Perovskite cell, laminated solar cell, photovoltaic module, photovoltaic power generation system and electric equipment

Abstract

The invention provides a perovskite cell, a laminated solar cell, a photovoltaic module, a photovoltaic power generation system and electric equipment, and belongs to the field of photovoltaic technology. The perovskite cell comprises a hole transport layer and a perovskite light absorption layer, and the hole transport layer comprises a first transport layer. The first transmission layer is made of nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transmission layer is M, and M in the surface layer, facing the perovskite light absorption layer, of the first transmission layer is smaller than 1; the first valence state is larger than or equal to positive trivalence, and the second valence state is positive bivalence. According to the invention, the valence ratio of the nickel element in the surface layer, facing the perovskite light absorption layer, of the hole transport layer made of the nickel oxide material is regulated and controlled, so that the interface defect between the hole transport layer and the perovskite light absorption layer is reduced, and the transmission capability of carriers is improved; therefore, the perovskite cell has high photoelectric energy conversion efficiency and long service life.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, and more specifically, to a perovskite cell, a stacked solar cell, a photovoltaic module, a photovoltaic power generation system, and electrical equipment. Background Art

[0002] Perovskite cells have attracted widespread attention and have great application potential due to their many advantages, such as good optical absorption coefficient, luminescence quantum efficiency, high defect state tolerance, long-range charge transport and low-cost manufacturing process.

[0003] The current photoelectric energy conversion efficiency of perovskite cells is relatively low, which seriously hinders the industrialization of perovskite cells. Summary of the Invention

[0004] In response to the deficiencies in the prior art, the present application provides a perovskite cell, a stacked solar cell, a photovoltaic module, a photovoltaic power generation system and electrical equipment to improve the photoelectric energy conversion efficiency of the perovskite cell.

[0005] In the first aspect, the present application provides a perovskite battery, which includes a hole transport layer and a perovskite light absorption layer, and the hole transport layer includes a first transport layer; the material of the first transport layer includes nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transport layer is M, and M in the surface layer of the first transport layer facing the perovskite light absorption layer is less than 1; wherein the first valence state is ≥ positive trivalent, and the second valence state is positive divalent.

[0006] The perovskite battery provided in the present application has a first transport layer whose material includes nickel oxide. The present application regulates the valence ratio of nickel elements in the surface layer of the first transport layer facing the perovskite light-absorbing layer, so that in the surface layer of the first transport layer facing the perovskite light-absorbing layer, the molar ratio of nickel elements with a valence state of ≥ positive trivalent to nickel elements with a valence of ≥ positive divalent is less than 1, which is beneficial to inhibiting the interface damage between the hole transport layer and the perovskite light-absorbing layer, reducing the interface defects between the hole transport layer and the perovskite light-absorbing layer, and further beneficial to improving the carrier transmission capacity, increasing the current of the perovskite battery, and making the perovskite battery have higher photoelectric energy conversion efficiency and service life.

[0007] In some embodiments, the first transport layer includes at least two sublayers; of two adjacent sublayers, the M of the sublayer closer to the perovskite light absorption layer is smaller than the M of the sublayer farther from the perovskite light absorption layer. This arrangement can create an energy level difference between the two adjacent sublayers, which is beneficial for the transport of hole carriers, thereby facilitating the increase in the current of the perovskite cell and resulting in a higher photoelectric energy conversion efficiency for the perovskite cell.

[0008] In some embodiments, among two adjacent sublayers, the M of the sublayer farthest from the perovskite light absorbing layer is 1 to 2, which is beneficial to the transmission of hole carriers, so that the perovskite battery has a higher photoelectric energy conversion efficiency.

[0009] In some embodiments, among the two adjacent sublayers, the M of the sublayer close to the perovskite light absorbing layer is ≥0.5 and <1; this can reduce the interface defects between the hole transport layer and the perovskite light absorbing layer, thereby facilitating the improvement of the carrier transport capacity, the improvement of the current of the perovskite battery, and the higher photoelectric energy conversion efficiency of the perovskite battery.

[0010] In some embodiments, in two adjacent sublayers, the thickness ratio of the sublayer far from the perovskite light absorbing layer to the thickness ratio of the sublayer close to the perovskite light absorbing layer is (0.8 to 10):1; this is not only conducive to the effective transport of hole carriers, but also can reduce the interface defects between the hole transport layer and the perovskite light absorbing layer, so that the perovskite battery has a higher photoelectric energy conversion efficiency.

[0011] In some embodiments, the thickness of the sublayer away from the perovskite light absorbing layer in two adjacent sublayers is 5 nm to 30 nm, which is conducive to the transmission of hole carriers, so that the perovskite battery has a higher photoelectric energy conversion efficiency.

[0012] In some embodiments, the thickness of the sublayer close to the perovskite light absorbing layer in two adjacent sublayers is 1 nm to 20 nm; this is beneficial to reducing interface defects between the hole transport layer and the perovskite light absorbing layer, so that the perovskite cell has a higher photoelectric energy conversion efficiency.

[0013] In some embodiments, the hole transport layer further includes a second transport layer disposed between the first transport layer and the perovskite light absorbing layer, and the second transport layer is made of a carbon-containing organic compound and its derivatives. The second transport layer can passivate surface defects on the perovskite light absorbing layer, improving the interface energy level matching between the perovskite light absorbing layer and the hole transport layer in the perovskite cell. This helps avoid the hysteresis effect in the perovskite cell, improves carrier transport, and thereby improves the photoelectric energy conversion efficiency of the perovskite cell.

[0014] In some embodiments, the carbon-containing organic compound and its derivatives include at least one of thiophene compounds, carbazole compounds, amino acids, compounds containing phosphate groups, compounds containing carboxylic acid groups, compounds containing sulfonic acid groups, triphenylamine compounds, fluorene compounds, and aromatic compounds. The inclusion of the carbon-containing organic compound and its derivatives in the second transport layer helps avoid the hysteresis effect in perovskite cells and improves the photoelectric energy conversion efficiency of the perovskite cell.

[0015] In some embodiments, the carbon-containing organic compound and its derivatives include at least one of a carbazole compound and a compound containing a phosphate group. The inclusion of the carbon-containing organic compound and its derivatives in the second transport layer helps prevent hysteresis in the perovskite cell and improves the photoelectric energy conversion efficiency of the perovskite cell.

[0016] In some embodiments, the carbon-containing organic compound and its derivatives include at least one of (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid, (2-(9H-carbazol-9-yl)ethyl)phosphonic acid, and poly(2-(9H-carbazol-9-yl)butyl)phosphonic acid. The inclusion of the carbon-containing organic compound and its derivatives in the second transport layer helps avoid the hysteresis effect of the perovskite cell and improves the photoelectric energy conversion efficiency of the perovskite cell.

