Display device

Abstract

A display device according to an embodiment of the present specification may include a substrate including a display area in which a plurality of pixels and a camera hole may be provided, each of the plurality of pixels may include a plurality of transistors, and a first non-display area surrounding the display area, the second non-display area may be disposed between the display area and the camera hole, the second non-display area may include a plurality of pattern portions and a crack detection pattern portion, the crack detection pattern portion may include a crack detection electrode and a crack detection line surrounding the camera hole, and the crack detection electrode and the crack detection line may be electrically connected to the crack detection signal line. The second non-display area may further include at least a first crack detection pattern portion and a second crack detection pattern portion, and the first crack detection pattern portion and the second crack detection pattern portion may each include a crack detection electrode and a crack detection line. The lengths of the crack detection electrodes of the first crack detection pattern portion and the second crack detection pattern portion may be different.

Description

Technical Field

[0001] The present specification relates to a device, and particularly to, for example but not limited to, a display device capable of reducing or preventing cracks caused by forming a camera hole of the display device in which a camera hole area is formed in a display area and detecting the cracks. Background Art

[0002] Modern display devices that can display a variety of information and interact with users viewing the corresponding information are required to have various sizes, shapes, and functions.

[0003] Examples of the display device include a liquid crystal display device (LCD), a field emission display device (FED), an organic light emitting diode (OLED) display device, and the like.

[0004] OLEDs are self-luminous display devices that, unlike LCDs, do not require a separate light source, making them lightweight and thin. OLEDs are also advantageous in terms of power consumption due to their low-voltage operation. They also offer excellent color expression, response speed, viewing angle, and contrast ratio (CR), and are therefore being studied as next-generation displays.

[0005] OLEDs use multiple thin-film transistors (or "TFTs") to control the current flowing in organic light-emitting diodes to display images.

[0006] Display devices are developed by adding cameras, speakers, and sensors.

[0007] In particular, in order to increase or maximize a display area of ​​a display device, a hole structure in a display in which a hole is formed in a device so that a sensor such as a camera is provided in the display area is applied.

[0008] The descriptions provided in the discussion of the background section should not be considered as prior art merely because they are mentioned in or related to this section. The discussion of the background section may include information describing one or more aspects of the subject technology, and the descriptions in this section do not limit the present invention. Summary of the Invention

[0009] There is a limitation in that, in the process of forming a hole in a display device, cracks occur in a layer near the hole.

[0010] One embodiment of the present specification is directed to providing a display device including a substrate having a through-hole in a display area.

[0011] One embodiment of the present specification also aims to provide a display device capable of reducing or preventing cracks when a through hole or a rounded shape (curvature) is implemented on a substrate.

[0012] One embodiment of the present specification also aims to provide a display device capable of detecting cracks caused by external impact in an area near a through hole, which are caused by a process of realizing a through hole or a circular shape (curvature), and the through hole is formed in a substrate.

[0013] The benefits of the present specification are not limited to the above-mentioned benefits, and other benefits that are not mentioned can be clearly understood by those skilled in the art from the following description.

[0014] A display device according to an embodiment of the present specification may include: a substrate including a display area and a first non-display area surrounding the display area; a plurality of pixels and a camera hole, which may be arranged in the display area; a plurality of transistors, which may be included in each of the plurality of pixels; a second non-display area, which may be arranged between the display area and the camera hole, the second non-display area may include a plurality of pattern portions and a crack detection pattern portion, the crack detection pattern portion may include a crack detection electrode and a crack detection line surrounding the camera hole, and the crack detection electrode and the crack detection line may be electrically connected to a crack detection signal line.

[0015] A display device according to an embodiment of the present specification may include: a display area on a substrate and a first non-display area surrounding the display area; a plurality of pixels and a camera hole, which may be arranged in the display area; a second non-display area, which may be arranged between the display area and the camera hole, the second non-display area may include at least a first crack detection pattern portion and a second crack detection pattern portion, the first crack detection pattern portion and the second crack detection pattern portion may each include a crack detection electrode and a crack detection line, and the lengths of the crack detection electrodes of the first crack detection pattern portion and the second crack detection pattern portion may be different.

[0016] According to the display device of the embodiment of this specification, cracks occurring when forming a through hole for a camera and a sensor provided in a display area or cracks occurring near the through hole due to an external impact can be reduced or prevented.

[0017] According to the display device of the embodiment of the present specification, cracks that may be caused by forming a through hole provided in a display area and cracks that occur near the through hole due to external impact can be detected.

[0018] Effects of the present specification are not limited to the above-described effects, and other effects that are not described can be clearly understood by those skilled in the art from the following description.

[0019] Since the contents of the present disclosure described in the above-mentioned problems to be solved, the means for solving the limitations, and the effects do not specify essential features of the claims, the scope of the claims is not limited by the items described in the contents of the specification.

[0020] Other systems, methods, features, and advantages will be or will become apparent to one skilled in the art upon examination of the following figures and detailed description. It is intended that all such additional systems, methods, features, and advantages be included within this specification, be within the scope of this disclosure, and be protected by the following claims. Nothing in this section should be construed as limiting those claims. Further aspects and advantages are discussed below in conjunction with the embodiments of the present disclosure.

[0021] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this application. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0023] Figure 1 is a plan view illustrating a display device according to one embodiment of the present specification.

[0024] Figure 2 This is a diagram showing an embodiment of the present specification. Figure 1 A cross-sectional view of an example of a cross section taken along line 2-2'.

[0025] Figure 3 According to the embodiment of this specification Figure 1 An enlarged plan view of area P in FIG.

[0026] Figure 4 The embodiment of the present invention is shown in FIG. Figure 1 Schematic diagram of the configuration of wiring in region PH.

[0027] Figure 5 is shown as along Figure 4 A cross-sectional view of one embodiment of the present specification is a cross-sectional view taken along line 5 - 5 ′.

[0028] Figure 6 is shown as Figure 4 A cross-sectional view of another embodiment of the present specification, taken along line 5-6'.

[0029] Throughout the drawings and detailed description, unless otherwise described, the same drawing reference numerals should be understood to refer to the same elements, features, and structures. The relative size and depiction of these elements may be exaggerated for clarity, illustration, and convenience. DETAILED DESCRIPTION

[0030] The advantages and features of the present specification and the methods for achieving them will become clear with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present specification is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to make the disclosure of this specification complete and fully inform those skilled in the art of the present specification of the scope of this specification, and the present specification is limited only by the scope of the appended claims.

[0031] Since the shapes, sizes, ratios, angles, quantities, etc. disclosed in the accompanying drawings for describing the embodiments of this specification are illustrative, this specification is not limited to the illustrated items. Throughout the specification, the same reference numerals represent the same components. In addition, when describing this specification, when it is determined that the detailed description of the relevant known technology may unnecessarily obscure the gist of this specification, its detailed description will be omitted or may be briefly provided. When using "including", "having", "consisting of..." etc. described in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, unless otherwise explicitly stated, it includes the case where the component is provided as a plurality of components.

[0032] Any implementation described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations.

[0033] When constructing a component, the component is interpreted as including an error range even when there is no separate explicit description about the error tolerance.

[0034] When describing a positional relationship, for example, when using "on", "above", "below", "close to", etc. to describe the positional relationship between two parts, one or more other parts may be located between the two parts, unless "immediately" or "directly" is used.

[0035] When describing a temporal relationship, when the terms "after", "subsequently", "then", "before", etc. are used to describe the temporal relationship, it may also include non-continuous cases unless the terms "immediately" or "directly" are used.

[0036] Although terms such as first and second are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component described below can be the second component within the technical concept of this specification.

