IGBT (Insulated Gate Bipolar Translator) test method and system, electronic equipment and storage medium

Abstract

The embodiment of the invention provides an IGBT test method and system, electronic equipment and a storage medium, and relates to the technical field of equipment test.The method comprises the steps that in response to a test instruction for an IGBT, test parameters corresponding to the test instruction are determined; controlling each test parameter simulation structure to simulate the test parameters; and testing the IGBT according to the test parameters to obtain a test result of the IGBT so as to construct a plurality of test parameter simulation structures, so that different test scenes can be created for the IGBT in the test process, the IGBT is fully and comprehensively tested, the shortages and defects of the IGBT at an application end are effectively tested, and the test efficiency of the IGBT is improved. Therefore, corresponding countermeasures are provided for problems found in the testing process, and the operation stability of the IGBT on the application end is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of device testing, in particular to an IGBT testing method, an IGBT testing system, an electronic device and a computer readable storage medium. BACKGROUND

[0002] IGBT (Insulated Gate Bipolar Transistor) is a new type of power device, which is widely used in household appliances, new energy and other fields. In particular, it is particularly important in PFC (Power Factor Correction) module circuit applications. The performance of IGBT directly determines the quality of the product. In the process of testing IGBT, the shortcomings and deficiencies of the device at the application end cannot be fully exposed, and the shortcomings cannot be discovered in advance and prepared for countermeasures, thereby affecting the application of IGBT in actual application scenarios. SUMMARY

[0003] The embodiments of the present application provide an IGBT testing method, system, electronic device and computer readable storage medium to solve or partially solve the problem that the shortcomings and deficiencies of the device at the application end cannot be fully exposed in the process of testing IGBT, and the shortcomings cannot be discovered in advance and prepared for countermeasures.

[0004] The embodiments of the present application disclose an IGBT testing method applied to a testing system, wherein the testing system comprises at least a plurality of different test parameter simulation structures and an IGBT; wherein the method comprises:

[0005] In response to a test instruction for the IGBT, determining a test parameter corresponding to the test instruction;

[0006] Controlling each test parameter simulation structure to simulate the test parameter;

[0007] Testing the IGBT according to the test parameter to obtain a test result of the IGBT.

[0008] In some feasible implementation manners, the controlling each test parameter simulation structure to simulate the test parameter comprises:

[0009] Determining a test period corresponding to the test parameter;

[0010] Controlling each test parameter simulation structure to simulate the corresponding test parameter within the test period.

[0011] In some possible implementation manners, the test parameter simulation structure at least includes an interference signal generator, and the test parameter at least includes an interference signal; and the controlling each test parameter simulation structure to simulate the test parameter comprises:

[0012] controlling the interference signal generator to generate the interference signal.

[0013] In some possible implementation manners, the test system further comprises a power conversion structure connected with the interference signal generator, and the method further comprises:

[0014] superimposing the interference signal on an alternating voltage input into the test system to obtain an interference voltage;

[0015] controlling the power conversion structure to convert the interference voltage into a direct current voltage.

[0016] In some possible implementation manners, the test system further comprises a power adjustment structure connected with the power conversion structure, and the method further comprises:

[0017] controlling the power adjustment structure to boost the direct current voltage to obtain a test voltage for the IGBT.

[0018] In some possible implementation manners, the test parameter simulation structure at least includes a temperature control structure, and the test parameter at least includes a test temperature; and the controlling each test parameter simulation structure to simulate the test parameter comprises:

[0019] controlling the temperature control structure to heat the IGBT according to the test temperature.

[0020] In some possible implementation manners, the test parameter simulation structure at least includes an analog load, and the test parameter at least includes a load current; and the controlling each test parameter simulation structure to simulate the test parameter comprises:

[0021] controlling the analog load to output the load current.

[0022] The embodiment of the present application further discloses an IGBT test system, which comprises at least a plurality of different test parameter simulation structures, an IGBT and a master control.

[0023] The master control is configured to determine a test parameter corresponding to a test instruction for the IGBT in response to the test instruction.

[0024] The test parameter simulation structure is configured to simulate the test parameter.

[0025] The IGBT is used for testing according to the test parameter, and a test result of the IGBT is obtained.

[0026] In some possible implementation manners, the test parameter simulation structure is specifically used for:

[0027] determining a test period corresponding to the test parameter;

[0028] controlling the test parameter simulation structure to simulate the corresponding test parameter in the test period.

