Display device, method of manufacturing display device, and electronic device

Abstract

The invention relates to a display device, a method of manufacturing the display device, and an electronic device. The display device includes: a substrate including a light emitting area and a non-light emitting area; an anode electrode positioned on the light emitting region of the substrate; a light emitting layer positioned on the anode electrode; a cathode electrode positioned on the light emitting layer; a guard electrode positioned on the cathode electrode; a pixel defining layer positioned on the non-emission area of the substrate, an opening being defined in the pixel defining layer; and a common electrode positioned on the pixel defining layer, and the common electrode is in contact with the guard electrode at a portion overlapping the opening. A first inclination angle of a side surface of the light-emitting layer facing the non-light-emitting region with respect to an upper surface of the anode electrode is 60 DEG to 90 DEG.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2024-0062357, filed on May 13, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to display devices, methods of manufacturing display devices, and electronic devices. Background Technology

[0004] With the advancement of the information age, the demand for display devices for displaying images has increased in various forms. For example, display devices are already used in various electronic devices such as smartphones, digital cameras, laptops, navigators, and smart TVs. Display devices can be flat panel displays such as liquid crystal displays, field emission displays, and organic light-emitting diode (OLED) displays. Among flat panel displays, OLED displays include light-emitting elements in each pixel of the display panel that can self-emit light, thereby displaying images even without a backlight unit that provides light to the display panel.

[0005] With the development of various electronic devices, the demand for high-resolution display devices is increasing. In the case of high-resolution display devices, due to the need for high pixel integration, the spacing between light-emitting elements overlapping each light-emitting area may become narrower. Therefore, high-resolution display devices can be formed by patterning processes that form individual pixels instead of mask processes. Summary of the Invention

[0006] This disclosure provides a high-resolution display device and a method for manufacturing the display device, wherein defects such as damage to the light-emitting layer and cathode electrode caused during the manufacturing process of the high-resolution display device are resolved.

[0007] This disclosure is not limited to the aspects mentioned above, and additional aspects of this disclosure not mentioned herein will be clearly understood by those skilled in the art from the following description of this disclosure.

[0008] Details of other embodiments are included in the detailed description and accompanying drawings.

[0009] In embodiments of this disclosure, a display device includes: a substrate including a light-emitting region and a non-light-emitting region; an anode electrode positioned on the light-emitting region of the substrate; a light-emitting layer positioned on the anode electrode; a cathode electrode positioned on the light-emitting layer; a protective electrode positioned on the cathode electrode; a pixel defining layer positioned on the non-light-emitting region of the substrate and defining an opening in the pixel defining layer; and a common electrode positioned on the pixel defining layer, wherein the common electrode contacts the protective electrode at a portion overlapping the opening, wherein a first tilt angle of the side surface of the light-emitting layer facing the non-light-emitting region relative to the upper surface of the anode electrode is 60° to 90°.

[0010] In an embodiment, the cathode electrode may include a side surface facing the non-light-emitting area, and the second tilt angle of the side surface of the cathode electrode relative to the upper surface of the light-emitting layer may be 60° to 90°.

[0011] In one embodiment, the cathode electrode may not cover the side surface of the light-emitting layer.

[0012] In some embodiments, the cathode electrode may include a metal oxide.

[0013] In an embodiment, the cathode electrode may include at least one of ytterbium oxide (Yb2O3) and terbium oxide (Tb2O3).

[0014] In one embodiment, the thickness of the cathode electrode in the direction perpendicular to the main surface of the substrate can be 5 angstroms. or larger and Or smaller.

[0015] In this embodiment, the side surface of the light-emitting layer and the side surface of the cathode electrode can be aligned on the same line.

[0016] In an embodiment, the protective electrode may include an oxide protective electrode positioned on the cathode electrode, and the oxide protective electrode may include an Ag alloy.

[0017] In an embodiment, the oxidation protection electrode may include a side surface facing the non-light-emitting area, and the third tilt angle of the side surface of the oxidation protection electrode relative to the upper surface of the cathode electrode may be 60° to 90°.

[0018] In an embodiment, the oxide protection electrode may not cover the side surface of the cathode electrode that faces the non-light-emitting area.

[0019] In an embodiment, the thickness of the oxide protection electrode in the direction perpendicular to the main surface of the substrate can be [missing information]. or larger and Or smaller.

[0020] In an embodiment, the protective electrode may further include a moisture-permeable protective electrode positioned on the oxide protective electrode, and the moisture-permeable protective electrode may include a transparent oxide electrode.

[0021] In an embodiment, the moisture-permeable protective electrode may include a side surface facing the non-light-emitting area, and the fourth tilt angle of the side surface of the moisture-permeable protective electrode relative to the upper surface of the oxidation protective electrode may be 60° to 90°.

[0022] In an embodiment, the moisture-permeable protective electrode may not cover the side surface of the oxidation protective electrode facing the non-light-emitting area.

[0023] In an embodiment, the thickness of the moisture-permeable protective electrode in the direction perpendicular to the main surface of the substrate can be [missing information]. or larger and Or smaller.

[0024] In an embodiment, the pixel defining layer may contact the side surface of the moisture-permeable protective electrode, the side surface of the oxidation protective electrode, the side surface of the cathode electrode, and the side surface of the light-emitting layer, and the pixel defining layer completely covers the side surface of the moisture-permeable protective electrode, the side surface of the oxidation protective electrode, the side surface of the cathode electrode, and the side surface of the light-emitting layer.

[0025] In embodiments of this disclosure, a display device includes: a substrate including a light-emitting region and a non-light-emitting region; a first anode electrode positioned on the light-emitting region of the substrate; a first cathode electrode positioned on the first anode electrode; a first protective electrode positioned on the first cathode electrode; a pixel defining layer positioned on the non-light-emitting region of the substrate; a second anode electrode spaced apart from the first anode electrode, and the pixel defining layer being located between the second anode electrode and the first anode electrode; a second cathode electrode positioned on the second anode electrode; a second protective electrode positioned on the second cathode electrode; and a common electrode positioned on the pixel defining layer and overlapping the light-emitting region and the non-light-emitting region, wherein the common electrode includes a first portion contacting the first protective electrode, a second portion contacting the second protective electrode, and a third portion contacting the pixel defining layer, the third portion being positioned between the first portion and the second portion, and the first portion and the second portion extending from the third portion.

[0026] In an embodiment, the first cathode electrode and the second cathode electrode may be spaced apart from each other, and the pixel defining layer is located between the first cathode electrode and the second cathode electrode, and the first cathode electrode and the second cathode electrode may be electrically connected to each other through a common electrode.

[0027] In an embodiment, the first protective electrode may include a first oxidation protective electrode and a first moisture-permeable protective electrode positioned on the first cathode electrode, and the second protective electrode includes a second oxidation protective electrode and a second moisture-permeable protective electrode positioned on the second cathode electrode. The first moisture-permeable protective electrode and the second moisture-permeable protective electrode are spaced apart from each other, and a pixel defining layer is located between the first moisture-permeable protective electrode and the second moisture-permeable protective electrode. The first moisture-permeable protective electrode and the second moisture-permeable protective electrode are electrically connected to each other through a common electrode.

[0028] In embodiments of this disclosure, a method of manufacturing a display device includes: forming an anode electrode on a substrate, and sequentially stacking and forming a light-emitting layer, a cathode electrode, and a protective electrode on the anode electrode; forming a photoresist on the protective electrode and then performing an etching process to simultaneously remove a portion of each of the light-emitting layer, the cathode electrode, and the protective electrode; forming a pixel-defining layer covering the edge of the protective electrode and then forming a common electrode on the pixel-defining layer, the common electrode being in contact with the protective electrode and electrically connected to the protective electrode, wherein the tilt angle of the side surface of the light-emitting layer relative to the upper surface of the anode electrode is 60° to 90°.

[0029] According to one embodiment of the display device, multiple light-emitting elements can be formed by a photopatterning process, thereby providing a high-resolution display device. Furthermore, the display device according to one embodiment includes an oxidation-resistant cathode electrode, such that the light-emitting layer and the cathode electrode can be patterned using the same photopatterning process. Additionally, the display device according to one embodiment includes a protective electrode on the cathode electrode, thereby mitigating damage defects to the light-emitting elements caused during the manufacturing process.

