A method and structure for rapid detection of strain gauge resistance

Abstract

The application discloses a kind of strain gauge resistance rapid detection method and structure, wherein the method comprises: preparing the row resistance scanning line corresponding to the number of rows of sensitive grid array and the column resistance scanning line corresponding to the number of columns of sensitive grid array on the sensitive grid array of first strain gauge array bulk;Row resistance scanning line and column resistance scanning line are connected to resistance detector, and resistance detector is controlled to select row resistance scanning line and column resistance scanning line, and then the resistance value corresponding to each sensitive grid is obtained;In response to the resistance value detection of each sensitive grid, laser cutting is carried out to each first lead-out wire and second lead-out wire, so that each sensitive grid is separated from row resistance scanning line and column resistance scanning line.The application improves the detection efficiency of the plurality of sensitive grid resistance values of common substrate.

Description

Technical Field

[0001] This invention relates to the field of strain gauge testing, and in particular to a method and structure for rapid testing of strain gauge resistance. Background Technology

[0002] A strain gauge is a component used to measure strain, consisting of a sensitive grid and other elements. The working principle of a resistance strain gauge is based on the strain effect, which is that when a conductor or semiconductor material undergoes mechanical deformation under the action of an external force, its resistance value changes accordingly. This phenomenon is called the "strain effect".

[0003] The applications of strain gauges have permeated multiple fields of industry, scientific research, and daily life. In structural health monitoring, they are used to monitor stress and deformation in bridges, buildings, and aircraft; for example, over 2,000 strain gauges were deployed in the static testing of the Boeing 767 aircraft. Materials mechanics testing relies on their high-precision data to support research and development. The automotive industry improves safety by monitoring suspension and braking systems. In the biomedical field, miniature strain gauges are used to measure physiological parameters such as heart rate and blood pressure. Furthermore, from electronic scales and torque sensors to smartphone drop tests, strain gauges, with their small size and high sensitivity, have become a core sensor connecting the physical and digital worlds, continuously driving the development of intelligent monitoring and automated control.

[0004] Because strain gauges require high precision, the resistance value of the sensing grid is strictly controlled during the manufacturing process. After the sensing grid is fabricated, its resistance needs to be tested to ensure it meets the accuracy requirements. Current technology typically uses a probe to contact the electrodes of the sensing grid to detect the resistance. However, probe testing cannot simultaneously test multiple sensing grids. Furthermore, since strain gauge fabrication usually involves multiple strain gauges being manufactured simultaneously on the same substrate, probe testing becomes inefficient. Summary of the Invention

[0005] In view of the aforementioned deficiencies of the prior art, the technical problem to be solved by the present invention is to provide a method and structure for rapid detection of strain gauge resistance, which aims to improve the detection efficiency of multiple sensitive gate resistance values ​​on a common substrate.

[0006] To achieve the above objectives, the first aspect of the present invention discloses a method for rapid detection of strain gauge resistance, the method comprising:

[0007] Step S1: On the sensitive gate array of the first strain gauge array, row resistance scan lines corresponding to the number of rows of the sensitive gate array and column resistance scan lines corresponding to the number of columns of the sensitive gate array are prepared; the row resistance scan lines include first lead wires connected to the first lead electrodes of each sensitive gate in the corresponding row, and the column resistance scan lines include second lead wires connected to the second lead electrodes of each sensitive gate in the corresponding column; wherein, the row resistance scan lines and the column resistance scan lines are insulated from each other, and the first strain gauge array includes a substrate layer and a sensitive gate layer, and the sensitive gate layer includes a sensitive gate array composed of a plurality of sensitive gates arranged in an array;

[0008] Step S2: Connect the row resistance scan line and the column resistance scan line to the resistance detector, and control the resistance detector to select the row resistance scan line and the column resistance scan line to obtain the resistance value corresponding to each of the sensitive gates; wherein, the row resistance scan line and the column resistance scan line that are simultaneously connected and selected are the sensitive gates under test.

[0009] Step S3: In response to the detection of the resistance value of each of the sensitive gates, laser cutting is performed on each of the first lead wires and the second lead wires to separate each of the sensitive gates from the row resistance scan line and the column resistance scan line.

