Layout and mask layout correction method, electronic equipment and readable storage medium

Abstract

The invention provides a method for correcting a layout. The method comprises the following steps of: acquiring a to-be-corrected main graph from all main graphs; in the direction perpendicular to the first edge, the first edge of the to-be-corrected main graph is moved in the direction facing the adjacent reference graph until the second interval is reduced to a third preset value, so that the interval between the two adjacent to-be-corrected main graphs is increased, and the limitation rule is not violated; judging the size relationship between the third spacing and a second preset value, so as to obtain a first edge of the to-be-corrected main graph of which the third spacing is smaller than the second preset value according to a judgment result; the obtained first edge of the to-be-corrected main graph with the third interval smaller than a second preset value is cut into a plurality of line segments, and a to-be-corrected line segment is obtained from all the line segments; in the direction perpendicular to the first edge, the line segment to be corrected is moved towards the direction facing the adjacent reference pattern. Therefore, the distance between the two adjacent main patterns to be corrected can be increased without violating restriction rules, and the problem of bridging between photoetching patterns is reduced or avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a layout and mask layout correction method, electronic equipment and readable storage medium. BACKGROUND

[0002] With the development of semiconductor technology, the key size of semiconductor structure is reduced, and the optical proximity effect in the photoetching process cannot be ignored or even affects the process flow. The optical proximity effect correction (OPC) technology has become a necessary means to make the exposure pattern meet the process requirements of each node. Figure 1 As shown in the figure, in the photoetching process, there are main patterns 10 with design size close to the process limit, and the spacing A between adjacent main patterns 10 is small, which causes the adjacent main patterns 10 to form a bridge phenomenon between the photoetching patterns, so the main pattern 10 correction processing is needed to meet the process requirements. At present, the method of moving adjacent main patterns 10 is usually used to realize the correction, but some main patterns 10 also have reference patterns 11, and the edge of the main pattern 10 needs to maintain a certain spacing B with the edge of the reference pattern 11, that is, there is a certain relationship between the two, so the relationship between the main pattern 10 and the reference pattern 11 will be limited in the correction process. In the case that the spacing A between adjacent two main patterns 10 is small, it is difficult to realize the correction processing of the main pattern 10. SUMMARY

[0003] The purpose of the present application is to provide a layout and mask layout correction method, electronic equipment and readable storage medium to reduce or avoid the problem of bridge between adjacent photoetching patterns.

[0004] To solve the above technical problems, the present application provides a layout correction method, comprising:

[0005] An original layout is provided, which includes at least two spaced main patterns, at least one of which has a reference pattern, the main pattern includes first and second edges parallel to each other and equal in length, the first edges of adjacent two main patterns are adjacent and have a first spacing, the reference pattern includes third and fourth edges parallel to each other and equal in length, the third edge is adjacent to the first edge and the third edge has a second spacing with the first edge;

[0006] A main pattern to be corrected is obtained from all the main patterns, which is the main pattern with the length of the first edge greater than a first preset value and the first spacing less than a second preset value;

[0007] moving the first edge in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern until the second distance is reduced to a third preset value, so as to increase the first distance to a third distance;

[0008] judging a size relationship between the third distance and the second preset value, so as to obtain a to-be-corrected main pattern with the third distance smaller than the second preset value according to a judging result;

[0009] cutting a first edge of the to-be-corrected main pattern with the third distance smaller than the second preset value into a plurality of line segments, and obtaining a to-be-corrected line segment from all the line segments, wherein an end of the to-be-corrected line segment and an end of the third edge have a fourth distance therebetween in a direction parallel to the first edge, and the fourth distance is equal to or greater than a fourth preset value; and

[0010] moving the to-be-corrected line segment in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern.

[0011] Optionally, in the layout correction method, the main pattern has a strip shape, and the reference pattern has a rectangular shape.

[0012] Optionally, in the layout correction method, the method of moving the first edge in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern includes moving the first edge in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern through a loop algorithm until the second distance is reduced to the third preset value.

