Display panel and display device

Abstract

The invention provides a display panel and a display device.The display panel comprises a first transistor and a pixel electrode which are located in a display region, the first transistor comprises a first source electrode and a first drain electrode, the first source electrode comprises a metal conductive part and a transparent conductive part which are stacked, and the transparent conductive part and the first drain electrode are arranged on the same layer; according to the display panel, the aperture ratio of the display panel can be increased, so that the light transmittance of the display panel can be improved, the process steps are reduced, and the production cost of the display panel is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a display device. BACKGROUND

[0002] With the development of display technology, liquid crystal display technology is widely applied to mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers and other consumer electronic products due to its high image quality, power saving, thin body and wide application range, and gradually becomes the mainstream in the display technology.

[0003] At present, thin film transistors of different semiconductor materials are arranged on the same substrate, so that the display panel prepared can have the respective advantages of the two thin film transistors. For example, the two semiconductor materials are polycrystalline silicon material and metal oxide material, so that the display panel prepared can have high brightness, high resolution and low driving power consumption. However, due to the complex process, the manufacturing cost is high, and due to the realization of high pixel density, the area of the light transmission region is compressed, resulting in a decrease in the light transmittance of the display panel.

[0004] Therefore, it is necessary to provide a display panel and a display device to improve this defect. SUMMARY

[0005] Embodiments of the present application provide a display panel and a display device, which can improve the light transmittance of the display panel.

[0006] In order to achieve the above-mentioned purpose, according to the first aspect of the present application, a display panel having a display area is provided, comprising:

[0007] a first transistor disposed on the substrate and located in the display area, the first transistor comprising a first active part, a first source and a first drain located on a side of the first active part away from the substrate, the first active part comprising a source contact part and a drain contact part arranged at intervals, the first source being connected with the source contact part, and the first drain being connected with the drain contact part; and

[0008] a pixel electrode disposed on the first transistor and electrically connected to the first drain;

[0009] wherein the first source comprises a metal conductive part and a transparent conductive part stacked, and the transparent conductive part is disposed in the same layer as the first drain.

[0010] Optionally, the orthographic projection of the metal conductive part on the substrate and the orthographic projection of the transparent conductive part on the substrate at least partially overlap.

[0011] Optionally, the metal conductive part is stacked on the transparent conductive part.

[0012] Optionally, a ratio of thicknesses of the transparent conductive part and the metal conductive part is greater than or equal to 0.04 and less than or equal to 1.

[0013] Optionally, a thickness of the first drain is equal to a thickness of the transparent conductive part.

[0014] Optionally, the display panel further comprises:

[0015] a first active layer comprising the first active part of the first transistor;

[0016] an interlayer dielectric layer disposed on the first active layer, the first source and the first drain being disposed on the interlayer dielectric layer;

[0017] wherein the interlayer dielectric layer is provided with a first hole and a second hole, the transparent conductive part is connected with the source contact part through the first hole, and the first drain is connected with the drain contact part through the second hole.

[0018] Optionally, the transparent conductive part is continuously disposed to cover a sidewall of the first hole and extends from the sidewall of the first hole to the interlayer dielectric layer.

[0019] Optionally, a distance between an edge of the transparent conductive part and the sidewall of the first hole in a radial direction of the first hole is greater than or equal to 0.5 microns and less than or equal to 2 microns.

[0020] Optionally, the metal conductive part is a single-layer metal structure or a laminated metal structure.

[0021] Optionally, a thickness of the first drain is equal to a thickness of the transparent conductive part, and a ratio of thicknesses of the first drain and the metal conductive part is greater than or equal to 0.04 and less than or equal to 1.

[0022] Optionally, the display panel further comprises:

[0023] a first electrode layer disposed on the first source and the first drain;

[0024] a second electrode layer disposed on the first electrode layer;

[0025] wherein the first electrode layer comprises the pixel electrode, and the second electrode layer comprises a common electrode.