[0010] Optionally, when the first strain gauge array is a metal foil strain gauge array, step S1 includes:

[0011] Photolithography is performed on the sensitive gate layer of the first strain gauge array to obtain the sensitive gate array, the row resistance scan lines, and the column resistance scan lines; wherein the row resistance scan lines and the column resistance scan lines are cross-connected.

[0012] Photolithography is performed at the intersection of the row resistance scan line and the column resistance scan line to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a first insulating layer is prepared at the intersection, spanning the complete scan line, and a first conductive pattern is prepared on the first insulating layer to connect the broken scan line.

[0013] Optionally, when the first strain gauge array is a semiconductor strain gauge array, step S1 includes:

[0014] A first metal layer is fabricated on the sensitive gate layer of the first strain gauge array, and photolithography is performed on the first metal layer to obtain the row resistance scan lines and the column resistance scan lines; wherein, the sensitive gate array in the sensitive gate layer has been fabricated.

[0015] Photolithography is performed at the intersection of the row resistance scan line and the column resistance scan line to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a second insulating layer is prepared at the intersection, spanning the complete scan line, and a second conductive pattern is prepared on the first insulating layer to connect the broken scan line.

[0016] Optionally, step S2 may further include:

[0017] Based on the material, effective length, and cross-sectional area of ​​the selected row and column resistance scan lines, a first additional resistance value for the row and column resistance scan lines in the corresponding resistance detection is obtained; wherein, the effective length is the length portion of the loop formed by the selected row and column resistance scan lines and the corresponding sensitive gate;

[0018] Based on the first additional resistance value and the first measured resistance value, the first actual resistance value of the sensitive gate is obtained; wherein, the first measured resistance value is the direct measured resistance value of the resistance detector.

[0019] Optionally, the row resistance scan line includes a row scan trunk line and a first lead wire, the row scan trunk line being connected to the first lead electrode of each of the sensitive gates through each of the first lead wires; the column resistance scan line includes a column scan trunk line and a second lead wire, the column scan trunk line being connected to the second lead electrode of each of the sensitive gates through each of the second lead wires; wherein, in step S1, the method further includes:

[0020] Based on the effective resistance value R1 of the row scanning trunk line and the effective resistance value R2 of the column scanning trunk line corresponding to each of the sensitive gates, the relationship between the resistance value R3 of the first lead wire and the resistance value R4 of the second lead wire corresponding to each of the sensitive gates is determined, so that the total additional resistance R of each of the sensitive gates is equal, R = R1 + R2 + R3 + R4; wherein, the resistance value R3 is adjusted by adjusting the cross-sectional area and length of the first lead wire, and the resistance value R4 is adjusted by adjusting the cross-sectional area and length of the second lead wire.

[0021] Optionally, after step S2, the method further includes:

[0022] Based on the resistance value corresponding to each of the sensitive gates, the adjustment resistance value between each of the sensitive gates and the target resistance value is obtained;

[0023] The resistance of the sensitive gate is adjusted according to the aforementioned resistance values.

[0024] Optionally, when the first strain gauge array is a metal foil strain gauge array, adjusting the resistance of the sensitive grid according to each of the adjusted resistance values ​​includes:

[0025] According to the aforementioned adjustment of resistance value, the surface of the sensitive gate is polished to make the sensitive gate thinner, thereby achieving the adjustment of resistance value.

[0026] Optionally, when the first strain gauge array is a semiconductor strain gauge array, adjusting the resistance of the sensitive gate according to each of the adjusted resistance values ​​includes:

[0027] According to the aforementioned resistance adjustment, the surface of the sensitive gate is laser-treated to alter the effective carrier concentration by causing amorphous lattice defects and / or deactivated dopant atoms formed in the laser-treated area of ​​the sensitive gate surface. This achieves the adjustment of the resistance value.

[0028] Optionally, the first strain gauge array (bold) is an integrated body fabricated from multiple strain gauges, wherein each strain gauge includes at least one of the sensing grids.

