On-glass antenna with through-glass via sidewall shielding structure

Abstract

Techniques for a structure of an antenna apparatus are disclosed. In one aspect, an antenna device includes: a glass substrate having an upper surface, a lower surface, and a side portion; the first conductive structure is positioned on the upper surface of the glass substrate; the second conductive structure is positioned on the lower surface of the glass substrate; and a through glass via (TGV) structure including a first conductive film on a sidewall of the first TGV hole, the first conductive film configured to couple the first conductive structure to the second conductive structure, where the side includes a plurality of metallized recess structures, the metallized recess structures being configured to couple the first conductive structure to the second conductive structure. The plurality of metalized groove structures are provided with groove side walls and a plurality of second conductive films respectively located on the groove side walls of the plurality of metalized groove structures, and each groove side wall has a shape corresponding to a part of the TGV holes.

Description

[0001] Cross-references to related applications

[0002] This patent application claims the benefit of U.S. Provisional Application No. 63 / 490,172, filed March 14, 2023, entitled “ANTENNA ON GLASS WITH THROUGH GLASS VIA SIDEWALL ELECTROMAGNETIC INTERFERENCE SHIELDING,” the entire contents of which are expressly incorporated herein by reference. Technical Field

[0003] This disclosure relates generally to an antenna device, and more specifically, to an on-glass antenna dies having a through-glass via (TGV) sidewall shielding structure. Background Technology

[0004] Integrated circuit technology has made significant strides in improving computing power through the miniaturization of active components. Packaged devices can be found in many electronic components, including processors, servers, and radio frequency (RF) integrated circuits. Packaging technology is cost-effective in high-pin-count devices and / or high-volume components.

[0005] Additionally, antenna-on-glass (AOG) dies can be used to form antennas within radio frequency (RF) front-end circuitry (e.g., for use in millimeter-wave (mmWave) applications), where the RF front-end circuitry can be further mounted on a package substrate along with other electronic components. However, without appropriate shielding structures (e.g., for electromagnetic interference (EMI) shielding), AOG-based antennas may still be susceptible to EMI from adjacent components, potentially leading to degradation in antenna gain, throughput, and / or bandwidth.

[0006] Therefore, there is a need for an improved AOG die and a method for manufacturing such an AOG die, which can provide a shielding structure to address the aforementioned problems. Summary of the Invention

[0007] The following is a simplified summary of the invention relating to one or more aspects disclosed herein. Therefore, this summary should not be considered an exhaustive overview relating to all conceptual aspects, nor should it be considered to identify key or decisive elements relating to all conceptual aspects or to depict the scope associated with any particular aspect. Thus, the sole purpose of this summary is to present, in a concise form, certain concepts relating to one or more aspects involving the mechanisms disclosed herein, prior to the detailed description presented below.

[0008] In one aspect, an antenna device includes: a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; a first conductive structure located on the upper surface of the glass substrate; a second conductive structure located on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV aperture defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV aperture.

[0009] In one aspect, a method of manufacturing an antenna device includes: forming a first conductive structure on an upper surface of a glass substrate, the glass substrate having the upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; forming a second conductive structure on the lower surface of the glass substrate; and forming a through-glass via (TGV) structure, the through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV hole, the first TGV hole being defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures, the plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

[0010] In one aspect, an electrical device includes one or more processors; and an antenna device coupled to the one or more processors, wherein the antenna device includes: a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; a first conductive structure located on the upper surface of the glass substrate; a second conductive structure located on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV hole defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

[0011] Based on the accompanying drawings and detailed description, other objects and advantages associated with the aspects disclosed herein will be apparent to those skilled in the art. Attached Figure Description

[0012] When considered in conjunction with the accompanying drawings, a more complete understanding of the various aspects of this disclosure and its many advantages therefrom will become better understood by referring to the following detailed description, which is presented for illustrative purposes only and does not constitute any limitation on this disclosure.

[0013] Figure 1A This is a simplified perspective view of an example on-glass antenna (AOG) die based on various aspects of this disclosure.

[0014] Figure 1B Based on all aspects of this disclosure Figure 1A A simplified cross-sectional view of a portion of an example AOG die.

[0015] Figure 1C An enlarged view of a through-glass via (TGV) structure according to various aspects of this disclosure is shown.

[0016] Figure 1D An enlarged view of the metallized groove structure according to various aspects of this disclosure is shown.

[0017] Figure 1E An enlarged view of the metallized TGV aperture structure according to various aspects of this disclosure is shown.

[0018] Figure 2AA top view of a glass substrate wafer according to various aspects of this disclosure is shown.

[0019] Figure 2B A top view of a glass substrate panel according to various aspects of this disclosure is shown.

[0020] Figure 3A This is a top view of a portion of a glass base substrate according to various aspects of this disclosure.

[0021] Figure 3B Based on all aspects of this disclosure Figure 3A A magnified top view of a portion of the glass base substrate.

[0022] Figure 3C This is an enlarged top view of a portion of the AOG die separated from the glass substrate according to various aspects of this disclosure.

[0023] Figure 4 This is a simplified top view of an AOG die according to various aspects of this disclosure, which shows another example configuration of connecting a conductive film on the sidewall of the recess to a ground reference level.

[0024] Figures 5A to 5N Simplified cross-sectional views illustrating the structure at various stages of manufacturing one or more AOG dies according to various aspects of this disclosure are shown.

[0025] Figure 6 Methods for manufacturing antenna devices according to various aspects of this disclosure are illustrated.

[0026] Figure 7 Mobile devices according to various aspects of this disclosure are illustrated.

[0027] Figure 8 Various electrical devices that can be incorporated into the antenna apparatus as described herein are illustrated according to various aspects of this disclosure.

[0028] By convention, the features depicted in the accompanying drawings may not be drawn to scale. Accordingly, for clarity, the dimensions of the depicted features may be arbitrarily enlarged or reduced. By convention, some drawings are simplified for clarity. Therefore, the drawings may not depict all components of a particular device or method. Furthermore, similar reference numerals are used throughout the specification and accompanying drawings to indicate similar features. Detailed Implementation

[0029] Various aspects of this disclosure are provided in the following description and accompanying drawings of various examples provided for illustrative purposes. Alternative aspects may be devised without departing from the scope of this disclosure. Additionally, well-known elements of this disclosure will not be described in detail or will be omitted so as not to obscure the relevant details of this disclosure.

[0030] Various aspects generally relate to an antenna device (e.g., an antenna-on-glass (AOG) die) including a plurality of metallized groove structures formed on the side of a glass substrate of the antenna device; and a method for forming an antenna device having metallized groove structures.

[0031] Specific aspects of the subject matter described in this disclosure can be implemented to achieve one or more of the following potential advantages. In some examples, the process for forming the metallized recess structure can be integrated with the process for forming the TGV structure, thus not significantly increasing the complexity of the manufacturing process. Meanwhile, the EMI shielding provided by the metallized recess structure can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth).

[0032] The terms “exemplary” and / or “example” are used herein to mean “serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” and / or “example” is not necessarily to be construed as superior to or better than other aspects. Similarly, the term “aspects of this disclosure” does not require that all aspects of this disclosure include the features, advantages, or modes of operation discussed.

[0033] Those skilled in the art will understand that any of the various techniques and arts can be used to represent the information and signals described below. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the following description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof, depending in part on the specific application, in part on the desired design, and in part on the corresponding technology, etc.

