Method and system for detecting chemical contamination on back surface of wafer

Abstract

The embodiment of the invention discloses a chemical contamination detection method and system for the back surface of a wafer, and the method comprises the steps: irradiating the back surface of the wafer through employing a light source with the light intensity illumination greater than or equal to 120 Lux and less than or equal to 140 Lux, so as to obtain a detection image; and determining chemical contamination on the back of the wafer according to the detection image.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the field of semiconductor manufacturing technology, and in particular, to a method and system for detecting chemical contamination on the back side of a wafer. Background Art

[0002] In the field of semiconductor manufacturing, the surface quality of a wafer is crucial for the performance of the final product. Common surface defects in the wafer manufacturing process include scratches (Scratch) on the front / back side, chemical contamination (Cloud), grinding marks (Grinding Mark), and edge chipping (Chip), cracks (Crack), etc. Chemical contamination specifically refers to substances that are non-intentionally attached to the wafer surface, which may be formed by chuck marks, finger or glove imprints, stains, wax or solvent residues, etc., resulting in foreign substances on the wafer surface. Under lighting conditions, these contaminations will cause obvious roughness and uneven distribution on the wafer surface, seriously affecting the surface quality of the wafer.

[0003] Traditional wafer surface defect detection methods mainly rely on visual defect detection (Visual Inspection / EBFIS), but the methods in the related technologies have obvious limitations in detecting chemical contamination generated by the wafer polishing process. The existing technologies have a low detection rate for chemical contamination and cannot detect all types of defects in chemical contamination. Summary of the Invention

[0004] In view of this, embodiments of the present disclosure are expected to provide a method and system for detecting chemical contamination on the back side of a wafer; which can solve the technical problem of the detection accuracy of chemical contamination on the back side of the wafer.

[0005] The technical solution of the embodiments of the present disclosure is implemented as follows: In a first aspect, embodiments of the present disclosure provide a method for detecting chemical contamination on the back side of a wafer, including: Irradiating the back side of the wafer with a light source having an illuminance greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image; Determining the chemical contamination on the back side of the wafer according to the detection image.

[0006] In some examples, the determining the chemical contamination on the back side of the wafer according to the detection image includes: When there is a region in the detection image with a luminance value greater than a luminance threshold, obtaining the size of the region; When the size is greater than a size threshold, determining that the region includes chemical contamination.

[0007] In some examples, the luminance threshold is greater than or equal to 100 and less than or equal to 200.

[0008] In some examples, the brightness threshold is greater than or equal to 150 and less than or equal to 180.

[0009] In some examples, the size includes the number of pixels, and the size threshold includes the pixel number threshold; The pixel number threshold is greater than or equal to 150 and less than or equal to 200.

[0010] In some examples, the size includes the number of pixels, and the size threshold includes the pixel number threshold; The pixel number threshold is greater than or equal to 150 and less than or equal to 160.

[0011] In some examples, irradiating the back surface of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image includes: Irradiating the back surface of the wafer with a light source having a light intensity greater than or equal to 130 Lux and less than or equal to 140 Lux to obtain a detection image.

[0012] In some examples, irradiating the back surface of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image includes: Determining the detection requirement for detecting the wafer; When the detection requirement includes detecting the back surface of the wafer, irradiating the back surface of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image.

[0013] In a second aspect, an embodiment of the present disclosure provides a chemical contamination detection system for the back surface of a wafer, including: A light providing device for providing light with a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to irradiate the back surface of the wafer when detecting the back surface of the wafer; An image acquisition device for acquiring a detection image of the wafer; A data processing device for determining the chemical contamination on the back surface of the wafer according to the detection image.

[0014] In some examples, the system further includes: A detection and judgment module for determining whether the detection requirement of the wafer includes detecting the back surface of the wafer, so that when the light providing device detects the back surface, the light intensity is adjusted to be 120 Lux and less than or equal to 140 Lux.

