Display device

Abstract

The invention provides a display device. The display device comprises a thin film transistor substrate, an opposite-side substrate, a display medium, a data line pattern, a shading layer and a color resistance layer. The opposite side substrate is correspondingly arranged on the thin film transistor substrate. The display medium is sandwiched between the thin film transistor substrate and the opposite substrate. The data line pattern is disposed on the thin film transistor substrate. The shading layer is arranged on the data line pattern and comprises a first metal layer and a second metal layer. The color resistance layer is arranged between the data line pattern and the shading layer. The second metal layer is arranged on the first metal layer, and the thickness of the second metal layer is larger than that of the first metal layer. The display device provided by the invention can have a relatively good display effect.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] In a display device with a high pixel density, when a user views the display device at an oblique viewing angle, it is easy to perceive a color-mixed display image, resulting in a poor display quality perceived by the user. Summary of the Invention

[0003] Some embodiments of the present disclosure are directed to a display device having a relatively good display effect.

[0004] The display device provided according to some embodiments of the present disclosure includes a thin film transistor substrate, a counter substrate, a display medium, a data line pattern, a light-shielding layer, and a color resist layer. The counter substrate is correspondingly disposed on the thin film transistor substrate. The display medium is sandwiched between the thin film transistor substrate and the counter substrate. The data line pattern is disposed on the thin film transistor substrate. The light-shielding layer is disposed on the data line pattern and includes a first metal layer and a second metal layer. The color resist layer is disposed between the data line pattern and the light-shielding layer. The second metal layer is disposed on the first metal layer, and the thickness of the second metal layer is greater than the thickness of the first metal layer.

[0005] The display device provided according to other embodiments of the present disclosure includes a thin film transistor substrate, a counter substrate, a display medium, a data line pattern, a light-shielding layer, and a color resist layer. The counter substrate is correspondingly disposed on the thin film transistor substrate. The display medium is sandwiched between the thin film transistor substrate and the counter substrate. The data line pattern is disposed on the thin film transistor substrate. The light-shielding layer is disposed on the data line pattern and includes a first metal layer and a second metal layer. The color resist layer is disposed on the light-shielding layer, wherein the light-shielding layer is disposed between the data line pattern and the color resist layer. The second metal layer is disposed on the first metal layer, and the thickness of the second metal layer is greater than the thickness of the first metal layer.

[0006] Based on the above, by making the light-shielding layer in the display device provided by the present disclosure include a first metal layer and a second metal layer and integrating the light-shielding layer and the color resist layer on the same thin film transistor substrate, the light-shielding layer can have the characteristics of low transmittance and / or low reflectivity, and the phenomenon of perceiving color mixing when viewing the display device at an oblique viewing angle can be reduced, so as to improve the contrast effect of the display device provided by another embodiment of the present disclosure at a wide viewing angle.

[0007] To make the above features and advantages of the present disclosure more obvious and understandable, specific embodiments are hereinafter given and described in detail in conjunction with the accompanying drawings as follows. Brief Description of the Drawings

[0008] Figure 1 A cross-sectional schematic view of the display device according to the first embodiment of the present disclosure;

[0009] Figure 2 A cross-sectional schematic diagram of the display device according to the second embodiment of the present disclosure;

[0010] Figure 3 A cross-sectional schematic diagram of the display device according to the third embodiment of the present disclosure;

[0011] Figure 4 A cross-sectional schematic diagram of the display device according to the fourth embodiment of the present disclosure;

[0012] Figure 5 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the first embodiment of the present disclosure;

[0013] Figure 6 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the second embodiment of the present disclosure;

[0014] Figure 7 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the third embodiment of the present disclosure;

[0015] Figure 8 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the fourth embodiment of the present disclosure;

[0016] Figure 9 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the fifth embodiment of the present disclosure;

[0017] Figure 10 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the sixth embodiment of the present disclosure;

[0018] Figure 11 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the seventh embodiment of the present disclosure;

[0019] Figure 12 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the eighth embodiment of the present disclosure;

[0020] Figure 13 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the ninth embodiment of the present disclosure;

[0021] Figure 14 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the tenth embodiment of the present disclosure;

[0022] Figure 15 A partial cross-sectional schematic diagram of the area where a light-shielding layer is provided in the display device according to the eleventh embodiment of the present disclosure;

[0023] Figure 16A partial cross-sectional view of a region provided with a light-shielding layer in the display device according to the twelfth embodiment of the present disclosure. Detailed implementation manners

[0024] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0025] The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that, for the convenience of the reader's understanding and the simplicity of the drawings, only a part of the electronic device is shown in the multiple drawings of the present disclosure, and the specific elements in the drawings are not drawn to actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present disclosure.

[0026] Throughout the specification of the present disclosure and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art should understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that perform the same function but have different names. In the following specification and claims, words such as "comprising", "including", and "having" are open-ended words, and thus should be interpreted as meaning "including but not limited to...". Therefore, when the description of the present disclosure uses the terms "comprising", "including", and / or "having", they specify the presence of corresponding features, regions, steps, operations, and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations, and / or components.

[0027] The directional terms mentioned herein, such as "upper", "lower", "front", "rear", "left", "right", etc., are only with reference to the directions in the drawings. Therefore, the directional terms used are for illustration and not for limiting the present disclosure. In the drawings, each drawing shows the general characteristics of the methods, structures, and / or materials used in a specific embodiment. However, these drawings should not be construed as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative dimensions, thicknesses, and positions of each film layer, region, and / or structure may be reduced or enlarged.

