Preparation method of color filter, exposure device and electronic equipment

Abstract

The embodiment of the invention provides a preparation method of a color filter, an exposure device, electronic equipment, a non-transient computer readable storage medium and a computer program product, relates to the technical field of display, and is used for reducing the difference between the size of a color light resistor and a preset size. The preparation method comprises the following steps: preparing a first color photoresist in a first area of a substrate with first preset exposure; the first preset exposure is determined according to a preset size of the first color photoresist in a first preset direction, and the first preset direction is any direction parallel to the substrate. Acquiring a first actual size of the first color photoresist of the first area in the first preset direction; and determining first corrected exposure according to the first actual size, the preset size and the first preset exposure. And preparing a first color photoresist in the second area of the substrate according to the first correction exposure. The preparation method is used for preparing the color filter of the display panel.

Description

Technical Field

[0001] The present disclosure relates to the field of display technologies, and in particular, to a method for preparing a color filter, an exposure device, an electronic device, a non-transitory computer-readable storage medium, and a computer program product. Background Art

[0002] With the development of display technologies, high resolution and high transmittance are one of the mainstream directions for future displays, especially in application fields such as TPC, vehicle-mounted, and medical displays that have high requirements for display screens.

[0003] For products with high resolution and high transmittance, the size of the black matrix lines and the size of the color photoresist tend to become smaller and smaller. The deviation between the size of the color photoresist and the preset size has a greater impact on the display quality of the display panel. When the deviation between the size of the color photoresist and the preset size is large, problems such as light leakage, color mixing, and color overlapping are likely to occur during the display process of the display panel. Summary of the Invention

[0004] The purpose of the embodiments of the present disclosure is to provide a method for preparing a color filter, an exposure device, an electronic device, a non-transitory computer-readable storage medium, and a computer program product, which are used to reduce the difference between the size of the color photoresist and the preset size.

[0005] To achieve the above purpose, the embodiments of the present disclosure provide the following technical solutions:

[0006] On the one hand, a method for preparing a color filter is provided. The preparation method includes: preparing a first color photoresist in a first region of a substrate with a first preset exposure amount; the first preset exposure amount is determined according to the preset size of the first color photoresist in a first preset direction, and the first preset direction is any direction parallel to the substrate. Obtaining a first actual size of the first color photoresist in the first region in the first preset direction. Determining a first corrected exposure amount according to the first actual size, the preset size, and the first preset exposure amount. Preparing the first color photoresist in a second region of the substrate with the first corrected exposure amount.

[0007] Understandably, the exposure amount is related to the size of the first color photoresist obtained by preparation. By obtaining the first actual size and comparing the first actual size with the preset size, the relative size relationship and the difference between the first actual size and the preset size can be obtained. In this way, according to the relative size relationship between the first actual size and the preset size, the relative size relationship between the first preset exposure amount and the required exposure amount can be obtained; according to the difference between the first actual size and the preset size, the difference between the first preset exposure amount and the required exposure amount can be obtained; thus, the exposure amount can be corrected according to the relative size relationship and the difference between the first preset exposure amount and the required exposure amount to obtain the first corrected exposure amount, making the first corrected exposure amount closer to or equal to the required exposure amount. In this way, the size of the first color photoresist in the second region prepared using the first corrected exposure amount can be closer to the preset size, and the difference between the size of the color photoresist and the preset size can be reduced.

[0008] In some embodiments, determining the first corrected exposure amount according to the first actual size, the preset size, and the first preset exposure amount includes: determining an exposure amount compensation value according to the difference between the first actual size and the preset size and the preset corresponding relationship; the preset corresponding relationship is the corresponding relationship between the exposure amount and the size of the first color photoresist in the first preset direction. The first corrected exposure amount is determined according to the exposure amount compensation value and the first preset exposure amount.

[0009] In some embodiments, the first region includes a plurality of first sub-regions arranged in an array, the second region includes a plurality of second sub-regions arranged in an array, and the positions of the plurality of first sub-regions in the first region correspond one by one to the positions of the plurality of second sub-regions in the second region; each first sub-region and each second sub-region are respectively used to form a color filter of a display panel. The preparation method specifically includes: preparing the first color photoresist in each first sub-region with the first preset exposure amount. Obtaining the first actual size of the first color photoresist in each first sub-region in the first preset direction. Determining the first corrected exposure amount of the second sub-region corresponding to each first sub-region according to the first actual size, the preset size, and the first preset exposure amount of the first color photoresist in each first sub-region. Preparing the first color photoresist in the corresponding second sub-region with the first corrected exposure amount of each second sub-region.

[0010] In some embodiments, the first color photoresist is arranged in an array, and the first preset direction is the row direction or the column direction of the arrangement of the first color photoresist array.

[0011] In some embodiments, the preparation method further includes: obtaining the second actual size of the first color photoresist in the second region in the first preset direction. Determining the second corrected exposure amount according to the second actual size, the preset size, and the first corrected exposure amount. Preparing the first color photoresist in the third region of the substrate with the second corrected exposure amount.

[0012] In some embodiments, the preparation method further includes: preparing a black matrix layer in a first region of a substrate; the black matrix layer includes a plurality of black matrix bars, and the plurality of black matrix bars intersect to define a plurality of openings, a first color photoresist is disposed in one opening, and the black matrix bars surrounding one opening form a black matrix frame. Obtain the distance between the boundary of the first color photoresist in the first region and the outer boundary of the black matrix frame where it is located. Determine a position correction parameter according to the distance and a reference distance; the position correction parameter includes a correction direction and a position correction value along the correction direction. Adjust the position of the mask according to the position correction parameter, and use the mask to prepare the first color photoresist in a second region of the substrate.

[0013] In some embodiments, the boundary of the first color photoresist includes two first boundaries opposite to each other in a first direction, and the first direction is the row direction in which a plurality of first color photoresists are arranged in an array; the outer boundary of the black matrix frame includes two third boundaries opposite to each other in the first direction. The distance includes a first distance between each first boundary and the adjacent third boundary, and the position correction parameter includes a first correction direction and a first position correction value. Determining the position correction parameter according to the distance and the reference distance includes: determining the first correction direction according to the magnitude relationship between the first distance and the reference distance; the first correction direction includes left or right along the first direction; determining the first position correction value according to the difference between the first distance and the reference distance. Adjusting the position of the mask according to the position correction parameter includes: adjusting the position of the mask along the first correction direction according to the first position correction value.

[0014] In some embodiments, the boundary of the first color photoresist includes two second boundaries opposite to each other in a second direction, and the second direction is the column direction in which a plurality of first color photoresists are arranged in an array; the outer boundary of the black matrix frame includes two fourth boundaries opposite to each other in the second direction. The distance includes a second distance between each second boundary and the adjacent fourth boundary, and the position correction parameter includes a second correction direction and a second position correction value. Determining the position correction parameter according to the distance and the reference distance includes: determining the second correction direction according to the magnitude relationship between the second distance and the reference distance; the second correction direction includes up or down along the second direction; determining the second position correction value according to the difference between the second distance and the reference distance. Adjusting the position of the mask according to the position correction parameter includes: adjusting the position of the mask along the second correction direction according to the second position correction value.

[0015] In some embodiments, the value range of the reference distance is 1 / 3 to 2 / 3 of the width of the black matrix bar.

[0016] In some embodiments, the preparation method further includes: obtaining the second pitch corresponding to each of the first target photoresist and the second target photoresist; the first target photoresist and the second target photoresist are two first-color photoresists arranged along a first direction in a first region. Determine the first offset of the first-color photoresist in the first region according to the second pitch corresponding to each of the first target photoresist and the second target photoresist, and the distance value of the first target photoresist and the second target photoresist in the first direction; the first offset is the angle between the second boundary of the first-color photoresist and the first direction. Determine the first offset correction parameter according to the first offset; the first offset correction parameter includes the rotation direction of the mask and the rotation angle along the rotation direction. Adjust the position of the mask according to the first offset correction parameter, and use the mask to prepare the first-color photoresist in a second region of the substrate.

[0017] In some embodiments, the preparation method further includes: obtaining the first pitch corresponding to each of the first target photoresist and the third target photoresist; the first target photoresist and the third target photoresist are two first-color photoresists arranged along a second direction in a first region. Determine the second offset of the first-color photoresist in the first region according to the first pitch corresponding to each of the first target photoresist and the third target photoresist, and the distance value of the first target photoresist and the third target photoresist in the second direction; the second offset is the angle between the first boundary of the first-color photoresist and the second direction. Determine the second offset correction parameter according to the second offset; the second offset correction parameter includes the rotation direction of the mask and the rotation angle along the rotation direction. Adjust the position of the mask according to the second offset correction parameter, and use the mask to prepare the first-color photoresist in a second region of the substrate.

[0018] Obtain the first pitch corresponding to each of the first target photoresist and the third target photoresist; the first target photoresist and the third target photoresist are two first-color photoresists arranged along a second direction in a first region.

[0019] In some embodiments, the first region includes a plurality of first sub-regions arranged in an array, and a test region located outside the plurality of first sub-regions. The test region is provided with a plurality of first-color photoresists. The distance between the boundary of the first-color photoresist in the first region and the outer boundary of the black matrix frame where it is located is obtained based on the first-color photoresist in the test region.

[0020] On the other hand, an exposure device is provided. The exposure device includes: a reaction chamber, an exposure machine, and a controller. The reaction chamber is used to accommodate the color filter to be prepared. The exposure machine is used to expose the film layer formed on the color filter. The controller is used to execute one or more steps of the preparation method of the color filter as described in any of the above embodiments.