[0015] An embodiment of the present disclosure provides a method and system for detecting chemical contamination on the back side of a wafer; by irradiating the back side of the wafer with a light source having an illuminance intensity between 120 Lux and 140 Lux, the detection of chemical contamination on the back side of the wafer can be completed, and the detection rate of chemical contamination can be improved. Description of the Drawings

[0016] Figure 1 It is a schematic diagram of irradiating a wafer with a light source provided by an embodiment of the present disclosure.

[0017] Figure 2 It is a flowchart of a method for detecting chemical contamination on the back side of a wafer provided by an embodiment of the present disclosure.

[0018] Figure 3 It is a flowchart of another method for detecting chemical contamination on the back side of a wafer provided by an embodiment of the present disclosure.

[0019] Figure 4 It is a flowchart of yet another method for detecting chemical contamination on the back side of a wafer provided by an embodiment of the present disclosure.

[0020] Figure 5 It is a schematic diagram of the detection result when the light intensity is set to 40 Lux provided by an embodiment of the present disclosure.

[0021] Figure 6 It is a schematic diagram of the detection result when the light intensity is set to 100 Lux provided by an embodiment of the present disclosure.

[0022] Figure 7 It is a schematic diagram of the detection result when the light intensity is set to 120 Lux provided by an embodiment of the present disclosure.

[0023] Figure 8 It is a schematic diagram of the detection result when the light intensity is set to 125 Lux provided by an embodiment of the present disclosure.

[0024] Figure 9 It is a schematic diagram of the detection result when the light intensity is set to 130 Lux provided by an embodiment of the present disclosure.

[0025] Figure 10 It is a schematic diagram of the detection result when the light intensity is set to 140 Lux provided by an embodiment of the present disclosure.

[0026] Figure 11 It is a schematic diagram of the detection result when the light intensity is set to 150 Lux provided by an embodiment of the present disclosure.

[0027] Figure 12 It is a schematic diagram of the detection result when the brightness threshold is set to 100 Nit provided by an embodiment of the present disclosure.

[0028] Figure 13 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 150 Nit.

[0029] Figure 14 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 160 Nit.

[0030] Figure 15 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 180 Nit.

[0031] Figure 16 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 200 Nit.

[0032] Figure 17 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 300 Nit.

[0033] Figure 18 Schematic diagram of the detection result when the brightness threshold provided by the embodiment of the present disclosure is set to 80 Nit.

[0034] Through the above-mentioned drawings, the clear embodiments of the present disclosure have been shown, and there will be more detailed descriptions hereinafter. These drawings and text descriptions are not intended to limit the scope of the concept of the present disclosure in any way, but to illustrate the concept of the present disclosure to those skilled in the art by referring to specific embodiments. Detailed implementation manners

[0035] Now, the exemplary embodiments will be described more comprehensively with reference to the drawings. However, the exemplary embodiments can be implemented in various forms and should not be construed as limited to the examples set forth herein; on the contrary, these embodiments are provided so that the present disclosure will be more comprehensive and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments.

[0036] In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repeated description will be omitted. Some of the block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities can be implemented in software form, or in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0037] Regardless of polished wafers and epitaxial wafers (hereinafter collectively referred to as wafers), the defects existing in them have an increasingly significant impact on the subsequent integrated circuit manufacturing process and product yield. The existence of surface defects may lead to circuit short circuits, performance degradation, or even chip failure. Therefore, defect detection of wafers is particularly important. Defect detection on the back side of wafers is especially crucial because these defects may cause serious problems in subsequent processing and applications, such as circuit short circuits and chip performance degradation, thus affecting the reliability and safety of the entire electronic product.

[0038] The Edge Back Front Inspection System (EBFIS) combines electron beam and optical detection technologies and is specifically used for detecting defects on the wafer surface. This technology can provide high-resolution images to identify surface defects such as pits, protrusions, sharp corners, and grooves, with a resolution of up to 5 - 10 nm. The EBFIS technology can efficiently detect chemical contamination on the back side of wafers by precisely controlling the light intensity of the light source and adjusting the detection parameters.

