.7 wt%, 0.8 wt%, 0.9 wt%, 1 wt%, etc.

[0053] The mass percentages of the cross-linking agent include, but are not limited to: 0.5 wt%, 0.55 wt%, 0.6 wt%, 0.65 wt%, 0.7 wt%, 0.75 wt%, 0.8 wt%, 0.85 wt%, 0.9 wt%, 0.95 wt%, 1 wt%, etc.

[0054] The mass percentages of the solvent include, but are not limited to: 50 wt%, 60 wt%, 65 wt%, 70 wt%, 75 wt%, 80 wt%, 85 wt%, 90 wt%, etc.

[0055] In particular, the matting resin is prepared by a chemical grafting reaction of a matrix resin and a dyeing compound B, and the matrix resin is selected from at least one of an acrylic resin, a polyimide resin, a phenolic epoxy resin, and a polysiloxane resin.

[0056] The anti-reflection coating composition provided by the present invention has a matting resin prepared by a chemical grafting reaction of a matrix resin and a dyeing compound B, so that it has a matting property. At the same time, a non-matting resin is added thereto, and both are used as film-forming resins, and cross-linking reaction occurs with a cross-linking agent under the action of a catalyst, thereby curing to form an anti-reflection layer. The combination of the non-matting resin and the matting resin realizes the double combination of physical mixing and chemical grafting between the dyeing compound A and the dyeing compound B and the resin respectively, which is more beneficial for adjusting the proportion of the dyeing compound A and the film-forming resin, thereby effectively controlling the viscosity and matting coefficient of the coating composition, ensuring the reflection effect of the resulting anti-reflection layer at a low thickness, and obtaining stronger storage stability.

[0057] The matrix resin is selected from at least one of an acrylic resin, a polyimide resin, a phenolic epoxy resin, and a polysiloxane resin, and the above resins are all non-matting resins.

[0058] In the present invention, the dyeing compound B is an aromatic compound having absorption for a target wavelength, wherein the target wavelength includes a wavelength of 100 nm to 400 nm, for example, a wavelength of 365 nm.

[0059] For example, the dyeing compound B can be benzene and its derivatives with a single benzene ring structure, anthracene and its derivatives with a multi-benzene ring structure, and cinnamic acid esters, which achieve an anti-reflection effect by absorbing light of a specific wavelength.

[0060] Exemplarily, the dyeing compound B can be anthracene and its derivatives (9-anthracene carboxylic acid, 9-vinyl anthracene, 9-hydroxymethyl anthracene, etc.), benzene and its derivatives, rhodamine, eosin, perylene and its derivatives (3,4,9,10-perylene tetracarboxylic dianhydride, etc.), cinnamic acid ester compounds (methyl cinnamate, ethyl cinnamate, methyl 4-hydroxy-3-methoxycinnamate, etc.).

[0061] The matting resin composed of the above matrix resin and dyeing compound B, as a film-forming resin, provides good film-forming properties and high light absorption properties, absorbs light during the lithography process, and avoids the deformation of the lithography pattern caused by light reflection or diffraction.

[0062] In some examples, when preparing the matting resin, the molar ratio of the matrix resin to the dyeing compound B can be 3:1 to 6:1. The matrix resin and the dyeing compound B with the set molar ratio can be reacted at a temperature of 110°C to 150°C for 8 hours to 24 hours, and after separation treatment, the matting resin is prepared.

[0063] Exemplarily, the non-matting resin is selected from at least one of acrylic resin, polyimide resin, phenolic epoxy resin, and polysiloxane resin.

[0064] The above non-matting resin is a film-forming resin, which can be used to regulate the viscosity of the anti-reflection coating composition system and achieve a film thickness that can be matched at different rotation speeds.

[0065] In some examples, the weight-average molecular weight Mw of the non-matting resin is 5000 - 20000, further 12000 - 15000. The proportion of the non-matting resin can be adjusted according to its weight-average molecular weight and viscosity so that the viscosity of the anti-reflection coating composition is 100 cP - 120 cP.

[0066] In some examples, the weight-average molecular weight Mw of the matrix resin is 5000 - 15000, further 8000 - 15000, and further 8000 - 10000. The proportion of the matrix resin can be adjusted according to its weight-average molecular weight and viscosity so that the viscosity of the anti-reflection coating composition is 100 cP - 120 cP.

