Quantum dot ink composition and display device including the same

Abstract

The invention provides a quantum dot ink composition and a display device. The quantum dot ink composition comprises quantum dots, a solvent and a phosphine compound.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2024 - 0000265, filed with the Korean Intellectual Property Office on January 2, 2024, the entire content of which is incorporated herein by reference. Technical field

[0003] The present disclosure relates to a quantum dot ink composition and a display device including the quantum dot ink composition. Background art

[0004] With the development of information technology, the importance of display devices as a connection medium between users and information (digital information) has become increasingly prominent. Accordingly, the use of display devices such as liquid crystal display devices and / or organic light - emitting display devices is increasing.

[0005] Quantum dots are nanocrystals of semiconductor materials that exhibit quantum confinement effects. When a quantum dot receives light from an excitation source and reaches an excited energy state, the quantum dot independently emits energy according to the corresponding bandgap. Since quantum dots can exhibit relatively excellent (e.g., high or appropriate) color purity, relatively high emission efficiency, and / or similar performance characteristics, quantum dots can be applied to various suitable components (display components) or devices. Summary of the invention

[0006] Aspects according to embodiments of the present disclosure relate to a quantum dot ink composition capable of improving the emission efficiency of quantum dots and a display device including the quantum dot ink composition.

[0007] Additional aspects will be set forth in part in the description below, and in part will be obvious from the description, or may be learned by practice of the presented embodiments of the present disclosure.

[0008] According to one or more embodiments of the present disclosure, the quantum dot ink composition may include quantum dots, a solvent, and a phosphine compound.

[0009] The phosphine compound may be 20% or less by weight based on the total weight of the quantum dot ink composition.

[0010] The phosphine compound may include one phosphine compound, or two or more phosphine compounds (e.g., two or more phosphine compounds having different numbers of phosphine atoms and / or different alkyl groups).

[0011] The phosphine compound may be a compound represented by PR3, where R is C n H 2n+1 and n is an integer selected from 2 to 8.

[0012] The phosphine compound may include a first compound represented by P(R1)3 and a second compound represented by P(R2)3, where R1 is C p H 2p+1 and p is an integer selected from 2 to 8, where R2 is C q H 2q+1 and q is an integer selected from 2 to 8 excluding p (e.g., p and q are different).

[0013] Each of the first compound and the second compound may be 10% or less by weight based on the total weight of the quantum dot ink composition.

[0014] The quantum dot ink composition may further include a monomer, a dispersant, a scattering agent, and an initiator.

[0015] The phosphine compound may react with oxygen to inhibit or reduce the photo-corrosion of the quantum dots.

[0016] The quantum dots may include a II-VI group semiconductor compound, a III-V group semiconductor compound, a III-VI group semiconductor compound, a I-III-VI group semiconductor compound, a IV-VI group semiconductor compound, a group IV element or compound, or any combination thereof.

[0017] According to one or more embodiments of the present disclosure, a display device may include a substrate, a pixel circuit layer on the substrate, a light-emitting element layer on the pixel circuit layer, and a color conversion layer including a quantum dot ink composition, and the quantum dot ink composition may include quantum dots, a solvent, and a phosphine compound.

[0018] The color conversion layer may be adjacent to the light-emitting element layer.

[0019] The phosphine compound may be 20% (wt%) or less by weight based on the total weight (100% or 100 wt%) of the quantum dot ink composition.

[0020] The phosphine compound may include one phosphine compound, or two or more phosphine compounds (e.g., two or more phosphine compounds having different numbers of phosphine atoms and / or different alkyl groups).

[0021] The phosphine compound may be a compound represented by PR3, where R is C n H 2n+1 and n is an integer selected from 2 to 8.

[0022] The phosphine compound may include a first compound represented by P(R1)3 and a second compound represented by P(R2)3, where R1 is C p H 2p+1 and p is an integer selected from 2 to 8, where R2 is C q H 2q+1And q is an integer selected from 2 to 8 excluding p (e.g., p and q are different).

[0023] Each of the first compound and the second compound may be 10% (wt%) or less by weight based on the total weight (100% or 100 wt%) of the quantum dot ink composition.

[0024] The quantum dot ink composition may further include a monomer, a dispersant, a scatterer, and an initiator.

[0025] The phosphine compound may react with oxygen to inhibit or reduce the photo-corrosion of the quantum dots. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other aspects and features of the present disclosure will become more apparent by referring to the drawings for a further detailed description of embodiments of the present disclosure.

[0027] Figure 1 is a plan view schematically showing a display device according to one or more embodiments.

[0028] Figure 2 is a circuit diagram schematically showing a sub-pixel according to one or more embodiments.

[0029] Figure 3 is a perspective view schematically showing a light-emitting element according to one or more embodiments.

[0030] Figure 4 is a cross-sectional view schematically showing a light-emitting element according to one or more embodiments.

[0031] Figure 5 is a plan view schematically showing a sub-pixel according to one or more embodiments.

[0032] Figure 6 is along Figure 5 sectional view taken along line A-A' of.

[0033] Figure 7 is a cross-sectional view schematically showing a sub-pixel according to one or more embodiments.

[0034] Figure 8 is a cross-sectional view schematically showing a sub-pixel according to one or more embodiments.

[0035] Figure 9 is a diagram schematically showing the degradation phenomenon of quantum dots.

[0036] Figure 10 and Figure 11 is a diagram schematically showing the function of an additive. DETAILED DESCRIPTION

[0037] Hereinafter, embodiments according to the present disclosure will be described in more detail with reference to the accompanying drawings. It should be noted that, in the following description, only parts necessary for understanding the operations according to the present disclosure are described, and descriptions of other parts may be omitted so as not to obscure the subject matter of the present disclosure. In addition, the present disclosure may be implemented in other suitable forms and is not limited to the embodiments described herein. However, the embodiments described herein are provided to describe the technical spirit of the present disclosure in sufficient detail to allow those skilled in the art to which the present disclosure pertains to easily implement the present disclosure.

[0038] Throughout the specification, when a part is described as being "connected" to another part, it includes not only the case where the part is "directly connected", but also the case where the part is "indirectly connected" through other intervening elements. As used herein, the terms are used to describe specific embodiments and are not intended to limit the scope of the present disclosure. Throughout the specification, it will also be understood that, as used herein, the terms "include" and / or "comprise" may indicate the presence of the stated features or elements, but do not preclude the presence or addition of one or more other features or elements. "At least any one of X, Y, and Z" and "at least any one selected from the group consisting of X, Y, and Z (for example, the group composed of X, Y, and Z)" may be interpreted as one X, one Y, one Z, or any suitable combination of two or more of X, Y, and Z (for example, XYZ, XY, YZ, or XZ). Here, "and / or" includes all combinations of one or more of the corresponding configurations.

[0039] Here, terms such as first and second may be used to describe one or more suitable components, but these components are not limited by these terms. These terms are used to distinguish one component from another. Therefore, without departing from the scope disclosed herein, the first component within a certain range may refer to the second component.

[0040] Spatial relative terms such as "lower", "upper", and / or similar terms may be used for descriptive purposes to describe the relationship between one element or feature and another element or feature (some other elements or features) as shown in the drawings. In addition to the directions depicted in the drawings, the spatial relative terms are also intended to include other directions in use, operation, and / or manufacturing. For example, when the device shown in the drawings is turned upside down, an element depicted as being "lower" than other elements or features is positioned "above" the other elements or features in one direction. Therefore, in one or more embodiments, the term "lower" may include both the upper and lower directions. In addition, the device may face other directions (for example, rotated 90 degrees or in other directions), and thus the spatial relative terms used herein are interpreted accordingly.

[0041] Various embodiments are described with reference to the accompanying drawings that schematically illustrate exemplary embodiments. Accordingly, it will be appreciated that the shape may vary, for example, according to tolerances and / or manufacturing techniques. Thus, one or more embodiments disclosed herein should not be construed as limited to the specific shapes shown and should be construed to include, for example, appropriate variations in shape due to manufacturing. As described above, the shapes shown in the drawings may not be the actual shapes of the regions of the device, and the present embodiment is not limited thereto.

[0042] Hereinafter, embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings.

[0043] Figure 1 is a plan view schematically showing a display device according to one or more embodiments.

[0044] Referring to Figure 1 , the display device DD may include a substrate SUB and pixels PXL disposed on the substrate SUB. Each of the pixels PXL may include a first sub-pixel SPXL1, a second sub-pixel SPXL2, and / or a third sub-pixel SPXL3. Hereinafter, when at least one of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 is arbitrarily referred to or when two or more types (kinds) of sub-pixels are collectively (e.g., collectively) referred to, at least one sub-pixel or two or more types (kinds) of sub-pixels are referred to as "sub-pixels SPXL" or "a plurality of sub-pixels SPXL".

[0045] The substrate SUB may configure (e.g., provide) a base member of the display device DD and may be a rigid or flexible substrate or film. For example, the substrate SUB may be formed of a rigid substrate formed by glass or tempered glass, or a flexible substrate (or film) of a plastic or metal material, and the material and / or physical properties of the substrate SUB are not particularly limited.

[0046] The substrate SUB may include a display area DA for displaying an image and a non-display area NDA excluding the display area DA. The pixels PXL may be disposed in the display area DA. Various lines, pads, and / or built-in circuits connected to the pixels PXL in the display area DA may be disposed in the non-display area NDA. The pixels PXL may be regularly arranged according to a stripe or pentile arrangement structure. is a trademark of Samsung Display Co., Ltd. However, the arrangement structure of the pixels PXL is not limited thereto, and the pixels PXL may be arranged in the display area DA in one or more suitable structures and / or methods.

