Ion beam measurement method, system, and computer device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU LEUVEN INSTR CO LTD
- Filing Date
- 2024-05-24
- Publication Date
- 2026-06-26
Smart Images
Figure CN121008304B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the semiconductor field, and in particular to an ion beam measurement method, system, and computer device. Background Technology
[0002] With the continuous development of semiconductor devices, filters and gratings, ion beam etching (IBE) technology has become increasingly popular and is developing rapidly due to its strong directionality and ability to perform anisotropic etching on small-sized patterns.
[0003] In ion beam etching technology, it is necessary to measure relevant parameters of the ion beam, such as the beam spot center position, beam spot radius, and beam energy distribution shift. Related technologies primarily use Faraday cups and Faraday probes to measure these parameters. However, Faraday cups and Faraday probes require significant time and effort for maintenance and cleaning after use, making the ion beam measurement process quite cumbersome. Summary of the Invention
[0004] In view of this, the purpose of this application is to provide an ion beam measurement method, system, and computer equipment to improve the convenience of detecting ion beam-related parameters, make operation easier, and reduce detection costs. The specific solution is as follows:
[0005] On one hand, this application provides an ion beam measurement method applied to an ion beam measurement system. The ion beam measurement system includes a first current detection module, a second current detection module, and a main body component disposed opposite to an ion source. The main body component includes a support component, a first rotation mechanism and a second rotation mechanism located on the support component, and a first probe and a second probe. The method includes:
[0006] When the ion source emits an ion beam along the target direction, the first probe is controlled by the first rotating mechanism to rotate in the target plane at a first angular velocity, and the second probe is controlled by the second rotating mechanism to rotate in the target plane at a second angular velocity; the target plane is perpendicular to the target direction.
[0007] The first current detection module is used to collect the first current generated by the ion beam detected by the first probe to obtain the first current change curve. The second current detection module is used to collect the second current generated by the ion beam detected by the second probe to obtain the second current change curve.
[0008] A coordinate system is established with the rotation center of the second probe as the origin. The center position and radius of the ion beam spot are determined based on the first angular velocity, the second angular velocity, the first current change curve, the second current change curve, the first distance, and the second distance. The first distance is the distance between the first rotating mechanism and the second rotating mechanism in the y-axis direction, and the second distance is the distance between the first rotating mechanism and the second rotating mechanism in the x-axis direction.
[0009] In another aspect, embodiments of this application also provide an ion beam measurement system, the ion beam measurement system comprising:
[0010] A main body component disposed opposite to an ion source; the ion source is used to emit an ion beam along a target direction, and the main body component includes a support component, a first rotating mechanism, a second rotating mechanism, a first probe, and a second probe;
[0011] The first rotating mechanism is fixed to the first end of the support component, the second rotating mechanism is fixed to the second end of the support component, the first probe is connected to the first rotating mechanism, and the first rotating mechanism is used to control the first probe to rotate in the target plane, the target plane being perpendicular to the target direction;
[0012] The second probe is connected to the second rotating mechanism, which controls the second probe to rotate within the target plane. The area swept by the first probe overlaps with the area swept by the second probe, and the ion beam is located within the overlapping area.
[0013] A first current detection module and a second current detection module; the first current detection module is connected to the first probe via a first wire, the first probe is used to detect the ion beam and generate a first current, and the first current detection module is used to collect the first current to obtain a first current change curve; the second current detection module is connected to the second probe via a second wire, the second probe is used to detect the ion beam and generate a second current, and the second current detection module is used to collect the second current to obtain a second current change curve.
[0014] In another aspect, embodiments of this application provide a computer device, the computer device including a processor and a memory:
[0015] The memory is used to store program code and transmit the program code to the processor;
[0016] The processor is used to execute the methods described above according to the instructions in the program code.
[0017] In another aspect, embodiments of this application provide a computer-readable storage medium for storing a computer program for performing the methods described above.
[0018] This application provides an ion beam measurement method, system, and computer device. The method is applied to an ion beam measurement system, which includes a first current detection module, a second current detection module, and a main body component disposed opposite to an ion source. The main body component includes a support component, a first rotation mechanism and a second rotation mechanism located on the support component, and a first probe and a second probe. When the ion source emits an ion beam along a target direction, the first rotation mechanism controls the first probe to rotate in the target plane at a first angular velocity, and the second rotation mechanism controls the second probe to rotate in the target plane at a second angular velocity. Thus, during the rotation of the first and second probes, the ion beam can be incident on the surfaces of the two probes, wherein the target plane is perpendicular to the target direction. The first current generated by the ion beam detected by the first probe is collected using the first current detection module to obtain the first current change curve. The second current generated by the ion beam detected by the second probe is collected using the second current detection module to obtain the second current change curve. The first current change curve and the second current change curve can respectively represent the changing trend of the current generated by the ion beam detected by the first probe and the second probe. A coordinate system is established with the rotation center of the second probe as the origin. The center position and radius of the ion beam spot are determined based on the first angular velocity, the second angular velocity, the first current change curve, the second current change curve, the first distance, and the second distance. The first distance is the distance between the first rotating mechanism and the second rotating mechanism in the y-axis direction, and the second distance is the distance between the first rotating mechanism and the second rotating mechanism in the x-axis direction.
