Display device and method for manufacturing display device

Abstract

The invention relates to a display device and a method for manufacturing the same. A display device includes: a display panel including a plurality of light emitting regions and a plurality of non-light emitting regions alternately arranged with each other in a row direction and / or a column direction; a plurality of light emitting elements disposed in the light emitting area of the display panel and arranged in a plurality of rows and a plurality of columns; and a plurality of microkeys disposed in a non-light-emitting region between the light-emitting regions adjacent to each other in the row direction and / or the column direction.

Description

Technical Field

[0001] The present disclosure relates to a display device and a method of manufacturing a display device. More specifically, the present disclosure relates to a display device including LEDs (light emitting diodes) and a method of manufacturing a display device. Background Art

[0002] Display devices are applied to various electronic devices such as TVs, mobile phones, laptop computers, and tablet computers. For this reason, research on developing display devices that are thinner, lighter, and have lower power consumption is ongoing.

[0003] Among display devices, a self-emitting display device has a built-in light-emitting element or light source, and uses light generated from the built-in light-emitting element or light source to display information. A display device including a self-emitting element can be implemented to be thinner than a display device having a built-in light source, and can be implemented as a flexible display device that can be folded, bent, or curled.

[0004] A display device having a self-emitting element may include, for example: an organic light-emitting display device (OLED) including a light-emitting layer made of an organic material; or a micro LED display device (micro light-emitting diode display device) including a light-emitting layer made of an inorganic material. In this regard, an organic light-emitting display device does not require a separate light source. However, due to the material characteristics of the organic material that are vulnerable to moisture and oxygen, defective pixels easily occur in the organic light-emitting display device due to the external environment. On the contrary, a micro LED display device includes a light-emitting layer made of an inorganic material that is resistant to moisture and oxygen, and thus is not affected by the external environment. Therefore, compared with an organic light-emitting display device, the micro LED display device has high reliability and a long lifespan. Summary of the Invention

[0005] An object of the present disclosure is to provide a display device and a method of manufacturing a display device as described below, in which a transfer process of transferring a light-emitting element from a wafer to a donor substrate can be simplified to increase the production volume of the light-emitting element.

[0006] Another object of the present disclosure is to provide a display device and a method of manufacturing a display device as described below, in which both a light-emitting element and a micro bond can be transferred to a donor substrate using a single laser mask, and thus, the accuracy of the position where the light-emitting element is transferred to the donor substrate can be increased and thus the transfer accuracy can be improved. In addition, mask patterns designed based on various pitches can be applied to a single laser mask, thereby diversifying the mask model and thus increasing the lifespan of the laser mask.

[0007] Another object of the present disclosure is to provide a display device and a method for manufacturing a display device, in which a laser beam travels only until one of a plurality of mask patterns constituting a laser mask and one of a plurality of island patterns of a microbond are completely overlapped with each other, thereby preventing the microbond from being damaged by the laser beam.

[0008] One embodiment of the present disclosure provides a display device including: a display panel including light-emitting regions and non-light-emitting regions alternately arranged in a row direction and / or a column direction; a plurality of light-emitting elements provided in the light-emitting regions of the display panel and arranged in multiple rows and multiple columns; and a plurality of microbonds provided in the non-light-emitting regions between the light-emitting regions adjacent to each other in the row direction and / or the column direction.

[0009] Another embodiment of the present disclosure provides a method for manufacturing a display device, the method including: a first transfer step of transferring a plurality of light-emitting elements, a plurality of macro bonds, and a plurality of microbonds provided on a wafer to a donor substrate; providing a display panel including a plurality of light-emitting regions and a plurality of non-light-emitting regions alternately arranged in a row direction and / or a column direction; and a second transfer step of transferring the plurality of light-emitting elements and the plurality of microbonds from the donor substrate to the display panel, wherein the plurality of microbonds are transferred to the non-light-emitting regions between the adjacent light-emitting elements.

[0010] Another embodiment of the present disclosure provides a method for manufacturing a display device, the method including: providing a first donor substrate including a plurality of light-emitting elements emitting light of a first color, a second donor substrate including a plurality of light-emitting elements emitting light of a second color, and a third donor substrate including a plurality of light-emitting elements emitting light of a third color, wherein each of the first donor substrate, the second donor substrate, and the third donor substrate includes microbonds arranged in side regions of the corresponding plurality of light-emitting elements; and transferring the plurality of light-emitting elements and the microbonds on the first donor substrate, the second donor substrate, and the third donor substrate to each of a plurality of sets of regions of the display panel such that the light-emitting elements emitting different colors in each set of regions are arranged side by side in the row direction, wherein the display panel includes a plurality of light-emitting regions and a plurality of non-light-emitting regions alternately arranged in a row direction and / or a column direction, and wherein adjacent regions in the plurality of sets of regions overlap each other, and the microbonds in the overlapping regions are located in the non-light-emitting regions between the adjacent light-emitting elements.

[0011] According to an embodiment of the present disclosure, the number of times of scanning the wafer with a laser beam when transferring a plurality of light-emitting elements to a donor substrate can be reduced, so that the transfer process can be simplified, and thus the production amount of the light-emitting elements can be increased within the same processing operation time. The production energy can be reduced through such processing optimization.

[0012] According to an embodiment of the present disclosure, both the light-emitting element and the micro-bond can be transferred to the donor substrate using a single laser mask, and thus, the accuracy of the position where the light-emitting element is transferred to the donor substrate can be improved and thus the transfer precision can be improved. In addition, mask patterns designed based on various pitches can be applied to a single laser mask, diversifying the mask model and thus increasing the lifespan of the laser mask.

[0013] According to an embodiment of the present disclosure, the laser beam travels only until one of the mask patterns constituting the laser mask and one of the island patterns of the micro-bond completely overlap each other, thereby preventing the micro-bond from being damaged by the laser beam.

[0014] The effects of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

[0015] In addition to the above effects, the specific effects of the present disclosure are described together while describing the specific details for implementing the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a plan view of a wafer on which a plurality of light-emitting elements are arranged according to an embodiment of the present disclosure.

[0017] Figure 2 is along Figure 1 The sectional view taken along the cutting line 2-2.

[0018] Figure 3 is a plan view of the donor substrate before transferring a plurality of light-emitting elements to the donor substrate.

[0019] Figure 4 is a schematic diagram for showing a process of transferring a plurality of light-emitting elements provided on a wafer to a donor substrate.

[0020] Figure 5 is a diagram for showing a laser mask and a micro-bond mask.

[0021] Figures 6 to 16 is a diagram for showing a display device and a method for manufacturing a display device according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0022] Advantages and features of the present disclosure, and methods for realizing these advantages and features, will become apparent with reference to the embodiments and the accompanying drawings described in detail later. However, the present disclosure is not limited to the embodiments disclosed below, but may be implemented in various different forms. Therefore, these embodiments are described only to make the present disclosure complete and to fully inform those of ordinary skill in the art to which the present disclosure pertains of the scope of the present disclosure.

[0023] For simplicity and clarity of illustration, the elements in the accompanying drawings are not necessarily drawn to scale. The same reference numerals in different drawings denote the same or similar elements and thus perform similar functions. In addition, for simplicity of description, descriptions and details of well-known steps and elements are omitted. Further, in the following detailed description of the present disclosure, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be understood that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present disclosure. Examples of various embodiments are further illustrated and described below. It will be understood that the description herein is not intended to limit the claims to the specific embodiments described. Instead, it is intended to cover alternatives, modifications, and equivalents that may be included within the spirit and scope of the present disclosure as defined by the appended claims.

[0024] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the accompanying drawings for illustrating the embodiments of the present disclosure are illustrative, and the present disclosure is not limited thereto.

[0025] The terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the present disclosure. As used herein, the singular forms “a” and “an” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the terms “comprises,” “comprising,” “has,” and “having,” when used in this specification, specify the presence of the stated features, integers, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and / or portions thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one,” when following a list of elements, can modify the entire list of elements and not just individual elements in the list. When interpreting numerical values, errors or tolerances may occur even when there is no explicit description of errors or tolerances.

[0026] In addition, it will also be understood that when a first element or layer is referred to as being "on" a second element or layer, the first element can be disposed directly on the second element or can be indirectly disposed on the second element, wherein a third element or layer is disposed between the first element or layer and the second element or layer. It will be understood that when an element or layer is referred to as being "connected to" or "coupled to" another element or layer, the element or layer can be directly on, directly connected to, or coupled to the other element or layer, or there can be one or more intermediate elements or layers. In addition, it will also be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer can be the only element or layer between the two elements or layers, or there can also be one or more intermediate elements or layers.

[0027] In addition, as used herein, when a layer, film, region, plate, etc. is disposed "on" or "on top of" another layer, film, region, plate, etc., the former can be in direct contact with the latter, or another layer, film, region, plate, etc. can be disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is disposed directly "on" or "on top of" another layer, film, region, plate, etc., the former is in direct contact with the latter, and no other layer, film, region, plate, etc. is disposed between the former and the latter. In addition, as used herein, when a layer, film, region, plate, etc. is disposed "under" or "beneath" another layer, film, region, plate, etc., the former can be in direct contact with the latter, or another layer, film, region, plate, etc. can be disposed between the former and the latter. As used herein, when a layer, film, region, plate, etc. is disposed directly "under" or "beneath" another layer, film, region, plate, etc., the former is in direct contact with the latter, and no other layer, film, region, plate, etc. is disposed between the former and the latter.

