Trans-perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a trans-perovskite solar cell and a preparation method and application thereof. The trans-perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a perovskite layer, an electron transport layer and a top electrode layer. The hole transport layer is arranged on the transparent conductive substrate and is used for transporting holes. The perovskite layer is arranged on the hole transport layer and is used for photoelectric conversion. The electron transmission layer is arranged on the perovskite layer and is used for transmitting electrons. The top electrode layer is arranged on the electron transport layer and is used for collecting electrons. Wherein the hole transport layer is provided with an SAM material and a sulfonamide compound, the SAM material has an acidic group, the general formula of the sulfonamide compound is H2N-C6H4-SO2NH-R, and R is a hydrogen atom or an organic group. According to the invention, the problems that the SAM anchored at an unstable site is desorbed by a strong polar solvent of a perovskite precursor, so that pinholes and leakage current are increased, and the efficiency and stability of the cell are influenced can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of inverted perovskite solar cells, and in particular to an inverted perovskite solar cell, a preparation method thereof, and an application thereof. Background Art

[0002] Perovskite solar cells (PSCs) belong to the third generation of solar cells. They have the advantages of simple preparation methods, adjustable bandgaps, and excellent carrier properties. When they were first applied to solar cells, the energy conversion efficiency was only 3.8%. After more than a decade of development, the energy conversion efficiency and stability of perovskite solar cells have rapidly approached those of silicon solar cells with a development history of several decades.

[0003] Among them, in inverted perovskite solar cells, the application of self-assembled monolayers (SAM) has greatly improved the energy conversion efficiency and is widely used in the hole transport layer. However, due to their inherent amphiphilicity, SAM tend to aggregate during the deposition process on conductive glass. This aggregation prevents the formation of a uniform monolayer on the substrate, resulting in the formation of weak bonds through physical adsorption at some unstable sites rather than strong chemical bonds. SAM anchored at unstable sites will be desorbed by the strongly polar solvent of the perovskite precursor, causing an increase in pinholes and leakage current, ultimately affecting the efficiency and stability of the battery. Summary of the Invention

[0004] The main purpose of the present invention is to provide an inverted perovskite solar cell, a preparation method thereof, and an application thereof, so as to solve the technical problem that SAM anchored at unstable sites will be desorbed by the strongly polar solvent of the perovskite precursor, resulting in an increase in pinholes and leakage current, which will affect the efficiency and stability of the battery.

[0005] To achieve the above object, the present invention provides an inverted perovskite solar cell, comprising

[0006] a transparent conductive substrate;

[0007] a hole transport layer, disposed on the transparent conductive substrate and used for transporting holes;

[0008] a perovskite layer, disposed on the hole transport layer and used for photoelectric conversion;

[0009] an electron transport layer, disposed on the perovskite layer and used for transporting electrons; and

[0010] a top electrode layer, disposed on the electron transport layer and used for collecting electrons;

[0011] Among them, the hole transport layer is provided with a SAM material and a sulfonamide compound. The SAM material has an acidic group, and the general formula of the sulfonamide compound is: H2N-C6H4-SO2NH-R, where R is a hydrogen atom or an organic group.

[0012] In some embodiments, the acidic group of the SAM material is a phosphonic acid group.

[0013] In some embodiments, R has a pyridine group or a pyrimidine group.

[0014] In some embodiments, the sulfonamide compound is one of sulfapyridine, sulfadiazine, sodium sulfadiazine, sulfamethazine, and sodium sulfamethazine.

[0015] In some embodiments, the transparent conductive substrate includes a substrate and fluorine-doped tin oxide. The fluorine-doped tin oxide is disposed on the substrate, and the hole transport layer is disposed on the fluorine-doped tin oxide;

[0016] Preferably, the perovskite layer has metal ions;

[0017] Preferably, the material of the perovskite layer has Pb 2+ ;

[0018] Preferably, the area of the perovskite layer is greater than or equal to 1 cm 2 ;

[0019] Preferably, the hole transport layer does not contain nickel oxide;

[0020] Preferably, the sulfonamide compound is sulfanilamide;

[0021] Preferably, the sulfonamide compound is sulfadiazine;

[0022] Preferably, the sulfonamide compound is one of sulfathiazole, sulfisoxazole, and sulfamethoxazole.

[0023] In some embodiments, the sulfonamide compound is C 12 H 12 N4O2S, C 12 H 12 N4O2S and the C 20 H 23 N2O4P of the perovskite layer react to obtain C 32 H 35 N6O6PS, and the reaction formula is as follows:

[0024]

[0025] In some embodiments, the hole transport layer includes:

[0026] The SAM layer is disposed on the transparent conductive substrate and contains the SAM material; and

[0027] The sulfonamide compound layer is sandwiched between the SAM layer and the perovskite layer and contains the sulfonamide compound.

[0028] In some embodiments, in the hole transport layer, the SAM material and the sulfonamide compound are mixed with each other.

[0029] On the other hand, the present invention provides a method for preparing the above-mentioned inverted perovskite solar cell, and the preparation method includes the following steps:

[0030] (1) Prepare the SAM layer on the conductive glass substrate;

[0031] (2) Prepare the sulfonamide compound layer on the SAM layer;

[0032] (3) Prepare the perovskite layer on the sulfonamide compound layer;

[0033] (4) Prepare the electron transport layer on the perovskite layer;

[0034] (5) Prepare the metal electrode on the electron transport layer.