[0047] A pixel PXL may include two or more types (kinds) of sub-pixels SPXL that respectively emit light of different colors. For example, in a display area DA, a first sub-pixel SPXL1 that emits light of a first color, a second sub-pixel SPXL2 that emits light of a second color, and a third sub-pixel SPXL3 that emits light of a third color may be arranged. The first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3, which are arranged adjacent to each other and are at least one, may form a pixel PXL that can emit light of one or more appropriate colors. For example, the first sub-pixel SPXL1 may be a red pixel for emitting red light, the second sub-pixel SPXL2 may be a green pixel for emitting green light, and the third sub-pixel SPXL3 may be a blue pixel for emitting blue light, but the present disclosure is not limited thereto.

[0048] In one or more embodiments, the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 may have light-emitting elements that emit light of the same color, may include color conversion layers and / or color filters of different colors arranged on each light-emitting element, and thus may respectively emit light of a first color, light of a second color, and light of a third color. In one or more embodiments, the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 may include a first-color light-emitting element, a second-color light-emitting element, and a third-color light-emitting element, and thus may respectively emit light of a first color, light of a second color, and light of a third color. However, the colors, types or kinds, numbers, and / or similar characteristics of the sub-pixels SPXL that configure (e.g., form) each of the pixels PXL are not particularly limited.

[0049] The sub-pixel SPXL may include at least one light source driven by set or predetermined control signals (e.g., scan signals and data signals) and / or set or predetermined power (e.g., first drive power and second drive power). The light source may include Figure 3 and Figure 4 at least one light-emitting element LD as shown in, for example, an ultra-small columnar light-emitting element LD having a size ranging from nanoscale to micron scale. However, the present disclosure is not necessarily limited thereto, and one or more appropriate types (kinds) of light-emitting elements LD may be utilized as the light source of the sub-pixel SPXL.

[0050] In one or more embodiments, each sub-pixel SPXL may be configured (e.g., formed) as an active pixel. However, the types or kinds, structures, and / or driving methods of the sub-pixels SPXL applicable to the display device DD are not particularly limited. For example, each sub-pixel SPXL may be configured (e.g., formed) as a pixel of a passive or active light-emitting display device having one or more appropriate structures and / or driving methods.

[0051] For convenience of description, in Figure 1 the structure of the display device DD is schematically shown based on the display area DA. However, according to one or more embodiments, at least one driving circuit unit (e.g., at least one of a scan driver and a data driver), a line, and / or a pad not shown may be included in the display device DD.

[0052] Figure 2 is a circuit diagram schematically showing a sub-pixel according to one or more embodiments.

[0053] Figure 2 shows Figure 1 the electrical connection relationship of components included in each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 shown in, and the components included in each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 are not necessarily limited thereto. In addition, in Figure 2 not only the components included in each of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 but also the area where the components are provided may be referred to as the sub-pixel SPXL.

[0054] Referring to Figure 2 , the sub-pixel SPXL may include a light-emitting unit EMU that generates light having a luminance corresponding to a data signal. In addition, the sub-pixel SPXL may further include a pixel circuit PXC for driving the light-emitting unit EMU.

[0055] For example, the light-emitting unit EMU may include a first connection electrode ELT1 connected to a first driving power (first power source) VDD through the pixel circuit PXC and a first power line PL1, a fifth connection electrode ELT5 connected to a second driving power (second power source) VSS through a second power line PL2, and a plurality of light-emitting elements LD connected between the first connection electrode ELT1 and the fifth connection electrode ELT5. The first driving power VDD and the second driving power VSS may have different potentials so that the light-emitting element LD can emit light. For example, the first driving power VDD may be set to a relatively high-potential power, and the second driving power VSS may be set to a relatively low-potential power.

[0056] In one or more embodiments, the light-emitting unit EMU may include at least one series stage. Each series stage may include a pair of electrodes (e.g., two electrodes) and at least one light-emitting element LD connected between the pair of electrodes in the forward direction. Here, the number of series stages configured (e.g., formed) for the light-emitting unit EMU and the number of light-emitting elements LD configured (e.g., formed) for each series stage are not particularly limited. For example, the number of light-emitting elements LD configured (e.g., formed) for each series stage may be the same as or different from each other, and the number of light-emitting elements LD is not particularly limited.

[0057] For example, the light-emitting unit EMU may include a first series stage including at least one first light-emitting element LD1, a second series stage including at least one second light-emitting element LD2, a third series stage including at least one third light-emitting element LD3, and a fourth series stage including at least one fourth light-emitting element LD4.

[0058] The first series stage may include a first connection electrode ELT1 and a second connection electrode ELT2 and at least one first light-emitting element LD1 connected between the first connection electrode ELT1 and the second connection electrode ELT2. Each first light-emitting element LD1 may be connected between the first connection electrode ELT1 and the second connection electrode ELT2 in the forward direction. For example, a first end EP1 of the first light-emitting element LD1 may be connected to the first connection electrode ELT1, and a second end EP2 of the first light-emitting element LD1 may be connected to the second connection electrode ELT2.

[0059] The second series stage may include a second connection electrode ELT2 and a third connection electrode ELT3 and at least one second light-emitting element LD2 connected between the second connection electrode ELT2 and the third connection electrode ELT3. Each second light-emitting element LD2 may be connected between the second connection electrode ELT2 and the third connection electrode ELT3 in the forward direction. For example, a first end EP1 of the second light-emitting element LD2 may be connected to the second connection electrode ELT2, and a second end EP2 of the second light-emitting element LD2 may be connected to the third connection electrode ELT3.

[0060] The third series stage may include a third connection electrode ELT3 and a fourth connection electrode ELT4 and at least one third light-emitting element LD3 connected between the third connection electrode ELT3 and the fourth connection electrode ELT4. Each third light-emitting element LD3 may be connected between the third connection electrode ELT3 and the fourth connection electrode ELT4 in the forward direction. For example, a first end EP1 of the third light-emitting element LD3 may be connected to the third connection electrode ELT3, and a second end EP2 of the third light-emitting element LD3 may be connected to the fourth connection electrode ELT4.

[0061] The fourth series stage may include a fourth connection electrode ELT4 and a fifth connection electrode ELT5, and at least one fourth light-emitting element LD4 connected between the fourth connection electrode ELT4 and the fifth connection electrode ELT5. Each fourth light-emitting element LD4 may be connected between the fourth connection electrode ELT4 and the fifth connection electrode ELT5 in the forward direction. For example, a first end EP1 of the fourth light-emitting element LD4 may be connected to the fourth connection electrode ELT4, and a second end EP2 of the fourth light-emitting element LD4 may be connected to the fifth connection electrode ELT5.

[0062] A first electrode (e.g., the first connection electrode ELT1) of the light-emitting unit EMU may be an anode electrode of the light-emitting unit EMU. A last electrode (e.g., the fifth connection electrode ELT5) of the light-emitting unit EMU may be a cathode electrode of the light-emitting unit EMU.

[0063] In the case where the light-emitting elements LD are connected in a series / parallel structure, compared with the case where the same number of light-emitting elements LD are only connected in parallel, the power efficiency can be improved. Additionally, in a sub-pixel SPXL in which the light-emitting elements LD are connected in a series / parallel structure, even if a short-circuit defect occurs in a partial series stage, since a certain brightness can be exhibited (achieved) by the light-emitting elements LD of the remaining stages, the possibility of having a dark spot defect in the sub-pixel SPXL can be reduced. However, the present disclosure is not necessarily limited thereto, and the light-emitting unit EMU may be configured (e.g., formed) by only connecting the light-emitting elements LD in series, or the light-emitting unit EMU may be configured (e.g., formed) by only connecting the light-emitting elements LD in parallel.

[0064] Each of the light-emitting elements LD may include a first end (e.g., a p-type or p-class end) connected to a first driving power VDD via at least one electrode (e.g., the first connection electrode ELT1), a pixel circuit PXC, and / or a first power line PL1, and a second end (e.g., an n-type or n-class end) connected to a second driving power VSS via at least one other electrode (e.g., the fifth connection electrode ELT5), a second power line PL2, and / or the like. For example, the light-emitting element LD may be connected between the first driving power VDD and the second driving power VSS in the forward direction. The light-emitting element LD connected in the forward direction may configure (e.g., form) an effective light source of the light-emitting unit EMU.

[0065] When a driving current is supplied through the corresponding pixel circuit PXC, the light-emitting element LD may emit light having a brightness corresponding to the driving current. For example, during each frame period, the pixel circuit PXC may supply a driving current corresponding to a grayscale value to be exhibited in the corresponding frame to the light-emitting unit EMU. Accordingly, during the period when the light-emitting element LD emits light having a brightness corresponding to the driving current, the light-emitting unit EMU may exhibit a brightness corresponding to the driving current.

[0066] The light-emitting element LD of the light-emitting unit EMU can emit light having a luminance corresponding to the driving current supplied through the corresponding pixel circuit PXC. For example, during each frame period, the pixel circuit PXC can supply a driving current corresponding to the gray value of the corresponding frame data to the light-emitting unit EMU. The driving current supplied to the light-emitting unit EMU can be divided and flow through each of the light-emitting elements LD. Accordingly, each of the light-emitting elements LD can emit light having a luminance corresponding to the current flowing through the light-emitting element LD, and thus the light-emitting unit EMU can emit light having a luminance corresponding to the driving current.