[0019] Therefore, by using two probes and two current detection modules, the ion beam can be collected and converted into current. The center position and size of the ion beam spot can be calculated in a coordinate system according to the functional relationship, thereby improving the convenience of detecting ion beam related parameters, making the operation more convenient, and reducing the detection cost. Attached Figure Description
[0020] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0021] Figure 1 A schematic diagram of an ion beam measurement system provided in an embodiment of this application is shown;
[0022] Figure 2 A schematic diagram of yet another ion beam measurement system provided in an embodiment of this application is shown;
[0023] Figure 3 A schematic diagram of a probe rotation provided in an embodiment of this application is shown;
[0024] Figure 4 A schematic diagram of another probe rotation provided in an embodiment of this application is shown;
[0025] Figure 5 A schematic flowchart of an ion beam measurement method provided in an embodiment of this application is shown;
[0026] Figure 6 A schematic diagram of a current change curve provided in an embodiment of this application is shown;
[0027] Figure 7 A schematic diagram of a coordinate system provided in an embodiment of this application is shown;
[0028] Figure 8 A schematic diagram of a coordinate system provided in an embodiment of this application is shown;
[0029] Figure 9 A schematic diagram of another current change curve provided in an embodiment of this application is shown;
[0030] Figure 10 A schematic diagram of another current change curve provided in an embodiment of this application is shown;
[0031] Figure 11 A schematic diagram of another probe rotation provided in an embodiment of this application is shown;
[0032] Figure 12 This is a structural diagram of a computer device provided in an embodiment of this application. Detailed Implementation
[0033] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.
[0034] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0035] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.
[0036] For ease of understanding, the following detailed description, in conjunction with the accompanying drawings, provides an ion beam measurement method, system, and computer equipment provided in the embodiments of this application.
[0037] In this embodiment of the application, an ion beam measurement system can be used to measure the ion beam emitted by an ion source located in a process chamber. The ion beam measurement system may include a main component 1, with reference to... Figure 1 The diagram shown is a schematic of an ion beam measurement system provided in an embodiment of this application.
[0038] The cavity 7 contains an ion source 5, a workpiece 4, a stage 3, and a main component 1. The cavity 7 can be a vacuum environment. The main component 1 is located directly above the workpiece 4. The stage 3 supports the workpiece 4, and the workpiece 4 can move synchronously with the stage 3. During the etching process, the ion source 5 can emit an ion beam 6 along the target direction. The ion beam 6 can bombard the workpiece 4, thereby etching the workpiece 4.
[0039] Understandably, during the process, the neutralizer should be turned on to provide an electronically assisted ion source for ignition during the ignition operation, while the neutralizer needs to be turned off when detecting ion beam-related parameters to ensure that the probe in the main component 1 can sense the current.
[0040] Before any processing is performed, such as before the process begins, relevant parameters of the ion beam can be measured, including the center position and radius of the ion beam spot. At this time, a moving component (not shown in the figure) can be used to move the workpiece 4, stage 3, and main body 1 downwards, so that the main body 1 is located where the workpiece 4 and stage 3 were originally, aligning it directly with the outlet of the ion source 5. This ensures that the ion beam 6 emitted from the ion source 5 falls within the detection range of the main body 1. The ion beam can be a focused ion beam, a collimated ion beam, or a divergent ion beam.
[0041] When the main component 1 detects the ion beam 6, the current sensed by the main component 1 is transmitted to the current measurement module 2 through the wire. The current value measured by the current measurement module 2 is further transmitted to the data processing platform 8, where corresponding calculations are performed to obtain the relevant parameters of the required ion beam.
[0042] Specifically, the main component 1 can be positioned opposite to the ion source 5, which emits an ion beam along a target direction, the direction in which the outlet of the ion source 5 points. (Reference) Figure 2 As shown, the main component 1 may include a support component 103, a first rotating mechanism 102a, a second rotating mechanism 102b, a first probe 101a, and a second probe 101b.
[0043] The support component 103 is used to support the first rotating mechanism 102a and the second rotating structure. The support component 103 can be a rod-shaped structure or a panel-shaped structure. The support component 103 can also be any shape, such as a polygon, a circle or an irregular shape. The thickness of the support component 103 can be 0.5-30mm.
