Array substrate, display panel and display device

Abstract

The invention discloses an array substrate, a display panel and a display device, and mainly relates to the technical field of display, the array substrate comprises an array substrate, pixel units, a photoelectric conversion unit and a switching circuit, the pixel units are arranged on the array substrate in a matrix mode, each pixel unit comprises a pixel electrode, and the photoelectric conversion unit is arranged on the array substrate. The photoelectric conversion units are arranged between the array substrate and the pixel electrodes, each photoelectric conversion unit is located between every two adjacent pixel electrodes, the photoelectric conversion units are connected with the switching circuit, and the switching circuit is used for controlling the photoelectric conversion units to be connected with one of the energy storage unit and the compensation unit. Through the design, the area of the non-display area of the array substrate cannot be increased, and the preparation cost of the array substrate can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an array substrate, a display panel and a display device. BACKGROUND

[0002] In order to enable the display panel to be normally used in a scene without charging conditions, a photoelectric conversion unit is usually arranged on the display panel, and then the electric energy generated by the photoelectric conversion unit is used in the display of the display panel.

[0003] However, the preparation of the photoelectric conversion unit on the array substrate of the display panel will cause the area of the non-display region of the array substrate to be increased. SUMMARY

[0004] The present application aims to provide an array substrate, a display panel and a display device, which will not cause the area of the non-display region of the array substrate to be increased, and can reduce the preparation cost of the array substrate.

[0005] The present application discloses an array substrate, which comprises an array substrate, a pixel unit, a photoelectric conversion unit and a switching circuit, the pixel unit is arranged in a matrix manner on the array substrate, the pixel unit comprises a pixel electrode, the photoelectric conversion unit is arranged between the array substrate and the pixel electrode, and the photoelectric conversion unit is located between two adjacent pixel electrodes, the photoelectric conversion unit is connected with the switching circuit, and the switching circuit is used for controlling the photoelectric conversion unit to be connected with one of an energy storage unit and a compensation unit.

[0006] Optionally, the switching circuit comprises a second data line, a second scan line, a first active switch, a second active switch and a third active switch.

[0007] The source electrode of the first active switch is connected with the output end of the photoelectric conversion unit, and the drain electrode of the first active switch is used for being connected with the energy storage unit; the source electrode of the second active switch is connected with the output end of the photoelectric conversion unit, the drain electrode of the second active switch is connected with the source electrode of the third active switch, the second scan line is connected with the gate electrode of the third active switch, one end of the second data line is connected with the drain electrode of the third active switch, and the other end of the second data line is used for being connected with the compensation unit.

[0008] The gate electrode of the first active switch is used for receiving a control signal, so as to control the on-off between the output end of the photoelectric conversion unit and the energy storage unit.

[0009] The gate electrode of the second active switch is used for receiving a control signal, so as to control the on-off between the output end of the photoelectric conversion unit and the compensation unit.

[0010] Optionally, the switching circuit comprises a first active switch and a second active switch; a source of the first active switch is connected with an output of the photoelectric conversion unit, a drain of the first active switch is used to be connected with the energy storage unit; a source of the second active switch is connected with the output of the photoelectric conversion unit, a drain of the second active switch is used to be connected with the compensation unit.

[0011] A gate of the first active switch is used to receive a control signal to control on-off between the output of the photoelectric conversion unit and the energy storage unit; a gate of the second active switch is used to receive a control signal to control on-off between the output of the photoelectric conversion unit and the compensation unit.

[0012] Optionally, the first active switch is an N-type active switch, and the second active switch is a P-type active switch.

[0013] Optionally, the gate of the first active switch is also connected with the output of the photoelectric conversion unit, and the gate of the second active switch is also connected with the output of the photoelectric conversion unit.

[0014] Optionally, the switching circuit further comprises a first control line and a second control line, the first control line is connected with the gate of the first active switch, and the first control line is used to receive a control signal output by a switching control unit; the second control line is connected with the gate of the second active switch, and the second control line is used to receive a control signal output by the switching control unit.

[0015] Optionally, the array substrate comprises a plurality of detection areas, each of the detection areas comprises a plurality of pixel units arranged in a matrix and one photoelectric conversion unit.

[0016] The photoelectric conversion unit comprises a photoelectric gate, a photoelectric semiconductor layer, a photoelectric source and a photoelectric drain, the photoelectric gate, the photoelectric semiconductor layer, the photoelectric source and the photoelectric drain are all arranged on the array substrate, and two ends of the photoelectric semiconductor layer are connected with the photoelectric source and the photoelectric drain respectively.