[0021] The above exposure device has the same beneficial technical effects as the preparation method of the color filter provided in some of the above embodiments, and will not be described in detail here.

[0022] In another aspect, an electronic device is provided. The electronic device includes: a processor and a memory for storing instructions executable by the processor. The processor is configured to execute the instructions to implement one or more steps of the method for preparing a color filter as described in any of the above embodiments.

[0023] The above electronic device has the same beneficial technical effects as the method for preparing a color filter provided in some of the above embodiments, and will not be elaborated here.

[0024] In another aspect, a non-transitory computer-readable storage medium is provided. Instructions are stored on the non-transitory computer-readable storage medium; wherein, when the instructions in the non-transitory computer-readable storage medium are executed by a processor of an electronic device, the electronic device is enabled to execute one or more steps of the method for preparing a color filter as described in any of the above embodiments.

[0025] The above non-transitory computer-readable storage medium has the same beneficial technical effects as the method for preparing a color filter provided in some of the above embodiments, and will not be elaborated here.

[0026] In another aspect, a computer program product is provided. The computer program product includes computer instructions, wherein when the computer instructions are executed by a processor of an electronic device, one or more steps of the method for preparing a color filter as described in any of the above embodiments are implemented.

[0027] The above computer program product has the same beneficial technical effects as the method for preparing a color filter provided in some of the above embodiments, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the present disclosure, the drawings required to be used in some embodiments of the present disclosure will be briefly introduced below. Obviously, the drawings in the following description are only the drawings of some embodiments of the present disclosure, and those of ordinary skill in the art can also obtain other drawings according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual dimensions of the products, the actual processes of the methods, the actual timings of the signals, etc. involved in the embodiments of the present disclosure.

[0029] Figure 1A Structural diagram of a color filter according to some embodiments;

[0030] Figure 1B Structural diagram of a color filter according to some other embodiments;

[0031] Figure 2 Structural diagram of an exposure device according to some embodiments;

[0032] Figure 3A Structural diagram of a color filter according to some other embodiments;

[0033] Figure 3B Structural diagram of a color filter according to some other embodiments;

[0034] Figure 4A Structural diagram of a color filter according to some other embodiments;

[0035] Figure 4B Enlarged view of a display image of a display panel according to some embodiments;

[0036] Figure 5A Structural diagram of a color filter according to some other embodiments;

[0037] Figure 5B Structural diagram of a color filter according to some other embodiments;

[0038] Figure 6A Structural diagram of a color filter according to some other embodiments;

[0039] Figure 6B Display image of a display panel according to some embodiments;

[0040] Figure 7 Display image of a display panel according to some other embodiments;

[0041] Figure 8 Layout diagram of a first region and a second region according to some embodiments;

[0042] Figure 9 Flowchart of a method for manufacturing a color filter according to some embodiments;

[0043] Figure 10 State diagram of a photomask according to some embodiments;

[0044] Figure 11 Size distribution diagram of a color photoresist according to some embodiments;

[0045] Figure 12 Flowchart of a method for manufacturing a color filter according to some other embodiments;

[0046] Figure 13 Arrangement diagram of a first color photoresist according to some embodiments;

[0047] Figure 14 Structural diagram of a mercury lamp box according to some embodiments;

[0048] Figure 15 Layout diagram of a color photoresist in a test area according to some embodiments;

[0049] Figure 16 Flow chart of a method for manufacturing a color filter according to some additional embodiments;

[0050] Figure 17 Structural diagram of a black matrix layer according to some embodiments;

[0051] Figure 18 Structural diagram of a color filter according to some additional embodiments;

[0052] Figure 19 Structural diagram of a color filter according to some additional embodiments;

[0053] Figure 20 Structural diagram of a color filter according to some additional embodiments;

[0054] Figure 21 Position diagram of a mask according to some embodiments;

[0055] Figure 22 Arrangement diagram of a first color photoresist in a first region according to some embodiments;

[0056] Figure 23 Flow chart of a method for manufacturing a color filter according to some additional embodiments;

[0057] Figure 24 Position diagram of a mask according to some additional embodiments;

[0058] Figure 25 Flow chart of a method for manufacturing a color filter according to some additional embodiments;

[0059] Figure 26 Structural diagram of an exposure device according to some additional embodiments;

[0060] Figure 27 Structural diagram of an electronic device according to some embodiments. Detailed implementation manners

[0061] Next, the technical solutions in some embodiments of the present disclosure will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0062] Unless the context otherwise requires, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, i.e., "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples", or "some examples", etc. are intended to indicate that the specific features, structures, materials, or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials, or characteristics described above may be included in any one or more embodiments or examples in any appropriate manner.

[0063] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise specified, the meaning of "a plurality" is two or more.

[0064] The use of "adapted to" or "configured to" herein means open and inclusive language, which does not exclude a device adapted to or configured to perform additional tasks or steps.

[0065] In addition, the use of "based on" means open and inclusive because a process, step, calculation, or other action "based on" one or more of the stated conditions or values may, in practice, be based on additional conditions or values beyond those stated.

[0066] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of regions are exaggerated for clarity. Accordingly, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Thus, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include shape deviations caused by, for example, manufacturing. For example, an etched region shown as rectangular will typically have curved features. Thus, the regions shown in the drawings are schematic in nature, and their shapes are not intended to depict the actual shape of the regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0067] It should be noted that the label "A / B" appearing in the drawings means that the structure / region A and the structure / region B can be referred to by the same structure / region. For example, Figure 15 in "L / L1", it means that both the spacing L and the first spacing L1 can be referred to by this distance. The label "A~B" appearing in the drawings means that the structure / region A belongs to the structure / region B, that is, the structure referred to by this label is both the structure A and the structure B. For example, Figure 1AIn “221~220”, the structure referred to by this label is the black matrix bar 221, and the black matrix bar 221 belongs to the black matrix layer 220.

[0068] As a color filtering unit in the display panel, the color filter 200 can play a role in colorization. As Figure 1A and Figure 1B shown, the color filter 200 includes a substrate 210 (for example, a glass substrate), a black matrix layer 220, and a color photoresist layer 100.

[0069] Among them, the black matrix layer 220 is disposed on the substrate 210, and the material of the black matrix layer 220 is a light-absorbing material, which can be used at least to absorb the light entering the display panel from the outside, so as to improve the display contrast of the display panel.

[0070] Exemplarily, the black matrix layer 220 includes a plurality of black matrix bars 221, and the black matrix bars 221 are staggered to define a plurality of openings Q.

[0071] The color photoresist layer 100 includes various color photoresists, and the number of each color photoresist can be a plurality of arranged in an array. For example, the color photoresist layer 100 includes a blue photoresist 101, a red photoresist 102, and a green photoresist 103, and the numbers of the blue photoresist 101, the red photoresist 102, and the green photoresist 103 are all a plurality of arranged in an array. When the black matrix layer 220 defines an opening Q, a color photoresist is disposed in one opening Q.

[0072] The above color photoresists can be configured to: allow the light of the same color as it to pass through and filter out the light of different colors from it. For example, the blue photoresist 101 can allow the blue light in the external light to enter the blue sub-pixel area in the display panel, and then be emitted after reflection, so as to achieve the effect of increasing the light efficiency; the blue photoresist 101 can also filter out the other light except the blue light in the external light, so as to improve the color purity of the light emitted from the blue sub-pixel area, and can make the color gamut of the display panel higher.

[0073] Exemplarily, the material of the color photoresist can include a photoresist resin, and a dye or pigment dispersed in the photoresist resin. For example, the material of the blue photoresist 101 can include a photoresist resin, and a blue dye or blue pigment dispersed in the photoresist resin.

[0074] In some embodiments, the blue photoresist 101, the red photoresist 102, and the green photoresist 103 in the color filter 200 are prepared by an exposure machine 310 (for example, a proximity exposure machine), and the exposure principle of the exposure machine 310 is as Figure 2As shown, where 110i represents the thin film for forming the color photoresist, including the photoresist resin. The exposure mercury lamp 311 is disposed above the mask 400 (MASK). The light emitted by the exposure mercury lamp 311 passes through the openings on the mask 400 and irradiates the film layer on the substrate 210 to achieve the purpose of exposure.

[0075] In some embodiments, the size of the substrate 210 is relatively large. For the exposure process of the same color photoresist disposed on the substrate 210, multiple (e.g., four) processes are adopted. After the exposure of one area is completed in the previous process, the mask is translated to another area for the next process to achieve the exposure of another area.

[0076] For products with high resolution and high transmittance, the sizes of the black matrix lines 221 and the color photoresists tend to be smaller and smaller. The deviation between the size of the color photoresist and the preset size has a greater impact on the display quality of the display panel. When the deviation between the size of the color photoresist and the preset size is large, during the display process of the display panel, problems such as light leakage, color mixing, and color overlapping are likely to occur. Among them, the light leakage problem can be identified by an Automated Optical Inspection (AOI) device, but problems such as color mixing and color overlapping mura are not easily identified. The following gives an example of the impact of the deviation between the size of the color photoresist and the preset size on the display quality.

[0077] In some implementation manners, the relative positions of the formed blue photoresist 101, red photoresist 102, and green photoresist 103 are as Figure 3A and Figure 3B shown. In some other implementation manners, the relative positions of the formed blue photoresist 101, red photoresist 102, and green photoresist 103 are as Figure 4A shown, where the arrangement directions of the blue photoresist 101, red photoresist 102, and green photoresist 103 are parallel to the direction of the data line (Data). From Figure 3A and Figure 3B it can be seen that the size of the green photoresist 103 is smaller than the set size, resulting in a larger spacing between the blue photoresist 101 and the green photoresist 103. At this time, when the display panel is displaying, light leakage is likely to occur in the area of the green photoresist 103 close to the blue photoresist 101. From Figure 4A it can be seen that the size of the blue photoresist 101 is smaller than the set size, resulting in a larger spacing between the blue photoresist 101 and the green photoresist 103. In this case, as Figure 4B shown, when the display panel is displaying, light leakage occurs in the area of the blue photoresist 101 close to the green photoresist 103.

