Display panel, control method thereof, and display device

Abstract

The application discloses a display panel and a control method thereof, and a display device. The display panel comprises a driving back plate, a light-emitting and spectrum sensing set layer arranged on one side of the driving back plate, a plurality of sub-pixels and a plurality of spectrum sensors, the plurality of spectrum sensors are arranged in one-to-one correspondence with the plurality of sub-pixels, the sub-pixel is a micro light-emitting diode, each sub-pixel is provided with a groove away from the surface of the driving back plate, the depth of the groove is less than the thickness of the sub-pixel, the spectrum sensor is arranged in the groove, the spectrum sensor is a gallium nitride-based micro spectrum sensor, an optical gap layer is arranged on the surface of the light-emitting and spectrum sensing set layer away from the driving back plate, the optical gap layer is a light-transmitting layer, a microlens layer is arranged on the side of the optical gap layer away from the driving back plate, and the microlens layer comprises a plurality of microlenses arranged in one-to-one correspondence with the plurality of sub-pixels. Through the above arrangement, the problem of non-uniformity of brightness and chrominance of the Micro LED display panel after Micro LED mass transfer is solved.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display panel and its control method and display device. Background Technology

[0002] Micro LED (micro light-emitting diode) display panels are prone to uneven brightness and color after the Micro LED mass transfer process, which can easily lead to patches when displaying solid color images.

[0003] In related technologies, offline optical inspection, integrated photodiodes, or algorithm-driven compensation are commonly used to compensate for the color or brightness of display panels. However, offline optical inspection and compensation is difficult to meet the cycle time requirements of production lines, and external optical systems cannot accurately align micron-level pixels, resulting in large detection errors. Integrated photodiodes can easily lead to a decrease in the pixel aperture ratio of the display panel, resulting in a loss of peak brightness, and the problem of perceived unevenness still exists after compensation. Algorithm-driven compensation is ineffective for color shift caused by wavelength differences and is difficult to solve the problem of optical crosstalk between adjacent pixels. Summary of the Invention

[0004] This application mainly provides a display panel and its control method and display device to solve the problem of uneven brightness and color in Micro LED display panels after the mass transfer of Micro LEDs.

[0005] To solve the above-mentioned technical problems, one technical solution adopted in this application is: to provide a display panel, comprising:

[0006] Drive backplane;

[0007] A light emission and spectral sensing layer is disposed on one side of the driving backplate, including multiple sub-pixels and multiple spectral sensors, with each spectral sensor corresponding to one of the multiple sub-pixels; each sub-pixel is a miniature light-emitting diode; each sub-pixel has a groove on its surface away from the driving backplate, the depth of the groove being less than the thickness of the sub-pixel; the spectral sensor is disposed in the groove, and the spectral sensor is a gallium nitride-based miniature spectral sensor.

[0008] An optical gap layer is disposed on the surface of the light-emitting and spectral sensing aggregation layer away from the driving backplate; the optical gap layer is a light-transmitting layer.

[0009] A microlens layer is disposed on the side of the optical gap layer away from the driving backplate, and includes multiple microlenses, with each microlens corresponding to a multiple sub-pixels.

[0010] In some embodiments, the sub-pixel includes a first n-type gallium nitride layer, an InGaN / GaN quantum well layer, and a first p-type gallium nitride layer stacked sequentially; the spectral sensor includes a light absorption layer and an electrode contact layer, the electrode contact layer includes a second n-type gallium nitride layer and a second p-type gallium nitride layer spaced apart, the light absorption layer is located between the second n-type gallium nitride layer and the second p-type gallium nitride layer, and the light absorption layer is an InGaN / GaN multiple quantum well structure;

[0011] The groove is positioned close to the edge of the sub-pixel.

[0012] In some implementations, the area of ​​the spectral sensor occupies 0.5%-4.5% of the area of ​​the sub-pixel.

[0013] In some embodiments, the ratio between the diameter of the microlens and the diameter of the sub-pixel is greater than or equal to 0.1 and less than or equal to 0.3; the microlens is positioned corresponding to the center of the sub-pixel.

[0014] And / or, the refractive index of the microlens is n, n = 1.53 ± 0.02;

[0015] And / or, the transmittance of the microlens is greater than 99%;

[0016] And / or, the material of the microlens is a UV-curable resin;

[0017] And / or, the material of the optical gap layer is silicon nitride;

[0018] And / or, the thickness of the optical gap layer is 4.9 micrometers to 5.1 micrometers;

[0019] And / or, the surface roughness of the optical gap layer away from the drive backplate is less than 0.5 nanometers.

[0020] To solve the above-mentioned technical problems, another technical solution adopted in this application is: to provide a display device, including a control circuit and any of the display panels described above; wherein, the control circuit includes:

[0021] The data acquisition module is used to acquire the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels in real time; where λ is the wavelength of the sub-pixel, λ is in the range of 380 nm to 780 nm, and (x, y) are the spatial coordinates of the sub-pixel.

[0022] The data processing module includes a multi-dimensional compensation quantity generation module; the multi-dimensional compensation quantity generation module is used to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel based on the spectral power distribution S(λ, x, y) and the radiance value L(x, y), and to calculate the luminance compensation current component and the chromaticity compensation current component respectively, and generate the compensation current.

[0023] The driving module includes a digital-to-analog converter, a pulse width modulation controller, and a switching transistor. The digital-to-analog converter converts the digital signal of the compensation current into an analog voltage signal and inputs it to the pulse width modulation controller. The pulse width modulation controller converts the analog voltage signal into a pulse signal. The pulse signal controls the on / off state of the switching transistor to regulate the pixel current of the sub-pixel in order to output the first frame of the display image.

[0024] In some embodiments, the display panel further includes a temperature sensor disposed on the driving backplane for acquiring the temperature value of the display panel; the temperature sensor is a four-channel temperature sensor.

[0025] The data processing module further includes a temperature drift correction module; the temperature drift correction module is used to calculate and correct the compensation current based on the obtained temperature value of the display panel, as well as the brightness compensation current component and the chromaticity compensation current component.

[0026] The driving module further includes a level shifter, which is used to receive the pulse signal, convert the level of the pulse signal and output it to the switching transistor.

[0027] In some embodiments, the formula for calculating the color coordinates of the CIE 1976 uniform colorimetric scale is as follows:

[0028] ;

[0029] ;

[0030] in:

[0031] ;

[0032] ;

[0033] ;

[0034] in, This is the main wavelength offset. =5nm;

[0035] The formula for calculating the brightness compensation current component is as follows:

[0036] ;

[0037] Where γ is the gamma coefficient, γ=2.2; L target L is the target brightness value. target =1000 nits; L max L represents the maximum brightness of the display panel. max =1200 nits; K1 is the gain coefficient, K1=0.15 amperes;

[0038] The chromaticity compensation current component is:

[0039] ;

[0040] Where K2 = 0.08 amperes;

[0041] ;

[0042] The reference color coordinates are ( , (), , The values ​​are (0.198, 0.468).

[0043] ;

[0044] in, V(λ) represents the dominant wavelength of the pixel; the value of V(λ) follows the CIE standard. As a color difference sensitivity adjustment factor, when λ > 570 nm, =1.3; when λ < 500 nm, =1.0; when 500 nm ≤ λ ≤ 570 nm, =1.1;

[0045] The formula for calculating the compensation current is revised as follows:

[0046] ;

[0047] Among them, T ref For reference temperature, T ref =25℃; T is the temperature value of the display panel obtained; I default For the default drive current, I default =10 milliamps; The efficiency temperature coefficient of the sub-pixel. =-0.003 / Kelvin;

[0048] The duty cycle of the pulse signal is:

[0049] ;

[0050] Among them, I max For the maximum allowable current, I max =20 mA; the frequency of the pulse signal is 4 kHz.

