Mask pattern optimization method, medium and program product

Abstract

The invention relates to a mask pattern optimization method, a medium and a program product. The mask pattern optimization method comprises the following steps: acquiring a first mask pattern; respectively setting corresponding evaluation point setting parameters for the first correction mode and the second correction mode; based on an evaluation point setting parameter corresponding to the first correction mode, optimizing a target mask pattern in the first mask plate pattern to obtain an optimized second mask plate pattern; and based on an evaluation point setting parameter corresponding to the second correction mode, optimizing the optimized target mask pattern in the second mask pattern to obtain an optimized third mask pattern. Different evaluation point setting parameters are set in the first correction mode and the second correction mode respectively, and when different correction modes are used, the evaluation points can be set on the edge of the target mask pattern in a targeted manner according to the evaluation point setting parameters corresponding to the correction modes, so that the edge of the target mask pattern is optimized in a targeted manner, and the accuracy of the target mask pattern is improved. And the optimization effect of the mask pattern is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a mask layout optimization method, medium, and program product. Background Art

[0002] With the rapid development of semiconductor technology, it is no longer possible to effectively improve chip functionality by simply improving manufacturing technology. In the manufacturing process of smaller process chips, due to the optical proximity effect (OPE), the exposure quality of the design layout is reduced, resulting in an increase in defects in the exposure results, which directly affects the yield and product performance of the device. Optical proximity correction (OPC), as an effective layout simulation optimization method, uses correction modes with different functions to simulate the exposure of the design layout to obtain a mask that meets the mask inspection rules and the corresponding simulated exposure profile, thereby achieving the optimization purpose. However, in a single correction process, how to further improve the optimization effect and make the optimization results more targeted has become a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0003] In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a mask layout optimization method, medium and program product to improve the optimization effect and make the optimization results more targeted.

[0004] The present disclosure provides a mask layout optimization method, comprising: obtaining a first mask layout;

[0005] Setting corresponding evaluation point setting parameters for the first correction mode and the second correction mode respectively;

[0006] Setting parameters based on the evaluation points corresponding to the first correction mode, optimizing the target mask pattern in the first mask layout, and obtaining an optimized second mask layout;

[0007] Parameters are set based on the evaluation points corresponding to the second correction mode, and the optimized target mask pattern in the second mask layout is optimized to obtain an optimized third mask layout.

[0008] Optionally, the evaluation point setting parameters include evaluation point location parameters, evaluation point quantity parameters, and edge movement amount parameters;

[0009] Parameters are set based on the evaluation points corresponding to the first correction mode, and the target mask pattern in the first mask layout is optimized to obtain an optimized second mask layout, including:

[0010] Place a plurality of first evaluation points on the edge of the target mask pattern based on the evaluation point position parameter and the evaluation point quantity parameter corresponding to the first correction mode;

[0011] Optimize the target mask pattern based on the first evaluation points and the edge movement amount parameter to obtain an optimized second mask layout.

[0012] Optionally, the evaluation point setting parameter further includes an ideal exposure profile calculation parameter;

[0013] Optimizing the target mask pattern based on the first evaluation points and the edge movement amount parameter to obtain an optimized second mask layout includes:

[0014] Generate an ideal exposure profile of the target mask pattern based on the ideal exposure profile calculation parameter;

[0015] Determine the edge placement error of the first evaluation points by projecting the first evaluation points onto the ideal exposure profile;

[0016] Optimize the target mask pattern based on the edge movement amount parameter and the edge placement error;

[0017] Determine whether the optimized target mask pattern needs to continue to be optimized using the first correction mode;

[0018] In the case that the optimized target mask pattern needs to continue to be optimized using the first correction mode, generate an ideal exposure profile of the optimized target mask pattern based on the ideal exposure profile calculation parameter, and continue to execute the step of determining the edge placement error of the first evaluation points by projecting the first evaluation points onto the ideal exposure profile until an optimized second mask layout is obtained.

[0019] Optionally, optimizing the target mask pattern based on the edge movement amount parameter and the edge placement error includes:

[0020] In the case that the edge placement error exceeds the distance threshold range and the value is positive, determine that the edge movement amount parameter is a parameter for constraining the target mask pattern to move a preset displacement amount in the first direction along the edge;

[0021] In the case that the edge placement error exceeds the distance threshold range and the value is negative, determine that the edge movement amount parameter is a parameter for constraining the target mask pattern to move a preset displacement amount in the second direction along the edge;

[0022] Wherein, the first direction represents the direction towards the center of the target mask pattern, and the second direction represents the direction away from the center of the target mask pattern.

[0023] Optionally, the first correction mode includes a global correction mode, and the second correction mode includes a local correction mode;

[0024] Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes:

[0025] When the edge placement errors corresponding to all edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the global correction mode;

[0026] When the edge placement errors corresponding to some edges of the optimized target mask pattern exceed the distance threshold range, determine to optimize the optimized target mask pattern using the local correction mode.

[0027] Optionally, the first correction mode includes the local correction mode;

[0028] Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes:

[0029] When the edge placement errors corresponding to some edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the local correction mode.

[0030] Optionally, the evaluation point setting parameters include edge type parameters;

[0031] Based on the evaluation point position parameters and the evaluation point quantity parameters corresponding to the first correction mode, placing a plurality of first evaluation points on the edges of the target mask pattern includes:

[0032] Based on the evaluation point position parameters and the edge type parameters, determining the placement positions of the first evaluation points on the edges of the target mask pattern;

[0033] Based on the evaluation point quantity parameters, determining the placement quantity of the first evaluation points on the edges of the target mask pattern.