[0037] In the description of components in this specification, terms such as first, second, A, B, (a), and (b) may be used. These terms are used only to distinguish one component from another, and the nature, order, sequence, etc. of the corresponding components are not limited by these terms. When a component is described as being "connected," "coupled," or "accessed" to another component, the component may be directly connected or accessed to the other component, but it is understood that, unless otherwise specified, other components may be "interposed" between components that may be indirectly connected or coupled.

[0038] It is understood that the term "at least one" includes any combination of one or more of the associated components. For example, the term "at least one of a first component, a second component, and a third component" may include not only the first component, the second component, or the third component, but also any combination of two or more of the first component, the second component, and the third component.

[0039] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, for example, and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein. For example, the term "part" or "unit" may apply to, for example, a separate circuit or structure, an integrated circuit, a computational block of a circuit device, or any structure configured to perform the described function as would be understood by one of ordinary skill in the art.

[0040] In this specification, "device" may include display devices such as a liquid crystal module (LCM) and an organic light-emitting display module (OLED module) that include a display panel and a driver for driving the display panel. In addition, the device may also include a complete set of electronic devices or a complete set of equipment (or complete set of equipment) such as a laptop computer, a television, a computer monitor, a vehicle or automotive device, a mobile electronic device such as a smartphone, an electronic tablet, etc., which are complete products or final products including LCM, OLED, etc.

[0041] Therefore, the device in this specification may include a display device such as an LCM or OLED module, as well as a complete set of devices that are application products or end-consumer devices including the LCM or OLED module.

[0042] In addition, in some embodiments, an LCM or OLED module composed of a display panel, a driving unit, etc. may be referred to as a "display device," and an electronic device as a finished product including the LCM or OLED module may be separately referred to as a "setting device." For example, a display device may include an LCD or OLED display panel and a source printed circuit board (PCB) as a control unit for driving the display panel. The set of equipment may also include a set of PCBs as a complete set of control units electrically connected to the source PCB to drive the setting device.

[0043] The display panel used in the embodiments of this specification may be any type of display panel, such as an OLED display panel or an electroluminescent display panel. However, the embodiments are not limited thereto. For example, the display panel may be a display panel that can vibrate and produce sound through a vibration device according to the embodiments of this specification. The display panel used in the display device according to the embodiments of this specification is not limited to the shape or size of the display panel.

[0044] The features of the various embodiments of this specification may be partially or completely coupled or combined, and various technical intercommunications and drives are possible, and the embodiments may be implemented independently of each other or together in an associated relationship.

[0045] Hereinafter, embodiments of the present specification will be described with reference to the following drawings and embodiments. For the convenience of description, the sizes of components shown in the drawings are different from the actual scale and are therefore not limited to the scale shown in the drawings.

[0046] Hereinafter, various embodiments of the present specification will be described in detail with reference to the accompanying drawings.

[0047] Figure 1 is a schematic plan view illustrating one example of a display device according to one embodiment of the present specification.

[0048] The display device 10 may include multiple areas. For example, the display device 10 includes at least one display area AA, which is an area in which a screen image is displayed, and a pixel array PXL is formed within the display area AA. A first non-display area NA, which does not display a screen image, may include a driver circuit portion and a dam portion and may be provided on one side surface of the display area AA. For example, the first non-display area NA may be adjacent to at least one side surface of the display area AA.

[0049] Reference Figure 1 , the first non-display area NA may surround the substantially rectangular display area AA and may be located outside the display area AA. However, it is understood that the shape of the display area AA and the arrangement of the first non-display area NA adjacent to the display area AA are not specifically limited to Figure 1The exemplary display device 10 shown in FIG. The display area AA and the first non-display area NA may have any shape of the display device 10. Examples of these shapes may include pentagons, hexagons, circles, ellipses, etc., and embodiments of the present specification are not limited thereto.

[0050] Each pixel PXL of the display area AA may include sub-pixels, and the sub-pixels may display colors of red (R), green (G), blue (B), and white (W). Furthermore, each of the pixel PXL and sub-pixels may be associated with a pixel circuit including at least one transistor (thin-film transistor (TFT)) fabricated on a substrate of the display device 10. Each pixel circuit may be electrically connected to a gate line and a data line to communicate with at least one driving circuit, such as a gate driver (GIP) and a data driver (D-IC), located in the first non-display area NA of the display device 10.

[0051] At least one driver circuit may use Figure 1 The gate driver (GIP) may be implemented using a plurality of TFTs on a substrate of the display device 10. Non-limiting examples of circuits that may be implemented as TFTs on a substrate may include an inverter circuit, a multiplexer, an electrostatic discharge (ESD) circuit, and the like, and embodiments of the present disclosure are not limited thereto.

[0052] Some driving circuits may be provided as integrated circuit (IC) chips and mounted in the first non-display area NA of the display device 10 using chip-on-glass (COG) or other similar methods. In addition, some driving circuits may be mounted on another substrate and coupled to connection interfaces (pads / bumps, pins) provided in the first non-display area NA using a printed circuit such as a flexible PCB, a COF, a tape carrier package (TCP), or other suitable technologies.

[0053] In the first non-display area NA, crack detection lines for detecting cracks occurring in the second non-display area PH and cracks transmitted from outside the display panel may be provided to surround the outer edge of the display area AA, and crack detection pads may be provided as much as possible in an area in which the FPCB or the driver IC is provided.

[0054] The crack detection pad can apply a predetermined level of power and compare an input value with an output value. The resistance level of the crack detection line can be identified by the difference between the input value and the output value, and based on this, a crack can be detected.

[0055] In the embodiments of this specification, at least two different types of TFTs are used in the TFT substrate for display. The types of TFTs used in some pixel circuits and some driver circuits may vary depending on the requirements of the display.

[0056] For example, a pixel circuit can be implemented using a TFT with an oxide active layer (oxide TFT), and a drive circuit can be implemented using a TFT with a low-temperature polysilicon active layer (LTPS TFT) and a TFT with an oxide active layer. Unlike LTPS TFTs, oxide TFTs do not experience threshold voltage (Vth) fluctuation restrictions between pixels. A uniform threshold voltage (Vth) can be obtained in the pixel circuit array for display. The uniformity restriction of the threshold voltage (Vth) between the TFTs that implement the drive circuit will have a smaller direct impact on the brightness uniformity of the pixels.

[0057] The driving circuit (eg, GIP) may have a gate driving IC embedded inside the display panel to reduce costs due to a reduction in the number of driving ICs and provide a high-speed scan signal to a display area of ​​the display panel.

[0058] Using a driver circuit on a substrate implemented with LTPS TFTs, it is possible to provide signals and data fragments to pixels using a higher clock rate than in a case where all TFTs in a TFT panel are formed as oxide TFTs. Therefore, a display capable of high-speed operation without spots such as mura can be provided. For example, the advantages of oxide TFTs and LTPS TFTs can be combined in the design of a TFT panel, and both oxide TFTs and LTPS TFTs can be used selectively based on their respective advantages.

[0059] The display area AA may include at least one second non-display area PH and include a through-hole H having a circular or oval shape.

[0060] In the second non-display area PH, sensors such as a camera, a distance detection sensor, and a face recognition sensor may be disposed.

[0061] Figure 2 It is shown along Figure 1 Schematic cross-sectional view of an example of a cross section along line 2-2' in FIG.

[0062] Reference Figure 2 , the substrate 100 of the display device according to the embodiment of the present specification may include a first substrate, a second substrate, and an intermediate layer between the first substrate and the second substrate.