[0051] To solve the above-mentioned technical problems, another technical solution adopted in this application is: providing a control method for a display panel, applicable to any of the display panels described above; comprising:

[0052] During a first time period, an optical scan is performed on multiple sub-pixels of the display panel to obtain the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels in real time, and the temperature value of the display panel is also obtained in real time; wherein, the first time period is from 0 milliseconds to 20 milliseconds; λ is the wavelength of the sub-pixel, which is in the range of 380 nanometers to 780 nanometers; (x, y) are the spatial coordinates of the sub-pixel;

[0053] During the second time period, based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y), the luminance compensation current component and the chromaticity compensation current component are calculated in parallel, and the correction compensation current is calculated based on the acquired temperature value of the display panel; wherein, the second time period is from 21 milliseconds to 50 milliseconds;

[0054] During the third time period, the data of the compensation current is acquired, the digital signal of the compensation current is converted into a pulse signal, and the on / off state of the switching transistor is controlled to regulate the pixel current of the multiple sub-pixels and output the first frame of the display screen; wherein, the third time period is from 51 milliseconds to 100 milliseconds.

[0055] In some implementations, it also includes:

[0056] After the first frame of the display is output, the pixel current of the sub-pixel whose refresh rate change of the display panel is greater than a preset threshold is recalibrated within each preset time period; wherein the preset time period is in the range of 50 seconds to 70 seconds, and the preset threshold is in the range of 1.5% to 2.5%.

[0057] In some implementations, the first time period includes an adjacent first sub-time period and a second sub-time period;

[0058] The steps of optically scanning the multiple sub-pixels of the display panel during the first time period, acquiring the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels in real time, and acquiring the temperature value of the display panel in real time include:

[0059] Within the first sub-time period, the spectral power distribution S(λ, x, y) and radiance value L(x, y) of a plurality of sub-pixels of the display panel are captured at a preset rate; wherein the preset rate is in the range of 950 frames per second to 1050 frames per second; and the first sub-time period is from 0 milliseconds to 18 milliseconds.

[0060] During the second sub-time period, the temperature value of the display panel is acquired in real time; wherein, the second sub-time period is 19 milliseconds to 20 milliseconds;

[0061] And / or, the second time period includes an adjacent third sub-time period and a fourth sub-time period;

[0062] The steps of calculating the luminance compensation current component and the chromaticity compensation current component in parallel based on the acquired spectral power distribution S(λ, x, y) and the radiance value L(x, y) during the second time period, and calculating the correction compensation current based on the acquired temperature value of the display panel, include:

[0063] During the third sub-time period, the luminance compensation current component and the chromaticity compensation current component are calculated in parallel based on the obtained spectral power distribution S(λ, x, y) and the radiance value L(x, y); wherein, the third sub-time period is from 21 milliseconds to 45 milliseconds;

[0064] During the fourth sub-time period, the compensation current is calculated and corrected based on the obtained temperature value of the display panel, the brightness compensation current component, and the chromaticity compensation current component; wherein, the fourth sub-time period is from 46 milliseconds to 50 milliseconds.

[0065] The beneficial effects of this application are as follows: Unlike existing technologies, this application discloses a display panel and its control method and display device. The display panel includes: a driving backplate; a light-emitting and spectral sensing aggregation layer disposed on one side of the driving backplate, including multiple sub-pixels and multiple spectral sensors, with each spectral sensor corresponding to one of the multiple sub-pixels; each sub-pixel is a micro-light-emitting diode; each sub-pixel has a groove on its surface away from the driving backplate, the depth of the groove being less than the thickness of the sub-pixel, and a spectral sensor is disposed within the groove, the spectral sensor being a gallium nitride-based micro-spectral sensor; an optical gap layer disposed on the surface of the light-emitting and spectral sensing aggregation layer away from the driving backplate, the optical gap layer being a light-transmitting layer; and a microlens layer disposed on the side of the optical gap layer away from the driving backplate, including multiple microlenses, with each microlens corresponding to one of the multiple sub-pixels. With the above configuration, grooves are directly formed on the surface of the sub-pixels, and the spectral sensor is integrated into the grooves of the sub-pixels. The spectral sensor is a gallium nitride-based micro-spectral sensor, which can be fabricated using the same process as the sub-pixels. The spectral sensor has little impact on the pixel aperture ratio, and the microlens size can be precisely matched to the sub-pixels. This enables nanometer-level in-situ monitoring of the luminescence characteristics of each sub-pixel, which helps to solve the problem of uneven brightness and color in Micro LED display panels after the mass transfer of Micro LEDs. Attached Figure Description

[0066] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0067] Figure 1 This is a cross-sectional schematic diagram of an embodiment of the display panel provided in the first embodiment of this application;

[0068] Figure 2 yes Figure 1 A top view schematic diagram of the light emission and spectral sensing layer of the provided display panel;

[0069] Figure 3 yes Figure 1 A schematic diagram of the sub-pixels of the provided display panel and the cross-section of the spectral sensor;

[0070] Figure 4 This is a schematic diagram of an embodiment of the display device provided in the second embodiment of this application;

[0071] Figure 5 This is a flowchart illustrating one embodiment of the display panel control method provided in the third embodiment of this application;

[0072] Figure 6 yes Figure 5 A flowchart illustrating step S1 of the provided control method for the display panel.

[0073] Figure 7 yes Figure 5 A flowchart illustrating step S2 of the provided control method for the display panel.

[0074] Icon labels:

[0075] 300. Display device; 200. Control circuit; 201. Data acquisition module; 202. Data processing module; 2021. Multi-dimensional compensation quantity generation module; 2022. Temperature drift correction module; 203. Drive module; 2031. Digital-to-analog converter; 2032. Pulse width modulation controller; 2033. Switching transistor; 2034. Level shifter; 100. Display panel; 1. Drive backplane; 11. Substrate; 12. Drive circuit 1. Layer; 2. Light emission and spectral sensing layer; 21. Sub-pixel; 211. First n-type gallium nitride layer; 212. InGaN / GaN quantum well layer; 213. First p-type gallium nitride layer; 22. Spectral sensor; 221. Second n-type gallium nitride layer; 222. Light absorption layer; 223. Second p-type gallium nitride layer; 224. Electrode contact layer; 23. Groove; 3. Optical gap layer; 4. Microlens layer; 41. Microlens; 5. Temperature sensor. Detailed Implementation

[0076] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0077] The terms "first," "second," and "third" used in the embodiments of this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0078] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a mutually exclusive, independent, or alternative embodiment. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0079] See Figures 1 to 3 , Figure 1 This is a cross-sectional schematic diagram of an embodiment of the display panel provided in the first embodiment of this application. Figure 2 yes Figure 1 The provided schematic diagram shows a top view of the light emission and spectral sensing layer of the display panel. Figure 3 yes Figure 1 A schematic diagram of the sub-pixels of the provided display panel and the cross-section of the spectral sensor.

[0080] See Figures 1 to 3 The first embodiment of this application provides a display panel 100, which includes a driving backplate 1, a light-emitting and spectral sensing collection layer 2, an optical gap layer 3, and a microlens layer 4 stacked sequentially.