[0026] Optionally, the display panel further has a non-display area surrounding the display area, and the display panel further comprises a second transistor disposed in the non-display area, the second transistor comprising a second source and a second drain, the light transmittance of the second source and the second drain being less than the light transmittance of the first drain.

[0027] Optionally, the first source comprises a transparent conductive part and a metal conductive part stacked together, the second source and the second drain are disposed in the same layer as the first source and are made of the same material as the metal conductive part.

[0028] Optionally, the display panel further comprises:

[0029] a second active layer comprising a second active part of the second transistor;

[0030] a first active layer disposed on the first active layer, the first active layer comprising the first active part of the first transistor;

[0031] wherein the material of the second active layer comprises a silicon semiconductor material, and the material of the first active layer comprises an oxide semiconductor material.

[0032] According to a second aspect of the present application, a display device is provided, comprising the display panel as described above.

[0033] In the display panel of the embodiments of the present application, the display panel comprises the first transistor and the pixel electrode, both of which are located in the display area, the first transistor comprises the first source and the first drain, the first source comprises the metal conductive part and the transparent conductive part stacked together, and by disposing the transparent conductive part in the same layer as the first drain, the aperture ratio of the display panel can be increased, so that the light transmittance of the display panel can be improved, the process steps can be reduced, and the production cost of the display panel can be reduced.

[0034] Other features and advantages of the present application will be described in detail in the following specific embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0036] In order to more completely understand the present application and its beneficial effects, the following will be described in conjunction with the drawings, wherein the same reference numerals in the following description represent the same parts.

[0037] Figure 1A top view of a display panel provided by an embodiment of the present application;

[0038] Figure 2 A schematic diagram of a film layer structure of a display panel provided by an embodiment of the present application;

[0039] Figures 3a to 3e A schematic diagram of a manufacturing method of a display panel provided by an embodiment of the present application;

[0040] Figure 4 A schematic diagram of a display device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the protection scope of the present application.

[0042] An embodiment of the present application provides a display panel, the display panel has a display area and comprises a first transistor and a pixel electrode, both of which are located in the display area, the first transistor comprises a first active part and a first source electrode and a first drain electrode located on a side of the first active part away from a substrate, the first active part comprises a source electrode contact part and a drain electrode contact part arranged at intervals, the first source electrode is electrically connected to the source electrode contact part, the first drain electrode is electrically connected to the drain electrode contact part, the pixel electrode is arranged on the first transistor and is electrically connected to the first drain electrode, the first source electrode comprises a transparent conductive part and a metal conductive part arranged in a stack, and the transparent conductive part is arranged in the same layer as the first drain electrode.

[0043] In the embodiment of the present application, the first source electrode and the first drain electrode are arranged in the same layer, and the material of the first drain electrode is set as a transparent conductive material, so that the aperture ratio of the display panel can be increased, so that the light transmittance of the display panel can be improved, the process steps can be reduced, and the production cost of the display panel can be reduced.

[0044] Please refer to Figure 1 and Figure 2 , Figure 1 A top view of a display panel provided by an embodiment of the present application, Figure 2This is a schematic diagram of the film layer structure of a display panel provided in an embodiment of this application. The display panel 100 has a display area AA and a non-display area NA surrounding the display area AA. The display area AA is the area used to display an image. The display panel may include a pixel driving circuit disposed in the display area AA. The pixel driving circuit includes a first transistor T1, which is a metal-oxide-slim thin-film transistor. The non-display area NA is the area used to place peripheral circuits. The non-display area NA does not display an image. The peripheral circuits may include, but are not limited to, a gate driving circuit. The gate driving circuit includes a second transistor T2, which is a low-temperature polycrystalline silicon thin-film transistor.

[0045] Combination Figure 1 and Figure 2 As shown, the display panel 100 includes a first transistor T1, a pixel electrode 231, and data signal lines, all located in the display area AA. The first transistor T1 includes a first active portion 171 and a first source 211 and a first drain 212 located on the first active portion 171. The first active portion 171 includes a source contact 1711 and a drain contact 1712 spaced apart, and a first channel 1713 located between the source contact 1711 and the drain contact 1712. The first source 211 is electrically connected to the source contact 1711, and the first drain 212 is electrically connected to the drain contact 1712. The data signal lines are electrically connected to the pixel electrode 231 via the first source 211, the first active portion 171, and the first drain 212. The first transistor T1 can be used to control the conduction and disconnection of the line between the data signal lines and the pixel electrode 231.