[0030] The effects of the embodiments according to this disclosure are not limited to those mentioned above, and many more effects are included in the following description of this disclosure. Attached Figure Description

[0031] The above and other aspects and features of this disclosure will become more apparent from the detailed description of embodiments thereof with reference to the accompanying drawings, in which:

[0032] Figure 1 This is a perspective view showing a display device according to one embodiment;

[0033] Figure 2 It is shown Figure 1 A schematic cross-sectional view of the display device;

[0034] Figure 3 It is shown in Figure 2 A plan view showing the arrangement of the light-emitting areas in the display area;

[0035] Figure 4 It is along Figure 3 A schematic cross-sectional view of the line X1-X1';

[0036] Figure 5 It is shown Figure 4 A schematic enlarged cross-sectional view of the display element layer that overlaps with the first light-emitting area;

[0037] Figure 6 It is shown Figure 4 A schematic enlarged cross-sectional view of the display element layer that overlaps with the non-light-emitting area positioned between the first and second light-emitting areas;

[0038] Figures 7 to 16 It shows the manufacturing process. Figure 4 A cross-sectional view of the method for the display element layer and the thin-film encapsulation layer in the process;

[0039] Figure 17 This is a block diagram of an electronic device according to an embodiment of the present disclosure; and

[0040] Figure 18 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure. Detailed Implementation

[0041] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout refer to the same elements.

[0042] It will be understood that when an element is referred to as being "on" another element, the element can be directly on the other element, or an intermediary element can exist between the element and the other element. Conversely, when an element is referred to as being "directly on" another element, no intermediary element exists.

[0043] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or segments, these elements, components, areas, layers, and / or segments should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or segment from another. Therefore, without departing from the teachings herein, “first element,” “first component,” “first area,” “first layer,” or “first segment” discussed below may be designated as a second element, second component, second area, second layer, or second segment.

[0044] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms “a,” “an,” and “the” as used herein are intended to include the plural forms containing “at least one.” Thus, reference to an element “a” in a claim followed by reference to “the” element includes one element and multiple elements. For example, unless the context clearly indicates otherwise, “an element” has the same meaning as “at least one element.” “At least one” should not be construed as limiting “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will be further understood that, when used in this specification, the terms “comprises and / or comprising” or “includes and / or including” indicate the presence of the stated features, areas, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integrals, steps, operations, elements, components, and / or groups thereof.

[0045] Furthermore, spatial relative terms such as “below” or “bottom” and “above” or “top” may be used herein to describe the relationship between one element and another, as shown in the accompanying drawings. It will be understood that, in addition to the orientation depicted in the drawings, spatial relative terms are also intended to cover different orientations of the device. For example, if the device is flipped in one drawing, an element described as being “below” the other elements will subsequently be oriented to be “above” the other elements. Thus, depending on the specific orientation of the drawing, the term “below” can encompass both “below” and “above” orientations. Similarly, if the device is flipped in one drawing, an element described as being “below” or “under” the other elements will subsequently be oriented to be “above” the other elements. Thus, the terms “below” or “under” can encompass both “above” and “below” orientations.

[0046] Given the measurements discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system), as used herein, “about” or “approximately” includes the stated value and means within an acceptable range of deviation for a particular value as determined by one of ordinary skill in the art. For example, a term such as “about” can mean within one or more standard deviations, or within ±30%, 20%, 10%, or 5% of the stated value.

[0047] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that, unless expressly defined herein, terms (such as those defined in a general dictionary) should be interpreted as having a meaning consistent with their context in the relevant field and their meaning in this disclosure, and will not be interpreted in an idealized or overly formalized sense.

[0048] Embodiments are described herein with reference to cross-sectional views as schematic representations of idealized embodiments. Thus, variations in the shapes illustrated will be expected due to factors such as manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include deviations in shape due to factors such as manufacturing. For example, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0049] Throughout this disclosure, the phrase "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0050] Figure 1 This is a perspective view showing a display device according to one embodiment.

[0051] Reference Figure 1 The display device 10 displays moving or still images. The display device 10 can be applied to any electronic device that provides a display screen. For example, electronic devices may include televisions, laptops, monitors, billboards, Internet of Things (IoT) devices, mobile phones, smartphones, tablet PCs (“PCs”), electronic watches, smart glasses, smartwatches, watch phones, head-mounted displays, mobile communication terminals, electronic diaries, e-books, portable multimedia players (“PMPs”), navigators, game consoles, digital cameras, and portable video cameras, etc.

[0052] exist Figure 1The diagram defines a first direction (X-axis), a second direction (Y-axis), and a third direction (Z-axis). The first direction (X-axis) and the second direction (Y-axis) can be perpendicular to each other, as can the first direction (X-axis) and the third direction (Z-axis), and vice versa. It is understood that the first direction (X-axis) refers to the horizontal direction in the diagram, the second direction (Y-axis) refers to the vertical direction in the diagram, and the third direction (Z-axis) refers to the vertical direction in the diagram, that is, the thickness direction. In other words, the Z-axis direction can refer to the direction perpendicular to the substrate 110 (see Figure 110). Figure 2 The direction perpendicular to the main surface of the surface. In the following description, unless otherwise stated, "direction" can refer to two directions extending along that direction. Furthermore, when it is necessary to distinguish between two "directions" extending to both sides, one side will be referred to as the "one-side direction," and the other side will be referred to as the "other-side direction." Based on Figure 1 The direction pointed to by the arrow indicating the direction will be called one side, and the opposite direction will be called the other side.

[0053] In the following description, for ease of description, when referring to the surface of the display device 10 or each component constituting the display device 10, the surface displaying the image (i.e., a surface facing the third direction (Z-axis direction)) will be referred to as the upper surface, and the surface opposite to it will be referred to as the other surface, but this disclosure is not limited thereto. One surface and the other surface of a component may be referred to as the front surface and the rear surface, respectively, or may be referred to as the first surface or the second surface. Furthermore, when describing the relative position of each component of the display device 10, one side in the third direction (Z-axis direction) may be referred to as the upper portion, and the other side in the third direction (Z-axis direction) may be referred to as the lower portion.

[0054] Various modifications can be made to the planar shape of the display device 10. For example, the display device 10 can have planar shapes such as a rectangle with a long width, a rectangle with a long length, a square, a rectangle with rounded corners (vertices), other polygons, and circles.

[0055] The display device 10 may include a display panel 100, a display driver 200, a circuit board 300, and a touch driver 400.

[0056] The display panel 100 may include a main region MA and a sub-region SBA. The main region MA may include a display region DA containing pixels for displaying images and a non-display region NDA disposed near the display region DA. The main region MA and the sub-region SBA may include flexible materials capable of withstanding bending, folding, and rolling.

[0057] The display area DA is the area where an image can be displayed, and the non-display area NDA is the area where an image is not displayed. The display area DA can be referred to as an active area, and the non-display area NDA can be referred to as a passive area. The display area DA typically occupies the center of the display device 10. The non-display area NDA can be the outer area of ​​the display area DA. The non-display area NDA can be defined as the edge area of ​​the main area MA of the display panel 100. The non-display area NDA may include lines for supplying signals to the display area DA and lines for connecting the display driver 200 to the display area DA.

[0058] The sub-region SBA can extend from one side of the main region MA. When the sub-region SBA is bent, it can overlap with the main region MA in the thickness direction (e.g., the third direction (Z-axis direction)). The sub-region SBA may include display pads connected to the display driver 200 and the circuit board 300. In another embodiment, the sub-region SBA may be omitted, and the display driver 200 and the display pads may be located in the non-display region NDA.

[0059] The display driver 200 can output signals and voltages for driving the display panel 100. The display driver 200 can be formed of an integrated circuit (“IC”) and can be packaged on the display panel 100 by a glass-on-chip (“COG”) method, a plastic-on-chip (“COP”) method, or an ultrasonic bonding method. For example, the display driver 200 can be disposed in a sub-region SBA and can overlap with the main region MA in the thickness direction by bending the sub-region SBA. As another example, the display driver 200 can be packaged on a circuit board 300.

[0060] The circuit board 300 can be attached to the display pads of the display panel 100 using an anisotropic conductive film (“ACF”). The circuit board 300 can be electrically connected to the display pads. The circuit board 300 can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a flip-chip film.

[0061] The touch driver 400 can be packaged on the circuit board 300. The touch driver 400 can be connected to the touch sensor layer of the display panel 100. Figure 2 (touch sensor layer 180).

[0062] Figure 2 It is shown Figure 1 A schematic cross-sectional view of the display device.

[0063] Reference Figure 2The display panel 100 may include a display layer DPL, a touch sensor layer 180, and a color filter layer 190. The display layer DPL may include a substrate 110, a thin film transistor layer 130, a display element layer 150, and a thin film encapsulation layer 170.

