Detection system, detection method and defect detection equipment

Abstract

The invention relates to the technical field of semiconductor front channel detection, discloses a dark field detection system and method, and particularly relates to a detection system, a detection method, defect detection equipment and a defect detection method. The device comprises a light source, a first lens group and an adjusting lens group, oblique incident beams and vertical incident beams with different incident angles are formed by controlling loading or separating of the adjusting lens group on an incident beam propagation path, and adjustment of different incident modes of the incident beams is achieved. And the oblique incident light beam and the vertical incident light beam share one main incident light beam, so that the redundancy of the system is reduced.

Description

Technical Field

[0001] The present application relates to the field of semiconductor front-end detection technology, and is a dark field detection system and method, specifically a detection system, a detection method and defect detection equipment. Background Art

[0002] Wafers serve as the substrate for chips. Surface defects on wafers can cause the resulting chips to fail, reducing chip yield and increasing manufacturing costs. Therefore, a common approach is to perform surface defect inspection on wafers before or during chip production. Wafer surface defect inspection involves detecting the presence and location of defects such as grooves, particles, and scratches on the wafer surface.

[0003] At present, dark field scanning systems are commonly used for wafer surface defect detection. The system usually uses a beam splitter prism at the laser outlet to divide the light beam into two incidence modes: vertical incidence and oblique incidence to obtain the scattering information of the defect, and uses the same means to detect and reflect the scattering information of the defect in different directions. Generally, the vertical incidence system includes a set of beam expanders, shaping lenses, and focusing lenses, and the vertical incidence system also includes a set of beam expanders, shaping lenses, and focusing lenses, which are distributed at different positions in the system. However, the beam expanders, shaping lenses, and focusing lenses usually use the same type of lens or lens group, which increases the size of the equipment and the basic cost. In addition, the two subsystems need to be assembled and debugged separately, resulting in problems such as reduced light energy utilization and a cumbersome and complicated debugging process. Summary of the Invention

[0004] In order to address the technical gaps in the prior art, the embodiments of the present application provide a detection system, a detection method, and a defect detection device, which can improve the accuracy of the detection results by periodically adjusting the incident light beam type in real time.

[0005] In order to achieve the above objectives, the technical solutions adopted in the embodiments of the present application are as follows:

[0006] In a first aspect, a detection system is provided, comprising: a light source for generating an incident light beam; a first mirror group, disposed on a propagation path of the incident light beam, for changing a propagation direction of the incident light beam so that the incident light beam forms an oblique incident light beam relative to an object to be detected and forms a first incident light spot on the surface of the object to be detected; an adjustment mirror group, optionally disposed on the propagation path of the incident light beam, for changing a propagation direction of the incident light beam so that the incident light beam propagates to a second mirror group, the second mirror group being configured to change a propagation direction of the incident light beam so that the incident light beam forms a perpendicular incident light beam relative to the object to be detected and forms a second incident light spot on the surface of the object to be detected; the first incident light spot and the second incident light spot have the same size and the same incident position.

[0007] In another practicable manner, the first mirror group includes at least one reflective mirror for adjusting a propagation direction of the incident light beam and an incident angle of the incident light beam relative to the object to be detected.

[0008] In another practicable embodiment, the first mirror group further includes a hollow retroreflector having an inner cavity structure, wherein a reflective film is coated in the cavity of the hollow retroreflector; the reflector is arranged on the retroreflective light path of the hollow retroreflector, and the incident light beam is projected onto the reflector after being reflected multiple times by the hollow retroreflector.

[0009] In another practicable manner, the adjustment mirror group includes at least one reflecting mirror, which is used to adjust the propagation direction of the incident light beam so that the incident light beam is received by the second mirror group.

[0010] In another practicable manner, the second mirror group includes at least one reflector for receiving the incident light beam reflected by the adjustment mirror group, and also includes at least one reflector for projecting the incident light beam onto the surface of the object to be inspected.

[0011] In another practicable manner, the adjustment mirror group includes at least one reflective mirror for receiving the incident light beam, and also includes at least one reflective mirror for projecting the incident light beam to the second mirror group.

[0012] In another practicable manner, the second mirror group includes at least one reflector for receiving the incident light beam reflected by the adjustment mirror group, and the reflector is further used to project the incident light beam onto the surface of the object to be inspected.