[0039] The illumination structure in the EBFIS technology is the key to achieving high-resolution detection. Referring to Figure 1 , this system usually includes three light sources, each with different light intensity settings to adapt to different types of wafer surface detections. Light source 1 (HighLamp Power1), light source 2 (High Lamp Power2), and light source 3 (High Lamp Power3) are respectively set as light sources for different detection light amounts. By adjusting the light intensity of these light sources, the detection ability for the back side of wafers can be enhanced. Generally, in the EBFIS, three light sources are used to simultaneously detect the front and back sides of the wafer, collect reflected light and scattered light information, and then identify and classify surface defects through image processing technology.

[0040] Generally, the light intensity is set to 40 Lux. At this light intensity, the detection rate of chemical contamination generated by the wafer polishing process is low, and several types of defects in the chemical contamination cannot be detected completely. At the same time, the detection speed is slow. If wafers with back-side chemical contamination flow into the client, it will cause adverse effects in the customer's manufacturing process, leading to circuit short circuits in the chip and an increase in the non-good (NG) rate. The method for detecting chemical contamination on the back side of wafers provided in this disclosure irradiates the back side of the wafer with a light source having a light intensity illuminance greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image; determines the chemical contamination on the back side of the wafer based on the detection image, ensuring both effective detection of chemical contamination and avoiding over-inspection caused by excessive light intensity, thus losing the yield.

[0041] Specifically, referring to Figure 2, the method for detecting chemical contamination on the back side of a wafer according to the present disclosure may include step S210 to step S220.

[0042] In step S210, a light source with a light intensity illumination greater than or equal to 120 Lux and less than or equal to 140 Lux is used to irradiate the back side of the wafer to obtain a detection image.

[0043] In some exemplary embodiments of the present disclosure, when detecting the back side of the wafer, the light intensity of the light source can be adjusted to be greater than or equal to 120 Lux and less than or equal to 140 Lux, and then the back side of the wafer is irradiated with the light source. Then, under the illumination of the light source, a detection image of the back side of the wafer is collected.

[0044] It should be noted that the adjustment of the light intensity is to adjust the above three light sources simultaneously. The light intensities of the three light sources can be the same or different, and the light intensities of the three light sources are all greater than or equal to 120 Lux and less than or equal to 140 Lux.

[0045] In step S220, the chemical contamination on the back side of the wafer is determined according to the detection image.

[0046] After the detection image of the back side of the wafer is collected, the detection image can be analyzed to determine whether there is chemical contamination on the back side of the wafer.

[0047] The method for detecting chemical contamination on the back side of a wafer provided by the present disclosure uses a light source with a light intensity illumination greater than or equal to 120 Lux and less than or equal to 140 Lux to irradiate the back side of the wafer to obtain a detection image; and determines the chemical contamination on the back side of the wafer according to the detection image, ensuring that while effectively detecting chemical contamination, it also avoids misjudging wafers that meet product requirements as NG wafers due to excessive light intensity.

[0048] The following will be described by taking the same light intensity of the above three light sources as an example.

[0049] In some examples, referring to Figure 3 , before performing the back side detection, step S310 can be first executed to determine the detection requirements of the wafer, and then step S320 is executed to determine whether the detection requirements include back side detection. If so, step S330 is executed to adjust the light intensity of the light source in the detection system to be greater than or equal to 120 Lux and less than or equal to 140 Lux; and step S340 is executed to obtain a detection image and determine whether there is chemical contamination on the back side of the wafer based on the detection image; if not, step S350 is executed to detect the wafer according to the conventional detection process.

[0050] When inspecting the back side of a wafer, first, an inspection image of the wafer can be obtained under the condition that the wafer is irradiated by a light source with a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux, and then, based on the inspection image, it is determined whether there is chemical contamination on the back side of the wafer.

[0051] Optionally, in some examples, the above light intensity can also be greater than or equal to 130 Lux and less than or equal to 140 Lux. Specifically, it can be 125 Lux, 128 Lux, 132 Lux, 135 Lux, etc., which will not be elaborated here.