[0078] In some other implementation manners, the relative positions of the formed blue photoresist 101, red photoresist 102, and green photoresist 103 are as shown in Figure 5A and Figure 5B ; in some other implementation manners, the relative positions of the formed blue photoresist 101, red photoresist 102, and green photoresist 103 are as shown in Figure 6A ; wherein, the arrangement directions of the blue photoresist 101, red photoresist 102, and green photoresist 103 are parallel to the direction of the data line (Data). As can be seen from Figure 5A and Figure 5B , the size of the blue photoresist 101 is larger than the set size, causing the blue photoresist 101 to overlap with the green photoresist 103. At this time, when the display panel is displaying, color mixing is likely to occur in the area between the green photoresist 103 and the blue photoresist 101. As can be seen from Figure 6A , the overlap between the blue photoresist 101 and the green photoresist 103 makes color overlapping likely to occur in the area between the right dotted lines; the overlap between the blue photoresist 101 and the red photoresist 102 makes color mixing likely to occur in the area between the right dotted lines; as shown in Figure 6B , color mixing occurs when the display panel is displaying.

[0079] In some embodiments, as shown in Figure 1A and Figure 1B , a black matrix frame 222 is formed by black matrix bars 221 surrounding an opening Q; there is a spacing between the boundary of the color photoresist disposed in the opening Q and the outer boundary of the black matrix frame 222 where it is located. In some examples, the difference between the width of the black matrix bar 221 and the spacing can be defined as the overlay parameter of the color photoresist.

[0080] In some other implementation manners, since the ranges of the blue photoresist 101, red photoresist 102, and green photoresist 103 are different, the overlay parameters of different color photoresists are not the same. At this time, when the display panel is displaying, color overlapping defects will occur, and macroscopically, it appears as mura. In some cases, the display image when the display panel has mura is as shown in Figure 7 .

[0081] Based on this, some embodiments of the present disclosure provide a method for preparing a color filter 200, which is used to improve the size uniformity of the color photoresist, so as to solve the problem that the poor size uniformity of the color photoresist affects the display quality of the display panel.

[0082] Combined with FIG. 1, Figure 8 and Figure 13 , as shown in Figure 9 , the preparation method includes S100 to S400.

[0083] S100: Prepare the first - color photoresist 110 in the first region AA1 of the substrate 210 with a first - preset exposure amount; the first - preset exposure amount is determined according to the preset dimension of the first - color photoresist 110 in the first - preset direction X, and the first - preset direction X is any direction parallel to the substrate 210.

[0084] Exemplarily, the first - color photoresist 110 can be any color photoresist. For example, the first - color photoresist 110 can be any one of a blue photoresist 101, a red photoresist 102, and a green photoresist 103.

[0085] Exemplarily, the material of the substrate 210 can be a rigid material, such as glass, to achieve a rigid display; or, the material of the substrate 210 can also be a flexible material, such as polyimide (PI) or polyethylene glycol terephthalate (PET), to achieve a flexible display.

[0086] In some examples, the relationship between the first - preset exposure amount and the preset dimension of the first - color photoresist 110 in the first - preset direction X can be determined according to the material properties of the first - color photoresist 110, etc. For example, if the preset dimension of the first - color photoresist 110 in the first - preset direction X is 41.5 μm, the first - preset exposure amount can be 40 mj.

[0087] S200: Obtain the first actual dimension AD of the first - color photoresist 110 in the first region AA1 in the first - preset direction X.

[0088] The embodiments of the present disclosure do not limit the method for obtaining the first actual dimension AD of the first - color photoresist 110 in the first region AA1 in the first - preset direction X. For example, as a possible obtaining method, an optical device capable of realizing critical dimension measure (CDME) can be used to measure the first actual dimension AD of the first - color photoresist 110 in the first - preset direction X.

[0089] S300: Determine the first corrected exposure amount according to the first actual dimension AD, the preset dimension, and the first - preset exposure amount.

[0090] S400: Prepare the first - color photoresist 110 in the second region AA2 of the substrate 210 with the first corrected exposure amount.

[0091] Understandably, the exposure amount is related to the size of the first color photoresist 110 obtained by preparation. By obtaining the first actual size AD and comparing the first actual size AD with the preset size, the relative magnitude relationship and the difference between the first actual size AD and the preset size can be obtained. In this way, according to the relative magnitude relationship between the first actual size AD and the preset size, the relative magnitude relationship between the first preset exposure amount and the required exposure amount can be obtained; according to the difference between the first actual size AD and the preset size, the difference between the first preset exposure amount and the required exposure amount can be obtained; thus, according to the relative magnitude relationship and the difference between the first preset exposure amount and the required exposure amount, the exposure amount can be corrected to obtain the first corrected exposure amount, making the first corrected exposure amount closer to the required exposure amount or equal to the required exposure amount. In this way, the size of the first color photoresist 110 in the second region AA2 prepared using the first corrected exposure amount can be closer to the preset size, and the difference between the size of the color photoresist and the preset size can be reduced.

[0092] For example, the greater the exposure amount, the greater the size of the first color photoresist 110 obtained by preparation. By obtaining the first actual size AD and comparing the first actual size AD with the preset size, it is known that the first actual size AD is greater than the preset size and the difference between the two is relatively large; based on these circumstances, it can be known that the first preset exposure amount is greater than the required exposure amount and the difference between the first preset exposure amount and the required exposure amount is relatively large; therefore, the exposure amount can be increased by a relatively large margin to obtain the first corrected exposure amount, making the first corrected exposure amount closer to the required exposure amount or equal to the required exposure amount, and thus making the size of the first color photoresist 110 in the second region AA2 closer to the preset size.

[0093] In some embodiments, in combination with Figure 13 , according to the first actual size AD, the preset size, and the first preset exposure amount, the first corrected exposure amount (i.e., S300) is determined, including S310 to S320.

[0094] S310: Determine the exposure amount compensation value according to the difference between the first actual size AD and the preset size and the preset corresponding relationship; the preset corresponding relationship is the corresponding relationship between the exposure amount and the size of the first color photoresist 110 in the first preset direction X.

[0095] S320: Determine the first corrected exposure amount according to the exposure amount compensation value and the first preset exposure amount.

[0096] As a possible preset correspondence, the following relationship is satisfied between the exposure amount H and the dimension D of the first color photoresist 110 in the first preset direction X: D = a×H + b, where both a and b are constants and are related to the material properties of the first color photoresist 110, etc. Therefore, by measuring the material properties of the first color photoresist 110, etc. before the exposure process, the values of a and b can be obtained, and the preset correspondence can be obtained.

[0097] Based on the above correspondence, the following relationship is satisfied among the exposure amount compensation value △H, the preset dimension YD, and the first actual dimension AD: (YD - AD) = a×△H. Therefore, according to the difference between the preset dimension YD and the first actual dimension AD, and the constant a in the preset correspondence, the exposure amount compensation value △H can be calculated. Then, by summing the exposure amount compensation value △H and the first preset exposure amount, the first corrected exposure amount can be obtained.

[0098] For example, the following relationship is satisfied between the exposure amount H and the dimension D of the first color photoresist 110 in the first preset direction X: D = 0.1886×H + 34.15. Then, the following relationship is satisfied among the exposure amount compensation value △H, the preset dimension YD, and the first actual dimension AD: (YD - AD) = 0.1886×△H. When the preset dimension is 41.5μm and the first actual dimension AD is 42.62μm, the calculated exposure amount compensation value △H is -5.94mj. Then, by summing the exposure amount compensation value -5.9mj and the first preset exposure amount 40mj, the first corrected exposure amount 34.1mj can be obtained.

[0099] It can be understood that by setting S300 to include two steps S310 and S320, the first corrected exposure amount can be determined using the first actual dimension AD, the preset dimension, and the first preset exposure amount, thereby making the first corrected exposure amount closer to or equal to the required exposure amount, and further making the dimension of the first color photoresist 110 in the second region AA2 closer to the preset dimension.

[0100] In some examples, such as Figure 2 As shown, there is an exposure gap G (Gap) between the exposure mercury lamp 311 and the substrate 210. Due to the diffraction effect of light, the larger the exposure gap G, the larger the dimension of the exposed color photoresist; correspondingly, the smaller the exposure gap G, the smaller the dimension of the exposed color photoresist. To prevent the substrate 210 from scratching the mask 400, the setting range of the exposure gap G is 180μm to 400μm, such as 180μm, 200μm, 230μm, 250μm, 300μm, 350μm, or 400μm, etc. The dimension of the mask 400 is, for example, 1220mm×1400mm.

[0101] In some implementation manners, such as Figure 10As shown, the fixing method of the exposure machine 310 and the mask 400 is: adsorbing the four sides of the mask 400 to the exposure machine 310. In this way, due to the weight of the mask 400 itself, the center of the mask 400 will bend and sag, combined with Figure 2 , it is shown that the middle part of the mask 400 is relatively close to the substrate 210, and the peripheral part is relatively far from the substrate 210, resulting in a certain difference between the exposure gaps corresponding to the middle part and the peripheral part of the mask 400. In the formed color photoresist, the size of the color photoresist corresponding to the middle part of the mask 400 is smaller, and the size of the color photoresist corresponding to the peripheral part of the mask 400 is larger, making the size uniformity of the formed color photoresist poor.