[0013] In another practicable manner, a polarizer is further included, which is arranged on the propagation path of the incident light beam and is used to change the polarization state of the incident light beam.

[0014] In another practicable manner, a beam expander and a shaping mirror are further provided on the propagation path of the incident light beam, for adjusting the shape of the incident light beam.

[0015] In another practicable manner, a focusing objective lens is further included which is arranged on the propagation path of the incident light beam.

[0016] In a second aspect, a detection method is provided, which is applied to the detection system described in any of the above items, and the method includes: determining the type of the incident light beam according to a scanning period; and controlling the adjustment mirror group to enter or move away from the incident light beam propagation path according to the type of the incident light beam, and forming a corresponding first incident light beam or a second incident light beam; each of the scanning periods is only used to generate one type of incident light beam.

[0017] In another practicable manner, controlling the adjustment mirror group to enter or move away from the incident light beam propagation path according to the incident light beam type includes: controlling the adjustment mirror group to adjust the height position relative to the object to be detected according to the incident light beam type.

[0018] According to a third aspect, a defect detection device is provided, comprising: a carrier for placing an object to be detected and moving it along an equidistant spiral line; a detection system as described in any one of the above items, for sequentially generating a first incident light spot and a second incident light spot having the same size and the same incident position to the surface of the object to be detected based on a scanning period, and generating corresponding first scattered light beams and second scattered light beams through the object to be detected; a detector assembly, for sequentially receiving the first scattered light beam and the second scattered light beam, and generating corresponding scattered light signals; and a processing center, for processing the scattered light signals to obtain detection results.

[0019] The embodiments of the present invention bring the following beneficial effects:

[0020] In the technical solution provided in the embodiments of the present application, an oblique incident light beam and a vertical incident light beam with different incident angles are formed by controlling the loading or unloading of the adjustment mirror group on the propagation path of the incident light beam, thereby realizing adjustment of different incident modes of the incident light beam. The oblique incident light beam and the vertical incident light beam share a main incident light beam, which reduces the redundancy of the system.

[0021] Other features and advantages of the present disclosure will be set forth in the following description, or some features and advantages may be inferred or unambiguously determined from the description, or may be learned by practicing the above-mentioned technology of the present disclosure.

[0022] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0024] The methods, systems, and / or programs in the accompanying drawings will be further described according to exemplary embodiments. These exemplary embodiments will be described in detail with reference to the drawings. These exemplary embodiments are non-limiting exemplary embodiments, wherein example numerals represent similar structures in the various views of the drawings.

[0025] Figure 1 Schematic diagram of the detection system structure;

[0026] Figure 2 Schematic diagram for optimizing the detection system structure;

[0027] Figure 3 Schematic diagram of the first structure of the hollow retroreflector;

[0028] Figure 4 Schematic diagram of the second structure of the hollow retroreflector;

[0029] Figure 5 Schematic diagram for optimizing the detection system structure;

[0030] Figure 6 Schematic diagram of the detection method flow chart;

[0031] Figure 7 A schematic diagram of the storage medium structure. DETAILED DESCRIPTION

[0032] In order to better understand the above technical solution, the technical solution of the present application is described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of the present application and the specific features in the embodiments are detailed descriptions of the technical solution of the present application, rather than limitations on the technical solution of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0033] In the following detailed description, numerous specific details are set forth by way of example in order to provide a thorough understanding of the relevant teachings. However, it will be apparent to one skilled in the art that the present application can be practiced without these details. In other instances, well-known methods, procedures, systems, compositions, and / or circuits have been described at a relatively high level, without detail, to avoid unnecessarily obscuring aspects of the present application.

[0034] Flowcharts are used in this application to illustrate the execution processes performed by the system according to the embodiments of the present application. It should be clearly understood that the execution processes of the flowcharts may not be executed in sequence. Instead, these execution processes may be executed in reverse order or simultaneously. In addition, at least one additional execution process may be added to the flowchart. One or more execution processes may be deleted from the flowchart.

[0035] An embodiment of the present application provides a dark field detection system, which is applied to dark field detection. A light spot is formed by projecting a laser of a specific wavelength onto the surface of the object to be tested, thereby realizing detection of the object to be tested. The object to be tested is a wafer to be tested. In this embodiment, the "wafer" generally refers to a substrate formed of a semiconductor or non-semiconductor material. Examples include (but are not limited to) single crystal silicon, gallium arsenide, gallium nitride, and indium phosphide. Such substrates can typically be found and / or processed in semiconductor manufacturing facilities. In some cases, a wafer may include only a substrate (i.e., a bare chip). Alternatively, a wafer may include one or more layers of different materials formed on a substrate. One or more layers formed on a wafer may be "patterned" or "unpatterned". For example, a wafer may include multiple bare chips with repeatable pattern features.