[0067] The pixel circuit PXC can be connected to the i-th scan line Si and the j-th data line Dj of the corresponding sub-pixel SPXL. For example, when the sub-pixel SPXL is arranged in the i-th row and the j-th column of the display area DA (e.g., refer to Figure 1 ), the pixel circuit PXC of the sub-pixel SPXL can be connected to the i-th scan line Si and the j-th data line Dj. In addition, the pixel circuit PXC can be connected to the i-th control line CLi and the j-th sensing line SENj of the display area DA.

[0068] The pixel circuit PXC can include a first transistor T1, a second transistor T2, a third transistor T3, and a storage capacitor Cst.

[0069] The first transistor T1 can be a driving transistor for controlling the driving current applied to the light-emitting unit EMU, and can be connected between the first driving power VDD and the light-emitting unit EMU. For example, the first end of the first transistor T1 can be connected (or coupled) to the first driving power VDD through the first power line PL1, the second end of the first transistor T1 can be connected to the second node N2, and the gate electrode of the first transistor T1 can be connected to the first node N1. The first transistor T1 can control the amount of the driving current applied to the light-emitting unit EMU from the first driving power VDD through the second node N2 according to the voltage applied to the first node N1. In one or more embodiments, the first end of the first transistor T1 can be a drain electrode, and the second end of the first transistor T1 can be a source electrode, but the present disclosure is not necessarily limited thereto. According to one or more embodiments, the first end can be a source electrode, and the second end can be a drain electrode.

[0070] The second transistor T2 can be a switching transistor that selects the sub-pixel SPXL and activates the sub-pixel SPXL in response to a scan signal, and can be connected between the j-th data line Dj and the first node N1. The first end of the second transistor T2 can be connected to the j-th data line Dj, the second end of the second transistor T2 can be connected to the first node N1, and the gate electrode of the second transistor T2 can be connected to the i-th scan line Si. The first end and the second end of the second transistor T2 can be different ends. For example, when the first end is a drain electrode, the second end can be a source electrode.

[0071] When a scan signal supplying a gate-on voltage (e.g., a relatively high-level voltage) is supplied from the i-th scan line Si, the second transistor T2 can be turned on to electrically connect the j-th data line Dj and the first node N1. The first node N1 can be the point where the second end of the second transistor T2 is connected to the gate electrode of the first transistor T1, and the second transistor T2 can transfer the data voltage to the gate electrode of the first transistor T1.

[0072] The third transistor T3 can connect the first transistor T1 to the j-th sense line SENj to obtain a sense signal through the j-th sense line SENj, and detect the characteristics of the sub-pixel SPXL including the threshold voltage and / or similar characteristics of the first transistor T1. Information about the characteristics of the sub-pixel SPXL can be used to convert the image data so that the characteristic deviation between the sub-pixels SPXL can be compensated.

[0073] The first end of the third transistor T3 can be connected to the initialization power. The third transistor T3 can be an initialization transistor capable of initializing the second node N2, and when turned on due to the supply of a sense control signal from the i-th control line CLi, can transfer the voltage of the initialization power to the second node N2. Accordingly, the second storage electrode (or upper electrode) of the storage capacitor Cst connected to the second node N2 can be initialized. The second end of the third transistor T3 can be connected to the second end of the first transistor T1, the first end of the third transistor T3 can be connected to the j-th sense line SENj, and the gate electrode of the third transistor T3 can be connected to the i-th control line CLi.

[0074] The first storage electrode of the storage capacitor Cst can be connected to the first node N1, and the second storage electrode of the storage capacitor Cst can be connected to the second node N2. During one frame period, the storage capacitor Cst is charged with a data voltage corresponding to the data signal supplied to the first node N1. Accordingly, the storage capacitor Cst can store a voltage corresponding to the voltage difference between the voltage of the gate electrode of the first transistor T1 and the voltage of the second node N2.

[0075] In Figure 2 embodiments are disclosed in which all of the first transistor T1, the second transistor T2, and the third transistor T3 are n-type or n-class transistors, but the present disclosure does not have to be limited thereto. For example, at least one of the above-mentioned first transistor T1, second transistor T2, and third transistor T3 can be changed to a p-type or p-class transistor. Additionally, in Figure 2 embodiments are disclosed in which the light-emitting unit EMU is connected between the pixel circuit PXC and the second driving power VSS, but the present disclosure does not have to be limited thereto, and the light-emitting unit EMU can be connected between the first driving power VDD and the pixel circuit PXC.

[0076] The structure of the pixel circuit PXC can be variously and appropriately changed. For example, the pixel circuit PXC may further include at least one transistor element (such as a transistor element for initializing the first node N1 and / or a transistor element for controlling the emission time of the light-emitting element LD) and / or other circuit elements (such as a boosting capacitor for boosting the voltage of the first node N1).

[0077] Figure 3 is a perspective view schematically showing a light-emitting element according to one or more embodiments. Figure 4 is a cross-sectional view schematically showing a light-emitting element according to one or more embodiments. Figure 3 and Figure 4 shows a columnar light-emitting element LD, but the type or kind and / or shape of the light-emitting element LD do not have to be limited thereto.

[0078] Referring to Figure 3 and Figure 4 , the light-emitting element LD may include a first semiconductor layer 11, an active layer 12, a second semiconductor layer 13, and / or an electrode layer 14.

[0079] The light-emitting element LD may be formed in a columnar shape extending in one direction. The light-emitting element LD may have a first end EP1 and a second end EP2. One of the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed at the first end EP1 of the light-emitting element LD. The other of the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed at the second end EP2 of the light-emitting element LD. For example, the first semiconductor layer 11 may be disposed at the first end EP1 of the light-emitting element LD, and the second semiconductor layer 13 may be disposed at the second end EP2 of the light-emitting element LD.

[0080] According to one or more embodiments, the light-emitting element LD may be a light-emitting element manufactured in a columnar shape by an etching method and / or a similar method. In the present specification, columnar includes a rod-like shape or a strip-like shape (such as a cylinder or a polygonal column) having an aspect ratio greater than 1, and the shape of its cross-section is not limited.

[0081] The light-emitting element LD may have dimensions as small as the nanometer scale and / or the micrometer scale. For example, each light-emitting element LD may have a (cross-sectional) diameter D (or major axis or width) and / or a length L in the range from nanometers to micrometers. However, the dimensions of the light-emitting element LD do not have to be limited thereto, and the dimensions of the light-emitting element LD may be variously and appropriately changed according to the design conditions of one or more suitable devices (such as a display device and / or the like) using the light-emitting element LD as a light source.

[0082] The first semiconductor layer 11 may be a semiconductor layer of a first conductivity type or species. For example, the first semiconductor layer 11 may include a p-type or p-type-like semiconductor layer. For example, the first semiconductor layer 11 may include at least one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, and AlN, and may include a p-type or p-type-like semiconductor layer doped with a dopant of the first conductivity type or species (such as Mg). However, the materials configured (e.g., formed) for the first semiconductor layer 11 do not have to be limited thereto, and one or more other suitable materials may be configured (e.g., utilized to form) the first semiconductor layer 11.

[0083] The active layer 12 may be disposed between the first semiconductor layer 11 and the second semiconductor layer 13. The active layer 12 may include any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, and a quantum wire structure, but the present disclosure does not have to be limited thereto. The active layer 12 may include GaN, InGaN, InAlGaN, AlGaN, or AlN, and one or more other suitable materials may be configured (e.g., utilized to form) the active layer 12.

[0084] When a voltage equal to or greater than a threshold voltage is applied across (e.g., opposite ends of) the light-emitting element LD, electron-hole pairs recombine in the active layer 12, and thus the light-emitting element LD emits light. By controlling the emission of the light-emitting element LD using such a principle, the light-emitting element LD can be utilized as a light source for one or more suitable light-emitting devices including pixels of a display device.

[0085] The second semiconductor layer 13 may be disposed on the active layer 12 and may include a semiconductor layer of a type or species different from that of the first semiconductor layer 11. The second semiconductor layer 13 may include an n-type or n-type-like semiconductor layer. For example, the second semiconductor layer 13 may include any one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, and AlN, and may include an n-type or n-type-like semiconductor layer doped with a dopant of the second conductivity type or species (such as Si, Ge, and / or Sn). However, the materials configured (e.g., formed) for the second semiconductor layer 13 do not have to be limited thereto, and one or more other suitable materials may be configured (e.g., utilized to form) the second semiconductor layer 13.

[0086] The electrode layer 14 may be disposed on the first end EP1 and / or the second end EP2 of the light-emitting element LD. Figure 4 The case where the electrode layer 14 is formed on the first semiconductor layer 11 is shown, but the present disclosure does not have to be limited thereto. For example, a separate contact electrode may also be disposed on the second semiconductor layer 13.

[0087] The electrode layer 14 may include a transparent metal or a transparent metal oxide. For example, the electrode layer 14 may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and tin zinc oxide (ZTO), but the present disclosure is not necessarily limited thereto. As described above, when the electrode layer 14 is formed of a transparent metal or a transparent metal oxide, the light generated in the active layer 12 of the light-emitting element LD may pass through the electrode layer 14 and may be emitted to the outside of the light-emitting element LD.

[0088] The insulating layer INF may be provided on the surface of the light-emitting element LD. The insulating layer INF may be directly disposed on the surfaces of the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13, and / or the electrode layer 14. The insulating layer INF may expose the first end EP1 and the second end EP2 of the light-emitting element LD having different polarities. According to one or more embodiments, the insulating layer INF may expose the side portions of the electrode layer 14 and / or the second semiconductor layer 13 adjacent to the first end EP1 and / or the second end EP2 of the light-emitting element LD.

