Passivating agent for solar cell, trans-structure perovskite solar cell and cell module

Abstract

The invention relates to the technical field of cells, in particular to a passivator for a solar cell, a trans-structure perovskite solar cell and a cell module. The passivator for the solar cell comprises a compound shown in a formula (I), wherein R1, R2, R4 and R5 are independently selected from hydrogen and fluorine; and R3 is fluorine. The passivator for the solar cell can react with a perovskite layer to construct a 2D / 3D heterojunction, transmission and extraction of carriers are improved, and the stability of the cell is improved; the introduced fluorine group can effectively inhibit the precipitation of divalent cations (such as Pb < 2 + >) in a perovskite layer, and the stability and performance of the cell are improved; in addition, the passivator for the solar cell uses bromine salt to replace iodine salt of a traditional passivator, the forbidden band width can be adjusted, and the stability of the perovskite solar cell is improved. # imgabs0 #

Description

Technical Field

[0001] The present invention relates to the field of battery technology, and in particular to a passivator for solar cells, an inverted perovskite solar cell, and a battery assembly. Background Art

[0002] Organic-inorganic hybrid perovskites, a novel photovoltaic material, have demonstrated remarkable optoelectronic properties in perovskite solar cells (PSCs), achieving power conversion efficiencies (PCEs) as high as 26.1%. The optoelectronic performance of PSCs significantly depends on the properties of the perovskite (PVK) layer and its interactions with the electron transport layer (ETL) and hole transport layer (HTL). Despite this, energy level matching between the charge transport layer (CTL) and the PVK layer has been a major technical challenge. This energy mismatch not only hinders the efficient collection and transfer of charge carriers but also compromises the overall performance and stability of the cell. Notably, surface defects in PVK films are a key factor contributing to device performance degradation, as the trap density at the surface is much higher than within the material, making interface modification a key research focus. To enhance the performance and long-term stability of PSCs, researchers have explored various strategies, such as solvent optimization, doping of PVK, and modification of the interfaces between the ETL and PVK layers or between PVK and the HTL layers.

[0003] In the field of interface engineering of PSCs, selecting appropriate chemical groups is an effective method, especially in terms of defect passivation effect. Therefore, it is urgent to provide a passivating agent for solar cells with excellent performance to improve the performance and long-term stability of perovskite solar cells. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present invention provides a passivator for solar cells, an inverted perovskite solar cell, and a battery module. The passivator for solar cells can react with the perovskite layer to construct a 2D / 3D heterojunction, thereby improving the transport and extraction of carriers and improving the stability of the battery; the introduced fluorine groups can effectively inhibit the divalent cations (such as Pb) in the perovskite layer. 2+ ) precipitation, thereby improving the stability and performance of the battery; in addition, the solar cell passivator uses bromide salt instead of the iodine salt of the traditional passivator, which can adjust the band gap width and improve the stability of the perovskite solar cell.

[0005] To this end, the first aspect of the present invention provides a passivator for solar cells, wherein the passivator for solar cells comprises a compound represented by formula (I):

[0006]

[0007] in:

[0008] R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine;

[0009] R3 is fluorine.

[0010] The solar cell passivator provided by the present invention can react with the perovskite layer in the solar cell to construct a 2D / 3D heterojunction, thereby improving the carrier transport and extraction performance and improving the stability of the battery. The compound structure represented by formula (I) contains a fluorine group, which can effectively inhibit the divalent cations (such as Pb) in the perovskite layer. 2+ ) precipitation, thereby improving the stability and performance of the battery; in addition, the solar cell passivator uses bromide salt instead of the iodine salt of the traditional passivator, which can adjust the band gap width and improve the stability of the perovskite solar cell.

[0011] According to an embodiment of the present invention, in the compound represented by formula (I), R1, R2, R4, and R5 are all hydrogen or all fluorine.

[0012] The second aspect of the present invention provides the use of the compound represented by formula (I) in passivating inverse structure perovskite solar cells.