[0036] Dark-field laser scattering, an effective detection method, is based on the scattering of light. Specifically, the device illuminates the wafer surface with a high-precision laser beam. When the laser encounters surface defects, it generates scattered light. This scattered light signal is collected and analyzed by a highly sensitive detector, accurately reflecting the distribution of tiny nanometer-scale defects on the wafer surface.

[0037] The generated laser beams include oblique incident beams and vertical incident beams. These two types of laser beams can collect scattered light signals of different defect types at the same wafer location, thereby achieving a balance between detection efficiency and defect coverage.

[0038] In the prior art, in order to obtain the above-mentioned two-beam system, a beam splitter prism is usually used at the laser exit to split the incident light beam into a vertical incident light beam and an oblique incident light beam. In addition, other functional devices are configured in the above-mentioned two incident light beams, such as beam expanders, shaping lenses, and focusing lenses. However, in actual use, the applicant found that because the above-mentioned functional devices usually use the same type of lens or lens group, they are configured separately in the two incident light beams, which increases the size of the equipment and the basic cost. In addition, the two incident light beams need to be assembled and debugged separately, which also leads to problems such as reduced light energy utilization and a cumbersome and complicated debugging process.

[0039] Based on the above technical background and in order to solve the above technical problems, this embodiment provides a detection system, which integrates the oblique incident light beam and the vertical incident light beam through the optical path structure setting, reducing the problem of increased cost caused by the separate configuration of multiple functional devices, and the oblique incident light beam and the vertical incident light beam share the same set of functional devices, thereby reducing the difficulty of system assembly and debugging, thereby solving technical problems such as reduced light energy utilization and complex debugging process.

[0040] For details about its structure, please refer to Figure 1A detection system 100 is used for wafer detection, including a light source 110, a first lens group 120, an adjustment lens group 130, and a second lens group 140. The light source is used to provide an incident light beam to the wafer 20 to be inspected. The incident light beam is a laser beam, and the light source is correspondingly configured as a laser.

[0041] In one embodiment, the light source is positioned parallel to the wafer to be inspected, and the propagation path of the incident light beam generated thereby is also parallel to the wafer to be inspected. An adjustment lens assembly is movably positioned along the propagation path of the incident light beam to control the propagation path of the current incident light beam. In this embodiment, the propagation path of the incident light beam includes an oblique incident propagation path and a perpendicular incident propagation path. The control logic is implemented by inserting or removing the adjustment lens assembly into the propagation path of the incident light beam, causing the incident light beam to propagate to the second lens assembly or the first lens assembly based on the changes in the adjustment lens assembly.

[0042] According to the needs of the detection purpose, the incident light beam's incident mode is changed by configuring an adjustment lens group in the propagation path of the incident light beam.

[0043] Specifically, in this embodiment, the first and second mirror groups are respectively used to change the propagation direction of the incident light beam so that the incident light beam is incident at an oblique angle or perpendicular angle, respectively, onto the surface of the wafer to be inspected. The first mirror group is positioned along the propagation path of the incident light beam. The adjustment mirror group is positioned closer to the light source relative to the first mirror group. This configuration aims to redirect the incident light beam, originally intended for reception by the first mirror group, so that it is received by the second mirror group when the adjustment mirror group is positioned along the propagation path of the incident light beam, thereby converting the oblique incident light beam originally generated by the first mirror group into a perpendicular incident light beam. When the adjustment mirror group is removed from the propagation path of the incident light beam, the incident light beam follows its original propagation path to the first mirror group, where it is generated by the first mirror group as an oblique incident light beam onto the wafer to be inspected. Ultimately, the incident light beam passes through the first and second mirror groups, forming corresponding first and second incident light spots on the surface of the wafer to be inspected at different times.

[0044] It can be understood that when the adjustment lens group in this embodiment is loaded into the propagation path of the incident light beam, the propagation direction of the incident light beam can be changed and transmitted to the second lens group. When the adjustment lens group is removed from the propagation path of the incident light beam, the propagation direction of the incident light beam is not changed and is transmitted to the first lens group.

