Chip structure and display substrate

Abstract

The invention discloses a chip structure and a display substrate, and belongs to the technical field of display. The chip structure comprises a first substrate, a light emitting unit, a color conversion unit and a dimming unit. A refractive index of a dimming portion in the dimming unit may be greater than a refractive index of the functional layer. Therefore, after the light emitted by the sub-light-emitting functional layer in the light-emitting unit passes through the corresponding optical functional part, in the process that the light emitted from the optical functional layer is emitted to the corresponding dimming part, the light with a small visual angle can directly penetrate through the corresponding dimming part and then is emitted; the light with the large viewing angle can be adjusted through the cooperation of the dimming part with the large refractive index and the functional layer with the small refractive index, so that the included angle between the adjusted light with the large viewing angle and the normal of the first substrate is small. Thus, the light emitting efficiency of the chip structure in the direction of a small visual angle can be improved so as to ensure that the brightness of the chip structure is high when the chip structure is in front view, and the display effect of the display substrate which is subsequently integrated with the chip structure is good.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a chip structure and a display substrate. Background Technology

[0002] With the development of display technology, LED chips have become the most advantageous next-generation display media due to their advantages such as pure color, wide dynamic range, high brightness, high definition, low operating voltage, low power consumption, long life, impact resistance, wide viewing angle, and stable and reliable operation. They have already been widely used. Summary of the Invention

[0003] This application provides a chip structure and a display substrate. The technical solution is as follows:

[0004] On one hand, a chip structure is provided, including: a first substrate, a light-emitting unit, a color conversion unit, and a dimming unit; the dimming unit is located between the first substrate and the color conversion unit, the light-emitting unit is located on the side of the color conversion unit away from the first substrate, and the light-emitting side of the light-emitting unit faces the first substrate;

[0005] The color conversion unit includes a limiting dam and an optical functional unit. The limiting dam has an opening area, and the optical functional unit is located within the opening area. The optical functional unit is used to convert the color of light entering the optical functional unit.

[0006] The dimming unit includes a functional layer and a dimming section. The functional layer has a dimming slot, at least a portion of the dimming section is located within the dimming slot, and the refractive index of the dimming section is greater than the refractive index of the functional layer.

[0007] The orthographic projection of the dimming groove on the first substrate overlaps with the orthographic projection of the opening area on the first substrate.

[0008] Optionally, the functional layer has: a first surface facing the first substrate and a second surface disposed opposite to the first surface, wherein the dimming slot is a through slot extending from the first surface to the second surface, and the angle between the sidewall of the through slot and the second surface is an acute angle.

[0009] Optionally, the dimming unit further includes: a flat cover layer located on the side of the functional layer opposite to the first substrate, the flat cover layer covering the functional layer and the dimming unit, and the refractive index of the flat cover layer being greater than the refractive index of the functional layer.

[0010] Optionally, the flat cover layer and the dimming unit are integrally formed; a portion of the flat cover layer is in contact with the side of the functional layer opposite to the first substrate, and another portion of the flat cover layer is connected to the side of the dimming unit opposite to the first substrate.

[0011] Optionally, the distance between the first surface and the second surface is in the range of 4 micrometers to 6 micrometers; the angle between the sidewall of the through groove and the second surface is in the range of 30° to 90°.

[0012] Optionally, the dimming slot is a blind slot that does not penetrate the functional layer, and the blind slot is distributed on the side of the functional layer facing the first substrate, with all dimming parts distributed within the blind slot.

[0013] Optionally, the dimming unit has: a third surface facing the first substrate, a fourth plane disposed opposite to the first plane, and a first outer contour surface located between the third surface and the fourth panel, wherein the angle between the first outer contour surface and the third surface is an acute angle, and the angle between the first contour surface and the fourth surface is an obtuse angle.

[0014] Optionally, the distance between the third surface and the fourth surface is in the range of 4 micrometers to 6 micrometers; the angle between the first profile surface and the fourth surface is in the range of 90° to 150°.

[0015] Optionally, the difference between the refractive index of the dimming section and the refractive index of the functional layer is greater than or equal to 0.3.

[0016] Optionally, the dimming unit has: a third surface facing the first substrate, and an arc surface disposed opposite to the third surface, the arc surface being an arc surface protruding toward the color conversion unit.

[0017] Optionally, the dimming unit further includes a hydrophobic layer located between the first substrate and the dimming part, wherein the refractive index of the hydrophobic layer is lower than the refractive index of the dimming part.

[0018] Optionally, the dimming unit includes: a plurality of dimming sections; the color conversion unit includes: a plurality of optical functional sections, each of the plurality of optical functional sections corresponding to one of the plurality of dimming sections; the orthographic projection of one dimming section on the first substrate covers the orthographic projection of the corresponding optical functional section on the first substrate;

[0019] In this unit, any two different dimming sections have different refractive indices.

[0020] Optionally, the plurality of optical functional units include: a first optical functional unit for emitting red light, a second optical functional unit for emitting green light, and a third optical functional unit for emitting blue light;

[0021] The refractive index of the dimming unit corresponding to the second optical functional unit is greater than the refractive index of the dimming unit corresponding to the first optical functional unit, and less than the refractive index of the dimming unit corresponding to the third optical functional unit.

[0022] Optionally, the color conversion unit is located on the side of the functional layer opposite to the first substrate.

[0023] Optionally, the chip structure further includes: a filter unit, the filter unit being located between the first substrate and the color conversion unit, and the filter unit having a filter block, the orthographic projection of the filter block on the first substrate overlapping the orthographic projection of the optical functional unit on the first substrate.

[0024] Optionally, the filter unit is located between the dimming unit and the color conversion unit, or the filter unit is located between the first substrate and the filter unit.

[0025] On the other hand, a display substrate is provided, including: a driving backplate, and a plurality of chip structures arranged in an array on one side of the driving backplate, wherein the chip structures are the chip structures described above.

[0026] The beneficial effects of the technical solutions provided in this application include at least the following:

[0027] A chip structure includes a first substrate, a light-emitting unit, a color conversion unit, and a dimming unit. The refractive index of the dimming section in the dimming unit can be greater than the refractive index of the functional layer. Thus, light emitted from the sub-light-emitting functional layer in the light-emitting unit, after passing through the corresponding optical functional layer, can pass directly through the dimming section before exiting when it reaches the corresponding dimming section. Light with a large viewing angle can be adjusted by the combination of the dimming section with a higher refractive index and the functional layer with a lower refractive index, resulting in a smaller angle between these large-viewing-angle rays and the normal to the first substrate. This improves the light extraction efficiency of the chip structure at small viewing angles, ensuring higher brightness when viewed directly from the front, and resulting in better display performance on a subsequent display substrate integrating this chip structure. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 This is a top view of a chip structure provided in an embodiment of this application;

[0030] Figure 2 yes Figure 1 The diagram shows the film structure of the chip at point A-A';

[0031] Figure 3 This is a schematic diagram of the film layer structure of another chip structure provided in the embodiments of this application;

[0032] Figure 4 Is with Figure 3 The corresponding simplified optical path diagram of the chip structure;

[0033] Figure 5 This is a schematic diagram of the film layer structure of another chip structure provided in the embodiments of this application;

[0034] Figure 6 Is with Figure 5 The corresponding simplified optical path diagram of the chip structure;

[0035] Figure 7 This is a schematic diagram of the film layer structure of another chip structure provided in the embodiments of this application;

[0036] Figure 8 Is with Figure 7 The corresponding simplified optical path diagram of the chip structure;

[0037] Figure 9 This is a schematic diagram of the film structure of a chip structure provided in another embodiment of this application;

[0038] Figure 10 This is a top view of another chip structure provided in another embodiment of this application;

[0039] Figure 11 yes Figure 10 The diagram shows the film structure at point B-B' of the chip structure.

[0040] Figure 12 yes Figure 10 The diagram shows the film structure at C-C' of the chip structure.

[0041] Figure 13 This is a schematic diagram of the film structure of another chip structure provided in another embodiment of this application;

[0042] Figure 14 yes Figure 13 The diagram shows the film structure at point D-D' of the chip structure.

[0043] Figure 15 This is a top view of a first semiconductor layer provided in an embodiment of this application;

[0044] Figure 16 This is an illustration of the effect of generating an optical waveguide phenomenon inside a first semiconductor layer, provided in an embodiment of this application.

[0045] Figure 17 This is a top view of a light-emitting unit located on a connecting layer, provided in an embodiment of this application;

[0046] Figure 18 yes Figure 17 A schematic diagram of the film structure of the light-emitting unit at E-E' is shown;

[0047] Figure 19 This is a top view of another first semiconductor layer provided in an embodiment of this application;

[0048] Figure 20 This is a top view of another light-emitting unit provided in an embodiment of this application;

[0049] Figure 21 yes Figure 20 The diagram shows the film structure of the light-emitting unit at F-F'. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0051] Please refer to Figure 1 and Figure 2 , Figure 1 This is a top view of a chip structure provided in an embodiment of this application. Figure 2 yes Figure 1 The diagram shows the film structure of the chip structure at point A-A'. The chip structure 000 may include: a first substrate 100, a light-emitting unit 300, a color conversion unit 200, and a dimming unit 400.

[0052] In chip structure 000, the dimming unit 400 can be located between the first substrate 100 and the color conversion unit 200. The light-emitting unit 300 in chip structure 000 can be located on the side of the color conversion unit 200 facing away from the first substrate 100, and the color conversion unit 200 in chip structure 000 can be located on the light-emitting side of the light-emitting unit 300. In this case, the light emitted from the light-emitting unit 300 can be directed towards the color conversion unit 200, and then pass sequentially through the color conversion unit 200, the dimming unit 400, and the first substrate 100 before being emitted.

[0053] In this embodiment, the color conversion unit 200 in the chip structure 000 may include a limiting dam 201 and an optical functional unit 202. The limiting dam 201 may have an opening region K1, and the optical functional unit 202 may be located within the opening region K1. The optical functional unit 202 is used to convert the color of light entering the optical functional unit 202. For example, the limiting dam 201 may have multiple opening regions K1, and the number of optical functional units 202 in the color conversion unit 200 may also be multiple. Multiple optical functional units 202 may correspond one-to-one with multiple opening regions K1, and each optical functional unit 202 may be located within its corresponding opening region K1.