[0017] A source of the second active switch is connected with the photoelectric drain, and a source of the second active switch is connected with the photoelectric drain, and the photoelectric source is grounded.

[0018] A gap between two adjacent pixel units is defined as a pixel interval area, the photoelectric semiconductor layer is at least partially located in the pixel interval area, and the photoelectric semiconductor layer is in a mesh shape.

[0019] Optionally, the photoelectric conversion unit comprises a photoelectric gate, a photoelectric semiconductor layer, a photoelectric source and a photoelectric drain, the photoelectric gate, the photoelectric semiconductor layer, the photoelectric source and the photoelectric drain are all arranged on the array substrate, and two ends of the photoelectric semiconductor layer are connected with the photoelectric source and the photoelectric drain respectively.

[0020] The source of the second active switch is connected with the photoelectric drain, the source of the second active switch is connected with the photoelectric drain, and the photoelectric source is grounded.

[0021] A channel is formed between the photoelectric source and the photoelectric drain, the length of the channel is greater than the interval between two adjacent pixel electrodes, and in the length direction of the channel, the orthographic projection of the photoelectric semiconductor layer on the array substrate covers at least the orthographic projection of the part where the two adjacent pixel electrodes are close to each other on the array substrate.

[0022] The application further discloses a display panel, which comprises an array substrate.

[0023] The application further discloses a display device, which comprises a driving circuit and a display panel, and the driving circuit drives the display panel to display a picture.

[0024] Compared with the prior art, the array substrate of the application sets the photoelectric conversion unit between two adjacent pixel electrodes in the plane, so that the area of the non-display region of the array substrate is not increased, thereby reducing the frame width of the display panel; in the case of sufficient ambient light, the pixel electrode does not need to be compensated by voltage, and the current generated by the photoelectric conversion unit is also large, so the large current generated by the photoelectric conversion unit can be stored when the photoelectric conversion unit is connected with the energy storage unit, thereby improving the power generation efficiency; in the case of insufficient ambient light, the pixel electrode can be compensated by voltage to improve the picture uniformity of the display panel, and the current generated by the photoelectric conversion unit is also small, so the power generation efficiency is also low, and therefore the current generated by the photoelectric conversion unit can be used to detect the area brightness of the display panel when the photoelectric conversion unit is connected with the compensation unit, so that two sets of independent photoelectric conversion units are not needed, one set is used for detection and the other set is used for power generation, thereby reducing the preparation cost of the array substrate. BRIEF DESCRIPTION OF DRAWINGS

[0025] The accompanying drawings, which are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It will be appreciated that the appended drawings are not intended to be exhaustive or limiting of the application. It will be apparent to those skilled in the art that other embodiments of the application can be devised without departing from the scope of the application. As will be realized, the application is capable of other different obvious aspects and should not be limited to the described embodiments.

[0026] Figure 1 is a schematic diagram of a display device according to an embodiment of the present application;

[0027] Figure 2 is a schematic diagram of a display panel according to an embodiment of the present application;

[0028] Figure 3 is a schematic diagram of an array substrate according to a first embodiment of the present application;

[0029] Figure 4 is a schematic diagram of a photoelectric conversion unit according to a first embodiment of the present application;

[0030] Figure 5 is a schematic diagram of a first switching circuit according to a first embodiment of the present application;

[0031] Figure 6 is a schematic diagram of a second switching circuit according to a first embodiment of the present application;

[0032] Figure 7 is a schematic diagram of a third switching circuit according to a first embodiment of the present application;

[0033] Figure 8 is a plan view of an array substrate according to a first embodiment of the present application;

[0034] Figure 9 is a plan view of a photoelectric semiconductor layer according to a first embodiment of the present application;

[0035] Figure 10 is a schematic diagram of a common electrode block according to a first embodiment of the present application;

[0036] Figure 11 is a schematic diagram of an array substrate according to a second embodiment of the present application;

[0037] Figure 12 is a schematic diagram of a photoelectric semiconductor layer according to a second embodiment of the present application.