[0044] The first rotating mechanism 102a can be fixed to the first end of the support member 103, and the second rotating mechanism 102b can be fixed to the second end of the support member 103. The first end and the second end are different positional regions and can be set at any position on the support member 103 without specific limitation. For example, when the support member 103 is a rod-shaped structure, the first end and the second end are the two ends of the rod-shaped structure, respectively. If the support member 103 is a panel-shaped structure, such as... Figure 2 As shown, the first and second ends can be any positions on the panel.
[0045] The support component 103 can be made of a conductive material. Since the bombardment of the ion beam will cause a large amount of loss to the support component 103, a conductive material with high atomic density and good conductivity can be selected, such as graphite.
[0046] The first probe 101a can be connected to the first rotating mechanism 102a, so that the first rotating mechanism 102a can control the first probe 101a to rotate in the target plane. The target plane is parallel to the surface of the support member 103 facing the ion source, that is, the target plane is perpendicular to the target direction. The second probe 101b can be connected to the second rotating mechanism 102b, and the second rotating mechanism 102b can control the second probe 101b to also rotate in the target plane.
[0047] The first probe 101a and the second probe 101b can also be made of conductive materials to reduce the wear and tear on the probes caused by ion beam bombardment. Conductive materials with high atomic density and good conductivity, such as graphite, can be selected. The length of the first probe 101a or the second probe 101b can be 40-850 cm, and the width can be 1-10 mm. It is important to note that the length of the probe cannot exceed the distance L between the first rotating mechanism 102a and the second rotating mechanism 102b. The rotational speed of the first rotating mechanism 102a or the second rotating mechanism 102b can be 1-200 rpm.
[0048] Since the first probe 101a can rotate within the target plane, it can receive the ion beam at some locations and not at others. This means the ion beam can be located within the area scanned by the first probe 101a, ensuring that it can detect the ion beam at certain locations. When the ion beam is incident on the surface of the first probe 101a, it can detect the ion beam and generate a first current based on it. The surface of either the first probe 101a or the second probe 101b facing the ion source coincides with the surface of the original workpiece 4 at that location.
[0049] For the second probe 101b, the ion beam is also located in the area swept by the second probe 101b in the target plane, so that the second probe 101b can also detect the ion beam. Similarly, when the ion beam is incident on the surface of the second probe 101b, the second probe 101b can detect the ion beam and generate a second current based on the ion beam.
[0050] In this way, the ion beam is located in the area scanned by both the first probe 101a and the second probe 101b, and the position of the beam spot formed by the ion beam on the target plane generally does not change. Therefore, within the target plane, the area scanned by the first probe 101a and the area scanned by the second probe 101b have an overlapping area, and the ion beam is located in this overlapping area, thereby ensuring that both the first probe 101a and the second probe 101b can detect the current generated by the ion beam.
[0051] It is understandable that the first probe 101a and the second probe 101b should not interfere with each other during rotation. That is, the second probe 101b should not hinder the rotation of the first probe 101a, and the first probe 101a should not hinder the rotation of the second probe 101b. Therefore, the rotation start time of the first probe 101a and the rotation start time of the second probe 101b can be set to be different. For example, the first probe 101a can start rotating after the second probe 101b has finished rotating.
[0052] refer to Figure 3 The diagram shown is a schematic of probe rotation according to an embodiment of this application. The first probe 101a moves along path 1* with the first rotating mechanism 102a as the center, and the second probe 101b moves along path 2* with the second rotating mechanism 102b as the center. Finally, the first probe 101a and the second probe 101b rotate from the position indicated by the dotted line to... Figure 3The locations shown in the figure are as follows. The areas scanned by the first probe 101a and the second probe 101b overlap, and the overlapping area is indicated by shading in the figure. During the measurement process, the main body component 1 needs to be moved by a moving component to ensure that the beam spot 601 of the ion beam falls completely within the overlapping area. Only in this way can subsequent measurement operations be carried out smoothly. This requires that the lengths of the two probes and the positions of the two rotating mechanisms be selected in conjunction with the ion beam 6.
[0053] refer to Figure 2 As shown, the support component 103 has a panel-like structure, the first rotating mechanism 102a is located at the upper left corner of the support component 103, the second rotating mechanism 102b is located at the lower right corner of the support component 103, and the first probe 101a and the second probe 101b are both rod-like structures.
[0054] The ion beam measurement system may also include a current detection module 2, for reference. Figure 1 As shown, the main component 1 can be connected to the current detection module 2 via wires. This module measures the current value induced by the probe as it scans the beam spot formed by the ion beam. The current detection module 2 then transmits the current to the data processing platform 8. The current detection module 2 is a component capable of current detection, such as an ammeter. The current detection module can include a first current detection module and a second current detection module.
