Polishing pad and polishing method for semiconductor wafer

Abstract

Provided are a highly practical polishing pad and a polishing method with which stable polishing can be achieved during polishing of a semiconductor wafer. Provided is a polishing pad (18) in which the content of hydrogen atoms in the resin is MH (mass%), the content of carbon atoms is MC (mass%), the content of oxygen atoms is MO (mass%), the content of nitrogen atoms is MN (mass%), the content of sulfur is MS (mass%), and the content of fluorine atoms is MF (mass%). The polishing solution has a polishing rate contribution PRN represented by formula (1), and the polishing rate contribution PRN satisfies formula (2). PRNs =-5738 MH + 849.6 MC + 1766MO-40.7 MN-394.9 MS + 219.4 MF... (1), and PRNs =-5738 MH + 849.6 MC + 1766MO-40.7 MN- And 268.4 < = PAN < = 1516.3... (2).

Description

Technical Field

[0001] This invention relates to polishing pads and polishing methods for semiconductor wafers, particularly difficult-to-polish wafers such as SiC, GaN, and InP. Background Technology

[0002] Semiconductor wafers such as SiC wafers, GaN wafers, Si wafers, and Si oxide film wafers are known to be difficult to polish. When polishing such semiconductor wafers, it is conventional to use a resin polishing pad with abrasive grains fixed on it on a polishing disc. For example, the CMP (Chemical Mechanical Polishing) method described in Patent Document 1 is such a method. In polishing using such abrasive grains, foreign matter in the polishing slurry is typically removed by passing it through a foreign matter removal filter during circulation, and the polishing slurry after foreign matter removal is then fed back to the polishing disc.

[0003] In conventional polishing methods, if a filter with a very fine mesh is used to remove abrasive particles from the polishing slurry, it will become clogged and unusable. If a filter with a slightly larger mesh is used instead, the removal capacity of the filter is insufficient, and sometimes scratches are caused on the polishing surface of the semiconductor wafer due to abrasive particles remaining in the polishing slurry. In addition, the abrasive particles in the polishing slurry have a higher specific gravity than the dispersion liquid, and they tend to settle and aggregate in storage tanks and delivery pipelines. Therefore, when the aggregated abrasive particles flow on the polishing pad, the abrasive particles tend to become unevenly dispersed on the polishing pad, sometimes resulting in uneven polishing on the polishing surface of the wafer.

[0004] In response, methods have been proposed that use resin-based abrasive pads and chemical solutions for abrasion. For example, the abrasion method described in Patent Document 2 is such a method.

[0005] Prior art literature

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 2013-214784

[0008] Patent Document 2: Japanese Patent Application Publication No. 2021-057368 Summary of the Invention

[0009] However, depending on the type of resin that makes up the abrasive pad, the abrasive rate will vary, so stable abrasiveness may not be achieved, which may result in a lack of practicality.

[0010] The present invention was made in light of the aforementioned circumstances, and its object is to provide a polishing pad and polishing method for semiconductor wafers that can stably polish semiconductor wafers using resin polishing pads and chemical solutions.

[0011] Against this background, the inventors conducted various studies on which resin composition is effective in improving the polishing rate of semiconductor wafers. First, using a resin composed of any of the elements carbon, hydrogen, oxygen, nitrogen, sulfur, and fluorine as a resin plate (polishing platform), polishing experiments were conducted on difficult-to-polish wafers such as SiC and GaN while supplying potassium permanganate (KMnO4) solution as a strong oxidant, and regression analysis was performed to determine the contribution of each element to the polishing rate. The results showed that oxygen, carbon, and fluorine tend to increase the polishing rate, while nitrogen, sulfur, and hydrogen tend to decrease the polishing rate. Moreover, it was found that the sum of the values ​​obtained by multiplying the content of each element by the coefficients of the regression analysis is used as the polishing rate contribution number (Equation (1) described later). If a resin with a composition ratio of carbon, hydrogen, oxygen, nitrogen, sulfur, and fluorine that satisfies the polishing rate contribution number expressed by Equation (1) described later is used, a high polishing rate can be obtained. Furthermore, it was discovered that using an abrasive-encapsulated abrasive pad made of this resin further increases the grinding rate. This invention is based on this insight.

[0012] That is, the essence of the polishing pad for semiconductor wafers of the present invention is that it is a resin-based polishing pad used to polish semiconductor wafers using a polishing slurry, wherein the polishing slurry is an aqueous solution of a strong oxidizing agent without abrasive particles, and the polishing pad is a polymer containing carbon (C) and at least one selected from hydrogen (H), oxygen (O), nitrogen (N), sulfur (S) and fluorine (F), wherein the hydrogen content is denoted as M. H (mass%), the carbon content is denoted as M. C (mass%), the oxygen content is denoted as M. O (mass%), the nitrogen content is denoted as M. N (mass%), the sulfur content is denoted as M. S (mass%), the fluorine content is denoted as M. F When (mass%), it has a grinding rate contribution number PRN expressed by equation (1), and the grinding rate contribution number PRN satisfies equation (2).

[0013] PRN = -5738M H +849.6M C +1766M O -40.7M N -394.9M S +219.4M F ...(1)268.4≤PRN≤1516.3…(2)

[0014] Furthermore, the main point of the semiconductor wafer polishing method of the present invention is that it is a method for polishing semiconductor wafers using polishing slurry and resin-based polishing pads. The polishing slurry is an aqueous solution of a strong oxidizing agent without abrasive particles, and the polishing pad is composed of a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine, wherein the hydrogen atom content is denoted as M. H (mass%), the percentage of carbon atoms contained therein is denoted as M. C (mass%), the percentage of oxygen atoms is denoted as M. O (mass%), the content of the nitrogen atoms is denoted as M. N (mass%), the sulfur content is denoted as M. S (mass%), the percentage of fluorine atoms is denoted as M. F At (mass%), it has a grinding rate contribution number PRN expressed by equation (1), which satisfies equation (2).

[0015] According to the polishing pad and polishing method for semiconductor wafers of the present invention, since a polishing slurry is used that is an aqueous solution of a strong oxidant without abrasive particles, a fine-mesh filter can be used along the circulation path of the polishing slurry, thereby significantly reducing the generation of scratches. Regarding the polishing of semiconductor wafers, stable polishing can be achieved, and the consumption of abrasive particles is suppressed, thus reducing environmental impact. Furthermore, the resin-based polishing pad is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine, and the polishing rate contribution number (PRN) of the polishing pad is 268.4 or higher and 1516.3 or lower, thus significantly improving the polishing rate.

