Silicon-based OLED packaging structure, manufacturing method and display panel

Abstract

The invention discloses a silicon-based OLED (Organic Light Emitting Diode) packaging structure, a manufacturing method and a display panel. The silicon-based OLED packaging structure comprises a plurality of display areas and partition areas arranged among the display areas, the silicon-based OLED packaging structure further comprises a silicon-based substrate, a first substrate and a second substrate, the OLED device is arranged on the silicon-based substrate; the packaging layer is arranged on one side, far away from the silicon-based substrate, of the OLED device; the encapsulation layer at least comprises a first organic layer; in the direction perpendicular to the silicon-based substrate, the projection of the first organic layer is not overlapped with the segmentation area. According to the technical scheme provided by the invention, the edge packaging effect of the display device is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon-based display, in particular to a silicon-based OLED packaging structure, a manufacturing method thereof and a display panel. BACKGROUND

[0002] Silicon-based organic light emitting panel (Organic Light Emitting Display, OLED) is known as the dark horse of the next generation display technology. It is different from the conventional OLED device with glass or polyimide as the substrate. It is an organic light emitting diode display device with silicon as the substrate. The pixel size is 1 / 10 of the traditional display device, and the fineness is much higher than that of the traditional device, with many advantages such as high resolution, high integration, low power consumption, small size, light weight, etc.

[0003] In the preparation process of the silicon-based OLED, in order to prevent oxygen or water vapor from entering the internal components, an organic film and an inorganic film are encapsulated on the surface of the cathode to achieve the water vapor barrier effect. However, during cutting, the cutting edge cracks are easily expanded, resulting in packaging failure. SUMMARY

[0004] The embodiments of the present application provide a silicon-based OLED packaging structure, a manufacturing method thereof and a display panel to improve the edge packaging effect of the display device.

[0005] In a first aspect, the embodiments of the present application provide a silicon-based OLED packaging structure, comprising: a plurality of display areas and a partition area arranged between the display areas;

[0006] The silicon-based OLED packaging structure further comprises a silicon-based substrate.

[0007] An OLED device is arranged on the silicon-based substrate.

[0008] An encapsulation layer is arranged on a side of the OLED device away from the silicon-based substrate; the encapsulation layer comprises at least a first organic layer; in a direction perpendicular to the silicon-based substrate, a projection of the first organic layer does not overlap with the partition area.

[0009] In a second aspect, the embodiments of the present application provide a manufacturing method of a silicon-based OLED packaging structure, the silicon-based OLED packaging structure comprising a plurality of display areas and a partition area arranged between the display areas; the manufacturing method comprises:

[0010] Forming an OLED device on a silicon-based substrate;

[0011] Forming an encapsulation layer on a side of the OLED device away from the silicon-based substrate;

[0012] The encapsulation layer includes at least a first organic layer; in a direction perpendicular to the silicon substrate, the projection of the first organic layer does not overlap with the segmentation region.

[0013] Thirdly, embodiments of the present invention also provide a display panel, which is formed by cutting a silicon-based OLED packaging structure provided in any embodiment of the present invention along a segmentation region. The display panel includes: a display area and a segmentation region disposed on at least one side of the display area.

[0014] The display panel further includes: a silicon substrate;

[0015] OLED devices are disposed on the silicon substrate;

[0016] An encapsulation layer is disposed on the side of the OLED device away from the silicon substrate; the encapsulation layer includes at least a first organic layer; in a direction perpendicular to the silicon substrate, the projection of the first organic layer does not overlap with the segmentation region.