[0028] When a corresponding component (such as a film layer or a region) is referred to as "on another component", it can be directly on another component, or there may be other components between the two. On the other hand, when a component is referred to as "directly on another component", there are no components between the two. In addition, when a component is referred to as "on another component", there is an up-and-down relationship between the two in the top view direction, and this component can be above or below the other component, and this up-and-down relationship depends on the orientation of the device.

[0029] The terms "about", "substantially", or "approximately" are generally interpreted as within 10% of a given value or range, or within 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0030] The ordinal terms used in the specification and claims, such as "first", "second", etc., are used to modify elements and do not in themselves imply or represent that the (or those) elements have any previous ordinal number, nor do they represent the order of one element relative to another element or the order in a manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name. The same terms need not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claim.

[0031] It should be noted that, without departing from the spirit of this disclosure, the features in several different embodiments can be replaced, reorganized, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily mixed and used.

[0032] The electrical connections or couplings described in this disclosure can refer to direct connections or indirect connections. In the case of a direct connection, the endpoints of the components on two circuits are directly connected or connected to each other by a conductor segment. In the case of an indirect connection, there are transistors, diodes, capacitors, inductors, other suitable components, or combinations of the above components between the endpoints of the components on two circuits, but not limited thereto.

[0033] In this disclosure, the thickness, length, width, and area can be measured by an optical microscope, and the thickness can be measured from a cross-sectional image in an electron microscope, but not limited thereto. Additionally, there may be a certain error between any two values or directions being compared. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction can be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction can be between 0 degrees and 10 degrees.

[0034] The display device disclosed herein can be a non-self-emitting display device or a self-emitting display device, and can be a double-sided display device. The display device can include, for example, liquid crystal, light emitting diode (LED), quantum dot (QD), fluorescence, phosphor, other suitable display media, or a combination of the above. The light emitting diode can include, for example, organic light emitting diode (OLED), micro-light emitting diode (micro-LED, mini-LED), submillimeter light emitting diode (mini-LED), or quantum dot light emitting diode (QDLED), but is not limited thereto. It should be noted that the display device can be any permutation and combination of the foregoing, but is not limited thereto. In addition, the shape of the display device can be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The display device can have peripheral systems such as a driving system, a control system, and a light source system.

[0035] Figure 1 It is a schematic cross-sectional view of the display device according to the first embodiment of the present disclosure.

[0036] Please refer to Figure 1 , the display device 10a of this embodiment includes a thin film transistor substrate SB1, a counter substrate SB2, a display medium LC, a data line pattern DL, a light shielding layer 100, and a color resist layer CF, but the present disclosure is not limited thereto. In some embodiments, the display device 10a can be applied to electronic devices with high pixel density such as virtual reality displays.

[0037] The thin film transistor substrate SB1 may, for example, include a first substrate (not shown) and active elements (not shown), but the present disclosure is not limited thereto. In some embodiments, the first substrate includes a flexible substrate or a non-flexible substrate, and the material of the first substrate may include glass, plastic, or a combination thereof. For example, the first substrate may include quartz, sapphire, polymethyl methacrylate (PMMA), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), or other suitable materials or a combination of the above materials. In the present embodiment, the material of the first substrate includes glass, but the present disclosure is not limited thereto. The active elements are, for example, disposed on the first substrate. In some embodiments, the active elements may include a gate (not shown), a source (not shown), a drain (not shown), and a semiconductor layer (not shown), but the present disclosure is not limited thereto. The gate may, for example, at least partially overlap with the semiconductor layer, and the region where the semiconductor layer overlaps with the gate may be regarded as the channel region of the active element. The source and the drain are, for example, separated from each other and are each electrically connected to the semiconductor layer. In some embodiments, the material of the semiconductor layer may include amorphous silicon, low temperature polycrystalline silicon (LTPS), metal oxide, other suitable materials, or a combination thereof, and the metal oxide may include Indium Gallium Zinc Oxide (IGZO), and the present disclosure is not limited thereto.

[0038] The counter substrate SB2 is, for example, correspondingly disposed on the thin film transistor substrate SB1. The material of the counter substrate SB2 may, for example, be the same as or similar to the material of the first substrate of the thin film transistor substrate SB1, and will not be described herein again.

[0039] The display medium LC is, for example, sandwiched between the thin film transistor substrate SB1 and the counter substrate SB2. In the present embodiment, the material of the display medium LC includes liquid crystal molecules. For example, the display medium LC may include liquid crystal molecules of the electrically controlled birefringence (ECB) type, liquid crystal molecules of the vertical alignment (VA) type, or other suitable liquid crystal molecules, and the present disclosure is not limited thereto. The display medium LC may, for example, be formed between the thin film transistor substrate SB1 and the counter substrate SB2 by the one drop fill (ODF) process, but the present disclosure is not limited thereto.

[0040] The data line pattern DL is disposed on the thin film transistor substrate SB1, for example. In some embodiments, the data line pattern DL may extend in a direction perpendicular to the top view direction n of the display device 10a, but the present disclosure is not limited thereto. The source of the active element in the thin film transistor substrate SB1 may be electrically connected to the corresponding data line pattern DL to receive the corresponding data signal, for example. In some embodiments, the material of the data line pattern DL may each include molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), silver (Ag), other suitable metals, or alloys or combinations of the above materials, but the present disclosure is not limited thereto.