[0063] The first substrate and the second substrate may be made of at least one of polyimide, polyethersulfone, polyethylene terephthalate and polycarbonate, and the embodiments of the present specification are not limited thereto. When the substrate is made of a plastic material, the manufacturing process of the display device can be performed in a state where a supporting substrate made of glass is provided below the substrate, and after the manufacturing process of the display device is completed, the supporting substrate can be released. In addition, after the supporting substrate is released, a backplane (or plate) for supporting the substrate can be provided below the substrate. When the substrate is made of a plastic material, moisture may penetrate the substrate and then penetrate the thin film transistor or light emitting element layer, thereby degrading or reducing the performance of the display device.

[0064] The display device according to the embodiment of the present specification may be composed of two substrates, a first substrate and a second substrate made of a plastic material, to reduce or prevent the performance degradation or reduction of the display device due to moisture penetration. In addition, by forming an intermediate layer as an inorganic film between the first substrate and the second substrate, moisture can be blocked from penetrating the substrate, thereby improving the performance reliability of the product. The intermediate layer can be made of an inorganic film. For example, the intermediate layer can be made of silicon nitride (SiN x ) or silicon oxide (SiO x ) is formed as a single layer or multiple layers, but is not limited thereto.

[0065] The display device formed on the substrate 100 may include a plurality of regions. In this specification, the display device is composed of a display area AA and a first non-display area NA, but is not limited thereto.

[0066] Made of silicon nitride (SiN x ) or silicon oxide (SiO x The buffer layer 101 formed of a single layer or multiple layers of a substrate 100 may be provided on one surface of the display area AA and the first non-display area NA on the substrate 100. The buffer layer 101 may increase the adhesive strength between the layers formed on the buffer layer 101 and the substrate 100, and serve to block any type of defect factors such as alkaline components leaking from the substrate 100. In addition, the buffer layer 101 may delay the diffusion of moisture and / or oxygen penetrating the substrate 100.

[0067] The buffer layer 101 may be omitted based on the type and material of the substrate, the structure and type of the thin film transistor, and the like.

[0068] The transistors of the display area AA and the first non-display area NA may be formed on the buffer layer 101. The transistors of the display area AA may include a switching transistor SW Tr and a driving transistor DR Tr for driving sub-pixels, and the transistors of the first non-display area NA may include a first gate drive transistor GT1 and a second gate drive transistor GT2 for driving a gate driver (GIP).

[0069] The light shielding layer 200 may be disposed on the buffer layer 101 to overlap at least a portion of the driving transistor DR Tr.

[0070] The light shielding layer 200 may shield light directed to the first semiconductor layer 210 of the driving transistor DR Tr and be connected to the first drain electrode 230D, thereby reducing or preventing a phenomenon in which parasitic carriers accumulate in the first semiconductor layer 210 to rapidly increase leakage current or a change in threshold voltage due to such a phenomenon.

[0071] The light shielding layer 200 may be formed of a single layer or multiple layers having at least one of titanium (Ti), molybdenum (Mo), copper (Cu), aluminum (Al), silver (Ag), chromium (Cr), gold (Au), neodymium (Nd), and nickel (Ni), and the embodiments of the present specification are not limited thereto.

[0072] The first insulating layer 110 may be provided on the light shielding layer 200. The first insulating layer 110 may be made of, for example, silicon nitride (SiN x ) or silicon oxide (SiO x ) and may also be made of insulating inorganic materials or organic materials, and the embodiments of this specification are not limited thereto.

[0073] The first semiconductor layer 210 of the driving transistor DR Tr of the display area AA and the second semiconductor layer 400 of the first gate driving transistor GT1 of the first non-display area NA may be disposed on the first insulating layer 110 , and the first semiconductor layer 210 may overlap the light blocking layer 200 .

[0074] The first semiconductor layer 210 and the second semiconductor layer 400 may be made of low temperature polysilicon (LTPS).

[0075] The first gate insulating layer 120 may be provided on the first semiconductor layer 210 and the second semiconductor layer 400. The first gate insulating layer 120 may be made of a material such as silicon nitride (SiN x ) or silicon oxide (SiO x ) and may also be made of insulating inorganic materials or organic materials, and the embodiments of this specification are not limited thereto.

[0076] The first gate electrode 220 and the second gate electrode 410 can be disposed on the first gate insulating layer 120 to overlap with the first semiconductor layer 210 and the second semiconductor layer 400, and the first gate electrode 220 and the second gate electrode 410 can be made of at least one material of silver (Ag), molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), tungsten (W) and gold (Au), and the embodiments of the present specification are not limited thereto.

[0077] The first capacitor electrode Cst1 of the capacitor PXL Cst included in the sub-pixel may be formed in the same or substantially the same process as the first and second gate electrodes 220 and 410 .

[0078] The second insulating layer 130 may be disposed on the first gate electrode 220 , the second gate electrode 410 , and the first capacitor electrode Cst1 .

[0079] The second insulating layer 130 may be made of silicon nitride (SiN x ) or silicon oxide (SiO x ) and may also be made of insulating inorganic materials or organic materials, and the embodiments of this specification are not limited thereto.

[0080] The second capacitor electrode Cst2 of the sub-pixel capacitor PXL Cst may be disposed on the second insulating layer 130. The second capacitor electrode Cst2 may be disposed to overlap the first capacitor electrode Cst1 and made of the same or substantially the same material as the first capacitor electrode Cst1.

[0081] A first metal layer 300 overlapping the switching transistor SW Tr of the sub-pixel and a second metal layer 500 overlapping the second gate driving transistor GT2 may be provided by being formed on the second insulating layer 130 .

[0082] The first metal layer 300 and the second metal layer 500 can be driven by the lower gate electrodes of the switching transistor SW Tr and the second gate drive transistor GT2, respectively, or used as a light shielding layer to shield light reflected to the third semiconductor layer 310 of the switching transistor SW Tr and the fourth semiconductor layer 510 of the second gate drive transistor GT2, and the embodiments of the present specification are not limited thereto.

[0083] The third insulating layer 140 may be disposed on the second capacitor electrode Cst2 , the first metal layer 300 , and the second metal layer 500 .

[0084] The third insulating layer 140 may be made of, for example, silicon nitride (SiN x ) or silicon oxide (SiO x ) and may also be made of insulating organic materials, etc., and the embodiments of this specification are not limited thereto.

[0085] The third semiconductor layer 310 of the switching transistor SW Tr of the display area AA and the fourth semiconductor layer 510 of the second gate driving transistor GT2 of the first non-display area NA may be disposed on the third insulating layer 140 .

[0086] The third semiconductor layer 310 and the fourth semiconductor layer 510 may be made of a metal oxide semiconductor, such as one of IGZO, IZO, IGTO, and IGO, but is not limited thereto.

[0087] The metal oxide semiconductor may have improved conductive properties through a doping process of injecting impurities, and includes a channel region in which a channel through which electrons or holes move is formed, and a source region and a drain region as conductive regions on both sides of the channel region. A source electrode and a drain electrode may be connected to the source region and the drain region.

[0088] The second gate insulating layer 150 may be disposed on the third semiconductor layer 310 and the fourth semiconductor layer 510. The second gate insulating layer 150 may be disposed between the third semiconductor layer 310 and the fourth semiconductor layer 510 and between the third gate electrode 320 and the fourth gate electrode 520 to insulate the third semiconductor layer 310 and the fourth semiconductor layer 510 and the third gate electrode 320 and the fourth gate electrode 520.

[0089] The second gate insulating layer 150 may be made of silicon nitride (SiN x ) or silicon oxide (SiO x ) and may also be made of insulating organic materials, but is not limited thereto.