[0017] In this invention, the silicon-based OLED encapsulation structure includes multiple display areas arranged in an array, and partition regions disposed between the display areas. The silicon-based OLED encapsulation structure includes a silicon substrate and OLED devices and an encapsulation layer sequentially disposed on the silicon substrate. The encapsulation layer may have multiple films with alternating inorganic and organic layers. The encapsulation layer includes at least a first organic layer, and the first organic layer does not overlap with the partition regions in the direction perpendicular to the silicon substrate. That is, the first organic layer includes multiple partitions, and each partition only covers the display area. Therefore, when dividing the display areas along the partition regions, the partition lines do not pass through the first organic layer, preventing edge cracks in the first organic layer from extending to the display area, improving moisture barrier performance, enhancing the edge encapsulation effect of the display device, and extending the product's lifespan and reliability. Attached Figure Description

[0018] Figure 1 This is a cross-sectional schematic diagram of a silicon-based OLED packaging structure in the prior art.

[0019] Figure 2 This is a cross-sectional structural diagram of a silicon-based OLED packaging structure provided in an embodiment of the present invention;

[0020] Figure 3 for Figure 1 A schematic diagram of the cut edge of a silicon-based OLED packaging structure;

[0021] Figure 4 This is a schematic diagram of a planar structure of a silicon-based OLED packaging structure provided in an embodiment of the present invention;

[0022] Figure 5A schematic flowchart illustrating a method for fabricating a silicon-based OLED packaging structure according to an embodiment of the present invention;

[0023] Figure 6 A schematic diagram of a PECVD process provided in an embodiment of the present invention;

[0024] Figure 7 This is a cross-sectional structural diagram of a display panel provided in an embodiment of the present invention. Detailed Implementation

[0025] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0026] Figure 1 This is a cross-sectional schematic diagram of a silicon-based OLED encapsulation structure in the prior art. The silicon-based OLED encapsulation structure includes a display area AA' and a dividing region B1' between the display areas AA'. The silicon-based OLED encapsulation structure may include a silicon substrate 1', an OLED device 2', and an encapsulation layer arranged sequentially. During the fabrication of the silicon-based OLED encapsulation structure, in order to prevent oxygen or moisture from penetrating the device, inorganic layers 4' such as SiNx and Al2O3 must be encapsulated on the surface of the device to achieve a moisture barrier effect. In addition, to ensure the encapsulation effect and reduce moisture permeability, OLED devices typically employ a multi-layer encapsulation film structure, such as... Figure 1 As shown, the encapsulation layer employs a structure with alternating inorganic layer 4' and organic layer 3'. Figure 1 As shown, the multiple stacked films (alternating inorganic layer 4' and organic layer 3') of the current silicon-based OLED packaging structure are prepared using a full-surface coating process. After cutting, edge cracks are easily generated at the edges of the stacked films, which can easily lead to the extension of the edge cracks to the display area, causing packaging failure.

[0027] To address the above problems, embodiments of the present invention provide a silicon-based OLED packaging structure, such as... Figure 2 As shown, Figure 2 A cross-sectional structural diagram of a silicon-based OLED packaging structure provided in an embodiment of the present invention includes: multiple display areas AA and a dividing area B1 disposed between the display areas AA;

[0028] The silicon-based OLED packaging structure also includes: a silicon substrate 1;

[0029] OLED device 21 is disposed on silicon substrate 1;

[0030] The encapsulation layer 22 is arranged on the side of the OLED device 21 away from the silicon substrate 1, and at least comprises the first organic layer 7; the projection of the first organic layer 7 in the direction perpendicular to the silicon substrate 1 does not overlap the segmentation area B1.

[0031] The silicon-based OLED encapsulation structure is a mother structure comprising a plurality of display areas AA. After the preparation process of the silicon-based OLED encapsulation structure is completed, the silicon-based OLED encapsulation structure is cut along the cutting path B1 to form a plurality of independent display panels. The silicon substrate 1 is provided with the OLED device 21 and the encapsulation layer 22 in sequence. The silicon substrate 1 is a silicon substrate with prepared circuits. For example, the silicon substrate 1 is provided with a driving circuit corresponding to the OLED device 21. The driving circuit is used to provide a driving current for the corresponding OLED device 21 to make the corresponding OLED device 21 emit light. Optionally, the OLED device 21 can comprise an anode layer 2, a pixel definition layer 3, an organic light-emitting layer 4 and a cathode layer 5 arranged away from the silicon substrate 1 in sequence. The anode layer 2 is electrically connected to the corresponding driving circuit, the pixel definition layer 3 defines each independent light-emitting area, and the organic light-emitting layer 4 can emit light of a corresponding color under the action of the voltage difference between the anode layer 2 and the cathode layer 5. The organic light-emitting layer 4 can be formed by an evaporation method, and the anode layer 2 and the cathode layer 5 can be formed by an evaporation method, a sputtering method, a vapor deposition method, an ion beam deposition method, an electron beam deposition method or a laser ablation method. This embodiment is not limited in this regard.