[0035] In some embodiments, the conductive glass substrate in step (1) is fluorine-doped tin oxide glass or indium-doped tin oxide glass;

[0036] Preferably, the SAM layer in step (1) includes any one or a combination of Me-4PACz, Ph-4PACz, DMAcPA, 4PADCB;

[0037] Preferably, the SAM is dissolved in ethanol or isopropanol, and the concentration range after dissolution is 0.01 mg / ml to 5 mg / ml; then it is spin-coated on the perovskite layer, the spin-coating speed range is 2000 rpm to 8000 rpm, and the spin-coating time range is 10 s to 50 s; after spin-coating, annealing treatment is carried out, the annealing temperature range is 80 °C to 120 °C, and the annealing time range is 5 min to 30 min;

[0038] Preferably, the sulfonamide compound in step (2) is dissolved in any one of ethanol, isopropanol, DMF, DMSO, and the concentration range after dissolution is 0.01 mg / ml to 5 mg / ml; then it is spin-coated on the SAM layer, the spin-coating speed range is 2000 rpm to 8000 rpm, and the spin-coating time range is 10 s to 50 s; after spin-coating, annealing treatment is carried out, the annealing temperature range is 80 °C to 120 °C, and the annealing time range is 5 min to 30 min;

[0039] Preferably, the perovskite layer in step (3) comprises any one or a combination of more than one of methylammonium lead iodide, formamidinium lead iodide, methylammonium lead bromide, formamidinium lead bromide, cesium lead iodide, cesium lead bromide, methylammonium tin iodide, and methylammonium tin bromide;

[0040] Preferably, the preparation method of the sulfonamide compound layer in step (3) is as follows:

[0041] Dissolve sulfadiazine in DMSO, spin-coat the fully dissolved solution on the SAM layer, and perform annealing treatment;

[0042] Alternatively, dissolve Me-4PACz and sulfadiazine in ethanol, spin-coat the fully dissolved solution on the SAM layer, and perform annealing treatment;

[0043] Preferably, the electron transport layer in step (4) comprises any one or a combination of more than one of C 60 , PCBM;

[0044] Preferably, the electron transport layer in step (4) comprises a host sublayer and a hole-blocking sublayer. The host sublayer is prepared on the perovskite layer and is used for transporting electrons; the hole-blocking sublayer is prepared on the host sublayer and is used for blocking holes; the hole-blocking sublayer comprises any one of BCP and tin oxide;

[0045] Preferably, the metal electrode in step (5) comprises any one of gold, silver, copper, and bismuth;

[0046] Preferably, the thickness range of the metal electrode in step (5) is from 50 nm to 300 nm.

[0047] On the other hand, the present invention provides an electronic device, comprising an electronic device and the above-described inverted perovskite solar cell, wherein the electronic device is electrically connected to the inverted perovskite solar cell.

[0048] Term Explanation

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0050] As used herein, the term "comprising" or "including" can be open-ended, semi-closed, and closed. In other words, the term also includes "consisting essentially of...", or "consisting of...".

[0051] Group Definition

[0052] In this specification, groups and their substituents can be selected by those skilled in the art to provide stable structural moieties and compounds. When a substituent is described by a conventional chemical formula written from left to right, the substituent also equally includes the chemically equivalent substituent obtained when writing the structural formula from right to left.

[0053] The section headings used in this specification are for the sole purpose of organizing the text and should not be construed as limiting the subject matter described. All documents or portions of documents cited in this invention, including but not limited to patents, patent applications, articles, books, manuals, and theses, are hereby incorporated by reference in their entirety.

[0054] Unless otherwise specified, all technical and scientific terms used herein have the standard meanings in the field to which the claimed subject matter pertains. If there are multiple definitions for a term, the definition herein shall prevail.

[0055] It should be understood that the singular forms used in this invention, such as "a", include plural referents unless otherwise specified.

[0056] Furthermore, the term "comprising" is an open-ended limitation and not a closed one, meaning it includes what is specified in this invention but does not exclude other aspects.

[0057] Unless otherwise indicated, the conventional methods of mass spectrometry and elemental analysis are employed in this invention, and the steps and conditions can refer to the conventional operating steps and conditions in the art.

[0058] Unless otherwise specified, standard nomenclature and standard laboratory procedures and techniques in analytical chemistry, organic synthetic chemistry, and optics are employed in this invention. In certain cases, standard techniques are used for chemical synthesis, chemical analysis, and the detection of the performance of light-emitting devices.

[0059] In this invention, unless otherwise specified, the number of "substitutions" can be one or more; when there are multiple ones, it means more than two, for example, it can be 2, 3, or 4. And when the number of "substitutions" is multiple, the "substitutions" can be the same or different. In this invention, the position of "substitution", if not specifically stated, can be arbitrary.

[0060] In the preparation method of the perovskite solar cell of this invention, when referring to the concentration range of substances, it means that the concentration of the said component can be any value within the said range. For example, 0.01 mg / ml to 5 mg / ml means it can be 0.01 mg / ml, 0.1 mg / ml, 1 mg / ml, 2 mg / ml, 3 mg / ml, 4 mg / ml, 5 mg / ml, etc.

[0061] In the preparation method of the perovskite solar cell of the present invention, a spin coating speed range is involved, indicating that the spin coating speed can be any value within the range. For example, it can be from 2000 rpm to 8000 rpm, which means it can be 2000 rpm, 3000 rpm, 4000 rpm, 5000 rpm, 6000 rpm, 7000 rpm, 8000 rpm, etc.

[0062] In the preparation method of the perovskite solar cell of the present invention, a time range is involved, indicating that the time range can be any value within the range. For example, it can be from 10 s to 50 s, which means it can be 10 s, 20 s, 30 s, 40 s, 50 s, etc. 5 min to 30 min means it can be 5 min, 10 min, 15 min, 20 min, 25 min, 30 min, etc., and so on.

[0063] In the preparation method of the perovskite solar cell of the present invention, a temperature range is involved, indicating that the temperature can be any value within the range. For example, it can be from 80 °C to 120 °C, which means it can be 80 °C, 90 °C, 100 °C, 110 °C, 120 °C, etc.

[0064] On the basis of not violating the common knowledge in the art, the above preferred conditions can be combined arbitrarily to obtain various preferred examples of the present invention.

[0065] The reagents and raw materials used in the present invention are all commercially available.

[0066] The beneficial effects that the present invention can achieve:

[0067] In the present invention, a SAM material and a sulfonamide compound are provided in the hole transport layer. The amino group of the sulfonamide compound can form an ionic bond with the acidic group in the SAM material that is not fully anchored, thereby enhancing the anchoring effect of the SAM material on the transparent conductive substrate through electrostatic interaction. Thus, the SAM material anchored at unstable sites can be reduced, and further, the desorption of the SAM material by the strongly polar solvent of the perovskite precursor can be reduced. Furthermore, pinholes and leakage current can be reduced, and further, the influence of pinholes and leakage current on the efficiency and stability of the battery can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following briefly introduces the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on the structures shown in these drawings without creative efforts.

