Dynamic gas isolation device for a multi-channel gas inlet structure

Abstract

The application discloses a dynamic gas isolation device of a multi-channel gas inlet structure and belongs to the technical field of gas isolation.The dynamic gas isolation device comprises a projection optical box, a connecting pipeline, a wafer chamber, a semi-Laval nozzle and clean gas inlets.The projection optical box is located directly above the wafer chamber, and the internal cavity of the projection optical box is in sealed communication with the wafer chamber through the connecting pipeline.The semi-Laval nozzle is in sealed communication with the connecting pipeline at one end and is used for introducing clean gas at the other end.The clean gas inlets are arranged on the top of the wafer chamber and above the wafer in the wafer chamber.The multi-channel gas inlet structure of the semi-Laval type gas inlet channel combined with the multi-inlet ports above the wafer is adopted, the flow guiding property of the clean gas and the stability of the barrier formed are improved, and the diffusion of pollutants in the key area is inhibited.The position of the clean gas inlet and the flow distribution can be flexibly adjusted according to different application scenarios, the system adaptability and the clean gas utilization efficiency are improved, and the technical requirement for the control of pollutants is met.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of gas isolation, and particularly relates to a dynamic gas isolation device with a multi-channel gas inlet structure. BACKGROUND

[0002] In an environment with extremely high cleanliness requirements such as semiconductor manufacturing, precision optics, micro-nano processing, and especially in the field of extreme ultraviolet lithography (EUVL), the application of dynamic gas isolation technology is essential. The core function of this technology is to form a gas isolation layer through flowing clean gas to prevent the diffusion of pollutants released downstream to upstream key components, protect the optical system, and ensure stable operation of the system.

[0003] At present, existing dynamic gas lock devices usually adopt a single-direction gas inlet structure, that is, clean gas is introduced from one side of the device, enters the flow channel through a slit or nozzle, and forms a gas curtain or gas wall in a specific area through the high-speed flowing clean gas. Although the existing dynamic gas lock device has a certain gas isolation effect, it still has the following problems:

[0004] ① Uneven flow distribution: Since the traditional nozzle structure is mostly simple conical or straight pipe form, there is a lack of fine control of the flow field, which easily causes insufficient gas flow velocity in some areas, affecting the continuity and stability of the overall barrier.

[0005] ② Single structure and fixed direction: Clean gas is usually injected only from the two sides of the gas lock device, while the key area above the wafer as the pollutant release source often lacks a specially designed gas injection channel, resulting in ineffective blocking of pollutants in the upward path and a risk of backflow.

[0006] ③ Low gas utilization efficiency: The traditional gas inlet structure is difficult to achieve effective focusing and path control of gas flow, which easily leads to the diffusion of clean gas outside the target area, causing resource waste and increasing operating energy consumption.

[0007] ④ Poor adjustment capability: The gas flow and pressure control mode of the traditional gas inlet structure is single, and cannot flexibly adjust the gas distribution according to process requirements. SUMMARY

[0008] In view of the problems in the prior art, the application provides a dynamic gas isolation device with a multi-channel air inlet structure, which adopts a multi-channel air inlet structure in the form of a semi-Laval air inlet and combined with multiple air inlets above a wafer, so as to improve the flow guiding property of clean gas and the stability of a barrier formed, and inhibit the diffusion of pollutants in a key area; the semi-Laval air inlet is used to realize the acceleration and directional delivery of clean gas and form a dynamic gas isolation barrier, the clean gas sprayed by the multiple air inlets above the wafer is used to form a uniform and stable gas isolation layer, the barrier ability of clean gas to pollutants is strengthened, the position of the air inlets and the flow distribution can be flexibly adjusted according to different application scenarios, the system adaptability and clean gas utilization efficiency are improved, and the technical requirements of semiconductor photolithography and other high-cleanliness scenarios for pollution control are met.

