Display panel, preparation method and control method thereof, light-emitting device and display device

Abstract

The invention discloses a display panel and a preparation method and control method thereof, a luminescent device and a display device.The display panel comprises an electroluminescent element and a photoluminescent layer, and the electroluminescent element comprises an anode, an electroluminescent layer and a cathode which are stacked, the photoluminescence layer is arranged on the side, facing the light-emitting face of the display panel, of the electroluminescent element, and the material of the photoluminescence layer comprises a photoluminescence material with the light transmission characteristic. In the technical scheme of the invention, the design of the photoluminescent layer can play a role in compensating brightness, and is helpful for reducing the driving voltage for driving the electroluminescent layer to emit light, thereby reducing the overall power consumption of the display panel, and being helpful for prolonging the service life of the device.

Description

Technical Field

[0001] This application relates to the field of display panel technology, and in particular to a display panel and its preparation and control methods, light-emitting devices and display apparatus. Background Technology

[0002] Lifespan and power consumption are crucial performance characteristics reflecting the quality of a display panel. As living standards improve, users have increasingly higher demands for display panel performance. Therefore, there is an urgent need to find a way to reduce display panel power consumption. Summary of the Invention

[0003] In view of the above, this application provides a display panel and its preparation and control methods, a light-emitting device, and a display apparatus.

[0004] The embodiments of this application are implemented as follows:

[0005] In a first aspect, embodiments of this application provide a display panel, including an electroluminescent element and a photoluminescent layer. The electroluminescent element includes a stacked anode, an electroluminescent layer, and a cathode. The photoluminescent layer is disposed on the side of the electroluminescent element facing the light-emitting surface of the display panel. The material of the photoluminescent layer includes a photoluminescent material with light-transmitting properties.

[0006] Secondly, embodiments of this application provide a method for manufacturing a display panel, comprising the following steps:

[0007] A prefabricated device is provided, the prefabricated device including an electroluminescent element, the electroluminescent element including a stacked anode, an electroluminescent layer and a cathode;

[0008] A photoluminescent material with light-transmitting properties is provided, and the photoluminescent material is disposed on one side of the electroluminescent element to form a photoluminescent layer, thereby obtaining a display panel.

[0009] Thirdly, embodiments of this application provide a light-emitting device, including an electroluminescent element and a photoluminescent layer. The electroluminescent element includes a stacked anode, an electroluminescent layer, and a cathode. The photoluminescent layer is disposed on the side of the anode away from the electroluminescent layer, or on the side of the cathode away from the electroluminescent layer. The material of the photoluminescent layer includes a photoluminescent material with light-transmitting properties.

[0010] Fourthly, embodiments of this application provide a display device, including a display panel as described above, or a display panel prepared by the method described above, or a light-emitting device as described above.

[0011] Fifthly, embodiments of this application provide a method for controlling a display panel, comprising the following steps:

[0012] A display panel is provided, the display panel including an electroluminescent element and a photoluminescent layer, the electroluminescent element including a stacked anode, an electroluminescent layer and a cathode, the photoluminescent layer being disposed on the side of the electroluminescent element facing the light-emitting surface of the display panel;

[0013] Obtain the reference light signal of the display panel;

[0014] The real-time light signal of the display panel is acquired, and a corresponding driving voltage is output to the electroluminescent element based on the reference light signal and the real-time light signal.

[0015] In the technical solution proposed in this application, the photoluminescent layer emits light under the illumination of the light emitted by the electroluminescent layer or external light, which can play a role in compensating for brightness. The light emitted by the photoluminescent layer and the light emitted by the electroluminescent layer are superimposed, which helps to reduce the driving voltage for driving the electroluminescent layer to emit light, thereby reducing the overall power consumption of the display panel and helping to improve the lifespan of the device. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This application provides a schematic diagram of the structure of an embodiment of a display panel;

[0018] Figure 2 yes Figure 1 Schematic diagram of the electroluminescent layer;

[0019] Figure 3 This is a schematic diagram of the driving circuit structure of a display panel according to an embodiment of this application;

[0020] Figure 4 This is a schematic diagram of the driving circuit structure of a display panel according to another embodiment of this application;

[0021] Figure 5 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of this application;

[0022] Figure 6 This is a schematic diagram of the structure of a light-emitting device provided in another embodiment of this application;

[0023] Reference numerals: Display panel 100; Light-emitting device 101; Electroluminescent element 10; Anode 1; Cathode 2; Electron transport layer 3; Electroluminescent layer 4; Hole injection layer 5; Hole transport layer 6; Photoluminescent layer 20; Polarizer 200; Thin film transistor array layer 300; Photoresistor 400; Optical signal control module 500; Drive module 600. Detailed Implementation

[0024] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0025] In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. Furthermore, in the description of this application, the term "comprising" means "including but not limited to." Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0026] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0027] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0028] In a first aspect, embodiments of this application provide a display panel 100, please refer to... Figure 1 The display panel 100 has multiple light-emitting units, each including an electroluminescent element 10 and a photoluminescent layer 20. The display panel 100 has a light-emitting surface. The electroluminescent element 10 includes a stacked anode 1, an electroluminescent layer 4, and a cathode 2. The electroluminescent element 10 has a first side facing the light-emitting surface and a second side facing away from the light-emitting surface. The photoluminescent layer 20 is disposed on the first side of the electroluminescent element 10, and the material of the photoluminescent layer 20 includes a photoluminescent material with light-transmitting properties.

[0029] In the technical solution proposed in this application, the photoluminescent layer 20 emits light under the illumination of light emitted by the electroluminescent layer 4 or external light. The light emitted by the photoluminescent layer 20 and the light emitted by the electroluminescent layer 4 are superimposed, which helps to improve the brightness of the display panel 100 and the display effect of the display panel 100, especially enhancing the visibility under strong light. In addition, while keeping the overall brightness of the display panel 100 constant, the design of the photoluminescent layer 20 can compensate for the brightness, which helps to reduce the driving voltage that drives the electroluminescent layer 4 to emit light, thereby helping to reduce the power consumption of the display panel 100 and extend its service life.

[0030] The photoluminescent layer 20 is made of a photoluminescent material, which emits light when excited by light. The photoluminescent material can be any material that emits light of any wavelength, such as a red-light-emitting material (wavelength range of 625–740 nm), a green-light-emitting material (wavelength range of 492–577 nm), or a blue-light-emitting material (wavelength range of 440–475 nm). In some embodiments, the light emitted by the photoluminescent material is the same color as the light emitted by the electroluminescent layer 4, or the wavelength ranges of the two emitted light are the same or overlap. Specifically, the absolute value of the difference between the emission peak wavelength of the photoluminescent layer and the emission peak wavelength of the electroluminescent layer can be less than or equal to 10 nm, for example, it can be 0, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or any value between any two of the above. The emission peak wavelength can be detected by using a PL photoluminescence testing system on a solution or thin film containing the photoluminescent material.