[0034] Optionally, when the first correction mode is the global correction mode, the evaluation point setting parameters corresponding to the global correction mode include: evaluation point position parameters used to represent placing a plurality of first evaluation points on all edges of the target mask pattern;

[0035] When the first correction mode is the local correction mode, the evaluation point setting parameters corresponding to the local correction mode include: evaluation point position parameters used to represent placing a plurality of first evaluation points on some edges of the target mask pattern.

[0036] The present disclosure also provides a computer-readable storage medium, on which computer program instructions are stored. When the computer program instructions are executed by a processor, the above-mentioned arbitrary method is implemented.

[0037] The present disclosure also provides a computer program product. When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device is caused to execute any of the methods described above.

[0038] The present disclosure provides a mask layout optimization method, a medium, and a program product. The mask layout optimization method includes obtaining a first mask layout; respectively setting corresponding evaluation point setting parameters for a first correction mode and a second correction mode; based on the evaluation point setting parameters corresponding to the first correction mode, optimizing a target mask pattern in the first mask layout to obtain an optimized second mask layout; based on the evaluation point setting parameters corresponding to the second correction mode, optimizing the optimized target mask pattern in the second mask layout to obtain an optimized third mask layout. The present disclosure sets different evaluation point setting parameters for different correction modes. During the process of optimizing the first mask layout, first select the corresponding evaluation point setting parameters according to the first correction mode, and set evaluation points on the target mask pattern in the first mask layout according to the evaluation point setting parameters corresponding to the first correction mode, and optimize the first mask layout according to the set evaluation points, so as to obtain the optimized second mask layout. During the process of optimizing the second mask layout using the second correction mode, select the corresponding evaluation point setting parameters according to the second correction mode, and set evaluation points on the target mask pattern in the second mask layout according to the evaluation point setting parameters corresponding to the second correction mode, and optimize the second mask layout according to the set evaluation points, so as to obtain the optimized third mask layout. By respectively setting corresponding evaluation point setting parameters for the first correction mode and the second correction mode, the present disclosure enables different evaluation points to be set on the target mask pattern according to the adopted correction mode when using different correction modes. Therefore, it is possible to perform targeted correction on the correction requirements of different correction modes, so that the optimization result is more targeted and the optimization effect of the mask layout is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly introduced below. Obviously, the following described drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0040] Figure 1 It is a schematic flowchart of a mask layout optimization method provided by an embodiment of the present disclosure.

[0041] Figure 2 It is a schematic diagram of the setting position of break points when a global correction mode is adopted for a target mask pattern provided by an embodiment of the present disclosure.

[0042] Figure 3 Schematic diagram of the breakpoint setting position when a target mask pattern adopts a local correction mode provided by an embodiment of the present disclosure.

[0043] Figure 4 Schematic diagram of a first evaluation point projected onto an ideal exposure profile provided by an embodiment of the present disclosure.

[0044] Figure 5 Schematic diagram of the structure of a mask layout optimization device provided by an embodiment of the present disclosure.

[0045] Figure 6 Schematic diagram of the hardware structure of a mask layout optimization device provided by an embodiment of the present disclosure. Detailed implementation manners

[0046] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In the following detailed description, many specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to those skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is only intended to provide a better understanding of the present application by showing examples of the present application.

[0047] It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variant thereof are intended to cover a non-exclusive inclusion, such that a process, method, article or device including a series of elements not only includes those elements but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device. Without further limitation, elements defined by the statement "including..." do not preclude the existence of additional identical elements in the process, method, article or device including the said elements.

[0048] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The embodiments will be described in detail below with reference to the drawings.

[0049] To solve the above technical problems, embodiments of the present application provide a mask layout optimization method, medium and program product. The mask layout optimization method provided by the embodiments of the present application will be introduced first below.

[0050] Figure 1 Schematic flow diagram of a mask layout optimization method provided by an embodiment of the present disclosure, as Figure 1As shown, the mask layout optimization method includes: S110 to S140.

[0051] S110: Obtain a first mask layout.

[0052] For example, the first mask layout includes multiple mask patterns to be optimized arranged in an array. The mask patterns are specific graphic elements on the mask layout. These patterns are transferred to photoresist on the wafer through a photolithography process, thereby guiding subsequent etching, doping, and other process steps, ultimately forming various microstructures and circuit patterns in the chip. The mask patterns can be polygonal in any shape, such as a rectangle.

[0053] S120 , setting corresponding evaluation point setting parameters for the first correction mode and the second correction mode respectively.

[0054] Exemplarily, the first correction mode and the second correction mode are two different correction modes. For example, the first correction mode can be a global correction mode that corrects all edges of the mask pattern, and the second correction mode can be a local correction mode that corrects at least one edge of the mask pattern, or the first correction mode can be a local correction mode, and the second correction mode can be a global correction mode. Before optimization, different evaluation point setting parameters are set for different correction modes, so that during the optimization process, the corresponding evaluation point setting parameters can be directly determined according to the adopted correction mode, and evaluation points are set on the mask pattern of the mask layout according to the evaluation point setting parameters, and the mask pattern is optimized according to the evaluation points. For example, the first correction mode is a global correction mode, and the second correction mode is a local correction mode. The evaluation point setting parameters corresponding to the first correction mode are used to indicate the placement of evaluation points on all edges of the mask pattern, and the evaluation point setting parameters corresponding to the second correction mode are used to indicate the placement of evaluation points on part of the edges of the mask pattern.