[0028] In the description of temporal relationships, for example, the temporal precedence relationship between two events, such as "after", "subsequently", "before", etc., unless specified as "immediately after", "subsequently immediately", or "immediately before", another event may occur between these two events.

[0029] When a particular embodiment can be implemented differently, the functions or operations specified in a particular block can occur in an order different from the order specified in the flowchart. For example, depending on the functions or operations involved, two consecutive blocks can actually be executed substantially simultaneously, or the two blocks can be executed in the reverse order.

[0030] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers, and / or time periods, these elements, components, regions, layers, and / or time periods should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or time period from another element, component, region, layer, or time period. Thus, without departing from the spirit and scope of the present disclosure, the first element, component, region, layer, or time period described below may be referred to as the second element, component, region, layer, or time period.

[0031] When the implementation can be achieved differently, the functions or operations specified in a particular block may be executed in an order different from the order specified in the flowchart. For example, depending on the relevant functions or operations, two consecutive blocks may actually be executed substantially simultaneously, or these blocks may be executed in the reverse order.

[0032] The features of the various embodiments of the present disclosure may be partially or fully combined with each other and may be technically related or operable with each other. These embodiments may be implemented independently of each other and may also be implemented together in an associated relationship.

[0033] When interpreting a numerical value, unless it is explicitly described separately, the value is interpreted as including the error range.

[0034] It will be understood that when an element or layer is referred to as "connected to" or "coupled to" another element or layer, the element or layer may be directly on the other element or layer, directly connected to or coupled to the other element or layer, or there may be one or more intermediate elements or layers. Additionally, it will also be understood that when an element or layer is referred to as being "between" two elements or layers, the element or layer may be the only element or layer between the two elements or layers, or there may also be one or more intermediate elements or layers.

[0035] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs. It will also be understood that terms such as those defined in a common dictionary should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0036] As used herein, "embodiment", "example", "aspect", etc. should not be construed as making any described aspect or design superior to or better than other aspects or designs.

[0037] In addition, the term "or" means "inclusive or" rather than "exclusive or". That is, unless otherwise stated or clear from the context, the expression "x uses a or b" means any of the natural inclusive arrangements.

[0038] The terms used in the following description have been chosen as general and common terms in the relevant technical field. However, depending on the development and / or changes in technology, convention, the preference of those skilled in the art, etc., there may also be other terms in addition to these terms. Therefore, the terms used in the following description should not be construed as limiting the technical concept, but should be understood as examples of the terms for illustrating the embodiments.

[0039] In addition, in specific cases, the terms can be arbitrarily selected by the applicant, and in such cases, their detailed meanings will be described in the corresponding description period. Therefore, the terms used in the following description should not be understood only based on the name of the terms, but also based on the meaning of the terms and the content throughout the specific embodiments.

[0040] When describing the signal flow, for example, when a signal is transmitted from node A to node B, this may include the case where the signal is passed from node A to node B via another node, unless the phrase "immediately passed" or "directly passed" is used.

[0041] Throughout the present disclosure, unless otherwise stated, "A and / or B" means A, B, or A and B, and unless otherwise stated, "C to D" means C (including C) to D (including D).

[0042] "At least one" should be understood to include any combination of one or more of the listed components. For example, at least one of the first component, the second component, and the third component not only means the first component, the second component, or the third component, but also means all combinations of two or more of the first component, the second component, and the third component.

[0043] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. For ease of explanation, the scale of each component shown in the drawings is different from its actual scale, and thus, the present disclosure is not limited to the scale shown in the drawings.

[0044] Hereinafter, a display device according to each embodiment of the present disclosure will be described with reference to the drawings.

[0045] Figures 1 to 5 is a diagram for showing a display device according to an embodiment of the present disclosure and a method for manufacturing the display device. Specifically, Figure 1 is a plan view of a wafer on which a plurality of light-emitting elements are arranged according to an embodiment of the present disclosure. Figure 2 is along Figure 1Cross-sectional view taken along the cutting line 2-2 in Figure 3 is a plan view of a donor substrate before transferring a plurality of light-emitting elements to the donor substrate. Figure 4 is a schematic view for showing a process of transferring a plurality of light-emitting elements provided on a wafer to a donor substrate. Figure 5 is a view for showing a laser mask and a microbond mask.

[0046] Referring to Figures 1 to 5 , a plurality of light-emitting elements ED are formed on a wafer 100. The wafer 100 may be made of a material such as sapphire, silicon (Si), silicon carbide (SiC), or gallium arsenide (GaAs). However, embodiments of the present disclosure are not limited thereto.

[0047] Light-emitting elements ED may be formed on the wafer 100 using an epitaxial growth scheme. For example, an undoped semiconductor layer UNS1, a first semiconductor layer NS1, an active layer ACT, and a second semiconductor layer NS2 are sequentially grown on the wafer 100 to form a nitride semiconductor structure NST. The nitride semiconductor structure NST is cut into individual light-emitting element chips. Then, a first electrode E1 is provided on the first semiconductor layer NS1, and a second electrode E2 is provided on the second semiconductor layer NS2. Thus, light-emitting elements ED can be formed. Each of the first semiconductor layer NS1 and the second semiconductor layer NS2 may be made of a nitride semiconductor. For example, each of the first semiconductor layer NS1 and the second semiconductor layer NS2 may be made of a GaN-based semiconductor material.

[0048] Specifically, each of the first semiconductor layer NS1 and the second semiconductor layer NS2 may be a layer made of a material such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs) doped with an n-type or p-type impurity. The p-type impurity may be magnesium (Mg), zinc (Zn), beryllium (Be), etc., and the n-type impurity may be silicon (Si), germanium, tin (Sn), etc. However, embodiments of the present disclosure are not limited thereto.

[0049] The active layer ACT may have a single-layer or multi-quantum well (MQW) structure and may include, for example, a nitride-based semiconductor material such as indium gallium nitride (InGaN) or gallium nitride (GaN). The active layer ACT may be located on one side of the upper surface of the first semiconductor layer NS1, and the second semiconductor layer NS2 may be located on the active layer ACT.

[0050] The first electrode E1 may be provided on the exposed portion of the upper surface of the first semiconductor layer NS1 where the active layer ACT is not provided. The second electrode E2 may be provided on the second semiconductor layer NS2.

[0051] Each of the plurality of light-emitting elements ED is an element that can emit light by itself. Each of the plurality of light-emitting elements ED can emit red light, green light, or blue light. On a wafer 100, a plurality of light-emitting elements that emit light of the same color can be formed.

[0052] Each of the plurality of light-emitting elements ED can be an LED (light-emitting diode) or a micro-LED. However, the embodiments of the present disclosure are not limited thereto. Examples of the present disclosure in which the light-emitting element ED has a horizontal structure as shown in Figure 2 are described. However, the embodiments of the present disclosure are not limited thereto. For example, each of the plurality of light-emitting elements ED can include a vertical structure or a flip-chip structure.

[0053] The plurality of light-emitting elements ED formed on the wafer 100 are transferred from the wafer 100 to the Figure 3 donor substrate 105 in the first transfer process, and are transferred from the donor substrate 105 to the display panel in the second transfer process. In other words, the plurality of light-emitting elements ED are transferred from the wafer 100 to the donor substrate 105, and then from the donor substrate 105 to the display panel PN. Thus, the manufacturing process of the display device can be completed.

[0054] The first transfer process is a process of transferring the plurality of light-emitting elements ED from the wafer 100 to the donor substrate 105.

[0055] The wafer 100 can include an active region 10A and a peripheral region 10B surrounding the active region 10A. The active region 10A is a region where a plurality of light-emitting elements ED are formed, and the peripheral region 10B is a region where a plurality of alignment keys 15 are provided.

[0056] The plurality of light-emitting elements ED can be arranged in a matrix in a first direction (X-axis direction) and a second direction (Y-axis direction) in the active region 10A. Since the plurality of light-emitting elements ED are arranged in a matrix shape, the active region 10A can have a rectangular region. However, the embodiments of the present disclosure are not limited thereto. When the active region 10A has a rectangular region, the active region can include two opposite sides in the column direction and two opposite sides in the row direction.

[0057] The plurality of alignment keys 15 can include macro keys 11 and micro keys 13. The macro keys 11 can be provided at positions adjacent to each of the four corners of the active region 10A in the peripheral region 10B. For alignment accuracy, a plurality of macro keys 11 can be arranged. For example, the macro keys 11 can be provided at positions adjacent to each of the two opposite corners in the row direction of the active region 10A in each of the two opposite portions in the column direction of the peripheral region 10B of the wafer 100.

[0058] The macro key 11 can be used to align the wafer 100 and the donor substrate 105 with each other. The micro key 13 can be used to align the donor substrate 105 and the display panel with each other. Two micro keys 13 can be provided on each of two opposite portions in the column direction (Y direction) of the peripheral region 10B. The two micro keys 13 can be respectively provided at two opposite positions in the row direction (X direction) of each of the two opposite portions in the column direction of the peripheral region 10B. For alignment accuracy, a plurality of micro keys 13 can be provided. For example, the micro key 13 can include a first micro key 13a and a second micro key 13b, and the first micro key 13a and the second micro key 13b are respectively provided at two opposite positions in the row direction (X direction) of each of the two opposite portions in the column direction (Y direction) of the peripheral region 10B. The first micro key 13a and the second micro key 13b can be spaced apart from each other by a predetermined pitch in the row direction (X direction).