[0054] Here, the light-emitting unit 300 in the chip structure 000 may include multiple sub-light-emitting functional layers 300a. Each sub-light-emitting functional layer 300a in the light-emitting unit 300 may correspond one-to-one with a plurality of optical functional units 202 in the color conversion unit 200. The light-emitting side of each sub-light-emitting functional layer 300a in the light-emitting unit 300 may face the corresponding optical functional unit 202, and the orthographic projection of each sub-light-emitting functional layer 300a on the first substrate 100 may overlap with the orthographic projection of the corresponding optical functional unit 202 on the first substrate 100. For example, the orthographic projection of each sub-light-emitting functional layer 300a in the light-emitting unit 300 on the first substrate 100 may be located within the orthographic projection of the corresponding optical functional unit 202 on the first substrate 100. In this way, the light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 may be directed towards the corresponding optical functional unit 202, and after the corresponding optical functional unit 202 converts the color of this light, it passes through the dimming unit 400 and the first substrate 100 sequentially before being emitted.

[0055] In this embodiment, the dimming unit 400 in the chip structure 000 may include a functional layer 401 and a dimming section 402. The functional layer 401 of the dimming unit 400 has a dimming slot K2, and at least a portion of the dimming section 402 may be located within the dimming slot K2. For example, the dimming unit 400 may have multiple dimming slots K2, and the number of dimming sections 402 in the dimming unit 400 may also be multiple. The multiple dimming sections 402 may correspond one-to-one with the multiple dimming slots K2, and at least a portion of each dimming section 402 may be located within the corresponding dimming slot K2. Here, the multiple dimming slots K2 in the functional layer 401 may correspond one-to-one with the multiple opening regions K1 in the defining dam 201, and the orthographic projection of each dimming slot K2 on the first substrate 100 may overlap with the orthographic projection of the corresponding opening region K1 on the first substrate 100.

[0056] In this case, the multiple dimming units 402 in the dimming unit 400 can correspond one-to-one with the multiple optical functional units 202 in the color conversion unit 200, and the orthographic projection of each dimming unit 402 on the first substrate 100 can overlap with the corresponding optical functional unit 202 on the first substrate 100. In this way, the light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 passes through the corresponding optical functional unit 202, so that the corresponding optical functional unit 202 converts the color of the light, and then passes through the corresponding dimming unit 402 in the dimming unit 400 and the first substrate 100 in sequence before being emitted.

[0057] In this application, the refractive index of the dimming section 402 in the dimming unit 400 can be greater than the refractive index of the functional layer 401. Thus, after the light emitted from the sub-light-emitting functional layer 300a in the light-emitting unit 300 passes through the corresponding optical functional section 202, the light emitted from the optical functional layer 202, as it travels towards the corresponding dimming section 402, allows light rays with small viewing angles (i.e., a smaller angle between the emission direction and the normal of the first substrate 100) to pass directly through the corresponding dimming section 402 before exiting. Light rays with large viewing angles (i.e., a larger angle between the emission direction and the normal of the first substrate 100) can be adjusted through the cooperation of the dimming section 402 with a larger refractive index and the functional layer 401 with a smaller refractive index, resulting in a smaller angle between these large-viewing-angle rays and the normal of the first substrate 100 after adjustment. This improves the light emission efficiency of the chip structure 000 at narrow viewing angles, ensuring higher brightness when viewed directly, and resulting in better display performance for the display substrate that integrates this chip structure 000.

[0058] In summary, the chip structure provided in this application includes: a first substrate, a light-emitting unit, a color conversion unit, and a dimming unit. The refractive index of the dimming section in the dimming unit can be greater than the refractive index of the functional layer. Thus, when light emitted from the sub-light-emitting functional layer in the light-emitting unit passes through the corresponding optical functional layer, light rays exiting the optical functional layer can directly pass through the corresponding dimming section before exiting, while light rays with large viewing angles can be adjusted through the cooperation of the dimming section with a higher refractive index and the functional layer with a lower refractive index. This results in a smaller angle between these large-viewing-angle rays and the normal to the first substrate. This improves the light extraction efficiency of the chip structure at small viewing angles, ensuring higher brightness when viewed directly, and resulting in better display performance on the subsequent display substrate integrating this chip structure.

[0059] It should be noted that the refractive indices mentioned in this application are all the refractive indices corresponding to 632.8nm light.

[0060] In this application embodiment, there are several structural types of the dimming unit 400 in the chip structure 000. This application embodiment will use the following three optional implementation methods as examples for illustration:

[0061] The first optional implementation method, such as Figure 3 As shown, Figure 3 This is a schematic diagram of the film layer structure of another chip structure provided in this application embodiment. The functional layer 401 in the dimming unit 400 has a first surface S1 facing the first substrate 100 and a second surface S2 disposed opposite to the first surface S1. The dimming slot K2 in the functional layer 401 can be a through slot extending from the first surface S1 to the second surface S2, and the angle θ between the sidewall of the through slot and the second surface S2 can be an acute angle. It should be noted that, due to the fabrication process of the functional layer 401, the sidewall of the through slot in the functional layer 401 is usually an arc-shaped convex surface. Therefore, the angle θ between the sidewall of the through slot and the second surface S2 here refers to the angle between the approximate plane and the second surface S2 after approximating the arc-shaped convex surface as a plane. Here, the two sides at both ends of the arc-shaped convex surface can be connected, and the connected plane is the approximate plane.

[0062] In this case, please refer to Figure 4 , Figure 4 Is with Figure 3The corresponding simplified optical path diagram of the chip structure shows that the light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300, after passing through the corresponding optical functional section 202, can then be directed towards the corresponding dimming slot K2 in the functional layer 401. Since at least a portion of the dimming section 402 in the dimming unit 400 can fill the dimming slot K2, the light emitted from the optical functional section 202 can enter the dimming section 402 filled within the dimming slot K2. Here, among the light rays entering the dimming section 402, light rays with a small viewing angle can directly pass through the dimming section 402 and exit, while light rays with a large viewing angle can be directed towards the inner wall of the dimming slot K2. Furthermore, since the dimming slot K2 is a through slot, the angle θ between the sidewall of the through slot and the second surface S2 is an acute angle, and the refractive index of the functional layer 401 is relatively small, while the refractive index of the dimming part 402 filling the dimming slot K2 of the functional layer 401 is relatively high. Therefore, the large-angle light rays in the light rays incident on the dimming part 402 can be totally reflected by the inner wall of the dimming slot K2 after hitting it. The reflected light rays can exit from the dimming part 402 towards the first substrate 100, and the angle between the reflected light rays exiting from the dimming part 402 and the normal of the first substrate 100 is small, thereby improving the light extraction efficiency of the chip structure 000 at small-angle orientations.

[0063] Optional, such as Figure 3 As shown, the dimming unit 400 in the chip structure 000 may further include a planar cover layer 403 located on the side of the functional layer 401 facing away from the first substrate 100. The planar cover layer 403 may cover both the functional layer 401 and the dimming unit 402. That is, the orthographic projections of the functional layer 401 and the dimming unit 402 onto the first substrate 100 are both located within the orthographic projection of the planar cover layer 403 onto the first substrate 100.

[0064] In this application, the refractive index of the planar cover layer 403 in the dimming unit 400 may also be greater than the refractive index of the functional layer 401. In one possible implementation, the refractive index of the planar cover layer 403 may be the same as the refractive index of the dimming section 402.

[0065] For example, the flat cover layer 403 in the dimming unit 400 can be integrally formed with the dimming part 402. Here, a portion of the flat cover layer 403 can be located on the side of the functional layer 401 away from the first substrate 100 and is in contact with the side of the functional layer 401 away from the first substrate 100; another portion of the flat cover layer 403 can be located on the side of the dimming part 402 away from the first substrate and is connected to the side of the dimming part 402 away from the first substrate 100.

[0066] In this configuration, during the formation of the dimming unit 400 in the chip structure 000, a functional layer 401 with a dimming slot K2 can be formed first, followed by a planarization layer formed on the functional layer 401. The portion of the planarization layer located within the dimming slot K2 is the dimming section 402, and the portion of the planarization layer located on the functional layer 401 and the dimming section 402 is the planarization cover layer 403. Therefore, the side of the planarization cover layer 403 facing away from the first substrate 100 is a plane with high flatness, allowing the color conversion units 200 in the chip structure 000 to be normally distributed on the side of the planarization cover layer 403 facing away from the first substrate 100.

[0067] Here, the material of the functional layer 401 can be a resin-based organic material. In the process of forming the functional layer 401, an organic film layer can be formed first, and then the organic film layer can be exposed, developed and dried to obtain the functional layer 401 with multiple dimming grooves K2.

[0068] The planarization layer, composed of the planarization capping layer 403 and the dimming section 402, can also be made of a resin-based organic material, and these organic materials are doped with high-refractive-index particles, such as zirconium dioxide. After forming the functional layer 401 with multiple dimming slots K2, the planarization layer can be obtained by forming an entire layer of the organic material doped with high-refractive-index particles on the functional layer 401. When the planarization layer on the functional layer 401 is formed using an organic material doped with high-refractive-index particles, it can be ensured that the refractive index of the dimming section 402 within the planarization layer is higher than the refractive index of the functional layer 401.

[0069] It should be noted that, in order to ensure that light rays with a wide viewing angle can be better totally reflected by the inner wall of the dimming slot K2, the difference between the refractive index of the dimming unit 402 and the refractive index of the functional layer 401 needs to be relatively large. For example, the difference between the refractive index of the dimming unit 402 and the refractive index of the functional layer 401 should be greater than or equal to 0.3. That is, the refractive index of the dimming unit 402 is more than 0.3 higher than that of the functional layer 401, to ensure that the refractive index of the dimming unit 402 is significantly different from that of the functional layer 401. For example, the refractive index of the functional layer 401 ranges from 1.2 to 1.5; the refractive index of the dimming unit 402 ranges from 1.6 to 1.9.