[0089] The insulating layer INF may prevent or reduce an electrical short circuit (e.g., a short circuit) that may occur when the active layer 12 comes into contact with a conductive material other than the first semiconductor layer 11 and the second semiconductor layer 13. The insulating layer INF may minimize or reduce surface defects of the light-emitting element LD, thereby improving the lifespan and emission efficiency of the light-emitting element LD.

[0090] The insulating layer INF may include at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), hafnium oxide (HfO x ), and titanium oxide (TiO x ). For example, the insulating layer INF may be configured (e.g., formed) as a bilayer, and each layer configuring (e.g., forming) the bilayer may include a different material. For example, the insulating layer INF may be configured (e.g., formed) as a bilayer configured (e.g., formed) of aluminum oxide (AlO x ) and silicon oxide (SiO x ), but the present disclosure is not necessarily limited thereto. According to one or more embodiments, the insulating layer INF may not be provided.

[0091] The light-emitting device including the light-emitting element LD described above can be used in one or more appropriate types (kinds) of devices (including display devices) that require a light source. For example, the light-emitting element LD can be arranged in each pixel of the display panel, and the light-emitting element LD can be used as the light source for each pixel. However, the application field of the light-emitting element LD is not limited to the above examples. For example, the light-emitting element LD can also be used in other types (kinds) of devices (such as lighting devices) that require a light source.

[0092] Figure 5 is a plan view schematically showing a sub-pixel according to one or more embodiments.

[0093] Referring to Figure 5 , each sub-pixel SPXL can include a light-emitting element LD (referring to Figure 2 ), a connection electrode ELT, and / or a sub-electrode SLT. For example, Figure 5 can be one of the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 that configure (e.g., form) Figure 1 the pixel PXL, and the first sub-pixel SPXL1, the second sub-pixel SPXL2, and the third sub-pixel SPXL3 can have substantially the same or similar structures to each other. Additionally, Figure 5 shows an embodiment in which each sub-pixel SPXL includes light-emitting elements LD arranged in four series stages as shown in Figure 2 , but the number of series stages of each sub-pixel SPXL can be variously and appropriately changed according to one or more embodiments.

[0094] Hereinafter, when any one or more light-emitting elements selected from the first light-emitting element LD1, the second light-emitting element LD2, the third light-emitting element LD3, and the fourth light-emitting element LD4 are mentioned, or when two or more types (kinds) of light-emitting elements are mentioned comprehensively (e.g., collectively), the one or more light-emitting elements or the two or more types (kinds) of light-emitting elements are referred to as "light-emitting element LD" or "plurality of light-emitting elements LD". Additionally, when at least one electrode selected from the electrodes including the first connection electrode ELT1, the second connection electrode ELT2, the third connection electrode ELT3, the fourth connection electrode ELT4, and the fifth connection electrode ELT5 is mentioned, the at least one electrode is referred to as "connection electrode ELT" or "plurality of connection electrodes ELT". Additionally, when at least one electrode selected from the electrodes including the first sub-electrode SLT1, the second sub-electrode SLT2, the third sub-electrode SLT3, and the fourth sub-electrode SLT4 is mentioned, the at least one electrode is referred to as "sub-electrode SLT" or "plurality of sub-electrodes SLT".

[0095] The light-emitting element LD can be electrically connected between a pair of connection electrodes ELT in each emission region EMA.

[0096] The first light-emitting element LD1 can be electrically connected between the first connection electrode ELT1 and the second connection electrode ELT2. For example, the first end EP1 of the first light-emitting element LD1 can be electrically connected to the first connection electrode ELT1, and the second end EP2 of the first light-emitting element LD1 can be electrically connected to the second connection electrode ELT2.

[0097] The second light-emitting element LD2 can be electrically connected between the second connection electrode ELT2 and the third connection electrode ELT3. For example, the first end EP1 of the second light-emitting element LD2 can be electrically connected to the second connection electrode ELT2, and the second end EP2 of the second light-emitting element LD2 can be electrically connected to the third connection electrode ELT3.

[0098] The third light-emitting element LD3 can be electrically connected between the third connection electrode ELT3 and the fourth connection electrode ELT4. For example, the first end EP1 of the third light-emitting element LD3 can be electrically connected to the third connection electrode ELT3, and the second end EP2 of the third light-emitting element LD3 can be electrically connected to the fourth connection electrode ELT4.

[0099] The fourth light-emitting element LD4 can be electrically connected between the fourth connection electrode ELT4 and the fifth connection electrode ELT5. For example, the first end EP1 of the fourth light-emitting element LD4 can be electrically connected to the fourth connection electrode ELT4, and the second end EP2 of the fourth light-emitting element LD4 can be electrically connected to the fifth connection electrode ELT5.

[0100] For example, the first light-emitting element LD1 can be positioned in the upper left region of the emission area EMA, and the second light-emitting element LD2 can be positioned in the lower left region of the emission area EMA. The third light-emitting element LD3 can be positioned in the lower right region of the emission area EMA, and the fourth light-emitting element LD4 can be positioned in the upper right region of the emission area EMA. However, the arrangement, connection structure, and / or similar features of the first light-emitting element LD1, the second light-emitting element LD2, the third light-emitting element LD3, and the fourth light-emitting element LD5 can be variously and appropriately changed according to the structure of the light-emitting unit EMU (for example, refer to Figure 2 ).

[0101] Each of the connection electrodes ELT can be provided in the emission area EMA and can be arranged to overlap at least one light-emitting element LD. For example, each connection electrode ELT can be formed on the light-emitting element LD to overlap the light-emitting element LD and can be electrically connected to the light-emitting element LD.

[0102] The first connection electrode ELT1 can be arranged on the first end EP1 of the first light-emitting element LD1 and can be electrically connected to the first end EP1 of the first light-emitting element LD1.

[0103] The second connection electrode ELT2 may be disposed on the second end EP2 of the first light-emitting element LD1 and may be electrically connected to the second end EP2 of the first light-emitting element LD1. Additionally, the second connection electrode ELT2 may be disposed on the first end EP1 of the second light-emitting element LD2 and may be electrically connected to the first end EP1 of the second light-emitting element LD2. For example, the second connection electrode ELT2 may electrically connect the second end EP2 of the first light-emitting element LD1 and the first end EP1 of the second light-emitting element LD2 in the emission region EMA. For this purpose (e.g., in this embodiment), the second connection electrode ELT2 may have a bent shape. For example, the second connection electrode ELT2 may have a curved or bent structure at the boundary between the region where at least one first light-emitting element LD1 is disposed and the region where at least one second light-emitting element LD2 is disposed.

[0104] The third connection electrode ELT3 may be disposed on the second end EP2 of the second light-emitting element LD2 and may be electrically connected to the second end EP2 of the second light-emitting element LD2. Additionally, the third connection electrode ELT3 may be disposed on the first end EP1 of the third light-emitting element LD3 and may be electrically connected to the first end EP1 of the third light-emitting element LD3. For example, the third connection electrode ELT3 may electrically connect the second end EP2 of the second light-emitting element LD2 and the first end EP1 of the third light-emitting element LD3 in the emission region EMA. For this purpose (e.g., in this embodiment), the third connection electrode ELT3 may have a bent shape. For example, the third connection electrode ELT3 may have a curved or bent structure at the boundary between the region where at least one second light-emitting element LD2 is disposed and the region where at least one third light-emitting element LD3 is disposed.

[0105] The fourth connection electrode ELT4 may be disposed on the second end EP2 of the third light-emitting element LD3 and may be electrically connected to the second end EP2 of the third light-emitting element LD3. Additionally, the fourth connection electrode ELT4 may be disposed on the first end EP1 of the fourth light-emitting element LD4 and may be electrically connected to the first end EP1 of the fourth light-emitting element LD4. For example, the fourth connection electrode ELT4 may electrically connect the second end EP2 of the third light-emitting element LD3 and the first end EP1 of the fourth light-emitting element LD4 in the emission region EMA. For this purpose (e.g., in this embodiment), the fourth connection electrode ELT4 may have a bent shape. For example, the fourth connection electrode ELT4 may have a curved or bent structure at the boundary between the region where at least one third light-emitting element LD3 is disposed and the region where at least one fourth light-emitting element LD4 is disposed.

[0106] The fifth connection electrode ELT5 may be disposed on the second end EP2 of the fourth light-emitting element LD4 and may be electrically connected to the second end EP2 of the fourth light-emitting element LD4.

[0107] In the method described above, the light-emitting element LD can be connected in a desired or appropriate form by using the connection electrode ELT. For example, the first light-emitting element LD1, the second light-emitting element LD2, the third light-emitting element LD3, and the fourth light-emitting element LD4 can be sequentially connected in series by using the connection electrode ELT.

[0108] The sub-electrode SLT can be electrically connected to the connection electrode ELT respectively. For example, the first sub-electrode SLT1 can be electrically connected to the second connection electrode ELT2, the second sub-electrode SLT2 can be electrically connected to the third connection electrode ELT3, the third sub-electrode SLT3 can be electrically connected to the fourth connection electrode ELT4, and the fourth sub-electrode SLT4 can be electrically connected to the fifth connection electrode ELT5.

[0109] In some embodiments, the first sub-electrode SLT1 can be provided integrally with the second connection electrode ELT2, the second sub-electrode SLT2 can be provided integrally with the third connection electrode ELT3, the third sub-electrode SLT3 can be provided integrally with the fourth connection electrode ELT4, and the fourth sub-electrode SLT4 can be provided integrally with the fifth connection electrode ELT5, but the present disclosure is not necessarily limited thereto.