[0045] The adjustment mirror assembly can be set as a reflector, and the movement direction corresponding to the loading and unloading can be referred to in Figure 1 As shown by the arrow in .

[0046] Please continue reading Figure 1In this embodiment, the first mirror group includes a reflector, and the incident light beam can produce a change in propagation direction and angle through the reflector, thereby generating an oblique incident light beam to the surface of the wafer to be inspected.

[0047] In this embodiment, the second mirror assembly 140 includes two reflectors, namely a first reflector 141 and a second reflector 142. The first reflector is used to receive the incident light beam transmitted by the adjustment mirror assembly and transmit the incident light beam to the second reflector. The second reflector is used to change the propagation direction and incident angle of the incident light beam so that the incident light beam is perpendicular to the wafer to be inspected.

[0048] It is worth noting that although the first lens group, the second lens group, and the adjustment lens group described above only describe the optical devices configured therein, those skilled in the art should be aware that the above-mentioned lens groups include not only the corresponding optical devices, but also the mechanical structures supporting them. For example, the adjustment lens group is a lens barrel structure, and the components include the corresponding reflectors and a motor connected to the lens barrel, which drives the lens barrel to move to achieve loading and unloading.

[0049] With respect to the detection system provided in the above embodiment, by controlling the loading or unloading of the adjustment mirror group on the propagation path of the incident light beam and through the first mirror group and the second mirror group, adjustment of different incident modes of the incident light beam is achieved. The oblique incident light beam and the vertical incident light beam share the same incident light beam, which reduces the redundancy of the system.

[0050] However, it is worth noting that although the above-mentioned detection system can solve the problems of overall system complexity, control accuracy and complex debugging in the existing technology, the optical path of the oblique incident light path in this structure is long, and scattered signals will be generated when collecting scattered light because the first mirror group is not in the optimal structure.

[0051] In another embodiment, and to meet the requirement that the focal lengths of the focusing lenses for oblique and vertical incident beams be the same, the optical paths of the oblique and vertical incident beams formed by the incident beam passing through the focusing lens and the adjustment lens assembly are maintained consistent. In this embodiment, based on the above-described detection system, a hollow retroreflector is provided in the propagation path of the oblique incident beam to compensate for the missing distance from the focusing lens to the wafer surface, thereby reducing the system complexity caused by the longer beam propagation process.

[0052] For details, please refer to Figure 2 As shown, the first mirror group 130 includes a hollow retroreflector 131 disposed on the propagation path of the incident light beam and a reflector 132 disposed on the retroreflective light path corresponding to the hollow retroreflector.

[0053] Among them, see Figure 3 and Figure 4A schematic diagram of the structure of the hollow retroreflector provided in this embodiment. The hollow retroreflector is an optical device with an inner cavity structure, which has three orthogonal surfaces, and a laser reflective film is coated on the three orthogonal surfaces. The incident light beam enters the cavity of the hollow retroreflector, and is reflected multiple times by the laser reflective film to generate a retroreflected light beam. The retroreflected light beam has the same angle as the incident light beam and is projected onto the reflector in the first mirror group, forming an oblique incident light beam. In addition, the incident light beam of the hollow retroreflector is reflected from the surface to which it is pointed based on its directivity during the reflection process. The incident light beam entering the cavity of the hollow retroreflector is reflected from the other two surfaces and output from the retroreflection, so that the incident light beam and the retroreflected light beam are parallel and in opposite directions.

[0054] It's worth noting that, in this embodiment, an incident light beam entering the hollow retroreflector cavity can be received at the vertex or at any point on the three faces. When the incident light beam is received at the vertex, the incident and retroreflected light beams are collinear. However, when the incident light beam is received at any point on the three faces, the incident and retroreflected light beams are not collinear. In this embodiment, it is preferred to position the vertex of the hollow retroreflector offset from the incident light beam.

[0055] In summary, compared with the previous embodiment, this embodiment reduces the problem of system complexity by providing a hollow retroreflector on the incident light beam.

[0056] See Figure 5 In one embodiment, to control the shape and size of the first and second incident light spots, a functional device is positioned along the incident light beam propagation path to shape and change the state of the incident light beams. Furthermore, the functional device is positioned between the light source and the adjustment assembly, allowing both obliquely incident and vertically incident light beams to be shared.