[0070] In the embodiments of this application, such as Figure 4 As shown, in order to ensure that the wide-angle light rays in the light rays incident on the dimming section 402 can be totally reflected by the inner wall of the dimming slot K2 after hitting the inner wall of the dimming slot K2, it is necessary to limit the distance between the first surface S1 and the second surface S2 in the functional layer 401 (that is, the thickness of the functional layer 401), the angle θ between the side wall of the dimming slot K2 and the second surface S2, and other structural features in the chip structure 000.

[0071] For example, according to the principle of total internal reflection, the characteristics of each structure in chip structure 000 satisfy the following conditions:

[0072] n1×sinα0=n2×sin90° (1)

[0073]

[0074]

[0075] In formula (1), n1 represents the refractive index of the dimming unit 402, and n2 represents the refractive index of the functional layer 401. Therefore, after determining the refractive index n1 of the dimming unit 402 and the refractive index n2 of the functional layer 401, the reflection angle α0 when the light rays incident on the sidewall of the dimming slot K2 just meet the total internal reflection condition can be calculated according to formula (1). Here, the reflection angle α0 when the light rays incident on the sidewall of the dimming slot K2 just meet the total internal reflection condition can be in the range of 40° to 70°. It should be noted that the reflection angle α0 is the angle between the transmission direction of the light rays reflected by the sidewall of the dimming slot K2 and the normal to the sidewall of the dimming slot K2 when the light rays incident on the sidewall of the dimming slot K2 just meet the total internal reflection condition.

[0076] In formula (2), β0 represents the divergence angle of the light emitted from the optical functional unit 202. This divergence angle β0 can be in the range of 60° to 89°. y represents the width of the lateral region of the light-emitting region of the optical functional unit 202 that can be reflected by the sidewall of one side of the dimming slot K2; Y represents the width of the region of the light-emitting region of the optical functional unit 202 that will not be reflected towards the dimming unit 402. Here, the value of (Y+y) can be greater than 0 and less than half the width of the light-emitting region of the optical functional unit 202. x represents the position of the light rays emitted from the optical functional unit 202 with an emission direction equal to the divergence angle β0 that strike the sidewall of the dimming slot K2, and the horizontal distance between the sidewall adjacent to the optical functional unit 202; H represents the thickness of the flat cover layer 403, which is the distance between the side of the dimming unit 400 furthest away from the first substrate 100 and the functional layer 402, and the thickness H of the flat cover layer 403 can be in the range of 10 micrometers to 40 micrometers. Therefore, after determining the range of values ​​for these parameters, the range of values ​​for the angle θ between the sidewall of the dimming slot K2 and the second surface S2 can be calculated according to formula (2).

[0077] It should be noted that in other possible implementations, the range of the angle θ between the sidewall of the dimming slot K2 and the second surface S2 can also be determined by simulating the light emitted from the chip structure 000 integrating the dimming unit 400. During the simulation, it was found that when the angle θ between the sidewall of the dimming slot K2 and the second surface S2 is less than 30°, the light rays incident on the sidewall of the dimming slot K2 will no longer undergo total reflection, resulting in total internal reflection failure. The larger the angle θ between the sidewall of the dimming slot K2 and the second surface S2, the greater the probability of total internal reflection. Furthermore, to ensure that the light rays incident on the sidewall of the dimming slot K2 can be reflected and emitted normally, the angle θ between the sidewall of the dimming slot K2 and the second surface S2 needs to be less than 90°. Therefore, the angle θ between the sidewall of the dimming slot K2 and the second surface S2 should be within the range of 30° to 90°.

[0078] It should also be noted that during the simulation, it was found that when the angle θ between the sidewall of the dimming slot K2 and the second surface S2 is greater than 70°, the gain of the chip structure 000 in the forward viewing angle is relatively small. Furthermore, since the smaller the angle θ between the sidewall of the dimming slot K2 and the second surface S2, the greater the difficulty in fabricating this functional layer 401 with the dimming slot K2, the angle θ between the sidewall of the dimming slot K2 and the second surface S2 usually needs to be greater than or equal to 35°. Therefore, the angle θ between the sidewall of the dimming slot K2 and the second surface S2 can be in the range of 35° to 70°.

[0079] Based on formulas (2) and (3), the formula for calculating the distance between the first surface S1 and the second surface S2 in the functional layer 401 (that is, the thickness h of the functional layer 401) can be derived:

[0080]

[0081] Therefore, the range of the thickness h of the functional layer 401 can be calculated according to the formula (4).

[0082] It should be noted that, theoretically, the greater the thickness h of the functional layer 401, the greater the probability of total internal reflection of light incident on the sidewall of the dimming slot K2 of the functional layer 401. However, since a thicker functional layer 401 is more difficult to fabricate, the thickness h of the functional layer 401 can be determined by considering both the probability of total internal reflection of light incident on the sidewall of the dimming slot K2 and the fabrication difficulty of the functional layer 401. Here, the thickness h of the functional layer 401 can be in the range of 4 micrometers to 6 micrometers.

[0083] The second optional implementation method, such as Figure 5 As shown, Figure 5 This is a schematic diagram of the film layer structure of another chip structure provided in the embodiments of this application. The dimming slot K2 in the functional layer 401 of the dimming unit 400 can be a blind slot that does not penetrate the functional layer 401, and the blind slot can be distributed on the side of the functional layer 401 facing the first substrate 100. The dimming part 402 in the dimming unit 400 can be entirely distributed in this blind slot, and the dimming part 402 can be in close contact with the inner wall of the blind slot.

[0084] In this case, during the formation of the dimming unit 400 in the chip structure 000, multiple independently distributed dimming sections 402 can be formed first, and then a thicker functional layer 401 can be formed on the multiple dimming sections 402 to cover each dimming section 402. For this purpose, multiple dimming slots K1 corresponding to and cooperating with the multiple dimming sections 402 can be formed on the side of the functional layer 401 facing the first substrate 100, while the side of the functional layer 401 facing away from the first substrate 100 is a plane with high flatness, and the color conversion units 200 in the chip structure 000 can be distributed on the side of the functional layer 401 facing away from the first substrate 100.

[0085] Here, the blind trench provided on the side of the functional layer 401 facing the first substrate 100 has various shapes, and correspondingly, the dimming unit 402 distributed within this blind trench also has various shapes. This application embodiment will be described using the following two exemplary cases as examples:

[0086] The first exemplary case is as follows: Figure 5 As shown, each dimming unit 402 in the dimming unit 400 may have: a third surface S3 facing the first substrate 100, a fourth plane S4 disposed opposite to the third surface S3, and a first outer contour surface S5 located between the third surface S3 and the fourth plane S4. The first outer contour surface S5 may be the outer surface of the dimming unit 402.

[0087] In the dimming unit 402, the angle β1 between the first outer contour surface S5 and the third surface S3 is an acute angle, and the angle β2 between the first outer contour surface S5 and the fourth surface S4 is an obtuse angle.

[0088] In this case, please refer to Figure 6 , Figure 6 Is with Figure 5The corresponding simplified optical path diagram of the chip structure shows that the light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 passes through the corresponding optical functional section 202, and the light emitted from the corresponding optical functional section 202 can pass through the functional layer 401 and then be directed to the corresponding dimming section 402. Here, among the light rays entering the dimming section 402, light rays with a small viewing angle can pass directly through the dimming section 402 and then be emitted, while light rays with a large viewing angle can be directed to the outer surface of the dimming section 402. Since the dimming unit 400 can be in close contact with the dimming slot K2 in the functional layer 401, the angle β2 between the first outer contour surface S5 and the fourth surface S4 in the dimming section 402 is an obtuse angle, and the refractive index of the functional layer 401 is relatively small, while the refractive index of the dimming section 402 filling the dimming slot K2 in the functional layer 401 is relatively high. Therefore, the wide-angle light rays in the light rays incident on the dimming section 402 can be totally reflected by the outer surface of the dimming section 402 after they are incident on the outer surface of the dimming section 402. The reflected light rays can be emitted from the dimming section 402 towards the side of the first substrate 100 (i.e., the third surface S3). Moreover, the angle between the reflected light rays emitted from the dimming section 402 and the normal of the first substrate 100 is small, which can improve the light emission efficiency of the chip structure 000 in the direction of the small angle.

[0089] In this application, the material of each dimming section 402 can be a resin-based organic material, and these organic materials are doped with high-refractive-index particles, such as zirconium dioxide. In the process of forming multiple independently distributed dimming sections 402, an organic film layer doped with high-refractive-index particles can be formed first, and then this organic film layer can be exposed, developed, and dried to obtain multiple independently distributed dimming sections 402. Here, when using an organic material doped with high-refractive-index particles to form the dimming section 402, it can be ensured that the refractive index of the dimming section 402 is higher than the refractive index of the functional layer 401.

[0090] It should be noted that, in order to ensure that light rays with a wide viewing angle can be better totally internally reflected by the outer surface of the dimming unit 402, the difference between the refractive index of the dimming unit 402 and the refractive index of the functional layer 401 needs to be relatively large. For example, the difference between the refractive index of the dimming unit 402 and the refractive index of the functional layer 401 should be greater than or equal to 0.3. That is, the refractive index of the dimming unit 402 can be more than 0.3 higher than the refractive index of the functional layer 401 to ensure that the refractive index of the dimming unit 402 is significantly different from that of the functional layer 401. For example, the refractive index of the functional layer 401 ranges from 1.2 to 1.5; the refractive index of the dimming unit 402 ranges from 1.6 to 1.9.

[0091] In the embodiments of this application, such as Figure 6As shown, based on the aforementioned principle of total internal reflection, the range of the supplementary angle θ of the angle β2 between the first outer contour surface S5 and the fourth surface S4 in the dimming unit 402 can also be calculated using the above formula. This range of θ can also be determined by simulating the light emitted from the chip structure 000 integrating the dimming unit 400. During the simulation, it was found that when this supplementary angle θ is less than 30°, the light rays incident on the sidewall of the dimming slot K2 will no longer undergo total reflection, resulting in total internal reflection failure. The larger this supplementary angle θ is, the greater the probability of total internal reflection of the light rays incident on the outer surface of the dimming unit 402. Furthermore, to ensure that the light rays incident on the sidewall of the dimming slot K2 can be reflected and emitted normally, this supplementary angle θ needs to be less than 90°. Therefore, this supplementary angle θ is within the range of 30° to 90°. That is, the angle β2 between the first outer contour surface S5 and the fourth surface S4 in the dimming unit 402 is in the range of 90° to 150°.