[0069] Figure 1Surface potential maps measured before and after washing the SAM layer treated with sulfadiazine in Example 1 with a perovskite solvent (DMF:DMSO = 4:1);

[0070] Figure 2 Surface potential maps measured before and after washing the SAM layer not treated with sulfadiazine in the comparative example with a perovskite solvent (DMF:DMSO = 4:1);

[0071] Figure 3 X-ray diffraction test diagrams of the perovskite thin films in Example 1 and the comparative example;

[0072] Figure 4 Diagrams obtained by performing photoluminescence tests on the perovskite thin films in Example 1 and the comparative example;

[0073] Figure 5 Energy conversion efficiency diagrams of the inverted perovskite solar cells in Example 1 and the comparative example over time;

[0074] Figure 6 Current density-voltage curve diagrams of Example 1 and the comparative example;

[0075] Figure 7 Comparison diagram of the open-circuit voltages tested in the comparative example, Example 1, and Example 2;

[0076] Figure 8 Comparison diagram of the short-circuit current densities tested in the comparative example, Example 1, and Example 2;

[0077] Figure 9 Comparison diagram of the fill factors tested in the comparative example, Example 1, and Example 2;

[0078] Figure 10 Comparison diagram of the photoelectric conversion efficiencies tested in the comparative example, Example 1, and Example 2;

[0079] Figure 11 Structural schematic diagram of an embodiment of the inverted perovskite solar cell of the present invention;

[0080] Figure 12 Schematic diagram of an embodiment of an electronic device of the present invention.

[0081] The realization, functional features, and advantages of the object of the present invention will be further described in conjunction with the embodiments with reference to the accompanying drawings.

[0082] Symbol description:

[0083] 10. Transparent conductive substrate; 20. Hole transport layer; 21. SAM layer; 22. Sulfonamide compound layer; 30. Perovskite layer; 40. Electron transport layer; 50. Electrode layer; 100. Transverse perovskite solar cell; 1000. Electronic device; 300. Electronic device. Detailed implementation manners

[0084] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0085] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0086] In the present invention, descriptions such as "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between various embodiments may be combined with each other, but it must be based on the fact that those of ordinary skill in the art can implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the protection scope required by the present invention.

[0087] In a transverse perovskite solar cell, SAM (Self-Assembled Monolayer) material is a key interfacial material widely used in perovskite solar cells. The application of SAM material has greatly improved the energy conversion efficiency. In particular, phosphonic acid-based self-assembled molecules are widely used in the hole transport layer due to their low cost and excellent optoelectronic properties. However, due to the inherent amphiphilicity of SAM, it tends to aggregate during the deposition process on conductive glass. This aggregation prevents the formation of a uniform monolayer on the substrate, resulting in the formation of weak bonds through physical adsorption at some unstable sites rather than strong chemical bonds. SAM anchored at unstable sites will be desorbed by the strongly polar solvent of the perovskite precursor, causing an increase in pinholes and leakage current, and ultimately affecting the efficiency and stability of the battery. The influence of such an inhomogeneous interfacial layer is more obvious during the preparation of large-area perovskite solar cells.

[0088] The specific structure of the transverse perovskite solar cell proposed by the present invention will be described in the following specific embodiments:

[0089] As Figure 11As shown, in an embodiment of the perovskite solar cell 100 of the present invention, the perovskite solar cell 100 includes a transparent conductive substrate 10, a hole transport layer 20, a perovskite layer 30, an electron transport layer 40, and a top electrode layer 50. The hole transport layer 20 is disposed on the transparent conductive substrate 10 and is used for transporting holes. The perovskite layer 30 is disposed on the hole transport layer 20 and is used for photoelectric conversion. The electron transport layer 40 is disposed on the perovskite layer 30 and is used for transporting electrons. The top electrode layer 50 is disposed on the electron transport layer 40 and is used for collecting electrons. Among them, the hole transport layer 20 is provided with a SAM material and a sulfonamide compound. The SAM material has an acidic group. The general formula of the sulfonamide compound is: H2N-C6H4-SO2NH-R, where R is a hydrogen atom or an organic group.

[0090] The transparent conductive substrate 10 has both light-transmitting and conductive functions. It can be made of FTO (fluorine-doped tin oxide) glass, or ITO (indium-doped tin oxide) glass, or other effective materials. The hole transport layer 20 is provided with a SAM material and a sulfonamide compound. It should be noted that the SAM material can be MeO-2PACz (methoxy-functionalized carbazole), or Me-4PACz (4-(3,6-dimethyl-9H-carbazol-9-yl)butylphosphonic acid), or other effective materials.

[0091] The general formula of the sulfonamide compound is: H2N-C6H4-SO2NH-R. Among them, R is a hydrogen atom or an organic group. The sulfonamide compound can be one of sulfanilamide, sulfapyridine, sulfadiazine, sulfadiazine sodium, sulfamethazine, sulfamethazine sodium, sulfathiazole, sulfisoxazole, sulfamethoxazole. In other embodiments, it can also be other effective sulfonamide compounds. It should be noted that in one embodiment, the sulfonamide compound can be mixed in the SAM material; in another embodiment, the SAM material can be one layer, and the sulfonamide compound can be another layer, and the sulfonamide compound layer 22 is stacked on the SAM material; in other embodiments, the sulfonamide compound can also be in contact with the SAM material in other ways. The perovskite layer 30 is used for absorbing photons and generating electron-hole pairs. It should be noted that the perovskite layer 30 can be made of CH3NH3PbI3 material; it can also be made of Cs 0.05 FA 0.9 MA 0.05 FA

[0092] Understandably, the hole transport layer 20 is provided with a SAM material and a sulfonamide compound. The amino group of the sulfonamide compound can form an ionic bond with the acidic group in the SAM material that is not fully anchored, thereby enhancing the anchoring effect of the SAM material on the transparent conductive substrate 10 through electrostatic interaction, reducing the SAM material anchored at unstable sites, further reducing the desorption of the SAM material by the strongly polar solvent of the perovskite precursor, further reducing pinholes and leakage current, and further reducing the impact of pinholes and leakage current on the efficiency and stability of the battery.