[0038] Wherein, 10, display device; 20, driving circuit; 30, display panel; 40, energy storage unit; 50, compensation unit; 60, switching control unit; 100, array substrate; 110, detection area; 120, pixel interval area; 130, array substrate; 200, pixel unit; 210, pixel electrode; 221, first data line; 222, first scan line; 230, pixel active switch; 300, photoelectric conversion unit; 310, photoelectric grid; 320, photoelectric semiconductor layer; 330, photoelectric source electrode; 340, photoelectric drain electrode; 400, switching circuit; 411, second data line; 412, second scan line; 421, first active switch; 422, second active switch; 423, third active switch; 431, first control line; 432, second control line; 433, third control line; 500, electrophoretic layer; 510, microcapsule; 520, electrophoretic particle; 530, common electrode layer; 540, opposite substrate; 550, polymer microlens layer; 551, polymer microlens structure; 560, light waveguide layer; 610, common electrode block; 620, tilt pad. DETAILED DESCRIPTION

[0039] It needs to be understood that the terms used herein, the specific structures and functional details disclosed, are only for the purpose of describing specific embodiments, and are representative, but the present application can be embodied in many alternative forms, and should not be interpreted as being limited to the embodiments described herein.

[0040] In the description of the present application, the terms "first", "second" are only for the purpose of description, and should not be understood as indicating relative importance, or implying the number of the indicated technical features. Therefore, unless otherwise specified, the features limited by "first", "second" can explicitly or implicitly include one or more of the features; the meaning of "multiple" is two or more. The term "includes" and any variation thereof means non-exclusive inclusion, and one or more other features, integers, steps, operations, units, components and / or combinations thereof can exist or be added.

[0041] In addition, the terms indicating the orientation or positional relationship of "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like are described based on the orientation or relative position relationship shown in the drawings, and are only for the purpose of facilitating the simplified description of the present application, and do not indicate that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0042] In addition, unless specifically stated and limited otherwise, the terms "mounting", "connected", "connecting" should be interpreted broadly, for example, can be fixedly connected, can be detachably connected, or integrally connected; can be mechanically connected, can be electrically connected; can be directly connected, can be indirectly connected through an intermediate medium, or can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0043] The application will be described in detail below with reference to the accompanying drawings and optional embodiments.

[0044] Figure 1 is a schematic diagram of a display device according to an embodiment of the application, as shown in the figure, the application discloses a display device 10, the display device 10 includes driving circuit 20 and display panel 30, the driving circuit 20 drives the display panel 30 to display picture. Figure 1

[0045] Figure 2 is a schematic diagram of a display panel according to an embodiment of the application, as shown in the figure, the application further discloses a display panel 30, the display panel 30 includes array substrate 100. Figure 2

[0046] Moreover, the technical scheme of the application can be widely used in various display panels 30, such as TN (Twisted Nematic, twisted nematic) display panel 30, IPS (In-Plane Switching, in-plane switching) display panel 30, VA (Vertical Alignment, vertical alignment type) display panel 30, MVA (Multi-Domain Vertical Alignment, multi-domain vertical alignment type) display panel 30.

[0047] Of course, it can also be other types of display panel 30, such as OLED (Organic Light-Emitting Diode, organic light emitting diode) display panel 30 and electronic paper display panel 30, which can be applied to the above scheme.

[0048] For the convenience of description, the display panel 30 is taken as an example of electronic paper display panel 30.

[0049] The display panel 30 further includes electrophoretic layer 500, common electrode layer 530 and opposite substrate 540, the electrophoretic layer 500 is arranged between the opposite substrate 540 and the array substrate 100, and the common electrode layer 530 is arranged on the side of the electrophoretic layer 500 away from the array substrate 100.

[0050] ​​The common electrode layer 530 and the pixel electrode 210 can both use high light transmittance materials, including ITO (indium tin oxide), graphene, conductive polymer PEDOT (poly 3,4-ethylenedioxythiophene) and PSS (ion polymer), or silver nanowire mesh, which has better light transmittance and conductivity than ITO, and can be adapted to a flexible electronic paper display panel 30.

[0051] In some embodiments, the electrophoretic layer 500 includes microcapsules 510 filled with electrophoretic particles 520, which are driven to move between the common electrode layer 530 and the pixel electrode 210 of the array substrate 100 by forming an electric field between the common electrode layer 530 and the pixel electrode 210 of the array substrate 100 to reflect and absorb external light, thereby realizing the display of the picture.

[0052] The display panel 30 also includes an energy storage unit 40 for storing the electrical energy generated by the photoelectric conversion unit 300 in the array substrate 100, and a compensation unit 50 for detecting the current generated by the photoelectric conversion unit 300 in different area coordinates of the array substrate 100, and serving as a basis for compensating the voltage of the pixel electrode 210 corresponding to the area coordinates.

[0053] For example, when the compensation unit 50 detects that the current generated by the photoelectric conversion unit 300 at two different target positions differs by more than a preset difference, the control driving circuit 20 gives the area with lower current generated by the photoelectric conversion unit 300 a more appropriate voltage corresponding to the pixel electrode 210, thereby compensating the brightness of the display panel 30.