[0055] It should be noted that the first correction mode is a global correction mode and the second correction mode is a local correction mode, or the first correction mode is a local correction mode and the second correction mode is a global correction mode. These are merely examples. The first correction mode and the second correction mode may also be other correction modes in addition to the global correction mode and the local correction mode, and no specific limitation is made here.

[0056] S130 , setting parameters based on the evaluation points corresponding to the first correction mode, optimizing the target mask pattern in the first mask layout, and obtaining an optimized second mask layout.

[0057] Specifically, the target mask pattern in the first mask layout is optimized using the first correction mode. First, the evaluation point setting parameters corresponding to the preset first correction mode are determined according to the first correction mode. According to the evaluation point setting parameters corresponding to the first correction mode, evaluation points are correspondingly set on the target mask pattern in the first mask layout. The edges of the target mask pattern are optimized based on the set evaluation points to obtain the optimized target mask pattern. The mask layout corresponding to the target mask pattern obtained after optimization using the first correction mode is the optimized second mask layout.

[0058] S140. Based on the evaluation point setting parameters corresponding to the second correction mode, the optimized target mask pattern in the second mask layout is optimized to obtain the optimized third mask layout.

[0059] Specifically, the target mask pattern in the second mask layout that has been optimized using the first correction mode is further optimized using the second correction mode. First, the evaluation point setting parameters corresponding to the preset second correction mode are determined according to the second correction mode. According to the evaluation point setting parameters corresponding to the second correction mode, evaluation points are correspondingly set on the optimized target mask pattern in the second mask layout. Finally, the edges of the optimized target mask pattern are further optimized based on the set evaluation points. The mask layout corresponding to the target mask pattern obtained after optimization using the second correction mode is the optimized third mask layout.

[0060] The present disclosure sets different evaluation point setting parameters for different correction modes. During the process of optimizing the first mask layout, the corresponding evaluation point setting parameters are selected according to the first correction mode, and evaluation points are set on the target mask pattern in the first mask layout according to the evaluation point setting parameters corresponding to the first correction mode. The first mask layout is optimized based on the set evaluation points to obtain the optimized second mask layout. During the process of optimizing the second mask layout using the second correction mode, the corresponding evaluation point setting parameters are selected according to the second correction mode, and evaluation points are set on the target mask pattern in the second mask layout according to the evaluation point setting parameters corresponding to the second correction mode. The second mask layout is optimized based on the set evaluation points to obtain the optimized third mask layout. By setting the corresponding evaluation point setting parameters for the first correction mode and the second correction mode respectively, the present disclosure enables different evaluation points to be set on the target mask pattern according to the adopted correction mode when using different correction modes. Therefore, it is possible to perform targeted corrections for the correction requirements of different correction modes, making the optimization result more targeted and improving the optimization effect of the mask layout. Moreover, by using different correction modes to optimize the target mask pattern in the mask layout multiple times, the obtained mask pattern after optimization is more accurate, further improving the optimization effect of the mask layout.

[0061] In some embodiments, the evaluation point setting parameters include an evaluation point position parameter, an evaluation point quantity parameter, and an edge movement quantity parameter.

[0062] The above S130 includes:

[0063] Based on the evaluation point position parameter and the evaluation point quantity parameter corresponding to the first correction mode, a plurality of first evaluation points are placed on the edge of the target mask pattern.

[0064] Exemplarily, the evaluation point quantity parameter ratio is used to indicate the number of evaluation points to be placed, and the evaluation point position parameter is used to indicate the position coordinates of the evaluation points on the edge of the target mask pattern. According to the evaluation point setting parameters corresponding to the first correction mode, the position where the first evaluation points are placed on the edge of the target mask pattern can be determined, and according to the evaluation point quantity parameter corresponding to the first correction mode, the number of the first evaluation points placed on the edge of the target mask pattern can be determined. Thus, the first evaluation points can be placed on the target mask pattern specifically according to the adopted first correction mode.

[0065] Figure 2 The following is a schematic diagram of the break point setting positions when the target mask pattern adopts the global correction mode provided by the embodiments of the present disclosure. As Figure 2 shown, before placing the first evaluation points 102, break points 101 are also set on each edge of the target mask pattern 100, and a plurality of first evaluation points 102 are set at positions between two break points according to the evaluation point position parameter and the evaluation point quantity parameter corresponding to the global correction mode. Thus, a plurality of first evaluation points 102 are placed on all edges of the target mask pattern 100.

[0066] Figure 3 The following is a schematic diagram of the break point setting positions when the target mask pattern adopts the local correction mode provided by the embodiments of the present disclosure. As Figure 3 shown, break points 101 are set on some edges of the target mask pattern 100, and a plurality of first evaluation points 102 are set at positions between two break points according to the evaluation point position parameter and the evaluation point quantity parameter corresponding to the local correction mode. Thus, a plurality of first evaluation points 102 are placed on some edges of the target mask pattern 100.

[0067] It should be noted that Figure 2 and Figure 3 the quantities and positions of the break points 101 and the first evaluation points 102 are only examples and are not specifically limited herein.

[0068] The target mask pattern is optimized based on the first evaluation points and the edge movement quantity parameter to obtain an optimized second mask layout.