[0093] Specifically, the sulfonamide compound has an aniline group. Under certain conditions, the sulfonamide compound can react with the acidic group of the SAM material to form an ionic bond, thereby enhancing the anchoring effect of the SAM material on the transparent conductive substrate 10 through electrostatic interaction, reducing or eliminating the SAM anchored at unstable sites, further reducing or eliminating the desorption of the SAM by the strongly polar solvent of the perovskite precursor, further reducing or eliminating pinholes and leakage current, and further reducing or eliminating the impact on the efficiency and stability of the battery.

[0094] In some embodiments, the acidic group of the SAM material is a phosphonic acid group. The amino group in the sulfonamide compound can form an ionic bond with the phosphonic acid group in the SAM material that is not fully anchored through a proton transfer reaction, thereby enhancing the anchoring effect of the SAM material on the conductive glass substrate through electrostatic interaction.

[0095] In some embodiments, R in the sulfonamide compound has a pyridine group or a pyrimidine group. Understandably, the sulfonamide compound with a pyridine group or a pyrimidine group is relatively easy to prepare or purchase.

[0096] In some embodiments, the sulfonamide compound is one of sulfapyridine, sulfadiazine, sodium sulfadiazine, sulfamethazine, and sodium sulfamethazine. Using one of sulfapyridine, sulfadiazine, sodium sulfadiazine, sulfamethazine, and sodium sulfamethazine as the sulfonamide compound is relatively easy to prepare or purchase.

[0097] In some embodiments, the transparent conductive substrate 10 includes a substrate and fluorine-doped tin oxide. The fluorine-doped tin oxide is disposed on the substrate, and the hole transport layer 20 is disposed on the fluorine-doped tin oxide. Understandably, the fluorine-doped tin oxide has high transmittance and low contact resistance, which can improve the performance of the inverted perovskite solar cell 100.

[0098] In some embodiments, the perovskite layer 30 has metal ions. Understandably, the sulfonamide group and the azaarene group of the sulfonamide compound can interact with the uncoordinated metal ions in the perovskite layer 30, thereby passivating the defects at the bottom interface of the perovskite layer 30, optimizing the buried bottom interface, facilitating the uniform assembly of the SAM material on the transparent conductive substrate 10, enhancing the contact at the perovskite buried bottom interface, optimizing the crystallization of the perovskite, and further improving the performance of the inverted perovskite solar cell 100.

[0099] Furthermore, the sulfonamide compound has an aromatic ring. The aromaticity of the aromatic ring helps to improve the overall stability of the molecule, thus making the metal chelation more firm.

[0100] In some embodiments, the material of the perovskite layer 30 has Pb 2+ . With such a setting, the sulfonamide group and the azaarene of the sulfonamide compound interact with the uncoordinated Pb 2+ in the perovskite layer 30, thereby passivating the defects at the bottom interface of the perovskite layer 30, optimizing the buried bottom interface, achieving the uniform assembly of the SAM layer 21 on the nickel-free transparent conductive substrate 10, enhancing the contact at the perovskite buried bottom interface, optimizing the crystallization of the perovskite, and further fabricating a high-performance perovskite solar cell.

[0101] Specifically, since there are a large number of lone electron pairs in the sulfonamide compound molecule, this is beneficial for forming a complex with the uncoordinated [PbI6] 4- cage; in this way, the π electrons of the sulfonamide group and the azaarene chelate with the uncoordinated Pb 2+ , indicating their ability to passivate defects at the buried interface. Furthermore, the sulfonamide compound has an aromatic ring. The aromaticity of the aromatic ring helps to improve the overall stability of the molecule, thus making the metal chelation more firm.

[0102] In some embodiments, the area of the perovskite layer 30 is greater than or equal to 1 cm 2 . Understandably, the inverted perovskite solar cell 100 of the present invention still maintains a high efficiency at an active area scale of 1 cm 2 or more. Specifically, the inverted perovskite solar cell 100 with an area of 1.035 cm 2 achieved an efficiency of 26.13% after being treated by the buried bottom interface molecular bridge strategy, and the inverted perovskite solar cell 100 with an area of 20.14 cm 2 achieved an efficiency of 22.94%, both of which are leading levels among inverted perovskite solar cells 100 of the same area at present. At the same time, the stability of the inverted perovskite solar cell 100 has also been improved after being treated by the buried bottom interface.

[0103] In some embodiments, the hole transport layer 20 does not contain nickel oxide. It can be understood that in the prior art, nickel oxide is added to the hole transport layer 20 to reduce the influence of the pinhole problem. However, due to the adverse reaction between the perovskite of the perovskite layer 30 and Ni of the nickel oxide, deep trap states will be introduced, thus limiting the efficiency and stability of the nickel oxide-based perovskite solar cell. However, the inverted perovskite solar cell 100 of the present invention on the transparent conductive substrate 10 without nickel oxide can not only reduce the influence of the pinhole problem, realize the uniform assembly of the SAM material, but also enhance the contact at the buried bottom interface of the perovskite layer 30, optimize the crystallization of the perovskite layer 30, and then prepare a high-performance inverted perovskite solar cell 100. 3+ Between them, an adverse reaction will introduce deep trap states, thus limiting the efficiency and stability of the nickel oxide-based perovskite solar cell. However, the inverted perovskite solar cell 100 of the present invention on the transparent conductive substrate 10 without nickel oxide can not only reduce the influence of the pinhole problem, realize the uniform assembly of the SAM material, but also enhance the contact at the buried bottom interface of the perovskite layer 30, optimize the crystallization of the perovskite layer 30, and then prepare a high-performance inverted perovskite solar cell 100.

[0104] In some embodiments, the sulfonamide compound is sulfanilamide.

[0105] In some embodiments, the sulfonamide compound is sulfadiazine.

[0106] In some embodiments, the sulfonamide compound is one of sulfathiazole, sulfisoxazole, and sulfamethoxazole.