[0092] It should also be noted that during the simulation process, it was found that when the supplementary angle θ is greater than 70°, the gain of the chip structure 000 in the forward viewing angle is relatively small. Furthermore, since the smaller the supplementary angle θ, the greater the difficulty in fabricating this dimming unit 402, this supplementary angle θ typically needs to be greater than or equal to 35°. Therefore, this supplementary angle θ can be in the range of 35° to 70°. That is, the angle β2 between the first outer contour surface S5 and the fourth surface S4 in the dimming unit 402 is in the range of 110° to 145°.

[0093] Similarly, the thickness range of the dimming section 402 can also be calculated using the formula described above. Theoretically, the greater the thickness h of the dimming section 402, the greater the probability of total internal reflection of light incident on its outer surface. However, since a thicker dimming section 402 is more difficult to fabricate, the thickness h of the dimming section 402 can be determined by considering both the probability of total internal reflection and the fabrication difficulty. Here, the thickness h of the dimming section 402 can be in the range of 4 micrometers to 6 micrometers.

[0094] The second exemplary case is as follows: Figure 7 As shown, Figure 7 This is a schematic diagram of the film layer structure of another chip structure provided in the embodiments of this application. Each dimming part 402 in the dimming unit 400 may have: a third surface S3 facing the first substrate 100, and an arc surface S6 disposed opposite to the third surface S3. The arc surface S6 is an arc surface protruding towards the color conversion unit 200.

[0095] In this case, the dimming unit 402 in the dimming unit 400 is a convex lens. Utilizing the principle of light convergence by a convex lens, light emitted from a wide angle can be adjusted to a narrow angle before being emitted. For an example, please refer to... Figure 8 , Figure 8 Is with Figure 7 The corresponding simplified optical path diagram of the chip structure shows that the light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 passes through the corresponding optical functional section 202, and then the light emitted from the corresponding optical functional section 202 can pass through the functional layer 401 and be directed towards the corresponding dimming section 402. Here, since the dimming section 402 is an arc surface S6 facing away from the first substrate 100, and this arc surface S6 is an arc surface that convexes towards the color conversion unit 200, the light entering the dimming section 402 can be converged in the dimming section 402, so that the large-angle light rays in the light rays entering the dimming section 402 are adjusted into small-angle light rays, and then emitted from the dimming section 402 towards the side of the first substrate 100 (i.e., the third surface S3), thereby improving the light extraction efficiency of the chip structure 000 in the small-angle orientation.

[0096] It should be noted that the materials of the dimming unit 402 and the functional layer 401 can refer to the corresponding content in the first example above, and will not be repeated here.

[0097] In this application, during the process of forming multiple independently distributed dimming sections 402, an organic ink droplet in the shape of a water droplet can be printed on the first substrate 100 by inkjet printing, and then the organic ink droplet is cured to obtain the dimming section 402, and it can be ensured that the side of the dimming section 402 facing away from the first substrate 100 is an arc surface.

[0098] In order to ensure that the dimming part 402 with an arc surface can be better formed by inkjet printing, the surface of the first substrate 100 needs to be hydrophobically treated before inkjet printing. This makes the surface of the first substrate 100 hydrophobic, so that when organic ink droplets are printed on the first substrate 100 by inkjet printing, the organic ink droplets can form an arc-shaped curved surface away from the surface of the first substrate 100. After curing, the dimming part 402 with an arc surface can be obtained.

[0099] In one possible implementation, such as Figure 7 As shown, the dimming unit 400 in the chip structure 000 may further include a hydrophobic layer 404 located between the first substrate 100 and the dimming section 402, wherein the refractive index of the hydrophobic layer 404 may be lower than that of the dimming section 402. Since the surface of the hydrophobic layer 404 may be hydrophobic, printing organic ink droplets on the surface of the hydrophobic layer 404 can ensure that the organic ink droplets facing away from the surface of the first substrate 100 can form an arc-shaped curved surface.

[0100] For example, the hydrophobic layer 400 can be made of an inorganic material, such as silicon nitride, silicon oxide, or silicon oxynitride. The thickness of the hydrophobic layer 400 can be in the range of 50 nanometers to 200 nanometers. The thinness and low refractive index of the hydrophobic layer 400 will not interfere with the light emitted from the dimming unit 404.

[0101] In the embodiments of this application, such as Figure 7 As shown, when the side of the dimming unit 402 facing away from the first substrate 100 is an arc surface S6, the orthographic projection of each dimming unit 202 in the dimming unit 200 onto the first substrate 100 can cover the orthographic projection of the optical functional unit 202 onto the first substrate 100. This ensures that the light emitted from each optical functional unit 202 can be directed towards the corresponding dimming unit 402, and under the focusing effect of the dimming unit 402, the wide-angle light emitted from the optical functional unit 202 can be adjusted to a narrow-angle light.

[0102] Optional, such as Figure 7 As shown, when the side of the dimming unit 402 facing away from the first substrate 100 is an arc surface S6, the shape of the orthographic projection of the dimming unit 402 on the first substrate 100 can be circular, and the shape of the orthographic projection of the optical functional unit 202 on the first substrate 100 can be rectangular. Therefore, the diameter of the orthographic projection of the dimming unit 402 on the first substrate 100 needs to be greater than the length of the hypotenuse of the diagonal of the orthographic projection of the corresponding optical functional unit 202 on the first substrate 100, to ensure that the orthographic projection of the optical functional unit 202 on the first substrate 100 can be located within the orthographic projection of the corresponding dimming unit 402 on the first substrate 100.

[0103] In the embodiments of this application, such as Figure 8 As shown, when the side of the dimming unit 402 facing away from the first substrate 100 is an arc surface S6, the aperture-to-height ratio of the dimming unit 402 is in the range of 4 / 1 to 5 / 1. Here, the aperture D of the dimming unit 402 refers to the diameter of the orthographic projection of the dimming unit 402 onto the first substrate 100; the height h of the dimming unit 402 refers to the maximum distance between the third surface S3 and the arc surface S6 of the dimming unit 402.

[0104] In this application, as Figure 7As shown, the dimming unit 400 in the chip structure 000 may include a plurality of dimming sections 402; the color conversion unit 200 in the chip structure 000 may include a plurality of optical functional sections 202. The plurality of dimming sections 402 and the plurality of optical functional sections 202 can correspond one-to-one. The orthographic projection of each optical functional section 202 on the first substrate 100 can cover the orthographic projection of the corresponding optical functional section 402 on the first substrate 100. Here, any two different dimming sections 402 in the dimming unit 400 have different refractive indices. Optionally, the refractive index of each dimming section 402 in the dimming unit 400 can be in the range of 1.6 to 1.9. The refractive index of the functional layer 401 in the dimming unit 400 is in the range of 1.2 to 1.5.

[0105] For example, chip structure 000 can have red sub-pixels, green sub-pixels, and blue sub-pixels. The dimming unit 400 has three dimming sections 402, and the color conversion unit 200 also has three optical functional sections 202. The three dimming sections 402 in the dimming unit 400 each belong to a portion of the red, green, and blue sub-pixels; similarly, the three optical functional sections 202 in the color conversion unit 200 can also each belong to a portion of the red, green, and blue sub-pixels.

[0106] Here, the multiple optical functional units 202 in the color conversion unit 200 may include: a first optical functional unit for emitting red light, a second optical functional unit for emitting green light, and a third optical functional unit for emitting blue light. That is, the first optical functional unit may be a part of the red sub-pixel, the second optical functional unit may be a part of the green sub-pixel, and the third optical functional unit may be a part of the blue sub-pixel.

[0107] It should be noted that since the wavelengths of the light emitted by each optical functional unit 202 in the color conversion unit 200 are different, in order to ensure that different dimming units 402 have a good focusing effect when focusing light of different wavelengths, the different dimming units 402 in the dimming unit 400 can be designed with different refractive indices.

[0108] In one possible implementation, the refractive index of the dimming unit 402 corresponding to the second optical functional unit for emitting green light can be greater than the refractive index of the dimming unit 402 corresponding to the first optical functional unit for emitting red light, and less than the refractive index of the dimming unit 402 corresponding to the third optical functional unit for emitting blue light.

[0109] For example, please refer to Table 1, which shows the following: Figure 7 A table showing the relationship between the dimensions of each structural feature in the provided chip structure 000 and the gain of the chip structure 000 from the forward viewing angle.

[0110] Table 1

[0111]

[0112] The forward brightness gain of the chip structure refers to the percentage of the forward light emission brightness of the chip structure 000 when using the dimming unit 400, compared to the forward light emission brightness of the chip structure 000 when not using the dimming unit 400. Therefore, according to Table 1, using the dimming unit 500 in the chip structure 000 can effectively improve the forward light emission brightness of the chip structure 000.

[0113] It should be noted that Table 1 above refers to... Figure 7 The results obtained after simulation in the corresponding embodiment are, that is, the results obtained after simulating the light emitted from the chip structure 000 when the dimming part 402 in the dimming unit 400 is a convex lens.

[0114] It should also be noted that in the simulations provided in Table 1, good gain effects can be obtained when the values ​​of the lateral width of the aperture area, the vertical width of the aperture area, the aperture of the dimming unit, the supply height of the dimming unit, and the refractive index of the dimming unit are varied within a certain adjustable range. For example, the values ​​of the lateral width of the aperture area, the vertical width of the aperture area, the aperture of the dimming unit, the supply height of the dimming unit, and the refractive index of the dimming unit can all be adjusted within ±5% to ensure good positive brightness gain of the chip structure.

[0115] Optional, such as Figure 8 As shown, the distance H0 between the side of the functional layer 401 in the dimming unit 400 that is away from the first substrate 100 and the first substrate 100 can be greater than or equal to twice the arch height of the dimming part 402, so as to ensure that the functional layer 401 can play a flattening role on the dimming part 402.