[0041] The light-shielding layer 100 is disposed on the data line pattern DL, for example. In the present embodiment, the light-shielding layer 100 is disposed on the thin film transistor substrate SB1 and is located between the thin film transistor substrate SB1 and the display medium LC. In the present embodiment, in the cross-sectional view of the display device 10a, the width W1 of the light-shielding layer 100 is greater than the width W2 of the data line pattern DL. The material of the light-shielding layer 100 may include a material with lower penetrability and / or lower reflectivity, whereby the light-shielding layer 100 can be used, for example, to shield the components and traces (such as the data line pattern DL and / or the active elements in the thin film transistor substrate SB1) inside the display device 10a that are not intended to be seen by the user. That is, the light-shielding layer 100 can be used, for example, to define the opening area R1 and the non-opening area R2 of the display device 10a. In the present embodiment, the material of the light-shielding layer 100 may include conductive materials such as metals and metal oxides and / or insulating materials such as oxides and nitrides. The specific materials included in the light-shielding layer 100 will be described in detail in the following embodiments. In some embodiments, if the material of the light-shielding layer 100 includes a conductive material, the light-shielding layer 100 may have the same potential as the common electrode (not shown), but the present disclosure is not limited thereto. In the present embodiment, the light-shielding layer 100 includes a multi-layer structure, and the specific structure of this multi-layer structure will be described in detail in the following embodiments.

[0042] The color filter layer CF is disposed, for example, between the data line pattern DL and the light-shielding layer 100. In this embodiment, the color filter layer CF is disposed on the thin-film transistor substrate SB1 and is located between the thin-film transistor substrate SB1 and the display medium LC. Based on this, the display device 10a shown in this embodiment includes a lower substrate that integrally forms the color filter layer CF and active elements on a first substrate (colorfilter on array; COA) in sequence. In this embodiment, the color filter layer CF includes a first color filter CF1, a second color filter CF2, and a third color filter CF3. The optical functions included in the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be different from each other, for example. For example, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be a red color filter pattern, a green color filter pattern, and a blue color filter pattern, respectively, but the present disclosure is not limited thereto. In some embodiments, the color filters adjacent to each other among the first color filter CF1, the second color filter CF2, and the third color filter CF3 may overlap on the data line pattern DL. For example, the first color filter CF1 and the second color filter CF2 may overlap on the data line pattern DL. Based on this, the overlapping portion of the first color filter CF1 and the second color filter CF2 may have a light-shielding and / or antireflection effect. Similarly, the overlapping portions of the second color filter CF2 and the third color filter CF3 and the overlapping portions of the third color filter CF3 and the first color filter CF1 may also have a light-shielding and / or antireflection effect.

[0043] In some embodiments, the display device 10a may further include a planarization layer PL. The planarization layer PL is disposed, for example, on the thin-film transistor substrate SB1 and is located between the color filter layer CF and the light-shielding layer 100. The material of the planarization layer PL may be an organic insulating material, for example, but the present disclosure is not limited thereto. In this embodiment, the planarization layer PL has a relatively flat top surface so that the light-shielding layer 100 formed thereon may have a relatively good yield.

[0044] In some embodiments, the display device 10a may further include a backlight module (not shown). The backlight module is, for example, disposed on the surface of the thin film transistor substrate SB1 away from the opposite substrate SB2, but the present disclosure is not limited thereto. The backlight module may also be, for example, disposed on the side surface of the thin film transistor substrate SB1. In some embodiments, the backlight module may include a reflective sheet (not shown), a light guide plate (not shown), a lower diffusion sheet (not shown), and an upper diffusion sheet (not shown), wherein the reflective sheet, the light guide plate, the lower diffusion sheet, and the upper diffusion sheet may be stacked in this order, but the present disclosure is not limited thereto. The reflective sheet, for example, has a high reflectivity and can be used, for example, to reflect the light passing through the light guide plate back into the light guide plate again, thereby increasing the utilization efficiency of light in the display device 10a. The light guide plate, for example, has high light transmittance and can be used, for example, to guide the traveling direction of light. Specifically, the light guide plate can provide the light emitted by a direct-lit light source (not shown) or an edge-lit light source (not shown) into the display device 10a. The diffusion sheet is, for example, used to diffuse the light from the light guide plate, and has high light transmittance, and the upper diffusion sheet is, for example, used to further diffuse the light from the light guide plate and can be used, for example, for concealing flaws.

[0045] In this embodiment, by integrating the light-shielding layer 100 and the color resist layer CF on the thin film transistor substrate SB1, the light-shielding layer 100 disposed on the color resist layer CF can reduce the phenomenon of color mixing of light, for example, from the backlight module, so as to improve the contrast effect of the display device 10a at a wide viewing angle.

[0046] It should be noted that although this embodiment shows integrating the light-shielding layer 100 and the color resist layer CF on the thin film transistor substrate SB1, the present disclosure is not limited thereto. In other embodiments, the light-shielding layer 100 and the color resist layer CF may be integrated on the opposite substrate SB2.

[0047] Figure 2 It is a cross-sectional schematic diagram of the display device according to the second embodiment of the present disclosure. It should be noted that Figure 2 The component numbers and some contents of the Figure 1 embodiment may be adopted, wherein the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0048] Please refer to Figure 2 , the main difference between the display device 10b of this embodiment and the aforementioned display device 10a is that the planarization layer PL includes a first planarization layer PL1 and a second planarization layer PL2, and the light-shielding layer 100 is disposed between the first planarization layer PL1 and the second planarization layer PL2.

[0049] Specifically, in the present embodiment, the flat layer PL includes a first flat layer PL1 and a second flat layer PL2 that are stacked on top of each other in the top view direction n of the display device 10b. The first flat layer PL1, for example, has a depression PL1_RE, and the depression PL1_RE can be formed, for example, by a patterning process using a binary mask or a half-tone mask. The light-shielding layer 100 is disposed, for example, in the depression PL1_RE of the first flat layer PL1, and the second flat layer PL2 covers the light-shielding layer 100, for example.