[0059] When a plurality of light-emitting elements ED formed on the wafer 100 are transferred to the donor substrate 105, the micro key 13 can be transferred to the donor substrate 105. The macro key 11 and the micro key 13 can be formed on the wafer 100 in the process of forming a plurality of light-emitting elements ED on the wafer 100. When the macro key 11 and the micro key 13 are formed on the wafer together with a plurality of light-emitting elements ED, each of the macro key 11 and the micro key 13 can include at least some of the same materials as the materials constituting the light-emitting element ED. In another example, the macro key 11 and the micro key 13 can be formed in a process separate from the process of forming the light-emitting element ED.

[0060] The macro key 11 and the micro key 13 can be formed to have different shapes and sizes. For example, the macro key 11 can have a circular shape, while the micro key 13 can have a rectangular shape. However, the embodiments of the present disclosure are not limited thereto. In addition, the macro key 11 can have a relatively larger size than the size of the micro key 13.

[0061] Referring to Figure 3 , the donor substrate 105 can include a base substrate 17, an adhesive layer 18, and a plurality of posts 16. The base substrate 17 supports the adhesive layer 18 and the plurality of posts 16 thereon, and can be made of a hard material. The adhesive layer 18 provided on the base substrate 17 can fix a plurality of light-emitting elements ED transferred from the wafer 100 to the donor substrate 105 to the donor substrate 105. The adhesive layer 18 can be made of, for example, an elastic material such as polydimethylsiloxane (PDMS), an epoxy resin, or an acrylic resin. However, the embodiments of the present disclosure are not limited thereto.

[0062] The plurality of posts 16 may include a first post 14, a second post 12, and a third post D_13a. Some of the plurality of posts 16 (e.g., the first post 14 and the second post 12) may have a shape protruding from the adhesive layer 18 and may be made of the same material as the material of the adhesive layer 18. In one example, some of the plurality of posts 16 (e.g., the first post 14 and the second post 12) may be integrated with the adhesive layer 18.

[0063] The first post 14 may include a plurality of posts disposed on an inner region of the adhesive layer 18 and arranged in a matrix in the X-axis direction as a first direction and the Y-axis direction as a second direction. Each of the plurality of light-emitting elements ED to be transferred to the display panel may be transferred to each of the plurality of first posts 14. In one example, each light-emitting element ED may be positioned in a manner corresponding to each first post 14.

[0064] The second post 12 may include a plurality of second posts 12 respectively disposed at the corners of the adhesive layer 18. Each of the plurality of second posts 12 may be aligned with each of the macro keys 11 of the wafer 100 (see Figure 1 ).

[0065] The third post D_13a may include a plurality of third posts D_13a that may be disposed on two opposite portions in the column direction (Y direction) of the base substrate 17. Two third posts D_13a may be disposed at two opposite positions in the row direction (X direction) of each of the two opposite portions in the column direction of the base substrate 17. That is, each of the plurality of third posts D_13a may be aligned with each of the micro keys 13 of the wafer 100 (see Figure 1 ). Each of the micro keys 13 of the wafer 100 may be transferred to each of the plurality of third posts D_13a.

[0066] Referring to Figure 4 and Figure 3 , after the wafer 100 and the donor substrate 105 are aligned with each other, a first transfer process is performed to transfer the plurality of light-emitting elements ED on the wafer 100 to the donor substrate 105. For ease of explanation, Figure 4 only the wafer 100 is shown.

[0067] The first transfer process may be performed using an LLO (laser lift-off) scheme. Specifically, in a state where the wafer 100 and the donor substrate 105 (see Figure 3 ) are positioned to face each other, a laser beam is irradiated onto the plurality of light-emitting elements ED to be transferred to the donor substrate 105. The plurality of light-emitting elements ED onto which the laser beam has been irradiated may be separated from the wafer 100 and then respectively adhered to the plurality of first posts 14 of the donor substrate 105.

[0068] In this regard, the plurality of micro-bonds 13a and 13b of the wafer 100 together with the light-emitting element ED can be transferred to the donor substrate 105. To this end, a laser beam is irradiated onto the plurality of micro-bonds 13a and 13b to be transferred to the donor substrate 105. The plurality of micro-bonds 13a and 13b irradiated by the laser beam can be separated from the wafer 100 and respectively adhered to the plurality of third posts D_13a of the donor substrate 105.

[0069] In one example, in the first transfer scheme using the laser lift-off scheme, the number of times the laser beam scans the wafer may affect the yield of the light-emitting element. For example, as the number of times the laser beam scans the wafer increases, the time taken to peel off the light-emitting element increases, resulting in a reduction in the time during which the processing equipment can operate and thus a reduction in the production volume of the light-emitting element. The number of times the laser beam scans the wafer may be affected by the length of the laser beam.

[0070] Referring back to Figure 4 , in the first transfer scheme using the laser lift-off scheme, the laser beam LB scans the wafer 100. Specifically, one side end of the wafer 100 in the first row can be the first scan starting point, and the other side end of the wafer in the first row opposite to the one side end can be the first scan ending point. In the scheme where the laser beam LB scans the wafer, the laser beam LB can travel in the X-axis direction as the first direction from the first scan starting point and can reach the first scan ending point. This is the first scan.

[0071] Next, the laser beam LB travels a predetermined distance in the Y-axis direction as the second direction and reaches the second scan starting point in the second row, and travels from it in the first direction and reaches the second scan ending point in the second row. This is the second scan. In other words, the laser scan can be performed in such a way that the laser beam LB irradiates the wafer while traveling from the scan starting point to the scan ending point and then returns to the scan starting point in the subsequent row.

[0072] In the scheme of transferring the plurality of micro-bonds 13a and 13b of the wafer 100 together with the light-emitting element ED to the donor substrate 105, the active region 10A provided with the light-emitting element ED and the peripheral region 10B provided with the micro-bonds 13a and 13b can be transferred to the donor substrate 105 in a separate manner. Therefore, the number of times the laser beam LB scans the wafer 100 increases. For example, the cycle CSC1 in which the laser beam LB scans the wafer 100 in the active region 10A can include four scans. Since the peripheral region 10B provided with the micro-bonds 13a and 13b is transferred separately, the number of times the laser beam LB scans the peripheral region 10B can be two (two KSC1). Therefore, the first transfer scheme using the laser lift-off scheme requires at least 6 times as the number of times the laser beam LB scans the wafer 100.

[0073] Referring toFigure 4 and Figure 5 , Figure 5 In (a) of Figure 5 , the first laser mask MPT arranged in a pattern of irradiating the laser beam LB is used alone to simultaneously transfer a plurality of light-emitting elements ED from the wafer 100 to the donor substrate 105. In addition, Figure 5 in (b) of Figure 5 , the second laser mask 13M is used alone to transfer the micro-bond 13 to the donor substrate.

[0074] In the first transfer process, the laser beam LB scans the active region 10A provided with the light-emitting element ED and the peripheral region 10B provided with the micro-bonds 13a and 13b, respectively. First, using the first laser mask MPT, the laser beam LB scans the active region 10A to separate the light-emitting element ED from the wafer 100, and then transfers the light-emitting element ED to the donor substrate 105. Next, the first laser mask MPT is replaced with the second laser mask 13M, and then a further transfer process is performed on the peripheral region 10B to transfer the micro-bond 13 to the donor substrate 105. Therefore, it takes additional time to replace the first laser mask MPT with the second laser mask 13M. In addition, as the first transfer process is repeated, tolerances occur in terms of transfer position accuracy and transfer precision. For example, when two types of laser masks such as the first laser mask MPT and the second laser mask 13M are used, due to the process of replacing the first laser mask MPT with the second laser mask 13M during the laser lift-off process, the position may shift, resulting in a decrease in the accuracy of the position to which the light-emitting element ED has been transferred, and thus a decrease in transfer precision.

[0075] In addition, even when a plurality of patterns of various shapes are introduced so that one laser mask can support multiple models, there may be a limit to the number of models that can be introduced to the laser mask.

[0076] Therefore, a method is needed to transfer a plurality of light-emitting elements ED and micro-bonds 13 to the donor substrate 105 while reducing the number of times the laser beam scans the wafer. Hereinafter, it will be described with reference to the drawings.

[0077] Figures 6 to 16 is a diagram for showing a display device and a method for manufacturing the display device according to another embodiment of the present disclosure. Specifically, Figure 6 is a plan view of a wafer on which a plurality of light-emitting elements are arranged according to another embodiment of the present disclosure. Figure 7 is a plan view of a donor substrate before transferring a plurality of light-emitting elements to the donor substrate according to another embodiment of the present disclosure. Figure 8 and Figure 9 are schematic diagrams for showing a process of transferring a plurality of light-emitting elements provided on a wafer to a donor substrate. Figure 10 showsFigure 9 An enlarged plan view of region 9.

[0078] Figure 11 It is a timing chart showing the operation of scanning a wafer with a laser beam according to a laser lift-off scheme. Figure 12 It is a plan view showing a first donor substrate onto which a plurality of first light-emitting elements have been transferred. Figure 13 It is a plan view showing a second donor substrate onto which a plurality of second light-emitting elements have been transferred. Figure 14 It is a plan view showing a third donor substrate onto which a plurality of third light-emitting elements have been transferred.

