A dry vacuum system with VCSEL chip and variable volume function

Abstract

This invention discloses a dry vacuum system for VCSEL chips with variable volume functionality. The invention relates to the field of dry vacuum equipment technology. The dry vacuum system includes a base, a chassis, a flexible metal tube, a vacuum mechanism, and an auxiliary mechanism. The vacuum mechanism includes a housing and feet. The chassis, feet, and auxiliary mechanism are all fixedly connected to the base. The housing has vents. The auxiliary mechanism includes a molecular pump. The flexible metal tube is fixedly connected to the vents and the molecular pump. The vacuum mechanism and auxiliary mechanism are both electrically connected to the chassis. This invention uses multiple independent temperature control zones to compensate for heat loss in the cavity in real time, thereby achieving extreme temperature uniformity on the wafer surface. The cavity volume can be adjusted to fit the wafer as needed, and the internal auxiliary gas is actively circulated to ensure full contact between the wafer and the auxiliary gas, improving wafer reaction efficiency.

Description

Technical Field

[0001] This invention relates to the field of dry vacuum equipment technology, specifically a dry vacuum system with a VCSEL chip and variable volume function. Background Technology

[0002] VCSEL, as a high-performance semiconductor laser chip, has its core manufacturing processes as metal-organic chemical vapor deposition (MOCVD) epitaxial growth and plasma-enhanced chemical vapor deposition (PECVD) thin film deposition. These processes must be carried out in a vacuum environment with extremely high cleanliness.

[0003] Traditional vacuum systems typically use oil diffusion pumps or oil rotary pumps for evacuation. However, the inherent oil contamination, such as oil vapor backflow and oil mist contamination, has become a key bottleneck restricting the performance and yield improvement of VCSELs. These hydrocarbon contaminants can enter the epitaxial reaction chamber, decompose at high temperatures, and adhere to the wafer surface, leading to crystal defects and increased interface state density in the epitaxial layer. This, in turn, causes a series of problems such as decreased device luminous efficiency, increased threshold current, and deteriorated reliability. In addition, uneven temperature and protective atmosphere within the chamber during wafer fabrication can also cause quality problems in wafer production. Summary of the Invention

[0004] The purpose of this invention is to provide a dry vacuum system with variable volume function for VCSEL chips, so as to solve the problems in the prior art.

[0005] To achieve the above objectives, the present invention provides the following technical solution: A dry vacuum system for VCSEL chips with variable volume function includes a base, a chassis, a flexible metal tube, a vacuum mechanism, and an auxiliary mechanism. The vacuum mechanism includes a housing and a base. The chassis, the base, and the auxiliary mechanism are all fixedly connected to the base. The housing is provided with air holes. The auxiliary mechanism includes a molecular pump. The flexible metal tube is fixedly connected to the air holes and the molecular pump. The vacuum mechanism and the auxiliary mechanism are both connected to the chassis via electrical signals.

[0006] This invention relates to a device for providing a highly stable and extremely clean high-vacuum or ultra-high-pressure environment for the ultra-fine manufacturing process of VCSELs, preventing hydrocarbon contamination of the VCSEL chip. Before the process, the vacuum mechanism is opened, the substrate wafer is placed in, the chamber is closed, and the auxiliary mechanism is activated to rapidly evacuate the vacuum mechanism from atmospheric pressure to a medium vacuum range, expelling most of the gas. When the pressure drops to a level where the molecular pump can be activated, the molecular pump starts and operates at high speed, rapidly reducing the pressure in the vacuum mechanism to the high vacuum base pressure required for the process through a flexible metal tube. The chamber walls and fixtures absorb water vapor and gas. During the process, auxiliary gas is continuously introduced, and the auxiliary mechanism continuously evacuates the vacuum to maintain dynamic process pressure and continuously remove byproducts and unreacted gases. The temperature inside the chamber is maintained. The vacuum mechanism adjusts the chamber volume to match the wafer as needed and actively circulates the internal auxiliary gas to ensure that the wafer is in full contact with the auxiliary gas, thereby improving the wafer reaction efficiency. After the process is completed, the power supply is stopped, the chamber is evacuated to a high vacuum again for cleaning, the dry vacuum pump is turned off, and high-purity nitrogen is introduced into the chamber to restore atmospheric pressure before the wafer is removed.