[0067] In some implementation manners, the dyeing compound A is an aromatic compound that absorbs at a target wavelength, where the target wavelength includes a wavelength of 100 nm to 400 nm, for example, a wavelength of 365 nm.

[0068] In some implementation manners, the dyeing compound A is a cinnamate compound. Exemplarily, the cinnamate compound includes at least one of methyl cinnamate, ethyl cinnamate, and methyl 4-hydroxy-3-methoxycinnamate.

[0069] By adding the above dyeing compound A and adjusting its ratio in the anti-reflection coating composition, the n value and k value of the coating formed by the anti-reflection coating composition can be adjusted. Among them, the n value is the refractive index of the anti-reflection layer, and the k value is the extinction coefficient.

[0070] In the embodiments of the present invention, the catalyst includes at least one of organic acid catalysts and organic acid salt catalysts. Exemplarily, the organic acid catalysts include hexafluorophosphoric acid, hexafluoroantimonic acid, p-toluenesulfonic acid, etc.

[0071] The organic acid salt catalyst among the above catalysts can generate protonic acid under heating conditions to promote the curing reaction of the resin and the crosslinking agent. If the catalyst content is too high, it will cause the colloid to undergo a crosslinking reaction due to the generation of acid during storage, resulting in poor storage stability. If the catalyst content is too low, the crosslinking reaction is incomplete, leading to the precipitation of excess solvent. Therefore, the content of the catalyst is 0.1 wt% - 1.5 wt%.

[0072] In some examples, the catalyst is an organic acid salt catalyst, and the organic acid salt catalyst includes at least one of p-toluenesulfonate, naphthalenesulfonate, fluoroantimonate, and hexafluorophosphate. And, the salts involved can be sodium salts, potassium salts, or amine salts.

[0073] Using the above organic acid salts as catalysts, this is because the organic acid salt catalysts are stable at room temperature and do not initiate the crosslinking reaction of the polymers in the system, improving the storage stability of the antireflection coating composition. When the antireflection coating composition is applied, the organic acid salt catalyst decomposes into acid and base at high temperature after baking, and the acid therein can catalyze the crosslinking reaction.

[0074] The crosslinking agent plays a crosslinking role in the antireflection coating composition. In some examples, the crosslinking agent has functional groups capable of reacting with groups (such as hydroxyl groups, carboxyl groups, etc.) in the matting resin.

[0075] Some suitable crosslinking agents can be at least one of melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, and urea-formaldehyde resin. For example, the melamine-formaldehyde resin includes melamine-formaldehyde resin, and the benzoguanamine-formaldehyde resin includes benzoguanamine-formaldehyde resin.

[0076] The solvent plays a role in dispersing the resin, achieving the coating function and improving the uniformity. Exemplarily, the solvent includes but is not limited to: at least one of ethyl lactate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclopentanone, cyclohexanone, and methyl ether. When two or more solvents are used, the solubility of the solid components can be enhanced.

[0077] For example, in some examples, cyclohexanone and propylene glycol monomethyl ether with a mass ratio of 1:2 to 2:1; ethyl lactate and propylene glycol monomethyl ether with a mass ratio of 1:2 to 2:1; propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate with a mass ratio of 1:2 to 2:1.

[0078] In summary, based on the anti-reflection coating composition provided by the embodiments of the present invention, the matting resin and the non-matting resin crosslink and cure with the crosslinking agent under the action of a catalyst, capable of forming a uniform anti-reflection layer, strongly absorbing radiation in the range of 100 nm - 400 nm, especially having high light absorption performance at a wavelength of 365 nm. For the anti-reflection coating based on this anti-reflection coating composition, the extinction coefficient k value reaches above 0.25, the refractive index n value is 1.6 - 1.8, having a relatively high plasma etching rate, and can be paired with a relatively thin (0.2 μm - 2 μm) photoresist layer to open a window through etching, thereby processing the substrate.

[0079] For the anti-reflection coating based on this anti-reflection coating composition, it can be matched with a photoresist having an exposure light source of 100 nm - 400 nm, especially 365 nm, greatly eliminating the standing wave effect and the notch effect in the I-line lithography process, and having a reflectivity close to 0 at a film thickness of 150 nm, improving the control of the critical dimension CD, thereby improving the resolution.

