Solar cell and preparation method thereof, electric equipment and power generation equipment

Abstract

The invention provides a solar cell and a preparation method thereof, electric equipment and power generation equipment. The solar cell includes: a substrate; the first charge transport layer is arranged on one side of the substrate; the perovskite light absorption layer is arranged on the side, away from the substrate, of the first charge transport layer; the second charge transport layer is arranged on one side, far away from the substrate, of the perovskite light absorption layer; the first transparent conductive layer is arranged on the side, away from the substrate, of the second charge transfer layer; the first patterned transparent conducting layer is arranged on the surface, away from the substrate, of the first transparent conducting layer, and the carrier concentration of the first patterned transparent conducting layer is larger than or equal to that of the first transparent conducting layer; the first metal electrode is arranged on the surface of the first patterned transparent conductive layer. The high-carrier patterned transparent conductive layer can effectively reduce the contact resistance between the transparent conductive layer and the metal electrode, thereby reducing the series resistance of the solar cell, improving the current and fill factor, and further improving the efficiency of the solar cell.

Description

Technical Field

[0001] The present invention relates to the field of battery technology, and in particular to a solar cell and a preparation method thereof, an electrical device and a power generation device. Background Art

[0002] Currently, progress in metallization of perovskite double-layer cells has been slow. Due to the curing temperature limitations of perovskite cells, the top transparent conductive layer (TCO) cannot be annealed and crystallized above 180°C after deposition. This necessitates the use of ultra-low-temperature pastes with a curing temperature below 130°C to prepare the metal grid lines. This poses a challenge to the solvents and resins in the paste. However, due to the low curing temperature, ultra-low-temperature pastes struggle to form good ohmic contact with the transparent conductive layer (TCO) beneath the metal grid lines. Summary of the Invention

[0003] The present invention aims to at least partially solve one of the technical problems in the related art. To this end, one object of the present invention is to provide a solar cell in which a transparent conductive layer on the side of the perovskite light-absorbing layer has good ohmic contact with a metal electrode.

[0004] In one aspect, the present invention provides a solar cell. According to an embodiment of the present invention, the solar cell includes: a substrate; a first charge transport layer, the first charge transport layer being disposed on one side of the substrate; a perovskite light absorption layer, the perovskite light absorption layer being disposed on a side of the first charge transport layer away from the substrate; a second charge transport layer, the second charge transport layer being disposed on a side of the perovskite light absorption layer away from the substrate; a first transparent conductive layer, the first transparent conductive layer being disposed on a side of the second charge transport layer away from the substrate; a first patterned transparent conductive layer, the first patterned transparent conductive layer being disposed on a surface of the first transparent conductive layer away from the substrate, and the carrier concentration of the first patterned transparent conductive layer being greater than or equal to the carrier concentration of the first transparent conductive layer; and a first metal electrode, the first metal electrode being disposed on a surface of the first patterned transparent conductive layer. Thus, by disposing a high-carrier patterned transparent conductive layer between the first transparent conductive layer and the metal electrode, the contact resistance between the transparent conductive layer and the metal electrode can be effectively reduced, thereby reducing the series resistance of the solar cell, improving the current and fill factor, and thereby improving the efficiency of the solar cell.

[0005] According to an embodiment of the present invention, the first patterned transparent conductive layer is a transparent conductive layer structure that has been subjected to laser annealing treatment.

[0006] According to an embodiment of the present invention, the substrate includes a silicon substrate cell and an interconnection layer located between the silicon substrate cell and the first charge transport layer.

[0007] According to an embodiment of the present invention, the silicon-based battery includes: a silicon substrate; a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are respectively arranged on the front and back sides of the silicon substrate; a first doped silicon layer and a second doped silicon layer, the first doped silicon layer is arranged on a side of the first intrinsic amorphous silicon layer away from the silicon substrate, and the second doped silicon layer is arranged on a side of the second intrinsic amorphous silicon layer away from the silicon substrate; a second transparent conductive layer, the transparent conductive layer is arranged on a side of the second doped silicon layer away from the silicon substrate; and a second metal electrode, the second metal electrode is arranged on a side of the second transparent conductive layer away from the silicon substrate.

[0008] According to an embodiment of the present invention, the solar cell further includes: a second patterned transparent conductive layer, wherein the second patterned transparent conductive layer is arranged on a surface of the second transparent conductive layer away from the silicon substrate, and the carrier concentration of the second patterned transparent conductive layer is greater than or equal to the carrier concentration of the second transparent conductive layer.

[0009] According to an embodiment of the present invention, the first patterned transparent conductive layer and the second patterned transparent conductive layer respectively meet at least one of the following conditions: the carrier concentration is 1E20cm -3 -1E21cm -3 ; width is 20μm-100μm; thickness is 5-100nm, the second patterned transparent conductive layer is a transparent conductive layer structure that has been subjected to laser annealing treatment, and the carriers of the first transparent conductive layer meet at least one of the following conditions: carrier concentration is 1E19cm -3 -3E20cm -3 ;Thickness is 5-100nm.

[0010] In another aspect of the present invention, the present invention provides a method for preparing the aforementioned solar cell. According to an embodiment of the present invention, the method for preparing a solar cell includes: providing a substrate; forming a first charge transport layer on one side of the substrate; forming a perovskite light absorption layer on the side of the first charge transport layer away from the substrate; forming a second charge transport layer on the side of the perovskite light absorption layer away from the substrate; depositing a first transparent conductive layer on the side of the second charge transport layer away from the substrate; depositing a first patterned transparent conductive substrate on the surface of the first transparent conductive layer away from the substrate, and performing a first laser annealing on the first patterned transparent conductive substrate to obtain the first patterned transparent conductive layer, wherein the carrier concentration of the first patterned transparent conductive layer is greater than or equal to the carrier concentration of the first transparent conductive layer; and printing a paste on the surface of the first patterned transparent conductive layer away from the substrate to form a first metal electrode. Therefore, by providing a patterned transparent conductive layer with high current carriers between the first transparent conductive layer and the metal electrode, the contact resistance between the transparent conductive layer and the metal electrode can be effectively reduced, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell; moreover, laser annealing is performed on the patterned transparent conductive layer, so that the patterned transparent conductive layer with high current carriers can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized, which is more conducive to the contact between the metal electrode and the transparent conductive layer, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell.