[0116] In the embodiments of this application, such as Figure 3 , Figure 5 and Figure 7As shown, the chip structure 000 may further include a filter unit 500. The filter unit 500 may be located between the first substrate 100 and the color conversion unit 200, and the filter unit 500 may have filter blocks 501. Here, the number of filter blocks 501 in the filter unit 500 can be multiple, and multiple filter blocks 501 can correspond one-to-one with multiple optical functional units 202. The orthographic projection of each optical functional unit 202 on the first substrate 100 can overlap with the orthographic projection of the corresponding filter block 501 on the first substrate 100. For example, the orthographic projection of each optical functional unit 202 on the substrate 100 can be located within the orthographic projection of the corresponding filter block 501 on the first substrate 100. In this way, after the optical functional unit 202 converts the extension of light, the color-converted light can all pass through the corresponding filter block 501 before being emitted. The filter block 501 can filter out the light that has not undergone color conversion, so that only the color-converted light can pass through the first substrate 100 and be emitted.

[0117] Optionally, the filter unit 500 may further include a light-shielding layer 502, which may have multiple light-passing ports K3 corresponding one-to-one with the multiple filter blocks 501. At least a portion of each filter block 501 may be located within the corresponding light-passing port K3. Here, by setting the light-shielding layer 502, it can be ensured that light emitted from the side of a certain filter block 501 can be absorbed by the light-shielding layer 502, thereby effectively reducing the probability of color crosstalk in the chip structure 000.

[0118] In this application embodiment, the distribution positions of the filter unit 500 are varied. This application embodiment will illustrate with the following two cases as examples:

[0119] The first case, such as Figure 3 , Figure 5 and Figure 7 As shown, the filter unit 500 can be located between the dimming unit 400 and the color conversion unit 300. Thus, the filter unit 500 can be disposed in contact with the side of the dimming unit 400 facing away from the first substrate 100, and the color conversion unit 300 can also be disposed in contact with the side of the filter unit 500 facing away from the substrate 100. Light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 can sequentially pass through the corresponding optical functional layer 202, the filter block 501, the dimming unit 402, and the first substrate 100 before exiting.

[0120] The second scenario, such as Figure 9 As shown, Figure 9This is a schematic diagram of a film layer structure for a chip structure according to another embodiment of this application. The filter unit 500 can be located between the first substrate 100 and the filter unit 200. Thus, the filter unit 500 can be in contact with the first substrate 100, and the dimming unit 400 can be in contact with the side of the filter unit 500 opposite to the first substrate 100. The color conversion unit 300 can also be in contact with the side of the dimming unit 400 opposite to the substrate 100. Light emitted from each sub-light-emitting functional layer 300a in the light-emitting unit 300 can sequentially pass through the corresponding optical functional layer 202, the dimming unit 402, the filter block 501, and the first substrate 100 before exiting.

[0121] Optional, such as Figure 3 , Figure 5 , Figure 7 and Figure 9 As shown, the color conversion unit 200 in the chip structure 000 may further include a first encapsulation layer 203 and a second encapsulation layer 204. The first encapsulation layer 203 in the color conversion unit 200 may be located on the side of the limiting dam 201 facing away from the first substrate 100. The second encapsulation layer 204 in the color conversion unit 200 may be located on the side of the limiting dam 201 facing the first substrate 100. Here, both the first encapsulation layer 203 and the second encapsulation layer 204 are film layer structures that are continuously distributed at each location.

[0122] The first encapsulation layer 203 can be disposed in contact with the side of the limiting dam 201 and the optical functional unit 202 opposite to the first substrate 100, and the first encapsulation layer 203 can also be disposed in contact with the outer surface of the limiting dam 201. The second encapsulation layer 204 can be disposed in contact with the side of the limiting dam 201 and the optical functional unit 202 facing the first substrate 100. A portion of the first encapsulation layer 203 can be disposed in contact with a portion of the second encapsulation layer 204.

[0123] Therefore, the orthographic projections of the limiting dam 201 and the optical functional unit 202 on the first substrate 100 are both located within the orthographic projection of the first encapsulation layer 203 on the first substrate 100, and also within the orthographic projection of the second encapsulation layer 204 on the first substrate 100. Simultaneously, when the second encapsulation layer 204 and the first encapsulation layer 203 are in contact, the cooperation between the first encapsulation layer 203 and the second encapsulation layer 204 can completely encapsulate the limiting dam 201 and the optical functional unit 202. This allows the first encapsulation layer 203 and the second encapsulation layer 204 to encapsulate the limiting dam 201 and the optical functional unit 202, preventing water and oxygen from the external environment from penetrating the limiting dam 201 and corroding the optical functional unit 202. This ensures that the optical functional unit 202 can stably convert the color of light, resulting in high reliability of the optical functional unit 202.

[0124] In this application, as Figure 10, Figure 11 and Figure 12 As shown, Figure 10 This is a top view of another chip structure provided in another embodiment of this application. Figure 11 yes Figure 10 The diagram shown illustrates the film structure at point B-B' in the chip structure. Figure 12 yes Figure 10 The diagram shows the film structure at C-C' of the chip structure. The multiple sub-light-emitting functional layers in the light-emitting unit 300 may include: a first sub-light-emitting functional layer 300a1, a second sub-light-emitting functional layer 300a2, and a third sub-light-emitting functional layer 300a3. Here, the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 are all used to emit a first light beam in the operating state.

[0125] Accordingly, the multiple opening areas in the defined dam 201 may include: a first opening area K11, a second opening area K12, and a third opening area K13. The first opening area K11 may be positioned opposite to the first sub-light-emitting functional layer 300a1, the second opening area K12 may be positioned opposite to the second sub-light-emitting functional layer 300a2, and the third opening area K13 may be positioned opposite to the third sub-light-emitting functional layer 300a3.

[0126] Here, the first opening region K11 and the second opening region K12 are arranged in a row along the first direction X, and the second opening region K12 and the third opening region K13 are arranged in a row along the second direction Y. The first direction X intersects the second direction Y. For example, the first direction X can be perpendicular to the second direction Y. In this application, the area enclosed by the outer contour of the dam 201 is defined as rectangular; the shapes of the first opening region K11, the second opening region K12, and the third opening region K13 are all rectangular.

[0127] The multiple optical functional units 202 in the color conversion unit 200 may include: a first optical functional unit 202a, a second optical functional unit 202b, and a third optical functional unit 202c. The first optical functional unit 202a may be located within a first opening region K11, the second optical functional unit 202b may be located within a second opening region K12, and the third optical functional unit 202c may be located within a third opening region K13.

[0128] In this configuration, the first light emitted from the first sub-light-emitting functional layer 300a1 can be directed to the first optical functional unit 202a, where it is converted into light of another color. The first light emitted from the second sub-light-emitting functional layer 300a1 can be directed to the second optical functional unit 202b, where it is converted into light of a different color. The first light emitted from the third sub-light-emitting functional layer 300a3 can be directed to the third optical functional unit 202c, where it can either pass through or be converted by the third optical functional unit 202c.

[0129] For example, chip structure 000 may have a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The first light emitted by the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 in the light-emitting unit 300 all include at least one of blue light and ultraviolet light.

[0130] Here, the first optical functional unit 202a is used to convert the first light ray into red light. For example, the first optical functional unit 202a includes red quantum dots that convert the first light ray into red light; preferably, the first optical functional unit 202a also includes scattering particles for scattering the light. Here, the first light ray emitted from the first sub-light-emitting functional layer 300a1, after striking the first optical functional unit 202a distributed within the first opening region K11, is converted into red light by the red quantum dots, and the first light ray and red light are scattered by the scattering particles. This ensures that more of the first light ray can be converted into red light by the red quantum dots, and that the converted red light has a large emission angle, thus ensuring a large viewing angle for the display substrate integrating this chip structure 000. Therefore, the red sub-pixel R in the chip structure 000 can include: a first sub-light-emitting functional layer 300a2 and a first optical functional unit 202a.

[0131] The second optical functional unit 202b is used to convert the first light beam into green light. For example, the second optical functional unit 202b includes green quantum dots for converting the first light beam into green light; preferably, the second optical functional unit 202b also includes scattering particles for scattering the light. Here, the first light beam emitted from the second sub-light-emitting functional layer 300a2, after striking the second optical functional unit 202b distributed within the second opening region K12, is converted into green light by the green quantum dots, and the scattering particles scatter both the first light beam and the green light, ensuring that more of the first light beam can be converted into green light by the green quantum dots, and ensuring that the converted green light has a large exit angle, thus ensuring a large viewing angle for the display substrate integrating this chip structure 000. Therefore, the red sub-pixel R in the chip structure 000 can include: a first sub-light-emitting functional layer 300a1 and a first optical functional unit 202a. Therefore, the green sub-pixel G in the chip structure 000 can include: a second sub-light-emitting functional layer 300a2 and a second optical functional unit 202b.

[0132] The third optical functional unit 202c is used to convert the first light beam into blue light or maintain blue light emission. For example, when the first light beam contains only blue light, the third optical functional unit 202c can be a transparent part or can include blue quantum dots; wherein, the transparent part is used for direct transmission of the first light beam, and the blue quantum dots can be used to convert the first light beam into blue light with a wavelength different from that of the first light beam. Preferably, the third optical functional unit 202c also includes scattering particles that scatter light. Here, the first light beam emitted by the third sub-light-emitting functional layer 300a3, after striking the third optical functional unit 202c distributed in the third opening region K13, can be scattered by the scattering particles to ensure a large emission angle of the blue light, thereby ensuring a large viewing angle of the display substrate integrating this chip structure 000. For example, when the first light ray contains ultraviolet light, the third optical functional unit 202c includes blue quantum dots that convert the first light ray into blue light, or the third optical functional unit 202c simultaneously contains scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the first light ray emitted from the second sub-light-emitting functional layer 300a2 is incident on the third optical functional unit 202c distributed in the third opening region K13, the blue quantum dots can convert the ultraviolet light in the first light ray into blue light, and the scattering particles can scatter both the first light ray and the blue light, ensuring that more ultraviolet light is converted into blue light by the blue quantum dots, and ensuring that the emitted angle of the converted blue light is large, so as to ensure that the display substrate integrating this chip structure 000 has a large viewing angle. Therefore, the blue sub-pixel B in the chip structure 000 can include: the third sub-light-emitting functional layer 300a3 and the third optical functional unit 202c.