[0102] In some cases, combined with Figure 2 and Figure 10 , four processes are used to complete the exposure of a certain color photoresist in four regions respectively, and the four regions are the four corner regions of the substrate 210; the distribution diagram of the sizes of the formed color photoresists is as shown in Figure 11 . As can be seen from Figure 11 , the size change trends of the color photoresists in the four regions are relatively consistent, with the middle part having a smaller size and the peripheral part having a larger size. It can be seen that the central bending and sagging of the mask 400 result in poor size uniformity of the formed color photoresist. The influence of the central bending and sagging of the mask 400 on the color photoresist can be seen from Figure 7 . As can be seen from Figure 7 , the shape of the mura region is approximately square (the position shown by the circular frame), corresponding to the bending shape of the mask 400.

[0103] Therefore, in some examples, combined with Figure 8 and Figure 13 , the first region AA1 includes a plurality of first sub-regions, the second region AA2 includes a plurality of second sub-regions, and the positions of the plurality of first sub-regions in the first region AA1 and the positions of the plurality of second sub-regions in the second region AA2 correspond one by one. The preparation method specifically includes:

[0104] In S100, a first color photoresist 110 is prepared in each first sub-region with a first preset exposure amount.

[0105] In S200, the first actual size AD of the first color photoresist 110 in each first sub-region in the first preset direction X is obtained.

[0106] In S300, according to the first actual size AD, the preset size and the first preset exposure amount of the first color photoresist 110 in each first sub-region, the first corrected exposure amount of the second sub-region corresponding to each first sub-region is determined.

[0107] In the S400, the first color photoresist 110 is prepared in the corresponding second partition with the first corrected exposure amount of each second partition.

[0108] Through the above settings, the sizes of the first color photoresists 110 in multiple second partitions of the second region AA2 of the substrate 210 can be made closer to the preset size, and the influence of the central bending and sagging of the mask 400 on the size of the color photoresist can be compensated by correcting the exposure amount.

[0109] The embodiments of the present disclosure do not limit the division of multiple first partitions in the first region AA1 and multiple second partitions in the second region AA2.

[0110] In some embodiments, in combination with Figure 8 and Figure 13 , during the process of preparing the first color photoresist 110 in the first region AA1, the first color photoresists 110 of multiple display panels are formed; correspondingly, during the process of preparing the first color photoresist 110 in the second region AA2, the first color photoresists 110 of multiple display panels are formed. At this time, the exposure amounts of the first color photoresists 110 of multiple display panels can be corrected respectively.

[0111] For this reason, in some embodiments, as Figure 8 shown, the first region AA1 includes multiple first sub-regions AA11 arranged in an array, the second region AA2 includes multiple second sub-regions AA21 arranged in an array, and the positions of the multiple first sub-regions AA11 in the first region AA1 correspond one-to-one to the positions of the multiple second sub-regions AA21 in the second region AA2; each first sub-region AA11 and each second sub-region AA21 are respectively used to form a color filter 200 of a display panel.

[0112] In combination with Figure 8 and Figure 13 , as Figure 12 shown, the preparation method specifically includes S100a to S400a.

[0113] S100a: Prepare the first color photoresist 110 in each first sub-region AA11 with the first preset exposure amount.

[0114] S200a: Obtain the first actual size AD of the first color photoresist 110 in each first sub-region AA11 in the first preset direction X.

[0115] S300a: Determine the first corrected exposure amount of the second sub-region AA21 corresponding to each first sub-region AA11 according to the first actual size AD, the preset size, and the first preset exposure amount of the first color photoresist 110 in each first sub-region AA11.

[0116] S400a: Prepare the first color photoresist 110 in the corresponding second sub-region AA21 with the first corrected exposure amount for each second sub-region AA21.

[0117] Through the settings including S100a to S400a in the preparation method, first, the exposure amount corresponding to each color filter 200 of each display panel can be corrected, so that the sizes of the first color photoresists 110 in multiple second sub-regions AA21 of the second region AA2 of the substrate 210 are all relatively close to the preset size; second, it can be ensured that each different second sub-region AA21 is provided with a matching first corrected exposure amount, that is to say, the first corrected exposure amounts for different second sub-regions AA21 can be set differently. In this way, the influence of the central bending and sagging of the mask 400 on the size of the color photoresist can be compensated, so that the sizes of the first color photoresists 110 in multiple second sub-regions AA21 are all relatively close to the preset size, and the uniformity of the size of the first color photoresist 110 is improved.

[0118] In the embodiments of the present disclosure, there is no limitation on the direction of the first preset direction X, as long as the requirement of being parallel to the substrate 210 can be satisfied. For example, if the first color photoresist 110 is a rectangular photoresist, the first preset direction X can be the diagonal direction of the first color photoresist 110; at this time, the first actual size AD can be obtained by measuring the distance between two diagonal points of the first color photoresist 110.

[0119] In some embodiments, as Figure 13 shown, the first color photoresists 110 are arranged in an array, and the first preset direction X is the row direction Z1 or the column direction Z2 of the array arrangement of the first color photoresists 110.

[0120] For example, as Figure 13 shown, the first color photoresists 110 are arranged in an array, and the first preset direction X is the row direction Z1 of the array arrangement of the first color photoresists 110.

[0121] By setting like this, the distance between two boundaries of the first color photoresist 110 can be measured. For example, the distance between two boundaries of the first color photoresist 110 in the row direction Z1 can be measured to obtain the first actual size AD of the first color photoresist 110. In this way, compared with the case of measuring the distance between two points, the feasibility of measuring the first actual size AD can be improved, and the accuracy of the measured first actual size AD can be improved, so that the obtained first corrected exposure amount is closer to the required exposure amount, and the size of the first color photoresist 110 in the second region AA2 is closer to the preset size.

[0122] In some examples, the exposure mercury lamp 311 of the exposure machine 310 is arranged in multiple mercury lamp boxes 311G (cassette), and the mercury lamp box 311G includes multiple exposure mercury lamps 311 arranged in an array. For example, as Figure 14As shown, there are 20 exposure mercury lamps 311 arranged in an array within a mercury lamp box 311G.

[0123] By setting it in this way, the arrangement of the exposure mercury lamps 311 can be the same as the arrangement of the first sub-region AA11 in the first region AA1 and the arrangement of the second sub-region AA21 in the second region AA2. It can make a first sub-region AA11 face one or more exposure mercury lamps 311 (for example, two), and adjust the exposure amount of these exposure mercury lamps 311 to the first corrected exposure amount corresponding to the first sub-region AA11 for the preparation of the first color photoresist 110 in a second sub-region AA21.

[0124] In some embodiments, the first region AA1 includes 8×15 first sub-regions AA11 (see Figure 22 ). The exposure machine 310 includes 4×3 mercury lamp boxes 311G (see Figure 14 ), and each mercury lamp box 311G is provided with 5×4 exposure mercury lamps 311 arranged in an array. The numbers of the exposure mercury lamps 311 corresponding to the 8×15 first sub-regions AA11 are shown in Table 1.

[0125] In S100a, the first color photoresist 110 was prepared in the 8×15 first sub-regions AA11 with a first preset exposure amount of 40 mj.

[0126] In S200a, the first actual size AD of the first color photoresist 110 in the 8×15 first sub-regions AA11 obtained in the first preset direction X is shown in Table 2, and the data unit in the table is μm; wherein, the first preset direction X is the row direction Z1 of the array arrangement of the first color photoresist 110.

[0127] S300a includes S310a and S320a. In S310a, according to the first actual size AD of the 8×15 first sub-regions AA11, the differences between the first actual size AD of the 8×15 first sub-regions AA11 and the preset size of 41.5 μm are shown in Table 3, and the data unit in the table is μm; and according to the differences between the first actual size AD of the 8×15 first sub-regions AA11 and the preset size of 41.5 μm, and the preset corresponding relationship D = 0.1886×H + 34.15, the exposure amount compensation values of the 8×15 first sub-regions AA11 are determined. In S320a, according to the exposure amount compensation values of the 8×15 first sub-regions AA11 and the first preset exposure amount of 40 mj, the first corrected exposure amounts of the 8×15 first sub-regions AA11 are determined as shown in Table 4, and the data unit in the table is mj.

[0128] In S400a, the first color photoresist 110 was prepared in the corresponding second sub-regions AA21 with the first corrected exposure amounts of the 8×15 second sub-regions AA21.