[0029] In some possible implementation manners, the test parameter simulation structure at least includes an interference signal generator, and the test parameter at least includes an interference signal; wherein,

[0030] The interference signal generator is configured to generate the interference signal.

[0031] In some possible implementation manners, the test system further includes a power conversion structure connected to the interference signal generator; wherein,

[0032] The interference signal generator is configured to superimpose the interference signal on an alternating voltage input into the test system to obtain an interference voltage.

[0033] The power conversion structure is configured to convert the interference voltage into a direct-current voltage.

[0034] In some possible implementation manners, the test system further includes a power adjustment structure connected to the power conversion structure; wherein,

[0035] The power adjustment structure is configured to boost the direct-current voltage to obtain a test voltage for the IGBT.

[0036] In some possible implementation manners, the test parameter simulation structure at least includes a temperature control structure, and the test parameter at least includes a test temperature; wherein,

[0037] The temperature control structure is configured to heat the IGBT according to the test temperature.

[0038] In some possible implementation manners, the test parameter simulation structure at least includes a simulation load, and the test parameter at least includes a load current; wherein,

[0039] The simulation load is configured to output the load current.

[0040] The electronic device includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory complete communication with each other through the communication bus.

[0041] The memory is configured to store a computer program.

[0042] The processor is configured to execute the program stored in the memory to implement the method according to the embodiments of the present application.

[0043] The embodiments of the present application also disclose a computer readable storage medium having instructions stored thereon, which, when executed by one or more processors, cause the processors to perform the method according to the embodiments of the present application.

[0044] The embodiments of the present application have the following advantages:

[0045] In the embodiments of the present application, the test system applied to test the IGBT can include a plurality of different test parameter simulation structures and the IGBT to be tested, and in the test process, the test system can determine the test parameters corresponding to the test instruction for the IGBT in response to the test instruction for the IGBT, then control the test parameter simulation structures to simulate the test parameters, and then test the IGBT according to the test parameters to obtain the test result of the IGBT. By constructing a plurality of test parameter simulation structures, different test scenarios can be created for the IGBT in the test process, and the IGBT can be fully and comprehensively tested, and the short board and deficiency of the IGBT in the application end can be effectively tested, so that corresponding measures can be provided according to the problems found in the test process to ensure the running stability of the IGBT in the application end. BRIEF DESCRIPTION OF DRAWINGS

[0046] Figure 1 is a step flow chart of the test method of the IGBT provided in the embodiments of the present application;

[0047] Figure 2 is a principle schematic diagram of the performance test provided in the embodiments of the present application. DETAILED DESCRIPTION

[0048] In order to make the above objectives, characteristics and advantages of the present application more apparent and easy to understand, the present application is further described in detail below with reference to the drawings and specific embodiments.

[0049] As an example, in the related reliability test process of the IGBT, the short board and deficiency of the device in the application end cannot be fully exposed, so that the user is difficult to find the short board of the IGBT in advance and prepare corresponding measures, thereby causing great instability of the IGBT in the application end.

[0050] To this end, in the present application, by constructing a corresponding test system, the test system can include several different test parameter simulation structures and the IGBT to be tested, and in the test process, the test system can determine the test parameters corresponding to the test instructions for the IGBT in response to the test instructions for the IGBT, then control each test parameter simulation structure to simulate the test parameters, and then test the IGBT according to the test parameters to obtain the test results of the IGBT. By constructing multiple test parameter simulation structures, different test scenarios can be created for the IGBT in the test process, and the IGBT can be fully and comprehensively tested, and the weaknesses and deficiencies of the IGBT in the application end can be effectively tested, so as to provide corresponding measures in response to the problems found in the test process, so as to ensure the running stability of the IGBT in the application end.

[0051] With reference to Figure 1 , a step flow chart of an IGBT test method provided in an embodiment of the present application is shown, which is applied to a test system, and the test system at least includes several different test parameter simulation structures and an IGBT, and can include the following steps:

[0052] Step 101, in response to a test instruction for the IGBT, determine the test parameters corresponding to the test instruction;

[0053] For the test parameter simulation structure in the test system, it can be used to simulate different application scenarios, so as to fully test the possible problems of the device in the application end and the after-sales end in combination with the actual application scenario of the IGBT, so as to ensure the stability of the device running, and further ensure the running stability of the application end.

[0054] For the test parameter simulation structure, it can at least include an interference signal generator, a temperature control structure and a simulation load. The interference signal generator can be used to simulate the electrical interference in the real working environment, the temperature control structure can be used to simulate the temperature change in the real working environment, and the simulation load can be used to simulate the load change in the real working environment.