[0046] like Figure 2 The first source electrode 211 includes a stacked metal conductive portion 2112 and a transparent conductive portion 2111, with the transparent conductive portion 2111 and the first drain electrode 212 disposed in the same layer. It should be noted that "the transparent conductive portion 2111 and the first drain electrode 212 are disposed in the same layer" means that the transparent conductive portion 2111 and the first drain electrode 212 are disposed on the surface of the same film layer, and the transparent conductive portion 2111 and the first source electrode 211 are made of the same material. The transparent conductive portion 2111 and the first source electrode 211 can be formed simultaneously using the same process.

[0047] In the embodiments of this application, by setting the transparent conductive part 2111 and the first drain 212 in the same layer, not only can the process steps be reduced, but the aperture ratio of the display panel can also be increased, thereby increasing the light transmittance of the display panel while reducing the production cost of the display panel.

[0048] In some embodiments, the material of the first drain 212 includes a transparent conductive material. Specifically, the transparent conductive material can be any one of transparent metal oxide conductive materials such as indium tin oxide, indium-doped zinc oxide, aluminum-doped zinc oxide, and gallium-doped zinc oxide.

[0049] In some embodiments, the material of the first drain 212 is the same as the material of the pixel electrode 231, and the light transmittance of the first drain 212 is the same as the light transmittance of the pixel electrode 231, so as to improve the aperture ratio of the display panel, thereby improving the light transmittance of the display panel.

[0050] In some embodiments, as shown in FIG. 2A, the first drain 212 is a single-layer transparent conductive structure. For example, the first drain 212 is a single-layer transparent conductive structure formed by indium tin oxide. In other embodiments, the first drain 212 can also be a double-layer or multi-layer transparent conductive structure, as long as the light transmittance of the first drain 212 is greater than the light transmittance of the first source 211. Figure 2

[0051] In some embodiments, the thickness of the first drain 212 is greater than or equal to 300 angstroms and less than or equal to 1500 angstroms. For example, the thickness of the first drain 212 can be 300 angstroms, 500 angstroms, 700 angstroms, 900 angstroms, 1000 angstroms, 1300 angstroms, or 1500 angstroms, etc. It should be noted that if the thickness of the first drain 212 is too small, the contact impedance between the first drain 212 and the first active part 171 or the pixel electrode 231 will be too large, which will cause the storage capacitor of the pixel driving circuit to be unable to charge to the target voltage, resulting in a decrease in color saturation and contrast of the display image. If the thickness of the first drain 212 is too large, the display panel will have color deviation. By limiting the thickness of the first drain 212 to be between 300 angstroms and 1500 angstroms, the storage capacitor can be charged to the target voltage, thereby ensuring that the display image has good color saturation and contrast, and avoiding the situation that the display image has color deviation, the aperture ratio of the display panel is improved, and the light transmittance of the display panel is improved.

[0052] In some embodiments, as shown in FIG. 2A, the first source 211 includes a transparent conductive part 2111 and a metal conductive part 2112 stacked together, the light transmittance of the transparent conductive part 2111 is greater than the light transmittance of the metal conductive part 2112, and the electrical conductivity of the transparent conductive part 2111 is less than the electrical conductivity of the metal conductive part 2112. By replacing the film layer structure with low light transmittance of the first source 211 with the transparent conductive part 2111 with high light transmittance, the light transmittance of the first source 211 can be improved to a certain extent, thereby improving the aperture ratio of the display panel, and improving the light transmittance of the display panel. Figure 2

[0053] In some embodiments, the metal conductive part 2112 is stacked on the transparent conductive part 2111.