[0057] Specifically, the functional components are arranged in sequence based on the light propagation path, including a polarizer 151, a beam expander 152, a shaper 153, and a focusing lens 154. The polarizer is used to change the polarization state of the incident light beam, while the beam expander and shaper are used to change the shape and size of the incident light beam.

[0058] To further reduce system complexity, reflectors are installed between multiple functional components to mitigate the space utilization issues caused by the incident light beam propagating only in the horizontal direction. In this embodiment, corresponding reflectors are installed between the beam expander and the shaper, and between the shaper and the focusing lens, increasing the vertical propagation of the incident light beam and improving the overall system's space utilization.

[0059] In this embodiment, a controller is further provided in the system for adjusting and controlling the spatial position of the adjustment mirror assembly, and the controller adjusts the system by executing the following steps. For details about these steps, please refer to Figure 6 In this embodiment, a detection method is configured in the controller to implement the adjustment of the detection system. The method specifically includes the following steps:

[0060] Step S61: Determine the type of the incident light beam according to the scanning period.

[0061] In this embodiment, each scanning cycle corresponds to a type of incident beam. The type of incident beam in this embodiment primarily refers to its angle of incidence with the wafer to be inspected, which can be either an oblique incident beam or a vertical incident beam. The current scanning cycle determines whether the incident beam is oblique or vertical, and the optical path of the system is controlled based on the determined incident beam type, thereby ensuring that the incident beam is projected onto the wafer surface to be inspected in the desired manner.

[0062] Step S62: Control the adjustment lens group according to the type of the incident light beam to enter or move away from the incident light beam propagation path, and form a corresponding incident light beam.

[0063] Based on the incident beam type determined in step S61, in this embodiment, the target incident beam is generated by controlling the spatial position of the adjustment mirror assembly. The control result is to control the adjustment mirror assembly to enter or move away from the incident beam propagation path, and the control target is the height position of the adjustment mirror assembly. The adjustment logic is to configure position sensors at key positions in the system to obtain the spatial state corresponding to the current adjustment mirror assembly, where the key position refers to the boundary position corresponding to different types of incident beams. The preset type-position mapping relationship is then used to determine whether the spatial position of the adjustment mirror assembly corresponding to the current scanning cycle meets the requirements. If the requirements are met, the adjustment mirror assembly state is maintained; if not, the adjustment mirror assembly state is adjusted.

[0064] In this embodiment, for clarity and simplicity of control logic, only two height positions are set for the adjustment lens group, one is a first height position for generating an oblique incident light beam, and the other is a second height position for generating a vertical incident light beam.

[0065] Specifically, when the incident beam type corresponding to the current scanning cycle is an oblique incident beam, the position of the adjustment mirror group obtained by the sensor is used to determine whether the current position is at the first height position. If not, the adjustment mirror group is controlled to move upward to the first height position; if so, no height adjustment is performed. Conversely, when the incident beam type corresponding to the current scanning cycle is a vertical incident beam, the position of the adjustment mirror group obtained by the sensor is used to determine whether the current position is at the second height position. If not, the adjustment mirror group is controlled to move downward to the second height position; if so, no height adjustment is performed.

[0066] Preferably, in another embodiment, a sensor is not provided for determining the current height position of the adjusting mirror assembly. Instead, a storage unit is configured in the controller to generate a data table to record each height control of the adjusting mirror assembly and the height information of the current scanning cycle, and automatically adjust the height after querying the table according to the change of the scanning cycle.

[0067] See Figure 7 In another embodiment, a defect detection device 100 is provided. The device comprises a carrier, a detector assembly, a processing center, and an illumination system according to any of the two aforementioned embodiments. The carrier is used to carry a wafer to be inspected and to move along an equidistant spiral to follow the movement of the wafer to be inspected. The detector assembly is used to receive a scattered light beam generated by an incident light beam generated by the inspection system and passing through the wafer to be inspected, generating a scattered light signal. The processing center is used to process the scattered light signal to obtain an inspection result.

[0068] In this embodiment, the incident beam includes a first incident beam and a second incident beam, which form corresponding first and second incident light spots on the surface of the wafer to be inspected, respectively. The first and second incident light spots have the same size. The first incident beam is an oblique incident beam, and the second incident beam is a vertical incident beam. Both are formed through steps S61 and S62 according to the current scan cycle of the defect inspection equipment.