[0013] Optionally, in the layout correction method, the third edge and the first edge are arranged in parallel to each other, and a length of the third edge is smaller than a length of the first edge.

[0014] Optionally, in the layout correction method, the to-be-corrected line segment is located on both sides of the third edge, and a projection of the to-be-corrected line segment and a projection of the third edge do not overlap in a length direction and a width direction of the to-be-corrected main pattern.

[0015] Optionally, in the layout correction method, the first edge is cut according to a projection of the end of the third edge in the to-be-corrected main pattern and the fourth preset value, wherein the fourth preset value is a minimum value of the fourth distance.

[0016] Optionally, in the layout modification method, the to-be-modified line segment has a fifth spacing with the second side, and the method of moving the to-be-modified line segment towards the direction of the adjacent reference pattern comprises: gradually moving the to-be-modified line segment towards the direction of the adjacent reference pattern by a loop algorithm to increase the third spacing, and the fifth spacing is greater than or equal to the fifth preset value.

[0017] Based on the same inventive concept, the present application further provides a layout modification method of a mask plate, comprising:

[0018] providing an initial layout;

[0019] performing optical proximity correction on the initial layout to obtain a layout of a mask plate by using the layout modification method.

[0020] Based on the same inventive concept, the present application further provides an electronic device comprising a processor and a memory connected with the processor;

[0021] a processor and a memory connected with the processor, wherein the memory stores computer execution instructions, and the processor is configured to execute the computer execution instructions stored in the memory to implement the layout modification method.

[0022] Based on the same inventive concept, the present application further provides a readable storage medium, wherein the readable storage medium stores computer instructions, and the computer instructions are executed by a processor to implement the layout modification method.

[0023] In the layout modification method provided by the application, first, the to-be-modified main patterns are obtained from all the main patterns, the to-be-modified main patterns are the main patterns whose first side length is greater than a first preset value and whose first interval is less than a second preset value; then, in the direction perpendicular to the first side, the first side is moved towards the direction facing the adjacent reference pattern until the second interval is reduced to a third preset value, so that the first interval is increased to the third interval, that is, the interval between the two adjacent to-be-modified main patterns is increased, and the second interval is reduced to the third preset value, thus the restriction rule between the main patterns and the reference patterns is not violated; then, the size relationship between the third interval and the second preset value is judged to obtain the to-be-modified main pattern whose third interval is less than the second preset value according to the judgment result; the first side of the to-be-modified main pattern whose third interval is less than the second preset value is divided into a plurality of line segments, and the to-be-modified line segment is obtained from all the line segments, in the direction parallel to the first side, the end of the to-be-modified line segment and the end of the third side have a fourth interval, and the fourth interval is equal to or greater than a fourth preset value; and in the direction perpendicular to the first side, the to-be-modified line segment is moved towards the direction facing the adjacent reference pattern. In this way, the interval between the to-be-modified line segment and the to-be-modified line segment of the other to-be-modified main pattern adjacent to it can be increased, that is, the interval between the two adjacent to-be-modified main patterns is increased again, and the end of the to-be-modified line segment and the end of the third side have a fourth interval, and the fourth interval is equal to or greater than a fourth preset value, thus the restriction rule between the main patterns and the reference patterns is not violated, that is, the interval between the two adjacent to-be-modified main patterns can be increased without violating the restriction rule, thereby the problem of bridge between the photolithography patterns formed by the adjacent to-be-modified main patterns can be reduced or avoided. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 is a schematic diagram of the pattern in the existing layout modification process;

[0025] Figure 2 is a flowchart of the layout modification method provided by the embodiment of the application;

[0026] Figure 3 is a schematic diagram of the structure of a raw layout in the layout modification method provided by the embodiment of the application;

[0027] Figure 4 is a schematic diagram of the structure of another raw layout in the layout modification method provided by the embodiment of the application;

[0028] Figures 5 to 8 is a schematic diagram of the layout structure formed in the layout modification method provided by the embodiment of the application;

[0029] Figure 9 is a flowchart of the mask layout modification method provided by the embodiment of the application;

[0030] Wherein, the reference signs are explained as follows:

[0031] 10 - main pattern; 11 - reference pattern;

[0032] 100 - original layout; 110 - main pattern; 110A - first side; 110B - second side; 111 - main pattern to be corrected; 111A - line segment to be corrected; 120 - reference pattern; 120A - third side; 120B - fourth side. DETAILED DESCRIPTION

[0033] The layout and mask layout correction method, electronic device and readable storage medium provided by the present application will be further described in detail below in combination with the drawings and specific embodiments. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are all very simplified and use non-precise proportions, only for the purpose of facilitating and clearly assisting the description of the embodiments of the present application.