[0013]

[0014] in:

[0015] R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine;

[0016] R3 is fluorine.

[0017] A third aspect of the present invention provides an inverted perovskite solar cell, wherein the inverted perovskite solar cell comprises a passivation layer, and the raw materials for preparing the passivation layer comprise the passivator for solar cells according to the first aspect.

[0018] The solar cell passivator provided by the present invention can be used to construct a passivation layer in an inverted perovskite solar cell, thereby significantly improving the overall performance and long-term stability of the cell.

[0019] According to an embodiment of the present invention, the inverted structure perovskite solar cell further includes a conductive substrate, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer;

[0020] The conductive substrate, hole transport layer, perovskite layer, passivation layer, electron transport layer and electrode layer are stacked in sequence.

[0021] According to an embodiment of the present invention, the inverted perovskite solar cell satisfies at least one of the following conditions:

[0022] The conductive substrate is made of at least one of ITO, FTO, AZO and GZO;

[0023] The hole transport layer includes materials such as SAM, NiO x , PEDOT:PSS, PTAA;

[0024] The material of the perovskite layer is ABX3, and the band gap of the perovskite layer is 0.9eV-3.0eV;

[0025] The A-site ion includes a monovalent cation of at least one of cesium, rubidium, methylamino, and formamidinium;

[0026] The B-site ions include divalent cations of at least one of lead, copper, zinc, gallium, tin, and calcium;

[0027] The X-site ion includes a monovalent anion of at least one of iodine, bromine, chlorine, fluorine, and thiocyanate;

[0028] The material of the electron transport layer includes C 60 , PCBM, SnO2, ZnO at least one;

[0029] The material of the electrode layer includes at least one of Ag, Au, and Cu.

[0030] According to an embodiment of the present invention, the inverted-structure perovskite solar cell satisfies at least one of the following conditions: the thickness of the conductive substrate is 100 nm-200 nm;

[0031] The thickness of the hole transport layer is 20nm-30nm;

[0032] The thickness of the perovskite layer is 10 nm-100 μm;

[0033] The thickness of the electron transport layer is 15nm-25nm;

[0034] The thickness of the electrode layer is 400nm-800nm.

[0035] According to an embodiment of the present invention, the inverted-structure perovskite solar cell further includes a buffer layer and a transparent conductive layer;

[0036] The buffer layer is provided on the surface of the electron transport layer away from the passivation layer;

[0037] The transparent conductive layer is arranged on a surface of the buffer layer away from the electron transport layer.

[0038] According to an embodiment of the present invention, the inverted perovskite solar cell satisfies at least one of the following conditions:

[0039] The material of the buffer layer includes SnO2, PCBM, BCP, MoO x At least one of;

[0040] The material of the transparent conductive layer includes at least one of IZO, ITO, and FTO;

[0041] The thickness of the buffer layer is 15nm-30nm;

[0042] The thickness of the transparent conductive layer is 30nm-60nm.

[0043] A fourth aspect of the present invention provides a battery assembly, which includes the inverted-structure perovskite solar cell described in the third aspect.

[0044] The beneficial effects of the present invention compared to the prior art are as follows:

[0045] The solar cell passivator provided by the present invention can improve the performance and stability of perovskite solar cells in many aspects. It can react with the perovskite layer to construct a 2D / 3D heterojunction, which is beneficial to carrier transport and extraction. At the same time, the surface 2D perovskite (i.e., the passivation layer) has the function of preventing water and oxygen corrosion; the introduced fluorine groups can react with the non-coordinating divalent cations (such as Pb) in the perovskite layer. 2+ ) interactions, thereby strengthening the ionic bonds with divalent cations and effectively suppressing the divalent cations in the perovskite layer (such as Pb 2+ ) precipitation, thereby improving the performance and stability of the battery; in addition, the solar cell passivator uses bromine salt instead of iodine salt in the traditional passivator, which can adjust the band gap width and improve the stability and performance of the battery.