[0016] Preferably, the grinding rate contribution number (PRN) of the grinding pad satisfies equation (3). Thus, the grinding rate contribution number (PRN) of the grinding pad is above 268.4 and below 959.3, thereby further improving the grinding rate.

[0017] 268.4≤PRN≤959.3···(3)

[0018] Preferably, the polishing slurry contains an aqueous solution of potassium permanganate as the strong oxidant. Thus, the reduction of potassium permanganate ions contained in the aqueous solution is suppressed by the polymer constituting the polishing pad, thereby precipitating permanganate on the polishing pad. The precipitated permanganate particles are then used as polishing particles to polish the semiconductor wafer.

[0019] Preferably, the resin constituting the polishing pad is selected from any one of the following: PES (polyethersulfone) resin, PSU (polysulfone) resin, PEEK (polyether ether ketone) resin, PU (polyurethane) resin, PET (polyethylene terephthalate (polyester)) resin, cured EP (epoxy) resin (cured product of glycidyl ether type epoxy resin and amine curing agent), PEG#400 acrylic resin (acrylic resin obtained by UV curing of acrylate monomers with acryloyl groups attached to both ends of polyethylene glycol with an average molecular weight of 400), PC (polycarbonate) resin, PVDF80%+HFP20% (polymer resin formed from 80% polyvinylidene fluoride and 20% hexafluoropropylene), and PVDF100% (polyvinylidene fluoride resin). Thus, by contacting the polishing pad with the polishing slurry containing metal ions, metal oxide particles are generated on the polishing pad.

[0020] Preferably, the abrasive pad may not have abrasive grains or independent or interconnected pores, but it may also have abrasive grains and / or independent and / or interconnected pores. More preferably, the abrasive pad contains at least one abrasive grain selected from silica, alumina, zirconia, manganese oxide, and cerium dioxide within the independent and / or interconnected pores. This facilitates planarization grinding through the distribution of abrasive grains and increases the number of contact points, thereby achieving a high grinding rate.

[0021] Furthermore, preferably, the purpose of the polishing method using the aforementioned polishing pad is that it is a method for polishing semiconductor wafers using polishing slurry and resin-based polishing pads. The polishing slurry is an aqueous solution of a strong oxidizing agent without abrasive particles, and the polishing pad is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine, wherein the hydrogen atom content is denoted as M. H (mass%), the percentage of carbon atoms contained therein is denoted as M. C (mass%), the percentage of oxygen atoms is denoted as M. O (mass%), the content of the nitrogen atoms is denoted as M. N (mass%), the sulfur content is denoted as M. S (mass%), the percentage of fluorine atoms is denoted as M. F When (mass%), it has a grinding rate contribution number PRN expressed by equation (1), and the grinding rate contribution number PRN satisfies equation (2).

[0022] Therefore, by using an aqueous polishing slurry that is an aqueous solution of a strong oxidant without abrasive particles, a fine-mesh filter can be used along the circulation path of the polishing slurry, thus significantly reducing the generation of scratches. For polishing semiconductor wafers, stable polishing can be achieved, and abrasive particle consumption is suppressed, thereby reducing environmental impact. Furthermore, the resin polishing pad is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine. The polishing rate contribution number (PRN) of the polishing pad is 268.4 or higher and 1516.3 or lower, thus significantly improving the polishing rate. Attached Figure Description

[0023] Figure 1 This is a perspective view schematically showing a grinding apparatus for CMP-based grinding processing using a grinding plate according to an embodiment of the present invention.

[0024] Figure 2 It is an illustrative explanation Figure 1 A top view of the rotating mechanism of the attachment disc in the grinding processing device.

[0025] Figure 3 It means as a component Figure 1 The diagram shows the chemical structure of a PES resin (polyethersulfone resin), an example of the resin used in abrasive pads.

[0026] Figure 4 It means as a component Figure 1 The diagram shows the chemical structure of PSU resin (polysulfone resin), an example of the resin used in abrasive pads.

[0027] Figure 5 It means as a component Figure 1 The diagram shows the chemical structure of PPSU resin (polyphenylsulfone resin), an example of the resin used in abrasive pads.

[0028] Figure 6 It means as a component Figure 1 The chemical structure diagram of a type of PEEK resin (polyetheretherketone resin) is shown.

[0029] Figure 7 It means as a component Figure 1 The diagram shows the chemical structure of an example of the resin used in abrasive pads, PU resin (a polyurethane resin synthesized from isocyanate and polyol).

[0030] Figure 8 It means as a component Figure 1 The chemical structure diagram of an example of the resin used in abrasive pads is shown in Figure 1. PET resin (polyethylene terephthalate (polyester) resin).

[0031] Figure 9 It means as a component Figure 1 The diagram shows the chemical structure of EP resin (cured epoxy resin), an example of the resin used in abrasive pads.

[0032] Figure 10 It means as a component Figure 1 The diagram shows the chemical structure of an example of PEG#400 acrylic resin used in abrasive pads.

[0033] Figure 11 It means as a component Figure 1 The diagram shows the chemical structure of PC resin (polycarbonate resin), an example of the resin used in abrasive pads, and is a schematic diagram representing the network structure of epoxy resin.

[0034] Figure 12 It means as a component Figure 1 The chemical structure diagram of an example of an abrasive pad resin is shown for a copolymer resin of 80% polyvinylidene fluoride and 20% hexafluoropropylene (PVDF(80%)-HFP(20%) resin).

[0035] Figure 13 It means as a component Figure 1 The diagram shows the chemical structure of PVDF (polyvinylidene fluoride) resin, an example of the resin used in abrasive pads.

[0036] Figure 14 It means as a component Figure 1 A diagram showing the chemical structure of melamine resin (thermosetting compound), a comparative example of the abrasive pad.

[0037] Figure 15 It means as a component Figure 1 A diagram showing the chemical structure of PA6 (polyamide 6 (nylon 6) resin), a comparative example of the abrasive pad.

[0038] Figure 16 It means as a component Figure 1 A diagram showing the chemical structure of PPS resin (linear polyphenylene sulfide resin), a comparative example of the abrasive pad.