[0090] The third gate electrode 320 and the fourth gate electrode 520 may be disposed on the second gate insulating layer 150 to overlap the third semiconductor layer 310 and the fourth semiconductor layer 510 .

[0091] The third gate electrode 320 and the fourth gate electrode 520 may be formed of a single layer or multiple layers made of one of silver (Ag), molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), tungsten (W), and gold (Au), or alloys thereof, but are not limited thereto.

[0092] A fourth insulating layer 160 may be disposed on the third gate electrode 320 and the fourth gate electrode 520 .

[0093] The fourth insulating layer 160 may be made of silicon nitride (SiN x ) and silicon oxide (SiO x ) or is made of at least one of an organic insulating material such as benzocyclobutene (BCB), acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin, and the embodiments of this specification are not limited thereto.

[0094] On the fourth insulating layer 160, a first source electrode 230S and a first drain electrode 230D connected to the first semiconductor layer 210, a second source electrode 420S and a second drain electrode 420D connected to the second semiconductor layer 400, a third source electrode 330S and a third drain electrode 330D connected to the third semiconductor layer 310, and a fourth source electrode 530S and a fourth drain electrode 530D connected to the fourth semiconductor layer 510 can be arranged.

[0095] The first source electrode 230S, the first drain electrode 230D, the second source electrode 420S and the second drain electrode 420D are connected to the first semiconductor layer 210 and the second semiconductor layer 400 through contact holes formed in the first gate insulating layer 120, the second insulating layer 130, the third insulating layer 140, the second gate insulating layer 150 and the fourth insulating layer 160.

[0096] The third source electrode 330S, the third drain electrode 330D, the fourth source electrode 530S, and the fourth drain electrode 530D are connected to the third semiconductor layer 310 and the fourth semiconductor layer 510 through contact holes formed in the second gate insulating layer 150 and the fourth insulating layer 160 .

[0097] The first source electrode 230S, the first drain electrode 230D, the second source electrode 420S, the second drain electrode 420D, the third source electrode 330S, the third drain electrode 330D, the fourth source electrode 530S and the fourth drain electrode 530D may be formed by the same or substantially the same process and may be made of at least one of silver (Ag), molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), tungsten (W) and gold (Au).

[0098] The first planarization layer 170 may be disposed on the first source electrode 230S, the first drain electrode 230D, the second source electrode 420S, the second drain electrode 420D, the third source electrode 330S, the third drain electrode 330D, the fourth source electrode 530S, and the fourth drain electrode 530D.

[0099] The first planarization layer 170 may be formed of an organic insulating layer such as polyacrylate and polyimide, thereby reducing steps caused by lines and contact holes formed under the first planarization layer.

[0100] A connection electrode 240 for connecting the first drain electrode 230D to the anode electrode 600 may be disposed on the first planarization layer 170 .

[0101] The connection electrode 240 may be electrically connected to the first drain electrode 230D through a hole formed in the first planarization layer 170 .

[0102] The connection electrode 240 may be made of at least one of titanium (Ti), molybdenum (Mo), copper (Cu), aluminum (Al), silver (Ag), chromium (Cr), gold (Au), neodymium (Nd), nickel (Ni), or an alloy thereof, and the embodiments of the present specification are not limited thereto.

[0103] The first line 630 may be disposed in the first non-display area NA by being formed in the same or substantially the same process as the connection electrode 240 .

[0104] The first line 630 may be one of lines for transmitting a voltage applied to the cathode electrode 620 as a low potential voltage in the first non-display area NA.

[0105] The second planarization layer 180 may be disposed on the connection electrode 240 and the first line 630. The second planarization layer 180 may be formed of an organic insulating layer such as polyacrylate and polyimide, and the embodiments of the present specification are not limited thereto.

[0106] The anode electrode 600 may be disposed on the second planarization layer 180. The anode electrode 600 may be electrically connected to the connection electrode 240 through a hole formed in the second planarization layer 180.

[0107] The second line 640 may be formed in the first non-display area NA in the same or substantially the same process as the process of forming the anode electrode 600. The second line 640 may be disposed to overlap with portions of the first gate drive transistor GT1 and the second gate drive transistor GT2 and connected to the first line 630 disposed in the first non-display area NA to apply a low potential voltage to the cathode electrode 620.

[0108] The anode electrode 600 and the second line 640 may be made of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), lead (Pd), indium tin oxide (ITO), indium zinc oxide (IZO), or alloys thereof, and the embodiments of the present specification are not limited thereto.

[0109] The bank 190 may be disposed on the anode electrode 600 , the second line 640 , and the second planarization layer 180 .

[0110] The bank 190 may separate the plurality of sub-pixels SP, thereby reducing or minimizing light spillage and reducing or preventing color mixing at any viewing angle.

[0111] The bank 190 may expose the anode electrode 600 corresponding to the light emitting region and cover an end portion of the anode electrode 600 .

[0112] The bank 190 may be made of silicon nitride (SiN x ) or silicon oxide (SiOx ) or at least one of an inorganic insulating material such as BCB, acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin, but is not limited thereto.

[0113] A spacer 191 may also be provided on the bank 190. The spacer 191 may support the gap between the substrate 100 on which the light-emitting element layer 610 is formed and the upper substrate, thereby reducing or minimizing damage to the elements inside the display panel when an external physical impact occurs. The spacer 191 may be made of the same or substantially the same material as the bank 190 and formed simultaneously with the bank 190, but is not limited thereto.

[0114] The light-emitting element layer 610 may be disposed on the opening of the bank 190 that exposes the anode electrode 600. The light-emitting element layer 610 may include at least one organic light-emitting layer selected from the group consisting of a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a white light-emitting layer to emit light of a specific color. In addition to the organic light-emitting layer, the light-emitting element layer 610 may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, but is not limited thereto.

[0115] A hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer having different thicknesses and materials may be disposed in each sub-pixel or collectively disposed over the entire display area AA.

[0116] When the light emitting element layer 610 is collectively disposed over the entire display area AA, a color filter may be disposed over the light emitting element layer 610 to overlap with the light emitting areas of the sub-pixels to emit light corresponding to each sub-pixel.

[0117] The cathode electrode 620 may be provided on the light emitting element layer 610. The cathode electrode 620 may supply electrons to the light emitting element layer 610, and may be made of a conductive material having a low work function.

[0118] When the display device 10 is a top emission type, a transparent conductive material that transmits light may be used to provide the cathode electrode 620. For example, the cathode electrode 620 may be made of at least one of ITO and IZO, but is not limited thereto.

[0119] In addition, the cathode electrode 620 may be formed using a translucent conductive material that transmits light. For example, the cathode electrode 620 may be made of at least one of alloys such as LiF / Al, CsF / Al, Mg:Ag, Ca / Ag, Ca:Ag, LiF / Mg:Ag, LiF / Ca / Ag, and LiF / Ca:Ag, but is not limited thereto.

[0120] When the display device 10 is a bottom emission type, an opaque conductive material may be used as a reflective electrode that reflects light to provide the cathode electrode 620. For example, the cathode electrode 620 may be made of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof.

[0121] A plurality of driving circuit parts and a dam NADM of a first non-display area are provided in the first non-display area NA of the display device 10 .

[0122] The first non-display area NA may be an area in which a connection portion electrically connecting the cathode electrode 620 to a line through which a voltage is applied to the cathode electrode 620 and the display device 10 are sealed using the dam NADM of the plurality of non-display areas.

[0123] The first insulating layer 110 , the first gate insulating layer 120 , the second insulating layer 130 , and the third insulating layer 140 of the display area AA may be disposed to extend in the first non-display area NA.