[0032] The encapsulation layer 22 is arranged on the OLED device 21 to protect the OLED device 21. The encapsulation layer 22 can comprise organic layers and inorganic layers arranged alternately. In this embodiment, the encapsulation layer 22 at least comprises the first organic layer 7. In this embodiment, the first organic layer 7 is intermittent, as shown in the figure, the first organic layer 7 is disconnected at the cutting path B1, and no first organic layer 7 is formed in the cutting path B1. After the cutting along the cutting path B1 is completed, the edge cracks of the first organic layer 7 are avoided from extending to the display area AA, and the water vapor blocking performance is improved. Figure 2

[0033] In the embodiment of the present application, the silicon-based OLED encapsulation structure comprises a plurality of array-arranged display areas and segmentation areas arranged between the display areas. The silicon-based OLED encapsulation structure comprises a silicon substrate and an OLED device and an encapsulation layer arranged on the silicon substrate in sequence. The encapsulation layer can be provided with a plurality of film layers of inorganic layers and organic layers arranged alternately. The encapsulation layer at least comprises a first organic layer, and the first organic layer does not overlap the segmentation area in the direction perpendicular to the silicon substrate. That is, the first organic layer comprises a plurality of sub-areas, and each sub-area only covers the display area. When each display area is segmented along the cutting area, the segmentation line does not pass through the first organic layer, the edge cracks of the first organic layer are avoided from extending to the display area, the water vapor blocking performance is improved, the edge encapsulation effect of the display device is improved, and the service life and reliability of the product are improved.​

[0034] The above is the core idea of the present application. The technical solutions in the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0035] With reference to the foregoing Figure 2 Optionally, the encapsulation layer 22 can further include: a first inorganic layer 6 and a second inorganic layer 8; the first inorganic layer 6 is arranged on the side of the first organic layer 7 close to the silicon substrate 1; the second inorganic layer 8 is arranged on the side of the first organic layer 7 away from the silicon substrate 1; in the direction perpendicular to the silicon substrate 1, the projection of the first inorganic layer 6 covers the first organic layer 7; the projection of the second inorganic layer 8 covers the first organic layer 7.

[0036] Figure 3 To Figure 1 The structural diagram of the cutting edge of the silicon-based OLED encapsulation structure. Because of the difference in the thermal expansion system between the multi-layer laminated film structures (organic layer and inorganic layer) of the encapsulation layer, stress is concentrated at the edge joint, and small gaps are easily formed between adjacent laminated films during long-term use. As shown in Figure 2 The first inorganic layer 6, the first organic layer 7 and the second inorganic layer 8 are arranged in the encapsulation form in this embodiment, and because the first organic layer 7 only covers the display area AA and does not overlap the cutting path B1, the first inorganic layer 6 and the second inorganic layer 8 cover the silicon substrate 1 in the whole layer, so that the silicon-based OLED encapsulation structure forms a structure in which the first inorganic layer 6 and the second inorganic layer 8 jointly cover the first organic layer 7, and the first inorganic layer 6 and the second inorganic layer 8 directly contact. Optionally, the first inorganic layer 6 and the second inorganic layer 8 can be made of the same material, so that their thermal expansion coefficients are the same, and small gaps are not easily formed between the first inorganic layer 6 and the second inorganic layer 8, further improving the edge encapsulation effect of the display device, reducing the water vapor intrusion caused by the gap between the film layers at the edge joint, and prolonging the service life of the product.

