Anode substrate for real RGB, light-emitting device and manufacturing method thereof
By adopting anode matrix design with cut-off structure and isolation structure in OLED display devices, combined with lithography technology, the problems of high production costs and poor product quality in the prior art are solved, and efficient RGB light emitting device production is achieved, reducing production costs and improving product quality.
Patent Information
- Application Number
- CN202410571398.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-10
- Publication Date
- 2025-07-08
AI Technical Summary
The existing colorization technology of OLED display has problems of high production costs and poor product quality, especially the use of color filter technology to affect luminescence efficiency and brightness. The production cost of FMM in the independent luminescence method of RGB pixels is high and the accuracy requirements are high, resulting in poor chip quality.
An anode substrate design with a cut-off structure and an isolation structure is adopted, combined with a photolithography process, the dependence on fine metal mask plates is avoided. By setting a cut-off structure and an isolation structure on the anode substrate, the photolithography process is used to remove excess materials, and the discontinuous deposition of the base color film layer is achieved.
It reduces production costs, improves product quality, avoids the high cost and accuracy requirements of using FMM, and realizes efficient RGB light emitting device production.
Smart Images
Figure CN120282684A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of manufacturing light-emitting devices, and particularly to an anode substrate for real RGB, a light-emitting device and a manufacturing method thereof. Background Art
[0002] The colorization of OLED displays is mainly achieved by using color filter technology. This technology combines white light OLEDs with color filters. First, a device for emitting white light OLEDs is prepared, and then the three primary colors are obtained through color filters, and the three primary colors are combined to achieve color display. However, the use of color filters will seriously affect the luminous efficiency and brightness. It is also possible to adopt the method of independent emission of RGB pixels. In this method, a fine metal mask plate, that is, FMM, is used during the evaporation process. However, the production cost of FMM is too high and it is not suitable for mass production. Secondly, the accuracy required by FMM is too high, which is prone to deviation, resulting in poor quality of the fabricated chips. Summary of the Invention
[0003] The purpose of the present invention is to provide an anode substrate for real RGB, a light-emitting device and a manufacturing method thereof, so as to solve the problems existing in the above-mentioned prior art, reduce the production cost and improve the product quality.
[0004] To achieve the above purpose, the present invention provides the following solutions:
[0005] The present invention provides an anode substrate for real RGB, including: a cutting structure, an isolation structure and a substrate having an anode structure. At least part of the isolation structure is disposed on the substrate between two adjacent anode structures. A basic color film layer is to be disposed on the anode structure. A cutting structure is disposed on the end face of the isolation structure far from the substrate, and the edge of the cutting structure extends beyond the isolation structure. The part of the isolation structure corresponding to the cathode is made of a conductive material, and the cutting structure is transparent.
[0006] Preferably, the cutting structure is a frustum structure, and the large end is connected to the top surface of the isolation structure.
[0007] Preferably, the isolation structure sequentially includes a PDL layer, an inorganic layer and a metal layer along the direction away from the substrate; the PDL layer covers the edge of the anode structure on its circumferential side.
[0008] The present invention also provides a light-emitting device, including: the anode substrate for real RGB as described above; and a basic color film layer, a cathode layer and a packaging film sequentially disposed on the anode structure.
[0009] The present invention also provides a manufacturing method of a light-emitting device, including:
[0010] Step 1: Fabricate the anode substrate for real RGB as described above;
[0011] Step 2: Sequentially deposit the base color film layer of the first color, the cathode layer, and the encapsulation film on the substrate;
[0012] Step 3: Use photolithography to remove the base color film layer, the cathode layer, and the encapsulation film at positions other than the position of the first color;
[0013] Step 4: Fabricate the base color film layer of the second color and the base color film layer of the third color; the fabrication methods of the base color film layer of the second color and the base color film layer of the third color are the same as that of the base color film layer of the first color;
[0014] Step 5: Fabricate the OC layer and the CG layer.
[0015] Preferably, Step 1 includes:
[0016] Deposit the PDL layer on the substrate;
[0017] Etch the PDL layer using photolithography; the remaining PDL layer covers the edges of the anode structure on its periphery;
[0018] Grow the isolation structure layer and the cutting structure layer, wherein the first layer of the isolation structure layer is an inorganic layer; the second layer is a metal layer; the third layer is a transparent material layer;
[0019] Etch the isolation structure layer and the cutting structure layer using photolithography to form the isolation structure and the cutting structure.