[0046] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments with reference to the accompanying drawings, in which:

[0048] Figure 1 One of the structural schematic diagrams of the inverted perovskite solar cell provided by the present invention is shown;

[0049] Figure 2 The second structural schematic diagram of the inverted perovskite solar cell provided by the present invention is shown.

[0050] Reference numerals:

[0051] Inverted perovskite solar cell 100, conductive substrate 101, hole transport layer 102, perovskite layer 103, passivation layer 104, electron transport layer 105, electrode layer 106, buffer layer 107, transparent conductive layer 108. DETAILED DESCRIPTION

[0052] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be understood as limiting the present invention.

[0053] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features defined as "first" or "second" may explicitly or implicitly include one or more of such features. Furthermore, in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0054] The endpoints of the ranges and any values disclosed herein are not limited to the precise ranges or values, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoints of each range, the endpoints of each range and individual point values, and the individual point values can be combined with each other to obtain one or more new numerical ranges, which should be considered to be specifically disclosed herein.

[0055] In order to make the present invention more easily understood, certain technical and scientific terms are specifically defined below. Unless otherwise clearly defined elsewhere in this document, all other technical and scientific terms used herein have the meaning commonly understood by those skilled in the art to which the present invention belongs.

[0056] In this document, the terms “include” or “comprising” are open expressions, that is, including the contents specified in the present invention, but not excluding other contents.

[0057] As used herein, the terms "optionally," "optional," or "optionally" generally mean that the subsequently described event or circumstance may but need not occur, and that the description includes instances where the event or circumstance occurs and instances where it does not.

[0058] According to an embodiment of the present invention, a first aspect of the present invention provides a passivator for a solar cell, wherein the passivator for a solar cell comprises a compound represented by formula (I):

[0059]

[0060] in:

[0061] R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine;

[0062] R3 is fluorine.

[0063] The solar cell passivator provided by the present invention can react with non-coordinating divalent cations (such as Pb 2+ ) and other defect sites to effectively combine and construct a 2D / 3D heterojunction to improve device performance and stability. Fluorine is known for its significant electronegativity, hydrophobicity and excellent chemical stability. When ionized, the fluorine groups introduced into the solar cell passivator can react with non-coordinating divalent cations (such as Pb) in the perovskite layer. 2+ ) interactions, thereby strengthening the ionic bonds with non-coordinating divalent cations and effectively suppressing the divalent cations in the perovskite layer (such as Pb 2+ ) precipitate, thereby improving the performance and stability of the battery. In addition, the solar cell passivator converts the iodide ions (I - ) is replaced by bromide ion (Br - ), because I - The chemical activity is high, vacancy defects are easily formed, and I - The aggregation of vacancies accelerates the photo-oxygen induced decomposition of perovskite, which has a negative impact on the operational stability of its device. Based on this, the solar cell passivator uses bromide salt instead of iodine salt, which can adjust the band gap width and improve the stability of the battery and performance stability.

[0064] According to a specific embodiment of the present invention, R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine, and preferably R1, R2, R4, and R5 are all hydrogen or all fluorine, that is, the compound represented by formula (I) has the structure represented by formula (II) and the structure represented by formula (III).

[0065]

[0066] According to an embodiment of the present invention, the second aspect of the present invention provides the use of a compound represented by formula (I) in a passivated inverse-structure perovskite solar cell.

[0067]

[0068] in:

[0069] R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine;

[0070] R3 is fluorine.

[0071] According to a specific embodiment of the present invention, R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine, and preferably, R1, R2, R4, and R5 are all hydrogen or all fluorine.

[0072] According to an embodiment of the present invention, a third aspect of the present invention provides an inverted perovskite solar cell, wherein the inverted perovskite solar cell includes a passivation layer, and the raw materials for preparing the passivation layer include the passivator for solar cells described in the first aspect.

