Preparation method of perovskite photoresist nano composite material and laser direct writing method

Abstract

The invention discloses a preparation method of a perovskite photoresist nano composite material and a laser direct writing method. The preparation method comprises the following steps: forming a two-photon photoresist substrate; a CsPbBr precursor solution is formed; and fusing the CsPbBr precursor solution and the two-photon photoresist substrate to form the two-photon photoresist nano composite material doped with the CsPbBr precursor. The perovskite photoresist nano composite material formed by the method can reach hundred-nanometer-level processing precision, and the minimum line width can reach 100 nm. Meanwhile, the preparation method disclosed by the invention is simple and low in cost, and a display device prepared from the perovskite photoresist nano composite material disclosed by the invention has excellent performance and can be applied to the fields of information storage, holographic display and the like.

Description

Technical Field

[0001] This invention relates to the technical field of optical materials, and in particular to a method for preparing perovskite photoresist nanocomposite materials and a laser direct writing method. Background Technology

[0003] Perovskite quantum dots (PQDs), as an excellent new type of optoelectronic nanomaterial, possess superior properties such as tunable bandgap, large light absorption coefficient, low trapped state, long carrier lifetime, high photoluminescence efficiency, and low cost, thus showing broad application prospects in fields such as displays, lighting, photoelectric detection, anti-counterfeiting, and lasers. Currently, laser direct writing technology is commonly used to pattern perovskite materials during the processing of perovskite quantum dots.

[0004] However, the processing resolution achievable by laser direct writing technology for perovskite quantum dot materials has always been limited by the diffraction limit of classical optics, making it difficult to achieve processing precision at the hundred-nanometer level. For example, researchers have reported a femtosecond laser direct writing (FsLDW) technique, which is a highly efficient, contactless, maskless, and depth-resolution micro-imaging technique, but even this technique has limitations, with its resolution typically at the micrometer level. Therefore, to meet the application requirements such as chip integration and ultra-high-resolution displays, it is particularly important to develop a perovskite material and corresponding technology capable of laser direct writing at the hundred-nanometer level. Summary of the Invention

[0006] This invention provides a method for preparing perovskite photoresist nanocomposite materials and a laser direct writing method, solving the problem that current perovskite quantum dot materials cannot achieve laser direct writing with a precision of hundreds of nanometers.

[0007] To solve the above-mentioned technical problems, the present invention is implemented as follows: In a first aspect, a method for preparing perovskite photoresist nanocomposite materials is provided, comprising the following steps: forming a two-photon photoresist substrate; forming a CsPbBr3 precursor solution; fusing the CsPbBr3 precursor solution with the two-photon photoresist substrate to form a two-photon photoresist nanocomposite material doped with CsPbBr3 precursor.

[0008] In one embodiment, the two-photon photoresist substrate includes a photoresist monomer and a photoinitiator, wherein the weight ratio of the photoresist monomer to the photoinitiator is 1:1.

[0009] In one embodiment, the photoresist monomer is triacrylate.

[0010] In one embodiment, the photoinitiator is E,E-1,4-bis[4-(di-n-butylamino)phenyl]-2,5-dimethoxybenzene.

[0011] In one embodiment, CsBr and PbBr2 are used as raw materials and DMSO is used as solvent to react and form a CsPbBr3 precursor solution.

[0012] In one embodiment, the step of forming the CsPbBr3 precursor solution includes: dispersing CsBr in a portion of DMSO to obtain a CsBr dispersion; dispersing PbBr2 in another portion of DMSO to obtain a PbBr2 dispersion; mixing the CsBr dispersion and the PbBr2 dispersion and stirring until homogeneous to obtain the CsPbBr3 precursor solution.

[0013] In one embodiment, the step of fusing the CsPbBr3 precursor solution with the two-photon photoresist substrate includes: mixing the CsPbBr3 precursor solution and the two-photon photoresist substrate and stirring; ultrasonically vibrating the composite material of the CsPbBr3 precursor solution and the two-photon photoresist substrate to obtain a two-photon photoresist nanocomposite material doped with CsPbBr3 precursor.

[0014] In a second aspect, a laser direct writing method is provided, comprising the following steps: taking a two-photon photoresist nanocomposite material doped with CsPbBr3 precursor prepared by the method of preparing perovskite photoresist nanocomposite material in the first aspect, and preparing it into a perovskite photoresist sample; placing the perovskite photoresist sample on the support plane of a laser device; activating the laser device, the laser device emitting a femtosecond pulsed laser beam toward the sample, and moving the perovskite photoresist sample through the support plane to perform laser processing on the perovskite photoresist sample.

[0015] In one embodiment, the femtosecond pulsed laser beam has a wavelength of 517 nm, a repetition rate of 2 MHz, and a pulse width of 350 fs.

[0016] In one embodiment, the fluorescence intensity of the perovskite photoresist sample exhibits a non-linear increasing trend with the intensity of the laser power.

