Light-emitting substrate, manufacturing method thereof and display device

Abstract

According to the light-emitting substrate, the manufacturing method thereof and the display device, a first electrode, an inorganic insulating layer and a second electrode of the light-emitting substrate are stacked in sequence, and the second electrode is electrically connected with the first electrode through a first via hole penetrating through the inorganic insulating layer; the inorganic insulating layer comprises a first sub-part and a second sub-part which are arranged in the direction perpendicular to the substrate, and the second sub-part is located on the side, away from the substrate, of the first sub-part; the first sub-part is provided with a first slope surrounding the first via hole, and the second sub-part is provided with a second slope surrounding the first via hole; the first electrode is provided with a covering part which is not exposed by the first via hole, the covering part of the first electrode is provided with an upper surface far away from the substrate, a first included angle is formed between the surface where the first slope is located and the upper surface of the covering part, and a second included angle is formed between the surface where the second slope is located and the upper surface of the covering part; the second included angle is larger than the first included angle; the first electrode and the second electrode of the electric connection structure provide electric signals for driving the light-emitting device to emit light for the light-emitting device.

Description

Light-emitting substrate, manufacturing method thereof, and display device

[0001] This application claims priority to PCT patent application No. PCT / CN2023 / 135033 filed on November 29, 2023 and priority to PCT patent application No. PCT / CN2023 / 143434 filed on December 29, 2023. The contents of the above PCT patent application disclosures are hereby incorporated by reference in their entirety as part of this application. Technical Field

[0002] At least one embodiment of the present disclosure relates to a light-emitting substrate, a manufacturing method thereof, and a display device. Background Art

[0003] LED (light-emitting diode) has the advantages of low cost, high luminous efficiency, energy saving and environmental protection, and is widely used in lighting, visible light communication, luminous display and other scenarios.

[0004] One development direction of LED is towards miniaturization and micronization. After miniaturization, LED forms an array with millimeter or even micron spacing, which can achieve ultra-high resolution, so that it can be more widely used in fields such as information display.

[0005] Currently, small-sized flip-chip LED chips are widely used in backlight displays and RGB display devices. Currently, display products on the market often utilize thousands or tens of thousands of flip-chip LED chips with a single light-emitting unit, or two light-emitting units connected in series, mounted upside down on a circuit substrate. The smaller the chip size, the closer the distance between the chips, resulting in a higher contrast display.

[0006] In a miniaturized LED light-emitting panel, a single metal layer can be used to electrically connect to the LED to provide a light-emitting signal to the LED, or a double metal layer can be used to electrically connect to the LED to provide a light-emitting signal to the LED, the first metal layer in the double metal layer is electrically connected to the circuit board in the binding region, and the second metal layer in the double metal layer is overlapped with the first metal layer through vias to be electrically connected to the first metal layer. Compared with the single metal layer method, the double metal layer method facilitates layered wiring, and the wiring flexibility and diversity are higher, so more partitions can be achieved, thereby achieving more detailed control of the light-emitting substrate. However, it is necessary to ensure the reliability of the double metal layers overlapping each other through vias.

[0007] Summary of the Invention

[0008] At least one embodiment of the present disclosure provides a light-emitting substrate, which includes: a base substrate, a light-emitting device and an electrical connection structure. The base substrate has a main surface, and includes the light-emitting substrate including a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; the light-emitting device is arranged on the main surface of the base substrate and located in the light-emitting area; the electrical connection structure includes: a first electrode, an inorganic insulating layer and a second electrode. The first electrode is located on the main surface of the base substrate; the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate, and is located on the side of the first electrode away from the main surface of the base substrate, and the inorganic insulating layer includes a first via hole exposing the first electrode; the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, and is located on the side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on the side of the first sub-portion away from the base substrate; the first sub-portion has a first electrode surrounding the first The first via hole has a first slope surface, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion that is not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the substrate, and a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, and a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the electrical connection structure includes a first electrical connection structure, the first electrical connection structure has the first electrode and the second electrode, and the first electrode and the second electrode of the first electrical connection structure are configured to provide the light-emitting device with an electrical signal for driving the light-emitting device to emit light.

[0009] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the second sub-portion in the vertical direction is smaller than the thickness of the first sub-portion in the vertical direction.

[0010] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the ratio of the thickness of the second sub-portion in the vertical direction to the thickness of the inorganic insulating layer in the vertical direction is less than or equal to 1 / 3.

[0011] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes: a first sub-inorganic insulating layer and a second sub-inorganic insulating layer stacked on each other in the vertical direction, the second sub-inorganic insulating layer is located on the side of the first sub-inorganic insulating layer away from the base substrate, and the first via hole penetrates the first sub-inorganic insulating layer and the second sub-inorganic insulating layer; the second sub-inorganic insulating layer includes an upper part and a lower part, the lower part is in contact with the first sub-inorganic insulating layer, the upper part is located on the side of the lower part away from the first sub-inorganic insulating layer, the upper part serves as the second sub-part, and the lower part and the first sub-inorganic insulating layer form a whole as the first sub-part.

[0012] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting substrate also includes: a first organic insulating layer, the first organic insulating layer is located between the first sub-inorganic insulating layer and the second sub-inorganic insulating layer, and includes a second via; the orthographic projection of the first via on the base substrate is within the range of the orthographic projection of the second via on the base substrate, the first organic insulating layer has an upper surface away from the base substrate and a side surface facing the first via, and the second sub-inorganic insulating layer covers the upper surface and side surface of the first organic insulating layer; the portion of the first sub-inorganic insulating layer close to the first via includes a first edge portion exposed by the second via, the portion of the second sub-inorganic insulating layer covering the side surface of the first organic insulating layer is a second edge portion, the second edge portion also covers the first edge portion and is in contact with the first edge portion, and the first edge portion and the second edge portion constitute a whole including the first slope surface and the second slope surface.

[0013] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the first angle is the slope angle of the first slope surface, and the second angle is the slope angle of the second slope surface; the first slope surface includes the junction position of the first edge portion and the second edge portion, and the slope angle of the first slope surface at the junction position is the same as the slope angle of the entire first slope surface.

[0014] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the first angle ranges from 15° to 30°, and the second angle ranges from 50° to 80°.

[0015] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the portion of the second electrode located in the first via hole has a lower surface and a side surface; the lower surface of the second electrode is in contact with the first electrode and there are no bubbles, gaps or impurities between the lower surface of the second electrode and the first electrode; the side surface of the second electrode is in contact with the first slope surface and the second slope surface and there are no bubbles, gaps or impurities between the lower surface of the second electrode and the first slope surface.

[0016] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the material of the inorganic insulating layer includes at least one of silicon nitride, silicon oxide, and silicon oxynitride, and the material of the first electrode and the second electrode are both copper.

[0017] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device includes a first electrode pin and a second electrode pin; the light-emitting substrate also includes a circuit board located in the non-light-emitting area, the first electrode of the first electrical connection structure is electrically connected to the circuit board to receive a power signal from the circuit board, the second electrode of the first electrical connection structure is electrically connected to the first electrode pin of the light-emitting device to provide the power signal to the light-emitting device, and the power signal is the electrical signal used to drive the light-emitting device to emit light.

[0018] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting substrate includes a first conductive layer and a second conductive layer, the first conductive layer includes the first electrode, and the second conductive layer includes the second electrode; the light-emitting substrate also includes a driving circuit, and the driving circuit is at least partially located in the light-emitting area; the second conductive layer also includes a connecting electrode, the first end of the connecting electrode is electrically connected to the driving circuit, and the second end of the connecting electrode is electrically connected to the second electrode pin of the light-emitting device to provide a light-emitting driving signal to the light-emitting device, and the light-emitting device emits light under the drive of the power supply signal and the light-emitting driving signal.

[0019] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting substrate includes a plurality of the electrical connection structures, the plurality of electrical connection structures also include a second electrical connection structure, the second electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the light-emitting substrate also includes a driving circuit, the driving circuit is at least partially located in the light-emitting area, the light-emitting substrate includes a light-emitting array, the light-emitting array includes a plurality of light-emitting units arranged in an array, each of the light-emitting units includes a plurality of the light-emitting devices, and the driving circuit is provided corresponding to each light-emitting unit to control the light-emitting condition of the light-emitting device of the light-emitting unit; the plurality of light-emitting units of the light-emitting array include a first light-emitting unit and a second light-emitting unit located in the same column; the first electrode of the second electrical connection structure is connected to the circuit The board is electrically connected to receive a light-emitting control signal from the circuit board, the second electrode of the second electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the first light-emitting unit, and the light-emitting control signal includes a light-emitting driving signal for controlling the light-emitting state of the light-emitting device and / or a timing control signal for controlling the light-emitting device to emit light; the multiple electrical connection structures also include a third electrical connection structure, the third electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the second electrode of the third connection structure is electrically connected to the output end of the driving circuit corresponding to the first light-emitting unit, and the first electrode of the third electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the second light-emitting unit to provide the light-emitting control signal to the second light-emitting unit.

[0020] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the multiple electrical connection structures also include a fourth electrical connection structure, and the fourth electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the first electrode of the fourth electrical connection structure is grounded, and the second electrode of the fourth electrical connection structure is electrically connected to the ground signal input terminal of the driving circuit.

[0021] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device is a sub-millimeter light-emitting diode (Mini Light Emitting Diode, referred to as Mini LED) or a micro light-emitting diode (Micro Light Emitting Diode, referred to as Micro LED).

[0022] At least one embodiment of the present disclosure further provides a display device, comprising any one of the light-emitting substrates provided in the embodiments of the present disclosure. The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display drive signal to drive the light-emitting device to display an image; or the light-emitting substrate serves as a backlight source for the display device and is configured to provide light for display to the display substrate.

[0023] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; forming a first via hole penetrating the inorganic insulating layer, wherein the first via hole exposes the first electrode; and forming a second electrode, wherein the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole. The inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on the side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the base substrate, a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, and a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the electrical connection structure includes a first electrical connection structure, the first electrical connection structure has the first electrode and the second electrode, and the first electrode and the second electrode of the first electrical connection structure are configured to provide the light-emitting device with an electrical signal for driving the light-emitting device to emit light.

[0024] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, which includes: a method for manufacturing a light-emitting substrate, including: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, including: forming a first electrode on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; forming a first via hole penetrating the inorganic insulating layer, wherein the first via hole exposes the first electrode; forming a second electrode, wherein the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, and is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion being located on the side of the first sub-portion away from the One side of the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the base substrate, a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, and a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the forming of the inorganic insulating layer includes: forming an inorganic material layer, and dry etching the inorganic material layer, the dry etching treatment includes: in a first dry etching stage, dry etching the inorganic material layer under a first oxygen concentration condition; and in a second dry etching stage after the first dry etching stage, continuing to dry etch the inorganic material layer after the first dry etching stage under a second oxygen concentration condition, wherein the gases used in the first dry etching stage and the second dry etching stage both include oxygen, the oxygen concentration of the gas used in the first dry etching stage is the first oxygen concentration, and the oxygen concentration of the gas used in the second dry etching stage is the second oxygen concentration, and the first oxygen concentration is greater than the second oxygen concentration.

[0025] For example, in the manufacturing method of the light-emitting substrate provided in at least one embodiment of the present disclosure, the forming of the inorganic insulating layer includes: forming a first sub-inorganic material layer after forming the first electrode; forming an organic insulating layer, and forming a second via hole penetrating the organic insulating layer, wherein the orthographic projection of the first via hole on the base substrate is within the range of the orthographic projection of the second via hole on the base substrate, and the first organic insulating layer has an upper surface away from the base substrate and a side surface facing the first via hole; forming a second sub-inorganic material layer, wherein the second sub-inorganic material layer is stacked and in contact with the first sub-inorganic material layer in the vertical direction, and the first sub-inorganic material layer and the second sub-inorganic material layer constitute a whole as the inorganic material layer; and performing the dry etching process on the inorganic material layer composed of the first sub-inorganic material layer and the second sub-inorganic material layer, and the dry etching process includes the first dry etching stage and the second dry etching stage.

[0026] For example, in the method for manufacturing a light-emitting substrate provided in at least one embodiment of the present disclosure, in the first dry etching stage and the second dry etching stage, the gas used for dry etching includes oxygen and auxiliary gas, and the oxygen concentration is the ratio of the oxygen to the total amount of the oxygen and the auxiliary gas; the first oxygen concentration is 60% to 80%, and the second oxygen concentration is 8% to 25%.

[0027] For example, in the method for manufacturing a light-emitting substrate provided in at least one embodiment of the present disclosure, the duration of the second dry etching stage is shorter than the duration of the first dry etching stage.

[0028] For example, in the manufacturing method of the light-emitting substrate provided in at least one embodiment of the present disclosure, at the end of the first dry etching stage, the upper surface of the first electrode has not been exposed, and at this time, the second dry etching stage is entered; or, at the end of the first dry etching stage, the upper surface of the first electrode has just been exposed, and at this time, the second dry etching stage is entered.

[0029] At least one embodiment of the present disclosure provides a light-emitting substrate, which includes: a base substrate, a light-emitting device, and an electrical connection structure. The base substrate has a main surface, the light-emitting substrate includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; the light-emitting device is arranged on the main surface of the base substrate and located in the light-emitting area; the electrical connection structure includes a first electrode and an inorganic insulating layer; the first electrode is located on the main surface of the base substrate; the inorganic insulating layer is stacked in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and a first gap exists between the inorganic insulating layer and the upper surface of the first electrode, and the width of the first gap is less than 0.2μm.

[0030] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the first gap is less than 0.1 μm.

[0031] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the first gap is less than 0.05 μm.

[0032] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the first electrode also has a side surface intersecting with the upper surface, the inorganic insulating layer covers the side surface of the first electrode, and the inorganic insulating layer also covers the side surface of the first electrode, and there is a second gap between the inorganic insulating layer and the side surface of the first electrode, and the width of the second gap is less than 0.2μm.

[0033] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the second gap is less than 0.1 μm.

[0034] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the width of the second gap is less than 0.05 μm.

[0035] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a top and a side, the top of the inorganic insulating layer covers the upper surface, the side of the inorganic insulating layer is connected to the top of the inorganic insulating layer and covers the side surface of the first electrode, the top of the inorganic insulating layer includes a main body and a protrusion, the main body covers the upper surface of the first electrode, and the protrusion extends from the main body along a horizontal direction parallel to the main surface of the base substrate and protrudes from the main body and the side surface.