[0081] The light emission and spectral sensing aggregation layer 2 is disposed on one side of the driving backplate 1. Specifically, the driving backplate 1 includes a substrate 11 and a driving circuit layer 12 disposed on a surface of the substrate 11. The light emission and spectral sensing aggregation layer 2 is disposed on the side of the driving circuit layer 12 away from the substrate 11.

[0082] The light emission and spectral sensing layer 2 includes multiple sub-pixels 21 and multiple spectral sensors 22, with each spectral sensor 22 corresponding to one of the multiple sub-pixels 21. Specifically, each sub-pixel 21 has a groove 23 on its surface away from the driving backplate 1, the depth of which is less than the thickness of the sub-pixel 21. The multiple spectral sensors 22 are correspondingly disposed within the grooves 23 of the multiple sub-pixels 21. In some embodiments, the spectral sensors 22 are gallium nitride-based micro-spectral sensors.

[0083] In some embodiments, the sub-pixel 21 is a micro light-emitting diode (Micro LED), and every three adjacent sub-pixels 21 have different colors, namely red sub-pixel, green sub-pixel and blue sub-pixel. The electrodes of the sub-pixel 21 (not shown) are electrically connected to the driving circuit layer 12 of the driving backplane 1 so that the sub-pixel 21 can be driven to emit light through the driving circuit layer 12, thereby realizing the screen display function.

[0084] An optical gap layer 3 is disposed on the surface of the light-emitting and spectral sensing aggregation layer 2 away from the driving backplate 1, and the optical gap layer 3 is a light-transmitting layer. A microlens layer 4 is disposed on the side of the optical gap layer 3 away from the driving backplate 1. In some embodiments, the surface of the optical gap layer 3 away from the driving backplate 1 is planar, and the microlens layer 4 is disposed on the surface of the optical gap layer 3 away from the driving backplate 1. The microlens layer 4 includes a plurality of microlenses 41, and the plurality of microlenses 41 are disposed one-to-one with a plurality of sub-pixels 21. Specifically, the shape of the microlens 41 can be spherical, and the convex surface of the microlens 41 is disposed away from the driving backplate 1. The microlens layer 4 can convert the Lambertian divergent light field (e.g., 120° divergence angle) of the MicroLED into a directional beam.

[0085] It is understood that, through the above settings, a groove 23 is directly set on the surface of the sub-pixel 21, and the spectral sensor 22 is integrated into the groove 23 of the sub-pixel 21. The spectral sensor 22 is a gallium nitride-based micro spectral sensor. The spectral sensor 22 can be fabricated using the same process as the sub-pixel 21. The spectral sensor 22 has little impact on the pixel aperture ratio, and the size of the microlens 41 can be precisely matched to the sub-pixel 21. This enables nanometer-level in-situ monitoring of the light emission characteristics of each sub-pixel 21, which is conducive to solving the problem of uneven brightness and color in the Micro LED display panel 100 after the mass transfer of Micro LEDs.

[0086] In some implementations, sub-pixel 21 is a miniature light-emitting diode, such as... Figure 3As shown, sub-pixel 21 includes a first n-type gallium nitride layer 211, an InGaN / GaN quantum well layer 212, and a first p-type gallium nitride layer 213, which are stacked sequentially. Specifically, the thickness of the first n-type gallium nitride layer 211 can be in the range of 2.95 micrometers to 3.05 micrometers, and the Si doping concentration of the first n-type gallium nitride layer 211 is 5*10⁻⁶. 18 cm -3 The InGaN / GaN quantum well layer 212 is a multi-quantum well structure. For example, the InGaN / GaN quantum well layer 212 may include twelve alternating periods of In... 0.15 Ga 0.85 The N / GaN quantum well structure has a potential well layer with a thickness ranging from 2.4 nm to 2.6 nm, and a barrier layer with a thickness ranging from 9.5 nm to 10.5 nm. The first p-type gallium nitride layer 213 has a thickness ranging from 0.19 μm to 0.21 μm, and the Mg doping concentration of the first p-type gallium nitride layer 213 is 1*10⁻⁶. 20 cm -3 .

[0087] In some embodiments, the groove 23 is positioned close to the edge of the sub-pixel 21, and the spectral sensor 22 is positioned within the groove 23. This can more effectively avoid the influence of the spectral sensor 22 on the pixel aperture ratio of the sub-pixel 21 and ensure the luminous efficiency of the sub-pixel 21.

[0088] In some embodiments, the spectral sensor 22 includes a light absorption layer 222 and an electrode contact layer 224. The electrode contact layer 224 includes a second n-type gallium nitride layer 221 and a second p-type gallium nitride layer 223 spaced apart. The light absorption layer 222 is located between the second n-type gallium nitride layer 221 and the second p-type gallium nitride layer 223. The second n-type gallium nitride layer 221 is located on the side of the light absorption layer 222 closer to the driving backplate 1. The light absorption layer 222 is an InGaN / GaN multi-quantum-well structure, and the spectral sensor 22 is a PIN-type spectral sensor. The second n-type gallium nitride layer 221, the light absorption layer 222, and the second p-type gallium nitride layer 223 of the spectral sensor 22, along with the first n-type gallium nitride layer 211, the InGaN / GaN quantum well layer 212, and the first p-type gallium nitride layer 213 of the sub-pixel 21, can be fabricated using the same process within the same MOCVD (metal-organic chemical vapor deposition) reaction chamber. By setting the spectral sensor 22 to the above-described configuration, the influence of the spectral sensor 22 on the aperture ratio of the sub-pixel 21 can be more effectively avoided, thereby improving the display performance of the display panel 100. It is also easier to use the spectral sensor 22 to detect the spectral information of the sub-pixel 21, thus making it easier to solve the problem of uneven brightness and color of the Micro LED display panel 100.

[0089] The response range of the spectral sensor 22 covers the visible light band from 380nm to 780nm. The resolution of the spectral sensor 22 reaches 5 nanometers, which can accurately resolve the main wavelength shift of light and the color coordinate deviation of the sub-pixel 21. Specifically, the resolution accuracy of the spectral sensor 22 for the main wavelength shift can reach ±0.8 nanometers, and the resolution accuracy for the color coordinate deviation of the sub-pixel 21 can reach ±0.001.

[0090] In some embodiments, the depth of the groove 23 disposed on the surface of the sub-pixel 21 away from the driving backplate 1 is in the range of 0.29 micrometers to 0.31 micrometers, thereby making it easier to form the spectral sensor 22 in the groove 23.

[0091] In some embodiments, the thickness of the second n-type gallium nitride layer 221 of the spectral sensor 22 is 18 nanometers to 22 nanometers. The second n-type gallium nitride layer 221 is a heavily doped n-type gallium nitride semiconductor layer. Specifically, the Si doping concentration of the second n-type gallium nitride layer 221 is 5*10⁻⁶. 18 cm -3 The light-absorbing layer 222 can be In 0.3 Ga 0.7 In the N-type multi-quantum-well structure, the thickness of the light-absorbing layer 222 can be set to be in the range of 190 nm to 210 nm. The thickness of the second p-type gallium nitride layer 223 is 18 nm to 22 nm. The second p-type gallium nitride layer 223 is a heavily doped p-type gallium nitride semiconductor layer. Specifically, the Mg doping concentration of the second p-type gallium nitride layer 223 is 3*10⁻⁶. 19 cm -3 .