[0050] In the present embodiment, the second flat layer PL2 is disposed on the first flat layer PL1 and the thickness TP1 of the first flat layer PL1 is greater than the thickness TP2 of the second flat layer PL2, but the present disclosure is not limited thereto.

[0051] In another embodiment, the first flat layer PL may not have the depression PL1_RE, and the light-shielding layer 100 is disposed on the surface of the first flat layer PL1, but the present disclosure is not limited thereto.

[0052] Figure 3 It is a cross-sectional schematic diagram of the display device according to the third embodiment of the present disclosure. It should be noted that Figure 3 The component numbers and some contents of the Figure 1 embodiment can be adopted, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0053] Please refer to Figure 3 , the main difference between the display device 10c of the present embodiment and the aforementioned display device 10a is that the light-shielding layer 100 is disposed between the flat layer PL and the color filter layer CF.

[0054] In the present embodiment, the formation process of the light-shielding layer 100 can precede the formation process of the flat layer PL. Therefore, the light-shielding layer 100 can be disposed between the flat layer PL and the color filter layer CF. In the present embodiment, the light-shielding layer 100 is disposed on the overlapping portion of adjacent color filters, so that the light-shielding layer 100 can present an arc shape in the cross-sectional view of the display device 10c. Specifically, the light-shielding layer 100 of the present embodiment has a first portion 100A and a second portion 100B, where the first portion 100A overlaps with the overlapping portion of adjacent color filters in the top view direction n of the display device 10c, and the second portion 100B does not overlap with the overlapping portion of adjacent color filters in the top view direction n of the display device 10c. Based on this, the first portion 100A of the light-shielding layer 100 is a curved surface in the cross-sectional view of the display device 10c, and the second portion 100B of the light-shielding layer 100 is a flat surface in the cross-sectional view of the display device 10c.

[0055] Figure 4A cross-sectional schematic diagram of the display device according to the fourth embodiment of the present disclosure. It should be noted that Figure 4 the component numbers and partial content of the Figure 1 embodiment can be adopted, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0056] Please refer to Figure 4 , the main difference between the display device 10d of this embodiment and the aforementioned display device 10a is that: the light-shielding layer 100 is disposed between the data line pattern DL and the color filter layer CF.

[0057] In this embodiment, the formation process of the light-shielding layer 100 can precede the formation process of the color filter layer CF. Therefore, the light-shielding layer 100 can be disposed between the data line pattern DL and the color filter layer CF. From another perspective, the color filter layer CF can be disposed between the planarization layer PL and the light-shielding layer 100.

[0058] In this embodiment, the display device 10d further includes an insulating layer PV1, where the insulating layer PV1 is disposed between the light-shielding layer 100 and the data line pattern DL to electrically insulate the light-shielding layer 100 from the data line pattern DL. The material of the insulating layer PV1 can, for example, include inorganic materials (such as: silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials), organic materials (such as: polyimide-based resin, epoxy-based resin, or acrylic-based resin), or a combination of the above, but the present disclosure is not limited thereto.

[0059] Figure 5 A partial cross-sectional schematic diagram of the area where the light-shielding layer is provided in the display device according to the first embodiment of the present disclosure, which shows a partial cross-sectional schematic diagram of the structure of the light-shielding layer and its arrangement relationship with each component. It should be noted that Figure 5 the component numbers and partial content of the Figure 1 embodiment can be adopted, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0060] Please refer to Figure 5 , hereinafter, taking the Figure 1 area r of the display device 10a shown as an example for illustration, but the present disclosure is not limited thereto. That is, Figure 5 the area r shown can be applied to the display device 10b, the display device 10c, or the display device 10d. In this embodiment, the display device 10a further includes a pixel electrode PE1, an insulating layer PV2, and a common electrode CE1.

[0061] The pixel electrode PE1 is disposed, for example, on the planar layer PL. In some embodiments, the material of the pixel electrode PE1 may include a metal oxide conductive material (e.g., indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide), but the present disclosure is not limited thereto. The pixel electrode PE1 is disposed, for example, in the opening region R1 of the display device 10a, that is, in the region where light can pass through.

[0062] The insulating layer PV2 is disposed, for example, on the pixel electrode PE1. In some embodiments, the insulating layer PV2 covers the pixel electrode PE1, but the present disclosure is not limited thereto. The material of the insulating layer PV2 may be the same as or similar to the material of the insulating layer PV1, which will not be described herein again.

[0063] The common electrode CE1 is disposed, for example, on the insulating layer PV2. In some embodiments, the material of the common electrode CE1 may include a metal oxide conductive material (e.g., indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide), but the present disclosure is not limited thereto. In the present embodiment, the common electrode CE1 includes a slit Slit1 located in the opening region R1, but the present disclosure is not limited thereto.

[0064] In the present embodiment, the light-shielding layer 100a is disposed between the insulating layer PV2 and the common electrode CE1 and includes a two-layer structure. Specifically, the light-shielding layer 100a includes a first metal layer 110 and a second metal layer 120 that are stacked on top of each other in the top-down direction n of the display device 10a, that is, the first metal layer 110 is disposed on the insulating layer PV2, and the second metal layer 120 is disposed on the first metal layer 110. The material of the first metal layer 110 includes, for example, a metal (e.g., molybdenum (Mo), aluminum (Al), titanium (Ti), titanium nitride (TiN), tungsten (W), silver (Ag), or a combination thereof), and the material of the second metal layer 120 includes, for example, a metal oxide. In the present embodiment, the material of the first metal layer 110 is molybdenum (Mo), tungsten (W), or a combination thereof, and the material of the second metal layer 120 is molybdenum tantalum oxide (MoO x Ta), but the present disclosure is not limited thereto. In some other embodiments, the color of the material of the second metal layer 120 may be black or approximately black, but the present disclosure is not limited thereto. Based on this, the light-shielding layer 100a can be used to define the non-opening region R2 of the display device 10a.