[0069] Specifically, the current scanning cycle and the type of incident beam corresponding to that scanning cycle are determined. Based on the incident beam type, the height of the mirror assembly is controlled and adjusted to a target height to achieve the configuration of the corresponding incident beam type. This incident beam type is then projected onto the wafer to be inspected, which moves along an equidistant spiral. The incident beam remains unchanged, while the wafer to be inspected moves along a specific path based on the stage. The incident beam passes through the wafer to be inspected, generating a scattered beam. A scattering signal corresponding to the scattered beam is obtained through the detector assembly. Scattering signals for all locations on the wafer to be inspected are obtained based on the complete movement of the wafer to be inspected.

[0070] After completing the scanning of all sites, the scanning cycle is configured according to the detection needs to start a new scanning cycle. And based on the new scanning cycle and the corresponding incident beam type, the height of the current adjustment mirror group is adjusted to realize the configuration of the corresponding type of incident beam, and the incident beam is changed from the type of the previous scanning cycle. If the incident beam type corresponding to the previous scanning cycle is an oblique incident beam, the incident beam type corresponding to the new stage scanning cycle is a vertical incident beam; accordingly, the adjustment mirror group is lowered by lowering the current height position so that the turntable that previously carried the incident beam propagation path is adjusted to carry the incident beam propagation path, thereby forming a vertical incident beam. The vertical incident beam is projected onto the wafer to be detected, and the scanning of all sites on the wafer to be detected is realized according to the equidistant spiral movement of the wafer to be detected. The detector also collects the scattered signals of all sites on the wafer to be detected.

[0071] In this embodiment, the detector assembly is disposed on the scattered light beam path. The scattered light beam path includes two paths: a path corresponding to a large-angle detection channel and a path corresponding to a small-angle detection channel. The detector assembly also includes two sets of detectors disposed on the two paths, one set for collecting small-angle scattered light and the other for collecting large-angle scattered light.

[0072] The splitting of the scattered light beams corresponding to the two paths is achieved using an elliptical mirror and a beam splitter. An elliptical mirror is placed on the main path of the scattered light beam, and a beam splitter is placed within the elliptical mirror. The beam splitter's reception range corresponds to the divergence range of the small-angle scattered light beam. The small-angle scattered light within the field of view is reflected by the beam splitter to a corresponding set of detectors. The scattered light beam not reflected by the beam splitter is the large-angle scattered light and is received by another set of detectors located at the light outlet of the elliptical mirror.

[0073] The two sets of detectors are respectively connected to the processing center to transmit the collected scattered light signals to the processing center.

[0074] The detection system, detection method and defect detection equipment provided in the embodiments of the present application realize switching between oblique incident light beams and vertical incident light beams by setting an adjustment mirror group capable of switching the incident light beam in the detection system, thereby reducing the size of the equipment, reducing the equipment investment cost and improving the debugging efficiency; and the same set of functional components can be used for oblique incident light beams and vertical incident light beams, thereby reducing lens processing and debugging errors and improving detection accuracy; by switching the beam setting, the disadvantage of light energy loss caused by the use of beam splitters in the prior art can be reduced, the light density at the wafer surface can be increased, and the detection sensitivity can be further improved.

[0075] See Figure 7The embodiment of the present invention further provides a readable medium 70, which stores computer-readable instructions 701. The computer-readable instructions 701 include instructions for executing the aforementioned detection method.

[0076] The functions and technical effects of the readable medium 70 provided in the embodiment of the present invention can be referred to the technical effects of the calibration method in the aforementioned embodiment, and will not be described in detail here.

[0077] It should be noted that in the several embodiments provided in this application, it should be understood that the disclosed systems, devices and / or methods can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units / modules is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or modules can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0078] The units / modules described as separate components may or may not be physically separate, and the components shown as units / modules may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the units / modules may be selected to achieve the objectives of this embodiment according to actual needs.

[0079] In addition, the functional units / modules in various embodiments of the present invention may be integrated into a single processing unit / module, each unit / module may exist physically separately, or two or more units / modules may be integrated into a single unit / module. The aforementioned integrated units / modules may be implemented in the form of hardware or hardware plus software functional units / modules.