[0009] In order to achieve the above-mentioned purpose, the application adopts the following technical scheme: a dynamic gas isolation device with a multi-channel air inlet structure, comprising a projection optical box, a connecting pipeline, a wafer chamber, a semi-Laval nozzle and clean gas air inlets; the projection optical box is located directly above the wafer chamber, and the internal cavity of the projection optical box is in sealed communication with the wafer chamber through the connecting pipeline; the semi-Laval nozzle is horizontally arranged, one end of the semi-Laval nozzle is in sealed communication with the connecting pipeline, and the other end of the semi-Laval nozzle is used to introduce clean gas; the clean gas air inlets are a plurality of, and the plurality of clean gas air inlets are arranged on the top of the wafer chamber and above the internal wafer.

[0010] The number of the semi-Laval nozzles is two, and the phase angle of the two semi-Laval nozzles on the connecting pipeline is 180°.

[0011] The pipe wall of the semi-Laval nozzle on the side of the Laval surface is downward.

[0012] The semi-Laval nozzle and the clean gas air inlets are both in a modular detachable and replaceable structure.

[0013] The plurality of clean gas air inlets are uniformly distributed in the circumferential direction.

[0014] The spacing between adjacent clean gas air inlets is 5mm-20mm.

[0015] The central axes of the nozzles of all the clean gas air inlets are inclined and the nozzles are all directed to the circumferential side of the wafer.

[0016] Each clean gas air inlet is independently provided with a flow adjusting mechanism.

[0017] The installation height of each clean gas air inlet is adjustable, and the spacing between the clean gas air inlet and the wafer is adjustable in the range of 5mm-30mm.

[0018] The cleaning gases include, but are not limited to, hydrogen, nitrogen, argon, and helium.

[0019] The beneficial effects of this invention are:

[0020] The dynamic gas isolation device with a multi-channel air intake structure of the present invention adopts a multi-channel air intake structure that combines a semi-Laval-type air intake channel with multiple air intakes above the wafer. This improves the flowability of clean gas and the stability of barrier formation, and inhibits the diffusion of pollutants in critical areas. The semi-Laval-type air intake channel is used to accelerate and directionally transport clean gas and form a dynamic gas isolation barrier. The clean gas injected from the multiple air intakes above the wafer is used to form a uniform and stable gas isolation layer, which enhances the ability of clean gas to block pollutants. The position and flow distribution of the air intakes can be flexibly adjusted according to different application scenarios, improving system adaptability and clean gas utilization efficiency, and meeting the technical requirements for pollutant control in high-cleanliness scenarios such as semiconductor lithography. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a dynamic gas isolation device with a multi-channel air intake structure according to the present invention;

[0022] In the diagram, 1—projection optics box, 2—connecting pipe, 3—wafer chamber, 4—semi-Laval nozzle, 5—cleaning gas inlet, and 6—wafer. Detailed Implementation

[0023] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0024] like Figure 1 As shown, a dynamic gas isolation device with a multi-channel air intake structure includes a projection optics box 1, a connecting pipe 2, a wafer chamber 3, a semi-Laval nozzle 4, and a clean gas inlet 5. The projection optics box 1 is located directly above the wafer chamber 3, and the internal cavity of the projection optics box 1 is sealed and connected to the wafer chamber 3 through the connecting pipe 2. The semi-Laval nozzle 4 is horizontally arranged, with one end sealed and connected to the connecting pipe 2, and the other end used to introduce clean gas. There are several clean gas inlets 5, all of which are located at the top of the wafer chamber 3 and above the wafer 6 inside.

[0025] The number of semi-Laval nozzles 4 is two, and the phase angle between the two semi-Laval nozzles 4 on the connecting pipe 2 is 180°.

[0026] The Laval-shaped side wall of the semi-Laval nozzle 4 faces downwards.

[0027] Both the semi-Laval nozzle 4 and the clean gas inlet 5 adopt a modular, detachable, and replaceable structure.

[0028] The plurality of clean gas inlets 5 are evenly distributed in the circumferential direction.

[0029] The distance between adjacent clean gas inlets 5 is 5-20 mm.

