Imaging apparatus and method of manufacturing imaging apparatus

Abstract

The imaging device includes: a solid-state imaging element including an infrared absorption filter for absorbing infrared light; and a substrate on which a plurality of pixels are arranged in a two-dimensional array, the pixels including a photoelectric conversion region that converts incident light transmitted through the infrared absorption filter into an electric signal. The infrared absorption filter and the substrate are recessed in an incident direction of incident light and are bent as a whole.

Description

Technical Field

[0001] This disclosure relates to imaging apparatus and to a method of manufacturing an imaging apparatus. Background Technology

[0002] When an image sensor detects a large amount of near-infrared light (infrared radiation) that is invisible to the human eye, the resulting image deviates in color reproduction compared to when the object is viewed directly by the human eye. Therefore, filters such as infrared cut-off filters are incorporated into the image sensor to reduce the amount of near-infrared light that the image sensor detects.

[0003] For example, PTL1 discloses an imaging device and a camera module. In this imaging device, multiple multilayer films with different refractive indices are disposed on the surface of a sealing glass on the optical sensor side.

[0004] Reference List

[0005] Patent documents

[0006] PTL 1: Japanese Unexamined Patent Application Publication No. 2013-41941 Summary of the Invention

[0007] In an imaging apparatus, the principal ray is incident obliquely on a multilayer filter at a position high in the image plane. It is desirable to provide an imaging apparatus and a method for manufacturing the imaging apparatus that can effectively suppress or prevent degradation of color reproducibility even when the principal ray is incident obliquely on the multilayer filter.

[0008] An imaging apparatus according to a first aspect of the present disclosure includes: an infrared absorption filter for absorbing infrared light; and a solid-state imaging element including a substrate, wherein a plurality of pixels are arranged in a two-dimensional array in the substrate, each pixel including a photoelectric conversion region for converting incident light transmitted through the infrared absorption filter into an electrical signal, wherein the infrared absorption filter and the substrate are recessed in the incident direction of the incident light and are curved as a whole.

[0009] In the imaging apparatus according to the second aspect of this disclosure, the infrared absorption filter in the imaging apparatus according to the first aspect includes an infrared absorption film formed within a pixel of a solid-state imaging element via an on-chip process. Furthermore, in addition to the infrared absorption film, the imaging apparatus according to the second aspect further includes a multilayer filter formed via an on-chip process. The multilayer filter includes alternately stacked high-refractive-index layers and low-refractive-index layers and has a specific transmission spectrum. The refractive index of the low-refractive-index layers is lower than that of the high-refractive-index layers.

[0010] The imaging apparatus according to a third aspect of the invention further includes a base having a curved receiving portion at the central portion of the front surface on the side of the solid-state imaging element in the imaging apparatus according to the first aspect. The curved receiving portion corresponds to the curved shape of the solid-state imaging element and is recessed in the incident direction of the incident light to receive the solid-state imaging element.

[0011] A method for manufacturing an imaging apparatus according to a fourth aspect of this disclosure includes: forming a solid-state imaging element comprising a substrate, wherein a plurality of pixels are arranged in a two-dimensional array in the substrate, each pixel comprising a photoelectric conversion region for converting incident light into an electrical signal; forming a base comprising a curved receiving portion and a ventilation portion at a central portion of a front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element, the ventilation portion being formed in the curved receiving portion from the central portion of the front surface to a rear surface side opposite to the central portion of the front surface; placing the solid-state imaging element in the curved receiving portion and forming an infrared absorbing filter for absorbing infrared light, the infrared absorbing filter covering the curved receiving portion, wherein the solid-state imaging element is located between the infrared absorbing filter and the curved receiving portion; and generating a pressure difference, wherein the pressure on the inner side of the curved receiving portion is less than the pressure on the side of the infrared absorbing filter, such that the solid-state imaging element and the infrared absorbing filter bend along the curved receiving portion and that the infrared absorbing filter is in close contact with a light-receiving surface of the solid-state imaging element having a plurality of pixels arranged thereon.

[0012] A method for manufacturing an imaging apparatus according to a fifth aspect of this disclosure includes: forming a solid-state imaging element comprising a substrate, wherein a plurality of pixels are arranged in a two-dimensional array in the substrate, each pixel comprising a photoelectric conversion region for converting incident light into an electrical signal; forming a base comprising a curved receiving portion at a central portion of a front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element; placing the solid-state imaging element in the curved receiving portion and bringing an infrared absorbing filter for absorbing infrared light into close contact with a light-receiving surface of the solid-state imaging element having a plurality of pixels arranged thereon; and after bringing the infrared absorbing filter into close contact with the light-receiving surface of the solid-state imaging element, bending the solid-state imaging element and the infrared absorbing filter along the curved receiving portion. Attached Figure Description

[0013] Figure 1 This is a schematic cross-sectional view of the main parts of the first configuration of the imaging apparatus according to the first embodiment of the present disclosure.

[0014] Figure 2 It shows the use of Figure 1 A diagram illustrating the transmission characteristics of the infrared absorption filter in the imaging device shown.

[0015] Figure 3 This describes the installation. Figure 1 A cross-sectional view of the first step of the method using the imaging device shown.

[0016] Figure 4 This is a cross-sectional view of the second step in describing the method of installing the imaging device.

[0017] Figure 5 This is a schematic cross-sectional view of the main part of the second configuration of the imaging apparatus according to the first embodiment of the present disclosure.

[0018] Figure 6 This is a graph showing the relationship between the refractive index of various inorganic materials and the refractive index of each inorganic material, which allows for the formation of materials for use in... Figure 5 The multilayer film filter of the imaging device shown.

[0019] Figure 7 It shows the use of Figure 5 Examples of the transmission characteristics of the infrared absorption filter and multilayer filter of the imaging device shown.

[0020] Figure 8 This is a step diagram illustrating a first bending mounting method in the case where a portion of a solid-state imaging element protrudes from the bending housing of the base. Figure 8 (A) is a plan view of the base before installation. Figure 8 (B) is a cross-sectional configuration diagram of the base before installation. Figure 8 (C) is a planar configuration diagram of the solid-state imaging element before installation. Figure 8 (D) is a plan view of the imaging device in which the solid-state imaging element is mounted on the curved housing of the base. Figure 8 (E) is along Figure 8 The diagram shown in (D) is a cross-sectional view of the imaging device taken by line EE. Figure 8 (F) is along Figure 8 The diagram shown in (D) is a cross-sectional view of the imaging device taken by line FF.

[0021] Figure 9 This is a step diagram illustrating a second bending mounting method in which the solid-state imaging element is fully housed in a bent housing portion of the base. Figure 9 (A) is a plan view of the base before installation. Figure 9 (B) is a cross-sectional configuration diagram of the base before installation. Figure 9 (C) is a planar configuration diagram of the solid-state imaging element before installation. Figure 9 (D) is a plan view of the imaging device in which the solid-state imaging element is mounted on the curved housing of the base. Figure 9 (E) is along Figure 9The diagram shown in (D) is a cross-sectional view of the imaging device taken by line EE. Figure 9 (F) is along Figure 9 The diagram shown in (D) is a cross-sectional view of the imaging device taken by line FF.

[0022] Figure 10 This is a step diagram illustrating a third bending mounting method for mounting a solid-state imaging element on a bending receiver according to a first configuration. Figure 10 (A) is a plan view of the base before installation. Figure 10 (B) is a cross-sectional configuration diagram of the base before installation. Figure 10 (C) is a cross-sectional configuration diagram of the imaging device, in which a solid-state imaging element is mounted on a curved receiving portion of the base by means of a pressure difference caused by decompression. Figure 10 (D) is a cross-sectional configuration diagram of the imaging device, in which a solid-state imaging element is mounted on a curved receiving portion of the base by means of a pressure difference caused by pressurization.

[0023] Figure 11 This is a step diagram illustrating a third bending mounting method for mounting a solid-state imaging element on a bending receiver according to a second configuration. Figure 11 (A) is a plan view of the base before installation. Figure 11 (B) is a cross-sectional configuration diagram of the base before installation.

[0024] Figure 12 This is a diagram illustrating a fourth bending mounting method for mounting a solid-state imaging element on a bending housing according to a third configuration. Figure 12 (A) is a plan view of the base before installation. Figure 12 (B) is a cross-sectional configuration diagram of the base before installation. Figure 12 (C) is a cross-sectional configuration diagram when the solid-state imaging element is placed on the curved housing of the base. Figure 12 (D) is a cross-sectional configuration diagram of an imaging device in which a solid-state imaging element is mounted on a curved housing on a base.

[0025] Figure 13 This is a step diagram describing a bending mounting method for mounting a solid-state imaging element on a bending housing according to a fourth configuration. Figure 13 (A) is a cross-sectional configuration diagram of the base and solid-state imaging element before installation. Figure 13 (B) is a magnified cross-sectional view showing the main parts of the base and solid-state imaging element.

[0026] Figure 14 It is a plan view of the base according to the fifth configuration.

[0027] Figure 15This is a first-step cross-sectional view that describes an overview of a method for manufacturing a solid-state imaging element according to a first configuration of an imaging device.

[0028] Figure 16 This is the cross-sectional view of the second step.

[0029] Figure 17 This is the cross-sectional view of the third step.

[0030] Figure 18 This is a cross-sectional view of an imaging device in which a solid-state imaging element is mounted on a base.

[0031] Figure 19 This is a system configuration diagram of the imaging device.

[0032] Figure 20 This is a circuit diagram of the pixels in a solid-state imaging element.

[0033] Figure 21 This is a cross-sectional diagram showing the specific configuration of the solid-state imaging element and the infrared absorption filter.

[0034] Figure 22 This is a diagram showing the chemical formula of the organic material included in the infrared absorption filter.

[0035] Figure 23A This is a cross-sectional view describing the first step of a method for manufacturing a solid-state imaging element.

[0036] Figure 23B This is the cross-sectional view of the second step.

[0037] Figure 23C This is the cross-sectional view of the third step.

[0038] Figure 23D This is the cross-sectional view of the fourth step.

[0039] Figure 23E This is the cross-sectional view of the fifth step.

[0040] Figure 23F This is the cross-sectional view of step six.

[0041] Figure 23G This is the cross-sectional view of step seven.

[0042] Figure 23H This is the cross-sectional view of step eight.

[0043] Figure 23I This is the cross-sectional view of the ninth step.

[0044] Figure 23J This is the cross-sectional view of step ten.

[0045] Figure 23K This is the cross-sectional view of step eleven.

[0046] Figure 23L This is the cross-sectional view of the twelfth step.

[0047] Figure 23M This is the cross-sectional view of step thirteen.

[0048] Figure 23N This is the cross-sectional view of step fourteen.

[0049] Figure 230 This is the cross-sectional view of step fifteen.

[0050] Figure 24 This is a cross-sectional configuration diagram of a solid-state imaging element and an infrared absorption filter used in a press-type bending mounting method.

[0051] Figure 25A This is a cross-sectional view describing the first step of the press-type bending installation method.

[0052] Figure 25B This is the cross-sectional view of the second step.

[0053] Figure 25C This is the second-step cross-sectional view when the configuration of the curved portion of the housing changes.

[0054] Figure 26A This is a schematic cross-sectional view of the steps in the pressing-type bending installation method using a clamping fixture.

[0055] Figure 26B It is a 3D view of the base, solid-state imaging element, and infrared absorption filter.

[0056] Figure 27A This is a plan view of the curved housing of the base on which the solid-state imaging element is mounted.

[0057] Figure 27B This is a planar configuration diagram of a solid-state imaging element.

[0058] Figure 28A This is a plan view of the base used to describe the pressure difference type bending installation method and the pressure reduction type bending installation method.

[0059] Figure 28B This is a plan view of the base.

[0060] Figure 29A This is a plan view of the base where the solid-state imaging element is placed.

[0061] Figure 29B This is a cross-sectional view of the base on which the solid-state imaging element is placed.

[0062] Figure 29C This is an enlarged view showing the cross-sectional configuration of the main parts of the base that houses the solid-state imaging element.

[0063] Figure 30A This is a plan view of the base with the gas leak-proof membrane installed.

[0064] Figure 30B This is a cross-sectional configuration diagram of the seat with the gas leak-proof membrane installed.

[0065] Figure 31 This is a cross-sectional view of the base with the clamps installed.

[0066] Figure 32A This is a plan view of the base in the decompression state.

[0067] Figure 32B This is a cross-sectional view of the base under decompression conditions.

[0068] Figure 33 This is a cross-sectional view of the base after bending and installation.

[0069] Figure 34 This is a cross-sectional configuration diagram of the imaging device after the bending installation is completed.

[0070] Figure 35A This is a plan view of the base used to describe the pressure-differential bending installation method, specifically the pressurized bending installation method.

[0071] Figure 35B This is a plan view of the base.

[0072] Figure 36A This is a plan view of the base where the solid-state imaging element is placed.

[0073] Figure 36B This is a cross-sectional view of the base on which the solid-state imaging element is placed.

[0074] Figure 36C This is an enlarged view showing the cross-sectional configuration of the main parts of the base that houses the solid-state imaging element.

[0075] Figure 37A This is a plan view of the base with the gas leak-proof membrane installed.

[0076] Figure 37B This is a cross-sectional view of the base with the gas leak-proof membrane installed.

[0077] Figure 38 This is a cross-sectional view of the base with the nozzle installed.

[0078] Figure 39A This is a plan view of the base under pressure.

[0079] Figure 39B This is a cross-sectional view of the base under pressure.

[0080] Figure 40 This is a cross-sectional view of the base after bending and installation.

[0081] Figure 41 This is a cross-sectional configuration diagram of the imaging device after the bending installation is completed.

[0082] Figure 42 It is a cross-sectional configuration diagram of the solid-state imaging element and infrared absorption filter in the first configuration.

[0083] Figure 43 It is a cross-sectional configuration diagram of the solid-state imaging element and infrared absorption filter according to the second configuration.

[0084] Figure 44 It is a cross-sectional configuration diagram of the solid-state imaging element and infrared absorption filter in the third configuration.

[0085] Figure 45 This is a cross-sectional configuration diagram of the solid-state imaging element and infrared absorption filter in the fourth configuration.

[0086] Figure 46 This is a cross-sectional configuration diagram of the solid-state imaging element and infrared absorption filter in the fifth configuration.

[0087] Figure 47 It is a cross-sectional configuration diagram of the solid-state imaging element, infrared absorption filter and multilayer film filter according to the sixth configuration.

[0088] Figure 48 The diagram shows the specific cross-sectional configuration of the multilayer film filter in an enlarged manner.

[0089] Figure 49A This is a wavelength-transmittance characteristic diagram of an infrared absorption filter.

[0090] Figure 49B This is a wavelength-transmittance characteristic diagram of a multilayer film filter.

[0091] Figure 50 It is a cross-sectional configuration diagram of the solid-state imaging element, infrared absorption filter and multilayer film filter according to the seventh configuration.

[0092] Figure 51 It is a cross-sectional configuration diagram of the solid-state imaging element, infrared absorption filter and multilayer film filter according to the eighth configuration.

[0093] Figure 52 It is a cross-sectional configuration diagram of the solid-state imaging element, infrared absorption filter and multilayer film filter according to the ninth configuration.

[0094] Figure 53The diagram shows the infrared absorbing material of the infrared absorbing filter 3, and each of (A) to (M) is a molecular structure diagram of the infrared absorbing material.

[0095] Figure 54 An example of the cross-sectional configuration of the imaging apparatus 1 according to the second embodiment of the present disclosure is shown.

[0096] Figure 55A This is a plan view of the base before installation.

[0097] Figure 55B This is a cross-sectional view of the base before installation.

[0098] Figure 56A This is a plan view of the base where the solid-state imaging element is placed.

[0099] Figure 56B This is a cross-sectional view of the base on which the solid-state imaging element is placed.

[0100] Figure 57A This is a plan view of the base with the infrared absorption filter installed.

[0101] Figure 57B This is a cross-sectional view of the mount for the infrared absorption filter.

[0102] Figure 58A This is a plan view of the base, solid-state imaging element, and infrared absorption filter after the bending installation is completed.

[0103] Figure 58B This is a cross-sectional configuration diagram of the base, solid-state imaging element, and infrared absorption filter after the bending installation is completed.

[0104] Figure 59A This is a plan view of the base used to describe the pressure difference type bending installation method and the pressure reduction type bending installation method.

[0105] Figure 59B This is a cross-sectional view of the base.

[0106] Figure 60A This is a plan view of the base where the solid-state imaging element is placed.

[0107] Figure 60B This is a cross-sectional view of the base on which the solid-state imaging element is placed.

[0108] Figure 60C The diagram shows the cross-sectional configuration of the main parts of the base in an enlarged manner.

[0109] Figure 61 This is a plan view of the infrared absorption filter.

[0110] Figure 62A This is a plan view of the base with the infrared absorption filter installed.

[0111] Figure 62B This is a cross-sectional view of the base with an infrared absorption filter installed.

[0112] Figure 63A This is a plan view of the base in the decompression state.

[0113] Figure 63B This is a cross-sectional view of the base under decompression conditions.

[0114] Figure 64 This is a cross-sectional view of the base with the embedded components filling the ventilation section.

[0115] Figure 65 This is a cross-sectional configuration diagram of the packaged component with its base installed.

[0116] Figure 66 This is a cross-sectional view of the package with the wires bonded.

[0117] Figure 67 It is a cross-sectional configuration diagram of the base under pressure according to the modified example.

[0118] Figure 68A This is a planar configuration diagram of a solid-state imaging element and an infrared absorption filter used to describe a press-type bending mounting method.

[0119] Figure 68B This is a cross-sectional configuration diagram used to describe a solid-state imaging element and an infrared absorption filter for a press-type bending mounting method.

[0120] Figure 69 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture before press-type bending installation.

[0121] Figure 70 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture during press-type bending installation.

[0122] Figure 71 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture after the press-type bending installation.

[0123] Figure 72 This is a plan view of an infrared absorbing filter used to describe a press-type bending mounting method.

[0124] Figure 73 This is a cross-sectional view of the base that houses the solid-state imaging element and the infrared absorption filter.

[0125] Figure 74 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture before press-type bending installation.

[0126] Figure 75 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture during press-type bending installation.

[0127] Figure 76 This is a cross-sectional configuration diagram of the base, solid-state imaging element, infrared absorption filter, and clamping fixture after the press-type bending installation. Detailed Implementation

[0128] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that the description is given in the following order.

