A 3D reconstruction method and preparation method based on multi-view cross-sectional images

Abstract

This invention provides a three-dimensional reconstruction method and preparation method based on multi-view cross-sectional images. The three-dimensional reconstruction method includes: acquiring a first image of a row of ports to be detected cleaved by a first cleaving surface, and acquiring a second image of a row of ports to be detected cleaved by a second cleaving surface; acquiring a first projection line of the first sub-image along a fifth direction and a second projection line of the second sub-image along a sixth direction; acquiring a first line drawing and a second line drawing; acquiring a first contour closure drawing based on the first line drawing and a second contour closure drawing based on the second line drawing; when the similarity between the first contour closure drawing and the second contour closure drawing reaches a first upper limit value, using the first contour closure drawing as a first feature contour drawing and the second contour closure drawing as a second feature contour drawing; performing matching processing to make the overlap area of ​​the first feature contour drawing and the second feature contour drawing reach a second upper limit value; and acquiring a test three-dimensional image based on the relative position change, the first three-dimensional image, and the second three-dimensional image.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and specifically to a three-dimensional reconstruction method and preparation method based on multi-view cross-sectional images. Background Technology

[0002] In recent years, with the increasing demand for high-speed and high-efficiency semiconductor lasers, surface-emitting photonic crystal lasers (PCSELs) have shown great application potential in the fields of next-generation optical interconnects, optical computing, and artificial intelligence optical communications due to their unique two-dimensional photonic crystal structure and large-area single-mode emission characteristics.

[0003] However, it is difficult to accurately monitor the size and shape of the port to be tested. For example, improving the performance of the device structure of a photonic crystal surface-emitting laser faces many challenges in actual manufacturing. Summary of the Invention

[0004] Therefore, the technical problem to be solved by the present invention is how to accurately monitor the shape and size of the air port to be tested, thereby providing a three-dimensional reconstruction method and preparation method based on multi-view cross-sectional images.

[0005] This application provides a three-dimensional reconstruction method based on multi-view cross-sectional images, comprising: forming a structure to be tested, the structure to be tested including a plurality of ports to be detected arranged in an array along a first direction and a second direction; acquiring a first image of a row of ports to be detected cleaved by a first cleaving surface, the first image including a plurality of first sub-images arranged at intervals along a third direction; acquiring a second image of a row of ports to be detected cleaved by a second cleaving surface, the second image including a plurality of second sub-images arranged at intervals along a fourth direction; the second cleaving surface being perpendicular to the first cleaving surface; and acquiring each first sub-image based on the center of the plurality of first sub-images in the first image. The first anchor point is obtained by acquiring the second anchor point of each second sub-image based on the center of multiple second sub-images in the second image; a first projection line of the first sub-image along a fifth direction is obtained, the fifth direction being parallel to the first sub-image and perpendicular to the third direction, and the projection of the first anchor point onto the first projection line is the first anchor projection point; a second projection line of the second sub-image along a sixth direction is obtained, the sixth direction being parallel to the second sub-image and perpendicular to the fourth direction, and the projection of the second anchor point onto the second projection line is the second anchor projection point; multiple first line graphs and multiple second line graphs are obtained; wherein, the multiple first projection lines in the first line graphs are... The first projection lines are arranged sequentially with spacing, and the line connecting the first anchor projection points of the multiple first projection lines is a straight line that intersects the first projection lines. The second projection lines in the second line diagram are arranged sequentially with equal spacing, and the line connecting the second anchor projection points of the multiple second projection lines is a straight line that intersects the second projection lines. The second projection lines are perpendicular to the first projection lines. A first contour closure image is obtained based on the first line diagram, and a second contour closure image is obtained based on the second line diagram. When the similarity between the first contour closure image and the second contour closure image reaches a first upper limit value, the first contour closure image is used as the first feature contour image, and the second contour closure image is used as the second feature contour image. The first feature contour image and the second feature contour image are matched to make the overlap area of ​​the first feature contour image and the second feature contour image reach a second upper limit value. The relative positional change of the first feature contour image and the second feature contour image after the matching process is obtained relative to before the matching process. A first three-dimensional image is obtained based on the first sub-image and the first line diagram corresponding to the first feature contour image, and a second three-dimensional image is obtained based on the second sub-image and the second line diagram corresponding to the second feature contour image. A test three-dimensional image is obtained based on the relative positional change, the first three-dimensional image, and the second three-dimensional image.

[0006] In some implementations, the first cleavage surface is not parallel to the first direction; the second cleavage surface is not parallel to the second direction.

[0007] In some embodiments, forming the structure under test includes: forming a test active layer; and forming a test photonic crystal layer on one side of the test active layer; wherein forming the test photonic crystal layer includes: forming a first test semiconductor layer having a test groove; and forming a second test semiconductor layer located on the inner wall of the test groove and on the side of the first test semiconductor layer opposite to the test active layer, the second test semiconductor layer having the detection hole; wherein the port to be tested is the test groove, or the port to be tested is the detection hole.

[0008] In some embodiments, the first cleavage plane is perpendicular to the first crystal orientation of the second test semiconductor layer, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer; or, the first cleavage plane is perpendicular to the first crystal orientation of the first test semiconductor layer, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer.

[0009] In some embodiments, a scanning electron microscope is used to acquire a first image, wherein the probe surface of the scanning electron microscope is parallel to the first cleavage plane during the acquisition of the first image; a scanning electron microscope is used to acquire a second image, wherein the probe surface of the scanning electron microscope is parallel to the second cleavage plane during the acquisition of the second image.

[0010] In some embodiments, the first image includes a first sub-image to the Mth first sub-image arranged at intervals along a third direction; the second image includes a first second sub-image to the Nth second sub-image arranged at intervals along a fourth direction; wherein, obtaining the first projection line of the first sub-image along the fifth direction includes: obtaining the mth first projection line of any mth first sub-image along the fifth direction; wherein, obtaining the second projection line of the second sub-image along the sixth direction includes: obtaining the nth second projection line of any nth second sub-image along the sixth direction; wherein, the first first projection line to the Mth first projection line in the first line image are arranged at equal intervals, and the first second projection line to the Nth second projection line in the second line image are arranged at equal intervals; wherein, M is an integer greater than or equal to 2, m is an integer greater than or equal to 1 and less than or equal to M; N is an integer greater than or equal to 2, and n is an integer greater than or equal to 1 and less than or equal to N.

[0011] In some embodiments, the first image includes a first sub-image to an Mth first sub-image arranged sequentially at intervals along a third direction; wherein, obtaining a first anchor point for each first sub-image based on the center of the plurality of first sub-images in the first image includes: obtaining a first fitted line in the first image based on the center coordinates of the first first sub-image to the center coordinates of the Mth first sub-image, the first fitted line being parallel to the first quantum well baseline in the first image; obtaining the coordinate values ​​of the first anchor points of the first to Mth first sub-images along a third direction based on the coordinate values ​​of the center of the first first sub-image and the center of the Mth first sub-image along a third direction; and obtaining the coordinate values ​​of the first anchor points of the first to Mth first sub-images along a fifth direction based on the coordinate values ​​of the first anchor points of the first to Mth first sub-images along a third direction and the first fitted line.