[0129] Table 1

[0130]

[0131]

[0132] Table 2

[0133] 1 2 3 4 5 6 7 8 1 42.62 43.64 43.39 41.63 41.86 41.85 41.49 41.58 2 43.77 43.72 42.8 40.97 41.33 41.38 41.15 42.08 3 43.48 43.46 42.42 40.55 41.27 41.34 41.55 42.38 4 43.02 42.9 41.37 40.11 40.54 41.19 41.33 42.33 5 42.52 42.12 40.55 40.04 39.98 40.77 41.4 42.02 6 41.81 40.9 40.1 39.79 39.78 40.5 41.4 41.65 7 41.3 40.57 39.81 39.78 39.78 40.37 41.32 41.28 8 40.99 40.16 39.71 39.58 39.59 40.21 41.17 40.89 9 40.86 40.27 39.72 39.44 39.33 40.24 41.23 40.79 10 40.95 40.55 39.99 39.55 39.66 40.63 41.13 40.88 11 41.27 40.99 40.31 39.92 40.08 40.91 40.87 41.02 12 41.82 41.6 40.66 40.26 40.57 41.14 41.08 41.72 13 42.69 42.47 41.31 40.89 41.06 41.5 41.62 42.3 14 43.07 42.67 41.64 41.45 41.42 41.71 41.68 42.36 15 42.95 42.6 41.7 41.83 41.88 42.07 42.18 42.31

[0134] Table 3

[0135]

[0136]

[0137] Table 4

[0138] 1 2 3 4 5 6 7 8 1 34.1 28.7 30.0 39.3 38.1 38.1 40.1 39.6 2 28.0 28.2 33.1 42.8 40.9 40.6 41.9 36.9 3 29.5 29.6 35.1 45.0 41.2 40.8 39.7 35.3 4 31.9 32.6 40.7 47.4 45.1 41.6 40.9 35.6 5 34.6 36.7 45.0 47.7 48.1 43.9 40.5 37.2 6 38.4 43.2 47.4 49.1 49.1 45.3 40.5 39.2 7 41.1 44.9 49.0 49.1 49.1 46.0 41.0 41.2 8 42.7 47.1 49.5 50.2 50.1 46.8 41.7 43.2 9 43.4 46.5 49.4 50.9 51.5 46.7 41.4 43.8 10 42.9 45.0 48.0 50.3 49.8 44.6 42.0 43.3 11 41.2 42.7 46.3 48.4 47.5 43.1 43.3 42.5 12 38.3 39.5 44.5 46.6 44.9 41.9 42.2 38.8 13 33.7 34.9 41.0 43.2 42.3 40.0 39.4 35.8 14 31.7 33.8 39.3 40.3 40.4 38.9 39.0 35.4 15 32.3 34.2 38.9 38.3 38.0 37.0 36.4 35.7

[0139] Through the above preparation method, the first corrected exposure amounts of 8×15 second sub-regions AA21 can be obtained respectively, and by adjusting the exposure amounts of the exposure mercury lamps 311 corresponding to each second sub-region AA21 to the corresponding first corrected exposure amounts, the first color photoresists 110 of the 8×15 second sub-regions AA21 in the second region AA2 are all closer to the preset size. For example, if the first corrected exposure amount of the second sub-region AA21 located in the first row and the first column is 34.1 mj, the exposure amounts of the exposure mercury lamps 311 numbered a1 and a2 can be adjusted to 34.1 mj, so that the size of the first color photoresist 110 in the second sub-region AA21 located in the first row and the first column is close to the preset size.

[0140] In some embodiments, in combination with Figure 8 and Figure 13 , the preparation method further includes S500 to S700.

[0141] S500: Obtain the second actual size of the first color photoresist 110 in the second region AA2 in the first preset direction X.

[0142] S600: Determine the second corrected exposure amount according to the second actual size, the preset size, and the first corrected exposure amount.

[0143] S700: Prepare the first color photoresist 110 in the third region of the substrate 210 with the second corrected exposure amount.

[0144] It should be noted that the "first", "second", and "third" in the first region AA1, the second region AA2, and the third region are relative concepts and are only used for descriptive purposes to make the preparation order of the three successively prepared regions clearer. In practical applications, the first region AA1, the second region AA2, and the third region can be any three regions in the substrate 210. Moreover, depending on the different preparation orders of the other described regions, a certain region may be the first region AA1, may also be the second region AA2, or may be the third region.

[0145] With the above settings, on the one hand, the second corrected exposure amount closer to the required exposure amount can be obtained by using the second actual size, the preset size, and the first corrected exposure amount. In this way, the size of the first color photoresist 110 in the third region prepared using the second corrected exposure amount can be closer to the preset size, and the difference between the size of the color photoresist and the preset size can be reduced. On the other hand, when the preparation method further includes S500 - S700, in the exposure process, the correction process of the exposure amount is carried out cyclically, realizing the continuous correction of the exposure amount during the exposure process. In this way, the sizes of the first color photoresists 110 formed in each exposure process can be closer to the preset size, and the process accuracy of the exposure process can be improved.

[0146] As described above, as Figure 2 shown, during the process of the exposure machine 310 preparing the color photoresist, it is necessary to use the mask 400 to achieve it. Usually, a registration structure is used to position the mask 400 so that the positions of the openings Q on the mask 400 match the set positions of the color photoresist, that is, the mask 400 is located at the set position.

[0147] In some implementation manners, as Figure 21 shown, there is likely to be a certain deviation between the actual position K1 and the set position KC of the mask 400, which makes the position of the formed color photoresist prone to deviate from the preset position and easily affects the display quality of the display panel. For example, during the display process of the display panel, problems such as light leakage, color mixing, and color overlapping are likely to occur.

[0148] In some embodiments, in combination with Figure 8 and Figure 15 , as Figure 16 shown, the preparation method further includes R100 - R400.

[0149] R100: Prepare the black matrix layer 220 in the first region AA1 of the substrate 210; the black matrix layer 220 includes a plurality of black matrix bars 221, and the plurality of black matrix bars 221 intersect to define a plurality of openings Q. One first color photoresist 110 is disposed in one opening Q, and the black matrix bars 221 surrounding one opening Q form a black matrix frame 222.

[0150] Here, for the understanding of the black matrix layer 220, the black matrix bars 221, the black matrix frames 222, and the opening Q, reference may be made to the description of the black matrix layer 220, the black matrix bars 221, the black matrix frames 222, and the opening Q in the foregoing part.

[0151] Exemplarily, R100 may be performed before S100.

[0152] R200: Obtain the distance L between the boundary of the first color photoresist 110 in the first region AA1 and the outer boundary of the corresponding black matrix frame 222 where it is located.

[0153] The embodiments of the present disclosure do not limit the manner of obtaining the above distance L. For example, as a possible obtaining manner, relevant optical devices may be used to measure the above distance L.

[0154] R300: Determine a position correction parameter according to the distance L and a reference distance; the position correction parameter includes a correction direction Y and a position correction value along the correction direction.

[0155] Exemplarily, R200 and R300 may be performed after S100 and before S400. For example, R200 and R300 may be performed after S100 and before S200; alternatively, R200 and R300 may be performed after S200 and before S300; alternatively, R200 and R300 may be performed after S300 and before S400.

[0156] R400: Adjust the position of the mask 400 according to the position correction parameter, and use the mask 400 to prepare the first color photoresist 110 in the second region AA2 of the substrate 210.

[0157] Understandably, when the actual position of the first-color photoresist 110 in the first region AA1 formed in S100 is closer to the preset position of the first-color photoresist 110, the pitch L is closer to the reference pitch. By obtaining the pitch L in R200 and comparing the pitch L with the reference pitch in R300, the relative position relationship and distance between the actual position and the preset position of the first-color photoresist 110 in the first region AA1 can be obtained. In this way, according to the relative position relationship between the actual position and the preset position, the correction direction can be determined. According to the distance between the actual position and the preset position, the position correction value along the correction direction can be determined, and then the position correction parameter can be determined. Thus, in R400, the position of the mask 400 can be adjusted according to the position correction parameter, so that the position of the mask 400 is closer to or located at the set position. In this way, the position of the first-color photoresist 110 in the second region AA2 prepared using the mask 400 can be closer to the preset position of the first-color photoresist 110, so as to avoid affecting the display quality of the display panel and improve the display quality of the display panel.

[0158] The embodiment of the present disclosure does not limit the direction of the above correction direction. In some embodiments, the correction direction includes the row direction Z1 in which a plurality of first-color photoresists 110 are arranged in an array, and / or the column direction Z2 in which a plurality of first-color photoresists 110 are arranged in an array. The following will give examples.

[0159] In some embodiments, in combination with Figure 15 , the boundary of the first-color photoresist 110 includes two first boundaries 110a opposite to each other in the first direction, and the first direction Z1 is the row direction Z1 in which a plurality of first-color photoresists 110 are arranged in an array; the outer boundary of the black matrix frame 222 includes two third boundaries 222a opposite to each other in the first direction. The pitch L includes a first pitch L1 between each first boundary 110a and the adjacent third boundary 222a, and the position correction parameter includes a first correction direction and a first position correction value.

[0160] Determining the position correction parameter (i.e., R300) according to the pitch L and the reference pitch includes R310 to R320.

[0161] R310: Determine the first correction direction according to the magnitude relationship between the first pitch L1 and the reference pitch; the first correction direction includes moving left or right along the first direction Z1.

[0162] R320: Determine the first position correction value according to the difference between the first pitch L1 and the reference pitch.

[0163] In R400, adjusting the position of the mask 400 according to the position correction parameter includes R410.

[0164] R410: Adjust the position of the mask 400 along the first correction direction according to the first position correction value.

[0165] Exemplarily, the reference spacing is xc. In R200, combined with Figure 15 , the first spacing L1 located on the right side of the first color photoresist 110 is obtained, and its value is x1, and x1 is greater than xc, indicating that the first color photoresist 110 is prone to color bleeding with the color photoresist located on its left side. R310: Determine that the first correction direction is to the right along the first direction Z1 according to the magnitude relationship between the first spacing x1 and the reference spacing xc. R320: Determine the first position correction value (x1 - xc) according to the difference (x1 - xc) between the first spacing L1 and the reference spacing. R410: Translate the mask 400 to the right by (xc - x1) along the first direction Z1.

[0166] Also exemplarily, the reference spacing is xc. In R200, combined with Figure 15 , the first spacing L1 located on the left side of the first color photoresist 110 is obtained, and its value is x2, and x2 is less than xc, indicating that the first color photoresist 110 is prone to color bleeding with the color photoresist located on its left side. R310: Determine that the first correction direction is to the right along the first direction Z1 according to the magnitude relationship between the first spacing x2 and the reference spacing xc. R320: Determine the first position correction value (xc - x2) according to the difference (x2 - xc) between the first spacing L1 and the reference spacing. R410: Translate the mask 400 to the right by (xc - x2) along the first direction Z1.