[0052] Specifically, referring to Figure 4 , step S410 can be executed first to obtain the brightness value of the inspection image, and step S420 to determine whether there is an area with a brightness value greater than the brightness threshold, where the setting range of the brightness threshold can be greater than or equal to 100 Nit and less than or equal to 200 Nit. In some examples, the brightness threshold can also be greater than or equal to 150 Nit and less than or equal to 180 Nit. For example, it can be 150 Nit, 152 Nit, 160 Nit, 180 Nit, etc. The specific setting method can be customized based on user requirements, which will not be elaborated here. [[ID=)10]]

[0053] If there is no area with a brightness value greater than the brightness threshold in the above inspection image, it is determined that the wafer has no chemical contamination; if there is an area with a brightness value greater than the brightness threshold in the above inspection image, step S430 can be executed to obtain the size of the area, and step S440 to determine whether the size is greater than the size threshold. If so, step S450 is executed to determine that there is chemical contamination in the area. If the size is less than or equal to the size threshold, it is determined that it does not belong to chemical contamination.

[0054] Optionally, the size can be expressed in terms of the number of pixels. That is to say, the size threshold can be a pixel number threshold, and the pixel number threshold can be greater than or equal to 150 and less than or equal to 200. In some examples, the pixel number threshold can also be greater than or equal to 150 and less than or equal to 160. For example, the pixel number threshold can be 160, 165, 175, 180, etc., which will not be elaborated here.

[0055] The above method for detecting chemical contamination on the back side of the wafer will be described below through multiple embodiments and comparative examples.

[0056] Comparative Example 1 The above light intensity can be set to 40 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, can be inspected. The obtained inspection images are as Figure 5As shown, the determination results based on the detected images are that S1 and S2 are NG, and the others all pass.

[0057] Comparative Example 2 The above light intensity can be set to 100 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, are detected. The detected images are as Figure 6 shown. Based on the detected images, the determination results are that S1, S2, and S3 are NG, and the others all pass.

[0058] Example 1 The above light intensity can be set to 120 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, are detected. The detected images are as Figure 7 shown. According to Figure 7 the results in, it can be obtained that the detection results of all wafers are NG, that is, after increasing the light intensity, the defects that could not be detected before increasing the light intensity can be detected, and the accuracy of defect detection in wafers can be improved.

[0059] Example 2 The above light intensity can be set to 125 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, are detected. The detected images are as Figure 8 shown. According to Figure 8 the results in, it can be obtained that the detection results of all wafers are NG, and some defects that could not be detected when the light intensity was 120 Lux can be detected.

[0060] Example 3 The above light intensity can be set to 130 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, are detected. The detected images are as Figure 9 shown. According to Figure 9 the results in, it can be obtained that the detection results of all wafers are NG, and some defects that could not be detected when the light intensity was 125 Lux can be detected.

[0061] Example 4 The above light intensity can be set to 140 Lux, and five different wafers, namely S1, S2, S3, S4, and S5, are detected. The detected images are as Figure 10 shown. According to Figure 10 the results in, it can be obtained that the detection results of all wafers are NG, and some defects that could not be detected when the light intensity was 130 Lux can be detected.

[0062] Comparative Example 3 The above light intensity can be set to 150 Lux to detect five different wafers, namely S1, S2, S3, S4, and S5. The detected images are as follows Figure 11 shown. According to Figure 11 the results in

[0063] it can be obtained that the detection results of all wafers are NG. However, there will be some defects with extremely small sizes. Such defects will not affect the subsequent production process and the processed products, but will instead lead to over-detection during the detection process, requiring further screening and wasting computing resources. Therefore, when the light intensity is too high, although the detection accuracy will be improved, the wafers that meet the product requirements will be regarded as NG wafers.

[0064] Furthermore, the setting ranges of the brightness threshold and the size threshold will be described in detail below through multiple comparative examples and examples.