[0129] 1. First Implementation Method

[0130] The first embodiment describes an example of applying the present technology to an imaging apparatus and a method for manufacturing an imaging apparatus. In the first embodiment, a filter is disposed on the light-receiving surface of a solid-state imaging element constituting the imaging apparatus, and both the solid-state imaging element and the filter are mounted in a curved shape. An infrared absorption filter is used for the filter. Furthermore, an infrared absorption filter and a multilayer film filter are used for the filter. The first embodiment describes in detail the imaging apparatus configured as described above and the method for manufacturing the imaging apparatus.

[0131] 2. Second Implementation Method

[0132] The second embodiment describes a method for bringing a film into close contact with the light-receiving surface of a solid-state imaging element in the imaging apparatus and method of manufacturing the imaging apparatus according to the first embodiment.

[0133] 3. Other implementation methods

[0134] <1. First Implementation Method>

[0135] Reference Figures 1 to 53 The imaging apparatus 1 according to the first embodiment of the present disclosure and the method of manufacturing the imaging apparatus 1 are described.

[0136] For convenience, the arrow-X direction, appropriately indicated in the accompanying drawings, indicates one planar direction of the imaging device 1 placed on a plane. The arrow-Y direction indicates another planar direction orthogonal to the arrow-X direction. Furthermore, the arrow-Z direction indicates an upward direction orthogonal to both the arrow-X and arrow-Y directions. That is, the arrow-X, arrow-Y, and arrow-Z directions are precisely aligned with the X-axis, Y-axis, and Z-axis directions of the three-dimensional coordinate system, respectively.

[0137] Note that these directions are indicated individually to aid in understanding the description and are not intended to limit the directions used in this technique.

[0138] Furthermore, in the first and second embodiments described later, the same or substantially the same reference numerals are used to denote the same components, and redundant descriptions are omitted.

[0139] [Schematic configuration of imaging device 1]

[0140] (1) Overview of the first configuration of imaging device 1

[0141] Figure 1 An example of a schematic cross-sectional configuration of the main parts of the first configuration of the imaging apparatus 1 according to the first embodiment is shown.

[0142] like Figure 1 As shown, the imaging device 1 includes a solid-state imaging element 2 and an infrared absorption filter 3.

[0143] The solid-state imaging element 2 includes a substrate 20. The substrate 20 includes a semiconductor substrate 21 and a wiring layer 22. The semiconductor substrate 21 has a first surface 21A and a second surface 21B opposite to the first surface 21A in the arrow-Z direction. The wiring layer 22 is disposed on the second surface 21B side of the semiconductor substrate.

[0144] The semiconductor substrate 21 is, for example, a single-crystal Si substrate. A photoelectric conversion region 200 that converts incident light L into an electrical signal is disposed in the semiconductor substrate 21. The incident light L enters the photoelectric conversion region 200 from outside the imaging device 1 through the infrared absorption filter 3 in a direction opposite to the incident direction of arrow -Z.

[0145] The photoelectric conversion region 200 is formed, for example, by a semiconductor photodiode. Here, one photoelectric conversion region 200 constitutes one pixel 200P.

[0146] Here, the wiring layer 22 includes multiple wirings 221 in the insulating film 222. In fact, the insulating film 222 is formed by stacking multiple insulating films.

[0147] Another substrate, not shown, is disposed on the opposite side of the wiring layer 22 relative to the semiconductor substrate 21. For example, readout circuitry is disposed in this other substrate. The readout circuitry reads out the charge converted into an electrical signal by the photoelectric conversion region 200. That is, the wiring layer 22 is used for electrical coupling between the photoelectric conversion region 200 and the readout circuitry. Note that in some cases, the readout circuitry can be described as a "pixel circuit".

[0148] Optical filter 23, optical lens 24 and planarization film 25 are stacked sequentially on the first surface 21A of semiconductor substrate 21 in the direction of arrow -Z.

[0149] Optical filter 23 is a color filter set for each pixel 200P. For example, an optical filter 23 is set for a pixel 200P to allow the wavelength band of green light to pass through (green (G)). Furthermore, an optical filter 23 is set for a pixel 200P to allow the wavelength band of red light to pass through (red (R)). Additionally, although not shown, an optical filter 23 is set for a pixel 200P to allow the wavelength band of blue light to pass through (blue (B)).

[0150] The optical lens 24 is formed in a curved shape, which, when viewed from the arrow-Y direction (hereinafter referred to as "viewed from the side"), protrudes in the direction opposite to the incident direction of the incident light L. The optical lens 24 is formed in a curved shape for each pixel 200P. That is, the optical lens 24 converges the incident light L in the incident direction. The optical lens 24 is mounted on the semiconductor substrate 21 and is formed as a so-called on-chip lens.

[0151] Note that the optical lens 24 can be formed in a curved shape for every two or more pixels 200P.

[0152] The planarization film 25 has a surface on the opposite side of the optical lens 24 that reduces the height difference shape caused by the optical lens 24, and is more planarized than the surface on the side of the optical lens 24. In other words, the adhesion of the planarization film 25 to the infrared absorption filter 3 stacked on the surface of the planarization film 25 is improved.

[0153] Infrared absorption filter 3 is disposed on the surface of planarization film 25 on the side opposite to optical lens 24. Infrared absorption filter 3 is an absorption-type infrared absorption film that absorbs infrared light. In other words, infrared absorption filter 3 is an infrared absorption film.

[0154] The infrared absorption filter 3 is formed on the surface of the solid-state imaging element 2 on the arrow-Z direction side (on the surface of the planarization film 25) by an on-chip process, and is ultimately formed to be in close contact with the surface of the solid-state imaging element 2. Here, the infrared absorption filter 3 is formed, for example, by spin coating.

[0155] Figure 2 An example of the transmission characteristics of the infrared absorption filter 3 is shown. Figure 2 In the figure, the horizontal axis indicates wavelength [nm], and the vertical axis indicates transmittance [%).

[0156] Figure 2 The transmittance of corresponding infrared absorption filters 3 with thicknesses of 0.7 μm, 1.0 μm, 1.3 μm, 1.6 μm, 1.9 μm, and 2.2 μm is shown. (As shown from...) Figure 2As can be seen, the thinner the infrared absorption filter 3, the higher the transmittance.

[0157] (2) Installation structure and installation method of imaging device 1

[0158] Figure 3 An example of the first step of a method for describing the installation of imaging device 1 is shown. Figure 4 An example of the second step of the method for describing the installation of imaging device 1 is shown.

[0159] The method for installing imaging device 1 is as follows.

[0160] First, prepare base 5 (see Figure 3 The base 5 includes a curved receiving portion 50 at the central portion of its front surface 50A. The curved receiving portion 50 is recessed from the front surface 50A in the incident direction of the incident light L and is formed in a curved shape when viewed from the side. A solid-state imaging element 2, on which an infrared absorption filter 3 is provided, is placed on the curved receiving portion 50 (see...). Figure 3 An adhesive 51 is pre-formed on the curved receiving portion 50. For example, a resin adhesive is used as the adhesive 51.

[0161] like Figure 3 As shown, the clamping fixture 6 is positioned above the solid-state imaging element 2 and the infrared absorption filter 3. The clamping fixture 6 has an end 60, which is formed into a curved shape that protrudes in the incident direction of the incident light L when viewed from the side.

[0162] The end 60 of the clamping fixture 6 is pressed against the infrared absorption filter 3 and the solid-state imaging element 2. Thus, the solid-state imaging element 2 and the infrared absorption filter 3 are each formed into a curved shape along the curved shape of the curved receiving portion 50 (see...). Figure 4 The solid-state imaging element 2 is attached to the curved receiving portion 50 by adhesive 51, and thereafter, the clamping clamp 6 is released from the clamped state, as... Figure 4 As shown.

[0163] According to the above installation method, in the imaging device 1, the solid-state imaging element 2 and the infrared absorption filter 3 are mounted on the curved receiving portion 50 of the base 5. The installed solid-state imaging element 2 and infrared absorption filter 3 correspond to the curved shape of the curved receiving portion 50 of the base 5, and are recessed in the incident direction of the incident light L and are curved as a whole.

[0164] (3) Functions and effects

[0165] The imaging device 1 according to the first configuration includes an infrared absorption filter 3 on the light-receiving surface side of the solid-state imaging element 2, such as... Figure 1As shown, the infrared absorption filter 3 is formed using an on-chip process. Furthermore, the solid-state imaging element 2 and the infrared absorption filter 3 are recessed in the incident direction of the incident light L and are bent as a whole.

[0166] According to the imaging device 1 configured as described above, the number of components of the infrared cut-off filter (IRCF) on the device side can be reduced and the reflective surface of the infrared cut-off filter on the device side can be reduced, which makes it possible to effectively suppress or prevent glare or ghosting.

[0167] In other words, the reduction in the number of components allows for a decrease in the manufacturing cost of the imaging device 1. Furthermore, the effective suppression or prevention of glare or ghosting allows for the effective suppression or prevention of ripple.

[0168] Furthermore, according to the imaging device 1 in the first configuration, the infrared absorption filter 3 and the solid-state imaging element 2 are curved, which reduces the dependence of the optical path length in the infrared absorption filter 3 on the image height. This makes it possible to effectively suppress or prevent color shift at the end of the field of view.

[0169] Furthermore, according to the imaging device 1 in the first configuration, even if dust adheres to the light-receiving surface of the solid imaging element 2, the image formation capability of the dust can be reduced.

[0170] (4) Overview of the second configuration of imaging device 1

[0171] Figure 5 An example of a schematic cross-sectional configuration of the main part of the second configuration of the imaging apparatus 1 according to the first embodiment is shown.

[0172] like Figure 5 As shown, similar to the imaging device 1 according to the first configuration, the imaging device 1 includes a solid-state imaging element 2 and an infrared absorption filter 3, and further includes a multilayer film filter 4 that reflects infrared light. The multilayer film filter 4 is disposed between the planarization film 25 and the infrared absorption filter 3.

[0173] The multilayer filter 4 comprises alternating stacked high-refractive-index layers and multiple low-refractive-index layers, and has a specific transmission spectrum. The refractive index of each low-refractive-index layer is lower than that of each high-refractive-index layer. The multilayer filter 4 is formed on the surface of the solid-state imaging element 2 on the arrow-Z side (on the surface of the planarization film 25) by an on-chip process, and is ultimately formed to be in close contact with the surface of the solid-state imaging element 2.

[0174] Figure 6 Examples are shown of the relationship between the various inorganic materials that allow the formation of the multilayer film filter 4 and the refractive index of each inorganic material.

[0175] like Figure 6As shown, the inorganic material that allows the formation of the multilayer film filter 4 is a transparent thin film material. For example, two or more inorganic materials selected from ZnO, ZrO2, Al2O3, TiO2, MgO, SiO2, HfO2, CeO2, Ga2O5, ITO, Nb2O5, Ta2O5, Y2O3, and WO3 can be used. The refractive index of each inorganic material is as follows: Figure 6 As shown. The films of inorganic materials are each formed by one or more methods selected from, for example, vapor deposition, CVD (chemical vapor deposition), and ALD (atomic layer deposition).

[0176] In the first embodiment, for example, TiO2 with a refractive index of 2.28 is used for the high refractive index layer. Furthermore, for example, SiO2 with a refractive index of 1.45 is used for the low refractive index layer.

[0177] Figure 7 Examples of the transmission characteristics of the infrared absorption filter 3 and the multilayer film filter 4 are shown. Figure 7 In the figure, the horizontal axis indicates wavelength [nm], and the vertical axis indicates transmittance [%).

[0178] Curve La indicates the transmittance characteristics of the 16-layer reflective multilayer filter 4. Similarly, curves Lb, Lc, Ld, Le, and Lf indicate the transmittance characteristics of the 18-layer, 20-layer, 22-layer, 24-layer, and 26-layer reflective multilayer filters 4, respectively.

[0179] In contrast, curve Lg indicates the transmittance characteristics of the absorptive multilayer filter 4. When reproducing natural colors that approximate the sensitivity of human vision, the absorptive multilayer filter 4 exhibits ideal transmittance characteristics.

[0180] Note that, as indicated by curves La to Lf, increasing the number of stacked layers in the multilayer filter 4 allows for suppression of ripple in the transmittance characteristics. For a detailed description, refer to Japanese Unexamined Patent Application Publication No. 2004-309934.

[0181] (5) Installation structure and installation method of imaging device 1

[0182] Similar to the imaging device 1 according to the first configuration, the imaging device 1 according to the second configuration passes through the above... Figure 3 and Figure 4 The mounting method shown is used to mount the device on the base 5. That is, in the imaging device 1, the solid-state imaging element 2, the multilayer film filter 4, and the infrared absorption filter 3 are housed in the curved receiving portion 50 of the base 5, and are curved as a whole in the incident direction of the incident light L.

[0183] (6) Functions and effects

[0184] The imaging device 1 according to the second configuration includes a multilayer film filter 4 and an infrared absorption filter 3 on the light-receiving surface side of the solid-state imaging element 2, such as... Figure 5 As shown. The multilayer film filter 4 and the infrared absorption filter 3 are both formed by on-chip process. In addition, the solid-state imaging element 2, the multilayer film filter 4 and the infrared absorption filter 3 are recessed in the incident direction of the incident light L and are bent as a whole.

[0185] According to the imaging device 1 configured as described above, similar effects and functions can be obtained as those obtained according to the imaging device 1 configured in the first way.

[0186] Furthermore, according to imaging device 1, such as Figure 7 As shown, the absorptive multilayer filter 4 utilizes a thin film to enhance the transmittance of visible light. As a result, the number of stacked layers in the absorptive multilayer filter 4 can be reduced.

[0187] Furthermore, according to the imaging device 1, the ripple of the reflective multilayer filter 5 can be suppressed by the absorptive multilayer filter 4, such as by... Figure 7 The part indicated by the symbol A surrounded by a dashed line. In contrast, the floating of the absorptive multilayer filter 4 can be suppressed by the reflective multilayer filter 4.

[0188] [Base 5 Configuration]

[0189] As mentioned above Figure 3 and Figure 4 As shown, the base 5 includes a curved receiving portion 50. The curved shape of the curved receiving portion 50 is formed along the image forming surface of the module lens (not shown). Here, the module lens is positioned relative to... Figure 1 and Figure 5 The optical lens 24 shown corresponds to the lens unit mounted on the imaging device 1 in the direction of arrow -Z. The lens unit includes, for example, an optical lens, an optical component including, for example, a filter, and a mechanical component including, for example, a drive component for moving the focal position of the optical lens.

[0190] The use of a base 5 with this shape reduces the burden of image plane distortion in the design of the modular lens. Therefore, the number of lenses in the modular lens can be reduced, thereby enabling a reduction in the height of the modular lens and a higher resolution.

[0191] Furthermore, the curved receiving portion 50 of the base 5 can be formed into a curved shape in which the normal of the curved surface is consistent with the principal beam axis angle (CRA: principal beam angle) of the module lens.

[0192] According to the base 5 with this shape, even in the case of high image height, the main beam is incident vertically on the solid-state imaging element 2, thereby effectively suppressing sensitivity loss and image quality degradation (such as tilted light mixing) caused by vignetting in the pixel 200P.

[0193] Furthermore, in the imaging device 1, the curved solid-state imaging element 2 can be fixed to the curved receiving portion 50 of the base 5, and the infrared absorption filter 3, which is curved in a similar manner, can be formed on the light receiving surface side of the solid-state imaging element 2.

[0194] According to the imaging device 1 formed as described above, the dependence of optical path difference in the infrared absorption filter 3 on image height can be eliminated, thereby effectively suppressing color shift.

[0195] The solid-state imaging element 2 is fixed to the bending receiving portion 50 of the base 5 without causing cracks. According to physical principles, the thinner semiconductor substrate (Si substrate) 21 of the substrate 20 allows the solid-state imaging element 2 to be more easily shaped into a bending form. Conversely, when handling the solid-state imaging element 2 as a sample, the likelihood of cracking is high.

[0196] Therefore, the thickness of the semiconductor substrate 21 is actually set to be in the range of 10 μm or more and 50 μm or less. Furthermore, the thickness of the semiconductor substrate 21 is preferably set to be in the range of 15 μm or more and 35 μm or less.

[0197] In the bending installation method using the base 5, the degree of difficulty varies widely depending on whether the solid-state imaging element 2 protrudes from the opening of the bending receiving portion 50 (whether the solid-state imaging element 2 is inside or outside the bending receiving portion 50).

[0198] (1) First bending installation method

[0199] Figure 8 This is a step diagram illustrating the first bending mounting method in the case where a portion of the solid-state imaging element 2 protrudes from the bending receiving portion 50. Figure 8 (A) shows an example of the planar configuration of the base 5 before installation. Figure 8 (B) shows an example of the cross-sectional configuration of the base 5 before installation. Figure 8 (C) shows an example of a planar configuration of the solid-state imaging element 2 before installation. Figure 8 (D) shows an example of a planar configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5. Figure 8 (E) shows along Figure 8 The example shown in (D) is a cross-sectional configuration of the imaging device 1 cut by line EE. Figure 8 (F) shows along Figure 8 The example shown in (D) is a cross-sectional configuration of the imaging device 1, which is intercepted by line FF.

[0200] First, such as Figure 8 (A) and Figure 8 As shown in (B), a base 5 is formed. The base 5 includes a curved receiving portion 50.

[0201] At the same time, such as Figure 8 As shown in (C), a solid-state imaging element 2 is formed. An infrared absorption filter 3 is formed on the solid-state imaging element 2, or an infrared absorption filter 3 and a multilayer filter 4 are formed on the solid-state imaging element 2, although detailed illustrations are omitted.

[0202] Next, as Figure 8 (D) to Figure 8 As shown in (F), the solid-state imaging element 2 is mounted in a curved shape on the curved receiving portion 50 of the base 5.

[0203] At this point, viewed from the direction of arrow-Z (hereinafter referred to as "top view") and from the side, a portion of the periphery of the solid-state imaging element 2 extending from the bending housing 50 to the outside bends along the front surface 50A of the base 5. Stress concentration occurs on the solid-state imaging element 2 at the boundary corner 52 between the bending housing 50 and the front surface 50A.

[0204] The semiconductor substrate 21 of the solid-state imaging element 2 was thinned to have a thickness of less than 30 μm, and the mounting condition was verified. As a result, when the radius of curvature of the bending accommodating portion 50 was less than 100 mm, cracks appeared in the semiconductor substrate 21, resulting in a defect in the imaging device 1.