[0124] Wires may be provided in the first non-display area NA so that a power voltage and a touch signal applied from the FPCB of the display device 10 are connected to the display panel through the wires.

[0125] The wire may be disposed in contact with side surfaces of the fourth insulating layer 160 and the second gate insulating layer 150 and extend between the first dam DM1 of the first non-display area NA and the third insulating layer 140 .

[0126] The first dam DM1 may be stacked by being made of the same or substantially the same material as the first planarization layer 170 and the bank 190 and formed in the same or substantially the same process.

[0127] The second dam DM2 may be stacked by being made of the same or substantially the same material and formed in the same or substantially the same process as the first planarization layer 170 , the second planarization layer 180 , the bank 190 , and the spacer 191 .

[0128] The first dam DAM1 and the second dam DAM2 may have first and second heights, respectively, and surround the display area AA.

[0129] The second height may be formed to be higher than the first height. Even when the second encapsulation layer 720 exceeds the first dam DM1 of the second dam portion, the second encapsulation layer 720 may not be formed outside the second dam DM2 due to the second dam DM2.

[0130] The first encapsulation layer 710 and the third encapsulation layer 730 may be provided to extend outside beyond the second dam DM2 .

[0131] The second line 640 may be disposed to extend between the first planarization layer 170 and the bank 190 of the first dam DM1 and between the second planarization layer 180 and the bank 190 of the second dam DM2 .

[0132] The cathode electrode 620 may extend to a region between the first dam DM1 and the second dam DM2 and may be electrically connected to the first line 630 and the second line 640 .

[0133] The encapsulation layer 700 may be disposed on the cathode electrode 620 of the display area AA, the cathode electrode 620 of the first non-display area NA, and the second dam DM2.

[0134] The encapsulation layer 700 may protect the display device 10 from external moisture, oxygen, or foreign matter. For example, the encapsulation layer 700 may reduce or prevent oxygen and moisture from penetrating from the outside to reduce or prevent oxidation of the light emitting material and the electrode material.

[0135] The encapsulation layer 700 may be made of a transparent material so that light emitted from the light emitting element layer 610 may be transmitted.

[0136] The encapsulation layer 700 may include a first encapsulation layer 710, a second encapsulation layer 720, and a third encapsulation layer 730 that block moisture or oxygen permeation, and the embodiments of the present specification are not limited thereto. The first encapsulation layer 710, the second encapsulation layer 720, and the third encapsulation layer 730 may have a sequentially stacked structure, and the embodiments of the present specification are not limited thereto.

[0137] The first encapsulation layer 710 and the third encapsulation layer 730 may be made of silicon nitride (SiN x ), silicon oxide (SiO x ) or aluminum oxide (Al y O z ) is made of at least one inorganic material, but is not limited thereto.

[0138] The second encapsulation layer 720 may cover foreign matter or particles that may appear during the manufacturing process. In addition, the second encapsulation layer 720 may planarize the surface of the first encapsulation layer 710.

[0139] The second encapsulation layer 720 may be made of an organic material, such as silicon oxycarbide (SiOCN). z ), polymers such as epoxy resin, polyimide, polyethylene or acrylate, but not limited thereto.

[0140] The touch buffer layer 800 may be disposed on the third encapsulation layer 730. The touch buffer layer 800 may be disposed on the entire surface of the display area AA and the first non-display area NA and disposed to extend to the pad portion. The touch buffer layer 800 may be a first insulating layer and is not limited to this term.

[0141] The touch buffer layer 800 may be made of silicon nitride (SiN x ), silicon oxide (SiO x ) or aluminum oxide (Al y O z ) is made of at least one inorganic material, but is not limited thereto.

[0142] The first touch electrode 810 may be provided on the touch buffer layer 800 .

[0143] The touch operation can be driven by a plurality of detection electrodes and a plurality of driving electrodes arranged in the display area AA. The detection electrodes include a plurality of sub-detection electrodes Rx extending along the first direction and arranged at predetermined intervals along the second direction. The plurality of detection electrodes can be formed continuously without being disconnected in the first direction.

[0144] The plurality of driving electrodes include a plurality of sub driving electrodes Tx extending in the second direction and arranged at predetermined intervals in the first direction. The plurality of sub driving electrodes Tx may be electrically connected in the second direction.

[0145] When the plurality of sub-detecting electrodes Rx and the plurality of sub-driving electrodes Tx are formed on the same layer, the plurality of sub-driving electrodes Tx may be electrically connected by a bridge pattern.

[0146] The plurality of sub-detection electrodes Rx and the plurality of sub-driving electrodes Tx may have a metal mesh structure.

[0147] In addition, the plurality of sub-detection electrodes Rx may be electrically connected by the bridge pattern, and the plurality of sub-driving electrodes Tx may be electrically connected by being continuously formed without being disconnected.

[0148] The first touch electrode 810 may be electrically connected to the plurality of sub-detection electrodes Rx or the plurality of sub-driving electrodes Tx.

[0149] The first touch electrode 810 may have a single-layer or multi-layer structure made of a metal material such as molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), titanium / aluminum / titanium (Ti / Al / Ti), molybdenum / aluminum / molybdenum (Mo / Al / Mo), but is not limited thereto.

[0150] The touch insulating layer 820 may be provided on the first touch electrode 810. The touch insulating layer 820 may be provided on the entire surface of the display area AA and the first non-display area NA and may be provided to extend to the pad portion. The touch insulating layer 820 may be a second insulating layer and is not limited to this term.

[0151] The touch insulating layer 820 may be made of silicon nitride (SiN x ), silicon oxide (SiO x ) or aluminum oxide (Al y Oz ) is made of at least one inorganic material, but is not limited thereto.

[0152] The second touch electrodes 830 may be provided on the touch insulation layer 820. The second touch electrodes 830 may be a plurality of sub-detection electrodes Rx or a plurality of sub-driving electrodes Tx for touch driving.

[0153] In addition, the first touch electrode 810 may be a bridge electrode for electrically connecting the second touch electrodes 830 spaced apart from each other, but is not limited thereto.

[0154] The touch line 840 for transmitting the touch driving signal to the first non-display area NA may be provided in the same or substantially the same process as that of forming the second touch electrode 830 .

[0155] The touch line 840 may overlap the first gate drive transistor GT1 or the second gate drive transistor GT2 and may be disposed to extend to a pad portion.

[0156] The second touch electrode 830 and the touch line 840 may have a single-layer or multi-layer structure made of a metal material such as molybdenum (Mo), silver (Ag), titanium (Ti), copper (Cu), aluminum (Al), titanium / aluminum / titanium (Ti / Al / Ti), molybdenum / aluminum / molybdenum (Mo / Al / Mo), but are not limited thereto.

[0157] The third planarization layer 850 may be disposed on the second touch electrode 830 and the touch wire 840 .

[0158] The third planarization layer 850 may cover and planarize the second touch electrodes 830, the touch wires 840, and the touch insulation layer 820. Furthermore, the third planarization layer 850 may be made of at least one organic insulating material such as BCB, acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, but is not limited thereto.

[0159] An adhesive layer 900 and a cover window 910 may be disposed on the third planarization layer 850 .

[0160] Will refer to Figures 3 to 6 Detailed description Figure 1 The configuration of the second non-display area PH is shown in FIG.

[0161] To arrange the camera and sensor in the display area AA, the second non-display area PH includes a through hole H, a trimming portion TM surrounding the through hole H, a first pattern structure PT1 , a hole dam HDM, a second pattern structure PT2 , and a wiring region RK.