[0092] In some embodiments, the optical gap layer 3 is made of silicon nitride (Si3N4), and / or the thickness of the optical gap layer 3 is 4.9 micrometers to 5.1 micrometers; in one specific embodiment, the thickness of the optical gap layer 3 is 5.0 micrometers. Using silicon nitride as the material for the optical gap layer 3 and setting its thickness within the aforementioned range balances structural stability and optical performance.

[0093] In some embodiments, the surface roughness of the optical gap layer 3 away from the driving backplate 1 is less than 0.5 nanometers, thereby making the surface of the optical gap layer 3 away from the driving backplate 1 a relatively flat plane. This is beneficial to ensuring the processing accuracy of the microlens 41 disposed on the surface of the optical gap layer 3 away from the driving backplate 1, and is more conducive to solving the problem of uneven brightness and color in the Micro LED display panel 100, thereby facilitating the improvement of the display effect of the display panel 100.

[0094] In some embodiments, the microlens 41 is made of UV-curable resin, and / or the refractive index of the microlens 41 is n, n = 1.53 ± 0.02, and / or the transmittance of the microlens 41 is greater than 99%. The microlens 41 can be made of a high-transmittance UV-curable resin and formed on the surface of the optical gap layer 3 away from the driving backplate 1 using a nanoimprinting process. The transmittance and refractive index of the microlens 41 are set within the above-mentioned ranges to ensure that the microlens 41 has good optical performance and to ensure the utilization rate of the light emitted by the sub-pixel 21.

[0095] In some embodiments, the area of ​​the spectral sensor 22 occupies 0.5%-4.5% of the area of ​​the sub-pixel 21. For example, the sub-pixel 21 can be 20 micrometers in length and 10 micrometers in width, and the spectral sensor 22 can be a structure with a length and width of 1 micrometer. The spectral sensor 22 is positioned close to the edge of the sub-pixel 21, thereby more effectively avoiding the influence of the spectral sensor 22 on the pixel aperture ratio of the sub-pixel 21.

[0096] In other embodiments, the specific dimensions of the spectral sensor 22 and the sub-pixel 21 can be designed as needed, as long as the area of ​​the spectral sensor 22 accounts for 0.5%-4.5% of the area of ​​the sub-pixel 21, thereby reducing the impact of the spectral sensor 22 on the pixel aperture ratio.

[0097] In some embodiments, the ratio between the diameter of the microlens 41 and the diameter of the sub-pixel 21 is greater than or equal to 0.1 and less than or equal to 0.3, and the microlens 41 is positioned at the center of the sub-pixel 21. It can be understood that setting the diameter of the microlens 41 and the diameter of the sub-pixel 21 within the above range can achieve a balance between light-gathering efficiency and crosstalk suppression. Specifically, the light-gathering efficiency of the microlens 41 can reach greater than 85%, and the crosstalk suppression ratio can reach less than -30dB. This allows the microlens 41 to better convert the light from the sub-pixel 21, transforming the Lambertian divergent light field of the sub-pixel 21 into a directional beam. This effectively solves the optical path crosstalk problem between adjacent sub-pixels 21, significantly improves the detection signal-to-noise ratio, and thus better enhances the display effect of the display panel 100. In one specific embodiment, the ratio between the diameter of the microlens 41 and the diameter of the sub-pixel 21 is 0.2. For example, the diameter of the sub-pixel 21 is 20 micrometers and the diameter of the microlens 41 is 4 micrometers. This can achieve the best light-gathering efficiency and crosstalk suppression ratio, thereby more effectively improving the light-gathering and crosstalk suppression effects of the microlens 41.

[0098] In some embodiments, the light-emitting and spectral sensing aggregation layer 2 and the optical gap layer 3 of the display panel 100 are synchronously transferred to the driving backplate 1 of the display panel 100 through the same mass transfer process. Specifically, after the light-emitting and spectral sensing aggregation layer 2 and the optical gap layer 3 are formed on the sapphire substrate, the mass transfer process is used to transfer multiple sub-pixels 21 of the light-emitting and spectral sensing aggregation layer 2, the corresponding spectral sensors 22, and the corresponding optical gap layer 3 to the driving circuit layer 12 of the driving backplate 1 on the side away from the substrate 11. Then, a microlens layer 4 is formed on the side of the transferred optical gap layer 3 away from the driving backplate 1.

[0099] In some embodiments, a sapphire substrate is used, and a Micro LED epitaxial layer, a spectral sensor 22, and an optical gap layer 3 are sequentially constructed by metal-organic chemical vapor deposition (MOCVD) and plasma-enhanced chemical vapor deposition (PECVD).

[0100] In one specific embodiment, firstly, a Micro LED epitaxial layer is grown on a sapphire substrate. Specifically, the sapphire substrate is placed in the reaction chamber of an MOCVD equipment. Trimethylgallium (TMGa) at a constant temperature of 1050°C is introduced at a rate of 50 standard milliliters per minute (sccm) as the gallium source, ammonia (NH3) at 200 sccm as the nitrogen source, and silane (SiH4) at 5 sccm as the n-type dopant. The reaction chamber pressure is controlled at 300 mbar. Firstly, a first n-type gallium nitride layer 211 with a thickness of 3.0 micrometers is grown. The Si doping concentration of the first n-type gallium nitride layer 211 is 5*10⁻⁶. 18 cm -3 Subsequently, the process was switched to the multi-quantum-well growth stage, where 10 sccm of trimethylindium (TMIn) was introduced and the temperature was adjusted to 750°C, and twelve cycles of In were grown alternately. 0.15 Ga 0.85 An N / GaN quantum well structure was constructed, forming an InGaN / GaN quantum well layer 212, wherein the potential well layer has a thickness of 2.5 nm and the barrier layer has a thickness of 10 nm. Finally, a first p-type gallium nitride layer 213 with a thickness of 0.2 μm was grown at 950 °C, and the Mg doping concentration of the first p-type gallium nitride layer 213 was 1*10⁻⁶. 20 cm -3 The fabrication of the Micro LED epitaxial layer was completed.

[0101] Next, the spectral sensor 22 is integrated. Specifically, photoresist is spin-coated onto the surface of the wafer after the Micro LED epitaxial layer is fabricated. For example, the photoresist is AZ. The 5214E ​​wafer has a spin-coated photoresist thickness of 1.2 micrometers. A hollow pattern is formed in the region of the preset spectral sensor 22 using photolithography; for example, the hollow pattern has a length of 1 micrometer and a width of 1 micrometer. An inductively coupled plasma (ICP) etching system is used to etch and remove the first p-type gallium nitride layer 213 and the InGaN / GaN quantum well layer 212 in the preset spectral sensor 22 region using a Cl2 / BCl3 mixed gas (Cl2 to BCl3 flow ratio of 3:1) at a pressure of 5 mTorr, forming a groove 23. Specifically, the etching depth of the groove 23 is 0.3 micrometers. Then, the photoresist is removed. After photoresist removal, the wafer is placed back into the MOCVD reaction chamber, and TMI / TMGa / NH3 (TMIn, TMGa, and NH3 flow ratio of 1:1:200) is introduced at 850°C and 100 mBar, forming multiple micrometers of the wafer. Multiple spectral sensors 22 are grown within the grooves 23 of the LED epitaxial layer. Specifically, the structure of the spectral sensors 22 grown within the grooves 23 includes a second n-type gallium nitride layer 221, a light-absorbing layer 222, and a second p-type gallium nitride layer 223. For example, the thickness of the second n-type gallium nitride layer 221 is 20 nanometers, and the Si doping concentration of the second n-type gallium nitride layer 221 is 5*10⁻⁶. 18 cm -3 The light absorption layer 222 can be In 0.3 Ga 0.7 The N-type multi-quantum-well structure has a light-absorbing layer 222 with a thickness of 200 nm; the second p-type gallium nitride layer 223 has a thickness of 20 nm, and the Mg doping concentration of the second p-type gallium nitride layer 223 is 3*10⁻⁶. 19 cm -3 Multiple spectral sensors 22 are grown correspondingly within the grooves 23 of multiple Micro LED epitaxial layers to form a light emission and spectral sensing combined layer 2.