[0205] (2) Second bending installation method

[0206] Figure 9 This is a step diagram showing the second bending mounting method in the case where the solid-state imaging element 2 is completely contained in the bending housing 50. Figure 9 (A) shows an example of the planar configuration of the base 5 before installation. Figure 9 (B) shows an example of the cross-sectional configuration of the base 5 before installation. Figure 9 (C) shows an example of a planar configuration of the solid-state imaging element 2 before installation. Figure 9 (D) shows an example of a planar configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5. Figure 9 (E) shows along Figure 9 The example shown in (D) is a cross-sectional configuration of the imaging device 1 cut by line EE. Figure 9(F) shows along Figure 9 The example shown in (D) is a cross-sectional configuration of the imaging device 1, which is intercepted by line FF.

[0207] First, such as Figure 9 (A) and Figure 9 As shown in (B), a base 5 is formed. The base 5 includes a curved receiving portion 50.

[0208] At the same time, such as Figure 9 As shown in (C), a solid-state imaging element 2 is formed. The solid-state imaging element 2 is sized to allow it to be accommodated in the curved receiving portion 50. Similar to the first curved mounting method, an infrared absorption filter 3 is formed on the solid-state imaging element 2, or an infrared absorption filter 3 and a multilayer filter 4 are formed on the solid-state imaging element 2, although detailed drawings are omitted.

[0209] Next, as Figure 9 (D) to Figure 9 As shown in (F), the solid-state imaging element 2 is mounted in a curved shape on the curved receiving portion 50 of the base 5.

[0210] At this point, viewed from above and from the side, the solid-state imaging element 2 is contained within the curved receiving portion 50, and the solid-state imaging element 2 is completely formed into a curved shape along the curved shape of the curved receiving portion 50. In other words, the periphery of the solid-state imaging element 2 does not reach the boundary corner 52 and does not bend.

[0211] According to the imaging device 1 formed as described above, even when the semiconductor substrate 21 is thinned to have a thickness of 30 μm or less and the radius of curvature of the bending accommodating portion 50 reaches the range of 15 mm or less, no cracks will appear in the semiconductor substrate 21 of the solid-state imaging element 2. This allows for the acquisition of a defect-free imaging device 1.

[0212] (3) Material of base 5

[0213] The base 5 for bending installation is formed of a material that takes into account the heat load during installation and the thermal changes in the market environment. In other words, in order to prevent stress caused by temperature changes on the solid-state imaging element 2, the base 5 is formed of a material that allows the coefficients of thermal expansion of the base 5 and the solid-state imaging element 2 to be as uniform as possible.

[0214] For example, when a Si substrate is used as the semiconductor substrate 21 of a solid-state imaging element 2, the base 5 is formed of Si. Si is optimal because it minimizes thermal stress. Without using Si, a coefficient of thermal expansion close to 4.15 × 10⁻⁶ can be used. -6 The base 5 is formed from a material with a Si thermal expansion coefficient of / ℃.

[0215] Furthermore, when selecting the material for base 5, factors such as ease of processing, material cost, processing cost, base weight, rigidity, and base thinning were considered. Specific examples of materials that can be used for base 5 include inorganic insulators, semiconductor materials, metallic materials, resin materials, and ceramic materials.

[0216] Semiconductor materials include carbon (C), silicon carbide (SiC), etc.

[0217] As a metallic material, one or more metals selected from aluminum (Al), copper (Cu), brass, and titanium (Ti), or alloys comprising one or more metals, can be used. Metallic materials have excellent heat dissipation properties.

[0218] Resin materials include acrylic, polystyrene, polycarbonate, and polypropylene. Resin materials are excellent in terms of cost reduction and weight reduction.

[0219] Ceramic materials include alumina (Al2O3), etc. Ceramic materials are expensive, but they have excellent durability and heat dissipation.

[0220] (4) Schematic configuration of the bending receiving part 50

[0221] In the base 5, the surface structure of the bending receiving portion 50 is important. For example, when a protrusion exists on the bending surface of the bending receiving portion 50, stress concentration is generated on the solid-state imaging element 2 starting from the protrusion, which makes the solid-state imaging element 2 prone to damage.

[0222] Even if the solid-state imaging element 2 is not damaged, the curved shape of the solid-state imaging element 2 is deformed due to the protrusion, which causes the image forming surface of the module lens to deviate from such a deformation amount, thereby resulting in resolution degradation.

[0223] Therefore, the front surface of the curved receiving portion 50 is formed as a smooth front surface without protrusions.

[0224] The smooth front surface can be formed using grinding, lapping, polishing, wheel machining, electrochemical lapping, etc. The front surface of the area of ​​the curved receiving portion 50 that contacts the solid-state imaging element 2 has a maximum roughness / height of at least 1 μm. Preferably, the maximum roughness / height is 0.5 μm or less. More preferably, the maximum roughness / height is 0.1 μm or less.

[0225] Here, the maximum height / roughness is based on the limits specified in Japanese Industrial Standard JIS B0601:2013.

[0226] (5) First configuration and third bending installation method of the bending receiving part 50

[0227] Figure 10This is a step diagram illustrating a third bending mounting method for mounting a solid-state imaging element 2 on a bending receiving portion 50 according to a first configuration. Figure 10 (A) shows an example of the planar configuration of the base 5 before installation. Figure 10 (B) shows an example of the cross-sectional configuration of the base 5 before installation. Figure 10 (C) shows an example of the cross-sectional configuration of the imaging device 1, wherein the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5 by means of the pressure difference caused by decompression. Figure 10 (D) shows an example of the cross-sectional configuration of the imaging device 1, wherein the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5 by means of the pressure difference caused by pressurization.

[0228] First, such as Figure 10 (A) and Figure 10 As shown in (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A ventilation portion 53 is formed at the central portion near the center of the front surface 50A of the base 5, in other words, at the central portion of the curved receiving portion 50. The ventilation portion 53 is formed as a through opening extending from the front surface 50A to the rear surface 50B opposite to the front surface 50A.

[0229] At the same time, such as Figure 9 (C) As shown in the second bending mounting method described above, a solid-state imaging element 2 is formed.

[0230] The solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5 (see...). Figure 10 (C)). Here, the vacuum device 600 is connected to the ventilation section 53 formed in the curved receiving section 50 of the base 5.

[0231] A gas leak-proof membrane 601 is provided on the surface of the solid-state imaging element 2. The vacuum device 600 releases gas from the interior of the cavity sealed by the gas leak-proof membrane 601, the solid-state imaging element 2, and the curved receiving portion 50 through the ventilation section 53. This depressurizes the interior of the cavity, and as... Figure 10 As shown in (C), the solid-state imaging element 2 is bent along the curved shape of the curved receiving portion 50 by a pressure difference, and thus the solid-state imaging element 2 is installed in the curved receiving portion 50.

[0232] In addition, the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5 (see Figure 10 (D)). Here, the nozzle 610 is positioned opposite the curved receiving portion 50 of the base 5 along the direction of arrow-Z.

[0233] The gas leak-proof membrane 601 and the solid-state imaging element 2 are pressurized by gas blown from the nozzle 610. The gas can be, for example, air, an inert gas, etc. The nozzle 610 is connected to a gas generating device (not shown). When air is used as the gas, a compressor is used as the gas generating device.

[0234] like Figure 10 As shown in (D), the solid-state imaging element 2 is bent along the curved shape of the curved receiving portion 50 by a pressure difference, and thus, the solid-state imaging element 2 is installed in the curved receiving portion 50. At this time, the gas in the cavity is released through the ventilation portion 53.

[0235] (6) Second configuration of the curved receiving part 50

[0236] Figure 11 This is a step diagram illustrating a third bending mounting method for mounting a solid-state imaging element 2 on a bending receiving portion 50 according to a second configuration. Figure 11 (A) shows an example of the planar configuration of the base 5 before installation. Figure 11 (B) shows an example of the cross-sectional configuration of the base 5 before installation.

[0237] First, such as Figure 11 (A) and Figure 11 As shown in (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A ventilation portion 53 is formed at a central portion near the center of the front surface 50A of the base 5, in other words, at the central portion of the curved receiving portion 50. Similar to the curved receiving portion 50 according to the first configuration, the ventilation portion 53 is formed as a through opening extending from the front surface 50A to the rear surface 50B.

[0238] Furthermore, a porous material 54 is formed in an embedded state within the ventilation section 53. The porous material 54 is a material with numerous fine pores. More specifically, for example, the porous material 54 includes fine powders of Al2O3, stainless steel (SUS), etc., sintered in a permeable state.

[0239] At the same time, such as Figure 9 (C) As shown in the second bending mounting method described above, a solid-state imaging element 2 is formed.

[0240] With the above Figure 10 Similar to the third bending mounting method shown in (C), the solid-state imaging element 2 is bent along the bending shape of the bending receiving portion 50 by means of this base 5 due to the pressure difference caused by decompression, thereby allowing the solid-state imaging element 2 to be mounted in the bending receiving portion 50.

[0241] In addition, with the above Figure 10Similar to the third bending mounting method shown in (D), the solid-state imaging element 2 bends along the bending shape of the bending receiving portion 50 due to the pressure difference caused by the pressurization, thereby allowing the solid-state imaging element 2 to be mounted in the bending receiving portion 50.

[0242] (7) The third configuration and the fourth bending installation method of the bending receiving part 50

[0243] Figure 12 This is a step diagram describing a fourth bending mounting method for mounting the solid-state imaging element 2 on a bending receiving portion 50 according to a third configuration. Figure 12 (A) shows an example of the planar configuration of the base 5 before installation. Figure 12 (B) shows an example of the cross-sectional configuration of the base 5 before installation. Figure 12 (C) shows an example of a cross-sectional configuration when the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5. Figure 12 (D) shows an example of a cross-sectional configuration of an imaging device 1 in which the solid-state imaging element 2 is mounted on the curved receiving portion 50 of the base 5.

[0244] First, such as Figure 12 (A) and Figure 12 As shown in (B), a base 5 is formed. The base 5 includes a curved receiving portion 50. A recess 55 is formed around the central portion near the center of the front surface 50A of the base 5. Viewed from the side, the recess 55 is formed as a groove shape that is further recessed from the surface of the curved receiving portion 50 in the incident direction of the incident light L. Furthermore, the recess 55 is formed as an annular shape when viewed from above, although the shape of the recess 55 is not particularly limited thereto. The recess 55 absorbs excess portions of the adhesive 51 formed in the curved receiving portion 50 to effectively suppress or prevent the adhesive 51 from overflowing between the curved receiving portion 50 and the solid-state imaging element 2.

[0245] At the same time, such as Figure 9 (C) As shown in the second bending mounting method described above, a solid-state imaging element 2 is formed.

[0246] like Figure 12 As shown in (C), adhesive 51 is formed in the curved receiving portion 50 of the base 5, and in addition, solid-state imaging element 2 is placed on the curved receiving portion 50.

[0247] The above Figure 3 The clamping fixture 6 shown is used to form the solid-state imaging element 2 in a curved shape along the curved shape of the curved receiving portion 50 by pressing the end 60 of the clamping fixture 6 against the solid-state imaging element 2 (see...). Figure 12(D)). After the solid-state imaging element 2 is attached to the curved receiving portion 50 by the adhesive 51, the clamping force applied by the clamping clamp 6 is released. Thus, an imaging device 1 with the solid-state imaging element 2 mounted on the base 5 is formed.

[0248] (8) Fourth configuration of the bending receiving part 50

[0249] Figure 13 This is a step diagram describing the bending mounting method of mounting the solid-state imaging element 2 on the bending receiving portion 50 according to the fourth configuration. Figure 13 (A) shows an example of the cross-sectional configuration of the base 5 and the solid-state imaging element 2 before installation. Figure 13 (B) shows an example of the cross-sectional configuration of the main parts of the base 5 and the solid-state imaging element 2 in an enlarged manner.

[0250] like Figure 13 (A) and Figure 13 As shown in (B), a step portion 56 is formed in the curved receiving portion 50 of the base 5. The step portion 56 is formed as a positioning guide that is adjacent to the peripheral end of the solid-state imaging element 2 placed in the curved receiving portion 50 to perform positioning of the solid-state imaging element 2 relative to the curved receiving portion 50.

[0251] According to the base 5 configured as described above, the positioning of the solid-state imaging element 2 relative to the curved receiving portion 50 can be easily and accurately performed by using the step portion 56.

[0252] (9) Fifth configuration of the bending accommodating part 50

[0253] Figure 14 An example of a planar configuration of the base according to the fifth configuration is shown.

[0254] like Figure 14 As shown, a mark 57 is formed in the peripheral portion of the front surface 50A of the base 5. The mark 57 is formed as an alignment mark to perform positioning of the curved receiving portion 50 of the base 5 and the solid-state imaging element 2. For example, the positioning of the mark 57 is performed relative to the contour shape of the solid-state imaging element 2.

[0255] According to the base 5 configured as described above, the use of marker 57 makes it easy and accurate to position the solid-state imaging element 2 relative to the curved receiving portion 50.

[0256] Note that in the base 5, the ventilation portion 53, recess 55, or step portion 56 that contacts the solid-state imaging element 2 has a rounded corner shape with rounded chamfers at the corners. In the area with the rounded corner shape, stress concentration that occurs on the solid-state imaging element 2, which is formed in a curved shape and subjected to stress, can be effectively suppressed or prevented.

[0257] [Overview of the method for manufacturing the solid-state imaging element 2 and the method for mounting the imaging device 1]

[0258] Next, an overview of the method for manufacturing the solid-state imaging element 2 according to the first configuration of the imaging device 1 and the method for mounting the imaging device 1 will be described.

[0259] Figures 15 to 17 Each example is shown as a cross-section in the steps of describing the method for manufacturing the solid-state imaging element 2. Figure 18 An example of a cross-sectional configuration of an imaging device 1 with the solid-state imaging element 2 mounted on a base 5 is shown.

[0260] The method for manufacturing a solid-state imaging element 2 according to the first configuration of the imaging device 1 is summarized below. First, a wiring layer 22 is formed on a semiconductor substrate 21 including a photoelectric conversion region 200. Thereby, a substrate 20 (see...) is formed. Figure 15 ).

[0261] Subsequently, as Figure 15 As shown, an optical filter 23 is formed on the light-receiving surface side of the substrate 20, and an optical lens 24 is formed. When the optical lens 24 is formed, the solid-state imaging element 2 is basically completed.

[0262] like Figure 16 As shown, a planarization film 25 is formed on an optical lens 24.

[0263] After that, as Figure 17 As shown, an infrared absorption filter 3 is formed on a solid-state imaging element 2, wherein a planarization film 25 is interposed therebetween.

[0264] The method for installing imaging device 1 is as follows.

[0265] As described above, a base 5 including a curved receiving portion 50 is formed (see above). Figure 18 ).

[0266] Subsequently, as Figure 18 As shown, a solid-state imaging element 2, equipped with an infrared absorption filter 3, is mounted in a bent state in the bent receiving portion 50 of the base 5. Thus, an imaging device 1 is completed, which, as a cavity-free CSP (chip-scale package), has a focusing structure including an on-chip lens and a planarization film on the on-chip lens, the on-chip lens comprising a high-refractive-index material and the planarization film comprising a low-refractive-index material.

[0267] [System Configuration of Imaging Device 1]

[0268] Figure 19 An example of the system configuration of imaging device 1 is shown.

[0269] like Figure 19As shown, the imaging device 1 includes a pixel array unit PA, a vertical driver VD, a column signal processor CS, and a controller CC.

[0270] The pixel array PA includes a plurality of pixels 200P arranged in a two-dimensional lattice. As described above, each pixel 200P includes a photoelectric conversion region 200 (see, for example, see...). Figure 1 Furthermore, the photoelectric conversion region 200 converts the incident light L into an electrical signal (charge).

[0271] Here, pixel 200P includes pixel circuitry (not shown) (see Figure 20 The pixel circuit generates an image signal based on the electrical signal generated by the photoelectric conversion region 200. The generation of the image signal is controlled by a control signal generated by the vertical driver VD, which will be described later.

[0272] In the pixel array PA, multiple signal lines VL and multiple signal lines HL are arranged in an XY matrix.

[0273] Each signal line VL is a signal line that transmits control signals for the pixel circuitry in pixel 200P. Each signal line VL is configured for a corresponding row in the row of pixel array PA, and is routed together for pixels 200P arranged in the corresponding row.

[0274] Each signal line HL is a signal line that transmits the image signal generated by the pixel circuit of pixel 200P. Each of the signal lines HL is arranged in a corresponding column of the pixel array section PA, and is wired together for the pixels 200P arranged in the corresponding column.

[0275] The vertical driver VD generates control signals for the pixel circuitry of pixel 200P. The vertical driver VD transmits the generated control signals to pixel 200P via signal line VL.

[0276] The column signal processor CS processes the image signal generated by pixel 200P. The column signal processor CS also processes the image signal transmitted from pixel 200P via signal line HL. An example of processing in the column signal processor CS includes analog-to-digital conversion, where the image signal, as an analog signal generated by pixel 200P, is converted into a digital signal. The image signal processed by the column signal processor CS is output as the image signal generated in the imaging device 1.

[0277] The controller CC controls the entire imaging device 1. The controller CC generates and outputs control signals for controlling the vertical driver VD and the column signal processor CS, and controls the imaging device 1. The control signals generated by the controller CC are transmitted to the vertical driver VD through signal line S1 and to the column signal processor CS through signal line S2.

[0278] [Circuit configuration for 200P pixels]

[0279] Figure 20 An example of the circuit configuration of the 200P pixels of the solid-state imaging element 2 is shown.

[0280] like Figure 20 As shown, the pixel 200P of the solid-state imaging element 2 includes a photoelectric conversion region 200, a charge holding section C, and transistors T1 to T4. Here, the charge holding section C and transistors T1 to T4 constitute a pixel circuit.

[0281] The photoelectric conversion region 200 is configured with a photodiode comprising an anode region and a cathode region. The anode region is grounded. The cathode region is electrically coupled to one of the main electrodes of the transistor T1.

[0282] The charge holding section C is composed of a capacitor that holds the charge generated by photoelectric conversion in the photoelectric conversion region 200. One electrode of the charge holding section C is electrically coupled to the cathode region. The other electrode of the charge holding section C is grounded.

[0283] Transistors T1 to T4 are each formed as an Insulated Gate Field Effect Transistor (IGFET), which includes a pair of main electrodes and a gate electrode.