[0007] Furthermore, the vacuum mechanism also includes a cabinet door, a heater, a vacuum gauge, and a shelf. The cabinet door is hinged to the housing, and the base, heater, vacuum gauge, and shelf are all fixedly connected to the housing. The cabinet door is equipped with an observation window, the base is located at the bottom of the housing, and there are several sets of heaters evenly arranged on the inner wall of the housing. The vacuum gauge is connected to the housing via an electrical signal.

[0008] Before the process begins, the cabinet door is opened, the substrate wafer is placed on the storage plate, the cabinet door is closed, and the auxiliary mechanism is activated. The vacuum mechanism is rapidly pumped from atmospheric pressure to the medium vacuum range through the vent, and most of the gas is discharged. When the pressure drops to a level where the molecular pump can be activated, the molecular pump starts and operates at high speed. Through a flexible metal tube, the pressure in the vacuum mechanism is rapidly reduced to the high vacuum base pressure required for the process, and water vapor and gas adsorbed on the surfaces of the chamber walls and fixtures are extracted. During the process, the wafer's process status is observed through the observation window. Several groups of heaters evenly arranged on the inner wall of the chamber divide the area into multiple independently controlled zones. Closed-loop feedback adjusts the power of each zone in real time to compensate for the non-uniformity of heat loss in the chamber, thereby achieving the ultimate temperature uniformity of the wafer surface. The vacuum gauge accurately measures the pressure across the entire range from atmospheric pressure to ultra-high vacuum.

[0009] Furthermore, the vacuum mechanism also includes a cavity-changing mechanism and an air-equalizing mechanism. The cavity-changing mechanism includes a first motor and an assembly plate. The first motor is fixedly connected to the housing, and the air-equalizing mechanism is fixedly connected to the assembly plate. Both the first motor and the air-equalizing mechanism are connected to the housing via electrical signals.

[0010] The chassis sends electrical control signals to the first motor and the air distribution mechanism. The cavity adjustment mechanism adjusts the chamber volume to match the wafer according to the requirements. The air distribution mechanism actively circulates the internal auxiliary gas, so that the wafer can fully contact the auxiliary gas and improve the wafer reaction efficiency.

[0011] Furthermore, the cavity-changing mechanism also includes a threaded rod, and the housing is also provided with a top hole and a limiting strip. The output end of the first motor is fixedly connected to the threaded rod, the threaded rod is rotatably connected to the top hole, the assembly plate is provided with an internal threaded hole and a sliding groove, the threaded rod is connected to the internal threaded hole by a thread, the limiting strip contacts the sliding groove, and the assembly plate is slidably connected to the housing.

[0012] According to the electrical control signal sent by the chassis, the first motor outputs fixed-axis torque to the threaded rod, which rotates around the axis of the top hole. Through the threaded connection between the threaded rod and the internal threaded hole, the limit strip slides along the slide groove, and the assembly plate slides in a sealed manner inside the box. The volume of the cavity formed by the side of the assembly plate away from the first motor and the box changes, and the wafers of different processes can be adjusted and adapted according to the requirements.

[0013] Furthermore, the air distribution mechanism includes a second motor, a second gear rod, a ring turntable, and a servo cylinder. The second motor is fixedly connected to the mounting plate, and the output end of the second motor is fixedly connected to the second gear rod. The ring turntable is provided with a side ring tooth groove, and the second gear rod meshes with the tooth surface of the side ring tooth groove. The ring turntable is rotatably connected to the mounting plate. The second motor and the servo cylinder are both connected to the chassis via electrical signals.

[0014] During the process, the chassis sends an electrical control signal to the second motor, which outputs a fixed-axis torque to the second gear. The second gear rotates around its axis, and the torque is transmitted to the ring disk through the meshing of the teeth between the second gear and the side ring tooth grooves on the ring disk. The ring disk rotates around its axis, and the ring disk drives several sets of circumferentially distributed fan mechanisms to circulate the auxiliary gas inside the chassis, so that the wafer can fully contact the auxiliary gas and improve the wafer reaction efficiency.

[0015] Furthermore, the wind distribution mechanism also includes a top plate rod and a fan adjustment mechanism. The servo cylinder is fixedly connected to the ring turntable, and the output end of the servo cylinder is fixedly connected to the top plate rod. The assembly plate is also provided with a center hole, and the top plate rod contacts the center hole. The fan adjustment mechanism is provided in several groups, and the several groups of fan adjustment mechanisms are evenly distributed along the circumference of the ring turntable. The top plate rod is provided with a hinge buckle. The fan adjustment mechanism includes a slide rail and a fan blade. The slide rail is fixedly connected to the ring turntable, and the fan blade is hinged to the hinge buckle.