[0017] In this embodiment of the invention, a two-photon photoresist substrate and a CsPbBr3 precursor solution are first prepared separately. Then, the CsPbBr3 precursor solution is fused with the two-photon photoresist substrate. This embeds the CsPbBr3 precursor into the two-photon photoresist substrate. The perovskite photoresist nanocomposite material formed in this way can achieve a processing precision at the hundred-nanometer level, with a minimum linewidth of 100 nm. Furthermore, the preparation method of this invention is simple and low-cost. Display devices fabricated using the perovskite photoresist nanocomposite material of this invention exhibit excellent performance and can be used in fields such as information storage and holographic displays. Attached Figure Description

[0019] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings: Figure 1 This is a schematic flowchart of the preparation method of the perovskite photoresist nanocomposite material of the present invention; Figure 2 This is a schematic flowchart of the laser direct writing method of the present invention; Figure 3 This is a schematic diagram of the femtosecond laser processing of the perovskite photoresist sample of the present invention; Figure 4 This is a graph showing the relationship between the structural linewidth of the present invention and laser power, along with the corresponding SEM image. Figure 5 This is a fluorescence characterization image of the perovskite photoresist sample of the present invention. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] Please see Figure 1This is a schematic flowchart of the preparation method of the perovskite photoresist nanocomposite material of the present invention; as shown in the figure, the preparation method of the perovskite photoresist nanocomposite material of this embodiment is used to achieve the fabrication of perovskite quantum dot structures with a resolution of hundreds of nanometers. The preparation method of the perovskite photoresist nanocomposite material includes the following steps S1 to S3. In step S1, a two-photon photoresist substrate is formed. In this embodiment, the two-photon photoresist substrate includes a photoresist monomer and a photoinitiator, and the weight ratio of the photoresist monomer to the photoinitiator is 1:1, that is, the photoresist monomer and the photoinitiator are each 50 wt%. The photoresist monomer is triacrylate, and the triacrylate can be selected from tri-2-acrylate [2,4,6-trioxo-1,3,5-triazine-1,3,5(2H,4H,6H)-trimethyl]tri-2,1-ethylene ester (abbreviated as SR368) or SR9008. The photoinitiator is E,E-1,4-bis[4-(di-n-butylamino)phenyl]-2,5-dimethoxybenzene.

[0023] In step S2, a CsPbBr3 precursor solution is formed. In this embodiment, CsBr and PbBr2 are used as raw materials, and DMSO is used as a solvent to react and form a CsPbBr3 precursor solution. First, CsBr is dispersed in a portion of DMSO to obtain a CsBr dispersion; then, PbBr2 is dispersed in another portion of DMSO to obtain a PbBr2 dispersion; finally, the CsBr dispersion and the PbBr2 dispersion are mixed and stirred evenly to obtain the CsPbBr3 precursor solution.

[0024] In step S3, a CsPbBr3 precursor solution and a two-photon photoresist substrate are fused to form a CsPbBr3 precursor-doped two-photon photoresist nanocomposite material. In this embodiment, the CsPbBr3 precursor solution and the two-photon photoresist substrate are mixed in a certain proportion and stirred; then, the composite material of the CsPbBr3 precursor solution and the two-photon photoresist substrate is ultrasonically vibrated to obtain a CsPbBr3 precursor-doped two-photon photoresist nanocomposite material.

[0025] The method for preparing the perovskite photoresist nanocomposite material in this embodiment first prepares a two-photon photoresist substrate and a CsPbBr3 precursor solution separately, and then fuses the CsPbBr3 precursor solution with the two-photon photoresist substrate. This achieves the embedding of the CsPbBr3 precursor into the two-photon photoresist substrate. Since the two-photon photoresist substrate is a chemical substance that plays a core role in the field of micro-nano fabrication, it triggers the polymerization or cross-linking reaction of the photoresist material through the two-photon absorption effect. Two-photon absorption refers to the phenomenon where a molecule simultaneously absorbs two low-energy photons and transitions to a high-energy state. The two-photon process has nonlinear characteristics and only occurs in the laser focal region, thereby achieving a spatial resolution of hundreds of nanometers. In other words, the perovskite photoresist nanocomposite material prepared in this embodiment can achieve a processing precision of hundreds of nanometers, and the minimum linewidth can reach 100 nm. Meanwhile, the preparation method of this embodiment is simple and low in cost, and the display device prepared using the perovskite photoresist nanocomposite material of this embodiment has excellent performance and can be used in fields such as information storage and holographic display.

[0026] Please see Figures 2 to 4 This is a schematic diagram of the steps of the laser direct writing method of the present invention. Figure 3 This is a schematic diagram of femtosecond laser processing of a perovskite photoresist sample. Figure 4 The figure shows the relationship between the structural linewidth and laser power, along with the corresponding SEM image. As shown, the laser direct writing method of this embodiment includes steps S01 to S03. In step S01, the two-photon photoresist nanocomposite material with CsPbBr3 precursor prepared above is taken and prepared into a perovskite photoresist sample. In step S02, the perovskite photoresist sample is placed on the support plane of the laser device. In step S03, the laser device is activated, emitting a femtosecond pulsed laser beam towards the sample. The wavelength of the femtosecond pulsed laser beam is 517 nm, the repetition frequency is 2 MHz, and the pulse width is 350 fs. The perovskite photoresist sample is moved through the support plane to perform laser processing on the perovskite photoresist sample. This embodiment achieves nanoscale processing of materials by adjusting processing parameters such as laser power and scanning speed.