[0073] The solar cell passivator provided by the present invention can be used to construct a passivation layer in trans-structured perovskite solar cells, significantly improving the overall performance and long-term stability of the cells. Specifically, the solar cell passivator can only be used in trans structures due to the energy level mismatch in the regular structure.

[0074] According to a specific embodiment of the present invention, the inverted perovskite solar cell has Figure 1 As shown in the structure, the inverted structure perovskite solar cell 100 further includes a conductive substrate 101, a hole transport layer 102, a perovskite layer 103, an electron transport layer 105 and an electrode layer 106;

[0075] The conductive substrate 101 , the hole transport layer 102 , the perovskite layer 103 , the passivation layer 104 , the electron transport layer 105 and the electrode layer 106 are stacked in sequence.

[0076] According to a specific embodiment of the present invention, the material of the conductive substrate 101 is not particularly limited. As some specific examples, the material of the conductive substrate 101 includes but is not limited to ITO (indium tin oxide), FTO (fluorine-doped tin oxide), AZO (antimony tin oxide), and GZO (gallium-doped zinc oxide).

[0077] According to a specific embodiment of the present invention, the thickness of the conductive substrate 101 is 100 nm-200 nm. As some specific examples, the thickness of the conductive substrate 101 can be 100 nm, 120 nm, 200 nm, etc.

[0078] According to a specific embodiment of the present invention, the preparation method of the conductive substrate 101 is not particularly limited. As some specific examples, the preparation method of the conductive substrate 101 includes but is not limited to magnetron sputtering, chemical vapor deposition, and spraying.

[0079] According to a specific embodiment of the present invention, the material of the hole transport layer 102 is not particularly limited. As some specific examples, the material of the hole transport layer 102 includes but is not limited to SAM (self-assembled monolayer), NiO x (nickel oxide, 0.8≤x≤1.3), PEDOT:PSS, PTAA (polytriarylamine).

[0080] According to a specific embodiment of the present invention, the thickness of the hole transport layer 102 is 20 nm-30 nm. As some specific examples, the thickness of the hole transport layer 102 can be 20 nm, 25 nm, 30 nm, etc.

[0081] According to a specific embodiment of the present invention, the preparation method of the hole transport layer 102 is not particularly limited. As some specific examples, the preparation method of the hole transport layer 102 includes but is not limited to magnetron sputtering, spin coating, inkjet printing, slit coating, and doctor blade coating.

[0082] According to a specific embodiment of the present invention, the material of the perovskite layer 103 is ABX3, and the band gap of the perovskite layer 103 is 0.9eV-3.0eV. As some specific examples, the band gap of the perovskite layer 103 can be 0.9eV, 1eV, 2eV, 3eV, etc.

[0083] According to a specific embodiment of the present invention, the type of the A-site ion is not particularly limited. As some specific examples, the A-site ion includes a monovalent cation of at least one of cesium, rubidium, methylamino, and formamidinium.

[0084] According to a specific embodiment of the present invention, the type of B-site ions is not particularly limited. As some specific examples, the B-site ions include divalent cations of at least one of lead, copper, zinc, gallium, tin, and calcium.

[0085] According to a specific embodiment of the present invention, the type of X-site ions is not particularly limited. As some specific examples, the X-site ions include monovalent anions of at least one of iodine, bromine, chlorine, fluorine, and thiocyanate ions.

[0086] According to a specific embodiment of the present invention, the thickness of the perovskite layer 103 is 10 nm-100 μm. As some specific examples, the thickness of the perovskite layer 103 can be 10 nm, 100 nm, 1 μm, 10 μm, 100 μm, etc.

[0087] According to a specific embodiment of the present invention, the preparation method of the perovskite layer 103 is not particularly limited. As some specific examples, the preparation method of the perovskite layer 103 includes but is not limited to spin coating, slit coating, doctor blade coating, spray coating, screen printing, and inkjet printing.

[0088] According to a specific embodiment of the present invention, the composition of the passivation layer 104 is as described above and will not be repeated here.