[0055] The first current detection module can be connected to the first probe 101a via the first wire. The first probe 101a is used to detect the ion beam and generate the first current. The first current detection module can collect the first current and obtain the first current change curve. The first current change curve can represent the change curve of the first current over time. The horizontal axis can be time, and the vertical axis can be the first current. That is, the magnitude change of the first current collected by the first probe 101a during the rotation of the first probe 101a.
[0056] The second current detection module can be connected to the second probe 101b via the second wire. The second probe 101b is used to detect the ion beam and generate a second current. The second current detection module is used to collect the second current and obtain the second current change curve. The second current change curve can represent the change curve of the second current over time. The vertical axis can be the second current and the horizontal axis can be time.
[0057] It is understandable that if one of the two probes starts rotating only after the other has completed its rotation process, the current acquisition processes of the two probes will not affect each other. Therefore, the same current detection module can be used for current acquisition; that is, the first current detection module and the second current detection module can be the same module. (Reference) Figure 2In the first current detection module 2b, the first probe 101a is connected to the first current detection module 2b via a wire 104, and the second probe 101b is also connected to the first current detection module 2b via a wire. The first current detection module 2b contains a first ammeter 201b.
[0058] In one possible implementation, the ion beam measurement system may also include a third current detection module and a third wire, with the support component 103 connected to the third current detection module 2a via the third wire 105.
[0059] refer to Figure 2 As shown, the third current detection module 2a can be connected to the third wire 105. When the ion beam directly bombards the support component 103, a current can be generated in the support component 103, thereby the third current detection module 2a can collect the current generated by the support component 103 when detecting the ion beam. The third current detection module 2a may include a second ammeter 201a and a switch connected to the second ammeter 201a. When it is necessary to perform full-area beam spot current detection, the switch can be closed; when it is not necessary to perform full-area beam spot current detection, the switch can be opened, so that the support component 103 is only in a grounded state.
[0060] Furthermore, the number of probes can be more than two, and the number of rotating structures can also be multiple, with the number of rotating mechanisms and probes corresponding one-to-one.
[0061] In one possible implementation, when the support member 103 has a panel-like structure and four corners, the first end and the second end can be diagonally opposite each other, as shown in the reference. Figure 2 As shown. Of course, the first end and the second end can also be located on the same side of the support member 103, see reference. Figure 4 As shown, the first end and the second end are both located at the two corners on the right side of the support member 103. There is a certain space between the first rotating mechanism 102a and the edge of the support member 103 so that the second probe 101b can be located in the space after rotation, thus avoiding collision between the two probes.
[0062] In this way, the first rotating mechanism 102a and the second rotating mechanism 102b can be located diagonally opposite each other or on the same side of the support component 103, thereby increasing the diversity of the positions of the first probe 101a and the second probe 101b on the support component 103 and realizing multiple combination structures of the ion beam measurement system.
[0063] This application also provides an ion beam measurement method, see reference. Figure 5 The diagram shown is a flowchart of an ion beam measurement method provided in an embodiment of this application. The method may include the following steps.
[0064] S101, when the ion source emits an ion beam along the target direction, the first probe is controlled by the first rotating mechanism to rotate in the target plane at a first angular velocity, and the second probe is controlled by the second rotating mechanism to rotate in the target plane at a second angular velocity.
[0065] In this embodiment of the application, the ion beam measurement system may include a first current detection module, a second current detection module, and a main body component disposed opposite to the ion source. The main body component may include a support component 103, a first rotation mechanism 102a and a second rotation mechanism 102b located on the support component 103, and a first probe 101a and a second probe 101b.
[0066] Specifically, the ion source can be controlled to emit an ion beam along the target direction. During the emission of the ion beam, the first rotating mechanism 102a can control the first probe 101a to rotate in the target plane, and its rotational angular velocity can be denoted as the first angular velocity ω1. In addition, the second probe 101b can also be controlled to rotate in the target plane, and its rotational angular velocity can be denoted as the second angular velocity ω2. The first angular velocity or the second angular velocity can be a changing angular velocity or a constant angular velocity.
[0067] The starting time of the first probe 101a's rotation can be staggered with the starting time of the second probe 101b's rotation. Specifically, the second probe 101b can be controlled to start rotating only after the first probe 101a has passed through the overlapping area of the two probes, preventing them from colliding during rotation. For example, the first probe 101a can be controlled to rotate first, and the second probe 101b can be controlled to rotate only after the first probe 101a has finished rotating.
[0068] S102, the first current generated by the ion beam detected by the first probe is collected using the first current detection module to obtain the first current change curve, and the second current generated by the ion beam detected by the second probe is collected using the second current detection module to obtain the second current change curve.