[0017] In some embodiments, the thickness of the second transport layer is 1 nm to 10 nm; it can improve the interface energy level matching between the perovskite light absorption layer and the hole transport layer in the perovskite cell, which is beneficial to avoid the hysteresis effect of the perovskite cell, improve the carrier transmission capacity, and thus improve the photoelectric energy conversion efficiency of the perovskite cell.

[0018] In some embodiments, the perovskite cell includes a transparent substrate layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer, and an electrode layer arranged in sequence; or, the perovskite cell includes a transparent substrate layer, an electron transport layer, a perovskite light absorbing layer, a hole transport layer, and an electrode layer arranged in sequence.

[0019] In a second aspect, the present application provides a tandem solar cell, which comprises a perovskite cell as provided in any one of the first aspects.

[0020] In a third aspect, the present application provides a photovoltaic module, which includes the perovskite cell provided by any one of the first aspects or the stacked solar cell provided by the second aspect.

[0021] In a fourth aspect, the present application provides a photovoltaic power generation system, which includes a plurality of electrically connected photovoltaic components provided by the third aspect above.

[0022] In a fifth aspect, the present application provides an electrical device, which includes several electrically connected photovoltaic power generation systems provided in the fourth aspect above.

[0023] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to represent the same components. In the drawings:

[0025] Figure 1 A schematic structural diagram of a first perovskite battery provided in some embodiments of the present application;

[0026] Figure 2 A schematic structural diagram of a second perovskite battery provided in some embodiments of the present application;

[0027] Figure 3 A schematic structural diagram of a photovoltaic module provided in some embodiments of the present application.

[0028] icon:

[0029] 1000-PV panels;

[0030] 1100-cell string; 1200-front glass; 1300-front encapsulation film; 1400-back encapsulation film; 1500-back glass;

[0031] 100-perovskite battery;

[0032] 110 - transparent substrate layer; 120 - hole transport layer; 121 - first transport layer; 1211 - sublayer; 122 - second transport layer; 130 - perovskite light absorbing layer; 140 - electron transport layer; 150 - electrode layer. DETAILED DESCRIPTION

[0033] The following embodiments of the technical solution of the present application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only examples and are not intended to limit the scope of protection of the present application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0035] In the description of the embodiments of this application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood to indicate or imply relative importance or implicitly specify the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, the meaning of "plurality" is more than two, unless otherwise clearly and specifically defined.

[0036] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0037] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0038] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0039] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0040] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0041] Solar cells, as green energy sources, are currently seeing increasing market adoption. They are not only used in photovoltaic power generation systems like solar power plants, but are also increasingly being incorporated into electrical devices like electric vehicles. As the application of solar cells continues to expand, market demand is also growing.

[0042] Perovskite cells have become the most widely studied and applied solar cells in recent years due to their many advantages, such as good optical absorption coefficient, luminescence quantum efficiency, high defect state tolerance, long-range charge transport and low-cost manufacturing process.

[0043] Perovskite cells typically include functional layers such as a transparent substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode layer. As a crucial component of perovskite cells, the hole transport layer collects and transports holes, achieving effective electron-hole separation while protecting the perovskite light-absorbing layer from oxygen and water vapor, significantly impacting the efficiency and stability of perovskite cells. The perovskite light-absorbing layer is primarily composed of perovskite materials. When exposed to sunlight, the perovskite light-absorbing layer first absorbs photons to generate electron-hole pairs (excitons). Under the action of the pn junction electric field, the excitons are first separated into electrons and holes and transported to the cathode and anode, respectively. Photogenerated holes flow to the p-region, while photogenerated electrons flow to the n-region. When the circuit is connected, current is generated.

[0044] The material of the hole transport layer can be selected from nickel oxide; however, currently, the photoelectric energy conversion efficiency of perovskite cells with a hole transport layer selected from nickel oxide is relatively low, which seriously hinders the industrialization of perovskite cells. The inventors have found that the reason for the relatively low photoelectric energy conversion efficiency of perovskite cells with a hole transport layer selected from nickel oxide is that the high-valent (≥ positive trivalent) nickel ions in the hole transport layer undergo redox reactions with the A-site cations of the perovskite material (chemical formula ABX3) in the perovskite light-absorbing layer, causing degradation at the interface between the hole transport layer and the perovskite light-absorbing layer, forming a large number of interface defects, resulting in obstruction of carrier transport, resulting in a low current of the perovskite cell, and thus affecting the photoelectric energy conversion efficiency of the perovskite cell.

[0045] Based on the above considerations, in order to suppress the interface damage between the hole transport layer and the perovskite light absorbing layer, reduce the interface defects between the hole transport layer and the perovskite light absorbing layer, and thereby improve the photoelectric energy conversion efficiency of the perovskite cell, the present application designs a perovskite cell, which includes a hole transport layer and a perovskite light absorbing layer, and the hole transport layer includes a first transport layer; the material of the first transport layer includes nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transport layer is M, and M in the surface layer of the first transport layer facing the perovskite light absorbing layer is less than 1; wherein the first valence state is a valence state ≥ positive trivalence, and the second valence state is a positive divalence.

[0046] The perovskite battery provided in the present application has a first transport layer made of a material including nickel oxide. The present application regulates the valence ratio of nickel elements in the surface layer of the first transport layer facing the perovskite light-absorbing layer, so that in the surface layer of the first transport layer facing the perovskite light-absorbing layer, the molar ratio of nickel elements with a valence state of ≥ positive trivalent to nickel elements with a valence of ≥ positive divalent is less than 1, which can reduce the redox reaction of nickel ions with a valence state of ≥ positive trivalent in the hole transport layer and the perovskite material in the perovskite light-absorbing layer, which is beneficial to inhibiting the interface damage between the hole transport layer and the perovskite light-absorbing layer, reducing the interface defects between the hole transport layer and the perovskite light-absorbing layer, and further beneficial to improving the carrier transport capacity and the current of the perovskite battery, so that the perovskite battery (i.e., a formal structure perovskite battery or a trans structure perovskite battery) has a higher photoelectric energy conversion efficiency and the service life of the perovskite battery.

[0047] Hereinafter, the technical solution of the present application will be exemplarily described with reference to embodiments.

[0048] See also Figure 1 and Figure 2 The present application provides a perovskite battery 100, which includes a hole transport layer 120 and a perovskite light absorption layer 130, and the hole transport layer 120 includes a first transport layer 121; the material of the first transport layer 121 includes nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transport layer 121 is M, and M in the surface layer of the first transport layer 121 facing the perovskite light absorption layer 130 is less than 1; wherein the first valence state is a valence state ≥ positive trivalence, and the second valence state is a positive divalence.

[0049] The perovskite cell 100 is a perovskite solar cell, which generally includes functional layers such as a transparent substrate layer 110 , a hole transport layer 120 , a perovskite light absorbing layer 130 , an electron transport layer 140 and an electrode layer 150 .