[0031] In some embodiments, the photoluminescent material includes one or more of fluorescent materials and first quantum dot luminescent materials.

[0032] The fluorescent materials may include, but are not limited to, one or more of the following: LiCO3, Al2O3, Fe2O3, Eu2O3, BaCO3, SrCO3, SiO2, Eu2O3, Y2O3, 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited-state materials, and exciton complex luminescent materials.

[0033] The first quantum dot luminescent material may include, but is not limited to, at least one of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials. The shell of the core-shell quantum dot may consist of one or more layers. The material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are each selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. The group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, and H At least one of gTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compound is selected from SnS. At least one of SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, Al At least one of NAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; wherein the group I-III-VI compound is selected from at least one of CuInS2, CuInSe2, and AgInS2.

[0034] As an example, the core-shell structured quantum dots may be selected from, but are not limited to, at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS, CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS.

[0035] It should be noted that for the aforementioned materials consisting of single-structure quantum dots, or core-shell structure quantum dots, or shell-structure quantum dots, the provided chemical formulas only indicate the elemental composition, not the content of each element. For example, CdZnSe only indicates that it is composed of three elements: Cd, Zn, and Se. If the content of each element were specified, it would correspond to Cd... x Zn 1-x Se, 0 <x<1。

[0036] The perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them.

[0037] In some embodiments, the thickness of the photoluminescent layer 20 is 10–60 nm. For example, it can be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or any value between any two of the above. Controlling the thickness of the photoluminescent layer 20 within this range helps to ensure that the light emitted by the electroluminescent layer 4 passes through sufficiently while effectively emitting light to compensate for the light emitted by the electroluminescent layer 4.

[0038] In some embodiments, the transmittance of the photoluminescent layer 20 is greater than or equal to 90%; for example, it can be 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99%, 100%, or any value between any two of the above. This improves light transmittance, allowing sufficient light emitted from the electroluminescent layer 4 to pass through and reducing light loss. The transmittance characterizes the ability of the photoluminescent layer 20 to transmit light, specifically as the percentage of luminous flux transmitted through the photoluminescent layer 20 relative to the incident luminous flux. The transmittance can be detected using a spectrometer.

[0039] The photoluminescent layer 20 may be composed of the aforementioned photoluminescent materials, or may include photoluminescent materials and other materials. In some embodiments, the material of the photoluminescent layer 20 may further include a polymer, which may be any one or more polymers that meet the following conditions: light transmittance greater than or equal to 90%, and curing temperature less than or equal to 80°C. Specifically, the polymer may include, but is not limited to, one or more of acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, alkyd resin, and polyimide. The polymer is cured to form the matrix of the photoluminescent layer 20, and the photoluminescent material is dispersed in the matrix, enabling the photoluminescent layer 20 to emit light uniformly.

[0040] In embodiments where the material of the photoluminescent layer 20 also includes polymers, in other embodiments, the mass percentage of the photoluminescent material in the photoluminescent layer 20 is 10-80%; for example, it can be 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, or any two of the above values. Controlling the content of the photoluminescent material within this range helps to improve the light compensation effect while ensuring the effective utilization of the light emitted by the electroluminescent element 10.

[0041] The electroluminescent element 10 is formed by stacking multiple film layers. Please refer to [link / reference]. Figure 2 In some embodiments, the electroluminescent element 10 includes a stacked anode 1, an electroluminescent layer 4, and a cathode 2. The side of the electroluminescent element 10 facing the anode 1 can be one of a first side and a second side, while the side facing the cathode 2 can be the other. Light emitted by the electroluminescent element 10 can be emitted from either the first side or the second side. The light emitted from the first side of the electroluminescent element 10 merges with the light emitted from the photoluminescent layer 20 after passing through it.

[0042] It is understood that the photoluminescent layer 20 may or may not be in direct contact with the electroluminescent element 10. Taking the anode 1 side as the first side as an example, the photoluminescent layer 20 may be in contact with the anode 1, or other film layers may be disposed between the two.

[0043] The anode 1 can be any anode 1 known in the art, and the anode 1 can be a transparent electrode, for example, it can be selected from, but is not limited to, metal electrodes, carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, I The composite electrode material is selected from at least one of ZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Wherein, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer. The thickness of anode 1 can be, for example, from 10nm to 100nm, such as 10nm, 20nm, 30nm, 50nm, 60nm, 80nm, 100nm, etc.

[0044] The cathode 2 can be any cathode 2 known in the art, and the cathode 2 can be a transparent electrode, for example, it can be selected from, but is not limited to, metal electrodes, carbon electrodes, doped or undoped metal oxide electrodes, and composite electrodes; wherein, the material of the metal electrode is selected from at least one of Al, Ag, Cu, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode is selected from at least one of graphite, carbon nanotubes, graphene, and carbon fibers; the material of the doped or undoped metal oxide electrode is selected from ITO, FTO, ATO, AZO, GZO, I The composite electrode material is selected from at least one of ZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, F:SnO2, In:SnO2, and Ga:SnO2; the composite electrode material is selected from at least one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS. Wherein, " / " indicates a stacked structure; for example, the composite electrode AZO / Ag / AZO represents a three-layer stacked composite structure consisting of an AZO layer, an Ag layer, and an AZO layer. The thickness of the cathode 2 can be, for example, from 15nm to 100nm, such as 15nm, 30nm, 40nm, 50nm, 60nm, 80nm, 100nm, etc.

[0045] The material of the electroluminescent layer 4 can be any luminescent material commonly used in the art, such as, but not limited to, organic luminescent materials or second quantum dot luminescent materials. The organic luminescent material can be selected from, but not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex luminescent materials.The second quantum dot luminescent material may be selected from, but is not limited to, at least one of single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials; the shell of the core-shell quantum dot may include one or more layers, and the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot may be selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds; the group II-VI compounds may be selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, and Cd At least one of the following: STe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the IV-VI compound is selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe; the III-V compound is selected from at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlN At least one of P, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compounds are selected from at least one of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs. + Ion, M is a divalent metal cation selected from Pb 2+ Sn2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following. The thickness of the electroluminescent layer 4 can be from 10nm to 60nm, such as 10nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm, etc.

[0046] The material of the electroluminescent layer 4 can also emit light of different colors, such as including but not limited to red, green, and blue light. In some embodiments, the display panel 100 includes a plurality of electroluminescent elements 10 and an electroluminescent layer 4 for the plurality of electroluminescent elements 10. Different electroluminescent layers 4 can be provided with light-emitting materials of different colors, thereby enabling the display panel 100 to have a better display effect.