[0029] A second aspect of this invention discloses a rapid strain gauge resistance detection structure, the detection structure comprising:

[0030] The first strain gauge array includes row resistance scan lines corresponding to the number of rows of the sensitive gate array and column resistance scan lines corresponding to the number of columns of the sensitive gate array. Each row resistance scan line includes a first lead wire connected to a first lead electrode of each sensitive gate in the corresponding row. Each column resistance scan line includes a second lead wire connected to a second lead electrode of each sensitive gate in the corresponding column. The row and column resistance scan lines are insulated from each other. Each row and column resistance scan line is connected to a resistance detector. The first strain gauge array includes a substrate layer and a sensitive gate layer, and the sensitive gate layer includes a sensitive gate array composed of multiple sensitive gates arranged in an array.

[0031] The detection structure is configured to select the row resistance scan line and the column resistance scan line through the resistance detector, thereby obtaining the resistance value corresponding to each of the sensitive gates.

[0032] The beneficial effects of this invention are as follows: 1. This invention prepares row and column resistance scanning lines, connects them to a resistance detector, and then selects the row and column resistance scanning lines to obtain the resistance value corresponding to each sensitive grid. This invention selects and detects the resistance value of the sensitive grid row by row and column by column, which, compared with the prior art, eliminates the need to move the probe, greatly improving detection efficiency. 2. The selection and detection of this invention can be controlled by a machine, making it easier to achieve full automation compared with the prior art, thus effectively reducing manual labor. 3. The detection method of this invention does not require the probe to press down on the lead-out electrode for contact detection, thereby reducing the possibility of damage to the lead-out electrode contact points and improving the product qualification rate of strain gauges. 4. The preparation of row and column resistance scanning lines of this invention can be integrated into the preparation process of the strain gauge itself, avoiding the complication of the preparation process. 5. The laser cutting separation of this invention can be combined with the segmentation step of the strain gauge itself, further simplifying the detection process. 6. This invention takes into account the influence of the resistance of the row resistance scanning line and the column resistance scanning line on the detection, and then calculates and discards their resistance values, thereby improving the detection accuracy of strain gauge resistance.

[0033] In summary, this invention improves the detection efficiency of multiple sensitive gate resistance values ​​on the same substrate. Attached Figure Description

[0034] Figure 1 This is a flowchart illustrating a rapid strain gauge resistance detection method according to a specific embodiment of the present invention;

[0035] Figure 2 This is a schematic diagram of a strain gauge resistance rapid detection structure provided in a specific embodiment of the present invention. Detailed Implementation

[0036] This invention discloses a method and structure for rapid detection of strain gauge resistance. Those skilled in the art can refer to the content of this document and appropriately modify the technical details to achieve the desired implementation. It is particularly important to note that all similar substitutions and modifications are obvious to those skilled in the art and are considered to be included in this invention. The method and application of this invention have been described through preferred embodiments. Those skilled in the art can clearly modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit, and scope of this invention to implement and apply the technology of this invention.

[0037] The applicant's research revealed that, due to the high precision requirements of strain gauges, the resistance value of the sensing grid must be strictly controlled during the manufacturing process. After the sensing grid is fabricated, its resistance needs to be tested to ensure it meets the precision requirements. Existing technologies typically use probes to contact the electrodes of the sensing grid to detect the resistance. However, probe testing cannot simultaneously test multiple sensing grids. Furthermore, since strain gauge fabrication usually involves multiple strain gauges being manufactured simultaneously on the same substrate, probe testing becomes inefficient.

[0038] Furthermore, since the probe detects resistance by pressing down to make contact, it is easily damaged or the lead-out electrode is exposed. Therefore, improving the resistance detection efficiency while avoiding damage to the sensitive gate has become of paramount importance.

[0039] Therefore, embodiments of the present invention provide a method for rapid detection of strain gauge resistance, such as... Figure 1 As shown, the method includes:

[0040] Step S1: Prepare row resistance scan lines corresponding to the number of rows of the sensitive gate array and column resistance scan lines corresponding to the number of columns of the sensitive gate array on the sensitive gate array of the first strain gauge array; the row resistance scan lines include first lead wires connected to the first lead electrodes of each sensitive gate in the corresponding row, and the column resistance scan lines include second lead wires connected to the second lead electrodes of each sensitive gate in the corresponding column.