[0069] In this embodiment, when the first probe 101a passes through the area where the ion beam is located in the target plane, the ion beam can bombard the surface of the first probe 101a. The first probe 101a can detect the ion beam and generate a first current. Thus, during the entire rotation process of the first probe 101a, the first current can change from small to large and then back to small. The change of the first current can be collected by the first current detection module and transmitted to the data processing platform 8 to generate a first current change curve. The first current change curve, with time as the horizontal axis, can reflect the change process of the first current.
[0070] Similarly, the change in the second current can be collected using a second current detection module to obtain a second current change curve. This curve, with time as the horizontal axis, illustrates the process of the second current change. (Reference) Figure 6 As shown in the figure, (a) is the first current change curve and (b) is the second current change curve.
[0071] S103. Establish a coordinate system with the rotation center of the second probe as the origin. Determine the center position and radius of the ion beam spot based on the first angular velocity, the second angular velocity, the first current change curve, the second current change curve, the first distance, and the second distance.
[0072] In this embodiment, a coordinate system can be established with the rotation center of the second probe 101b as the origin, i.e., with the center of the second rotating mechanism 102b as the origin. The direction where the second probe 101b is located can be used as the x-axis, and the direction perpendicular to the second probe 101b can be used as the y-axis. (Refer to...) Figure 7 As shown. The distance between the first rotating mechanism 102a and the second rotating mechanism 102b in the y-axis direction can be denoted as the first distance a, that is, the distance in the vertical direction. The first distance a can be 0-600mm.
[0073] The distance between the first rotating mechanism 102a and the second rotating mechanism 102b along the x-axis can be denoted as the second distance b, which can be 0-600mm. The distance L between the rotation centers of the first rotating mechanism 102a and the second rotating mechanism 102b can be 40-850mm. It is understood that the origin of the coordinate system can also be determined by other factors, such as the rotation center of the first probe 101a. This explanation only uses an arbitrary coordinate system as an example.
[0074] Specifically, the first current variation curve reflects the current magnitude as the first probe 101a sweeps across the ion beam during its rotation, showing the current value at each moment. Based on the first angular velocity, the linear equation of the first probe 101a in the coordinate system can be determined. The second current variation curve shows the current value at each moment, and based on the second angular velocity, the linear equation of the second probe 101b can be determined.
[0075] Based on the linear equations of the two probes and the two current change curves, mathematical calculations can be performed to determine the center position (x0, y0) and radius r of the ion beam spot.
[0076] In this way, by using two probes and two current detection modules, the ion beam can be collected and converted into current. The center position of the ion beam spot and the size of the spot can be calculated in the coordinate system according to the functional relationship, thereby improving the convenience of detecting ion beam related parameters, making the operation more convenient, and reducing the detection cost.
[0077] In one possible implementation, the first current change curve may include a first start time when the first current is zero and a first end time when the first current is zero. That is, the first start time and the first end time are the two times in the first current change curve where the vertical axis value is 0.
[0078] The second current variation curve can include a second start time when the second current is zero and a second end time when the second current is zero. The second start time and the second end time are the two times in the second current variation curve where the vertical axis value is 0. Figure 6 In the above, the first start time is t1, the first end time is t2, the second start time is t3, and the second end time is t4.
[0079] Specifically, S103 can be defined as establishing a coordinate system with the rotation center of the second probe as the origin, and determining the center position and beam radius of the ion beam spot based on the first angular velocity, the second angular velocity, the first start time, the first end time, the second start time, the second end time, the first distance, and the second distance.
[0080] Let the linear equation of the second probe 101b be: y = -tan(ω²·t)x. Then, at the second starting time t3 and the second ending time t4, the linear equation of the second probe 101b is tangent to the beam spot formed by the ion beam. Therefore, the linear equations of the second probe 101b at the tangent points are as follows:
[0081] y = -tan(ω²·t³)x
[0082] y = -tan(ω²·t⁴)x
[0083] The linear equation of the first probe 101a can be set as: y=-tan(ω1·t)x+m. Since the coordinates of the rotation center of the first probe 101a are (-b, a), the linear equation of the first probe 101a always passes through this point, so we get a=-tan(ω1·t)·(-b)+m, and m=-[tan(ω1·t)ba], and the linear equation of the first probe 101a is y=-tan(ω1·t)x-[tan(ω1·t)ba].
[0084] At the first start time t1 and the first end time t2, the linear equation of the first probe 101a is tangent to the beam spot formed by the ion beam. Therefore, the linear equations of the first probe 101a at the tangent points are as follows:
[0085] y=-tan(ω1·t1)x-[tan(ω1·t1)ba]
[0086] y=-tan(ω1·t2)x-[tan(ω1·t2)ba]
[0087] Since the distances between each tangent point and the center of the beam spot (x0, y0) are all equal and equal to the beam spot radius r, the following four formulas can be obtained:
[0088]
[0089]
[0090]
[0091]
[0092] By choosing any three of the four formulas, the position of the beam spot center (x0, y0) and the beam spot radius r can be calculated by solving the equations.