[0034] Furthermore, many aspects are described according to a sequence of actions to be performed by elements of, for example, a computing device. It will be appreciated that the various actions described herein can be performed by a particular circuit (e.g., an application-specific integrated circuit (ASIC)), by program instructions executed by one or more processors, or by a combination of both. Additionally, the sequence of actions described herein can be considered to be entirely embodied in any form of non-transitory computer-readable storage medium storing a corresponding set of computer instructions that, when executed, will cause or command the associated processor of the device to perform the functionality described herein. Therefore, various aspects of this disclosure can be embodied in a variety of different forms, all of which are contemplated within the scope of the claimed subject matter. Furthermore, for each aspect described herein, any corresponding form of any such aspect may be described herein as, for example, "a logical component configured to perform the described actions."

[0035] Figure 1AThis is a simplified perspective view of an example antenna-on-glass (AOG) die 100 according to various aspects of this disclosure. As a simplified perspective view for illustrating a non-limiting example, various features of the AOG die 100 may be shown. Figure 1A The details are simplified or not depicted. In some respects, the AOG die 100 can be incorporated into electrical devices such as music players, video players, entertainment units; navigation devices, communication devices, mobile devices, mobile phones, smartphones, personal digital assistants, fixed-location terminals, tablet computers, computers, wearable devices, laptop computers, servers, Internet of Things (IoT) devices, devices in motor vehicles, or other suitable devices.

[0036] like Figure 1A As shown, the AOG die 100 may include one or more antenna assemblies, such as antenna assemblies 101, 103, 105, 107, and 109 (in Figure 1, dashed lines indicate the boundaries between the antenna assemblies). In some respects, each of the antenna assemblies 101, 103, 105, 107, and 109 may share a similar configuration.

[0037] In some aspects, the AOG die 100 may include a glass substrate 110 and a metallization structure 120 located beneath the glass substrate 110. The glass substrate 110 may have an upper surface 112, a lower surface 114, and a side portion 116 surrounding the glass substrate 110 and connecting the upper surface 112 and the lower surface 114. In some aspects, a first conductive layer may be disposed on the upper surface 112 and may include various conductive structures, such as a conductive structure 132 configured as an antenna element (e.g., a patch antenna in this example) and a conductive structure 134 configured as a conductive path for the antenna assembly 101.

[0038] In some aspects, the second conductive layer may be disposed on the lower surface 114 as part of the metallization structure 120, and may include various conductive structures (e.g., Figure 1B Conductive structures 122 and 124 in the middle, Figure 1A (Not shown in the image). In some aspects, a first insulating layer may be present, disposed on the upper surface 112 of the glass substrate 110 and covering at least a portion of the conductive structure on the upper surface 112 of the glass substrate 110 (e.g., Figure 1B Insulation layer 162, Figure 1A (Not shown in the image). In some aspects, a second insulating layer may be present, disposed on the lower surface 114 of the glass substrate 110 and covering at least a portion of the conductive structure on the lower surface 114 of the glass substrate 110 (e.g., Figure 1B Insulation layer 164, Figure 1A(Not shown in the image). In some aspects, the second insulating layer 164 may be part of the metallization structure 120. In some aspects, the metallization structure 120 may include one or more additional insulating layers, conductive traces, conductive vias, conductive terminal structures, or any combination thereof. In some aspects, the first insulating layer 162 and the second insulating layer 164 may be interlayer dielectric layers (ILDs).

[0039] In some aspects, the AOG die 100 may include through-glass via (TGV) structures (e.g., TGV structures 142 and 144 of antenna assembly 101) that electrically couple one or more conductive structures on the upper surface 112 to one or more conductive structures on the lower surface 114. In some aspects, each TGV structure (e.g., TGV structure 142 or TGV structure 144) may include a TGV aperture and at least a first conductive film located on the sidewall of the TGV aperture (e.g., Figure 1B and Figure 1C The conductive film 172 in the middle.

[0040] Side portion 116 may include a plurality of metallized recess structures 152. In some aspects, the plurality of metallized recess structures 152 may have recess sidewalls connecting the upper surface 112 and the lower surface 114, and each recess of the plurality of metallized recess structures 152 may have a shape corresponding to a portion of the TGV aperture. In some aspects, a plurality of second conductive films (e.g., Figure 1B The conductive film 174 in Figure 1A The layer depicted as a shadow layer can be disposed on the groove sidewalls of multiple metallized groove structures 152.

[0041] Additionally, the AOG die 100 may include one or more metallized TGV aperture structures 154 extending through the glass substrate 110. In some aspects, at least a portion of the one or more metallized TGV aperture structures 154 may be defined along the boundary between antenna assemblies 101, 103, 105, 107, and 109. In some aspects, each of the one or more metallized TGV aperture structures 154 may be associated with a second conductive film (e.g., Figure 1B Corresponding to the TGV hole of the conductive film 176 in the middle, the second conductive film (similar to the conductive film of the metallized groove structure 152) is disposed on the sidewall of the TGV hole.

[0042] Figure 1B Based on all aspects of this disclosure Figure 1A A simplified cross-sectional view of a portion of an example AOG die 100 (e.g., corresponding to antenna assembly 101 and a portion of antenna assembly 103). Figure 1B In, with Figure 1A Components that are identical or similar to those in the figures are given the same reference numerals, and their detailed descriptions may be omitted.

[0043] exist Figure 1B In the diagram, the first insulating layer 162 is shown as a dashed line, indicating that the first insulating layer 162 is not present. Figure 1A It is depicted in the middle. Moreover, as a simplified sectional view, it can be shown in the middle. Figure 1B This simplifies the embedding or placement of various conductive traces, vias, and / or conductive terminal structures on the metallized structure 120. In some aspects, the first insulating layer 162 or the second insulating layer 164 may comprise silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0044] like Figure 1B As shown, the metallized structure 120 may further include conductive terminal structures 182 and 184. In some aspects, conductive terminal structure 182 may be electrically coupled to conductive structure 124 through an opening in the second insulating layer 164. In some aspects, conductive terminal structure 184 may be electrically coupled to conductive structure 122 through another opening in the second insulating layer 164. In some aspects, as a non-limiting example, each of conductive terminal structures 182 and 184 may correspond to solder bumps, copper pillar bumps, or microsphere bumps.

[0045] like Figure 1B As shown, the second conductive layer may include a conductive structure 122 electrically coupled to the conductive structure 132 via a TGV structure 142. The second conductive layer may also include a conductive structure 124, which is a ground conductive structure electrically coupled to a ground reference level and may be configured as a grounding panel for an antenna element formed by the conductive structure 132.

[0046] Figure 1C An enlarged view of the through-glass via (TGV) structure 142 according to various aspects of this disclosure is shown. Figure 1B and Figure 1C As shown, in some aspects, the first conductive film 172 of each TGV structure 142 may include a first portion 172a and a second portion 172b, wherein the first portion 172a is located between the sidewall of the TGV aperture and the second portion 172b. In some aspects, a dry film dielectric 173 may fill the space within the TGV structure 142 surrounded by the first conductive film 172.