[0037] Figure 4 The structural diagram of the cutting edge of the silicon-based OLED encapsulation structure. Because of the difference in the thermal expansion system between the multi-layer laminated film structures (organic layer and inorganic layer) of the encapsulation layer, stress is concentrated at the edge joint, and small gaps are easily formed between adjacent laminated films during long-term use. As shown in Figure 4 The structural diagram of the cutting edge of the silicon-based OLED encapsulation structure. Because of the difference in the thermal expansion system between the multi-layer laminated film structures (organic layer and inorganic layer) of the encapsulation layer, stress is concentrated at the edge joint, and small gaps are easily formed between adjacent laminated films during long-term use. As shown in

[0038] Optionally, in the direction perpendicular to the silicon-based substrate 1, the first inorganic layer 6 and the second inorganic layer 8 can cover a plurality of display areas AA and the division areas B1 arranged between the display areas AA. When the silicon-based OLED encapsulation structure is prepared, the first inorganic layer 6 and the second inorganic layer 8 can be integral layer structures covering the entire silicon-based substrate 1, so that the first inorganic layer 6 and the second inorganic layer 8 directly contact at the cutting path B1, effectively avoiding the formation of micro gaps between the side surface laminated films, preventing the invasion of water and oxygen, and improving the reliability of the final display panel.

[0039] Optionally, the first inorganic layer 6 and the second inorganic layer 8 can include at least one of aluminum oxide, titanium oxide, zinc oxide and molybdenum oxide; and the first organic layer 7 can include at least one of silicon nitride, silicon oxide and silicon oxynitride. In the embodiment, the first inorganic layer 6 includes but is not limited to inorganic metal oxide materials such as Al2O3, TiOx, ZrO and MoO, and the first inorganic layer 6 is a single layer film or a multi-layer laminated film containing the above inorganic metal oxide materials. Similarly, the second inorganic layer 8 includes but is not limited to inorganic metal oxide materials such as Al2O3, TiOx, ZrO and MoO, and the second inorganic layer 8 is a single layer film or a multi-layer laminated film containing the above inorganic metal oxide materials. The first organic layer 7 includes but is not limited to nitride or oxide materials such as SiNx, SiOx and SiONx, and the first organic layer 7 is a single layer film or a multi-layer laminated film containing the above nitride or oxide materials. The embodiment does not specially limit the specific materials and the number of films of the first inorganic layer 6, the first organic layer 7 and the second inorganic layer 8. Preferably, the first inorganic layer 6 and the second inorganic layer 8 can be structures with the same material and the same number of films, so as to further avoid the gaps between the laminated films and improve the encapsulation reliability.

[0040] Based on the same concept, the embodiment of the present application also provides a method for manufacturing a silicon-based OLED encapsulation structure. Figure 5 The flowchart of the method for manufacturing a silicon-based OLED encapsulation structure provided by the embodiment of the present application is shown in Figure 5 The method of the embodiment includes the following steps:

[0041] Step S110, forming an OLED device on a silicon-based substrate.

[0042] Optionally, forming the OLED device on the silicon-based substrate on which the driving circuit is manufactured can include: sequentially forming an anode layer, a pixel definition layer, an organic light-emitting layer and a cathode layer on the silicon-based substrate.

[0043] Step S120, forming an encapsulation layer on the side of the OLED device away from the silicon-based substrate; wherein the encapsulation layer at least includes a first organic layer; and in the direction perpendicular to the silicon-based substrate, the projection of the first organic layer does not overlap with the division area.