[0054] As shown in FIG. 2A, the first source 211 includes a transparent conductive part 2111 and a metal conductive part 2112 stacked together, the light transmittance of the transparent conductive part 2111 is greater than the light transmittance of the metal conductive part 2112, and the electrical conductivity of the transparent conductive part 2111 is less than the electrical conductivity of the metal conductive part 2112. By replacing the film layer structure with low light transmittance of the first source 211 with the transparent conductive part 2111 with high light transmittance, the light transmittance of the first source 211 can be improved to a certain extent, thereby improving the aperture ratio of the display panel, and improving the light transmittance of the display panel. Figure 2 ​​As shown, the metal conductive part 2112 is disposed on the surface of the transparent conductive part 2111 and is in direct contact with the upper surface of the transparent conductive part 2111. The first source electrode 211 is a stacked structure formed by stacking the transparent conductive part 2111 and the metal conductive part 2112.

[0055] In some embodiments, such as Figure 2 As shown, the orthographic projection of the metal conductive part 2112 onto the transparent conductive part 2111 covers the transparent conductive part 2111.

[0056] In some embodiments, such as Figure 2 As shown, the metal conductive part 2112 is part of the data signal line 215. The part of the data signal line 215 superimposed on the transparent conductive part 2111 can be regarded as the metal conductive part 2112. The film structure of the data signal line 215 is the same as the film structure of the metal conductive part 2112. The area of ​​the metal conductive part 2112 is greater than or equal to the area of ​​the transparent conductive part 2111.

[0057] In some embodiments, the transparent conductive portion 2111 and the first drain 212 are disposed in the same layer and made of the same material; both the transparent conductive portion 2111 and the first drain 212 are made of transparent conductive material. In actual manufacturing, the transparent conductive portion 2111 and the first drain 212 can be fabricated simultaneously using the same film-forming process, which simplifies the film layer structure of the display panel and reduces the production cost of the display panel.

[0058] In some embodiments, such as Figure 2 As shown, the display panel 100 further includes a first active layer 17 and an interlayer dielectric layer 20. The first active layer 17 includes a first active portion 171 of a first transistor T1. The interlayer dielectric layer 20 is disposed on the first active layer 17, and a first source 211 and a first drain 212 are disposed on the interlayer dielectric layer 20. The interlayer dielectric layer 20 has a first hole H1 and a second hole H2. A transparent conductive portion 2111 is connected to the first drain 212 in sequence through the first hole H1, the first active portion 171, and the second hole H2.

[0059] It should be noted that the transparent conductive part 2111 can not only connect the first source electrode 211 and the first active part 171, but also protect the first active part 171, preventing other process steps after the formation of the first hole H1 from damaging the part of the first active part 171 exposed by the first hole H1.

[0060] In some embodiments, such as Figure 2The transparent conductive part 2111 is continuously arranged to cover the sidewall of the first hole H1 and extends from the sidewall of the first hole H1 to the interlayer dielectric layer 20. The transparent conductive part 2111 also covers the exposed part of the first active part 171 of the first hole H1. The transparent conductive part 2111 can be damaged in other process procedures after the formation of the first hole H1 and the exposed part of the first active part 171 of the first hole H1.

[0061] In some embodiments, as shown in FIG. 11, the distance between the edge of the transparent conductive part 2111 and the sidewall of the first hole H1 in the radial direction of the first hole H1 is a first distance d1, and the first distance d1 is greater than or equal to 0.5 microns and less than or equal to 2 microns. For example, the first distance d1 can be 0.5 microns, 0.7 microns, 1 micron, 1.2 microns, 1.5 microns, 1.8 microns, or 2 microns, etc. Figure 2

[0062] It should be noted that the transparent conductive part 2111 only covers the sidewall of the first hole H1 and the interlayer dielectric layer 20 at the edge of the first hole H1. If the distribution range of the transparent conductive part 2111 is too small, if the patterning process of the transparent conductive part 2111 deviates, the sidewall of the first hole H1 cannot be completely covered, which causes damage to the first hole H1 and the exposed part of the first active part 171 of the first hole H1 in other process procedures after the formation of the first hole H1. If the distribution range of the transparent conductive part 2111 is too large, it will cause color deviation of the display panel. In this embodiment, the distance between the edge of the transparent conductive part 2111 and the sidewall of the first hole H1 in the radial direction of the first hole H1 is limited to 0.5 microns to 2 microns, which not only avoids the color deviation caused by the too large distribution range of the transparent conductive part 2111, but also ensures the protection of the first hole H1 and the exposed part of the first active part 171 of the first hole H1 by the transparent conductive part 2111.