[0064] The substrate 110 may be a matrix substrate or a matrix component. The substrate 110 may be a flexible substrate capable of withstanding bending, folding, or rolling. For example, the substrate 110 may include a polymer resin such as polyimide (“PI”), but is not limited thereto. In another embodiment, the substrate 110 may include a glass material or a metal material.

[0065] Thin-film transistor layer 130 can be positioned on substrate 110. Thin-film transistor layer 130 can be positioned at the portion overlapping the display area DA, non-display area NDA, and sub-region SBA. Thin-film transistor layer 130 may include multiple thin-film transistors (…). Figure 4 Thin-film transistors (TFTs).

[0066] The display element layer 150 may be positioned on the thin-film transistor layer 130. The display element layer 150 may be positioned at the portion overlapping with the display area DA. The display element layer 150 may include, but is not limited to, at least one of an organic light-emitting diode (“LED”) including an organic light-emitting layer, a quantum dot light-emitting diode (“LED”) including a quantum dot light-emitting layer, an inorganic light-emitting diode including an inorganic semiconductor, and a micro light-emitting diode (“microLED”).

[0067] A thin-film encapsulation layer 170 may be positioned on the display element layer 150. The thin-film encapsulation layer 170 may be positioned at the portion overlapping the display area DA and the non-display area NDA. The thin-film encapsulation layer 170 may cover the upper surface and sides of the display element layer 150 and may protect the display element layer 150 from external oxygen and moisture. The thin-film encapsulation layer 170 may include at least one inorganic layer and at least one organic layer to encapsulate the display element layer 150.

[0068] Touch sensor layer 180 can be disposed on thin-film encapsulation layer 170. Touch sensor layer 180 can be positioned at the overlap with display area DA and non-display area NDA. Touch sensor layer 180 can sense user touch using mutual capacitance or self-capacitance.

[0069] A color filter layer 190 may be positioned on the touch sensor layer 180. The color filter layer 190 may be positioned at the portion overlapping the display area DA and the non-display area NDA. The color filter layer 190 can reduce reflected light caused by external light by absorbing a portion of the light introduced from outside the display device 10. Therefore, the color filter layer 190 can prevent color distortion caused by the reflection of external light.

[0070] Since the color filter layer 190 is disposed directly on the touch sensor layer 180, the display device 10 does not require a separate substrate for the color filter layer 190. Therefore, the thickness of the display device 10 can be relatively small. Furthermore, according to an embodiment, the color filter layer 190 can be omitted.

[0071] like Figure 2 As shown, a portion of the display layer DPL that overlaps with the sub-region SBA can be bent. When a portion of the display layer DPL is bent, the display driver 200, the circuit board 300, and the touch driver 400 can overlap with the main region MA in the third direction (Z-axis direction).

[0072] Figure 3 It is shown in Figure 2 A plan view of the arrangement of the light-emitting areas in the display area. As used herein, a "plan view" refers to a view on substrate 110 (see [reference]). Figure 4 A view along the thickness direction (i.e., the Z-axis direction).

[0073] Reference Figure 3 According to one embodiment, the display area DA may include a plurality of first light-emitting areas EA1, a plurality of second light-emitting areas EA2, and a plurality of third light-emitting areas EA3, as well as a non-light-emitting area NLA. The non-light-emitting area NLA may be positioned around each of the plurality of first light-emitting areas EA1, the plurality of second light-emitting areas EA2, and the plurality of third light-emitting areas EA3. Thus, it can be understood that the substrate 110 may include the light-emitting areas EA and the non-light-emitting areas NLA.

[0074] The non-emitting region (NLA) can block light emitted from each of the multiple first emitting regions (EA1), multiple second emitting regions (EA2), and multiple third emitting regions (EA3). For this reason, the non-emitting region (NLA) can assist in ensuring that the light emitted from the multiple first emitting regions (EA1), multiple second emitting regions (EA2), and multiple third emitting regions (EA3) does not mix.

[0075] The light-emitting region EA may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3 that emit different colors of light. Each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may emit red, green, or blue light, and the color of the light emitted from each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may be determined according to the light-emitting element ED described later (see [link to relevant documentation]). Figure 4The types of light-emitting areas differ. Although the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 are shown to have the same size and shape, this disclosure is not limited thereto. The size and shape of each of the first light-emitting area EA1, the second light-emitting area EA2, and the third light-emitting area EA3 can be freely adjusted according to the desired characteristics.

[0076] A pixel group PXG can be formed by configuring at least one first emitting region EA1, at least one second emitting region EA2, and at least one third emitting region EA3 that are adjacent to each other. The pixel group PXG can be the smallest unit for emitting white light. However, according to embodiments, various modifications can be made to the type and / or number of the first emitting region EA1, the second emitting region EA2, and the third emitting region EA3 that constitute the pixel group PXG.

[0077] In the plan view, the pixel defining layer 151 can be positioned at the portion overlapping with a portion of the light-emitting region EA and the non-light-emitting region NLA. In the plan view, the pixel defining layer 151 can define an opening OP therein. In the plan view, the pixel defining layer 151 can be positioned around the opening OP.

[0078] Figure 4 It is along Figure 3 A schematic cross-sectional view of the line X1-X1'. Figure 4 Is with Figure 3 The diagram shows a partial cross-sectional view of the display device 10 where the display area DA overlaps, and also shows a schematic cross-section of the display layer DPL. That is, Figure 4 This shows the display area located within the display device 10. Figure 3 The cross-section of the substrate 110, thin-film transistor layer 130, display element layer 150, and thin-film encapsulation layer 170 at the overlapping portion of the display area DA. Since the substrate 110 has already been described, its description will be omitted.

[0079] Reference Figure 4 The thin-film transistor layer 130 can be positioned on the substrate 110. The thin-film transistor layer 130 may include a first buffer layer 111, a thin-film transistor TFT, a gate insulating layer 113, a first interlayer insulating layer 121, a capacitor electrode CPE, a second interlayer insulating layer 123, a first connection electrode CNE1, a first via layer 125, a second connection electrode CNE2, and a second via layer 127.

[0080] A first buffer layer 111 may be positioned on a substrate 110. The first buffer layer 111 may include an inorganic layer capable of preventing the penetration of air or moisture. For example, the first buffer layer 111 may include a plurality of inorganic layers stacked alternately.

[0081] Thin-film transistors (TFTs) can be disposed on the first buffer layer 111 and can be configured to connect to pixels. Figure 3 Each of the pixels (PX) is a pixel circuit. For example, a thin-film transistor (TFT) can be a driving transistor or a switching transistor of the pixel circuit. A thin-film transistor (TFT) may include an active layer (having a channel region ACT, a source electrode SE, and a drain electrode DE) and a gate electrode GE.

[0082] An active layer can be disposed on the first buffer layer 111. The channel region ACT of the active layer can overlap with the gate electrode GE in the third direction (Z-axis direction), and the active layer can be insulated from the gate electrode GE by the gate insulating layer 113. The material of the active layer is conductive, so that the relatively low conductivity portion of the active layer can form the channel region ACT, and the relatively high conductivity portion of the active layer can form the source electrode SE and the drain electrode DE.

[0083] The gate electrode GE can be positioned on the gate insulating layer 113. The gate electrode GE can overlap with the channel region ACT of the active layer, and the gate insulating layer 113 is located between the gate electrode GE and the channel region ACT of the active layer.

[0084] Gate insulating layer 113 may be positioned on the active layer. Gate insulating layer 113 may cover the active layer and the first buffer layer 111, and may insulate the active layer from the gate electrode GE. Gate insulating layer 113 may include a contact hole through which the first connection electrode CNE1 passes.

[0085] The first interlayer insulating layer 121 may cover the gate electrode GE and the gate insulating layer 113. The first interlayer insulating layer 121 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the first interlayer insulating layer 121 may be connected to the contact hole of the gate insulating layer 113 and the contact hole of the second interlayer insulating layer 123.

[0086] The capacitor electrode CPE can be positioned on the first interlayer insulating layer 121. The capacitor electrode CPE can overlap with the gate electrode GE in the third direction (Z-axis direction). The capacitor electrode CPE and the gate electrode GE can form a capacitor.

[0087] The second interlayer insulating layer 123 may cover the capacitor electrode CPE and the first interlayer insulating layer 121. The second interlayer insulating layer 123 may include a contact hole through which the first connection electrode CNE1 passes. The contact hole of the second interlayer insulating layer 123 may be connected to the contact hole of the first interlayer insulating layer 121 and the contact hole of the gate insulating layer 113.