[0133] In this application, when the material of the limiting dam 201 includes a reflective organic material, light emitted from the side of the optical functional section 202 can be reflected back to the optical functional section 202 by the limiting dam 201. This allows the quantum dots in the optical functional section 202 to convert the blue or ultraviolet light in the reflected light into light of the corresponding color, thereby further improving the excitation efficiency of the quantum dots. Furthermore, the light reflected back by the limiting dam 201 can be emitted from the side of the optical functional section 202 toward the first substrate 100, thus effectively improving the light extraction efficiency of the chip structure 000.

[0134] Optional, such as Figure 11 and Figure 12 As shown, the multiple filter blocks 501 within the filter unit 500 in the chip structure 000 may include: a first filter block 501a, a second filter block 501b, and a third filter block 501c. Here, the first filter block 501a may be correspondingly configured with the first optical functional unit 202a, the second filter block 501b may be correspondingly configured with the second optical functional unit 202b, and the third filter block 501c may be correspondingly configured with the third optical functional unit 202c. Therefore, the red sub-pixel R in the chip structure 000 may further include: the first filter block 501a; the green sub-pixel G in the chip structure 000 may further include: the second filter block 501b; and the blue sub-pixel B in the chip structure 000 may further include: the third filter block 501c.

[0135] For example, the first light emitted by the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 in the light-emitting unit 300 is all blue light. The first filter block 501a can be a red color resist block, which can transmit red light and absorb light of other colors. In this way, the light emitted from the first optical functional unit 202a can pass through the first filter block 501a before being emitted, and the first filter block 501a can filter out light of other colors except red light, so as to ensure that the red sub-pixel R in the chip structure 000 can filter out the blue light component. It should be noted that, in other possible implementations, the first filter block 501a can also be a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first optical functional unit 202a hits the first filter block 501a, the red light in these rays can pass through the first filter block 501a and then be emitted again, while the blue light in these rays can be reflected back to the first optical functional unit 202a by the first filter block 501a, so that the red quantum dots in the first optical functional unit 202a can excite this blue light into red light, thereby further improving the excitation efficiency of the red quantum dots.

[0136] For example, the first light emitted by the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 in the light-emitting unit 300 is all blue light. The second filter block 501b can be a green color resist block, which can transmit green light and absorb light of other colors. In this way, the light emitted from the second optical functional unit 202b can pass through the second filter block 501b before being emitted, and the second filter block 501b can filter out light of other colors except green light, so as to ensure that the green sub-pixel G in the chip structure 000 can filter out the blue light component. It should be noted that, in other possible implementations, the second filter block 501b can also be a film layer for transmitting green light and reflecting blue light. In this way, after the light emitted from the second optical functional unit 202b hits the second filter block 501b, the green light in these rays can pass through the second filter block 501b and then be emitted again, while the blue light in these rays can be reflected back to the second optical functional unit 202b by the second filter block 501b. This allows the green quantum dots in the second optical functional unit 202b to be excited into green light again, thereby further improving the excitation efficiency of the green quantum dots.

[0137] It should be noted that the film structure of the first filter block 501a and the second filter block 501b can be the same and can be prepared by the same process; for example, both the first filter block 501a and the second filter block 501b are films that transmit red and green light and reflect blue light.

[0138] For example, the first light emitted by the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 in the light-emitting unit 300 is all blue light. The third filter block 501c can be a blue color resist block, which can transmit blue light and absorb light of other colors. In this way, the light emitted from the third optical functional unit 202c can pass through the third filter block 501c before being emitted, and the third filter block 501c can filter out light of other colors except blue light, so as to ensure that the blue sub-pixel B in the chip structure 000 can emit relatively pure blue light.

[0139] For example, the first light emitted by the first sub-light-emitting functional layer 300a1, the second sub-light-emitting functional layer 300a2, and the third sub-light-emitting functional layer 300a3 in the light-emitting unit 300 is blue light, and the third filter block 501c can be a transparent block that can transmit blue light.

[0140] Optional, such as Figure 13 and Figure 14 As shown, Figure 13 This is a schematic diagram of the film layer structure of another chip structure provided in another embodiment of this application. Figure 14 yes Figure 13The diagram shows the film structure at point D-D' of the chip structure. The light-emitting unit 300 in the chip structure 000 may further include a first semiconductor layer 301 located on the light-emitting side of the plurality of sub-light-emitting functional layers 300a. For a clearer view of the structure of the first semiconductor layer 301, please refer to... Figure 15 , Figure 15 This is a top view of a first semiconductor layer provided in an embodiment of this application. The first semiconductor layer 301 may include: a plurality of connection portions 3011 corresponding one-to-one with a plurality of sub-light-emitting functional layers 300a, and an auxiliary portion 3012 connected to the plurality of connection portions 3011.

[0141] Each connection portion 3011 in the first semiconductor layer 301 can be connected to the corresponding sub-light-emitting functional layer 300a, and the outer boundary of the orthographic projection of each connection portion 3011 on the first substrate 100 can completely coincide with the outer boundary of the orthographic projection of the corresponding sub-light-emitting functional layer 300a on the first substrate 100.

[0142] In this application, the plurality of connection portions 3011 and auxiliary portions 3012 in the first semiconductor layer 301 are integrally formed, and the material of the connection portions 3011 in the first semiconductor layer 301 can be the same as the material of the auxiliary portions 3012. It is understood that the plurality of connection portions 3011 and auxiliary portions 3012 in the first semiconductor layer 301 are arranged in a direction parallel to the extension surface of the first substrate 100, and the first semiconductor layer 301 is a planar structure formed as a single layer. The portion of the first semiconductor layer 301 other than the plurality of connection portions 3011 is entirely composed of auxiliary portions 3012. The plurality of connection portions 3011 can be connected through the auxiliary portions 3012 in the first semiconductor layer 301.

[0143] In this embodiment, the light emitted from the sub-light-emitting functional layer 300a in the light-emitting unit 300 first passes through the first semiconductor layer 301 before being emitted from the color conversion unit 200 and the first substrate 100. However, since the first semiconductor layer 301 is a planar structure formed by a single layer, some of the light rays incident on the interior of the first semiconductor layer 301 are prone to generating optical waveguide phenomena within the first semiconductor layer 301. For example, please refer to... Figure 16 , Figure 16 This is an illustration of an effect of generating an optical waveguide phenomenon inside the first semiconductor layer according to an embodiment of this application. Part of the light entering the first semiconductor layer 301 can undergo multiple total internal reflections between two opposing planes within the first semiconductor layer 301 and be transmitted laterally, ultimately exiting from the edge of the first semiconductor layer 301. However, after the optical waveguide phenomenon is generated inside the first semiconductor layer 301, the light exiting from the edge of the first semiconductor layer 301 may not be absorbed by the light-shielding layer in the color conversion unit 200, leading to a high likelihood of light leakage in the chip structure 000.

[0144] Therefore, such as Figure 14 As shown, the chip structure 000 in this application may further include a dam 600 surrounding the light-emitting unit 300. The dam 600 may be disposed on the side of the first encapsulation layer 203 in the color conversion unit 200 that faces away from the first substrate 100. The maximum distance H1 between the side of the dam 600 facing away from the color conversion unit 200 and the first substrate 100 is greater than or equal to the maximum distance H2 between the side of the first semiconductor layer 301 facing away from the first substrate 100 and the first substrate 100.

[0145] Here, the dam 600 in the chip structure 000 is used to absorb the light emitted by the sub-light-emitting functional layer 300a that is laterally propagating within the first semiconductor layer 301. That is, after the light emitted by the sub-light-emitting functional layer 300a enters the interior of the first semiconductor layer 301 and an optical waveguide phenomenon is generated within the first semiconductor layer 301, the light that is laterally propagating within the first semiconductor layer 301 can be absorbed by the dam 600.

[0146] For example, the material of the dam 600 in the chip structure 000 may include at least one of a reflective organic material and a light-absorbing organic material. Here, when the material of the dam 600 includes a light-absorbing organic material, the material of the dam 600 is a black organic material that can absorb light that is laterally transmitted within the first semiconductor layer 301 in the light-emitting unit 300.

[0147] For example, the dam 600 can be a polymer mixed with light-absorbing materials. The polymer can be used as a substrate, and the light-absorbing materials are mixed inside the polymer.

[0148] For example, the dam 600 can be a polymer mixed with light-absorbing materials and scattering particles.

[0149] For example, the light-absorbing material is carbon black; the scattering particles can be at least one of silica particles, titanium dioxide particles, or a polymer with a different refractive index than the dam 600 substrate.

[0150] Furthermore, since the dam 600 is arranged around the light-emitting unit 300, and the maximum distance H1 between the side of the dam 600 facing away from the color conversion unit 200 and the first substrate 100 is greater than or equal to the maximum distance H2 between the side of the first semiconductor layer 301 facing away from the first substrate 100 and the first substrate 100, after an optical waveguide phenomenon is generated inside the first semiconductor layer 301, the light rays that are laterally transmitted within the first semiconductor layer 301 and emitted from any position on the edge can be blocked by the dam 600.

[0151] In this case, even if the light entering the first semiconductor 301 causes an optical waveguide phenomenon, the light emitted from the edge of the first semiconductor 301 can be blocked by setting a dam 600, thereby effectively reducing the probability of light leakage in the chip structure 000.

[0152] In this application, as Figure 14 As shown, the light-emitting unit 300 and the color conversion unit 200 in chip structure 000 can be bonded together via a connecting layer 700. That is, a connecting layer 700 for bonding the two units is distributed between the light-emitting unit 300 and the color conversion unit 200. For a clearer view of the structure of the light-emitting unit 300 in chip structure 000, please refer to [reference needed]. Figure 17 and Figure 18 , Figure 17 This is a top view of a light-emitting unit located on the connection layer according to an embodiment of this application. Figure 18 yes Figure 17 The diagram shows the film structure of the light-emitting unit at E-E'. The light-emitting unit 300 may further include: a first connecting electrode 302 and a plurality of second connecting electrodes 303.