[0110] In some embodiments, the sub-electrode SLT can be spaced apart from and / or separated from (e.g., spaced or separated) the connection electrode ELT, and the sub-electrode SLT and the connection electrode ELT can be electrically connected through the connection portions CN1 and CN2 respectively. For example, one end of the sub-electrode SLT can be electrically connected to the connection electrode ELT through the first connection portion CN1. The other end of the sub-electrode SLT can be electrically connected to the connection electrode ELT through the second connection portion CN2. For example, the first connection portion CN1 and / or the second connection portion CN2 can be provided integrally with the sub-electrode SLT and / or the connection electrode ELT, and can be disposed on the same layer as (or in) the sub-electrode SLT and / or the connection electrode ELT, but the present disclosure is not necessarily limited thereto.

[0111] The sub-electrode SLT can extend along the second direction DR2, and can be spaced apart from and / or separated from (e.g., spaced or separated) the connection electrode ELT in the first direction DR1. The first connection portion CN1 and / or the second connection portion CN2 can extend in the first direction DR1 between the sub-electrode SLT and the connection electrode ELT. As described above, when the sub-electrode SLT electrically connected to the connection electrode ELT is formed, the dark spot defect of the sub-pixel SPXL can be reduced or improved.

[0112] Figure 6 is a cross-sectional view taken along Figure 5 the line A-A' of.

[0113] Referring to Figure 6, according to one or more embodiments, a sub-pixel SPXL may include a light-emitting element layer DPL disposed on a substrate SUB and a pixel circuit layer PCL. The light-emitting element layer DPL may include a dam pattern BNP, a first electrode ALE1, a second electrode ALE2, and a third electrode ALE3, a light-emitting element LD, a connection electrode ELT (refer to Figure 5 ) and / or a sub-electrode SLT (refer to Figure 5 ).

[0114] The dam pattern BNP may be disposed on the substrate SUB. According to one or more embodiments, the dam pattern BNP may have one or more suitable shapes. In one or more embodiments, the dam pattern BNP may have a shape protruding in a third direction DR3 on the substrate SUB. In some embodiments, the dam pattern BNP may be formed to have an inclined surface inclined at a set or predetermined angle with respect to the substrate SUB. However, the present disclosure is not necessarily limited thereto, and the dam pattern BNP may have a curved surface, a stepped shape, and / or sidewalls of a similar situation. For example, the dam pattern BNP may have a semi-circular or semi-elliptical shape and / or a cross-section of a similar shape.

[0115] The electrodes and insulating layers disposed on the dam pattern BNP may have a shape corresponding to the dam pattern BNP. For example, the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 disposed on the dam pattern BNP may include an inclined surface or a curved surface having a shape corresponding to the shape of the dam pattern BNP. Accordingly, the dam pattern BNP may be used together with the electrodes provided thereon as a reflection member for improving the light output efficiency by guiding the light emitted from the light-emitting element LD in the front surface direction (i.e., the third direction DR3) of the pixel PXL (e.g., refer to Figure 1 ).

[0116] The dam pattern BNP may include at least one organic material and / or at least one inorganic material. For example, the dam pattern BNP may include organic materials such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, polyester resin, polyphenylene sulfide resin, and / or benzocyclobutene (BCB). However, the present disclosure is not necessarily limited thereto, and the dam pattern BNP may include one or more suitable types (species) of inorganic materials including silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), hafnium oxide (HfO x ), and / or titanium oxide (TiO x ).

[0117] The first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may be disposed on the dam pattern BNP. The first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may be disposed to be separated from and / or apart from each other (e.g., spaced apart or separated) in the sub-pixel SPXL. The first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may be disposed on the same layer (or in the same layer). For example, the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may be formed simultaneously (e.g., synchronously) in substantially the same process, but the present disclosure is not necessarily limited thereto.

[0118] The first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may receive an alignment signal in an alignment step (e.g., action or task) of the light-emitting element LD. Accordingly, an electric field may be formed between the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3, and the light-emitting element LD provided to each in the sub-pixel SPXL may be aligned between the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3. For example, the first light-emitting element LD1 may be aligned between the first electrode ALE1 and the second electrode ALE2, and the fourth light-emitting element LD4 may be aligned between the second electrode ALE2 and the third electrode ALE3. In some embodiments, Figure 5 the second light-emitting element LD2 shown therein may be aligned between the first electrode ALE1 and the second electrode ALE2, and the third light-emitting element LD3 may be aligned between the second electrode ALE2 and the third electrode ALE3.

[0119] Each of the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may include at least one conductive material. For example, each of the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3 may include at least one conductive material selected from metal materials (e.g., metals) such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), titanium (Ti), molybdenum (Mo), and / or copper (Cu), alloys including the same, conductive oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), zinc tin oxide (ZTO), and / or gallium tin oxide (GTO), and conductive polymers such as PEDOT, but the present disclosure is not necessarily limited thereto.

[0120] The first insulating layer INS1 may be disposed on the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3. The first insulating layer INS1 may be configured (e.g., formed) as a single layer or a multi-layer, and may include a silicon oxide (SiO x) Silicon nitride (SiN x ) Silicon oxynitride (SiO x N y ) Aluminum nitride (AlN x ) Aluminum oxide (AlO x ) Zirconium oxide (ZrO x ) Hafnium oxide (HfO x ) And / or one or more suitable types (species) of inorganic materials of titanium oxide (TiO x ).

[0121] Dam BNK can be disposed on the first insulating layer INS1 (e.g., the dam BNK can be disposed on the first insulating layer INS1 in the non-emitting region NEA). The dam BNK can form a bank structure that separates the emission regions EMA to which the light-emitting element LD is to be supplied in each step (e.g., action or task) of supplying the light-emitting element LD to the sub-pixels SPXL. For example, a desired or suitable type or species and / or amount of light-emitting element ink can be supplied to the regions separated by the dam BNK.

[0122] Dam BNK can include an organic material, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, polyester resin, polyphenylene sulfide resin, and / or benzocyclobutene (BCB). However, the present disclosure is not necessarily limited thereto, and the dam BNK can include an inorganic material containing silicon oxide (SiO x ) Silicon nitride (SiN x ) Silicon oxynitride (SiO x N y ) Aluminum nitride (AlN x ) Aluminum oxide (AlO x ) Zirconium oxide (ZrO x ) Hafnium oxide (HfO x ) And / or one or more suitable types (species) of inorganic materials of titanium oxide (TiO x ).

[0123] According to one or more embodiments, the dam BNK can include at least one light-blocking and / or reflective material. Accordingly, light leakage between adjacent sub-pixels SPXL can be prevented or reduced. For example, the dam BNK can include at least one black matrix material, color filter material, and / or the like. For example, the dam BNK can be formed as a black and opaque pattern that can block or reduce the transmission of light. In one or more embodiments, a reflective layer and / or the like can be formed on the surface (e.g., sidewall) of the dam BNK to increase the light efficiency of each sub-pixel SPXL.

[0124] The light-emitting element LD can be disposed on the first insulating layer INS1. The light-emitting element LD can be disposed between a first electrode ALE1, a second electrode ALE2, and a third electrode ALE3 on the first insulating layer INS1. The light-emitting element LD can be prepared in the form of being dispersed in a light-emitting element ink and supplied to each of the sub-pixels SPXL by an inkjet printing method and / or a similar method. For example, the light-emitting element LD can be dispersed in a volatile solvent and supplied to each of the sub-pixels SPXL. Subsequently, when an alignment signal is supplied to the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3, an electric field can be formed between the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3, and thus the light-emitting element LD can be aligned between the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3. After the light-emitting element LD is aligned, by evaporating the solvent or in another suitable manner to remove the solvent, the light-emitting element LD can be stably disposed between the first electrode ALE1, the second electrode ALE2, and the third electrode ALE3.

[0125] The second insulating layer INS2 can be disposed on the light-emitting element LD. For example, the second insulating layer INS2 can be partially provided on the light-emitting element LD and expose the first end EP1 (e.g., refer to Figure 5 ) and the second end EP2 (e.g., refer to Figure 5 ) of the light-emitting element LD. When the second insulating layer INS2 is formed on the light-emitting element LD after the alignment of the light-emitting element LD is completed, separation of the light-emitting element LD from the alignment position can be prevented or reduced.

[0126] The second insulating layer INS2 can be configured (e.g., formed) as a single layer or a multi-layer and can include one or more suitable types of inorganic materials including silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), hafnium oxide (HfO x ), and / or titanium oxide (TiO x ).

[0127] The connection electrode ELT (refer to Figure 5 ) can be disposed on the first end EP1 and the second end EP2 of the light-emitting element LD exposed by the second insulating layer INS2.

[0128] The first connection electrode ELT1 can be directly disposed on the first end EP1 of the first light-emitting element LD1 to contact the first end EP1 of the first light-emitting element LD1.

[0129] The second connection electrode ELT2 can be directly disposed on the second end EP2 of the first light-emitting element LD1 to contact the second end EP2 of the first light-emitting element LD1. Additionally, the second connection electrode ELT2 can be directly disposed on the first end EP1 of the second light-emitting element LD2 to contact the first end EP1 of the second light-emitting element LD2. For example, the second connection electrode ELT2 can electrically connect the second end EP2 of the first light-emitting element LD1 and the first end EP1 of the second light-emitting element LD2.