[0065] Example 5 In this example, the above brightness threshold can be set to 100 Nit to determine the above detected images. When the above brightness threshold is greater than 100 Nit, it can be determined according to the above size threshold. When the above size threshold is less than 150, such as 140, the detection results are as follows Figure 12 shown, and its detection result is NG, that is, chemical contamination is detected and some defects that do not need to be detected are detected.

[0066] When the brightness threshold is between 150 and 200, such as 150, 160, 180, 200, and the pixel number threshold is set between 150 and 200, while being able to detect the vast majority of chemical contamination defects, it can also avoid regarding the wafers that meet the product requirements as NG wafers. Since the pixel sizes corresponding to the common chemical contamination defects are all above 200, setting the pixel number threshold between 180 and 200 can not only detect with high precision but also provide a certain error range.

[0067] Example 6 In this example, for the wafers detected in Example 5, the above brightness threshold can be set to 150 Nit, and the pixel number threshold is set to 180 to determine the above detected images. The detection results are as follows Figure 13 , and its detection result is NG, that is, chemical contamination is detected.

[0068] Example 7 In this example, for the wafers detected in Example 5, the above-mentioned brightness threshold can be set to 160 Nit, and the pixel number threshold can be set to 180. The above-mentioned detected images are judged, and the detection results are as follows Figure 14 , and the obtained detection result is NG, that is, chemical contamination is detected, but the size of the detected defect is smaller than the corresponding size when the brightness threshold is set to 150 Nit.

[0069] Example 8 In this example, for the wafers detected in Example 5, the above-mentioned brightness threshold can be set to 180 Nit, and the pixel number threshold can be set to 180. The above-mentioned detected images are judged, and the detection results are as follows Figure 15 , and the obtained detection result is NG, that is, chemical contamination is detected, but the size of the detected defect is smaller than the corresponding size when the brightness threshold is set to 160 Nit.

[0070] Example 9 In this example, for the wafers detected in Example 5, the above-mentioned brightness threshold can be set to 200 Nit, and the pixel number threshold can be set to 180. The above-mentioned detected images are judged, and the detection results are as follows Figure 16 , and the obtained detection result is NG, that is, chemical contamination is detected, but the size of the detected defect is smaller than the corresponding size when the brightness threshold is set to 180 Nit.

[0071] Comparative Example 4 In this example, for the wafers detected in Example 5, the brightness threshold can be set to 300 Nit, and the pixel number threshold can be set to 4000 to detect the wafers in Example 6. The detection results are as follows Figure 17 shown, and the obtained detection result is Pass. That is, when the brightness threshold is set greater than 200, there will be a problem that defects cannot be detected.

[0072] Comparative Example 5 In this example, for the wafers detected in Example 5, the above-mentioned brightness threshold can be set to 80 Nit, and the pixel number threshold can be set to 180. The above-mentioned detected images are judged, and the detection results are as follows Figure 18 , and the obtained detection result is NG, that is, chemical contamination is detected. However, during the detection process, some wafers that meet the requirements will be judged as NG wafers.

[0073] According to the above-mentioned examples and comparative examples, it can be obtained that when the above-mentioned brightness threshold is set between 150 and 200, relatively accurate chemical contamination can be detected. When it is between 150 and 160, relatively complete chemical contamination can be detected. When the brightness threshold is less than 150, some wafers that meet the requirements will be judged as NG wafers. When it is greater than 200, some chemical contaminations cannot be detected.

[0074] In the chemical contamination detection method for the back side of a wafer in the embodiments of the present disclosure, by adjusting the illumination intensity of the light source to the range of 120 Lux to 140 Lux, the chemical contamination on the back side of the wafer can be effectively detected, improving the detection accuracy. Within this illumination intensity range, it can not only ensure the detection of chemical contamination, but also avoid misjudging some wafers that meet the requirements as NG wafers due to excessive illumination. At the same time, setting the brightness threshold to be greater than or equal to 100 Nit and less than or equal to 200 Nit, and setting the size preset to be the pixel quantity threshold, and the pixel quantity threshold being greater than or equal to 150 and less than or equal to 200, can further improve the accuracy of chemical contamination detection.