[0039] Figure 17 This is a table showing the resin of the grinding pad used in the grinding of SiC in Experimental Example 1, the coefficients of regression analysis for each element constituting the resin, the grinding rate, the surface roughness, and the contribution of the grinding rate.

[0040] Figure 18 This is a graph showing the contribution of the resin of the abrasive pad used in each abrasive example of Experiment 1 to the abrasive rate and the actual abrasive rate.

[0041] Figure 19This is a diagram representing a polymer structure that theoretically contributes most to improving the grinding rate PRN, consisting only of carbon (C) and oxygen (O), with more oxygen (O).

[0042] Figure 20 The image shown is a SEM image, which is a photograph obtained by using a scanning electron microscope to capture a paste-like precipitate adhering to the abrasive surface of the abrasive pad.

[0043] Figure 21 It is shown in contrast by performing Figure 20 The image shows the X-ray diffraction pattern of the particulate material as shown in the SEM image and the X-ray diffraction pattern of potassium permanganate.

[0044] Figure 22 This is a table showing the resin of the polishing pad used in the polishing of SiC in Experimental Example 2, the polishing rate, and the surface roughness.

[0045] Figure 23 This is a schematic diagram illustrating the structure of the abrasive-encapsulated abrasive pad in the abrasive pad of Example 2.

[0046] Figure 24 This is a schematic diagram illustrating the grinding mechanism of the LHA (registered trademark) abrasive-encapsulated grinding pad.

[0047] Figure 25 This is a table showing the resin of the polishing pad, polishing rate, and surface roughness used in the polishing of SiC in Experimental Example 3.

[0048] Figure 26 This is a table showing the resin of the polishing pad, polishing rate, and surface roughness used in the polishing of SiC in Experimental Example 4. Detailed Implementation

[0049] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. Furthermore, in the following embodiments, the drawings are appropriately simplified or modified, and the dimensional ratios and shapes of the parts are not necessarily depicted accurately.

[0050] [Example]

[0051] Figure 1 This diagram conceptually illustrates the main components of a planar polishing apparatus 10 for polishing compound semiconductor wafers such as SiC wafers, GaN wafers, and InP wafers, with the guide roller fixing table removed, as an example of the present invention. Figure 1In the planar grinding apparatus 10, a circular grinding platform (rotary table) 12 is supported in a state that allows it to rotate about its vertical axis of rotation C1. The grinding platform 12 is driven by a platform drive motor 14 to rotate at a certain speed in one of the rotational directions indicated by the arrow in the figure. A sheet-like resin grinding pad 18 is attached to the upper surface of the grinding platform 12, i.e., the surface on which the workpiece (semiconductor wafer) 16 is pressed.

[0052] A workpiece 16 is held on the lower surface of the attachment disk 20, which faces the polishing pad 18. The workpiece 16 is pressed against the polishing pad 18 by the attachment disk 20 with a specified load. In addition, a drip nozzle 22 is provided near the attachment disk 20 of the plane polishing apparatus 10, and polishing fluid (lubricant) PF delivered from a container (tank) not shown is supplied to the polishing platform 12.

[0053] In the surface grinding apparatus 10, as needed, the following are provided: an adjustment tool holding member (not shown), which is configured to rotate about a rotation axis parallel to the rotation axis C1 of the grinding platform 12 and to move in the direction of the rotation axis and in the radial direction of the grinding platform 12; and a grinding body adjustment tool (dresser or adjuster) such as a diamond wheel (not shown), which is mounted on the lower surface of the adjustment tool holding member, i.e., the surface facing the grinding pad 18. The adjustment tool holding member and the grinding body adjustment tool mounted thereon are pressed onto the grinding pad 18 while being driven to rotate by the adjustment tool drive motor (not shown), and reciprocate in the radial direction of the grinding platform 12, thereby adjusting the grinding surface of the grinding pad 18 and always maintaining the surface condition of the grinding pad 18 in a state suitable for grinding processing.

[0054] like Figure 2 As shown, at a position off-center from the rotation axis C1 on the grinding platform 12, a short cylindrical attachment disk 20, which holds the workpiece 16 to be ground on its lower surface using an adsorption, engagement, or holding frame, is supported by a pair of idle guide rollers 30 and drive guide rollers 32 on a guide roller fixing table 28 fixed to a frame (not shown). The attachment disk 20 is able to rotate about its rotation axis C2. The attachment disk 20 is rotated about its rotation axis C2 by a rotational force based on the difference in circumferential speed between the grinding platform and the grinding pad 18, and, for example, is pressed against the grinding pad 18 on the grinding platform 12 by a load based on a pressure iron (weight) 34, thereby grinding the workpiece 16.

[0055] When performing grinding using the grinding apparatus 10, the following grinding method is applied. Specifically, while the grinding pad 18 attached to the grinding platform 12, the attachment disk 20, and the workpiece 16 held on its lower surface are rotated by the platform drive motor 14 and the drive guide roller 32 around their respective rotation axes C1 and C2, a grinding fluid PF without abrasive particles is supplied from the drip nozzle 22 to the surface of the grinding pad 18, and the workpiece 16 held on the attachment disk 20 is pressed against the grinding pad 18. Thus, the surface of the workpiece 16 to be ground, i.e., the surface facing the grinding pad 18, is ground flat by the chemical abrasive action of the grinding fluid PF.

[0056] The abrasive pad 18 is obtained by molding a sheet from a dense resin free of air bubbles and abrasive particles, a porous resin containing independent or interconnected pores, or an abrasive-encapsulated resin with abrasive particles (silica) encapsulated within independent or interconnected pores. These resins are polymers containing carbon (C) and at least one of hydrogen (H), oxygen (O), nitrogen (N), sulfur (S), and fluorine (F), wherein the hydrogen (H) content is denoted as M. H (mass%), the percentage of carbon (C) is denoted as M. C (mass%), the oxygen (O) content is denoted as M. O (mass%), the percentage of nitrogen (N) is denoted as M. N (mass%), the sulfur (S) content is denoted as M. S (mass%), the percentage of fluorine (F) is denoted as M. F When (mass%), it is a resin having a grinding rate contribution number PRN expressed by formula (1) and a grinding rate contribution number PRN satisfying formula (2), preferably a resin satisfying formula (3).