[0016] The second motor drives the rotating disc to rotate around its axis. The rotating disc drives several sets of evenly distributed fan adjustment mechanisms to circulate the auxiliary gas inside the housing. The output end of the servo cylinder moves according to the electrical control signal of the housing, and the output end of the servo cylinder drives the top plate rod to move. The hinge buckle on the top plate rod drives the fan adjustment mechanism to adjust the tilt angle of the fan blades, so that the angular momentum of the fan blades when pushing the air changes, and the columnar vortex formed changes continuously, so that the wafer can fully contact the auxiliary gas.

[0017] Furthermore, the fan control mechanism also includes a hinge seat and a rotating shaft. The hinge seat is slidably connected to the slide rail, the rotating shaft is hinged to the hinge seat, and the rotating shaft is fixedly connected to the fan blade.

[0018] The output end of the servo cylinder drives the top plate rod to move, the hinge buckle on the top plate rod drives the fan blade, the hinge seat moves along the slide rail, the rotating shaft rotates around the hinge seat, which changes the tilt angle of the fan blade, changes the angular momentum of the fan blade when it pushes the air, and the resulting columnar vortex changes continuously.

[0019] Furthermore, the auxiliary mechanisms also include a cold sink and a dry vacuum pump. The cold sink, dry vacuum pump, and molecular pump are all fixedly connected to the platform. The dry vacuum pump is connected to the cold sink and molecular pump through pipes. The cold sink, dry vacuum pump, and molecular pump are all connected to the chassis through electrical signals.

[0020] Before the process begins, the vacuum mechanism is opened, the substrate wafer is placed in, the chamber is closed, and the dry vacuum pump is started to rapidly evacuate the vacuum mechanism from atmospheric pressure to a medium vacuum range. Most of the gas is expelled, and the cold trap captures corrosive, toxic, or condensable gaseous byproducts generated during the process, protecting the dry pump from corrosion and damage. When the pressure drops to a level where the molecular pump can be started, the molecular pump is activated and operates at high speed. Through a flexible metal tube, the pressure in the vacuum mechanism is rapidly reduced to the high vacuum base pressure required for the process, extracting water vapor and gas adsorbed on the surfaces of the chamber walls, fixtures, etc.

[0021] Compared with the prior art, the beneficial effects of this invention are as follows: This invention designs a vacuum mechanism, which divides the chamber into multiple independently controlled areas by several groups of heaters evenly arranged on the inner wall of the chamber. Closed-loop feedback adjusts the power of each area in real time to compensate for the unevenness of heat loss within the chamber, thereby achieving extreme temperature uniformity on the wafer surface. This invention also designs a variable cavity mechanism and a uniform airflow mechanism. Based on the electrical control signal sent by the chassis, the first motor drives the assembly plate to slide in a sealed manner within the chamber via a threaded rod. The volume of the chamber formed by the assembly plate on the side away from the first motor and the chamber changes, adjusting to accommodate wafers of different processes as needed. The second motor drives a rotating disc to rotate around its axis. The rotating disc drives several groups of evenly distributed circumferential fans to circulate the auxiliary gas within the chamber. The servo cylinder output is displaced according to the electrical control signal from the chassis, and the servo cylinder outputs... The top plate rod is displaced by the end of the device, and the hinge on the top plate rod drives the fan adjustment mechanism to adjust the tilt angle of the fan blades. This changes the angular momentum of the fan blades as they push the air, and the resulting columnar vortex changes continuously, ensuring that the wafer fully contacts the auxiliary gas and improving the wafer reaction efficiency. The invention also incorporates an auxiliary mechanism that traps corrosive, toxic, or condensable gaseous byproducts generated during the cold trapping process, protecting the dry pump from corrosion and damage. The molecular pump is activated, and through a flexible metal tube, the pressure in the vacuum mechanism is rapidly reduced to the high vacuum base pressure required for the process, preventing pump vibration from interfering with the reaction chamber. Furthermore, the invention uses multiple independent temperature control zones to compensate for heat loss in the chamber in real time, achieving extreme temperature uniformity on the wafer surface. The chamber volume is adjusted to fit the wafer as needed, and the internal auxiliary gas is actively circulated, ensuring that the wafer fully contacts the auxiliary gas and improving the wafer reaction efficiency. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0023] Figure 2 This is a schematic diagram of the vacuum mechanism structure of the present invention;