[0075] Furthermore, the present disclosure also provides a chemical contamination detection system for the back side of a wafer. The system may include a light source providing device, an image acquisition device, and a data processing device. Among them, the light source providing device is used to provide light with an illumination intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to irradiate the back side of the wafer when detecting the back side of the wafer; the image acquisition device is used to acquire the detection image of the wafer; the data processing device is used to determine the chemical contamination on the back side of the wafer according to the detection image.

[0076] In some examples, the above detection system may further include a detection and judgment module. The detection and judgment module may be used to determine whether the detection requirement of the wafer includes the detection of the back side of the wafer, so that when the light source providing device detects the back side, the illumination intensity is adjusted to be 120 Lux and less than or equal to 140 Lux.

[0077] The specific implementation steps of each device in the above system may refer to the chemical contamination detection method for the back side of the wafer, which will not be elaborated here.

[0078] In the above embodiments, the descriptions of each embodiment have their own focuses. For the parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments. The technical features of the above embodiments can be combined arbitrarily. For the sake of concise description, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combinations of these technical features do not conflict, they should all be considered as the scope recorded in this specification.

[0079] Those skilled in the art will readily think of other embodiments of the present disclosure after considering the specification and practicing the invention claimed herein. The present disclosure is intended to cover any variations, uses, or adaptations of the present disclosure, which follow the general principles of the present disclosure and include the common general knowledge or conventional technical means in the technical field not claimed in the present disclosure.

[0080] It should be understood that the present disclosure is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope.

Claims

1. A method for detecting chemical contamination on the back side of a wafer, characterized in that, Including: Irradiating the backside of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image; Determining the chemical contamination on the backside of the wafer according to the detection image.

2. The method according to claim 1, wherein The determining the chemical contamination on the backside of the wafer according to the detection image includes: When there is a region in the detection image with a luminance value greater than a luminance threshold, obtaining the size of the region; When the size is greater than a size threshold, determining that the region includes chemical contamination.

3. The method according to claim 2, wherein The luminance threshold is greater than or equal to 100 Nit and less than or equal to 200 Nit.

4. The method according to claim 2, characterized in that, The luminance threshold is greater than or equal to 150 Nit and less than or equal to 180 Nit.

5. The method according to claim 2, characterized in that, The size includes the number of pixels, and the size threshold includes a pixel number threshold; The pixel number threshold is greater than or equal to 150 and less than or equal to 200.

6. The method according to claim 2, wherein The size includes the number of pixels, and the size threshold includes a pixel number threshold; The pixel number threshold is greater than or equal to 150 and less than or equal to 160.

7. The method according to claim 1, characterized in that The irradiating the backside of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image includes: Irradiating the backside of the wafer with a light source having a light intensity greater than or equal to 130 Lux and less than or equal to 140 Lux to obtain a detection image.

8. The method according to claim 1, wherein The irradiating the backside of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image includes: Determining the detection requirement for the wafer; When the detection requirement includes detecting the backside of the wafer, irradiating the backside of the wafer with a light source having a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to obtain a detection image.

9. A chemical contamination detection system for the back side of a wafer, characterized in that, Including: A light providing device for providing light with a light intensity greater than or equal to 120 Lux and less than or equal to 140 Lux to irradiate the backside of the wafer when detecting the backside of the wafer; An image acquisition device for acquiring the detection image of the wafer; A data processing device for determining the chemical contamination on the backside of the wafer according to the detection image.

10. The chemical contamination detection system for the back side of a wafer according to claim 9, wherein The system further includes: A detection judgment module for determining whether the detection requirement of the wafer includes detecting the backside of the wafer, so that when the light providing device detects the backside, the light intensity is adjusted to be greater than or equal to 120 Lux and less than or equal to 140 Lux.

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