[0047] Figure 1D An enlarged view of the metallized groove structure 152 according to various aspects of this disclosure is shown. (See figure) Figure 1B and Figure 1D As shown, in some aspects, the metallized groove structure 152 may include a second conductive film 174 disposed on the respective groove sidewall of the metallized groove structure 152. Figure 1EAn enlarged view of the metallized TGV hole structure 154 according to various aspects of this disclosure is shown. Figure 1B and Figure 1E As shown, in some aspects, the metallized TGV via structure 154 may include a second conductive film 176 disposed on the respective TGV via sidewall of the metallized TGV via structure 154. In some aspects, the second conductive films 174 and 176 may be electrically coupled to a grounded conductive structure, such as conductive structure 124.

[0048] In some aspects, a first portion 172a of the first conductive film 172 and second conductive films 174 and 176 of each metallized groove structure 152 or metallized TGV aperture structure 154 may correspond to a seed conductive film and may be made of a first material (such as titanium, copper, or a combination thereof). In some aspects, a second portion 172b of the first conductive film 172 may correspond to an additional conductive film on the seed layer (e.g., by deposition or electroplating) and may be made of a second material such as copper. Therefore, in some aspects, the thickness of the first conductive film 172 may be greater than the thickness of the second conductive films 174 and 176. In some aspects, each of the conductive structures on the upper surface 112 and the conductive structures on the lower surface 114 may also include a first portion made of the first material and corresponding to the seed layer, and a second portion made of the second material and corresponding to the additional conductive film.

[0049] In some aspects, the second conductive film 174 on the recess sidewalls of the plurality of metallized recess structures 152 can be electrically coupled to a ground reference level, such that the second conductive film 174 on the recess sidewalls of the plurality of metallized recess structures 152 can be configured as a shielding structure for shielding the antenna elements of the AOG die 100 from other components outside the AOG die. In some aspects, the second conductive film 176 on the sidewalls of the metallized TGV aperture structure 154 can be electrically coupled to a ground reference level, such that the second conductive film 174 on the sidewalls of the metallized TGV aperture structure 154 can be configured as a shielding structure for shielding the individual antenna elements of the AOG die 100 from each other.

[0050] In some non-limiting examples, the conductive structure 132 may be configured as a patch antenna operating in the mmWave frequency range. In these examples, the thickness of the glass substrate 110 may range from 0.7 mm to 1.0 mm. In these examples, the diameter of the TGV aperture used to form the metallized recess structure 152 may range from 80 μm to 150 μm. In these examples, the spacing between two adjacent metallized recess structures may range from 80 μm to 150 μm. In some aspects, the spacing between two adjacent metallized recess structures may be set to be approximately the same as the diameter of the TGV aperture used to form the metallized recess structure (e.g., within a 5% tolerance).

[0051] In some respects, EMI shielding provided by the metallized recess structure and / or metallized TGV aperture structure can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth). In some respects, EMI shielding can effectively confine electromagnetic energy within the antenna assembly and / or reduce electromagnetic interference from adjacent components outside the antenna assembly. Therefore, any degradation in the directivity and gain of each antenna assembly caused by EMI can be reduced, thus improving antenna throughput and / or bandwidth. In some examples, compared to a similar AOG die configuration without the metallized recess structure 152 on its sides, such as Figures 1A to 1E The shielding structure discussed herein can increase antenna gain by at least 1 dB, increase throughput by at least 5%, and / or increase bandwidth by 10%.

[0052] Figure 2A A top view of a glass substrate wafer 210 according to various aspects of the present disclosure is shown. In some aspects, the glass substrate 110 of the AOG die 100 may be based on a glass pedestal substrate in the form of a glass substrate wafer 210. In some aspects, the glass substrate wafer 210 may be used to form a plurality of antenna assemblies, wherein five antenna assemblies 212 may correspond to the AOG die 100.

[0053] Figure 2B A top view of a glass substrate panel 220 according to various aspects of the present disclosure is shown. In some aspects, the glass substrate 110 of the AOG die 100 may be based on a glass pedestal substrate in the form of the glass substrate panel 220. In some aspects, the glass substrate panel 220 may be used to form a plurality of antenna assemblies, wherein five antenna assemblies 222 may correspond to the AOG die 100.

[0054] Figure 3A It is a glass base substrate according to various aspects of this disclosure (e.g., Figure 2A Glass substrate wafer 210 or Figure 2B A top view of a portion 300 of the glass substrate panel 220. Each antenna assembly (not labeled) in the portion 300 defined by the dashed boundary line may correspond to an antenna assembly formed in the glass substrate. In some aspects, the AOG die (e.g., AOG die 100) can be formed by performing a splitting process to separate the AOG die (e.g., comprising five consecutive antenna assemblies) from the glass substrate.

[0055] Figure 3B It is a portion 310 of the glass substrate according to various aspects of this disclosure (which is) Figure 3AA magnified top view of a portion of section 300. In some aspects, section 310 shows an AOG die (e.g., AOG die 100) that is still part of the glass substrate, wherein dashed lines 312, 314, and 316 define three boundaries of the AOG die, and dashed line 318 defines the boundary between two antenna assemblies (e.g., antenna assembly 101 and antenna assembly 103) of the AOG die. A plurality of metallized TGV aperture structures 322 may be formed along boundary line 312; a plurality of metallized TGV aperture structures 324 may be formed along boundary line 314; a plurality of metallized TGV aperture structures 326 may be formed along boundary line 316; and a plurality of metallized TGV aperture structures 328 may be formed along boundary line 318.

[0056] Figure 3C Based on various aspects of this disclosure, and glass substrate (such as...) Figure 3A and Figure 3B The image shows an enlarged top view of a portion of an AOG die (e.g., AOG die 100) separated from the glass substrate wafer or glass substrate panel shown. In some aspects, to form the AOG die 100, it is possible to... Figure 3B A dicing process is performed on the glass substrate shown to dicing along... Figure 3B The boundary lines 312, 314, and 316 depicted are cut. In some aspects, by performing a splitting process that cuts through the metallized TGV hole structures 322, 324, and 326 to separate the AOG die 100 from the glass substrate, the remaining portions of the metallized TGV hole structures 322, 324, and 326 (remaining together with the AOG die) become the metallized recess structure 152 on the side of the glass substrate of the AOG die 100. In some aspects, the metallized TGV hole structure 328 remains intact and becomes the metallized TGV hole structure 154.

[0057] like Figures 3A to 3C As shown, when the AOG die 100 is still part of the glass substrate, the plurality of metallized groove structures 152 of the AOG die 100 on which the conductive film 176 is disposed may initially have a form similar to the metallized TGV hole structure 154 having a conductive film 174 on the sidewalls. The metallized TGV hole structure (with a conductive film on the sidewall) on the edge (e.g., side) of the AOG die 100 may become the metallized groove structure 152 (with a conductive film on the groove sidewall) after a separation process that separates the AOG die 100 from the rest of the glass substrate.

[0058] In some aspects, the grounding conductive structure may be based on a second conductive layer on the lower surface of the glass substrate (e.g., Figure 1B (as shown in the example), or based on a first conductive layer on the upper surface of a glass substrate, or any combination thereof. Figure 4This is a simplified top view of an AOG die 400 according to various aspects of the present disclosure, which shows another example configuration of connecting a conductive film 422 on a recessed sidewall of the AOG die 400 to a ground reference level based on a ground conductive structure 430 on the upper surface of the glass substrate 410 of the AOG die 400.