[0065] The thickness T1 of the first metal layer 110 and the thickness T2 of the second metal layer 120 are, for example, 10 nm to 100 nm. In this embodiment, the thickness T2 of the second metal layer 120 is greater than the thickness T1 of the first metal layer 110. In some embodiments, the ratio of the thickness T1 of the first metal layer 110 to the thickness T2 of the second metal layer 120 may be greater than or equal to 0.1 and less than 1. For example, the thickness T1 of the first metal layer 110 is 50 nm, and the thickness T2 of the second metal layer 120 is 60 nm, but the present disclosure is not limited thereto. In this embodiment, the refractive index of the first metal layer 110 is greater than the refractive index of the second metal layer 120. For example, when the material of the first metal layer 110 is Mo and has a thickness of 50 nm, the refractive index of the first metal layer 110 is 3.16629. When the material of the second metal layer 120 is MoO x Ta and has a thickness of 60 nm, the refractive index of the second metal layer 120 is 2.34954. In this embodiment, the extinction coefficient of the first metal layer 110 is greater than the extinction coefficient of the second metal layer 120. For example, when the material of the first metal layer 110 is Mo and has a thickness of 50 nm, the extinction coefficient of the first metal layer 110 when irradiated with light having a wavelength of 550 nm is 2.23463. When the material of the second metal layer 120 is MoO x Ta and has a thickness of 60 nm, the extinction coefficient of the second metal layer 120 when irradiated with light having a wavelength of 550 nm is 0.49925.

[0066] In some other embodiments, the thickness T2 of the second metal layer 120 is less than the thickness T1 of the first metal layer 110. In some embodiments, the ratio of the thickness T1 of the first metal layer 110 to the thickness T2 of the second metal layer 120 may be greater than 1 and less than or equal to 10. For example, the ratio of the thickness T1 of the first metal layer 110 to the thickness T2 of the second metal layer 120 may be 2, 3, 4, 5, 6, 7, 8, 9, but the present disclosure is not limited thereto.

[0067] By making the stack and / or parameters of the light-shielding layer 100a have the above relationships, the light-shielding layer 100a can have the characteristics of low transmittance and / or low reflectance, which can, for example, reduce the situation where light from the backlight module penetrates the light-shielding layer 100a and / or, for example, reduce the situation where light from the environment is reflected by the light-shielding layer 100a, so as to improve the display effect of the display device 10a.

[0068] Figure 6 It is a partial cross-sectional schematic diagram of the area where the light-shielding layer is provided in the display device according to the second embodiment of the present disclosure. It should be noted that, Figure 6 can be continued to use Figure 5Element numbers and partial contents of the embodiments, where the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical content is omitted.

[0069] Please refer to Figure 6 , the main difference between the light-shielding layer 100b of this embodiment and the aforementioned light-shielding layer 100a is that: the light-shielding layer 100b further includes a third metal layer 130 and a fourth metal layer 140.

[0070] In this embodiment, the light-shielding layer 100b includes a four-layer structure. Specifically, the light-shielding layer 100b includes a first metal layer 110, a second metal layer 120, a third metal layer 130, and a fourth metal layer 140 that are stacked on top of each other in the top-down direction n of the display device 10a, that is, the first metal layer 110 is disposed on the insulating layer PV2, the second metal layer 120 is disposed on the first metal layer 110, the third metal layer 130 is disposed on the second metal layer 120, and the fourth metal layer 140 is disposed on the third metal layer 130. The material of the third metal layer 130 includes, for example, metals (such as molybdenum (Mo), aluminum (Al), titanium (Ti), titanium nitride (TiN), tungsten (W), silver (Ag), or a combination thereof), and the material of the fourth metal layer 140 includes, for example, metal oxides. In this embodiment, the material of the third metal layer 130 is molybdenum (Mo), tungsten (W), or a combination thereof, and the material of the fourth metal layer 140 is molybdenum tantalum oxide (MoO x Ta), but the present disclosure is not limited thereto. In some other embodiments, the color of the material of the second metal layer 120 may be black or approximately black, but the present disclosure is not limited thereto.

[0071] The thickness T3 of the third metal layer 130 and the thickness T4 of the fourth metal layer 140 are, for example, 10 nm to 100 nm. In this embodiment, the thickness T4 of the fourth metal layer 140 is greater than the thickness T3 of the third metal layer 130. In some embodiments, the ratio of the thickness T3 of the third metal layer 130 to the thickness T4 of the fourth metal layer 140 may be greater than or equal to 0.1 and less than 1. For example, the thickness T3 of the third metal layer 130 is 50 nm, and the thickness T4 of the fourth metal layer 140 is 60 nm, but the present disclosure is not limited thereto.

[0072] In this embodiment, the refractive index of the third metal layer 130 is greater than the refractive index of the fourth metal layer 140. For example, when the material of the third metal layer 130 is Mo and has a thickness of 50 nm, the refractive index of the third metal layer 130 is 3.16629. When the material of the fourth metal layer 140 is MoO x Ta and has a thickness of 60 nm, the refractive index of the fourth metal layer 140 is 2.34954.