[0088] The first connection electrode CNE1 can be positioned on the second interlayer insulating layer 123. The first connection electrode CNE1 can electrically connect the drain electrode DE of the thin-film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 can be inserted into a contact hole formed in the first interlayer insulating layer 121, the second interlayer insulating layer 123 and the gate insulating layer 113, and thus can contact the drain electrode DE of the thin-film transistor TFT.

[0089] The first via layer 125 may cover the first connecting electrode CNE1 and the second interlayer insulating layer 123. The first via layer 125 may planarize the underlying structure. The first via layer 125 may include a contact hole through which the second connecting electrode CNE2 passes.

[0090] The second connecting electrode CNE2 can be positioned on the first via layer 125. The second connecting electrode CNE2 can be inserted into a contact hole formed in the first via layer 125 to contact the first connecting electrode CNE1. The second connecting electrode CNE2 can electrically connect the first connecting electrode CNE1 to the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3.

[0091] The second via layer 127 may cover the second connecting electrode CNE2 and the first via layer 125. The second via layer 127 may include contact holes through which the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 pass.

[0092] Display element layer 150 may be positioned on second via layer 127. Display element layer 150 may include light-emitting element ED, pixel defining layer 151, oxide protection electrode CRE, moisture-permeable protection electrode MPE, and common electrode CCE. Hereinafter, oxide protection electrode CRE and moisture-permeable protection electrode MPE may be used as common protection electrodes.

[0093] In one embodiment, the light-emitting element ED may include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The light-emitting element ED may include a first light-emitting element ED1 disposed in a first light-emitting region EA1, a second light-emitting element ED2 disposed in a second light-emitting region EA2, and a third light-emitting element ED3 disposed in a third light-emitting region EA3.

[0094] Depending on the material of the light-emitting layer EL, the light-emitting element ED overlapping with each of the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 can emit light of different colors. For example, the first light-emitting element ED1 can emit red light, the second light-emitting element ED2 can emit green light, and the third light-emitting element ED3 can emit blue light.

[0095] In one embodiment, the anode electrode AE ​​can be positioned on the second via layer 127. The anode electrode AE ​​can be electrically connected to the drain electrode DE of the thin-film transistor TFT via a first connection electrode CNE1 and a second connection electrode CNE2.

[0096] The anode electrode AE ​​may include a first anode electrode AE1 disposed in the first light-emitting region EA1, a second anode electrode AE2 disposed in the second light-emitting region EA2, and a third anode electrode AE3 disposed in the third light-emitting region EA3. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 may be disposed spaced apart from each other on the second via layer 127.

[0097] One embodiment of the anode electrode AE ​​may have a stacked layered structure, wherein stacked layers of materials with high work functions (such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (ZnO) and indium oxide (In2O3)) and reflective material layers (such as Ag, Mg, Al, Pt, Pb, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or mixtures thereof) are stacked. For example, the anode electrode AE ​​may have a multilayer structure of ITO / Mg, ITO / MgF2, ITO / Ag and ITO / Ag / ITO, but is not limited thereto.

[0098] In one embodiment, the light-emitting layer EL can be positioned on the anode electrode AE. The light-emitting layer EL may include a first light-emitting layer EL1, a second light-emitting layer EL2, and a third light-emitting layer EL3 respectively disposed in a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 may emit different colors of light. For example, the first light-emitting layer EL1 may emit red light, the second light-emitting layer EL2 may emit green light, and the third light-emitting layer EL3 may emit blue light, but this disclosure is not limited thereto.

[0099] According to one embodiment, the light-emitting layer (EL) can be formed in a manufacturing process via photolithography. In other words, the light-emitting layer (EL) can be formed through optical and etching processes without using a separate fine metal mask. The manufacturing process will be described later.

[0100] According to one embodiment, the cathode electrode CE can be positioned on the light-emitting layer EL. According to one embodiment, the cathode electrode CE can be integrally formed with the light-emitting layer EL. The cathode electrode CE may include a first cathode electrode CE1, a second cathode electrode CE2, and a third cathode electrode CE3 respectively disposed in a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 may be spaced apart from each other, and a pixel defining layer 151 is located between the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3.

[0101] The cathode electrode CE can receive a common voltage or a low-potential voltage. Specifically, when the anode electrode AE ​​receives a voltage corresponding to the data voltage and the cathode electrode CE receives a low-potential voltage, a potential difference is formed between the anode electrode AE ​​and the cathode electrode CE, and light can therefore be emitted from the light-emitting layer EL.

[0102] The cathode electrode (CE) can be formed during the manufacturing process using the same optical patterning process as that used to form the light-emitting layer (EL). Figure 4 The form shown is illustrated. In other words, the cathode electrode (CE) can be formed using optical and etching processes without the use of a separate fine metal mask. The manufacturing process will be described later.

[0103] According to one embodiment, an oxidation protection electrode CRE can be positioned on a cathode electrode CE. The oxidation protection electrode CRE can be integrally formed with the cathode electrode CE. The oxidation protection electrode CRE can include a first oxidation protection electrode CRE1, a second oxidation protection electrode CRE2, and a third oxidation protection electrode CRE3 respectively disposed in a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first oxidation protection electrode CRE1, the second oxidation protection electrode CRE2, and the third oxidation protection electrode CRE3 can be spaced apart from each other, and a pixel defining layer 151 is located between the first oxidation protection electrode CRE1, the second oxidation protection electrode CRE2, and the third oxidation protection electrode CRE3.

[0104] The oxidation protection electrode (CRE) can protect the surface of the light-emitting layer (EL) and the surface of the cathode electrode (CE) during the manufacturing process.

[0105] The oxidation protection electrode CRE can be electrically connected to the cathode electrode CE. The first oxidation protection electrode CRE1 can be electrically connected to the first cathode electrode CE1, the second oxidation protection electrode CRE2 can be electrically connected to the second cathode electrode CE2, and the third oxidation protection electrode CRE3 can be electrically connected to the third cathode electrode CE3.

[0106] The oxide protective electrode (CRE) can be formed in the manufacturing process using the same photopatterning process as that used to form the light-emitting layer (EL) and the cathode electrode (CE). Figure 4 The form shown is used without the use of a separate fine metal mask. The manufacturing process will be described later.

[0107] According to one embodiment, the moisture-permeable protective electrode (MPE) can be positioned on the oxidation protection electrode (CRE). The MPE may include a first moisture-permeable protective electrode (MPE1), a second moisture-permeable protective electrode (MPE2), and a third moisture-permeable protective electrode (MPE3), respectively disposed in the first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3. The first moisture-permeable protective electrode (MPE1), the second moisture-permeable protective electrode (MPE2), and the third moisture-permeable protective electrode (MPE3) may be spaced apart from each other, and the pixel defining layer 151 is located between the first moisture-permeable protective electrode (MPE1), the second moisture-permeable protective electrode (MPE2), and the third moisture-permeable protective electrode (MPE3). However, according to an embodiment, the moisture-permeable protective electrode (MPE) may be omitted.

[0108] Moisture-permeable protective electrode (MPE) can solve the problem of damage to the light-emitting layer (EL) and the cathode electrode (CE) during the manufacturing process.

[0109] The moisture permeable protection electrode MPE can be electrically connected to the cathode electrode CE through the oxidation protection electrode CRE. The first moisture permeable protection electrode MPE1 can be electrically connected to the first cathode electrode CE1 through the first oxidation protection electrode CRE1, the second moisture permeable protection electrode MPE2 can be electrically connected to the second cathode electrode CE2 through the second oxidation protection electrode CRE2, and the third moisture permeable protection electrode MPE3 can be electrically connected to the third cathode electrode CE3 through the third oxidation protection electrode CRE3.

[0110] The moisture-permeable protective electrode (MPE) can be formed in the manufacturing process using the same photopatterning process as that used to form the light-emitting layer (EL) and the cathode electrode (CE). Figure 4 The form shown is used without the use of a separate fine metal mask. The manufacturing process will be described later.

[0111] According to one embodiment, the pixel defining layer 151 can be positioned at the portion overlapping with the non-light-emitting region NLA. The pixel defining layer 151 can be positioned on the second via layer 127, the anode electrode AE, and the moisture-permeable protective electrode MPE.