[0080] Due to its formulation composition, the anti-reflection coating composition provided by the embodiments of the present invention enables the prepared anti-reflection layer to have good elution resistance. No staining compound A is precipitated after being soaked in a solvent, and the n value, k value, and film thickness value remain unchanged before and after elution. Moreover, the anti-reflection layer formed by this anti-reflection coating composition also has good storage stability, with a storage period of up to 9 - 12 months, being immiscible with the top photoresist. When paired with the corresponding photoresist, the critical dimension CD can optimally reach 0.25 μm.

[0081] According to the second aspect of the embodiments of the present invention, there is also provided an application of any one of the above-mentioned anti-reflection coating compositions, for example, this application can be the application of the anti-reflection coating composition in the lithography process.

[0082] According to the third aspect of the embodiments of the present invention, there is also provided a coating structure, which includes: a substrate, a bottom anti-reflection layer, and a photoresist layer; the bottom anti-reflection layer is formed on the substrate by any one of the above-mentioned anti-reflection coating compositions; the photoresist layer is formed on the bottom anti-reflection layer.

[0083] The coating structure provided by the embodiments of the invention has all the advantages of the above-mentioned anti-reflection coating composition.

[0084] Exemplarily, the bottom anti-reflection layer can absorb radiation with a wavelength of 100 nm - 400 nm. Herein, the "radiation" involved in the embodiments of the present invention is all light radiation.

[0085] The present invention will be further specifically described below through specific embodiments. It is necessary to point out here that the following embodiments are only used to further illustrate the present invention and cannot be construed as limiting the protection scope of the present invention. Some non-essential improvements and adjustments made by those skilled in the art based on the content of the present invention above still fall within the protection scope of the present invention.

[0086] An antireflection coating composition is provided through the following respective embodiments and respective comparative examples, and the formulations of these antireflection coating compositions are shown in Tables 1 - 6 below.

[0087] The phenolic epoxy resin involved in the following antireflection coating composition is prepared by reacting bisphenol F phenolic resin with epichlorohydrin, and its weight-average molecular weight Mw is 10,000.

[0088] The acrylic resin involved in the following antireflection coating composition can be prepared by the following method: A monomer mixture composed of 30 parts by weight of methyl methacrylate, 68 parts by weight of glycidyl methacrylate, and 2 parts by weight of azobisisobutyronitrile (AIBN) is mixed evenly with 200 parts by weight of propylene glycol methyl ether and reacted at 80 °C for 7 h to prepare the acrylic resin.

[0089] The acrylic-modified resin involved in the following antireflection coating composition can be prepared by the following method: A monomer mixture composed of 30 parts by weight of methyl methacrylate, 68 parts by weight of glycidyl methacrylate, and 2 parts by weight of azobisisobutyronitrile (AIBN) is made, the monomer mixture is mixed evenly with 200 parts by weight of propylene glycol methyl ether, and reacted at 80 °C for 7 h to prepare the acrylic resin. Then, 20 parts by weight of methyl 4-hydroxy-3-methoxycinnamate is continuously added to the reaction system, the temperature is raised to 130 °C and reacted for 12 h, and the reaction is stopped. The reaction system is subjected to water washing, drying and other treatments to prepare the dried acrylic-modified resin.

[0090] Table 1

[0091]

[0092] Table 2

[0093]

[0094] Table 3

[0095]

[0096] Table 4

[0097]

[0098] Table 5

[0099]

[0100] Table 6

[0101]

[0102] Using the antireflection coating compositions provided in the above embodiments and comparative examples, the antireflection layers were prepared respectively, and the preparation process was as follows: The antireflection coating composition was spin-coated on a 4-inch substrate silicon wafer and baked on a hot plate at 205 °C for 60 s to complete curing and crosslinking, thereby forming an antireflection layer on the silicon wafer, and the whole was used as a test sample. Among them, the thermal decomposition temperature of the antireflection layer was above 250 °C, and the decomposition temperature of the catalyst was above 180 °C. By making the baking temperature 205 °C, which was between 200 °C and 210 °C, at this temperature, it was sufficient to completely cure the film and obtain a stable antireflection layer.

[0103] The properties of the prepared multiple antireflection layers were tested as follows:

[0104] (1) An ellipsometer was used to measure the n value, k value and film thickness of each antireflection layer.

[0105] (2) Elution resistance verification: Each test sample was soaked in propylene glycol monomethyl ether (abbreviation: PM), propylene glycol monomethyl ether acetate (abbreviation: PMA), and ethyl lactate (abbreviation: EL) for 20 min respectively, then taken out and dried with an air gun.