[0034] Figure 2 is a flowchart of the layout correction method provided by the embodiment of the present application. As shown in Figure 2 , the embodiment provides a layout correction method, comprising:

[0035] Step S1: providing an original layout, the original layout comprising a plurality of spaced main patterns, at least one of the main patterns having a reference pattern, the main pattern comprising a first side and a second side parallel to each other and equal in length, the first sides of two adjacent main patterns being adjacent and having a first spacing, the reference pattern comprising a third side and a fourth side parallel to each other and equal in length, the third side being adjacent to the first side and having a second spacing between the third side and the first side;

[0036] Step S2: obtaining a main pattern to be corrected from all the main patterns, the main pattern to be corrected being a main pattern whose first side length is greater than a first preset value and whose first spacing is less than a second preset value;

[0037] Step S3: moving the first side in a direction perpendicular to the first side towards a direction facing the adjacent reference pattern until the second spacing is reduced to a third preset value, so as to increase the first spacing to a third spacing;

[0038] Step S4: judging the size relationship between the third spacing and the second preset value to obtain a main pattern to be corrected whose third spacing is less than the second preset value according to the judgment result;

[0039] Step S5: cutting the first edge of the main pattern to be corrected, whose third distance is less than the second preset value, into a plurality of line segments, and obtaining a to-be-corrected line segment from all the line segments, wherein the to-be-corrected line segment has a fourth distance between the end thereof and the end of the third edge in a direction parallel to the first edge, and the fourth distance is equal to or greater than a fourth preset value; and

[0040] Step S6: moving the to-be-corrected line segment in a direction facing the adjacent reference layer in a direction perpendicular to the first edge.

[0041] Figure 3 is a structural schematic diagram of a raw layout in a layout correction method provided by an embodiment of the present application; Figure 4 is a structural schematic diagram of another raw layout in a layout correction method provided by an embodiment of the present application; Figures 5 to 8 is a structural schematic diagram of a layout formed in a layout correction method provided by an embodiment of the present application. Details will be described below with reference to the accompanying drawings. Figures 3 to 8 The layout correction method provided by the embodiment will be described in more details.

[0042] Reference Figure 3 Step S1 is performed to provide a raw layout 100, which includes a plurality of main patterns 110 arranged at intervals, at least one of the main patterns 110 has a reference layer 120, the main pattern 110 includes a first edge 110A and a second edge 110B parallel to each other and equal in length, and the first edges 110A of two adjacent main patterns 110 are adjacent and have a first distance A. The reference layer 120 includes a third edge 120A and a fourth edge 120B parallel to each other and equal in length, the third edge 120A is adjacent to the first edge 110A, and the third edge 120A and the first edge 110A have a second distance B. It should be noted that the first edges 110A of two adjacent main patterns 110 can be adjacent, or the second edges 110B of two adjacent main patterns 110 can be arranged adjacent to each other, the first distance A is the distance between the adjacent edges (here, the first edges 110A) of two adjacent main patterns 110, and the embodiment is described by taking the first edges 110A of two adjacent main patterns 110 as an example. The raw layout 100 is used for a design pattern for forming a mask layout subsequently.

[0043] In the embodiment, as shown in Figure 3 all the main patterns 110 can be arranged at intervals along the width direction of the main pattern 110 and arranged staggered along the length direction of the main pattern 110, that is, the ends of adjacent main patterns 110 are staggered.