[0047] In some embodiments, the electroluminescent element 10 may further include an electronic functional layer disposed between the cathode 2 and the electroluminescent layer 4. The electronic functional layer may include one or both of an electron transport layer 3 and an electron injection layer. When the electronic functional layer includes an electron transport layer 3 and an electron injection layer, the electron injection layer is located between the electron transport layer 3 and the cathode 2. The material of the electronic functional layer may be selected from commonly used electronic functional materials in the art. For example, the material of the electron transport layer 3 may be selected from, but is not limited to, at least one of metal oxides, doped metal oxides, group II-VI semiconductor materials, group III-V semiconductor materials, and group I-III-VI semiconductor materials. The metal oxide may be selected from at least one of ZnO, BaO, TiO2, and SnO2; the doped metal oxide may be selected from at least one of ZnO, TiO2, and SnO2, and the doping element may be selected from at least one of Al, Mg, Li, In, and Ga; the group II-VI semiconductor material may be selected from at least one of ZnS, ZnSe, and CdS; the group III-V semiconductor material may be selected from at least one of InP and GaP; and the group I-III-VI semiconductor material may be selected from at least one of CuInS and CuGaS. The material of the electron injection layer may be selected from, but is not limited to, at least one of cesium carbonate, cesium fluoride, cesium azide, and lithium fluoride.

[0048] In some embodiments, the electroluminescent element 10 may further include a hole-functional layer disposed between the anode 1 and the electroluminescent layer 4. The hole-functional layer may include one or both of a hole transport layer 6 and a hole injection layer 5. When the hole-functional layer includes a hole transport layer 6 and a hole injection layer 5, the hole injection layer 5 is located between the hole transport layer 6 and the anode 1. The material of the hole-functional layer may be selected from commonly used hole-functional materials in the art. For example, the material of the hole transport layer 6 may be selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), and 4,4',4”-tris(carbazole) -9-yl)triphenylamine (TCATA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), doped graphene, undoped graphene, C60, doped or undoped NiO, doped The hole transport layer 6 can be made of at least one of the following: doped or undoped MoO3, doped or undoped WO3, or doped or undoped CuO. The thickness of the hole transport layer 6 can be from 10 nm to 100 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, or 100 nm. The material of the hole injection layer 5 is selected from at least one of the following: 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzanphenanthrene, PEDOT, PEDOT:PSS, PEDOT:PSS-doped derivatives of s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinone dimethylane, copper phthalocyanine, nickel oxide (NiO), molybdenum oxide (MoO3), tungsten oxide (WO3), vanadium oxide (V2O5), molybdenum sulfide (MoS3), tungsten sulfide (WS3), and copper oxide (CuO).

[0049] It is understood that, in addition to the functional layers mentioned above, the electroluminescent element 10 may also be provided with some conventional functional layers that help improve its performance, such as electron blocking layer, electron injection layer, hole blocking layer and / or interface modification layer.

[0050] It is understood that the materials and thicknesses of each layer of the electroluminescent element 10 can be set and adjusted according to the light emission requirements of the electroluminescent element 10.

[0051] It is understandable that each film layer of the electroluminescent element 10 is a light-transmitting film layer.

[0052] Please see Figure 3 In some embodiments, the display panel 100 further includes a driving circuit structure. The driving circuit structure is used to drive the electroluminescent element 10. Specifically, the driving circuit structure includes a driving module and a light signal control module. The driving module is electrically connected to the electroluminescent element 10 and is used to provide a voltage to drive the electroluminescent element 10 to emit light. The light signal control module is electrically connected to the driving module and is used to collect light signals and control the driving voltage of the electroluminescent element 10 according to the light signals, thereby regulating the luminous intensity of the electroluminescent layer 10. The light signals include light received by the photoluminescent layer 20, such as ambient light or light emitted by the electroluminescent layer 10.

[0053] In some embodiments, the optical signal control module includes a photoresistor 400, which is disposed on the side of the electroluminescent element 10 facing away from the photoluminescent layer 20. The photoresistor 400 can be disposed between the electroluminescent element 10 and the thin-film transistor array layer 300, or on the side of the thin-film transistor array layer 300 facing away from the electroluminescent element 10. The photoresistor 400 is electrically connected to the driving module, and its resistance changes with the optical signal to regulate the driving voltage. In some embodiments, the light emitted by the electroluminescent element 10 can be emitted from both the anode 1 and the cathode 2, and the intensity of the light emitted from both ends is substantially the same. In this way, the photoresistor 400 can accurately sense the light emitted by the display panel 100 during operation, facilitating real-time monitoring of the actual brightness of the display panel 100 and allowing for regulation of the driving voltage of the electroluminescent element 10 to make the actual brightness close to a preset reference brightness.

[0054] The photoresistors 400 can be multiple or a single one. In some embodiments, the display panel 100 includes multiple photoresistors 400, which can be configured one-to-one with multiple electroluminescent layers 4. This allows for better handling of irregular ambient light, enabling the luminous effect of each part of the display panel 100 to be adjusted according to the different intensities of ambient light received at its location, thereby improving the display effect.

[0055] Please see Figure 1In some embodiments, the display panel 100 further includes a thin-film transistor array layer 300 (TFT array layer) and a polarizer (POL). Specifically, the display panel 100 includes a stacked thin-film transistor array layer 300 and a polarizer 200. An electroluminescent element 10 and a photoluminescent layer 20 are disposed between the thin-film transistor array layer 300 and the polarizer 200, and a photoresistor 400 is disposed on the side of the thin-film transistor array layer 300 opposite to the electroluminescent element 10. The thin-film transistor array layer 300 may include one or more TFTs (TFT array layers). Figure 2 (Not shown in the image), the polarizer 200 can make the image on the display panel 100 black under normal conditions. The thin-film transistor array layer 300 and the polarizer 200 can both be fabricated using conventional structures and processes in the art, and will not be described in detail here.

[0056] In some embodiments, the display panel 100 may further include a substrate, the surface of which is used to support a photoresistor 400, a thin film transistor array layer 300, an electroluminescent element 10, a photoluminescent layer 20, a polarizer 200, etc.

[0057] In some embodiments, the photoresistor 400 is disposed in the form of a thin film on one side of the thin film transistor array layer 300.

[0058] In one embodiment, the photoresistor 400 is made of one or more of cadmium sulfide, selenium, aluminum sulfide, lead sulfide, and bismuth sulfide.

[0059] In one embodiment, the resistance of the photoresistor 400 varies from 1Ω to 10MΩ. The resistance of the photoresistor 400 can be adjusted by its material, thickness, etc.