[0106] The change range of the film thickness of each antireflection layer was judged. The smaller the change range, the higher the differential solubility after curing of the current antireflection layer, the less likely it was to dissolve in the basic solvent of the photoresist, and there was no mixing with the photoresist. The test results of the above properties are shown in Table 7.

[0107] Table 7

[0108]

[0109] The eluate obtained after the elution treatment was collected, and the absorbance of the eluate at a wavelength of 365 nm was measured using a UV spectrophotometer (UV). The test results are shown in Table 8.

[0110] Table 8

[0111]

[0112] Among them, if the dyeing compound A precipitates from the antireflection layer and enters the eluate, then the eluate will be measured by the UV spectrophotometer to have a certain absorbance at 365 nm, and thus an absorption peak will be formed in the obtained spectrogram.

[0113] The UV test curve of the PM eluate corresponding to Example 1 is shown in Figure 1, see the UV test curve of the PMA eluent corresponding to Example 1 Figure 2 , see the UV test curve of the EL eluent corresponding to Example 1 Figure 3 , from Figures 1-3 it can be seen that there is no absorption peak at a wavelength of 365 nm, indicating that no dye compound A precipitates in Example 1.

[0114] See the UV test curve of the PM eluent corresponding to Comparative Example 1 Figure 4 , and it has a relatively obvious absorption at 365 nm, which indicates that there is migrated dye compound A in the eluent.

[0115] As can be seen from Table 8, the elution resistance performance of the antireflection layers of Examples 1 - 3 is more excellent than that of Examples 4 - 5 and Comparative Example 1.

[0116] Test the storage stability of the antireflection coating compositions provided in the above Examples 1 - 5 and Comparative Example 1. The test method is to store the antireflection coating compositions in an environment of - 10°C - 40°C for a certain period of time, and then test whether the relevant performance parameters of the antireflection coating compositions fail. Among them, the evaluation parameters include: n value, k value, moisture content, particle size, metal ion content, etc.

[0117] During the evaluation process, if all parameters such as n, k, moisture content, particle size, and metal ion content are normal, it is regarded as passing the verification of the shelf life. If one item is unqualified, it is regarded as failing the verification. See Table 9 for the test results.

[0118] Table 9

[0119]

[0120] Test the etching rate ratio of the antireflection layers corresponding to the antireflection coating compositions provided in the above Examples 1 - 5 and Comparative Example 1. The test method is to spin - coat the antireflection coating composition on the surface of a 4 - inch silicon wafer substrate, bake it on a hot plate at 205°C for 60 s to complete curing and cross - linking, thereby forming an antireflection layer on the silicon wafer, and taking the whole as a test sample.

[0121] The film thickness of the anti-reflection layer was measured using a reflection type film thickness gauge. Also, dry etching was performed for 15 seconds using a plasma etcher NLD-570 with a plasma of a CF4 / O2 molar ratio of 2:1, and the film thickness of the etched anti-reflection layer was measured again. The difference before and after was the film thickness etched off. The test results are shown in Table 10. The etch rate ratio data in Table 10 was given relative to the I-line photoresist material (poly(p-hydroxystyrene)). The calculation method of the etch rate ratio was the thickness of the anti-reflection layer etched under the same conditions / the thickness of the photoresist material etched. The magnitude of the etch rate ratio of each anti-reflection layer was judged. The larger the etch rate ratio, the more excellent the rapid etching characteristics of the current anti-reflection layer, which could allow a shorter etching time, avoid excessive loss of the unexposed part of the photoresist film during the etching process, enable the image to be completely transferred to the substrate, and thus obtain a good photoresist pattern.

[0122] Table 10

[0123] test sample etch rate ratio Example 1 1.486 Example 2 1.481 Example 3 1.477 Example 4 1.478 Example 5 1.470 Comparative Example 1 1.456

[0124] The anti-reflection effects of the anti-reflection layer corresponding to the anti-reflection coating compositions provided in the above Examples 1-5 and Comparative Example 1 were tested at different film thicknesses. Specifically, the photoresist sidewall morphology was tested. The test method was as follows:

[0125] The anti-reflection coating composition was spin-coated on the surface of a 4-inch silicon wafer substrate and baked on a hot plate at 205 °C for 60 s to complete curing and crosslinking, thereby forming an anti-reflection layer on the silicon wafer, and its coating thickness was measured using an ellipsometer. Then, on the cured anti-reflection layer, the photoresist KX150 of Fikai Material was coated at a speed of 1200 rpm, baked at 120 °C for 200 s, and then exposed using an I-line light source exposure machine at 300 mj / cm 2 and developed for 70 s using a 2.38% mass concentration of tetramethylammonium hydroxide (TMAH) developer. The obtained section was observed for the morphology of the photoresist using a Hitachi scanning electron microscope SU8100. The results are shown in Table 11.