[0284] Transistor T1 is a transfer transistor that transfers the charge generated by photoelectric conversion in the photoelectric conversion region 200 to the charge holding section C. Transistor T2 is a reset transistor that resets the charge held by the charge holding section C. Transistor T3 is an amplification transistor that generates an image signal based on the charge held by the charge holding section C. Transistor T4 outputs the image signal to the signal line HL (see [link]). Figure 19 (Selection transistor)

[0285] The other main electrode of transistor T1 is electrically coupled to an electrode of the charge holding section C, and is also electrically coupled to one of the main electrodes of transistor T2 and the gate electrode of transistor T3. The gate electrode of transistor T1 is electrically coupled to the transfer signal line TR.

[0286] The other main electrode of transistor T2 is electrically coupled to the power supply line Vdd. The gate electrode of transistor T2 is electrically coupled to the reset signal line RST.

[0287] One main electrode of transistor T3 is electrically coupled to the power supply line Vdd. The other main electrode of transistor T3 is electrically coupled to one main electrode of transistor T4.

[0288] The other main electrode of transistor T4 is electrically coupled to signal line HL (see Figure 19The gate electrode of transistor T4 is electrically coupled to the select signal line SEL.

[0289] Transfer signal line TR, reset signal line RST, and select signal line SEL; configuration signal line VL (see...) Figure 19 ).

[0290] [Specific configuration of the 200P pixel count of solid-state imaging element 2]

[0291] Figure 21 An example of a specific cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 3 is shown.

[0292] Here, Figure 21 The solid-state imaging element 2 shown is a back-illuminated solid-state imaging element. Therefore, the first surface 21A of the semiconductor substrate 21 of the substrate 20 is disposed on the side in the -Z direction of the arrow. The second surface 21B of the semiconductor substrate 21 is disposed on the opposite side in the -Z direction of the arrow.

[0293] As described above, the infrared absorption filter 3 is disposed on the solid-state imaging element 2, and the pixel 200P includes the infrared absorption filter 3. That is, the pixel 200P includes the infrared absorption filter 3, the planarization film 25, the anti-reflection film 241, the optical lens 24, the optical filter 23, the protective film 232, the light-shielding film 231, the insulating film 206, the fixed charge film 205, the photoelectric conversion region 200, the element separation region 201, the semiconductor substrate 21, and the wiring layer 22.

[0294] As described above, the semiconductor substrate 21 is formed of, for example, a Si semiconductor substrate. A photoelectric conversion region 200 is provided in the semiconductor substrate 21 for each pixel 200P. Furthermore, at least the transistor (transfer transistor) T1 of the aforementioned pixel circuit is provided in the semiconductor substrate 21 (see [link to documentation]). Figure 20 Here, the other transistors T2 to T4 of the pixel circuit are formed in a substrate (not shown) that is disposed separately from the substrate 20.

[0295] (1) Configuration of photoelectric conversion region 200

[0296] A photoelectric conversion region 200 is formed over the entire thickness of the semiconductor substrate 21. More specifically, the photoelectric conversion region 200 includes an n-type semiconductor region of a first conductivity type and a p-type semiconductor region of a second conductivity type, which is configured to face both the first surface 21A and the second surface 21B of the semiconductor substrate 21. That is, the photoelectric conversion region 200 is configured as a pn junction photodiode. The p-type semiconductor region also serves as a hole charge storage region and is capable of effectively suppressing dark current.

[0297] (2) Configuration of transistor T1

[0298] The p-type semiconductor region on the second surface 21B of the semiconductor substrate 21 also serves as a p-type well region. A transistor T1 is disposed in the p-type well region, although it is not shown here.

[0299] The pair of main electrodes of transistor T1 are source and drain regions formed from n-type semiconductor regions, respectively, and are formed in a p-type well region. A gate insulating film is formed on the surface (second surface 21B) between the pair of main electrodes in the p-type well region. Furthermore, a gate electrode is formed in the gate insulating film.

[0300] (3) Configuration of optical lens 24

[0301] Optical lens 24 focuses the incident light L onto the photoelectric conversion region 200. This allows the vignetting of the incident light L to be effectively suppressed by the light-shielding film 231 disposed between pixels 200P.

[0302] Here, an optical lens 24 is set for each 200P pixel.

[0303] The optical lens 24 is formed from one or more organic materials selected from, for example, styrene-based resins, acrylic resins, styrene-acrylic resins, and siloxane resins. Alternatively, the optical lens 24 can be formed by dispersing titanium dioxide particles in the aforementioned organic materials or polyimide resins.

[0304] Furthermore, the optical lens 24 can be formed from inorganic materials such as silicon nitride (SiN) or silicon oxynitride (SiON).

[0305] Furthermore, an anti-reflective coating 241 with a refractive index different from that of the optical lens 24 is formed on the surface of the optical lens 24. The anti-reflective coating 241 can effectively suppress or prevent the reflection of incident light L on the surface of the optical lens 24.

[0306] (4) Configuration of light-shielding film 231

[0307] A light-shielding film 231 is disposed near the semiconductor substrate 21 rather than the optical lens 24 in the region at the boundary between pixels 200P. In other words, the light-shielding film 231 is arranged between the optical filters 23. The light-shielding film 231 blocks stray light of incident light L leaking from adjacent pixels 200P in the region at the boundary between pixels 200P.

[0308] Using a light-blocking material for the light-shielding film 231 is sufficient. However, the light-shielding film 231 is formed from a material with strong light-blocking properties and that can be finely processed. Here, an example of fine processing includes precise processing through etching.

[0309] The light-shielding film 231 is formed of one or more metallic materials, such as those selected from Al, tungsten (W), and Cu. The light-shielding film 231 may be formed of one or more metallic materials selected from silver (Ag), gold (Au), platinum (Pt), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), iron (Fe), and tellurium (Te), or an alloy material including any of these metallic materials.

[0310] In addition, a light-shielding film 231 can be formed by stacking multiple layers of the above-mentioned materials.

[0311] In addition, to improve adhesion to the underlying insulating film 206, a barrier metal (not shown) can be formed between the light-shielding film 231 and the insulating film 206.

[0312] For the barrier metal, for example, a metallic material selected from Ti, tantalum (Ta), W and cobalt (Co), or an alloy material including a metallic material, a nitride material including a metallic material, an oxide material including a metallic material, or a carbide material including a metallic material can be used.

[0313] Furthermore, the light-shielding film 231 can be used as a light-shielding film for determining the optical black level of a pixel (not shown). Additionally, the light-shielding film 231 can be used as a light-shielding film to prevent noise from being generated in the peripheral circuit area.

[0314] The light-shielding film 231 is preferably grounded. This grounding structure allows all the light-shielding films 231 to be electrically coupled to each other, and allows the light-shielding films 231 to be grounded in areas outside the effective area. According to such a structure, even if plasma damage occurs due to accumulated charge during processing in the manufacturing process, damage and destruction of the light-shielding film 231 can be effectively suppressed.

[0315] (5) Configuration of optical filter 23

[0316] Optical filter 23 is configured for each pixel 200P or for every two or more pixels 200P, and is a color filter that allows incident light L within a specific wavelength region to pass through. For example, optical filter 23 is a color filter for colored light selected from red, green, blue, cyan, magenta, and yellow light.

[0317] Optical filters 23 are formed by adding pigments or dyes to resin materials.

[0318] Furthermore, considering the color reproducibility of the spectroscopic spectrum or the sensor sensitivity specifications, the optical filter 23 can be formed with a different film thickness for each color.

[0319] (6) Configuration of insulating film 206

[0320] An insulating film 206 is disposed between the optical filter 23 and the fixed charge film 205 formed on the first surface 21A of the semiconductor substrate 21. The insulating film 206 can effectively suppress the degradation of dark characteristics. In addition, the refractive index of the insulating film 206 is set to be lower than that of the fixed charge film 205, thereby effectively suppressing reflection.

[0321] For the insulating film 206, for example, silicon oxide (SiO2) and composite materials containing SiO2 as the main component can be used. Specific examples of composite materials include SiON and silicon carbide (SiOC).

[0322] (7) Configuration of protective film 232

[0323] A protective film 232 is provided between the optical filter 23 and the light-shielding film 231. The protective film 232 prevents the formation of a mixed layer between the resin material of the optical filter 23 and the metal material of the light-shielding film 231, or prevents changes in the mixed layer caused by reliability testing.

[0324] As the protective film 232, similar to the insulating film 206, SiO2 and composite materials containing SiO2 as the main component can be used, for example.

[0325] (8) Configuration of fixed charge film 205

[0326] A fixed charge film 205 is disposed on the first surface 21A of the semiconductor substrate 21. The fixed charge film 205 has a negative fixed charge due to the oxygen molecule (O2) dipole and enhances the pinning effect.

[0327] The fixed charge film 205 is formed from, for example, one or more oxide or nitride materials selected from hafnium (Hf), Al, zirconium (Zr), tantalum (Ta), and Ti. The fixed charge film 205 is formed by CVD, sputtering, or ALD. ALD is preferred. In this case, SiO2 with reduced interface states can be formed in the same step during the film formation of the fixed charge film 205.

[0328] In addition, the fixed charge film 205 can be formed by one or more oxide or nitride materials selected from lanthanum (La), cerium (Ce), neodymium (Nd), samarium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), thulium (Tm), ytterbium (Yb), lutetium (Lu), and yttrium (Y).

[0329] In addition, hafnium oxynitride (HfON) or aluminum oxynitride (AlON) can be used as the fixed charge film 205.

[0330] Furthermore, an amount of Si or nitrogen (N) that does not impair the insulating properties can be added to the fixed charge film 205. In the fixed charge film 205 formed in this manner, heat resistance and other properties can be improved.

[0331] By controlling the thickness of the fixed charge film 205 or by stacking multiple layers, the fixed charge film 205 can effectively prevent reflection from the semiconductor substrate 21 with a high refractive index.

[0332] (9) Configuration of component separation area 201

[0333] An element separation region 201 is provided between adjacent pixels 200P in each of the arrow-X and arrow-Y directions. The element separation region 201 electrically and optically separates pixel 200P from another pixel adjacent to it.

[0334] The component separation region 201 is formed, for example, by a P-type semiconductor region and grounded thereon.

[0335] Optionally, the component separation region 201 can be configured by including trenches and embedding members. Trenches are formed in the semiconductor substrate 21, and embedding members are embedded in the trenches. The embedding members use one or more materials selected from the fixed charge film 205 and the insulating film 206 described above. By using the insulating film 206 in the component separation region 201 of the embedding member, crosstalk caused by, for example, the rolling of electrons as charge carriers can be blocked by the insulating film 206, and optical crosstalk caused by interface reflection due to refractive index differences can be effectively suppressed.

[0336] (10) Configuration of wiring layer 22

[0337] Wiring layer 22 includes multiple wirings 221. Each wiring 221 transmits an image signal generated by pixel 200P. Additionally, each wiring 221 transmits signals to be provided to or from pixel circuitry. Specifically, each wiring 221 is used for the aforementioned purposes. Figure 20 The signal line VL, signal line HL, or power line Vdd are shown.

[0338] Through-hole plugs (through wiring) allow electrical coupling, for example, between wirings 221 in different layers and between wirings 221 and pixel circuitry, although in Figure 21 Detailed illustrations are omitted.

[0339] Each of the wirings 221 is formed using, for example, one or more metallic materials selected from Al and Cu. Furthermore, the through-hole plug is formed using, for example, one or more metallic materials selected from W and Cu.

[0340] For example, an insulating material such as SiO2 is used for the insulating film 222 of the wiring layer 22.

[0341] (11) Configuration of planarization film 25

[0342] The planarization film 25 is formed to cover the optical lens 24 and reduce the height difference shape caused by the optical lens 24. That is, the surface of the planarization film 25 is planarized.

[0343] For example, the planarization film 25 is formed by one or more resin materials selected from siloxane resins, styrene resins, acrylic resins, and styrene-acrylic copolymer resins. Alternatively, the planarization film 25 can be formed from, for example, organic resin materials, such as F-containing materials of the selected resin material or resin materials internally filled with microspheres having a refractive index lower than that of the resin material.

[0344] Furthermore, the planarization film 25 can be formed from one or more inorganic materials selected from SiO2, niobium oxide (Nb2O5), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), hafnium oxide (HfO2), SiN, SiON, SiC, SiOC, SiNC, and zirconium oxide (ZrO2). Alternatively, the planarization film 25 can be formed from a stacked structure of multiple layers of the selected inorganic material. The inorganic material film is formed by, for example, CVD or sputtering.

[0345] When using such inorganic materials, for example, chemical mechanical polishing (CMP) is used to planarize the film 25.

[0346] (12) Configuration of infrared absorption filter 3

[0347] Figure 22 This is a diagram showing the chemical formula of the organic material included in the infrared absorption filter 3.

[0348] Figure 22 The organic material shown includes cyanine pigments and is used in infrared absorption filter 3.

[0349] Here, R1 and R2 are each a chain or cyclic alkyl group; a group having one or two or more hydrogen atoms in the alkyl group substituted with at least one functional group selected from halogen, alkoxy, alkanoyloxy, amino, thiol, and mercapto; a group having at least one reactive group selected from vinyl, acrylate, carbonyl, carboxyl, alkenyl, alkenoxy, alkoxycarbonyl, nitrile, carboxyl, carbonyl, sulfonyl, aminosulfonyl, carbamoyl, benzoyloxy, and cyano groups introduced at the end of the alkyl group or at a position two or more carbon atoms away from the indoline ring; or phenyl or benzyl, and may be the same as or different from each other. Furthermore, X- represents an anion.

[0350] Note that for this type of organic material, refer to Japanese Unexamined Patent Application Publication No. 2015-203863.

[0351] (13) Configuration of other substrates 250

[0352] Return to reference Figure 21 As schematically shown, another substrate 250 is disposed on the wiring layer 22 of the substrate 20. For example, the above-mentioned Figure 20 The pixel circuit shown and the above Figure 19 The logic circuitry shown, including, for example, a vertical driver VD, a column signal processor CS, and a controller CC, is disposed in another substrate 250. Like substrate 20, the other substrate 250 includes a semiconductor substrate and a wiring layer. Substrates 20 and the other substrate 250 are electrically and mechanically coupled to each other, for example, via a Cu-Cu junction.

[0353] In the imaging device 1 configured as described above, the substrate 20 and another substrate 250 can be stacked vertically in the arrow-Z direction, thereby reducing the size of the imaging device 1.

[0354] Furthermore, another substrate 250 can be formed as a supporting substrate to reinforce the substrate 20. In this case, for example, the substrate 20 and the other substrate 250 are joined together by plasma bonding or by using an adhesive material.

[0355] [Method for manufacturing solid-state imaging element 2]

[0356] Figures 23A to 23O Examples of cross-sections are shown for each step of the method for manufacturing the solid-state imaging element 2 according to the first embodiment. The method for manufacturing the solid-state imaging element 2 is as follows.

[0357] In the solid-state imaging element 2, a photoelectric conversion region 200 is formed in the region where the pixel 200P of the semiconductor substrate 21 will be formed, and an element separation region 201 is formed around the side surface of the photoelectric conversion region 200. The photoelectric conversion region 200 is formed by a pn junction, which includes an n-type semiconductor region disposed over the entire thickness direction of the semiconductor substrate 21 and a p-type semiconductor region that contacts the n-type semiconductor region and faces both the first surface 21A and the second surface 21B of the semiconductor substrate 21.

[0358] First, a photoelectric conversion region 200 shared by multiple pixels 200P is formed in a semiconductor substrate 21 (see [link]). Figure 23A Subsequently, a mask 2001 with openings between pixels 200P is formed on the second surface 21B side of the semiconductor substrate 21 (see...). Figure 23A For example, resist was used in mask 2001.

[0359] like Figure 23A As shown, a device separation region 201 is formed by introducing p-type impurities into a semiconductor substrate 21 using a mask 2001. For example, ion implantation is used to introduce the impurities. When the device separation region 201 is formed, photoelectric conversion regions 200 are formed that are individually separated from each other by the device separation region 201.

[0360] Here, although not shown, at least the transistor T1 of the pixel circuit is formed on the second surface 21B of the semiconductor substrate 21 (see [reference]). Figure 20 As described above, transistor T1 includes a pair of main electrodes, a gate insulating film, and a gate electrode.

[0361] Next, a wiring layer 22 is formed on the second surface 21B side of the semiconductor substrate 21 (see...). Figure 23B As described above, wiring layer 22 includes multiple wirings 221, an insulating film 222, and via plugs (not shown). The foremost surface of wiring layer 22 is planarized, for example, by CMP (Continuous Metallurgy Processing).

[0362] like Figure 23B As shown, the semiconductor substrate 21 is vertically flipped, and the semiconductor substrate 21 is bonded to another substrate 250 via a wiring layer 22 interposed therebetween. Here, the other substrate 250 serves as a support substrate to enhance the semiconductor substrate 21. The other substrate 250 is bonded to the wiring layer 22, for example, by plasma bonding.

[0363] Note that the wiring layer 22 and the other substrate 250 are omitted in the following description.

[0364] like Figure 23C As shown, the semiconductor substrate 21 is thinned by polishing the first surface 21A side. Thinning is performed, for example, by wet etching or dry etching, followed by further processing using CMP until the desired thickness is achieved. When only the visible light region is included, the semiconductor substrate 21 is formed to have a thickness of, for example, more than 2 μm and less than 6 μm.

[0365] like Figure 23D As shown, a fixed charge film 205 and an insulating film 206 are sequentially formed on the first surface 21A of the semiconductor substrate 21. The fixed charge film 205 and the insulating film 206 are each formed using, for example, CVD, sputtering, or ALD.

[0366] When the fixed charge film 205 is formed using the ALD method, good step coverage is achieved at the atomic level in the portion of the fixed charge film 205 that contacts the first surface 21A of the semiconductor substrate 21.

[0367] For example, SiO2 is used for the insulating film 206, and similarly, ALD is used to form the insulating film 206. In this case, the thickness of the insulating film 206 is formed to be at least 20 nm and less than 50 nm, because thinner insulating films 206 are more prone to film peeling caused by bubbling.

[0368] Next, a mask 2002 is formed on the insulating film 206 (see...). Figure 23E For example, a resist is used in mask 2002. Mask 2002 is formed to cover the pixel array portion PA (see...). Figure 23E (Left side). Furthermore, the mask 2002 has an opening 2002H at a location overlapping with the element separation region 201 in the region outside the pixel array portion PA (see...). Figure 23E (Right side).