[0063] In some embodiments, the material of the metal conductive part 2112 includes metal, which can be any one of molybdenum, copper, silver, titanium, aluminum, nickel, etc. Selecting metal as the material of the metal conductive part 2112 can reduce the resistance of the first source electrode 211, which is conducive to improving the charging rate of the storage capacitor of the pixel driving circuit, thereby improving the display effect of the display panel.

[0064] In some embodiments, as shown in FIG. 11, the metal conductive part 2112 is a single-layer metal structure or a stacked metal structure. For example, the metal conductive part 2112 can be a single-layer metal structure of molybdenum or copper, or a three-layer stacked structure of molybdenum / titanium / molybdenum, or a three-layer stacked structure of titanium / aluminum / titanium. Figure 2

[0065] ​​In some embodiments, the thickness of the first drain 212 is equal to the thickness of the transparent conductive portion 2111, and the ratio of the thickness of the first drain 212 to the thickness of the metal conductive portion 2112 is greater than or equal to 0.04 and less than or equal to 1. For example, the ratio of the thickness of the first drain 212 to the thickness of the metal conductive portion 2112 can be 0.04, 0.08, 0.1, 0.3, 0.5, 0.7, 0.9, or 1, etc. It should be noted that if the ratio of the thickness of the first drain 212 to the thickness of the transparent conductive portion 2111 is too small, it means that the thickness of the metal conductive portion 2112 is too large. This not only leads to material waste but also affects the flatness of the display panel. If the ratio of the thickness of the first drain 212 to the thickness of the transparent conductive portion 2111 is too large, it means that the thickness of the metal conductive portion 2112 is too small. This will increase the contact resistance of the metal conductive portion 2112, preventing the storage capacitor of the pixel driving circuit from charging to the target voltage, resulting in a decrease in color saturation and contrast of the displayed image. In this embodiment, by limiting the ratio of the thickness of the first drain 212 to the thickness of the metal conductive portion 2112 to between 0.04 and 1, the aperture ratio of the display panel can be increased while ensuring that the storage capacitor can charge to the target voltage, thereby ensuring good color saturation and contrast of the displayed image. This increases the light transmittance of the display panel.

[0066] In some embodiments, such as Figure 2 As shown, the thickness of the metallic conductive portion 2112 is greater than or equal to 1500 angstroms and less than or equal to 7500 angstroms. For example, the thickness of the metallic conductive portion 2112 can be 1500 angstroms, 1800 angstroms, 2000 angstroms, 2500 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms, or 7500 angstroms, etc.

[0067] In some embodiments, such as Figure 2 As shown, the display panel 100 also includes a first electrode layer 23 and a second electrode layer 25. The first electrode layer 23 is disposed on the first source electrode 211 and the first drain electrode 212, and the second electrode layer 25 is disposed on the first electrode layer 23. The first electrode layer 23 includes a pixel electrode 231, and the second electrode layer 25 includes a common electrode 251.

[0068] In some embodiments, such as Figure 2 As shown, the display panel 100 includes a substrate 11 and a buffer layer 12, a second active layer 13, a first gate insulating layer 14, a first gate layer 15, a second gate insulating layer 16, a first active layer 17, a third gate insulating layer 18, a second gate layer 19, an interlayer dielectric layer 20, a source / drain layer 21, a planarization layer 22, a first electrode layer 23, a passivation layer 24, and a second electrode layer 25, which are sequentially stacked on the substrate 11.