[0069] Exemplarily, the edge movement parameter offset is used to indicate the distance by which the edge where the evaluation point is located moves during the optimization process, and the sign of offset can indicate the movement direction of the edge during the optimization process. According to the first evaluation point placed on the target mask pattern, the edge of the target mask pattern that needs to be moved can be determined, and then the edge of the target mask pattern is moved according to the edge movement parameter, thereby obtaining the optimized target mask pattern. The mask layout corresponding to the optimized target mask pattern is the optimized second mask layout.

[0070] The evaluation point setting parameters further include: the first switch parameter enable, which is used to indicate whether other parameters take effect. The threshold parameter band_spec, and the threshold parameter band_spec includes band and band_weight. Band is used to indicate the distance threshold range of the straight-line distance between the evaluation point set on the edge of the target mask pattern and the ideal exposure profile corresponding to the target mask pattern. Band_weight is used to indicate that correction needs to continue after the straight-line distance between the evaluation point on the edge of the target mask pattern and the ideal exposure profile corresponding to the target mask pattern exceeds the distance threshold range. The correction parameter weight is used to indicate whether the edge of the target mask pattern needs to be moved. After the first switch parameter enable indicates that other parameters take effect, it can be determined whether the edge of the target mask pattern needs to be moved to optimize the target mask pattern according to the correction parameter weight. After determining that the target mask pattern needs to be optimized, multiple first evaluation points are placed on the edge of the target mask pattern according to the evaluation point position parameter and the evaluation point number parameter ratio. After the placement of the first evaluation points is completed, the edge where each first evaluation point is located is optimized according to the edge movement parameter offset. After one optimization is completed, it can be determined whether the target mask pattern is optimized according to the threshold parameter band and band_weigh, and the correction parameter weight for the edge where each first evaluation point is located is assigned to indicate whether it is necessary to continue moving the edge where the first evaluation point is located to optimize the target mask pattern.

[0071] The first correction mode is different from the second correction mode. Therefore, the evaluation point position parameter and the evaluation point number parameter corresponding to the first correction mode may also be different from the evaluation point position parameter and the evaluation point number parameter corresponding to the second correction mode. For example, the first correction mode is the global correction mode, and the second correction mode is the local correction mode. The evaluation point position parameter corresponding to the first correction mode can be to place evaluation points on all the edges of the target mask pattern, and the evaluation point setting parameter corresponding to the second correction mode can be to place evaluation points on some of the edges of the target mask pattern. Therefore, the present disclosure can set different evaluation point setting parameters according to different correction modes, making the optimization result more targeted.

[0072] It should be noted that the evaluation point setting parameters corresponding to the first correction mode and the second correction mode can be the same or different. For example, the first correction mode and the second correction mode are the same correction mode, so the evaluation point setting parameters are the same. For example, the first correction mode and the second correction mode are different correction modes, so the evaluation point setting parameters are different. Therefore, the evaluation point setting parameters corresponding to the first correction mode and the second correction mode can be customized according to actual needs and are not specifically limited here.

[0073] In some embodiments, the evaluation point setting parameters further include ideal exposure profile calculation parameters.

[0074] Optimizing the target mask pattern based on the first evaluation point and the edge movement amount parameter, the optimized second mask layout obtained includes:

[0075] Generating an ideal exposure profile of the target mask pattern based on the ideal exposure profile calculation parameter.

[0076] Determining the edge placement error of the first evaluation point by projecting the first evaluation point onto the ideal exposure profile.

[0077] Exemplarily, the ideal exposure profile calculation parameters include a second switch parameter enable_limit_radius, a radius parameter, and a correction threshold parameter.

[0078] The second switch parameter enable_limit_radius is used to indicate the generation of the ideal exposure profile of the target mask pattern.

[0079] The radius parameters include: outcorner_radius parameter, incorner_radius parameter, lineendside_radius parameter, spaceendside_radius parameter, lineend_radius parameter, and spaceend_radius parameter. The outcorner_radius parameter refers to the radius corresponding to the evaluation point that needs to be corrected outward from the position corresponding to the corner parameter. The incorner_radius parameter refers to the radius corresponding to the evaluation point that needs to be corrected inward from the position corresponding to the corner parameter. The lineend_radius parameter refers to the radius corresponding to the evaluation point at the position corresponding to the end parameter. The lineendside_radius parameter refers to the radius corresponding to the evaluation points on both sides of the position corresponding to the end parameter. The spaceend_radius parameter refers to the radius corresponding to the evaluation point at the position corresponding to the zshape parameter. The spaceendside_radius parameter refers to the radius corresponding to the evaluation points on both sides of the position corresponding to the zshape parameter.

[0080] The correction threshold parameters include: outcorner_power parameter, incorner_power parameter, lineendside_power parameter, spaceendside_power parameter, lineend_power parameter, and spaceend_power parameter. The outcorner_power parameter refers to the correction threshold corresponding to the evaluation point that needs to be corrected outside the corresponding position of the corner parameter. The incorner_power parameter refers to the correction threshold corresponding to the evaluation point that needs to be corrected inside the corresponding position of the corner parameter. The lineend_power parameter refers to the correction threshold corresponding to the evaluation point at the corresponding position of the end parameter. The lineendside_power parameter refers to the correction threshold corresponding to the evaluation points on both sides of the corresponding position of the end parameter. The spaceend_power parameter refers to the correction threshold corresponding to the evaluation point at the corresponding position of the zshape parameter. The spaceendside_power parameter refers to the correction threshold corresponding to the evaluation points on both sides of the corresponding position of the zshape parameter.