[0369] like Figure 23E As shown, the insulating film 206 and the fixed charge film 205 exposed from the opening 2002H are removed using a mask 2002 to form the opening 205H. The opening 205H exposes the element separation region 201 in the area outside the pixel array portion PA. The opening 205H is formed using anisotropic etching or wet etching. Although not shown, the opening 205H is formed to have a width of several micrometers when viewed from above.

[0370] After that, remove the mask 2002.

[0371] Note that, as described later... Figure 23F and Figure 23G In, such as Figure 23E The image shows the pixel array section PA and the area outside the pixel array section PA.

[0372] like Figure 23F As shown, a light-shielding film 231 is formed on an insulating film 206. The light-shielding film 231 is formed from the aforementioned metal or alloy material by CVD or sputtering. A portion of the light-shielding film 231 is coupled through an opening 205H to an element separation region 201 in the area outside the pixel array section PA.

[0373] When the component separation region 201 is grounded, for example, plasma damage generated during the processing of the light-shielding film 231 can be effectively suppressed.

[0374] like Figure 23G As shown, in the pixel array section PA, the light-shielding film 231 undergoes patterning processing. That is, the light-shielding film 231 in the region overlapping with the photoelectric conversion region 200 is removed. Additionally, although not shown, the light-shielding film 231 formed in the pad section, scribing section, etc., is removed in the same process. For example, anisotropic etching is used for patterning processing. Furthermore, residues are removed by chemical washing as needed.

[0375] like Figure 23H As shown, a protective film 232 is formed on a light-shielding film 231. A transparent inorganic film, such as SiO2, is used for the protective film 232.

[0376] The formation of the protective film 232 effectively suppresses or prevents deformation caused by contact between the film (e.g., the resin material of the color filter 23) disposed on the light-shielding film 231 and the metal material of the light-shielding film 231 below. Furthermore, in cases where the film on the protective film 232 needs to be separated due to exposure problems or the formation of a non-standard color filter, the protective film 232 protects the metal of the light-shielding film 231 from the effects of separation chemical solutions, etc.

[0377] like Figure 23I As shown, the optical filter 23 is formed on the protective film 232. For example, a photoresist film comprising a photosensitizer and a pigment or dye is formed by spin coating, and the film is exposed, developed, and post-baked to form the optical filter 23.

[0378] In addition, when using dye resist, ultraviolet (UV) curing or additional baking can be performed to form optical filter 23.

[0379] like Figure 23J As shown, the lens material 240 forms the optical lens 24. The optical lens 24 uses the refractive index difference with the planarization film 25 to focus light; therefore, a material with a high refractive index is used in the lens material 240.

[0380] For example, organic resin materials such as styrene-based resins (refractive index n: approximately 1.6), acrylic-based resins (n: approximately 1.5), and styrene-acrylic copolymer-based resins (n: 1.5 to 1.6) are used in lens material 240. The film of the organic resin material is formed by spin coating.

[0381] Alternatively, an organic-inorganic mixture in which TiO fine particles are dispersed in the aforementioned organic resin or polyimide resin can be used for lens material 240. Alternatively, inorganic materials such as SiN (n: approximately 1.9 to 2) or SiON (n: approximately 1.45 to 1.9) can be used for lens material 240. The film of the inorganic material is formed by, for example, CVD.

[0382] like Figure 23K As shown, a mask 2003 is formed on lens material 240. A photoresist is applied to the mask 2003. The mask 2003 is formed into a lens shape through corresponding exposure and reflow steps.

[0383] like Figure 23LAs shown, the shape of the mask 2003 is transferred to the lens material 240 using the mask 2003 to form the optical lens 240. For example, anisotropic etching is used to transfer the shape.

[0384] Subsequently, as Figure 23M As shown, an anti-reflective coating 241 is formed on the surface of the optical lens 24. The refractive index of the anti-reflective coating 241 is different from that of the optical lens 24. The anti-reflective coating 241 can improve the light receiving sensitivity and further enable effective suppression or prevention of glare.

[0385] More specifically, for example, SiON with a refractive index of approximately 1.45 to 1.9 is used for the antireflective coating 241, and the coating of the antireflective coating 241 is performed in an antireflective design conforming to the 4 / λ rule. Furthermore, the antireflective coating 241 is not limited to a single layer and can be formed from multiple layers.

[0386] The formation of the anti-reflective coating 241 reduces the area of ​​the flat, ineffective region at the diagonal portion of the curved surface where the optical lens 24 is not formed.

[0387] like Figure 23M As shown, a planarization film 25 is formed on the optical lens 24. As described above, the planarization film 25 is formed of organic or inorganic materials, etc.

[0388] When an inorganic material is used as the planarization film 25, the surface of the planarization film 25 is formed with a height difference shape that conforms to the shape of the optical lens 24. Therefore, the surface of the planarization film 25 is planarized, for example, by a CMP method. At this time, the optical lens 24 is formed to be thick, which prevents the upper end of the optical lens 24 from being polished.

[0389] like Figure 230 As shown, the infrared absorption filter 3 is formed on the planarization film 25. The infrared absorption filter 3 is formed, for example, from an organic material including cyanine pigment, binder resin, etc. The infrared absorption filter 3 is formed by coating using one or more methods selected from spin coating, die coating, slot coating, and dispensing.

[0390] When such a series of steps are completed, the method for manufacturing the solid-state imaging element 2 and the infrared absorption filter 3 is finished.

[0391] [Pressure-type bending installation method]

[0392] Figure 24 An example of the cross-sectional configuration of a solid-state imaging element 2 and an infrared absorption filter 3 for use in a press-type bending mounting method is shown. Figure 25A An example of a cross-section is shown in the first step of the pressing-type bending installation method. Figure 25B and Figure 25CEach example shows a cross-section from the second step. Figure 26A A schematic cross-sectional view of the clamping fixture 6, including a step in the pressing-type bending installation method, is shown. Figure 26B An example of the base 5, solid-state imaging element 2, and infrared absorption filter 3 as viewed from an inclined direction is shown.

[0393] The pressing-type bending installation method is as follows.

[0394] First, such as Figure 24 As shown, a solid-state imaging element 2 including an infrared absorption filter 3 is formed. The detailed configuration of the infrared absorption filter 3 and the solid-state imaging element 2, as well as the method of manufacturing the infrared absorption filter 3 and the solid-state imaging element 2, are described above.

[0395] Next, prepare the base 5, and place the solid-state imaging element 2, including the infrared absorption filter 3, at a position corresponding to the curved receiving portion 50 of the base 5 (see...). Figure 25A The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of the module lens (not shown).

[0396] Furthermore, adhesive 51 is formed in the curved receiving portion 50. Adhesive 51 can be applied to the solid-state imaging element 2 on the second surface 21B side.

[0397] Here, the recess 55 can be formed in the curved receiving portion 50 of the base 5 (see...). Figure 12 The recess 55 effectively inhibits or prevents the overflow of the adhesive 51. Furthermore, the stepped portion 56 may be formed in the curved receiving portion 50 (see...). Figure 13 The stepped portion 56 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2. Furthermore, a mark 57 can be formed in the base 5 (see...). Figure 14 Marker 57 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2.

[0398] like Figure 25A As shown, the clamping fixture 6 is placed on the curved receiving portion 50 of the base 5, with the solid-state imaging element 2 and the infrared absorption filter 3 interposed therebetween, and the clamping fixture 6 initiates the pressing and mounting process. Figure 25A and Figure 26A As shown, the clamping clamp 6 is provided with an end 60, which has a curved shape protruding on the opposite side of the arrow-Z direction (in the incident direction of the incident light L).

[0399] Here, a protective film can be inserted between the infrared absorption filter 3 and the end 60 of the clamping fixture 6. In this case, the protective film can effectively suppress or prevent the appearance of marks on the surface of the infrared absorption filter 3 or the solid-state imaging element 2.

[0400] Alternatively, such as Figure 26A and Figure 26B As shown, a bending sensor 65 can be used instead of a protective film. When the bending sensor 65 is used, appropriate stress monitoring can be performed when both the solid-state imaging element 2 and the infrared absorption filter 3 are formed in a bent shape.

[0401] like Figure 25B or Figure 25C As shown, the adhesive 51 cures while pressing the end 60 of the clamping fixture 6 against the infrared absorption filter 3 and the solid-state imaging element 2. Thus, the solid-state imaging element 2 and the infrared absorption filter 3 are fixed to the curved receiving portion 50 of the base 5 in a curved shape.

[0402] Figure 25C The steps shown illustrate an example of forming a recess 55 in the curved receiving portion 50 of the base 5. The recess 55 absorbs excess adhesive 51. Meanwhile, Figure 25B The steps shown illustrate an example in which the recess 55 is not formed in the curved receiving portion 50 of the base 5.

[0403] For example, adhesive 51 uses one or more resin adhesives selected from epoxy resins, acrylic resins, and cyano resins. Adhesive 51 can use resin adhesives with curing types such as ultraviolet (UV) curing, heat curing, or time curing, and there are no particular limitations on the curing type.

[0404] When a UV-curable type resin adhesive is used for adhesive 51, the base 5 is formed of a material that allows UV light to pass through. Furthermore, when the end 60 of the clamping fixture 6 presses against the infrared absorbing filter 3 and the solid-state imaging element 2, the adhesive 51 is irradiated with UV light.

[0405] Note that the curing type of adhesive 51 is not limited to UV curing.

[0406] In addition, adhesive 51 can be replaced with chip attachment film (DAF).

[0407] Subsequently, the clamping is completed by clamping clamp 6, and clamping clamp 6 moves in the direction of arrow -Z. If a protective film is used, the protective film is removed.

[0408] Here, when the recess 55 is formed in the curved receiving portion 50 of the base 5, the end of the recess 55 is formed in a rounded shape as described above, so as to effectively suppress or prevent stress concentration.

[0409] Furthermore, although not shown, an underfill material can be formed on the side surface of the solid-state imaging element 2. The underfill material can reduce the possibility of damage to the solid-state imaging element 2, even in the event of an impact.

[0410] Although the pressing-type bending installation method has been described above, it can be combined with the above methods. Figure 10 The steps are shown in (C). That is, a gas leak-proof membrane 601 can be used, and gas can be released from the inside of the cavity through the vent 53 to mount the solid-state imaging element 2 in the curved receiving portion 50 by means of a pressure difference. The cavity is sealed by the gas leak-proof membrane 601, the solid-state imaging element 2, and the curved receiving portion 50.

[0411] also, Figure 10 The steps shown in (D) can be combined. That is, a gas leak-proof membrane 601 can be used, and the gas leak-proof membrane 601 and the solid-state imaging element 2 can be pressurized by gas blown from the nozzle 610 to mount the solid-state imaging element 2 in the curved receiving portion 50 by pressure difference.

[0412] According to the imaging apparatus 1 employing the pressing-type bending mounting method, the configuration of the modular lens (not shown) becomes simpler. Specifically, the number of lenses in the modular lens can be reduced. Furthermore, the height of the modular lens can be reduced. Additionally, higher resolution of the modular lens can be achieved.

[0413] Furthermore, according to the imaging device 1, the dependence of optical path difference in the infrared absorption filter 3 on image height is eliminated, which makes it possible to effectively suppress or prevent image quality degradation at the end of the field of view.

[0414] Furthermore, according to imaging device 1, the infrared cut-off filter (not shown) on the module lens side can be omitted, which reduces the reflective surface of the infrared cut-off filter and lowers manufacturing costs. The reflective surface of the infrared cut-off filter can cause glare or ghosting.

[0415] Figure 27A An example of a planar configuration of the curved receiving portion 50 of the base 5 on which the solid-state imaging element 2 is mounted is shown. Figure 27B An example of a planar configuration of the solid-state imaging element 2 is shown.

[0416] With the above Figure 9 The second bending installation method is the same as shown, such as Figure 27AAs shown, the solid-state imaging element 2 is shaped and sized such that it can be accommodated in the curved receiving portion 50 of the base 5 when viewed from above.

[0417] In addition, such as Figure 27B As shown, the solid-state imaging element 2 can be formed into a rectangular shape when viewed from above. Alignment marks 27 for positioning are provided in the peripheral portion of the solid-state imaging element 2. The marks 27 are relative to, for example, those described above... Figure 14 The base 5 shown is positioned by mark 57.

[0418] [Pressure Differential Bending Installation Method]

[0419] (1) Pressure-reducing bending installation method

[0420] Figure 28 to Figure 34 Examples of each step of the pressure-reducing bending installation method, which describes the pressure difference bending installation method, are shown.

[0421] Figure 28A An example of a planar configuration of base 5 is shown, and Figure 28B An example of the cross-sectional configuration of base 5 is shown. Figure 29A An example of a planar configuration of a base 5 for placing a solid-state imaging element 2 is shown. Figure 29B An example of a cross-sectional configuration of the base 5 on which the solid-state imaging element 2 is placed is shown. Furthermore, Figure 29C An example of the cross-sectional configuration of the main part of the base 5 is shown in an enlarged manner. Figure 30A An example of a planar configuration of a base 5 with a gas leak-proof membrane 601 installed is shown. Figure 30B An example of a cross-sectional configuration of a base 5 with a gas leak-proof membrane 601 installed is shown. Figure 31 An example of a cross-sectional configuration of a base 5 with a clamp 620 mounted is shown. Figure 32A An example of the planar configuration of the base 5 in a decompression state is shown. Figure 32B An example of the cross-sectional configuration of the base 5 under decompression is shown. Figure 33 An example of the cross-sectional configuration of the base 5 after the bending installation is completed is shown. Figure 34 An example of the cross-sectional configuration of the imaging device 1 after bending installation is shown.

[0422] The pressure-reducing bending installation method is as follows.

[0423] First, such as Figure 28A and Figure 28BAs shown, a base 5 is prepared. As described above, the base 5 includes a curved receiving portion 50, and a ventilation portion 53 is formed in the curved receiving portion 50. The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of a module lens (not shown). The ventilation portion 53 has the same characteristics as described above. Figure 10 (A) and Figure 10 The configuration of the ventilation section 53 shown in (B) is similar.

[0424] like Figure 29A and Figure 29B As shown, the solid-state imaging element 2, on which the infrared absorption filter 3 is mounted, is positioned corresponding to the curved receiving portion 50 of the base 5. The detailed configuration of the infrared absorption filter 3 and the solid-state imaging element 2, as well as the method of manufacturing the infrared absorption filter 3 and the solid-state imaging element 2, are described above.

[0425] Here, as Figure 29C As shown, the stepped portion 56 is formed in the curved receiving portion 50 (see Figure 1). Figure 13 The solid-state imaging element 2 is positioned relative to the interior of the curved receiving portion 50 via the stepped portion 56.

[0426] Furthermore, although not shown, it is consistent with the above. Figure 25A As shown in the steps, adhesive 51 is formed in the curved receiving portion 50. Adhesive 51 can be applied to the solid-state imaging element 2 on the second surface 21B side. Alternatively, adhesive 51 can be replaced with DAF.

[0427] like Figure 30A and Figure 30B As shown, a gas leak-proof membrane 601 covering the entire curved receiving portion 50 is disposed on the front surface 50A of the base 5, wherein the solid-state imaging element 2 and the infrared absorption filter 3 are located therebetween.

[0428] like Figure 31 As shown, the clamp 620 is mounted on the base 5, with a gas leak-proof membrane 601 sandwiched between them and pressing against the base 5. Thus, the solid-state imaging element 2 and the infrared absorption filter 3 are housed in a sealed state in the curved receiving portion 50 covered by the gas leak-proof membrane 601.

[0429] like Figure 32A and Figure 32B As shown, the pressure in the bending housing 50 is controlled by a connection to a vacuum device 600 (see Figure 1). Figure 10The ventilation section 53 of (C) is reduced. This creates a pressure difference, which causes the solid-state imaging element 2 and the infrared absorption filter 3 to bend along the curved shape of the curved receiving section 50, thereby mounting the solid-state imaging element 2 in the curved receiving section 50. Note that the curved shape of the solid-state imaging element 2 is maintained by curing an adhesive 51 (not shown). The specific material and curing type of the adhesive 51 are as described above.

[0430] like Figure 33 As shown, pull up the clamp 620 and remove the gas leak-proof membrane 601.

[0431] like Figure 34 As shown, the interior of the ventilation section 53 of the base 5 is filled with an embedded member 58. For example, when incident light L in the long wavelength region passes through the solid-state imaging element 2 and is reflected by the curved receiving section 50 of the base 5, the embedded member 58 can effectively suppress or prevent reflection phenomena caused by the shape of the ventilation section 53.

[0432] Furthermore, the embedded member 58 effectively suppresses or prevents the loss of stress balance in the solid-state imaging element 2 caused by the ventilation portion 53. This effectively suppresses or prevents the degradation of dark current and white spot in the solid-state imaging element 2.

[0433] Furthermore, the embedded member 58 can be formed of a material with a thermal conductivity higher than that of the base 5. This allows for improved heat dissipation characteristics in the imaging device 1.

[0434] To achieve these advantages, the embedded component 58 includes one or more materials selected from materials with high reflectivity, materials that can be precisely embedded in the ventilation section 53 without gaps, and materials with high thermal conductivity.

[0435] Although the decompression-type bending mounting method has been described above, mark 27 can be formed in the solid-state imaging element 2 as described above (see Figure 27B Furthermore, porous material 54 can be formed in the ventilation section 53 of the base 5 (see...). Figure 11 (A) and Figure 11 (B)

[0436] (2) Pressure-type bending installation method

[0437] Figure 35 to Figure 41 Examples of each step of the pressure-type bending installation method, which describes the pressure difference type bending installation method, are shown.

[0438] Figure 35A An example of a planar configuration of base 5 is shown, and Figure 35B An example of the cross-sectional configuration of base 5 is shown. Figure 36AAn example of a planar configuration of a base 5 for placing a solid-state imaging element 2 is shown. Figure 36B An example of a cross-sectional configuration of the base 5 on which the solid-state imaging element 2 is placed is shown. Figure 36C An example of the cross-sectional configuration of the main part of the base 5 is shown in an enlarged manner. Figure 37A An example of a planar configuration of a base 5 with a gas leak-proof membrane 601 installed is shown. Figure 37B An example of a cross-sectional configuration of a base 5 with a gas leak-proof membrane 601 installed is shown. Figure 38 An example of a cross-sectional configuration of a base 5 on which a nozzle 610 is mounted is shown. Figure 39A An example of the planar configuration of the base 5 under pressure is shown. Figure 39B An example of the cross-sectional configuration of the base 5 under pressure is shown. Figure 40 An example of the cross-sectional configuration of the base 5 after the bending installation is completed is shown. Figure 41 An example of the cross-sectional configuration of the imaging device 1 after bending installation is shown.