[0060] The location on the thin-film transistor array layer 300 or the substrate where the photoresistor 400 is placed is defined as the mounting region. In actual fabrication, a pre-fabricated photoresistor 400 film can be directly applied to the mounting region, or the photoresistor 400 can be directly fabricated within the mounting region. The pre-fabricated photoresistor 400 film can be commercially available or fabricated independently. Both pre-fabricated and directly fabricated photoresistors 400 can be obtained using spraying or physical vapor deposition methods. Taking a cadmium sulfide photoresistor 400 as an example, its preparation steps are as follows: Cadmium sulfide powder is dispersed in an organic solvent and stirred using a magnetic stirrer until a fully dissolved cadmium sulfide solution is formed; a glass substrate is prepared and cleaned using solutions such as acetone and ethanol in an ultrasonic cleaner. After the substrate surface is dry, the cadmium sulfide solution is coated onto the substrate surface using spin coating, printing, or other methods. Then, a vacuum device is used to evacuate the substrate at 1 Pa for at least 15 minutes, and a hot stage is used to heat the substrate at 100°C for at least 10 minutes to remove the organic solvent, resulting in a dried cadmium sulfide film, which is the photoresistor 400. Furthermore, a conductive layer is placed on one side of the photoresistor 400 to serve as an electrode for connecting to a power source. By placing the photoresistor 400 in dark and illuminated environments and measuring its resistance, the change in its resistance under different light intensities can be observed.

[0061] In actual processing, when preparing the display panel 100, the resistance value of the photoresistor 400 with the same thickness and material prepared by the same process can be calibrated first to obtain the relationship between the resistance value of the photoresistor 400 and the light intensity, so as to better control the voltage of the electroluminescent element 10.

[0062] The light signal detected by the photoresistor 400 refers to the light intensity received by the photoresistor 400. The light signal originates from, but is not limited to, one or more of the following: light emitted by the electroluminescent layer 4, light incident from the outside, and light emitted by the photoluminescent layer 20.

[0063] Please see Figure 3 In some embodiments, the optical signal control module further includes a driving transistor T1. The electroluminescent element 10 is electrically connected between a first power supply terminal Vdd and a second power supply terminal Vss. A photoresistor 400 is electrically connected between a data signal terminal Vdata and the gate of the driving transistor T1, and the driving transistor T1 is electrically connected between the electroluminescent element 10 and the first power supply terminal Vdd. The photoresistor 400 is configured to provide different resistance values ​​according to the light it receives, thereby regulating the gate voltage of the driving transistor T1. The driving transistor T1 is configured to generate different driving currents according to the gate voltage during the light emission phase, so as to drive the electroluminescent element 10 to emit light of corresponding brightness.

[0064] Further, please refer to Figure 4 In one embodiment, the driving circuit structure further includes switching transistors T5 and T6. Driving transistor T1 is electrically connected between nodes N1 and N2, and the electroluminescent layer is electrically connected between node N3 and the second power supply terminal Vss. The source and drain of switching transistor T5 are electrically connected between the first power supply terminal Vdd and node N1, and its gate is electrically connected to the light-emitting control line EM. The source and drain of switching transistor T6 are electrically connected between nodes N2 and N3, and its gate is electrically connected to the light-emitting control line EM. The light-emitting control line EM is configured to transmit a light-emitting control signal.

[0065] The driving circuit further includes a data transistor T2, a compensation transistor T3, a first reset transistor T4, and a second reset transistor T7. One of the source and drain of the data transistor T2 is electrically connected to the data line (data) for receiving a data signal, and the other of the source and drain of the data transistor T2 is electrically connected to node N1. The source and drain of the compensation transistor T3 are electrically connected between nodes N2 and N4, and its gate is electrically connected to the scan line Scan1. The source and drain of the first reset transistor T4 are electrically connected between node N4 and the first reset line Vinit1, which is configured to transmit a first reset signal. The gate of the first reset transistor T4 is electrically connected to the scan line Scan2. The source and drain of the second reset transistor T7 are electrically connected between node N3 and the second reset line Vinit2, which is configured to transmit a second reset signal. The second reset transistor T7 is electrically connected to the scan line Scan3.

[0066] The driving circuit operates as follows: In the first stage, the first reset transistor T4 is turned on, and the first reset signal is transmitted to node N6 to reset the potential of that node. Optionally, in some embodiments, the second reset transistor T7 is also turned on in the first stage, and the second reset signal is transmitted to node N3 to reset the potential of the anode 1 of the electroluminescent element 10.

[0067] In the second stage, data transistor T2 and compensation transistor T3 are turned on, and the data signal is transmitted to node N1. Optionally, in some embodiments, the second reset transistor T7 is turned on in the second stage, and the second reset signal is transmitted to node N3 to reset the potential of the anode 1 of the electroluminescent element 10.

[0068] In the third stage, switching transistors T5 and T6 are turned on, driving transistor T1 to generate a driving current to drive the electroluminescent element 10 to emit light. At the same time, in this stage, the photoresistor 400 changes its resistance under the influence of light, thereby controlling the conduction level of the driving transistor T1, and thus controlling the driving voltage of the electroluminescent element 10.

[0069] Secondly, this application also proposes a method for manufacturing a display panel 100, the method comprising the following steps:

[0070] S10, providing a prefabricated device, the prefabricated device including an electroluminescent element 10, the electroluminescent element 10 including a stacked anode 1, an electroluminescent layer 4 and a cathode 2;

[0071] S20, a photoluminescent material with light-transmitting properties is provided, and the photoluminescent material is disposed on one side of the electroluminescent element 10 to form a photoluminescent layer 20, thereby obtaining a display panel 100.

[0072] It can be understood that the side of the anode 1 or the cathode 2 away from the electroluminescent layer 4 is the first side of the electroluminescent element 10 facing the light-emitting surface of the display panel 100, and the photoluminescent layer 20 is formed on the first side.

[0073] In step S10, the prefabricated device may include a photoresistor 400 and a thin-film transistor array layer 300 stacked together. In some embodiments, the step of providing the prefabricated device includes: providing a thin-film transistor array layer 300, disposing of a photoresistor 400 on one side of the thin-film transistor array layer 300, and then disposing of an electroluminescent element 10 on the side of the photoresistor 400 opposite to the thin-film transistor array layer 300; or, providing a photoresistor 400, disposing of a thin-film transistor array layer 300 on one side of the photoresistor 400, and then disposing of an electroluminescent element 10 on the side of the thin-film transistor array layer 300 opposite to the photoresistor 400.

[0074] The fabrication of the electroluminescent element 10 includes: sequentially fabricating multiple film layers according to the film layer stacking order of the electroluminescent element 10 to obtain the electroluminescent element 10. Specifically, the multiple film layers include, but are not limited to, an anode 1, an electroluminescent layer 4, and a cathode 2. The film layer stacking order refers to the order in which the multiple film layers are stacked. The film layer structure and stacking order of the electroluminescent element 10 can be referred to the above description and will not be repeated here.