[0130] The fourth connection electrode ELT4 can be directly disposed on the second end EP2 of the third light-emitting element LD3 to contact the second end EP2 of the third light-emitting element LD3. Additionally, the fourth connection electrode ELT4 can be directly disposed on the first end EP1 of the fourth light-emitting element LD4 to contact the first end EP1 of the fourth light-emitting element LD4. For example, the fourth connection electrode ELT4 can electrically connect the second end EP2 of the third light-emitting element LD3 and the first end EP1 of the fourth light-emitting element LD4.

[0131] The fifth connection electrode ELT5 can be directly disposed on the second end EP2 of the fourth light-emitting element LD4 to contact the second end EP2 of the fourth light-emitting element LD4.

[0132] In some embodiments, Figure 5 The third connection electrode ELT3 shown in can be directly disposed on the second end EP2 of the second light-emitting element LD2 to contact the second end EP2 of the second light-emitting element LD2. Additionally, the third connection electrode ELT3 can be directly disposed on the first end EP1 of the third light-emitting element LD3 to contact the first end EP1 of the third light-emitting element LD3. For example, the third connection electrode ELT3 can electrically connect the second end EP2 of the second light-emitting element LD2 and the first end EP1 of the third light-emitting element LD3.

[0133] The connection electrode ELT can be configured (e.g., formed) by multiple conductive layers. For example, the first connection electrode ELT1, the third connection electrode ELT3, and / or the fifth connection electrode ELT5 can be formed by the same conductive layer. For example, the first connection electrode ELT1, the third connection electrode ELT3, and / or the fifth connection electrode ELT5 can be formed simultaneously (e.g., synchronously) in substantially the same process. Additionally, the second connection electrode ELT2 and / or the fourth connection electrode ELT4 can be formed by the same conductive layer. For example, the second connection electrode ELT2 and / or the fourth connection electrode ELT4 can be formed simultaneously (e.g., synchronously) in substantially the same process. For example, the third insulating layer INS3 can be disposed on the second connection electrode ELT2 and / or the fourth connection electrode ELT4, and the first connection electrode ELT1, the third connection electrode ELT3, and / or the fifth connection electrode ELT5 can be disposed on the third insulating layer INS3. The third insulating layer INS3 can be configured (e.g., formed) as a single layer or multiple layers and can include one or more suitable types (species) of inorganic materials including silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum nitride (AlN x ), aluminum oxide (AlO x ), zirconium oxide (ZrO x ), hafnium oxide (HfO x ), and / or titanium oxide (TiO x ).

[0134] When the third insulating layer INS3 is disposed between the connection electrodes ELT formed by multiple conductive layers, since the connection electrodes ELT can be stably separated by the third insulating layer INS3, the electrical stability between the first end EP1 and the second end EP2 of the light-emitting element LD can be ensured.

[0135] Each of the connection electrodes ELT can be formed by one or more suitable transparent conductive materials. For example, the connection electrode ELT can include at least one selected from the group consisting of transparent conductive materials including indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), zinc tin oxide (ZTO), and / or gallium tin oxide (GTO), and can be implemented to be substantially transparent or translucent to meet a set or predetermined light transmittance. Accordingly, the light emitted from the first end EP1 and the second end EP2 of the light-emitting element LD can pass through the connection electrode ELT and can be emitted to the outside.

[0136] The sub-electrode SLT (refer to Figure 5) may be each disposed on (or in) the same layer as the connection electrode ELT. For example, the sub-electrodes SLT and the connection electrode ELT that are electrically connected to each other, and the connection portions CN1 and CN2 (refer to Figure 5 ) that connect the sub-electrode SLT and the connection electrode ELT may be provided integrally and may be disposed on the same layer (or in).

[0137] For example, the first sub-electrode SLT1 may be disposed on (or in) the same layer as the second connection electrode ELT2. For example, the first sub-electrode SLT1 may be formed simultaneously (e.g., synchronously) with the second connection electrode ELT2 in substantially the same process, but the present disclosure is not necessarily limited thereto. Additionally, the second sub-electrode SLT2 may be disposed on (or in) the same layer as the third connection electrode ELT3. For example, the second sub-electrode SLT2 may be formed simultaneously (e.g., synchronously) with the third connection electrode ELT3 in substantially the same process, but the present disclosure is not necessarily limited thereto. Additionally, the third sub-electrode SLT3 may be disposed on (or in) the same layer as the fourth connection electrode ELT4. For example, the third sub-electrode SLT3 may be formed simultaneously (e.g., synchronously) with the fourth connection electrode ELT4 in substantially the same process, but the present disclosure is not necessarily limited thereto. Additionally, the fourth sub-electrode SLT4 may be disposed on (or in) the same layer as the fifth connection electrode ELT5. For example, the fourth sub-electrode SLT4 may be formed simultaneously (e.g., synchronously) with the fifth connection electrode ELT5 in substantially the same process, but the present disclosure is not necessarily limited thereto.

[0138] Figure 7 is a cross-sectional view schematically showing a sub-pixel according to one or more embodiments. Figure 7 Shows the color conversion layer CCL, the black matrix pattern BM, the color filter layer CFL, the overcoat layer OC, and / or the like provided on the light-emitting element layer DPL of the sub-pixel SPXL shown in Figure 6 .

[0139] Refer to Figure 7 , the color conversion layer CCL may be disposed on the light-emitting element layer DPL. For example, the color conversion layer CCL may be adjacent to the light-emitting element layer DPL. When the color conversion layer CCL is adjacent to the light-emitting element layer DPL, the distance between the color conversion layer CCL and the light-emitting element LD (refer to Figure 6 ) may be reduced, and thus the efficiency of the display device DD (refer to Figure 1 ) may be improved.

[0140] The color conversion layer CCL may include a quantum dot ink composition. In one or more embodiments, the quantum dot ink composition may include a solvent SVT, quantum dots (e.g., a plurality of quantum dots) QD, and an additive ADT.

[0141] The solvent SVT can disperse quantum dots QD uniformly (e.g., substantially uniformly). For example, the solvent SVT can be an organic solvent. For example, the solvent SVT can include 1-octadecene (ODE), trioctylamine (TOA), trioctylphosphine (TOP), or any combination thereof.

[0142] The quantum dots QD can include II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0143] For example, the II-VI group semiconductor compounds can include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and / or MgS, ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, and / or MgZnS, quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and / or HgZnSTe, or any combination thereof.

[0144] For example, the III-V group semiconductor compounds can include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb, ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb, quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb, or any combination thereof. According to one or more embodiments, the III-V group semiconductor compounds can further include group II elements. For example, the III-V group semiconductor compounds can include InZnP, InGaZnP, InAlZnP, or any combination thereof.

[0145] For example, the III-VI group semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, and / or InTe, ternary compounds such as InGaS3 and / or InGaSe3, or any combination thereof.

[0146] For example, the I-III-VI group semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, and / or AgAlO2, or any combination thereof.

[0147] For example, the IV-VI group semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, and / or PbTe, ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and / or SnPbTe, quaternary compounds such as SnPbSSe, SnPbSeTe, and / or SnPbSTe, or any combination thereof.

[0148] For example, the Group-IV elements or compounds may include single-element substances such as Si and / or Ge, binary compounds such as SiC and / or SiGe, or any combination thereof.

[0149] Each element included in a multi-element compound (such as a binary compound, a ternary compound, and / or a quaternary compound) may be present in the particles at a substantially uniform concentration or a non-uniform concentration.

[0150] The quantum dots QD may be configured (e.g., formed) by at least one type or species of quantum dots corresponding to the color of the light emitted from the sub-pixel SPXL. For example, when the sub-pixel SPXL is a red pixel for emitting red light, the quantum dots QD may be red quantum dots that convert the blue light emitted from the light-emitting element LD into red light. Additionally, when the sub-pixel SPXL is a green pixel for emitting green light, the quantum dots QD may be green quantum dots that convert the blue light emitted from the light-emitting element LD into green light.

[0151] For example, when the sub-pixel SPXL is a blue pixel for emitting blue light, the quantum dots QD may be blue quantum dots that convert the green light or red light emitted from the light-emitting element LD into blue light.

[0152] According to one or more embodiments, the color conversion layer CCL may not include (e.g., may exclude) quantum dots QD. For example, when the sub-pixel SPXL is a blue pixel for emitting blue light and the light-emitting element LD emits blue light, the color conversion layer CCL may include at least one type or kind of light-scattering particles.

[0153] The additive ADT is used to prevent or reduce the deterioration of the quantum dots QD by removing oxygen. This will be described in more detail with reference to Figure 10 the additive ADT.

[0154] According to one or more embodiments, the quantum dot ink composition may further include an initiator. For example, the initiator may include a thermal polymerization initiator and / or a photo-polymerization initiator, but the type or kind of the initiator is not particularly limited.

[0155] According to one or more embodiments, the quantum dot ink composition may further include a dispersant and a viscosity control agent for improving the emission property and the coating property, and the type or kind of the dispersant and the viscosity control agent is not particularly limited. Additionally, the quantum dot ink composition may further include a scattering agent for improving the optical property, and the type or kind of the scattering agent is not particularly limited.

[0156] According to one or more embodiments, the quantum dot ink composition may further include a monomer. For example, the monomer may be a diacrylate compound. In some embodiments, the diacrylate compound may include an alkyl glycol diacrylate compound. In some embodiments, the alkyl glycol diacrylate compound may include a hexanediol diacrylate compound.

[0157] The optical insulation layer QIN may be disposed on the surface of the color conversion layer CCL. The optical insulation layer QIN may be disposed around the color conversion layer CCL (e.g., disposed to surround the color conversion layer CCL), and may at least partially overlap with the light-emitting element layer DPL.