[0050] The perovskite cell 100 provided in the embodiment of the present application can be a regular structure perovskite cell 100 or a trans structure perovskite cell 100, both of which can improve the device efficiency (i.e., photoelectric energy conversion efficiency) and service life of the corresponding perovskite cell 100.

[0051] See also Figure 1 In the inverse structure perovskite cell 100, the transparent substrate layer 110, the hole transport layer 120, the perovskite light absorbing layer 130, the electron transport layer 140 and the electrode layer 150 are sequentially arranged; see Figure 2 In the formal structure of the perovskite cell 100, the transparent base layer 110, the electron transport layer 140, the perovskite light absorbing layer 130, the hole transport layer 120 and the electrode layer 150 are arranged in sequence.

[0052] In the perovskite cell 100 provided in the embodiment of the present application, in addition to improving the hole transport layer 120 , the specifications and material types of other functional layers can be selected or designed as needed.

[0053] The transparent substrate layer 110 serves as an electrode with high conductivity and high visible light transmittance, and is an output terminal of the perovskite cell 100. The types of the transparent substrate layer 110 include, but are not limited to, FTO (fluorine-doped SnO2 transparent conductive glass), ITO (indium tin oxide transparent conductive glass), AZO (aluminum-doped zinc oxide transparent conductive glass), BZO (benzodiazepine transparent conductive glass), and IZO (indium zinc oxide transparent conductive glass).

[0054] The perovskite light-absorbing layer 130 is the core component of the perovskite battery 100. It is used to absorb the photon energy of sunlight, generate electron-hole pairs, and separate the electron-hole pairs into free electrons and holes under the action of the built-in electric field. The holes are collected by the transparent electrode through the hole transport layer 120, and the electrons are collected by the electrode layer 150. The transparent electrode and the electrode layer 150 are connected to form a circuit to generate photocurrent.

[0055] The chemical formula of the perovskite material in the perovskite light absorbing layer 130 satisfies ABX3, wherein A is an inorganic, organic, or organic-inorganic mixed cation, B is an inorganic, organic, or organic-inorganic mixed cation, and X is an inorganic, organic, or organic-inorganic mixed anion. A is selected from CH3NH3 + (abbreviated as MA + ), CH(NH2) 2+ (abbreviated as FA + )、Li + 、Na + , K + , Rb + and Cs + At least one of; optionally, M is selected from CH3NH3 +、CH(NH2) 2+ and Cs + At least one of. B is selected from Pb 2+ 、Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ and Ni 2+ At least one of; optionally, B is selected from Pb 2+ and Sn 2+ At least one of. X is selected from Cl - Br - and I - At least one of; optionally, X is selected from Cl - Br - and I - At least one of .

[0056] As an example, perovskite materials include but are not limited to CH3NH3PbI3 (abbreviated as MAPbI3), CH(NH2)2PbI3 (abbreviated as FAPbI3), Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 (abbreviated as CsFAMA), at least one of CsPbI3, CsPbI2Br and CsPbIBr2.

[0057] As an example, the band gap of the perovskite light absorbing layer 130 is between 1.20 eV and 2.30 eV. The band gap measurement method includes, for example, obtaining an ultraviolet absorption curve through ultraviolet absorption spectroscopy testing and then calculating the perovskite band gap using the Tauc equation. The thickness of the perovskite light absorbing layer 130 is between 100 nm and 1000 nm, for example, but not limited to, any point value among 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, and 1000 nm, or a range of values between any two thereof; wherein the thickness of the perovskite light absorbing layer 130 refers to the dimension of the perovskite light absorbing layer 130 in the thickness direction of the perovskite cell 100, and the thickness direction of the perovskite cell 100 also refers to the direction in which the functional layers are stacked in sequence.

[0058] The electron transport layer 140 collects electrons or holes generated by photons absorbed by the perovskite light-absorbing layer 130 under illumination, playing an important role in transporting electrons and preventing electron-hole recombination. The electron transport layer 140 plays a crucial role in the perovskite cell 100, and its performance directly impacts the cell's performance.

[0059] The electron transport material used in the electron transport layer 140 is, for example, but not limited to, at least one of an imide compound, a quinone compound, fullerene and its derivatives, a metal oxide, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, and calcium fluoride. The metal element in the metal oxide used in the electron transport material includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr. As an example, the electron transport material is selected from at least one of bathocuproine, [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene C60, and fullerene C70.

[0060] As an example, the thickness of the electron transport layer 140 is, for example, 5 nm to 200 nm.

[0061] The electrode layer 150 serves as the other output terminal of the perovskite cell 100. The electrode layer 150 is composed of an organic, inorganic, or organic-inorganic hybrid conductive material. The conductive material is at least one of an organic conductive material and an inorganic conductive material. The organic conductive material may be a conductive polymer, including but not limited to at least one of polyethylenedioxythiophene (PEDOT), polythiophene, and polyacetylene. The inorganic conductive material includes but is not limited to at least one of a transparent conductive oxide, a metal, and a carbon derivative. Specific examples of the inorganic conductive material include Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.

[0062] As an example, the thickness of the electrode layer 150 is, for example, 10 nm to 1000 nm.

[0063] The hole transport layer 120 is an important component of the perovskite cell 100. Its main function is to collect and transport holes to achieve effective separation of electrons and holes, while protecting the perovskite light absorption layer 130 from erosion by oxygen and water vapor, which has an important impact on the efficiency and stability of the perovskite cell 100.

[0064] In the present application, the hole transport layer 120 includes a first transport layer 121; the material of the first transport layer 121 includes nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transport layer 121 is M, and M in the surface layer of the first transport layer 121 facing the perovskite light absorption layer 130 is less than 1; wherein the first valence state is a valence state ≥ positive trivalence, and the second valence state is a positive divalence.

[0065] Here, nickel oxide refers to a compound containing only nickel and oxygen elements.

[0066] It should be noted that the "molar ratio M of the nickel element in the first valence state to the nickel element in the second valence state" in the first transport layer 121 can be analyzed and determined by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The steps for determining the M value in the first transport layer 121 are as follows: TOF-SIMS is used to test the thickness of each film layer in the first transport layer 121 in the perovskite battery 100 to be tested, and the test conditions are in a vacuum state. When a significant signal change appears in the spectrum of the TOF-SIMS test results, the scanning thickness value corresponding to the significant signal change is the thickness value of a film layer in the first transport layer 121. In this way, the thickness of each film layer in the first transport layer 121 is confirmed in turn. Then, X-ray photoelectron spectroscopy is used to measure the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in different film layers in the first transport layer 121, and the test conditions are in a vacuum state.

[0067] As an example, the first valence state may be positive trivalence or positive tetravalence.