[0089] According to a specific embodiment of the present invention, the material of the electron transport layer 105 is not particularly limited. As some specific examples, the material of the electron transport layer 105 includes but is not limited to C 60, PCBM ((6,6)-phenyl-C61-butyric acid methyl ester), SnO2, ZnO.

[0090] According to a specific embodiment of the present invention, the thickness of the electron transport layer 105 is 15 nm-25 nm. As some specific examples, the thickness of the electron transport layer 105 can be 15 nm, 20 nm, 25 nm, etc.

[0091] According to a specific embodiment of the present invention, the preparation method of the electron transport layer 105 is not particularly limited. As some specific examples, the preparation method of the electron transport layer 105 includes but is not limited to thermal evaporation, spin coating, atomic layer deposition, and magnetron sputtering.

[0092] According to a specific embodiment of the present invention, the material of the electrode layer 106 is not particularly limited. As some specific examples, the material of the electrode layer 106 includes but is not limited to Ag, Au, and Cu.

[0093] According to a specific embodiment of the present invention, the thickness of the electrode layer 106 is 400 nm-800 nm. As some specific examples, the thickness of the electrode layer 106 may be 400 nm, 600 nm, 800 nm, etc.

[0094] According to a specific embodiment of the present invention, the preparation method of the electrode layer 106 is not particularly limited. As some specific examples, the preparation method of the electrode layer 106 includes but is not limited to thermal evaporation, magnetron sputtering, electron beam evaporation, and solution method.

[0095] According to a specific embodiment of the present invention, the inverted structure perovskite solar cell may also have Figure 2 As shown in the structure, the inverted perovskite solar cell 100 further includes a buffer layer 107 and a transparent conductive layer 108. The buffer layer 107 is arranged on the surface of the electron transport layer 105 away from the passivation layer 104; the transparent conductive layer 108 is arranged on the surface of the buffer layer 107 away from the electron transport layer 105.

[0096] According to a specific embodiment of the present invention, the material of the buffer layer 107 is not particularly limited. As some specific examples, the material of the buffer layer 107 includes but is not limited to SnO2, PCBM, BCP (batocupurine), MoO x .

[0097] According to a specific embodiment of the present invention, the thickness of the buffer layer 107 is 15 nm-30 nm. As some specific examples, the thickness of the buffer layer 107 can be 15 nm, 20 nm, 30 nm, etc.

[0098] According to a specific embodiment of the present invention, the preparation method of the buffer layer 107 is not particularly limited. As some specific examples, the preparation method of the buffer layer 107 includes but is not limited to thermal evaporation, magnetron sputtering, and electron beam evaporation.

[0099] According to a specific embodiment of the present invention, the material of the transparent conductive layer 108 is not particularly limited. As some specific examples, the material of the transparent conductive layer 108 includes but is not limited to IZO (indium zinc oxide), ITO, and FTO.

[0100] According to a specific embodiment of the present invention, the thickness of the transparent conductive layer 108 is 30 nm-60 nm. As some specific examples, the thickness of the transparent conductive layer 108 can be 30 nm, 40 nm, 60 nm, etc.

[0101] According to a specific embodiment of the present invention, the preparation method of the transparent conductive layer 108 is not particularly limited. As some specific examples, the preparation method of the transparent conductive layer 108 includes but is not limited to thermal evaporation, magnetron sputtering, and electron beam evaporation.

[0102] According to a specific embodiment of the present invention, the inverted-structure perovskite solar cell further includes a glass substrate, and the glass substrate is disposed on a surface of the conductive substrate away from the hole transport layer.

[0103] According to a specific embodiment of the present invention, the type of the inverted-structure perovskite solar cell is not particularly limited, and may be a single-junction perovskite solar cell or a tandem perovskite solar cell.

[0104] According to a specific embodiment of the present invention, the type of the tandem perovskite solar cell is not particularly limited. As some specific examples, the tandem perovskite solar cell includes a two-terminal tandem cell, a three-terminal tandem cell, or a four-terminal tandem cell.