[0102] Next, the optical gap layer 3 is fabricated. Specifically, a silicon nitride thin film is deposited on the surface of the light-emitting and spectral sensing aggregation layer 2 using a PECVD device at 300°C. The reaction gases are silane (SiH4) and ammonia (NH3). The silane influx rate is 50 sccm, the ammonia influx rate is 200 sccm, the RF power is 350 W, and the deposition rate is 60 nm / min, until the thickness of the deposited silicon nitride thin film reaches 5.0 micrometers. After the silicon nitride thin film is deposited, the surface of the optical gap layer 3 away from the Micro LED epitaxial layer is polished using a chemical mechanical polishing (CMP) process. Specifically, Dow Chemical IC1010 polishing slurry is used, and the pressure is 3 psi, so that the surface roughness of the optical gap layer 3 is less than 0.5 nanometers, ensuring the forming accuracy of the microlens 41 subsequently fabricated on the surface of the optical gap layer 3.

[0103] After the optical gap layer 3 is fabricated, the light emission and spectral sensing aggregation layer 2 and the optical gap layer 3 are simultaneously transferred to the driving circuit layer 12 of the driving backplate 1 using a mass transfer process, and the Micro LED of the light emission and spectral sensing aggregation layer 2 is electrically connected to the driving circuit layer 12. For example, the mass transfer process can be completed using an ASM AMICRA M300 mass transfer device, whose robotic arm positioning accuracy is controlled within ±0.8 micrometers. The transfer process is carried out in a Class 1000 cleanroom environment. After the transfer, the electrodes of the Micro LED are electrically connected to the driving circuit layer 12 through eutectic bonding. Specifically, the bonding temperature is 380°C, the pressure is 5 Newtons, and the duration is 15 seconds.

[0104] Next, a microlens layer 4 is fabricated on the side of the optical gap layer 3 away from the driving backplate 1. Specifically, a negative ultraviolet photoresist is spin-coated onto the surface of the optical gap layer 3 away from the driving backplate 1 at 1500 rpm for 30 seconds to form a photoresist layer with a thickness of 15.0 ± 0.2 micrometers. Then, it is soft-baked on a hot plate at 90°C for 120 seconds to remove the solvent from the photoresist layer. Using a nanoimprint emulation device, specifically an EVG 520, the pre-fabricated silicon mold is pressed onto the surface of the photoresist layer at a pressure of 0.8 MPa. After holding the pressure for 180 seconds, a 365 nm ultraviolet lamp (energy density of 350 mJ / cm²) is used. 2 The process involves irradiation and curing. Specifically, the silicon mold surface is etched with an array of pits, each corresponding to a sub-pixel 21. The pits are positioned at the center of each sub-pixel 21. Each pit has a diameter of 4 micrometers, a radius of curvature of 3.2 micrometers, and an aspect ratio of 0.45. After demolding, a microlens 41 is formed on the surface of the optical gap layer 3 using reactive ion etching (RIE). Specifically, the etching gas is a CF4 / O2 mixture, and the microlens 41 is spherical in shape.

[0105] In some embodiments, the display panel 100 further includes a temperature sensor 5, which is disposed on the driving backplate 1. The temperature sensor 5 is used to detect and collect the temperature value of the display panel 100 in real time, so as to dynamically track the temperature change of the display panel 100. This facilitates real-time correction and compensation of the brightness and color of the display panel 100 based on the temperature value of the display panel 100, which is more conducive to solving the problem of uneven brightness and color drift that occurs in the Micro LED display panel 100 after mass transfer, and avoids the appearance of mura on the display panel 100, thereby improving the display effect of the display panel 100. In one specific embodiment, the temperature sensor 5 is a four-channel temperature sensor 5. The four-channel temperature sensor 5 can simultaneously measure the temperature at four different locations, and the arithmetic average of the multiple temperature values ​​collected by the four-channel temperature sensor 5 can be taken as the temperature value of the display panel 100.

[0106] See Figure 4 , Figure 4 This is a schematic diagram of an embodiment of the display device provided in the second embodiment of this application.

[0107] See Figure 4 The second embodiment of this application provides a display device 300. Specifically, the display device 300 includes a display panel 100 and a control circuit 200. The display panel 100 can be any of the display panels 100 described above. The control circuit 200 is electrically connected to the display panel 100 and is used to control the display panel 100 to realize the light-emitting function and to compensate for the brightness and color of the display panel 100.

[0108] Specifically, the control circuit 200 includes a data acquisition module 201, a data processing module 202, and a driving module 203. The data acquisition module 201 is used to acquire in real time the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 of the display panel 100. Here, λ is the wavelength of the sub-pixel 21, which is in the range of 380 nanometers to 780 nanometers, and (x, y) are the spatial coordinates of the sub-pixel 21.

[0109] In some embodiments, the data processing module 202 includes a multi-dimensional compensation amount generation module 2021. The multi-dimensional compensation amount generation module 2021 is used to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel 21 based on the acquired spectral power distribution S(λ, x, y) and radiance value L(x, y), and to calculate the luminance compensation current component and chromaticity compensation current component respectively, generating a compensation current to compensate for the luminance and chromaticity of the display panel 100, thereby solving the problems of uneven brightness and chromaticity drift in the display panel 100.

[0110] In some embodiments, the display panel 100 includes a temperature sensor 5, which is a four-channel temperature sensor 5. This sensor can read multiple temperature values ​​collected by the four channels and take the arithmetic average as the temperature value of the display panel 100. The data processing module 202 also includes a temperature drift correction module 2022. The temperature drift correction module 2022 is used to calculate a correction compensation current based on the acquired temperature value of the display panel 100 and the calculated brightness compensation current component and chromaticity compensation current component. This allows for real-time correction of the compensation current of the display panel 100 according to temperature changes, reducing the impact of temperature changes on the brightness and chromaticity of the display panel 100.

[0111] Specifically, after the data acquisition module 201 acquires the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 of the display panel 100, the spectral power distribution S(λ, x, y) and radiance value L(x, y) are quantized by a 12-bit analog-to-digital converter and transmitted to the data processing module 202. The data processing module 202 first performs numerical integration on the spectral power distribution S(λ, x, y) data of the sub-pixels 21, and performs convolution operation according to the CIE 1931 standard chromaticity observer function to calculate the tristimulus values ​​of the CIEXYZ system. Specifically, the formula for calculating the tristimulus values ​​is as follows:

[0112] ;

[0113] ;

[0114] .

[0115] in, This is the main wavelength offset. =5nm.

[0116] Next, the data processing module 202 calculates the CIE 1976 Uniform Chromaticity Scale (UCS) color coordinates of sub-pixel 21 based on the calculated tristimulus values. Specifically, the formula for calculating the CIE 1976 Uniform Chromaticity Scale color coordinates is as follows:

[0117] ;

[0118] .