[0044] In another embodiment, asFigure 4 As shown, all the main graphics 110 can be arranged sequentially along the width direction, that is, the ends of adjacent main graphics 110 are aligned.

[0045] like Figure 3 As shown, the number of reference graphics 120 in the main graphic 110 can be one or more, such as two, three, or four. The main graphic 110 and its reference graphics 120 are spaced apart, meaning there is a gap between each side of the main graphic 110 and each side of the reference graphics 120. When the number of reference graphics 120 in each main graphic 110 is two or more, all the reference graphics 120 in the main graphic 110 are spaced apart. It should be noted that this embodiment uses two reference graphics 120 in each main graphic 110 as an example for illustration. For cases with more reference graphics 120, the actual situation is similar to this example, for example... Figure 3 The main graphic 110 can have more than three reference graphics 120, and all reference graphics 120 are spaced apart.

[0046] In this embodiment, the main pattern 110 is, for example, a gate pattern, meaning that the main pattern 110 can be used to fabricate a gate, but it is not limited to this; the main pattern 110 can also be other patterns. The shape of the main pattern 110 can be elongated.

[0047] The reference pattern 120 is, for example, a through-hole pattern, meaning that the reference pattern 120 can be used to fabricate through-holes. The reference pattern 120 can be rectangular. The size of the reference pattern 120 differs from the size of the main pattern 110; the length of the reference pattern 120 is less than the length of the main pattern 110, and the width of the reference pattern 120 is less than the width of the main pattern 110.

[0048] like Figure 3 As shown, the third side 120A is arranged parallel to the first side 110A, that is, the first side 110A, the second side 110B, the third side 120A and the fourth side 120B are arranged parallel to each other.

[0049] Next, refer to Figure 5 Step S2 is executed, whereby a main graphic 111 to be corrected is obtained from all the main graphics 110. The main graphic 111 to be corrected is a main graphic 110 whose length of the first side 110A is greater than a first preset value and whose first spacing A is less than a second preset value. The main graphic 111 to be corrected has an elongated structure. The first preset value can be two to three times the minimum length of the first side 110A, and the minimum length of the first side 110A can be set according to specific process requirements.

[0050] Specifically, in the modification process of the original layout 100, there is an enclose relationship (enclosing or enclosing relationship between graphics) between graphics Limitation, that is, the original layout 100 limitation rule needs to be met, and the original layout 100 limitation rule includes the limitation rule between the main graphic 110 and the reference graphic 120, for example, the minimum spacing rule needs to be met between the first edge 110A and the third edge 120A, in order to reduce or avoid the bridging of the main graphic 110 and the reference graphic 120 in the photolithography process. Wherein, the second preset value is the value of the minimum spacing (or the minimum value of the second spacing B) that needs to be met between the first edge 110A and the third edge 120A, thereby, the second preset value can be used to further screen all the main graphics 110, thereby obtaining the main graphic 111 to be modified.

[0051] In this embodiment, the first spacing A between adjacent main graphics 111 to be modified in all main graphics 111 to be modified is less than the second preset value, wherein the first spacing A between some adjacent main graphics 111 to be modified in all main graphics 111 to be modified can be different.

[0052] Then, with reference to Figure 6 , step S3 is performed, and the first edge 110A is moved in a direction facing the adjacent reference graphic 120 in a direction perpendicular to the first edge 110A until the second spacing B is reduced to a third preset value, so that the first spacing A is increased to a third spacing C. Specifically, the first edge 110A can be gradually moved in a direction facing the adjacent reference graphic 120 by a loop algorithm until the second spacing B is reduced to a third preset value, so as to increase the spacing between the first edge 110A and the first edge 110A of the other main graphic 111 to be modified adjacent to the first edge 110A, that is, to increase the spacing between the adjacent main graphics 111 to be modified.