[0075] It is understood that the preparation methods of each film layer in the electroluminescent element 10 provided in this application, including the anode 1, cathode 2, electroluminescent layer 4, conductive layer, and other film layers, can be implemented using conventional techniques in the art, such as chemical or physical methods. Chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include physical deposition and solution methods. Physical deposition methods include thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can include spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spraying, roller coating, casting, slot coating, and strip coating, etc.

[0076] In actual processing, step S20 can be implemented as follows: A film material is provided, and the film material is deposited on the light-emitting side of the electroluminescent element 10 to form a liquid film. Then, the liquid film is solidified to obtain the photoluminescent layer 20. The film material includes the photoluminescent material, which includes quantum dot luminescent materials and fluorescent materials. The quantum dot luminescent materials and fluorescent materials can be referenced from the quantum dot luminescent materials and fluorescent materials described above, and will not be repeated here.

[0077] In some embodiments, the film material further includes a solvent. Specifically, when the photoluminescent material is selected from quantum dot luminescent materials, the solvent may include, but is not limited to, one or more of C8 to C16 alkane solvents and C5 to C10 cycloalkane solvents. The C8 to C16 alkane solvents are selected from one or more of octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, 2-methyloctane, 3-ethylheptane, 2,2-dimethyloctane, and 1-cyclohexyldecane; the C5 to C10 cycloalkane solvents are selected from one or more of cyclooctane, cycloheptane, cyclohexane, and cyclopentane. When the photoluminescent material is selected from fluorescent materials, the solvent may include, but is not limited to, one or more of chlorobenzene, C8 to C16 alkane solvents, and C5 to C10 cycloalkane solvents. The C8 to C16 alkane solvents are selected from one or more of octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, 2-methyloctane, 3-ethylheptane, 2,2-dimethyloctane, and 1-cyclohexyldecane. The C5 to C10 cycloalkane solvents are selected from one or more of cyclooctane, cycloheptane, cyclohexane, and cyclopentane.

[0078] In some embodiments, the film material is composed of a photoluminescent material and a solvent. Correspondingly, in the step of curing the liquid film to obtain the photoluminescent layer 20, the curing process can employ methods such as heat treatment or vacuum drying to accelerate solvent evaporation, thereby obtaining the photoluminescent layer 20. During heat treatment, the temperature can be 70–90°C; for example, it can be 70°C, 75°C, 80°C, 85°C, 90°C, or any two of the above values. The heat treatment time can be 5–30 minutes; for example, it can be 5 minutes, 8 minutes, 10 minutes, 15 minutes, 20 minutes, 25 minutes, 30 minutes, or any two of the above values.

[0079] In some embodiments, the film material further includes a polymer, which may include, but is not limited to, one or more of acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, alkyd resin, and polyimide. The mass ratio of the photoluminescent material to the polymer is 1:(3-10); for example, it may be 1:3, 1:4, 1:5, 1:6, 1:7, 1:8, 1:9, 1:10, or any value between any two of the above.

[0080] In other embodiments, the film material is composed of a polymer, a photoluminescent material, and a solvent. Specifically, when the photoluminescent material is selected from quantum dot luminescent materials, the solvent may include, but is not limited to, one or more of C8 to C16 alkane solvents and C5 to C10 cycloalkane solvents. When the photoluminescent material is selected from fluorescent materials, the solvent may include, but is not limited to, one or more of chlorobenzene, C8 to C16 alkane solvents, and C5 to C10 cycloalkane solvents. Further, in the film material, the concentration of the photoluminescent material is 20 to 60 mg / ml; for example, it may be 20 mg / ml, 30 mg / ml, 40 mg / ml, 50 mg / ml, 60 mg / ml, and values ​​between any two of the above. Based on this, the step of curing the liquid film to obtain the photoluminescent layer 20 includes: irradiating the liquid film with ultraviolet light for 3 to 8 minutes to cure and obtain the photoluminescent layer 20. The ultraviolet light irradiation time is 3–8 minutes; for example, it can be 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, or any value between any two of the above. To further enhance the curing effect, in some embodiments, the step of curing the liquid film to obtain the photoluminescent layer 20 includes: first irradiating the liquid film with ultraviolet light, and then performing heat treatment to obtain the photoluminescent layer 20. The heat treatment temperature is 70–90°C; for example, it can be 70°C, 75°C, 80°C, 85°C, 90°C, or any value between any two of the above; the heat treatment time can be 30–100 minutes; for example, it can be 30 minutes, 40 minutes, 50 minutes, 60 minutes, 70 minutes, 80 minutes, 90 minutes, 100 minutes, or any value between any two of the above.

[0081] Thirdly, this application also relates to a light-emitting device 101, such as... Figure 5 and Figure 6 As shown, the light-emitting device 101 includes an electroluminescent element 10 and a photoluminescent layer 20. The electroluminescent element 10 includes a stacked anode 1, an electroluminescent layer 4, and a cathode 2. The photoluminescent layer 20 is disposed on the side of the anode 1 away from the electroluminescent layer 4, or on the side of the cathode 2 away from the electroluminescent layer 4. The material of the photoluminescent layer 20 includes a photoluminescent material with light-transmitting properties.

[0082] In the technical solution proposed in this application, the photoluminescent layer 20 emits light under the illumination of light emitted by the electroluminescent layer 4 or external light. The light emitted by the photoluminescent layer 20 and the light emitted by the electroluminescent layer 4 are superimposed, which helps to improve the brightness of the light-emitting device 101. In addition, while keeping the overall brightness of the light-emitting device 101 constant, the design of the photoluminescent layer 20 can play a role in compensating for the brightness, which helps to reduce the driving voltage for driving the electroluminescent layer 4 to emit light, thereby helping to reduce the power consumption of the light-emitting device 101 and extend its service life.

[0083] In some embodiments, the light-emitting device 101 may further include a driving circuit structure. The driving circuit structure is used to drive the electroluminescent element 10. Specifically, the driving circuit structure includes a driving module and a light signal control module. The driving module is electrically connected to the electroluminescent element 10 and is used to provide a voltage to drive the electroluminescent element 10 to emit light. The light signal control module is electrically connected to the driving module and is used to collect light signals and control the driving voltage of the electroluminescent element 10 according to the light signals, thereby regulating the luminous intensity of the electroluminescent layer 10. The light signals include light received by the photoluminescent layer 20, such as external light or light emitted by the electroluminescent layer 10. The light signal control module may include a photoresistor 400.

[0084] Fourthly, this application also relates to a display device, which includes the display panel 100 provided in this application, or the display panel 100 prepared by the method described above, or the light-emitting device described above. The display device can be any electronic product with display functionality, including but not limited to smartphones, tablets, laptops, digital cameras, digital camcorders, smart wearable devices, smart weighing scales, in-vehicle displays, televisions, or e-book readers. Smart wearable devices can be, for example, smart bracelets, smartwatches, virtual reality (VR) headsets, etc.