[0036] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the inorganic insulating layer is within a preset range, and as the thickness of the inorganic insulating layer increases, the length of the protrusion in the horizontal direction becomes smaller.

[0037] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the preset range includes at least 1200 angstroms to 3500 angstroms.

[0038] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a top and a side, the top of the inorganic insulating layer covers the upper surface, and the side of the inorganic insulating layer is connected to the top of the inorganic insulating layer and covers the side surface of the first electrode; the inorganic insulating layer has a boundary portion located at the junction of the top and the side, the boundary portion corresponds to the edge of the first electrode away from the base substrate, the top and the side in the boundary portion are continuously connected, and the boundary portion is dense and has no cracks.

[0039] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the angle between the surface of the side portion and the main surface of the base substrate is 50° to 60°, and the thickness of the first electrode is 2.7 μm; or, the angle between the surface of the side portion and the main surface of the base substrate is 55° to 65°, and the thickness of the first electrode is 3.6 μm.

[0040] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure further includes: a buffer layer, the buffer layer and the first electrode are stacked in the vertical direction; the thickness range of the buffer layer is 2000 angstroms to 2800 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 3600 angstroms to 4500 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 4600 angstroms to 5400 angstroms, and the stress range of the buffer layer is -360 MPa to -440 MPa; or, the thickness range of the buffer layer is 5800 angstroms to 6200 angstroms, and the stress range of the buffer layer is less than -800 MPa.

[0041] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the first electrode is 1.8 μm to 3.6 μm.

[0042] For example, in the light-emitting substrate provided by at least one embodiment of the present disclosure, the inorganic insulating layer includes an edge portion, and the edge portion is stacked and in contact with the buffer layer in the vertical direction.

[0043] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the material of the inorganic insulating layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; the material of the buffer layer includes at least one of silicon nitride, silicon oxide or silicon oxynitride; and the material of the first electrode is copper.

[0044] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the base substrate is a glass substrate, and the glass substrate does not contain sodium (Na) or calcium (Ca) components.

[0045] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure also includes: a second electrode, which is stacked with the first electrode and the inorganic insulating layer in the vertical direction, and is located on the side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through a first via hole passing through the inorganic insulating layer.

[0046] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes: a first sub-inorganic insulating layer and a second sub-inorganic insulating layer stacked on each other in the vertical direction, the second sub-inorganic insulating layer is located on the side of the first sub-inorganic insulating layer away from the base substrate, and the first via passes through the first sub-inorganic insulating layer and the second sub-inorganic insulating layer.

[0047] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the thickness of the first sub-inorganic insulating layer is greater than 4000 angstroms.

[0048] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the electrical connection structure includes a first electrical connection structure, the first electrical connection structure having the first electrode and the second electrode, and the first electrode and the second electrode of the first electrical connection structure are configured to provide the light-emitting device with an electrical signal for driving the light-emitting device to emit light.

[0049] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device includes a first electrode pin and a second electrode pin; the light-emitting substrate also includes a circuit board located in the non-light-emitting area, the first electrode of the first electrical connection structure is electrically connected to the circuit board to receive a power signal from the circuit board, and the second electrode of the first electrical connection structure is electrically connected to the first electrode pin of the light-emitting device to provide the power signal to the light-emitting device, and the power signal is the electrical signal for driving the light-emitting device to emit light; the light-emitting substrate includes a first conductive layer and a second conductive layer, the first conductive layer includes the first electrode, and the second conductive layer includes the second electrode; the light-emitting substrate also includes a driving circuit, and the driving circuit is at least partially located in the light-emitting area; the second conductive layer also includes a connecting electrode, the first end of the connecting electrode is electrically connected to the driving circuit, and the second end of the connecting electrode is electrically connected to the second electrode pin of the light-emitting device to provide the light-emitting device with a light-emitting driving signal, and the light-emitting device emits light under the drive of the power signal and the light-emitting driving signal.

[0050] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, and the second sub-portion is located on the side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion that is not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the base substrate, a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the second sub-inorganic insulating layer includes an upper portion and a lower portion, the lower portion is in contact with the first sub-inorganic insulating layer, the upper portion is located on the side of the lower portion away from the first sub-inorganic insulating layer, the upper portion serves as the second sub-portion, and the lower portion and the first sub-inorganic insulating layer form a whole as the first sub-portion.

[0051] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the warping level of the base substrate is less than 0.1 mm.

[0052] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting substrate includes a plurality of the electrical connection structures, the plurality of the electrical connection structures further include a second electrical connection structure, the second electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the light-emitting substrate further includes a driving circuit, the driving circuit is at least partially located in the light-emitting area, the light-emitting substrate includes a light-emitting array, the light-emitting array includes a plurality of light-emitting units arranged in an array, each of the light-emitting units includes a plurality of the light-emitting devices, and the driving circuit is provided corresponding to each light-emitting unit to control the light-emitting condition of the light-emitting device of the light-emitting unit; the plurality of light-emitting units of the light-emitting array include a first light-emitting unit and a second light-emitting unit located in the same column; the first electrode of the second electrical connection structure and the circuit The board is electrically connected to receive a light-emitting control signal from the circuit board, the second electrode of the second electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the first light-emitting unit, and the light-emitting control signal includes a light-emitting driving signal for controlling the light-emitting state of the light-emitting device and / or a timing control signal for controlling the light-emitting device to emit light; the multiple electrical connection structures also include a third electrical connection structure, the third electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the second electrode of the third connection structure is electrically connected to the output end of the driving circuit corresponding to the first light-emitting unit, and the first electrode of the third electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the second light-emitting unit to provide the light-emitting control signal to the second light-emitting unit.

[0053] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the multiple electrical connection structures also include a fourth electrical connection structure, and the fourth electrical connection structure has a first electrode and a second electrode of the electrical connection structure; the first electrode of the fourth electrical connection structure is grounded, and the second electrode of the fourth electrical connection structure is electrically connected to the ground signal input terminal of the driving circuit.

[0054] For example, in the light-emitting substrate provided in at least one embodiment of the present disclosure, the light-emitting device is a sub-millimeter light-emitting diode or a micro light-emitting diode.

[0055] At least one embodiment of the present disclosure further provides a display device, comprising any one of the light-emitting substrates provided in the embodiments of the present disclosure. The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display drive signal to drive the light-emitting device to display an image; or the light-emitting substrate serves as a backlight source for the display device and is configured to provide light for display to the display substrate.

[0056] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode, wherein the first electrode is located on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer and the first electrode are stacked in a vertical direction perpendicular to the main surface of the base substrate, and are located on a side of the first electrode away from the main surface of the base substrate, wherein the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and the inorganic insulating layer is directly and tightly fitted to the upper surface of the first electrode.

[0057] For example, in the method for manufacturing a light-emitting substrate provided in at least one embodiment of the present disclosure, the inorganic insulating layer is formed by chemical vapor deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0059] FIG1 is a schematic structural diagram of a portion of a light-emitting substrate where film breakage is prone to occur;

[0060] FIG2 is a FIB slice diagram of a part of a light-emitting substrate where film fracture is likely to occur;

[0061] FIG3 is a microscopic image of local bubbling of a light-emitting substrate;

[0062] FIG4 is a TEM slice image of a light-emitting substrate showing local bubbling;

[0063] FIG5 is a schematic diagram of the overall structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0064] FIG6 is a plan view of an electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0065] FIG7 is a schematic cross-sectional view along line A1-A2 in FIG6 ;

[0066] FIG8 is another schematic cross-sectional view along line A1-A2 in FIG6 ;

[0067] FIG9A is a schematic diagram of an electrical connection structure located in a light-emitting region and a non-light-emitting region of a display substrate provided by an embodiment of the present disclosure;

[0068] FIG9B is a schematic diagram of a display device provided by at least one embodiment of the present disclosure;

[0069] 10A-10D are schematic diagrams of another method for manufacturing a light-emitting substrate provided in one embodiment of the present disclosure;

[0070] 11A-11C are schematic diagrams of another method for manufacturing a light-emitting substrate provided in one embodiment of the present disclosure;

[0071] 12A-12F are examples of products obtained by using different first and second oxygen concentrations according to the present disclosure;

[0072] FIG13 is a schematic diagram of a conductive structure of a light-emitting substrate with a gap between a metal electrode and an inorganic layer;

[0073] FIG14 is a schematic plan view of a local section of a conductive structure of a light-emitting substrate where bubbling occurs;

[0074] FIG15 is a cross-sectional view of a section taken along the dotted circle in FIG14 ;

[0075] FIG16 is an enlarged view of the position of the dotted circle in FIG15;

[0076] FIG17 is a cross-sectional view taken under a scanning electron microscope of an electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0077] FIG18 is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure;

[0078] FIG19 is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0079] FIG20 is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0080] FIG21 is a cross-sectional view taken under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure;

[0081] 22-23 are cross-sectional views under a scanning electron microscope of an electrical connection structure with different film layer parameters provided in one embodiment of the present disclosure. DETAILED DESCRIPTION

[0082] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. The embodiments described below are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0083] Unless otherwise defined, the technical or scientific terms used herein should have the usual meanings understood by persons of ordinary skill in the field to which the invention belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0084] Figure 1 is a schematic structural diagram of a portion of a light-emitting substrate where film fracture is prone to occur; Figure 2 is a FIB slice diagram of a portion of a light-emitting substrate where film fracture is prone to occur; Figure 3 is a microscopic image of a portion of a light-emitting substrate where blistering occurs; and Figure 4 is a TEM slice diagram of a portion of a light-emitting substrate where blistering occurs. In a miniaturized light-emitting diode (LED) light-emitting substrate, when a double metal layer is used to electrically connect to the LED to provide a light-emitting signal to the LED, referring to Figures 1 and 2, a buffer layer BUFFER is provided on the substrate BASE, and a double metal layer, an LED, a circuit board FPC, various interlayer insulating layers, and various signal lines are provided on the buffer layer BUFFER. The first metal layer M1 of the double metal layer is electrically connected to the circuit board FPC in the bonding region, and the second metal layer M2 of the double metal layer is overlapped with the first metal layer M1 through a via V0 to be electrically connected to the first metal layer M1. Typically, it is necessary to form an insulating layer PVX having a via V0 by dry etching at least one insulating layer material layer, and then form the second metal layer M2.

[0085] The inventors of this application discovered in their research that the sidewalls of the via V0 formed by dry etching the insulating material layer have a slope, and the second metal layer M2 covers the slope. When the oxygen content in the dry etching gas used for dry etching the insulating material layer is low, the slope angle will be larger, even reaching about 80°, which will make the second metal layer M2 prone to fracture at the slope, thereby leading to poor electrical performance and reliability risks. The position indicated by the dotted circle in Figure 1 is a schematic diagram of the slope where the second metal layer M2 is prone to fracture. The elliptical circle in Figure 2 contains the slope where the second metal layer M2 is prone to fracture. It can be seen from Figure 2 that the second metal layer M2 has cracks at this slope. The black line within the elliptical circle in Figure 2 is the cracked second metal layer M2, and the risk of the second metal layer M2 breaking is high. Moreover, when the oxygen content in the dry etching gas used for dry etching the insulating layer material layer is high, the slope angle of the side wall of the via V0 will be smaller, which is beneficial to reducing the risk of disconnection of the second metal layer M2 at the slope. However, after the insulating layer material layer is etched through, the first metal layer M1 at the via V0 will be exposed. After the exposed first metal layer M1 is attacked by the high oxygen atmosphere, the surface will be oxidized, which will lead to poor adhesion at the overlap between the first metal layer M1 and the second metal layer M2. In subsequent high-temperature processes (such as OC OVEN or reflow soldering process) or reliable high-temperature and high-humidity environments, poor bubbling will occur, that is, the second metal layer M2 will separate from the first metal layer M1, as shown in Figure 3. In Figure 3, the strip portion indicated by TP is the position where the second metal layer M2 and the first metal layer M1 overlap each other. There is a bubbling portion BUBBLE in the overlapping position, that is, bubbling occurs between the second metal layer M2 and the first metal layer M1. For example, the bubbling portion may include bubbles and may also include other impurities, that is, the portion where the two are separated from each other.

[0086] Therefore, how to reduce the risk of the second metal layer M2 breaking at the slope of the side wall of the via V0 while preventing bubbling between the first metal layer M1 and the second metal layer M2 is a difficult problem, and is of great significance for improving the reliability of the first metal layer M1 and the second metal layer M2 overlapping each other through the via V0, so as to improve the reliability of the light-emitting signal provided to the LED through the first metal layer M1 and the second metal layer M2, and ensure the production yield of the light-emitting substrate.

[0087] At least one embodiment of the present disclosure provides a light-emitting substrate, comprising: a base substrate, a light-emitting device, and an electrical connection structure. The base substrate has a main surface and includes a light-emitting region and a non-light-emitting region at least partially surrounding the light-emitting region; the light-emitting device is disposed on the main surface of the base substrate and located in the light-emitting region; and the electrical connection structure includes: a first electrode, an inorganic insulating layer, and a second electrode. A first electrode is located on the main surface of the base substrate; an inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate, and the inorganic insulating layer includes a first via hole exposing the first electrode; a second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction and is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on a side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion not exposed by the first via hole, the covering portion of the first electrode has an upper surface away from the base substrate, a first angle is formed between a surface where the first slope surface is located and the upper surface of the covering portion, and a second angle is formed between a surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle.

[0088] For example, the electrical connection structure includes a first electrical connection structure having the first electrode and the second electrode, and the first electrode and the second electrode of the first electrical connection structure are configured to provide the light emitting device with an electrical signal for driving the light emitting device to emit light.

[0089] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, the method comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; forming a first via hole penetrating the inorganic insulating layer, wherein the first via hole exposes the first electrode; forming a second electrode, wherein the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; the inorganic insulating layer includes a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion being located on a side of the first sub-portion away from the base substrate; The first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; the first electrode has a covering portion that is not exposed by the first via hole, and the covering portion of the first electrode has an upper surface away from the substrate, a first angle is formed between the surface where the first slope surface is located and the upper surface of the covering portion, and a second angle is formed between the surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; the forming of the inorganic insulating layer includes: forming an inorganic material layer, and dry etching the inorganic material layer, the dry etching treatment includes: in a first dry etching stage, dry etching the inorganic material layer under a first oxygen concentration condition; and in a second dry etching stage after the first dry etching stage, continuing to dry etch the inorganic material layer after the first dry etching stage under a second oxygen concentration condition, wherein the gases used in the first dry etching stage and the second dry etching stage both include oxygen, the oxygen concentration of the gas used in the first dry etching stage is the first oxygen concentration, and the oxygen concentration of the gas used in the second dry etching stage is the second oxygen concentration, and the first oxygen concentration is greater than the second oxygen concentration.