[0053] Wherein, when the first edge 110A is moved, the whole of the first edge 110A can be moved, or only part of the first edge 110A, for example, two adjacent to-be-corrected main patterns 111 are misaligned, that is, part of the first edges 110A of the two adjacent to-be-corrected main patterns 111 overlap, then only the overlapping part of the first edges 110A of the two adjacent to-be-corrected main patterns 111 can be moved. Further, before the first edge 110A is moved, a bias of the first edge 110A relative to the third edge 120A can be calculated according to the third preset value and the second spacing B; then the first edge 110A is moved step by step with the display precision of the layout as the minimum moving distance, and the upper limit of the moving distance of the first edge 110A is the bias, so that the second spacing B is reduced to the third preset value, thereby ensuring that the second spacing B is greater than or equal to the third preset value. Wherein, the third preset value is the minimum value of the second spacing B, that is, the minimum spacing required between the first edges 110A of the adjacent to-be-corrected main patterns 111, therefore, under the premise of not violating the restriction rules between the main pattern 110 and the reference pattern 120, the spacing between the two adjacent to-be-corrected main patterns 111 can be increased, effectively reducing or avoiding the problem of bridging between the adjacent to-be-corrected main patterns 111 in the photolithography process.

[0054] Then, step S4 is performed to judge the size relationship between the third spacing C and the second preset value, so as to obtain the to-be-corrected main pattern 111 with the third spacing C smaller than the second preset value according to the judgment result. If the third spacing C is too small, the distance between the first edges 110A of the two adjacent to-be-corrected main patterns 111 cannot be large enough, that is, the third spacing C still does not satisfy the minimum spacing rule in the restriction rules, and the problem of bridging between the photolithography patterns formed by the adjacent to-be-corrected main patterns 111 cannot be effectively improved. Therefore, by judging the size relationship between the third spacing C and the second preset value, the to-be-corrected main pattern 111 with the third spacing C smaller than the second preset value can be screened out, so that the first edge 110A of the to-be-corrected main pattern 111 can be corrected again.

[0055] Then, referring to Figure 7 , step S5 is performed to divide the first edge 110A of the to-be-corrected main pattern 111 with the third spacing C smaller than the second preset value into a plurality of line segments, and to obtain a to-be-corrected line segment 111A from all the line segments, wherein the end of the to-be-corrected line segment 111A and the end of the third edge 120A have a fourth spacing D in the direction parallel to the first edge 110A, and the fourth spacing D is equal to or greater than a fourth preset value, which is the minimum value of the fourth spacing D. Wherein, the direction parallel to the first edge 110A is perpendicular to the direction perpendicular to the first edge 110A.

[0056] In the embodiment, the to-be-corrected line segment 111A is a partial line segment of the first edge 110A that does not violate the restriction rule. After step S3 is performed, there is still a case that the third distance C between the first edges 110A of the adjacent to-be-corrected main patterns 111 is less than the second preset value, and the second distance B between the third edge 120A and the first edge 110A has been reduced to the third preset value. If the first edge 110A is continuously moved, the second distance B will be further reduced, thereby violating the restriction rule of the original layout 100. Therefore, in the embodiment, the first edge 110A of the to-be-corrected main pattern 111 is divided into a plurality of line segments, and the to-be-corrected line segment 111A is obtained from all the line segments. In this way, the distance between the to-be-corrected line segment 111A and the to-be-corrected line segment 111A of the adjacent to-be-corrected main pattern 111 can be increased without violating the restriction rule, thereby increasing the distance between the adjacent to-be-corrected main patterns 111.

[0057] In the embodiment, the first edge 110A can be divided according to the projection of the two end points of the third edge 120A in the to-be-corrected main pattern 111 and the fourth preset value (or the value of the preset offset), so that the to-be-corrected line segment 111A is located on both sides of the third edge 120A (as shown in Figure 7 In the vertical direction of the first edge 110A and the parallel direction of the first edge 110A, the projection of the to-be-corrected line segment 111A does not overlap with the projection of the third edge 120A, so that when the to-be-corrected line segment 111A is moved in the vertical direction of the first edge 110A in the subsequent step, the second distance B will not be affected, and thus the restriction rule will not be violated.

[0058] Next, referring to Figure 8 , step S6 is performed, and the to-be-corrected line segment 111A is moved in the direction facing the adjacent reference pattern 120 in the vertical direction of the first edge 110A.