[0055] For example, for the interference signal generator, it can simulate electromagnetic interference (EMI) in the power grid or industrial environment, voltage fluctuation, high-frequency noise, etc., test the stability of the IGBT under harsh electrical conditions, and verify the anti-interference ability of the IGBT (such as voltage spike in switching process, parasitic oscillation) etc., such as pulse noise generator, which generates high-frequency transient pulse through fast switching, simulates voltage spike when lightning strikes or inductive load is disconnected, etc., such as harmonic injection circuit, which uses a signal generator to superimpose 50Hz fundamental wave and high-frequency harmonic wave (such as 5kHz-1MHz, etc.), simulates power grid harmonic interference, etc.

[0056] For the temperature control structure, it can simulate the working state of IGBT at different temperatures (-40℃-150℃, etc.), test its high-temperature conduction characteristics, low-temperature starting performance and thermal stability, and monitor the matching of IGBT junction temperature and heat dissipation design (such as thermal resistance Rth) and the like. For example, the PID (Proportional-Integral-Derivative, proportional-integral-derivative (control)) temperature control system, in the process of heating, the heating of IGBT can be realized by ceramic heating sheet (such as 100W / 24V)+thermocouple (K type)+PID controller (such as Omron E5CS, etc.) and the like, and in the cooling process, the cooling process of IGBT can be realized by air cooling (heat dissipation fan) or liquid cooling (circulating water cooling machine) and the like.

[0057] Optionally, for the temperature control structure, it can at least include a temperature heating plate RT (Heating Plate with RT (Resistance Temperature) Control), a temperature detection sensor R (Resistance Temperature Detector (RTD)), a power control module PC (Power Control Module), a direct current power supply DC (Direct Current Power Supply) and the like, and the temperature is controlled accurately by the host control in the test system. In addition, the temperature heating plate is to be attached to the back of the IGBT to be tested, so as to ensure that the heat can be fully conducted to the IGBT, and the accuracy of the test is improved.

[0058] For the simulation load, it can simulate the load conditions of IGBT in actual application (such as motor, inverter), test its load capacity, switching loss and dynamic response, and simulate complex working conditions such as step change and nonlinear load through programmable load. For example, electronic load (constant current / constant resistance mode), through high-power MOSFET+op-amp control (such as IRFP4668+LT1010), 0-100A adjustable is realized, or commercial electronic load (such as Chroma63804, 600V / 120A) is used; for example, inductive load simulation, through inductor (such as 10mH / 50A)+freewheeling diode (such as STTH6006D), the back electromotive force during motor start-stop is simulated.

[0059] By constructing various test parameter simulation structures in the test system, the IGBT can be comprehensively tested, and the performance of the IGBT in different application scenarios can be fully tested, so as to find out the shortcomings and deficiencies of the IGBT.

[0060] In addition, for the test system, it can be an IGBT test system with a PFC circuit, or it can be an actual electrical product, such as a household air conditioner, a refrigerator and the like, and the present application does not limit this.

[0061] In the process of performing reliability test on IGBT of a test system (system described below), a user can input corresponding test operation through an interactive interface provided by the test system, the system generates corresponding test instruction based on the test operation, and determines test parameters corresponding to the test instruction, so as to control each test parameter simulation structure to simulate corresponding test parameters, and perform reliability test on the IGBT.

[0062] For example, the user can set interference signal, test temperature, load current and the like of the IGBT in the interactive interface, and construct actual working scene of the IGBT, so as to test performance and stability of the IGBT in different working scenes.

[0063] Step 102, control each test parameter simulation structure to simulate the test parameters;

[0064] When the system determines the test parameters of the IGBT, each test parameter simulation structure can be controlled to simulate corresponding test parameters, so as to perform reliability test on the IGBT based on the simulated test parameters.

[0065] In some possible implementation manners, in the process of simulating test parameters, test period corresponding to the test parameters can also be determined, and each test parameter simulation structure can be controlled to simulate corresponding test parameters within the test period. In a specific implementation, the user can set fixed and unchanged first test parameters corresponding to each test period, and dynamically set second test parameters of other dimensions, such as fixing test temperature and dynamically adjusting interference signal and load current in test period T1; fixing interference signal and dynamically adjusting test temperature and load current in test period T2; fixing load current and dynamically adjusting test temperature and interference signal in test period T3; and fixing parameters of multiple dimensions and adjusting test parameters of a single dimension, and the like, which are not limited by the present application.