[0090] For example, FIG5 is a schematic diagram of the overall structure of a light-emitting substrate provided in one embodiment of the present disclosure. Referring to FIG5 , the light-emitting substrate 10 provided in at least one embodiment of the present disclosure includes a base substrate 1, the base substrate 1 having a main surface, the light-emitting substrate 10 including a light-emitting region LR and a non-light-emitting region NLR at least partially surrounding the light-emitting region LR; a light-emitting unit PU is provided on the main surface of the base substrate 1, the light-emitting unit PU is located in the light-emitting region LR, and includes a light-emitting device. For example, each light-emitting unit PU includes a plurality of sub-light-emitting units, for example, the light-emitting substrate 10 includes a plurality of light-emitting units PU, and the plurality of light-emitting units PU are arranged in an array. For example, FIG5 takes an example in which a light-emitting unit PU includes four sub-light-emitting units, and the four sub-light-emitting units are respectively a first sub-light-emitting unit P1, a second sub-light-emitting unit P2, a third sub-light-emitting unit P3, and a fourth sub-light-emitting unit P4. Of course, it is not limited to four, and can also be less than or more than four, and can be designed according to specific needs.

[0091] Figure 6 is a schematic plan view of an electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure; Figure 7 is a schematic cross-sectional view taken along line A1-A2 in Figure 6 . Referring to Figures 5-7 , the light-emitting substrate 10 further includes an electrical connection structure 2 located on the main surface of the base substrate 1. For example, the electrical connection structure 2 may be located in the light-emitting region LR, or alternatively, in the non-light-emitting region NLR. The electrical connection structure 2 includes a first electrode 21, an inorganic insulating layer 3, and a second electrode 22. The inorganic insulating layer 3 is stacked with the first electrode 21 in a direction D1 perpendicular to the main surface of the base substrate 1 and is located on a side of the first electrode 21 away from the main surface of the base substrate 1. The inorganic insulating layer 3 includes a first via V1 that exposes the first electrode 21. The second electrode 22 is stacked with the first electrode 21 and the inorganic insulating layer 3 in a direction D1 perpendicular to the main surface of the base substrate 1 and is located on a side of the inorganic insulating layer 3 away from the main surface of the first electrode 21. The second electrode 22 is electrically connected to the first electrode 21 through the first via V1. The inorganic insulating layer 3 includes a first sub-portion 3a and a second sub-portion 3b arranged in a vertical direction D1, and the second sub-portion 3b is located on a side of the first sub-portion 3a away from the base substrate 1; the first sub-portion 3a has a first slope S1 surrounding the first via V1, and the second sub-portion 3b has a second slope S2 surrounding the first via V1; the first electrode 21 has a covering portion not exposed by the first via V1, and the covering portion of the first electrode 21 has an upper surface TS1 away from the base substrate 1, a first angle θ1 is formed between the surface where the first slope S1 is located and the upper surface TS1 of the covering portion, and a second angle θ2 is formed between the surface where the second slope S2 is located and the upper surface TS1 of the covering portion (represented in FIG. 7 by the angle between a dotted line parallel to the upper surface TS1 of the covering portion and the surface where the second slope S2 is located), and the second angle θ2 is greater than the first angle θ1. The first angle θ1 is the slope angle of the first slope S1, and the second angle θ2 is the slope angle of the second slope S2.As a result, the side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (i.e., the hole wall of the first via hole V1) presents a double-step morphology, avoiding the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the second electrode 22 from breaking at the hole wall of the first via hole V1, which causes poor electrical performance and poor reliability. In addition, the double-step morphology can be produced by two dry etching processes, the first dry etching process using an atmosphere with a high oxygen concentration, and the second dry etching process using an atmosphere with a low oxygen concentration. Therefore, not only can the double-step morphology structure solve the above-mentioned problem of the second electrode 22 being easily broken at the position of the side wall of the inorganic insulating layer 3 surrounding the first via hole V1, but the two dry etching processes can also prevent the first electrode 21 from being over-oxidized under a high oxygen concentration after being exposed to the first via hole V0, thereby solving the problem of poor bubbling between the second electrode 22 caused by this.

[0092] The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2 , and covers the entire first via hole V0 . The second electrode 22 has no breakage or cracks, and no other impurities are mixed in the cracks due to the cracks.

[0093] For example, referring to FIG7 , the thickness of the second sub-portion 3b in the vertical direction D1 is less than the thickness of the first sub-portion 3a in the vertical direction D1. Thus, the second sub-portion 3b corresponding to the second slope surface S2 having a larger slope angle has a smaller thickness, which facilitates the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2. Otherwise, even if the aforementioned bubbling problem is solved, the adhesion between the second electrode 22 and the entire sidewall (the entire slope surface) of the inorganic insulating layer 3 surrounding the first via V1 is not ideal, further effectively preventing the second electrode 22 from breaking at the hole wall of the first via V1, which could lead to poor electrical performance and reliability.

[0094] For example, referring to Figure 7, the thickness of the second sub-portion 3b in the vertical direction D1 accounts for a ratio of less than or equal to 1 / 3 of the thickness of the inorganic insulating layer 3 in the vertical direction D1. After experimental verification, it has been found that meeting this condition can better prevent the second electrode 22 from breaking at the wall of the first via hole V1, thereby obtaining higher electrical reliability.

[0095] For example, a buffer layer buffer is provided on the main surface of the substrate 1 , and the first electrode 21 , the second electrode 22 , the inorganic insulating layer 3 , etc. are all provided on the buffer layer buffer.

[0096] For example, the first angle θ1 ranges from 15° to 30°, and the second angle θ2 ranges from 50° to 80°. The inventors of this application have discovered that the magnitude of the first angle θ1 and the magnitude of the second angle θ2 have a significant impact on preventing the second electrode from breaking. After experimentation, they have found that within the above-mentioned angle range, a relatively stable and good effect can be achieved. The second angle θ2 cannot be too large, thereby facilitating the adhesion of the second electrode to the second slope surface forming the second angle and preventing the second electrode from breaking. In addition, the magnitude of the first angle θ1 should not be too small or too large. If the first angle θ1 is too small, for example, less than 15°, it will make it difficult to form the first slope surface forming the first angle. If the first angle is too large, for example, greater than 30°, when the above-mentioned two-step dry etching process is used to form the first slope surface and the second slope surface, the second angle will be even larger. This is not conducive to the adhesion of the second electrode to the first slope surface, nor is it conducive to the adhesion of the second electrode to the second slope surface, and the second electrode is prone to breaking at the first and second slope surfaces.

[0097] For example, referring to Figure 7, the portion of the second electrode 22 located in the first via V1 has a bottom surface and a side surface. The bottom surface of the second electrode 22 is in contact with the first electrode 21, with no bubbles, gaps, or impurities between the bottom surface and the first electrode 21. The side surface of the second electrode 22 is in contact with the first slope S1 and the second slope S2, with no bubbles, gaps, or impurities between the bottom surface and the first slope S1 and the second slope S2. "Impurities" here refer to substances formed during the manufacturing process other than the target layers of the first electrode 21, the second electrode 22, and the inorganic insulating layer 3.

[0098] As shown in Figure 7, the portion of the second electrode 22 covering the first slope surface S1 and the second slope surface S2 away from the surface of the substrate 1 has a slope, and the angle between the slope and the plane where the main surface of the substrate 1 is located is the slope angle of the second electrode 22. For example, the slope angle of the second electrode 22 is less than 90°, for example, 30° to 60°.

[0099] For example, the material of the inorganic insulating layer 3 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride; the material of the first electrode 21 and the second electrode 22 is a metal material, including a metal or alloy, such as copper. Copper is a preferred material for the conductive connection structure currently used in display substrates due to its good conductivity, ease of acquisition, and ease of fabrication. Alternatively, the material of the first electrode 21 and the second electrode 22 can be manganese, chromium, copper alloy, manganese alloy, etc. However, the materials of the first and second electrodes are not limited to the types listed above, and the present disclosed embodiments do not impose such restrictions.

[0100] Fig. 8 is another schematic cross-sectional view along line A1-A2 in Fig. 6. The embodiment shown in Fig. 8 differs from the embodiment shown in Fig. 7 in the following ways.

[0101] For example, referring to FIG8 , the inorganic insulating layer 3 includes a first sub-inorganic insulating layer 31 and a second sub-inorganic insulating layer 32 stacked one above the other in a vertical direction D1. The second sub-inorganic insulating layer 32 is located on a side of the first sub-inorganic insulating layer 31 away from the base substrate 1 . A first via V1 extends through the first and second sub-inorganic insulating layers 31 and 32 . The second sub-inorganic insulating layer 32 includes an upper portion 32 t and a lower portion 32 b . The lower portion 32 t contacts the first sub-inorganic insulating layer 31 . The upper portion 32 t is located on a side of the lower portion 32 b away from the first sub-inorganic insulating layer 31 . The upper portion 32 t serves as a second sub-portion having a second slope S2 , while the lower portion 32 b and the first sub-inorganic insulating layer 31 together serve as a first sub-portion having a first slope S1 . The dashed line l in FIG8 schematically represents the boundary between the upper portion 32 t and the lower portion 32 b . In the structure shown in Figure 8, the inorganic insulating layer 3 is composed of two sub-inorganic insulating layers. The side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (that is, the hole wall of the first via hole V1) also presents a double-step morphology. Similar to the technical effect shown in Figure 7, the embodiment shown in Figure 8 can also prevent the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 from being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the electrical and reliability problems caused by the breakage of the second electrode 22 at the hole wall of the first via hole V1. In addition, the double-step morphology can be produced by two dry etching processes. The first dry etching process uses an atmosphere with a high oxygen concentration, and the second dry etching process uses an atmosphere with a low oxygen concentration to solve the problem of poor bubbling between the second electrodes 22 caused by this.

[0102] For example, the first and second inorganic insulating layers 31 and 32 may be made of the same material. For example, the first and second inorganic insulating layers 31 and 32 may be made of at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0103] For example, referring to Figure 8, the light-emitting substrate 10 also includes a first organic insulating layer 4, which is located between the first sub-inorganic insulating layer 31 and the second sub-inorganic insulating layer 32, and includes a second via hole V2. The orthographic projection of the first via hole V1 on the base substrate 1 is within the range of the orthographic projection of the second via hole V2 on the base substrate 1. The first organic insulating layer 4 has an upper surface 41 away from the base substrate 1 and a side surface 42 facing the first via hole V1. The second sub-inorganic insulating layer 32 covers the upper surface 41 and the side surface 42 of the first organic insulating layer 4; the portion of the first sub-inorganic insulating layer 31 close to the first via hole V1 includes a first edge portion 31e exposed by the second via hole V2, and the portion of the second sub-inorganic insulating layer 32 covering the side surface 42 of the first organic insulating layer 4 is a second edge portion 32e. The second edge portion 32e also covers the first edge portion 31e and contacts the first edge portion 31e. The whole formed by the first edge portion 31e and the second edge portion 32e includes a first slope surface S1 and a second slope surface S2. Typically, after forming the first inorganic insulating layer 31, the first organic insulating layer 4 is formed, and then the second inorganic insulating layer 32 is formed. The second inorganic insulating layer 32 covers the first organic insulating layer 4, and the second edge portion 32e of the second inorganic insulating layer 32 wraps around the edge of the first organic insulating layer 4, thereby protecting the first organic insulating layer 4 from being etched during the subsequent dry etching process of the inorganic insulating layer 3 composed of the first inorganic insulating layer 31 and the second inorganic insulating layer 32. The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2. The second electrode 22 covers the entire first via hole V0, and the second electrode 22 has no breaks or cracks, and no impurities are contained in the cracks due to the cracks.

[0104] It should be noted that FIG8 is a cross-sectional view. In fact, the first edge portion 31e is in a ring shape surrounding the first via hole V1, for example, a closed ring shape surrounding the entire first via hole V1.

[0105] For example, referring to FIG8 , the first slope surface S1 includes the intersection of the first edge portion 31e and the second edge portion 32e. The slope angle of the first slope surface S1 at this intersection is the same as the slope angle of the entire first slope surface S1. That is, the entire first slope surface S1 has a smooth transition without abrupt changes at the intersection, which facilitates the adhesion and continuity of the second electrode 22 on the first slope surface S1.

[0106] Other features shown in FIG8 , such as the range of the first angle θ1, the range of the second angle θ2, the range of the slope angle of the second electrode 22 , etc., and the corresponding technical effects are the same as those of the embodiment shown in FIG7 , and reference may be made to the previous description, which will not be repeated here.

[0107] FIG9A is a schematic diagram of an electrical connection structure located in the light-emitting region and the non-light-emitting region of a display substrate provided in an embodiment of the present disclosure. For example, a portion of the electrical connection structure is located in the light-emitting region, and a portion of the electrical connection structure is located in the fan-out region of the non-light-emitting region. The position of the fan-out region is shown in FIG5 . The fan-out region can be bent to the non-light-emitting side of the light-emitting substrate, which is opposite to the light-emitting side. For any display substrate provided in an embodiment of the present application, the electrical connection structure shown in FIG9A can be the electrical connection structure shown in FIG7 or FIG8 .

[0108] Referring to Figure 9A , for example, each light-emitting device performing a light-emitting function includes a first electrode pin L1 and a second electrode pin L2. The positions of the first and second electrode pins L1, L2 of the light-emitting device are represented by two dashed boxes in Figure 9A , but the specific structure of the light-emitting device is not shown. For example, the light-emitting device can be relocated to the positions of the first and second electrode pins L1, L2, such as by flip-chip mounting. Referring to Figures 5 and 9A , the light-emitting substrate 10 also includes a circuit board (FPC) located in the non-light-emitting region NLR. For example, the FPC is a flexible circuit board, but is not limited to a flexible circuit board.