[0020] Preferably, Step 3 includes:
[0021] Use the yellow light process to form a photoresist protection layer on the encapsulation film at the position of the first color;
[0022] Etch the base color film layer, the cathode layer, and the encapsulation film of the first color outside the photoresist protection layer.
[0023] The present invention has achieved the following technical effects compared with the prior art:
[0024] For the anode substrate for real RGB provided by the present invention, when depositing the material layer, the cutting structure thereon can make the deposited base color film layer discontinuous, which facilitates the removal of redundant materials using photolithography. Therefore, the solution provided by the present invention can realize the fabrication of light-emitting devices without using an FMM. Therefore, the present invention can reduce production costs and improve product quality. Description of the Drawings
[0025] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required in the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.
[0026] Figure 1 Structural schematic diagram of the anode substrate for real RGB provided by an embodiment of the present invention;
[0027] Figure 2 Structural schematic diagram of the light-emitting device provided by an embodiment of the present invention
[0028] Figures 3 to 23 Product schematic diagrams corresponding to Steps 1 to 21 in the manufacturing method of the light-emitting device provided by an embodiment of the present invention.
[0029] In the figure: 1 - Anode substrate for real RGB; 11 - Substrate; 12 - Anode structure; 13 - Cutting structure; 14 - Metal layer; 15 - Inorganic layer; 16 - PDL layer; 17 - Isolation structure; 2 - Primary color film layer; 3 - Cathode; 4 - Encapsulation film; 5 - OC layer; 6 - CG layer. Detailed implementation manners
[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.
[0031] To make the above objects, features, and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners.
[0032] An embodiment of the present invention provides an anode substrate 1 for real RGB, as Figure 1 shown, including: a cutting structure 13, an isolation structure 17, and a substrate 11 having an anode structure 12. At least part of the isolation structure 17 is disposed on the substrate 11 between two adjacent anode structures 12. The anode structure 12 is for disposing a primary color film layer 2. A cutting structure 13 is disposed on the end surface of the isolation structure 17 away from the substrate 11. The edge of the cutting structure 13 extends beyond the isolation structure 17. The part of the isolation structure 17 corresponding to the cathode 3 is made of a conductive material, and the cutting structure 13 is transparent.
[0033] Among them, the isolation structure 17 is used to isolate adjacent base color film layers 2 and conduct the cathode 3.
[0034] The cutting structure 13 is made of a transparent material. During the exposure process, it ensures that light can pass through the cutting structure 13 to react with the photoresist. The cutting structure 13 can be an insulating material such as non-conductive SiO or SiN, or a metal oxide such as conductive ITO or FTO.
[0035] For the anode substrate 1 for real RGB provided by the present invention, when depositing the material layer, the cutting structure 13 thereon can make the deposited base color film layers 2 discontinuous, which facilitates the removal of excess materials using photolithography. Therefore, the solution provided by the present invention can fabricate the light-emitting device without using an FMM. Thus, the present invention can reduce production costs and improve product quality.
[0036] In order to improve the cutting effect, in some embodiments, the cutting structure 13 is a frustum structure, and the large end is connected to the top surface of the isolation structure 17. The cutting structure 13 is in the shape of a frustum, and it has an edge capable of cutting the evaporation material.
[0037] In some embodiments, the isolation structure 17 sequentially includes a PDL layer 16, an inorganic layer 15, and a metal layer 14 along the direction away from the substrate 11. The PDL layer 16 wraps the edge of the anode structure 12 on its periphery to better isolate adjacent base color film layers 2.
[0038] An embodiment of the present invention also provides a light-emitting device, as Figure 2 shown, including: the anode substrate 1 for real RGB as described in the above embodiment; and a base color film layer 2, a cathode 3 layer, and a packaging film 4 sequentially disposed on the anode structure 12.
[0039] Among them, the base color film layer 2 includes an R film layer, a G film layer, and a B film layer, that is, a red film layer, a green film layer, and a blue film layer.
[0040] In some embodiments, it further includes an OC layer 5 and a CG layer 6. The OC layer 5, namely over coater, functions to protect and planarize; the CG layer 6, namely cover glass, functions to protect.
[0041] An embodiment of the present invention also provides a method for fabricating a light-emitting device, including:
[0042] Step 1: Fabricate the anode substrate 1 for real RGB as described in the above embodiment;
[0043] Step 2: Sequentially deposit a base color film layer of the first color, a cathode layer, and a packaging film layer on the substrate;
[0044] Step 3: Use photolithography to remove the base color film layer, cathode layer, and encapsulation film layer at positions other than the first color position;
[0045] Step 4: Fabricate the base color film layer of the second color and the base color film layer of the third color; the fabrication methods of the base color film layer of the second color and the base color film layer of the third color are the same as that of the base color film layer of the first color;
[0046] Step 5: Fabricate the OC layer and the CG layer.