[0059] As shown in Figure 8 , the to-be-corrected line segment 111A and the second edge 110B have a fifth distance E. The to-be-corrected line segment 111A can be gradually moved in the direction facing the adjacent reference pattern 120 by a loop algorithm to increase the third distance C, and the fifth distance E is greater than or equal to a fifth preset value, that is, the fifth distance E is reduced, for example, to the fifth preset value, thereby increasing the third distance C. The increased third distance C can be equal to or greater than the second preset value, or less than the second preset value. In the embodiment, the to-be-corrected line segment 111A can be gradually moved by taking the display precision of the layout as the minimum moving distance.

[0060] In the embodiment, the fifth preset value is a minimum value of the fifth distance E, i.e., a minimum distance between the to-be-corrected line segment 111A and the second side 110B, and when the fifth distance E is reduced to the fifth preset value, the movement of the to-be-corrected line segment 111A is stopped. In this way, the distance between the to-be-corrected line segment 111A and the to-be-corrected line segment 111A of another adjacent to-be-corrected main graphic 111 can be increased without violating the restriction rule, so that the distance between the two adjacent to-be-corrected main graphics 111 is increased, the problem of bridging between the photolithography patterns formed by the adjacent to-be-corrected main graphics 111 can be reduced or avoided, and the circuit performance and product yield can be effectively improved.

[0061] Figure 9 is a flowchart of the method for correcting a mask layout provided by the embodiment of the application. As shown in Figure 9 the embodiment, the embodiment also provides a method for correcting a mask layout, which comprises the following steps:

[0062] Step S10: providing an initial layout;

[0063] Step S20: performing optical proximity correction on the initial layout by using the method for correcting a layout to obtain a mask layout. The mask layout comprises a main mask graphic and a reference mask graphic. The main mask graphic comprises a graphic obtained by using the method for correcting a layout on a main graphic in the initial layout. The reference mask graphic comprises a reference graphic in the initial layout.

[0064] The embodiment also provides an electronic device, which comprises a processor and a memory connected to the processor in communication. The memory stores computer execution instructions, and the processor is configured to execute the computer execution instructions stored in the memory to implement the method for correcting a layout provided by the embodiment of the application. The processor can be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiment of the application. The memory is configured to store the computer execution instructions. The memory can comprise a high-speed RAM memory and / or a nonvolatile memory.

[0065] The embodiment also provides a readable storage medium, which stores computer instructions. When the computer instructions are executed by a processor, the method for correcting a layout provided by the above-mentioned embodiment is implemented.

[0066] As can be seen from the above, in the layout modification method provided by the embodiment of the present application, the to-be-modified main patterns are first obtained from all the main patterns, the to-be-modified main patterns are the main patterns whose first edges have lengths greater than the first preset value and whose first intervals are less than the second preset value; then, in the direction perpendicular to the first edge, the first edge is moved towards the direction facing the adjacent reference pattern until the second interval is reduced to the third preset value, so that the first interval is increased to the third interval, that is, the interval between the two adjacent to-be-modified main patterns is increased, and the second interval is reduced to the third preset value, thus the restriction rule between the main patterns and the reference patterns is not violated; next, the size relationship between the third interval and the second preset value is judged to obtain the first edge of the to-be-modified main pattern whose third interval is less than the second preset value according to the judgment result; the first edge of the to-be-modified main pattern whose third interval is less than the second preset value is divided into a plurality of line segments, and the to-be-modified line segment is obtained from all the line segments, the end portion of the to-be-modified line segment and the end portion of the third edge have a fourth interval, and the fourth interval is equal to or greater than the fourth preset value; and in the direction perpendicular to the first edge, the to-be-modified line segment is moved towards the direction facing the adjacent reference pattern. In this way, the interval between the to-be-modified line segment and the to-be-modified line segment of the other to-be-modified main pattern adjacent to the to-be-modified line segment can be increased, that is, the interval between the two adjacent to-be-modified main patterns is increased again, and the end portion of the to-be-modified line segment and the end portion of the third edge have a fourth interval, and the fourth interval is equal to or greater than the fourth preset value, thus the restriction rule between the main patterns and the reference patterns is not violated, that is, the interval between the two adjacent to-be-modified main patterns can be increased without violating the restriction rule, so that the problem of bridging between the photolithography patterns formed by the adjacent to-be-modified main patterns can be reduced or avoided.