[0066] Optionally, in order to improve rationality and effectiveness of the test, a corresponding test period can be set for test parameters of a single dimension, within the test period, test parameters of the target dimension can be kept unchanged, and test parameters of other dimensions can be adjusted, to realize accurate isolation of variables, improve test precision, and reduce the number of repeated tests by controlling parameters of different dimensions in time division, to ensure comparability of each group of data, improve test efficiency and consistency, and also simulate part of steady state and part of transient working conditions in real scenes by dynamically adjusting other parameters under the condition of stability of a single dimension, to fully simulate complex working conditions.

[0067] In some possible implementation manners, the test parameter simulation structure at least includes the interference signal generator, the temperature control structure, and the simulation load, etc. as in the above embodiment. The system can control the interference signal generator to generate the interference signal, control the temperature control structure to heat the IGBT according to the test temperature, and control the simulation load to output the load current, etc. so as to simulate the corresponding test parameters by controlling each test parameter simulation structure, construct different real working scenes, and comprehensively test the IGBT, fully test the performance of the IGBT in different application scenes, so as to find out the shortcomings and deficiencies of the IGBT.

[0068] Optionally, the test system can further include a power conversion structure connected with the interference signal generator and a power adjustment structure. The power conversion structure can be used for converting the voltage, and the power adjustment structure can be used for power factor correction and voltage boosting, etc. After the interference signal generator generates the corresponding interference signal, the system can superimpose the interference signal on the alternating voltage input into the test system to obtain the interference voltage, then control the power conversion structure to convert the interference voltage into direct current voltage, and then control the power adjustment structure to boost the direct current voltage to obtain the test voltage for the IGBT. Thus, by voltage conversion, a coupled power supply can be output for testing the IGBT, and by boosting, the input current waveform is controlled to follow the grid voltage waveform, so that the power supply presents resistance, improves the reality of the simulated working scene, and further improves the effectiveness and accuracy of the test.

[0069] The input voltage of the test system can be an alternating voltage, such as a voltage of 220V. The power conversion structure can convert the alternating voltage into direct current voltage. When the input alternating voltage is added with the interference signal, the power conversion structure can convert the coupled voltage into the corresponding direct current voltage. Optionally, the power conversion structure can at least include an alternating power supply, a rectifier bridge, and a filter capacitor, etc. The alternating power supply is used for inputting the alternating voltage. The rectifier bridge can be used for converting the voltage form (such as converting the alternating voltage into direct current voltage, etc.). The filter capacitor is used for smoothing filtering the rectified voltage to provide a stable direct current voltage output.

[0070] In addition, for the power adjustment structure, it can be used for simulating the actual working scene of the IGBT (such as being applied to the switch control of the PFC circuit of the air conditioner outdoor unit), which can include a boost inductor L1, a diode D1, a filter capacitor C2, a current detection resistor RS, a measured IGBT and an IGBT drive module and the like, wherein the boost inductor L1 can be used for storing energy in the PFC (power factor correction) or Boost voltage-boosting circuit, realizing energy transmission through the switch control of the IGBT, and inhibiting current mutation and smoothing the input current waveform (reducing harmonics); the diode D1 can be used for preventing reverse current, ensuring one-way flow of energy (such as the freewheeling diode in the Boost circuit), and providing a freewheeling path for the inductor current when the IGBT is turned off; the filter capacitor C2 can be used for stabilizing the DC bus voltage, inhibiting high-frequency switching noise, and providing transient energy support to cope with load mutation; the current detection resistor RS can be used for monitoring the collector current (Ic) of the IGBT in real time by measuring the voltage drop (V=IR), and for overcurrent protection, current closed-loop control and the like; and the measured IGBT as the core switching device is turned on and off through the drive signal control circuit and the like, accordingly, the IGBT drive module can be used for providing sufficient gate drive voltage (such as +15V / -8V), ensuring fast switching of the IGBT, and isolating the control signal from the power circuit (optocoupler or transformer isolation) and the like, which is not limited by the application.

[0071] In the corresponding test process, the alternating current is converted into pulsating direct current through the rectifier bridge, input to the boost inductor L1, then in the conduction stage: the IGBT is turned on, the current flows through the boost inductor L1 to store energy, and the diode D1 is turned off, accordingly, in the turn-off stage: the IGBT is turned off, the energy is released to the filter capacitor C2 and the load through D1, at the same time, the RS detects the current signal, which is fed back to the controller (such as MCU), to adjust the PWM duty cycle, and finally the capacitor C2 smooths the output voltage, which is used for subsequent circuit (such as inverter) and the like.