[0011] According to an embodiment of the present invention, the preparation method of the substrate includes: depositing a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer on the opposite front and back sides of a silicon substrate, respectively; depositing a first doped silicon layer on a side of the first intrinsic amorphous silicon layer away from the silicon substrate, and depositing a second doped silicon layer on a side of the second intrinsic amorphous silicon layer away from the silicon substrate; depositing a second transparent conductive layer on a side of the second doped silicon layer away from the silicon substrate, and depositing an interconnection layer on a side of the first doped silicon layer away from the silicon substrate; printing a paste on a side of the second transparent conductive layer away from the silicon substrate to form a second metal electrode.

[0012] According to an embodiment of the present invention, the method for preparing the substrate further includes: after forming the second transparent conductive layer, performing a heating annealing treatment on it; or, further includes: depositing a second patterned transparent conductive substrate on the surface of the second transparent conductive layer away from the substrate, and performing a second laser annealing on the second patterned transparent conductive substrate to obtain the second patterned transparent conductive layer, and the carrier concentration of the second patterned transparent conductive layer is greater than or equal to the carrier concentration of the second transparent conductive layer.

[0013] According to an embodiment of the present invention, the laser wavelengths of the first laser annealing and the second laser annealing are respectively 280-1500 nm.

[0014] According to an embodiment of the present invention, the temperature of the heating annealing treatment is 180-200°C.

[0015] In yet another aspect, the present invention provides an electrical device. According to an embodiment of the present invention, the electrical device includes the aforementioned solar cell, or includes a solar cell prepared using the aforementioned method. As a result, the electrical device exhibits excellent cell efficiency. Those skilled in the art will appreciate that the electrical device possesses all the features and advantages of the aforementioned solar cell, and further details are omitted here.

[0016] In yet another aspect, the present invention provides a power generation device. According to an embodiment of the present invention, the power generation device includes the aforementioned solar cell, or includes a solar cell prepared using the aforementioned method. As a result, the power generation device exhibits excellent cell efficiency. Those skilled in the art will appreciate that the power generation device possesses all the features and advantages of the aforementioned solar cell, and further details are omitted here. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0018] Figure 1 is a schematic structural diagram of a solar cell in one embodiment of the present invention;

[0019] Figure 2 is a schematic structural diagram of a solar cell in another embodiment of the present invention;

[0020] Figure 3 is a schematic structural diagram of a solar cell in another embodiment of the present invention;

[0021] Figure 4 is a schematic structural diagram of a solar cell in another embodiment of the present invention;

[0022] Figure 1: Base 10; first charge transport layer 21; perovskite light absorption layer 22; second charge transport layer 23; first transparent conductive layer 24; first patterned transparent conductive layer 25; first metal electrode 26; silicon base cell 30; interconnection layer 40; silicon substrate 31; first intrinsic amorphous silicon layer 32; second intrinsic amorphous silicon layer 33; first doped silicon layer 34; second doped silicon layer 35; second transparent conductive layer 36; second metal electrode 37; second patterned transparent conductive layer 38. DETAILED DESCRIPTION

[0023] Below, the scheme of the present invention will be explained in conjunction with embodiment.It will be understood by those skilled in the art that the following examples are only used to illustrate the present invention and should not be regarded as limiting the scope of the present invention.In the embodiment, if specific technology or conditions are not indicated, the technology or conditions described in the literature in this area or the product instructions are used.The reagents or instruments used are not indicated by the manufacturer, and are all conventional products that can be obtained by commercial purchase.

[0024] The present invention is described below with reference to specific examples. It should be noted that these examples are merely illustrative and do not limit the present invention in any way.

[0025] In one aspect of the present invention, the present invention provides a solar cell. Figure 1 The solar cell includes: a substrate 10; a first charge transport layer 21, the first charge transport layer 21 is arranged on one side of the substrate 10; a perovskite absorption layer 22, the perovskite absorption layer 22 is arranged on the side of the first charge transport layer 21 away from the substrate; a second charge transport layer 23, the second charge transport layer 23 is arranged on the side of the perovskite absorption layer 22 away from the substrate 10; a first transparent conductive layer 24, the first transparent conductive layer 24 is arranged on the side of the second charge transport layer 23 away from the substrate 10; a first patterned transparent conductive layer 25, the first patterned transparent conductive layer 25 is arranged on the surface of the first transparent conductive layer 24 away from the substrate 10, and the carrier concentration of the first patterned transparent conductive layer 25 is greater than or equal to the carrier concentration of the first transparent conductive layer 24; a first metal electrode 26, the first metal electrode 26 is arranged on the surface of the first patterned transparent conductive layer 25 away from the substrate 10. Thus, by providing a high-carrier patterned transparent conductive layer between the first transparent conductive layer and the metal electrode, the first metal electrode directly contacts the high-carrier first patterned transparent conductive layer 25. Compared with direct contact with the first transparent conductive layer, this can effectively reduce the contact resistance between the transparent conductive layer and the metal electrode, thereby reducing the series resistance of the solar cell, improving the current and fill factor, and thus improving the efficiency of the solar cell; at the same time, using the patterned transparent conductive layer (i.e., the first patterned transparent conductive layer 25) as the contact medium between the first metal electrode 26 and the first transparent conductive layer 24 can help reduce the light parasitic absorption of the first patterned transparent conductive layer 25, thereby making the transparent conductive structure (including the overall structure of the first transparent conductive layer 24 and the first patterned transparent conductive layer 25) have low parasitic absorption and better conductivity.

[0026] According to some embodiments of the present invention, the carrier concentration of the first patterned transparent conductive layer is 1E20 cm -3 -1E21cm -3 , for example, 1E20cm -3 、2E20cm-3 、3E20cm -3 、4E20cm -3 、5E20cm -3 、6E20cm -3 、7E20cm -3 、8E20cm -3 、9E20cm -3 、1E21cm -3 The first patterned transparent conductive layer with a high carrier concentration has a higher conductivity and has a good ohmic contact with the metal electrode, which can effectively reduce the contact resistance between the two, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell; if the carrier concentration of the first patterned transparent conductive layer is relatively low, the effect of improving the ohmic contact between the first patterned transparent conductive layer and the first metal electrode is relatively poor, that is, the contact resistance between the two cannot be effectively reduced.