[0059] like Figure 4 As shown, the AOG die 400 can be compared to an example where the AOG die includes only a single antenna element. Figure 4 For clarity, various conductive structures on the upper surface of the glass substrate 410 are not depicted except for the ground conductive structure 430. In some aspects, the AOG die 400 may be implemented based on the AOG structure illustrated by the example AOG die 100, and detailed descriptions of various components may be simplified or omitted.

[0060] like Figure 4 As shown, the AOG die 400 may include sides on which a plurality of metallized recess structures are formed. The metallized recess structures include corresponding conductive films 422 on the recess sidewalls. As a non-limiting example, the AOG die 400 also includes TGV structures 442, 444, 446, 448, 452, and 454. In some aspects, the TGV structures 442, 444, 446, 448, 452, and 454 may be electrically coupled to one or more conductive structures on the upper surface (not shown) of the glass substrate 410 and may be configured to carry power or signals. In some aspects, the TGV structures 452 and 454 may be configured to carry a ground reference level through one or more conductive terminals formed beneath the glass substrate.

[0061] In this example, the grounding conductive structure 430 formed on the upper surface of the glass substrate 410 may include a conductive ring structure 432 electrically coupling the conductive films 422 of the metallized groove structure together. The grounding conductive structure 430 may also include a conductive structure 434 connecting the conductive ring structure 432 to the TGV structure 452; and a conductive structure 436 connecting the conductive ring structure 432 to the TGV structure 454.

[0062] In some respects, as another example and similar Figures 1A to 1E As illustrated, a grounding conductive structure can be formed beneath the glass substrate as a ground reference panel for electrically connecting all conductive films 422 of the metallized groove structure. In some aspects, as another example, a grounding conductive structure can be formed beneath the glass substrate in a form similar to the grounding conductive structure 430 that electrically connects all conductive films 422 of the metallized groove structure based on a conductive ring structure.

[0063] Figures 5A to 5NSimplified cross-sectional views illustrating the structure at various stages of manufacturing one or more AOG dies (e.g., having a structure based on AOG die 100) according to various aspects of this disclosure are shown. Figures 5A to 5N exemplified with Figures 1A to 1E Components that are the same or similar to those in the figures are given the same reference numerals, and their detailed descriptions may be omitted.

[0064] like Figure 5A As shown, a structure 500A can be provided, which corresponds to the glass substrate 510. In some aspects, the glass substrate 510 can be... Figures 2A to 2B The glass substrate wafer 210 or glass substrate panel 220 shown corresponds to this.

[0065] like Figure 5B As shown, structure 500B can be formed by forming a plurality of TGV holes 512 within the glass substrate 510. In some aspects, the TGV holes 512 may take the form of hollow pillars or cylinders between the upper surface 514 and the lower surface 516 of the glass substrate 510. In some aspects, the TGV holes 512 may be formed by mechanical drilling or laser drilling.

[0066] like Figure 5C As shown, structure 500C can be formed based on structure 500B by forming a seed conductive film 522 (depicted as thick line segments) on the upper surface 514 and lower surface 516 of the glass substrate 510 and on the sidewalls of each of the plurality of TGV holes 512. In some aspects, the seed conductive film 522 may be made of a first conductive material, which may include titanium, copper, or combinations thereof. In some aspects, the seed conductive film 522 may be formed based on a physical vapor deposition (PVD) process.

[0067] like Figure 5DAs shown, structure 500D can be formed based on structure 500C by forming a photoresist pattern 524 on the upper surface 514 of the glass substrate 510 and a photoresist pattern 526 on the lower surface 516 of the glass substrate 510. In some aspects, the photoresist patterns 524 and 526 may cover a portion of the seed conductive film 522 from which no additional conductive film will form. In some aspects, the photoresist patterns 524 and 526 may cover TGV holes (e.g., TGV holes 512a and 512b) corresponding to the boundaries of the AOG die and / or the edges of the glass substrate 510 corresponding to the boundaries of the AOG die. Therefore, a first seed pattern can be defined based on a first portion (e.g., not covered or exposed by the seed conductive film 522) of the seed conductive film 522 on the upper surface of the glass substrate 510. Furthermore, a second seed pattern can be defined based on a second portion of the seed conductive film 522 on the lower surface of the glass substrate 510 (e.g., not covered or exposed by the seed conductive film 522).

[0068] like Figure 5E As shown, structure 500E can be formed based on structure 500D by forming an additional conductive film 532 on the first seed pattern, the second seed pattern, and the third portion of the seed conductive film on the sidewall of the TGV hole 512c. In some aspects, the additional conductive film 532 can be formed by deposition or electroplating. In some aspects, the additional conductive film 532 can be made of a second material including copper. In some aspects, the TGV hole 512c, together with the corresponding seed conductive film 522 and the additional conductive film 532 formed on its sidewall, can be... Figure 1B This corresponds to the TGV structure 142 in the text.

[0069] In some respects, the first seed pattern and the first part of the additional conductive film 532 on the first seed pattern can be coupled with... Figure 1B This corresponds to the conductive structure 132 in the diagram. In some aspects, the conductive structure 132 can be configured as a patch antenna.

[0070] In some respects, the second part of the second seed pattern and the additional conductive film 532 on the second seed pattern can be connected with... Figure 1B The conductive structures 122 and 124 in the TGV hole 512c correspond to each other. In some aspects, the third part of the seed conductive film on the sidewall of the TGV hole 512c can be connected to... Figure 1B The first portion 172a of the first conductive film 172 in the TGV hole 512c corresponds to the third portion of the seed conductive film on the third portion of the additional conductive film on the sidewall of the TGV hole 512c. Figure 1B The second portion 172b of the first conductive film 172 corresponds to this. Furthermore, the fourth portion of the seed conductive film on the sidewall of each of the TGV holes 512a and 512b can be... Figure 1BThe second conductive film 714 on the groove sidewall of the multiple metallized groove structures 152 in the middle corresponds to the groove structure 152.

[0071] like Figure 5F As shown, structure 500F can be formed based on structure 500E by removing photoresist patterns 524 and 526.

[0072] like Figure 5G As shown, structure 500G can be formed based on structure 500F by forming a photoresist pattern 534 on the upper surface 514 and a photoresist pattern 536 on the lower surface 516 of the glass substrate 510. In some aspects, the photoresist patterns 534 and 536 may cover the TGV holes (e.g., TGV holes 512a and 512b) corresponding to the boundaries of the AOG die and / or the edges of the glass substrate 510 (e.g., edge 538) corresponding to the boundaries of the AOG die. In some aspects, a portion of the seed conductive film 522 that has not yet formed an additional conductive film will be exposed at this stage.

[0073] like Figure 5H As shown, structure 500H can be formed based on structure 500G by removing the exposed portion of seed conductive film 522 using photoresist patterns 534 and 536 as masks. Although the additional conductive film 532 can be partially removed when removing the exposed portion of seed conductive film 522, since the additional conductive film 532 is much thicker than seed conductive film 522, the desired conductive structure based on additional conductive film 532 can be slightly removed without affecting the functionality of the desired conductive structure. That is, based on its thickness, additional conductive film 532 can also be used as a mask to withstand the removal of the exposed portion of seed conductive film 522.

[0074] like Figure 5I As shown, structure 500I can be formed based on structure 500H by removing photoresist patterns 534 and 536.