[0057] PRN = -5738M H +849.6M C +1766M O -40.7M N -394.9M S +219.4M F ···(1)268.4≤PRN≤1516.3···(2)

[0058] 268.4≤PRN≤959.3···(3)

[0059] Resins for which the grinding rate contribution factor PRN satisfies equation (3) can be listed as examples. Figure 3 The chemical structural formula of PES resin (polyethersulfone resin) is used to represent PES resin (polyethersulfone resin). Figure 4 The chemical structural formula of PSU resin (polysulfone resin) is used to represent PSU resin (polysulfone resin). Figure 5The chemical structural formula of PPSU resin (polyphenylsulfone resin) is used to represent PPSU resin (polyphenylsulfone resin). Figure 6 The chemical structural formula of PEEK resin (polyetheretherketone resin) is used to represent PEEK resin (polyetheretherketone resin). Figure 7 The chemical structural formula of PU resin (a polyurethane resin synthesized from isocyanate and polyol) is used... Figure 8 The chemical structural formula of PET resin (polyethylene terephthalate (polyester) resin) is used to represent PET resin (polyethylene terephthalate (polyester) resin). Figure 9 The chemical structural formula represents EP resin (a cured epoxy resin, specifically a cured glycidyl ether type epoxy resin and an amine-based curing agent), used... Figure 10 The chemical structural formula of PEG#400 series acrylic resin (an acrylic resin obtained by UV curing of acrylate monomers with acryloyl groups bonded to both ends of polyethylene glycol with an average molecular weight of 400), is used... Figure 11 The chemical structural formula of PC resin (polycarbonate resin) is used to represent PC resin (polycarbonate resin). Figure 12 The chemical structural formula represents a copolymer resin of 80% polyvinylidene fluoride and 20% hexafluoropropylene (PVDF(80%)-HFP(20%) resin), used... Figure 13 The chemical structural formula represents PVDF (100%) resin (polyvinylidene fluoride resin).

[0060] [Experimental Example 1]

[0061] The following describes an experimental example of grinding a semiconductor wafer conducted by the inventors. First, using a... Figure 1 The grinding apparatus 10 shown is similarly configured to accommodate diameters... Four-inch SiC wafers were polished under the polishing test conditions 1 shown below, i.e., 14 polishing processes were performed using comparative examples 1-3 and examples 1-11, respectively. The polishing pads of comparative examples 1-3 were made of... Figures 14-16 The chemical structure of the abrasive pads made of resin is shown in the figure. The abrasive pads of Examples 1 to 11 are made of resin. Figures 4 to 13 The chemical structure of the resin-based polishing pad is shown. The resin used in Comparative Examples 1-3 and Examples 1-11 is a resin plate free of abrasive particles and pores. Furthermore, the polishing rate PR and surface roughness Sa of the SiC wafer after the polishing test were measured using the following polishing rate measurement method and surface roughness measurement method. In addition, for each polishing pad used in Comparative Examples 1-3 and Examples 1-11, the polishing rate contribution number PRN was calculated using Equation (1).

[0062] [Grinding Processing Test Condition 1]

[0063] Workpiece: Diameter It is a 4-inch SiC wafer (0001) with a tilt angle of 4°.

[0064] Workpiece rotation speed: 60 rpm

[0065] Grinding pad diameter:

[0066] Grinding pad rotation speed: 60 rpm

[0067] Grinding pressure: 42 kPa

[0068] Grinding slurry: KMnO4 (0.25 mol / L), pH = 3.2

[0069] Flow rate of grinding fluid: 10 ml / min

[0070] [Method for measuring grinding rate]

[0071] The mass difference of the workpiece before and after the grinding test is determined using a chemical balance. The grinding amount (wear thickness) is calculated from the known density of the workpiece and the surface area of ​​the grinding surface. The grinding rate PR (nm / h) is calculated by dividing the grinding amount by the grinding time.

[0072] [Surface Roughness Measurement Methods]

[0073] The surface profile of the polished surface of the silicon wafer after the polishing test was measured using a white interference microscope (VS-1330 manufactured by Hitachi High-Tech Corporation), and the arithmetic mean roughness Sa specified in ISO 25178 was calculated.

[0074] exist Figure 17 The table shows the types of resins used in the three types of abrasive pads used in Comparative Examples 1 to 3 and the eleven types of abrasive pads used in Examples 1 to 11 obtained by Experiment 1, the content (mass %) of each element contained in the resin, the abrasive test results (abrasive rate PR (nm / h), surface roughness Sa (nm) of the abrasive surface), and the abrasive rate contribution number PRN.

[0075] exist Figure 17In the examples, the polishing pads of Comparative Examples 1-3 belong to the group of polishing pads with poor practicality, whose polishing rate PR is lower than 249 (nm / min), which is the practicality criterion. The polishing pads used in Examples 1-11 belong to the group of polishing pads with a polishing rate PR higher than 250 (nm / min), which is the practicality criterion. Regarding the surface roughness Sa (nm), there is not a significant difference in average value between the polishing pads of Comparative Examples 1-3 and Examples 1-11. Furthermore, the practicality criterion for the polishing rate PR is set to three times the polishing rate PR of the melamine resin polishing pad.

[0076] (Derivation of Equation (1) for the grinding rate contribution factor PRN)

[0077] exist Figure 17 In Example 6, the PET resin, compared to the PU resin of Example 5, has nitrogen (N) and hydrogen (H) bonding replacing carbon (C) and oxygen (O) bonding, thus increasing the grinding rate PR by approximately 2 times. In Comparative Example 3, the PPS resin, compared to the PES resin of Example 1, has oxygen (O) disappearing, thus reducing the grinding rate PR to approximately 1 / 4. In Example 4, the PEEK resin, compared to the PES resin of Example 1, has sulfur (S) disappearing, thus increasing the grinding rate PR by approximately 1.2 times. In Example 8, the PEG#400 acrylic resin, compared to the PES resin of Example 1, has sulfur (S) disappearing, thus increasing the grinding rate PR by approximately 1.2 times. Based on these facts, it is inferred that carbon (C) and oxygen (O) atoms have the effect of increasing the grinding rate PR, and sulfur (S), nitrogen (N), and hydrogen (H) atoms also have the effect of increasing the grinding rate PR.