[0109] For example, the light-emitting substrate includes a plurality of electrical connection structures, each of which has the above-mentioned first electrode 21 and second electrode 22, for example, having the structure shown in Figure 7 or Figure 8. Four electrical connection structures are introduced below, namely the first electrical connection structure, the second electrical connection structure 02, the third electrical connection structure 03 and the fourth electrical connection structure. The positions and specific connection structures of these electrical connection structures are different to achieve different functions. These four electrical connection structures play an important role in the light-emitting substrate provided by the present invention. The problem of the above-mentioned second electrode being easily broken at the first slope surface and the second slope surface and the bubbling problem at these positions have a fatal impact on whether the light-emitting substrate can emit light and display normally. Therefore, solving the above-mentioned problems at these positions has a direct and significant impact on improving the light-emitting quality and display quality of the light-emitting substrate. Of course, the type and position of the electrical connection structure, the structure connected and the function achieved are not limited to these four types, as long as it has the structure shown in Figure 7 or Figure 8.

[0110] For example, the electrical connection structure 2 includes a first electrical connection structure 01 having the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from other electrical connection structures, in FIG9A , the first electrode of the first electrical connection structure 01 is labeled 211, and the second electrode of the first electrical connection structure 01 is labeled 221. The first and second electrodes 211 and 221 of the first electrical connection structure 01 are configured to provide an electrical signal to the light-emitting device for driving the light-emitting device to emit light.

[0111] Figure 9A shows four light-emitting devices LED1, LED2, LED3, and LED4 in a first light-emitting unit PU1. For each light-emitting device, the connection method of the first electrical connection structure 01 is the same. Light-emitting device LED1 is used as an example here. The first electrode 211 of the first electrical connection structure 01 is electrically connected to the printed circuit board (FPC) to receive a power signal from the FPC. The second electrode 221 of the first electrical connection structure 01 is electrically connected to the first electrode pin L1 of the light-emitting device LED1 to provide a power signal to the light-emitting device LED1. The power signal is an electrical signal used to drive the light-emitting device LED1 to emit light. The light-emitting device LED1 emits light in response to the power signal from the first electrode pin L1 and the light-emitting drive signal from the second electrode pin L2.

[0112] For example, the light-emitting substrate 10 includes a first conductive layer and a second conductive layer, the first conductive layer includes a first electrode of each electrical connection structure, and the second conductive layer includes a second electrode of each electrical connection structure; the light-emitting substrate 10 also includes a driving circuit IC, and the driving circuit IC is at least partially located in the light-emitting area LR; the light-emitting substrate includes a light-emitting array, the light-emitting array includes a plurality of light-emitting units arranged in an array, each light-emitting unit includes a plurality of light-emitting devices, and a driving circuit IC is provided corresponding to each light-emitting unit, and the driving circuit IC is configured to provide a light-emitting control signal to the light-emitting device of the corresponding light-emitting unit to control the light-emitting state of the light-emitting device of the light-emitting unit.

[0113] The second conductive layer also includes a connecting electrode CE, a first end of the connecting electrode CE is electrically connected to the driving circuit IC, and a second end of the connecting electrode CE is electrically connected to the second electrode pin L2 of the light-emitting device to provide a light-emitting drive signal to the light-emitting device, and the light-emitting device emits light under the drive of the power signal and the light-emitting drive signal. For example, the light-emitting substrate can be a backlight panel, which can be used as a backlight source of a display panel. Alternatively, the light-emitting substrate can also be a display substrate, and the light-emitting device emits light to perform a display function. For example, the light-emitting drive signal is used to control the light-emitting brightness of the light-emitting device. For example, in the display substrate, each light-emitting unit P is a pixel, each sub-light-emitting unit P1~P4 is a sub-pixel, each sub-pixel includes a light-emitting device, and the light-emitting drive signal is used to control the display grayscale of the sub-pixel where the light-emitting device is located.

[0114] For example, referring to FIG9A , the plurality of electrical connection structures further include a second electrical connection structure 02, which includes the first electrode and the second electrode of the aforementioned electrical connection structure. To distinguish the plurality of electrical connection structures from the other electrical connection structures, the first electrode of the second electrical connection structure 02 is labeled 212 in FIG9A , and the second electrode of the second electrical connection structure 021 is labeled 222. The plurality of light-emitting units of the light-emitting array include a first light-emitting unit PU1 and a second light-emitting unit PU2 located in the same column. FIG9A only shows the first light-emitting unit PU1 as an example. The position of the second light-emitting unit PU2 relative to the first light-emitting unit PU1 can be referred to FIG5 . For example, each column extends from the FPC circuit board to the display area, such as from the fan-out area Fanout to the display area.

[0115] For example, referring to FIG9A , the first electrode 212 of the second electrical connection structure 02 is electrically connected to the printed circuit board (FPC) to receive a light-emission control signal from the FPC. The second electrode 222 of the second electrical connection structure 02 is electrically connected to the input terminal of the driver circuit IC corresponding to the first light-emitting unit PU1. The light-emission control signal can be a light-emission drive signal for controlling the light-emitting state of the light-emitting device, and the light-emission drive signal is used to control the light-emitting brightness of the light-emitting device. Alternatively, when the light-emitting unit is a display pixel, the light-emission control signal can be a data signal for controlling the grayscale of the light-emitting brightness of the light-emitting device. Alternatively, the light-emission control signal can be a timing control signal for controlling the light-emitting device to emit light.

[0116] For example, referring to FIG9A , the plurality of electrical connection structures further includes a third electrical connection structure 03, which includes the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from the other electrical connection structures, FIG9A shows the first electrode of the third electrical connection structure 03 as 213, and the second electrode of the third electrical connection structure 03 as 223. The second electrode 223 of the third electrical connection structure 03 is electrically connected to the output terminal of the driver circuit IC corresponding to the first light-emitting unit PU1, and the first electrode 213 of the third electrical connection structure 03 is electrically connected to the input terminal of the driver circuit IC corresponding to the second light-emitting unit PU2 to provide a light-emission control signal to the second light-emitting unit PU2.

[0117] For example, referring to FIG9A , the plurality of electrical connection structures 2 further include a fourth electrical connection structure 04, which includes the first and second electrodes of the aforementioned electrical connection structure. To distinguish it from the other electrical connection structures, FIG9A shows the first electrode 214 and the second electrode 224 of the fourth electrical connection structure 04. The first electrode 214 of the fourth electrical connection structure 04 is grounded, and the second electrode 224 of the fourth electrical connection structure 04 is electrically connected to the ground signal input terminal of the driver circuit IC.

[0118] For example, the light-emitting device is a sub-millimeter light-emitting diode (Mini LED) or a micro light-emitting diode (Micro LED). For example, a sub-millimeter light-emitting diode (Mini LED) has a size of approximately 100-300 μm. A micro light-emitting diode (Micro LED) has a size of less than 100 μm.

[0119] The light-emitting substrate 10 includes a light-emitting array, which includes a plurality of light-emitting units arranged in an array. Each light-emitting unit includes a plurality of first electrical connection structures 01 and a plurality of light-emitting devices. In one light-emitting unit, the driving circuit IC and the connecting electrode CE are located in the middle, and the light-emitting devices are located on both sides.

[0120] Figure 9B is a schematic diagram of a display device provided by at least one embodiment of the present disclosure. Referring to Figure 9B , the display device 100 includes any of the light-emitting substrates 10 provided by the embodiments of the present disclosure. For example, the light-emitting substrate 10 is a display substrate, the light-emitting region LR is a display region and includes a pixel array. The pixel array includes a plurality of sub-pixels arranged in an array, and each sub-pixel used for display includes the aforementioned light-emitting device. The first electrode 21 and the second electrode 22 of the first electrical connection structure 01 provide an electrical signal to the light-emitting device to drive the light-emitting device to emit light, which is a display drive signal, thereby driving the light-emitting device to display an image.

[0121] Alternatively, in a display device requiring a backlight, the light-emitting substrate 10 can serve as the backlight of the display device and be configured to provide light for display to the display substrate. For example, if the display device 100 is a liquid crystal display device, the light-emitting substrate 10 can serve as the backlight of the liquid crystal display device.

[0122] For example, the display device 100 includes a light-emitting array comprising a plurality of light-emitting devices 10 arranged in an array. For example, the display device can be any product or component with a display function, such as a monitor, display panel, television, electronic paper, mobile phone, tablet computer, laptop computer, digital photo frame, or navigation system. Of course, the display device is not limited to the types listed above.

[0123] Figures 10A-10D are schematic diagrams illustrating a method for fabricating a light-emitting substrate according to an embodiment of the present disclosure. Referring to Figures 10A-10D, the method includes providing a base substrate 1 having a main surface and including a light-emitting region LR and a non-light-emitting region NLR at least partially surrounding the light-emitting region LR; disposing a light-emitting device on the main surface of the base substrate 1, wherein the light-emitting device is located in the light-emitting region LR; and forming an electrical connection structure 2 on the main surface of the base substrate 1.

[0124] Specifically, a method for forming an electrical connection structure 2 provided in an embodiment of the present disclosure is introduced below with reference to FIG. 10A to FIG. 10D .

[0125] Referring to FIG10A , a base substrate 1 is provided, the base substrate 1 having a main surface and including a light-emitting region LR and a non-light-emitting region NLR at least partially surrounding the light-emitting region LR; forming an electrical connection structure 2 on the main surface of the base substrate 1 includes: forming a first electrode 21 on the main surface of the base substrate 1. Before forming the first electrode 21, a buffer layer buffer is formed on the main surface of the base substrate 1, and the first electrode 21 is formed on the buffer layer buffer. For example, the first electrode 21 is formed by a patterning process. For example, the material of the first electrode 21 is a metal material, and the metal material includes a metal or an alloy, such as copper. Copper is a material currently used in the conductive connection structure of the display substrate because it has good conductivity and is easy to obtain and manufacture, so it is the preferred material. Alternatively, the material of the first electrode 21 can be manganese, chromium, copper alloy, manganese alloy, etc. However, the materials of the first electrode and the second electrode are not limited to the types listed above, and the embodiments of the present disclosure are not limited to this.

[0126] Then, referring to FIG10B , forming the inorganic insulating layer 3 includes: forming an inorganic material layer 30, the inorganic insulating layer 3 and the first electrode 21 being stacked in a vertical direction D1 perpendicular to the main surface of the base substrate 1 and located on a side of the first electrode 21 away from the main surface of the base substrate 1, with the inorganic material layer 30 covering the first electrode 21; and performing a dry etching process on the inorganic material layer 30, the dry etching process including: dry etching the inorganic material layer under a first oxygen concentration in a first dry etching stage; and continuing to dry-etch the inorganic material layer 30 after the first dry etching stage under a second oxygen concentration in a second dry etching stage after the first dry etching stage. The gases used in both the first dry etching stage and the second dry etching stage include oxygen, and the oxygen concentrations of the gases used in the first dry etching stage and the second dry etching stage are different: the oxygen concentration of the gas used in the first dry etching stage is the first oxygen concentration, and the oxygen concentration of the gas used in the second dry etching stage is the second oxygen concentration, with the first oxygen concentration being greater than the second oxygen concentration.

[0127] As shown in FIG10C , after the first and second dry etching stages, a first via hole V1 is formed through the inorganic insulating layer 3. The first via hole V1 exposes a portion of the first electrode 21. The inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction D1 perpendicular to the main surface of the base substrate 1 and are located on a side of the first electrode 21 away from the main surface of the base substrate 1. The inorganic insulating layer 3 includes a first sub-portion 3a and a second sub-portion 3b arranged in the vertical direction D1, and the second sub-portion 3b is located on the side of the first sub-portion 3a away from the base substrate 1; the first sub-portion 3a has a first slope S1 surrounding the first via hole V1, and the second sub-portion 3b has a second slope S2 surrounding the first via hole V1; the first electrode 21 has a covering portion not exposed by the first via hole V1, and the covering portion of the first electrode 21 has an upper surface away from the base substrate 1, and a first angle θ1 is formed between the surface where the first slope S1 is located and the upper surface TS1 of the covering portion, and a second angle θ2 is formed between the surface where the second slope S2 is located and the upper surface TS1 of the covering portion, and the second angle θ2 is greater than the first angle θ1.

[0128] In the above method, a first dry etching step in a high-oxygen-concentration atmosphere forms a first slope surface S1 having a small first slope angle θ1. Subsequently, a second dry etching step in a low-oxygen-concentration atmosphere forms a second slope surface S2 having a large second slope angle θ2. The sidewalls of the inorganic insulating layer 3 surrounding the first via hole V1 (i.e., the walls of the first via hole V1) exhibit a double-stepped morphology.

[0129] Then, referring to FIG10D , a second electrode 22 is formed. The second electrode 22 is stacked with the first electrode 21 and the inorganic insulating layer 3 in a perpendicular direction D1, and is located on a side of the inorganic insulating layer 3 away from the major surface of the first electrode 21. The second electrode 22 is electrically connected to the first electrode 21 through the first via hole V1. This results in the electrical connection structure of the display substrate shown in FIG7 .

[0130] The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2 , and covers the entire first via hole V0 . The second electrode 22 has no breakage or cracks, and no other impurities are mixed in the cracks due to the cracks.

[0131] In this way, in the first dry etching stage, the oxygen concentration is high, and the dry etching gas etches the edge of the photoresist used in the etching process faster, so that the slope angle of the first slope surface S1 formed is smaller, which can avoid the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 being too large, thereby facilitating the adhesion of the subsequently formed second electrode 22 to the entire slope surface. Moreover, in the second dry etching stage, the oxygen concentration is high. Although the slope angle formed is large, the proportion of the part with a larger slope angle can be controlled to be smaller, thereby reducing the risk of the second electrode 22 breaking at the slope surface. At the same time, the risk of the subsequently formed second electrode 22 breaking at the slope of the side wall of the first via V1 can be reduced. At the same time, before entering the second dry etching stage, a part of the first electrode 21 has been exposed by the first via V1 or is about to be exposed by the first via V1. Therefore, the second dry etching stage adopts a gas atmosphere with a low oxygen concentration, which can avoid the problem of excessive oxidation of the first electrode 21 under high oxygen concentration after being exposed by the first via V0, resulting in a decrease in adhesion between the first electrode 21 and the second electrode, thereby solving the problem of poor bubbling between the second electrodes 22 caused by this, thereby preventing electrical defects and poor reliability caused by the breakage of the second electrode 22.