[0044] In the embodiment of the present application, the silicon-based OLED packaging structure includes a plurality of arrayed display areas and a partition area arranged between the display areas. The silicon-based OLED packaging structure includes a silicon-based substrate and an OLED device and a packaging layer arranged on the silicon-based substrate in sequence. The packaging layer can be provided with a film layer in which a plurality of inorganic layers and organic layers are arranged alternately. The packaging layer includes at least a first organic layer, and the first organic layer does not overlap with the partition area in a direction perpendicular to the silicon-based substrate. That is, the first organic layer includes a plurality of sub-areas, and each sub-area covers only the display area. When each display area is divided along the cutting area, the cutting line does not pass through the first organic layer, so as to avoid the first organic layer from generating edge cracks and extending to the display area, improve the water vapor barrier performance, and improve the edge packaging effect of the display device.

[0045] Optionally, the first inorganic layer and the second inorganic layer can include at least one of aluminum oxide, titanium oxide, zinc oxide and molybdenum oxide; and the first organic layer can include at least one of silicon nitride, silicon oxide and silicon oxynitride. In the embodiment, the first inorganic layer 6 includes but is not limited to inorganic metal oxide materials such as Al2O3, TiOx, ZrO and MoO, and the first inorganic layer 6 is a single-layer film or a multi-layer laminated film containing the above inorganic metal oxide materials. Similarly, the second inorganic layer 8 includes but is not limited to inorganic metal oxide materials such as Al2O3, TiOx, ZrO and MoO, and the second inorganic layer 8 is a single-layer film or a multi-layer laminated film containing the above inorganic metal oxide materials. The first organic layer 7 includes but is not limited to nitride or oxide materials such as SiNx, SiOx and SiONx, and the first organic layer 7 is a single-layer film or a multi-layer laminated film containing the above nitride or oxide materials. The specific materials and film layer numbers of the first inorganic layer 6, the first organic layer 7 and the second inorganic layer 8 are not specially limited in the embodiment. Preferably, the first inorganic layer 6 and the second inorganic layer 8 can be structures with the same material and the same number of film layers, so as to further avoid the gap between the laminated films and improve the packaging reliability.

[0046] Optionally, the encapsulation layer formed on the side of the OLED device away from the silicon-based substrate can include: forming a first inorganic layer by an atomic layer deposition (ALD) device; forming a first organic layer by a plasma-enhanced chemical vapor deposition (PECVD) device; the first organic layer is arranged one-to-one corresponding to the display area; in a direction perpendicular to the silicon-based substrate, the projection of the first organic layer covers the corresponding display area; and forming a second inorganic layer by an atomic layer deposition (ALD) device. In this embodiment, the first inorganic layer and the second inorganic layer can be formed by an atomic layer deposition (ALD) process, for example, using trimethylaluminum precursor and water vapor to react to generate an aluminum oxide film, and using titanium tetrachloride precursor and water vapor to react to generate a titanium dioxide film. The first inorganic layer and the second inorganic layer are both full-face film layers covering the entire silicon-based substrate. The first organic layer can be combined with a plasma-enhanced chemical vapor deposition (PECVD) process and a mask process, for example, using silane and nitrogen to make a silicon nitride film by a PECVD device to achieve zoned film plating, and only plating the display area AA to make the first inorganic layer and the second inorganic layer jointly act on the first organic layer to improve the reliability of the encapsulation.

[0047] Optionally, forming the first organic layer by a plasma-enhanced chemical vapor deposition (PECVD) device can include: using a zoned mask plate as a mask to form the first organic layer on the side of the first inorganic layer away from the silicon-based substrate by a plasma-enhanced chemical vapor deposition (PECVD) device; the zoned mask plate includes a plurality of transmission zones and blocking parts between the transmission zones; the transmission zones are arranged one-to-one corresponding to the first organic layer; in a direction perpendicular to the silicon-based substrate, the projection of the transmission zones coincides with the corresponding first organic layer.