[0078] Figure 17 The coefficients of the regression analysis (for the content rate) are the coefficients of the regression equations obtained by performing regression analysis on carbon (C), hydrogen (H), oxygen (O), nitrogen (N), sulfur (S), and fluorine (F) contained in comparative examples 1-3 and examples 1-11, respectively. It shows that H, N, and S atoms with negative coefficients have the effect of reducing the grinding rate PR, while C, O, and F atoms with positive coefficients have the effect of increasing the grinding rate PR. Furthermore, it is clarified that the sign of the coefficients for these C, H, O, N, S, and F atoms corresponds to the oxidizing and reducing properties of these atoms. Therefore, if the hydrogen content rate is denoted as M... H (mass%), the carbon content is denoted as M. C (mass%), the oxygen content is denoted as M. O (mass%), the nitrogen content is denoted as M. N(mass%), the sulfur content is denoted as M. S (mass%), the fluorine content is denoted as M. F (mass%), then the grinding rate contribution number PRN is defined as shown in Equation (1) by assigning coefficients to each element obtained through regression analysis to each content percentage.

[0079] (Derivation of the range of the grinding rate contribution factor PRN)

[0080] When calculating the grinding rate contribution factor PRN using equation (1) for each of Comparative Examples 1–3 and Examples 1–11, it is: Figure 17 The values ​​are shown. Furthermore, the relationship between these grinding rate contribution factors (PRN) and the respective grinding rates (PR) (nm / h) of Comparative Examples 1–3 and Examples 1–11 is as follows: Figure 18 As shown. In Figure 18 In the examples 1-11, the minimum value of the grinding rate contribution number PRN is 268, and the maximum value is 959.3. Therefore, the above equation (3) is derived.

[0081] However, among the coefficients of carbon (C), hydrogen (H), oxygen (O), nitrogen (N), sulfur (S), and fluorine (F) contained in Examples 1-11 of Formula (1), oxygen (O) is the element that contributes the most to the polishing rate contribution factor (PRN). Furthermore, since it is a resin constituting the polishing pad, carbon (C) is essential as the backbone of the polymer structure. Therefore, based on these facts, it is theoretically considered that a molecular structure containing only carbon (C) and oxygen (O), with the highest concentration of oxygen (O), can best improve the polishing rate contribution factor (PRN). Such a resin becomes... Figure 19 The polymer structure shown is as follows. In this polymer, since the atomic weight of carbon (C) is 12.01 and the atomic weight of oxygen (O) is 15.99, the molar ratio of carbon (C) to oxygen (O) is 1:2. Furthermore, the mass ratio of carbon (C) to oxygen (O) is 0.273:0.727.

[0082] Thus, since the mass ratio of carbon (C) to oxygen (O) is 0.273:0.727, if the hydrogen (H) content M... H =0, Carbon (C) content M C =0.273, Oxygen (O) content M O =0.727, Nitrogen (N) content M N =0, Sulfur (S) content M S =0, Fluorine (F) content M F Substituting 0 into the right side of equation (1), we get the theoretical maximum value of the grinding rate contribution factor PRN as "1516.3". Thus, equation (2) is derived.

[0083] (Explanation of the grinding mechanism)

[0084] Next, the following explains the polishing mechanism that enables polishing without abrasives in the polishing process of SiC wafers using polishing pads made of resin plates without abrasives and pores, specifically Comparative Examples 1-3 and Examples 1-11. First, when the potassium permanganate aqueous solution constituting the polishing slurry comes into contact with a resin containing C, O, and / or F atoms, which has strong oxidizing power, it is difficult for the potassium permanganate to strip electrons from the resin, making it difficult for the oxidation reactions shown in formulas (4) and (5) to occur. Under these conditions, tiny crystals of potassium permanganate (KMnO4), which function as abrasives, precipitate out through the evaporation of water caused by the heat during polishing. As shown in formulas (4) and (5), the precipitated potassium permanganate (KMnO4) as abrasives has high electron stripping activity, resulting in high oxidizing power and a higher polishing rate. Conversely, when the potassium permanganate aqueous solution constituting the grinding slurry comes into contact with a resin that is highly reducing due to the presence of H, N, and S atoms, a redox reaction as shown in formula (4) or (5) occurs, KMnO4(MnO4) - (Ions) are reduced to produce Mn 2+ The dissolution of ions or the precipitation of MnO2. At this time, in Mn... 2+ When ions are dissolved, there is no solid matter to form abrasive particles, so grinding cannot be performed or the grinding rate becomes very low. In addition, when MnO2 is precipitated, the electron deprivation is low as shown in formula (6), so the oxidizing power is low and the grinding rate becomes low.

[0085]

[0086] MnO2 + 4H + +2e - →Mn 2+ +2H2O···(6)

[0087] Figure 20 The image shows a SEM image of tiny precipitates (KMnO4 crystals) CP contained in the paste-like substance on the surface of the polishing pad, which is made of a resin with strong oxidizing power containing C atoms, O atoms and / or F atoms, namely any of the resins in Examples 1 to 11, in contact with an aqueous solution of potassium permanganate constituting the polishing slurry. Figure 21 The X-ray diffraction pattern of the precipitate CP is shown. Figure 21 In the X-ray diffraction pattern, the peak pattern of the precipitate CP is consistent with that of KMnO4, thus indicating that the precipitate CP is a KMnO4 precipitate. Since this KMnO4 precipitate CP functions as an abrasive, SiC wafers can be polished even when using a polishing pad made of resin plate without abrasive particles and pores.

[0088] [Experimental Example 2]

[0089] Next, Figure 22 The abrasive pads shown in Comparative Examples 4-7 and Examples 12-18 were applied to... Figure 1 The grinding apparatus 10 shown is similarly configured to grind a diameter under the same grinding test condition 2 as grinding test condition 1. The wafer is a 4-inch SiC wafer. In this Experimental Example 2, the difference from Experimental Example 1 is that a commercially available abrasive pad with abrasive particles was used; in Comparative Example 4, a free abrasive slurry containing silica abrasive particles was used; Examples 13, 15, 17, and 18 are abrasive-encapsulated abrasive pads. As described, the resin constituting the abrasive pads of Examples 12–18 is a resin whose abrasive rate contribution factor (PRN) satisfies formula (3).

[0090] exist Figure 22 In the comparative examples 4 and 7, both are non-woven fabric pads (containing polyester fibers impregnated with polyurethane). However, in the grinding using comparative example 4, the grinding rate PR was more than twice that of comparative example 7. This is believed to be due to the use of free abrasive slurry. Furthermore, examples 12-18 achieved a higher grinding rate PR compared to comparative example 5.