[0132] For example, the duration of the second dry etching stage is shorter than the duration of the first dry etching stage, so that the thickness of the second sub-portion 3b in the vertical direction D1 is smaller than the thickness of the first sub-portion 3a in the vertical direction D1. In this way, the thickness of the second sub-portion 3b corresponding to the second slope surface S2 with a larger slope angle is smaller, which is conducive to the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2. Otherwise, even if the above-mentioned bubbling problem is solved, the adhesion between the second electrode 22 and the entire side wall (the entire slope surface) of the inorganic insulating layer 3 surrounding the first via hole V1 is not ideal, further better avoiding the second electrode 22 from breaking at the hole wall of the first via hole V1, resulting in poor electrical performance and reliability.

[0133] For example, the electrical connection structure 2 of the display substrate 10 includes a first electrical connection structure 01 having a first electrode 21 and a second electrode 22 , which are configured to provide the light emitting device with an electrical signal for driving the light emitting device to emit light.

[0134] For example, the electrical connection structure of the display substrate 10 may further include the second electrical connection structure, the third electrical connection structure, and the fourth electrical connection structure in the above-mentioned embodiment of the display substrate 10 .

[0135] Figures 11A-11C are schematic diagrams of another method for manufacturing a light-emitting substrate provided by an embodiment of the present disclosure. The embodiment shown in Figures 11A-11C differs from the embodiment shown in Figures 10A-10D in the following ways.

[0136] Referring to FIG. 11A , forming the inorganic insulating layer 3 includes forming a first sub-inorganic material layer 30 a after forming the first electrode 21. The first sub-inorganic material layer 30 a covers the first electrode 21. Forming the inorganic insulating layer 3 also includes forming a first organic insulating layer, and forming a second via hole V2 penetrating the first organic insulating layer, with the orthographic projection of the first via hole V1 on the base substrate 1 within the orthographic projection of the second via hole V2 on the base substrate 1. The first organic insulating layer 4 has an upper surface 41 facing away from the base substrate 1 and a side surface 42 facing the first via hole V1.

[0137] For example, referring to Figure 11A, forming the inorganic insulating layer 3 also includes: forming a second sub-inorganic material layer 30b, the second sub-inorganic material layer 30b is stacked and in contact with the first sub-inorganic material layer 30a in the vertical direction D1, and the first sub-inorganic material layer 30a and the second sub-inorganic material layer 30b constitute a whole as the above-mentioned inorganic material layer.

[0138] Referring to FIG11B , forming an electrical connection structure includes dry etching the inorganic material layer composed of the first sub-inorganic material layer 30a and the second sub-inorganic material layer 30b, wherein the dry etching process includes a first dry etching stage and a second dry etching stage. In the first dry etching stage, the inorganic material layer is dry-etched under a first oxygen concentration; and in the second dry etching stage following the first dry etching stage, the inorganic material layer 30, after the first dry etching stage, is further dry-etched under a second oxygen concentration. The gas used in both the first dry etching stage and the second dry etching stage includes oxygen, and the oxygen concentration of the gas used in the first dry etching stage and the second dry etching stage is different, with the oxygen concentration of the gas used in the first dry etching stage being the first oxygen concentration and the oxygen concentration of the gas used in the second dry etching stage being the second oxygen concentration, wherein the first oxygen concentration is greater than the second oxygen concentration.

[0139] As shown in Figure 11B, after the first and second dry etching stages, a first via hole V1 is formed through the inorganic insulating layer 3. The first via hole V1 exposes a portion of the first electrode 21. The inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction D1 perpendicular to the main surface of the base substrate 1 and are located on a side of the first electrode 21 away from the main surface of the base substrate 1. The inorganic insulating layer 3 includes a first sub-portion 3a and a second sub-portion 3b arranged in the vertical direction D1, and the second sub-portion 3b is located on the side of the first sub-portion 3a away from the base substrate 1; the first sub-portion 3a has a first slope S1 surrounding the first via hole V1, and the second sub-portion 3b has a second slope S2 surrounding the first via hole V1; the first electrode 21 has a covering portion not exposed by the first via hole V1, and the covering portion of the first electrode 21 has an upper surface away from the base substrate 1, and a first angle θ1 is formed between the surface where the first slope S1 is located and the upper surface TS1 of the covering portion, and a second angle θ2 is formed between the surface where the second slope S2 is located and the upper surface TS1 of the covering portion, and the second angle θ2 is greater than the first angle θ1.

[0140] In the above method, a first dry etching step in a high-oxygen-concentration atmosphere forms a first slope surface S1 having a small first slope angle θ1. Subsequently, a second dry etching step in a low-oxygen-concentration atmosphere forms a second slope surface S2 having a large second slope angle θ2. The sidewalls of the inorganic insulating layer 3 surrounding the first via hole V1 (i.e., the walls of the first via hole V1) exhibit a double-stepped morphology.

[0141] Then, referring to FIG10D , a second electrode 22 is formed. The second electrode 22 is stacked with the first electrode 21 and the inorganic insulating layer 3 in a perpendicular direction D1, and is located on a side of the inorganic insulating layer 3 away from the major surface of the first electrode 21. The second electrode 22 is electrically connected to the first electrode 21 through the first via hole V1. This results in the electrical connection structure of the display substrate shown in FIG8 .

[0142] For example, the duration of the second dry etching stage is shorter than the duration of the first dry etching stage, so that the thickness of the second sub-section in the vertical direction D1 is smaller than the thickness of the first sub-section in the vertical direction D1. In this embodiment, for the division of the first sub-section and the second sub-section, please refer to the description of the embodiment shown in Figure 8. In this way, the thickness of the second sub-section corresponding to the second slope surface S2 with a larger slope angle is smaller, which is conducive to the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2. Otherwise, even if the above-mentioned bubbling problem is solved, the adhesion effect between the second electrode 22 and the entire side wall (the entire slope surface) surrounding the first via hole V1 of the inorganic insulating layer 3 is not ideal, and the electrical and reliability defects caused by the breakage of the second electrode 22 at the hole wall of the first via hole V1 are further better avoided.

[0143] For example, at the end of the first dry etching stage, the upper surface of the first electrode 21 has not been exposed. At this time, the second dry etching stage is entered to ensure that the upper surface of the first electrode 21 is not exposed to a gas environment with a high oxygen concentration, so as to prevent the upper surface of the first electrode 21 from having reduced adhesion and bubbling.

[0144] Or, for example, at the end of the first dry etching stage, the upper surface of the first electrode 21 is just exposed. At this time, the second dry etching stage is entered to minimize the time that the upper surface of the first electrode 21 is exposed to the high oxygen concentration gas atmosphere, so as to avoid the problem of bubbling caused by the decrease in adhesion due to the oxidation of the upper surface of the first electrode 21.

[0145] Here, “just now” means that when a dry etching stage ends, the time for the upper surface of the first electrode 21 to be exposed can be very short, for example, less than 5% of the duration of the first dry etching stage or less than 10 seconds.

[0146] For example, in the first and second dry etching stages, the gases used for dry etching include oxygen and an auxiliary gas, where the oxygen concentration is the ratio of oxygen to the total amount of oxygen and the auxiliary gas. The first oxygen concentration is 60% to 80%, and the second oxygen concentration is 8% to 25%. For example, the auxiliary gas is CF4, but is certainly not limited to CF4.

[0147] Several examples of products obtained by using different first oxygen concentrations and second oxygen concentrations are described below.

[0148] The first oxygen concentration used was 60% to 80%, and the second oxygen concentration used in the second dry etching stage was 0%. The resulting electrical connection structure is shown in Figure 12A (FIB slice image). The electrical connection structure in the actual product achieves the desired effect. The white lines in the figure are located at the two slopes, and the second electrode does not break at either slope. However, because the second oxygen concentration used in the second dry etching stage is 0%, the dry etching reaction products are difficult to remove, resulting in a large amount of dry etching byproducts remaining at the slope angle edge of the first slope.

[0149] The first oxygen concentration used in the first dry etching stage was 60% to 80%, and the second oxygen concentration used in the second dry etching stage was 7%. The resulting electrical connection structure is shown in Figure 12B. The electrical connection structure in the actual product can achieve the desired effect. The white lines in the figure are located at the positions of the two slopes, and the second electrode does not break at the positions of the two slopes. However, due to the lower second oxygen concentration used in the second dry etching stage, the dry etching reaction products are difficult to remove, resulting in a small amount of dry etching byproducts remaining at the slope angle edge of the first slope and at the overlap of the second electrode and the first electrode (shown as holes in the FIB slice image shown in Figure 12B).

[0150] The first oxygen concentration used in the first dry etching stage was 60% to 80%, and the second oxygen concentration used in the second dry etching stage was 8%. The resulting electrical connection structure is shown in Figure 12C. The electrical connection structure in the actual product can achieve the desired effect. The white lines in the figure are located at the positions of the two slopes, and the second electrode does not break at the positions of the two slopes. However, due to the lower second oxygen concentration used in the second dry etching stage, the dry etching reaction products are difficult to completely remove, resulting in a smaller amount of dry etching byproducts remaining at the slope angle edge of the first slope and at the overlap of the second electrode and the first electrode (shown as holes in the FIB slice image shown in Figure 12C). After product testing, this condition has little impact on the product and can be used.

[0151] The first oxygen concentration used in the first dry etching stage is 60% to 80%, and the second oxygen concentration used in the second dry etching stage is 13%. The electrical connection structure obtained is shown in Figure 12D (FIB slice image) and Figure 12E (TEM slice image). The electrical connection structure in the actual product can achieve a more ideal effect. The positions of the white lines in the figure are the positions of the two slopes. The second electrode does not break at the positions of the two slopes. There are no dry etching by-products remaining on the slope angle edge of the first slope and the overlap between the second electrode and the first electrode. The bonding effect between the second electrode and the first electrode is ideal, and no bubbling occurs.

[0152] The first oxygen concentration used in the first dry etching stage was 60% to 80%, and the second oxygen concentration used in the second dry etching stage was 25%. The resulting electrical connection structure is shown in Figure 12F. The electrical connection structure in the actual product can achieve the desired effect. The white lines in the figure are located at the positions of the two slopes, and the second electrode does not break at the positions of the two slopes. However, due to the lower second oxygen concentration used in the second dry etching stage, the dry etching reaction products are difficult to completely remove, resulting in a smaller amount of dry etching byproducts remaining at the slope angle edge of the first slope and at the junction of the second electrode and the first electrode (shown as holes in the FIB slice image shown in Figure 12C). After product testing, this condition has little impact on the product and can be used.

[0153] In addition, after product analysis and testing, when the second oxygen concentration used in the second dry etching stage is greater than 25%, the exposed first electrode is severely oxidized and the product bubbling phenomenon is serious.

[0154] Therefore, when the first oxygen concentration used in the first dry etching stage is 60% to 80% and the second oxygen concentration used in the second dry etching stage is within the range of 8% ≤ O2 ≤ 25%, the actual product can achieve the expected effect and no other obvious related defects will occur.

[0155] For example, after experimental exploration and product testing, the best embodiment is to select an oxygen content of about 74% (fluctuating by 5%) in the high oxygen atmosphere for PVX1 dry etching in the first step, and to select an oxygen content of about 13% (fluctuating by 5%) in the low oxygen atmosphere for PVX1 dry etching in the second step.

[0156] MLED light-emitting substrates currently have the following problems.

[0157] (1) For MLED light-emitting substrates, such as MLED light-emitting substrates using glass substrates, when bonding the MLED, it is found that the glass substrate is significantly warped and cannot meet the warping specification (<0.2mm), thereby making it impossible to perform bonding rework, resulting in the product being unable to proceed to subsequent processes.

[0158] (2) FIG13 is a schematic diagram showing a conductive structure of a light-emitting substrate in which a gap S (the black portion is the gap S) is provided between the metal electrode 21a and the inorganic layer 3a. In this case, the gap between the metal electrode and the inorganic layer causes the conductive structure to be unstable and to have poor resistance to pressure and impact.

[0159] (3) Figure 14 is a schematic plan view of a local section of a conductive structure of a light-emitting substrate where bubbling occurs; Figure 15 is a cross-sectional view of the section at the bubbling location within the dashed circle in Figure 14; and Figure 16 is an enlarged view of the location within the dashed circle in Figure 15. Referring to Figures 14-16, current glass-based MLED products using SDL glass can suffer from surface-to-surface corrosion during reliability testing. This is primarily due to the abnormal growth of Na / Ca ions precipitated from the glass itself during environmental testing, which leads to corrosion of the conductive metal layer and bubbling, severely impacting the reliability performance of the MLED light-emitting substrate.

[0160] At least one embodiment of the present disclosure provides a light-emitting substrate, which includes: a base substrate, a light-emitting device, and an electrical connection structure. The base substrate has a main surface, the light-emitting substrate includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; the light-emitting device is arranged on the main surface of the base substrate and located in the light-emitting area; the electrical connection structure includes a first electrode and an inorganic insulating layer; the first electrode is located on the main surface of the base substrate; the inorganic insulating layer is stacked in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and the inorganic insulating layer is directly and tightly adhered to the upper surface of the first electrode. The light-emitting substrate provided by at least one embodiment of the present disclosure can increase the structural stability and mechanical strength of the electrical connection structure, improve the pressure resistance and impact resistance of the electrical connection structure, and is conducive to increasing the service life of the light-emitting substrate.

[0161] At least one embodiment of the present disclosure further provides a display device, comprising any one of the light-emitting substrates provided in the embodiments of the present disclosure. The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display drive signal to drive the light-emitting device to display an image; or the light-emitting substrate serves as a backlight source for the display device and is configured to provide light for display to the display substrate.

[0162] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate, comprising: providing a base substrate, wherein the base substrate has a main surface and includes a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; arranging a light-emitting device on the main surface of the base substrate, wherein the light-emitting device is located in the light-emitting area; and forming an electrical connection structure on the main surface of the base substrate, comprising: forming a first electrode, wherein the first electrode is located on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer and the first electrode are stacked in a vertical direction perpendicular to the main surface of the base substrate, and are located on a side of the first electrode away from the main surface of the base substrate, wherein the first electrode has an upper surface away from the base substrate, the inorganic insulating layer covers the upper surface of the first electrode, and there is a first gap between the inorganic insulating layer and the upper surface of the first electrode, and the width of the first gap is less than 0.2 μm.