[0030] The central axes of the nozzles of all the clean gas inlets 5 are inclined and the nozzles are directed towards the circumferential side of the wafer 6.

[0031] Each clean gas inlet 5 is independently provided with a flow regulating mechanism.

[0032] The installation height of each clean gas inlet 5 is adjustable, and the distance between the clean gas inlet 5 and the wafer 6 is adjustable in the range of 5-30 mm.

[0033] The clean gas includes, but is not limited to, hydrogen, nitrogen, argon and helium.

[0034] The following describes the use of the present application in conjunction with the drawings:

[0035] During the photolithography process of the wafer 6, the projection optical box 1 is used as a key component in the photolithography system to carry high-precision optical projection instruments, the wafer chamber 3 provides a processing environment for the wafer 6, and the connecting pipe 2 is the transition area between the projection optical box 1 and the wafer chamber 3, and is the main path for the upward diffusion of contaminants.

[0036] In order to avoid the upward diffusion of contaminants to the projection optical box 1, clean gas can be introduced into the two symmetrically arranged half-Laval nozzles 4 to accelerate the injection of clean gas into the connecting pipe 2, thereby building a stable dynamic gas isolation barrier in the middle of the connecting pipe 2.

[0037] At the same time, clean gas is also introduced into the clean gas inlets 5 and injected into the wafer chamber 3 from the clean gas inlets 5, and a uniform and stable gas isolation layer is formed above the wafer 6. Through the multi-stage gas curtain isolation of the dynamic gas isolation barrier in the middle of the connecting pipe 2 and the gas isolation layer above the wafer 6, the upward diffusion of contaminants from the wafer chamber 3 through the connecting pipe 2 into the projection optical box 1 can be effectively inhibited, meeting the high-cleanliness environment requirement of the photolithography system.

[0038] In addition, in order to better meet the clean control requirements of different systems, the gas distribution, flow and pressure of the clean gas inlets 5 can be flexibly adjusted by independently configuring a flow regulating mechanism, and different lengths, sizes and diameters of the half-Laval nozzles 4 can be replaced to further flexibly adjust the injection parameters of the clean gas according to the actual working conditions, improve the system adaptability and the utilization efficiency of the clean gas, so as to meet the technical requirements of pollution control in high-cleanliness scenarios such as semiconductor photolithography.

[0039] The schemes in the embodiments are not intended to limit the protection scope of the present application, and any equivalent implementation or change made without departing from the present application is included in the protection scope of the present application.

Claims

1. A dynamic gas isolation device with a multi-channel air intake structure, characterized in that: The system includes a projection optics box, connecting pipes, a wafer chamber, a semi-Laval nozzle, and a cleaning gas inlet. The projection optics box is located directly above the wafer chamber, and its internal cavity is sealed to the wafer chamber via the connecting pipes. The semi-Laval nozzle is horizontally positioned, with one end sealed to the connecting pipes and the other end used to introduce cleaning gas. Several cleaning gas inlets are located at the top of the wafer chamber, above the wafer inside. The Laval face of the semi-Laval nozzle faces downwards. Both the semi-Laval nozzle and the cleaning gas inlets adopt a modular, detachable, and replaceable structure. The cleaning gas inlets are evenly distributed circumferentially. The nozzle axes of all cleaning gas inlets are inclined, and the nozzles face the circumferential side of the wafer. Each cleaning gas inlet is independently equipped with a flow regulation mechanism.

2. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The number of semi-Laval nozzles is two, and the phase angle between the two semi-Laval nozzles on the connecting pipe is 180°.

3. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The distance between adjacent clean gas inlets is 5mm to 20mm.

4. The dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The installation height of each of the cleaning gas inlets is adjustable, and the distance between the cleaning gas inlet and the wafer can be adjusted from 5mm to 30mm.

5. A dynamic gas isolation device with a multi-channel air intake structure according to claim 1, characterized in that: The cleaning gases include, but are not limited to, hydrogen, nitrogen, argon, and helium.

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