[0091] exist Figure 22 In the examples 12 and 13, both are epoxy resin pads, but Example 13 is an abrasive-encapsulated resin pad containing silica abrasive particles. The grinding rate PR of Example 13 is approximately 1.4 times higher than that of Example 12. Similarly, Examples 14 and 15 are both made of PEG#400 acrylic resin, but Example 15 is an abrasive-encapsulated resin pad containing silica abrasive particles. The grinding rate PR of Example 15 is approximately 1.8 times higher than that of Example 14. Furthermore, Examples 16 and 17 are both PES resin pads, but Example 17 is an abrasive-encapsulated resin pad containing silica abrasive particles. The grinding rate PR of Example 17 is approximately 2.1 times higher than that of Example 16. Example 18, like Example 17, is an inner abrasive resin pad, but differs in that the inner abrasive particles are cerium dioxide abrasive particles. As an inner abrasive resin pad with cerium dioxide abrasive particles, Example 18 achieved a grinding rate PR that is approximately 0.84 times higher than that of Example 17, which has inner silica abrasive particles.

[0092] Figure 23 This is a schematic diagram illustrating the structure of the described internally encapsulated abrasive-type grinding pad. Figure 23In this design, the base resin 42 of the LHA abrasive pad is fibrous, for example, with an average cross-sectional diameter of about 0.05 μm. Within the gaps of this fibrous base resin 42, abrasive grains 44, for example, with an average particle size of 0.3 μm, are either partially attached to the outer periphery of the base resin 42 or separated from the base resin 42 within these gaps. Considering the connecting pores 46 that connect the gaps between the fibrous base resin 42, it can be said that the abrasive grains 44 are disposed within these connecting pores 46. Furthermore, the connecting pores 46 are formed in a manner that connects to each other as elongated pores (not shown). That is, the abrasive grains 44 are either partially attached to the inner wall of the connecting pores 46 or separated from the base resin 42 within these connecting pores 46, and each connecting pore 46 encapsulates at least one abrasive grain 44 within the base resin 42. When using the LHA (Low Abrasive Pad) for grinding, the abrasive particles 44 encased in the LHA are supplied to the grinding surface, increasing the grinding rate PR.

[0093] (Explanation of the grinding mechanism of abrasive-encapsulated grinding pads)

[0094] Figure 24 This is a schematic diagram illustrating the grinding mechanism of the LHA (Low Abrasive) abrasive pad. Figure 24 In this process, the surface of the inner abrasive pad LHA and the communicating pores 46 are filled with the abrasive slurry PF by the dripping of the abrasive slurry PF. As a result, the potassium permanganate aqueous solution constituting the abrasive slurry PF comes into contact with the parent resin 42, which has strong oxidizing power due to the presence of C, O and / or F atoms. Electrons are taken away by the oxidation reaction shown in formula (4) or formula (5), and tiny precipitates (KMnO4 crystals) CP that function as abrasive grains are precipitated. If the workpiece 16 is moved on the surface of the inner abrasive pad LHA in this state, the precipitates (KMnO4 crystals) CP and the abrasive grains 44 come into contact with the workpiece 16. Furthermore, the frequency of the precipitates CP contacting the workpiece 16 increases due to the movement of the abrasive grains 44, thus a high grinding rate PR can be obtained.

[0095] [Experiment Example 3]

[0096] Next, Figure 25 The abrasive pads shown in Comparative Examples 8-9 and Examples 19-25 are applied to... Figure 1 The grinding apparatus 10 shown is similarly configured and grinds a diameter under grinding test conditions 3. The wafer is a 2-inch GaN wafer. This Experimental Example 3 differs from Experimental Example 1 in that: the GaN wafer is ground; in the case of Comparative Example 8, a free abrasive slurry containing silicon dioxide abrasive particles is used; Examples 21, 23, 24, and 25 are abrasive-encapsulated grinding pads. As described, the resin constituting the grinding pads of Examples 19–258 is a resin whose grinding rate contribution factor PRN satisfies formula (3).

[0097] [Grinding Processing Test Condition 3]

[0098] Workpiece: Diameter For a 2-inch GaN wafer (0001) Ga surface

[0099] Workpiece rotation speed: 60 rpm

[0100] Grinding pad diameter:

[0101] Grinding pad rotation speed: 60 rpm

[0102] Grinding pressure: 50 kPa

[0103] Grinding slurry: KMnO4 (0.25 mol / L), pH = 1.0

[0104] Grinding slurry: KMnO4 (0.25 mol / L), pH = 1.0

[0105] +Silica (12.5wt%)

[0106] Flow rate of grinding fluid: 10 ml / min

[0107] exist Figure 25 In the comparative examples 8 and 9, both are made of rigid polyurethane resin pads (with pores). However, in the grinding using comparative example 8, the grinding rate PR was more than 10 times higher than that using comparative example 9. This is believed to be due to the use of free abrasive slurry. In addition, examples 19-25 also achieved a higher grinding rate PR compared to comparative example 9.

[0108] exist Figure 25Examples 19, 20, and 21 are all PES resin pads, but differ in that Example 19 is a resin plate without pores, Example 20 is a resin pad with interconnected pores, and Example 21 is an abrasive-encapsulated grinding pad containing silica abrasive particles. Example 21 achieved a grinding rate PR approximately 10 times higher than Examples 19 and 20. Examples 22 and 23 are both PEG#400 series resin pads, but differ in that Example 22 is a resin pad with independent pores, and Example 23 is an abrasive-encapsulated grinding pad containing silica abrasive particles. Example 23 achieved a grinding rate PR approximately 6.5 times higher than Example 22. Example 24, compared to Comparative Example 9, differs in that Example 24 is a silica-encapsulated abrasive pad made of PVDF (80%) + HFP (20%) resin, achieving a grinding rate PR approximately 33 times higher. Example 25, compared to Comparative Example 9, differs in that it is an epoxy resin-encapsulated silica-encapsulated abrasive pad, achieving a grinding rate PR approximately 30 times higher.

[0109] [Experiment Example 4]

[0110] Next, Figure 26 The abrasive pads shown in Comparative Example 10 and Examples 26-27 are applied to... Figure 1 The grinding apparatus 10 shown is similarly configured and grinds a diameter under grinding test conditions 4. The wafer is a 2-inch InP wafer. This Experimental Example 4 differs from Experimental Example 1 in that: the InP wafer is being ground; a free abrasive slurry containing silica abrasive particles was used in the case of Comparative Example 10; and Example 27 is an abrasive-encapsulated grinding pad. As described, the resin constituting the grinding pads of Examples 26-27 is a resin whose grinding rate contribution factor (PRN) satisfies formula (3).