[0068] The present application regulates the valence ratio of nickel elements in the surface layer of the first transport layer 121 facing the perovskite light absorbing layer 130, so that in the surface layer of the first transport layer 121 facing the perovskite light absorbing layer 130, the molar ratio of nickel elements with a valence state of ≥ positive trivalent to nickel elements with a valence of ≥ positive divalent is less than 1, which can reduce the redox reaction of nickel ions with a valence state of ≥ positive trivalent in the hole transport layer 120 and the perovskite material in the perovskite light absorbing layer 130, which is beneficial to inhibiting the interface damage between the hole transport layer 120 and the perovskite light absorbing layer 130, reducing the interface defects between the hole transport layer 120 and the perovskite light absorbing layer 130, and thus helping to improve the carrier transport capacity and the current of the perovskite battery 100, so that the perovskite battery 100 (i.e., the formal structure perovskite battery 100 or the trans structure perovskite battery 100) has a higher photoelectric energy conversion efficiency and service life.

[0069] In some embodiments, the first transport layer 121 includes at least two sublayers 1211; of two adjacent sublayers 1211, the M of the sublayer 1211 closer to the perovskite light absorption layer 130 is smaller than the M of the sublayer 1211 farther from the perovskite light absorption layer 130. This configuration can create an energy level difference between the two adjacent sublayers 1211, which is beneficial for the transport of hole carriers, thereby increasing the current of the perovskite cell 100 and enabling the perovskite cell 100 to have a higher photoelectric energy conversion efficiency.

[0070] This application does not limit the number of sublayers 1211 in the first transmission layer 121, and the number can be 2, 3 or more.

[0071] In some embodiments, among two adjacent sublayers 1211, the M of the sublayer 1211 away from the perovskite light absorbing layer 130 is 1 to 2; the above method is conducive to the transmission of hole carriers, increases the current of the perovskite battery 100, and enables the perovskite battery 100 to have a higher photoelectric energy conversion efficiency.

[0072] In some embodiments, of the two adjacent sublayers 1211, the M of the sublayer 1211 close to the perovskite light absorbing layer 130 is ≥0.5 and <1; the above method can reduce the interface defects between the hole transport layer 120 and the perovskite light absorbing layer 130, thereby helping to improve the carrier transmission capacity, increase the current of the perovskite battery 100, and enable the perovskite battery 100 to have a higher photoelectric energy conversion efficiency.

[0073] As an example, in two adjacent sublayers 1211, the molar ratio M of the nickel element in the first valence state to the nickel element in the second valence state in the sublayer 1211 far away from the perovskite light absorbing layer 130 can be any point value among 1.1, 1.2, 1.5, 1.7, 1.9 and 2.0, or a range value between any two of them; in two adjacent sublayers 1211, the molar ratio M of the nickel element in the first valence state to the nickel element in the second valence state in the sublayer 1211 close to the perovskite light absorbing layer 130 can be any point value among 0.5, 0.6, 0.7, 0.8, 0.9, 0.92 and 0.98, or a range value between any two of them.

[0074] In some embodiments, the first transport layer 121 has two sublayers 1211, the M of the sublayer 1211 away from the perovskite light absorption layer 130 is greater than 1 and ≤ 2.0, and the M of the sublayer 1211 close to the perovskite light absorption layer 130 is greater than or equal to 0.5 and less than 1; the above method can not only make the two adjacent sublayers 1211 have an energy level difference, which is beneficial to the transmission of hole carriers, but also reduce the interface defects between the hole transport layer 120 and the perovskite light absorption layer 130, thereby helping to improve the carrier transmission capacity, increase the current of the perovskite battery 100, and make the perovskite battery 100 have a higher photoelectric energy conversion efficiency.

[0075] In some embodiments, in two adjacent sublayers 1211, the thickness ratio of the sublayer 1211 far away from the perovskite light absorbing layer 130 to the thickness ratio of the sublayer 1211 close to the perovskite light absorbing layer 130 is (0.8~10):1; the above method is not only conducive to the effective transmission of hole carriers, but also can reduce the interface defects between the hole transport layer 120 and the perovskite light absorbing layer 130, so that the perovskite battery 100 has a higher photoelectric energy conversion efficiency.

[0076] As an example, in two adjacent sub-layers 1211, the thickness ratio of the sub-layer 1211 far away from the perovskite light absorbing layer 130 to the thickness ratio of the sub-layer 1211 close to the perovskite light absorbing layer 130 can be any value among 0.8:1, 1:1, 2:1, 3:1, 5:1, 7:1 and 10:1 or a range value between any two of them.

[0077] Furthermore, in some embodiments, in two adjacent sublayers 1211, the thickness ratio of the sublayer 1211 far from the perovskite light absorbing layer 130 to the thickness ratio of the sublayer 1211 close to the perovskite light absorbing layer 130 is (1 to 10):1, which is beneficial to further improve the transport capacity of hole carriers.

[0078] In some embodiments, the first transport layer 121 has two sublayers 1211, and the thickness ratio of the sublayer 1211 away from the perovskite light absorption layer 130 to the thickness ratio of the sublayer 1211 close to the perovskite light absorption layer 130 is (0.8 to 10):1; the above method is not only conducive to the effective transmission of hole carriers, but also can reduce the interface defects between the hole transport layer 120 and the perovskite light absorption layer 130, so that the perovskite battery 100 has a higher photoelectric energy conversion efficiency.

[0079] In some embodiments, of the two adjacent sublayers 1211 , the thickness of the sublayer 1211 away from the perovskite light absorbing layer 130 is 5 nm to 30 nm. The above method is conducive to the transmission of hole carriers, so that the perovskite cell 100 has a higher photoelectric energy conversion efficiency.

[0080] As an example, in two adjacent sub-layers 1211, the thickness of the sub-layer 1211 away from the perovskite absorption layer 130 can be any point value among 5nm, 7nm, 8.9nm, 10nm, 12nm, 15nm, 17nm, 18.2nm, 20nm, 25nm and 30m, or a range value between any two of them.

[0081] In some embodiments, of the two adjacent sublayers 1211, the thickness of the sublayer 1211 close to the perovskite light absorbing layer 130 is 1 nm to 20 nm; this is beneficial in reducing interface defects between the hole transport layer 120 and the perovskite light absorbing layer 130, so that the perovskite cell 100 has a higher photoelectric energy conversion efficiency.

[0082] As an example, in two adjacent sub-layers 1211, the thickness of the sub-layer 1211 close to the perovskite absorption layer 130 can be any value among 1nm, 1.8nm, 2nm, 3nm, 5nm, 8nm, 10nm, 11.1nm, 12nm, 15nm, and 20nm, or a range of values between any two of them.