[0112] The pixel limiting layer 151 can separate and insulate each of the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3; it can separate and insulate each of the first oxidation protection electrode CRE1, the second oxidation protection electrode CRE2, and the third oxidation protection electrode CRE3; and it can separate and insulate each of the first moisture-permeable protection electrode MPE1, the second moisture-permeable protection electrode MPE2, and the third moisture-permeable protection electrode MPE3.

[0113] The pixel defining layer 151 can define the opening OP. The pixel defining layer 151 can expose the opening OP and surround the edges of the light-emitting element ED, the oxide protection electrode CRE, and the moisture-permeable protection electrode MPE.

[0114] According to one embodiment, a common electrode CCE can be positioned on a moisture-permeable protective electrode MPE. The common electrode CCE can contact each of the first moisture-permeable protective electrodes MPE1, the second moisture-permeable protective electrode MPE2, and the third moisture-permeable protective electrode MPE3, and can electrically connect the first moisture-permeable protective electrodes MPE1, the second moisture-permeable protective electrodes MPE2, and the third moisture-permeable protective electrodes MPE3 to each other. In other words, the common electrode CCE can be positioned on the pixel defining layer 151, and the common electrode CCE contacts the protective electrode (e.g., the moisture-permeable protective electrode MPE) at the portion overlapping with the opening OP.

[0115] The common electrode CCE can electrically connect the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3, which are spaced apart from each other. Specifically, the first cathode electrode CE1 can be connected to the common electrode CCE through the first oxidation protection electrode CRE1 and the first moisture permeation protection electrode MPE1, and the second cathode electrode CE2 can be connected to the common electrode CCE through the second oxidation protection electrode CRE2 and the second moisture permeation protection electrode MPE2, and the third cathode electrode CE3 can be connected to the common electrode CCE through the third oxidation protection electrode CRE3 and the third moisture permeation protection electrode MPE3.

[0116] According to one embodiment, a thin-film encapsulation layer 170 may be positioned on a display element layer 150. The thin-film encapsulation layer 170 may be positioned at the portion overlapping the light-emitting region EA and the non-light-emitting region NLA. The thin-film encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175 stacked sequentially.

[0117] The first encapsulation layer 171 can be positioned on the common electrode CCE. Based on the contour of the lower structure, the first encapsulation layer 171 has a uniform thickness and can cover the lower structure. Therefore, the first encapsulation layer 171 may include a step difference.

[0118] The first encapsulation layer 171 may include one or more inorganic insulating materials and may prevent oxygen or moisture from penetrating into the light-emitting element ED. For example, the first encapsulation layer 171 may include at least one of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0119] The second encapsulation layer 173 can be positioned on the first encapsulation layer 171. The second encapsulation layer 173 can flatten the step difference formed by the first encapsulation layer 171. In addition, the second encapsulation layer 173 can protect the display element layer 150 from particles.

[0120] The second encapsulation layer 173 may include polymeric materials. For example, the second encapsulation layer 173 may include silicone resins, acrylic resins, epoxy resins, and mixtures thereof.

[0121] A third encapsulation layer 175 may be positioned on top of the second encapsulation layer 173. The third encapsulation layer 175 may include one or more inorganic insulating materials and may prevent oxygen or moisture from penetrating into the display element layer 150 and the first encapsulation layer 171. The third encapsulation layer 175 may include the same material as the first encapsulation layer 171. Further details will be omitted.

[0122] Figure 5 It is shown Figure 4 A schematic enlarged cross-sectional view of the display element layer that overlaps with the first light-emitting area.

[0123] Reference Figure 5 The first light-emitting layer EL1 may include an upper surface 1a and a side surface 1c. The upper surface 1a may be a surface facing the first cathode electrode CE1, and the side surface 1c may be a surface facing the non-light-emitting region NLA. The upper surface 1a and the side surface 1c may be connected to each other.

[0124] The side surface 1c of the first light-emitting layer EL1 can be an inclined surface. The side surface 1c of the first light-emitting layer EL1 can have a high taper angle. For example, the first tilt angle θ1c of the side surface 1c of the first light-emitting layer EL1 relative to the upper surface of the first anode electrode AE1 can have a range from 60° to 90°.

[0125] As described above, since the light-emitting layer EL is formed by a photo-patterning process without using a separate mask, the first light-emitting layer EL1 can have a clear side surface 1c without tail defects caused by mask shadows.

[0126] The upper surface 1a of the first light-emitting layer EL1 can contact the first cathode electrode CE1 and can be covered by the first cathode electrode CE1.

[0127] According to one embodiment, a first cathode electrode CE1 can be positioned on a first light-emitting layer EL1. The first cathode electrode CE1 and the first light-emitting layer EL1 can be integrally formed. The first cathode electrode CE1 may not be in contact with the side surface 1c of the first light-emitting layer EL1. In other words, the first cathode electrode CE1 may not extend to cover the side surface 1c of the first light-emitting layer EL1.

[0128] The first cathode electrode CE1 may include an upper surface 3a and a side surface 3c. The upper surface 3a may be a surface facing the first oxide protection electrode CRE1, and the side surface 3c may be a surface facing the non-light-emitting region NLA. The upper surface 3a and the side surface 3c may be connected to each other.

[0129] The side surface 3c of the first cathode electrode CE1 can be an inclined surface. In addition, the side surface 3c of the first cathode electrode CE1 can be aligned with the side surface 1c of the first light-emitting layer EL1 on the same line, but is not limited thereto.

[0130] The side surface 3c of the first cathode electrode CE1 can have a high taper angle. For example, the second tilt angle θ3c of the side surface 3c of the first cathode electrode CE1 relative to the upper surface 1a of the first light-emitting layer EL1 can have a range from 60° to 90°.

[0131] As described above, since the cathode electrode CE is formed by a photo-patterning process without the use of a separate mask, the first cathode electrode CE1 can have a clear side surface 3c without tail defects caused by masking elements.

[0132] The upper surface 3a of the first cathode electrode CE1 can contact the first oxidation protection electrode CRE1 and can be covered by the first oxidation protection electrode CRE1.

[0133] The cathode electrode CE may include a metal oxide. For example, the cathode electrode CE may include at least one of ytterbium oxide (Yb₂O₃) and terbium oxide (Tb₂O₃). Ytterbium oxide (Yb₂O₃) or terbium oxide (Tb₂O₃) may be materials with excellent antioxidant properties.

[0134] In one embodiment of the display device 10, since the cathode electrode CE comprises a metal oxide, the process for forming the cathode electrode CE can be performed using the same optical patterning process as the process for forming the light-emitting layer EL. In other words, the display device 10 can be easy to manufacture.

[0135] In some embodiments, the thickness Hc of the cathode electrode CE, measured in the Z-axis direction, may have or larger and Or a smaller value.

[0136] In one embodiment, a first oxidation protection electrode CRE1 can be positioned on a first cathode electrode CE1. The first oxidation protection electrode CRE1 and the first cathode electrode CE1 can be integrally formed. The first oxidation protection electrode CRE1 may not contact the side surface 3c of the first cathode electrode CE1. In other words, the first oxidation protection electrode CRE1 may not extend to cover the side surface 3c of the first cathode electrode CE1.

[0137] The first oxidation protection electrode CRE1 may include an upper surface 5a and a side surface 5c. The upper surface 5a may be a surface facing the first moisture-permeable protection electrode MPE1, and the side surface 5c may be a surface facing the non-luminescent region NLA. The upper surface 5a and the side surface 5c may be connected to each other.

[0138] The side surface 5c of the first oxidation protection electrode CRE1 can be an inclined surface. The side surface 5c of the first oxidation protection electrode CRE1 can be aligned with the side surface 3c of the first cathode electrode CE1 on the same line, but is not limited thereto.

[0139] The side surface 5c of the first oxidation protection electrode CRE1 can have a high taper angle. For example, the third tilt angle θ5c of the side surface 5c of the first oxidation protection electrode CRE1 relative to the upper surface 3a of the first cathode electrode CE1 can have a range from 60° to 90°.

[0140] As described above, since the oxide protection electrode CRE is formed by a photo-patterning process without the use of a separate mask, the first oxide protection electrode CRE1 can have a clear side surface 5c without tail defects caused by masking elements.

[0141] The upper surface 5a of the first oxidation protection electrode CRE1 can contact the first moisture-permeable protection electrode MPE1 and can be covered by the first moisture-permeable protection electrode MPE1.

[0142] The oxidation protection electrode (CRE) may include a chemically resistant Ag alloy. For example, the CRE may include at least one of Ag-Bi alloy and Ag-Sb alloy. According to one embodiment, the CRE includes a chemically resistant Ag alloy, thereby resolving damage defects in the light-emitting layer (EL) and the cathode electrode (CE) through an etching process.