[0111] [Grinding Processing Test Condition 4]

[0112] Workpiece: Diameter For 2-inch InP wafers (100)

[0113] Workpiece rotation speed: 90 rpm

[0114] Grinding pad diameter:

[0115] Grinding pad rotation speed: 90 rpm

[0116] Grinding pressure: 14 kPa

[0117] Grinding slurry: KMnO4 (0.25 mol / L), pH = 6.9

[0118] Grinding slurry: KMnO4 (0.25 mol / L), pH = 6.7

[0119] +Silica (12.5wt%)

[0120] Flow rate of grinding fluid: 10 ml / min

[0121] exist Figure 26 In the examples, Comparative Example 10 is a rigid polyurethane resin pad (with pores) and uses free abrasive slurry, thus achieving a higher grinding rate PR. Example 26 is composed of a PES resin plate without pores or abrasives, achieving a grinding rate PR approximately 8% higher than Comparative Example 10. Example 27 is composed of an abrasive-encapsulated PES resin pad with interconnected pores and silica abrasives encapsulated within these pores, achieving a grinding rate PR approximately twice that of Comparative Example 10.

[0122] As described, the polishing method using the polishing pad 18 made of the resin of this embodiment, since it uses an aqueous polishing slurry PF as a strong oxidant without abrasive particles, allows for the use of a fine-mesh filter along the circulation path of the polishing slurry PF. This significantly reduces the generation of scratches, resulting in stable polishing of semiconductor wafers and suppressing abrasive particle consumption, thereby reducing environmental impact. Furthermore, the resin polishing pad is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine. The polishing rate contribution number (PRN) of the polishing pad is 268.4 or higher and 1516.3 or lower, thus significantly and stably increasing the polishing rate.

[0123] Furthermore, based on the abrasive pad 18 made of the resin of this embodiment and the abrasive method using the abrasive pad 18, it is preferable that the abrasive rate contribution number (PRN) of the abrasive pad satisfies equation (3). As a result, the abrasive rate contribution number (PRN) of the abrasive pad is 268.4 or more and 959.3 or less, thus further improving the abrasive rate.

[0124] Furthermore, according to the polishing pad 18 made of the resin of this embodiment and the polishing method using the polishing pad 18, the polishing slurry PF contains an aqueous solution of potassium permanganate as a strong oxidizing agent. As a result, the reduction of permanganate ions contained in the potassium permanganate aqueous solution is suppressed by the polymer constituting the polishing pad 18, thereby precipitating permanganate on the polishing pad 18, and using the precipitated permanganate particles CP as polishing particles to polish the workpiece (semiconductor wafer) 16.

[0125] Furthermore, according to the polishing pad 18 made of the resin of this embodiment and the polishing method using the polishing pad 18, the resin constituting the polishing pad 18 is selected from any one of the following: PES (polyethersulfone) resin, PSU (polysulfone) resin, PEEK (polyether ether ketone) resin, PU (polyurethane) resin, PET (polyethylene terephthalate (polyester)) resin, cured EP (epoxy) resin (cured product of glycidyl ether type epoxy resin and amine curing agent), PEG#400 acrylic resin (acrylic resin obtained by UV curing of acrylate monomers with acryloyl groups attached to both ends of polyethylene glycol with an average molecular weight of 400), PC (polycarbonate) resin, PVDF 80% + HFP 20% (copolymer resin of 80% polyvinylidene fluoride and 20% hexafluoropropylene), and PVDF 100% (polyvinylidene fluoride resin). Thus, when the polishing pad 18 is contacted by the polishing slurry PF containing metal ions, metal oxide particles are precipitated on the polishing pad 18.

[0126] Furthermore, according to the polishing pad 18 made of the resin of this embodiment and the polishing method using the polishing pad 18, the polishing pad 18 may not have abrasive grains and independent or interconnected pores, but it may also have abrasive grains and independent and / or interconnected pores. More preferably, the polishing pad 18 contains at least one abrasive grain selected from silica, alumina, zirconia, manganese oxide, and cerium dioxide as abrasive grains within the independent and / or interconnected pores. This facilitates planarization polishing by distributing the abrasive grains and increases the number of contact points, thereby achieving a high polishing rate.

[0127] Furthermore, according to the polishing method using the polishing pad 18 made of resin according to this embodiment, a semiconductor wafer is polished using a polishing slurry PF, which is an aqueous solution of a strong oxidant without abrasive particles, and a polishing pad 18 made of resin. The polishing pad is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine, wherein the hydrogen atom content is denoted as M. H (mass%), the percentage of carbon atoms contained therein is denoted as M. C (mass%), the percentage of oxygen atoms is denoted as M. O (mass%), the content of the nitrogen atoms is denoted as M. N (mass%), the sulfur content is denoted as M. S (mass%), the percentage of fluorine atoms is denoted as M. F At (mass%), it has a grinding rate contribution number PRN expressed by equation (1), which satisfies equation (2).

[0128] Therefore, since the polishing slurry PF is an aqueous solution of a strong oxidant without abrasive particles, a fine-mesh filter can be used along the circulation path of the polishing slurry PF. This significantly reduces the generation of scratches, resulting in stable polishing of semiconductor wafers and suppressing the consumption of abrasive particles 44, thereby reducing environmental impact. Furthermore, the resin polishing pad 18 is a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine. The polishing rate contribution number (PRN) of the polishing pad is 268.4 or higher and 1516.3 or lower, thus significantly increasing the polishing rate.

[0129] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited thereto and may be implemented in other ways.

[0130] For example, in the described embodiment, the abrasive pad 18 is an abrasive pad known as the LHA pad (registered trademark), whose base resin 42 is a fibrous resin. However, this is only a preferred embodiment of the invention. The base resin 42 in the abrasive pad 18 of the invention may also be composed of a dense resin without pores and abrasive particles, if it is a resin containing carbon (C) and at least one of hydrogen (H), oxygen (O), nitrogen (N), sulfur (S) and fluorine (F) in each repeating unit.

[0131] In addition, in the embodiments described, the polishing pad 18, especially the LHA pad which is effective for polishing GaN wafers, is a pad with mesh-like connecting pores 46, but it can also be a pad with bubble-like connecting pores 46, or a pad made of dense resin without connecting pores 46.