[0027] According to some embodiments of the present invention, the width of the first patterned transparent conductive layer is 20μm-100μm, such as 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc.; the thickness of the first patterned transparent conductive layer is 5-100nm, such as 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., so that the transmittance of sunlight can be effectively improved, and it can be ensured that the first metal electrode can be effectively prepared on its surface.

[0028] It is well known to those skilled in the art that the first metal electrode is a patterned gate line. Therefore, in the present invention, it is only necessary to set the first patterned transparent conductive layer in the area where the first metal electrode is required. In other words, the first metal electrode and the first patterned transparent conductive layer have the same pattern.

[0029] According to some embodiments of the present invention, the carrier concentration of the first transparent conductive layer is 1E19 cm -3 -3E20cm -3 , for example, 1E19cm -3 、3E19cm -3 、5E19cm -3 、8E19cm -3 、1E20cm -3 、2E20cm -3 、3E20cm -3The first transparent conductive layer with this carrier concentration has good conductivity while still having good light transmittance, ensuring excellent photoelectric performance of the solar cell. In some embodiments, the thickness of the first transparent conductive layer is 5-100 nm, for example, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0030] According to some embodiments of the present invention, the first patterned transparent conductive layer and the first transparent conductive layer are transparent conductive materials (TCO), and specific materials thereof include, but are not limited to, FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), IWO (tungsten-doped indium oxide), and other transparent conductive materials. The first patterned transparent conductive layer and the first transparent conductive layer can each be a single-layer structure or a stacked structure of multiple materials.

[0031] According to some embodiments of the present invention, the first patterned transparent conductive layer 25 is a transparent conductive layer structure that has been subjected to laser annealing treatment. In this way, the high-carrier patterned transparent conductive layer can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized. This is more conducive to the contact between it and the first metal electrode, and further reduces the contact resistance between the two. This can help improve the efficiency and preparation yield of solar cells.

[0032] According to some embodiments of the present invention, the material of the first metal electrode includes but is not limited to conductive materials such as Ag, Cu, C, Au, and Al.

[0033] The first charge transport layer, the perovskite light absorbing layer, the second charge transport layer, the transparent conductive layer (including the first transparent conductive layer and the first patterned transparent conductive layer) and the first metal electrode can constitute a perovskite cell; if the solar cell is a stacked solar cell, the above-mentioned perovskite cell can be the top cell of the stacked cell.

[0034] According to some embodiments of the present invention, in a perovskite cell, one of the first charge transport layer and the second charge transport layer may be a hole transport layer, and the other may be an electron transport layer. For example, if the first charge transport layer is a hole transport layer, the second charge transport layer may be an electron transport layer; or, if the first charge transport layer is an electron transport layer, the second charge transport layer may be a hole transport layer.

[0035] In some embodiments, the hole transport material in the hole transport layer may include but is not limited to one or more of the following materials and their derivatives: nickel oxide (NiO x, 1≤x≤2), cuprous iodide (CuI), cuprous oxide (Cu2O), cuprous thiocyanate (CuSCN), 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene (Spiro-TTB), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz), (4-(3,6-dimethyl-9H-carbazole- 9H-carbazol-9-yl)butyl)phosphonic acid (Me-4PACz), [4-(9H-carbazol-9-yl)butyl]phosphonic acid (4PACz), (4-(3,6-dibromo-9H-carbazol-9-yl)butyl)phosphonic acid (Br-4PACz), [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), (2-(3,6-dimethyl-9H-carbazol-9-yl)ethyl)phosphonic acid (Me-2PACz), (2-(9H-carbazol-9-yl)ethyl)phosphonic acid (2PACz), (2-(3,6-dibromo-9H-carbazol-9-yl)ethyl)phosphonic acid (Br-2PACz), etc.

[0036] In some embodiments, the electron transport material in the electron transport layer may include, but is not limited to, one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), poly(3,4-ethylenedioxythiophene):polystyrenesulfonic acid (PEDOT:PSS), poly3-hexylthiophene (P3HT), triphenylamine with triptycene as the core (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-phenylamino)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxides, silicon oxide (SiO2), strontium titanate (SrTiO3), cuprous thiocyanate (CuSCN), etc.

[0037] In some embodiments, the perovskite light absorbing layer comprises a perovskite material. In some embodiments, the perovskite material comprises at least one of the compounds represented by [A][B][X]3 and [A]2[C][D][X]6, wherein A comprises at least one inorganic or organic monovalent cation, B comprises at least one inorganic divalent cation, C comprises at least one inorganic monovalent cation, D comprises at least one inorganic trivalent cation, and X comprises at least one monovalent anion.

[0038] Exemplarily, the organic monovalent cations include: (NR14 R 15 R 16 R 17 ) + 、(R 14 R 15 N=CR 16 R 17 ) + 、(R 14 R 15 NC(R 18 )=NR 16 R 17 ) + or (R 14 R 15 NC(NR 18 R 19 )=NR 16 R 17 ) + At least one of the following, wherein R 14 、R 15 、R 16 、R 17 、R 18 and R 19 Each is independently selected from H, substituted or unsubstituted C1-C20 alkyl or substituted or unsubstituted aryl. For example, organic monovalent cations include: (H2N=CH-NH2) + (abbreviated as FA), CH3NH3 + (abbreviated as MA) at least one.

[0039] Exemplarily, the inorganic monovalent cations include: Li + 、Na + , K + , Rb + 、Cs + 、Cu + 、Ag + 、Au + or Hg + At least one of .

[0040] Exemplarily, the inorganic divalent cations include: Pb 2+ 、Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Ni 2+ 、Cd 2+ 、Cu2+ 、Mn 2+ 、Pd 2+ 、Yb 2+ or Eu 2+ At least one of .

[0041] Exemplarily, the inorganic trivalent cations include: Bi 3+ 、Sb 3+ Cr 3+ 、Fe 3+ 、Co 3+ 、Ga 3+ 、As 3+ 、Ru 3+ , Rh 3+ 、In 3+ 、Ir 3+ 、Au 3+ or Al 3+ At least one of .

[0042] Exemplarily, the monovalent anions include: F - 、Cl - Br - , I - 、SCN - 、CNO - 、OCN - 、OSCN - SH - OH - 、CN - 、SeCN - At least one of .