[0119] After calculating the CIE 1976 uniform chromaticity scale color coordinates of sub-pixel 21, the data processing module 202 calculates the luminance compensation current component and the chromaticity compensation current component respectively, and calculates the correction compensation current based on the acquired temperature value of the display panel 100 and the calculated luminance compensation current components and chromaticity compensation current components. Specifically, the calculation formula for the luminance compensation current component is as follows:

[0120] .

[0121] Where γ is the gamma coefficient, and in some implementations, γ = 2.2, L target L is the target brightness value. target =1000 nits; L max For the maximum brightness of the display panel 100, L max =1200 nits; K1 is the gain coefficient, which was determined to be K1=0.15 amperes through previous calibration.

[0122] Specifically, the formula for calculating the chromaticity compensation current component is as follows:

[0123] .

[0124] Where K2 = 0.08 amperes, ΔE represents the dominant wavelength of the pixel. The Euclidean distance between the current color coordinates and the target value, specifically:

[0125] ;

[0126] The reference color coordinates are ( , (), , The value of ) is (0.198, 0.468).

[0127] In terms of color compensation, the physiological characteristics of human vision are innovatively incorporated. Physiological optical weighting is performed using the CIE 1931 photopic vision spectral luminous efficiency function V(λ), where the weighting function is defined as:

[0128] .

[0129] Wherein, the value of V(λ) follows the CIE standard; As a color difference sensitivity adjustment factor, when λ > 570 nm (red light band), =1.3; when λ < 500 nm (blue light band), =1.0; when 500 nm ≤ λ ≤ 570 nm (green light band). =1.1. It is understandable that by embedding the CIE 1931 photopic spectral luminous efficiency function V(λ), physiological optical-level compensation can be achieved, which can solve the problem of uneven human eye perception that still exists after compensation.

[0130] In some implementations, based on the obtained temperature value of the display panel 100 and the calculated brightness compensation current component and chromaticity compensation current component, the calculation formula for the compensation current is modified as follows:

[0131] .

[0132] Among them, T ref For reference temperature, T ref =25℃; T is the temperature value of the acquired display panel 100, I default For the default drive current, I default =10 milliamps; The efficiency temperature coefficient of sub-pixel 21. =-0.003 / Kelvin. The temperature value of the display panel 100 is collected by the temperature sensor 5. The data processing module 202 can dynamically correct the output compensation current based on the temperature change of the display panel 100. Even if the temperature of the display panel 100 fluctuates, it will not affect the brightness and color compensation of the display panel 100, thus making it more conducive to solving the problem of uneven brightness and color of the display panel 100.

[0133] In some embodiments, the driving module 203 includes a digital-to-analog converter 2031, a pulse width modulation controller 2032, and a switching transistor 2033. The digital-to-analog converter 2031 converts the digital signal of the compensation current into an analog voltage signal and inputs it to the pulse width modulation controller 2032. The pulse width modulation controller 2032 converts the analog voltage signal into a pulse signal. The pulse signal controls the on / off state of the switching transistor 2033. Specifically, the pulse signal can control the degree to which the switching transistor 2033 is turned on, thereby controlling the magnitude of the output compensation current, facilitating the regulation of the pixel current of the sub-pixel 21 to output the first frame of the display image. The switching transistor 2033 can be a MOSFET.

[0134] In some embodiments, the driving module 203 further includes a level shifter 2034, which is used to receive the pulse signal generated by the pulse width modulation controller 2032, convert the level of the pulse signal, and output the converted pulse signal to the switching transistor 2033.

[0135] Specifically, the drive module 203 adopts a hybrid control mode of pulse width modulation (PWM) and amplitude modulation (AM). The compensation current calculated by the data processing module 202 is a digital signal, which is converted into an analog voltage signal by a 16-bit digital-to-analog converter 2031. The analog voltage signal is input to the pulse width modulation (PWM) controller, and the PWM controller 2032 converts the analog voltage signal of the compensation current into a pulse signal with an adjustable duty cycle. Specifically, the duty cycle (δ) of the pulse signal is:

[0136] .

[0137] Among them, I max For the maximum allowable current, I max =20 mA; the frequency of the pulse signal is set to 4 kHz. The pulse signal output by the pulse width modulation controller 2032 is converted by the level shifter 2034 and then output to the switching transistor 2033 to drive the switching transistor 2033 to complete the regulation of the pixel current.

[0138] The display device 300 provided in this application embodiment can perform real-time compensation for the color and brightness of the display panel 100. The display device 300 greatly reduces pixel aperture ratio loss by combining in-situ optical sensing with visual optimization algorithms, and completes pixel-level correction in milliseconds. It supports uniform display of the first frame after power-on, significantly improves display uniformity and reduces production costs, and solves problems such as uneven brightness and color and patchiness of the display panel 100 in related technologies.

[0139] See Figures 5 to 7 , Figure 5 This is a flowchart illustrating an embodiment of the display panel control method provided in the third embodiment of this application. Figure 6 yes Figure 5 A flowchart illustrating step S1 of the provided display panel control method. Figure 7 yes Figure 5 A flowchart illustrating step S2 of the provided control method for the display panel.

[0140] See Figure 5 The third embodiment of this application provides a control method for a display panel 100. Specifically, the control method for the display panel 100 includes:

[0141] S1: During the first time period, optical scanning is performed on multiple sub-pixels 21 of the display panel 100 to obtain the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels 21 in real time, and the temperature value of the display panel 100 is obtained in real time.

[0142] Specifically, during the first time period, an optical scan is performed on multiple sub-pixels 21 of the display panel 100 to obtain the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels 21 in real time. The first time period is from 0 milliseconds to 20 milliseconds, λ is the wavelength of the sub-pixel 21, which is in the range of 380 nanometers to 780 nanometers, and (x, y) is the spatial coordinate of the sub-pixel 21.

[0143] Simultaneously, during this time period, the temperature value of the display panel 100 detected by the temperature sensor 5 is acquired in real time. In one specific embodiment, the temperature sensor 5 is a four-channel temperature sensor 5, which can collect multiple temperature values. The arithmetic average of the multiple temperature values ​​collected by the four-channel temperature sensor 5 can be taken as the temperature value of the display panel 100. That is, the first time period is the optical scanning stage, and the multiple sub-pixels 21 of the display panel 100 are optically scanned immediately after the display panel 100 is powered on.

[0144] In some implementations, during the first time period, the data can be preprocessed based on the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the acquired multiple sub-pixels 21 to complete the calculation of the tristimulus values ​​of the CIE XYZ system and the conversion of the 1976 uniform chromaticity scale (UCS) color coordinates, thereby obtaining the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel 21.

[0145] Specifically, in some embodiments, the first time period includes adjacent first sub-time periods and second sub-time periods. Step S1, which involves optically scanning multiple sub-pixels 21 of the display panel 100 within the first time period to obtain the spectral power distribution S(λ, x, y) and radiance value L(x, y) of the multiple sub-pixels 21 in real time, and to obtain the temperature value of the display panel 100 in real time, includes:

[0146] S11: During the first sub-time period, capture the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 of the display panel 100 at a preset rate.

[0147] Specifically, within a first sub-time period, the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 of the display panel 100 are captured at a preset rate. The first sub-time period is from 0 milliseconds to 18 milliseconds, and the preset rate is in the range of 950 frames per second to 1050 frames per second. In one specific embodiment, the preset rate is 1000 frames per second.

[0148] S12: During the second sub-time period, the temperature value of the display panel 100 is acquired in real time.