[0132] Alternatively, in the described embodiment, the polishing slurry PF may also be a polishing slurry containing sodium permanganate ions obtained by dissolving sodium permanganate in water. In this case, when the polishing slurry PF contacts the polishing pad 18, sodium permanganate precipitates as a permanganate salt on the polishing pad 18.

[0133] Furthermore, the above is only one implementation method, and not all other embodiments are illustrated. However, the present invention can be implemented in various ways with modifications and improvements based on the knowledge of those skilled in the art without departing from its spirit.

[0134] Explanation of reference numerals in the attached figures

[0135] 10: Grinding and processing equipment

[0136] 16: Workpiece (semiconductor wafer)

[0137] 18: Grinding pad

[0138] 42: Base Material Resin

[0139] 44: Abrasive grains

[0140] 46: Stomata

[0141] PF: Grinding fluid

[0142] CP: Permanganate precipitates (grinding particles)

Claims

1. A polishing pad for semiconductor wafers, characterized in that, It is a polishing pad for semiconductor wafers that uses polishing slurry to polish semiconductor wafers. The polishing slurry is an aqueous solution of a strong oxidizing agent without abrasive particles. The abrasive pad is composed of a polymer containing carbon (C) and at least one of hydrogen (H), oxygen (O), nitrogen (N), sulfur (S), and fluorine (F), wherein the hydrogen content is denoted as M. H The percentage by mass of carbon is denoted as M. C The percentage by mass of oxygen is denoted as M. O The percentage by mass of nitrogen is denoted as M. N The percentage by mass of sulfur is denoted as M. S The percentage by mass of fluorine is denoted as M. F At a mass percentage, the grinding rate contribution factor PRN is expressed by equation (1), and the grinding rate contribution factor PRN satisfies equation (2). PRN=-5738M H +849.6M C +1766M O -40.7M N -394.9M S +219.4M F ···(1), 268.4≤PRN≤1516.3···(2).

2. The polishing pad for a semiconductor wafer according to claim 1, characterized in that, The grinding rate contribution factor PRN of the grinding pad satisfies equation (3). 268.4≤PRN≤959.3···(3).

3. The polishing pad for a semiconductor wafer according to claim 1, characterized in that, The grinding fluid contains an aqueous solution of potassium permanganate as the strong oxidant.

4. The polishing pad for a semiconductor wafer according to claim 1, characterized in that, The resin constituting the abrasive pad is selected from any one of the following: polyethersulfone (PES) resin, polysulfone (PSU) resin, polyphenylene sulfone (PPSU) resin, polyether ether ketone (PEEK) resin, polyurethane (PU) resin, polyethylene terephthalate (PET) resin as a polyester, cured epoxy (EP) resin, PEG#400 acrylic resin, polycarbonate (PC) resin, copolymer resin formed from 80% polyvinylidene fluoride and 20% hexafluoropropylene (PVDF 80% + HFP 20%), and polyvinylidene fluoride resin (PVDF 100%). The cured epoxy (EP) resin is a cured product of glycidyl ether type epoxy resin and amine curing agent. The PEG#400 acrylic resin is an acrylic resin obtained by ultraviolet curing of acrylate monomers with acryloyl groups bonded to both ends of polyethylene glycol with an average molecular weight of 400.

5. The polishing pad for a semiconductor wafer according to claim 1, characterized in that, The abrasive pad is composed of any of the following: a resin without abrasive particles and independent or interconnected pores; a resin with independent and / or interconnected pores; or a resin in which at least one of silica abrasive particles, alumina abrasive particles, zirconium oxide abrasive particles, manganese oxide abrasive particles, and cerium dioxide abrasive particles are encapsulated within the independent and / or interconnected pores as abrasive particles.

6. A method for grinding semiconductor wafers, characterized in that, It is a method for polishing semiconductor wafers using polishing slurry and resin-based polishing pads, wherein the polishing slurry is an aqueous solution of a strong oxidizing agent without abrasive particles. The abrasive pad is composed of a polymer containing carbon and at least one of hydrogen, oxygen, nitrogen, sulfur, and fluorine, wherein the hydrogen atom content is denoted as M. H The percentage by mass, denoted as M, represents the percentage of carbon atoms present. C The percentage by mass, denoted as M, represents the percentage of oxygen atoms present. O The percentage by mass of nitrogen atoms is denoted as M. N The percentage by mass of sulfur is denoted as M. S The percentage by mass of fluorine atoms is denoted as M. F At mass % , it has a grinding rate contribution number PRN expressed by equation (1), which satisfies equation (2).

7. The semiconductor wafer polishing method according to claim 6, characterized in that, The grinding rate contribution factor PRN of the grinding pad satisfies equation (3). 268.4≤PRN≤959.3···(3).

8. The method for polishing a semiconductor wafer according to claim 6, characterized in that, The grinding fluid contains an aqueous solution of potassium permanganate as the strong oxidant.

9. The method for polishing a semiconductor wafer according to claim 6, characterized in that, The resin constituting the abrasive pad is selected from any one of the following: polyethersulfone (PES) resin, polysulfone (PSU) resin, polyphenylene sulfone (PPSU) resin, polyether ether ketone (PEEK) resin, polyurethane (PU) resin, polyethylene terephthalate (PET) resin as a polyester, cured epoxy (EP) resin, PEG#400 acrylic resin, polycarbonate (PC) resin, copolymer resin formed from 80% polyvinylidene fluoride and 20% hexafluoropropylene (PVDF 80% + HFP 20%), and polyvinylidene fluoride resin (PVDF 100%). The cured epoxy (EP) resin is a cured product of glycidyl ether type epoxy resin and amine curing agent. The PEG#400 acrylic resin is an acrylic resin obtained by ultraviolet curing of acrylate monomers with acryloyl groups bonded to both ends of polyethylene glycol with an average molecular weight of 400.

10. The method for polishing a semiconductor wafer according to claim 6, characterized in that, The abrasive pad is composed of any of the following: a resin without abrasive particles and independent or interconnected pores; a resin with independent and / or interconnected pores; or a resin in which at least one of silica abrasive particles, alumina abrasive particles, zirconium oxide abrasive particles, manganese oxide abrasive particles, and cerium dioxide abrasive particles are encapsulated within the independent and / or interconnected pores as abrasive particles.

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