[0081] For the first evaluation points at each position, according to the values corresponding to the radius parameter and the correction threshold parameter, the coordinate determination formula is used:

[0082]

[0083] Among them, taking any position of the target mask pattern as the origin, x is the abscissa of the first evaluation point projected onto the ideal exposure profile, y is the ordinate of the first evaluation point projected onto the ideal exposure profile, r is the radius value corresponding to the radius parameter, and p is the correction threshold corresponding to the correction threshold parameter.

[0084] When the pattern to be corrected is, for example, a rectangle, when the first evaluation points on the horizontal side of the rectangle are projected, the abscissa remains unchanged. Therefore, the ordinate corresponding to the first evaluation point projected onto the ideal exposure profile can be calculated by substituting it into the coordinate determination formula. When the first evaluation points on the vertical side of the rectangle are projected, the ordinate remains unchanged. Therefore, the abscissa corresponding to the first evaluation point projected onto the ideal exposure profile can be calculated by substituting it into the coordinate determination formula, so that the ideal position of the first evaluation point projected onto the ideal exposure profile can be determined. Figure 4 It is a schematic diagram of projecting the first evaluation point to the ideal exposure profile provided by an embodiment of the present disclosure, as Figure 4As shown, the target mask pattern 100 is, for example, rectangular. When the first evaluation point 102 located on the horizontal side 106 of the target mask pattern 100 is projected, the abscissa remains unchanged, and it is projected longitudinally to the ideal position 104 located on the ideal exposure profile 105. When the first evaluation point 102 located on the vertical side 107 of the target mask pattern 100 moves, the ordinate remains unchanged, and it moves horizontally to the ideal position 104 located on the ideal exposure profile 105. Thus, the first evaluation point 102 is projected to the ideal position 104 located on the ideal exposure profile 105. Furthermore, by calculating the distance between the first evaluation point 102 and the corresponding ideal position 104, the edge placement error of the first evaluation point 102 can be obtained. Continue to refer to Figure 2 , after the target mask pattern 100 is corrected using the global correction mode, the ideal exposure profile 105 corresponding to the global correction mode is obtained. Continue to refer to Figure 3 , after the target mask pattern 100 is corrected using the local correction mode, the ideal exposure profile 105 corresponding to the local correction mode is obtained. Moreover, by calculating the difference between the ordinate of the first evaluation point located on the horizontal side of the rectangle and the ordinate of the corresponding ideal position, or by calculating the difference between the abscissa of the first evaluation point located on the vertical side of the rectangle and the abscissa of the corresponding ideal position, the edge placement error of the first evaluation point can be obtained.

[0085] Optimize the target mask pattern based on the edge movement amount parameter and the edge placement error.

[0086] Specifically, based on the edge placement error, it can be determined whether the edge of the target mask pattern needs to be optimized and the moving direction. Based on the edge movement amount parameter, the moving distance of the edge of the target mask pattern during the optimization process can be determined. Therefore, according to the edge movement amount parameter and the edge placement error, each edge of the target mask pattern that needs to be optimized can be moved, and the moved edges can be reconnected to obtain the optimized target mask pattern.

[0087] Judge whether the optimized target mask pattern needs to continue to be optimized using the first correction mode.

[0088] In the case where the optimized target mask pattern needs to continue to be optimized using the first correction mode, based on the ideal exposure profile calculation parameters, generate the ideal exposure profile of the optimized target mask pattern, and continue to execute the step of determining the edge placement error of the first evaluation point by projecting the first evaluation point to the ideal exposure profile until the optimized second mask layout is obtained.

[0089] Exemplarily, after optimizing the target mask pattern once using the first correction mode, determine the position of the edge of the optimized target mask pattern to determine whether the optimized target mask pattern needs to continue to be optimized using the first correction mode. In the case where the optimized target mask pattern needs to continue to be optimized using the first correction mode, project the first evaluation point on the edge of the optimized target mask pattern onto the ideal exposure profile of the optimized target mask pattern, obtain the corresponding edge placement error, and re-determine whether the re-optimized target mask pattern needs to continue to be optimized using the first correction mode. Repeat the above steps multiple times until the optimized second mask layout is obtained. Thus, the present disclosure optimizes the target mask pattern in the mask layout multiple times using the same correction mode, making the optimized mask pattern more accurate and further improving the optimization effect of the mask layout.

[0090] In some embodiments, optimizing the target mask pattern based on the edge movement amount parameter and the edge placement error includes:

[0091] In the case where the edge placement error exceeds the distance threshold range and the value is positive, determine that the edge movement amount parameter is a parameter for constraining the edge of the target mask pattern to move a preset displacement amount in the first direction.

[0092] Wherein, the first direction represents the direction towards the center of the target mask pattern.

[0093] Exemplarily, the distance threshold range can be, for example, less than 0.5 and greater than -0.5. In the case where the edge placement error corresponding to the edge of the target mask pattern is greater than 0.5, it is determined that the edge placement error exceeds the distance threshold range and the value is positive. It is considered that due to the error in the edge of the target mask pattern after one optimization, the edge does not move to the expected position, and the edge of the target mask pattern needs to continue to move towards the expected position. At this time, determine that the moving direction corresponding to the edge movement amount parameter is the first direction, so that the edge of the target mask pattern continues to move a preset displacement amount in the first direction during the next optimization process.