[0043] According to an embodiment of the present invention, referring to Figure 2 The substrate 10 includes a silicon substrate cell 30 and an interconnection layer 40 located between the silicon substrate cell 30 and the first charge transport layer 21. In this way, the solar cell can be a stacked cell containing a perovskite cell and a crystalline silicon cell.

[0044] In some embodiments, the interconnection layer 40 may be a transparent conductive layer (TCO layer); in other embodiments, the interconnection layer includes a stacked TCO layer and a tunneling layer, wherein the tunneling layer may be a silicon oxide layer.

[0045] According to some embodiments of the present invention, there are no special requirements for the specific type of silicon-based cell, and those skilled in the art can flexibly select it according to actual needs. In some embodiments, the silicon-based cell can be a crystalline silicon cell, a heterojunction (HJT) cell, a PERC cell, a top oxide passivated contact (TOPCon) cell, a back contact (BC) cell, or other silicon-based cells.

[0046] In some embodiments, reference Figure 3 The silicon-based cell 30 includes: a silicon substrate 31; a first intrinsic amorphous silicon layer 32 and a second intrinsic amorphous silicon layer 33, the first intrinsic amorphous silicon layer 32 and the second intrinsic amorphous silicon layer 33 are respectively arranged on the front and back sides of the silicon substrate 31; a first doped silicon layer 34 and a second doped silicon layer 35, the first doped silicon layer 34 is arranged on the side of the first intrinsic amorphous silicon layer 32 away from the silicon substrate 31, and the second doped silicon layer 35 is arranged on the side of the second intrinsic amorphous silicon layer 33 away from the silicon substrate 31; a second transparent conductive layer 36, the second transparent conductive layer 36 is arranged on the side of the second doped silicon layer 35 away from the silicon substrate 31; and a second metal electrode 37, the second metal electrode 37 is arranged on the side of the second transparent conductive layer 36 away from the silicon substrate 31.

[0047] According to an embodiment of the present invention, referring to Figure 4 The solar cell further includes a second patterned transparent conductive layer 38, which is disposed on a surface of the second transparent conductive layer 36 away from the silicon substrate 31, and the carrier concentration of the second patterned transparent conductive layer 38 is greater than or equal to the carrier concentration of the second transparent conductive layer 36. Thus, by disposing a high-carrier patterned transparent conductive layer between the second transparent conductive layer and the second metal electrode, the second metal electrode directly contacts the high-carrier second patterned transparent conductive layer 38. Compared to direct contact with the second transparent conductive layer, this arrangement effectively reduces the contact resistance between the transparent conductive layer and the metal electrode, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell. Furthermore, using the patterned transparent conductive layer (i.e., the second patterned transparent conductive layer 25) as the contact medium between the second metal electrode 37 and the second transparent conductive layer 36 can help reduce the parasitic absorption of light by the second patterned transparent conductive layer 38, thereby ensuring that the transparent conductive structure (including the overall structure of the second transparent conductive layer 36 and the second patterned transparent conductive layer 38) has low parasitic absorption and better conductivity.

[0048] According to some embodiments of the present invention, the carrier concentration of the second patterned transparent conductive layer is 1E20 cm -3 -1E21cm -3 , for example, 1E20cm -3 、2E20cm -3 、3E20cm -3 、4E20cm -3 、5E20cm -3 、6E20cm -3 、7E20cm -3 、8E20cm -3 、9E20cm -3 、1E21cm -3The second patterned transparent conductive layer with a high carrier concentration has a higher conductivity and has a good ohmic contact with the metal electrode, which can effectively reduce the contact resistance between the two, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell; if the carrier concentration of the second patterned transparent conductive layer is relatively low, the effect of improving the ohmic contact between the second patterned transparent conductive layer and the second metal electrode is relatively poor, that is, the contact resistance between the two cannot be effectively reduced.

[0049] According to some embodiments of the present invention, the width of the second patterned transparent conductive layer is 20μm-100μm, such as 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc.; the thickness of the second patterned transparent conductive layer is 5-100nm, such as 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc., so that the transmittance of sunlight can be effectively improved, and it can be ensured that the second metal electrode can be effectively prepared on its surface.

[0050] According to some embodiments of the present invention, the second patterned transparent conductive layer 38 is a transparent conductive layer structure that has been subjected to laser annealing treatment. In this way, the high-carrier patterned transparent conductive layer can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized. This is more conducive to the contact between it and the second metal electrode, and further reduces the contact resistance between the two. This can help improve the efficiency and production yield of solar cells.

[0051] It is well known to those skilled in the art that the second metal electrode is a patterned gate line. Therefore, in the present invention, it is only necessary to set the second patterned transparent conductive layer in the area where the second metal electrode is required. In other words, the second metal electrode and the second patterned transparent conductive layer have the same pattern.

[0052] According to some embodiments of the present invention, the carrier concentration of the second transparent conductive layer is 1E19 cm -3 -3E20cm -3 , for example, 1E19cm -3 、3E19cm -3 、5E19cm -3 、8E19cm -3 、1E20cm -3 、2E20cm -3 、3E20cm -3The second transparent conductive layer with this carrier concentration has good conductivity while still having good light transmittance, ensuring excellent photoelectric performance of the solar cell. In some embodiments, the thickness of the second transparent conductive layer is 5-100 nm, for example, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, etc.

[0053] According to some embodiments of the present invention, the second patterned transparent conductive layer and the second transparent conductive layer are transparent conductive materials (TCO), and specific materials thereof include, but are not limited to, FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), IWO (tungsten-doped indium oxide), and other transparent conductive materials. The second patterned transparent conductive layer and the second transparent conductive layer can each be a single layer structure or a stacked structure of multiple materials.

[0054] According to some embodiments of the present invention, the material of the second metal electrode includes but is not limited to conductive materials such as Ag, Cu, C, Au, and Al.

[0055] According to some embodiments of the present invention, the silicon substrate may be an n-type silicon substrate or a p-type silicon substrate.