[0075] like Figure 5J As shown, structure 500J can be formed based on structure 500I by filling the remaining portion of TGV aperture 512c with dry film dielectric 542, the remaining portion corresponding to the space within the TGV structure formed based on TGV aperture 512c and surrounded by a first conductive film on the sidewall of the TGV structure. In some aspects, dry film dielectric 542 can be... Figure 1B The dry film dielectric 173 in the text corresponds to this.

[0076] like Figure 5KAs shown, structure 500K can be formed based on structure 500J by forming a first insulating layer 552 on the upper surface of the glass substrate 510 and covering at least a portion of the first conductive structure on the upper surface. In some aspects, the first insulating layer 552 may be combined with... Figure 1B This corresponds to the first insulating layer 162 in the middle.

[0077] like Figure 5L As shown, structure 500L can be formed based on structure 500K by forming a second insulating layer 554 on the lower surface of the glass substrate 510 and covering at least a portion of the second conductive structure on the lower surface. In some aspects, the second insulating layer 554 may be combined with... Figure 1B The second insulating layer 164 corresponds to this.

[0078] In some aspects, the first insulating layer 552 (162) or the second insulating layer 554 (164) may comprise silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0079] like Figure 5M As shown, structure 500M can be formed based on structure 500L by forming conductive terminal structures 562 and / or other conductive traces or conductive vias to electrically couple conductive structures on the lower surface of the glass substrate 510 through corresponding openings in the second insulating layer 554. In some aspects, each conductive terminal structure in the conductive terminal structure may correspond to a solder bump, a copper pillar bump, or a microsphere bump. In some aspects, conductive terminal structure 562 may correspond to... Figure 1B The conductive terminal structure in the middle corresponds to 182 or 184.

[0080] like Figure 5N As shown, multiple AOG dies 500Na, 500Nb, and 500Nc can be formed based on structure 500M by performing a segmentation process on structure 500M. Each of the AOG dies 500Na, 500Nb, and 500Nc can correspond to AOG die 100 and may include, for example, Figures 1A to 1E The corresponding components are illustrated in the diagram. In some aspects, the dicing process can be performed by cutting along the boundaries of the various AOG dies depicted as dashed lines 572 and 574, based on laser ablation cutting, saw blade cutting, or dicing and splitting. For example... Figure 5N and Figures 3B to 3C As illustrated, after splitting, a portion of the seed conductive film 522 remains on the sidewalls and edges 538 of the separated TGV holes 512a and 512b. These remaining portions of the seed conductive film 522 may form a metallized groove structure (e.g., metallized groove structure 152) configured to provide EMI shielding.

[0081] Figure 6 Examples of antenna devices (such as antennas) according to various aspects of this disclosure are illustrated. Figures 1A to 1B AOG die 100 in Figure 4 AOG die 400 and / or Figure 5N Method 600 for AOG die (500Na, 500Nb, and 500Nc). In some aspects, Figures 5A to 5N The structure of various stages of manufacturing an antenna device (e.g., an AOG die) according to method 600 can be described.

[0082] At operation 610, a first conductive structure (e.g., conductive structure 132) may be formed on the upper surface of a glass substrate (e.g., glass substrate 110). In some aspects, the glass substrate has an upper surface (e.g., upper surface 112), a lower surface (e.g., lower surface 114), and a side portion (e.g., side portion 116) surrounding the glass substrate and connecting the upper and lower surfaces. In some aspects, the side portion may include a plurality of metallized recess structures (e.g., metallized recess structure 152). In some aspects, the plurality of metallized recess structures have recess sidewalls connecting the upper and lower surfaces and a plurality of second conductive films respectively on the recess sidewalls of the plurality of metallized recess structures. In some aspects, each recess sidewall of the plurality of metallized recess structures has a shape corresponding to a portion of the TGV aperture.

[0083] At operation 620, a second conductive structure (e.g., conductive structure 122) may be formed on the lower surface of the glass substrate. In some aspects, a ground conductive structure (e.g., conductive structure 124 and / or ground conductive structure 430) may be formed on the upper surface, the lower surface of the glass substrate, or any combination thereof. In some aspects, a plurality of second conductive films are electrically coupled to the ground conductive structure.

[0084] At operation 630, a TGV structure (e.g., TGV structure 142) may be formed, wherein the TGV structure may include a first conductive film (e.g., conductive film 172) on the sidewall of the first TGV aperture. In some aspects, the first TGV aperture may be defined within a glass substrate and extend from the upper surface of the glass substrate to the lower surface of the glass substrate. In some aspects, the first conductive film may be configured to couple a first conductive structure to a second conductive structure.

[0085] In some aspects, method 600 may include forming a plurality of TGV holes in a glass substrate corresponding to a glass substrate wafer or a glass substrate panel, the plurality of TGV holes including a first TGV hole and a plurality of second TGV holes, the glass substrate of the antenna device being based on the glass substrate; forming a plurality of metallized TGV hole structures based on the plurality of second TGV holes; and performing a partitioning process of cutting through the plurality of metallized TGV hole structures to separate the antenna device from the glass substrate, the remaining portion of the plurality of metallized TGV hole structures becoming a plurality of metallized groove structures on the side of the glass substrate of the antenna device.

[0086] In some aspects, method 600 may further include forming a seed conductive film on an upper surface of a glass substrate, on a lower surface of a glass substrate, and on the sidewall of each of a plurality of TGV holes; defining a first seed pattern based on a first portion of the seed conductive film on the upper surface of the glass substrate; defining a second seed pattern based on a second portion of the seed conductive film on the lower surface of the glass substrate; and forming an additional conductive film on the first seed pattern, on the second seed pattern, and on a third portion of the seed conductive film on the sidewall of the first TGV hole.

[0087] In some aspects, a first portion of the first seed pattern and the additional conductive film on the first seed pattern corresponds to a first conductive structure. In some aspects, a second portion of the second seed pattern and the additional conductive film on the second seed pattern corresponds to a second conductive structure. In some aspects, the first conductive film includes a first portion of a third portion of a seed conductive film on the sidewall of a first TGV aperture and a second portion of a third portion of an additional conductive film on the third portion of the seed conductive film on the sidewall of the first TGV aperture. In some aspects, a fourth portion of the seed conductive film on the sidewall of each of the plurality of TGV apertures corresponds to a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures.

[0088] In some aspects, the seed conductive film may be made of a first material including titanium, copper, or combinations thereof. In some aspects, the additional conductive film may be made of a second material including copper. In some aspects, method 600 may further include forming a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0089] In some aspects, method 600 may further include forming a first insulating layer on the upper surface and covering at least a portion of the first conductive structure; and forming a second insulating layer on the lower surface and covering at least a portion of the second conductive structure. In some aspects, the first or second insulating layer may comprise silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0090] In some aspects, method 600 may further include forming a metallization structure beneath the glass substrate, the metallization structure comprising at least a second insulating layer and a second conductive structure. In some aspects, the metallization structure may further include a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer. In some aspects, the conductive terminal structure corresponds to solder bumps, copper pillar bumps, or microsphere bumps.

[0091] The technical advantages of method 600 can be correlated with the manufacture of antenna devices (e.g., AOG dies) including multiple metallized recess structures formed on the sides of a glass substrate of the device. The process for forming the metallized recess structures can be integrated with the process for forming the TGV structure, thus not significantly increasing the complexity of the manufacturing process. Simultaneously, the EMI shielding provided by the metallized recess structures can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth).