[0093] In one possible implementation, the relevant parameters of the ion beam may also include the beam spot eccentricity, which is the location of the point in the curve where the ion beam has the highest energy. The energy distribution of the ion beam theoretically follows a Gaussian distribution, that is, the closer to the center of the beam spot, the higher the ion density and the greater the beam energy, with the highest energy at the center of the beam spot.
[0094] However, in actual production, various processing tolerances can cause the highest energy point of the beam spot to shift, meaning it may not be at the center of the beam spot. This causes the energy distribution to change from a Gaussian distribution to a Maxwell-like distribution. Therefore, it is necessary to determine the location of the beam spot eccentricity point, referring to... Figure 8 As shown, the position of the point with the highest energy (i.e., the off-center point) is shifted from the center position (x0, y0).
[0095] Specifically, the first intermediate moment in the first current variation curve can be determined; this first intermediate moment is the moment when the first current reaches its maximum value. Similarly, the second intermediate moment in the second current variation curve can be determined; this second intermediate moment is the moment when the second current reaches its maximum value. (Refer to...) Figure 9As shown in the figure, in (a), the first intermediate time is denoted as t*, and in (b), the second intermediate time is denoted as t**. The dashed line in the figure represents the time corresponding to the point with the highest ideal energy, that is, the time corresponding to Imax in the ideal.
[0096] Specifically, the beam spot eccentricity can be determined based on the coordinates of the beam spot center, the beam spot radius, the first intermediate time, and the second intermediate time. The position (x1, y1) of the high-energy eccentricity in the coordinate system can be calculated using the following formula:
[0097] y1=-tan(ω2·t**)x1
[0098] y1=-tan(ω1·t*)x1-[tan(ω1·t*)ba]
[0099] By calculating the two formulas above, x1 and y1 can be obtained, thus determining the position of the high-energy eccentric point. Alternatively, the position of the eccentric point can be compared with the position of the beam spot center to determine the deviation of the eccentric point relative to the beam spot center. By determining the position of the eccentric point, the location of the highest energy within the beam spot can be identified, ensuring that the area to be etched on the workpiece is positioned at this energy level, thereby improving the etching effect.
[0100] It is understandable that when the high-energy eccentricity point is located on line AB as shown in the figure, i.e., when the two probes are on the same straight line, the coordinates of the high-energy eccentricity point cannot be determined. Therefore, in the implementation of this application, efforts should be made to avoid the high-energy eccentricity point falling on line AB, that is, to avoid it falling on the straight line where the rotation center of the first probe 101a and the rotation center of the second probe 101b are located.
[0101] In one possible implementation, when the ion beam is a focused ion beam, the focal length of the focused ion beam can also be determined, that is, the focal point position of the ion beam can be determined. In this case, it can be measured with only one probe, either the first probe 101a or the second probe 101b. Here, the first probe 101a will be used as an example for explanation.
[0102] Specifically, the first parameter in the first current variation curve can be determined. This first parameter can be the full width at half maximum (FWHM) of the current Gaussian curve, or it can be the bottom peak width, as referenced. Figure 10 As shown, the solid line represents the first current change curve with FWHM, and the dashed line represents another first current change curve with FWHM. Multiple first parameters can be measured; that is, when the distance between the first probe 101a and the ion source is different, the first parameters in the first current change curve corresponding to each distance can be obtained.
[0103] Specifically, the position of the first probe 101a in the target direction can be changed. Each time the position is changed, a corresponding first current change curve is obtained. A second parameter is determined from each first current change curve. The second parameter and the first parameter have the same parameter type. If the first parameter is half the peak width, then the second parameter is also half the peak width. If the first parameter is a bottom peak width, then the second parameter is also a bottom peak width.
[0104] The minimum half-width at half-maximum (HWHM) or minimum bottom-width at half-maximum (BWHM) can be determined from the first parameter and multiple second parameters as the target parameter. A smaller HWHM or BWHM means a smaller beam spot size. If a certain HWHM or BWHM is the smallest, it means that the first probe 101a is located at the focal position. At this time, the distance between the ion source and the first probe is the focal length of the focused ion beam. The first current change curve where the target parameter is located can be determined. The position of the first probe 101a corresponding to the first current change curve is the focal position of the focused ion beam, and the distance between the first probe 101a and the ion source is the focal length.
[0105] In this way, by accurately determining the focal point of the focused ion beam, it can be ensured that the focal point falls accurately on the surface of the workpiece, minimizing the size of the beam spot on the workpiece surface. This allows for more precise etching of the workpiece, achieving high-resolution etching and thus improving processing accuracy.