[0056] According to some embodiments of the present invention, the first doped silicon layer and the second doped silicon layer have different conductivity types. In some embodiments, the first doped silicon layer has an n-type conductivity type and the second doped silicon layer has a p-type conductivity type. In some embodiments, the second doped silicon layer has an n-type conductivity type and the first doped silicon layer has a p-type conductivity type. Furthermore, in some embodiments, the first doped silicon layer and the second doped silicon layer can each independently be doped microcrystalline silicon, doped amorphous silicon, or doped nanocrystalline silicon.

[0057] According to the embodiments of the present invention, there are no special requirements for the specific thickness, carrier concentration and other related parameters of the above-mentioned first intrinsic amorphous silicon, second intrinsic amorphous silicon, first doped silicon layer and second doped silicon layer. Those skilled in the art can make flexible choices based on actual needs and relevant technical means, and no limitation is made here.

[0058] In another aspect of the present invention, the present invention provides a method for preparing the aforementioned solar cell. According to an embodiment of the present invention, the method for preparing the solar cell includes:

[0059] S100: providing a substrate 10.

[0060] According to some embodiments of the present invention, the solar cell is a single-junction perovskite cell, and the substrate may be a bottom electrode layer.

[0061] According to some embodiments of the present invention, the solar cell may be a stacked cell of a perovskite cell and a silicon substrate cell. Figure 2 The substrate 10 includes a silicon substrate cell 30 and an interconnection layer 40 located between the silicon substrate cell 30 and the first charge transport layer 21 .

[0062] Furthermore, in some embodiments, the interconnection layer 40 may be a transparent conductive layer (TCO layer); in other embodiments, the interconnection layer includes a stacked TCO layer and a tunneling layer, wherein the tunneling layer may be a silicon oxide layer.

[0063] According to some embodiments of the present invention, there are no special requirements for the specific type of silicon-based cells, and those skilled in the art can flexibly select them according to actual needs. In some embodiments, the silicon-based cells can be silicon-based cells such as crystalline silicon cells, heterojunction (HJT) cells, emitter and rear passivation (PERC) cells, oxide passivation contact (TOPCon) cells, and back contact (BC) cells. Among them, the specific preparation method of the silicon-based cell depends on the specific cell type and structure of the silicon-based cell. The structure and preparation method of the silicon-based cell are described below based on an embodiment, as follows:

[0064] S110 : forming a first intrinsic amorphous silicon layer 32 and a second intrinsic amorphous silicon layer 33 by deposition on the opposite front and back surfaces of the silicon substrate 31 , respectively.

[0065] In some embodiments, before depositing the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer, the front and back sides of the silicon substrate may be cleaned and textured in advance, and then the silicon wafer surface may be cleaned with concentrated sulfuric acid, ammonia water, and hydrochloric acid.

[0066] In some embodiments, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer can be deposited by chemical vapor deposition (e.g., plasma-enhanced chemical vapor deposition, PECVD) or physical vapor deposition (e.g., magnetron sputtering). There are no specific requirements for the specific deposition process conditions and parameters, or the thickness of the amorphous silicon layer. Those skilled in the art can flexibly select these based on actual needs and existing technical means, and no limitations are imposed herein.

[0067] S120 : depositing a first doped silicon layer 34 on a side of the first intrinsic amorphous silicon layer 32 away from the silicon substrate 31 , and depositing a second doped silicon layer 35 on a side of the second intrinsic amorphous silicon layer 33 away from the silicon substrate 31 .

[0068] In some embodiments, the first doped silicon layer and the second doped silicon layer can be deposited using chemical vapor deposition (e.g., plasma-enhanced chemical vapor deposition, PECVD) or physical vapor deposition (e.g., magnetron sputtering). There are no specific requirements for the specific deposition process conditions and parameters, or the thickness of the amorphous silicon layer. Those skilled in the art can flexibly select these based on actual needs and existing technical means, and no limitations are imposed herein.

[0069] S130 : depositing a second transparent conductive layer 35 on a side of the second doped silicon layer 35 away from the silicon substrate 31 , and depositing an interconnection layer 40 on a side of the first doped silicon layer 34 away from the silicon substrate 31 .

[0070] In some embodiments, the second transparent conductive layer or the interconnect layer may be deposited by chemical vapor deposition (such as plasma enhanced chemical vapor deposition, PECVD) or physical vapor deposition (such as magnetron sputtering).

[0071] According to some embodiments of the present invention, the method for preparing a substrate comprising a silicon-based solar cell further includes S131: after forming the second transparent conductive layer, performing a heat annealing treatment on the substrate. The heat annealing treatment causes the second transparent conductive material to crystallize, which is more conducive to contact between the second transparent conductive material and the second metal electrode, thereby reducing the contact resistance between the two. Moreover, since the perovskite light-absorbing layer has not yet been prepared, the use of a high-temperature heat annealing treatment at this time will not affect the quality of the solar cell. Furthermore, in some specific embodiments, a chain curing furnace can be used for the heat annealing treatment. In some specific embodiments, the temperature of the heat annealing treatment can be 180-200°C.

[0072] According to some other embodiments of the present invention, the preparation method of the substrate comprising a silicon substrate battery also includes S132: depositing a second patterned transparent conductive substrate on the surface of the second transparent conductive layer away from the substrate, and performing a second laser annealing on the second patterned transparent conductive substrate to obtain a second patterned transparent conductive layer, and the carrier concentration of the second patterned transparent conductive layer is greater than or equal to the carrier concentration of the second transparent conductive layer.

[0073] In this step, by providing a patterned transparent conductive layer with a higher current carrier between the second transparent conductive layer and the second metal electrode, the contact resistance between the transparent conductive layer and the metal electrode can be effectively reduced, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and thus improving the efficiency of the solar cell; in addition, the patterned transparent conductive layer is laser annealed, so that the patterned transparent conductive layer with a high current carrier can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized, which is more conducive to the contact between it and the second metal electrode, reducing the contact resistance between the two, and thus helping to improve the efficiency and production yield of the solar cell.

[0074] According to an embodiment of the present invention, the laser wavelengths used in the second laser annealing are 280 to 1500 nm, for example, 280 nm, 300 nm, 350 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, and 1500 nm. Laser wavelengths within the above range are more conducive to crystallization of the transparent conductive material and reduce its contact resistance.

[0075] S140: printing a paste on a side of the second transparent conductive layer away from the silicon substrate, and curing the paste to form a second metal electrode.