[0073] In this embodiment, the thickness T4 of the fourth metal layer 140 is greater than the thickness T2 of the second metal layer 120. In some embodiments, the ratio of the thickness T4 of the fourth metal layer 140 to the thickness T2 of the second metal layer 120 is greater than 0.5 and less than or equal to 1.7.

[0074] By making the stack and / or parameters of the light-shielding layer 100b have the above relationships, the light-shielding layer 100b can have the characteristics of low transmittance and / or low reflectivity, which can, for example, reduce the situation where light from the backlight module penetrates the light-shielding layer 100b and / or, for example, reduce the situation where light from the environment is reflected by the light-shielding layer 100b, so as to improve the display effect of the display device 10a.

[0075] It should be noted that, in other embodiments, the light-shielding layer 100b may not include the fourth metal layer 140, that is, the light-shielding layer 100b includes a three-layer structure.

[0076] Figure 7 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the third embodiment of the present disclosure. It should be noted that Figure 7 The component numbers and some contents of the Figure 5 embodiment can be followed, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0077] Please refer to Figure 7 , the main difference between the light-shielding layer 100c of this embodiment and the aforementioned light-shielding layer 100a is that: the light-shielding layer 100c further includes a first insulating layer 210 and a second insulating layer 220.

[0078] In this embodiment, the light-shielding layer 100c includes a four-layer structure. Specifically, the light-shielding layer 100c includes a first metal layer 110, a first insulating layer 210, a second metal layer 120, and a second insulating layer 220 that are stacked on top of each other in the top view direction n of the display device 10a. That is, the first metal layer 110 is disposed on the insulating layer PV2, the second metal layer 120 is disposed on the first metal layer 110, the first insulating layer 210 is disposed between the first metal layer 110 and the second metal layer 120, and the second insulating layer 220 is disposed on the second metal layer 120. The material of the first metal layer 110 and the material of the second metal layer 120 are Mo, W, or a combination thereof. The material of the first insulating layer 210 and the material of the second insulating layer 220 may, for example, include inorganic materials, which may, for example, be silicon oxide, silicon nitride, or silicon oxynitride. In addition, the material of the first insulating layer 210 and the material of the second insulating layer 220 may be the same or different from each other. In some embodiments, the material of the first insulating layer 210 and the material of the second insulating layer 220 are the same, where the material of the first insulating layer 210 and the material of the second insulating layer 220 are both silicon nitride, but the present disclosure is not limited thereto. In other embodiments, the material of the first insulating layer 210 and the material of the second insulating layer 220 are different, where the material of the first insulating layer 210 is silicon nitride and the material of the second insulating layer 220 is silicon oxide.

[0079] The thickness TI1 of the first insulating layer 210 and the thickness TI2 of the second insulating layer 220 are, for example, 10 nm to 100 nm. The thickness TI1 of the first insulating layer 210 may be greater than, equal to, or less than the thickness TI2 of the second insulating layer 220. For example, the thickness TI1 of the first insulating layer 210 is 50 nm, and the thickness TI2 of the second insulating layer 220 is 50 nm, but the present disclosure is not limited thereto. In this embodiment, when the material of the first insulating layer 210 and the material of the second insulating layer 220 are both silicon nitride, the ratio between the thickness TI2 of the second insulating layer 220 and the thickness TI1 of the first insulating layer 210 is greater than or equal to 0.2 and less than or equal to 1.7; when the material of the first insulating layer 210 is silicon nitride and the material of the second insulating layer 220 is silicon oxide, the ratio between the thickness TI2 of the second insulating layer 220 and the thickness TI1 of the first insulating layer 210 is greater than 0 and less than or equal to 1.5. In this embodiment, when the material of the first insulating layer 210 is silicon nitride and the material of the second insulating layer 220 is silicon oxide, the refractive index of the second insulating layer 220 is less than the refractive index of the first insulating layer 210. Specifically, the refractive index of the second insulating layer 220 is 1.498, and the refractive index of the first insulating layer 210 is 1.89131.

[0080] By making the stack and / or parameters of the light-shielding layer 100c have the above relationships, the light-shielding layer 100c can have the characteristics of low transmittance and / or low reflectivity, which can, for example, reduce the situation where light from the backlight module penetrates the light-shielding layer 100c and / or, for example, reduce the situation where light from the environment is reflected by the light-shielding layer 100c, so as to improve the display effect of the display device 10a.

[0081] It should be noted that, in other embodiments, the light-shielding layer 100c may not include the second insulating layer 220, that is, the light-shielding layer 100c includes a three-layer structure.

[0082] Figure 8 It is a partial cross-sectional schematic diagram of the area where the light-shielding layer is provided in the display device according to the fourth embodiment of the present disclosure. It should be noted that Figure 8 can follow Figure 7 the component numbers and partial contents of the embodiments, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0083] Please refer to Figure 8 , the main difference between the light-shielding layer 100d in this embodiment and the aforementioned light-shielding layer 100c is that: the light-shielding layer 100d does not include the second insulating layer 220.

[0084] It should be noted that, in this embodiment, the overlapping part 300 of the common electrode CE1 (refractive index is 1.77384) and the second metal layer 120 can be used as a part of the light-shielding layer 100d. Therefore, the light-shielding layer 100d in this embodiment can also be regarded as including a four-layer structure.

[0085] The thickness TCE of the overlapping part of the common electrode CE1 and the second metal layer 120 can be, for example, 10 nm to 100 nm. For example, the above-mentioned thickness TCE is 42 nm, but the present disclosure is not limited thereto.