[0439] The pressure-type bending installation method is as follows.

[0440] First, such as Figure 35A and Figure 35B As shown, a base 5 is prepared. As described above, the base 5 includes a curved receiving portion 50, and a ventilation portion 53 is formed in the curved receiving portion 50. The ventilation portion 53 has the same characteristics as described above. Figure 10 (A) and Figure 10 The configuration of the ventilation section 53 shown in (B) is similar.

[0441] like Figure 36A and Figure 36B As shown, the solid-state imaging element 2, on which the infrared absorption filter 3 is mounted, is positioned corresponding to the curved receiving portion 50 of the base 5. The detailed configuration of the infrared absorption filter 3 and the solid-state imaging element 2, as well as the method of manufacturing the infrared absorption filter 3 and the solid-state imaging element 2, are described above.

[0442] Here, as Figure 36C As shown, the stepped portion 56 is formed in the curved receiving portion 50 (see Figure 1). Figure 13 The solid-state imaging element 2 is positioned relative to the interior of the curved receiving portion 50 via the stepped portion 56.

[0443] Furthermore, although not shown, it is consistent with the above. Figure 25A As shown in the steps, adhesive 51 is formed in the curved receiving portion 50. Adhesive 51 can be applied to the solid-state imaging element 2 on the second surface 21B side. Alternatively, adhesive 51 can be replaced with DAF.

[0444] like Figure 37A and Figure 37BAs shown, a gas leak-proof membrane 601 covering the entire curved receiving portion 50 is disposed on the front surface 50A of the base 5, wherein the solid-state imaging element 2 and the infrared absorption filter 3 are located therebetween.

[0445] like Figure 38 As shown, a clamp 620 is mounted on a base 5, with a gas leak-proof membrane 601 interposed therebetween and pressed against the base 5. A nozzle 610 is attached to the clamp 620. A gas generating device (not shown) is connected to the nozzle 610.

[0446] The installation of the clamp 620 allows the solid-state imaging element 2 and the infrared absorption filter 3 to be housed in a sealed state in the curved receiving portion 50 covered with a gas leak-proof membrane 601.

[0447] like Figure 39A and Figure 39B As shown, gas is blown from nozzle 610 through gas leak-proof membrane 601 to infrared absorption filter 3 and solid-state imaging element 2. In other words, infrared absorption filter 3 and solid-state imaging element 2 are pressurized by gas.

[0448] At the same time, the gas in the curved receiving portion 50 is released through the ventilation portion 53 of the base 5. Furthermore, the pressure in the curved receiving portion 50 is reduced through the ventilation portion 53 of the base 5. This creates a pressure difference, which causes the solid-state imaging element 2 and the infrared absorption filter 3 to bend along the curved shape of the curved receiving portion 50, thereby mounting the solid-state imaging element 2 within the curved receiving portion 50. Note that the curved shape of the solid-state imaging element 2 is maintained by curing an adhesive 51 (not shown). The specific material and curing type of the adhesive are as described above.

[0449] like Figure 40 As shown, pull up the clamp 620 and remove the gas leak-proof membrane 601.

[0450] With the above Figure 34 The steps are the same as shown, such as Figure 41 As shown, the interior of the ventilation section 53 of the base 5 is filled with an embedded member 58. The material of the embedded member 58 is as described above.

[0451] Although the pressurized bending mounting method has been described above, mark 27 can be formed in the solid-state imaging element 2 as described above (see Figure 27B Furthermore, porous material 54 can be formed in the ventilation section 53 of the base 5 (see...). Figure 11 (A) and Figure 11 (B)

[0452] [Configuration example of solid-state imaging element 2]

[0453] (1) First configuration of solid-state imaging element 2

[0454] Figure 42 An example of a specific cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 3 according to the first configuration is shown.

[0455] like Figure 42 As shown, the solid-state imaging element 2 basically has the same characteristics as described above. Figure 1 and Figure 21 The solid-state imaging element 2 shown has a similar configuration. Solid-state imaging element 2 is a back-illuminated solid-state imaging element.

[0456] Here, in the solid-state imaging element 2, an optical filter 23 and an optical lens 24 are sequentially stacked on the first surface 21A side of the semiconductor substrate 21, and a planarization film 25 is set as the final layer. The optical lens 24 uses a high refractive index material. In contrast, the planarization film 25 uses a low refractive index material with a refractive index lower than that of the optical lens 24. The refractive index of the planarization film 25 is set to be 1.2 or higher and 1.5 or lower.

[0457] In addition, an infrared absorption filter 3 is disposed on the planarization film 25.

[0458] In the solid-state imaging element 2 configured as described above, a thick infrared absorption filter 3 can be formed, which allows for sufficient absorption of infrared light.

[0459] Furthermore, in the solid-state imaging element 2, the infrared absorption filter 3 is disposed on the optical lens 24, which allows the optical lens 24 to be placed closer to the photoelectric conversion region 200. This enables the solid-state imaging element 2 to have robust oblique incidence characteristics.

[0460] (2) Second configuration of solid-state imaging element 2

[0461] Figure 43 An example of a specific cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 3 according to the second configuration is shown.

[0462] like Figure 43 As shown above, Figure 42 The solid-state imaging element 2 shown is the same as the back-illuminated solid-state imaging element 2.

[0463] In the solid-state imaging element 2, an infrared absorption filter 3 is disposed between the optical filter 23 and the optical lens 24. The planarization film 25 is omitted. The optical lens 24 is formed of a common refractive index material.

[0464] In the above Figure 42In the solid-state imaging element 2 shown, its frontmost surface is planarized by an infrared absorption filter 3, which causes strong specular reflection of the incident light L. For example, with a high-brightness light source such as sunlight, this is a factor that causes the specular reflection from the solid-state imaging element 2 to be reflected again at the component on the module lens side, thereby causing ghosting.

[0465] However, as Figure 43 As shown, in the solid-state imaging element 2, an optical lens 24 (and an anti-reflective coating 241) with an uneven front surface are provided, which causes the incident light L to be scattered. This makes it possible to effectively suppress or prevent ghosting.

[0466] (3) Third configuration of solid-state imaging element 2

[0467] Figure 44 An example of a specific cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 3 according to the third configuration is shown.

[0468] like Figure 44 As shown, solid-state imaging element 2 is a front-illuminated solid-state imaging element, which differs from the above. Figure 42 Solid-state imaging element 2 is shown.

[0469] In the solid-state imaging element 2, the semiconductor substrate 21 and the wiring layer 22 in the substrate 20 are interchanged, and the wiring layer 22 is disposed between the semiconductor substrate 21 and the optical filter 23. The stacked structure of the optical filter 23, the optical lens 24, the planarization film 25 and the infrared absorption filter 3 is similar to the stacked structure in the solid-state imaging element 2 according to the first configuration.

[0470] Here, the optical lens 24 uses a high refractive index material. In contrast, the planarization film 25 uses a low refractive index material with a refractive index lower than that of the optical lens.

[0471] According to the solid-state imaging element 2 configured as described above, similar effects and functions can be obtained as those obtained according to the solid-state imaging element 2 configured in the first way.

[0472] (4) Fourth configuration of solid-state imaging element 2

[0473] Figure 45 An example of a specific cross-sectional configuration of the solid-state imaging element and infrared absorption filter 3 according to the fourth configuration is shown.

[0474] like Figure 45 As shown above, Figure 44 Similar to the solid-state imaging element 2 shown, solid-state imaging element 2 is a front-illuminated solid-state imaging element.

[0475] Furthermore, in the solid-state imaging element 2, the above-mentioned Figure 43Similar to the solid-state imaging element 2 shown, an infrared absorption filter 3 is disposed between the optical filter 23 and the optical lens 24. The planarization film 25 is omitted. The optical lens 24 is formed of a common refractive index material.

[0476] According to the solid-state imaging element 2 configured as described above, similar effects and functions can be obtained as those obtained by the solid-state imaging element 2 configured according to the second method.

[0477] (5) Fifth configuration of solid-state imaging element 2

[0478] Figure 46 An example of a specific cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 3 according to the fifth configuration is shown.

[0479] like Figure 46 As shown, the solid-state imaging element 2 is a back-illuminated solid-state imaging element, similar to the one described above. Figure 42 It is the same as the solid-state imaging element 2 shown.

[0480] The solid-state imaging element 2 is further provided with one or more of inorganic protective film 31 and anti-reflective film 32 on the infrared absorption filter 3.

[0481] An inorganic protective film 31 is disposed between the planarization film 25 and the infrared absorption filter 3. The inorganic protective film 31 is formed of a material having the minimum possible extinction coefficient for the wavelength detected by the solid-state imaging element 2. For example, the extinction coefficient of the inorganic protective film 31 is set to be 0.01 or less. For example, the inorganic protective film 31 is formed of one or more materials selected from SiO2, SiN, SiON, SiC, Al2O3, HfO2, and TiO2.

[0482] Furthermore, the inorganic protective film 31 is formed with a thickness that allows for a small reflection of the wavelength to be detected. Here, the thickness of the inorganic protective film 31 is set to approximately 4 / (nλ) or an integer multiple thereof, where λ is the wavelength of the incident light L, and n is the refractive index of the inorganic protective film 31. Strictly speaking, considering the effects of interference and oblique incidence in the multilayer structure, the thickness of the inorganic protective film 31 is set based on theoretical calculations using the Fresnel coefficient method or wave optics simulation, or by measuring the reflectivity of the actual prepared sample.

[0483] The anti-reflective film 32 is disposed on the opposite side of the inorganic protective film 31 on the infrared absorption filter 3. In other words, the infrared absorption filter 3 is inserted between the inorganic protective film 31 and the anti-reflective film 32.

[0484] The antireflective film 32 is formed of an inorganic material that is substantially similar to that of the inorganic protective film 31, and has a thickness substantially similar to that of the inorganic protective film 31.

[0485] Furthermore, the anti-reflective film 32 can be formed of a material different from that of the inorganic protective film 31. Additionally, the anti-reflective film 32 can be formed by stacking different materials to effectively improve the anti-reflective effect. Furthermore, the anti-reflective film 32 can be formed to be thicker than the inorganic protective film 31 to improve passivation functionality.

[0486] The solid-state imaging element 2, which includes an infrared absorption filter 3 configured as described above, is provided with at least one of an inorganic protective film 31 or an anti-reflective film 32, which makes it possible to effectively suppress or prevent the entry of moisture and the like.

[0487] In addition, the thickness of at least one of the inorganic protective film 31 or the anti-reflective film 32 can be determined by setting the refractive index, which can effectively suppress or prevent reflection.

[0488] Furthermore, in the method of manufacturing the solid-state imaging element 2, forming an anti-reflective film 32 on the infrared absorption filter 3 effectively suppresses or prevents the mixing of the organic material formed on the anti-reflective film 32 and the infrared absorption filter 3. The organic material corresponds to, for example, a photoresist used to form bonding openings in the infrared absorption filter 3, etc.

[0489] (6) The sixth configuration of solid-state imaging element 2

[0490] Figure 47 An example of a specific cross-sectional configuration of the solid-state imaging element 2, infrared absorption filter 3, and multilayer filter 4 according to the sixth configuration is shown.

[0491] like Figure 47 As shown, the solid-state imaging element 2 basically has the same characteristics as described above. Figure 5 The solid-state imaging element 2 shown has a similar configuration. Solid-state imaging element 2 is a back-illuminated solid-state imaging element.

[0492] The solid-state imaging element 2 includes a multilayer film filter 4 between the planarization film 25 and the infrared absorption filter 3. In other words, the solid-state imaging element 2 includes an infrared absorption filter as an absorption-type infrared cut-off filter (IRCF) and a multilayer film filter 4 as a reflection-type infrared cut-off filter (IRCF) or bandpass filter (BPF).

[0493] Figure 48 An example of a specific cross-sectional configuration of the multilayer film filter 4 is shown in an enlarged manner.

[0494] like Figure 48 As shown, the multilayer filter 4 is formed by alternately stacking multiple high refractive index layers 401 and multiple low refractive index layers 402.

[0495] For example, one or more high refractive index materials selected from Al2O3 with a refractive index of 1.77, SiN with a refractive index of 1.91, HfO2 with a refractive index of 1.93, ZnO2 with a refractive index of 2.00, Ta2O5 with a refractive index of 2.15, TiO2 with a refractive index of 2.28, and Nb2O5 with a refractive index of 2.33 are used in the high refractive index layer 401.

[0496] In addition, for example, one or more low refractive index materials selected from SiO2 with a refractive index of 1.45, SiOC with a refractive index of 1.40, MgF2 with a refractive index of 1.38 and AlF3 with a refractive index of 1.38 are used in the low refractive index layer 402.

[0497] Here, Figure 49A An example of the relationship between wavelength and transmittance for infrared absorption filter 3 is shown. Furthermore, Figure 49B An example of the relationship between wavelength and transmittance for multilayer film filter 4 is shown. Figure 49A and Figure 49B In each of these, the horizontal axis indicates wavelength and the vertical axis indicates transmittance.

[0498] like Figure 49A As shown, even if the incident angle of the incident light L changes, the transmittance of the infrared absorption filter 3 remains uniform.

[0499] Similarly, as Figure 49B As shown, even if the incident angle of the incident light L changes, the transmittance of the multilayer filter 4 remains the same.

[0500] The combination of the solid-state imaging element 2 configured as described above, the infrared absorption filter 3, and the multilayer film filter 4 offset each other's disadvantages, thereby improving the characteristics of the infrared cut-off filter.

[0501] Furthermore, according to the solid-state imaging element 2, compared to the case where only a multilayer film filter 4 is provided, the combination of the multilayer film filter 4 and the infrared absorption filter 3 allows for a reduction in the number of layers in the multilayer film filter 4. This enables a reduction in the manufacturing cost of the solid-state imaging element 2.

[0502] (7) The seventh configuration of solid-state imaging element 2

[0503] Figure 50 An example of a specific cross-sectional configuration of the solid-state imaging element 2, infrared absorption filter 3, and multilayer filter 4 according to the seventh configuration is shown.

[0504] like Figure 50 As shown, the solid-state imaging element 2 is basically a back-illuminated solid-state imaging element, similar to the one described above. Figure 47 It is the same as the solid-state imaging element 2 shown.

[0505] In the solid-state imaging element 2, an infrared absorption filter 3 is disposed on the planarization film 25, and a multilayer film filter 4 is disposed on the infrared absorption filter 3. In other words, the positions of the infrared absorption filter 3 and the multilayer film filter 4 are interchanged.

[0506] According to the solid-state imaging element 2 configured as described above, it is possible to obtain and transmit images through the solid-state imaging element 2. Figure 47 The solid-state imaging element 2 shown has similar functions and effects.

[0507] (8) Eighth configuration of solid-state imaging element 2

[0508] Figure 51 An example of a specific cross-sectional configuration of the solid-state imaging element 2, infrared absorption filter 3, and multilayer filter 4 according to the eighth configuration is shown.

[0509] like Figure 51 As shown, the solid-state imaging element 2 is basically a back-illuminated solid-state imaging element, similar to the one described above. Figure 43 It is the same as the solid-state imaging element 2 shown.

[0510] In the solid-state imaging element 2, an infrared absorption filter 3 is disposed between the optical filter 23 and the optical lens 24. Additionally, a multilayer filter 4 is disposed on the optical lens 24, with a planarization film 25 interposed therebetween.

[0511] According to the solid-state imaging element 2 configured as described above, it is possible to obtain and transmit images through the solid-state imaging element 2. Figure 47 The solid-state imaging element 2 shown has similar functions and effects.

[0512] (9) Ninth configuration of solid-state imaging element 2

[0513] Figure 52 An example of a specific cross-sectional configuration of the solid-state imaging element 2, infrared absorption filter 3, and multilayer filter 4 according to the ninth configuration is shown.

[0514] like Figure 52 As shown, the solid-state imaging element 2 is basically a back-illuminated solid-state imaging element, similar to the one described above. Figure 47 It is the same as the solid-state imaging element 2 shown.

[0515] In the solid-state imaging element 2, a multilayer filter 4 is disposed between the optical filter 23 and the optical lens 24. Furthermore, an infrared absorption filter 3 is disposed on the optical lens 24, with a planarization film 25 interposed therebetween.

[0516] According to the solid-state imaging element 2 configured as described above, it is possible to obtain and transmit images through the solid-state imaging element 2. Figure 47 The solid-state imaging element 2 shown has similar functions and effects.

[0517] [Configuration example of infrared absorption filter 3]

[0518] Figure 53 Examples of infrared absorbing materials for infrared absorbing filter 3 are shown in (A) to (M).

[0519] The infrared absorbing material forming the infrared absorption filter 3 includes Figure 53 The Cu-containing compound shown in (A) Figure 53 (B) shows the cyanine acid, Figure 53 (C) shows anthraquinone, Figure 53 The Ni complex shown in (D), and Figure 53 The CsW shown in (E) x O y In addition, infrared absorbing materials include Figure 53 The diammonium (F) shown is diammonium. Figure 53 The above-mentioned anthocyanin dye shown in (G), Figure 53 The pyrrolopyrrole (H) shown Figure 53 The azo complex shown in (I), and Figure 53 Conductive oxides such as ITO are shown in (J). Furthermore, infrared absorbing materials include... Figure 53 The acetylene polymer shown in (K) is in Figure 53 The (L) thiourea shown, and in Figure 53 The phthalocyanine shown in (M).

[0520] As described above, various infrared absorbing materials other than the aforementioned cyanine dyes can be used. Furthermore, considering infrared absorptivity and visible light transmittance, the infrared absorption filter 3 can be made from materials selected from... Figure 53 It is formed by a combination of two or more of the infrared absorbing materials shown in (A) to (M).

[0521] <2. Second Implementation Method>

[0522] Reference Figures 54 to 76 The imaging apparatus 1 according to the second embodiment of the present disclosure and the method of manufacturing the imaging apparatus 1 are described.

[0523] [Schematic configuration of imaging device 1]

[0524] Figure 54 An example of the cross-sectional configuration of the imaging apparatus 1 according to the second embodiment is shown.

[0525] Similar to the imaging device 1 according to the first embodiment, the imaging device 1 according to the second embodiment includes a base 5 and a solid imaging element 2 that is bent and mounted in a bent receiving portion 50 of the base 5, and further includes an infrared absorption filter 30.