[0083] In some embodiments, the first transport layer 121 has two sublayers 1211, the thickness of the sublayer 1211 away from the perovskite light absorbing layer 130 is 5nm to 30nm, and the thickness of the sublayer 1211 close to the perovskite light absorbing layer 130 is 1nm to 20nm; the above method is not only conducive to the transmission of holes, but also can reduce the interface defects between the hole transport layer 120 and the perovskite light absorbing layer 130, so that the perovskite battery 100 has a higher photoelectric energy conversion efficiency.

[0084] In some embodiments, the hole transport layer 120 further includes a second transport layer 122 . The second transport layer 122 is disposed between the first transport layer 121 and the perovskite light absorption layer 130 . The material of the second transport layer 122 includes carbon-containing organic matter and its derivatives.

[0085] It can be understood that, since the second transport layer 122 is a part of the hole transport layer 120 , the material in the second transport layer 122 has the ability to transport hole carriers.

[0086] Because the perovskite light-absorbing layer 130 is a polycrystalline thin film, its surface inevitably contains numerous defects, primarily uncoordinated ions and dangling bonds at grain boundaries and crystal surfaces. These surface defects in the perovskite light-absorbing layer 130 can cause hysteresis in the perovskite cell 100.

[0087] The hysteresis effect refers to the presence of a certain lag between the output current of the perovskite cell 100 and the input light intensity. Specifically, when light intensity changes from low to high, the output current of the perovskite cell 100 does not immediately follow the change, but rather there is a certain delay. This phenomenon results in a certain nonlinear relationship between the output current of the perovskite cell 100 and the input light intensity, thereby affecting the performance and efficiency of the solar cell.

[0088] In the present application, by providing a second transmission layer 122 between the first transmission layer 121 and the perovskite light absorption layer 130, defects on the surface of the perovskite light absorption layer 130 can be passivated, thereby improving the interface energy level matching between the perovskite light absorption layer 130 and the hole transport layer 120 in the perovskite cell 100, which is beneficial to avoiding the hysteresis effect of the perovskite cell 100, improving the carrier transmission capacity, and improving the photoelectric energy conversion efficiency of the perovskite cell 100.

[0089] In some embodiments, the carbon-containing organic matter and its derivatives include at least one of thiophene compounds, carbazole compounds, amino acids, compounds containing phosphate groups, compounds containing carboxylic acid groups, compounds containing sulfonic acid groups, triphenylamine compounds, fluorene compounds, and aromatic compounds. The carbon-containing organic matter and its derivatives in the second transmission layer 122 include the above substances, which helps prevent the hysteresis effect of the perovskite cell 100 and improve the photoelectric energy conversion efficiency of the perovskite cell 100.

[0090] In some embodiments, the conductive material containing carbon elements includes at least one of 2,2',7,7'-tetrakis(N,N-p-anisyl)-9,9'-spirobifluorene, methoxytriphenylamine-fluoroformamidine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene):polystyrenesulfonic acid, poly3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, polythiophene, phosphate-based monomers, carboxylic acid-based monomers, carbazole-based monomers, sulfonic acid-based monomers, triphenylamine-based monomers, aromatic monomers, and amino acids.

[0091] In some embodiments, the carbon-containing organic compound and its derivatives include at least one of a carbazole compound and a compound containing a phosphate group. The carbon-containing organic compound and its derivatives in the second transmission layer 122 include the aforementioned substances, which helps prevent the hysteresis effect in the perovskite cell 100 and improve the photoelectric energy conversion efficiency of the perovskite cell 100.

[0092] Furthermore, in some embodiments, the conductive material containing carbon elements includes at least one of (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (i.e., Me-4PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (i.e., 2PACz), and poly(2-(9H-carbazole-9-yl)butyl)phosphonic acid (i.e., poly-4PACz).

[0093] In some embodiments, the thickness of the second transport layer 122 is 1 nm to 10 nm. The above method can improve the interface energy level matching between the perovskite light absorption layer 130 and the hole transport layer 120 in the perovskite cell 100, which is beneficial to avoid the hysteresis effect of the perovskite cell 100, improve the carrier transmission capacity, and thereby improve the photoelectric energy conversion efficiency of the perovskite cell 100.

[0094] As an example, the thickness of the second transmission layer 122 can be any value among 1 nm, 2 nm, 5 nm, 7 nm, 9 nm and 10 nm, or a range of values between any two of them.

[0095] As an example, when a second transport layer 122 is arranged between the first transport layer 121 and the perovskite light absorbing layer 130, the inverted-structured perovskite battery 100 includes a transparent substrate layer 110, a hole transport layer 120 (the first transport layer 121 and the second transport layer 122 are arranged in sequence), a perovskite light absorbing layer 130, an electron transport layer 140 and an electrode layer 150 arranged in sequence; the formal-structured perovskite battery 100 includes a transparent substrate layer 110, an electron transport layer 140, a perovskite light absorbing layer 130, a hole transport layer 120 (the second transport layer 122 and the first transport layer 121 are arranged in sequence) and an electrode layer 150.

[0096] Based on the above embodiment, the preparation process of the inverted perovskite cell 100 exemplarily includes:

[0097] Step 1: Clean the transparent base layer 110 and blow dry it for later use;

[0098] Step 2: preparing a hole transport layer 120 on the transparent substrate layer 110 for standby use; specifically, the steps of preparing the hole transport layer 120 include: first preparing a first transport layer 121 (including at least two sublayers 1211) on the transparent substrate layer 110, and then preparing a second transport layer 122 on the first transport layer 121;

[0099] Step 3: Prepare a perovskite light absorbing layer 130 on the hole transport layer 120 for later use;

[0100] Step 4: Prepare an electron transport layer 140 on the perovskite light absorbing layer 130 for later use;

[0101] Step 5: Prepare the electrode layer 150 on the electron transport layer 140 and perform edge cleaning test.

[0102] In some embodiments, the second transport layer 122 may not be prepared when preparing the hole transport layer 120 . Instead, the first transport layer 121 of the hole transport layer 120 may be prepared, and then the perovskite light absorbing layer 130 may be directly prepared on the first transport layer 121 .

[0103] The preparation process of the formal structure perovskite cell 100 exemplarily includes:

[0104] Step 1: Clean the transparent base layer 110 and blow dry it for later use;

[0105] Step 2: preparing an electron transport layer 140 on the transparent substrate layer 110 for later use;

[0106] Step 3: Prepare a perovskite light absorbing layer 130 on the electron transport layer 140 for later use;

[0107] Step 4: preparing a hole transport layer 120 on the perovskite light absorption layer 130 for standby use; specifically, the steps of preparing the hole transport layer 120 include: first preparing a second transport layer 122 on the perovskite light absorption layer 130, and then preparing a first transport layer 121 (including at least two sublayers 1211) on the second transport layer 122;

[0108] Step 5: Prepare the electrode layer 150 on the hole transport layer 120 and perform edge cleaning test.