[0041] Among them, the row resistance scan lines and column resistance scan lines are insulated from each other. The first strain gauge array (bold) includes a substrate layer and a sensitive gate layer. The sensitive gate layer includes a sensitive gate array composed of multiple sensitive gates arranged in an array.

[0042] It should be noted that the row and column resistance scan lines are fabricated together during the strain gauge fabrication process, typically using methods such as photolithography and deposition. The gated resistance detection method formed by the row and column resistance scan lines allows for resistance detection of all sensitive gates on the first strain gauge array in a short time, significantly accelerating detection efficiency and improving the overall fabrication process. Furthermore, since the row and column resistance scan lines are fabricated and connected to the lead-out electrodes, there is no risk of contact damage, thus improving the quality of the final product.

[0043] In a first specific embodiment, when the first strain gauge array is a metal foil strain gauge array, step S1 includes:

[0044] Photolithography is performed on the sensitive gate layer of the first strain gauge array to obtain the sensitive gate array, row resistance scan lines, and column resistance scan lines; wherein the row resistance scan lines and column resistance scan lines are cross-connected.

[0045] Photolithography is performed at the intersection of the row resistance scan line and the column resistance scan line to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a first insulating layer is prepared at the intersection, spanning the complete scan line, and a first conductive pattern is prepared on the first insulating layer to connect the broken scan line.

[0046] It should be noted that when preparing metal foil strain gauges, the row resistance scan lines and column resistance scan lines can be prepared together with the sensing grid. This can reduce the preparation process of the row resistance scan lines and column resistance scan lines, further improve the detection efficiency, and avoid the detection process being too redundant.

[0047] In a second specific embodiment, when the first strain gauge array is a semiconductor strain gauge array, step S1 includes:

[0048] A first metal layer is fabricated on the sensitive gate layer of the first strain gauge array, and photolithography is performed on the first metal layer to obtain row resistance scan lines and column resistance scan lines; wherein, the sensitive gate array in the sensitive gate layer has been fabricated.

[0049] Photolithography is performed at the intersection of the row resistance scan line and the column resistance scan line to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a second insulating layer is prepared at the intersection, spanning the complete scan line, and a second conductive pattern is prepared on the first insulating layer to connect the broken scan line.

[0050] It should be noted that, unlike metal strain gauges, semiconductor strain gauges have poor conductivity in their sensing gate layer. Therefore, an additional first metal layer is fabricated to prepare the row and column resistance scan lines. This avoids the row and column resistance scan lines from affecting the detection due to excessive resistance, further improving detection accuracy.

[0051] In this specific embodiment, the row resistance scan line includes a row scan trunk line and a first lead wire, the row scan trunk line being connected to the first lead electrode of each of the sensitive gates through each of the first lead wires; the column resistance scan line includes a column scan trunk line and a second lead wire, the column scan trunk line being connected to the second lead electrode of each of the sensitive gates through each of the second lead wires; wherein, in step S1, the method further includes:

[0052] Based on the effective resistance value R1 of the row scanning trunk line and the effective resistance value R2 of the column scanning trunk line corresponding to each of the sensitive gates, the relationship between the resistance value R3 of the first lead wire and the resistance value R4 of the second lead wire corresponding to each of the sensitive gates is determined, so that the total additional resistance R of each of the sensitive gates is equal, R = R1 + R2 + R3 + R4; wherein, the resistance value R3 is adjusted by adjusting the cross-sectional area and length of the first lead wire, and the resistance value R4 is adjusted by adjusting the cross-sectional area and length of the second lead wire.

[0053] It should be noted that making the total additional resistance equal can reduce detection errors and improve detection accuracy.

[0054] Step S2: Connect the row resistance scan line and the column resistance scan line to the resistance detector, and control the resistance detector to select the row resistance scan line and the column resistance scan line, thereby obtaining the resistance value corresponding to each sensitive gate.

[0055] Among them, the row resistance scan line and the column resistance scan line that are simultaneously selected are the sensitive grids under test.