[0526] The infrared absorption filter 30 extends from the light-receiving surface of the solid-state imaging element 2 via the side surface of the solid-state imaging element 2 to the peripheral portion of the front surface 50A of the base 5, and is in close contact with each of the light-receiving surface, the side surface, and the front surface 50A. The infrared absorption filter 30 has a similar function to the infrared absorption filter 3 according to the first embodiment, and also functions as a gas leak-proof membrane 601. The infrared absorption filter 30 is formed in a membrane shape.

[0527] [Overview of the method for manufacturing imaging device 1]

[0528] Figures 55 to 58 are step diagrams outlining the method for manufacturing the imaging device 1. Figure 55A An example of the planar configuration of base 5 before installation is shown. Figure 55B An example of the cross-sectional configuration of base 5 before installation is shown. Figure 56A An example of a planar configuration of a base 5 for placing a solid-state imaging element 2 is shown. Figure 56B An example of a cross-sectional configuration of the base 5 on which the solid-state imaging element 2 is placed is shown. Figure 57A An example of a planar configuration of a base 5 on which an infrared absorption filter 30 is mounted is shown. Figure 57B An example of a cross-sectional configuration of a base 5 on which an infrared absorption filter 30 is mounted is shown. Figure 58A An example of a planar configuration of the base 5, solid-state imaging element 2, and infrared absorption filter 30 after bending installation is shown. Figure 58B An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, and infrared absorption filter 30 after bending installation is shown.

[0529] First, such as Figure 55A and Figure 55B As shown, a base 5 is formed. The base 5 includes a curved receiving portion 50. A ventilation portion 53 is formed in the central portion of the curved receiving portion 50 of the base 5.

[0530] Simultaneously, a solid-state imaging element 2 similar to the solid-state imaging element according to the first embodiment described above is formed (see...). Figure 1 and Figure 21 ).

[0531] like Figure 56A and Figure 56B As shown, the solid-state imaging element 2 is placed on the curved receiving portion 50 of the base 5. Although not shown here, adhesive 51 is formed in the curved receiving portion 50 or on the solid-state imaging element 2 (see [reference]). Figure 12 (C)).

[0532] Subsequently, as Figure 57A and Figure 57BAs shown, an infrared absorption filter 30 is disposed on the surface of the solid-state imaging element 2. As described above, the infrared absorption filter 30 also functions as a gas leak-proof membrane 601. Viewed from above, the infrared absorption filter 30 is formed to have a size larger than each dimension of the solid-state imaging element 2 and the curved receiving portion 50, and the edge of the infrared absorption filter 30 extends to the peripheral portion of the front surface 50A of the base 5.

[0533] like Figure 58A and Figure 58B As shown, the solid-state imaging element 2 is bent along the curved shape of the curved receiving portion 50 by a pressure difference, and thereby the solid-state imaging element 2 is mounted in the curved receiving portion 50. Similar to the pressure difference in the first embodiment, this pressure difference is caused by depressurization or pressurization.

[0534] Here, when the solid-state imaging element 2 is formed in a curved shape, the infrared absorption filter 30 is also formed in a curved shape along the light-receiving surface of the solid-state imaging element 2, and is formed to be in close contact with the light-receiving surface, side surface, etc. The infrared absorption filter 3 is incorporated into the imaging device 1.

[0535] Furthermore, when the adhesive 51 cures, the curved solid imaging element 2 and the infrared absorption filter 30 are fixed in the curved receiving portion 50 of the base 5.

[0536] When the solid-state imaging element 2 and the infrared absorption filter 30 are mounted on the base 5, the manufacturing process is completed, and the imaging device 1 is completed.

[0537] According to the imaging device 1 configured as described above, the solid-state imaging element 2 is mounted on the base 5 with the infrared absorption filter 30 positioned across the side surface of the solid-state imaging element 2 from its light-receiving surface. This effectively reduces the possibility of damage to the solid-state imaging element 2 even in the event of an impact.

[0538] Furthermore, the effect of attenuating stray light in the absorption wavelength region of the infrared absorption filter 30 can be enhanced to address glare or ghosting that occurs when incident light L from a high-brightness light source such as sunlight illuminates the side surface of the solid-state imaging element 2.

[0539] Furthermore, according to the method for manufacturing (installing) the imaging device 1, an infrared absorption filter 30 that also functions as a gas leak-proof membrane 601 is formed. Therefore, in the method for manufacturing the imaging device 1, the steps of forming the gas leak-proof membrane 601 and removing the gas leak-proof membrane 601 are omitted, which reduces the number of steps.

[0540] [Pressure Differential Bending Installation Method]

[0541] Figure 59 to Figure 67Examples of each step of the pressure-reducing bending installation method, which describes the pressure difference bending installation method, are shown.

[0542] Figure 59A An example of a planar configuration of base 5 is shown. Figure 59B An example of the cross-sectional configuration of base 5 is shown. Figure 60A An example of a planar configuration of a base 5 for placing a solid-state imaging element 2 is shown. Figure 60B An example of a cross-sectional configuration of the base 5 on which the solid-state imaging element 2 is placed is shown. Furthermore, Figure 60C An example of the cross-sectional configuration of the main part of the base 5 is shown in an enlarged manner. Figure 61 An example of a planar configuration of the infrared absorption filter 30 is shown. Figure 62A An example of a planar configuration of a base 5 on which an infrared absorption filter 30 is mounted is shown. Figure 62B An example of a cross-sectional configuration of a base 5 on which an infrared absorption filter 30 is mounted is shown. Figure 63A An example of the planar configuration of the base 5 in a decompression state is shown. Figure 63B An example of the cross-sectional configuration of the base 5 under decompression is shown. Figure 64 An example of the cross-sectional configuration of the base 5 is shown with the vent 53 filled with the embedded member 58. Figure 65 An example of a cross-sectional configuration of a package 10 with a base 5 mounted is shown. Figure 66 An example of the cross-sectional configuration of the package 10 with the lead 11 bonded is shown. Figure 67 An example of the cross-sectional configuration of the base 5 under pressure according to a modified example is shown.

[0543] The pressure-reducing bending installation method is as follows.

[0544] First, such as Figure 59A and Figure 59B As shown, a base 5 is prepared. As described above, the base 5 includes a curved receiving portion 50, and a ventilation portion 53 is formed in the curved receiving portion 50. The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of a module lens (not shown). The ventilation portion 53 has the same characteristics as described above. Figure 10 (A) and Figure 10 The configuration of the ventilation section 53 shown in (B) is similar.

[0545] like Figure 60A and Figure 60B As shown, the solid-state imaging element 2 is positioned at a location corresponding to the curved receiving portion 50 of the base 5. The detailed configuration of the solid-state imaging element 2 and the method for manufacturing the solid-state imaging element 2 are described above.

[0546] Here, as Figure 60C As shown, the stepped portion 56 is formed in the curved receiving portion 50 (see Figure 1). Figure 13 The solid-state imaging element 2 is positioned relative to the interior of the curved receiving portion 50 via the stepped portion 56.

[0547] Furthermore, adhesive 51 is formed on the second surface 21B side of the solid-state imaging element 2.

[0548] like Figure 61 As shown, an infrared absorption filter 30 is prepared. The infrared absorption filter 30 also functions as the gas leak-proof membrane 601 as described above. Furthermore, a bonding opening 30H is formed in the infrared absorption filter 30 at a position corresponding to the bonding pad (not shown) of the solid-state imaging element 2.

[0549] like Figure 62A and Figure 62B As shown, an infrared absorption filter 30 that completely covers the curved receiving portion 50 is disposed on the front surface 50A of the base 5, wherein the solid-state imaging element 2 is disposed therebetween.

[0550] like Figure 63A and Figure 63B As shown, the pressure in the bending housing 50 is controlled by a connection to a vacuum device 600 (see Figure 1). Figure 10 The ventilation section 53 of (C) is reduced. This creates a pressure difference, which causes the solid-state imaging element 2 and the infrared absorption filter 30 to bend along the curved shape of the curved receiving section 50, and thus the solid-state imaging element 2 is mounted in the curved receiving section 50.

[0551] At this time, the infrared absorption filter 30 is in close contact with the light-receiving surface and side surface of the solid-state imaging element 2, as well as the peripheral portion of the front surface 50A of the base 5. The curved shape of the solid-state imaging element 2 is maintained by the curing of the adhesive 51. The specific material and curing type of the adhesive 51 are as described above.

[0552] like Figure 64 As shown, the interior of the ventilation portion 53 of the base 5 is filled with an embedded member 58. Similar to the embedded member 58 according to the first embodiment, for example, when incident light L in the long wavelength region passes through the solid-state imaging element 2 and is reflected by the curved receiving portion 50 of the base 5, the embedded member 58 can effectively suppress or prevent reflection phenomena caused by the shape of the ventilation portion 53.

[0553] Furthermore, the embedded member 58 effectively suppresses or prevents the loss of stress balance in the solid-state imaging element 2 caused by the ventilation portion 53. This effectively suppresses or prevents the degradation of dark current and white spot in the solid-state imaging element 2.

[0554] Furthermore, the embedded member 58 can be formed of a material with a thermal conductivity higher than that of the base 5. This allows for improved heat dissipation characteristics in the imaging device 1.

[0555] To achieve these advantages, the embedded component 58 includes one or more materials selected from materials with high reflectivity, materials that can be precisely embedded in the ventilation section 53 without gaps, and materials with high thermal conductivity.

[0556] like Figure 65 As shown, the base 5, which has been bent for mounting, is installed in the package 10. Although detailed configuration and configuration descriptions are omitted, wiring is formed in the package 10.

[0557] like Figure 66 As shown, lead 11 is bonded. One end of lead 11 is electrically coupled to the wiring of package 10. The other end of lead 11 is electrically coupled to a bonding pad (not shown) of solid-state imaging element 2 through the bonding opening 30H of infrared absorption filter 30.

[0558] When a series of manufacturing processes are completed, the imaging device 1, including the solid-state imaging element 2 and the infrared absorption filter 30, is completed. The solid-state imaging element 2 is mounted in a curved receiving portion 50 of the base 5. The infrared absorption filter 30 is in close contact with the light-receiving surface of the solid-state imaging element 2. The infrared absorption filter 30 is a component of the imaging device 1.

[0559] Note that in the method of manufacturing imaging device 1, mark 27 can be formed in solid-state imaging element 2 as described above (see Figure 27B Furthermore, porous material 54 can be formed in the ventilation section 53 of the base 5 (see...). Figure 11 (A) and Figure 11 (B)

[0560] Furthermore, in the method for manufacturing the imaging device 1 herein, such as Figure 67 As shown, a pressure-type bending installation method can be used, wherein a pressure difference is generated by applying pressure (see Figures 35 to 36). Figure 41 In other words, pressurized gas is blown from nozzle 610 to bend the solid-state imaging element 2 and the infrared absorption filter 30 along the curved shape of the curved receiving portion 50, thereby mounting the solid-state imaging element 2 in the curved receiving portion 50. Through the pressure difference, the infrared absorption filter 30 is in close contact with the light-receiving surface and side surface of the solid-state imaging element 2 and the peripheral portion of the front surface 50A of the base 5.

[0561] According to the imaging device 1 configured as described above, the solid-state imaging element 2 is mounted on the base 5 with the infrared absorption filter 30 positioned across the side surface of the solid-state imaging element 2 from its light-receiving surface. This effectively reduces the possibility of damage to the solid-state imaging element 2 even in the event of an impact.

[0562] Furthermore, the effect of attenuating stray light in the absorption wavelength region of the infrared absorption filter 30 can be enhanced to address glare or ghosting that occurs when incident light L from a high-brightness light source such as sunlight illuminates the side surface of the solid-state imaging element 2.

[0563] Furthermore, according to the method for manufacturing (installing) the imaging device 1, an infrared absorption filter 30 that also functions as a gas leak-proof membrane 601 is formed. Therefore, in the method for manufacturing the imaging device 1, the steps of forming the gas leak-proof membrane 601 and removing the gas leak-proof membrane 601 are omitted, which reduces the number of steps.

[0564] [First type of pressing-type bending installation method]

[0565] Figure 68 to Figure 71 Each step of the pressing-type bending installation method is illustrated with an example. Figure 68A An example of a planar configuration of the solid-state imaging element 2 and the infrared absorption filter 30 used to describe the press-type bending mounting method is shown, and Figure 68B An example of a cross-sectional configuration of the solid-state imaging element 2 and the infrared absorption filter 30 is shown. Figure 69 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30, and clamping fixture 6 before press-type bending installation is shown. Figure 70 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30 and clamping fixture 6 during press-type bending installation is shown. Figure 71 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30, and clamping fixture 6 after press-type bending installation is shown.

[0566] The pressing-type bending installation method is as follows.

[0567] First, such as Figure 68A and Figure 68B As shown, a film-shaped infrared absorption filter 30 is formed on the light-receiving surface of the solid-state imaging element 2 using an adhesive 33 interposed therebetween. The detailed configuration of the solid-state imaging element 2 and the method of manufacturing the solid-state imaging element 2 are described above. For example, a resin adhesive is used for the adhesive 33, and the adhesive 33 is coated onto the solid-state imaging element 2 or the infrared absorption filter 30. Alternatively, a DAF can be used for the adhesive 33.

[0568] Here, the infrared absorption filter 30 is formed with a planar dimension smaller than that of the solid-state imaging element 2.

[0569] Next, prepare the base 5, and place the solid-state imaging element 2, including the infrared absorption filter 30, at a position corresponding to the curved receiving portion 50 of the base 5 (see...). Figure 69 The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of the module lens (not shown).

[0570] Furthermore, adhesive 51 is formed in the curved receiving portion 50. Adhesive 51 can be applied to the solid-state imaging element 2 on the second surface 21B side. Adhesive 51 is formed of a material similar to the material of adhesive 51 according to the first embodiment or of a material with a curing type similar to that of adhesive 51 according to the first embodiment.

[0571] Here, the recess 55 is formed in the curved receiving portion 50 of the base 5 (see...). Figure 12 The recess 55 effectively inhibits or prevents the overflow of the adhesive 51. Furthermore, a stepped portion 56 is formed in the curved receiving portion 50 (see...). Figure 13 The stepped portion 56 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2. Furthermore, a mark 57 can be formed in the base 5 (see...). Figure 14 Marker 57 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2.

[0572] like Figure 69 As shown, the clamping clamp 6 is placed on the curved receiving portion 50 of the base 5, with the solid-state imaging element 2 and the infrared absorption filter 30 interposed therebetween, and is initially press-fitted by the clamping clamp 6. The clamping clamp 6 is provided with an end 60 having a curved shape protruding on the opposite side of the arrow-Z direction (in the incident direction of the incident light L).

[0573] Here, a protective film can be inserted between the infrared absorption filter 30 and the end 60 of the clamping fixture 6. In this case, the protective film can effectively suppress or prevent the appearance of marks on the surface of the infrared absorption filter 30 or the solid-state imaging element 2.

[0574] like Figure 70 As shown, the adhesive 51 cures while the end 60 of the clamping fixture 6 presses against the infrared absorption filter 30 and the solid-state imaging element 2. The recess 55 absorbs excess adhesive 51. Thus, the solid-state imaging element 2 and the infrared absorption filter 30 are fixed to the curved receiving portion 50 of the base 5 in a curved shape.

[0575] Afterwards, the pressing by the clamping fixture 6 is completed, and the clamping fixture 6 is moved in the direction of arrow -Z. If a protective film is used, the protective film is removed.

[0576] Here, when the recess 55 is formed in the curved receiving portion 50 of the base 5, the end of the recess 55 is formed in a rounded shape as described above, so as to effectively suppress or prevent stress concentration.

[0577] Based on the imaging device 1 configured as described above and the method for manufacturing the imaging device 1, an image can be obtained that is consistent with the image obtained through Figures 59 to 59. Figure 67 The imaging device 1 described herein and the method of manufacturing the imaging device 1 (pressure difference type bending mounting method) have similar effects and results.

[0578] [Second Press-Type Bending Installation Method]

[0579] Figures 72 to 76 Each step of the pressing-type bending installation method is illustrated with an example. Figure 72 An example of a planar configuration of an infrared absorbing filter 30 used to describe a press-type bending mounting method is shown. Figure 73 An example of a cross-sectional configuration of the base 5 on which the solid-state imaging element 2 and the infrared absorption filter 30 are placed is shown. Figure 74 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30, and clamping fixture 6 before press-type bending installation is shown. Figure 75 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30 and clamping fixture 6 during press-type bending installation is shown. Figure 76 An example of the cross-sectional configuration of the base 5, solid-state imaging element 2, infrared absorption filter 30, and clamping fixture 6 after press-type bending installation is shown.

[0580] The pressing-type bending installation method is as follows.

[0581] First, such as Figure 72 As shown, an infrared absorption filter 30 is formed in the shape of a film. Bonding openings 30H are formed in the infrared absorption filter 30.

[0582] Next, prepare base 5 (see Figure 73 The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of the module lens (not shown).

[0583] like Figure 73As shown, the solid-state imaging element 2 is disposed at a position corresponding to the curved receiving portion 50 of the base 5. The detailed configuration and manufacturing method of the solid-state imaging element 2 are described above. The curved surface of the curved receiving portion 50 of the base 5 has a CRA configuration that allows for perpendicular incidence at any image height in a manner corresponding to the optical design of the module lens (not shown).

[0584] Furthermore, adhesive 51 is formed in the curved receiving portion 50. Adhesive 51 can be applied to the solid-state imaging element 2 on the second surface 21B side. Adhesive 51 is formed of a material similar to the material of adhesive 51 according to the first embodiment or of a material with a curing type similar to that of adhesive 51 according to the first embodiment.

[0585] Here, the recess 55 is formed in the curved receiving portion 50 of the base 5 (see...). Figure 12 The recess 55 effectively inhibits or prevents the overflow of the adhesive 51. Furthermore, a stepped portion 56 is formed in the curved receiving portion 50 (see...). Figure 13 The stepped portion 56 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2. Furthermore, a mark 57 can be formed in the base 5 (see...). Figure 14 Marker 57 allows for precise positioning of the curved receiving portion 50 and the solid-state imaging element 2.

[0586] Infrared absorption filter 30 is formed on the light-receiving surface of solid-state imaging element 2, wherein adhesive 33 is interposed therebetween (see [reference]). Figure 74 For example, a resin adhesive is used for adhesive 33, and adhesive 33 is coated onto the solid-state imaging element 2 or the infrared absorption filter 30. Alternatively, DAF can be used for adhesive 33.