[0153] The first connecting electrode 302 in the light-emitting unit 300 can be electrically connected to the first semiconductor layer 301; the multiple second connecting electrodes 303 in the light-emitting unit 300 can correspond one-to-one with multiple sub-light-emitting functional layers 300a, and each second connecting electrode 303 can be distributed on the side of the corresponding sub-light-emitting functional layer 300a away from the first semiconductor 301, and can be electrically connected to the corresponding sub-light-emitting functional layer 300a.

[0154] In this application, each sub-light-emitting functional layer 300a in the light-emitting unit 300 may include a current spreading layer 304, a second semiconductor layer 305, and a light-emitting layer 306 stacked along a direction perpendicular to and toward the first substrate 100. That is, the light-emitting layer 306 in the sub-light-emitting functional layer 300a is closer to the first semiconductor layer 301 than the current spreading layer 304.

[0155] In each sub-light-emitting functional layer 300a, the light-emitting layer 306 can be connected to the first semiconductor layer 301. Here, since the first semiconductor layer 301 in the light-emitting unit 300 is located on the light-emitting side of each sub-light-emitting functional layer 300a, and the first semiconductor layer 301 is closer to the first substrate 100 than each sub-light-emitting functional layer 300a, the first semiconductor layer 301 can contact the side of the light-emitting layer 306 in each sub-light-emitting functional layer 300a that is away from the second semiconductor layer 305.

[0156] In this application, one side of the current spreading layer 304 in each sub-light-emitting functional layer 300a can contact the second semiconductor layer 305, and the other side can overlap with the second connection electrode 303. That is, the side of the current spreading layer 304 in each sub-light-emitting functional layer 300a facing away from the second semiconductor layer 305 can overlap with the corresponding second connection electrode 303. Therefore, by overlapping the current spreading layer 304 in the sub-light-emitting functional layer 300a with the second pad electrode 303, an electrical connection between the second pad electrode 303 and the sub-light-emitting functional layer 300a can be achieved. Optionally, the material of the current spreading layer 304 is ITO (indium tin oxide). Setting the current spreading layer 304 in the sub-light-emitting functional layer 300a is beneficial for hole transport and improves the electrical performance of the chip structure 000.

[0157] In this embodiment, the light-emitting unit 300 may further include a common electrode layer 307 connected to the auxiliary portion 3012 in the first semiconductor layer 301. The side of the common electrode layer 307 facing away from the first semiconductor layer 301 may overlap with the first connecting electrode 302. Therefore, one side of the common electrode layer 307 may be connected to the first semiconductor layer 301, and the other side may be connected to the first connecting electrode 302, thereby achieving an electrical connection between the first connecting electrode 302 and the first semiconductor layer 302. Optionally, the common electrode layer 307 may also have a current amplification function.

[0158] Please refer to the following in this application: Figure 19 , Figure 20 and Figure 21 , Figure 19 This is a top view of another first semiconductor layer provided in an embodiment of this application. Figure 20 This is a top view of another light-emitting unit provided in an embodiment of this application. Figure 21 yes Figure 20 The diagram shows the film structure of the light-emitting unit at F-F'. It should be noted that, for ease of viewing, the insulating protective layer 308, the first connecting electrode 302, and the second connecting electrode 304 in the light-emitting unit are not shown here. Multiple connecting portions 3011 in the first semiconductor layer 301 can correspond one-to-one with multiple second connecting electrodes 303. The orthographic projection of each connecting portion 3011 on the first substrate 100 can overlap with the orthographic projection of the corresponding second connecting electrode 303 on the first substrate 100. For example, the outer boundary of the orthographic projection of each connecting portion 3011 on the first substrate 100 coincides with the outer boundary of the orthographic projection of the corresponding second connecting electrode 303 on the first substrate 100.

[0159] The auxiliary portion 3012 in the first semiconductor layer 301 may include: a first auxiliary portion 3012a, a second auxiliary portion 3012b, and a third auxiliary portion 3013c.

[0160] The orthographic projection of the first auxiliary part 3012a on the first substrate 100 may overlap with the orthographic projection of the first connecting electrode 302 on the first substrate 100. For example, the outer boundary of the orthographic projection of the first auxiliary part 3012a on the first substrate 100 coincides with the outer boundary of the orthographic projection of the first connecting electrode 302 on the first substrate 100.

[0161] A portion of the second auxiliary part 3012b may be located between adjacent connecting parts 3011, and another portion may be located between the first auxiliary part 3012a and the connecting part 3011.

[0162] The third auxiliary part 3012c may be arranged around the first auxiliary part 3012a, the second auxiliary part 3012b and a plurality of connecting parts 3011.

[0163] Therefore, the first auxiliary portion 3012a, the second auxiliary portion 3012b, the third auxiliary portion 3013c and the multiple connecting portions 3011 in the first semiconductor layer 301 can form a planar structure that is set in one whole layer.

[0164] Optionally, in the light-emitting unit 300, the material of the second semiconductor layer 305 in each sub-light-emitting functional layer 300a may include: p-type doped gallium nitride; the light-emitting layer 306 in each sub-light-emitting functional layer 300a may be a multi-quantum-well layer. For example... Figure 19 and Figure 21 As shown, the first semiconductor layer 301 may include a first sublayer 301a and a second sublayer 301b stacked along a direction perpendicular to and toward the first substrate 100. That is, the second sublayer 301b is closer to the interconnect layer 700 than the first sublayer 301a. It can be understood that the first semiconductor layer 301 can be divided into an auxiliary portion 3012 and a plurality of interconnect portions 3011 in a direction parallel to the extension surface of the first substrate 100, and the first semiconductor layer 301 can be divided into a first sublayer 301a and a second sublayer 301b in a direction perpendicular to the extension surface of the first substrate 100.

[0165] Specifically, the first sub-layer 301a in the first semiconductor layer 301 can be located between the second sub-layer 301b and the light-emitting layer 306 in each sub-light-emitting functional layer 300a. That is, the first sub-layer 301a is closer to the light-emitting layer 306 in each sub-light-emitting functional layer 300a than the second sub-layer 301b. Here, the material of the first sub-layer 301a in the first semiconductor layer 301 can be N-type doped gallium nitride, and the second sub-layer 301b in the first semiconductor layer 301 can be a gallium nitride buffer layer.

[0166] In this case, in the light-emitting unit 300, after the first connecting electrode 302 is loaded with a cathode signal, if the second connecting electrode 303 in a certain sub-light-emitting functional layer 300a is loaded with an anode signal, then the light-emitting layer 304 in this sub-light-emitting functional layer 300a can emit the first light.

[0167] In this embodiment, the light-emitting unit 300 may further include an insulating protective layer 308 located on the side of the common electrode layer 307 and each sub-light-emitting functional layer 300a facing away from the first semiconductor layer 301. Here, the orthogonal projections of the plurality of sub-light-emitting functional layers 300a and the common electrode layer 307 onto the first semiconductor layer 301 are all located within the orthogonal projection of the insulating protective layer 308 onto the first semiconductor layer 301, and the first connecting electrode 302 and the plurality of second connecting electrodes 303 are all located on the side of the insulating protective layer 308 facing away from the first semiconductor layer 301.

[0168] In this application, the insulating protective layer 308 may have: a first connection hole V1 corresponding to the first connection electrode 302, and a plurality of second connection holes V2 corresponding to a plurality of second connection electrodes 303. The first connection electrode 302 can overlap with the side of the common electrode layer 307 opposite to the first semiconductor layer 301 through the first connection hole V1. The plurality of second connection holes V2 may also correspond one-to-one with a plurality of sub-light-emitting functional layers 300a, and each second connection electrode 303 can overlap with the side of the current spreading layer 304 in the corresponding sub-light-emitting functional layer 300a opposite to the light-emitting layer 306 through the corresponding second connection hole V2.

[0169] In this application, the thickness of the common electrode layer 307 can be much greater than the thickness of the current spreading layer 304. For example, the side of the common electrode layer 307 facing away from the first semiconductor layer 301 can be flush with the side of the current spreading layer 304 facing away from the first semiconductor layer 301. That is, the thickness of the common electrode layer 307 can be equal to the sum of the thicknesses of the current spreading layer 304, the second semiconductor layer 305, and the light-emitting layer 306 in the sub-light-emitting functional layer 300a. Thus, the sides of the second connecting electrode 303 and the first connecting electrode 302 in the light-emitting unit 300 facing away from the connecting layer 700 are also flush. Since the second connecting electrode 303 and the first connecting electrode 302 in the chip structure 000 need to be soldered to the driving backplane when the chip structure 000 is subsequently connected to the driving backplane, the chip structure 000 can be stably fixed on the driving backplane when the sides of the second connecting electrode 303 and the first connecting electrode 302 facing away from the connecting layer 700 are flush.

[0170] In this embodiment, the common electrode layer 307 may include: a common electrode body portion 3071, a first support portion 3072 fixedly connected to the common electrode body portion 3071, and two second support portions 3073 fixedly connected to the first support portion 3072. The common electrode body portion 3071 may be electrically connected to the first connecting electrode 302. The first support portions 3072 may be distributed around the common electrode body portion 3071, and each second support portion 3073 may be distributed on the side of the first support portion 3072 opposite to the common electrode body portion 3071. Furthermore, of the two second support portions 3073, one second support portion 3073 may be located between two adjacent sub-light-emitting functional layers 300a distributed in the row direction, and the other second support portion 3073 may be located between two adjacent sub-light-emitting functional layers 300a distributed in the column direction. This ensures both high intensity of the entire light-emitting unit 300 and a large volume of the common electrode layer 307, thereby reducing the resistance in the light-emitting unit 300 used for transmitting common cathode signals.

[0171] Optionally, in the light-emitting unit 300, the first connecting electrode 302 can be disposed in the same layer as each of the second connecting electrodes 303 and made of the same material. That is, the first connecting electrode 302 and each of the second connecting electrodes 303 are formed using the same patterning process.