[0162] The through hole H may be located in the central portion of the second non-display area PH and formed to physically pass from the substrate 100 to the third planarization layer 850. A camera, a sensor, and a light source may be disposed below the through hole H, and light may be easily transmitted through the through hole H over the camera or sensor.

[0163] In the wiring region RK, wiring for electrically connecting lines connected to the sub-pixels of the display area AA through the second non-display area PH is provided.

[0164] The first wiring 20 may be made of the same or substantially the same material and in the same or substantially the same process as that of forming the first gate electrode 220, the second gate electrode 410, and the first capacitor electrode Cst1 on the first gate insulating layer 120 disposed to extend to the second non-display region PH, and the embodiments of the present specification are not limited thereto.

[0165] The second wiring 30 may be made of the same or substantially the same material and in the same or substantially the same process as that of forming the second capacitor electrode Cst2 on the second insulating layer 130 disposed to extend to the second non-display area PH, and embodiments of the present specification are not limited thereto.

[0166] The third wiring 31 may be made of the same or substantially the same material and in the same or substantially the same process as that of forming the third gate electrode 320 and the fourth gate electrode 520 on the second gate insulating layer 150 , and the embodiments of the present specification are not limited thereto.

[0167] The fourth wiring 40 may be formed by the same or substantially the same process as the first source electrode 230S, the first drain electrode 230D, the second source electrode 420S, the second drain electrode 420D, the third source electrode 330S, the third drain electrode 330D, the fourth source electrode 530S, and the fourth drain electrode 530D provided on the fourth insulating layer 160 extending to the second non-display area PH, and the embodiments of the present specification are not limited thereto.

[0168] The fifth wiring 50 may be formed by the same or substantially the same process as the connection electrode 240 disposed on the first planarization layer 170 extending to the second non-display region PH, and embodiments of the present specification are not limited thereto.

[0169] The first wiring 20 , the second wiring 30 , the third wiring 31 , the fourth wiring 40 , and the fifth wiring 50 may be electrically connected in the wiring region RK and disposed to at least partially overlap, but are not limited thereto.

[0170] The gate lines of the sub-pixels of the display area AA may be connected to the first wiring 20, the second wiring 30, and the third wiring 31, and may also be electrically connected in the second non-display area PH, and the data lines of the sub-pixels may be connected to the fourth wiring 40 and the fifth wiring 50, and may also be electrically connected in the second non-display area PH.

[0171] In the wiring area RK, a touch line formed with the same or substantially the same material and the same or substantially the same process as the first touch electrode 810 and the second touch electrode 830 can be formed to electrically connect the touch drive signal of the display area AA and send the touch drive signal to other areas of the display area AA through the second non-display area PH.

[0172] The first and second pattern structures PT1 and PT2 are provided to surround the through hole H. The first and second pattern structures PT1 and PT2 may be formed of a lower pattern PTa and an upper pattern PTb. The lower pattern PTa may be simultaneously made of the same or substantially the same material as the fourth insulating layer 160. The upper pattern PTb may be simultaneously made of the same or substantially the same material as the second planarization layer 180. However, the materials and the number of layers of the insulating layers of the first and second pattern structures PT1 and PT2 are not limited thereto.

[0173] In addition, a plurality of first pattern structures PT1 or second pattern structures PT2 may be disposed to be spaced apart from each other by a predetermined distance.

[0174] The first pattern structure PT1 and the second pattern structure PT2 may reduce or prevent moisture from penetrating into the display area AA through the light emitting element layer 610 , which is susceptible to moisture penetration.

[0175] A width of a lower surface of the upper pattern PTb disposed above the lower pattern PTa of the first pattern structure PT1 or the second pattern structure PT2 is greater than a width of an upper surface of the lower pattern PTa.

[0176] The light emitting element layer 610 disposed on the upper and side surfaces of the upper pattern PTb is not formed on the side surface of the lower pattern PTa due to the spacing space between the lower surface of the upper pattern PTb and the side surface of the lower pattern PTa, and thus may be disconnected by the plurality of pattern structures PT.

[0177] The hole dam HDM may be disposed between the first pattern structure PT1 and the second pattern structure PT2 .

[0178] The hole dam HDM may reduce or prevent the second encapsulation layer 720 from overflowing into the through hole H. At least one hole dam HDM may be disposed between the first pattern structure PT1 and the second pattern structure PT2 .

[0179] The hole dam HDM can be formed by stacking a first dam layer DA1, a second dam layer DA2, a third dam layer DA3 and a fourth dam layer DA4 formed by the same or substantially the same materials as the fourth insulating layer 160, the second planarization layer 180, the embankment 190 and the spacer 191 and the same or substantially the same process, and the embodiments of this specification are not limited thereto.

[0180] Due to the hole dam HDM, the second encapsulation layer 720 may be arranged to overlap a portion of the second pattern structure PT2 and the hole dam HDM.

[0181] The third encapsulation layer 730 may be disposed to extend to the wiring region RK, the first pattern structure PT1, the dam DM, and the second pattern structure PT2 of the second non-display region PH, and may abut or contact the first encapsulation layer 710 on the upper surface or side surface of the plurality of patterns PT of the first pattern structure PT1.

[0182] Although not shown, the touch buffer layer 800 and the touch insulation layer 820 may be disposed to extend from the wiring region RK of the second non-display region PH, the first pattern structure PT1 , the hole dam HDM, and the second pattern structure PT2 to the third encapsulation layer 730 .

[0183] Reference Figure 4 , the first wiring 20, the second wiring 30, and the third wiring 31 may be sequentially provided from the through hole H to the display area AA, and a crack detection line capable of detecting cracks may be provided in the area between the through hole H and the wirings 20, 30, and 31. At least one crack detection line may be provided, but the present specification is not limited thereto.

[0184] The through hole H may be formed in the display area AA of the display panel using a laser at a completion stage of the display panel.

[0185] As a laser, a picosecond laser or a femtosecond laser can be used, but this specification is not limited to such. Lasers amplify light generated by applying energy to a specific material and use the directed and emitted light to impart directionality to monochromatic light with properties similar to radio waves for applications in communications, medicine, and industry. Lasers can be used to form patterns in desired areas or easily remove specific areas. Lasers use energy to form or remove patterns, and when the laser energy is radiated onto an object, the heat melts the object, forming the pattern. The longer the laser is radiated, the greater the potential for heat effects to be transferred to areas near the portion where the pattern is formed. This thermal effect can cause heat to accumulate near the laser irradiation area of ​​the object, causing surrounding areas larger than the intended pattern to burn or deform due to the heat. Due to the characteristics of lasers, when the laser irradiation area overlaps or is adjacent to an insulating film, the thermal energy of the laser can also deform the insulating film. This deformation of the insulating film can cause cracks to form, and these cracks can propagate through the insulating film, causing it to peel or allow moisture and oxygen to penetrate.

[0186] In addition, since the second non-display region PH of the display panel in which the through-hole H is formed may be easily subjected to external impact, cracks may occur due to the external impact and may propagate to the display region.

[0187] Therefore, in the display device 10 according to one embodiment of the present specification, at least one crack detection pattern portion CPT may be disposed between the through hole H and the wiring region RK to detect cracks and reduce or prevent the cracks from propagating to the second non-display region PH.

[0188] Figure 5 It is along Figure 4 Cross-sectional view along line 5-5'.

[0189] Figure 5 is a cross-sectional view showing a portion in which the first crack detection signal line 201 is connected to the second crack detection signal line 202 , the third crack detection electrode 32_3 is connected to the third crack detection line 204_3 , and the third crack detection line 204_3 is connected to the first crack detection signal line 201 through the trench hole TH.