[0047] Specifically, Step 1 includes:
[0048] Deposit the PDL layer on the substrate;
[0049] Use photolithography to etch the PDL layer; the remaining PDL layer covers the edges of the anode structure on its periphery;
[0050] Grow the isolation structure layer and the cut-off structure layer, where the first layer of the isolation structure layer is an inorganic layer; the second layer is a metal layer; the third layer is a transparent material layer;
[0051] Use photolithography to etch the isolation structure layer and the cut-off structure layer to form the isolation structure and the cut-off structure.
[0052] Step 3 includes:
[0053] Use the yellow light process to form a photoresist protection layer on the encapsulation film layer at the first color position;
[0054] Etch the base color film layer, cathode layer, and encapsulation film layer of the first color outside the photoresist protection layer.
[0055] More specifically,
[0056] Step1: Growth of the PDL layer, as Figure 3 shown; generally use CVD (chemical vapor deposition) to grow SIO or SIN materials; or use the method of coating organic materials.
[0057] Step2: Patterning of the PDL layer - yellow light; use the yellow light patterning scheme, as Figure 4 shown.
[0058] Step3: Patterning of the PDL layer - etching, use the photoresist of the above pattern as a mask, and through the etching process, obtain the structure as Figure 5 shown. The PDL should cover the edges of the Anode (anode structure).
[0059] Step4: Growth of the isolation structure and the cut-off structure, as Figure 6As shown, the first layer is inorganic substances such as SiO and SiN; the second layer is metal, using metals with stable chemical properties in air such as W and Mo (selection of metal: stable in air, which is beneficial for production; and does not react chemically with the subsequent Cathode metal material); the third layer is a transparent substance, such as inorganic substances like SiO, SiN, and SiON, or transparent conductive oxides such as ITO. This layer has no requirement for conductivity but must be transparent.
[0060] Step5: Patterning of the isolation structure and the cut structure - yellow light, such as Figure 7 As shown, a yellow light patterning scheme is used.
[0061] Step6: Patterning of the isolation structure and the cut structure - etching, using the photoresist of the above pattern as a mask, and through the etching process, the structure as shown in Figure 8 is obtained.
[0062] The top transparent cut structure layer must exceed the middle metal layer. The exceeding length must ensure that the OLED organic material is cut during the subsequent evaporation process.
[0063] Step7: Evaporation of the first - color OLED organic material, such as Figure 9 As shown, the isolation structure and the cut structure make the organic material discontinuous.
[0064] Step8: Formation of the cathode of the first - color OLED, such as Figure 10 As shown, it can be the method of thermal evaporation or the sputter method. But in both cases, a good ohmic contact with the metal layer in the isolation structure must be ensured.
[0065] Step9: Overall encapsulation and protection of the first - color OLED device, such as Figure 11 As shown, the formation method of the encapsulation film includes CVD, ALD, etc. The film quality can be a single - layer film or a laminated film, including SiO, SiN, Al2O3, etc.
[0066] The key point is that it can bypass the cut structure and completely coat the cathode of the top layer of the OLED device.
[0067] Step10: Leave spaces for the second - and third - color OLEDs, such as Figure 12 As shown, using the yellow - light scheme, protect the first - color with photoresist, and leave the rest of the area blank.
[0068] Step11: Leave spaces for the second - and third - color OLEDs, such as Figure 13 As shown, using the etching scheme, remove the areas of the second - and third - color OLEDs down to the Anode.
[0069] The middle metal layer part of the isolation structure must be exposed.
[0070] Step12: Evaporate the second-color OLED organic material. As Figure 14 shown, the isolation structure makes the organic material discontinuous.
[0071] Step13: Form the cathode of the second-color OLED. As Figure 15 shown, it can be by thermal evaporation or sputter method. But in both cases, good ohmic contact with the metal in the middle of the isolation structure must be ensured.
[0072] The thickness can be adjusted according to the requirements of this color device and does not have to be the same as that of the first color.
[0073] Step14: Protect the whole second-color OLED device by encapsulation. As Figure 16 shown, the formation method of the encapsulation film includes CVD, ALD, etc. The film quality can be a single-layer film or a laminated film, including SiO, SIN, Al2O3, etc.