[0048] Because the first organic layer is an organic material that is not suitable for higher temperatures, this embodiment realizes the preparation of the first organic layer by a PECVD technology. This technology combines the basic principles of chemical vapor deposition (CVD) and plasma technology, and can produce high-quality thin films and accurately control their properties. Unlike traditional CVD technology, PECVD uses plasma to improve deposition efficiency, enabling material deposition at lower temperatures. This embodiment uses a zoned mask plate 101 to form the first organic layer 7 on the silicon-based substrate 1. The zoned mask plate 101 includes transmission zones 1011 and blocking parts 1012 between the transmission zones 1011. The transmission zones 1011 are arranged one-to-one corresponding to the first organic layer 7, and the blocking parts 1012 correspondingly form the cutting path B1. In this embodiment, the projection of the transmission zones coincides with the corresponding first organic layer, and optionally, the zoned mask 101 can be attached to the silicon-based substrate 102 to further improve the accuracy of zoned film plating.

[0049] Figure 6A PECVD process schematic diagram is provided in the embodiment of the present application. In the embodiment, low temperature plasma under low pressure is used to trigger glow discharge at the cathode 103 of the deposition chamber. The sample is heated to a set temperature by the process or by other heating devices, and a specific amount of process gas is introduced. These gases undergo various chemical reactions under the action of plasma, and finally a layer of solid thin film is generated on the surface of the silicon-based substrate 1. The PECVD technology can enhance the reactivity of organic and inorganic chemical monomers, allowing the use of a variety of precursor substances, including materials that are traditionally considered inert, to deposit various thin films in this way.

[0050] The embodiment of the present application also provides an electronic device. Figure 7 A cross-sectional structure schematic diagram of a display panel is provided in the embodiment of the present application, as shown in the figure, the display panel is cut along the division area by the silicon-based OLED encapsulation structure provided by any embodiment of the present application, and the display panel comprises a display area AA and a division area B1 arranged on at least one side of the display area. Figure 7

[0051] The display panel further comprises a silicon-based substrate 1.

[0052] An OLED device 21 is arranged on the silicon-based substrate 1.

[0053] An encapsulation layer 22 is arranged on a side of the OLED device 21 away from the silicon-based substrate 1, and the encapsulation layer 22 at least comprises a first organic layer 7; in a direction perpendicular to the silicon-based substrate 1, a projection of the first organic layer 7 does not overlap with the division area B1.

[0054] The display panel in the embodiment comprises a display area and a division area arranged on at least one side of the display area. The display panel comprises a silicon-based substrate and an OLED device and an encapsulation layer arranged on the silicon-based substrate in sequence, and the encapsulation layer can be provided with a film layer in which a plurality of inorganic layers and organic layers are arranged alternately. The encapsulation layer at least comprises a first organic layer, and the first organic layer does not overlap with the division area in a direction perpendicular to the silicon-based substrate. That is, the first organic layer only covers the display area and does not overlap with the cutting area, so that when a plurality of display panels are cut along the cutting area, the cutting line does not pass through the first organic layer, so as to avoid that the first organic layer generates edge cracks and expands to the display area, improve the water vapor barrier performance, and improve the edge encapsulation effect of the display device.

[0055] The display panel in the embodiment can be a display panel of a mobile phone, or a display panel of a computer, a television, a smart wearable device or the like, and the embodiment is not specially limited in this regard. The silicon-based OLED micro display is now widely used in military markets such as wearable headsets, gun sights, night vision devices, and will experience explosive growth with the application of new technologies such as AR / VR and autonomous driving. ​

[0056] Note that the above merely describes preferred embodiments of the application and the principles of the technology applied. Those skilled in the art will understand that the application is not limited to the specific embodiments described herein, and that various obvious changes, modifications and substitutions can be made to the application without departing from the scope of the application. Therefore, although the application has been described in detail by the above embodiments, the application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the application, and the scope of the application is determined by the appended claims.

Claims

1. A silicon-based OLED packaging structure, characterized in that, include: Multiple display areas and partition areas disposed between the display areas; The silicon-based OLED packaging structure further includes: a silicon-based substrate; OLED devices are disposed on the silicon substrate; An encapsulation layer is disposed on the side of the OLED device away from the silicon substrate; the encapsulation layer includes at least a first organic layer; in a direction perpendicular to the silicon substrate, the projection of the first organic layer does not overlap with the segmentation region.