[0076] In some embodiments, specific methods for preparing the second metal electrode include, but are not limited to, screen printing, electrospraying, inkjet printing, and the like.

[0077] In some embodiments, the step of preparing the second metal electrode can be performed when the first metal electrode is subsequently prepared.

[0078] According to some embodiments of the present invention, when a structure having a second patterned transparent conductive layer is formed, due to the provision of the high-carrier patterned transparent conductive layer and / or the laser annealing method, good ohmic contact is achieved between the patterned transparent conductive layer and the metal electrode. To protect the perovskite material from the effects of high temperatures, the slurry can be cured at ultra-low temperatures when preparing the metal electrodes (including the first metal electrode and the second metal electrode), while still achieving good ohmic contact between the metal electrode and the transparent conductive layer. In some specific embodiments, the curing temperature can be lower than 130° C., for example, 60-130° C. The printed slurry can include a resin and a conductive powder (or can further include other additives). The resin can include an epoxy resin, an acrylic resin, or a polyimide, and the conductive powder can include silver powder and / or copper powder. The mass fraction of the conductive powder can be 70-98%.

[0079] S200 : forming a first charge transport layer 21 on one side of the substrate 10 .

[0080] In some embodiments, the first charge transport layer can be prepared by vapor deposition or coating.

[0081] S300 : forming a perovskite light absorption layer 22 on a side of the first charge transport layer 21 away from the substrate 10 .

[0082] In some embodiments, the perovskite light-absorbing layer can be prepared by a solution method, for example, a perovskite precursor solution is coated on the surface of the first charge transport layer by a coating method, and then the perovskite light-absorbing layer is obtained by heat treatment; in other embodiments, the perovskite light-absorbing layer can also be prepared by full evaporation, for example, a halogenated inorganic salt and an organic ammonium salt are evaporated on the surface of the first charge transport layer, and then the perovskite light-absorbing layer is obtained by heat treatment; in some other embodiments, the perovskite light-absorbing layer can be prepared by evaporation + solution method, for example, a halogenated inorganic salt solution is coated on the surface of the first charge transport layer by a solution method, solidified to obtain an inorganic layer, and then an organic ammonium salt is evaporated, and finally the perovskite light-absorbing layer is obtained by heat treatment.

[0083] There are no special requirements for the specific process conditions, parameters, and thickness of the perovskite light-absorbing layer, and those skilled in the art can flexibly select them based on actual needs and existing technical means.

[0084] S400 : forming a second charge transport layer 23 on a side of the perovskite light absorbing layer 22 away from the substrate 10 .

[0085] In some embodiments, the second charge transport layer can be prepared by vapor deposition or coating.

[0086] S500 : forming a first transparent conductive layer 24 by deposition on a side of the second charge transport layer 23 away from the substrate 10 .

[0087] In some embodiments, the first transparent conductive layer may be deposited by chemical vapor deposition (such as plasma enhanced chemical vapor deposition, PECVD) or physical vapor deposition (such as magnetron sputtering).

[0088] S600: A first patterned transparent conductive substrate is deposited on the surface of the first transparent conductive layer 24 away from the substrate 10, and the first patterned transparent conductive substrate is subjected to a first laser annealing to obtain a first patterned transparent conductive layer 25, wherein the carrier concentration of the first patterned transparent conductive layer 25 is greater than or equal to the carrier concentration of the first transparent conductive layer 24.

[0089] In this step, by providing a high-carrier patterned transparent conductive layer between the first transparent conductive layer and the metal electrode, the contact resistance between the transparent conductive layer and the metal electrode can be effectively reduced, thereby reducing the series resistance of the solar cell, increasing the current and fill factor, and further improving the efficiency of the solar cell; the patterned transparent conductive layer is laser annealed, so that the high-carrier patterned transparent conductive layer can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized, which is more conducive to the contact between it and the first metal electrode and reduces the contact resistance between the two; and the use of a laser annealing treatment method instead of a high-temperature annealing treatment method can effectively avoid the influence of the high-temperature annealing temperature on the perovskite material, that is, this method can both protect the perovskite material from the influence of high temperature and effectively reduce the contact resistance between the metal electrode and the transparent conductive layer, so that the efficiency and preparation yield of the solar cell can be effectively improved.

[0090] According to an embodiment of the present invention, the laser wavelength of the first laser annealing is 280 to 1500 nm, for example, 280 nm, 300 nm, 350 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, etc. Laser wavelengths within the above range are more conducive to the crystallization of the transparent conductive material and reduce its contact resistance.

[0091] S700 : Printing paste on the surface of the first patterned transparent conductive layer 25 and curing the paste to form the first metal electrode 26 .

[0092] In some embodiments, specific methods for preparing the first metal electrode include, but are not limited to, screen printing, electrospraying, inkjet printing, and the like.

[0093] According to some embodiments of the present invention, due to the provision of a high-carrier patterned transparent conductive layer and / or the laser annealing method, a good ohmic contact is established between the patterned transparent conductive layer and the metal electrode. To protect the perovskite material from the effects of high temperature, when preparing the metal electrodes (including the first metal electrode and the second metal electrode), an ultra-low temperature can be used to cure the slurry, while still ensuring good ohmic contact between the metal electrode and the transparent conductive layer. In this way, the curing temperature can be lower than 130°C, for example, 60-130°C. The composition of the printed slurry may include a resin and a conductive powder (or may further include other additives). The resin may include an epoxy resin, an acrylic resin, or a polyimide, and the conductive powder may include silver powder and / or copper powder, wherein the mass fraction of the conductive powder may be 70-98%.

[0094] According to an embodiment of the present invention, in the above-mentioned preparation method, by providing a patterned transparent conductive layer with high carriers between the first transparent conductive layer and the metal electrode, the contact resistance between the transparent conductive layer and the metal electrode can be effectively reduced, thereby reducing the string resistance of the solar cell, improving the current and fill factor, and thus improving the efficiency of the solar cell; moreover, the patterned transparent conductive layer is laser annealed, so that the patterned transparent conductive layer with high carriers can be thermally annealed by laser heat, so that the transparent conductive material in the laser scanning area is crystallized, which is more conducive to the contact between the metal electrode and the transparent conductive layer, thereby reducing the string resistance of the solar cell, improving the current and fill factor, and thus improving the efficiency of the solar cell; and the use of a laser annealing treatment method instead of a high-temperature annealing treatment method can effectively avoid the influence of the high-temperature annealing temperature on the perovskite material, that is, this method can both protect the perovskite material from the influence of high temperature and effectively reduce the contact resistance between the metal electrode and the transparent conductive layer, thus effectively improving the efficiency and preparation yield of the solar cell.