[0024] Figure 3 This is an isometric schematic diagram of the vacuum mechanism of the present invention;

[0025] Figure 4 This is a partial cross-sectional view of the vacuum mechanism of the present invention;

[0026] Figure 5 for Figure 4 A magnified view of part A;

[0027] Figure 6 This is a schematic diagram of the wind distribution mechanism of the present invention;

[0028] Figure 7 for Figure 6 A magnified view of part B;

[0029] Figure 8 This is a partial cross-sectional view of the wind distribution mechanism of the present invention;

[0030] Figure 9 for Figure 8 A magnified view of a portion of C;

[0031] Figure 10 This is a schematic diagram of the auxiliary mechanism structure of the present invention.

[0032] In the diagram: 1. Platform; 2. Chassis; 3. Flexible metal tube; 4. Vacuum mechanism; 41. Housing; 411. Air vent; 412. Top hole; 413. Limiting strip; 42. Cabinet door; 421. Observation window; 43. Foot; 44. Heater; 45. Vacuum gauge; 46. Variable cavity mechanism; 461. First motor; 462. Threaded rod; 463. Assembly plate; 4631. Internal threaded hole; 4632. Center hole; 4633. Slide groove ; 47. Air distribution mechanism; 471. Second motor; 472. Second gear rod; 473. Circular turntable; 4731. Side ring tooth groove; 474. Servo cylinder; 475. Top plate rod; 4751. Hinge buckle; 476. Fan adjustment mechanism; 4761. Slide rail; 4762. Hinge seat; 4763. Rotating shaft; 4764. Fan blade; 48. Shelf; 5. Auxiliary mechanism; 51. Cooling trap; 52. Dry vacuum pump; 53. Molecular pump. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] like Figure 1 , Figure 2 As shown, the present invention provides a technical solution for a dry vacuum system with variable volume function for VCSEL chips, including a base 1, a chassis 2, a flexible metal tube 3, a vacuum mechanism 4, and an auxiliary mechanism 5. The vacuum mechanism 4 includes a housing 41 and a base 43. The chassis 2, the base 43, and the auxiliary mechanism 5 are all fixedly connected to the base 1. The housing 41 is provided with an air hole 411. The auxiliary mechanism 5 includes a molecular pump 53. The flexible metal tube 3 is fixedly connected to the air hole 411 and the molecular pump 53. The vacuum mechanism 4 and the auxiliary mechanism 5 are both connected to the chassis 2 via electrical signals.

[0035] This invention provides a device for providing a highly stable and extremely clean high-vacuum or ultra-high-pressure environment for the ultra-fine manufacturing process of VCSELs, preventing hydrocarbon contamination of the VCSEL chip. Before the process, the vacuum mechanism 4 is opened, the substrate wafer is placed in, the chamber is closed, and the auxiliary mechanism 5 is activated to rapidly evacuate the vacuum mechanism 4 from atmospheric pressure to a medium vacuum range, expelling most of the gas. When the pressure drops to a level where the molecular pump 53 can be activated, the molecular pump 53 starts and operates at high speed, rapidly reducing the pressure in the vacuum mechanism 4 to the high vacuum base pressure required for the process through the flexible metal tube 3. The vacuum pump 52 is used to extract water vapor and gas adsorbed on the surfaces of the chamber walls and fixtures. During the process, auxiliary gas is continuously introduced, and the auxiliary mechanism 5 continuously evacuates the vacuum to maintain dynamic process pressure and continuously discharge by-products and unreacted gases after the reaction, maintaining the temperature inside the chamber 41. The vacuum mechanism 4 adjusts the chamber volume to match the wafer as needed and actively circulates the internal auxiliary gas to ensure that the wafer is in full contact with the auxiliary gas, thereby improving the wafer reaction efficiency. After the process is completed, the power supply is stopped, the chamber is evacuated to a high vacuum again for cleaning, the dry vacuum pump 52 is turned off, high-purity nitrogen is introduced into the chamber to restore atmospheric pressure, and the wafer is removed.

[0036] like Figure 2 , Figure 3 As shown, the vacuum mechanism 4 also includes a cabinet door 42, a heater 44, a vacuum gauge 45, and a shelf 48. The cabinet door 42 is hinged to the housing 41. The base 43, heater 44, vacuum gauge 45, and shelf 48 are all fixedly connected to the housing 41. The cabinet door 42 is provided with an observation window 421. The base 43 is located at the bottom of the housing 41. Several sets of heaters 44 are provided, and the several sets of heaters 44 are evenly arranged on the inner wall of the housing 41. The vacuum gauge 45 is connected to the chassis 2 via an electrical signal.