[0054] The display panel 30 also includes a switching control unit 60 for outputting a control signal to control whether the current generated by the photoelectric conversion unit 300 is transmitted to the energy storage unit 40 or the compensation unit 50.

[0055] The present application also discloses an array substrate 100 which can be used in the display panel 30 described above. For the array substrate 100, the present application provides the following design, which is specifically introduced through several embodiments:

[0056] Embodiment 1:

[0057] Figure 3 is a schematic diagram of an array substrate according to the first embodiment of the present application, Figure 4 is a schematic diagram of a photoelectric conversion unit according to the first embodiment of the present application, combined with Figures 2-4As shown, the array substrate 100 disclosed in the present application comprises an array substrate 130, pixel units 200, a photoelectric conversion unit 300 and a switching circuit 400. The pixel units 200 are arranged in a matrix on the array substrate 130, and each pixel unit 200 comprises a pixel electrode 210. The photoelectric conversion unit 300 is arranged between the array substrate 130 and the pixel electrode 210, and is located between two adjacent pixel electrodes 210. The photoelectric conversion unit 300 is connected to the switching circuit 400, and the switching circuit 400 is used to control the connection between the photoelectric conversion unit 300 and one of an energy storage unit 40 and a compensation unit 50.

[0058] For example, when the current generated by the photoelectric conversion unit 300 exceeds an energy storage threshold, the switching circuit 400 controls the photoelectric conversion unit 300 to be connected to the energy storage unit 40, so that the photoelectric current generated by the photoelectric conversion unit 300 can be stored, for example, to power the display screen of the electronic paper display panel 30. When the current generated by the photoelectric conversion unit 300 is less than or equal to the energy storage threshold, the switching circuit 400 controls the photoelectric conversion unit 300 to be connected, so that the photoelectric current generated by the photoelectric conversion unit 300 can be detected, thereby obtaining the brightness of each region of the display panel 30, and the pixel electrode 210 is compensated according to the brightness of each region coordinate.

[0059] Compared with the existing array substrate scheme, the array substrate 100 disclosed in the present application sets the photoelectric conversion unit 300 between two adjacent pixel electrodes 210 in the plane, so that the area of the non-display region of the array substrate 100 is not increased, thereby reducing the frame width of the display panel 30.

[0060] In addition, in the case of sufficient external ambient light, the pixel electrode 210 does not need to be compensated by voltage at this time. Since the current generated by the photoelectric conversion unit 300 is also large, the photoelectric conversion unit 300 is connected to the energy storage unit 40 at this time, so that the large current generated by the photoelectric conversion unit 300 can be stored, thereby improving the power generation efficiency.

[0061] When the ambient light is insufficient, the voltage of the pixel electrode 210 can be compensated to improve the picture uniformity of the display panel. Since the current generated by the photoelectric conversion unit 300 is small and the power generation efficiency is low, the photoelectric conversion unit 300 is connected to the compensation unit 50 at this time, so that the current generated by the photoelectric conversion unit 300 can be used to detect the area brightness of the display panel 30. In this way, two sets of independent photoelectric conversion units 300 are not needed, one for detection and one for power generation, which reduces the preparation cost of the array substrate 100. Moreover, the current is stored when the power generation efficiency of the photoelectric conversion unit 300 is high, and is used to detect the area brightness of the display panel 30 when the power generation efficiency of the photoelectric conversion unit 300 is low, which can improve the power generation efficiency of the array substrate 100.

[0062] Figure 5 is a schematic diagram of a first switching circuit of the first embodiment of the present application, which is combined with Figure 5 As shown in the figure, the switching circuit 400 includes a first active switch 421 and a second active switch 422. The source of the first active switch 421 is connected to the output end of the photoelectric conversion unit 300, and the drain of the first active switch 421 is used to be connected to the energy storage unit 40. The source of the second active switch 422 is connected to the output end of the photoelectric conversion unit 300, and the drain of the second active switch 422 is used to be connected to the compensation unit 50.

[0063] The gate of the first active switch 421 is used to receive a control signal to control the on-off between the output end of the photoelectric conversion unit 300 and the energy storage unit 40. The gate of the second active switch 422 is used to receive a control signal to control the on-off between the output end of the photoelectric conversion unit 300 and the compensation unit 50.

[0064] For example, when the current generated by the photoelectric conversion unit 300 needs to be transmitted to the energy storage unit 40, the first active switch 421 is controlled to be open and the second active switch 422 is controlled to be closed. When the current generated by the photoelectric conversion unit 300 needs to be transmitted to the compensation unit 50, the second active switch 422 is controlled to be open and the first active switch 421 is controlled to be closed.