[0072] In some examples, assuming that the test system is a refrigerator test system, it can include the following modules:

[0073] (1) Temperature control structure: including a programmable environmental test chamber (-40℃~85℃) and multiple point temperature sensors in the chamber;

[0074] (2) Load simulation: variable frequency compressor simulator (0.5~3HP adjustable), fan load simulation device;

[0075] (3) Disturbance signal generator: power grid fluctuation generator (±20% voltage fluctuation), EMC interference source;

[0076] (4) Main control system: industrial PC + PLC, running LabVIEW test program;

[0077] (5) Data collection: power analyzer (0.5% accuracy), temperature recorder (±0.1℃).

[0078] According to the above corresponding modules, the user can set different test scenarios, such as load change test at constant temperature, by setting the environmental test chamber to 25℃ constant temperature and setting the compressor load to gradually increase from 50% to 120% rated power (each time by 10% or the like); or performance test under power grid interference, which can maintain the environmental temperature at 32℃, and simulate power grid fluctuations by setting corresponding interference signals, including setting voltage drop (220V→180V, lasting 5s) related interference signals, and setting high-frequency harmonic injection (2kHz, 10% amplitude) and the like, so as to build a variety of test parameter simulation structures, so that different test scenarios can be created for the IGBT during the test process, and the IGBT can be fully and comprehensively tested, and the short board and deficiency of the IGBT at the application end can be effectively tested, so as to provide corresponding countermeasures for the problems found in the test process, so as to ensure the running stability of the IGBT at the application end.

[0079] Step 103, testing the IGBT according to the test parameters to obtain the test result of the IGBT.

[0080] When the corresponding test parameters are set, the system can test the IGBT according to the corresponding test parameters to obtain the corresponding test result, so as to build a variety of test parameter simulation structures, so that different test scenarios can be created for the IGBT during the test process, and the IGBT can be fully and comprehensively tested, and the short board and deficiency of the IGBT at the application end can be effectively tested, so as to provide corresponding countermeasures for the problems found in the test process, so as to ensure the running stability of the IGBT at the application end.

[0081] It should be noted that the embodiments of the present application include but are not limited to the above examples, and it can be understood that those skilled in the art can set according to actual needs under the guidance of the idea of the embodiments of the present application, and the present application does not limit this.

[0082] In this embodiment of the invention, a test system for testing IGBTs includes several different test parameter simulation structures and the IGBTs to be tested. During the test, the test system responds to test commands for the IGBT, determines the test parameters corresponding to the test commands, controls each test parameter simulation structure to simulate the test parameters, and then tests the IGBT according to the test parameters to obtain the IGBT test results. By constructing multiple test parameter simulation structures, different test scenarios can be created for the IGBT during the test process, allowing for a thorough and comprehensive test of the IGBT. This effectively identifies the shortcomings and deficiencies of the IGBT in the application, enabling corresponding countermeasures to be provided for the problems found during the test, thereby ensuring the operational stability of the IGBT in the application.

[0083] To enable those skilled in the art to better understand the technical solutions in the embodiments of the present invention, the following examples are provided for illustrative purposes:

[0084] As an example, refer to Figure 2 This diagram illustrates the principle of performance testing provided in an embodiment of the present invention. The testing system may include at least a surge testing device, a rectifier module, a PFC module, a temperature control and heating module, a simulated load, and a main controller. Wherein:

[0085] Surge testing equipment: used to provide interference signals to the test system. The two ends of the test equipment are connected in parallel with the two ends of the 220V AC power supply to superimpose the interference signal onto the AC power supply.

[0086] Rectifier module: Used to convert AC power into DC voltage, including three parts: AC power supply, rectifier bridge and filter capacitor C1.

[0087] PFC module: Used for power factor correction and voltage boost. In this test system, it is used to simulate the actual working scenario of IGBT. It includes boost inductor L1, diode D1, filter capacitor C2, current sensing resistor RS, IGBT under test and IGBT driver module.

[0088] Temperature control heating module: Used to heat the IGBT under test in the test system to simulate its working environment at different temperatures. It includes a temperature heating plate RT, a temperature detection sensor R, a power control module PC, and a DC power supply DC. The temperature can be precisely controlled by the main controller. The temperature heating plate must be in contact with the back of the IGBT under test.