[0107] In some embodiments, the sulfonamide compound is represented by sulfadiazine, which contains an amino group and can react with the phosphonic acid group in the SAM. Specifically, the sulfonamide compound is C 12 H 12 N4O2S, C 12 H 12 N4O2S and the C 20 H 23 N2O4P of the perovskite layer 30 react to obtain C 32 H 35 The reaction formula of N6O6PS is as follows:

[0108]

[0109] As Figure 11 Shown, in some embodiments, the hole transport layer 20 includes a SAM layer 21 and a sulfonamide compound layer 22. The SAM layer 21 is disposed on the transparent conductive substrate 10 and contains a SAM material. The sulfonamide compound layer 22 is sandwiched between the SAM layer 21 and the perovskite layer 30 and contains a sulfonamide compound.

[0110] It can be understood that by designing the SAM layer 21 and the sulfonamide compound layer 22 to form a stacked structure, on the one hand, the sulfonamide compound can form an ionic bond through a proton transfer reaction with the SAM layer 21. In this way, the anchoring of the SAM layer 21 on the FTO can be enhanced. This enhancement is attributed to the -PO3H- group obtaining a negative charge after proton transfer, resulting in a stronger electrostatic attraction to the positively charged positions (such as metal ions) on the FTO surface.

[0111] On the other hand, the group rich in lone pair electrons in the sulfonamide compound structure can chelate with the uncoordinated Pb at the perovskite bottom interface 2+ to passivate the defects at the bottom interface. In this way, by forming such a stacked structure, the SAM layer 21 and the perovskite layer 30 are connected simultaneously, promoting better interfacial contact at the bottom interface. This method enhances the stability of the SAM layer 21, induces better crystallization of the perovskite, adjusts the energy levels to make them more matched, and finally optimizes the performance of the inverted perovskite solar cell 100.

[0112] In some embodiments, in the hole transport layer 20, the SAM material and the sulfonamide compound are mixed with each other. Such a setting can simplify the process.

[0113] The present invention also provides a method for preparing an inverted perovskite solar cell 100, comprising the following steps:

[0114] (1) Prepare the SAM layer 21 on a conductive glass substrate;

[0115] (2) Prepare the sulfonamide compound layer 22 on the SAM layer 21;

[0116] (3) Prepare the perovskite layer 30 on the sulfonamide compound layer 22;

[0117] (4) Prepare the electron transport layer 40 on the perovskite layer 30;

[0118] (5) Prepare a metal electrode on the electron transport layer 40.

[0119] In some embodiments, in step (1), the conductive glass substrate is fluorine-doped tin oxide glass or indium-doped tin oxide glass.

[0120] In some embodiments, the SAM layer 21 in step (1) includes any one or a combination of Me-4PACz, Ph-4PACz ([4-(3,6-diphenyl-9H-carbazol-9-yl)butyl]phosphonic acid), DMAcPA, 4PADCB ([4-(7H-dibenzo[c,g]carbazol-7-yl)butyl]phosphonic acid).

[0121] Among them, the structural formula of DMAcPA is:

[0122] In some embodiments, in step (1), SAM is dissolved in ethanol or isopropanol, and the concentration after dissolution ranges from 0.01 mg / ml to 5 mg / ml, for example: 0.01 mg / ml, 0.1 mg / ml, 1 mg / ml, 2 mg / ml, 3 mg / ml, 4 mg / ml, 5 mg / ml, etc. Then it is spin-coated on the perovskite layer 30, and the spin-coating speed ranges from 2000 rpm to 8000 rpm, for example: 2000 rpm, 3000 rpm, 4000 rpm, 5000 rpm, 6000 rpm, 7000 rpm, 8000 rpm, etc. The spin-coating time ranges from 10 s to 50 s, for example: 10 s, 20 s, 30 s, 40 s, 50 s, etc. After spin-coating, annealing treatment is carried out, and the annealing temperature ranges from 80 °C to 120 °C, for example: 80 °C, 90 °C, 100 °C, 110 °C, 120 °C, etc. The annealing time ranges from 5 min to 30 min, for example: 5 min, 10 min, 15 min, 20 min, 25 min, 30 min, etc.

[0123] In some embodiments, in step (2), the sulfonamide compound is dissolved in any one of ethanol, isopropanol, DMF (N,N-dimethylformamide), DMSO (dimethyl sulfoxide), and the concentration after dissolution ranges from 0.01 mg / ml to 5 mg / ml, for example: 0.01 mg / ml, 0.1 mg / ml, 1 mg / ml, 2 mg / ml, 3 mg / ml, 4 mg / ml, 5 mg / ml, etc. Then it is spin-coated on the SAM layer 21, and the range of the spin-coating speed is from 2000 rpm to 8000 rpm, for example: 2000 rpm, 3000 rpm, 4000 rpm, 5000 rpm, 6000 rpm, 7000 rpm, 8000 rpm, etc. The spin-coating time ranges from 10 s to 50 s, for example: 10 s, 20 s, 30 s, 40 s, 50 s, etc. After spin-coating, annealing treatment is carried out, and the annealing temperature ranges from 80 °C to 120 °C, for example: 80 °C, 90 °C, 100 °C, 110 °C, 120 °C, etc. The annealing time ranges from 5 min to 30 min, for example: 5 min, 10 min, 15 min, 20 min, 25 min, 30 min, etc.

[0124] In some embodiments, in step (3), the perovskite layer 30 includes any one or a combination of more of methylammonium lead iodide, formamidinium lead iodide, methylammonium lead bromide, formamidinium lead bromide, cesium lead iodide, cesium lead bromide, methylammonium tin iodide, and methylammonium tin bromide.

[0125] In some embodiments, the preparation method of the sulfonamide compound layer 22 in step (3) is as follows: dissolve sulfadiazine in DMSO, spin-coat the fully dissolved solution on the SAM layer 21, and perform annealing treatment. Alternatively, dissolve Me-4PACz and sulfadiazine in ethanol, spin-coat the fully dissolved solution on the SAM layer 21, and perform annealing treatment.

[0126] In some embodiments, the electron transport layer 40 in step (4) includes any one or a combination of C 60 , PCBM. It should be noted that PCBM is a fullerene derivative, and its full name is [6,6]-phenyl-C61-butyric acid isomethyl ester.