[0109] In some embodiments, when preparing the hole transport layer 120 , the second transport layer 122 may not be prepared, but the first transport layer 121 may be directly prepared on the perovskite light absorption layer 130 .

[0110] In this embodiment, the transparent substrate layer 110 , the hole transport layer 120 , the perovskite light absorbing layer 130 , the electron transport layer 140 and the electrode layer 150 have a suitable arrangement order, which facilitates the formation of each layer structure and makes the process convenient.

[0111] It can be understood that the preparation methods of the above-mentioned layers include but are not limited to chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation co-evaporation, atomic layer deposition, magnetron sputtering, precursor coating, precursor slit coating, precursor scraping, etc., and those skilled in the art can make a choice according to actual needs. In addition to the above-mentioned setting method, a mechanical pressing method can also be used to form at least two interconnected functional layers at one time.

[0112] Optionally, each layer is prepared by a thermal evaporation method or a precursor liquid coating method, wherein the precursor liquid coating method can be a spin coating method.

[0113] As an example, the method of the inverted structure perovskite battery 100 includes: depositing a first transport layer 121 (including at least two sublayers 1211) on the surface of the transparent substrate layer 110 by a magnetron sputtering method; spin-coating a second transport layer 122 slurry on the surface of the hole transport layer 120 at a rotation speed of 4000 rpm to 5500 rpm, and then drying it on a constant temperature hot stage at, for example, 100 to 200 ° C to obtain the second transport layer 122; spin-coating a perovskite light absorbing layer 130 slurry on the surface of the second transport layer 122 at a rotation speed of 3000 rpm to 4500 rpm, and then drying it on a constant temperature hot stage at, for example, 100 to 200 ° C to obtain the perovskite light absorbing layer 130; then using a vacuum evaporation method, in a vacuum hot evaporation equipment, at 4×10 4 Pa vacuum conditions, the electron transport layer 140 is deposited on the surface of the perovskite light absorbing layer 130; and then in a vacuum coating machine, at 5×10 4 Under a vacuum condition of 0.04 Pa, the electrode layer 150 is evaporated on the surface of the electron transport layer 140 .

[0114] As an example, the method of forming the formal structure of the perovskite cell 100 includes: using a vacuum evaporation method, in a vacuum thermal evaporation device, at 4×10 4 Pa, deposit an electron transport layer 140 on the surface of the transparent substrate layer 110; spin-coat the perovskite light absorbing layer 130 slurry on the surface of the electron transport layer 140 at a rotation speed of 3000 rpm to 4500 rpm, and then dry it on a constant temperature hot stage at, for example, 100 to 200° C. to obtain the perovskite light absorbing layer 130; spin-coat the second transport layer 122 slurry on the surface of the perovskite light absorbing layer 130 at a rotation speed of 4000 rpm to 5500 rpm, and then dry it on a constant temperature hot stage at, for example, 100 to 200° C. to obtain the second transport layer 122; deposit the first transport layer 121 (including at least two sublayers 1211) on the surface of the second transport layer 122 by a magnetron sputtering method; then, in a vacuum coating machine, at 5×10 4 Under a vacuum condition of 1.5 Pa, the electrode layer 150 is evaporated on the surface of the first transmission layer 121 .

[0115] According to some embodiments of the present application, the present application also provides a stacked solar cell, which includes the perovskite cell 100 provided by any of the above solutions.

[0116] See also Figure 3 According to some embodiments of the present application, the present application also provides a photovoltaic module 1000, which includes the perovskite cell 100 provided by any of the above solutions.

[0117] Photovoltaic module 1000 refers to a solar cell module, i.e., an integrated assembly comprising multiple perovskite cells 100. This assembly includes multiple cell strings 1100, each of which comprises multiple perovskite cells 100 connected in series via connectors such as solder ribbons. The term "several" refers to an integer of one, two, or more.

[0118] In the photovoltaic module 1000, in addition to the cell string 1100, it can also include front glass 1200, front packaging film 1300, back packaging film 1400, back glass 1500, etc. As an example, the photovoltaic module 1000 includes the front glass 1200, the front packaging film 1300, the cell string 1100, the back packaging film 1400 and the back glass 1500 stacked in sequence along the thickness direction.

[0119] According to some embodiments of the present application, the present application further provides a photovoltaic assembly 1000, which includes the stacked solar cell provided above.

[0120] According to some embodiments of the present application, the present application further provides a photovoltaic power generation system, which includes a plurality of electrically connected photovoltaic components 1000 .

[0121] Several refers to a number of one, two or more integers.

[0122] Photovoltaic power generation system refers to a power generation system that uses the photovoltaic effect to directly convert solar radiation energy into electrical energy. It is divided into a stand-alone photovoltaic power generation system (Stand alone PV System) and a grid-connected photovoltaic power generation system (Grid connected PV System). The stand-alone photovoltaic power generation system consists of a solar photovoltaic array consisting of 1000 photovoltaic modules, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc. The grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter) and a system monitoring part.

[0123] According to some embodiments of the present application, the present application further provides an electrical device, which includes the photovoltaic power generation system provided by the above solution, and the photovoltaic power generation system is used to provide electrical energy to the electrical device.

[0124] Electrical equipment can be in various forms, such as electric cars, ships, spacecraft, solar water heaters, solar energy, etc.

[0125] The power supply method for the electrical equipment can be solely powered by the photovoltaic module 1000, or it can be powered by the photovoltaic module 1000 and the energy storage battery. That is, the electrical equipment is equipped with both the photovoltaic module 1000 and the energy storage battery. The energy storage battery is not limited to primary batteries and secondary batteries, and can be, for example, but not limited to, lithium-ion secondary batteries and sodium-ion secondary batteries.

[0126] Next, one or more embodiments will be described in more detail with reference to the following examples. Of course, these examples do not limit the scope of one or more embodiments.

[0127] Example 1

[0128] like Figure 1 The perovskite cell 100 shown in FIG. 1 includes the following steps:

[0129] (1) Preparation of transparent base layer 110:

[0130] The surface of FTO conductive glass with a size of 2.0 cm×2.0 cm was cleaned twice with acetone and isopropyl alcohol in sequence, immersed in deionized water for ultrasonic treatment for 10 minutes, dried in a forced air drying oven, and placed in a glove box (N2 atmosphere) to serve as the transparent base layer 110.

[0131] (2) Preparation of hole transport layer 120:

[0132] Preparation of the first transmission layer 121: Two sublayers 1211 made of nickel oxide are deposited in sequence on the surface of the transparent base layer 110 by magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent and nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1.5:1 and 0.9:1 respectively, and the thicknesses of the two sublayers 1211 are 15nm and 5nm respectively.

[0133] Preparation of the second transport layer 122: A 0.5 mg / mL Me-4PACz isopropanol solution was spin-coated on the obtained first transport layer 121 at a speed of 5000 rpm. The layer was then moved to a constant temperature hot plate and heated at 100°C for 10 minutes to form a second transport layer 122 with a thickness of 2 nm.