[0089] Simulated load: As a load simulation unit for the system under test, it is used to simulate and test the system's anti-interference capability under loads of different power levels.

[0090] Master control: control of IGBT drive for PFC module, heating power control and temperature detection of temperature control heating module, test parameter setting of the whole test system, including test temperature, test frequency, test power and other parameter setting and adjustment, master control module includes master control unit and touch screen for man-machine interaction and test parameter input adjustment.

[0091] Through the test system, the anti-interference ability evaluation of IGBT of PFC circuit under different temperatures, different working loads and different frequencies can be realized to provide reference evaluation for actual application and after-sales performance.

[0092] For example, assuming IGBT for air conditioner and refrigerator, the test system at least contains the following modules:

[0093] Interference signal generator: simulate power grid fluctuation, EMI noise, etc.

[0094] Temperature control structure: simulate high / low temperature working environment (-40℃~150℃).

[0095] Simulated load: simulate compressor or fan load (0.5~3HP adjustable).

[0096] Power conversion structure: rectifier bridge + filter capacitor, provide stable DC voltage.

[0097] Power adjustment structure: Boost PFC circuit (including boost inductor, IGBT, diode, etc.).

[0098] During the test of IGBT for air conditioner, assuming that the test scene is IGBT in PFC circuit of variable frequency air conditioner outdoor unit, and the test target is to verify its reliability under high temperature and power grid interference, the user can set the corresponding test parameters as follows:

[0099] Temperature: 85℃ (simulate summer high temperature environment).

[0100] Interference signal: ±20% voltage fluctuation (simulate unstable power grid).

[0101] Load current: 15A (corresponding to 1.5HP compressor full load).

[0102] Based on the set test parameters, the system can perform the following test process:

[0103] Step 1: The temperature control structure is heated to 85℃ and stabilized.

[0104] Step 2: Interference signal is superimposed on AC input (220V±44V, 50Hz).

[0105] Step 3: Simulated load is gradually increased to 15A and runs for 24 hours.

[0106] During the test process, the system can detect the corresponding parameters, including monitoring the change of the on-state voltage drop (Vce(sat)) of the IGBT, the drift of the switching loss (Eon / Eoff) with temperature rise, and whether the gate drive waveform is abnormal (such as oscillation), while making aging determination, such as Vce(sat) exceeding the specification value (such as 2.5V) or drive failure, which is determined as unqualified, etc., so as to fully and comprehensively test the IGBT, and test the short board and deficiency of the IGBT at the application end.

[0107] Based on the above test parameters, the test data obtained by the test process can be shown in Table 1 as follows:

[0108] Time (h) Temperature (°C) Vce(sat) (V) Switching loss (mJ) Status 0 25 1.8 1.2 Normal 12 85 2.1 1.5 Normal 24 85 2.7 2.0 Failure (out of specification)

[0109] Table 1

[0110] During the test process of the IGBT of the refrigerator, assuming that the test scene is the IGBT in the variable frequency compressor driving module of the refrigerator, and the test target is to verify its performance at low temperature start and load mutation, the user can set the following test parameters:

[0111] Temperature: -20℃ (simulating winter environment).

[0112] Load mutation: 0.5A→5A step (simulating the starting current of the compressor).

[0113] Interference signal: 10kHz high frequency noise (simulating interference of other household appliances).

[0114] Based on the set test parameters, the system can perform the following test process:

[0115] Step 1: The temperature control structure is cooled to -20℃ and stabilized.

[0116] Step 2: Simulate the load to jump from 0.5A to 5A in 1 second, repeat 1000 times.

[0117] Step 3: Inject 10kHz / 5V noise for 30 minutes.

[0118] During the test process, the system can monitor the corresponding parameters, including the low temperature start characteristics of the IGBT (such as the change of the gate threshold voltage Vge(th)), the voltage spike when the load mutates (the oscilloscope captures the Vce waveform), and the junction temperature recovery speed (monitored by a thermal imager), while making failure determination, such as start delay >10μs or voltage spike >600V, which is determined as unqualified, etc., so as to fully and comprehensively test the IGBT, and test the short board and deficiency of the IGBT at the application end.