[0012] In some embodiments, the second image includes a first to an Nth second sub-image arranged sequentially at intervals along a fourth direction; wherein obtaining a second anchor point for each second sub-image based on the center of the plurality of second sub-images in the second image includes: obtaining a second fitted line in the second image based on the center coordinates of the first to the Nth second sub-images, the second fitted line being parallel to the second quantum well baseline in the second image; obtaining the coordinates of the second anchor points of the first to the Nth second sub-images along the fourth direction based on the coordinates of the center of the first to the Nth second sub-images along the fourth direction and the coordinates of the center of the Nth second sub-image along the fourth direction; and obtaining the coordinates of the second anchor points of the first to the Nth second sub-images along a sixth direction based on the coordinates of the second anchor points of the first to the Nth second sub-images along the fourth direction and the second fitted line.

[0013] In some embodiments, obtaining the first line drawing includes: arranging a plurality of first projection lines at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing, wherein the line connecting the first anchor projection points of the plurality of first projection lines in the first initial line drawing is perpendicular to the first projection lines; performing a first processing on the first initial line drawing to obtain the first line drawing; wherein the first processing includes: obtaining a first reference line, the first reference line being parallel to the first projection lines and passing through the center of the first initial line drawing; and translating the first projection lines on both sides of the first reference line in opposite directions along a direction parallel to the first projection lines.

[0014] In some embodiments, obtaining the second line drawing includes: arranging a plurality of second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing, wherein the line connecting the second anchor projection points of the plurality of second projection lines in the second initial line drawing is perpendicular to the second projection lines; performing a second processing on the second initial line drawing to obtain the second line drawing; wherein the second processing includes: obtaining a second reference line, the second reference line being parallel to the second projection lines and passing through the center of the second initial line drawing; and translating the second projection lines on both sides of the second reference line in opposite directions along a direction parallel to the second projection lines.

[0015] In some embodiments, the first image includes a first sub-image to an Mth first sub-image arranged sequentially at intervals along a third direction; wherein, obtaining a first projection line of the first sub-image along a fifth direction includes: obtaining the mth first projection line of any mth first sub-image along the fifth direction; wherein, arranging a plurality of first projection lines at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing includes: arranging the first first projection line to the Mth first projection line at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing, where M is an integer greater than or equal to 2, and m is an integer greater than or equal to 1 and less than or equal to M; wherein, the distance from the first reference line to the first first projection line is equal to the distance from the first reference line to the Mth first projection line; wherein, translating the first projection lines on both sides of the first reference line in opposite directions along a direction parallel to the first projection line includes: the translation direction of the first projection line on one side of the first reference line is opposite to the translation direction of the first projection line on the other side of the first reference line.

[0016] In some embodiments, the second image includes a first to an Nth second sub-image arranged sequentially at intervals along a fourth direction; wherein, obtaining a second projection line of the second sub-image along a sixth direction includes: obtaining an nth second projection line of any nth second sub-image along the sixth direction; wherein, arranging a plurality of second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing includes: arranging the first to the Nth second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing, where N is an integer greater than or equal to 2, and n is an integer greater than or equal to 1 and less than or equal to N; wherein, the distance from the second reference line to the first second projection line is equal to the distance from the second reference line to the Nth second projection line; wherein, translating the second projection lines on both sides of the second reference line in opposite directions along a direction parallel to the second projection line includes: the translation direction of the second projection line on one side of the second reference line is opposite to the translation direction of the second projection line on the other side of the second reference line.

[0017] In some implementations, the angles at which the lines connecting the first anchor projection points of the first projection lines in different first line diagrams intersect the first projection lines are different; the angles at which the lines connecting the second anchor projection points of the second projection lines in different second line diagrams intersect the second projection lines are different; wherein, the three-dimensional reconstruction method further includes: comparing the similarity of any one of the multiple first contour closed diagrams and any one of the multiple second contour closed diagrams to obtain multiple similarity data; and using the maximum value of the multiple similarity data as the first upper limit.

[0018] In some embodiments, obtaining a first three-dimensional image based on a first sub-image and a first line drawing corresponding to a first feature contour image includes: arranging the first to Mth first sub-images sequentially and in parallel, with the line connecting the first anchor points of the first to Mth first sub-images parallel to the line connecting the first anchor projection points of the first projection lines in the first line drawing corresponding to the first feature contour image; wherein, obtaining a second three-dimensional image based on a second sub-image and a second line drawing corresponding to a second feature contour image includes: arranging the first to Nth second sub-images sequentially and in parallel, with the line connecting the second anchor points of the first to Nth second sub-images parallel to the line connecting the second anchor projection points of the second projection lines in the second line drawing corresponding to the second feature contour image.

[0019] In some embodiments, matching the first feature contour map and the second feature contour map to make the overlap area of ​​the first feature contour map and the second feature contour map reach a second upper limit value includes: performing a first matching process to a Q matching process on the first feature contour map and the second feature contour map, where any q-th matching process makes the first feature contour map and the second feature contour map have a q-th overlap area; obtaining the maximum value among the first overlap area to the Q-th overlap area as the second upper limit value; wherein Q is an integer greater than or equal to 2, and q is an integer greater than or equal to 1 and less than or equal to Q.

[0020] In some implementations, obtaining a test 3D image based on the relative position change, the first 3D image, and the second 3D image includes: changing the positions of the first 3D image and the second 3D image according to the relative position change, and then using the entire area of ​​the first 3D image and the second 3D image as the test 3D image.

[0021] This application also provides a fabrication method, comprising: obtaining a test three-dimensional image of the port to be tested using the three-dimensional reconstruction method based on multi-view cross-sectional images of this application; forming a device structure, the device structure comprising: a plurality of slots arranged in an array along a first direction and a second direction; and adjusting the process parameters for forming the slots according to the difference between the test three-dimensional image and the reference three-dimensional image.

[0022] The technical solution of this invention has the following beneficial effects:

[0023] The present invention provides a 3D reconstruction method based on multi-view cross-sectional images. It acquires a first image of a row of ports to be inspected cleaved by a first cleavage plane and a second image of a row of ports to be inspected cleaved by a second cleavage plane. Then, based on the first and second images, it acquires a first feature contour map and a second feature contour map. Matching processing of the first and second feature contour maps yields the relative position change. Based on the relative position change, the first 3D image, and the second 3D image, it acquires a test 3D image. The test 3D image represents the test pattern of the ports to be inspected. This 3D reconstruction method combines cleavage and image processing, enabling visualized monitoring of key areas of the structure under test, and accurately monitoring the shape and size of the ports to be inspected.