[0080] The above-mentioned integrated units / modules implemented in the form of software functional units / modules can be stored in a computer-readable storage medium. The above-mentioned software functional units stored in a storage medium include a number of instructions for causing one or more processors of a computer device (which can be a personal computer, server, or network device, etc.) to perform some of the steps of the methods described in various embodiments of the present invention.

[0081] The above-mentioned integrated units / modules implemented in the form of software functional units / modules can be stored in a computer-readable storage medium. The above-mentioned software functional units stored in a storage medium include a number of instructions for causing one or more processors of a computer device (which can be a personal computer, server, or network device, etc.) to perform some of the steps of the methods described in various embodiments of the present invention.

[0082] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended solely to facilitate and simplify the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation, and therefore should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0083] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A detection system, characterized in that: The system comprises: a light source for generating an incident light beam; a first mirror group, disposed on the propagation path of the incident light beam, for changing the propagation direction of the incident light beam so that the incident light beam forms an oblique incident light beam relative to the object to be detected, and forms a first incident light spot on the surface of the object to be detected; an adjusting lens group, which can be optionally arranged on the propagation path of the incident light beam, and is used to change the propagation direction of the incident light beam so that the incident light beam propagates to the second lens group; The second mirror group is used to change the propagation direction of the incident light beam so that the incident light beam forms a vertical incident light beam relative to the object to be detected, and forms a second incident light spot on the surface of the object to be detected; the first incident light spot and the second incident light spot have the same size and the same incident position.

2. The detection system according to claim 1, characterized in that The first mirror group includes at least one reflecting mirror for adjusting the propagation direction of the incident light beam and the incident angle of the incident light beam relative to the object to be detected.

3. The detection system according to claim 2, characterized in that The first mirror group also includes a hollow retroreflector with an inner cavity structure, in which a reflective film is plated; the reflector is arranged on the retroreflective light path of the hollow retroreflector, and the incident light beam is projected onto the reflector after multiple reflections by the hollow retroreflector.

4. The detection system according to claim 1, characterized in that The adjustment mirror group includes at least one reflecting mirror, which is used to adjust the propagation direction of the incident light beam so that the incident light beam is received by the second mirror group.

5. The detection system according to claim 4, characterized in that: The second mirror group includes at least one reflecting mirror for receiving the incident light beam reflected by the adjusting mirror group, and also includes at least one reflecting mirror for projecting the incident light beam onto the surface of the object to be inspected.

6. The detection system according to claim 1, characterized in that The adjustment mirror group includes at least one reflecting mirror for receiving the incident light beam, and also includes at least one reflecting mirror for projecting the incident light beam to the second mirror group.

7. The detection system according to claim 6, characterized in that The second mirror group includes at least one reflecting mirror for receiving the incident light beam reflected by the adjusting mirror group, and the reflecting mirror is further used to project the incident light beam onto the surface of the object to be inspected.

8. The detection system according to claim 1, characterized in that It also includes a polarizer arranged on the propagation path of the incident light beam, which is used to change the polarization state of the incident light beam.

9. The detection system according to claim 1, characterized in that: It also includes a beam expander and a shaping mirror arranged on the propagation path of the incident light beam, which are used to adjust the shape of the incident light beam.

10. The detection system according to claim 1, characterized in that: It also includes a focusing objective lens arranged on the propagation path of the incident light beam.

11. A detection method, characterized in that: Applied to the detection system according to any one of claims 1 to 10, the method comprising: Determine the type of incident light beam according to the scanning period; The mirror group is controlled and adjusted to enter or move away from the incident beam propagation path according to the type of the incident beam, and form a corresponding first incident beam or a second incident beam; each of the scanning cycles is only used to generate one type of incident beam.

12. The detection method according to claim 11, characterized in that The controlling and adjusting the mirror group to enter or move away from the incident light beam propagation path according to the incident light beam type includes: controlling and adjusting the height position of the mirror group relative to the object to be detected according to the incident light beam type.

13. A defect detection device, characterized in that: include: The stage is used to place the object to be inspected and moves along an equidistant spiral line; The detection system according to any one of claims 1 to 10, configured to sequentially generate a first incident light spot and a second incident light spot having the same size and the same incident position on the surface of the object to be detected based on a scanning period, and to generate corresponding first scattered light beams and second scattered light beams via the object to be detected; a detector assembly, configured to sequentially receive the first scattered light beam and the second scattered light beam, and generate corresponding scattered light signals; The processing center is used to process the scattered light signal to obtain the detection result.

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