[0167] It should be understood that in practical applications, the first spacings L1 located on the left and right sides of the first color photoresist 110 can be obtained respectively. In this way, two first position correction values can be obtained respectively, and the average value of the two first position correction values can be taken to obtain the first position correction value referred to in R410.

[0168] Moreover, when the first spacing L1 on one side of the first color photoresist 110 cannot be obtained, it indicates that the offset of the first color photoresist 110 to this side is relatively large, exceeding the boundary of the black matrix frame 222. At this time, the first color photoresist 110 is prone to overlap with the color photoresist located on this side, resulting in color mixing. In this case, the first spacing L1 on the other side of the first color photoresist 110 can be measured to obtain the first position correction value.

[0169] Through the above settings, the position of the mask 400 in the first direction can be corrected, so that when preparing the first color photoresist 110 in the second region AA2 of the substrate 210, the position of the mask 400 in the first direction Z1 is closer to the preset position. In this way, the position of the first color photoresist 110 in the second region AA2 prepared by using the mask 400 in the first direction Z1 can be closer to the preset position of the first color photoresist 110.

[0170] In some embodiments, in combination with Figure 15 , the boundary of the first color photoresist 110 includes two second boundaries 110b opposite to each other in the second direction Z2, and the second direction Z2 is the column direction Z2 in which a plurality of first color photoresists 110 are arranged in an array; the outer boundary of the black matrix frame 222 includes two fourth boundaries 222b opposite to each other in the second direction Z2. The spacing L includes a second spacing L2 between each second boundary 110b and the adjacent fourth boundary 222b, and the position correction parameter includes a second correction direction and a second position correction value.

[0171] According to the spacing L and the reference spacing, the position correction parameter (i.e., R300) is determined, including R330 to R340.

[0172] R330: According to the magnitude relationship between the second spacing L2 and the reference spacing, the second correction direction is determined; the second correction direction includes upward or downward along the second direction Z2.

[0173] R340: According to the difference between the second spacing L2 and the reference spacing, the second position correction value is determined.

[0174] In R400, according to the position correction parameter, the position of the mask 400 is adjusted, including R420.

[0175] R420: According to the second position correction value, the position of the mask 400 is adjusted along the second correction direction.

[0176] Exemplarily, the reference spacing is xc. In R200, in combination with Figure 15 , the second spacing L2 located above the first color photoresist 110 is obtained, and its value is x3, and x3 is less than xc. R330: According to the magnitude relationship between the second spacing x3 and the reference spacing xc, the second correction direction is determined to be downward along the second direction Z2. R340: According to the difference between the second spacing L2 and the reference spacing (x3 - xc), the second position correction value (xc - x3) is determined. R420: Along the second direction Z2, the mask 400 is translated downward by (xc - x3).

[0177] Another example, the reference spacing is xc. In R200, in combination with Figure 15, the second spacing L2 located below the first color photoresist 110 is obtained, and its value is x4, and x4 is less than xc. R330: According to the magnitude relationship between the second spacing x4 and the reference spacing xc, it is determined that the second correction direction is upward along the second direction Z2. R340: According to the difference (x4 - xc) between the second spacing L2 and the reference spacing, the second position correction value (xc - x4) is determined. R410: Along the second direction Z2, the mask 400 is translated upward by (xc - x4).

[0178] It should be understood that in practical applications, the second spacing L2 located above and below the first color photoresist 110 can be obtained respectively. In this way, two second position correction values can be obtained respectively, and the average value of the two second position correction values is taken to obtain the second position correction value referred to in R420.

[0179] Similarly to the previous part, when the second spacing L2 on one side of the first color photoresist 110 cannot be obtained, it indicates that the offset of the first color photoresist 110 to this side is relatively large, exceeding the boundary of the black matrix frame 222. At this time, the first color photoresist 110 is likely to overlap with the color photoresist on this side, resulting in color mixing. In this case, the second spacing L2 on one side of the first color photoresist 110 can be measured to obtain the first position correction value.

[0180] Through the above settings, the position of the mask 400 in the second direction Z2 can be corrected, so that when the first color photoresist 110 is prepared in the second region AA2 of the substrate 210, the position of the mask 400 in the second direction Z2 is closer to the preset position. In this way, the position of the first color photoresist 110 in the second region AA2 prepared by using the mask 400 in the second direction Z2 can be closer to the preset position of the second color photoresist 120.

[0181] The present disclosure does not limit the value of the above reference spacing. Exemplarily, the width m of the black matrix bar 221 can be referred to for setting the reference spacing.

[0182] In some implementation manners, the opening Q defined by the black matrix bar 221 is as Figure 17 shown. In order to make the edge of the formed color photoresist cover the opening Q and to improve the process feasibility, as Figure 18 shown, the size of the color photoresist is larger than the size of the opening Q, so that the color photoresist covers a part of the black matrix bar 221. For example, the color photoresist covers half of the black matrix bar 221, that is, the difference between the size of the color photoresist and the size of the opening Q is 1 / 2 of the width of the black matrix bar 221; in this way, as Figure 19As shown, the formed blue photoresist 101, red photoresist 102, and green photoresist 103 can completely cover the black matrix bars 221. In some cases, the color photoresist covers a relatively large range of the black matrix bars 221. For example, as Figure 20 shown, the blue photoresist 101 covers a relatively large range of the black matrix bars 221, making it easy for color mixing to occur in the area between the blue photoresist 101 and the green photoresist 103, and showing mura macroscopically.

[0183] In some embodiments, in combination with Figure 15 , the value range of the reference spacing is 1 / 3 to 2 / 3 of the width m of the black matrix bar 221.

[0184] Exemplarily, the value range of the reference spacing is 1 / 3, 5 / 12, 1 / 2, 7 / 12, or 2 / 3 of the width of the black matrix bar 221, etc.

[0185] In the case where the reference spacing is small, it is easy for the position correction value to be too large, which may cause the position of the mask 400 to still deviate from the set position; in the case where the reference spacing is large, it is easy for the position correction value to be too small, which may also cause the position of the mask 400 to still deviate from the set position; therefore, through the above settings, when the reference spacing is within a suitable range, the effect of position correction of the mask 400 can be improved, making the mask 400 closer to the set position. Moreover, through the setting that the value range of the reference spacing is 1 / 3 to 2 / 3 of the width of the black matrix bar 221, the process feasibility of preparing the color photoresist can be improved, and different color photoresists can better cover the black matrix bar 221 with less overlap or basically no overlap, which can avoid display defects such as color mixing and color overlapping.

[0186] In some implementation manners, as Figure 21 shown, between the actual position K1 and the set position KC of the mask 400, in addition to the deviation along the first direction Z1 and the second direction Z2, there is also a certain tilt offset, which is manifested as the position of the mask 400 rotating a certain angle based on the set position.

[0187] For this reason, in some embodiments, in combination with Figure 22 and Figure 24 , as Figure 23 shown, the preparation method further includes U100 to U400.

[0188] U100: Obtain the second spacing L2 corresponding to the first target photoresist 111 and the second target photoresist 112 respectively; the first target photoresist 111 and the second target photoresist 112 are two first color photoresists 110 arranged along the first direction Z1 in the first region AA1.

[0189] U200: Determine the first offset θ1 of the first color photoresist 110 in the first region AA1 according to the second pitch L2 corresponding to the first target photoresist 111 and the second target photoresist 112 respectively, and the distance value between the first target photoresist 111 and the second target photoresist 112 in the first direction Z1; the first offset θ1 is the angle between the second boundary 110b of the first color photoresist 110 and the first direction Z1.

[0190] U300: Determine the first offset correction parameter according to the first offset θ1; the first offset correction parameter includes the rotation direction of the mask 400 and the rotation angle along the rotation direction.

[0191] Exemplarily, U100-U300 can be performed after S100 and before S400. For example, U100-U300 can be performed after S100 and before S200; alternatively, U100-U300 can be performed after S200 and before S300; alternatively, U100-U300 can be performed after S300 and before S400.

[0192] U400: Adjust the position of the mask 400 according to the first offset correction parameter, and use the mask 400 to prepare the first color photoresist 110 in the second region AA2 of the substrate 210.

[0193] Exemplarily, as Figure 22 and Figure 24 shown, in U200, the process of determining the first offset θ1 can be as follows: the second pitch L2 corresponding to the first target photoresist 111 is L21, the second pitch L2 corresponding to the second target photoresist 112 is L22, and L22 is greater than L21. Then, according to the second pitch L2 corresponding to the first target photoresist 111 and the second target photoresist 112 respectively, the difference (L22 - L21) between the second pitch L21 corresponding to the first target photoresist 111 and the second pitch L22 corresponding to the second target photoresist 112 can be obtained. Then, divide (L22 - L21) by the distance value LL1 between the first target photoresist 111 and the second target photoresist 112 in the first direction Z1, that is, (L22 - L21) / LL1, to obtain the tangent value of the first offset θ1. Moreover, perform an arctangent calculation on (L22 - L21) / LL1 to obtain the first offset θ1.

[0194] At this time, in U300, the process of determining the first offset correction parameter according to the first offset θ1 can be as follows: the rotation direction of the mask 400 is to rotate in the clockwise direction; the rotation angle of the mask 400 along the rotation direction (clockwise direction) is θ1.