[0105] According to an embodiment of the present invention, a fourth aspect of the present invention provides a battery assembly, wherein the battery assembly includes the inverted-structure perovskite solar cell according to the third aspect.

[0106] Below, the scheme of the present invention will be explained in conjunction with embodiment.It will be understood by those skilled in the art that the following examples are only used to illustrate the present invention and should not be regarded as limiting the scope of the present invention.In the embodiment, if specific technology or conditions are not indicated, the technology or conditions described in the literature in this area or the product instructions are used.The reagents or instruments used are not indicated by the manufacturer, and are all conventional products that can be obtained by commercial purchase.

[0107] Example 1

[0108] A method for preparing an inverted perovskite solar cell comprises the following steps:

[0109] A 3 mm thick transparent glass was used as the substrate, and an ITO layer with a thickness of 200 nm was prepared by magnetron sputtering. A NiO layer with a thickness of 20 nm was prepared by magnetron sputtering. X The SAM layer with a thickness of 3 nm was prepared by spin coating, and the perovskite layer with a thickness of 500 nm was prepared by blade coating. 0.8 Cs 0.2 Pb(I 0.8 Br 0.2 )3, using the compound represented by formula (II) as a passivating agent to prepare a passivation layer on the surface of the perovskite layer, the thickness of the passivation layer is 2nm, and thermal evaporation is used to prepare a C 60 layer, a SnO2 layer with a thickness of 15 nm was prepared by thermal evaporation, an IZO layer with a thickness of 50 nm was prepared by thermal evaporation, and an Ag electrode layer with a thickness of 400 nm was prepared by thermal evaporation.

[0110]

[0111] Example 2

[0112] The only difference between this embodiment and embodiment 1 is that a passivation layer is prepared on the surface of the perovskite layer using the compound represented by formula (III) as a passivating agent, and the thickness of the passivation layer is 2 nm:

[0113]

[0114] Comparative Example 1

[0115] The only difference between this comparative example and Example 1 is that the compound represented by formula (IV) is used as a passivating agent to prepare a passivation layer on the surface of the perovskite layer, and the thickness of the passivation layer is 2 nm:

[0116]

[0117] Comparative Example 2

[0118] The only difference between this comparative example and Example 1 is that the compound represented by formula (V) is used as a passivating agent to prepare a passivation layer on the surface of the perovskite layer, and the thickness of the passivation layer is 2 nm:

[0119]

[0120] Comparative Example 3

[0121] A method for preparing a regular structure perovskite solar cell comprises the following steps:

[0122] A transparent glass with a thickness of 3 mm was used as the substrate, and an ITO layer with a thickness of 200 nm was prepared by magnetron sputtering, a SnO2 layer with a thickness of 3 nm was prepared by spin coating, and a perovskite layer with a thickness of 500 nm was prepared by spin coating. 0.85 MA 0.15 Pb(I 0.95 Br 0.05 )3. A passivation layer is prepared on the surface of the perovskite layer using the compound represented by formula (II) as a passivator. The thickness of the passivation layer is 2 nm. A spiro-OMeTAD layer with a thickness of 5 nm (as a hole transport layer) is prepared by spin coating. An Ag electrode layer with a thickness of 100 nm is prepared by thermal evaporation.

[0123] Test Case

[0124] The photovoltaic performance of the solar cells prepared in the examples and comparative examples was tested, and the specific steps were as follows:

[0125] (1) Photoelectric conversion test:

[0126] The current-voltage curves of the batteries prepared in the above examples and comparative examples were tested to obtain photovoltaic data. The specific testing method was to place the battery under a light source of 100 mW / cm 2 Obtained by connecting a source meter using the four-wire method under AM 1.5G simulated sunlight.

[0127] (2) Battery stability test:

[0128] The test method is to place the battery under a light source of 100mW / cm 2 Under AM 1.5G simulated sunlight, continuous maximum power point tracking (MPPT) was used to conduct light aging tests.