[0085] Fifthly, this application also proposes a control method for a display panel 100, the control method comprising the following steps:

[0086] S1, a display panel 100 is provided, the display panel 100 includes an electroluminescent element 10 and a photoluminescent layer 20, the electroluminescent element 10 includes a stacked anode 1, an electroluminescent layer 4 and a cathode 2, and the photoluminescent layer 20 is disposed on the side of the electroluminescent element 10 facing the light-emitting surface of the display panel 100.

[0087] S2, acquire the reference light signal of the display panel 100;

[0088] S3, acquire the real-time light signal of the display panel 100, and output a corresponding driving voltage to the electroluminescent element 10 according to the reference light signal and the real-time light signal.

[0089] It can be understood that the reference light signal refers to the expected brightness or light intensity of the display panel 100, while the real-time light signal refers to the actual brightness or light intensity emitted by the display panel 100 as monitored in real time. By comparing the reference light signal and the real-time light signal, if the real-time light signal is less than the reference light signal, the driving voltage is increased to enhance the brightness of the electroluminescent element 10; if the real-time light signal is greater than the reference light signal, the driving voltage is decreased to reduce the brightness of the electroluminescent element 10. Since the light emitted by the photoluminescent layer 20 compensates for the brightness emitted by the electroluminescent element 10, this helps to reduce the driving voltage of the electroluminescent element 10, reduce power consumption, and extend the lifespan of the display panel 100.

[0090] In some embodiments, step S3 may specifically include: providing a photoresistor 400, the photoresistor 400 being disposed on the side of the electroluminescent element 10 away from the photoluminescent layer 20; detecting the resistance value of the photoresistor 400; acquiring the real-time light signal of the display panel 100 based on the resistance value, and outputting a corresponding control signal based on the change in the resistance value; and outputting a corresponding driving voltage to the electroluminescent element 10 based on the control signal.

[0091] The photoresistor 400 can sense the real-time light signal of the display panel 100. As the real-time light signal changes, the resistance of the photoresistor 400 will change, thereby playing a role in regulating the driving voltage.

[0092] In actual processing, when preparing the display panel 100, the brightness of the composite film of the photoluminescent layer 20 and the electroluminescent element 10, which are prepared by the same process and have the same thickness and material, can be calibrated first to obtain the quantitative relationship between the brightness L1 of the emitted light and the driving voltage of the electroluminescent element 10, so as to better control the voltage of the electroluminescent element 10 by using a photoresistor 400 with a suitable resistance change.

[0093] The present application will be specifically described below through specific embodiments. These embodiments are only some embodiments of the present application and are not intended to limit the present application. Unless otherwise specified, the raw materials used in the following embodiments are all commercially available products.

[0094] Example 1

[0095] This embodiment provides a display panel and its manufacturing method, which specifically includes the following steps.

[0096] Step 1: After cleaning and drying the ITO substrate (70nm thickness for the ITO electrode and 0.5mm thickness for the glass substrate), treat it in a UV ozone cleaner for 15 minutes. On the treated ITO anode, spin-coat PEDOT:PPS and cure to obtain a 100nm thick hole injection layer. Spin-coat a chlorobenzene solution of TFB on the hole injection layer and cure to obtain a 40nm thick hole transport layer. Spin-coat a hexane solution of blue quantum dots ZnCdS@ZnS (emission peak wavelength 470nm) on the hole transport layer and cure to obtain a 40nm thick electroluminescent layer. Spin-coat an ethanol solution of ZnO on the electroluminescent layer and cure to obtain a 20nm thick electron transport layer. Vacuum-deposit a 100nm thick Ag layer on the electron transport layer to obtain a cathode, and then encapsulate it to obtain the electroluminescent layer. The structure of the electroluminescent layer is: ITO / PEDOT:PSS / TFB / QD / ZnO / Ag.

[0097] Step 2: Disperse the luminescent material in dodecane to prepare a luminescent material solution; mix the luminescent material solution with acrylic resin and stir with a magnetic stirrer until a fully dissolved mixed solution is formed. In the mixed solution, the luminescent material is blue quantum dot luminescent material CdSe@ZnS, with a concentration of 40 mg / ml, and the mass ratio of acrylic resin to luminescent material is 4:1. Spin-coat the mixed solution onto the cathode prepared in Step 1, then irradiate with UV light for more than 5 minutes, and heat at 80°C for 30 minutes to cure the film, obtaining a photoluminescent layer with a thickness of 40 nm. The transmittance was measured by an Ocean Optic USB2000+ spectrometer and was approximately 94%.

[0098] Example 2

[0099] This embodiment is basically the same as Embodiment 1, except that in step 2 of this embodiment, the luminescent material is changed to ZnCdS@ZnS, and the transmittance is measured to be approximately 92%. Apart from this, all other parameters and steps remain unchanged.

[0100] Example 3

[0101] This embodiment is basically the same as Embodiment 1, except that in step 2 of this embodiment, the luminescent material is replaced with Y2O3 nanoparticles, and the light transmittance is measured to be approximately 96%. Apart from this, all other parameters and steps remain unchanged.

[0102] Comparative Example 1

[0103] This comparative example is basically the same as Example 1, except that in step 2 of this comparative example, the amount of luminescent material added is changed from 40 mg / ml to 0, that is, no luminescent material is added. Other than that, all other parameters and steps remain unchanged.

[0104] (a) The performance of the above-described embodiments and comparative devices under a fixed illumination (500 nits) was tested, and the test results were recorded in Table 1-2.

[0105] The detection method is as follows:

[0106] (1) The test method for the driving voltage (V) is as follows: it is obtained by measuring with a Keithley 2400 high-precision digital source meter.

[0107] (2) The test method for lifespan T95@1000nit is as follows:

[0108] The time required for a device's brightness to decrease to a certain percentage of its maximum brightness under constant current or voltage drive, defined as T95, is the time it takes for the brightness to drop to 95% of its maximum brightness. This lifetime is the measured lifetime. To shorten the testing cycle, device lifetime testing is usually performed at high brightness by accelerating device aging, and the lifetime at high brightness is obtained by fitting an extended exponential decay brightness decay formula. For example, the lifetime at 1000 nits is measured as T95@1000nits. The specific calculation formula is as follows:

[0109]

[0110] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor. In this experiment, the lifetime of several groups of QLED devices under rated brightness was measured, and the value of A was found to be 1.7.

[0111] (3) The current efficiency (CE) is tested by using a Keithley 2400 high-precision digital source meter.

[0112] Table 1-1

[0113]

[0114]

[0115] Table 1-2

[0116] Drive voltage (V) LT95@1000nit(h) CE(cd / A) Example 1 4.8 126.65 27.85 Example 2 4.5 148.61 26.63 Example 3 4.6 131.95 26.17 Comparative Example 1 5.1 117.67 24.05

[0117] As can be seen from the table above, Examples 1 to 3 have driving voltages that are much lower than Comparative Example 1, and lifetimes and current efficiencies that are higher than Comparative Example 1. This indicates that setting a photoluminescent layer containing luminescent material on the electroluminescent layer helps to reduce the driving voltage of the device, extend the lifespan of the device, and improve the luminous efficiency of the device.