[0024] Secondly, it eliminates the need for complex sample preparation processes, simplifying the 3D reconstruction method. It also imposes fewer restrictions on the width dimensions of the measured structure after cleavage. Attached Figure Description

[0025] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0026] Figure 1 This is a flowchart illustrating a three-dimensional reconstruction method based on multi-view cross-sectional images according to an embodiment of this application;

[0027] Figure 2 This is a schematic diagram of the structure to be tested;

[0028] Figure 3 This is a schematic diagram of cleavage performed on the structure under test.

[0029] Figure 4 This is a schematic diagram of the first line drawing;

[0030] Figure 5 This is a schematic diagram of the second line drawing;

[0031] Figure 6 This is a schematic diagram of the first closed contour.

[0032] Figure 7 This is a schematic diagram of the second closed contour.

[0033] Figure 8 A schematic diagram for comparing the similarity between the first and second contour closed graphs;

[0034] Figure 9 A schematic diagram for testing 3D graphs

[0035] Figure 10 This is a schematic diagram of a scanning electron microscope for a port to be inspected.

[0036] Figure 11 A schematic diagram of a scanning electron microscope for another type of port to be tested;

[0037] Figure 12 A schematic diagram of a scanning electron microscope for another type of port to be tested;

[0038] Figure 13 This is a relative position diagram of the second test 3D plot and the first test 3D plot. Detailed Implementation

[0039] Device structures such as surface-emitting lasers (SELs) with air holes present numerous challenges in practical manufacturing due to the invisibility of these air holes in related processes and the lag in reconstruction methods. Specifically, many methods rely on complex structural designs and electrode layouts to improve modulation bandwidth. However, the inability to effectively monitor or reconstruct the air hole's contour leads to problems such as resonant cavity deviation, increased scattering loss, and reduced coupling efficiency, thus limiting the synergistic improvement of speed and efficiency. Especially during large-scale fabrication, micron-scale process variations in the air holes are difficult to detect or model, resulting in limited consistency among different SELs and consequently limiting the yield of SELs.

[0040] Based on this, this application proposes a three-dimensional reconstruction method and preparation method based on multi-view cross-sectional images. The three-dimensional reconstruction method can accurately monitor the morphology and size of the port to be inspected. This three-dimensional reconstruction method realizes the visual monitoring of key areas of the structure under test.

[0041] The 3D reconstruction method based on multi-view cross-sectional images provides a quantifiable feedback mechanism for the fabrication of device structures, thereby effectively improving the performance of the device structures.

[0042] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0043] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0044] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0045] One embodiment of the present invention provides a three-dimensional reconstruction method based on multi-view cross-sectional images, with reference to... Figure 1 ,include:

[0046] S1: Form a structure to be tested, which includes multiple test ports arranged in an array along the first and second directions;

[0047] S2: Obtain a first image of a row of ports to be tested that are cleaved by the first cleavage surface. The first image includes multiple first sub-images that are sequentially spaced along the third direction. Obtain a second image of a row of ports to be tested that are cleaved by the second cleavage surface. The second image includes multiple second sub-images that are sequentially spaced along the fourth direction. The second cleavage surface is perpendicular to the first cleavage surface.

[0048] S3: Obtain the first anchor point of each first sub-image based on the center of multiple first sub-images in the first image, and obtain the second anchor point of each second sub-image based on the center of multiple second sub-images in the second image;

[0049] S4: Obtain the first projection line of the first sub-image along the fifth direction, the fifth direction is parallel to the first sub-image and perpendicular to the third direction, and the projection of the first anchor point on the first projection line is the first anchor projection point; Obtain the second projection line of the second sub-image along the sixth direction, the sixth direction is parallel to the second sub-image and perpendicular to the fourth direction, and the projection of the second anchor point on the second projection line is the second anchor projection point.

[0050] S5: Obtain multiple first line diagrams and multiple second line diagrams; wherein, in the first line diagram, multiple first projection lines are arranged sequentially at equal intervals, and the line connecting the first anchor projection points of the multiple first projection lines is a straight line and intersects with the first projection line; in the second line diagram, multiple second projection lines are arranged sequentially at equal intervals, and the line connecting the second anchor projection points of the multiple second projection lines is a straight line and intersects with the second projection line, and the second projection line is perpendicular to the first projection line;

[0051] S6: Obtain the first closed contour diagram based on the first line drawing, and obtain the second closed contour diagram based on the second line drawing;

[0052] S7: When the similarity between the first closed contour map and the second closed contour map reaches the first upper limit value, the first closed contour map is used as the first feature contour map and the second closed contour map is used as the second feature contour map.

[0053] S8: Perform matching processing on the first feature contour map and the second feature contour map so that the overlap area of ​​the first feature contour map and the second feature contour map reaches the second upper limit value.

[0054] S9: Obtain the relative positional change of the first feature contour map and the second feature contour map after the matching process is performed, relative to the positional change before the matching process.

[0055] S10: Obtain a first 3D image based on the first sub-image and the first line drawing corresponding to the first feature contour image; obtain a second 3D image based on the second sub-image and the second line drawing corresponding to the second feature contour image; and

[0056] S11: Obtain a test 3D map based on the relative position change, the first 3D map, and the second 3D map.

[0057] In this embodiment, a first image of a row of ports to be tested cleaved by a first cleavage surface and a second image of a row of ports to be tested cleaved by a second cleavage surface are acquired. Then, a first feature contour map and a second feature contour map are acquired based on the first and second images. The relative position change is obtained through matching processing of the first and second feature contour maps. A test 3D map is then acquired based on the relative position change, the first 3D map, and the second 3D map. The test 3D map represents the test pattern of the ports to be tested. This 3D reconstruction method combines cleavage and image processing, enabling visualized monitoring of key areas of the structure under test, and accurately monitoring the shape and size of the ports to be tested.

[0058] The detection method in this embodiment realizes the structural reconstruction of the port to be detected.

[0059] Secondly, it eliminates the need for complex sample preparation processes, simplifying the 3D reconstruction method. It also imposes fewer restrictions on the width dimensions of the measured structure after cleavage.

[0060] In this embodiment, forming the structure to be tested includes: a reference Figure 2The test active layer 120 is formed; and a test photonic crystal layer 130 is formed on one side of the test active layer 120; wherein forming the test photonic crystal layer 130 includes: forming a first test semiconductor layer 1300, the first test semiconductor layer 1300 having a test groove; and forming a second test semiconductor layer 1302, the second test semiconductor layer 1302 being located on the inner wall of the test groove and on the side of the first test semiconductor layer 1300 away from the test active layer 120, the second test semiconductor layer 1302 having a detection hole 1303.

[0061] Wherein, the port to be tested is a test groove, or the port to be tested is a test hole 1303. In this embodiment, the port to be tested is a test hole 1303 as an example.

[0062] It should be noted that, in other embodiments, the detection port may not be limited to... Figure 2 The structure to be tested in the text.