[0056] It should be noted that when the row and column resistance scan lines jointly select the sensitive grid as the detected sensitive grid, the resistance value of each sensitive grid can be detected one by one through this cross-selection method. Automatic and rapid detection can be achieved through electronic control selection.

[0057] In this specific embodiment, step S2 further includes:

[0058] Based on the material, effective length, and cross-sectional area of ​​the selected row and column resistance scan lines, the first additional resistance value of the row and column resistance scan lines in the corresponding resistance detection is obtained; wherein, the effective length is the length portion of the loop formed by the selected row and column resistance scan lines and the corresponding sensitive grid;

[0059] The first actual resistance value of the sensitive gate is obtained based on the first additional resistance value and the first measured resistance value; wherein the first measured resistance value is the direct measured resistance value of the resistance detector.

[0060] It should be noted that the embodiments of the present invention also take into account the influence of scan line resistance on detection. By obtaining the scan line resistance and then discarding it, the detection accuracy of the embodiments of the present invention is further improved.

[0061] In this specific embodiment, the method further includes the following after step S2:

[0062] Based on the resistance value corresponding to each sensitive gate, obtain the adjustment resistance value between each sensitive gate and the target resistance value;

[0063] Adjust the resistance of the sensitive gate according to the various adjustment values.

[0064] It should be noted that the resistance adjustment methods include, but are not limited to, connecting a compensation resistor and directly processing the sensitive gate to make the sensitive gate resistance change as expected.

[0065] Furthermore, when the first strain gauge array is a metal foil strain gauge array, the resistance of the sensitive grid is adjusted according to each adjustment resistance value, including:

[0066] To adjust the resistance value, the surface of the sensitive gate is polished to make it thinner, thereby achieving the adjustment of the resistance value.

[0067] It should be noted that this embodiment involves directly processing the sensitive gate to cause a change in its resistance. Polishing is a common method for adjusting the resistance of metal sensitive gates.

[0068] In another specific embodiment, when the first strain gauge array is a semiconductor strain gauge array, the resistance of the sensitive gate is adjusted according to each adjustment resistance value, including:

[0069] Based on the various resistance values, the surface of the sensitive gate is laser-treated to alter the effective carrier concentration by creating amorphous lattice defects and / or deactivated dopant atoms in the laser-treated area of ​​the sensitive gate surface. This process achieves the adjustment of the resistance value.

[0070] It should be noted that semiconductor strain gauges have a more delicate structure, and grinding can easily damage them, thus affecting their function. Therefore, the laser processing method proposed in this embodiment of the invention can effectively avoid this problem. On the other hand, it also avoids introducing new resistance that could lead to differences in the coefficient of thermal expansion.

[0071] In this specific embodiment, the first strain gauge array (bold) is an integrated body fabricated from multiple strain gauges, and each strain gauge includes at least one sensing grid.

[0072] Step S3: In response to the detection of the resistance value of each sensitive gate, each first lead wire and second lead wire is laser-cut to separate each sensitive gate from the row resistance scan line and the column resistance scan line.

[0073] It should be noted that separation ensures the strain gauge product is not affected by row and column resistance scan lines, and laser separation offers high precision. The laser separation step can be incorporated into the original strain gauge separation process during fabrication, thus avoiding the addition of a resistance measurement step and reducing redundancy.

[0074] Based on the above-described rapid strain gauge resistance detection method, this invention also provides a rapid strain gauge resistance detection structure, such as... Figure 2As shown, the detection structure includes:

[0075] The first strain gauge array includes row resistance scan lines 1 corresponding to the number of rows of the sensitive gate array and column resistance scan lines 2 corresponding to the number of columns of the sensitive gate array. The row resistance scan line 1 includes a first lead wire 6 connected to the first lead electrode 4 of each sensitive gate 3 in the corresponding row. The column resistance scan line 2 includes a second lead wire 7 connected to the second lead electrode 5 of each sensitive gate 3 in the corresponding column. The row resistance scan line 1 and the column resistance scan line 2 are insulated from each other. The row resistance scan line 1 and the column resistance scan line 2 are respectively connected to the resistance detector 8. The first strain gauge array includes a substrate layer and a sensitive gate layer. The sensitive gate layer includes a sensitive gate array composed of multiple sensitive gates 3 arranged in an array.