[0086] By making the stack and / or parameters of the light-shielding layer 100d have the above relationships, the light-shielding layer 100d can have the characteristics of low transmittance and / or low reflectivity, which can, for example, reduce the situation where light from the backlight module penetrates the light-shielding layer 100d and / or, for example, reduce the situation where light from the environment is reflected by the light-shielding layer 100d, so as to improve the display effect of the display device 10a.

[0087] Figure 9 It is a partial cross-sectional schematic diagram of the area where the light-shielding layer is provided in the display device according to the fifth embodiment of the present disclosure. It should be noted that Figure 9 can follow Figure 5 the component numbers and partial contents of the embodiments, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0088] Please refer to Figure 9 , the main difference from the embodiment of Figure 5 is that the light-shielding layer 100a is disposed on the common electrode CE1. That is, in this embodiment, the common electrode CE1 is disposed between the light-shielding layer 100a and the insulating layer PV2.

[0089] Figure 10 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the sixth embodiment of the present disclosure. It should be noted that Figure 10 the element numbers and some contents of the embodiment of Figure 6 can be adopted, where the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical content is omitted.

[0090] Please refer to Figure 10 , the main difference from the embodiment of Figure 6 is that the light-shielding layer 100b is disposed on the common electrode CE1. That is, in this embodiment, the common electrode CE1 is disposed between the light-shielding layer 100b and the insulating layer PV2.

[0091] Figure 11 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the seventh embodiment of the present disclosure. It should be noted that Figure 11 the element numbers and some contents of the embodiment of Figure 7 can be adopted, where the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical content is omitted.

[0092] Please refer to Figure 11 , the main difference from the embodiment of Figure 7 is that the light-shielding layer 100c is disposed on the common electrode CE1. That is, in this embodiment, the common electrode CE1 is disposed between the light-shielding layer 100c and the insulating layer PV2.

[0093] Figure 12 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the eighth embodiment of the present disclosure. It should be noted that Figure 12 the element numbers and some contents of the embodiment of Figure 8 can be adopted, where the same or similar element numbers are used to represent the same or similar elements, and the description of the same technical content is omitted.

[0094] Please refer to Figure 12 , the main difference from the embodiment of Figure 8 is that the light-shielding layer 100d' is disposed on the common electrode CE1. That is, in this embodiment, the common electrode CE1 is disposed between the light-shielding layer 100d' and the insulating layer PV2, and the light-shielding layer 100d' further includes a first conductive layer 300.

[0095] Specifically, the light-shielding layer 100d of this embodiment includes a first metal layer 110, a first insulating layer 210, a second metal layer 120, and a first conductive layer 300 that are stacked on top of each other in the top view direction n of the display device 10a. The material of the first conductive layer 300 may be the same as or similar to that of the common electrode CE1, which will not be elaborated here.

[0096] Figure 13 FIG. is a partial cross-sectional view of an area where a light-shielding layer is provided in the display device according to the ninth embodiment of the present disclosure. It should be noted that Figure 13 can be followed Figure 1 with Figure 5 the component numbers and some contents of the embodiments, where the same or approximate numbers are used to represent the same or approximate components, and the description of the same technical content is omitted.

[0097] Please refer to Figure 13 which is different from Figure 5 the main difference of the embodiment is that the display device 10a of this embodiment further includes an insulating layer PV3 and a pixel electrode PE2.

[0098] The insulating layer PV3 is disposed, for example, on the common electrode CE1. In some embodiments, the insulating layer PV3 covers the common electrode CE1, but the present disclosure is not limited thereto. The material of the insulating layer PV3 may be the same as or similar to that of the insulating layer PV1, which will not be elaborated here.

[0099] The pixel electrode PE2 is disposed, for example, on the insulating layer PV3. The material of the pixel electrode PE2 may be the same as or similar to that of the pixel electrode PE1, which will not be elaborated here. In this embodiment, the pixel electrode PE2 includes a slit Slit2 located in the opening region R1, but the present disclosure is not limited thereto.

[0100] It is worth noting that the light-shielding layer 100 of this embodiment can be any one of the forms of the light-shielding layer 100a, the light-shielding layer 100b, the light-shielding layer 100c, and the light-shielding layer 100d in the foregoing embodiments.

[0101] Figure 14 FIG. is a partial cross-sectional view of an area where a light-shielding layer is provided in the display device according to the tenth embodiment of the present disclosure. It should be noted that Figure 14 can be followed Figure 13 the component numbers and some contents of the embodiments, where the same or approximate numbers are used to represent the same or approximate components, and the description of the same technical content is omitted.

[0102] Please refer to Figure 14 which is different from Figure 13The main difference in the embodiment is that the light-shielding layer 100 is disposed between the common electrode CE1 and the insulating layer PV3. That is, in this embodiment, the common electrode CE1 is disposed between the light-shielding layer 100 and the insulating layer PV2.

[0103] Figure 15 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the eleventh embodiment of the present disclosure. It should be noted that Figure 15 The component numbers and some contents of the Figure 13 embodiment can be adopted, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0104] Please refer to Figure 15 which is mainly different from the Figure 13 embodiment in that the display device 10a of this embodiment further includes an insulating layer PV4 and a common electrode CE2.

[0105] The insulating layer PV4 is disposed, for example, on the pixel electrode PE2. In some embodiments, the insulating layer PV4 covers the pixel electrode PE2, but the present disclosure is not limited thereto. The material of the insulating layer PV4 can be the same as or similar to the material of the insulating layer PV1, which will not be elaborated herein.