[0063] refer to Figure 2 The formation of the structure under test further includes: forming a test carrier transport layer 110 on one side of the test semiconductor substrate 1000; wherein, forming the test active layer 120 includes: forming the test active layer 120 on the side of the test carrier transport layer 110 opposite to the test semiconductor substrate 1000. The formation of the structure under test further includes: forming a Bragg mirror (not shown) on the side of the second test semiconductor layer 1302 opposite to the test active layer 120.

[0064] The structure under test can be a semi-finished or finished structure of a photonic crystal surface-emitting semiconductor laser.

[0065] When the structure under test is a finished structure of a photonic crystal surface-emitting semiconductor laser, the formation of the structure under test also includes: forming a test Bragg mirror on the side of the photonic crystal layer 130 away from the test active layer 120.

[0066] It should be noted that the structure under test can also be other semiconductor structures, not limited to the semi-finished structure of a photonic crystal surface-emitting semiconductor laser or the finished structure of a photonic crystal surface-emitting semiconductor laser.

[0067] In this embodiment, reference Figure 3 The structure under test includes multiple test ports arranged in an array along the first direction X and the second direction Y, with test port 1303 as an example. The first direction X and the second direction Y intersect, for example, the first direction X and the second direction Y are perpendicular.

[0068] In this embodiment, reference Figure 3The detection method further includes: cleaving the structure 10 to be tested along the first cleavage plane 100 and the second cleavage plane 200, wherein the first cleavage plane 100 passes through a row of test ports along the first direction X, and the second cleavage plane 200 passes through a row of test ports along the second direction Y.

[0069] In this embodiment, the first cleavage surface 100 is not parallel to the first direction X; the second cleavage surface 200 is not parallel to the second direction Y. The first cleavage surface 100 and the first direction X have a first acute angle, which is 0.5 degrees to 2 degrees, for example, 0.5 degrees, 1 degree, 1.5 degrees, or 2 degrees. The second cleavage surface 200 and the second direction Y have a second acute angle, which is 0.5 degrees to 2 degrees, for example, 0.5 degrees, 1 degree, 1.5 degrees, or 2 degrees. In one embodiment, the first acute angle is equal to the second acute angle.

[0070] In one embodiment, during the cleaving of the structure under test 10 along the first cleaving surface 100, the first cleaving surface 100 cleaves the test semiconductor substrate layer 1000, the test photonic crystal layer 130, the carrier transport layer 110, and the test active layer 120. During the cleaving of the structure under test 10 along the second cleaving surface 200, the second cleaving surface 200 cleaves the test semiconductor substrate layer 1000, the test photonic crystal layer 130, the carrier transport layer 110, and the test active layer 120.

[0071] In one embodiment, the first cleavage surface 100 is perpendicular to the surface of the test semiconductor substrate 1000 facing the detection hole 1303, and the second cleavage surface 200 is perpendicular to the surface of the test semiconductor substrate 1000 facing the detection hole 1303.

[0072] In one embodiment, the process of cleaving the structure 10 under test along the first cleavage plane 100 includes a cutting process, such as a laser cutting process. The process of cleaving the structure 10 under test along the second cleavage plane 200 includes a cutting process, such as a laser cutting process.

[0073] After cleaving the structure 10 under test along the first cleavage plane 100, cleaving the structure 10 under test along the second cleavage plane 200 is performed. Alternatively, after cleaving the structure 10 under test along the second cleavage plane 200, cleaving the structure 10 under test along the first cleavage plane 100 is performed. Alternatively, during the cleaving process along the first cleavage plane 100, cleaving the structure 10 under test along the second cleavage plane 200 is performed.

[0074] In one embodiment, the first cleavage plane is perpendicular to the first crystal orientation of the second test semiconductor layer 1302, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer 1302. Alternatively, the first cleavage plane is perpendicular to the first crystal orientation of the first test semiconductor layer, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer.

[0075] In one embodiment, a scanning electron microscope is used to acquire a first image 300. During the acquisition of the first image 300, the probe surface of the scanning electron microscope is parallel to the first cleavage surface 100.

[0076] In one embodiment, a scanning electron microscope is used to acquire a second image 400, and during the acquisition of the second image 400, the probe surface of the scanning electron microscope is parallel to the second cleavage surface 200.

[0077] Scanning electron microscopy includes high-resolution field emission scanning electron microscopy (SEM).

[0078] In other embodiments, an image sensor can be used to acquire a first image 300, wherein the detection surface of the image sensor is parallel to the first cleavage surface 100 during the acquisition of the first image 300. An image sensor can also be used to acquire a second image 400, wherein the detection surface of the image sensor is parallel to the second cleavage surface 200 during the acquisition of the second image 400.

[0079] In one embodiment, reference Figure 3 The first image 300 includes a plurality of first sub-images 301 arranged at intervals along a third direction. Specifically, the first image 300 includes a first sub-image to the Mth first sub-image arranged at intervals along a third direction. The second image includes a plurality of second sub-images 401 arranged at intervals along a fourth direction. Specifically, the second image 400 includes a first second sub-image to the Nth second sub-image arranged at intervals along a fourth direction. Here, M is an integer greater than or equal to 2, and N is an integer greater than or equal to 2.

[0080] The first sub-image 301 is an image of a cross-section of the port to be detected divided by the first cleavage surface 100. One first sub-image 301 corresponds to one cross-section of the port to be detected divided by the first cleavage surface 100. The second sub-image 401 is an image of a cross-section of the port to be detected divided by the second cleavage surface 200. One second sub-image 401 corresponds to one cross-section of the port to be detected divided by the second cleavage surface 200.

[0081] In one embodiment, obtaining the first anchor point of each first sub-image 301 based on the center of a plurality of first sub-images in the first image 300 includes: obtaining a first fitted line in the first image 300 according to the center coordinates of the first first sub-image to the center coordinates of the Mth first sub-image, the first fitted line being parallel to the first quantum well baseline in the first image 300; obtaining the coordinate values ​​of the first anchor point of the first sub-image to the Mth first sub-image along a third direction according to the coordinate values ​​of the center of the first first sub-image along a third direction and the coordinate values ​​of the center of the Mth first sub-image along a third direction; and obtaining the coordinate values ​​of the first anchor point of the first sub-image to the Mth first sub-image along a fifth direction according to the coordinate values ​​of the first anchor point of the first sub-image to the Mth first sub-image along a third direction and the first fitted line.

[0082] For example, in the first image 300, the center coordinates of the first sub-image and the center coordinates of the Mth sub-image are approximately on a straight line. A first fitted straight line needs to be obtained based on these coordinates. The center coordinates of the first sub-image include the coordinates along a third direction and a fifth direction. The center coordinates of the Mth sub-image also include the coordinates along a third direction and a fifth direction. The coordinates of the center of the first sub-image along a third direction can be used as the coordinates of the first anchor point along a third direction. Similarly, the coordinates of the center of the Mth sub-image along a third direction can be used as the coordinates of the first anchor point along a third direction. The formula is: (Coordinates of the center of the Mth sub-image along a third direction - Coordinates of the first anchor point of the first sub-image along a third direction) / M - 1 = ma, where ma is the distance along a third direction between the first anchor points of adjacent sub-images in the first image 300. Substitute the coordinates of the first anchor points from the first sub-image to the Mth sub-image along the third direction into the first fitted straight line to obtain the coordinates of the first anchor points from the first sub-image to the Mth sub-image along the fifth direction.