[0158] The optical insulation layer QIN may be an inorganic insulation layer. For example, the optical insulation layer QIN may include one or more suitable types (kinds) of inorganic materials including silicon nitride (SiN x ), silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and / or aluminum oxide (AlO x ).

[0159] The black matrix pattern BM may be disposed on both sides (e.g., opposite sides) of the color conversion layer CCL. For example, the black matrix pattern BM may be positioned to directly contact the side surface of the optical insulation layer QIN.

[0160] The black matrix pattern BM may include at least one black matrix material among one or more suitable types (kinds) of black matrix materials (e.g., at least one suitable light-blocking material), a color filter material of a specific color, and / or the like.

[0161] The conductive pattern CP may be disposed on the black matrix pattern BM. For example, the conductive pattern CP may be positioned to at least partially overlap with the black matrix pattern BM.

[0162] The conductive pattern CP may include a transparent electrode material. For example, the conductive pattern CP may include a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium gallium zinc oxide (IGZO), and / or indium tin zinc oxide (ITZO), but the present disclosure is not limited thereto.

[0163] The conductive pattern CP may include a conductive polymer material. For example, the conductive pattern CP may include a conductive polymer such as polyacetylene, polypyrrole, polythiophene, poly(3,4-ethylenedioxythiophene) (PEDOT), and / or polyaniline, but the present disclosure is not limited thereto.

[0164] The planarization layer PLL may be disposed on the color conversion layer CCL, the optical insulation layer QIN, and the conductive pattern CP. The planarization layer PLL may be configured (e.g., formed) as a single layer or multiple layers including at least one organic layer. For example, the planarization layer PLL may include a low refractive index organic layer to ensure the light efficiency of the sub-pixel SPXL.

[0165] The color filter layer CFL may be disposed on the planarization layer PLL. The color filter layer CFL may include a first color filter CF1, a second color filter CF2, and a third color filter CF3 that match the color of the light emitted from the sub-pixel SPXL. For example, when the sub-pixel SPXL is a red pixel that emits red light, the first color filter CF1 may be a red color filter. Additionally, when a sub-pixel adjacent to the sub-pixel SPXL that is a red pixel is a green pixel that emits green light, the second color filter CF2 may be a green color filter. Additionally, when another sub-pixel adjacent to the sub-pixel SPXL that is a red pixel is a blue pixel, the third color filter CF3 may be a blue color filter.

[0166] The first color filter CF1, the second color filter CF2, and the third color filter CF3 in the color filter layer CFL that are positioned to overlap with the black matrix pattern BM may overlap with each other and may have a light-blocking function similar to that of the black matrix pattern BM.

[0167] The overcoat layer OC may be disposed on the color filter layer CFL to cover the color filter layer CFL. The overcoat layer OC may be a planarization layer for alleviating steps (or bumps) of the underlying structure, and may include one or more suitable types (kinds) of organic materials including polyimide, benzocyclobutene-based resin, and / or acrylate.

[0168] Figure 8 is a cross-sectional view schematically showing a sub-pixel according to one or more embodiments. Regarding Figure 8 , descriptions of content (e.g., amounts) overlapping with Figure 7 are omitted (not provided) or simplified.

[0169] Referring to Figure 8 , the color conversion layer CCL may be disposed to be spaced apart and / or separated (e.g., spaced or separated) from the light-emitting element layer DPL. Compared with Figure 7 , the distance between the color conversion layer CCL and the light-emitting element LD (refer to Figure 6 ) may be increased. For example, the filler layer FLL may be disposed between the light-emitting element layer DPL and the color conversion layer CCL. The filler layer FLL may ensure the stability of the display device DD (see Figure 1 ) by preventing or reducing damage caused by impact and / or the like to the display device DD. The filler layer FLL may be formed of a material having (e.g., simultaneously having) both elasticity and adhesiveness.

[0170] The optical insulation layer QIN may be disposed to completely surround the color conversion layer CCL (e.g., around (e.g., completely around or encapsulating) the color conversion layer CCL). For example, the optical insulation layer QIN may be disposed between the color conversion layer CCL and the filler layer FLL.

[0171] According to one or more embodiments, the optical insulation layer QIN around the lower portion of the color conversion layer CCL may not be provided. In this case, the color conversion layer CCL may be adjacent to the filler layer FLL.

[0172] Figure 9 is a diagram schematically showing the deterioration phenomenon of quantum dots. Figure 9 Illustrated as an example is Figure 7 or Figure 8 the quantum dots QD shown in

[0173] Referring to Figure 9 , when light is applied to CdSe in a state where oxygen is present therein, due to photooxidation represented by Chemical Formula 1, the surface of CdSe may be passivated (or oxidized) to SeO2.

[0174] Chemical Formula 1

[0175] CdSe + O2 -> Cd 2+ + SeO2

[0176] In addition, when light is applied to CdSe in a state where moisture is present therein, the surface of CdSe can be partially passivated by photoabsorption.

[0177] When the surface of CdSe is passivated by photoabsorption and / or photooxidation, surface defects of CdSe can be removed, and the photoluminescence quantum yield (PLQY) of CdSe can be increased. However, when light is continuously applied to CdSe in a state where oxygen and moisture are present therein, CdSe may deteriorate due to photocorrosion represented by Chemical Formula 2, and the PLQY of CdSe can be decreased (e.g., rapidly decreased).

[0178] Chemical Formula 2

[0179] CdSe + H2O + O2 -> Cd 2+ + 2H + + SeO3 2-

[0180] To prevent or reduce the deterioration of the quantum dot QD (refer to Figure 7 or Figure 8 ) due to photocorrosion, it is desirable or necessary to remove at least one of oxygen, moisture, and light. However, since light is an essential element in the display device DD (see Figure 1 ), and thus light cannot be removed, other elements such as oxygen and / or moisture should be removed or need to be removed.

[0181] Figure 10 and Figure 11 are diagrams schematically showing the functions of the additive. Figure 11 As an example, it is shown that Figure 7 or Figure 8 the quantum dot QD shown in

[0182] Refer to Figure 10 , the additive ADT may include a phosphine compound. The phosphine compound can react with oxygen to form phosphine oxide. For example, the phosphine compound can remove oxygen. In particular, since the phosphine compound has a relatively high reactivity with oxygen at room temperature, the deterioration of the quantum dot QD (refer to Figure 7 or Figure 8 ) due to photocorrosion can be effectively prevented or reduced.

[0183] In one or more embodiments, the phosphine compound may be 20% (wt%) or less by weight based on the total weight (100% or 100 wt%) of the quantum dot ink composition. When the content (e.g., amount) of the phosphine compound exceeds the above range, the phosphine compound may competitively react with the ligand bound to the surface of the quantum dot QD, the ligand may desorb, and thus the properties of the quantum dot QD may be reduced or deteriorated. When the phosphine compound includes two types (species) of phosphine compounds, each may be 10% (wt%) or less by weight based on the total weight of the quantum dot ink composition.

[0184] In one or more embodiments, the boiling point of the phosphine compound may be 250 °C to 450 °C. When the boiling point of the phosphine compound is less than the above range, the phosphine compound may evaporate before the process proceeds, and thus it may be difficult to remove oxygen. Additionally, when the boiling point of the phosphine compound exceeds the above range, the phosphine compound may remain in solid form after the process, the uniformity may be reduced, and thus the properties of the color conversion layer CCL (refer to Figure 7 or Figure 8 ) may be reduced or deteriorated.

[0185] In one or more embodiments, the phosphine compound may be one type or species of phosphine compound, or two or more types (species) of phosphine compounds. For example, the phosphine compound may include any of the compounds represented by Chemical Formula 3 to Chemical Formula 13 (e.g., any one selected from the compounds represented by Chemical Formula 3 to Chemical Formula 13), or any combination of the compounds represented by Chemical Formula 3 to Chemical Formula 13 (e.g., selected from among the compounds represented by Chemical Formula 3 to Chemical Formula 13).

[0186] In one or more embodiments, the phosphine compound may be the compound represented by Chemical Formula 3.

[0187] Chemical Formula 3

[0188] P(R1)(R2)(R3)

[0189] In Chemical Formula 3, each of R1, R2, and R3 may independently include one or more suitable types (species) of functional groups including at least one of a hydrogen atom, a deuterium atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted amine group.

[0190] In one or more embodiments, the phosphine compound may be the compound represented by Chemical Formula 4.

[0191] Chemical Formula 4

[0192] PR3

[0193] In Chemical Formula 4, R may be C n H2n+1 (n is an integer selected from 2 to 8). For example, the phosphine compound may include one type or kind of trialkylphosphine compound.

[0194] In one or more embodiments, the phosphine compound may include a first compound and a second compound represented by Chemical Formula 4 above. For example, the first compound may be one in which R in Chemical Formula 4 is C p H 2p+1 (p is an integer selected from 2 to 8). For example, the second compound may be one in which R in Chemical Formula 4 is C q H 2q+1 (q is an integer selected from 2 to 8 excluding p (for example, p and q are different)). For example, the phosphine compound may include two types (kinds) of trialkylphosphine compounds with different lengths.

[0195] Table 1 shows the PLQYs of the comparative example, Example 1, Example 2, and Example 3. The comparative example represents the case where the quantum dot ink composition does not include a phosphine compound. Each of Example 1 and Example 2 represents the case where the quantum dot ink composition includes one type or kind of trialkylphosphine compound. The quantum dot ink composition of Example 1 includes trioctylphosphine (TOP), and the quantum dot ink composition of Example 2 includes tributylphosphine (TBP). Example 3 represents the case where the quantum dot ink composition includes two types (kinds) of trialkylphosphine compounds. The quantum dot ink composition of Example 3 includes trioctylphosphine (TOP) and tributylphosphine (TBP).