[0079] Figure 15 It is a schematic cross-sectional view for showing a process of transferring a plurality of light-emitting elements provided on a donor substrate to a display panel PN. Figure 16 It is a plan view showing a display panel onto which a plurality of light-emitting elements have been transferred.

[0080] Referring to Figure 6 , a plurality of light-emitting elements ED are formed on a wafer 200. The wafer 200 can be made of a material such as sapphire, silicon (Si), silicon carbide (SiC), or gallium arsenide (GaAs). However, embodiments of the present disclosure are not limited thereto. Each of the plurality of light-emitting elements ED formed on the wafer 200 can have the same configuration as the light-emitting element ED in Figure 2 . Each of the plurality of light-emitting elements ED can be an LED or a micro-LED, and can have a horizontal, vertical, or flip-chip structure.

[0081] The plurality of light-emitting elements ED formed on the wafer 200 are transferred from the wafer 200 to a donor substrate 300 in a first transfer process, and are transferred from the donor substrate 300 to a display panel PN in a second transfer process (see Figure 15 ). In other words, the plurality of light-emitting elements ED are transferred from the wafer 200 to the donor substrate 300, and then from the donor substrate 300 to the display panel PN (see Figure 15 ). Thus, the manufacturing process of the display device can be completed.

[0082] The wafer 200 can include an active region 20A and a peripheral region 20B surrounding the active region 20A. The active region 20A is a region where a plurality of light-emitting elements ED are formed, and the peripheral region 20B is a region where a plurality of alignment keys 25 are provided.

[0083] A plurality of light-emitting elements ED may be arranged in a matrix in a first direction (X-axis direction) and a second direction (Y-axis direction) in the active region 20A. Since the plurality of light-emitting elements ED are arranged in a matrix shape, the active region 20A may have a rectangular region. However, embodiments of the present disclosure are not limited thereto. When the active region 20A has a rectangular region, the active region may include two opposite sides in the column direction and two opposite sides in the row direction. In this regard, the first direction may be referred to as the width direction or the row direction of the wafer, and the second direction may be referred to as the length direction or the column direction of the wafer.

[0084] The plurality of alignment keys 25 may include macro keys 21 and micro keys 23.

[0085] The macro keys 21 may be provided at positions adjacent to each of the four corners of the active region 20A in the peripheral region 20B. For alignment accuracy, a plurality of macro keys 21 may be arranged. For example, the macro keys 21 may be provided at positions adjacent to each of the two opposite corners in the row direction of the active region 20A in each of the two opposite portions in the column direction of the peripheral region 20B of the wafer. The macro keys 21 may be used to align the wafer 200 and the donor substrate 300 with each other.

[0086] The micro keys 23 may be provided in each of the left and right portions of the active region 20A. In the first transfer process using a laser beam, the left and right portions of the active region 20A may be arranged in the scanning direction of the laser beam.

[0087] For alignment accuracy, a plurality of micro keys 23 may be provided. For example, the micro keys 23 may include a first micro key 23a and a second micro key 23b, and the second micro key 23b is arranged at a predetermined interval from the first micro key 23a in the length direction of the wafer 200. In Figure 6 , two micro keys 23 may be provided on each of the two opposite portions in the row direction (X direction) of the peripheral region 20B. The two micro keys 23 may be respectively provided at two opposite positions in the column direction (Y direction) of each of the two opposite portions in the row direction of the peripheral region 20B. For example, the micro keys 23 may include a first micro key 23a and a second micro key 23b, and the first micro key 23a and the second micro key 23b are respectively provided at two opposite positions in the column direction (Y direction) of each of the two opposite portions in the row direction (X direction) of the peripheral region 20B. The first micro key 23a and the second micro key 23b may be spaced apart from each other by a predetermined distance in the column direction (Y direction).

[0088] More specifically, one period of the laser beam scanning the active region 20A consists of four scanning times. In this regard, one first micro-key 23a can be provided at the first scanning start point where the first scanning begins, and another first micro-key 23a can be provided at the first scanning end point where the first scanning ends. Additionally, one second micro-key 23b can be provided at the third scanning start point where the third scanning begins, and another second micro-key 23b can be provided at the third scanning end point where the third scanning ends. A description thereof will continue in Figure 9 later.

[0089] The macro-key 21 and the micro-keys 23 can be formed on the wafer 200 during the process of forming a plurality of light-emitting elements ED on the wafer 200. The macro-key 21 and the micro-keys 23 can be formed to have different shapes and sizes. For example, the macro-key 21 can have a circular shape. However, the embodiments of the present disclosure are not limited thereto. The macro-key 21 can be embodied as a single pattern including a circular shape.

[0090] The micro-keys 23 can have an array structure to improve alignment accuracy. For example, each of the first micro-key 23a and the second micro-key 23b can be embodied as a set of a plurality of island patterns 23M arranged in a matrix in a first direction (e.g., the X-axis direction) and a second direction (e.g., the Y-axis direction). Therefore, each of the first micro-key 23a and the second micro-key 23b can be patterned to be formed as an arrangement of island patterns. Each of the respective island patterns 23M constituting each of the first micro-key 23a and the second micro-key 23b can have a circular shape. However, the embodiments of the present disclosure are not limited thereto.

[0091] In addition, the size of one of the plurality of island patterns 23M constituting the micro-key 23 can be at least equal to or smaller than the size of the light-emitting element ED.

[0092] When the plurality of light-emitting elements ED formed on the wafer 200 are transferred to the donor substrate 300 (see Figure 7 ), the micro-keys 23 can be transferred to the donor substrate 300. The macro-key 21 and the micro-keys 23 can be formed on the wafer 200 during the process of forming a plurality of light-emitting elements ED on the wafer 200. When the macro-key 21 and the micro-keys 23 are formed on the wafer together with the plurality of light-emitting elements ED, each of the macro-key 21 and the micro-keys 23 can include at least some of the same materials as those of the materials constituting the light-emitting element ED. In another example, the macro-key 21 and the micro-keys 23 can be formed in a process separate from the process of forming the light-emitting element ED.

[0093] The micro-bond 23 is composed of a plurality of island patterns 23M densely arranged in an array form. Therefore, there is a possibility that foreign matter may be generated during the second transfer process. More specifically, the micro-bond 23 is composed of a plurality of island patterns 23M densely arranged in an array form, such that the epitaxial layer of the wafer 200 in the area of the micro-bond 23 is not completely removed during the laser lift-off process. Therefore, the remaining portion of the epitaxial layer in the micro-bond area can be transferred to the display panel PN. Accordingly, foreign matter is generated during the second transfer process of transferring the light-emitting element ED to the display panel PN. To this end, according to an embodiment of the present disclosure, in the process of forming the micro-bond 23, a part of the epitaxial layer of the wafer 200 exposed between adjacent island patterns 23M is removed in the etching process. This can prevent the epitaxial layer in the micro-bond 23 from acting as foreign matter during the second transfer process of the light-emitting element ED from the donor substrate to the display panel PN.

[0094] Referring to Figure 7 , the donor substrate 300 may include a base substrate 305, an adhesive layer 310, and a plurality of posts 325. In one example, the donor substrate 300 may have a plurality of posts 325 disposed on the base substrate 305. The base substrate 305 supports the adhesive layer 310 and the plurality of posts 325 thereon, and may be made of a hard material. The adhesive layer 310 disposed on the base substrate 305 may fix the plurality of light-emitting elements ED transferred from the wafer 200 to the donor substrate 300 to the donor substrate 300.

[0095] The base substrate 305 may include a transfer area and a non-transfer area. The transfer area may be an area on which a plurality of posts 325 are disposed. The transfer area may be an area to which the plurality of light-emitting elements ED and the micro-bond 23 are transferred. The non-transfer area may be an area to which the light-emitting elements ED and the micro-bond 23 are not transferred, and an area on which posts for aligning the wafer 200 and the donor substrate 300 with each other are disposed.

[0096] Each of the plurality of posts 325 may have a shape protruding from the adhesive layer 310, and may be made of the same material as the material of the adhesive layer 310. In one example, the plurality of posts 325 may be integrated with the adhesive layer 310. The plurality of posts 325 may include a first post 315, a second post 313, and a third post 320.

[0097] The first post 315 may include a plurality of posts disposed on the inner area of the adhesive layer 310 and arranged in a matrix manner in the X-axis direction as the first direction and the Y-axis direction as the second direction. In this regard, the first direction may be referred to as the width direction or the row direction of the donor substrate 300, and the second direction may be referred to as the length direction or the column direction of the donor substrate 300.

[0098] To be transferred to the display panel PN (refer toFigure 15 ) Each of the plurality of light-emitting elements ED can be transferred to each of the plurality of first posts 315. In one example, each light-emitting element ED can be positioned in a manner corresponding to each first post 315. Adjacent first posts 315 can be arranged to be spaced apart from each other by a first width P1. The first width P1 can be 1 pixel pitch.

[0099] The second posts 313 can include a plurality of second posts 313 respectively provided at positions adjacent to the corners of the adhesive layer 310. Each of the plurality of second posts 313 can be positioned in a manner corresponding to each of the macro keys 21 of the wafer 200 (see Figure 6 ).