[0092] Figure 7 A mobile device 700 according to various aspects of this disclosure is illustrated. In some aspects, the mobile device 700 may be implemented by including one or more antenna devices (e.g., AOG dies) as disclosed herein.

[0093] In some aspects, the mobile device 700 can be configured as a wireless communication device. As shown, the mobile device 700 includes a processor 701. The processor 701 is communicatively coupled to a memory 732 via a link, which may be a die-to-die or chip-to-chip link. The mobile device 700 also includes a display 728 and a display controller 726, wherein the display controller 726 is coupled to the processor 701 and the display 728. The mobile device 700 may include an input device 730 (e.g., a physical or virtual keyboard), a power supply 744 (e.g., a battery), a speaker 736, a microphone 738, and a wireless antenna 742 (which may be combined with antenna arrangements (e.g., AOG dies) according to various aspects described in this disclosure). In some aspects, the power supply 744 may directly or indirectly provide power voltages for some or all of the components of the mobile device 700.

[0094] In some respects, Figure 7The processor 701 may include a decoder / decoder (codec) 734 (e.g., an audio and / or voice codec) coupled to the processor 701; a speaker 736 and a microphone 738 coupled to the codec 734; and a wireless circuit 740 (which may include a modem, RF circuitry, filters, etc.) coupled to the wireless antenna 742 and the processor 701. In some aspects, one or more of the processor 701 (e.g., a system-on-a-chip, application processor (AP)), display controller 726, memory 732, codec 734, and wireless circuit 740 (e.g., a baseband interface) may include an IC device packaged in an IC package.

[0095] It should be noted that, although Figure 7 Mobile device 700 is described, but similar architectures can be used to implement devices including set-top boxes, music players, video players, entertainment units, navigation devices, personal digital assistants (PDAs), fixed location data units, computers, laptops, tablets, communication devices, mobile phones, or other similar devices.

[0096] Figure 8 Various electrical devices that can be incorporated into the antenna arrangements described herein according to various aspects of this disclosure are illustrated. For example, electrical devices on mobile phone device 810, laptop computer device 820, fixed location terminal device 830, wearable device 840, or motor vehicle 850 may respectively include antenna arrangements 812, 822, 832, 842, and 852 (e.g., in conjunction with those based on Figures 1 to 852 above). Figure 7 The example described corresponds to the AOG die. Figure 8 The devices 810, 820, 830, and 840, as well as vehicle 850, illustrated herein are merely exemplary. Other devices or apparatuses that may feature the antenna arrangement described herein may include, but are not limited to, a group of devices including: mobile devices, handheld personal communication system (PCS) units, portable data units (such as personal digital assistants), GPS-enabled devices, navigation devices, set-top boxes, music players, video players, entertainment units, fixed location data units (such as meter reading devices), communication devices, smartphones, tablet computers, computers, wearable devices (e.g., watches, glasses), Internet of Things (IoT) devices, servers, routers, electrical equipment implemented in motor vehicles (e.g., autonomous vehicles), or any other device or any combination thereof that stores or retrieves data or computer instructions.

[0097] As can be seen in the detailed description above, different features are grouped together in the examples. This manner of disclosure should not be construed as an intention to have more features than those explicitly mentioned in each clause. Rather, the various aspects of this disclosure may include fewer features than those in the individual example clauses disclosed. Therefore, the following clauses should be regarded accordingly as incorporated into the description, where each clause may serve as a separate example. Although each dependent clause may refer in the clause to a specific combination with one of the other clauses, the aspect of that dependent clause is not limited to that specific combination. It should be understood that other example clauses may also include combinations of aspects of a dependent clause with the subject matter of any other dependent or independent clause, or combinations of any feature with other dependent and independent clauses. The various aspects disclosed herein explicitly include these combinations unless explicitly stated or readily inferred that a particular combination is not intended for use (e.g., contradictory aspects, such as defining an element as both an electrical insulator and an electrical conductor). Furthermore, it is contemplated that aspects of a clause may be included in any other independent clause, even if that clause does not directly depend on the independent clause.

[0098] Specific implementation examples are described in the following numbered clauses:

[0099] Clause 1. An antenna device comprising: a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; a first conductive structure located on the upper surface of the glass substrate; a second conductive structure located on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV aperture defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV aperture.

[0100] Clause 2. The antenna device according to Clause 1, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

[0101] Clause 3. The antenna device according to any one of Clauses 1 to 2, the antenna device further comprising: a ground conductive structure located on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof, wherein the plurality of second conductive films are electrically coupled to the ground conductive structure.

[0102] Clause 4. The antenna device according to any one of Clauses 1 to 3, wherein: the plurality of second conductive films are made of a first material, the first conductive film comprising a first portion and a second portion, the first portion being located between the sidewall of the first TGV aperture and the second portion, the first portion being made of the first material, and the second portion being made of a second material.

[0103] Clause 5. The antenna device according to Clause 4, wherein: the first material comprises titanium, copper, or a combination thereof, and the second material comprises copper.

[0104] Clause 6. The antenna device according to any one of Clauses 4 to 5, wherein the first conductive structure or the second conductive structure comprises at least a third portion made of the first material and a fourth portion made of the second material.

[0105] Clause 7. The antenna device according to any one of Clauses 1 to 6, the antenna device further comprising: a first insulating layer disposed on the upper surface and covering at least a portion of the first conductive structure; and a second insulating layer disposed on the lower surface and covering at least a portion of the second conductive structure.

[0106] Clause 8. The antenna device according to Clause 7, wherein the first insulating layer or the second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0107] Clause 9. The antenna device according to any one of Clauses 7 to 8, the antenna device further comprising: a metallization structure located below the glass substrate, the metallization structure comprising at least the second insulating layer and the second conductive structure, wherein the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0108] Clause 10. The antenna device according to Clause 9, wherein the conductive terminal structure corresponds to solder bumps, copper pillar bumps or microsphere bumps.

[0109] Clause 11. The antenna device according to any one of Clauses 1 to 10, the antenna device further comprising a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0110] Clause 12. The antenna device according to any one of Clauses 1 to 11, wherein the first conductive structure is configured as a patch antenna.

[0111] Clause 13. A method of manufacturing an antenna device, the method comprising: forming a first conductive structure on an upper surface of a glass substrate, the glass substrate having the upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; forming a second conductive structure on the lower surface of the glass substrate; and forming a through-glass via (TGV) structure, the through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV hole, the first TGV hole being defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures, the plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

[0112] Clause 14. The method according to Clause 13, the method further comprising: forming a grounded conductive structure on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof, wherein the plurality of second conductive films are electrically coupled to the grounded conductive structure.

[0113] Clause 15. The method according to any one of Clauses 13 to 14, the method further comprising: forming a plurality of TGV holes in a glass substrate corresponding to a glass substrate wafer or a glass substrate panel, the plurality of TGV holes including a first TGV hole and a plurality of second TGV holes, the glass substrate of the antenna device being based on the glass substrate; forming a plurality of metallized TGV hole structures based on the plurality of second TGV holes; and performing a cutting process to cut through the plurality of metallized TGV hole structures to separate the antenna device from the glass substrate, the remaining portion of the plurality of metallized TGV hole structures becoming the plurality of metallized groove structures on the side of the glass substrate of the antenna device.