2. The silicon-based OLED packaging structure according to claim 1, characterized in that, The encapsulation layer further includes: a first inorganic layer and a second inorganic layer; The first inorganic layer is disposed on the side of the first organic layer closer to the silicon substrate; the second inorganic layer is disposed on the side of the first organic layer away from the silicon substrate. In a direction perpendicular to the silicon substrate, the projection of the first inorganic layer covers the first organic layer; the projection of the second inorganic layer covers the first organic layer.

3. The silicon-based OLED packaging structure according to claim 1, characterized in that, The first organic layer is configured in a one-to-one correspondence with the display area; In a direction perpendicular to the silicon substrate, the projection of the first organic layer covers the corresponding display area.

4. The silicon-based OLED packaging structure according to claim 2, characterized in that, In a direction perpendicular to the silicon substrate, the first inorganic layer and the second inorganic layer cover a plurality of display areas and a partition area disposed between the display areas.

5. A method for fabricating a silicon-based OLED packaging structure, characterized in that, The silicon-based OLED encapsulation structure includes multiple display areas and segmentation areas disposed between the display areas; the fabrication method includes: Forming OLED devices on silicon substrates; An encapsulation layer is formed on the side of the OLED device away from the silicon substrate; The encapsulation layer includes at least a first organic layer; in a direction perpendicular to the silicon substrate, the projection of the first organic layer does not overlap with the segmentation region.

6. The method for fabricating a silicon-based OLED packaging structure according to claim 5, characterized in that, An encapsulation layer is formed on the side of the OLED device away from the silicon substrate, including: The first inorganic layer is formed using an atomic layer deposition (ALD) apparatus; The first organic layer is formed by partitioning the film using a plasma-enhanced chemical vapor deposition (PECVD) device; the first organic layer is disposed in a one-to-one correspondence with the display area; in a direction perpendicular to the silicon substrate, the projection of the first organic layer covers the corresponding display area; A second inorganic layer is formed using an atomic layer deposition (ALD) device.

7. The method for fabricating a silicon-based OLED packaging structure according to claim 6, characterized in that, The first inorganic layer and the second inorganic layer comprise at least one of the following: aluminum oxide, titanium oxide, zinc oxide, and molybdenum oxide; The first organic layer includes at least one of the following: silicon nitride, silicon oxide, and silicon oxynitride.

8. The method for fabricating a silicon-based OLED packaging structure according to claim 6, characterized in that, The first organic layer is formed by partitioning and depositing films using a plasma-enhanced chemical vapor deposition (PECVD) device, including: Using a partitioned mask as a mask, a first organic layer is formed on the side of the first inorganic layer away from the silicon substrate by plasma-enhanced chemical vapor deposition (PECVD). The partitioned mask includes multiple transparent regions and blocking portions between the transparent regions. The transparent regions are arranged one-to-one with the first organic layer. In a direction perpendicular to the silicon substrate, the projection of the transparent region coincides with the corresponding first organic layer.

9. The method for fabricating a silicon-based OLED packaging structure according to claim 5, characterized in that, Forming OLED devices on silicon substrates includes: An anode layer, a pixel definition layer, an organic light-emitting layer, and a cathode layer are sequentially formed on the silicon substrate.

10. A display panel, characterized in that, The display panel is formed by cutting along the segmentation region from the silicon-based OLED packaging structure according to any one of claims 1-4, and the display panel includes: a display area and a segmentation region disposed on at least one side of the display area; The display panel further includes: a silicon substrate; OLED devices are disposed on the silicon substrate; An encapsulation layer is disposed on the side of the OLED device away from the silicon substrate; the encapsulation layer includes at least a first organic layer; in a direction perpendicular to the silicon substrate, the projection of the first organic layer does not overlap with the segmentation region.

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