[0149] Specifically, during the second sub-time period, the temperature value of the display panel 100 collected by the temperature sensor 5 is acquired in real time. The second sub-time period is from 19 milliseconds to 20 milliseconds. The temperature value of the display panel 100 is read 2 milliseconds before the end of the optical scanning phase. The acquisition of the spectral power distribution S(λ, x, y) and radiance value L(x, y) of multiple sub-pixels 21 is performed in a time-division manner with the acquisition of the temperature value of the display panel 100, which can reduce energy consumption.

[0150] S2: During the second time period, based on the acquired spectral power distribution S(λ, x, y) and radiance value L(x, y), the luminance compensation current component and chromaticity compensation current component are calculated in parallel, and the correction compensation current is calculated based on the acquired temperature value of the display panel 100.

[0151] Specifically, during the second time period, based on the spectral power distribution S(λ, x, y) and radiance value L(x, y) obtained in step S1, the luminance compensation current component and chromaticity compensation current component are calculated in parallel, and the correction compensation current is calculated based on the temperature value of the display panel 100 obtained in step S1. The second time period is from 21 milliseconds to 50 milliseconds.

[0152] Specifically, the calculation methods for the brightness compensation current component and the chromaticity compensation current component, as well as the method for calculating the correction compensation current based on the obtained temperature value of the display panel 100, are the same as those in the second embodiment of this application. Please refer to the relevant description in the second embodiment above, and they will not be repeated here.

[0153] In some implementations, the second time period includes an adjacent third and fourth sub-time periods. Step S2, which describes calculating the luminance compensation current component and chromaticity compensation current component in parallel based on the acquired spectral power distribution S(λ, x, y) and radiance value L(x, y) within the second time period, and calculating the correction compensation current based on the acquired temperature value of the display panel 100, includes:

[0154] S21: During the third sub-time period, based on the obtained spectral power distribution S(λ, x, y) and radiance value L(x, y), the luminance compensation current component and chromaticity compensation current component are calculated in parallel.

[0155] Specifically, within the third sub-time period, based on the acquired spectral power distribution S(λ, x, y) and radiance value L(x, y), the luminance compensation current component and chromaticity compensation current component are calculated in parallel. The third sub-time period is from 21 milliseconds to 45 milliseconds. The specific calculation methods for the luminance compensation current component and chromaticity compensation current component are described in the relevant description in the second embodiment above, and will not be repeated here.

[0156] S22: During the fourth sub-time period, calculate the correction compensation current based on the obtained temperature value of the display panel 100, as well as the brightness compensation current component and the chromaticity compensation current component.

[0157] Specifically, during the fourth sub-time period, based on the acquired temperature value of the display panel 100 and the brightness compensation current component and chromaticity compensation current component calculated in step S21, a correction compensation current is synthesized and calculated to reduce the impact of temperature changes on the brightness and chromaticity of the display panel 100. The compensation current after temperature drift correction is the final output compensation current. The calculation method of the correction compensation current can be referred to the relevant description in the second embodiment, and will not be repeated here.

[0158] By performing the calculation of the luminance compensation current component and the chromaticity compensation current component in a time-sharing manner with the calculation of the temperature drift correction compensation current, the amount of computation and energy consumption can be reduced.

[0159] S3: During the third time period, acquire the data of the compensation current, convert the digital signal of the compensation current into a pulse signal, control the on / off state of the switching transistor 2033, regulate the pixel current of multiple sub-pixels 21, and output the first frame of the display screen.

[0160] Specifically, during the third time period, the data of the compensation current calculated in step S2 is acquired, and the digital signal of the compensation current is PWM modulated to convert it into a pulse signal with an adjustable duty cycle. Specifically, the third time period is from 51 milliseconds to 100 milliseconds. The method for setting the duty cycle of the pulse signal can be referred to the relevant description in the second embodiment, and will not be repeated here. The pulse signal controls the on / off state of the switching transistor 2033 to regulate the pixel current of multiple sub-pixels 21 and output the first frame of the display image. In some embodiments, the level of the pulse signal can also be converted before being output to the switching transistor 2033 to drive the switching transistor 2033 to complete the regulation of the pixel current, thereby completing the compensation of the brightness and chromaticity of the sub-pixels 21.

[0161] The control method of the display panel 100 provided in this application embodiment can achieve a time of less than or equal to 100 milliseconds from detection to compensation completion, support uniform display of the first frame of the screen upon power-on, and is more conducive to solving the problem of uneven brightness and color of the display panel 100.

[0162] In some embodiments, the control method for the display panel 100 further includes:

[0163] After the first frame of the display is output, the pixel current of the sub-pixel 21 whose refresh rate change of the display panel 100 exceeds the preset threshold is recalibrated within each preset time period.

[0164] Specifically, the pixel current of sub-pixels 21 of the display panel 100 is continuously optimized, and incremental recalibration is performed in the background within each preset time period. Specifically, after outputting the first frame of the display, within each preset time period, the pixel current of sub-pixels 21 whose refresh rate change of the display panel 100 exceeds a preset threshold is recalibrated. The preset time period is between 50 and 70 seconds, and the preset threshold is between 1.5% and 2.5%.

[0165] In one specific embodiment, the preset time period is 60 seconds and the preset threshold is 2%. That is, within every 60 seconds, an incremental recalibration is performed on sub-pixels 21 with a refresh change greater than 2% to continuously optimize the pixel current of multiple sub-pixels 21 of the display panel 100, thereby continuously compensating for the brightness and color of the display panel 100, improving the display uniformity of the display panel 100, and more effectively solving the problem of uneven brightness and color of the display panel 100.

[0166] To verify the performance of the display provided in this application, the inventors conducted a systematic test on five prototypes under relatively controlled experimental conditions. Specifically, the experimental conditions were: a controlled environment with a temperature of 25℃±0.5℃ and a relative humidity of 60%±5%, and a Konica Minolta CA-410 imaging colorimeter was used to conduct a systematic test on the five prototypes. The testing strictly adhered to international display metrology standards: Brightness uniformity testing followed ANSI / NAPM IT7.228-1997, measuring the brightness values ​​of 81 evenly distributed points on the screen when displaying a pure white field (D65 white point), and calculating the percentage ratio of minimum brightness to average brightness; chromaticity uniformity testing followed IEC 62341-7, measuring the CIE 1976 uniform chromaticity scale color coordinates at 81 points, and calculating the maximum color difference; response time testing used a high-speed digital storage oscilloscope (Tektronix DPO7104) to capture the time interval from system power-on to the first stable frame, with the rising edge of the power switch as the trigger signal; temperature adaptability testing followed MIL-STD-810H Method 503.6, conducted in a temperature cycling chamber ranging from -20℃ to 85℃, with brightness fluctuations measured after holding at 10℃ for 30 minutes at each interval.

[0167] The actual test data clearly shows that: in the brightness uniformity test, the average value of the five samples reached 98.7%, which is better than the industry-recognized excellent threshold of 95%, and the worst sample's brightness uniformity data was 97.3%; in terms of color uniformity, the maximum color difference of the whole screen was 0.0023, which is far lower than the industry's stringent requirement of 0.005. Especially in the red display state (CIE x=0.680, y=0.320), the edge color shift phenomenon commonly seen in traditional solutions has completely disappeared; in the response time test, the average time from power-on to output of the first compensated image was 89 milliseconds, with a standard deviation of ±5 milliseconds, meeting the design target of less than or equal to 100 milliseconds; the temperature adaptability test shows that in the extreme environment of -20℃ to 85℃, the brightness fluctuation amplitude was only 1.2%, and the color temperature offset ΔCCT < 50K, which is significantly better than the brightness fluctuation level of >5% of the existing technology; the power consumption test shows that the average power consumption increased by the compensation system when working is 53 milliwatts (at an input voltage of 5 volts), which is less than 3% of the total power consumption of the display panel 100. These data fully verify the comprehensive breakthroughs of the display panel 100 provided in this application in terms of optical performance, environmental adaptability and energy efficiency.