[0067] In addition, it should be appreciated that although the present application has been disclosed with the above preferred embodiments, the above embodiments are not intended to limit the present application. Any person skilled in the art can make many possible changes and modifications to the technical solutions of the present application disclosed above, or modify equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of the present application. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application, without departing from the content of the technical solutions of the present application, shall still fall within the scope of protection of the technical solutions of the present application.

Claims

1. A method of modifying a layout, characterized by, The method comprises the following steps: providing an original layout, the original layout comprising at least two main patterns arranged at intervals, at least one of the main patterns having a reference pattern, the main pattern comprising a first edge and a second edge parallel to each other and equal in length, the first edges of two adjacent main patterns being adjacent and having a first interval, the reference pattern comprising a third edge and a fourth edge parallel to each other and equal in length, the third edge being adjacent to the first edge and having a second interval with the first edge; obtaining a main pattern to be corrected from all the main patterns, the main pattern to be corrected being a main pattern whose length of the first edge is greater than a first preset value and whose first interval is less than a second preset value; moving the first edge in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern until the second interval is reduced to a third preset value, so that the first interval is increased to a third interval; judging the size relationship between the third interval and the second preset value to obtain a main pattern to be corrected according to the judging result, the main pattern to be corrected being a main pattern whose third interval is less than the second preset value; cutting the first edge of the main pattern to be corrected whose third interval is less than the second preset value into a plurality of line segments, and obtaining a line segment to be corrected from all the line segments, the line segment to be corrected having a fourth interval between the end of the line segment to be corrected and the end of the third edge in a direction parallel to the first edge, and the fourth interval being equal to or greater than a fourth preset value; and moving the line segment to be corrected in a direction perpendicular to the first edge towards a direction facing the adjacent reference pattern.

2. The layout modification method of claim 1, wherein The main pattern is in the shape of a long strip, and the reference pattern is in the shape of a rectangle.

3. The layout modification method of claim 1, wherein The method of moving the first edge towards a direction facing the adjacent reference pattern comprises moving the first edge towards a direction facing the adjacent reference pattern by a loop algorithm until the second interval is reduced to the third preset value.

4. The layout modification method of claim 1, wherein The third edge is parallel to the first edge, and the length of the third edge is less than the length of the first edge.

5. The layout modification method of claim 4, wherein The line segment to be corrected is located on both sides of the third edge, and the projection of the line segment to be corrected and the projection of the third edge do not overlap in a direction perpendicular to the first edge and a direction parallel to the first edge.

6. The layout modification method of claim 1, wherein The first edge is cut according to the projection of the end of the third edge in the main pattern to be corrected and the fourth preset value, wherein the fourth preset value is the minimum value of the fourth interval.

7. The method of modifying a layout as recited in claim 1, wherein, The line segment to be corrected has a fifth interval with the second edge, and the method of moving the line segment to be corrected towards a direction facing the adjacent reference pattern comprises moving the line segment to be corrected towards a direction facing the adjacent reference pattern step by step by a loop algorithm to increase the third interval, and the fifth interval is greater than or equal to the fifth preset value.

8. A method of modifying a mask layout, characterized by, The method comprises the following steps: providing an original layout; performing optical proximity correction on the initial layout to obtain a mask layout by using the layout correction method according to any one of claims 1 to 7.

9. An electronic device, comprising: The method comprises the following steps: A processor and a memory connected with the processor in communication, the memory storing computer-executable instructions, and the processor configured to execute the computer-executable instructions stored in the memory to implement the method for modifying a layout according to any one of claims 1 to 7.

10. A readable storage medium, characterized by, The readable storage medium stores computer instructions, and the computer instructions are executed by a processor to implement the method for modifying a layout according to any one of claims 1 to 7.

Images