[0100] Each of the plurality of third posts 320 can be positioned in a manner corresponding to each of the micro keys 23 of the wafer 200 (see Figure 6 ). In Figure 7 , two third posts 320 can be provided on each of two opposite portions in the row direction (X direction) of the region of the adhesive layer 310. The two third posts 320 can be respectively provided at two opposite positions in the column direction (Y direction) of each of the two opposite portions in the row direction of the region of the adhesive layer 310. Each of the plurality of micro keys 23 of the wafer 200 can be transferred to each of the plurality of third posts 320 provided on the donor substrate 300. In the second transfer process, the micro keys 23 respectively transferred to the plurality of third posts 320 and the light-emitting elements ED respectively transferred to the plurality of first posts 315 can be transferred to the display panel. Therefore, it is important that the plurality of micro keys 23 are arranged so as not to interfere with the light-emitting elements ED transferred to the display panel PN.

[0101] For this purpose, the plurality of third posts 320 according to another embodiment of the present disclosure are spaced apart from the outermost first post 315 closest to the third posts 320 among the first posts 315 by a second width P2. The second width P2 can be greater than the first width P1. For example, the second width P2 can be a rational number (greater than 1) times the first width P1 (e.g., 1.5 times, 2 times, 2.5 times, 3 times, etc.).

[0102] The donor substrate 300 can include a plurality of donor substrates. For example, the plurality of donor substrates can include a first donor substrate for transferring a plurality of light-emitting elements ED that emit light of a first color, a second donor substrate for transferring a plurality of light-emitting elements ED that emit light of a second color, and a third donor substrate for transferring a plurality of light-emitting elements ED that emit light of a third color. In this regard, the first color, the second color, and the third color can be red, green, and blue, respectively.

[0103] Refer to Figure 8 and Figure 9, the wafer 200 and the donor substrate 300 are placed in a processing apparatus for laser lift-off processing such that the wafer 200 is located on top of the donor substrate 300. The plurality of pillars 325 on the donor substrate 300 and the light-emitting elements ED and micro-bonds 23 of the wafer 200 can be arranged to face each other.

[0104] After the wafer 200 and the donor substrate 300 are aligned with each other, a first transfer process is performed to transfer the plurality of light-emitting elements ED on the wafer 200 to the donor substrate 300. Refer to Figure 8 , in the first transfer process, the processing apparatus irradiates a laser beam to the plurality of light-emitting elements ED to be transferred from the back surface of the wafer 200 to the donor substrate 300 as indicated by the arrow. The plurality of light-emitting elements ED irradiated with the laser beam can be separated from the wafer 200 and then can be respectively adhered to the plurality of first pillars 315 of the donor substrate 300.

[0105] At this time, while the light-emitting elements ED are respectively transferred to the plurality of first pillars 315 of the donor substrate 300, the plurality of micro-bonds 23 of the wafer 200 can be respectively transferred to the third pillars 320 of the donor substrate 300.

[0106] Refer to Figure 9 , the first transfer process may include scanning the wafer 200 with a laser beam LB. For ease of explanation, Figure 9 only the wafer 200 is shown.

[0107] Specifically, in the first transfer scheme using a laser lift-off scheme, the laser beam LB scans the wafer 200. Specifically, one side end of the wafer 200 in the first row may be the first scanning start point, and the other side end of the wafer in the first row opposite to the one side end may be the first scanning end point. In the scheme where the laser beam LB scans the wafer, the laser beam LB can travel in the X-axis direction as the first direction from the first scanning start point and can reach the first scanning end point. This is the first scan. Next, the laser beam LB travels a predetermined distance in the Y-axis direction as the second direction and reaches the second scanning start point in the second row, and travels from it in the first direction and reaches the second scanning end point in the second row. This is the second scan.

[0108] Next, the laser beam LB travels a predetermined distance in the Y-axis direction as the second direction and reaches the third scan start point in the third row, and travels from it in the first direction and reaches the third scan end point in the third row. This is the third scan. Next, the laser beam LB travels a predetermined distance in the Y-axis direction as the second direction and reaches the fourth scan start point in the fourth row, and travels from it in the first direction and reaches the fourth scan end point in the fourth row. This is the fourth scan. In other words, the laser scanning can be performed in such a way that the laser beam LB irradiates the wafer while traveling from the scan start point to the scan end point and then returns to the scan start point in the subsequent row.

[0109] Refer together to Figure 6 , Figure 9 and Figure 10 , according to an embodiment of the present disclosure, the micro-bonds 23 can be provided in each of the left and right portions of the active region 20A. In other words, in the first transfer process using a laser, the micro-bonds 23 can be arranged in the same direction as the scanning direction of the laser beam LB.

[0110] In order to transfer the light-emitting element ED from the active region 20A to the donor substrate 300, the cycle CSC2 of the laser beam LB scanning the wafer 200 in the active region 20A may include four scans.

[0111] In the micro-bond 23, the left first micro-bond 23a may be spaced apart from the light-emitting element ED provided at the first scan start point where the first scan starts, and the right first micro-bond 23a may be spaced apart from the light-emitting element ED provided at the first scan end point where the first scan ends. In addition, in the micro-bond 23, the left second micro-bond 23b may be spaced apart from the light-emitting element ED provided at the third scan start point where the third scan starts, and the right second micro-bond 23b may be spaced apart from the light-emitting element ED provided at the third scan end point where the third scan ends.

[0112] Therefore, the first micro-bond 23a and the second micro-bond 23b can be transferred to the donor substrate 300 while the light-emitting element ED is transferred to the donor substrate 300. Therefore, no separate laser scanning is required to transfer the first micro-bond 23a and the second micro-bond 23b onto the donor substrate 300.

[0113] Therefore, the production volume of the light-emitting elements affected by the number of times the laser beam scans the wafer can be increased. For example, as the number of times the laser beam scans the wafer decreases from 6 times to 4 times, the time taken to peel off a plurality of light-emitting elements from the wafer can be reduced. As the time required to peel off a plurality of light-emitting elements decreases, the production volume of the light-emitting elements can be increased within the same processing operation time.

[0114] Since the micro keys 23 are arranged in the same direction as the scanning direction of the laser beam LB, the micro keys 23 and the light-emitting elements ED can be scanned with the laser beam LB, and thus can be separated from the wafer, and thus can be simultaneously transferred to the donor substrate 300. In this regard, as Figure 9 and Figure 10 shown, when the laser beam LB scans the micro keys 23 in a manner that overlaps the micro keys 23, a laser mask including a shape in which a plurality of mask patterns MPT are arranged therein can overlap the micro keys 23. The plurality of mask patterns are arranged in the longitudinal direction and the width direction of the laser mask.

[0115] In this case, the laser beam LB can travel only until the Y-axis center of the mask pattern located at the end of the Y direction or the column direction of the laser mask including the plurality of mask patterns MPT completely overlaps with the Y-axis center of one of the island patterns arranged in the first column among the plurality of island patterns 23M of the micro keys. Therefore, the island patterns 23M provided in the second to fourth columns can be prevented from being damaged by the laser beam LB.

[0116] The size W2 of each of the plurality of island patterns 23M can be at least equal to or smaller than the size W1 of the light-emitting element ED. Therefore, both the light-emitting element and the micro keys can be transferred to the donor substrate using a single laser mask. Therefore, the accuracy of the position where the light-emitting element is transferred to the donor substrate can be improved, and thus the transfer accuracy can be improved. In addition, mask patterns designed based on various pitches can be applied to a single laser mask, thereby diversifying the mask model and thus increasing the life of the laser mask.

[0117] Figure 11 (a) in shows a timing chart of an operation of scanning a wafer with a laser beam in a general laser lift-off method. According to Figure 11 (a), during the period when the laser beam LB travels from the scanning start point to the scanning end point and is irradiated onto the wafer, the period when the laser beam is irradiated onto the wafer can be defined as the shot period, and each of the period before the laser beam starts irradiation and the period after the laser beam has reached the scanning end point and then the laser beam stops irradiation and travels to the next line can be defined as the shot blank period. That is, the general laser lift-off scheme can include a shot period and a shot blank period.

[0118] Alternatively, Figure 11 (b) in shows a timing chart of an operation of scanning a wafer with a laser beam in a laser lift-off scheme according to another embodiment of the present disclosure. Referring to Figure 11In (b) thereof, the firing period, which is the period during which the laser beam irradiates the wafer, is performed for the same time as in the general laser lift-off scheme. In one example, the laser lift-off scheme according to the present disclosure includes additional firing periods between adjacent firing blank periods. During the additional firing periods, the laser beam irradiates the wafer to transfer the micro-bonds 23 arranged in the same direction as the scanning direction of the laser beam.

[0119] Referring to Figures 12 to 14 , the donor substrate 300 on which a plurality of light-emitting elements ED have been placed through the first transfer process may include a plurality of donor substrates 300R, 300G, and 300B. For example, the plurality of donor substrates 300R, 300G, and 300B may include a first donor substrate 300R (refer to Figure 12 ), a second donor substrate 300G (refer to Figure 13 ), and a third donor substrate 300B (refer to Figure 14 ).

[0120] Referring to Figure 12 , the first donor substrate 300R may include a plurality of first light-emitting elements ED_1 that emit light of a first color. In one example, the first color may be red. Adjacent first light-emitting elements ED_1 may be arranged to be spaced apart from each other by a first width P1. The first width P1 may be 1 pixel pitch in size.