[0163] For example, FIG5 is a schematic diagram of the overall structure of a light-emitting substrate provided in one embodiment of the present disclosure. The light-emitting substrate 10 provided in at least one embodiment of the present disclosure includes a light-emitting area LR and a non-light-emitting area NLR that at least partially surrounds the light-emitting area LR; a light-emitting unit PU is provided on the main surface of the base substrate 1, and the light-emitting unit PU is located in the light-emitting area LR and includes a light-emitting device. For example, each light-emitting unit PU includes a plurality of sub-light-emitting units, for example, the light-emitting substrate 10 includes a plurality of light-emitting units PU, and the plurality of light-emitting units PU are arranged in an array. For example, FIG5 takes an example in which a light-emitting unit PU includes four sub-light-emitting units, and the four sub-light-emitting units are respectively a first sub-light-emitting unit P1, a second sub-light-emitting unit P2, a third sub-light-emitting unit P3 and a fourth sub-light-emitting unit P4. Of course, it is not limited to four, and can also be less than or more than four, and can be designed according to specific needs.

[0164] Figure 17 is a cross-sectional view under a scanning electron microscope of an electrical connection structure of a light-emitting substrate provided by an embodiment of the present disclosure. Referring to Figure 17, the light-emitting substrate 10 includes an electrical connection structure 2. The electrical connection structure 2 includes a first electrode 21 and an inorganic insulating layer 3; the first electrode 21 is located on the main surface of the base substrate 1; the inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction perpendicular to the main surface of the base substrate 1, and are located on the side of the first electrode 21 away from the main surface of the base substrate 1; the first electrode 21 has an upper surface away from the base substrate 1, and the inorganic insulating layer 3 covers the upper surface 21A of the first electrode 21, and there is a first gap between the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21, and the width of the first gap is less than 0.2μm. The inventors of the present application improved the width of the above-mentioned first gap through the exploration of structural parameters and process parameters, so that the light-emitting substrate provided by the embodiment of the present disclosure has better performance. Compared with the situation where there is a large gap between the inorganic layer 3a and the upper surface of the first electrode 21a similar to that shown in Figure 13, in the light-emitting substrate provided by the embodiment of the present disclosure, the width of the first gap is less than 0.2μm, which can increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 on the first electrode 21, and improve the pressure and impact resistance of the electrical connection structure 2, which is beneficial to improving the service life of the light-emitting substrate 10.

[0165] For example, referring to FIG17 , the width of the first slit is less than 0.1 μm, thereby further increasing the structural stability and mechanical strength of the electrical connection structure 2, improving the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhancing the compressive and impact resistance of the electrical connection structure 2, thereby facilitating an increase in the service life of the light-emitting substrate 10. In product testing, light-emitting substrates with a first slit width less than 0.1 μm exhibit significantly better compressive and impact resistance, thereby facilitating an increase in the service life of the light-emitting substrate 10.

[0166] Furthermore, referring to FIG17 , for example, the width of the first slit can be less than 0.05 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhance the compressive and impact resistance of the electrical connection structure 2. In product testing, light-emitting substrates with a first slit width less than 0.05 μm exhibited improved compressive and impact resistance, which helps to extend the service life of the light-emitting substrate 10.

[0167] It should be noted that the width of the first slit refers to the width of the first slit in the direction in which the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are opposite to each other.

[0168] For example, the inorganic insulating layer 3 is directly and tightly bonded to the upper surface 21A of the first electrode 21, i.e., there is no gap or impurity between the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21. This can increase the structural stability and mechanical strength of the electrical connection structure 2, improve the compressive and impact resistance of the electrical connection structure 2, and help increase the service life of the light-emitting substrate 10.

[0169] Figure 13 is a schematic diagram of a conductive structure of a light-emitting substrate with a gap S between the metal electrode 21a and the inorganic layer 3a. The light-emitting substrate 10 provided by the embodiment of the present disclosure is different from the description of the gap S in the prior art, and is different from the "schematic diagram composed of line drawings" in the prior art. For example, in the light-emitting substrate 10 provided by the embodiment of the present disclosure, under an electron scanning microscope (SEM), the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are also tightly fitted, and there are no bubbles, gaps and impurities composed of other substances between the two, so as to achieve the ideal effect of improving the wrapping performance of the inorganic insulating layer 3 on the first electrode 21.

[0170] For example, referring to FIG17 , the first electrode 21 further has a side surface 21B intersecting with the upper surface 21A, the inorganic insulating layer 3 covers the side surface 21B of the first electrode 21, and the inorganic insulating layer 3 also covers the side surface 21B of the first electrode 21. Furthermore, a second gap exists between the inorganic insulating layer 3 and the side surface 21B of the first electrode 21, and the width of the second gap is less than 0.2 μm. The inventors of this application have improved the width of the second gap by exploring structural parameters and process parameters, so that the light-emitting substrate provided by the embodiment of the present disclosure has better performance. Compared to the case where the gap between the inorganic layer 3a and the side surface of the first electrode 21a is larger, similar to the case shown in FIG13 , in the light-emitting substrate provided by the embodiment of the present disclosure, the width of the second gap is less than 0.2 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 on the first electrode 21, and improve the pressure and impact resistance of the electrical connection structure 2, which is conducive to increasing the service life of the light-emitting substrate 10.

[0171] For example, referring to FIG17 , the width of the second slit is less than 0.1 μm, thereby further increasing the structural stability and mechanical strength of the electrical connection structure 2, improving the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhancing the compressive and impact resistance of the electrical connection structure 2, thereby facilitating an increase in the service life of the light-emitting substrate 10. In product testing, light-emitting substrates with a second slit width less than 0.1 μm exhibited significantly better compressive and impact resistance, thereby facilitating an increase in the service life of the light-emitting substrate 10.

[0172] Furthermore, referring to FIG. 17 , for example, the width of the second slit can be less than 0.05 μm, which can further increase the structural stability and mechanical strength of the electrical connection structure 2, improve the wrapping performance of the inorganic insulating layer 3 around the first electrode 21, and enhance the compressive and impact resistance of the electrical connection structure 2. In product testing, light-emitting substrates with a second slit width less than 0.05 μm exhibited improved compressive and impact resistance, which helps to extend the service life of the light-emitting substrate 10.

[0173] It should be noted that the width of the second slit refers to the width of the second slit in the direction in which the inorganic insulating layer 3 and the side surface 21B of the first electrode 21 are opposite to each other.

[0174] For example, the inorganic insulating layer 3 is tightly attached to the side surface 21B of the first electrode 21 without bubbles, gaps or impurities therebetween, thereby achieving a more ideal effect of improving the wrapping performance of the inorganic insulating layer 3 on the first electrode 21 .

[0175] FIG18 is a cross-sectional view under a scanning electron microscope of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure. For example, referring to FIG18 , the inorganic insulating layer 3 includes a top portion 301 and a side portion 302. The top portion 301 of the inorganic insulating layer 3 covers the upper surface. The side portion 302 of the inorganic insulating layer 3 is connected to the top portion 301 of the inorganic insulating layer 3 and covers the side surface of the first electrode 21. The top portion 301 of the inorganic insulating layer 3 includes a main portion B and a protrusion P. The main portion B covers the upper surface of the first electrode 21. The protrusion P extends from the main portion B in a horizontal direction parallel to the main surface of the base substrate 1 and protrudes from the main portion B and the side surface, that is, the surface of the side portion 302 of the inorganic insulating layer 3. For example, in FIG18 , a virtual connecting line is constructed from the bottom to the top of the outer side surface of the side portion 302 of the inorganic insulating layer 3, and the protrusion P is located outside the virtual connecting line.

[0176] For example, when the thickness of the inorganic insulating layer 3 is within a predetermined range, the horizontal length of the protrusion P decreases as the thickness of the inorganic insulating layer 3 increases. The thickness of the inorganic insulating layer 3 refers to, for example, the thickness of its upper portion in a direction perpendicular to the main surface of the base substrate.

[0177] For example, the preset range includes at least 1200 angstroms to 3500 angstroms. Figures 18, 19, and 20 respectively illustrate the inorganic insulating layer 3 having thicknesses of 1200 angstroms, 2400 angstroms, and 3500 angstroms. Taking the structures under these three thickness conditions as examples, as the thickness of the inorganic insulating layer 3 increases from 1200 angstroms to 3500 angstroms, the horizontal length of the protrusion P gradually decreases.

[0178] For example, the top 301 of the inorganic insulating layer 3 covers the upper surface 21A of the first electrode 21, the side 302 of the inorganic insulating layer 3 is connected to the top 301 of the inorganic insulating layer 3, and the side 302 of the inorganic insulating layer 3 covers the side surface 21B of the first electrode 21; the inorganic insulating layer 3 has an interface IP located at the junction of the top 301 and the side 302, the interface IP corresponds to the edge of the first electrode 21 away from the base substrate 1, and in the interface IP, the top 301 of the inorganic insulating layer 3 and the side 302 of the inorganic insulating layer 3 are continuously connected, and the interface IP is dense and has no cracks. The solution in the light-emitting substrate 10 provided by the embodiment of the present disclosure, in which "the top 301 of the inorganic insulating layer 3 and the side 302 of the inorganic insulating layer 3 are continuously connected, and the interface IP is dense and has no cracks", is different from the "schematic diagram composed of line drawings" in the prior art. For example, in the light-emitting substrate 10 provided by the embodiment of the present disclosure, under an electron scanning microscope (SEM), the inorganic insulating layer 3 and the upper surface 21A of the first electrode 21 are also tightly fitted, and there are no gaps or impurities composed of other substances between the two.

[0179] For example, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is 50° to 60°, and the thickness of the first electrode 21 is 2.7 μm; or the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is 55° to 65°, and the thickness of the first electrode 21 is 3.6 μm. In this way, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is within a suitable range, which can prevent the inorganic insulating layer 3 from breaking and ensure that the inorganic insulating layer 3 has good wrapping properties around the first electrode 21.

[0180] For example, the electrical connection structure 2 also includes: a buffer layer buffer, which is stacked vertically with the first electrode 21; in order to reduce the warping level of the base substrate 1, after a large number of experimental studies, the following thickness range of the buffer layer buffer and the stress range of the buffer layer buffer are obtained, which can effectively reduce the warping level of the base substrate, facilitate the adhesion of the various film layers of the electrical connection structure 2 on the base substrate 1, and reduce the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent solid crystal operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0181] For example, the thickness of the buffer layer is in the range of 2000 angstroms to 2800 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0182] The thickness of the buffer layer is in the range of 3600 angstroms to 4500 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0183] The thickness of the buffer layer is in the range of 4600 angstroms to 5400 angstroms, and the stress of the buffer layer is in the range of -360 MPa to -440 MPa; or,

[0184] The thickness of the buffer layer is in the range of 5800 angstroms to 6200 angstroms, and the stress range of the buffer layer is less than -800 MPa.

[0185] Furthermore, while meeting the aforementioned buffer layer thickness ranges and buffer layer buffer stress ranges, the effect of the thickness of the first electrode 21 on the warping of the substrate 1 and the electrical connection structure 2 was also explored. For example, the warping specification of the substrate 1 is less than 0.2 mm. For example, when the thickness of the first electrode 21 is 1.8 μm to 3.6 μm, while meeting the aforementioned buffer layer thickness ranges, buffer layer buffer stress ranges, and thickness ranges of the first electrode 21, the warping level of the substrate can be more effectively reduced, facilitating the adhesion of the various film layers of the electrical connection structure 2 on the substrate 1 and reducing the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent die-bonding operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0186] For example, Figures 22-23 are cross-sectional views under a scanning electron microscope of an electrical connection structure with different film layer parameters provided in an embodiment of the present disclosure. In the electrical connection structure shown in Figure 22, the buffer layer has a thickness of 2400 angstroms, and the material of the first electrode 21 is copper and has a thickness of 1.8 μm. In the electrical connection structure shown in Figure 23, the buffer layer has a thickness of 4000 angstroms, and the material of the first electrode 21 is copper and has a thickness of 2.7 μm. In the structures shown in Figures 22 and 23, the flatness of the substrate and the electrical connection structure is relatively good, and the inorganic insulating layer 3 has good coverage of the first electrode 21.

[0187] For example, the inorganic insulating layer 3 includes an edge portion, and the edge portion is stacked and in contact with the buffer layer in a vertical direction.

[0188] For example, the inorganic insulating layer 3 may be made of at least one of silicon nitride, silicon oxide, or silicon oxynitride; the buffer layer may be made of at least one of silicon nitride, silicon oxide, or silicon oxynitride; and the first electrode 21 may be made of copper. For example, the inorganic insulating layer and the buffer layer may be made of the same material. Specifically, for the specific materials of the inorganic insulating layer 3 and the buffer layer, the aforementioned buffer layer thickness range, the buffer layer stress range, and the first electrode 21 thickness range can effectively reduce substrate warpage.

[0189] For example, the base substrate 1 is a glass substrate that does not contain Na or Ca. For example, the base substrate 1 is an SDL substrate. This prevents the abnormal growth caused by the precipitation of Na / Ca ions in the glass itself, which could lead to corrosion of the conductive metal layer and blistering, which could seriously affect the reliability of the MLED light-emitting substrate.

[0190] Figure 6 is a schematic plan view of an electrical connection structure for a light-emitting substrate according to one embodiment of the present disclosure; Figure 7 is a schematic cross-sectional view taken along line A1-A2 in Figure 6 . The schematics shown in Figures 6-7 are combined with Figures 17-20 to illustrate the positional relationship between the electrical connection structures, but the actual morphological features of the layered structures are subject to Figures 17-20 .

[0191] Figure 21 is a scanning electron microscope cross-sectional view of another electrical connection structure of a light-emitting substrate provided in one embodiment of the present disclosure, and Figure 8 is another schematic cross-sectional view along line A1-A2 in Figure 6. In other words, Figure 21 shows an actual structural diagram of the electrical connection structure, and Figure 8 is a schematic diagram of the electrical connection structure. Referring to Figures 21 and 8, for example, the electrical connection structure 2 further includes a second electrode 22, which is stacked vertically with the first electrode 21 and the inorganic insulating layer 3, and is located on a side of the inorganic insulating layer 3 away from the first electrode 21. The second electrode 22 is electrically connected to the first electrode 21 via a first via V1 that penetrates the inorganic insulating layer 3.

[0192] For example, the inorganic insulating layer 3 includes: a first sub-inorganic insulating layer 31 and a second sub-inorganic insulating layer 32 stacked on each other in a vertical direction, the second sub-inorganic insulating layer 32 is located on the side of the first sub-inorganic insulating layer 31 away from the base substrate 1, and the first via V1 passes through the first sub-inorganic insulating layer 31 and the second sub-inorganic insulating layer 32.