[0127] In some embodiments, the electron transport layer 40 in step (4) includes a host sub-layer and a hole-blocking sub-layer. The host sub-layer is prepared on the perovskite layer 30 and is used for transporting electrons. The hole-blocking sub-layer is prepared on the host sub-layer and is used for blocking holes. The material of the hole-blocking sub-layer includes any one of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) and tin oxide. It can be understood that the main function of the hole-blocking sub-layer is to inhibit the reverse flow of holes to the electron transport side (such as the cathode), and at the same time allow efficient electron transport, thereby reducing charge recombination and improving charge collection efficiency.

[0128] In some embodiments, the metal electrode in step (5) includes any one of gold, silver, copper, and bismuth. It can be understood that using any one of gold, silver, copper, and bismuth for the metal electrode can endow the metal electrode with excellent electrical conductivity.

[0129] In some embodiments, the thickness range of the metal electrode in step (5) is from 50 nm to 300 nm. For example: 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 200 nm, 300 nm, etc. It can be understood that by setting the thickness range of the metal electrode to be from 50 nm to 300 nm, it can not only ensure that the metal electrode has a certain electrical conductivity, but also avoid the excessive thickness of the metal electrode from increasing the thickness of the inverted perovskite solar cell 100 too much.

[0130] As Figure 11 and Figure 12 shown, the present invention also provides an electronic device 1000, which includes an electronic device 300 and an inverted perovskite solar cell 100, and the electronic device 300 is electrically connected to the inverted perovskite solar cell 100. The specific structure of the inverted perovskite solar cell 100 refers to the above embodiments. Since the electronic device 1000 adopts all the technical solutions of the above all embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments, and will not be elaborated herein one by one.

[0131] The electronic device 300 can be, but is not limited to, an electronic calculator, an e - book reader, a wearable device, a camera, an electronic scale, etc.

[0132] It can be understood that by electrically connecting the electronic device 300 and the perovskite solar cell, the inverted perovskite solar cell 100 can supply power to the electronic device 300, so that the electronic device 1000 can be free from charging or reduce the number of charging times during its service life.

[0133] The present invention does not have special restrictions on the sources of all raw materials. Except as otherwise specified, they are all conventional products that can be obtained through commercial purchase.

[0134] Example 1:

[0135] Preparation method of the inverted perovskite solar cell:

[0136] S1. Prepare the perovskite precursor solution; weigh 1.8 moles / ml of Cs 0.05 FA 0.9 MA 0.05 PbI3 perovskite precursor solution and dissolve it in a mixed solution of N,N - dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). The ratio of DMF to DMSO is 4:1; stir at room temperature for 6 hours and filter with a 0.22 - micron PTFE filter head before use;

[0137] S2. Ultrasonically clean the fluorine - doped tin oxide (FTO) conductive glass substrate. Use deionized water containing dishwashing liquid, deionized water, isopropanol, and ethanol as cleaning agents for ultrasonic cleaning for 10 minutes respectively. Place the cleaned glass in an oven at 70 °C to dry;

[0138] S3. Place the dried fluorine - doped tin oxide (FTO) conductive glass substrate in an ultraviolet ozone cleaning machine for ozone treatment for 10 minutes;

[0139] S4. Prepare the SAM layer on the fluorine - doped tin oxide (FTO) conductive glass substrate by spin - coating method; dissolve Me - 4PACz in ethanol with a concentration of 0.5 mg / ml. Drop the fully dissolved solution onto the FTO, spin - coat at 5000 revolutions per minute for 30 seconds, and anneal on a constant - temperature hot plate at 100 °C for 10 minutes;

[0140] S5. Dissolve sulfadiazine in DMSO with a concentration of 1 mg / ml. Drop the fully dissolved solution onto the SAM substrate, spin - coat at 5000 revolutions per minute for 30 seconds, and anneal on a constant - temperature hot plate at 100 °C for 10 minutes;

[0141] S6. Anneal the prepared substrate and then cool it to room temperature, and prepare the perovskite layer; drop the perovskite precursor solution onto the substrate, spin-coat it at 4000 revolutions per minute for 50 seconds, and at the 7th second before the end of spin-coating, drop 150 μL of anisole, and perform annealing on a constant-temperature hot plate at 110 °C for 23 minutes;

[0142] S7. Cool the annealed perovskite film to room temperature, spin-coat a mixed passivation layer of PDAI2 and 3MTPAI (dissolved in isopropanol at 0.5 mg / mL and 1 mg / mL respectively) above the perovskite layer. After dropping the passivation layer onto the substrate, spin it at 5000 revolutions per minute and perform annealing on a constant-temperature hot plate at 100 °C for 5 minutes;

[0143] S8. In a nitrogen glove box, use thermal evaporation to deposit a layer of fullerene with a thickness of 25 nm above the substrate;

[0144] S9. Transfer the substrate with the deposited fullerene to an atomic layer deposition system and prepare a layer of tin oxide with a thickness of 20 nm;

[0145] S10. Transfer the substrate to a nitrogen glove box, expose the electrode area through a mask, and use thermal evaporation to deposit a layer of metallic silver with a thickness of 100 nm above the substrate as the electrode.

[0146] Example 2:

[0147] The preparation method of Example 2 is different from that of Example 1 in that:

[0148] Replace step S5 with: Dissolve 0.5 mg of Me-4PACz and 0.1 mg of sulfadiazine in 1 mL of ethanol, drop the fully dissolved solution onto the SAM substrate, spin-coat it at 5000 revolutions per minute for 30 seconds, and perform annealing on a constant-temperature hot plate at 100 °C for 10 minutes.

[0149] Except for the difference in step S5, the remaining processes of Example 2 are the same as those of Example 1.

[0150] Comparative Example:

[0151] To further compare the technical solutions of the present invention and the beneficial effects achieved thereby, a perovskite solar cell was prepared. The difference between the comparative example and Example 1 is that this comparative example omits step S5. The remaining processes are the same as those of Example 1.