[0587] like Figure 74 As shown, the clamping fixture 6 is placed on the curved receiving portion 50 of the base 5, with the solid-state imaging element 2 and the infrared absorption filter 30 interposed therebetween, and is initially pressed and installed by the clamping fixture 6. The clamping fixture 6 is provided with an end 60.

[0588] Here, a protective film can be inserted between the infrared absorption filter 30 and the end 60 of the clamping fixture 6. In this case, the protective film can effectively suppress or prevent the appearance of marks on the surface of the infrared absorption filter 30 or the solid-state imaging element 2.

[0589] like Figure 75 As shown, the adhesive 51 cures while the end 60 of the clamping fixture 6 presses against the infrared absorption filter 30 and the solid-state imaging element 2. The recess 55 absorbs excess adhesive 51. Thus, the solid-state imaging element 2 and the infrared absorption filter 30 are fixed to the curved receiving portion 50 of the base 5 in a curved shape.

[0590] Afterwards, complete the clamping process using clamping jig 6, and move clamping jig 6 in the direction of arrow -Z. If a protective film is being used, remove the protective film.

[0591] Here, when the recess 55 is formed in the curved receiving portion 50 of the base 5, the end of the recess 55 is formed in a rounded shape as described above, so as to effectively suppress or prevent stress concentration.

[0592] Based on the imaging device 1 configured as described above and the method for manufacturing the imaging device 1, an image can be obtained that is consistent with the image obtained through Figures 59 to 59. Figure 67 The imaging device 1 described herein and the method of manufacturing the imaging device 1 (pressure difference type bending mounting method) have similar effects and results.

[0593] Furthermore, the imaging device 1 does not include an infrared cut-off filter on the module lens side (not shown). This allows for a reduction in the reflective surface of the infrared cut-off filter and effectively lowers manufacturing costs. The reflective surface of the infrared cut-off filter can cause glare or ghosting.

[0594] <3. Other Implementation Methods>

[0595] This invention is not limited to the embodiments described above. For example, in this disclosure, two or more examples described for imaging apparatus 1 and the method of manufacturing imaging apparatus 1 according to the first embodiment can be combined. Similarly, in this disclosure, two or more examples described for imaging apparatus 1 and the method of manufacturing imaging apparatus 1 according to the second embodiment can be combined. Furthermore, in this disclosure, any one of the examples described for imaging apparatus 1 according to the first embodiment and the method of manufacturing imaging apparatus 1 can be combined with any one of the examples described for imaging apparatus 1 according to the second embodiment and the method of manufacturing imaging apparatus 1.

[0596] An imaging apparatus according to a first aspect of the invention includes an infrared absorption filter and a solid-state imaging element. The infrared absorption filter absorbs infrared light. The solid-state imaging element includes a substrate in which a plurality of pixels are arranged in a two-dimensional array. Each pixel includes a photoelectric conversion region that converts incident light transmitted through the infrared absorption filter into an electrical signal. The infrared absorption filter and the substrate are recessed in the incident direction of the incident light and are curved as a whole.

[0597] The imaging device configured as described above reduces the reflective surface area on the device side, which effectively suppresses or prevents glare or ghosting. As a result, degradation in color reproduction can be effectively suppressed or prevented.

[0598] In the imaging apparatus according to the second aspect of this disclosure, the infrared absorption filter in the imaging apparatus according to the first aspect includes an infrared absorption film. The infrared absorption film is formed within a pixel of a solid-state imaging element via an on-chip process. Furthermore, in addition to the infrared absorption film, the imaging apparatus according to the second aspect further includes a multilayer filter formed via an on-chip process. The multilayer filter layer includes alternately stacked high-refractive-index layers and low-refractive-index layers and has a specific transmission spectrum. The refractive index of the low-refractive-index layer is lower than that of the high-refractive-index layer.

[0599] According to the imaging device configured as described above, the multilayer filter utilizes a thin film to enhance the transmittance of visible light. As a result, the number of layers stacked in the multilayer filter can be reduced.

[0600] The imaging apparatus according to a third aspect of the invention further includes a base, which includes a curved receiving portion at a central portion on the side of the solid-state imaging element in the imaging apparatus according to the first aspect. The curved receiving portion corresponds to the curved shape of the solid-state imaging element and is recessed in the incident direction of the incident light to receive the solid-state imaging element.

[0601] According to the imaging device configured as described above, the base includes a bending housing, and the solid-state imaging element is housed in the bending housing, which makes it easy to realize the bending shape of the solid-state imaging element and the infrared absorption filter.

[0602] A method for manufacturing an imaging apparatus according to a fourth aspect of this disclosure includes: forming a solid-state imaging element comprising a substrate, wherein a plurality of pixels are arranged in a two-dimensional array in the substrate, each pixel comprising a photoelectric conversion region for converting incident light into an electrical signal; forming a base comprising a curved receiving portion and a ventilation portion at a central portion of a front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element, the ventilation portion being formed in the curved receiving portion from the central portion of the front surface to a rear surface side opposite to the central portion of the front surface; placing the solid-state imaging element in the curved receiving portion and forming an infrared absorbing filter for absorbing infrared light, the infrared absorbing filter covering the curved receiving portion, wherein the solid-state imaging element is located between the infrared absorbing filter and the curved receiving portion; and generating a pressure difference, wherein the pressure on the inner side of the curved receiving portion is less than the pressure on the side of the infrared absorbing filter, such that the solid-state imaging element and the infrared absorbing filter bend along the curved receiving portion and that the infrared absorbing filter is in close contact with a light-receiving surface of the solid-state imaging element having a plurality of pixels arranged thereon.

[0603] According to this method of manufacturing an imaging device, a base including a curved receiving portion and a ventilation portion is formed, and a pressure difference is generated on the solid imaging element placed in the curved receiving portion through the ventilation portion, which makes it possible to form the infrared absorption filter and the solid imaging element into a curved shape along the shape of the curved receiving portion.

[0604] A method for manufacturing an imaging apparatus according to a fifth aspect of this disclosure includes: forming a solid-state imaging element comprising a substrate, wherein a plurality of pixels are arranged in a two-dimensional array in the substrate, each pixel comprising a photoelectric conversion region for converting incident light into an electrical signal; forming a base comprising a curved receiving portion at a central portion of a front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element; placing the solid-state imaging element in the curved receiving portion and bringing an infrared absorbing filter for absorbing infrared light into close contact with a light-receiving surface of the solid-state imaging element having a plurality of pixels arranged thereon; and after bringing the infrared absorbing filter into close contact with the light-receiving surface of the solid-state imaging element, bending the solid-state imaging element and the infrared absorbing filter along the curved receiving portion.

[0605] According to this method of manufacturing an imaging device, a base including a curved receiving portion is formed, and an infrared absorption filter is brought into close contact with a solid-state imaging element placed in the curved receiving portion, which allows the infrared absorption filter and the solid-state imaging element to be formed along the shape of the curved receiving portion.

[0606] <Configuration of this disclosure>

[0607] This disclosure includes the following configuration. The following configuration enables the provision of an imaging apparatus capable of effectively suppressing or preventing color reproducibility degradation, as well as a method for manufacturing the imaging apparatus. (1)

[0609] An imaging device, comprising:

[0610] Infrared absorption filter, which absorbs infrared light; and

[0611] A solid-state imaging element includes a substrate, in which multiple pixels are arranged in a two-dimensional array. Each pixel includes a photoelectric conversion region that converts incident light transmitted through an infrared absorption filter into an electrical signal.

[0612] The infrared absorption filter and the substrate are recessed in the direction of incident light and are bent as a whole. (2)

[0614] According to the imaging apparatus of (1), the infrared absorption filter includes an infrared absorption film formed within the pixel of the solid-state imaging element by an on-chip process. (3)

[0616] According to the imaging device of (2), in addition to the infrared absorption film, it further includes a multilayer film filter formed by on-chip process. The multilayer film filter includes alternating stacked high refractive index layer and low refractive index layer and has a specific transmission spectrum. The refractive index of the low refractive index layer is lower than that of the high refractive index layer. (4)

[0618] An imaging apparatus according to any one of (1) to (3), wherein,

[0619] Infrared absorption filters include infrared absorption films, and

[0620] The infrared absorption film is in close contact with the light-receiving surface of the solid-state imaging element, which has multiple pixels, on which the incident light is incident. (5)

[0622] According to the imaging device of (4), the infrared absorption film extends from the light receiving surface along the side surface of the solid-state imaging element and is in close contact with the side surface. (6)

[0624] The imaging apparatus according to any one of (1) to (5) further includes a base, which includes a curved receiving portion at the central portion of the front surface on the side of the solid-state imaging element, the curved receiving portion corresponding to the curved shape of the solid-state imaging element, and the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element. (7)

[0626] The imaging apparatus according to (4) further includes a base, which includes a curved receiving portion at the central portion of the front surface on the side of the solid-state imaging element. The curved receiving portion corresponds to the curved shape of the solid-state imaging element, and the curved receiving portion is recessed in the incident direction of the incident light to receive the solid-state imaging element, wherein...

[0627] The infrared absorption film extends from the light-receiving surface of the solid-state imaging element along the peripheral portion of the front surface of the base via the side surface of the solid-state imaging element and is in close contact with the side surface of the solid-state imaging element and the peripheral portion of the front surface of the base. (8)

[0629] An imaging apparatus according to any one of (4) to (7), wherein,

[0630] Solid-state imaging elements include bonding pads on the light-receiving surface side of the substrate, and

[0631] The infrared absorbing film has an opening at the position corresponding to the bonding pad. (9)

[0633] According to the imaging apparatus of (6) or (7), the solid-state imaging element is accommodated along the curved shape of the curved receiving portion and is fixed to the curved receiving portion. (10)

[0635] According to the imaging apparatus of (9), the solid-state imaging element is housed in the curved housing without protruding outside the curved housing. (11)

[0637] An imaging apparatus according to any one of (6), (7), (9) and (10), wherein the base includes a ventilation portion in the curved receiving portion from the central portion of the front surface to the rear surface side opposite to the central portion of the front surface. (12)

[0639] According to the imaging device of (11), a porous material is formed in the ventilation section. (13)

[0641] According to the imaging device of (11), the ventilation section includes an opening that extends from the central portion of the front surface to the rear surface side. (14)

[0643] According to the imaging device of (13), the ventilation section is filled with an embedded member embedded in the opening. (15)

[0645] An imaging apparatus according to any one of (1) to (14), wherein the infrared absorption filter absorbs light in a specific wavelength range including visible light or ultraviolet light other than infrared light. (16)

[0647] A method for manufacturing an imaging device, the method comprising:

[0648] A solid-state imaging element is formed, the solid-state imaging element including a substrate, a plurality of pixels arranged in a two-dimensional array in the substrate, each pixel including a photoelectric conversion region that converts incident light into an electrical signal;

[0649] A base is formed, which includes a curved receiving portion and a ventilation portion at the central portion of the front surface of the base. The curved receiving portion is recessed in the incident direction of the incident light to accommodate a solid-state imaging element, and the ventilation portion is formed in the curved receiving portion from the central portion of the front surface to the rear surface side opposite to the central portion of the front surface.

[0650] A solid-state imaging element is placed within a curved housing and forms an infrared-absorbing filter that absorbs infrared light, the infrared-absorbing filter covering the curved housing, wherein the solid-state imaging element is positioned between the infrared-absorbing filter and the curved housing; and

[0651] A pressure difference is generated, wherein the pressure on the inner side of the bending housing is less than the pressure on the infrared absorption filter side, so that the solid-state imaging element and the infrared absorption filter bend along the bending housing and the infrared absorption filter comes into close contact with the light-receiving surface of the solid-state imaging element, which is arranged with multiple pixels. (17)

[0653] According to the method of manufacturing an imaging device according to (16), a pressure difference is generated by reducing the pressure in the curved receiving portion via a ventilation portion. (18)

[0655] According to the method of manufacturing an imaging device according to (16), a pressure difference is generated by applying pressure to the infrared absorption filter side. (19)

[0657] According to the method of manufacturing an imaging device according to (16), a pressure difference is generated by blowing pressurized gas or by clamping a clamping fixture. (20)

[0659] A method for manufacturing an imaging device, the method comprising:

[0660] A solid-state imaging element is formed, the solid-state imaging element including a substrate, a plurality of pixels arranged in a two-dimensional array in the substrate, each pixel including a photoelectric conversion region that converts incident light into an electrical signal;

[0661] A base is formed, and the base includes a curved receiving portion at the central portion of the front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to accommodate a solid-state imaging element.

[0662] The solid-state imaging element is placed in a curved housing, and an infrared-absorbing filter that absorbs infrared light is in close contact with the light-receiving surface of the solid-state imaging element, which is arranged with multiple pixels; and

[0663] After bringing the infrared absorption filter into close contact with the light-receiving surface of the solid-state imaging element, the solid-state imaging element and the infrared absorption filter are bent along the bending housing.

[0664] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 456135, filed with the U.S. Patent and Trademark Office on March 31, 2023, the entire contents of which are incorporated herein by reference.

[0665] Those skilled in the art should understand that various modifications, combinations, sub-combinations and alterations can be made according to design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. An imaging device, comprising: Infrared absorption filter, absorbs infrared light; as well as A solid-state imaging element includes a substrate, in which a plurality of pixels are arranged in a two-dimensional array. Each pixel includes a photoelectric conversion region that converts incident light transmitted through an infrared absorption filter into an electrical signal. The infrared absorption filter and the substrate are recessed in the incident direction of the incident light and are bent as a whole.

2. The imaging device according to claim 1, wherein, The infrared absorption filter includes an infrared absorption film formed on-chip within the pixel of the solid-state imaging element.

3. The imaging device according to claim 2, in addition to the infrared absorption film, further includes a multilayer film filter formed by on-chip process, the multilayer film filter including alternately stacked high refractive index layers and low refractive index layers and having a specific transmission spectrum, wherein the refractive index of the low refractive index layer is lower than the refractive index of the high refractive index layer.

4. The imaging device according to claim 1, wherein, The infrared absorption filter includes an infrared absorption film, and The infrared absorption film is in close contact with the light-receiving surface of the solid-state imaging element, where the incident light is incident, and where the plurality of pixels are arranged.

5. The imaging apparatus according to claim 4, wherein, The infrared absorption film extends from the light-receiving surface along the side surface of the solid-state imaging element and is in close contact with the side surface.

6. The imaging apparatus of claim 1, further comprising a base, the base including a bending receiving portion at the central portion of the front surface on the side of the solid-state imaging element, the bending receiving portion corresponding to the bending shape of the solid-state imaging element, and the bending receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element.

7. The imaging apparatus of claim 4, further comprising a base, the base including a curved receiving portion at the central portion of the front surface on the side of the solid-state imaging element, the curved receiving portion corresponding to the curved shape of the solid-state imaging element, and the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element, wherein, The infrared absorbing film extends from the light-receiving surface of the solid-state imaging element along the peripheral portion of the front surface of the base via the side surface of the solid-state imaging element and is in close contact with the side surface of the solid-state imaging element and the peripheral portion of the front surface of the base.

8. The imaging apparatus according to claim 4, wherein, The solid-state imaging element includes bonding pads on the light-receiving surface side of the substrate, and The infrared absorbing film has an opening at a position corresponding to the bonding pad.

9. The imaging apparatus according to claim 6, wherein, The solid-state imaging element is housed along the curved shape of the curved receiving portion and is fixed to the curved receiving portion.

10. The imaging apparatus according to claim 9, wherein, The solid-state imaging element is housed within the curved housing without protruding outside the curved housing.

11. The imaging apparatus according to claim 6, wherein, The base includes a ventilation section in the curved receiving portion from the central portion of the front surface to the rear surface side opposite the central portion of the front surface.

12. The imaging apparatus according to claim 11, wherein, Porous material is formed in the ventilation section.

13. The imaging apparatus according to claim 11, wherein, The ventilation section includes an opening that extends from the central portion of the front surface to the rear surface side.

14. The imaging apparatus according to claim 13, wherein, The ventilation section is filled with an embedded member embedded in the opening.

15. The imaging apparatus according to claim 1, wherein, The infrared absorption filter absorbs light within a specific wavelength range, including visible light or ultraviolet light, in addition to infrared light.

16. A method of manufacturing an imaging device, the method comprising: A solid-state imaging element is formed, the solid-state imaging element including a substrate, a plurality of pixels arranged in a two-dimensional array in the substrate, each pixel including a photoelectric conversion region that converts incident light into an electrical signal; A base is formed, the base including a curved receiving portion and a ventilation portion at the central portion of the front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to receive the solid-state imaging element, and the ventilation portion being formed in the curved receiving portion from the central portion of the front surface to the rear surface side opposite to the central portion of the front surface. The solid-state imaging element is placed within the curved receiving portion and forms an infrared absorbing filter that absorbs infrared light, the infrared absorbing filter covering the curved receiving portion, wherein the solid-state imaging element is positioned between the infrared absorbing filter and the curved receiving portion; and A pressure difference is generated, wherein the pressure on the inner side of the bending housing is less than the pressure on the infrared absorption filter side, so that the solid-state imaging element and the infrared absorption filter bend along the bending housing and the infrared absorption filter comes into close contact with the light-receiving surface of the solid-state imaging element on which the plurality of pixels are arranged.

17. The method of manufacturing an imaging device according to claim 16, wherein, The pressure difference is generated by reducing the pressure in the curved receiving section via the ventilation section.

18. The method of manufacturing an imaging device according to claim 16, wherein, The pressure difference is generated by applying pressure to the infrared absorption filter side.

19. The method of manufacturing an imaging device according to claim 18, wherein, The pressure difference is generated by blowing pressurized gas or by clamping with a clamping fixture.

20. A method of manufacturing an imaging device, the method comprising: A solid-state imaging element is formed, the solid-state imaging element including a substrate, a plurality of pixels arranged in a two-dimensional array in the substrate, each pixel including a photoelectric conversion region that converts incident light into an electrical signal; A base is formed, the base including a curved receiving portion at the central portion of the front surface of the base, the curved receiving portion being recessed in the incident direction of the incident light to accommodate the solid-state imaging element; The solid-state imaging element is placed in the curved receiving portion, and the infrared absorbing filter that absorbs infrared light is in close contact with the light-receiving surface of the solid-state imaging element on which the plurality of pixels are arranged. as well as After bringing the infrared absorption filter into close contact with the light-receiving surface of the solid-state imaging element, the solid-state imaging element and the infrared absorption filter are bent along the bending housing.

Images