[0074] The key is to bypass the cut-off structure and completely cover the cathode on the top layer of the OLED device.
[0075] Step15: Leave empty the positions of the first and third-color OLEDs. As Figure 17 shown, use the yellow light scheme to protect the second color with photoresist and leave the rest of the area blank.
[0076] Step16: Leave empty the positions of the first and third-color OLEDs. As Figure 18 shown, use the etching scheme to remove the material at the position of the first color to the interface layer of the first color and remove the material at the position of the third-color OLED to the anode.
[0077] The middle metal part of the isolation structure must be exposed.
[0078] Step17: Evaporate the third-color OLED organic material. As Figure 19 shown, between the anodes, the isolation structure makes the organic material discontinuous.
[0079] Step18: Form the cathode of the third-color OLED. As Figure 20 shown, it can be by thermal evaporation or sputter method. But in both cases, good ohmic contact with the metal in the middle of the isolation structure must be ensured.
[0080] The thickness can be adjusted according to the requirements of this color device and does not have to be the same as that of the first and second colors.
[0081] Step19: Overall encapsulation protection of the third - color OLED device. As shown in Figure 21 , the forming method of the encapsulation film includes CVD, ALD, etc. The film quality can be a single - layer film or a laminated film, including SiO, SIN, Al2O3, etc.
[0082] The key point is to bypass the transparent layer exceeding the I - shape and completely cover the Cathode on the top layer of the OLED device.
[0083] Step20: Leave the positions of the first - and second - color OLEDs empty. As shown in Figure 22 , use the yellow - light scheme to protect the third - color with photoresist, and leave the rest of the area blank.
[0084] Step21: Leave the positions of the first - and second - color OLEDs empty. As shown in Figure 23 , use the etching scheme to remove the materials at the positions of the first - and second - color OLEDs to the interface layer of the first - and second - color OLEDs.
[0085] In the present invention, specific examples are used to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation of the present invention.
Claims
1. An anode substrate for real RGB, characterized in that: Comprising: A cutting structure, an isolation structure, and a substrate having an anode structure, at least a part of the isolation structure being disposed on the substrate between two adjacent anode structures, a color filter layer being disposed on the anode structure, a cutting structure being disposed on an end face of the isolation structure away from the substrate, an edge of the cutting structure extending beyond the isolation structure, a part of the isolation structure corresponding to a cathode being made of a conductive material, and the cutting structure being transparent.
2. The anodic substrate for real RGB according to claim 1, characterized in that: The cutting structure is a frustum structure, and a large end thereof is connected to a top surface of the isolation structure.
3. The anodic substrate for real RGB according to claim 1, characterized in that: The isolation structure sequentially includes a PDL layer, an inorganic layer, and a metal layer along a direction away from the substrate; the PDL layer covers an edge of the anode structure on its peripheral side.
4. A light-emitting device, characterized in that: Comprising: The anode substrate for real RGB according to any one of claims 1 to 3; And A color filter layer, a cathode layer, and a packaging film sequentially disposed on the anode structure.
5. A method for manufacturing a light-emitting device, characterized in that: Comprising: Step 1, manufacturing the anode substrate for real RGB according to any one of claims 1 to 2; Step 2, sequentially depositing a color filter layer of a first color, a cathode layer, and a packaging film on the substrate; Step 3, removing the color filter layer, the cathode layer, and the packaging film at other positions except the position of the first color by a photolithography process; Step 4, manufacturing a color filter layer of a second color and a color filter layer of a third color; wherein the manufacturing methods of the color filter layer of the second color and the color filter layer of the third color are the same as that of the color filter layer of the first color; Step 5, manufacturing an OC layer and a CG layer.
6. The method for manufacturing a light-emitting device according to claim 5, wherein: Step 1 includes: Depositing a PDL layer on the substrate; Etching the PDL layer by a photolithography process; the remaining PDL layer covers an edge of the anode structure on its peripheral side; Growing an isolation structure layer and a cutting structure layer, wherein a first layer of the isolation structure layer is an inorganic layer; a second layer is a metal layer; a third layer is a transparent material layer; Etching the isolation structure layer and the cutting structure layer by a photolithography process to form an isolation structure and a cutting structure.
7. The method for manufacturing a light-emitting device according to claim 5, wherein: Step 3 includes: Forming a photoresist protection layer on the packaging film at the position of the first color by a yellow light process; Etching the color filter layer, the cathode layer, and the packaging film of the first color outside the photoresist protection layer.