[0152] Test:

[0153] Measure the surface potential before and after washing the SAM layer treated with sulfadiazine with a perovskite solvent (DMF:DMSO = 4:1), as Figure 1As shown. That is, in step S6 of Example 1, before dropping the perovskite precursor solution, the surface potential of the SAM layer is measured; after dropping the perovskite precursor solution, the surface potential of the SAM layer is measured again to obtain Figure 1 . Figure 1 In Figure 1 , FTO CPD refers to the surface potential of FTO in Example 1, SAM + SDZ CPD refers to the surface potential of the SAM layer before dropping the perovskite precursor solution in Example 1, and Wash CPD refers to the surface potential of the SAM layer after dropping the perovskite precursor solution in Example 1.

[0154] Before and after washing the SAM layer not treated with sulfadiazine with a perovskite solvent (DMF:DMSO = 4:1), the surface potential is measured respectively, as Figure 2 shown. That is, in step S6 of the comparative example, before dropping the perovskite precursor solution, the surface potential of the SAM layer is measured; after dropping the perovskite precursor solution, the surface potential of the SAM layer is measured again to obtain Figure 2 . Figure 2 In Figure 2 , FTO CPD refers to the surface potential of FTO in the comparative example, SAM CPD refers to the surface potential of the SAM layer before dropping the perovskite precursor solution in the comparative example, and Wash CPD refers to the surface potential of the SAM layer after dropping the perovskite precursor solution in the comparative example.

[0155] CPD (Contact Potential Difference) refers to the potential difference generated due to the work function difference when two materials are in contact, and is mainly used to characterize the surface electron energy level structure of materials, which has an important impact on interfacial charge transport and battery performance. From Figure 1 and Figure 2 , it can be seen that the surface potential of the SAM not treated with sulfadiazine in the comparative example increases rapidly after washing and is closer to FTO, indicating that a large amount of SAM is desorbed and removed by washing due to unstable anchoring, while the change in the surface potential of the SAM after treatment with sulfadiazine in Example 1 is greatly reduced after washing, which represents that sulfadiazine effectively enhances the self-assembled anchoring of SAM on the conductive glass substrate after treating SAM.

[0156] The perovskite films deposited in Example 1 on SAM treated with sulfadiazine and the perovskite films on SAM not treated with sulfadiazine in the comparative example are respectively subjected to X-ray diffraction tests. As Figure 3 shown, it is found that the diffraction peaks of the perovskite film deposited on the SAM treated with sulfadiazine are significantly stronger with respect to the (110) peak plane as a reference, indicating that the treatment of SAM with sulfadiazine realizes the control of the crystallization orientation and improves the crystallization. It should be noted that in the X-ray diffraction (XRD) test, the (110) peak plane refers to the diffraction peak caused by the (110) crystal plane in the crystal.

[0157] The perovskite films deposited in Example 1 on the SAM treated with sulfadiazine and the perovskite films in the comparative example not treated with sulfadiazine on the SAM were respectively subjected to photoluminescence tests. As Figure 4 shown, it was found that the perovskite film on the SAM treated with sulfadiazine had a higher luminescence intensity than the perovskite film on the SAM not treated with sulfadiazine, indicating that the treatment with sulfadiazine improved the crystallization quality of the perovskite film and reduced non-radiative recombination, which represented a reduction in the defect density in the perovskite film.

[0158] The inverted perovskite solar cells of Example 1 and the inverted perovskite solar cells of the comparative example were stored in a glove box filled with high-temperature nitrogen at 85 °C in the dark. The energy conversion efficiency was measured every 24 h, 48 h, 72 h, 96 h, 144 h, 192 h, 240 h, 360 h, 480 h, and 600 h, and a graph was plotted for comparison, as shown in Figure 5 . The test results showed that after 600 hours of storage, the energy conversion efficiency of the perovskite solar cells of Example 1 remained above 90%, while the energy conversion efficiency of the perovskite solar cells of the comparative example had decreased to 81.7% of the initial efficiency. This indicated that the stability of Example 1 was higher than that of the comparative example. This result demonstrated that the method of treating the SAM layer with sulfadiazine could improve the stability of inverted perovskite solar cells.

[0159] The test method and experimental conditions for the current density-voltage (J-V) curve of the inverted perovskite solar cell are as follows:

[0160] Under standard conditions: the light intensity was 1000 W / m 2 , a linear bias voltage was applied using a solar simulator and a high-precision source meter, and the current density was recorded. Key parameters such as the short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and photoelectric conversion efficiency (PCE) could be extracted from the J-V curve.

[0161] The following parameters can be extracted from the J-V curve:

[0162] Short-circuit current density (Jsc): the current density when the voltage is 0, reflecting the light absorption and carrier collection efficiency.

[0163] Open-circuit voltage (Voc): the voltage when the current is 0.

[0164] Fill factor (FF): reflected by the ratio of the maximum power point to the theoretical power.

[0165] Photoelectric conversion efficiency (PCE): calculated by the formula .

[0166] For the inverted perovskite solar cells fabricated in Example 1, Example 2 and the comparative example, the current density-voltage curves were respectively tested, and the open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE) were obtained.

[0167] Figure 6 Figure 4 is the current density-voltage curve graph of Example 1 and the comparative example. The test results show that the open-circuit voltage, short-circuit current, fill factor, and power conversion efficiency of the inverted perovskite solar cell treated with sulfadiazine in Example 1 are significantly improved compared with the inverted perovskite solar cell without sulfadiazine treatment in the comparative example. Among them, the power conversion efficiency of the 1 cm 2 device is increased from 23.90% to 26.13%. Combining the above Figures 1 to 5 , this indicates that the buried interface quality of the perovskite layer and the perovskite crystallization quality are significantly improved after the treatment with sulfadiazine, and the performance of the perovskite solar cell is enhanced.

[0168] Figure 7 Figure 5 is the comparison graph of the open-circuit voltages tested for the comparative example, Example 1, and Example 2; Figure 8 Figure 6 is the comparison graph of the short-circuit current densities tested for the comparative example, Example 1, and Example 2; Figure 9 Figure 7 is the comparison graph of the fill factors tested for the comparative example, Example 1, and Example 2; Figure 10 Figure 8 is the comparison graph of the photoelectric conversion efficiencies tested for the comparative example, Example 1, and Example 2. It can be seen from Figures 7 to 10 Figure 8 that for the four parameters of open-circuit voltage, short-circuit current density, fill factor, and photoelectric conversion efficiency, those of Example 1 are better than those of Example 2, and those of Example 2 are better than those of the comparative example. This indicates that the inverted perovskite solar cell obtained by the method of laminating sulfadiazine on the SAM in Example 1 is superior to the inverted perovskite solar cell obtained by the method of mixing sulfadiazine and SAM in Example 2. Moreover, the inverted perovskite solar cells obtained by the treatment with sulfadiazine in Example 1 and Example 2 are both superior to the inverted perovskite solar cell obtained without sulfadiazine treatment in the comparative example.