[0134] (3) Preparation of perovskite light absorbing layer 130:

[0135] A 1.5 mol / L FAPbI3 mixed DMF solution was spin-coated on the obtained hole transport layer 120 at a speed of 4000 rpm, and then moved to a constant temperature hot stage and heated at 100°C for 30 minutes. After cooling to room temperature, a perovskite light absorption layer 130 with a thickness of 500 nm was formed.

[0136] (4) Preparation of electron transport layer 140:

[0137] The device prepared above was placed in a vacuum thermal evaporation device and vacuumed to 4×10 -4 Pa, a material C is deposited on the surface of the perovskite light absorbing layer 130 with a thickness of 30 nm. 60 The electron transport layer 140 is formed.

[0138] (5) Preparation of electrode layer 150:

[0139] The device prepared above was placed in a vacuum coating machine and -4 Under a vacuum condition of 0.04 Pa, a Cu electrode was evaporated on the surface of the electron transport layer 140 at a deposition rate of 0.1 Å / s to form an electrode layer 150 with a thickness of 80 nm.

[0140] Example 2

[0141] The difference between Example 2 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 2, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1:1 and 0.9:1, respectively, and the thicknesses of the two sublayers 1211 are 15 nm and 5 nm, respectively.

[0142] Example 3

[0143] The difference between Example 3 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 3, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 2:1 and 0.9:1, respectively, and the thicknesses of the two sublayers 1211 are 15 nm and 5 nm, respectively.

[0144] Example 4

[0145] The difference between Example 4 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 4, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1.5:1 and 0.98:1, respectively. The thicknesses of the two sublayers 1211 are 15 nm and 5 nm, respectively.

[0146] Example 5

[0147] The difference between Example 5 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 5, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1.5:1 and 0.5:1, respectively, and the thicknesses of the two sublayers 1211 are 15 nm and 5 nm, respectively.

[0148] Example 6

[0149] The difference between Example 6 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 6, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1.5:1 and 0.9:1, respectively. The thicknesses of the two sublayers 1211 are 8.9 nm and 11.1 nm, respectively.

[0150] Example 7

[0151] The difference between Example 7 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 7, the preparation steps of the first transmission layer 121 are as follows: two sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the two sublayers 1211 are 1.5:1 and 0.9:1, respectively. The thicknesses of the two sublayers 1211 are 18.2 nm and 1.8 nm, respectively.

[0152] Example 8

[0153] The difference between Example 8 and Example 1 is that the preparation steps of the first transmission layer 121 in step (2) are different. In Example 8, the preparation steps of the first transmission layer 121 are as follows: three sublayers 1211 made of nickel oxide are sequentially deposited on the surface of the transparent base layer 110 using a magnetron sputtering method, and the molar ratios of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the three sublayers 1211 are 1.5:1, 0.9:1, and 0.7:1, respectively. The thicknesses of the two sublayers 1211 are 15 nm, 3 nm, and 2 nm, respectively.

[0154] Example 9

[0155] The difference between Example 9 and Example 1 is that FAPbI3 in step (3) of Example 1 is replaced by CsFAPbI3.

[0156] Example 10

[0157] The difference between Example 10 and Example 1 is that Me-4PACz in step (2) of Example 1 is replaced by poly-4PACz.

[0158] Example 11

[0159] The difference between Example 11 and Example 1 is that the second transmission layer 122 is not prepared in step (2) of Example 11.

[0160] Comparative Example 1

[0161] The difference between Comparative Example 1 and Example 1 is that step (2) is different. In Comparative Example 1, the second transmission layer 122 is not prepared. Step (2) of Comparative Example 1 is as follows:

[0162] Preparation of the first transmission layer 121: A sublayer 1211 made of nickel oxide is deposited on the surface of the transparent base layer 110 by magnetron sputtering. The molar ratio of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the sublayer 1211 is 1.5:1, and the thickness of the sublayer 1211 is 20 nm.

[0163] Comparative Example 2

[0164] The difference between Comparative Example 2 and Example 9 is that step (2) is different. In Comparative Example 2, the second transmission layer 122 is not prepared. Step (2) of Comparative Example 2 is as follows:

[0165] Preparation of the first transmission layer 121: A sublayer 1211 made of nickel oxide is deposited on the surface of the transparent base layer 110 by magnetron sputtering. The molar ratio of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the sublayer 1211 is 1.5:1, and the thickness of the sublayer 1211 is 20 nm.

[0166] Comparative Example 3

[0167] The difference between Comparative Example 3 and Example 1 is that step (2) is different; in Comparative Example 3, step (2) is as follows:

[0168] Preparation of the first transmission layer 121: A sublayer 1211 made of nickel oxide is deposited on the surface of the transparent base layer 110 by magnetron sputtering. The molar ratio of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the sublayer 1211 is 1.5:1, and the thickness of the sublayer 1211 is 20 nm.

[0169] Preparation of the second transport layer 122: A 0.5 mg / mL Me-4PACz isopropanol solution was spin-coated on the obtained first transport layer 121 at a speed of 5000 rpm. The layer was then moved to a constant temperature hot plate and heated at 100°C for 10 minutes to form a second transport layer 122 with a thickness of 2 nm.

[0170] Comparative Example 4

[0171] The difference between Comparative Example 4 and Example 1 is that step (2) is different; in Comparative Example 4, step (2) is as follows:

[0172] Preparation of the first transmission layer 121: A sublayer 1211 made of nickel oxide is deposited on the surface of the transparent base layer 110 by magnetron sputtering. The molar ratio of nickel elements with a valence state ≥ positive trivalent to nickel elements with a valence state of positive divalent in the sublayer 1211 is 1.5:1, and the thickness of the sublayer 1211 is 20 nm.

[0173] Preparation of the second transport layer 122: A 0.5 mg / mL poly-4PACz isopropanol solution was spin-coated on the obtained first transport layer 121 at a speed of 5000 rpm. The layer was then moved to a constant temperature hot plate and heated at 100°C for 10 minutes to form a second transport layer 122 with a thickness of 2 nm.

[0174] The differences between Examples 1 to 11 and Comparative Examples 1 to 4 are shown in Table 1.

[0175] Table 1 Parameters of perovskite cells

[0176]

[0177]

[0178] In Table 1, “A value” refers to the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the sublayer of the first transport layer, wherein the first valence state is a valence state ≥ positive trivalence and the second valence state is a positive divalence; “ / ” means that there is no corresponding parameter.