[0095] In yet another aspect, the present invention provides an electrical device. According to an embodiment of the present invention, the electrical device includes the aforementioned solar cell, or includes a solar cell prepared using the aforementioned method. As a result, the electrical device exhibits excellent cell efficiency. Those skilled in the art will appreciate that the electrical device possesses all the features and advantages of the aforementioned solar cell, and further details are omitted here.

[0096] According to some embodiments of the present application, electrical devices may include photovoltaic equipment, mobile devices (such as mobile phones, laptops, etc.), electric vehicles (such as pure electric vehicles, hybrid electric vehicles, plug-in hybrid electric vehicles, electric bicycles, electric scooters, electric golf carts, electric trucks, etc.), electric trains, ships and satellites, energy storage systems, etc., but are not limited to these.

[0097] In yet another aspect, the present invention provides a power generation device. According to an embodiment of the present invention, the power generation device includes the aforementioned solar cell, or includes a solar cell prepared using the aforementioned method. As a result, the power generation device exhibits excellent cell efficiency. Those skilled in the art will appreciate that the power generation device possesses all the features and advantages of the aforementioned solar cell, and further details are omitted here.

[0098] In some embodiments, the power generation device can be used in fields such as ground power stations, aviation, construction, and wearable power generation devices.

[0099] Example

[0100] Example 1

[0101] The method for preparing a solar cell comprises:

[0102] An n-type silicon substrate is selected, and the surface of the silicon substrate is pre-cleaned and textured, and then the surface of the silicon substrate is cleaned with concentrated sulfuric acid, ammonia water, and hydrochloric acid.

[0103] Plate-type PECVD was used to deposit the first intrinsic amorphous silicon layer (6 nm thick), the second intrinsic amorphous silicon layer (7 nm thick), and the first doped silicon layer (12 nm thick, n-type doped microcrystalline silicon with a doping concentration of about 1E19 cm-1) on the front and back sides of the n-type silicon substrate. -3 ), the second doped silicon layer (18 nm thick, p-type doped amorphous silicon, doping concentration of about 1E20 cm -3 ).

[0104] A 50 nm thick second transparent conductive layer is deposited on the surface of the second doped silicon layer away from the n-type silicon substrate by PVD method. The carrier concentration of the second transparent conductive layer is 1E20 cm -3 At the same time, a transparent conductive layer is deposited on the front side as an interconnection layer, and then a silicon oxide tunneling layer is deposited on the side of the interconnection layer away from the n-type silicon substrate. The tunneling layer thickness is 20nm and the carrier concentration is 5E19cm -3 .

[0105] The second transparent conductive layer is heated, annealed, and crystallized in a chain curing furnace at a temperature of 200°C.

[0106] The hole transport layer is prepared on the side of the tunneling layer away from the silicon substrate by evaporation method. The material is NiOx and the thickness is 100nm.

[0107] A perovskite light-absorbing layer was prepared on the side of the hole transport layer away from the silicon substrate by a coating method. The material was MAPbI3 and the thickness was 1 μm.

[0108] An electron transport layer is prepared on the side of the perovskite light-absorbing layer away from the silicon substrate by evaporation method. The material is C60 and the thickness is 50nm.

[0109] A 60nm thick first transparent conductive layer is deposited on the electron transport layer by PVD method. The carrier concentration of the first transparent conductive layer is 1E20cm -3 ;

[0110] Then, a mask is covered with a localized opening on the mask, corresponding to the pattern of the subsequent metal grid line (i.e., the first metal electrode), and the first patterned transparent conductive substrate is deposited with a deposition thickness of 50nm and a carrier concentration of 2E20cm -3 .

[0111] The first patterned transparent conductive substrate is subjected to patterned laser annealing treatment to crystallize the first patterned transparent conductive substrate with high surface carrier concentration to obtain a first patterned transparent conductive layer with a thickness of 50 nm and a carrier concentration of 2E20 cm -3 , the wavelength of the laser scanning is 1450nm.

[0112] Finally, a conductive paste is used to print on the first patterned transparent conductive layer on the front side, and the first silver metal electrode is obtained by curing at 100°C; a conductive paste is also printed on the second transparent conductive layer on the back side, and the second silver metal electrode is obtained by curing at 100°C to prepare a solar cell, wherein the conductive paste includes polyimide and 80wt% of silver powder.

[0113] Example 2

[0114] The steps for preparing the solar cell are basically the same as those in Example 1, except that no laser annealing treatment is performed when preparing the first patterned transparent conductive layer.

[0115] Example 3

[0116] The steps for preparing the solar cell are basically the same as those in Example 1, except that the carrier concentration of the first patterned transparent conductive layer is 5E20cm -3 .

[0117] Example 4

[0118] The steps for preparing the solar cell are basically the same as those in Example 1, except that the carrier concentration of the first patterned transparent conductive layer is 1E20 cm -3 .

[0119] Comparative Example 1

[0120] The steps for preparing the solar cell are basically the same as those in Example 1, except that: the first patterned transparent conductive layer is not prepared, and the conductive paste is directly printed on the surface of the first transparent conductive layer and cured at 100°C to obtain the first silver metal electrode.

[0121] Comparative Example 2

[0122] The steps for preparing the solar cell are basically the same as those in Example 1, except that the first patterned transparent conductive layer is not prepared, and the prepared first transparent conductive layer is directly subjected to laser annealing treatment.

[0123] The cell efficiency of the solar cells prepared in the above embodiments and comparative examples was tested, and the resistance between the transparent conductive layer and the first metal electrode was tested. The test results can be seen in Table 1. The cells can be tested using the current-voltage (JV) characteristic curve test method of the prior art, and the resistance can be measured using the TLM test method of the prior art.