[0106] In one possible implementation, the relevant parameters of the ion beam may also include the beam current value, which can be determined by the system and measured using the support component 103.
[0107] Specifically, the ion source can be controlled to emit an ion beam toward the support member 103. The size of the support member 103 can be larger than the beam spot size of the ion source, and the beam spot of the ion beam is located at a suitable position on the support member 103 so that the beam spot can fall completely on the support member 103. The support member 103 can be, for example, a backplate. The support member 103 can detect the ion beam and generate current.
[0108] Specifically, the third current detection module can be used to collect the current to obtain the beam current value of the ion beam. The third current detection module can be an ammeter, etc. The third current detection module can also include a switch. When it is necessary to measure the beam current value, the switch can be closed; otherwise, the switch can be opened.
[0109] In one possible implementation, the relevant parameters of the ion beam may also include the beam current intensity. The beam current intensity can be determined based on the beam current value and the beam spot radius. The beam spot area can be determined based on the beam spot radius. The beam current intensity can be obtained by dividing the beam current value by the area.
[0110] By measuring the beam current value and beam intensity, the degree of etching, such as the etching thickness, can be determined when using ion beam etching, thus enabling precise adaptive adjustments to the etching process.
[0111] In one possible implementation, when the first probe 101a and the second probe 101b are located on the same side of the support member 103, reference Figure 11 As shown, the first probe 101a follows trajectory 1 * After completing the scanning operation, the second probe 101b moves along trajectory 2. * Scanning operation complete.
[0112] Let the linear equation of the second probe 101b be: y = -tan(ω²·t)x. Then, at the second starting time t3 and the second ending time t4, the linear equation of the second probe 101b is tangent to the beam spot formed by the ion beam. Therefore, the linear equations of the second probe 101b at the tangent points are as follows:
[0113] y = -tan(ω²·t³)x
[0114] y = -tan(ω²·t⁴)x
[0115] The linear equation of the first probe 101a can be set as: y=tan(ω1·t)x+n. Since the coordinates of the rotation center of the first probe 101a are (-b, a), the linear equation of the first probe 101a always passes through this point, so we get a=tan(ω1·t)·(-b)+n, and n=tan(ω1·t)b+a. The linear equation of the first probe 101a is y=tan(ω1·t)x+[tan(ω1·t)b+a].
[0116] At the first start time t1 and the first end time t2, the linear equation of the first probe 101a is tangent to the beam spot formed by the ion beam. Therefore, the linear equations of the first probe 101a at the tangent points are as follows:
[0117] y=tan(ω1·t1)x+[tan(ω1·t1)b+a]
[0118] y=tan(ω1·t2)x+[tan(ω1·t2)b+a]
[0119] Since the distances between each tangent point and the center of the beam spot (x0, y0) are all equal and equal to the beam spot radius r, the following four formulas can be obtained:
[0120]
[0121]
[0122]
[0123]
[0124] By choosing any three of the four formulas, the position of the beam spot center (x0, y0) and the beam spot radius r can be calculated by solving the equations.
[0125] Specifically, when calculating the high-energy eccentricity point of the beam spot, the calculation method is the same as described above, and the specific calculation formula is as follows:
[0126] y1=-tan(ω2·t**)x1
[0127] y1=tan(ω1·t*)x1+tan(ω1·t*)b+a
[0128] The location of the high-energy eccentricity point of the beam spot can be obtained by solving the two formulas.
[0129] This application utilizes two probes and two current detection modules to acquire ion beam data, which is then converted into current. The center position and size of the ion beam spot can be calculated in a coordinate system based on functional relationships, thereby improving the convenience of detecting ion beam-related parameters, making operation easier, and reducing detection costs.
[0130] In another aspect, embodiments of this application provide a computer device, with reference to Figure 12 The diagram shown is a structural diagram of a computer device provided in an embodiment of this application. The computer device includes a processor 310 and a memory 320.
[0131] The memory 320 is used to store program code and transmit the program code to the processor 310;
[0132] The processor 310 is used to execute the method provided in the above embodiments according to the instructions in the program code.
[0133] The computer device may include a terminal device or a server, and the aforementioned apparatus may be configured in the computer device.
[0134] In another aspect, embodiments of this application also provide a storage medium for storing a computer program for executing the methods provided in the above embodiments.
[0135] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by program instructions in hardware. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium can be at least one of the following media: read-only memory (ROM), RAM, magnetic disk, or optical disk, etc., and other media capable of storing program code.
[0136] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, the apparatus embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.
[0137] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.