[0168] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A display panel, characterized by, The display panel comprises: a driving backboard; a light-emitting and spectrum-perception integrated layer arranged on one side of the driving backboard, comprising a plurality of sub-pixels and a plurality of spectrum sensors, the plurality of spectrum sensors being arranged one-to-one with the plurality of sub-pixels; the sub-pixel is a micro light-emitting diode; each sub-pixel is provided with a groove away from the surface of the driving backboard, the depth of the groove is less than the thickness of the sub-pixel; the spectrum sensor is arranged in the groove, and the spectrum sensor is a gallium nitride-based micro spectrum sensor; an optical gap layer arranged on the surface of the light-emitting and spectrum-perception integrated layer away from the driving backboard; the optical gap layer is a light-transmitting layer; a microlens layer arranged on the side of the optical gap layer away from the driving backboard, comprising a plurality of microlenses, the plurality of microlenses being arranged one-to-one with the plurality of sub-pixels.

2. The display panel according to claim 1, wherein: the sub-pixel comprises a first n-type gallium nitride layer, an InGaN / GaN quantum well layer and a first p-type gallium nitride layer arranged in sequence; the spectrum sensor comprises a light-absorbing layer and an electrode contact layer, the electrode contact layer comprises a second n-type gallium nitride layer and a second p-type gallium nitride layer arranged at intervals, the light-absorbing layer is located between the second n-type gallium nitride layer and the second p-type gallium nitride layer, and the light-absorbing layer is an InGaN / GaN multi-quantum well structure; the groove is arranged close to the edge of the sub-pixel.

3. The display panel according to claim 2, wherein: the area of the spectrum sensor accounts for 0.5%-4.5% of the area of the sub-pixel.

4. The display panel of claim 1, wherein, the ratio between the diameter of the microlens and the diameter of the sub-pixel is greater than or equal to 0.1 and less than or equal to 0.3; the microlens is arranged corresponding to the center position of the sub-pixel; and / or, the refractive index of the microlens is n, n = 1.53 ± 0.02; and / or, the light transmittance of the microlens is greater than 99%; and / or, the material of the microlens is ultraviolet curing resin; and / or, the material of the optical gap layer is silicon nitride; and / or, the thickness of the optical gap layer is 4.9 microns to 5.1 microns; and / or, the roughness of the surface of the optical gap layer away from the driving backboard is less than 0.5 nanometers.

5. A display device, characterized by comprising: The display panel comprises a control circuit and a display panel according to any one of claims 1-4; wherein the control circuit comprises: a data acquisition module for acquiring the spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y) of a plurality of sub-pixels in real time; wherein λ is the wavelength of the sub-pixel, λ is in the range of 380 nanometers to 780 nanometers, and (x, y) is the spatial coordinate of the sub-pixel; a data processing module comprising a multi-dimensional compensation amount generation module; the multi-dimensional compensation amount generation module is used to calculate the CIE 1976 uniform chromaticity scale color coordinates of the sub-pixel according to the spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y), and to calculate the luminance compensation current component and the chrominance compensation current component respectively, and to generate a compensation current. The driving module comprises a digital-to-analog converter, a pulse width modulation controller and a switching transistor; the digital-to-analog converter is used for converting a digital signal of the compensation current into an analog voltage signal and inputting the analog voltage signal into the pulse width modulation controller; the pulse width modulation controller is used for converting the analog voltage signal into a pulse signal; the pulse signal is used for controlling on-off states of the switching transistor, regulating pixel currents of the sub-pixels, and outputting a first frame of display picture.

6. The display device according to claim 5, wherein The display panel further comprises a temperature sensor disposed on the driving back plate and used for collecting a temperature value of the display panel; the temperature sensor is a four-channel temperature sensor. The data processing module further comprises a temperature drift correction module; the temperature drift correction module is used for calculating a corrected compensation current according to the collected temperature value of the display panel and the luminance compensation current component and the chrominance compensation current component. The driving module further comprises a level shifter used for receiving the pulse signal, converting a level of the pulse signal, and outputting the pulse signal to the switching transistor.

7. A control method of a display panel, applied to the display panel according to any one of claims 1-4; characterized in that, Comprise: In a first time period, a plurality of the sub-pixels of the display panel are optically scanned, the spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y) of a plurality of the sub-pixels are acquired in real time, and the temperature value of the display panel is acquired in real time; wherein the first time period is 0 milliseconds to 20 milliseconds; λ is the wavelength of the sub-pixel, λ is in the range of 380 nanometers to 780 nanometers; (x, y) is the spatial coordinate of the sub-pixel; In a second time period, a luminance compensation current component and a chrominance compensation current component are calculated in parallel according to the acquired spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y), and a corrected compensation current is calculated according to the acquired temperature value of the display panel; wherein the second time period is 21 milliseconds to 50 milliseconds; In a third time period, the data of the compensation current is acquired, the digital signal of the compensation current is converted into a pulse signal, the on-off state of the switching transistor is controlled, the pixel current of a plurality of the sub-pixels is regulated, and a first frame of display picture is output; wherein the third time period is 51 milliseconds to 100 milliseconds.

8. The control method of the display panel according to claim 7, wherein Further comprise: After the first frame of display picture is output, the pixel current of the sub-pixel of the display panel whose refresh changes are greater than a preset threshold value is re-calibrated in each preset time period; wherein the preset time period is in the range of 50 seconds to 70 seconds, and the preset threshold value is in the range of 1.5% to 2.5%.

9. The method of controlling a display panel according to claim 7, wherein, The first time period comprises adjacent first and second sub-time periods; The step of, in the first time period, optically scanning a plurality of the sub-pixels of the display panel, acquiring the spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y) of a plurality of the sub-pixels in real time, and acquiring the temperature value of the display panel in real time, comprises: In the first sub-time period, the spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y) of the plurality of sub-pixels of the display panel are captured at a preset rate; wherein the preset rate is in the range of 950 frames per second to 1050 frames per second; the first sub-time period is 0 milliseconds to 18 milliseconds; In the second sub-time period, the temperature value of the display panel is acquired in real time; wherein the second sub-time period is 19 milliseconds to 20 milliseconds; And / or, the second time period includes adjacent third and fourth sub-time periods; The step of calculating the luminance compensation current component and the chrominance compensation current component in parallel according to the acquired spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y) and calculating the modified compensation current according to the acquired temperature value of the display panel in the second time period includes: In the third sub-time period, the luminance compensation current component and the chrominance compensation current component are calculated in parallel according to the acquired spectral power distribution S(λ, x, y) and the radiation luminance value L(x, y); wherein the third sub-time period is 21 milliseconds to 45 milliseconds; In the fourth sub-time period, the modified compensation current is calculated according to the acquired temperature value of the display panel, the luminance compensation current component and the chrominance compensation current component; wherein the fourth sub-time period is 46 milliseconds to 50 milliseconds.

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