[0069] In some embodiments, such asFigure 2 As shown, the flat layer 22 is provided with a third hole H3 penetrating through the flat layer 22 and exposing the part of the first drain electrode 212 below the flat layer 22, and the pixel electrode 231 is disposed on the flat layer 22 and overlaps the first drain electrode 212 through the third hole H3. It should be noted that if the pixel electrode 231 is disposed on the common electrode 251, the via hole through which the pixel electrode 231 overlaps the first drain electrode 212 needs to pass through the film layer where the common electrode 251 is located, which will compress the area of the common electrode 251 and reduce the aperture ratio of the display panel. In the embodiment, the pixel electrode 231 is disposed on the flat layer 22, and the common electrode 251 is disposed on the pixel electrode 231, so that the via hole through which the pixel electrode 231 overlaps the first drain electrode 212 only needs to pass through the flat layer 22 and will not affect the arrangement of the common electrode 251, thereby improving the aperture ratio of the display panel.

[0070] In some embodiments, as shown in Figure 1 The first gate layer 15 includes the bottom gate 151 of the first transistor T1 and the first gate 152 of the second transistor T2, and the second gate layer 19 includes the top gate 191 of the first transistor T1.

[0071] In some embodiments, as shown in Figure 2 and Figure 2 The display panel 100 further includes the second transistor T2 disposed in the non-display area NA, and the second transistor T2 includes a second source electrode 213 and a second drain electrode 214, and the light transmittance of the second source electrode 213 and the second drain electrode 214 is less than that of the first drain electrode 212.

[0072] In some embodiments, the second source electrode 213 and the second drain electrode 214 are disposed in the same layer as the first source electrode 211 and are made of the same metal conductive part 2112 material as the first source electrode 211.

[0073] As shown in Figure 2 The first source electrode 211, the second source electrode 213, and the second drain electrode 214 are all disposed on the surface of the interlayer dielectric layer 20 away from the substrate 11, and the first source electrode 211 is made of the same material as the second source electrode 213 and the second drain electrode 214. In the actual preparation process, the first source electrode 211, the second source electrode 213, and the second drain electrode 214 can be simultaneously prepared by using the same film forming process, thereby simplifying the film layer structure of the display panel and reducing the production cost of the display panel.

[0074] In some embodiments, as shown in Figure 2As shown, the second active layer 13 includes a second active part 131 of the second transistor T2, and the material of the second active layer 13 includes a silicon semiconductor material, which can be amorphous silicon or polycrystalline silicon, i.e., the second transistor T2 is an amorphous silicon thin film transistor or a polycrystalline silicon thin film transistor. In the display area AA, the amorphous silicon thin film transistor or the polycrystalline silicon thin film transistor is used as the driving transistor of the pixel driving circuit, and the oxide semiconductor material has a higher mobility, which can ensure the driving capability of the driving transistor.

[0075] In some embodiments, as shown in Figure 2 As shown, the first active layer 17 includes a first active part 171 of the first transistor T1, and the material of the first active layer 17 includes an oxide semiconductor material, which can be any one of indium gallium zinc oxide, indium zinc oxide, indium tin zinc oxide, and zinc tin oxide, i.e., the first transistor T1 is a metal oxide semiconductor thin film transistor. In the non-display area NA, the metal oxide semiconductor thin film transistor is used, which can reduce the leakage current of the display panel and reduce the power consumption of the display panel.

[0076] In some embodiments, as shown in Figures 3a to 3e As shown, the first gate insulating layer 14, the second gate insulating layer 16, the third gate insulating layer 18, the interlayer dielectric layer 20, and the passivation layer 24 are all inorganic insulating layers, which can be a single-layer structure formed by any one of silicon nitride, silicon oxide, or silicon oxynitride, or a laminated structure formed by at least two of silicon nitride, silicon oxide, or silicon oxynitride.