Claims
1. An ion beam measurement method, characterized in that, An ion beam measurement system is applied, the ion beam measurement system including a first current detection module, a second current detection module, and a main body component disposed opposite to an ion source. The main body component includes a support component, a first rotation mechanism and a second rotation mechanism located on the support component, and a first probe and a second probe. The method includes: When the ion source emits an ion beam along the target direction, the first probe is controlled by the first rotating mechanism to rotate in the target plane at a first angular velocity, and the second probe is controlled by the second rotating mechanism to rotate in the target plane at a second angular velocity; the target plane is perpendicular to the target direction. The first current detection module is used to collect the first current generated by the ion beam detected by the first probe to obtain the first current change curve. The second current detection module is used to collect the second current generated by the ion beam detected by the second probe to obtain the second current change curve. A coordinate system is established with the rotation center of the second probe as the origin. The center position and radius of the ion beam spot are determined based on the first angular velocity, the second angular velocity, the first current change curve, the second current change curve, the first distance, and the second distance. The first distance is the distance between the first rotating mechanism and the second rotating mechanism in the y-axis direction, and the second distance is the distance between the first rotating mechanism and the second rotating mechanism in the x-axis direction.
2. The method according to claim 1, characterized in that, The first current change curve includes a first start time when the first current is zero and a first end time when the first current is zero; the second current change curve includes a second start time when the second current is zero and a second end time when the second current is zero. A coordinate system is established with the rotation center of the second probe as the origin. Based on the first angular velocity, the second angular velocity, the first current change curve, the second current change curve, the first distance, and the second distance, the center position and radius of the ion beam spot are determined, including: A coordinate system is established with the rotation center of the second probe as the origin. The center position of the ion beam spot and the beam spot radius are determined based on the first angular velocity, the second angular velocity, the first start time, the first end time, the second start time, the second end time, the first distance, and the second distance.
3. The method according to claim 1 or 2, characterized in that, The method further includes: The beam spot eccentricity point of the ion beam is determined based on the beam spot center position, the beam spot radius, the first intermediate time, and the second intermediate time; the first intermediate time is the moment when the first current reaches its maximum value in the first current change curve, and the second intermediate time is the moment when the second current reaches its maximum value in the second current change curve.
4. The method according to claim 1, characterized in that, When the ion beam is a focused ion beam, the method further includes: Determine the first parameter in the first current change curve, wherein the first parameter is the half-width or bottom-width of the current Gaussian curve; By controlling the distance between the ion source and the first probe, multiple second parameters are obtained, where the second parameter is the half-width or bottom-width of the current Gaussian curve. The minimum half-peak width or the minimum bottom peak width is determined from the first parameter and the plurality of second parameters and used as the target parameter; The distance between the ion source corresponding to the target parameter and the first probe is taken as the focal length of the focused ion beam.
5. The method according to claim 1, characterized in that, The method further includes: Control the ion source to emit the ion beam toward the support component; The third current detection module is used to collect the current generated by the ion beam in the support component to obtain the beam current value of the ion beam.
6. The method according to claim 5, characterized in that, The method further includes: The beam intensity of the ion beam is determined based on the beam current value and the beam spot radius.
7. An ion beam measurement system, characterized in that, For implementing the ion beam measurement method as described in any one of claims 1-6, the ion beam measurement system comprises: A main body component disposed opposite to an ion source; the ion source is used to emit an ion beam along a target direction, and the main body component includes a support component, a first rotating mechanism, a second rotating mechanism, a first probe, and a second probe; The first rotating mechanism is fixed to the first end of the support component, the second rotating mechanism is fixed to the second end of the support component, the first probe is connected to the first rotating mechanism, and the first rotating mechanism is used to control the first probe to rotate in the target plane, the target plane being perpendicular to the target direction; The second probe is connected to the second rotating mechanism, which controls the second probe to rotate within the target plane. The area swept by the first probe overlaps with the area swept by the second probe, and the ion beam is located within the overlapping area. A first current detection module and a second current detection module; the first current detection module is connected to the first probe via a first wire, the first probe is used to detect the ion beam and generate a first current, and the first current detection module is used to collect the first current to obtain a first current change curve; the second current detection module is connected to the second probe via a second wire, the second probe is used to detect the ion beam and generate a second current, and the second current detection module is used to collect the second current to obtain a second current change curve.
8. The ion beam measurement system according to claim 7, characterized in that, When the supporting component is a panel-shaped structure, the first end and the second end are diagonally opposite each other, or the first end and the second end are located on the same side of the supporting component.
9. The ion beam measurement system according to claim 7, characterized in that, The ion beam measurement system also includes a third current detection module and a third wire; The third current detection module is connected to the third wire and is used to collect the current generated by the ion beam detected by the support component.
10. A computer device, characterized in that, The computer device includes a processor and memory: The memory is used to store program code and transmit the program code to the processor; The processor is configured to execute the method described in any one of claims 1-6 according to the instructions in the program code.