[0065] Moreover, a first control line 431 and a second control line 432 can be provided. The first control line 431 is connected to the gate of the first active switch 421, and the first control line 431 is used to receive a control signal output by the switching control unit 60. The second control line 432 is connected to the gate of the second active switch 422, and the second control line 432 is used to receive a control signal output by the switching control unit 60.

[0066] In this way, when the current generated by the photoelectric conversion unit 300 needs to be transmitted to the storage unit 40, the switching control unit 60 outputs a control signal to the first control line 431 to control the first active switch 421 to be open, and outputs a control signal to the second control line 432 to control the second active switch 422 to be closed; when the current generated by the photoelectric conversion unit 300 needs to be transmitted to the compensation unit 50, the switching control unit 60 outputs a control signal to the second control line 432 to control the second active switch 422 to be open, and outputs a control signal to the first control line 431 to control the first active switch 421 to be closed.

[0067] Figure 6 Fig. 4 is a schematic diagram of a second switching circuit of the first embodiment of the present application, as shown in Figure 6 The second switching circuit 400 is provided with only a third control line 433, which is connected to the gate of the first active switch 421 and used to receive a control signal output by the switching control unit 60; the third control line 433 is also connected to the gate of the second active switch 422 and used to receive a control signal output by the switching control unit 60, and the first active switch 421 is a P-type active switch and the second active switch 422 is an N-type active switch.

[0068] In this way, when the current generated by the photoelectric conversion unit 300 needs to be transmitted to the storage unit 40, the switching control unit 60 outputs a low-level control signal to the third control line 433 to control the first active switch 421 to be open and the second active switch 422 to be closed; when the current generated by the photoelectric conversion unit 300 needs to be transmitted to the compensation unit 50, the switching control unit 60 outputs a high-level control signal to the third control line 433 to control the second active switch 422 to be open and the first active switch 421 to be closed.

[0069] The first active switch 421 and the second active switch 422 can be controlled by a high-level control signal or a low-level control signal output by the switching control unit 60; and since the time for the photoelectric conversion unit 300 to charge the storage unit is much longer than the time for the photoelectric conversion unit 300 to input current to the compensation unit 50, the first active switch 421 is set as a P-type active switch and the second active switch 422 is set as an N-type active switch, so that when the storage unit 40 needs to be charged, only a low-level control signal needs to be output to the third control line 433, thereby reducing the energy consumption of the display panel 30.

[0070] Figure 7 Fig. 5 is a schematic diagram of a third switching circuit of the first embodiment of the present application, as shown in Figure 7As shown, the first active switch 421 of the third switching circuit 400 is an N-type active switch, and the second active switch 422 is a P-type active switch. The gate of the first active switch 421 is also connected to the output terminal of the photoelectric conversion unit 300, and the gate of the second active switch 422 is also connected to the output terminal of the photoelectric conversion unit 300.

[0071] In the third switching circuit 400 of the present application, the first active switch 421 is an N-type active switch, and the second active switch 422 is a P-type active switch. The output terminal of the photoelectric conversion unit 300 is connected to the gate of the first active switch 421 and the gate of the second active switch 422. The Vth of the first active switch 421 and the Vth of the second active switch 422 can be designed when the first active switch 421 and the second active switch 422 are manufactured. When the current generated by the photoelectric conversion unit 300 exceeds the energy storage threshold, the first active switch 421 is controlled to be turned on, and the second active switch 422 is controlled to be turned off. When the current generated by the photoelectric conversion unit 300 is less than or equal to the energy storage threshold, the second active switch 422 is controlled to be turned on, and the first active switch 421 is controlled to be turned off. Thus, the current output by the photoelectric conversion unit 300 is determined to be used in the energy storage unit 40 or the compensation unit 50.

[0072] Compared with the first switching circuit 400 and the second switching circuit 400, the third switching circuit 400 of the present application does not need to set an additional switching control unit 60 to separately control the on-off of the first active switch 421 and the second active switch 422, thereby simplifying the circuit design and the control method.

[0073] Figure 8 is a plan view of an array substrate of the first embodiment of the present application, Figure 9 is a plan view of a photoelectric semiconductor layer of the first embodiment of the present application, in combination with Figures 8-9 As shown, the array substrate 100 further includes a first data line 221 and a first scan line 222. The pixel unit 200 includes a pixel active switch 230. The first data line 221 is connected to the pixel electrode 210 through the pixel active switch 230. The first scan line 222 is connected to the pixel active switch 230.