[0094] In the case where the edge placement error exceeds the distance threshold range and the value is negative, determine that the edge movement amount parameter is a parameter for constraining the edge of the target mask pattern to move a preset displacement amount in the second direction.

[0095] Wherein, the second direction represents the direction away from the center of the target mask pattern.

[0096] Exemplarily, the distance threshold range can be, for example, less than 0.5 and greater than -0.5. When the edge placement error corresponding to the edge of the target mask pattern is less than -0.5, it is determined that the edge placement error exceeds the distance threshold range and the value is negative. It is considered that due to the existing error after the first optimization of the edge of the target mask pattern, the edge exceeds the expected position during the movement process, and it is necessary for the edge of the target mask pattern to move back towards the expected position. At this time, it is determined that the movement direction corresponding to the edge movement amount parameter is the second direction, so that the edge of the target mask pattern moves a preset displacement amount along the second direction during the next optimization process.

[0097] It should be noted that the distance threshold range being less than 0.5 and greater than -0.5 is only an example, and the specific value and unit of the distance threshold range need to be determined according to the actual situation and are not specifically limited here.

[0098] In some embodiments, the first correction mode includes a global correction mode, and the second correction mode includes a local correction mode.

[0099] Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes:

[0100] When the edge placement errors corresponding to all the edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the global correction mode.

[0101] Specifically, after performing a first optimization on the target mask pattern using the global correction mode, the edge placement errors of all the edges of the target mask pattern are obtained and compared with the distance threshold range to determine whether each edge still needs to be optimized. When the edge placement errors corresponding to all the edges of the optimized target mask pattern after the first optimization exceed the distance threshold range, it is determined that all the edges of the optimized target mask pattern have not moved to the expected position, so continue to optimize all the edges of the optimized target mask pattern using the global correction mode.

[0102] When the edge placement errors corresponding to some of the edges of the optimized target mask pattern exceed the distance threshold range, it is determined to optimize the optimized target mask pattern using the local correction mode.

[0103] Specifically, after optimizing the target mask pattern once in the global correction mode, the edge placement errors of all edges of the target mask pattern are obtained, and the edge placement errors are compared with the distance threshold range to determine whether each edge needs to be further optimized. When the edge placement errors corresponding to some edges of the target mask pattern after one optimization all exceed the distance threshold range, it is determined that some edges of the optimized target mask pattern have not moved to the expected position, while some other edges have moved to the expected position. Therefore, these edges do not need to be further optimized. At this time, the global correction mode can be switched to the local correction mode, thereby achieving the optimization of only the part of the edges that have not moved to the expected position.

[0104] In some embodiments, the first correction mode includes the local correction mode.

[0105] Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes:

[0106] When the edge placement errors corresponding to some edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the local correction mode.

[0107] Specifically, after optimizing the target mask pattern once in the local correction mode, the edge placement errors of the optimized part of the edges of the target mask pattern are obtained, and the edge placement errors are compared with the distance threshold range to determine whether the optimized part of the edges still needs to be further optimized.

[0108] When the edge placement errors corresponding to some edges of the target mask pattern after one optimization all exceed the distance threshold range, it is determined that some edges of the optimized target mask pattern have not moved to the expected position after optimization. At this time, continue to optimize this part of the edges using the local correction mode.

[0109] When the edge placement errors corresponding to some edges of the target mask pattern after one optimization meet the distance threshold range, and the edge placement errors corresponding to some other edges of the target mask pattern after one optimization do not meet the distance threshold range, it is determined that some edges of the optimized target mask pattern have moved to the expected position after optimization, while some other edges of the optimized target mask pattern have not moved to the expected position. At this time, continue to optimize the other part of the edges of the optimized target mask pattern using the local correction mode.

[0110] In some embodiments, the evaluation point setting parameter includes the edge type parameter.

[0111] Exemplarily, the edge type parameters include: corner parameter, end parameter, zshape parameter, and run parameter. The corner parameter refers to the vertex position where the included angle between two sides of the target mask pattern is 90°. The end parameter refers to the position of the edge of the target mask pattern that needs to be corrected in the direction away from the center of the target mask pattern. The zshape parameter refers to the position of the edge of the target mask pattern that needs to be corrected in the direction towards the center of the target mask pattern. The run parameter refers to the position of other types of edges except for the positions corresponding to the corner parameter, end parameter, and zshape parameter.

[0112] Based on the evaluation point position parameter and the evaluation point number parameter corresponding to the first correction mode, placing a plurality of first evaluation points on the edges of the target mask pattern includes:

[0113] Determining the placement position of the first evaluation point on the edge of the target mask pattern based on the evaluation point position parameter and the edge type parameter;

[0114] Determining the placement number of the first evaluation point on the edge of the target mask pattern based on the evaluation point number parameter.

[0115] Specifically, according to the edge type parameter, it can be determined that the first evaluation point is placed on the edge of the target mask pattern corresponding to the edge type parameter. According to the evaluation point setting parameter, the coordinates of the first evaluation point on the corresponding type of edge of the target mask pattern can be determined, thereby determining the specific placement position of the first evaluation point on the edge of the target mask pattern. According to the evaluation point number parameter, the number of the first evaluation points placed on the edge of the target mask pattern can be determined. Thus, the first evaluation points can be placed on the target mask pattern targeted according to the adopted first correction mode. Therefore, the target mask pattern can be optimized specifically through the first evaluation points placed on the target mask pattern, and further improve the optimization effect of the mask layout.