[0077] According to the display panel provided by the above-mentioned embodiments of the present application, the embodiments of the present application further provide a display panel manufacturing method for manufacturing the display panel provided by any one of the above-mentioned embodiments, which is combined with Figures 3a to 3e As shown, Figure 3a a schematic diagram of the display panel manufacturing method provided by the embodiments of the present application, the display panel manufacturing method includes the following steps:

[0078] Step S1, as shown in Figure 3b The buffer layer 12, the second active layer 13, the first gate insulating layer 14, the first gate layer 15, the second gate insulating layer 16, the first active layer 17, the third gate insulating layer 18, the second gate layer 19, and the interlayer dielectric layer 20 are sequentially formed on the substrate 11.

[0079] Step S2, as shown in Figure 3c The first hole H1 and the second hole H2 are formed on the interlayer dielectric layer 20 to expose the first end and the second end of the first active part 171 in the first active layer 17.

[0080] Step S3, as shown in the figure, a layer of transparent conductive material is deposited on the interlayer dielectric layer 20, and the transparent conductive material is patterned to form a transparent conductive part 2111 and a first drain electrode 212. Figure 3c

[0081] As shown in the figure, the transparent conductive part 2111 is overlapped with the first end of the first active part 171 through the first hole H1, and the first drain electrode 212 is overlapped with the second end of the first active part 171 through the second hole H2. Figure 3d

[0082] Step S4, as shown in the figure, a fourth hole H4 and a fifth hole H5 are formed on the interlayer dielectric layer 20. Figure 3d

[0083] As shown in the figure, the fourth hole H4 and the fifth hole H5 both penetrate the interlayer dielectric layer 20, the third gate insulating layer 18, the second gate insulating layer 16 and the first gate insulating layer 14, and respectively expose the first end and the second end of the second active part 131. Figure 3c In the embodiments of the present application, as shown in the figures of

[0084] and Figure 3d , the transparent conductive part 2111 formed by step S3 covers the sidewall of the first hole H1 and the first active part 171 exposed by the first hole H1, so as to prevent the first active part 171 exposed by the first hole H1 from being damaged when the fourth hole H4 and the fifth hole H5 are formed in step S4, thereby improving the process yield of the display panel. Figure 3e Step S5, as shown in the figure, a metal conductive material is deposited on the interlayer dielectric layer 20, the transparent conductive part 2111 and the first drain electrode 212, and the metal conductive material is patterned to remove the metal material on the first drain electrode 212, thereby forming a metal conductive part 2112, a second source electrode 213 and a second drain electrode 214.

[0085] Figure 3e As shown in the figure, the metal conductive part 2112 is located on the transparent conductive part 2111, the second source electrode 213 is overlapped with the first end of the second active part 131 through the fourth hole H4, and the second drain electrode 214 is overlapped with the second end of the second active part 131 through the fifth hole H5.

[0086] Figure 4 In the embodiments of the present application, the processes of the subsequent planarization layer 22, the first electrode layer 23, the passivation layer 24 and the second electrode layer 25 can refer to the processes of the related film layers in the existing display panel, which will not be described here.

[0087] In the embodiments of the present application, the processes of the subsequent planarization layer 22, the first electrode layer 23, the passivation layer 24 and the second electrode layer 25 can refer to the processes of the related film layers in the existing display panel, which will not be described here.

[0088] ​​​​​According to the display panel provided in the above embodiments of the present application, the embodiments of the present application further provide a display device. Please refer to Figure 4 , ​ FIG. 1 is a schematic diagram of a display device provided in the embodiments of the present application. The display device 1000 includes a display panel 100 and a housing 200. The display panel 100 is arranged on the housing 200. The display panel 100 can be any one of the display panels provided in the above embodiments. The display device provided in the embodiments of the present application can achieve the same technical effects as the display panel provided in any one of the above embodiments, and thus the description is not repeated here.

[0089] In the embodiments of the present application, the display device can be a mobile terminal, such as a smart phone, a smart watch, a tablet computer, a notebook computer, a virtual reality device, etc. The display device can also be a fixed terminal, such as a television, a desktop computer, etc. The display device can also be a vehicle-mounted display device.