[0114] Clause 16. The method according to Clause 15, the method further comprising: forming a seed conductive film on an upper surface of the glass substrate, on a lower surface of the glass substrate, and on a sidewall of each of the plurality of TGV holes; defining a first seed pattern based on a first portion of the seed conductive film on the upper surface of the glass substrate; defining a second seed pattern based on a second portion of the seed conductive film on the lower surface of the glass substrate; and forming an additional conductive film on the first seed pattern, on the second seed pattern, and on a third portion of the seed conductive film on the sidewall of the first TGV hole, wherein: the first seed pattern and the first The first portion of the additional conductive film on the seed pattern corresponds to the first conductive structure, the second seed pattern and the second portion of the additional conductive film on the second seed pattern correspond to the second conductive structure, the first conductive film includes a first portion of the third portion of the seed conductive film on the sidewall of the first TGV hole and a second portion of the third portion of the additional conductive film on the third portion of the seed conductive film on the sidewall of the first TGV hole, and a fourth portion of the seed conductive film on the sidewall of each of the plurality of TGV holes corresponds to the plurality of second conductive films respectively located on the sidewall of the groove of the plurality of metallized groove structures.

[0115] Clause 17. The method according to Clause 16, wherein: the seed conductive film is made of a first material comprising titanium, copper, or a combination thereof, and the additional conductive film is made of a second material comprising copper.

[0116] Clause 18. The method according to any one of Clauses 13 to 17, the method further comprising: forming a first insulating layer on the upper surface and covering at least a portion of the first conductive structure; and forming a second insulating layer on the lower surface and covering at least a portion of the second conductive structure.

[0117] Clause 19. The method according to Clause 18, wherein the first insulating layer or the second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0118] Clause 20. The method according to any one of Clauses 18 to 19, the method further comprising: forming a metallization structure under the glass substrate, the metallization structure comprising at least the second insulating layer and the second conductive structure, wherein the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0119] Clause 21. The method according to Clause 20, wherein the conductive terminal structure corresponds to solder bumps, copper pillar bumps or microsphere bumps.

[0120] Clause 22. The method according to any one of Clauses 13 to 21, the method further comprising forming a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0121] Clause 23. The method according to any one of Clauses 13 to 22, wherein the first conductive structure is configured as a patch antenna.

[0122] Clause 24. An electrical device comprising: one or more processors; and an antenna arrangement coupled to the one or more processors, wherein the antenna arrangement comprises: a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; a first conductive structure located on the upper surface of the glass substrate; a second conductive structure located on the lower surface of the glass substrate; and a through-glass via (TGV) structure including a first conductive film on a sidewall of a first TGV aperture defined within the glass substrate and extending from the upper surface of the glass substrate to the lower surface of the glass substrate, and the first conductive film being configured to couple the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized groove structures having groove sidewalls connecting the upper surface and the lower surface and a plurality of second conductive films respectively located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV aperture.

[0123] Clause 25. The electrical apparatus according to Clause 24, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

[0124] Clause 26. The electrical device according to any one of Clauses 24 to 25, wherein the antenna device further comprises: a grounding conductive structure located on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof, wherein the plurality of second conductive films are electrically coupled to the grounding conductive structure.

[0125] Clause 27. The electrical apparatus according to any one of Clauses 24 to 26, wherein: the plurality of second conductive films are made of a first material, the first conductive film comprising a first portion and a second portion, the first portion being located between the sidewall of the first TGV aperture and the second portion, the first portion being made of the first material, and the second portion being made of a second material.

[0126] Clause 28. The electrical equipment as described in Clause 27, wherein: the first material comprises titanium, copper, or a combination thereof, and the second material comprises copper.

[0127] Clause 29. The electrical equipment according to any one of Clauses 27 to 28, wherein the first conductive structure or the second conductive structure comprises at least a first portion made of the first material and a second portion made of the second material.

[0128] Clause 30. The electrical device according to any one of Clauses 24 to 29, wherein the antenna device further comprises: a first insulating layer disposed on the upper surface and covering at least a portion of the first conductive structure; and a second insulating layer disposed on the lower surface and covering at least a portion of the second conductive structure.

[0129] Clause 31. The electrical equipment pursuant to Clause 30, wherein the first or second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

[0130] Clause 32. The electrical device according to any one of Clauses 30 to 31, wherein the antenna device further comprises: a metallization structure located below the glass substrate, the metallization structure comprising at least the second insulating layer and the second conductive structure, wherein the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0131] Clause 33. The electrical equipment according to Clause 32, wherein the conductive terminal structure corresponds to solder bumps, copper pillar bumps or microsphere bumps.

[0132] Clause 34. The electrical equipment according to any one of Clauses 24 to 33, wherein the antenna device further comprises a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0133] Clause 35. The electrical equipment according to any one of Clauses 24 to 34, wherein the first conductive structure is configured as a patch antenna.

[0134] Clause 36. An electrical device pursuant to any one of Clauses 24 to 35, wherein the electrical device comprises at least one of: a music player, a video player, an entertainment unit; a navigation device, a communication device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed-location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an Internet of Things (IoT) device, or a device in a motor vehicle.

[0135] Those skilled in the art will understand that information and signals can be represented using any of a variety of different techniques and arts. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0136] Furthermore, those skilled in the art will understand that the various exemplary logic blocks, modules, circuits, and algorithm steps described in connection with the aspects disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, various exemplary components, blocks, modules, circuits, and steps have been described above in general terms of their functionality. Whether this functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in different ways for each specific application, but such specific implementation decisions should not be construed as departing from the scope of this disclosure.

[0137] The various exemplary logic blocks, modules, and circuits described in conjunction with the aspects disclosed herein can be implemented or executed using general-purpose processors, DSPs, ASICs, FPGAs, or other programmable logic devices, discrete gate or transistor logic units, discrete hardware components, or any combination thereof designed to perform the functions described herein. The general-purpose processor may be a microprocessor, but in alternative embodiments, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration.

[0138] The methods, sequences, and / or algorithms described in conjunction with the aspects disclosed herein can be embodied directly in hardware, in a software module executed by a processor, or a combination of both. The software module can reside in random access memory (RAM), flash memory, read-only memory (ROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disks, removable disks, CD-ROMs, or any other form of storage medium known in the art. Example storage media are coupled to a processor such that the processor can read information from and write information to the storage medium. Alternatively, the storage medium can be integral with the processor. The processor and storage medium can reside in an ASIC. The ASIC can reside in a user terminal (e.g., a UE). Alternatively, the processor and storage medium can reside as discrete components in the user terminal.