[0083] In one embodiment, obtaining a second anchor point for each second sub-image 401 based on the center of a plurality of second sub-images 401 in the second image 400 includes: obtaining a second fitted line in the second image 400 based on the center coordinates of the first second sub-image to the center coordinates of the Nth second sub-image, the second fitted line being parallel to the second quantum well baseline in the second image 400; obtaining the coordinates of the second anchor points of the first second sub-image to the Nth second sub-image along the fourth direction based on the coordinates of the center of the first second sub-image and the center of the Nth second sub-image along the fourth direction; and obtaining the coordinates of the second anchor points of the first second sub-image to the Nth second sub-image along the sixth direction based on the coordinates of the second anchor points of the first second sub-image to the Nth second sub-image along the fourth direction and the second fitted line.

[0084] The baseline of the first quantum well in the first image is the center line of the active layer 120 in the image of the active layer in the first image.

[0085] The baseline of the second quantum well in the second image is the center line of the active layer 120 in the image of the active layer in the second image.

[0086] In one embodiment, obtaining the first projection line of the first sub-image 301 along the fifth direction includes: obtaining the m-th first projection line of any m-th first sub-image along the fifth direction. m is an integer greater than or equal to 1 and less than or equal to M.

[0087] In one embodiment, obtaining the second projection line of the second sub-image 401 along the sixth direction includes: obtaining the nth second projection line of any nth second sub-image along the sixth direction. n is an integer greater than or equal to 1 and less than or equal to N.

[0088] In one embodiment, obtaining a first line drawing includes: arranging a plurality of first projection lines at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing, wherein the line connecting the first anchor projection points of the plurality of first projection lines in the first initial line drawing is perpendicular to the first projection lines; and performing a first processing on the first initial line drawing to obtain the first line drawing (see reference). Figure 4 ).

[0089] In one embodiment, it may be: arranging the first sub-image to the Mth sub-image sequentially and in parallel, with the line connecting the first anchor points of the first sub-image to the Mth sub-image perpendicular to any one of the sub-images; then, obtaining the first projection lines of the first sub-image to the Mth sub-image along the fifth direction, with multiple first projection lines constituting a first initial line drawing.

[0090] In one embodiment, when the line connecting the first anchor point of the first sub-image to the Mth first sub-image is perpendicular to any one of the first sub-images, each first sub-image has multiple vertices, and each first sub-image includes multiple first triangles. The vertices of the first triangles are the vertices of the first sub-images, and the average coordinate of the i-th first triangle is... , Let be the mean of the coordinates of the i-th first triangle. Let be the coordinates of the first vertex of the i-th first triangle. Let be the coordinates of the second vertex of the i-th first triangle. Let be the coordinates of the third vertex of the i-th first triangle. There are a total of L1 first triangles from the first to the M-th first sub-image, where i is an integer greater than or equal to 1 and less than or equal to L1. If the first triangle of the i'+1th term and the first triangle of the i'th term are coplanar, δ1 is the first threshold, and i' is an integer greater than or equal to 1 and less than or equal to L1-1.

[0091] In one embodiment, the first process includes: acquiring a first baseline, the first baseline being parallel to a first projection line and passing through the center of a first initial line drawing; and translating the first projection lines on both sides of the first baseline in opposite directions along a direction parallel to the first projection line.

[0092] In one embodiment, arranging a plurality of first projection lines at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing includes: arranging the first first projection line to the Mth first projection line at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing. The distance from the first reference line to the first first projection line is equal to the distance from the first reference line to the Mth first projection line.

[0093] Specifically, when M is an even number, the first reference line is located between the M / 2th first projection line and the ((M / 2)+1)th first projection line, and the distance between the first reference line and the M / 2th first projection line is equal to the distance between the first reference line and the ((M / 2)+1)th first projection line. When M is an odd number, the first reference line coincides with the (M+1) / 2th first projection line.

[0094] In one embodiment, the first projection lines on both sides of the first reference line are translated in opposite directions along a direction parallel to the first projection line, including: the translation direction of the first projection line on one side of the first reference line is opposite to the translation direction of the first projection line on the other side of the first reference line.

[0095] When M is even, the first projection line to the M / 2th projection line is translated in a direction parallel to the first projection line, and the ((M / 2)+1)th projection line to the Mth projection line is translated in a direction parallel to the first projection line. The translation direction of the first projection line to the M / 2th projection line is opposite to the translation direction of the ((M / 2)+1)th projection line to the Mth projection line. The translation amount of the first projection line to the M / 2th projection line decreases linearly. Specifically, the translation amount of the ((M / 2)+1)th projection line to the Mth projection line increases linearly. The step size for linearly decreasing translation of the first first projection line to the M / 2th first projection line is equal to the step size for linearly increasing translation of the ((M / 2)+1)th first projection line to the Mth first projection line.

[0096] When M is odd, the first first projection line to the ((M+1) / 2)-1th first projection line is translated in a direction parallel to the first projection line, and the ((M+1) / 2)+1th first projection line to the Mth first projection line is translated in a direction parallel to the first projection line. The translation direction from the first first projection line to the ((M+1) / 2)-1th first projection line is opposite to the translation direction from the ((M+1) / 2)+1th first projection line to the Mth first projection line. The translation amount from the first first projection line to the ((M+1) / 2)-1th first projection line decreases, specifically, the translation amount from the first first projection line to the ((M+1) / 2)-1th first projection line decreases linearly. The translation amount from the ((M+1) / 2)+1th to the Mth first projection line increases incrementally. Specifically, the translation amount from the ((M+1) / 2)+1th to the Mth first projection line increases linearly. The step size for the linear decrease of the translation amount from the first first projection line to the ((M+1) / 2)-1th first projection line is equal to the step size for the linear increase of the translation amount from the ((M+1) / 2)+1th to the Mth first projection line. When M is odd, the position of the ((M+1) / 2)th first projection line in the first initial line diagram is the same as the position of the ((M+1) / 2)th first projection line in the first line diagram. That is, the first processing does not change the position of the ((M+1) / 2)th first projection line.

[0097] In the first line drawing, the first projection line to the Mth projection line are arranged at equal intervals.

[0098] In one embodiment, obtaining the second line drawing includes: arranging a plurality of second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing, wherein the line connecting the second anchor projection points of the plurality of second projection lines in the second initial line drawing is perpendicular to the second projection lines; and performing a second processing on the second initial line drawing to obtain the second line drawing (see reference). Figure 5 ).