[0119] Based on the above test parameters, the test data obtained by the test process can be shown in Table 2 as follows:

[0120] Test cycle number Minimum start-up temperature (°C) Maximum voltage spike (V) Result 1～100 -20 550 Pass 101～500 -20 580 Pass 501～1000 -20 620 Failure (out of specification)

[0121] Table 2

[0122] In the above process, by constructing a plurality of test parameter simulation structures, different test scenarios can be created for the IGBT during the test process, so that the IGBT can be fully and comprehensively tested, and the shortcomings and deficiencies of the IGBT in the application end can be effectively tested, so as to provide corresponding measures in response to the problems found in the test process, so as to ensure the running stability of the IGBT in the application end.

[0123] It should be noted that, for the method embodiments, in order to simply describe, they are all described as a series of action combinations, but those skilled in the art should know that the embodiments of the present application are not limited by the order of the described actions, because according to the embodiments of the present application, certain steps can be performed in other order or simultaneously. Secondly, those skilled in the art should know that the embodiments described in the specification all belong to preferred embodiments, and the actions involved are not necessarily necessary for the embodiments of the present application.

[0124] The embodiments of the present application also provide a test system, the test system at least includes a plurality of different test parameter simulation structures, an IGBT and a master control; wherein,

[0125] The master control is used for determining a test parameter corresponding to a test instruction for the IGBT in response to the test instruction.

[0126] The test parameter simulation structure is used for simulating the test parameter.

[0127] The IGBT is used for testing according to the test parameter to obtain a test result of the IGBT.

[0128] In some feasible implementation manners, the test parameter simulation structure is specifically used for:

[0129] Determining a test period corresponding to the test parameter.

[0130] Controlling each test parameter simulation structure to simulate the corresponding test parameter within the test period.

[0131] In some feasible implementation manners, the test parameter simulation structure at least includes an interference signal generator, and the test parameter at least includes an interference signal; wherein,

[0132] The interference signal generator is used for generating the interference signal.

[0133] In some possible implementation manners, the test system further comprises a power conversion structure connected with the interference signal generator; wherein,

[0134] The interference signal generator is configured to superimpose the interference signal on an alternating voltage input into the test system to obtain an interference voltage.

[0135] The power conversion structure is configured to convert the interference voltage into a direct current voltage.

[0136] In some possible implementation manners, the test system further comprises a power adjustment structure connected with the power conversion structure; wherein,

[0137] The power adjustment structure is configured to boost the direct current voltage to obtain a test voltage for the IGBT.

[0138] In some possible implementation manners, the test parameter simulation structure at least comprises a temperature control structure, and the test parameter at least comprises a test temperature; wherein,

[0139] The temperature control structure is configured to heat the IGBT according to the test temperature.

[0140] In some possible implementation manners, the test parameter simulation structure at least comprises a simulation load, and the test parameter at least comprises a load current; wherein,

[0141] The simulation load is configured to output the load current.

[0142] For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the related parts refer to the part of the method embodiment.

[0143] In addition, the embodiment of the present application further provides an electronic device, which comprises a processor, a memory, and a computer program stored in the memory and executable on the processor, wherein the computer program is executed by the processor to implement each process of the above-mentioned IGBT test method embodiment and achieve the same technical effects. To avoid repetition, no further description is given here.

[0144] The embodiment of the present application further provides a computer readable storage medium, and the computer readable storage medium stores a computer program, wherein the computer program is executed by the processor to implement each process of the above-mentioned IGBT test method embodiment and achieve the same technical effects. To avoid repetition, no further description is given here. The computer readable storage medium is, for example, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0145] The various embodiments described in this specification are presented as examples. Each example is provided by way of explanation of the other examples. Thus, each of the various embodiments can be implemented alone or in combination with any of the other embodiments. Each embodiment is presented in the context of the general inventive concept, which will be apparent to those skilled in the art, from the description and drawings.

[0146] Those skilled in the art will appreciate that embodiments of the present application can be provided as methods, apparatus, or computer program products. Accordingly, embodiments of the present application can be embodied in the form of entire hardware embodiments, entire software embodiments, or embodiments combining software and hardware aspects. Furthermore, embodiments of the present application can be embodied in the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk memory, CD-ROMs, optical memory, EEPROM, Flash, eMMC, and the like) having computer usable program code embodied thereon.