[0118] Furthermore, among Examples 1 to 3, Example 2 exhibits a more significant effect gain, namely, a greater decrease in driving voltage and a greater increase in lifetime and current efficiency. This indicates that using the core-shell quantum dot material ZnCdS@ZnS is more conducive to improving the compensation effect of the photoluminescent layer, extending the device's lifetime, and increasing the device's luminous efficiency.

[0119] (ii) Take the devices prepared in Example 2 and Comparative Example 1, and test the performance of the two devices under different external light irradiation. The test results are recorded in Tables 1-3.

[0120] Table 1-3

[0121]

[0122]

[0123] As can be seen from the table above, under different ambient light intensities (250 nit, 500 nit, 1000 nit), the device in Example 2 has a lower driving voltage, higher lifetime, and higher current efficiency than the device in Comparative Example 1. This further illustrates that setting a photoluminescent layer containing luminescent material on the electroluminescent layer helps to reduce the driving voltage of the device and extend its lifespan.

[0124] Examples 4 to 7

[0125] This embodiment is basically the same as Embodiment 2, except that in step 2 of this embodiment, the amount of luminescent material added is changed from 40 mg / ml to 10 mg / ml, 20 mg / ml, 60 mg / ml, and 70 mg / ml, respectively, as shown in Table 2-1. Other than this, all other parameters and steps remain unchanged.

[0126] The performance of the devices in Examples 2, 4 to 7 and Comparative Example 1 was tested under a fixed illumination (500 nits), and the test results are recorded in Table 2-2.

[0127] Table 2-1

[0128]

[0129] Table 2-2

[0130]

[0131]

[0132] As can be seen from the table above, compared with Comparative Example 1, Examples 2, 4 to 7 all have lower driving voltages and higher lifetimes and current efficiencies, indicating that setting a photoluminescent layer containing luminescent materials on the electroluminescent layer helps to reduce the driving voltage of the device and extend the lifespan of the device.

[0133] Furthermore, in Examples 2 and 4 to 7, the gain effects of Examples 2, 5, and 6 are more significant, indicating that controlling the amount of luminescent material in the photoluminescent layer within a suitable range, such as controlling the mass percentage of luminescent material in the photoluminescent layer within the range of 10% to 80%, helps to better reduce the driving voltage of the device and better extend the lifespan of the device. This may be because when too much luminescent material is added, it will absorb too much light emitted by the electroluminescent layer, thereby affecting the improvement of the display panel performance.

[0134] Display panel embodiment 1

[0135] The display panel in this embodiment has Figure 1 The structure shown includes a display panel comprising a photoresistor 400, a thin film transistor array layer 300, an electroluminescent element 10, a photoluminescent layer 20, and a polarizer 200 stacked together, wherein the electroluminescent layer and the photoluminescent layer have the structure described in Embodiment 2.

[0136] Specifically, the preparation steps are as follows:

[0137] A pre-fabricated substrate is provided, on which a CdS photoresistor with a thickness of 1000 nm is fabricated. A TFT array layer is then fabricated on the photoresistor. Following the steps in Example 2, an electroluminescent element 10 and a photoluminescent layer 20 are fabricated. Finally, a polarizer is fabricated on the photoluminescent layer 20 to obtain a display panel. The photoresistor fabrication steps are as follows: Cadmium sulfide powder is dispersed in an organic solvent and stirred using a magnetic stirrer until a fully dissolved cadmium sulfide solution is formed. The cadmium sulfide solution is spin-coated onto a second region. Then, a vacuum device is used to evacuate the system at 1 Pa for at least 15 minutes, and the system is heated at 100°C for at least 10 minutes to remove the organic solvent, thus obtaining the photoresistor.

[0138] Following the above preparation steps, CdS photoresistors of the same thickness and material were fabricated on a glass substrate. The resistance of the photoresistors was measured in both dark environments and under different ambient light conditions, and the resistance values ​​were detected. The relationship between the photoresistor resistance and the light intensity was found to be: R = R0 × 10^(-0.4L), where R0 is 100Ω, and the range of the photoresistor resistance is 1Ω to 10MΩ.

[0139] Display panel comparison 1

[0140] Comparative Example 1 of the display panel is basically the same as Example 1 of the display panel, except that in Comparative Example 1, an electroluminescent layer is prepared on the first region in accordance with step 1 of Comparative Example 1, and a photoluminescent layer is prepared on the photoresistor and the electroluminescent layer in accordance with step 2 of Comparative Example 1.

[0141] The display panels obtained from the above embodiments and comparative examples were subjected to performance testing. The test items included power consumption testing and lifespan testing. The power consumption test can be performed by using a multimeter to measure the input and output current power consumption (cof); the lifespan test can be performed by using the SED model to estimate the lifespan.

[0142] The results are recorded in Table 3.

[0143] Table 3

[0144] Display panel comparison 1 Display panel embodiment 1 W255 grayscale power consumption 2.5W 1.8W W255 grayscale lifespan 20000h 26000h

[0145] As can be seen from the table above, the display panel embodiment 1 has lower power consumption and higher lifespan than Comparative Example 1, indicating that the display panel of this application, by employing an electroluminescent layer with a photoluminescent layer, helps to reduce the power consumption of the panel and extend its lifespan.

[0146] The technical solutions provided by the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The description of the above embodiments is only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A display panel, characterized in that, The device includes an electroluminescent element and a photoluminescent layer. The electroluminescent element includes a stacked anode, an electroluminescent layer, and a cathode. The photoluminescent layer is disposed on the side of the electroluminescent element facing the light-emitting surface of the display panel. The material of the photoluminescent layer includes a photoluminescent material with light-transmitting properties.