[0195] It should be understood that the embodiments of the present disclosure do not limit the positions of the first target photoresist 111 and the second target photoresist 112, as long as the requirements that the first target photoresist 111 and the second target photoresist 112 are arranged along the first direction Z1 are satisfied.

[0196] In some examples, as Figure 22 shown, the first target photoresist 111 and the second target photoresist 112 are located at two upper corner portions of the first region AA1. At this time, in U100, the second pitch L2 corresponding to each of the third target photoresist 113 and the fourth target photoresist 114, which are located at two lower corner portions of the first region AA1 and arranged along the first direction Z1, can also be measured; and according to the distance values of the third target photoresist 113 and the fourth target photoresist 114 in the first direction Z1, a third offset θ3 is obtained; in U300, a third offset correction parameter is further determined according to the third offset, and the third offset correction parameter includes the rotation direction of the mask 400 and the rotation angle along the rotation direction. In this case, the rotation angle of the mask 400 included in the first offset correction parameter can be averaged with the rotation angle of the mask 400 included in the third offset correction parameter to guide the adjustment of the position of the mask 400 in U400.

[0197] Through the above settings, the situation of the tilt offset between the actual position K1 and the set position KC of the mask 400 can be obtained, and when the actual position K1 of the mask 400 is adjusted to the set position KC, the rotation direction and the rotation angle (i.e., the first offset correction parameter) required can be obtained. In this way, the tilt offset between the actual position K1 and the set position KC of the mask 400 can be corrected, so that the position of the mask 400 is closer to or located at the set position. In this way, the position of the first color photoresist 110 in the second region AA2 prepared by using the mask 400 can be closer to the preset position of the first color photoresist 110, so as to avoid affecting the display quality of the display panel and improve the display quality of the display panel.

[0198] In some embodiments, in combination with Figure 22 and Figure 24 , as Figure 25 shown, the preparation method further includes U100’ to U400’.

[0199] U100’: Obtain the first pitch L1 corresponding to each of the first target photoresist 111 and the third target photoresist 113; the first target photoresist 111 and the third target photoresist 113 are two first color photoresists 110 arranged along the second direction Z2 in the first region AA1.

[0200] U200’: Determine a second offset θ2 of the first color photoresist 110 in the first region AA1 according to the first pitch L1 corresponding to the first target photoresist 111 and the third target photoresist 113 respectively, and the distance value between the first target photoresist 111 and the third target photoresist 113 in the second direction Z2; the second offset θ2 is the angle between the first boundary 110a of the first color photoresist 110 and the second direction Z2.

[0201] U300’: Determine a second offset correction parameter according to the second offset θ2; the second offset correction parameter includes the rotation direction of the mask 400 and the rotation angle along the rotation direction.

[0202] Exemplarily, U100’ to U300’ can be performed after S100 and before S400. For example, U100’ to U300’ can be performed after S100 and before S200; alternatively, U100’ to U300’ can be performed after S200 and before S300; alternatively, U100’ to U300’ can be performed after S300 and before S400.

[0203] U400’: Adjust the position of the mask 400 according to the second offset correction parameter, and use the mask 400 to prepare the first color photoresist 110 in the second region AA2 of the substrate 210.

[0204] Exemplarily, as Figure 22 and Figure 24 shown, in U200’, the process of determining the second offset θ2 can be as follows: the first pitch L1 corresponding to the first target photoresist 111 is L11, the first pitch L1 corresponding to the third target photoresist 113 is L13, and L11 is greater than L13. Then, according to the first pitch L1 corresponding to the first target photoresist 111 and the third target photoresist 113 respectively, the difference (L11 - L13) between the first pitch L11 corresponding to the first target photoresist 111 and the first pitch L13 corresponding to the third target photoresist 113 can be obtained. Then, divide (L11 - L13) by the distance value LL2 between the first target photoresist 111 and the second target photoresist 112 in the second direction Z2, that is, (L11 - L13) / LL2, to obtain the tangent value of the second offset θ2. Moreover, perform an arctangent calculation on (L11 - L13) / LL2 to obtain the second offset θ2.

[0205] At this time, in U300’, the process of determining the second offset correction parameter according to the second offset θ2 can be as follows: the rotation direction of the mask 400 is to rotate in the clockwise direction; the rotation angle of the mask 400 along the rotation direction (clockwise direction) is θ2.

[0206] It should be understood that the embodiments of the present disclosure do not limit the positions of the first target photoresist 111 and the third target photoresist 113, as long as the requirements that the first target photoresist 111 and the third target photoresist 113 are arranged along the first direction Z1 are satisfied.

[0207] In some examples, the first target photoresist 111 and the third target photoresist 113 are located at two corner portions on the left side of the first region AA1. At this time, in U100’, it is also possible to measure the respective first pitches L1 of the second target photoresist 112 and the fourth target photoresist 114 that are located at two corner portions on the right side of the first region AA1 and are arranged along the second direction Z2; and obtain a fourth offset θ4 according to the distance value between the second target photoresist 112 and the fourth target photoresist 114 in the second direction Z2; in U300’, a fourth offset correction parameter is further determined according to the fourth offset θ4, and the fourth offset correction parameter includes the rotation direction of the mask 400 and the rotation angle along the rotation direction. In this case, the rotation angle of the mask 400 included in the second offset correction parameter can be averaged with the rotation angle of the mask 400 included in the fourth offset correction parameter to guide the adjustment of the position of the mask 400 in U400’.

[0208] In some examples, as Figure 24 shown, the first offset θ1, the second offset θ2, the third offset θ3, and the fourth offset θ4 are respectively obtained. At this time, the first offset θ1, the second offset θ2, the third offset θ3, and the fourth offset θ4 can be averaged to obtain the rotation angle of the mask 400 in U400 and U400’.

[0209] Through the above settings, the situation of the tilt offset between the actual position K1 and the set position KC of the mask 400 can be obtained, and when the actual position K1 of the mask 400 is adjusted to the set position KC, the rotation direction and the rotation angle (i.e., the second offset correction parameter) are obtained. In this way, the tilt offset between the actual position K1 and the set position KC of the mask 400 can be corrected, so that the position of the mask 400 is closer to or located at the set position. In this way, the position of the first color photoresist 110 in the second region AA2 prepared by using the mask 400 can be closer to the preset position of the first color photoresist 110, so as to avoid affecting the display quality of the display panel and improve the display quality of the display panel.

[0210] In some implementation manners, as Figure 19 shown, the blue photoresist 101, the red photoresist 102, and the green photoresist 103 cover the black matrix stripes 221. At this time, after S100, it is difficult to obtain the numerical values of the first pitch L1 and the second pitch L2.

[0211] In some embodiments, asFigure 15 and Figure 22 As shown in Figure 22 , the first region AA1 includes a plurality of first sub-regions AA11 arranged in an array, and a test region BB located outside the plurality of first sub-regions AA11. The test region BB is provided with a plurality of first color photoresists 110. The distance L between the boundary of the first color photoresist 110 in the first region AA1 and the outer boundary of the black matrix frame 222 where it is located is obtained based on the first color photoresist 110 in the test region BB.

[0212] Exemplarily, the black matrix bars 221 on both sides of the first color photoresist 110 in the test region BB in the first direction Z1, and the black matrix bars 221 on both sides of the first color photoresist 110 in the test region BB in the first direction Z1 are not covered by the first color photoresist 110 or other color photoresists.

[0213] Exemplarily, as shown in Figure 15 Figure 22 As shown in Figure 22 , the color photoresists in the test region BB further include a second color photoresist 120 and a third color photoresist 130, and any two of the first color photoresist 110, the second color photoresist 120, and the third color photoresist 130 have different colors. At this time, the second color photoresist 120 can be arranged along the diagonal direction of the array of the first color photoresist 110. In this way, any two adjacent color photoresists among the first color photoresist 110, the second color photoresist 120, and the third color photoresist 130 can be staggered in both the first direction Z1 and the second direction Z2.

[0214] Through the above settings, the difficulty of obtaining the first distance L1 and the second distance L2 can be reduced, the values of the obtained first distance L1 and the second distance L2 can be more accurate, which is beneficial to improving the effect of the position correction of the mask 400, and can make the position of the first color photoresist 110 in the second region AA2 prepared by using the mask 400 closer to the preset position of the first color photoresist 110.

[0215] An embodiment of the present disclosure also provides an exposure device 300. Combining Figure 2 , as Figure 26 shown in Figure 26 , the exposure device 300 includes: a reaction chamber CC, an exposure machine 310, and a controller 320. The reaction chamber CC is used to accommodate the color filter 200 to be prepared (refer to Figure 1). The exposure machine 310 is used to expose the film layer formed on the color filter 200. The controller 320 is used to execute one or more steps of the preparation method of the color filter 200 described in any of the above embodiments.

[0216] Exemplarily, when the controller 320 is used to execute one or more steps of the method for preparing the color filter 200 described in any of the above embodiments, the exposure device 300 may have an auto feed back function.

[0217] Exemplarily, the controller 320 may be configured to control the exposure amount of the exposure mercury lamp 311 of the exposure machine 310.

[0218] Also exemplarily, the controller 320 may be configured to control the moving mechanism of the exposure machine 310, so that the mask 400 connected to the exposure machine 310 can move or rotate according to one or more of the above position correction parameters, the above first offset correction parameter, and the above second offset correction parameter.

[0219] The above exposure device 300 has the same beneficial technical effects as the method for preparing the color filter 200 provided in some of the above embodiments, and will not be described in detail here.