[0147] Embodiments of the present application are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to embodiments of the present application. It will be understood that each flow and / or block of the flowcharts and / or block diagrams, and combinations of flows and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general purpose computer, special purpose computer, embedded processing device, or other programmable data processing terminal devices to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal devices, create means for implementing the functions specified in the flowcharts and / or block diagrams block or blocks. Figure 1 one or more flows and / or blocks Figure 1 an apparatus to perform the functions specified in the flowchart

[0148] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal devices to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions means which implement the function specified in the flowcharts and / or block diagrams block or blocks. Figure 1 one or more flows and / or blocks Figure 1 an apparatus to perform the functions specified in the flowchart

[0149] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal devices, such that a series of operational steps are performed on the computer or other programmable terminal devices to create a computer implemented process so that the instructions executed on the computer or other programmable terminal devices provide steps for implementing the functions specified in the flowcharts and / or block diagrams block or blocks. Figure 1 one or more flows and / or blocks Figure 1 an apparatus to perform the functions specified in the flowchart

[0150] While the preferred embodiments of the application have been described above, it should be understood that many modifications and variations to these embodiments will be apparent to those skilled in the art once they learn of the basic inventive concepts. Therefore, the attached claims are intended to cover all such modifications and variations.

[0151] Finally, it is to be understood that the phraseology or terminology employed herein, such as "first" and "second", etc., are for descriptive purposes only and should not be construed to imply or incorporate any kind of ordering, unless and except for the order of method steps or process steps as expressly set forth in the claims. Moreover, the use of the terms "including", "comprising", or "having" and variations thereof herein is only to specify the presence of stated features, steps, actions, elements, or components, but does not preclude the presence or addition of one or more other features, steps, actions, elements, components, or groups thereof.

[0152] The above describes in detail the test method of an IGBT and the test system of an IGBT provided by the application, and the principles and implementation manners of the application are described by using specific examples in the present text. The above description of the embodiments is only for helping to understand the method of the application and its core idea; meanwhile, for those skilled in the art, according to the idea of the application, there will be changes in the specific implementation manners and application ranges; and in view of the above, the content of the present description should not be understood as a limitation on the application.

Claims

1. A testing method for IGBTs, characterized in that, The method is applied to a test system, which includes at least several different test parameter simulation structures and IGBTs; wherein the method includes: In response to a test command for the IGBT, determine the test parameters corresponding to the test command; The simulation structure controls each of the test parameters to simulate the test parameters; The IGBT is tested according to the test parameters to obtain the test results of the IGBT.

2. The method according to claim 1, characterized in that, The simulation structure that controls each of the test parameters simulates the test parameters, including: Determine the test cycle corresponding to the test parameters; The simulation structure controls each of the test parameters to simulate the corresponding test parameters within the test cycle.

3. The method according to claim 1, characterized in that, The test parameter simulation structure includes at least an interference signal generator, the test parameters include at least an interference signal, and controlling each of the test parameter simulation structures to simulate the test parameters includes: The interference signal generator is controlled to generate the interference signal.

4. The method according to claim 3, characterized in that, The test system further includes a power conversion structure connected to the interference signal generator, and the method further includes: The interference signal is superimposed onto the AC voltage input to the test system to obtain the interference voltage; The power conversion structure is controlled to convert the interference voltage into a DC voltage.

5. The method according to claim 4, characterized in that, The test system further includes a power adjustment structure connected to the power conversion structure, and the method further includes: The power adjustment structure is controlled to boost the DC voltage to obtain a test voltage for the IGBT.

6. The method according to claim 1, characterized in that, The test parameter simulation structure includes at least a temperature control structure, the test parameters include at least a test temperature, and the control of each of the test parameter simulation structures to simulate the test parameters includes: The temperature control structure is controlled to heat the IGBT according to the test temperature.

7. The method according to claim 1, characterized in that, The test parameter simulation structure includes at least a simulated load, and the test parameters include at least a load current. Controlling each of the test parameter simulation structures to simulate the test parameters includes: Control the simulated load to output the load current.

8. A testing system for IGBTs, characterized in that, The test system includes at least several different test parameter simulation structures, IGBTs, and a main controller; among which... The main controller is used to respond to a test command for the IGBT and determine the test parameters corresponding to the test command. The test parameter simulation structure is used to simulate the test parameters; The IGBT is used to perform tests according to the test parameters to obtain the test results of the IGBT.

9. An electronic device, characterized in that, It includes a processor, a communication interface, a memory, and a communication bus, wherein the processor, the communication interface, and the memory communicate with each other through the communication bus; The memory is used to store computer programs; When the processor executes a program stored in the memory, it implements the method as described in any one of claims 1-7.

10. A computer-readable storage medium having instructions stored thereon that, when executed by one or more processors, cause the processors to perform the method as described in any one of claims 1-7.

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