[0196] Table 1

[0197] No PLQY(%) Comparative Example 51 Example 1 83 Example 2 84 Example 3 86

[0198] Referring to Table 1, it can be seen that compared with the comparative example that does not include a phosphine compound, the PLQYs of Example 1 and Example 2 that include a phosphine compound are significantly increased. Without being bound by any particular theory, it is believed that this is because oxygen is removed by the phosphine compound, and thus the photo-corrosion of the quantum dots QD (refer to Figure 7 or Figure 8 ) is inhibited or reduced. In addition, it can be seen that compared with Example 1 and Example 2 that include one type or kind of trialkylphosphine compound, the PLQY of Example 3 that includes two types (kinds) of trialkylphosphine compounds is increased. Without being bound by any particular theory, it is believed that this is because trioctylphosphine (TOP) that does not evaporate due to its relatively high boiling point removes the oxygen that has not been removed due to the evaporation of tributylphosphine (TBP) with a relatively low boiling point, and thus further inhibits or reduces the photo-corrosion of the quantum dots QD.

[0199] In one or more embodiments, the phosphine compound may include two or more phosphine groups. For example, the phosphine compound may be any of the compounds represented by Chemical Formula 5 to Chemical Formula 9. Each of Chemical Formula 5, Chemical Formula 6, and Chemical Formula 7 represents a compound including two phosphine groups. Chemical Formula 7 represents a compound including a heteroatom between the two phosphine groups. Chemical Formula 8 represents a compound including three phosphine groups, and Chemical Formula 9 represents a compound including four phosphine groups.

[0200] Chemical Formula 5

[0201]

[0202] Chemical Formula 6

[0203]

[0204] Chemical Formula 7

[0205]

[0206] Chemical Formula 8

[0207]

[0208] Chemical Formula 9

[0209]

[0210] In one or more embodiments, the phosphine compound may include a ligand containing a phosphine group. For example, the phosphine compound may be any of the compounds represented by Chemical Formula 10 and Chemical Formula 11 (e.g., any one selected from the compounds represented by Chemical Formula 10 and Chemical Formula 11).

[0211] Chemical Formula 10

[0212]

[0213] Chemical Formula 11

[0214]

[0215] In one or more embodiments, the phosphine compound may include a monomer containing a phosphine group. For example, the phosphine compound may be any of the compounds represented by Chemical Formula 12 and Chemical Formula 13 (e.g., any one selected from the compounds represented by Chemical Formula 12 and Chemical Formula 13).

[0216] Chemical Formula 12

[0217]

[0218] Chemical Formula 13

[0219]

[0220] Refer to Figure 11 , the adsorption force a between CdSe and oxygen can be greater than the adsorption force b between the phosphine compound of additive ADT and oxygen. However, since the phosphine compound and CdSe competitively adsorb oxygen, the phosphine compound can reduce the amount of oxygen adsorbed on CdSe. Additionally, the adsorption force b between the phosphine compound and oxygen can be greater than the adsorption force c between the phosphine compound and CdSe. Therefore, the phosphine compound can effectively remove oxygen without significantly affecting CdSe.

[0221] According to one or more embodiments of the present disclosure, by adding a phosphine compound to the quantum dot ink composition to remove oxygen, the emission efficiency of the quantum dots can be improved.

[0222] However, the aspects and features of the present disclosure are not limited to the aspects and features described above, and within the spirit and scope of the present disclosure, one or more other suitable aspects and features will be understood by those of ordinary skill in the art.

[0223] In the context of the present application, and unless otherwise defined, the terms "use", "using", and "used" may be considered synonymous with the terms "utilize", "utilizing", and "utilized", respectively.

[0224] When describing embodiments of the inventive concept, the use of "may" refers to "one or more embodiments of the inventive concept".

[0225] As used herein, the term "about" and similar terms are used as approximate terms and not as terms of degree, and are intended to account for the inherent deviations of measured or calculated values that would be recognized by those of ordinary skill in the art. Considering the measurements involved and the errors associated with the measurements of a particular quantity (i.e., the limitations of the measurement system), "about" as used herein includes the stated value and means within an acceptable deviation for the particular value as determined by those of ordinary skill in the art. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0226] In addition, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range. For example, a range of "1.0 to 10.0" is intended to include all sub-ranges between the recited minimum value of 1.0 and the recited maximum value of 10.0 (and including the recited minimum value of 1.0 and the recited maximum value of 10.0), that is, all sub-ranges having a minimum value greater than or equal to 1.0 and a maximum value less than or equal to 10.0 (such as, by way of example, 2.4 to 7.6). Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein, and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, the applicant reserves the right to amend this specification (including the claims) to expressly recite any sub-ranges subsumed within the ranges expressly recited herein.

[0227] The battery management system (BMS) device and / or any other related devices or components according to embodiments of the present invention described herein may be implemented using any suitable hardware, firmware (e.g., application specific integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of the device may be formed on one integrated circuit (IC) chip or on separate multiple IC chips. In addition, the various components of the device may be implemented on a flexible printed circuit film, tape carrier package (TCP), printed circuit board (PCB), or formed on one substrate. Additionally, the various components of the device may be processes or threads running on one or more processors, in one or more computing devices, executing computer program instructions, and interacting with other system components for performing the various functions described herein. The computer program instructions are stored in a memory, which may be implemented in a computing device using standard memory devices (such as, by way of example, random access memory (RAM)). The computer program instructions may also be stored in other non-transitory computer-readable media (such as, by way of example, CD-ROM, flash drive, or the like). Further, those skilled in the art should recognize that the functions of the various computing devices may be combined or integrated into a single computing device, or the functions of a particular computing device may be distributed across one or more other computing devices without departing from the scope of the present disclosure.

[0228] The embodiments described in more detail above are provided to explain the present disclosure, but these embodiments are not intended to limit the scope of the present disclosure. Those skilled in the art should understand that one or more appropriate changes, substitutions, and alterations may be made therein without departing from the scope of the present disclosure as defined by the appended claims and their equivalents.

[0229] The scope of the present disclosure is not limited by the detailed description in this specification and shall be defined by the appended claims and their equivalents. In addition, all changes or modifications derived from the claims and their equivalents shall be construed as being included within the scope of the present disclosure. Embodiments may be combined to form additional embodiments.

Claims

1. A quantum dot ink composition, comprising: Quantum dots; A solvent; And A phosphine compound.

2. The quantum dot ink composition according to claim 1, wherein, The phosphine compound is 20% by weight or less based on the total weight of the quantum dot ink composition.

3. The quantum dot ink composition according to claim 1, wherein, The phosphine compound comprises one phosphine compound.

4. The quantum dot ink composition according to claim 1, wherein The phosphine compound comprises two or more phosphine compounds.

5. The quantum dot ink composition according to claim 1, wherein, The phosphine compound is a compound represented by PR3, where R is C n H 2n+1 and n is an integer selected from 2 to 8.

6. The quantum dot ink composition according to claim 1, wherein The phosphine compound includes a first compound represented by P(R1)3 and a second compound represented by P(R2)3, where R1 is C p H 2p+1 and p is an integer selected from 2 to 8, where R2 is C q H 2q+1 and q is an integer selected from 2 to 8, and p and q are different.

7. The quantum dot ink composition according to claim 6, wherein, Each of the first compound and the second compound is 10% by weight or less based on the total weight of the quantum dot ink composition.

8. The quantum dot ink composition according to claim 1, further comprising: A monomer, a dispersant, a scattering agent, and an initiator.

9. The quantum dot ink composition according to claim 1, wherein, The phosphine compound reacts with oxygen to inhibit photo-corrosion of the quantum dots.

10. The quantum dot ink composition according to claim 1, wherein, The quantum dots comprise II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, IV-VI group semiconductor compounds, group IV elements or compounds, or any combination thereof.

11. A display device, comprising: A substrate; A pixel circuit layer on the substrate; A light-emitting element layer on the pixel circuit layer; And A color conversion layer comprising the quantum dot ink composition, wherein the quantum dot ink composition comprises: Quantum dots; A solvent; and A phosphine compound.

12. The display device according to claim 11, wherein, The color conversion layer is adjacent to the light-emitting element layer.

13. The display device according to claim 11, wherein The phosphine compound is 20% by weight or less based on the total weight of the quantum dot ink composition.

14. The display device according to claim 11, wherein, The phosphine compound comprises one phosphine compound.

15. The display device according to claim 11, wherein, The phosphine compound comprises two or more phosphine compounds.

16. The display device according to claim 11, wherein, The phosphine compound is a compound represented by PR3, where R is C n H 2n+1 and n is an integer selected from 2 to 8.

17. The display device according to claim 11, wherein, The phosphine compounds include a first compound represented by P(R1)3 and a second compound represented by P(R2)3, where R1 is C p H 2p+1 and p is an integer selected from 2 to 8, where R2 is C q H 2q+1 and q is an integer selected from 2 to 8, and p and q are different.

18. The display device according to claim 17, wherein, Each of the first compound and the second compound is 10% by weight or less based on the total weight of the quantum dot ink composition.

19. The display device according to claim 11, wherein, The quantum dot ink composition further comprises a monomer, a dispersant, a scattering agent, and an initiator.

20. The display device according to claim 11, wherein, The phosphine compound reacts with oxygen to inhibit photo-corrosion of the quantum dots.

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