[0193] For example, the thickness of the first inorganic sub-insulating layer 31 is greater than 4000 angstroms, so that the warping level of the base substrate and the electrical connection structure meets the requirements and the reliability of subsequent die bonding is guaranteed.

[0194] 7 , the inorganic insulating layer 3 includes a first sub-portion 3a and a second sub-portion 3b arranged in a vertical direction D1, the second sub-portion 3b being located on a side of the first sub-portion 3a away from the base substrate 1; the first sub-portion 3a has a first slope S1 surrounding the first via V1, and the second sub-portion 3b has a second slope S2 surrounding the first via V1; the first electrode 21 has a covering portion not exposed by the first via V1, the covering portion of the first electrode 21 has an upper surface TS1 away from the base substrate 1, a first angle θ1 is formed between the surface where the first slope S1 is located and the upper surface TS1 of the covering portion, a second angle θ2 is formed between the surface where the second slope S2 is located and the upper surface TS1 of the covering portion (represented in FIG7 by the angle between a dotted line parallel to the upper surface TS1 of the covering portion and the surface where the second slope S2 is located), and the second angle θ2 is greater than the first angle θ1, the first angle θ1 being the slope angle of the first slope S1, and the second angle θ2 being the slope angle of the second slope S2. As a result, the side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (i.e., the hole wall of the first via hole V1) presents a double-step morphology, avoiding the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the second electrode 22 from breaking at the hole wall of the first via hole V1, which causes poor electrical performance and poor reliability. In addition, the double-step morphology can be produced by two dry etching processes, the first dry etching process using an atmosphere with a high oxygen concentration, and the second dry etching process using an atmosphere with a low oxygen concentration. Therefore, not only can the double-step morphology structure solve the above-mentioned problem of the second electrode 22 being easily broken at the position of the side wall of the inorganic insulating layer 3 surrounding the first via hole V1, but the two dry etching processes can also prevent the first electrode 21 from being over-oxidized under a high oxygen concentration after being exposed to the first via hole V0, thereby solving the problem of poor bubbling between the second electrode 22 caused by this.

[0195] The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2 , and covers the entire first via hole V0 . The second electrode 22 has no breakage or cracks, and no other impurities are mixed in the cracks due to the cracks.

[0196] For example, referring to FIG7 , the thickness of the second sub-portion 3b in the vertical direction D1 is less than the thickness of the first sub-portion 3a in the vertical direction D1. Thus, the second sub-portion 3b corresponding to the second slope surface S2 having a larger slope angle has a smaller thickness, which facilitates the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2. Otherwise, even if the aforementioned bubbling problem is solved, the adhesion between the second electrode 22 and the entire sidewall (the entire slope surface) of the inorganic insulating layer 3 surrounding the first via V1 is not ideal, further effectively preventing the second electrode 22 from breaking at the hole wall of the first via V1, which could lead to poor electrical performance and reliability.

[0197] For example, referring to FIG7 , the thickness of the second sub-portion 3 b in the vertical direction D1 accounts for a ratio of less than or equal to 1 / 3 of the thickness of the inorganic insulating layer 3 in the vertical direction D1. Experimental verification shows that satisfying this condition can better prevent the second electrode 22 from breaking at the wall of the first via hole V1, thereby achieving higher electrical reliability.

[0198] For example, a buffer layer buffer is provided on the main surface of the substrate 1 , and the first electrode 21 , the second electrode 22 , the inorganic insulating layer 3 , etc. are all provided on the buffer layer buffer.

[0199] For example, the first angle θ1 ranges from 15° to 30°, and the second angle θ2 ranges from 50° to 80°. The inventors of this application have discovered that the magnitude of the first angle θ1 and the magnitude of the second angle θ2 have a significant impact on preventing the second electrode from breaking. After experimentation, they have found that within the above-mentioned angle range, a relatively stable and good effect can be achieved. The second angle θ2 cannot be too large, thereby facilitating the adhesion of the second electrode to the second slope surface forming the second angle and preventing the second electrode from breaking. In addition, the magnitude of the first angle θ1 should not be too small or too large. If the first angle θ1 is too small, for example, less than 15°, it will make it difficult to form the first slope surface forming the first angle. If the first angle is too large, for example, greater than 30°, when the above-mentioned two-step dry etching process is used to form the first slope surface and the second slope surface, the second angle will be even larger. This is not conducive to the adhesion of the second electrode to the first slope surface, nor is it conducive to the adhesion of the second electrode to the second slope surface, and the second electrode is prone to breaking at the first and second slope surfaces.

[0200] For example, referring to Figure 7, the portion of the second electrode 22 located in the first via V1 has a bottom surface and a side surface. The bottom surface of the second electrode 22 is in contact with the first electrode 21, with no bubbles, gaps, or impurities between the bottom surface and the first electrode 21. The side surface of the second electrode 22 is in contact with the first slope S1 and the second slope S2, with no bubbles, gaps, or impurities between the bottom surface and the first slope S1 and the second slope S2. "Impurities" here refer to substances formed during the manufacturing process other than the target layers of the first electrode 21, the second electrode 22, and the inorganic insulating layer 3.

[0201] As shown in Figure 7, the portion of the second electrode 22 covering the first slope surface S1 and the second slope surface S2 away from the surface of the substrate 1 has a slope, and the angle between the slope and the plane where the main surface of the substrate 1 is located is the slope angle of the second electrode 22. For example, the slope angle of the second electrode 22 is less than 90°, for example, 30° to 60°.

[0202] For example, the material of the inorganic insulating layer 3 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride; the material of the first electrode 21 and the second electrode 22 is a metal material, including a metal or alloy, such as copper. Copper is a preferred material for the conductive connection structure currently used in display substrates due to its good conductivity, ease of acquisition, and ease of fabrication. Alternatively, the material of the first electrode 21 and the second electrode 22 can be manganese, chromium, copper alloy, manganese alloy, etc. However, the materials of the first and second electrodes are not limited to the types listed above, and the present disclosed embodiments do not impose such restrictions.

[0203] Fig. 8 is another schematic cross-sectional view along line A1-A2 in Fig. 6. The embodiment shown in Fig. 8 differs from the embodiment shown in Fig. 7 in the following ways.

[0204] For example, referring to FIG8 , the inorganic insulating layer 3 includes a first sub-inorganic insulating layer 31 and a second sub-inorganic insulating layer 32 stacked one above the other in a vertical direction D1. The second sub-inorganic insulating layer 32 is located on a side of the first sub-inorganic insulating layer 31 away from the base substrate 1 . A first via V1 extends through the first and second sub-inorganic insulating layers 31 and 32 . The second sub-inorganic insulating layer 32 includes an upper portion 32 t and a lower portion 32 b . The lower portion 32 t contacts the first sub-inorganic insulating layer 31 . The upper portion 32 t is located on a side of the lower portion 32 b away from the first sub-inorganic insulating layer 31 . The upper portion 32 t serves as a second sub-portion having a second slope S2 , while the lower portion 32 b and the first sub-inorganic insulating layer 31 together serve as a first sub-portion having a first slope S1 . The dashed line l in FIG8 schematically represents the boundary between the upper portion 32 t and the lower portion 32 b . In the structure shown in Figure 8, the inorganic insulating layer 3 is composed of two sub-inorganic insulating layers. The side wall of the inorganic insulating layer 3 surrounding the first via hole V1 (that is, the hole wall of the first via hole V1) also presents a double-step morphology. Similar to the technical effect shown in Figure 7, the embodiment shown in Figure 8 can also prevent the slope angle of the entire side wall of the inorganic insulating layer 3 surrounding the first via hole V1 from being too large, thereby facilitating the adhesion of the second electrode 22 to the first slope surface S1 and the second slope surface S2, and avoiding the electrical and reliability problems caused by the breakage of the second electrode 22 at the hole wall of the first via hole V1. In addition, the double-step morphology can be produced by two dry etching processes. The first dry etching process uses an atmosphere with a high oxygen concentration, and the second dry etching process uses an atmosphere with a low oxygen concentration to solve the problem of poor bubbling between the second electrodes 22 caused by this.

[0205] For example, the first and second inorganic insulating layers 31 and 32 may be made of the same material. For example, the first and second inorganic insulating layers 31 and 32 may be made of at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0206] For example, referring to Figure 8, the light-emitting substrate 10 also includes a first organic insulating layer 4, which is located between the first sub-inorganic insulating layer 31 and the second sub-inorganic insulating layer 32, and includes a second via hole V2. The orthographic projection of the first via hole V1 on the base substrate 1 is within the range of the orthographic projection of the second via hole V2 on the base substrate 1. The first organic insulating layer 4 has an upper surface 41 away from the base substrate 1 and a side surface 42 facing the first via hole V1. The second sub-inorganic insulating layer 32 covers the upper surface 41 and the side surface 42 of the first organic insulating layer 4; the portion of the first sub-inorganic insulating layer 31 close to the first via hole V1 includes a first edge portion 31e exposed by the second via hole V2, and the portion of the second sub-inorganic insulating layer 32 covering the side surface 42 of the first organic insulating layer 4 is a second edge portion 32e. The second edge portion 32e also covers the first edge portion 31e and contacts the first edge portion 31e. The whole formed by the first edge portion 31e and the second edge portion 32e includes a first slope surface S1 and a second slope surface S2. Typically, after forming the first inorganic insulating layer 31, the first organic insulating layer 4 is formed, and then the second inorganic insulating layer 32 is formed. The second inorganic insulating layer 32 covers the first organic insulating layer 4, and the second edge portion 32e of the second inorganic insulating layer 32 wraps around the edge of the first organic insulating layer 4, thereby protecting the first organic insulating layer 4 from being etched during the subsequent dry etching process of the inorganic insulating layer 3 composed of the first inorganic insulating layer 31 and the second inorganic insulating layer 32. The second electrode 22 is continuous at the double step including the first slope S1 and the second slope S2. The second electrode 22 covers the entire first via hole V0, and the second electrode 22 has no breaks or cracks, and no impurities are contained in the cracks due to the cracks.

[0207] It should be noted that FIG8 is a cross-sectional view. In fact, the first edge portion 31e is in a ring shape surrounding the first via hole V1, for example, a closed ring shape surrounding the entire first via hole V1.

[0208] For example, referring to FIG8 , the first slope surface S1 includes the intersection of the first edge portion 31e and the second edge portion 32e. The slope angle of the first slope surface S1 at this intersection is the same as the slope angle of the entire first slope surface S1. That is, the entire first slope surface S1 has a smooth transition without abrupt changes at the intersection, which facilitates the adhesion and continuity of the second electrode 22 on the first slope surface S1.

[0209] Other features shown in FIG8 , such as the range of the first angle θ1, the range of the second angle θ2, the range of the slope angle of the second electrode 22 , etc., and the corresponding technical effects are the same as those of the embodiment shown in FIG7 , and reference may be made to the previous description, which will not be repeated here.

[0210] For example, the warping level of the substrate 1 using the above design is less than 0.2 mm, for example, less than 0.1 mm, which can effectively reduce the warping level, facilitate the adhesion of the various film layers of the electrical connection structure 2 on the substrate 1, and reduce the warping of the electrical connection structure 2, thereby ensuring the reliability of the subsequent die-bonding operation of the light-emitting device and ensuring the stable operation of the light-emitting device.

[0211] The warpage level refers to the height difference between the highest point of the main surface of the base substrate and the lowest point of the base substrate in a direction perpendicular to the main surface of the base substrate.

[0212] The electrical connection structure shown in FIG9A can be the electrical connection structure of any light-emitting substrate provided in the embodiments of the present disclosure, for example, it can also be the electrical connection structure shown in FIG17, FIG18, FIG19, FIG20, or FIG21. For a detailed description, please refer to the previous description of FIG9A, which will not be repeated here.

[0213] At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate 10, which includes: providing a base substrate 1, wherein the base substrate 1 has a main surface and includes a light-emitting area LR and a non-light-emitting area NLRLR that at least partially surrounds the light-emitting area LR; arranging a light-emitting device on the main surface of the base substrate 1, wherein the light-emitting device is located in the light-emitting area LR; and forming an electrical connection structure 2 on the main surface of the base substrate 1, including: forming a first electrode 21, wherein the first electrode 21 is located on the main surface of the base substrate 1; forming an inorganic insulating layer 3, wherein the inorganic insulating layer 3 and the first electrode 21 are stacked in a vertical direction perpendicular to the main surface of the base substrate 1, and are located on a side of the first electrode 21 away from the main surface of the base substrate 1, wherein the first electrode 21 has an upper surface away from the base substrate 1, the inorganic insulating layer 3 covers the upper surface of the first electrode 21, and the inorganic insulating layer 3 is directly and tightly fitted to the upper surface of the first electrode 21.

[0214] Specifically, the above structure can be formed layer by layer using conventional processes. For specific structural features, reference can be made to the description in the previous embodiments, which will not be repeated here.

[0215] For example, in the method for manufacturing the light-emitting substrate 10 provided in the embodiment of the present disclosure, a chemical vapor deposition method is used to form the inorganic insulating layer 3. Through experimental exploration and comparison, it is found that the use of a chemical vapor deposition (CVD) method to form the inorganic insulating layer 3 can form a structure as shown in FIG17 , ensuring that the lower surface of the second electrode 22 is in contact with the first electrode 21 and that there are no bubbles, gaps, or impurities between the second electrode 22 and the first electrode 21, and that the inorganic insulating layer 3 is tightly attached to the side surface 21B of the first electrode 21 and that there are no bubbles, gaps, or impurities between the two. Furthermore, the angle between the surface of the side portion 302 of the inorganic insulating layer 3 and the main surface of the base substrate 1 is small. This angle is within an appropriate range, which can prevent the inorganic insulating layer 3 from breaking and ensure that the inorganic insulating layer 3 has good wrapping properties for the first electrode 21. FIG13 shows a structure formed by forming an inorganic insulating layer using physical vapor deposition (PVD). In FIG13 , first, there is a gap between the metal electrode 21a and the inorganic layer 3a in the conductive structure. Second, after testing and comparison, the angle between the surface of the side of the inorganic layer in FIG13 and the main surface of the base substrate is also large, which easily leads to the fracture of the inorganic layer. Third, in FIG13 , at the interface corresponding to FIG17 , the upper and side portions of the inorganic layer have cracks, and the wrapping effect on the metal electrode 21a is not as good as the continuous interface in FIG17 . This shows that compared with the inorganic insulating layer 3 formed by chemical vapor deposition (CVD), the effect achieved by forming the inorganic insulating layer by physical vapor deposition (PVD) is poor.