[0179] The energy conversion efficiency of the perovskite cells prepared in Examples 1 to 11 and Comparative Examples 1 to 4 was measured, and the results are shown in Table 2. The test conditions for the energy conversion efficiency are as follows:

[0180] In the atmospheric environment, the sunlight simulation light source uses the AM1.5G standard light source, and a four-channel digital source meter (Keithley 2440) is used to measure the volt-ampere characteristic curve of the battery under the light source to obtain the battery working output power Pout (unit: mW / cm 2), and the energy conversion efficiency Eff (Efficiency) of the battery is calculated from this; where, for the AM1.5G standard light source, the incident light power Popt is 100mW / cm 2 .

[0181] The energy conversion efficiency is calculated as follows: Eff = (Pout / Popt) x 100%.

[0182] Table 2 Test results of perovskite battery 100

[0183]

[0184]

[0185] As can be seen from Table 2, the energy conversion efficiency of the perovskite cells prepared in Examples 1 to 11 is higher than that of Comparative Examples 1 to 4, indicating that in the surface layer of the nickel oxide material transport layer in the hole transport layer facing the perovskite light absorbing layer, the molar ratio of the nickel element with a valence state of ≥ positive trivalent to the nickel element with a valence state of positive divalent is less than 1, which can improve the energy conversion efficiency of the perovskite cell.

[0186] It can be seen from Examples 1 to 3 that in the first transport layer of nickel oxide material, when the molar ratio of nickel elements with a valence state of ≥ positive trivalent to nickel elements with a valence state of positive divalent in the sublayer away from the perovskite light-absorbing layer (i.e., the first sublayer) is greater than 1, the energy conversion efficiency of the perovskite battery can be further improved.

[0187] It can be seen from Examples 1 and 4 to 5 that in the first transmission layer of nickel oxide material, when the molar ratio of nickel elements with a valence state of ≥ positive trivalent to nickel elements with a valence state of ≥ positive divalent in the sublayer close to the perovskite light absorption layer (i.e., the second sublayer) is 0.5 to 0.98, the perovskite battery can have a higher energy conversion efficiency.

[0188] It can be seen from Examples 1 and 6 to 7 that, in the two sublayers of the first transmission layer made of nickel oxide, when the thickness ratio of the sublayer far away from the perovskite light absorption layer (i.e., the first sublayer) to the sublayer close to the perovskite light absorption layer (i.e., the second sublayer) is (0.8 to 10):1, the perovskite battery can have a higher energy conversion efficiency.

[0189] From the comparison between Examples 1 and 8 and Comparative Examples 1 and 3, it can be seen that in the surface layer (i.e., the second sublayer and the third sublayer) of the nickel oxide material transport layer facing the perovskite light absorption layer in the hole transport layer, the molar ratio of the nickel element with a valence state of ≥ positive trivalent to the nickel element with a valence state of positive divalent is less than 1, which can improve the energy conversion efficiency of the perovskite battery.

[0190] It can be seen from Example 1 and Example 9 that the perovskite material in the perovskite light-absorbing layer is FAPbI3 or CsFAPbI3, both of which can make the perovskite battery have a higher energy conversion efficiency.

[0191] It can be seen from Examples 1 and 10-11 that when the hole transport layer has a second transport layer located between the first transport layer and the perovskite light absorbing layer (ie, Examples 1 and 10), the energy conversion efficiency of the perovskite cell can be further improved.

[0192] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A perovskite battery, characterized in that: The perovskite cell includes a hole transport layer and a perovskite light absorption layer, and the hole transport layer includes a first transport layer; The material of the first transmission layer includes nickel oxide; the molar ratio of the nickel element in the first valence state to the nickel element in the second valence state in the first transmission layer is M, and M in the surface layer of the first transmission layer facing the perovskite light absorbing layer is less than 1; The first valence state is a valence state of ≥ positive trivalence, and the second valence state is a positive divalence.

2. The perovskite battery according to claim 1, characterized in that The first transmission layer includes at least two sublayers; among two adjacent sublayers, the M of the sublayer close to the perovskite light absorption layer is smaller than the M of the sublayer far from the perovskite light absorption layer.

3. The perovskite battery according to claim 2, characterized in that In two adjacent sub-layers, the M of the sub-layer far away from the perovskite light absorbing layer is 1-2.

4. The perovskite cell according to claim 2, characterized in that In two adjacent sub-layers, the M of the sub-layer close to the perovskite light absorbing layer is ≥0.5 and <1.

5. The perovskite cell according to claim 2, characterized in that In two adjacent sub-layers, the thickness ratio of the sub-layer far from the perovskite light absorbing layer to the thickness ratio of the sub-layer close to the perovskite light absorbing layer is (0.8-10):

1.

6. The perovskite cell according to claim 5, characterized in that In two adjacent sub-layers, the thickness of the sub-layer away from the perovskite light absorbing layer is 5 nm to 30 nm.

7. The perovskite cell according to claim 5, characterized in that In two adjacent sub-layers, the thickness of the sub-layer close to the perovskite light absorbing layer is 1 nm to 20 nm.

8. The perovskite battery according to any one of claims 1 to 7, characterized in that: The hole transport layer further includes a second transport layer, which is disposed between the first transport layer and the perovskite light absorption layer, and the material of the second transport layer includes carbon-containing organic matter and its derivatives.

9. The perovskite cell according to claim 8, characterized in that The carbon-containing organic matter and its derivatives include at least one of thiophene compounds, carbazole compounds, amino acids, compounds containing phosphate groups, compounds containing carboxylic acid groups, compounds containing sulfonic acid groups, triphenylamine compounds, fluorene compounds and aromatic compounds.

10. The perovskite cell according to claim 9, characterized in that The carbon-containing organic matter and its derivatives include at least one of carbazole compounds and compounds containing phosphate groups.

11. The perovskite cell according to claim 10, characterized in that The carbon-containing organic matter and its derivatives include at least one of (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, (2-(9H-carbazole-9-yl)ethyl)phosphonic acid and poly(2-(9H-carbazole-9-yl)butyl)phosphonic acid.

12. The perovskite cell according to claim 8, characterized in that The thickness of the second transmission layer is 1 nm to 10 nm.

13. The perovskite battery according to any one of claims 1 to 12, characterized in that: The perovskite cell comprises a transparent substrate layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and an electrode layer arranged in sequence; Alternatively, the perovskite cell includes a transparent substrate layer, an electron transport layer, the perovskite light absorbing layer, the hole transport layer and an electrode layer arranged in sequence.

14. A stacked solar cell, characterized in that: The stacked solar cell comprises the perovskite cell according to any one of claims 1 to 13.

15. A photovoltaic module, characterized in that: The photovoltaic module includes the perovskite cell according to any one of claims 1 to 13 or the tandem solar cell according to claim 14.

16. A photovoltaic power generation system, characterized in that: The photovoltaic power generation system includes a plurality of electrically connected photovoltaic modules according to claim 15 .

17. An electrical device, characterized in that: The electrical equipment includes a plurality of electrically connected photovoltaic power generation systems as claimed in claim 16.

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