[0124] Table 1

[0125]

[0126] By comparing Examples 1 and 2, it can be seen that in Example 1, after the laser annealing treatment is performed on the first patterned transparent conductive layer, the resistivity between the transparent conductive layer and the first metal electrode is lower, that is, there is better ohmic contact between the two, which helps to improve the conversion efficiency of the solar cell;

[0127] By comparing Examples 2 and 4, it can be seen that in Example 2, although the carrier concentration of the second patterned transparent conductive layer is increased, no laser annealing treatment is performed on the second patterned transparent conductive layer. In Example 4, although the carrier concentration of the second patterned transparent conductive layer is lower than that of Example 2, the laser annealing treatment is performed on the second patterned transparent conductive layer, so that the contact resistance between the second patterned transparent conductive layer and the first metal electrode is smaller. Therefore, it can be seen that laser annealing treatment can better improve the ohmic contact between the patterned transparent conductive layer and the first metal electrode.

[0128] By comparing Example 1 and the comparative example, it can be seen that by providing a transparent conductive layer with a higher carrier concentration as a contact medium between the first transparent conductive layer and the first metal electrode, the contact resistance between the transparent conductive layer and the first metal electrode can be further reduced, thereby improving the ohmic contact between the two.

[0129] The terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. Throughout the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0130] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0131] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A solar cell, characterized in that: include: substrate; a first charge transport layer, wherein the first charge transport layer is disposed on one side of the substrate; a perovskite light absorbing layer, wherein the perovskite light absorbing layer is disposed on a side of the first charge transport layer away from the substrate; a second charge transport layer, the second charge transport layer being arranged on a side of the perovskite light absorbing layer away from the substrate; a first transparent conductive layer, wherein the first transparent conductive layer is disposed on a side of the second charge transport layer away from the substrate; a first patterned transparent conductive layer, wherein the first patterned transparent conductive layer is disposed on a surface of the first transparent conductive layer away from the substrate, and a carrier concentration of the first patterned transparent conductive layer is greater than or equal to a carrier concentration of the first transparent conductive layer; A first metal electrode is disposed on the surface of the first patterned transparent conductive layer.

2. The solar cell according to claim 1, wherein The first patterned transparent conductive layer is a transparent conductive layer structure that has been subjected to laser annealing treatment.

3. The solar cell according to claim 1 or 2, characterized in that The substrate includes a silicon base cell and an interconnect layer between the silicon base cell and a first charge transport layer.

4. The solar cell according to claim 3, characterized in that The silicon substrate cell comprises: Silicon substrate; a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer, wherein the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are respectively arranged on the front side and the back side of the silicon substrate; a first doped silicon layer and a second doped silicon layer, wherein the first doped silicon layer is disposed on a side of the first intrinsic amorphous silicon layer away from the silicon substrate, and the second doped silicon layer is disposed on a side of the second intrinsic amorphous silicon layer away from the silicon substrate; a second transparent conductive layer, the transparent conductive layer being arranged on a side of the second doped silicon layer away from the silicon substrate; A second metal electrode is provided on a side of the second transparent conductive layer away from the silicon substrate.

5. The solar cell according to claim 4, wherein Also includes: A second patterned transparent conductive layer is provided on a surface of the second transparent conductive layer away from the silicon substrate, and a carrier concentration of the second patterned transparent conductive layer is greater than a carrier concentration of the second transparent conductive layer.

6. The solar cell according to claim 5, characterized in that The first patterned transparent conductive layer and the second patterned transparent conductive layer respectively meet at least one of the following conditions: The carrier concentration is 1E20 cm -3 -1E21 cm -3 ; Width is 20μm-100μm; Thickness is 5-100nm, The second patterned transparent conductive layer is a transparent conductive layer structure that has been subjected to laser annealing treatment. The carriers of the first transparent conductive layer meet at least one of the following conditions: The carrier concentration is 1E19 cm -3 -3E20 cm -3 ; The thickness is 5-100nm.

7. A method for preparing the solar cell according to any one of claims 1 to 6, characterized in that: include: providing a substrate; forming a first charge transport layer on one side of the substrate; forming a perovskite light absorbing layer on a side of the first charge transport layer away from the substrate; forming a second charge transport layer on a side of the perovskite light absorbing layer away from the substrate; depositing a first transparent conductive layer on a side of the second charge transport layer away from the substrate; Depositing a first patterned transparent conductive substrate on a surface of the first transparent conductive layer away from the substrate, and performing a first laser annealing on the first patterned transparent conductive substrate to obtain the first patterned transparent conductive layer, wherein the carrier concentration of the first patterned transparent conductive layer is greater than or equal to the carrier concentration of the first transparent conductive layer; A paste is printed on a surface of the first patterned transparent conductive layer away from the substrate to form a first metal electrode.

8. The method according to claim 7, characterized in that The preparation method of the substrate comprises: Depositing a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer on the opposite front and back sides of the silicon substrate respectively; Depositing a first doped silicon layer on a side of the first intrinsic amorphous silicon layer away from the silicon substrate, and depositing a second doped silicon layer on a side of the second intrinsic amorphous silicon layer away from the silicon substrate; Depositing a second transparent conductive layer on a side of the second doped silicon layer away from the silicon substrate, and depositing an interconnect layer on a side of the first doped silicon layer away from the silicon substrate; A paste is printed on a side of the second transparent conductive layer away from the silicon substrate to form a second metal electrode.

9. The method according to claim 8, characterized in that Also includes: After forming the second transparent conductive layer, performing a heating annealing treatment on the second transparent conductive layer; Alternatively, it also includes: depositing a second patterned transparent conductive substrate on the surface of the second transparent conductive layer away from the substrate, and performing a second laser annealing on the second patterned transparent conductive substrate to obtain the second patterned transparent conductive layer, and the carrier concentration of the second patterned transparent conductive layer is greater than or equal to the carrier concentration of the second transparent conductive layer.

10. The method according to claim 9, characterized in that The laser wavelengths of the first laser annealing and the second laser annealing are respectively 280-1500 nm.

11. The method according to claim 9, characterized in that The temperature of the heating annealing treatment is 180-200°C.

12. An electrical device, characterized in that: A solar cell comprising the solar cell according to any one of claims 1 to 6, or a solar cell prepared by the method according to any one of claims 7 to 11.

13. A power generation device, characterized in that: A solar cell comprising the solar cell according to any one of claims 1 to 6, or a solar cell prepared by the method according to any one of claims 7 to 11.

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