[0126] Table 11

[0127]

[0128]

[0129] Among them, the scanning electron microscope image of the test sample shown in Example 1 is shown in Figure 5 , and the scanning electron microscope image of the test sample shown in Example 2 is shown in Figure 6 . The test results show that after forming an anti-reflection layer using the anti-reflection coating composition provided in the examples of the present invention, the standing wave effect can be significantly eliminated.

[0130] Moreover, for the test samples shown in Example 1 and Example 2, comparative examples in which only photoresist is used without an antireflection layer are given respectively as Comparative Example 2 and Comparative Example 3. For the scanning electron microscope image of Comparative Example 2, see Figure 7 , and for the scanning electron microscope image of Comparative Example 3, see Figure 8 . The test results show that if the antireflection coating composition provided in the embodiments of the present invention is not used and only photoresist is arranged alone, there is an obvious standing wave effect.

[0131] The above is only for the convenience of those skilled in the art to understand the technical solutions of the present invention, and is not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An antireflection coating composition, characterized in that, The anti-reflection coating composition comprises the following components in mass percentages: 1 wt%-20 wt% of non-matte resin, 5 wt%-25 wt% of matte resin, 0.1 wt%-1.5 wt% of dyeing compound A, 0.1 wt%-1.5 wt% of catalyst, 0.2 wt%-1.5 wt% of crosslinking agent, 51 wt%-90 wt% of solvent; The matte resin is prepared by a chemical grafting reaction of a matrix resin and a dyeing compound B, and the matrix resin is selected from at least one of acrylic resin, polyimide resin, phenolic epoxy resin, and polysiloxane resin.

2. The anti-reflection coating composition according to claim 1, characterized in that, The non-matte resin is selected from at least one of acrylic resin, polyimide resin, phenolic epoxy resin, and polysiloxane resin.

3. The antireflection coating composition according to claim 1, characterized in that, The dyeing compound A is an aromatic compound that absorbs light of a target wavelength; The target wavelength includes wavelengths from 100 nm to 400 nm.

4. The antireflection coating composition according to claim 3, characterized in that, The dyeing compound A is a cinnamate compound, and the cinnamate compound is selected from at least one of methyl cinnamate, ethyl cinnamate, and methyl 4-hydroxy-3-methoxycinnamate.

5. The antireflection coating composition according to claim 1, wherein The dyeing compound B is an aromatic compound that absorbs light of a target wavelength; The target wavelength includes wavelengths from 100 nm to 400 nm.

6. The anti-reflection coating composition according to claim 5, characterized in that, The dyeing compound B includes at least one of anthracene and its derivatives, benzene and its derivatives, rhodamine, eosin, perylene and its derivatives, and cinnamate compounds.

7. The anti-reflection coating composition according to any one of claims 1-6, characterized in that, The weight-average molecular weight Mw of the non-matte resin is 5000-20000; The weight-average molecular weight Mw of the matrix resin is 5000-15000.

8. The antireflection coating composition according to any one of claims 1-7, characterized in that, The catalyst includes at least one of organic acid catalysts and organic acid salt catalysts.

9. The antireflection coating composition according to claim 8, characterized in that, The catalyst is an organic acid salt catalyst, and the organic acid salt catalyst includes at least one of p-toluenesulfonate, naphthalenesulfonate, fluoroantimonate, and hexafluorophosphate.

10. The antireflection coating composition according to any one of claims 1-9, characterized in that, The crosslinking agent includes at least one of melamine-formaldehyde resin, benzoguanamine-formaldehyde resin, and urea-formaldehyde resin.

11. Use of the anti-reflection coating composition according to any one of claims 1-10 in a lithography process.

12. A coating structure, characterized in that, The coating structure includes: a substrate, a bottom anti-reflection layer, and a photoresist layer; The bottom anti-reflection layer is formed on the substrate by the anti-reflection coating composition according to any one of claims 1-10; The photoresist layer is formed on the bottom anti-reflection layer.

13. The coating structure according to claim 12, wherein, The bottom anti-reflection layer can absorb radiation with a wavelength of 100 nm-400 nm.

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