[0216] For example, the buffer layer is also formed using chemical vapor deposition (CVD), which can achieve good particle control, resulting in a film with strong adhesion, low warpage, and greater stability and durability.

[0217] Furthermore, in Mini LED or Micro LED light-emitting substrates, the buffer layer or inorganic insulating layer 3 is formed using a PVD process. This makes particle control difficult during the deposition process, especially when the buffer layer or inorganic insulating layer 3 is 3600 angstroms thick or thicker. This can easily lead to particle control exceeding requirements for the first electrode 21, resulting in poor film quality. CVD, on the other hand, is easier to adjust film quality than PVD, allowing for greater process adjustment margins in areas such as particle control, stress adjustment, adhesion optimization, and acid wash resistance. Furthermore, CVD is less expensive than PVD. For example, when only the first electrode 21 is formed without the second electrode 22 and the thickness of the first electrode 21 is 1.8 μm, the CVD process is approximately 12% less expensive than the PVD process. When only the first electrode 21 is formed without the second electrode 22 and the thickness of the first electrode 21 is 2.7 μm, the CVD process is even less expensive.

[0218] The above description is merely an exemplary embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. The scope of protection of the present disclosure is determined by the scope defined in the claims.

Claims

1. A light-emitting substrate, comprising: A substrate having a main surface and including the light-emitting substrate including a light-emitting area and a non-light-emitting area at least partially surrounding the light-emitting area; A light emitting device is arranged on the main surface of the base substrate and is located in the light emitting area; as well as An electrical connection structure, wherein the electrical connection structure comprises: A first electrode is located on the main surface of the substrate; an inorganic insulating layer, stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate, and located on a side of the first electrode away from the main surface of the base substrate, wherein the inorganic insulating layer includes a first via hole exposing the first electrode; The second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, and is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole, wherein: The inorganic insulating layer comprises a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on a side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; The first electrode has a covering portion that is not exposed by the first via hole, the covering portion of the first electrode has an upper surface away from the substrate, a first angle is formed between a surface where the first slope surface is located and the upper surface of the covering portion, a second angle is formed between a surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; The electrical connection structure includes a first electrical connection structure having the first electrode and the second electrode, wherein the first electrode and the second electrode of the first electrical connection structure are configured to provide the light emitting device with an electrical signal for driving the light emitting device to emit light.

2. The light-emitting substrate according to claim 1, wherein: The thickness of the second sub-portion in the vertical direction is smaller than the thickness of the first sub-portion in the vertical direction.

3. The light-emitting substrate according to claim 2, wherein: The ratio of the thickness of the second sub-portion in the vertical direction to the thickness of the inorganic insulating layer in the vertical direction is less than or equal to 1 / 3.

4. The light-emitting substrate according to any one of claims 1 to 3, wherein: The inorganic insulating layer comprises: a first sub-inorganic insulating layer and a second sub-inorganic insulating layer stacked on each other in the vertical direction, the second sub-inorganic insulating layer is located on a side of the first sub-inorganic insulating layer away from the base substrate, and the first via hole penetrates the first sub-inorganic insulating layer and the second sub-inorganic insulating layer; The second sub-inorganic insulating layer includes an upper part and a lower part, the lower part is in contact with the first sub-inorganic insulating layer, the upper part is located on the side of the lower part away from the first sub-inorganic insulating layer, the upper part serves as the second sub-part, and the lower part and the first sub-inorganic insulating layer as a whole serve as the first sub-part.

5. The light emitting substrate according to claim 1, wherein: The light-emitting substrate further comprises: a first organic insulating layer, located between the first sub-inorganic insulating layer and the second sub-inorganic insulating layer, and comprising a second via hole, wherein an orthographic projection of the first via hole on the base substrate is within a range of an orthographic projection of the second via hole on the base substrate, the first organic insulating layer has an upper surface away from the base substrate and a side surface facing the first via hole, and the second sub-inorganic insulating layer covers an upper surface and a side surface of the first organic insulating layer; The portion of the first sub-inorganic insulating layer close to the first via includes a first edge portion exposed by the second via, the portion of the second sub-inorganic insulating layer covering the side surface of the first organic insulating layer is a second edge portion, the second edge portion also covers the first edge portion and is in contact with the first edge portion, and the first edge portion and the second edge portion form a whole including the first slope surface and the second slope surface.

6. The light emitting substrate according to claim 5, wherein: The first angle is the slope angle of the first slope surface, and the second angle is the slope angle of the second slope surface; The first slope surface includes a junction position between the first edge portion and the second edge portion, and a slope angle of the first slope surface at the junction position is the same as a slope angle of the entire first slope surface.

7. The light-emitting substrate according to any one of claims 1 to 6, wherein: The first angle ranges from 15° to 30°, and the second angle ranges from 50° to 80°.

8. The light-emitting substrate according to any one of claims 1 to 7, wherein: The portion of the second electrode located in the first via hole has a lower surface and a side surface; The lower surface of the second electrode is in contact with the first electrode and there are no bubbles, gaps or impurities between the second electrode and the first electrode; The side surface of the second electrode contacts the first slope surface and the second slope surface, and there are no bubbles, gaps or impurities between the side surface of the second electrode and the first slope surface and the second slope surface.

9. The light-emitting substrate according to any one of claims 1 to 8, wherein: The material of the inorganic insulating layer includes at least one of silicon nitride, silicon oxide and silicon oxynitride, and the materials of the first electrode and the second electrode are both copper.

10. The light-emitting substrate according to any one of claims 1 to 9, wherein: The light emitting device comprises a first electrode pin and a second electrode pin; The light-emitting substrate also includes a circuit board located in the non-light-emitting area, the first electrode of the first electrical connection structure is electrically connected to the circuit board to receive a power signal from the circuit board, and the second electrode of the first electrical connection structure is electrically connected to the first electrode pin of the light-emitting device to provide the power signal to the light-emitting device, and the power signal is the electrical signal used to drive the light-emitting device to emit light.

11. The light emitting substrate according to claim 10, wherein: The light-emitting substrate includes a first conductive layer and a second conductive layer, the first conductive layer includes the first electrode, and the second conductive layer includes the second electrode; The light-emitting substrate further comprises a driving circuit, wherein the driving circuit is at least partially located in the light-emitting area; The second conductive layer also includes a connecting electrode, a first end of the connecting electrode is electrically connected to the driving circuit, and a second end of the connecting electrode is electrically connected to a second electrode pin of the light-emitting device to provide a light-emitting driving signal to the light-emitting device. The light-emitting device emits light under the drive of the power supply signal and the light-emitting driving signal.

12. The light-emitting substrate according to any one of claims 1 to 11, wherein: The light-emitting substrate includes a plurality of the electrical connection structures, the plurality of the electrical connection structures further include a second electrical connection structure, the second electrical connection structure having a first electrode and a second electrode of the electrical connection structure; The light-emitting substrate further comprises a driving circuit, wherein the driving circuit is at least partially located in the light-emitting area, the light-emitting substrate comprises a light-emitting array, wherein the light-emitting array comprises a plurality of light-emitting units arranged in an array, each of the light-emitting units comprises a plurality of light-emitting devices, and each light-emitting unit is provided with the driving circuit corresponding to the light-emitting unit to control the light-emitting condition of the light-emitting device of the light-emitting unit; the plurality of light-emitting units in the light-emitting array comprises a first light-emitting unit and a second light-emitting unit located in the same column; The first electrode of the second electrical connection structure is electrically connected to the circuit board to receive a light-emitting control signal from the circuit board, and the second electrode of the second electrical connection structure is electrically connected to an input terminal of the driving circuit corresponding to the first light-emitting unit, and the light-emitting control signal includes a light-emitting driving signal for controlling the light-emitting state of the light-emitting device and / or a timing control signal for controlling the light-emitting device to emit light; The multiple electrical connection structures also include a third electrical connection structure, which has a first electrode and a second electrode of the electrical connection structure; the second electrode of the third connection structure is electrically connected to the output end of the driving circuit corresponding to the first light-emitting unit, and the first electrode of the third electrical connection structure is electrically connected to the input end of the driving circuit corresponding to the second light-emitting unit to provide the light-emitting control signal to the second light-emitting unit.

13. The light emitting substrate according to claim 12, wherein: The plurality of electrical connection structures further include a fourth electrical connection structure having the first electrode and the second electrode of the electrical connection structure; A first electrode of the fourth electrical connection structure is grounded, and a second electrode of the fourth electrical connection structure is electrically connected to a ground signal input terminal of the driving circuit.

14. The light-emitting substrate according to any one of claims 1 to 13, wherein: The light emitting device is a sub-millimeter light emitting diode (Mini Light Emitting Diode, referred to as Mini LED) or a micro light emitting diode (Micro Light Emitting Diode, referred to as Micro LED).

15. A display device, comprising the light-emitting substrate according to any one of claims 1 to 14, wherein: The light-emitting substrate is a display substrate, the light-emitting area is a display area and includes sub-pixels, and the sub-pixels include the light-emitting device; the electrical signal provided by the first electrode and the second electrode of the first electrical connection structure to the light-emitting device for driving the light-emitting device to emit light is a display driving signal to drive the light-emitting device to display an image; or, The light emitting substrate serves as a backlight source of the display device and is configured to provide light for display to the display substrate.

16. A method for manufacturing a light-emitting substrate, comprising: Providing a base substrate, wherein the base substrate has a main surface and includes a light emitting area and a non-light emitting area at least partially surrounding the light emitting area; A light emitting device is disposed on the main surface of the base substrate, wherein the light emitting device is located in the light emitting area; and An electrical connection structure is formed on the main surface of the base substrate, comprising: forming a first electrode on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; forming a first via hole penetrating the inorganic insulating layer, wherein the first via hole exposes the first electrode; forming a second electrode, wherein the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; The inorganic insulating layer comprises a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on a side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; The first electrode has a covering portion that is not exposed by the first via hole, the covering portion of the first electrode has an upper surface away from the substrate, a first angle is formed between a surface where the first slope surface is located and the upper surface of the covering portion, a second angle is formed between a surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; The electrical connection structure includes a first electrical connection structure having the first electrode and the second electrode, wherein the first electrode and the second electrode of the first electrical connection structure are configured to provide the light emitting device with an electrical signal for driving the light emitting device to emit light.

17. A method for manufacturing a light-emitting substrate, comprising: Providing a base substrate, wherein the base substrate has a main surface and includes a light emitting area and a non-light emitting area at least partially surrounding the light emitting area; A light emitting device is disposed on the main surface of the base substrate, wherein the light emitting device is located in the light emitting area; and An electrical connection structure is formed on the main surface of the base substrate, comprising: forming a first electrode on the main surface of the base substrate; forming an inorganic insulating layer, wherein the inorganic insulating layer is stacked with the first electrode in a vertical direction perpendicular to the main surface of the base substrate and is located on a side of the first electrode away from the main surface of the base substrate; forming a first via hole penetrating the inorganic insulating layer, wherein the first via hole exposes the first electrode; forming a second electrode, wherein the second electrode is stacked with the first electrode and the inorganic insulating layer in the vertical direction, is located on a side of the inorganic insulating layer away from the first electrode, and is electrically connected to the first electrode through the first via hole; The inorganic insulating layer comprises a first sub-portion and a second sub-portion arranged in the vertical direction, the second sub-portion is located on a side of the first sub-portion away from the base substrate; the first sub-portion has a first slope surface surrounding the first via hole, and the second sub-portion has a second slope surface surrounding the first via hole; The first electrode has a covering portion that is not exposed by the first via hole, the covering portion of the first electrode has an upper surface away from the substrate, a first angle is formed between a surface where the first slope surface is located and the upper surface of the covering portion, a second angle is formed between a surface where the second slope surface is located and the upper surface of the covering portion, and the second angle is greater than the first angle; The forming of the inorganic insulating layer comprises: An inorganic material layer is formed, and the inorganic material layer is subjected to dry etching treatment, wherein the dry etching treatment comprises: In a first dry etching stage, dry etching is performed on the inorganic material layer under a first oxygen concentration condition; and In a second dry etching stage after the first dry etching stage, the inorganic material layer after the first dry etching stage is further dry-etched under a second oxygen concentration condition, wherein: The gases used in the first dry etching stage and the second dry etching stage both include oxygen. The oxygen concentration of the gas used in the first dry etching stage is the first oxygen concentration, and the oxygen concentration of the gas used in the second dry etching stage is the second oxygen concentration. The first oxygen concentration is greater than the second oxygen concentration.

18. The method for manufacturing a light-emitting substrate according to claim 17, wherein: The forming of the inorganic insulating layer comprises: After forming the first electrode, forming a first sub-inorganic material layer; Forming an organic insulating layer, and forming a second via hole penetrating the organic insulating layer, wherein an orthographic projection of the first via hole on the base substrate is within a range of an orthographic projection of the second via hole on the base substrate, and the first organic insulating layer has an upper surface away from the base substrate and a side surface facing the first via hole; forming a second sub-inorganic material layer, wherein the second sub-inorganic material layer is stacked and in contact with the first sub-inorganic material layer in the vertical direction, and the first sub-inorganic material layer and the second sub-inorganic material layer constitute a whole as the inorganic material layer; and The dry etching process is performed on the inorganic material layer composed of the first sub-inorganic material layer and the second sub-inorganic material layer, and the dry etching process includes the first dry etching stage and the second dry etching stage.

19. The method for manufacturing a light-emitting substrate according to claim 17 or 18, wherein: In the first dry etching stage and the second dry etching stage, the gas used for dry etching includes oxygen and auxiliary gas, and the oxygen concentration is the ratio of the oxygen to the total amount of the oxygen and the auxiliary gas; The first oxygen concentration is 60% to 80%, and the second oxygen concentration is 8% to 25%.

20. The method for manufacturing a light-emitting substrate according to any one of claims 17 to 19, wherein: The duration of the second dry engraving stage is shorter than the duration of the first dry engraving stage.

21. The method for manufacturing a light-emitting substrate according to any one of claims 17 to 20, wherein: When the first dry etching stage ends, the upper surface of the first electrode is not exposed yet, and the second dry etching stage is entered; or, When the first dry etching stage ends, the upper surface of the first electrode is just exposed, and then the second dry etching stage begins.

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