[0090] The display panel and the display device provided in the embodiments of the present application have the following beneficial effects. The display panel includes the first transistor and the pixel electrode arranged in the display area. The first source and the first drain are arranged in the same layer. In this way, the aperture ratio of the display panel can be increased. Therefore, the light transmittance of the display panel can be improved, and the process steps can be reduced, and the production cost of the display panel can be reduced.

[0091] In the description of the present application, the terms “first” and “second” are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as “first” and “second” can explicitly or implicitly include one or more features. In the description of the present application, the meaning of “a plurality of” is two or more, unless otherwise specifically limited.

[0092] In the above embodiments, the description of each embodiment has its own focus. The parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.

[0093] The embodiments, the implementation manners and the related technical features of the present application can be combined or replaced with each other without conflict.

[0094] The above is only the preferred embodiments of the present application, and does not limit the present application in any form. Any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application, without departing from the technical solution of the present application, still falls within the scope of the technical solution of the present application.

Claims

1. A display panel, characterized in that, The display panel has a display area and includes: Substrate; A first transistor is disposed on the substrate and located in the display area. The first transistor includes a first active portion and a first source and a first drain located on the side of the first active portion away from the substrate. The first active portion includes a source contact portion and a drain contact portion spaced apart. The first source is connected to the source contact portion, and the first drain is connected to the drain contact portion. A pixel electrode is disposed on the first transistor and electrically connected to the first drain. The first source electrode includes a stacked metal conductive portion and a transparent conductive portion, wherein the transparent conductive portion is disposed in the same layer as the first drain electrode.

2. The display panel as described in claim 1, characterized in that, The orthographic projection of the metallic conductive portion onto the substrate at least partially overlaps with the orthographic projection of the transparent conductive portion onto the substrate.

3. The display panel as described in claim 1, characterized in that, The metallic conductive portion is stacked on the transparent conductive portion.

4. The display panel as described in claim 1, characterized in that, The ratio of the thickness of the transparent conductive part to the thickness of the metal conductive part is greater than or equal to 0.04 and less than or equal to 1.

5. The display panel as described in claim 1, characterized in that, The thickness of the first drain electrode is equal to the thickness of the transparent conductive portion.

6. The display panel as described in claim 1, characterized in that, The display panel also includes: The first active layer includes the first active portion of the first transistor; An interlayer dielectric layer is disposed on the first active layer, and the first source and the first drain are disposed on the interlayer dielectric layer; The interlayer dielectric layer is provided with a first hole and a second hole. The transparent conductive part is connected to the source contact part through the first hole, and the first drain is connected to the drain contact part through the second hole.

7. The display panel as described in claim 6, characterized in that, The transparent conductive portion is continuously disposed to cover the sidewall of the first hole and extends from the sidewall of the first hole to the interlayer dielectric layer.

8. The display panel as described in claim 7, characterized in that, The distance between the edge of the transparent conductive part and the sidewall of the first hole in the radial direction of the first hole is greater than or equal to 0.5 micrometers and less than or equal to 2 micrometers.

9. The display panel as claimed in claim 1, characterized in that, The conductive metal part is a single-layer metal structure or a multilayer metal structure.

10. The display panel as claimed in claim 1, characterized in that, The ratio of the thickness of the first drain to the thickness of the metal conductive part is greater than or equal to 0.04 and less than or equal to 1.

11. The display panel as claimed in claim 1, characterized in that, The display panel also includes: A first electrode layer is disposed on the first source and the first drain; The second electrode layer is disposed on the first electrode layer; The first electrode layer includes the pixel electrode, and the second electrode layer includes a common electrode.

12. The display panel as claimed in claim 1, characterized in that, The display panel also has a non-display area surrounding the display area, and the display panel further includes a second transistor disposed in the non-display area. The second transistor includes a second source and a second drain, and the second source and the second drain are disposed in the same layer as the metal conductive part.

13. The display panel as claimed in claim 12, characterized in that, The display panel also includes: The second active layer includes the second active portion of the second transistor; A first active layer is disposed on the second active layer, and the first active layer includes the first active portion of the first transistor; The material of the second active layer includes silicon semiconductor material, and the material of the first active layer includes oxide semiconductor material.

14. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 13.

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