[0106] The common electrode CE2 is disposed, for example, on the insulating layer PV4. The material of the common electrode CE2 can be the same as or similar to the material of the common electrode CE1, which will not be elaborated herein. In this embodiment, the common electrode CE2 includes a slit Slit3 located in the opening region R1, but the present disclosure is not limited thereto.

[0107] In addition, in this embodiment, the light-shielding layer 100 is disposed between the common electrode CE2 and the insulating layer PV4.

[0108] Figure 16 FIG. is a partial cross-sectional view of a region where a light-shielding layer is provided in the display device according to the twelfth embodiment of the present disclosure. It should be noted that Figure 16 The component numbers and some contents of the Figure 15 embodiment can be adopted, where the same or similar component numbers are used to represent the same or similar components, and the description of the same technical content is omitted.

[0109] Please refer to Figure 16 which is mainly different from the Figure 15 embodiment in that the light-shielding layer 100 is disposed on the common electrode CE2. That is, in this embodiment, the common electrode CE2 is disposed between the light-shielding layer 100 and the insulating layer PV4.

[0110] In summary, by making the stack and / or parameters of the light-shielding layer in the display device provided by an embodiment of the present disclosure have the relationships described in the foregoing embodiments, the light-shielding layer can have the characteristics of low transmittance and / or low reflectivity, which can, for example, reduce the situation where light from the backlight module penetrates the light-shielding layer and / or, for example, reduce the situation where light from the environment is reflected by the light-shielding layer, so as to improve the display effect of the display device provided by an embodiment of the present disclosure.

[0111] Furthermore, in the display device provided by another embodiment of the present disclosure, by integrating the light-shielding layer and the color-resist layer on the same thin-film transistor substrate, the phenomenon of color mixing perceived when viewing the display device at an oblique viewing angle can be reduced, so as to improve the contrast effect of the display device provided by another embodiment of the present disclosure at a wide viewing angle.

[0112] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display device, characterized in that, Comprising: A thin-film transistor substrate; A counter substrate, correspondingly disposed on the thin-film transistor substrate; A display medium, sandwiched between the thin-film transistor substrate and the counter substrate; A data line pattern, disposed on the thin-film transistor substrate; A light-shielding layer, disposed on the data line pattern and including a first metal layer and a second metal layer; And A color resist layer, disposed between the data line pattern and the light-shielding layer, wherein the second metal layer is disposed on the first metal layer, and the thickness of the second metal layer is greater than the thickness of the first metal layer.

2. The display device according to claim 1, wherein the color resist layer includes a first color resist and a second color resist, and the first color resist and the second color resist overlap on the data line pattern.

3. The display device according to claim 1, wherein in a cross-sectional view of the display device, the width of the light-shielding layer is greater than the width of the data line pattern.

4. The display device according to claim 1, wherein the ratio of the thickness of the first metal layer to the thickness of the second metal layer is greater than or equal to 0.1 and less than 1.

5. The display device according to claim 1, further comprising a planarization layer, wherein the planarization layer is disposed between the color resist layer and the light-shielding layer.

6. The display device according to claim 1, further comprising a planarization layer, wherein the planarization layer includes a first planarization layer and a second planarization layer, and the light-shielding layer is disposed between the first planarization layer and the second planarization layer.

7. The display device according to claim 6, wherein the second planarization layer is disposed on the first planarization layer, and the thickness of the first planarization layer is greater than the thickness of the second planarization layer.

8. The display device according to claim 1, further comprising a planarization layer, wherein the light-shielding layer is disposed between the planarization layer and the color resist layer.

9. The display device according to claim 8, wherein the light-shielding layer has a first portion and a second portion, the first portion is a curved surface, and the second portion is a plane.

10. The display device according to claim 1, wherein the material of the first metal layer is Mo, W or a combination thereof, and the material of the second metal layer is a metal oxide.

11. The display device according to claim 1, wherein the refractive index of the first metal layer is greater than the refractive index of the second metal layer.

12. The display device according to claim 1, wherein the extinction coefficient of the first metal layer is greater than the extinction coefficient of the second metal layer.

13. The display device according to claim 1, wherein the light-shielding layer further includes a third metal layer and a fourth metal layer, and the fourth metal layer is disposed on the third metal layer.

14. The display device according to claim 13, wherein the material of the third metal layer is Mo, W or a combination thereof, and the material of the fourth metal layer is a metal oxide.

15. The display device according to claim 13, wherein the refractive index of the third metal layer is greater than the refractive index of the fourth metal layer.

16. The display device according to claim 13, wherein a ratio of a thickness of the fourth metal layer to a thickness of the second metal layer is greater than 1 and less than or equal to 6.

17. The display device according to claim 1, wherein materials of the first metal layer and the second metal layer are Mo, W, or a combination thereof.

18. The display device according to claim 17, wherein the light-shielding layer further includes a first insulating layer and a second insulating layer, the first insulating layer is disposed between the first metal layer and the second metal layer, and the second insulating layer is disposed on the second metal layer.

19. A display device, characterized in that, Comprising: A thin-film transistor substrate; An opposite substrate, correspondingly disposed on the thin-film transistor substrate; A display medium, sandwiched between the thin-film transistor substrate and the opposite substrate; A data line pattern, disposed on the thin-film transistor substrate; A light-shielding layer, disposed on the data line pattern and including a first metal layer and a second metal layer; And A color resist layer, disposed on the light-shielding layer, wherein the light-shielding layer is disposed between the data line pattern and the color resist layer, wherein the second metal layer is disposed on the first metal layer, and the thickness of the second metal layer is greater than the thickness of the first metal layer.

20. The display device according to claim 19, further comprising a planarization layer, wherein the color resist layer is disposed between the planarization layer and the light-shielding layer.

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