[0220] Embodiments of the present disclosure also provide an electronic device 500. As Figure 27 shown, the electronic device 500 includes: a processor 510 and a memory 520 for storing executable instructions of the processor 510. The processor 510 is configured to execute instructions to implement one or more steps of the method for preparing the color filter 200 (which can be referred to FIG. 1) described in any of the above embodiments.

[0221] Exemplarily, the processor 510 may include one or more processing cores, such as a 4-core processor, an 8-core processor, etc. The processor 510 may include an application processor (AP), a modulation and demodulation processor, a graphics processing unit (GPU), an image signal processor (ISP), a central processing unit (CPU), a controller 320, a memory, a video codec, a digital signal processor (DSP), a baseband processor, and / or a neural-network processing unit (NPU), etc. Among them, different processing units may be independent devices or integrated in one or more processors.

[0222] Exemplarily, the memory 520 may be a read-only memory (ROM) or other type of static storage device that can store static information and instructions, a random access memory (RAM) or other type of dynamic storage device that can store information and instructions, or may be an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compact discs, laser discs, optical discs, digital versatile discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto. The memory 520 may exist independently and be connected to the processor 510 through a bus. The memory 520 may also be integrated with the processor 510.

[0223] Exemplarily, the instructions executed by the processor 510 may include: instructions output to the control terminal of the exposure mercury lamp 311 of the exposure machine 310 (refer to Figure 2 ).

[0224] Again exemplarily, the instructions executed by the processor 510 may include: instructions output to the control terminal of the moving mechanism of the exposure machine 310.

[0225] The above electronic device 500 has the same beneficial technical effects as the preparation method of the color filter 200 provided in some of the above embodiments, and will not be elaborated here.

[0226] Embodiments of the present disclosure also provide a non-transitory computer-readable storage medium. Instructions are stored on the non-transitory computer-readable storage medium; wherein, when the instructions in the non-transitory computer-readable storage medium are executed by the processor of the electronic device, the electronic device can execute one or more steps of the preparation method of the color filter 200 (refer to FIG. 1) as described in any of the above embodiments.

[0227] Exemplarily, the instructions stored on the non-transitory computer-readable storage medium may include: instructions output to the control terminal of the exposure mercury lamp 311 of the exposure machine 310 (refer to Figure 2 ).

[0228] Again exemplarily, the instructions stored on the non-transitory computer-readable storage medium may include: instructions output to the control terminal of the moving mechanism of the exposure machine 310.

[0229] The above non-transitory computer-readable storage medium has the same beneficial technical effects as the preparation method of the color filter 200 provided in some of the above embodiments, which will not be elaborated here.

[0230] Embodiments of the present disclosure also provide a computer program product. The computer program product includes computer instructions, wherein when the computer instructions are executed by a processor of an electronic device, one or more steps of the preparation method of the color filter 200 as described in any of the above embodiments (referable to FIG. 1) are implemented.

[0231] Exemplarily, the computer instructions may include: instructions output to the control end of the exposure mercury lamp 311 of the exposure machine 310 (referable to Figure 2 )).

[0232] Another exemplarily, the computer instructions may include: instructions output to the control end of the moving mechanism of the exposure machine 310.

[0233] The above computer program product has the same beneficial technical effects as the preparation method of the color filter 200 provided in some of the above embodiments, which will not be elaborated here.

[0234] The above is only the specific implementation manner of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure, thinking of changes or substitutions, should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A method for preparing a color filter, characterized in that, Including: Preparing a first-color photoresist in a first region of a substrate with a first preset exposure amount; The first preset exposure amount is determined according to a preset size of the first-color photoresist in a first preset direction, and the first preset direction is any direction parallel to the substrate; Obtaining a first actual size of the first-color photoresist in the first region in the first preset direction;; Determining a first corrected exposure amount according to the first actual size, the preset size, and the first preset exposure amount; Preparing a first-color photoresist in a second region of the substrate with the first corrected exposure amount.

2. The method for preparing a color filter according to claim 1, wherein The determining of the first corrected exposure amount according to the first actual size, the preset size, and the first preset exposure amount includes: Determining an exposure amount compensation value according to a difference between the first actual size and the preset size and a preset corresponding relationship; the preset corresponding relationship is the corresponding relationship between the exposure amount and the size of the first-color photoresist in the first preset direction; Determining the first corrected exposure amount according to the exposure amount compensation value and the first preset exposure amount..

3. The method for preparing a color filter according to claim 1, wherein The first region includes a plurality of first sub-regions arranged in an array, the second region includes a plurality of second sub-regions arranged in an array, the positions of the plurality of first sub-regions in the first region and the positions of the plurality of second sub-regions in the second region correspond one by one; each of the first sub-regions and each of the second sub-regions are respectively used to form a color filter of a display panel; The preparation method specifically includes: Preparing a first-color photoresist in each of the first sub-regions with the first preset exposure amount; Obtaining a first actual size of the first-color photoresist in each of the first sub-regions in the first preset direction; Determining a first corrected exposure amount of the second sub-region corresponding to each of the first sub-regions according to the first actual size, the preset size, and the first preset exposure amount of the first-color photoresist in each of the first sub-regions; Preparing a first-color photoresist in the corresponding second sub-region with the first corrected exposure amount of each of the second sub-regions.

4. The method for preparing a color filter according to claim 1, wherein, The preparation method further includes: Obtaining a second actual size of the first-color photoresist in the second region in the first preset direction;; Determining a second corrected exposure amount according to the second actual size, the preset size, and the first corrected exposure amount; Preparing a first-color photoresist in a third region of the substrate with the second corrected exposure amount.

5. The method for preparing a color filter according to any one of claims 1 to 4, characterized in that, The preparation method further includes: Preparing a black matrix layer in the first region of the substrate; the black matrix layer includes a plurality of black matrix bars, the plurality of black matrix bars intersect to define a plurality of openings, one first-color photoresist is disposed in one opening, and the black matrix bars surrounding one opening form a black matrix frame; Obtaining a distance between a boundary of the first-color photoresist in the first region and an outer boundary of the black matrix frame where it is located; Determining a position correction parameter according to the distance and a reference distance; the position correction parameter includes a correction direction and a position correction value along the correction direction; Adjusting the position of the mask according to the position correction parameter, and using the mask to prepare a first-color photoresist in the second region of the substrate.

6. The method for preparing a color filter according to claim 5, wherein The boundary of the first color photoresist includes two first boundaries opposite to each other in a first direction, and the first direction is the row direction in which a plurality of first color photoresist arrays are arranged; the outer boundary of the black matrix frame includes two third boundaries opposite to each other in the first direction; The spacing includes a first spacing between each of the first boundaries and the third boundary adjacent thereto, and the position correction parameter includes a first correction direction and a first position correction value; Determining the position correction parameter according to the spacing and the reference spacing includes: Determining the first correction direction according to the magnitude relationship between the first spacing and the reference spacing; the first correction direction includes left or right along the first direction; Determining the first position correction value according to the difference between the first spacing and the reference spacing; Adjusting the position of the mask according to the position correction parameter includes: Adjusting the position of the mask along the first correction direction according to the first position correction value.

7. The method for preparing a color filter according to claim 6, wherein, The boundary of the first color photoresist includes two second boundaries opposite to each other in a second direction, and the second direction is the column direction in which a plurality of first color photoresist arrays are arranged; the outer boundary of the black matrix frame includes two fourth boundaries opposite to each other in the second direction; The spacing includes a second spacing between each of the second boundaries and the fourth boundary adjacent thereto, and the position correction parameter includes a second correction direction and a second position correction value; Determining the position correction parameter according to the spacing and the reference spacing includes: Determining the second correction direction according to the magnitude relationship between the second spacing and the reference spacing; the second correction direction includes up or down along the second direction; Determining the second position correction value according to the difference between the second spacing and the reference spacing; Adjusting the position of the mask according to the position correction parameter includes: Adjusting the position of the mask along the second correction direction according to the second position correction value.

8. The method for preparing a color filter according to claim 6, wherein The preparation method further includes: Obtaining the second spacing corresponding to each of the first target photoresist and the second target photoresist; the first target photoresist and the second target photoresist are two first color photoresists arranged along the first direction in the first region; Determining a first offset of the first color photoresist in the first region according to the second spacing corresponding to each of the first target photoresist and the second target photoresist, and the distance value between the first target photoresist and the second target photoresist in the first direction; the first offset is the angle between the second boundary of the first color photoresist and the first direction; Determining a first offset correction parameter according to the first offset; the first offset correction parameter includes the rotation direction of the mask and the rotation angle along the rotation direction; Adjusting the position of the mask according to the first offset correction parameter, and using the mask to prepare the first color photoresist in the second region of the substrate.

9. The method for preparing a color filter according to claim 6, wherein The preparation method further includes: Obtaining the first spacing corresponding to each of the first target photoresist and the third target photoresist; the first target photoresist and the third target photoresist are two first color photoresists arranged along the second direction in the first region; Determine a second offset of the first color photoresist in the first region according to the first spacing corresponding to the first target photoresist and the third target photoresist respectively, and the distance value of the first target photoresist and the third target photoresist in the second direction; the second offset is the angle between the first boundary of the first color photoresist and the second direction. Determine a second offset correction parameter according to the second offset; the second offset correction parameter includes the rotation direction of the mask and the rotation angle along the rotation direction. Adjust the position of the mask according to the second offset correction parameter, and use the mask to prepare the first color photoresist in the second region of the substrate.

10. An exposure apparatus, characterized in that, Comprising: A reaction chamber for accommodating the color filter to be prepared. An exposure machine for exposing the film layer formed on the color filter. A controller for executing one or more steps of the method for preparing a color filter according to any one of claims 1 to 9.

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