[0190] The first crack detection signal line 201 may be provided on the buffer layer 101 to extend from the side of the through hole H to the side of the display area AA. The first crack detection signal line 201 may extend to overlap or intersect with the wiring area RK to transmit a crack detection signal to the first non-display area NA, and may be formed on a different layer from the wiring.

[0191] The first crack detection signal line may be made of the same or substantially the same material and in the same or substantially the same process as the light shielding layer 200 .

[0192] The first crack detection signal line may be electrically connected to the crack detection electrode 32 of the crack detection pattern portion CPT disposed between the first pattern structure PT1 or the second pattern structure PT2 and the crack detection line 204 to detect a crack caused by a resistance change of the crack detection line 204 when a crack occurs.

[0193] At least one crack detection pattern portion CPT may be provided, and the plurality of crack detection electrodes 32 may include first, second, and third crack detection electrodes 32_1, 32_2, and 32_3, and the plurality of crack detection lines 204 may include first, second, and third crack detection lines 204_1, 204_2, and 204_3.

[0194] The first crack detection electrode 32_1 , the second crack detection electrode 32_2 , and the third crack detection electrode 32_3 may have different lengths, the first crack detection electrode 32_1 may be shorter than the second crack detection electrode 32_2 , and the second crack detection electrode 32_2 may be shorter than the third crack detection electrode 32_3 .

[0195] The resistance value transmitted to the first crack detection signal line 201 may vary depending on the length of the crack detection electrode 32 when a crack occurs, thereby identifying the location where the crack occurs and the extent of the crack extension.

[0196] Reference Figure 5 Describing the crack detection pattern portion CPT, the third crack detection electrode 32_3 may be disposed on the second gate insulating layer 150 , the lower pattern PTa may be disposed on the third crack detection electrode 32_3 , and the third crack detection line 204_3 may be disposed on the lower pattern PTa.

[0197] The third crack detection line 204_3 can be connected to the third crack detection electrode 32_3 through a contact hole formed in the lower pattern PTa, and the third crack detection line 204_3 can be connected to the first crack detection signal line 201 through a groove hole TH formed in the lower pattern PTa, the second gate insulation layer 150, the third insulation layer 140, the second insulation layer 130, the first gate insulation layer 120 and the first insulation layer 110 to send a resistance signal according to the detection of the crack.

[0198] The trench hole TH may be formed as a trench-shaped groove in the second gate insulating layer 150 , the third insulating layer 140 , the second insulating layer 130 , the first gate insulating layer 120 , and the first insulating layer 110 made of an inorganic insulating material and may block a propagation direction of a crack when a crack occurs.

[0199] In a plan view, the first crack stopper 21 and the second crack stopper 22 may be disposed to overlap the third crack detection electrode 32_3 below the third crack detection electrode 32_3 .

[0200] The first crack stopper 21 may be disposed on the first gate insulating layer 120 and made of the same or substantially the same material and formed in the same or substantially the same process as the first gate electrode 220 , the second gate line 420 , the first capacitor electrode Cst1 , and the first wiring 20 .

[0201] The second crack stopper 22 may be disposed on the second insulating layer 130 and made of the same or substantially the same material and formed in the same or substantially the same process as the second capacitor electrode Cst2 and the second wiring 30 .

[0202] The first crack stopper 21 and the second crack stopper 22 may each be a metal prevention film that is a floating metal layer that is not electrically connected to other electrodes and lines and that may reduce or prevent propagation of cracks.

[0203] The middle pattern PTc may be disposed on the lower pattern PTa and the third crack detection line 204_3. The middle pattern PTc may be made of the same or substantially the same material and formed in the same or substantially the same process as the first planarization layer 170 and disposed spaced apart from the trench hole TH.

[0204] The crack detection connection lines 51 may be disposed on the intermediate pattern PTc and may include a first crack detection connection line 51_1 connected to the first crack detection line 204_1, a second crack detection connection line 51_2 connected to the second crack detection line 204_2, and a third crack detection connection line 51_3 connected to the third crack detection line 204_3.

[0205] Reference Figure 5 , the third crack detection connection line 51_3 may be formed on the intermediate pattern PTc and the third crack detection line 204_3 on one side of the trench hole HT, and disposed to overlap the third crack detection line 204_3 in a plan view.

[0206] Therefore, the first crack stopper 21 and the second crack stopper 22 made of multiple inorganic insulating films and metal layers can be set to overlap with the crack detection electrode 32 below the crack detection electrode 32 and extend from the crack detection electrode 32, and the crack detection connecting line 51 can be set to overlap with the crack detection line 204 above the crack detection line 204 and extend from the crack detection line 204 to detect cracks caused by the formation of the camera hole H and reduce or prevent the cracks from propagating to the display area AA.

[0207] The third crack detection electrode 32_3, the third crack detection line 204_3 and the third crack detection connection line 51_3 can be electrically connected to send a crack detection signal to the first crack detection signal line 201, and the first crack detection signal line 201 can send a crack detection signal to the second crack detection line 204_2 through the second crack detection connection electrode 203, so that the crack detection pad portion set in the first non-display area NA of the display panel can be electrically connected.

[0208] At least one crack detection pattern portion CPT can be arranged between the camera hole H and the wiring area RK, the crack detection line 204 of each crack detection pattern portion CPT can be electrically connected to the first crack detection signal line 201 to limit the location where the crack occurs, and the first crack detection pattern portion CPT1, the second crack detection pattern portion CPT2 and the third crack detection pattern portion CPT3 can be arranged around the camera hole H to predict the extent of crack expansion.

[0209] A display device according to an embodiment of the present specification can be described as follows.

[0210] A display device according to an embodiment of the present disclosure includes: a substrate, which includes a display area and a first non-display area surrounding the display area, a plurality of pixels and a camera hole may be arranged in the display area, each of the plurality of pixels may include a plurality of transistors, a second non-display area may be arranged between the display area and the camera hole, the second non-display area may include a crack detection pattern portion, the crack detection pattern portion may include a crack detection electrode and a crack detection line surrounding the camera hole, and the crack detection electrode and the crack detection line may be electrically connected to a crack detection signal line.

[0211] According to some embodiments of the present specification, at least one crack detection pattern section may be disposed in the second non-display area, and the at least one crack detection pattern section may include a first crack detection pattern section and a second crack detection pattern section disposed a predetermined distance apart from each other.

[0212] According to some embodiments of the present specification, the dam portion may be provided between the first crack detection pattern portion and the second crack detection pattern portion.

[0213] According to some embodiments of the present specification, the first crack detection electrode of the first crack detection pattern portion may have a different length from the second crack detection electrode of the second crack detection pattern portion.

[0214] According to some embodiments of the present specification, the first crack detection electrode may have a shorter length than the second crack detection electrode.

[0215] According to some embodiments of the present specification, the crack detection signal line may extend to intersect a wiring area provided in the second non-display area and transmit the crack detection signal to the first non-display area.

[0216] According to some embodiments of the present specification, the plurality of transistors may include a first transistor and a second transistor, and a gate electrode of the second transistor may be provided on the gate electrode of the first transistor.

[0217] According to some embodiments of the present specification, the display device may further include a light shielding layer disposed under the first transistor or the second transistor.

[0218] According to some embodiments of the present specification, the crack detection signal line may be made of the same or substantially the same material as the light shielding layer and formed using the same or substantially the same process.

[0219] According to some embodiments of the present specification, the crack detection electrode may be made of the same or substantially the same material as the gate electrode of the second transistor and formed using the same or substantially the same process.

[0220] According to some embodiments of the present specification, the crack detection line may be made of the same or substantially the same material as the source electrode and the drain electrode of the first transistor and the second transistor and formed in the same or substantially the same process.