[0116] In some embodiments, when the first correction mode is the global correction mode, the evaluation point setting parameter corresponding to the global correction mode includes: an evaluation point position parameter used to represent placing a plurality of first evaluation points on all edges of the target mask pattern.

[0117] In the case where the first correction mode is the local correction mode, the evaluation point setting parameter corresponding to the local correction mode includes: an evaluation point position parameter used to represent placing a plurality of first evaluation points on some edges of the target mask pattern.

[0118] Specifically, the global correction mode is a correction mode for optimizing all the edges of the target mask pattern. Therefore, the evaluation point setting parameter corresponding to the global correction mode is an evaluation point position parameter used to characterize the placement of multiple first evaluation points on all the edges of the target mask pattern. Through the global correction mode, all the edges of the target mask pattern can be optimized simultaneously, so that all the edges of the target mask pattern move according to the global correction mode, thereby obtaining an optimized target mask pattern. The local correction mode is a correction mode for optimizing some of the edges of the target mask pattern. Therefore, the evaluation point setting parameter corresponding to the local correction mode is an evaluation point position parameter used to characterize the placement of multiple first evaluation points on some of the edges of the target mask pattern. Through the local correction mode, some of the edges of the target mask pattern can be optimized, so that some of the edges of the target mask pattern move according to the local correction mode, thereby obtaining an optimized target mask pattern.

[0119] In some embodiments, the mask layout optimization method further includes: when the number of times of optimizing the target mask pattern using the first correction mode exceeds a threshold number of times, switching to the second correction mode to optimize the optimized target mask pattern.

[0120] When the number of times of optimizing the optimized target mask pattern using the second correction mode exceeds the threshold number of times, stop optimizing the optimized target mask pattern.

[0121] Specifically, when the number of times of optimizing the target mask pattern using the first correction mode exceeds the threshold number of times, it is determined that the first correction mode cannot complete the optimization of the target mask pattern, and then switch to the second correction mode to optimize the target mask pattern. When the number of times of optimizing the target mask pattern using the second correction mode exceeds the threshold number of times, it is determined that the second correction mode also cannot complete the optimization of the target mask pattern. Therefore, stop optimizing the target mask pattern.

[0122] In some embodiments, after obtaining the first mask layout, the mask layout optimization method further includes:

[0123] Obtain the boundary point coordinates of the target mask pattern.

[0124] Based on the boundary point coordinates, determine the target mask pattern within the first mask layout.

[0125] Exemplarily, there are multiple mask patterns to be optimized arranged in an array in the mask layout. According to the boundary point coordinates of the target mask pattern, determine the area where the target mask pattern is located, and then obtain the target mask pattern.

[0126] Figure 5 This is a schematic structural diagram of a mask layout optimization device provided by an embodiment of the present disclosure, as Figure 5As shown in the figure, the mask layout optimization device includes: a mask layout acquisition module 210, an evaluation point setting parameter setting module 220, a first optimization module 230, and a second optimization module 240.

[0127] The mask layout acquisition module 210 is configured to acquire a first mask layout.

[0128] The evaluation point setting parameter setting module 220 is configured to respectively set corresponding evaluation point setting parameters for the first correction mode and the second correction mode.

[0129] The first optimization module 230 is configured to optimize the target mask pattern in the first mask layout based on the evaluation point setting parameters corresponding to the first correction mode, so as to obtain an optimized second mask layout.

[0130] The second optimization module 240 is configured to optimize the optimized target mask pattern in the second mask layout based on the evaluation point setting parameters corresponding to the second correction mode, so as to obtain an optimized third mask layout.

[0131] It can be understood that the mask layout optimization device provided in the embodiments of the present application can achieve the corresponding beneficial effects of any of the mask layout optimization methods provided in the above embodiments, which will not be elaborated herein.

[0132] Figure 6 This is a schematic hardware structure diagram of a mask layout optimization device provided in an embodiment of the present disclosure.

[0133] The mask layout optimization device may include a processor 301 and a memory 302 storing computer program instructions.

[0134] Specifically, the above-mentioned processor 301 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0135] The memory 302 may include a mass storage for data or instructions. By way of example and not limitation, the memory 302 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disc, a magneto-optical disc, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. In a suitable case, the memory 302 may include a removable or non-removable (or fixed) medium. In a suitable case, the memory 302 may be inside or outside the optical proximity correction simulation device. In a specific embodiment, the memory 302 is a non-volatile solid-state memory.

[0136] In a particular embodiment, the memory 302 may include a read-only memory (ROM), a random access memory (RAM), a magnetic disk storage media device, an optical storage media device, a flash memory device, an electrical, optical, or other physical / tangible memory storage device. Thus, generally, the memory includes one or more tangible (non-transitory) computer-readable storage media (e.g., memory devices) encoded with software including computer-executable instructions, and when the software is executed (e.g., by one or more processors), it is operable to perform the operations described with reference to the method according to an aspect of the present disclosure.

[0137] The processor 301 reads and executes the computer program instructions stored in the memory 302 to implement any one of the mask layout optimization methods in the above embodiments.

[0138] In one example, the mask layout optimization device may further include a communication interface 303 and a bus 310. Among them, as Figure 6 shown, the processor 301, the memory 302, and the communication interface 303 are connected through the bus 310 and complete communication with each other.

[0139] The communication interface 303 is mainly used to implement communication between each module, device, unit, and / or device in the embodiments of the present application.