[0129] Relevant test data are shown in Table 1, where Jsc refers to short-circuit current density, Voc refers to open-circuit voltage, FF refers to fill factor, Eff refers to conversion efficiency, and T80 refers to the time it takes for the efficiency to drop to 80% of the initial value.

[0130] Table 1

[0131]

[0132]

[0133] The test results are shown in Table 1. Examples 1 and 2 exhibit significantly improved photoelectric performance and cell stability compared to Comparative Examples 1-3. The cell in Comparative Example 3 utilizes a formal structure, while the energy levels of the solar cell passivator provided by the present invention do not match those of the formal structure, resulting in poor performance across all aspects of the resulting cell.

[0134] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0135] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A passivating agent for solar cells, characterized in that: The passivating agent for solar cells includes a compound represented by formula (I): in: R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine; R3 is fluorine.

2. The passivator for solar cells according to claim 1, wherein In the compound represented by formula (I), R1, R2, R4, and R5 are all hydrogen or all fluorine.

3. Application of the compound represented by formula (I) in passivated inverse structure perovskite solar cells, in: R1, R2, R4, and R5 are each independently selected from hydrogen and fluorine; R3 is fluorine.

4. An inverted perovskite solar cell, characterized in that: The inverted perovskite solar cell comprises a passivation layer, and the raw materials for preparing the passivation layer comprise the passivator for solar cells according to claim 1 or 2.

5. The inverted perovskite solar cell according to claim 4, characterized in that: The inverted perovskite solar cell further includes a conductive substrate, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer; The conductive substrate, hole transport layer, perovskite layer, passivation layer, electron transport layer and electrode layer are stacked in sequence.

6. The inverted perovskite solar cell according to claim 5, characterized in that: The inverted perovskite solar cell satisfies at least one of the following conditions: The conductive substrate is made of at least one of ITO, FTO, AZO and GZO; The hole transport layer includes materials such as SAM, NiO x , PEDOT:PSS, PTAA; The material of the perovskite layer is ABX3, and the band gap of the perovskite layer is 0.9eV-3.0eV; The A-site ion includes a monovalent cation of at least one of cesium, rubidium, methylamino, and formamidinium; The B-site ions include divalent cations of at least one of lead, copper, zinc, gallium, tin, and calcium; The X-site ion includes a monovalent anion of at least one of iodine, bromine, chlorine, fluorine, and thiocyanate; The material of the electron transport layer includes C 60 , PCBM, SnO2, ZnO at least one; The material of the electrode layer includes at least one of Ag, Au, and Cu.

7. The inverted perovskite solar cell according to claim 5, characterized in that: The inverted perovskite solar cell satisfies at least one of the following conditions: The thickness of the conductive substrate is 100nm-200nm; The thickness of the hole transport layer is 20nm-30nm; The thickness of the perovskite layer is 10 nm-100 μm; The thickness of the electron transport layer is 15nm-25nm; The thickness of the electrode layer is 400nm-800nm.

8. The inverted perovskite solar cell according to claim 5, characterized in that: The inverted structure perovskite solar cell further includes a buffer layer and a transparent conductive layer; The buffer layer is provided on the surface of the electron transport layer away from the passivation layer; The transparent conductive layer is arranged on a surface of the buffer layer away from the electron transport layer.

9. The inverted perovskite solar cell according to claim 8, characterized in that: The inverted perovskite solar cell satisfies at least one of the following conditions: The material of the buffer layer includes SnO2, PCBM, BCP, MoO x At least one of; The material of the transparent conductive layer includes at least one of IZO, ITO, and FTO; The thickness of the buffer layer is 15nm-30nm; The thickness of the transparent conductive layer is 30nm-60nm.

10. A battery assembly, characterized in that: The battery assembly includes the inverted-structure perovskite solar cell according to any one of claims 4 to 9.

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