[0074] The array substrate 100 includes a plurality of pixel units 200, and one small-area photoelectric conversion unit 300 can be arranged in one pixel unit 200, or a plurality of pixel units 200 can be arranged in one large-area photoelectric conversion unit 300. In this embodiment, the large-area photoelectric conversion unit 300 is arranged in the plurality of pixel units 200, so that the current generated by the photoelectric conversion unit 300 is larger, and the total area for generating electricity is larger due to the absence of a plurality of small-area photoelectric conversion units 300.

[0075] Specifically, the array substrate 100 includes a plurality of detection areas 110, each of which includes a plurality of pixel units 200 arranged in a matrix and one photoelectric conversion unit 300.

[0076] The photoelectric conversion unit 300 includes a photoelectric gate 310, a photoelectric semiconductor layer 320, a photoelectric source 330, and a photoelectric drain 340, which are all arranged on the array substrate 130, and the photoelectric semiconductor layer 320 is connected to the photoelectric source 330 and the photoelectric drain 340 at two ends thereof.

[0077] The source of the second active switch 422 is connected to the photoelectric drain 340, the source of the second active switch 422 is connected to the photoelectric drain 340, and the photoelectric source 330 is grounded.

[0078] The gap between two adjacent pixel units 200 is defined as a pixel interval area 120, the photoelectric semiconductor layer 320 is at least partially located in the pixel interval area 120, and the photoelectric semiconductor layer 320 is in a mesh shape.

[0079] The pixel interval areas 120 in a mesh shape are formed between the plurality of pixel units 200 arranged in a matrix, and the photoelectric semiconductor layer 320 in the photoelectric conversion unit 300 mainly converts light energy into electric energy, so that the photoelectric semiconductor layer 320 is arranged in a mesh shape, so that external light can be irradiated onto the mesh-shaped photoelectric semiconductor layer 320 through the mesh-shaped pixel interval areas 120, thereby generating a photoelectric current in the photoelectric conversion unit 300.

[0080] For example, the photoelectric conversion unit 300 selects a junction field effect transistor (JFET) input stage operational amplifier, and the input current noise is less than 0.1 pA / √Hz, which is used to shield the high-frequency interference of the metal wire.

[0081] For example, nine pixel units 200 can form a detection region 110, or 36 pixel units 200 can form a detection region 110, which can improve the power generation efficiency and simplify the circuit complexity.

[0082] Moreover, a channel is formed between the photoelectric source electrode 330 and the photoelectric drain electrode 340, the length of the channel is greater than the interval between two adjacent pixel electrodes 210; and in the length direction of the channel, the orthographic projection of the photoelectric semiconductor layer 320 on the array substrate 130 covers the orthographic projection of the part of two adjacent pixel electrodes 210 on the array substrate 130. Thus, the light between two adjacent pixel electrodes 210 can also be received by the photoelectric semiconductor layer 320 to generate photoelectric current, which is equivalent to increasing the light receiving area.

[0083] In combination with Figure 2 and Figure 3 Moreover, the display panel 30 of the present application further comprises a polymer microlens layer 550, the polymer microlens layer 550 is disposed on the opposite substrate 540, and the polymer microlens layer 550 comprises polymer microlens structures 551, the polymer microlens structures 551 are in a mesh shape, the polymer microlens structures 551 are located on the pixel spacing region 120, and the orthographic projection of the polymer microlens structures 551 on the array substrate 130 covers the orthographic projection of the photoelectric semiconductor layer 320 on the array substrate 130.

[0084] The light irradiated on the polymer microlens structures 551 can be collected on the underlying photoelectric conversion unit 300, and specifically can be collected on the photoelectric semiconductor layer 320. By disposing the polymer microlens layer 550, the light can be guided to be collected on the photoelectric semiconductor layer 320 to generate more carriers, thereby improving the power generation efficiency.

[0085] Moreover, the array substrate 100 of the present application further comprises a light waveguide layer 560, the light waveguide layer 560 is disposed on the array substrate 130, and the light waveguide layer 560 is located above the photoelectric conversion unit 300. The light waveguide layer 560 can guide the light irradiated on other regions of the light waveguide layer 560 above the photoelectric semiconductor layer 320 to the photoelectric semiconductor layer 320 above, and the light can be irradiated on the photoelectric semiconductor layer 320 through the light waveguide layer 560, thereby further improving the power generation efficiency.