[0143] In some embodiments, the thickness Hr of the oxide protective electrode CRE, measured in the Z-axis direction, can be... or larger and Or smaller.

[0144] According to one embodiment, a first moisture-permeable protective electrode MPE1 can be positioned on a first oxidation-protective electrode CRE1. The first moisture-permeable protective electrode MPE1 and the first oxidation-protective electrode CRE1 can be integrally formed. The first moisture-permeable protective electrode MPE1 may not contact the side surface 5c of the first oxidation-protective electrode CRE1. In other words, the first moisture-permeable protective electrode MPE1 may not extend to cover the side surface 5c of the first oxidation-protective electrode CRE1.

[0145] The first moisture-permeable protective electrode MPE1 may include an upper surface 7a and a side surface 7c. The upper surface 7a may be the surface in contact with the common electrode CCE, and the side surface 7c may be the surface facing the non-light-emitting region NLA. The upper surface 7a and the side surface 7c may be connected to each other.

[0146] The side surface 7c of the first moisture-permeable protective electrode MPE1 can be an inclined surface. The side surface 7c of the first moisture-permeable protective electrode MPE1 can be aligned with the side surface 5c of the first oxidation protective electrode CRE1 on the same line, but is not limited thereto.

[0147] The side surface 7c of the first moisture-permeable protective electrode MPE1 can have a high taper angle. For example, the fourth tilt angle θ7c of the side surface 7c of the first moisture-permeable protective electrode MPE1 relative to the upper surface 5a of the first oxidation protective electrode CRE1 can have a range from 60° to 90°.

[0148] As described above, since the moisture-permeable protective electrode MPE is formed by a photo-patterning process without the use of a separate mask, the first moisture-permeable protective electrode MPE1 can have a clear side surface 7c without tail defects caused by masking elements.

[0149] The upper surface 7a of the first moisture-permeable protective electrode MPE1 can contact the common electrode CCE and the pixel defining layer 151, and can be covered by the common electrode CCE and the pixel defining layer 151.

[0150] A moisture-permeable protective electrode (MPE) may include a transparent oxide electrode. For example, the moisture-permeable protective electrode (MPE) may include at least one of indium tin oxide (“ITO”), indium zinc oxide (“IZO”), and zinc indium tin oxide (“ZITO”). According to one embodiment, the moisture-permeable protective electrode (MPE) includes a transparent oxide electrode with moisture-permeable properties, thereby solving the problem of damage defects to the light-emitting layer (EL) and the cathode electrode (CE) caused during the manufacturing process.

[0151] In some embodiments, the thickness Hm of the moisture-permeable protective electrode MPE, measured in the Z-axis direction, can have or larger and Or a smaller value.

[0152] According to one embodiment, a pixel defining layer 151 may surround an opening OP and may be positioned on a first moisture-permeable protective electrode MPE1. The pixel defining layer 151 may expose the moisture-permeable protective electrode MPE at the portion overlapping with the light-emitting region EA. The pixel defining layer 151 may contact the upper surface 7a and side surface 7c of the first moisture-permeable protective electrode MPE1 and may completely cover the side surface 7c of the first moisture-permeable protective electrode MPE1.

[0153] Furthermore, the pixel defining layer 151 can contact the side surface 5c of the first oxide protection electrode CRE1, the side surface 3c of the first cathode electrode CE1, and the side surface 1c of the first light-emitting layer EL1, and can completely cover the side surface 5c of the first oxide protection electrode CRE1, the side surface 3c of the first cathode electrode CE1, and the side surface 1c of the first light-emitting layer EL1.

[0154] The pixel-defining layer 151 can transmit light emitted from the light-emitting element ED without blocking the light.

[0155] The pixel defining layer 151 may include an inorganic insulating material. For example, the pixel defining layer 151 may include at least one of aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0156] According to one embodiment, the common electrode CCE may contact the first moisture-permeable protective electrode MPE1 at the portion overlapping with the opening OP. The common electrode CCE may be formed at the portion overlapping with the light-emitting region EA and the non-light-emitting region NLA to have a consistent thickness along the contour formed by the pixel defining layer 151 and the moisture-permeable protective electrode MPE.

[0157] The common electrode CCE may include a transparent oxide electrode. For example, the common electrode CCE may include indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc tin oxide (“ZTO”), and zinc indium tin oxide (“ZITO”).

[0158] For ease of description, although the display element layer 150 positioned at the portion overlapping the first light-emitting region EA1 has been described with reference to the accompanying drawings (see Figure 150), Figure 4 However, it is located in the second luminescent region EA2 (see Figure 4 ) and the third luminescent region EA3 (see Figure 4 The structure and characteristics of the display element layer 150 at the overlapping portion can be the same as those of the display element layer 150 located at the portion overlapping with the first light-emitting region EA1.

[0159] Figure 6 It is shown Figure 4A schematic enlarged cross-sectional view of the display element layer that overlaps with the non-light-emitting area positioned between the first and second light-emitting areas.

[0160] Reference Figure 6 The first light-emitting element ED1 and the second light-emitting element ED2 may be spaced apart from each other in a first direction (X-axis direction), and the pixel defining layer 151 is located between the first light-emitting element ED1 and the second light-emitting element ED2. The first light-emitting layer EL1 and the first cathode electrode CE1 included in the first light-emitting element ED1, and the second light-emitting layer EL2 and the second cathode electrode CE2 included in the second light-emitting element ED2 may not overlap with the non-light-emitting region NLA.

[0161] The first oxidation protection electrode CRE1 and the second oxidation protection electrode CRE2 may be spaced apart from each other in a first direction (X-axis direction), and the pixel defining layer 151 is located between the first oxidation protection electrode CRE1 and the second oxidation protection electrode CRE2. The common electrode CCE may be positioned between the first oxidation protection electrode CRE1 and the second oxidation protection electrode CRE2 in the first direction (X-axis direction). The first oxidation protection electrode CRE1 and the second oxidation protection electrode CRE2 may not overlap with the non-light-emitting region NLA.

[0162] The first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2 may be spaced apart from each other in the first direction (X-axis direction), and the pixel defining layer 151 is located between the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2. The common electrode CCE may be positioned between the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2 in the first direction (X-axis direction). The first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2 may not overlap with the non-light-emitting region NLA.

[0163] In some embodiments, depending on the contact structure, the common electrode CCE may include a first portion CCE1, a second portion CCE2, and a third portion CCE3. The first portion CCE1 may be the portion that contacts the first moisture-permeable protective electrode MPE1, the second portion CCE2 may be the portion that contacts the second moisture-permeable protective electrode MPE2, and the third portion CCE3 may be the portion that contacts the pixel defining layer 151.

[0164] The first part CCE1 and the second part CCE2 of the common electrode CCE can be spaced apart from each other, and the third part CCE3 is located between the first part CCE1 and the second part CCE2, and the first part CCE1, the second part CCE2 and the third part CCE3 can be formed integrally. That is, the first part CCE1 and the second part CCE2 can extend from the third part CCE3.

[0165] The first cathode electrode CE1 can be electrically connected to the first part CCE1 of the common electrode CCE through the first oxidation protection electrode CRE1 and the first moisture permeation protection electrode MPE1, and the second cathode electrode CE2 can be electrically connected to the second part CCE2 of the common electrode CCE through the second oxidation protection electrode CRE2 and the second moisture permeation protection electrode MPE2.

[0166] According to one embodiment, a first encapsulation layer 171 can completely cover the common electrode CCE, and a second encapsulation layer 173 can flatten the step difference formed by the first encapsulation layer 171. Further redundant descriptions will be omitted.

[0167] Figures 7 to 16 It shows the manufacturing process. Figure 4 A cross-sectional view of the method for forming the display element layer and the thin-film encapsulation layer. The following will describe the formation of... Figure 4 The steps of each layer in the display element layer 150 and the thin film encapsulation layer 170.

[0168] Reference Figure 7 ,exist Figure 4 A plurality of anode electrodes AE are formed on the substrate 110 (specifically, on the thin-film transistor layer 130). The first anode electrode AE1 and the second anode electrode AE2 may be spaced apart from each other in a first direction (X-axis direction). Although not shown in the figures, the thin-film transistor layer 130 may be disposed on the substrate 110, and the structure of the thin-film transistor layer 130 is similar to that of the reference numeral AE. Figure 4 The descriptions have the same structure. Redundant descriptions will be omitted.