[0121] First micro-bond patterns 23_a1 and 23_a2 may be provided on the first donor substrate 300R. The first micro-bond patterns 23_a1 and 23_a2 may include a first part 23_a1 of the first micro-bond pattern provided in the left region of the first donor substrate 300R and a second part 23_a2 of the first micro-bond pattern provided in the right region of the first donor substrate 300R. The plurality of first parts 23_a1 of the first micro-bond pattern may be arranged in the left region in the Y-axis direction. The plurality of second parts 23_a2 of the first micro-bond pattern may be arranged in the right region in the Y-axis direction. In one example, the first part 23_a1 of the first micro-bond pattern and the second part 23_a2 of the first micro-bond pattern may be arranged to be spaced apart from each other in the row direction of the display panel PN.

[0122] The first micro-bond patterns 23_a1 and 23_a2 may be provided at a position spaced apart from the outermost first light-emitting element ED_1 among the plurality of first light-emitting elements ED_1 by a second width P2. The second width P2 may be greater than the first width P1, which is the pixel pitch size. For example, the second width P2 may be greater than the first width P1. For example, the second width P2 may be a rational number (greater than 1) multiple (e.g., 1.5 times, 2 times, 2.5 times, 3 times, etc.) of the first width P1.

[0123] Referring toFigure 13 The second donor substrate 300G may include a plurality of second light-emitting elements ED_2 that emit light of a second color. In one example, the second color may be green. The second light-emitting elements ED_2 may be arranged to be spaced apart from each other by a first width P1. The first width P1 may be a pixel pitch size.

[0124] A second micro-bonding pattern 23_b1 and 23_b2 may be provided on the second donor substrate 300G. The second micro-bonding pattern 23_b1 and 23_b2 may include a first portion 23_b1 of the second micro-bonding pattern provided in the left region of the second donor substrate 300G and a second portion 23_b2 of the second micro-bonding pattern provided in the right region of the second donor substrate 300G. The plurality of first portions 23_b1 of the second micro-bonding pattern may be arranged in the left region in the Y-axis direction. The plurality of second portions 23_b2 of the second micro-bonding pattern may be arranged in the right region in the Y-axis direction. In one example, the first portion 23_b1 of the second micro-bonding pattern and the second portion 23_b2 of the second micro-bonding pattern may be arranged to be spaced apart from each other in the row direction of the display panel PN.

[0125] The second micro-bonding pattern 23_b1 and 23_b2 may be provided at a position spaced apart from the outermost second light-emitting element ED_2 among the plurality of second light-emitting elements ED_2 by a second width P2. For example, the second width P2 may be greater than the first width P1. For example, the second width P2 may be a rational number (greater than 1) multiple (e.g., 1.5 times, 2 times, 2.5 times, 3 times, etc.) of the first width P1.

[0126] Referring to Figure 14 The third donor substrate 300B may include a plurality of third light-emitting elements ED_3 that emit light of a third color. In one example, the third color may be blue. The third light-emitting elements ED_3 may be arranged to be spaced apart from each other by a first width P1. The first width P1 may be 1 pixel pitch in size.

[0127] A third micro-bonding pattern 23_c1 and 23_c2 may be provided on the third donor substrate 300B. The third micro-bonding pattern 23_c1 and 23_c2 may include a first portion 23_c1 of the third micro-bonding pattern provided in the left region of the third donor substrate 300B and a second portion 23_c2 of the third micro-bonding pattern provided in the right region of the third donor substrate 300B. The plurality of first portions 23_c1 of the third micro-bonding pattern may be arranged in the left region in the Y-axis direction. The plurality of second portions 23_c2 of the third micro-bonding pattern may be arranged in the right region in the Y-axis direction. In one example, the first portion 23_c1 of the third micro-bonding pattern and the second portion 23_c2 of the third micro-bonding pattern may be arranged to be spaced apart from each other in the row direction of the display panel PN.

[0128] The third micro-key patterns 23_c1 and 23_c2 may be disposed at a position spaced apart from the outermost third light-emitting element ED_3 among the plurality of third light-emitting elements ED_3 by a second width P2. The second width P2 may be greater than the first width P1 which is the pixel pitch size. For example, the second width P2 may be greater than the first width P1. For example, the second width P2 may be a rational number (greater than 1) multiple (e.g., 1.5 times, 2 times, 2.5 times, 3 times, etc.) of the first width P1.

[0129] Refer to Figure 15 and Figure 16 , a second transfer process is performed to transfer a plurality of light-emitting elements ED (e.g., LEDs) from the donor substrate 300 to the display panel PN. In Figure 15 , for ease of description, the description is based on a single donor substrate 300. However, the same description may equally apply to the first donor substrate 300R, the second donor substrate 300G, and the third donor substrate 300B.

[0130] Refer to Figure 15 , a plurality of light-emitting elements ED of the donor substrate 300 are transferred to the display panel PN to manufacture a display device. For example, the donor substrate 300 is placed on the display panel PN such that the top surface of each light-emitting element among the plurality of light-emitting elements of the donor substrate 300 and the top surface of the display panel PN face each other. Next, the donor substrate 300 is shifted downward to contact the display panel PN to transfer the plurality of light-emitting elements ED of the donor substrate 300 to the display panel PN. Then, the plurality of light-emitting elements ED may be transferred to a first region of the display panel PN, while the micro-keys 23 may be transferred to a second region of the display panel PN. The first region may be a display region or a light-emitting region where no light-emitting element ED is provided. The second region may be a non-display region or a non-light-emitting region. In this regard, the plurality of light-emitting elements ED and the plurality of micro-keys 23 on the donor substrate 300 may be transferred to the display panel PN such that their positions do not change.

[0131] A display panel formed in the second transfer process according to another embodiment of the present disclosure may be formed in a three-group stamping manner. This will be described below with reference to Figure 16 for description.

[0132] In the three-group stamping scheme, one group of stamping may be completed by transferring the light-emitting elements and the micro-key patterns provided on each of the plurality of donor substrates to the display panel PN, and the plurality of donor substrates emit light beams of different colors respectively.

[0133] For example, refer to Figure 16, in the second transfer process, the first light-emitting elements ED_1, the first micro-bonding patterns 23_a1 and 23_a2 of the first donor substrate 300R, the second light-emitting elements ED_2, the second micro-bonding patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third light-emitting elements ED_3, the third micro-bonding patterns 23_c1 and 23_c2 of the third donor substrate 300B are transferred to the first group of regions of the display panel PN. Thus, the stamping of the first group ST1 can be completed. As Figure 16 shown, after the stamping of the first group ST1, the first light-emitting element ED_1, the second light-emitting element ED_2, and the third light-emitting element ED_3 are arranged side by side in the row direction.

[0134] The first light-emitting element ED_1, the second light-emitting element ED_2, and the third light-emitting element ED_3 transferred onto the display panel PN can emit light beams of different colors, respectively. For example, the light beams of different colors can be a red light beam, a green light beam, and a blue light beam. Each of the first light-emitting element to the third light-emitting element ED_1, ED_2, and ED_3 can form a sub-pixel.

[0135] The multiple light-emitting elements ED_1, ED_2, and ED_3 transferred onto the display panel PN in the stamping of the first group ST1 can be arranged in the regions of the first column to the fifth column starting from the left end of the display panel PN.

[0136] In this regard, the first micro-bonding patterns 23_a1 and 23_a2 of the first donor substrate 300R, the second micro-bonding patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third micro-bonding patterns 23_c1 and 23_c2 of the third donor substrate 300B can be arranged in one direction. In this regard, one of the first micro-bonding patterns 23_a1 and 23_a2, the second micro-bonding patterns 23_b1 and 23_b2, and the third micro-bonding patterns 23_c1 and 23_c2 can be spaced apart from the outermost one of the outermost light-emitting elements ED_1, ED_2, and ED_3 by a second width P2. For example, the second width P2 can be greater than the first width P1. For example, the second width P2 can be a rational number (greater than 1) times (such as 1.5 times, 2 times, 2.5 times, 3 times, etc.) the first width P1 equal to 1 pixel pitch.

[0137] Next, in the second transfer process, the first light-emitting elements ED_1 and the first micro-bonding patterns 23_a1 and 23_a2 of the first donor substrate 300R, the second light-emitting elements ED_2 and the second micro-bonding patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third light-emitting elements ED_3 and the third micro-bonding patterns 23_c1 and 23_c2 of the third donor substrate 300B are transferred to the second group of regions of the display panel PN. Accordingly, stamping of the second group ST2 can be completed in a manner overlapping the first group ST1. As Figure 16 shown, after stamping of the second group ST2, the first light-emitting element ED_1, the second light-emitting element ED_2, and the third light-emitting element ED_3 in the second group ST2 are arranged side by side in the row direction. In addition, the second group of regions has an overlapping region overlapping with the first group of regions, and the micro-bonding patterns in the overlapping region are located in the non-light-emitting regions between the adjacent light-emitting elements.

[0138] Then, the multiple light-emitting elements ED_1, ED_2, and ED_3 transferred in the second group ST2 can be arranged from the sixth column to the tenth column to the right of the third light-emitting element ED_3 transferred to the fifth column in the first group ST1.

[0139] Each of the first micro-bonding patterns 23_a1 and 23_a2 of the first donor substrate 300R, the second micro-bonding patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third micro-bonding patterns 23_c1 and 23_c2 of the third donor substrate 300B transferred from the second group ST2 can be arranged on a line extending in the left-to-right direction.

[0140] In this regard, the first micro-bonding patterns 23_a1 and 23_a2, the second micro-bonding patterns 23_b1 and 23_b2, and the third micro-bonding patterns 23_c1 and 23_c2 can be spaced apart from each of the leftmost or rightmost light-emitting elements ED_1, ED_2, and ED_3 by a second width P2. For example, the second width P2 (see Figure 12 , Figure 13 and Figure 14 ) can be greater than 1 pixel pitch.