[0086] Figure 10 is a schematic view of a common electrode block of the first embodiment of the present application, as Figure 10As shown, the pixel unit 200 of the present application also includes a common electrode block 610 and an inclined pad 620, and the inclined pad 620 is arranged on the array substrate 130, and the common electrode block 610 is arranged on the inclined pad 620, and the photoelectric semiconductor layer 320 is located between the common electrode block 610 and the pixel electrode 210, and the top of the inclined pad 620 is an inclined surface, and the inclined surface faces the photoelectric semiconductor layer 320, and the common electrode block 610 is made of metal reflective material. The common electrode block 610 is used to form a storage capacitor with the pixel electrode 210. By arranging the inclined pad 620 under the common electrode 610, part of the light passing through the pixel electrode 210 can be reflected onto the photoelectric semiconductor layer 320 after being irradiated by the common electrode block 610, thereby further improving the power generation efficiency of the photoelectric conversion unit 300.

[0087] Example 2:

[0088] Figure 11 is a schematic diagram of an array substrate according to the second embodiment of the present application. Figure 12 is a schematic diagram of a photoelectric semiconductor layer according to the second embodiment of the present application. Figures 11-12 As shown, compared with the solution of the first embodiment, the difference of the second embodiment is that a third active switch 423, a second data line 411 and a second scan line 412 are provided.

[0089] The third active switch 423 is used to locate the regional coordinates of the photoelectric conversion unit 300. After the third active switch 423 is set, even if one pixel unit 200 corresponds to one photoelectric conversion unit 300, when the current generated by the photoelectric conversion unit 300 is input to the compensation unit 50, it is also possible to determine at which coordinate the photoelectric conversion unit 300 generates the current. Specifically:

[0090] The switching circuit 400 includes a second data line 411 , a second scan line 412 , a first active switch 421 , a second active switch 422 , and a third active switch 423 .

[0091] The source of the first active switch 421 is connected to the output end of the photoelectric conversion unit 300, and the drain of the first active switch 421 is used to be connected to the energy storage unit 40; the source of the second active switch 422 is connected to the output end of the photoelectric conversion unit 300, and the drain of the second active switch 422 is connected to the source of the third active switch 423, the second scan line 412 is connected to the gate of the third active switch 423, one end of the second data line 411 is connected to the drain of the third active switch 423, and the other end of the second data line 411 is used to be connected to the compensation unit 50.

[0092] The gate of the first active switch 421 is used to receive a control signal to control the on-off between the output end of the photoelectric conversion unit 300 and the energy storage unit 40. The gate of the second active switch 422 is used to receive a control signal to control the on-off between the output end of the photoelectric conversion unit 300 and the compensation unit 50.

[0093] For example, in a pixel unit 200 corresponding to a photoelectric conversion unit 300, when the current generated by the photoelectric conversion unit 300 is low, the first active switch 421 is closed, the second active switch 422 is opened, and the current generated by the photoelectric conversion unit 300 flows to the third active switch 423. By controlling the second scan line 412 to open the third active switch 423 in sequence, the current generated by a row of photoelectric conversion units 300 can enter the compensation unit 50 along different second data lines 411, so that the brightness corresponding to the surrounding of each pixel unit 200 can be obtained, and thus the brightness of the entire display panel 30 can be obtained.

[0094] Compared with the scheme of the first embodiment, it is not necessary to separately connect each photoelectric conversion unit 300 to the compensation unit 50 by a line, so that when very accurate compensation is required, one pixel unit 200 can correspond to one photoelectric conversion unit 300, and the brightness of the surrounding of each pixel unit 200 can be determined, so that accurate compensation can be performed.

[0095] Of course, it can be understood that even if multiple pixel units 200 correspond to one large-area photoelectric conversion unit 300, the coordinates of the photoelectric conversion unit 300 can be located by setting the third active switch 423, the second data line 411, and the second scan line 412, so that the light brightness of the corresponding region of multiple pixel units 200 can be obtained.

[0096] It should be noted that the inventive concept of the present application can form a very large number of embodiments, but the length of the application file is limited and cannot list all the embodiments, so that the above-described embodiments or technical features can be combined to form new embodiments without conflict. After the combination of each embodiment or technical feature, the original technical effect will be enhanced.

[0097] The above is a further detailed description of the present application in combination with specific optional embodiments, and the specific implementation of the present application cannot be limited to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be regarded as falling within the protection scope of the present application.