[0221] According to some embodiments of the present specification, the crack detection electrode may be connected to the crack detection line through a contact hole, and at least a portion of the crack detection electrode or the crack detection line may overlap with the crack stopper.

[0222] A display device according to an embodiment of the present specification may include: a display area on a substrate and a first non-display area surrounding the display area, a plurality of pixels and a camera hole may be arranged in the display area, a second non-display area may be arranged between the display area and the camera hole, the second non-display area may include at least a first crack detection pattern portion and a second crack detection pattern portion, the first crack detection pattern portion and the second crack detection pattern portion may each include a crack detection electrode and a crack detection line, and the lengths of the crack detection electrodes of the first crack detection pattern portion and the second crack detection pattern portion may be different.

[0223] According to some embodiments of the present specification, the plurality of pixels may include a plurality of transistors, and the crack detection electrode and the crack detection line may include the same or substantially the same material as the gate electrodes or the source and drain electrodes of the transistors.

[0224] According to some embodiments of the present specification, the first crack detection pattern portion and the second crack detection pattern portion may be electrically connected to a crack detection signal line disposed below the first crack detection pattern portion and the second crack detection pattern portion.

[0225] According to some embodiments of the present specification, the plurality of pixels may include a plurality of transistors and further include a light-shielding layer disposed under at least one of the plurality of transistors, and the crack detection signal line may be made of the same or substantially the same material as the light-shielding layer and formed with the same or substantially the same process.

[0226] According to some embodiments of the present specification, a crack detection signal line disposed on a substrate, multiple insulating layers on the crack detection signal line, a lower pattern layer on the multiple insulating layers, and a crack detection line disposed on the lower pattern layer may be provided.

[0227] According to some embodiments of the present disclosure, the crack detection line and the crack detection signal line may be connected through trench holes formed in the lower pattern layer and the plurality of insulating layers.

[0228] According to some embodiments of the present specification, a wiring region may be further provided between the display region and the second crack detection pattern portion, and the display device may further include a third crack detection pattern portion between the second crack detection pattern portion and the wiring region.

[0229] According to some embodiments of the present specification, at least one dam portion or a plurality of pattern structures may be provided between the first crack detection pattern portion, the second crack detection pattern portion, and the third crack detection pattern portion.

[0230] According to the display device of the embodiment of this specification, cracks occurring when forming a through hole for a camera and a sensor provided in a display area or cracks occurring near the through hole due to an external impact can be reduced or prevented.

[0231] According to the display device of the embodiment of the present specification, cracks that may be caused by forming a through hole provided in a display area and cracks that occur near the through hole due to external impact can be detected.

[0232] The effects of the present specification are not limited to the above-described effects, and other effects that are not described will be clearly understood by those skilled in the art from the following description.

[0233] Since the contents of the present disclosure described in the above limitations to be solved, the means for solving the limitations, and the effects do not specify essential features of the claims, the scope of the claims is not limited by the items described in the contents of the specification.

[0234] Although the embodiments of the present specification have been described in more detail above with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and various modifications can be performed without departing from the technical concept of the present specification. Therefore, the embodiments disclosed in this specification are not intended to limit the technical concept of the present specification, but are intended to describe the technical concept of the present specification, and the scope of the technical concept of the present specification is not limited by these embodiments. Therefore, it should be understood that the above-mentioned embodiments are illustrative and non-restrictive in all aspects.

Claims

1. A display device, comprising: a substrate comprising a display area and a first non-display area surrounding the display area; a plurality of pixels and a camera hole, wherein the plurality of pixels and the camera hole are arranged in the display area; a plurality of transistors included in each of the plurality of pixels; as well as a second non-display area, the second non-display area being between the display area and the camera hole, Wherein, the second non-display area includes a crack detection pattern portion, and The crack detection pattern portion includes: a crack detection electrode and a crack detection wire surrounding the camera aperture; and A crack detection signal line is electrically connected to the crack detection electrode and the crack detection line.

2. The display device according to claim 1, wherein At least one crack detection pattern portion is disposed in the second non-display area, and the at least one crack detection pattern portion includes a first crack detection pattern portion and a second crack detection pattern portion disposed to be spaced apart from each other by a predetermined distance.

3. The display device according to claim 2, wherein The dam portion is provided between the first crack detection pattern portion and the second crack detection pattern portion.

4. The display device according to claim 2, wherein The first crack detection electrode of the first crack detection pattern portion and the second crack detection electrode of the second crack detection pattern portion have different lengths.

5. The display device according to claim 4, wherein The first crack detection electrode has a shorter length than the second crack detection electrode. The display device according to claim 1 , wherein: The crack detection signal line extends to intersect a wiring area provided in the second non-display area and transmits a crack detection signal to the first non-display area.

7. The display device according to claim 1, wherein The plurality of transistors include a first transistor and a second transistor, and a gate electrode of the second transistor is disposed on the gate electrode of the first transistor. 8 . The display device according to claim 7 , further comprising a light shielding layer provided under the first transistor or the second transistor.

9. The display device according to claim 8, wherein The crack detection signal line is made of the same material and formed by the same process as the light shielding layer.

10. The display device according to claim 7, wherein The crack detection signal line is made of the same material and formed in the same process as the gate electrode of the second transistor.

11. The display device according to claim 7, wherein The crack detection line is made of the same material and formed in the same process as the source electrode and the drain electrode of the first transistor and the second transistor.

12. The display device according to claim 1 , further comprising a crack stopper disposed to overlap at least a portion of the crack detection electrode or the crack detection line. in, The crack detection electrode is connected to the crack detection line through a contact hole.

13. A display device, comprising: a substrate comprising a display area and a first non-display area surrounding the display area; a plurality of pixels and a camera hole, the plurality of pixels and the camera hole being arranged in the display area; as well as a second non-display area, the second non-display area being between the display area and the camera hole, wherein the second non-display area includes at least a first crack detection pattern portion and a second crack detection pattern portion, The first crack detection pattern portion and the second crack detection pattern portion each include a crack detection electrode and a crack detection line, and The first crack detection pattern portion and the second crack detection pattern portion have different lengths.

14. The display device according to claim 13, wherein Each of the plurality of pixels includes a plurality of transistors, and the crack detection electrode and the crack detection line include the same material as a gate electrode, a source electrode, or a drain electrode of the transistor.

15. The display device according to claim 13, wherein The first crack detection pattern portion and the second crack detection pattern portion are electrically connected to a crack detection signal line disposed below the first crack detection pattern portion and the second crack detection pattern portion.

16. The display device according to claim 15, wherein Each of the plurality of pixels includes a plurality of transistors, and The display device further includes a light shielding layer disposed below at least one of the plurality of transistors, and the crack detection signal line is made of the same material and formed in the same process as the light shielding layer.

17. The display device according to claim 15, further comprising: The crack detection signal line is provided on the substrate and a plurality of insulating layers are provided on the crack detection signal line; a lower pattern layer, the lower pattern layer being disposed on the plurality of insulating layers; as well as A crack detection line is provided on the lower pattern layer.

18. The display device according to claim 17, wherein The crack detection line and the crack detection signal line are connected through trench holes formed in the lower pattern layer and the plurality of insulating layers.

19. The display device according to claim 13, further comprising a wiring area provided between the display area and the second crack detection pattern portion, and wherein The display device further includes a third crack detection pattern section between the second crack detection pattern section and the wiring area.

20. The display device according to claim 13, wherein At least one dam portion or a plurality of pattern structures are provided between the first crack detection pattern portion, the second crack detection pattern portion, and the third crack detection pattern portion.

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