[0027] Please refer to the following: Figure 5 The figure shows the fluorescence characterization of the perovskite photoresist sample of the present invention. As shown, in this embodiment, the fluorescence intensity of the perovskite photoresist sample exhibits a non-linear increasing trend with the laser power. In other words, this embodiment can control the fluorescence intensity of the perovskite photoresist nanocomposite material by changing the laser power. Within a certain laser power range, as the laser power increases, the perovskite precursor gradually crystallizes into luminescent quantum dots, and its fluorescence intensity exhibits a non-linear increasing trend.

[0028] In summary, this invention provides a method for preparing perovskite photoresist nanocomposites and a laser direct-writing method. This invention first prepares a two-photon photoresist substrate and a CsPbBr3 precursor solution separately, then fuses the CsPbBr3 precursor solution with the two-photon photoresist substrate. This embeds the CsPbBr3 precursor into the two-photon photoresist substrate. The perovskite photoresist nanocomposites formed in this way can achieve a processing precision at the hundred-nanometer level, with a minimum linewidth of 100 nm. Furthermore, the preparation method of this invention is simple and low-cost. Display devices prepared using the perovskite photoresist nanocomposites of this invention exhibit excellent performance and can be used in fields such as information storage and holographic displays. In addition, this invention enables effective modulation of the fluorescence intensity of the perovskite photoresist nanocomposites through laser power control, and the laser direct-writing technology has advantages such as non-contact, high precision, and ease of integration.

[0029] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0030] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of the present invention without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of the present invention.

Claims

1. A method for preparing a perovskite photoresist nanocomposite material, characterized in that, Includes the following steps: Forming a two-photon photoresist substrate; Formation of CsPbBr3 precursor solution; The CsPbBr3 precursor solution is fused with the two-photon photoresist substrate to form a two-photon photoresist nanocomposite material doped with CsPbBr3 precursor.

2. The method for preparing perovskite photoresist nanocomposite material according to claim 1, characterized in that, The two-photon photoresist substrate comprises a photoresist monomer and a photoinitiator, wherein the weight ratio of the photoresist monomer to the photoinitiator is 1:

1.

3. The method for preparing perovskite photoresist nanocomposite materials according to claim 2, characterized in that, The photoresist monomer is triacrylate.

4. The method for preparing perovskite photoresist nanocomposite material according to claim 2, characterized in that, The photoinitiator is E,E-1,4-bis[4-(di-n-butylamino)phenyl]-2,5-dimethoxybenzene.

5. The method for preparing perovskite photoresist nanocomposite material according to claim 1, characterized in that, The CsPbBr3 precursor solution was formed by reacting CsBr and PbBr2 as raw materials with DMSO as solvent.

6. The method for preparing perovskite photoresist nanocomposite material according to claim 5, characterized in that, The steps for forming the CsPbBr3 precursor solution include: The CsBr was dispersed in a portion of the DMSO to obtain a CsBr dispersion; The PbBr2 was dispersed in another portion of the DMSO to obtain a PbBr2 dispersion; The CsBr dispersion and the PbBr2 dispersion were mixed and stirred until homogeneous to obtain the CsPbBr3 precursor solution.

7. The method for preparing perovskite photoresist nanocomposite material according to claim 1, characterized in that, The step of fusing the CsPbBr3 precursor solution with the two-photon photoresist substrate includes: The CsPbBr3 precursor solution was mixed with the two-photon photoresist substrate and stirred. The composite material of the CsPbBr3 precursor solution and the two-photon photoresist substrate is obtained by ultrasonically vibrating the CsPbBr3 precursor-doped two-photon photoresist nanocomposite material.

8. A laser direct writing method, characterized in that, Includes the following steps: The two-photon photoresist nanocomposite material doped with CsPbBr3 precursor prepared by the preparation method of perovskite photoresist nanocomposite material as described in claim 1 was used to prepare a perovskite photoresist sample. The perovskite photoresist sample is placed on the support plane of the laser device; The laser device is activated, and it emits a femtosecond pulsed laser beam toward the sample, moving the perovskite photoresist sample through the bearing plane to perform laser processing on the perovskite photoresist sample.

9. The laser direct writing method according to claim 8, characterized in that, The femtosecond pulsed laser beam has a wavelength of 517 nm, a repetition frequency of 2 MHz, and a pulse width of 350 fs.

10. The laser direct writing method according to claim 8, characterized in that, The fluorescence intensity of the perovskite photoresist sample showed a non-linear increasing trend with respect to the laser power.

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