[0141] Accordingly, the corresponding first portions 23_a1, 23_b1, and 23_c1 of the first micro-bonding pattern to the third micro-bonding pattern on the left side of the region transferred to the second group ST2 can be provided between the third light-emitting element ED_3 in the fourth column of the region transferred to the first group ST1 and the first light-emitting element ED_1 in the fifth column of the region transferred to the second group ST2. In this regard, the space between the third light-emitting element ED_3 transferred to the fourth column and the first light-emitting element ED_1 transferred to the fifth column can be an active chip region as a non-light-emitting region included in the display region.

[0142] In this regard, the first parts 23_a1, 23_b1, and 23_c1 of the first to third micro-key patterns should not interfere with the operations of the adjacent light-emitting elements ED_3 and ED_1, and thus should be arranged within the pixel pitch and should not exceed the pixel pitch.

[0143] In addition, when the stamping of the second group ST2 is completed, the second parts 23_a2, 23_b2, and 23_c2 of the first to third micro-key patterns on the right region of the area transferred to the first group ST1 can be set between the third light-emitting element ED_3 in the sixth column of the area transferred to the second group ST2 and the first light-emitting element ED_1 in the seventh column of the area transferred to the second group ST2. In this regard, the space between the third light-emitting element ED_3 in the sixth column of the area transferred to the second group ST2 and the first light-emitting element ED_1 in the seventh column of the area transferred to the second group ST2 can be the active chip area as the non-light-emitting area included in the display area.

[0144] In this regard, the second parts 23_a2, 23_b2, and 23_c2 of the first to third micro-key patterns should not interfere with the operations of the adjacent light-emitting elements ED_3 and ED_1, and thus should be arranged within the pixel pitch and should not exceed the pixel pitch.

[0145] Next, in the second transfer process, the first light-emitting element ED_1 and the first micro-key patterns 23_a1 and 23_a2 of the first donor substrate 300R, the second light-emitting element ED_2 and the second micro-key patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third light-emitting element ED_3 and the third micro-key patterns 23_c1 and 23_c2 of the third donor substrate 300B are transferred to the third group area of the display panel PN. Thus, the stamping of the third group ST3 can be completed. As Figure 16 shown, after the stamping of the third group ST3, the first light-emitting element ED_1, the second light-emitting element ED_2, and the third light-emitting element ED_3 in the third group ST3 are arranged side by side in the row direction. In addition, the third group area has an overlapping area with the second group area, and the micro-key patterns in the overlapping area are located in the non-light-emitting area between the adjacent light-emitting elements.

[0146] Then, the multiple light-emitting elements ED_1, ED_2, and ED_3 transferred to the display panel PN during the stamping of the third group ST3 can be arranged from the eleventh column to the fifteenth column to the right of the third light-emitting element ED_3 transferred to the tenth column of the second group ST2.

[0147] Each of the first micro-bonding patterns 23_a1 and 23_a2 of the first donor substrate 300R transferred from the third group ST3, the second micro-bonding patterns 23_b1 and 23_b2 of the second donor substrate 300G, and the third micro-bonding patterns 23_c1 and 23_c2 of the third donor substrate 300B can be arranged on a line extending in the left-to-right direction.

[0148] In this regard, the first micro-bonding patterns 23_a1 and 23_a2, the second micro-bonding patterns 23_b1 and 23_b2, and the third micro-bonding patterns 23_c1 and 23_c2 can be spaced apart from each of the leftmost or rightmost light-emitting elements ED_1, ED_2, and ED_3 by a second width P2. For example, the second width P2 (see Figure 12 , Figure 13 and Figure 14 ) can be greater than 1 pixel pitch.

[0149] Accordingly, the respective first portions 23_a1, 23_b1, and 23_c1 of the first to third micro-bonding patterns on the left side of the area transferred to the third group ST3 can be provided between the third light-emitting element ED_3 in the ninth column of the area transferred to the second group ST2 and the first light-emitting element ED_1 in the tenth column of the area transferred to the third group ST3. In this regard, the space between the third light-emitting element ED_3 in the ninth column of the area transferred to the second group ST2 and the first light-emitting element ED_1 in the tenth column of the area transferred to the third group ST3 can be an active chip area as a non-light-emitting area included in the display area.

[0150] In this regard, the respective first portions 23_a1, 23_b1, and 23_c1 of the first to third micro-bonding patterns should not interfere with the operation of the adjacent light-emitting elements ED_3 and ED_1, and should thus be arranged within the pixel pitch and should not exceed the pixel pitch.

[0151] In addition, when the stamping of the third group ST3 is completed, the second portions 23_a2, 23_b2, and 23_c2 of the first to third micro-bonding patterns on the right side area of the area transferred to the third group ST3 can be provided on the right side of the third light-emitting element ED_3 in the fifteenth column of the area transferred to the third group ST3.

[0152] Although in the above-described embodiment, all of the light-emitting elements and the micro-bonding patterns on the first donor substrate 300R, the second donor substrate 300G, and the third donor substrate 300B are transferred to the display panel, as an alternative, only the light-emitting elements and the micro-bonding patterns of one or two of the first donor substrate 300R, the second donor substrate 300G, and the third donor substrate 300B may be transferred to the display panel in each stamping. In addition, although three sets of stamping schemes are shown above, one set of stamping schemes, two sets of stamping schemes, or more sets of stamping schemes are also possible.

[0153] In other words, the micro-bonding patterns are provided at positions spaced apart from the outermost light-emitting elements at each of the two opposite ends in the row direction of the array region of the plurality of light-emitting elements by a pitch greater than one pixel pitch. Therefore, when the second transfer process has been performed to transfer the light-emitting elements onto the plurality of group regions of the display panel, the micro-bonding patterns may be provided in the active chip regions of the non-light-emitting regions between adjacent light-emitting elements that are respectively transferred to adjacent group regions among the plurality of group regions.

[0154] In one example, the arrangement order of the micro-bonding patterns in the left region may be configured such that the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided may be arranged in this order, and the arrangement order of the micro-bonding patterns in the right region may be configured such that the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided may be arranged in this order. However, the embodiments of the present disclosure are not limited thereto. In another example, the arrangement order of the micro-bonding patterns in the left region may be configured such that the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided may be arranged in this order, and the arrangement order of the micro-bonding patterns in the right region may be configured such that the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided may be arranged in this order.

[0155] In this regard, when the arrangement order of the micro-bonding patterns in each of the left region and the right region is configured such that the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided can be arranged in this order, the distance between the outermost light-emitting element and the micro-bonding pattern in the left region may be different from the distance between the outermost light-emitting element and the micro-bonding pattern in the right region. Alternatively, when the arrangement order of the micro-bonding patterns in the left region is configured such that the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided can be arranged in this order, while the arrangement order of the micro-bonding patterns in the right region can be configured such that the micro-bonding patterns on the donor substrate on which the blue light-emitting elements are provided, the micro-bonding patterns on the donor substrate on which the green light-emitting elements are provided, and the micro-bonding patterns on the donor substrate on which the red light-emitting elements are provided can be arranged in this order, the distance between the outermost light-emitting element and the micro-bonding pattern in the left region may be equal to the distance between the outermost light-emitting element and the micro-bonding pattern in the right region.

[0156] A display device including LEDs (light-emitting diodes) and a method for manufacturing a display device according to some aspects and embodiments of the present disclosure will be described below.

[0157] A first aspect of the present disclosure provides a display device, including: a display panel including light-emitting regions and non-light-emitting regions alternately arranged with each other in a row direction and / or a column direction; a plurality of light-emitting elements provided in the light-emitting regions of the display panel and arranged in multiple rows and multiple columns; and a plurality of micro-bonds provided in the non-light-emitting regions between the light-emitting regions adjacent to each other in the row direction and / or the column direction.

[0158] According to some embodiments of the display device of the present disclosure, each of the plurality of light-emitting elements is arranged with a first width spaced apart from each other by 1 pixel pitch, wherein each of the micro-bonds is spaced apart from the outermost light-emitting element provided in the display panel among the plurality of light-emitting elements by a second width, and the second width is greater than the first width.

[0159] According to some embodiments of the display device of the present disclosure, the second width is a rational multiple of 1 pixel pitch, wherein the rational number is greater than 1.

[0160] According to some embodiments of the display device of the present disclosure, the micro-bond includes: a first micro-bond provided on the display panel; and a second micro-bond provided on the display panel and spaced apart from the first micro-bond in the column direction of the display panel.

[0161] In some embodiments of the display device according to the present disclosure, the micro keys are arranged in the same direction as the direction in which the laser beam travels.

[0162] A second aspect of the present disclosure provides a method for manufacturing a display device, the method including: a first transfer step of transferring a plurality of light-emitting elements, a plurality of macro keys, and a plurality of micro keys provided on a wafer to a donor substrate; providing a display panel including a plurality of light-emitting regions and a plurality of non-light-emitting regions alternately arranged in a row direction and / or a column direction; and a second transfer step of transferring the plurality of light-emitting elements and the plurality of micro keys from the donor substrate to the display panel, wherein the plurality of micro keys are transferred to non-light-emitting regions between adjacent light-emitting elements.