[0099] In one embodiment, the process may involve: arranging the first second sub-image to the Nth second sub-image sequentially and in parallel, with the line connecting the second anchor points of the first second sub-image to the Nth second sub-image perpendicular to any one of the second sub-images; then, obtaining the second projection lines of the first second sub-image to the Nth second sub-image along the sixth direction, with the multiple second projection lines constituting a second initial line drawing.

[0100] In one embodiment, when the line connecting the second anchor points of the first second sub-image to the Nth second sub-image is perpendicular to any second sub-image, each second sub-image has multiple vertices, and each second sub-image includes multiple second triangles. The vertices of the second triangles are the vertices of the second sub-images, and the average coordinates of the j-th second triangle are... , Let the mean of the coordinates of the j-th second triangle be . Let J be the coordinates of the first vertex of the j-th second triangle. Let be the coordinates of the second vertex of the j-th second triangle. Let be the coordinates of the third vertex of the j-th second triangle. There are a total of L2 second triangles from the first to the Nth second sub-image, where j is an integer greater than or equal to 1 and less than or equal to L2. If the j'+1th second triangle and the j'th second triangle are coplanar, δ2 is the second threshold, and j' is an integer greater than or equal to 1 and less than or equal to L2-1.

[0101] In one embodiment, the second process includes: acquiring a second reference line, the second reference line being parallel to the second projection line and passing through the center of the second initial line drawing; and translating the second projection lines on both sides of the second reference line in opposite directions along a direction parallel to the second projection line.

[0102] In one embodiment, arranging a plurality of second projection lines sequentially along a direction perpendicular to the second projection lines to obtain a second initial line drawing includes: arranging the first to Nth second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing. The distance from the second reference line to the first second projection line is equal to the distance from the second reference line to the Nth second projection line.

[0103] Specifically, when N is even, the second reference line is located between the N / 2th second projection line and the ((N / 2)+1)th second projection line, and the distance between the second reference line and the N / 2th second projection line is equal to the distance between the first reference line and the ((N / 2)+1)th second projection line. When N is odd, the second reference line coincides with the (N+1) / 2th second projection line.

[0104] In one embodiment, the second projection lines on both sides of the second reference line are translated in opposite directions along a direction parallel to the second projection line, including: the translation direction of the second projection line on one side of the second reference line is opposite to the translation direction of the second projection line on the other side of the second reference line.

[0105] When N is even, the first to the N / 2th second projection lines are translated in a direction parallel to the second projection lines, and the (N / 2+1)th to the Nth second projection lines are translated in a direction parallel to the second projection lines. The translation direction for the first to the N / 2th second projection lines is opposite to that for the (N / 2+1)th to the Nth second projection lines. The translation amount for the first to the N / 2th second projection lines decreases linearly. The translation amount for the (N / 2+1)th to the Nth second projection lines increases linearly. The step size for linearly decreasing translations from the first second projection line to the N / 2th second projection line is equal to the step size for linearly increasing translations from the ((N / 2)+1)th second projection line to the Nth second projection line.

[0106] When N is odd, the first second projection line to the ((N+1) / 2)-1th second projection line is translated in a direction parallel to the second projection lines. The ((N+1) / 2)+1th second projection line to the Nth second projection line is also translated in a direction parallel to the second projection lines. The translation direction from the first second projection line to the ((N+1) / 2)-1th second projection line is opposite to the translation direction from the ((N+1) / 2)+1th second projection line to the Nth second projection line. The translation amount from the first second projection line to the ((N+1) / 2)-1th second projection line decreases, specifically, the translation amount from the first second projection line to the ((N+1) / 2)-1th second projection line decreases linearly. The translation amount from the (N+1) / 2+1th second projection line to the Nth second projection line increases incrementally. Specifically, the translation amount from the (N+1) / 2+1th second projection line to the Nth second projection line increases linearly. The step size for the linear decrease of the translation amount from the first second projection line to the (N+1) / 2-1th second projection line is equal to the step size for the linear increase of the translation amount from the (N+1) / 2+1th second projection line to the Nth second projection line. When N is odd, the position of the (N+1) / 2th second projection line in the second initial line diagram is the same as the position of the (N+1) / 2th second projection line in the second line diagram. That is to say, the second processing does not change the position of the (N+1) / 2th second projection line.

[0107] The first second projection line to the Nth second projection line in the second line diagram are arranged at equal intervals.

[0108] In one embodiment, the angle at which the line connecting the first anchor projection points of the first projection line intersects the first projection line is different in different first line drawings. Specifically, the first initial line drawing is subjected to multiple first processes, with a different translation step size in each first process. Each first process on the first initial line drawing yields a first line drawing, and the outer contour graphics of different first line drawings are different.

[0109] In one embodiment, the angle at which the line connecting the second anchor projection points of the second projection line intersects the second projection line is different in different second line diagrams. Specifically, the second initial line diagram is subjected to multiple second processing steps, with a different translation step size for each second processing step. Each second processing step on the second initial line diagram yields a second line diagram, and the outer contour graphics of different second line diagrams are different.

[0110] A second line drawing corresponds to a first contour closed drawing. Figure 6 A second line drawing corresponds to a second closed contour drawing. Figure 7 ).

[0111] In one embodiment, the 3D reconstruction method further includes: a reference Figure 8 The similarity of any one of the multiple first contour closed maps and any one of the multiple second contour closed maps is compared to obtain multiple similarity data; the maximum value of the multiple similarity data is used as the first upper limit.

[0112] In one embodiment, matching the first feature contour map and the second feature contour map to make the overlap area of ​​the first feature contour map and the second feature contour map reach a second upper limit value includes: performing a first matching process to a Q matching process on the first feature contour map and the second feature contour map, where any q-th matching process makes the first feature contour map and the second feature contour map have a q-th overlap area; obtaining the maximum value among the first overlap area to the Q-th overlap area as the second upper limit value; wherein Q is an integer greater than or equal to 2, and q is an integer greater than or equal to 1 and less than or equal to Q.

[0113] In one embodiment, obtaining a first 3D image based on a first sub-image and a first line drawing corresponding to a first feature contour image includes: arranging the first to Mth first sub-images sequentially and parallel to each other, wherein the line connecting the first anchor points of the first to Mth first sub-images is parallel to the line connecting the first anchor projection points of the first projection lines in the first line drawing corresponding to the first feature contour image. The spacing between adjacent first projection lines in the first line drawing corresponding to the first feature contour image is equal to the spacing between adjacent first sub-images in the first 3D image.

[0114] In one embodiment, obtaining a second three-dimensional image based on a second sub-image and a second line drawing corresponding to a second feature contour image includes: arranging the first to Nth second sub-images sequentially and parallel to each other, such that the line connecting the second anchor points of the first to Nth second sub-images is parallel to the line connecting the second anchor projection points of the second projection lines in the second line drawing corresponding to the second feature contour image. The spacing between adjacent second projection lines in the second line drawing corresponding to the second feature contour image is equal to the spacing between adjacent second sub-images in the second three-dimensional image.