[0076] The detection structure is configured to select the row resistance scan line 1 and column resistance scan line 2 through the resistance detector 8, thereby obtaining the resistance value corresponding to each sensitive gate 3.

[0077] It is worth mentioning that, Figure 2 The resistance detector 8 is for illustrative purposes only. In actual use, each row resistance scan line 1 and column resistance scan line 2 is connected to the resistance detector 8.

[0078] Based on the embodiments of the above methods and structures, it can be inferred that:

[0079] This invention provides a method for preparing row and column resistance scan lines, connecting them to a resistance detector, and then selecting these lines to obtain the resistance value corresponding to each sensitive gate. This method detects the sensitive gate resistance value row-by-row and column-by-column, significantly improving detection efficiency compared to existing technologies by eliminating the need for probe movement.

[0080] The gating detection in the embodiments of the present invention can all be controlled by machines, which makes it easier to achieve full automation compared with the prior art, thereby effectively reducing manual labor.

[0081] The detection method corresponding to the embodiments of the present invention does not require a probe to perform pressure contact detection on the lead-out electrode, thereby reducing the occurrence of damage to the lead-out electrode contact point and improving the product qualification rate of strain gauges.

[0082] The preparation of row resistance scan lines and column resistance scan lines in this embodiment of the invention can be integrated into the preparation process of the strain gauge itself, thus avoiding the complexity of the preparation process.

[0083] The laser cutting separation method of this invention can be combined with the segmentation step of the strain gauge itself, further simplifying the detection process.

[0084] The embodiments of the present invention take into account the influence of the resistance of the row resistance scanning line and the column resistance scanning line on the detection, and then eliminate them after solving for their resistance values, thereby improving the detection accuracy of strain gauge resistance values.

[0085] In summary, the embodiments of the present invention improve the detection efficiency of multiple sensitive gate resistance values ​​on the same substrate.

[0086] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0087] The various embodiments in this specification are described in a related manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the system embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0088] The above are merely preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention are included within the scope of protection of the present invention.

Claims

1. A method for rapid detection of strain gauge resistance, characterized in that, The method is applied to a strain gauge comprising a detection structure, the detection structure including: The first strain gauge array includes row resistance scan lines corresponding to the number of rows of the sensitive gate array and column resistance scan lines corresponding to the number of columns of the sensitive gate array. Each row resistance scan line includes a first lead wire connected to a first lead electrode of each sensitive gate in the corresponding row. Each column resistance scan line includes a second lead wire connected to a second lead electrode of each sensitive gate in the corresponding column. The row and column resistance scan lines are insulated from each other. Each row and column resistance scan line is connected to a resistance detector. The first strain gauge array includes a substrate layer and a sensitive gate layer, and the sensitive gate layer includes a sensitive gate array composed of multiple sensitive gates arranged in an array. The detection structure is configured to: select the row resistance scan line and the column resistance scan line through the resistance detector, thereby obtaining the resistance value corresponding to each of the sensitive gates; The method includes: Step S1: On the sensitive gate array of the first strain gauge array, row resistance scan lines corresponding to the number of rows of the sensitive gate array and column resistance scan lines corresponding to the number of columns of the sensitive gate array are prepared; the row resistance scan lines include first lead wires connected to the first lead electrodes of each sensitive gate in the corresponding row, and the column resistance scan lines include second lead wires connected to the second lead electrodes of each sensitive gate in the corresponding column; wherein, the row resistance scan lines and the column resistance scan lines are insulated from each other, and the first strain gauge array includes a substrate layer and a sensitive gate layer, and the sensitive gate layer includes a sensitive gate array composed of a plurality of sensitive gates arranged in an array; Step S2: Connect the row resistance scan line and the column resistance scan line to the resistance detector, and control the resistance detector to select the row resistance scan line and the column resistance scan line to obtain the resistance value corresponding to each of the sensitive gates; wherein, the row resistance scan line and the column resistance scan line that are simultaneously connected and selected are the sensitive gates under test. Step S3: In response to the detection of the resistance value of each of the sensitive gates, laser cutting is performed on each of the first lead wires and the second lead wires to separate each of the sensitive gates from the row resistance scan line and the column resistance scan line.

2. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, When the first strain gauge array is a metal foil strain gauge array, step S1 includes: Photolithography is performed on the sensitive gate layer of the first strain gauge array to obtain the sensitive gate array, the row resistance scan lines, and the column resistance scan lines; wherein the row resistance scan lines and the column resistance scan lines are cross-connected. Photolithography is performed at the intersection of the row resistance scan line and the column resistance scan line to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a first insulating layer is prepared at the intersection, spanning the complete scan line, and a first conductive pattern is prepared on the first insulating layer to connect the broken scan line.

3. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, When the first strain gauge array is a semiconductor strain gauge array, step S1 includes: A first metal layer is fabricated on the sensitive gate layer of the first strain gauge array, and photolithography is performed on the first metal layer to obtain the row resistance scan lines and the column resistance scan lines; wherein, the sensitive gate array in the sensitive gate layer has been fabricated. The intersection of the row resistance scan line and the column resistance scan line is photolithographically etched to break one of the scan lines, thereby insulating and separating the row resistance scan line and the column resistance scan line; a second insulating layer is prepared at the intersection, spanning the complete scan line, and a second conductive pattern is prepared on the second insulating layer to connect the broken scan line.

4. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, Step S2 further includes: Based on the material, effective length, and cross-sectional area of ​​the selected row and column resistance scan lines, a first additional resistance value for the row and column resistance scan lines in the corresponding resistance detection is obtained; wherein, the effective length is the length portion of the loop formed by the selected row and column resistance scan lines and the corresponding sensitive gate; Based on the first additional resistance value and the first measured resistance value, the first actual resistance value of the sensitive gate is obtained; wherein, the first measured resistance value is the direct measured resistance value of the resistance detector.

5. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, The row resistance scan line includes a row scan trunk line and a first lead wire, wherein the row scan trunk line is connected to the first lead electrode of each of the sensitive gates through each of the first lead wires; the column resistance scan line includes a column scan trunk line and a second lead wire, wherein the column scan trunk line is connected to the second lead electrode of each of the sensitive gates through each of the second lead wires; wherein, in step S1, the method further includes: Based on the effective resistance value R1 of the row scanning trunk line and the effective resistance value R2 of the column scanning trunk line corresponding to each of the sensitive gates, the relationship between the resistance value R3 of the first lead wire and the resistance value R4 of the second lead wire corresponding to each of the sensitive gates is determined, so that the total additional resistance R of each of the sensitive gates is equal, R = R1 + R2 + R3 + R4; wherein, the resistance value R3 is adjusted by adjusting the cross-sectional area and length of the first lead wire, and the resistance value R4 is adjusted by adjusting the cross-sectional area and length of the second lead wire.

6. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, The method further includes the following after step S2: Based on the resistance value corresponding to each of the sensitive gates, the adjustment resistance value between each of the sensitive gates and the target resistance value is obtained; The resistance of the sensitive gate is adjusted according to the aforementioned resistance values.

7. The rapid strain gauge resistance detection method according to claim 6, characterized in that, When the first strain gauge array is a metal foil strain gauge array, the step of adjusting the resistance of the sensitive grid according to each of the adjusted resistance values ​​includes: According to the aforementioned adjustment of resistance value, the surface of the sensitive gate is polished to make the sensitive gate thinner, thereby achieving the adjustment of resistance value.

8. The method for rapid detection of strain gauge resistance according to claim 6, characterized in that, When the first strain gauge array is a semiconductor strain gauge array, the step of adjusting the resistance of the sensitive gate according to each of the adjusted resistance values ​​includes: According to the aforementioned resistance adjustment, the surface of the sensitive gate is laser-treated to alter the effective carrier concentration by causing amorphous lattice defects and / or deactivated dopant atoms formed in the laser-treated area of ​​the sensitive gate surface. This achieves the adjustment of the resistance value.

9. The method for rapid detection of strain gauge resistance according to claim 1, characterized in that, The first strain gauge array (bold) is an integrated structure fabricated from multiple strain gauges, each strain gauge including at least one of the aforementioned sensing grids.

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