[0172] In this embodiment, the chip structure 000 may further include a connection layer 700. Here, the light-emitting unit 300 in the chip structure 000 may be located on the side of the connection layer 700 away from the first substrate 100, and the light-emitting unit 300 may be fixed to the side of the color conversion unit 200 away from the first substrate 100 via the connection layer 700. For example, the first semiconductor layer 301 in the light-emitting unit 300 may be fixed to the side of the first encapsulation layer 204 in the color conversion unit 200 away from the first substrate 100 via the connection layer 700.

[0173] It should be noted that the color conversion unit 200 and the light emission unit 300 in the chip structure 000 of this application are manufactured independently, and then the two are fixed together by the connection layer 700 to obtain the chip structure 000.

[0174] In some examples, firstly, multiple color conversion units 200, multiple dimming units 400, multiple filter units 500, and multiple dams 600 can be formed on a second substrate that is integrally formed and has a large area. The multiple color conversion units 200 are arranged in a one-to-one correspondence with the multiple filter units 500 and the multiple dimming units 400, and the corresponding color conversion units 200, filter units 500, and dimming units 400 can be stacked and distributed according to the film layer sequence shown in the above embodiments. The multiple color conversion units 200 also correspond one-to-one with the multiple dams 600, and each dam 600 can be distributed on the side of the corresponding color conversion unit 500 facing away from the first substrate 100.

[0175] Subsequently, multiple light-emitting units 300 can be formed on a third substrate (usually a sapphire substrate or a silicon substrate), and a temporary substrate can be formed on the side of the multiple third light-emitting units away from the third substrate.

[0176] Then, the third substrate is removed, and the light-emitting unit 300 is fixed on the side of the temporary substrate away from the corresponding color conversion unit 200 away from the second substrate using the connecting layer 700.

[0177] Finally, after removing the temporary substrate and thinning the second substrate, the thinned second substrate is cut using a cutting process to obtain multiple chip structures.

[0178] Optionally, the connection layer 700 in the chip structure 000 can be an adhesive layer. This adhesive layer is a single-layer structure, and it can bond the color conversion unit 200 and the light-emitting unit 300 together. For example, the adhesive layer is made of an epoxy resin-based organic adhesive. This adhesive layer is transparent; therefore, even if the adhesive layer covers each sub-light-emitting functional layer 300a in the light-emitting unit 300, it can ensure that each sub-light-emitting functional layer 300a can transmit light through the adhesive layer and reach the color conversion unit 200.

[0179] In this case, since the adhesive layer is viscous before curing, after applying the adhesive to the light-emitting unit 300 and attaching the adhesive-coated light-emitting unit 300 to the corresponding color conversion unit 200, it is usually necessary to apply a certain amount of pressure to the light-emitting unit 300. During the process of applying pressure to the light-emitting unit 300, some of the adhesive will overflow between the light-emitting unit 300 and the surrounding dam 600 under this pressure. Therefore, after the adhesive layer cures, adhesive is also distributed between the light-emitting unit 300 and the surrounding dam 600. For this reason, the connecting layer 700 may include a first filling portion 701 and a second filling portion 702. The first filling portion 701 may be located between the light-emitting unit 300 and the color conversion unit 200, and the light-emitting unit 300 can be firmly bonded to the side of the color conversion unit 200 away from the first substrate 100 through the first filling portion 701. The second filling portion 702 may be located between the surrounding dam 600 and the light-emitting unit 300.

[0180] Optionally, the light-emitting unit 300 in the chip structure 000 may contain multiple light-emitting chips, and each light-emitting chip may have a sub-light-emitting functional layer 300a. Here, the light-emitting chip is an LED chip. It should be noted that the LED chip can be a regular-sized LED chip, a mini light-emitting diode (MLED) chip, or a micro LED chip. This application does not limit the specific type of chip.

[0181] In summary, the chip structure provided in this application includes: a first substrate, a light-emitting unit, a color conversion unit, and a dimming unit. The refractive index of the dimming section in the dimming unit can be greater than the refractive index of the functional layer. Thus, when light emitted from the sub-light-emitting functional layer in the light-emitting unit passes through the corresponding optical functional layer, light rays exiting the optical functional layer can directly pass through the corresponding dimming section before exiting, while light rays with large viewing angles can be adjusted through the cooperation of the dimming section with a higher refractive index and the functional layer with a lower refractive index. This results in a smaller angle between these large-viewing-angle rays and the normal to the first substrate. This improves the light extraction efficiency of the chip structure at small viewing angles, ensuring higher brightness when viewed directly, and resulting in better display performance on the subsequent display substrate integrating this chip structure.

[0182] This application also provides a display substrate, which can be a display substrate in a mobile phone, laptop computer, television, electronic watch, or flat-panel computer, or a display substrate for an advertising screen. The display substrate may include a driving backplane and multiple chip structures located on one side of the driving backplane. Here, each chip structure in the display substrate can be the chip structure described in the above embodiments. Furthermore, each second connection electrode and first connection electrode in the chip structure can be fixed to the driving backplane by soldering for electrical connection with the driving backplane. It should be noted that the driving backplane can provide corresponding driving signals to each chip structure, causing the light-emitting units in the chip structure to emit light, thereby allowing the display substrate to display the corresponding image.

[0183] This application also provides a display module, which may include a housing, a driving component, and a display substrate. The display module can be used in mobile phones, laptops, televisions, electronic watches, or flat-panel computers, or it can be used in advertising screens. Here, the display substrate included in the display module can be the display substrate described in the above embodiments.

[0184] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0185] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0186] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A chip structure, characterized in that, include: First substrate, light-emitting unit, color conversion unit, and dimming unit; The dimming unit is located between the first substrate and the color conversion unit, and the light-emitting unit is located on the side of the color conversion unit away from the first substrate, with the light-emitting side of the light-emitting unit facing the first substrate. The color conversion unit includes a limiting dam and an optical functional unit. The limiting dam has an opening area, and the optical functional unit is located within the opening area. The optical functional unit is used to convert the color of light entering the optical functional unit. The dimming unit includes a functional layer and a dimming section. The functional layer has a dimming slot, at least a portion of the dimming section is located within the dimming slot, and the refractive index of the dimming section is greater than the refractive index of the functional layer. The orthographic projection of the dimming groove on the first substrate overlaps with the orthographic projection of the opening area on the first substrate.

2. The chip structure according to claim 1, characterized in that, The functional layer has: a first surface facing the first substrate and a second surface disposed opposite to the first surface, the dimming slot being a through slot extending from the first surface to the second surface, and the angle between the sidewall of the through slot and the second surface being an acute angle.

3. The chip structure according to claim 2, characterized in that, The dimming unit further includes a flat cover layer located on the side of the functional layer opposite to the first substrate, the flat cover layer covering the functional layer and the dimming unit, and the refractive index of the flat cover layer being greater than the refractive index of the functional layer.

4. The chip structure according to claim 3, characterized in that, The flat cover layer and the dimming unit are integrally formed; a portion of the flat cover layer is in contact with the side of the functional layer opposite to the first substrate, and another portion of the flat cover layer is connected to the side of the dimming unit opposite to the first substrate.

5. The chip structure according to claim 3, characterized in that, The distance between the first surface and the second surface is in the range of 4 micrometers to 6 micrometers; the angle between the sidewall of the through groove and the second surface is in the range of 30° to 90°.

6. The chip structure according to claim 1, characterized in that, The dimming slot is a blind slot that does not penetrate the functional layer, and the blind slot is distributed on the side of the functional layer facing the first substrate, with all dimming parts distributed within the blind slot.

7. The chip structure according to claim 6, characterized in that, The dimming unit has: a third surface facing the first substrate, a fourth plane disposed opposite to the first plane, and a first outer contour surface located between the third surface and the fourth panel, wherein the angle between the first outer contour surface and the third surface is an acute angle, and the angle between the first contour surface and the fourth surface is an obtuse angle.

8. The chip structure according to claim 7, characterized in that, The distance between the third surface and the fourth surface is in the range of 4 micrometers to 6 micrometers; the angle between the first profile surface and the fourth surface is in the range of 90° to 150°.

9. The chip structure according to any one of claims 2 to 8, characterized in that, The difference between the refractive index of the dimming section and the refractive index of the functional layer is greater than or equal to 0.

3.

10. The chip structure according to claim 6, characterized in that, The dimming unit has a third surface facing the first substrate and an arc surface opposite to the third surface, the arc surface being an arc surface protruding toward the color conversion unit.

11. The chip structure according to claim 10, characterized in that, The dimming unit further includes a hydrophobic layer located between the first substrate and the dimming part, wherein the refractive index of the hydrophobic layer is lower than that of the dimming part.

12. The chip structure according to claim 10, characterized in that, The dimming unit includes a plurality of dimming sections; the color conversion unit includes a plurality of optical functional sections, each of which corresponds to one of the dimming sections; the orthographic projection of one dimming section on the first substrate covers the orthographic projection of the corresponding optical functional section on the first substrate; In this unit, any two different dimming sections have different refractive indices.

13. The chip structure according to claim 12, characterized in that, The plurality of optical functional units include: a first optical functional unit for emitting red light, a second optical functional unit for emitting green light, and a third optical functional unit for emitting blue light; The refractive index of the dimming unit corresponding to the second optical functional unit is greater than the refractive index of the dimming unit corresponding to the first optical functional unit, and less than the refractive index of the dimming unit corresponding to the third optical functional unit.

14. The chip structure according to any one of claims 10 to 13, characterized in that, The color conversion unit is located on the side of the functional layer opposite to the first substrate.

15. The chip structure according to any one of claims 1-8 and 10-13, characterized in that, The chip structure further includes a filter unit, which is located between the first substrate and the color conversion unit, and the filter unit has a filter block, the orthographic projection of the filter block on the first substrate overlapping the orthographic projection of the optical functional unit on the first substrate.

16. The chip structure according to claim 15, characterized in that, The filter unit is located between the dimming unit and the color conversion unit, or the filter unit is located between the first substrate and the filter unit.

17. A display substrate, characterized in that, include: A driving backplane, and a plurality of chip structures arranged in an array on one side of the driving backplane, wherein the chip structures are the chip structures described in any one of claims 1 to 16.

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