[0115] In one embodiment, obtaining a test 3D image based on the relative position change, the first 3D image, and the second 3D image includes: changing the positions of the first 3D image and the second 3D image according to the relative position change, and then using the entire area of ​​the first 3D image and the second 3D image as the test 3D image (see reference). Figure 9 ).

[0116] refer to Figure 10 The port to be tested is the test hole A3, which can acquire the first sub-image and the second sub-image of the port to be tested after the formation of the second test semiconductor layer and before the formation of the Bragg reflector.

[0117] refer to Figure 11 and Figure 12 The port to be tested is detection hole A4. A first sub-image and a second sub-image of the port to be tested can be obtained after the Bragg reflector is formed. In this application, a first test three-dimensional image (A2) of the test groove is obtained using the detection method of the above embodiment, and a second test three-dimensional image (A1) of the detection hole is obtained using the detection method of the above embodiment. A relative position diagram of the second test three-dimensional image and the first test three-dimensional image is obtained (see reference). Figure 13 ).

[0118] In this application, the growth rate of the second test semiconductor layer can be obtained based on the relative position diagram of the second test 3D image and the first test 3D image. For example, the growth rate of the second test semiconductor layer in different directions can be obtained based on the relative position diagram of the second test 3D image and the first test 3D image.

[0119] Another embodiment of this application also provides a preparation method, including: obtaining a test three-dimensional image of the port to be tested using the detection method of the above embodiments of this application; forming a device structure, the device structure including: a plurality of slots arranged in an array along a first direction and a second direction; and adjusting the process parameters for forming the slots according to the difference between the test three-dimensional image and the reference three-dimensional image.

[0120] The groove is a hole, or the groove is a recess.

[0121] The detection method provides a quantifiable feedback mechanism for the fabrication of device structures, thereby effectively improving the performance of the device structures.

[0122] By inversely correlating the reconstructed 3D test image of the port under test with the process parameters of the hole, a closed-loop optimization system of process-device structure-performance can be constructed, which can significantly improve the speed, efficiency and process consistency of the device structure and help realize low-cost, high-performance and green manufacturing chip solutions.

[0123] This embodiment provides a process-adaptive path centered on "real structure identification - error correction - process feedback", which can significantly reduce the device structure development cycle and iteration cost, and help achieve a leap in device structure performance without increasing additional manufacturing complexity.

[0124] Obviously, the above embodiments are merely illustrative examples for clear explanation and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all possible implementations here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A three-dimensional reconstruction method based on multi-view cross-sectional images, characterized in that, include: A structure to be tested is formed, which includes multiple test ports arranged in an array along a first direction and a second direction; A first image of a row of ports to be tested cleaved by a first cleavage surface is obtained, the first image including multiple first sub-images arranged at intervals along a third direction; a second image of a row of ports to be tested cleaved by a second cleavage surface is obtained, the second image including multiple second sub-images arranged at intervals along a fourth direction; the second cleavage surface is perpendicular to the first cleavage surface; The first anchor point of each first sub-image is obtained based on the center of multiple first sub-images in the first image, and the second anchor point of each second sub-image is obtained based on the center of multiple second sub-images in the second image; Obtain a first projection line of the first sub-image along the fifth direction, the fifth direction being parallel to the first sub-image and perpendicular to the third direction, and the projection of the first anchor point onto the first projection line is the first anchor projection point; obtain a second projection line of the second sub-image along the sixth direction, the sixth direction being parallel to the second sub-image and perpendicular to the fourth direction, and the projection of the second anchor point onto the second projection line is the second anchor projection point. Obtain multiple first line diagrams and multiple second line diagrams; wherein, in the first line diagram, multiple first projection lines are arranged sequentially at equal intervals, and the line connecting the first anchor projection points of the multiple first projection lines is a straight line that intersects with the first projection line; in the second line diagram, multiple second projection lines are arranged sequentially at equal intervals, and the line connecting the second anchor projection points of the multiple second projection lines is a straight line that intersects with the second projection line, and the second projection line is perpendicular to the first projection line; Obtain the first closed contour diagram based on the first line drawing, and obtain the second closed contour diagram based on the second line drawing; When the similarity between the first closed contour map and the second closed contour map reaches the first upper limit value, the first closed contour map is used as the first feature contour map and the second closed contour map is used as the second feature contour map. The first feature contour map and the second feature contour map are matched to make the overlap area of ​​the first feature contour map and the second feature contour map reach the second upper limit value. Obtain the relative positional changes of the first feature contour map and the second feature contour map after the matching process, relative to the original position before the matching process. A first 3D image is obtained based on a first sub-image and a first line drawing corresponding to a first feature contour image; a second 3D image is obtained based on a second sub-image and a second line drawing corresponding to a second feature contour image; and The test 3D image is obtained based on the relative position change, the first 3D image, and the second 3D image.

2. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The first cleavage plane is not parallel to the first direction; the second cleavage plane is not parallel to the second direction.

3. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The structure to be tested is formed by: Forming a test active layer; and A test photonic crystal layer is formed on one side of the test active layer; The formation of the test photonic crystal layer includes: A first test semiconductor layer is formed, wherein the first test semiconductor layer has a test groove; and A second test semiconductor layer is formed, which is located on the inner wall of the test groove and on the side of the first test semiconductor layer away from the test active layer. The second test semiconductor layer has a detection hole. Wherein, the port to be tested is the test groove, or the port to be tested is the test hole.

4. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 3, characterized in that, The first cleavage plane is perpendicular to the first crystal orientation of the second test semiconductor layer, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer; Alternatively, the first cleavage plane is perpendicular to the first crystal orientation of the first test semiconductor layer, and the second cleavage plane is perpendicular to the second crystal orientation of the second test semiconductor layer.

5. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The first image is acquired using a scanning electron microscope, and during the acquisition of the first image, the probe surface of the scanning electron microscope is parallel to the first cleavage surface; The second image is acquired using a scanning electron microscope, with the probe plane of the scanning electron microscope parallel to the second cleavage plane during the acquisition process.

6. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The first image includes a first sub-image to the Mth first sub-image arranged sequentially at intervals along a third direction; the second image includes a first second sub-image to the Nth second sub-image arranged sequentially at intervals along a fourth direction; The step of obtaining the first projection line of the first sub-image along the fifth direction includes: obtaining the m-th first projection line of any m-th first sub-image along the fifth direction; The step of obtaining the second projection line of the second sub-image along the sixth direction includes: obtaining the nth second projection line of any nth second sub-image along the sixth direction; In the first line diagram, the first first projection line to the Mth first projection line are arranged at equal intervals in sequence, and in the second line diagram, the first second projection line to the Nth second projection line are arranged at equal intervals in sequence. Where M is an integer greater than or equal to 2, m is an integer greater than or equal to 1 and less than or equal to M; N is an integer greater than or equal to 2, and n is an integer greater than or equal to 1 and less than or equal to N.

7. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The first image includes the first sub-image to the Mth first sub-image arranged sequentially at intervals along a third direction; The first anchor point of each first sub-image is obtained based on the center of multiple first sub-images in the first image, including: In the first image, a first fitting line is obtained based on the center coordinates of the first first sub-image to the center coordinates of the Mth first sub-image. The first fitting line is parallel to the first quantum well baseline in the first image. Based on the coordinates of the center of the first sub-image along the third direction and the coordinates of the center of the Mth sub-image along the third direction, obtain the coordinates of the first anchor point from the first sub-image to the Mth sub-image along the third direction. Based on the coordinates of the first anchor points of the first sub-images to the Mth sub-images along the third direction and the first fitted straight line, obtain the coordinates of the first anchor points of the first sub-images to the Mth sub-images along the fifth direction.

8. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The second image includes a first to an Nth second sub-image arranged sequentially at intervals along a fourth direction; wherein, obtaining the second anchor point of each second sub-image based on the center of the multiple second sub-images in the second image includes: In the second image, a second fitted line is obtained based on the center coordinates of the first second sub-image to the center coordinates of the Nth second sub-image. The second fitted line is parallel to the second quantum well baseline in the second image. Based on the coordinates of the center of the first second sub-image along the fourth direction and the coordinates of the center of the Nth second sub-image along the fourth direction, obtain the coordinates of the second anchor points from the first second sub-image to the Nth second sub-image along the fourth direction; Based on the coordinates of the second anchor points of the first second sub-image to the Nth second sub-image along the fourth direction and the second fitted straight line, obtain the coordinates of the second anchor points of the first second sub-image to the Nth second sub-image along the sixth direction.

9. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, Obtaining the first line drawing includes: Multiple first projection lines are arranged at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing. The line connecting the first anchor projection points of the multiple first projection lines in the first initial line drawing is perpendicular to the first projection lines. The first initial line drawing is processed to obtain the first line drawing; The first process includes: acquiring a first baseline, which is parallel to the first projection line and passes through the center of the first initial line drawing; and translating the first projection lines on both sides of the first baseline in opposite directions along a direction parallel to the first projection line.

10. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, Obtaining the second line drawing includes: Multiple second projection lines are arranged at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing. The line connecting the second anchor projection points of the multiple second projection lines in the second initial line drawing is perpendicular to the second projection lines. The second initial line drawing is processed to obtain the second line drawing; The second process includes: obtaining a second baseline, which is parallel to the second projection line and passes through the center of the second initial line drawing; and translating the second projection lines on both sides of the second baseline in opposite directions along a direction parallel to the second projection line.

11. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 9, characterized in that, The first image includes the first sub-image to the Mth first sub-image arranged sequentially at intervals along a third direction; The step of obtaining the first projection line of the first sub-image along the fifth direction includes: obtaining the m-th first projection line of any m-th first sub-image along the fifth direction; The method of arranging multiple first projection lines at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing includes: arranging the first first projection line to the Mth first projection line at equal intervals along a direction perpendicular to the first projection lines to obtain a first initial line drawing, where M is an integer greater than or equal to 2 and m is an integer greater than or equal to 1 and less than or equal to M. Wherein, the distance from the first baseline to the first first projection line is equal to the distance from the first baseline to the Mth first projection line; Specifically, the translation of the first projection lines on both sides of the first reference line in opposite directions along a direction parallel to the first projection line includes: the translation direction of the first projection line on one side of the first reference line is opposite to the translation direction of the first projection line on the other side of the first reference line.

12. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 10, characterized in that, The second image includes the first to the Nth second sub-images arranged sequentially at intervals along the fourth direction; The step of obtaining the second projection line of the second sub-image along the sixth direction includes: obtaining the nth second projection line of any nth second sub-image along the sixth direction; The process of arranging multiple second projection lines at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing includes: arranging the first second projection line to the Nth second projection line at equal intervals along a direction perpendicular to the second projection lines to obtain a second initial line drawing, where N is an integer greater than or equal to 2, and n is an integer greater than or equal to 1 and less than or equal to N. Wherein, the distance from the second baseline to the first second projection line is equal to the distance from the second baseline to the Nth second projection line; Specifically, the second projection lines on both sides of the second reference line are translated in opposite directions along a direction parallel to the second projection line, including: the translation direction of the second projection line on one side of the second reference line is opposite to the translation direction of the second projection line on the other side of the second reference line.

13. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The angle at which the line connecting the first anchor projection point of the first projection line intersects the first projection line is different in different first line diagrams; the angle at which the line connecting the second anchor projection point of the second projection line intersects the second projection line is different in different second line diagrams. The three-dimensional reconstruction method further includes: comparing the similarity of any one of the multiple first contour closed images and any one of the multiple second contour closed images to obtain multiple similarity data; and using the maximum value of the multiple similarity data as the first upper limit.

14. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 6, characterized in that, The first 3D image is obtained based on the first sub-image and the first line drawing corresponding to the first feature contour image, including: The first sub-image to the Mth sub-image are arranged sequentially and set in parallel, and the line connecting the first anchor point of the first sub-image to the Mth sub-image is parallel to the line connecting the first anchor projection point of the first projection line in the first line diagram corresponding to the first feature contour map. The process of obtaining the second 3D image based on the second sub-image and the second line drawing corresponding to the second feature contour image includes: The first second sub-image to the Nth second sub-image are arranged sequentially and parallel to each other, and the line connecting the second anchor points of the first second sub-image to the Nth second sub-image is parallel to the line connecting the second anchor projection points of the second projection line in the second line diagram corresponding to the second feature contour map.

15. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, The first feature contour map and the second feature contour map are matched to make the overlap area of ​​the first feature contour map and the second feature contour map reach a second upper limit value, including: Perform first matching processing to Q matching processing on the first feature contour map and the second feature contour map, and any q-th matching processing makes the first feature contour map and the second feature contour map have a q-th overlapping area. The maximum value among the first overlapping area to the Qth overlapping area is taken as the second upper limit value; Where Q is an integer greater than or equal to 2, and q is an integer greater than or equal to 1 and less than or equal to Q.

16. The three-dimensional reconstruction method based on multi-view cross-sectional images according to claim 1, characterized in that, Obtaining a test 3D image based on the relative position change, the first 3D image, and the second 3D image includes: changing the positions of the first 3D image and the second 3D image according to the relative position change, and then using the entire area of ​​the first 3D image and the second 3D image as the test 3D image.

17. A preparation method, characterized in that, include: The test three-dimensional image of the port to be detected is obtained by the three-dimensional reconstruction method based on multi-view cross-sectional images as described in any one of claims 1 to 16; A device structure is formed, the device structure comprising: a plurality of slots arranged in an array along a first direction and a second direction; The process parameters for forming the slot are adjusted based on the differences between the test 3D plot and the reference 3D plot.

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