[0163] In some embodiments of the method for manufacturing a display device according to the present disclosure, the micro keys include a first micro key and a second micro key, and the first micro key and the second micro key are arranged to be spaced apart from each other in the column direction of the display panel.

[0164] In some embodiments of the method for manufacturing a display device according to the present disclosure, the first transfer step includes: a first scan in which a laser beam is irradiated onto the wafer while traveling from a first scan start point at one end of the wafer to a first scan end point at the other end of the wafer opposite to the one end in a first row of the wafer; a second scan in which the laser beam travels in the column direction from the first row to a second scan start point at the other end of the wafer in a second row of the wafer, and is irradiated onto the wafer while traveling from the second scan start point to a second scan end point at the one end of the wafer opposite to the other end in the second row of the wafer; a third scan in which the laser beam travels in the column direction from the second row to a third scan start point at one end of the wafer in a third row of the wafer, and is irradiated onto the wafer while traveling from the third scan start point to a third scan end point at the other end of the wafer opposite to the one end in the third row of the wafer; and a fourth scan in which the laser beam travels in the column direction from the third row to a fourth scan start point at the other end of the wafer in a fourth row of the wafer, and is irradiated onto the wafer while traveling from the fourth scan start point to a fourth scan end point at the one end of the wafer opposite to the other end in the fourth row of the wafer.

[0165] In some embodiments of the method for manufacturing a display device according to the present disclosure, the first micro key includes two first micro keys respectively provided at the first scan start point and the first scan end point, and the second micro key includes two second micro keys respectively provided at the third scan start point and the third scan end point.

[0166] In some embodiments of the method for manufacturing a display device according to the present disclosure, each of the micro keys has an array structure in which a plurality of island patterns are arranged in a matrix.

[0167] In some embodiments of the method for manufacturing a display device according to the present disclosure, the size of one island pattern among the plurality of island patterns is equal to or smaller than the size of each light-emitting element in the light-emitting elements.

[0168] In some embodiments of the method for manufacturing a display device according to the present disclosure, a plurality of adjacent light-emitting elements are arranged to be spaced apart from each other by a first width equal to one pixel pitch, wherein each of the micro keys is spaced apart from the light-emitting element disposed closest to the micro key among the plurality of light-emitting elements by a second width, and the second width is greater than the first width.

[0169] In some embodiments of the method for manufacturing a display device according to the present disclosure, the second width is a rational multiple of one pixel pitch, wherein the rational number is greater than 1.

[0170] In some embodiments of the method for manufacturing a display device according to the present disclosure, each of the micro keys has an array structure in which a plurality of island patterns are arranged in a matrix, wherein a laser beam is irradiated onto the wafer through a laser mask, the laser mask includes a plurality of mask patterns and at least partially overlaps with the micro key, and the laser beam travels until the center in the column direction of a mask pattern located at the end in the column direction of the laser mask including the plurality of mask patterns vertically overlaps with the center in the column direction of one of the island patterns arranged in the first column among the plurality of island patterns of the micro key.

[0171] In some embodiments of the method for manufacturing a display device according to the present disclosure, a portion of the wafer exposed between adjacent island patterns among the plurality of island patterns is removed.

[0172] Although embodiments of the present disclosure have been described with reference to the accompanying drawings, the present disclosure is not limited to the above embodiments, but can be implemented in various different forms. Those skilled in the art can understand that the present disclosure can be practiced in other specific forms without changing the technical spirit or basic features of the present disclosure. Therefore, it should be understood that the above-described embodiments are not restrictive in all aspects, but illustrative.

Claims

1. A display device, comprising: A display panel, which includes light-emitting regions and non-light-emitting regions arranged in a row direction and / or a column direction; A plurality of light-emitting elements, which are provided in the light-emitting regions of the display panel and are arranged in multiple rows and multiple columns; And A plurality of micro keys, which are provided in the non-light-emitting regions between the light-emitting regions adjacent to each other in the row direction or the column direction.

2. The display device according to claim 1, wherein, Each of the light-emitting elements in the plurality of light-emitting elements emitting the same color of light is arranged to be spaced apart from each other by a first width of 1 pixel pitch, Wherein, the display device further includes additional micro keys located outside the outermost light-emitting elements provided on the display panel, and each of the additional micro keys is spaced apart from the outermost light-emitting elements provided on the display panel among the plurality of light-emitting elements by a second width, and the second width is greater than the first width.

3. The display device according to claim 2, wherein, The second width is a rational multiple of the 1 pixel pitch, wherein the rational number is greater than 1.

4. The display device according to claim 1, wherein, The micro keys include: A first micro key, which is provided on the display panel; and A second micro key, which is provided on the display panel and is spaced apart from the first micro key in the column direction of the display panel.

5. The display device according to claim 1, wherein, The micro keys are arranged in the same direction as the direction in which the laser beam travels when manufacturing the display device.

6. A method for manufacturing a display device, the method comprising: A first transfer step of transferring a plurality of light-emitting elements, a plurality of macro keys, and a plurality of micro keys provided on a wafer to a donor substrate; Providing a display panel, which includes a plurality of light-emitting regions and a plurality of non-light-emitting regions alternately arranged in a row direction and / or a column direction; And A second transfer step of transferring the plurality of light-emitting elements and the plurality of micro keys from the donor substrate to the display panel, Wherein, the plurality of micro keys are transferred to the non-light-emitting regions between the adjacent light-emitting elements.

7. The method according to claim 6, wherein The micro keys include a first micro key and a second micro key, and the first micro key and the second micro key are arranged to be spaced apart from each other in the column direction of the display panel.

8. The method according to claim 7, wherein The first transfer step includes: A first scan, in which a laser beam is irradiated to the wafer while traveling from a first scan start point at one end of the wafer to a first scan end point at the other end of the wafer opposite to the one end in the first row of the wafer; A second scan, in which the laser beam travels in the column direction from the first row to reach a second scan start point at the other end of the wafer in the second row of the wafer, and is irradiated to the wafer while traveling from the second scan start point to a second scan end point at the one end of the wafer in the second row of the wafer opposite to the other end; A third scan, in which the laser beam travels in the column direction from the second row to reach a third scan start point at one end of the wafer in the third row of the wafer, and is irradiated to the wafer while traveling from the third scan start point to a third scan end point at the other end of the wafer in the third row of the wafer opposite to the one end; and Fourth scan: In the fourth scan, the laser beam travels in the column direction from the third row to the fourth scan starting point at the other end of the wafer in the fourth row of the wafer, and irradiates the wafer while traveling from the fourth scan starting point to the fourth scan ending point at the end of the fourth row of the wafer opposite to the other end.

9. The method according to claim 8, wherein The first micro-bond includes two first micro-bonds respectively disposed at the first scan starting point and the first scan ending point. Among them, the second micro-bond includes two second micro-bonds respectively disposed at the third scan starting point and the third scan ending point.

10. The method according to claim 7, wherein, Each of the micro-bonds has an array structure in which a plurality of island patterns are arranged in a matrix manner.

11. The method according to claim 10, wherein, The size of one island pattern among the plurality of island patterns is equal to or smaller than the size of each light-emitting element among the light-emitting elements.

12. The method according to claim 6, wherein A plurality of light-emitting elements that are arranged adjacent to each other and emit light of the same color are arranged to be spaced apart from each other by a first width equal to 1 pixel pitch. Among them, the method further includes: transferring additional micro-bonds to the outside of the light-emitting elements disposed on the outermost side of the display panel, and each of the additional micro-bonds is spaced apart from the light-emitting element disposed closest to the additional micro-bond among the plurality of light-emitting elements by a second width, and the second width is greater than the first width.

13. The method according to claim 12, wherein The second width is a rational multiple of the 1 pixel pitch, where the rational number is greater than 1.

14. The method according to claim 8, wherein, Each of the micro-bonds has an array structure in which a plurality of island patterns are arranged in a matrix manner. Among them, the laser beam is irradiated onto the wafer through a laser mask, and the laser mask includes a plurality of mask patterns and at least partially overlaps with the micro-bond. Among them, the laser beam travels until the center in the column direction of a mask pattern at the end in the column direction of the laser mask including the plurality of mask patterns vertically overlaps with the center in the column direction of one of the island patterns arranged in the first column among the plurality of island patterns of the micro-bond.

15. The method according to claim 10, wherein, Remove a part of the wafer that is exposed between adjacent island patterns among the plurality of island patterns.

16. A method for manufacturing a display device, the method includes: Providing a first donor substrate including a plurality of light-emitting elements that emit light of a first color, a second donor substrate including a plurality of light-emitting elements that emit light of a second color, and a third donor substrate including a plurality of light-emitting elements that emit light of a third color. Among them, each of the first donor substrate, the second donor substrate, and the third donor substrate respectively includes micro-bonds disposed in side regions of the corresponding plurality of light-emitting elements; and Transferring the plurality of light-emitting elements and micro-bonds on the first donor substrate, the second donor substrate, and the third donor substrate to each group of regions in multiple groups of regions of the display panel, so that the light-emitting elements that emit light of different colors in each group of regions are arranged side by side in the row direction. Among them, the display panel includes a plurality of light-emitting regions and a plurality of non-light-emitting regions that are alternately arranged with each other in the row direction and / or the column direction, and Among them, adjacent regions in the multiple groups of regions overlap with each other, and the micro-bonds in the overlapping regions are located in the non-light-emitting regions between the light-emitting elements adjacent to each other.

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