[0140] The bus 310 includes hardware, software, or both, and couples the components of the mask layout optimization device to each other. By way of example and not limitation, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Enhanced Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a HyperTransport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a MicroChannel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI-Express (PCI-X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local (VLB) bus, or other suitable buses or a combination of two or more of these. In a suitable case, the bus 310 may include one or more buses. Although the embodiments of the present application describe and illustrate a particular bus, the present application contemplates any suitable bus or interconnect.

[0141] In addition, in combination with the mask layout optimization method in the above embodiments, the embodiments of the present application may be implemented by providing a computer storage medium. Computer program instructions are stored on the computer storage medium; when the computer program instructions are executed by a processor, any one of the mask layout optimization methods in the above embodiments is implemented.

[0142] An embodiment of the present application further provides a computer program product, including a computer program, which when executed by a processor implements any one of the mask layout optimization methods in the above embodiments.

[0143] The above are only specific embodiments of the present disclosure, enabling those skilled in the art to understand or implement the present disclosure. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure will not be limited to these embodiments herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A mask layout optimization method, characterized in that, Including: Obtain a first mask layout; Set corresponding evaluation point setting parameters for the first correction mode and the second correction mode respectively; Optimize the target mask pattern in the first mask layout based on the evaluation point setting parameters corresponding to the first correction mode to obtain an optimized second mask layout; Optimize the optimized target mask pattern in the second mask layout based on the evaluation point setting parameters corresponding to the second correction mode to obtain an optimized third mask layout.

2. The method according to claim 1, characterized in that, The evaluation point setting parameters include an evaluation point position parameter, an evaluation point quantity parameter, and an edge movement quantity parameter; The optimizing the target mask pattern in the first mask layout based on the evaluation point setting parameters corresponding to the first correction mode to obtain an optimized second mask layout includes: Place a plurality of first evaluation points on the edge of the target mask pattern based on the evaluation point position parameter and the evaluation point quantity parameter corresponding to the first correction mode; Optimize the target mask pattern based on the first evaluation points and the edge movement quantity parameter to obtain the optimized second mask layout.

3. The method according to claim 2, wherein The evaluation point setting parameters further include an ideal exposure profile calculation parameter; The optimizing the target mask pattern based on the first evaluation points and the edge movement quantity parameter to obtain the optimized second mask layout includes: Generate an ideal exposure profile of the target mask pattern based on the ideal exposure profile calculation parameter; Determine the edge placement error of the first evaluation points by projecting the first evaluation points onto the ideal exposure profile; Optimize the target mask pattern based on the edge movement quantity parameter and the edge placement error; Determine whether the optimized target mask pattern needs to continue to be optimized using the first correction mode; In the case where the optimized target mask pattern needs to continue to be optimized using the first correction mode, generate an ideal exposure profile of the optimized target mask pattern based on the ideal exposure profile calculation parameter, and continue to execute the step of determining the edge placement error of the first evaluation points by projecting the first evaluation points onto the ideal exposure profile until the optimized second mask layout is obtained.

4. The method according to claim 3, characterized in that, The optimizing the target mask pattern based on the edge movement quantity parameter and the edge placement error includes: In the case where the edge placement error exceeds the distance threshold range and the value is positive, determine that the edge movement quantity parameter is a parameter for constraining the edge of the target mask pattern to move a preset displacement in the first direction; In the case where the edge placement error exceeds the distance threshold range and the value is negative, determine that the edge movement quantity parameter is a parameter for constraining the edge of the target mask pattern to move a preset displacement in the second direction; Wherein, the first direction represents the direction towards the center of the target mask pattern, and the second direction represents the direction away from the center of the target mask pattern.

5. The method according to claim 3, characterized in that The first correction mode includes a global correction mode, and the second correction mode includes a local correction mode; Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes: When the edge placement errors corresponding to all edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the global correction mode; When the edge placement errors corresponding to some edges of the optimized target mask pattern exceed the distance threshold range, determine to optimize the optimized target mask pattern using the local correction mode.

6. The method according to claim 3, wherein The first correction mode includes a local correction mode; Determining whether the optimized target mask pattern needs to continue to be optimized using the first correction mode includes: When the edge placement errors corresponding to some edges of the optimized target mask pattern exceed the distance threshold range, continue to optimize the optimized target mask pattern using the local correction mode.

7. The method according to claim 2, characterized in that, The evaluation point setting parameters include edge type parameters; Based on the evaluation point position parameters and the evaluation point quantity parameters corresponding to the first correction mode, placing a plurality of first evaluation points on the edges of the target mask pattern includes: Based on the evaluation point position parameters and the edge type parameters, determining the placement positions of the first evaluation points on the edges of the target mask pattern; Based on the evaluation point quantity parameters, determining the placement quantity of the first evaluation points on the edges of the target mask pattern.

8. The method according to any one of claims 1-7, characterized in that When the first correction mode is the global correction mode, the evaluation point setting parameters corresponding to the global correction mode include: evaluation point position parameters used to represent placing a plurality of first evaluation points on all edges of the target mask pattern; When the first correction mode is the local correction mode, the evaluation point setting parameters corresponding to the local correction mode include: evaluation point position parameters used to represent placing a plurality of first evaluation points on some edges of the target mask pattern.

9. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the method according to any one of claims 1-8 is implemented.

10. A computer program product, characterized in that, When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device is caused to execute the method according to any one of claims 1-8.

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