[0169] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention accordingly. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that, Comprising: A transparent conductive substrate; A hole transport layer, disposed on the transparent conductive substrate and used for transporting holes; A perovskite layer, disposed on the hole transport layer and used for photoelectric conversion; An electron transport layer, disposed on the perovskite layer and used for transporting electrons; and A top electrode layer, disposed on the electron transport layer and used for collecting electrons; Wherein, the hole transport layer is provided with a SAM material and a sulfonamide compound, the SAM material has an acidic group, and the general formula of the sulfonamide compound is: H2N-C6H4-SO2NH-R, where R is a hydrogen atom or an organic group.

2. The perovskite solar cell according to claim 1, characterized in that, The acidic group of the SAM material is a phosphonic acid group.

3. The perovskite solar cell according to claim 1, wherein R has a pyridine group or a pyrimidine group.

4. The perovskite solar cell according to claim 3, characterized in that, The sulfonamide compound is one of sulfapyridine, sulfadiazine, sodium sulfadiazine, sulfamethazine, and sodium sulfamethazine.

5. The perovskite solar cell according to claim 1, characterized in that, The transparent conductive substrate includes a substrate and fluorine-doped tin oxide, the fluorine-doped tin oxide is disposed on the substrate, and the hole transport layer is disposed on the fluorine-doped tin oxide; Preferably, the perovskite layer has metal ions; Preferably, the material of the perovskite layer contains Pb 2+ ; Preferably, the area of the perovskite layer is greater than or equal to 1 cm 2 ; Preferably, the hole transport layer does not contain nickel oxide; Preferably, the sulfonamide compound is sulfanilamide; Preferably, the sulfonamide compound is sulfadiazine; Preferably, the sulfonamide compound is one of sulfathiazole, sulfisoxazole, and sulfamethoxazole.

6. The perovskite solar cell according to claim 1, characterized in that, The sulfonamide compound is C 12 H 12 N4O2S, C 12 H 12 N4O2S and C of the perovskite layer 20 H 23 N2O4P react to obtain C 32 H 35 The reaction formula of N6O6PS is as follows:

7. The perovskite solar cell according to claim 1, wherein The hole transport layer includes: A SAM layer, disposed on the transparent conductive substrate and containing the SAM material; and A sulfonamide compound layer, sandwiched between the SAM layer and the perovskite layer and containing the sulfonamide compound.

8. The perovskite solar cell according to claim 1, wherein In the hole transport layer, the SAM material and the sulfonamide compound are mixed with each other.

9. A method for preparing a perovskite solar cell according to any one of claims 1 to 6, characterized in that, Including the following steps: (1) Preparing a SAM layer on a conductive glass substrate; (2) Preparing a sulfonamide compound layer on the SAM layer; (3) Preparing a perovskite layer on the sulfonamide compound layer; (4) Preparing an electron transport layer on the perovskite layer; (5) Preparing a metal electrode on the electron transport layer.

10. The preparation method according to claim 9, characterized in that, The conductive glass substrate in step (1) is fluorine-doped tin oxide glass or indium-doped tin oxide glass; Preferably, the SAM layer in step (1) includes any one or a combination of Me-4PACz, Ph-4PACz, DMAcPA, and 4PADCB; Preferably, in step (1), the SAM is dissolved in ethanol or isopropanol, and the concentration range after dissolution is 0.01 mg / ml to 5 mg / ml; then it is spin-coated on the perovskite layer, the spin-coating speed range is 2000 rpm to 8000 rpm, and the spin-coating time range is 10 s to 50 s; after spin-coating, annealing treatment is performed, and the annealing temperature range is 80 °C to 120 °C, and the annealing time range is 5 min to 30 min; Preferably, in step (2), the sulfonamide compound is dissolved in any one of ethanol, isopropyl alcohol, DMF, and DMSO, and the concentration after dissolution ranges from 0.01 mg / ml to 5 mg / ml; then it is spin-coated on the SAM layer, the spin-coating speed ranges from 2000 rpm to 8000 rpm, and the spin-coating time ranges from 10 s to 50 s; after spin-coating, annealing treatment is carried out, the annealing temperature ranges from 80 °C to 120 °C, and the annealing time ranges from 5 min to 30 min; Preferably, in step (3), the perovskite layer includes any one or a combination of methylammonium lead iodide, formamidinium lead iodide, methylammonium lead bromide, formamidinium lead bromide, cesium lead iodide, cesium lead bromide, methylammonium tin iodide, and methylammonium tin bromide; Preferably, in step (3), the preparation method of the sulfonamide compound layer is as follows: Dissolve sulfadiazine in DMSO, spin-coat the fully dissolved solution on the SAM layer, and perform annealing treatment; Alternatively, dissolve Me-4PACz and sulfadiazine in ethanol, spin-coat the fully dissolved solution on the SAM layer, and perform annealing treatment; Preferably, the electron transport layer described in step (4) includes C 60 , any one or a combination of more of PCBM; Preferably, in step (4), the electron transport layer includes a main body sub-layer and a hole blocking sub-layer. The main body sub-layer is prepared on the perovskite layer and is used for transporting electrons; the hole blocking sub-layer is prepared on the main body sub-layer and is used for blocking holes; the hole blocking sub-layer includes any one of BCP and tin oxide; Preferably, in step (5), the metal electrode includes any one of gold, silver, copper, and bismuth; Preferably, in step (5), the thickness range of the metal electrode is from 50 nm to 300 nm.

11. An electronic device, characterized in that, An electronic device and a perovskite solar cell as claimed in any one of claims 1 to 8, wherein the electronic device is electrically connected to the perovskite solar cell.

Images