[0139] In one or more of the examples, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functionality may be stored as one or more instructions or code on or transmitted via a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, which includes any medium that facilitates the transfer of a computer program from one place to another. A storage medium may be any available medium accessible to a computer. By way of example, and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage devices, disk storage devices or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Furthermore, any connection is appropriately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included within the definition of a medium. As used herein, disks and optical discs include compact optical discs (CDs), laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while optical discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0140] While the foregoing disclosure illustrates exemplary aspects of this disclosure, it should be noted that various changes and modifications may be made herein without departing from the scope of this disclosure as defined by the appended claims. For example, the functions, steps, and / or actions of the method claims according to the aspects of this disclosure described herein need not be performed in any particular order. Furthermore, no component, function, action, or instruction described or claimed herein should be construed as critical or essential unless explicitly stated otherwise. Additionally, as used herein, the terms “set,” “group,” etc., are intended to include one or more of the stated elements. Moreover, as used herein, the terms “having,” “comprising,” “including,” etc., do not exclude the presence of one or more additional elements (e.g., element “having” A may also have B). Furthermore, the phrase “based on” is intended to mean “at least partially based on” unless otherwise explicitly stated. Furthermore, as used herein, the term “or” is intended to be open-ended when used in a series and is interchangeable with “and / or” unless otherwise expressly stated (e.g., if used in conjunction with “any” or “only one”), or these alternatives are mutually exclusive (e.g., “one or more” should not be interpreted as “one and more”). Additionally, although components, functions, actions, and instructions may be described or claimed in the singular, plural forms may also be considered unless expressly stated as limited to the singular. Therefore, as used herein, the articles “a,” “an,” “the,” and “the” are intended to include one or more of the described elements. Additionally, as used herein, the terms “at least one” and “one or more” include “one” component, function, action, or instruction that performs or is capable of performing the described or claimed functionality, and also include “two or more” components, functions, actions, or instructions that perform or are capable of performing the described or claimed functionality in combination.

Claims

1. An antenna device, the antenna device comprising: A glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; A first conductive structure is located on the upper surface of the glass substrate; A second conductive structure is located on the lower surface of the glass substrate; and A through-glass via (TGV) structure, the through-glass via (TGV) structure including a first conductive film on the sidewall of a first TGV hole, The first TGV aperture is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film is configured to couple the first conductive structure to the second conductive structure. The side portion includes a plurality of metallized groove structures, each having a groove sidewall connecting the upper surface and the lower surface and a plurality of second conductive films located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

2. The antenna device according to claim 1, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

3. The antenna device according to claim 1, further comprising: A grounded conductive structure, wherein the grounded conductive structure is located on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof. The plurality of second conductive films are electrically coupled to the grounded conductive structure.

4. The antenna device according to claim 1, wherein: The plurality of second conductive films are made of the first material. The first conductive film includes a first portion and a second portion, wherein the first portion is located between the sidewall of the first TGV aperture and the second portion. The first part is made of the first material, and The second part is made of a second material.

5. The antenna device according to claim 4, wherein: The first material includes titanium, copper, or a combination thereof, and The second material includes copper.

6. The antenna device according to claim 4, wherein the first conductive structure or the second conductive structure comprises at least a third portion made of the first material and a fourth portion made of the second material.

7. The antenna device according to claim 1, further comprising: A first insulating layer is disposed on the upper surface and covers at least a portion of the first conductive structure; and A second insulating layer is disposed on the lower surface and covers at least a portion of the second conductive structure.

8. The antenna device according to claim 7, wherein the first insulating layer or the second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, an organosilicon polymer dielectric, or any combination thereof.

9. The antenna device according to claim 7, further comprising: A metallized structure is located beneath the glass substrate, and the metallized structure includes at least a second insulating layer and a second conductive structure. The metallized structure further includes a conductive terminal structure, which is electrically coupled to the second conductive structure through an opening in the second insulating layer.

10. The antenna device according to claim 9, wherein the conductive terminal structure corresponds to a solder bump, a copper pillar bump, or a microsphere bump.

11. The antenna device according to claim 1, further comprising a dry film dielectric filling the space within the TGV structure surrounded by the first conductive film.

12. The antenna device of claim 1, wherein the first conductive structure is configured as a patch antenna.

13. A method for manufacturing an antenna device, the method comprising: A first conductive structure is formed on the upper surface of a glass substrate, the glass substrate having the upper surface, a lower surface and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; A second conductive structure is formed on the lower surface of the glass substrate; as well as A through-glass via (TGV) structure is formed, the through-glass via (TGV) structure including a first conductive film on the sidewall of a first TGV hole. The first TGV aperture is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film is configured to couple the first conductive structure to the second conductive structure. The side portion includes a plurality of metallized groove structures, each having a groove sidewall connecting the upper surface and the lower surface and a plurality of second conductive films located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

14. The method according to claim 13, further comprising: A grounded conductive structure is formed on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof. The plurality of second conductive films are electrically coupled to the grounded conductive structure.

15. The method according to claim 13, further comprising: A plurality of TGV holes are formed in a glass base substrate corresponding to a glass substrate wafer or a glass substrate panel, the plurality of TGV holes including a first TGV hole and a plurality of second TGV holes, and the glass substrate of the antenna device is based on the glass base substrate; Multiple metallized TGV hole structures are formed based on the multiple second TGV holes; as well as A partitioning process is performed to cut through the plurality of metallized TGV hole structures to separate the antenna device from the glass substrate. The remaining portions of the plurality of metallized TGV hole structures become the plurality of metallized groove structures on the side of the glass substrate of the antenna device.

16. The method according to claim 15, further comprising: A seed conductive film is formed on the upper surface of the glass substrate, on the lower surface of the glass substrate, and on the sidewall of each of the plurality of TGV holes. The first seed pattern is defined based on a first portion of the seed conductive film on the upper surface of the glass substrate. The second seed pattern is defined based on the second portion of the seed conductive film on the lower surface of the glass substrate. as well as An additional conductive film is formed on the first seed pattern, on the second seed pattern, and on the third portion of the seed conductive film on the sidewall of the first TGV hole. in: The first seed pattern and the first portion of the additional conductive film on the first seed pattern correspond to the first conductive structure. The second seed pattern and the second portion of the additional conductive film on the second seed pattern correspond to the second conductive structure. The first conductive film includes a first portion of the third portion of the seed conductive film on the sidewall of the first TGV aperture and a second portion of the third portion of the additional conductive film on the third portion of the seed conductive film on the sidewall of the first TGV aperture. The fourth portion of the seed conductive film on the sidewall of each of the plurality of TGV holes corresponds to the plurality of second conductive films located on the sidewall of the grooves of the plurality of metallized groove structures.

17. An electrical device, the electrical device comprising: One or more processors; and Antenna device, the antenna device being coupled to the one or more processors, The antenna device includes: A glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; A first conductive structure is located on the upper surface of the glass substrate; A second conductive structure, the second conductive structure being located on the lower surface of the glass substrate; and A through-glass via (TGV) structure, the through-glass via (TGV) structure including a first conductive film on the sidewall of a first TGV hole, The first TGV aperture is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film is configured to couple the first conductive structure to the second conductive structure. The side portion includes a plurality of metallized groove structures, each having a groove sidewall connecting the upper surface and the lower surface and a plurality of second conductive films located on the groove sidewalls of the plurality of metallized groove structures, each groove sidewall of the plurality of metallized groove structures having a shape corresponding to a portion of the TGV hole.

18. The electrical device according to claim 17, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

19. The electrical apparatus of claim 17, wherein the antenna device further comprises: A grounded conductive structure, wherein the grounded conductive structure is located on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof. The plurality of second conductive films are electrically coupled to the grounded conductive structure.

20. The electrical device of claim 17, wherein the electrical device comprises at least one of: a music player, a video player, an entertainment unit; a navigation device, a communication device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed-location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an Internet of Things (IoT) device, or a device in a motor vehicle.

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