[0169] Subsequently, a first light-emitting layer EL1 is formed on the anode electrode AE. The first light-emitting layer EL1 can cover the anode electrode AE ​​and the thin-film transistor layer 130. According to one embodiment, the process for forming the first light-emitting layer EL1 can be performed by a thermal evaporation process. This process can be performed without using a separate mask. Therefore, the first light-emitting layer EL1 can completely cover the anode electrode AE ​​and the thin-film transistor layer 130.

[0170] Next, a first cathode electrode CE1, a first oxide protection electrode CRE1, and a first moisture-permeable protection electrode MPE1 can be sequentially stacked on the first light-emitting layer EL1. According to one embodiment, the process for forming the first cathode electrode CE1, the first oxide protection electrode CRE1, and the first moisture-permeable protection electrode MPE1 can be performed by a sputtering process. This process can be performed without using a separate mask. Therefore, the first cathode electrode CE1 can completely cover the first light-emitting layer EL1, the first oxide protection electrode CRE1 can completely cover the first cathode electrode CE1, and the first moisture-permeable protection electrode MPE1 can completely cover the first oxide protection electrode CRE1.

[0171] Subsequently, referring to Figures 8 to 10 A photoresist PR is formed on the first moisture-permeable protective electrode MPE1, and the photoresist PR is used as a mask to perform a first etching process. The photoresist PR can be positioned at the portion overlapping with the first anode electrode AE1. In this process, a wet etching process and a dry etching process can be performed consecutively as the first etching process.

[0172] First, a wet etching process can be performed as the first etching process. In the wet etching process, a phosphoric acid-based etching solution can be used.

[0173] In this process, the portions of the first cathode electrode CE1 that do not overlap with the photoresist PR, the portions of the first oxide protection electrode CRE1 that do not overlap with the photoresist PR, and the portions of the first moisture-permeable protection electrode MPE1 that do not overlap with the photoresist PR can be removed simultaneously. Therefore, the first cathode electrode CE1, the first oxide protection electrode CRE1, and the first moisture-permeable protection electrode MPE1 can be formed as follows: Figure 9 The form shown is used. In this process, the first light-emitting layer EL1 can be exposed instead of being removed.

[0174] Subsequently, a dry etching process for the first etching process can be performed. This process can be performed in a vacuum chamber. In this process, the photoresist PR and the first luminescent layer EL1 can be removed isotropically simultaneously. In this process, the photoresist PR can be completely removed, and the first luminescent layer EL1 can be retained, while completely covering the first anode electrode AE1 and the second anode electrode AE2.

[0175] Reference Figure 10 A dry ashing process is performed after the first etching process. This process can be performed in the same vacuum chamber as the dry etching process.

[0176] Dry ashing processes can be performed without a separate photoresist PR (see...) Figure 9 The process is performed under the following conditions. As described above, the first moisture-permeable protective electrode MPE1 in one embodiment may include a transparent oxide electrode. Therefore, in this process, the first moisture-permeable protective electrode MPE1 can be used as a hard mask even without a separate photoresist PR.

[0177] In this process, the lower structure overlapping the first moisture-permeable protective electrode MPE1 (e.g., the first oxide protective electrode CRE1, the first cathode electrode CE1, and the first light-emitting layer EL1) can be retained, and the portion of the first light-emitting layer EL1 that does not overlap with the first moisture-permeable protective electrode MPE1 can be removed, thereby forming the first light-emitting layer EL1 as follows: Figure 11 The form shown.

[0178] Through the first etching process and the dry ashing process, the side surface 1c of the first light-emitting layer EL1, the side surface 3c of the first cathode electrode CE1, the side surface 5c of the first oxide protection electrode CRE1, and the side surface 7c of the first moisture-permeable protection electrode MPE1 can have clear cross-sections without mask tails.

[0179] Furthermore, each of the side surface 1c of the first light-emitting layer EL1, the side surface 3c of the first cathode electrode CE1, the side surface 5c of the first oxidation protection electrode CRE1, and the side surface 7c of the first moisture-permeable protection electrode MPE1 may have a high taper angle.

[0180] In some embodiments, the side surface 1c of the first light-emitting layer EL1, the side surface 3c of the first cathode electrode CE1, the side surface 5c of the first oxidation protection electrode CRE1, and the side surface 7c of the first moisture-permeable protection electrode MPE1 can be aligned on the same line, but are not limited thereto.

[0181] Subsequently, referring to Figure 12 The above process is repeated to form a second light-emitting layer EL2, a second cathode electrode CE2, a second oxidation protection electrode CRE2, and a second moisture-permeable protection electrode MPE2 on the second anode electrode AE2. Further details will be omitted.

[0182] In this process, the first light-emitting element ED1, the first oxide protection electrode CRE1, and the first moisture-permeable protection electrode MPE1 can be exposed to wet etching, dry etching, and dry ashing processes. In this case, the first light-emitting element ED1 can be protected by the first oxide protection electrode CRE1 and the first moisture-permeable protection electrode MPE1.

[0183] Reference Figure 13 and Figure 14 A pixel defining layer 151 is formed on the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2. The process of forming the pixel defining layer 151 can be performed by a thin film deposition process, and this process can be performed in a vacuum chamber.

[0184] The pixel defining layer 151 can be formed to completely cover the first light-emitting element ED1, the first oxide protection electrode CRE1, the first moisture-permeable protection electrode MPE1, the second light-emitting element ED2, the second oxide protection electrode CRE2, and the second moisture-permeable protection electrode MPE2. The pixel defining layer 151 can contact the first anode electrode AE1 and the second anode electrode AE2, and can also contact the thin-film transistor layer 130.

[0185] Subsequently, a photoresist PR is formed on the pixel-defining layer 151 at the portion covering the edge of the light-emitting element ED, and a second etching process is performed using the photoresist PR as a mask. As an example, the second etching process can be performed using a dry etching process. This process can be performed in a vacuum chamber.

[0186] In this process, the pixel-defining layer 151 located at the portion where the photoresist PR is not formed can be removed, and the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2 can be exposed.

[0187] In this process, the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2 can be used as hard masks. Therefore, the first light-emitting element ED1, the first cathode electrode CE1, and the first oxide protection electrode CRE1, positioned overlapping with the first moisture-permeable protective electrode MPE1, can be retained without removing them, and the second light-emitting element ED2, the second cathode electrode CE2, and the second oxide protection electrode CRE2, positioned overlapping with the second moisture-permeable protective electrode MPE2, can also be retained without removing them, thereby forming a pixel-defining layer 151 covering the edges of the protective electrodes (e.g., the first moisture-permeable protective electrode MPE1 and the second moisture-permeable protective electrode MPE2). In this process, the pixel-defining layer 151 can be formed as... Figure 14 The form shown.

[0188] Next, refer to Figure 15 A common electrode CCE is formed on the first moisture-permeable protective electrode MPE1, the second moisture-permeable protective electrode MPE2, and the pixel defining layer 151. The process for forming the common electrode CCE can be performed by a sputtering process. This process can be performed in a vacuum chamber.

[0189] In this process, the first moisture-permeable protection electrode MPE1 and the second moisture-permeable protection electrode MPE2 can be in contact with the common electrode CCE, and the first moisture-permeable protection electrode MPE1 and the second moisture-permeable protection electrode MPE2, which are positioned physically spaced apart from each other, can be electrically connected through the common electrode CCE.

[0190] In this process, the first oxidation protection electrode CRE1 and the second oxidation protection electrode CRE2 can protect the first cathode electrode CE1 and the second cathode electrode CE2 from plasma damage caused by sputtering.

[0191] Finally, refer to Figure 16 A first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175 are sequentially stacked on the common electrode CCE, enabling the formation of... Figure 4 The display element layer 150 and the thin film encapsulation layer 170 are shown.

[0192] In a display device 10 according to one embodiment, the light-emitting element ED can be formed by a photopatterning process, enabling a high-resolution display device to be provided. Furthermore, the display device 10 of one embodiment may include an oxide protection electrode CRE and a moisture permeability protection electrode MPE on the cathode electrode CE, thereby solving the problem of damage to the light-emitting element ED caused during the manufacturing process of the display device 10.

[0193] The display device 10 according to one embodiment of the present disclosure can be applied to various electronic devices. An electronic device according to one embodiment of the present disclosure includes the aforementioned display device 10, and in addition to the display device 10, the electronic device may also include modules or devices with additional functions.

[0194] Figure 17 This is a block diagram of an electronic device according to an embodiment of the present disclosure.