Claims

1. An array substrate, characterized in that: The array substrate includes an array substrate, a pixel unit, a photoelectric conversion unit and a switching circuit. The pixel unit is arranged in a matrix on the array substrate. The pixel unit includes a pixel electrode. The photoelectric conversion unit is arranged between the array substrate and the pixel electrode, and the photoelectric conversion unit is located between two adjacent pixel electrodes. The photoelectric conversion unit is connected to the switching circuit, and the switching circuit is used to control the photoelectric conversion unit to connect to one of the energy storage unit and the compensation unit.

2. The array substrate according to claim 1, wherein: The switching circuit includes a second data line, a second scan line, a first active switch, a second active switch and a third active switch; The source of the first active switch is connected to the output end of the photoelectric conversion unit, and the drain of the first active switch is used to be connected to the energy storage unit; the source of the second active switch is connected to the output end of the photoelectric conversion unit, and the drain of the second active switch is connected to the source of the third active switch, the second scan line is connected to the gate of the third active switch, one end of the second data line is connected to the drain of the third active switch, and the other end of the second data line is used to be connected to the compensation unit; The gate of the first active switch is used to receive a control signal to control the connection between the output end of the photoelectric conversion unit and the energy storage unit; The gate of the second active switch is used to receive a control signal to control the connection between the output end of the photoelectric conversion unit and the compensation unit.

3. The array substrate according to claim 1, wherein: The switching circuit includes a first active switch and a second active switch; the source of the first active switch is connected to the output end of the photoelectric conversion unit, and the drain of the first active switch is used to connect to the energy storage unit; the source of the second active switch is connected to the output end of the photoelectric conversion unit, and the drain of the second active switch is used to connect to the compensation unit; The gate of the first active switch is used to receive a control signal to control the connection between the output end of the photoelectric conversion unit and the energy storage unit; The gate of the second active switch is used to receive a control signal to control the connection between the output end of the photoelectric conversion unit and the compensation unit.

4. The array substrate according to any one of claims 2 and 3, characterized in that: The first active switch is an N-type active switch, and the second active switch is a P-type active switch.

5. The array substrate according to claim 4, wherein: The gate of the first active switch is further connected to the output end of the photoelectric conversion unit, and the gate of the second active switch is further connected to the output end of the photoelectric conversion unit.

6. The array substrate according to any one of claims 2 and 3, characterized in that: The switching circuit further includes a first control line and a second control line, wherein the first control line is connected to the gate of the first active switch and is used to receive a control signal output by the switching control unit; the second control line is connected to the gate of the second active switch and is used to receive a control signal output by the switching control unit.

7. The array substrate according to claim 3, wherein: The array substrate includes a plurality of detection areas, each of the detection areas includes a plurality of pixel units arranged in a matrix and one photoelectric conversion unit; The photoelectric conversion unit includes a photoelectric gate, a photoelectric semiconductor layer, a photoelectric source electrode and a photoelectric drain electrode, wherein the photoelectric gate, the photoelectric semiconductor layer, the photoelectric source electrode and the photoelectric drain electrode are all arranged on the array substrate, and the two ends of the photoelectric semiconductor layer are respectively connected to the photoelectric source electrode and the photoelectric drain electrode; The source of the second active switch is connected to the photoelectric drain, the source of the second active switch is connected to the photoelectric drain, and the photoelectric source is grounded; A gap between two adjacent pixel units is defined as a pixel spacing region. The photoelectric semiconductor layer is at least partially located in the pixel spacing region, and the photoelectric semiconductor layer is in a mesh shape.

8. The array substrate according to any one of claims 2 and 3, wherein: The photoelectric conversion unit includes a photoelectric gate, a photoelectric semiconductor layer, a photoelectric source electrode and a photoelectric drain electrode, wherein the photoelectric gate, the photoelectric semiconductor layer, the photoelectric source electrode and the photoelectric drain electrode are all arranged on the array substrate, and the two ends of the photoelectric semiconductor layer are respectively connected to the photoelectric source electrode and the photoelectric drain electrode; The source of the second active switch is connected to the photoelectric drain, the source of the second active switch is connected to the photoelectric drain, and the photoelectric source is grounded; A channel is formed between the photoelectric source electrode and the photoelectric drain electrode, and the length of the channel is greater than the spacing between two adjacent pixel electrodes; and in the length direction of the channel, the orthographic projection of the photoelectric semiconductor layer on the array substrate at least covers the orthographic projection of the parts of the two adjacent pixel electrodes that are close to each other on the array substrate.

9. A display panel, characterized in that: The display panel includes the array substrate according to any one of claims 1 to 8.

10. A display device, characterized in that: The display device includes a driving circuit and the display panel according to claim 9, wherein the driving circuit drives the display panel to display an image.

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