2. The display panel according to claim 1, characterized in that, The thickness of the photoluminescent layer is 10–60 nm; and / or, The light transmittance of the photoluminescent layer is greater than or equal to 90%; and / or, The absolute value of the difference between the emission peak wavelength of the photoluminescent layer and the emission peak wavelength of the electroluminescent layer is less than or equal to 10 nm; and / or, The photoluminescent material includes one or more of fluorescent materials and first quantum dot luminescent materials. The fluorescent materials include LiCO3, Al2O3, Fe2O3, Eu2O3, BaCO3, SrCO3, SiO2, Eu2O3, Y2O3, 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III)), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium(III), diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, and TT. The first quantum dot luminescent material comprises one or more of the following: PX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing BN covalent bonds, hybrid localized charge transfer excited-state material, and exciton complex luminescent material; the first quantum dot luminescent material comprises at least one of the following: single-structure quantum dot, core-shell quantum dot, and perovskite semiconductor material, wherein the shell of the core-shell quantum dot comprises one or more layers; the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are respectively selected from group II-VI compounds, IV-VI compounds, etc. Group II-VI compounds, at least one of Group III-V compounds and Group I-III-VI compounds; wherein the Group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; wherein the IV-VI compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN At least one of P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them; and / or, The electroluminescent layer is made of organic light-emitting materials or second quantum dot light-emitting materials. The organic light-emitting materials include 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, and thermally active materials. The second quantum dot luminescent material comprises one or more of the following: delayed-release materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited-state materials, and excitocomplex luminescent materials; the second quantum dot luminescent material comprises at least one of the following: single-structure quantum dots, core-shell quantum dots, and perovskite semiconductor materials; the shell of the core-shell quantum dot comprises one or more layers, and the material of the single-structure quantum dot, the core material of the core-shell quantum dot, and the shell material of the core-shell quantum dot are respectively selected from group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. At least one of the following: The group II-VI compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnS At least one of eTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; wherein the IV-VI compound is selected from at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe;The III-V compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN At least one of P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI group compound is selected from at least one of CuInS2, CuInSe2, and AgInS2; the perovskite semiconductor material is selected from doped or undoped inorganic perovskite semiconductors or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is Cs; + Ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ Where n≥2, M is a divalent metal cation selected from Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Eu 2+ At least one of them, where X is a halide anion selected from Cl. - ,Br - I - At least one of them.

3. The display panel according to claim 2, characterized in that, The photoluminescent layer further includes a polymer, which comprises one or more of acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, alkyd resin, and polyimide; and / or, In the photoluminescent layer, the mass percentage of the photoluminescent material is 10-80%.

4. The display panel according to claim 2, characterized in that, The display panel also includes: A driving module, electrically connected to the electroluminescent element, is used to provide a driving voltage that causes the electroluminescent layer to emit light; and, An optical signal control module, electrically connected to the driving module, is used to collect optical signals and control the driving voltage according to the optical signals to regulate the luminescence intensity of the electroluminescent layer, wherein the optical signals include light received by the photoluminescent layer.

5. The display panel according to claim 4, characterized in that, The optical signal control module includes a photoresistor, which is located on the side of the electroluminescent element away from the photoluminescent layer. The photoresistor is electrically connected to the driving module, and its resistance changes with the optical signal to regulate the driving voltage.

6. The display panel according to claim 5, characterized in that, The optical signal control module further includes a driving transistor, and the photoresistor is electrically connected to the driving module through the driving transistor; and / or, The resistance of the photoresistor varies from 1Ω to 10MΩ.

7. A method for manufacturing a display panel, characterized in that, Includes the following steps: A prefabricated device is provided, the prefabricated device including an electroluminescent element, the electroluminescent element including a stacked anode, an electroluminescent layer and a cathode; A photoluminescent material with light-transmitting properties is provided, and the photoluminescent material is disposed on one side of the electroluminescent element to form a photoluminescent layer, thereby obtaining a display panel.

8. The preparation method according to claim 7, characterized in that, The step of forming a photoluminescent layer on one side of the electroluminescent element includes: providing a film material, depositing the film material on the light-emitting side of the electroluminescent element to form a liquid film, and then curing the liquid film to obtain a photoluminescent layer; wherein the film material includes the photoluminescent material, and the photoluminescent material includes quantum dot luminescent material and fluorescent material; And / or, the step of providing a prefabricated device includes: providing a thin-film transistor array layer, disposing a photoresistor on one side of the thin-film transistor array layer, and then disposing an electroluminescent element on the side of the photoresistor opposite to the thin-film transistor array layer; or, providing a photoresistor, disposing a thin-film transistor array layer on one side of the photoresistor, and then disposing an electroluminescent element on the side of the thin-film transistor array layer opposite to the photoresistor.

9. The preparation method according to claim 8, characterized in that, The membrane material further includes a polymer, which comprises one or more of acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, alkyd resin, and polyimide; and / or, The membrane material further includes a solvent, which includes a first solvent or a second solvent. The first solvent includes one or more of C8 to C16 alkane solvents and C5 to C10 cycloalkane solvents. The second solvent includes one or more of chlorobenzene, C8 to C16 alkane solvents, and C5 to C10 cycloalkane solvents. The C8 to C16 alkane solvent is selected from one or more of octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, 2-methyloctane, 3-ethylheptane, 2,2-dimethyloctane, and 1-cyclohexyldecane. The C5 to C10 cycloalkane solvent is selected from one or more of cyclooctane, cycloheptane, cyclohexane, and cyclopentane.

10. The preparation method according to claim 9, characterized in that, The step of curing the liquid film to obtain a photoluminescent layer includes: irradiating the liquid film with ultraviolet light for 3 to 8 minutes to cure and obtain a photoluminescent layer.

11. The preparation method according to claim 10, characterized in that, After irradiating the liquid film with ultraviolet light for 3-8 minutes and before curing to obtain the photoluminescent layer, the liquid film is further subjected to heat treatment, wherein: The heat treatment temperature is 70–90°C; and / or, The heat treatment time is 5 to 30 minutes.

12. A light-emitting device, characterized in that, The device includes an electroluminescent element and a photoluminescent layer. The electroluminescent element includes a stacked anode, an electroluminescent layer, and a cathode. The photoluminescent layer is disposed on the side of the anode away from the electroluminescent layer, or on the side of the cathode away from the electroluminescent layer. The material of the photoluminescent layer includes a photoluminescent material with light-transmitting properties.

13. A display device, characterized in that, It includes the display panel as described in any one of claims 1 to 6, or the display panel prepared by the method described in any one of claims 7 to 11, or the light-emitting device as described in claim 12.

14. A method for controlling a display panel, characterized in that, Includes the following steps: A display panel is provided, the display panel including an electroluminescent element and a photoluminescent layer, the electroluminescent element including a stacked anode, an electroluminescent layer and a cathode, the photoluminescent layer being disposed on the side of the electroluminescent element facing the light-emitting surface of the display panel; Obtain the reference light signal of the display panel; The real-time light signal of the display panel is acquired, and a corresponding driving voltage is output to the electroluminescent element based on the reference light signal and the real-time light signal.

15. The control method according to claim 1, characterized in that, The steps of acquiring the real-time light signal of the display panel and outputting a corresponding driving voltage to the electroluminescent layer based on the reference light signal and the real-time light signal include: A photoresistor is provided, the photoresistor being disposed on the side of the electroluminescent element opposite to the photoluminescent layer; Detect the resistance value of the photoresistor; Based on the resistance value, the real-time light signal of the display panel is obtained, and a corresponding control signal is output according to the change of the resistance value; Based on the control signal, a corresponding driving voltage is output to the electroluminescent layer.

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