[0195] Reference Figure 17 An electronic device 1 according to an embodiment of the present disclosure may include a display module 11, a processor 12, a memory 13 and a power module 14.

[0196] The processor 12 may include at least one of a central processing unit (“CPU”), an application processor (“AP”), a graphics processing unit (“GPU”), a communication processor (“CP”), an image signal processor (“ISP”), and a controller.

[0197] The memory 13 can store the data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application stored in the memory 13, image data signals and / or input control signals are transmitted to the display module 11, and the display module 11 is able to process the received signals and output image information through the display screen.

[0198] The power module 14 may include a power supply module, such as a power adapter or battery, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.

[0199] At least one of the components of an electronic device 1 according to an embodiment of the present disclosure may be included in a display device 10 according to an embodiment of the present disclosure (see [link to relevant documentation]). Figure 1 Furthermore, some modules that are functionally included in a single module may be included in the display device 10, and other modules may be provided separately from the display device 10. For example, the display device 10 may include a display module 11, and the processor 12, memory 13, and power module 14 may be provided in the form of other devices within the electronic device 1 besides the display device 10.

[0200] Figure 18 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure.

[0201] Reference Figure 18 The display device 10 according to an embodiment of the present disclosure (see...) Figure 1 The various electronic devices used can include not only image display electronic devices such as smartphones 10_1a, tablet PCs (personal computers) 10_1b, laptop computers 10_1c, TVs 10_1d, and desktop monitors 10_1e, but also wearable electronic devices including display modules, such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c, as well as vehicle electronic devices 10_3 including display modules, such as central information displays (“CID”) arranged on the dashboard, center console, and instrument panel of a car, and rearview mirror displays.

[0202] Although embodiments of the present disclosure have been described with reference to the accompanying drawings, those skilled in the art will understand that various modifications and alterations can be made without departing from the technical spirit or essential characteristics of the present disclosure. Therefore, it should be understood that the embodiments mentioned above are not limiting in any respect, but rather illustrative.

[0203] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.

[0204] Although the invention has been specifically shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A display device, wherein, The display device includes: The substrate includes luminescent and non-luminescent regions; An anode electrode is positioned on the light-emitting region of the substrate; A light-emitting layer is positioned on the anode electrode; The cathode electrode is positioned on the light-emitting layer; A protective electrode is positioned on the cathode electrode; A pixel defining layer, positioned on the non-light-emitting region of the substrate, and defining an opening in the pixel defining layer; and A common electrode is positioned on the pixel defining layer, and the common electrode contacts the protective electrode at the portion overlapping the opening. The first tilt angle of the side surface of the light-emitting layer facing the non-light-emitting area relative to the upper surface of the anode electrode is 60° to 90°.

2. The display device according to claim 1, wherein, The cathode electrode includes a side surface facing the non-light-emitting region, and The second tilt angle of the side surface of the cathode electrode relative to the upper surface of the light-emitting layer is 60° to 90°.

3. The display device according to claim 2, wherein, The cathode electrode does not cover the side surface of the light-emitting layer.

4. The display device according to claim 1, wherein, The cathode electrode comprises a metal oxide.

5. The display device according to claim 1, wherein, The cathode electrode includes at least one of ytterbium oxide and terbium oxide.

6. The display device according to claim 1, wherein, The thickness of the cathode electrode in the direction perpendicular to the main surface of the substrate is 5 to 15 angstroms.

7. The display device according to claim 2, wherein, The side surface of the light-emitting layer and the side surface of the cathode electrode are aligned on the same line.

8. The display device according to claim 2, wherein, The protective electrode includes an oxidation protective electrode positioned on the cathode electrode, and The oxidation protection electrode comprises an Ag alloy.

9. The display device according to claim 8, wherein, The oxidation protection electrode includes a side surface facing the non-light-emitting region, and The third tilt angle of the side surface of the oxidation protection electrode relative to the upper surface of the cathode electrode is 60° to 90°.

10. The display device according to claim 9, wherein, The oxidation protection electrode does not cover the side surface of the cathode electrode facing the non-light-emitting area.

11. The display device according to claim 10, wherein, The thickness of the oxide protection electrode in the direction perpendicular to the main surface of the substrate is 80 to 150 angstroms.

12. The display device according to claim 9, wherein, The protective electrode also includes a moisture-permeable protective electrode positioned on the oxidation protective electrode, and The moisture-permeable protective electrode includes a transparent oxide electrode.

13. The display device according to claim 12, wherein, The moisture-permeable protective electrode includes a side surface facing the non-light-emitting area, and The fourth tilt angle of the side surface of the moisture-permeable protective electrode relative to the upper surface of the oxidation protective electrode is 60° to 90°.

14. The display device according to claim 13, wherein, The moisture-permeable protective electrode does not cover the side surface of the oxidation protective electrode facing the non-luminescent area.

15. The display device according to claim 13, wherein, The thickness of the moisture-permeable protective electrode in the direction perpendicular to the main surface of the substrate is 70 to 300 angstroms.

16. The display device according to claim 13, wherein, The pixel defining layer is in contact with the side surface of the moisture-permeable protective electrode, the side surface of the oxide protective electrode, the side surface of the cathode electrode, and the side surface of the light-emitting layer, and The pixel-defining layer completely covers the side surface of the moisture-permeable protective electrode, the side surface of the oxidation protective electrode, the side surface of the cathode electrode, and the side surface of the light-emitting layer.

17. A display device, wherein, The display device includes: The substrate includes luminescent and non-luminescent regions; The first anode electrode is positioned on the light-emitting region of the substrate; The first cathode electrode is positioned on the first anode electrode; The first protective electrode is positioned on the first cathode electrode; A pixel defining layer is positioned on the non-light-emitting region of the substrate; The second anode electrode is spaced apart from the first anode electrode, and the pixel defining layer is located between the second anode electrode and the first anode electrode; The second cathode electrode is positioned on the second anode electrode; The second protective electrode is positioned on the second cathode electrode; and A common electrode is positioned on the pixel defining layer and overlaps with the light-emitting region and the non-light-emitting region. The common electrode includes a first portion that contacts the first protective electrode, a second portion that contacts the second protective electrode, and a third portion that contacts the pixel defining layer. The third part is positioned between the first part and the second part, and The first and second portions extend from the third portion.

18. The display device according to claim 17, wherein, The first cathode electrode and the second cathode electrode are spaced apart from each other, and the pixel defining layer is located between the first cathode electrode and the second cathode electrode. The first cathode electrode and the second cathode electrode are electrically connected to each other through the common electrode.

19. The display device according to claim 18, wherein, The first protective electrode includes a first oxidation protection electrode positioned on the first cathode electrode and a first moisture-permeable protection electrode positioned on the first oxidation protection electrode. The second protective electrode includes a second oxidation protection electrode positioned on the second cathode electrode and a second moisture-permeable protection electrode positioned on the second oxidation protection electrode. The first moisture-permeable protective electrode and the second moisture-permeable protective electrode are spaced apart from each other, and the pixel defining layer is located between the first moisture-permeable protective electrode and the second moisture-permeable protective electrode. The first moisture-permeable protection electrode and the second moisture-permeable protection electrode are electrically connected to each other through the common electrode.

20. A method for manufacturing a display device, wherein, The method includes: An anode electrode is formed on a substrate, and a light-emitting layer, a cathode electrode, and a protective electrode are sequentially stacked and formed on the anode electrode. A photoresist is formed on the protective electrode, and then an etching process is performed to simultaneously remove a portion of each of the light-emitting layer, the cathode electrode, and the protective electrode; and A pixel defining layer is formed covering the edge of the protective electrode, and then a common electrode is formed on the pixel defining layer, the common electrode being in contact with the protective electrode and electrically connected to the protective electrode. The inclination angle of the side surface of the light-emitting layer relative to the upper surface of the anode electrode is 60° to 90°.

21. An electronic device, wherein, The electronic device includes: The display device includes: The substrate includes luminescent and non-luminescent regions; An anode electrode is positioned on the light-emitting region of the substrate; A light-emitting layer is positioned on the anode electrode; The cathode electrode is positioned on the light-emitting layer; A protective electrode is positioned on the cathode electrode; A pixel defining layer, positioned on the non-light-emitting region of the substrate, and defining an opening in the pixel defining layer; and A common electrode is positioned on the pixel defining layer, and the common electrode contacts the protective electrode at the portion overlapping the opening. The first tilt angle of the side surface of the light-emitting layer facing the non-light-emitting area relative to the upper surface of the anode electrode is 60° to 90°.

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