[0037] Before the process begins, the cabinet door 42 is opened, the substrate wafer is placed on the storage plate 48, the cabinet door 42 is closed, and the auxiliary mechanism 5 is activated. The vacuum mechanism 4 is rapidly pumped from atmospheric pressure to the medium vacuum range through the vent 411, and most of the gas is discharged. When the pressure is low enough for the molecular pump 53 to be activated, the molecular pump 53 is activated and operates at high speed. The pressure in the vacuum mechanism 4 is rapidly reduced to the high vacuum base pressure required for the process through the flexible metal tube 3, and water vapor and gas adsorbed on the surface of the chamber wall, fixtures, etc. are extracted. During the process, the wafer process status is observed through the observation window 421. Several sets of heaters 44, which are evenly arranged on the inner wall of the cabinet 41, are divided into multiple independently controlled areas. The closed-loop feedback adjusts the power of each area in real time to compensate for the non-uniformity of heat loss in the cavity, thereby achieving the ultimate temperature uniformity of the wafer surface. The vacuum gauge 45 accurately measures the pressure in the full range from atmospheric pressure to ultra-high vacuum.

[0038] like Figure 3 , Figure 4As shown, the vacuum mechanism 4 also includes a cavity changing mechanism 46 and an air distribution mechanism 47. The cavity changing mechanism 46 includes a first motor 461 and an assembly plate 463. The first motor 461 is fixedly connected to the housing 41, and the air distribution mechanism 47 is fixedly connected to the assembly plate 463. The first motor 461 and the air distribution mechanism 47 are both connected to the housing 2 via electrical signals.

[0039] The chassis 2 sends an electrical control signal to the first motor 461 and the air distribution mechanism 47. The variable cavity mechanism 46 adjusts the chamber volume to match the wafer according to the requirements. The air distribution mechanism 47 actively circulates the internal auxiliary gas, so that the wafer can fully contact the auxiliary gas and improve the wafer reaction efficiency.

[0040] like Figure 4 , Figure 5 , Figure 6 As shown, the variable cavity mechanism 46 also includes a threaded rod 462, and the housing 41 is also provided with a top hole 412 and a limiting strip 413. The output end of the first motor 461 is fixedly connected to the threaded rod 462, and the threaded rod 462 is rotatably connected to the top hole 412. The assembly plate 463 is provided with an internal threaded hole 4631 and a sliding groove 4633. The threaded rod 462 is connected to the internal threaded hole 4631 by a thread, the limiting strip 413 is in contact with the sliding groove 4633, and the assembly plate 463 is slidably connected to the housing 41.

[0041] According to the electrical control signal sent by the chassis 2, the first motor 461 outputs fixed-axis torque to the threaded rod 462. The threaded rod 462 rotates around the axis of the top hole 412. Through the threaded connection between the threaded rod 462 and the internal threaded hole 4631, the limit bar 413 slides along the slide groove 4633. The assembly plate 463 slides in a sealed manner inside the housing 41. The volume of the chamber formed by the side of the assembly plate 463 away from the first motor 461 and the housing 41 changes, and it can be adjusted to adapt to wafers of different processes according to requirements.

[0042] like Figure 6 , Figure 7 As shown, the air distribution mechanism 47 includes a second motor 471, a second gear rod 472, a ring turntable 473, and a servo cylinder 474. The second motor 471 is fixedly connected to the mounting plate 463, and the output end of the second motor 471 is fixedly connected to the second gear rod 472. The ring turntable 473 is provided with a side ring tooth groove 4731, and the second gear rod 472 meshes with the tooth surface of the side ring tooth groove 4731. The ring turntable 473 is rotatably connected to the mounting plate 463. The second motor 471 and the servo cylinder 474 are both connected to the chassis 2 via electrical signals.

[0043] During the process, the chassis 2 sends an electrical control signal to the second motor 471. The second motor 471 outputs a fixed-axis torque to the second gear 472. The second gear 472 rotates around its axis. Through the meshing of the teeth between the second gear 472 and the side ring tooth groove 4731 on the ring disk 473, the torque of the second gear 472 is transmitted to the ring disk 473. The ring disk 473 rotates around its axis. The ring disk 473 drives several sets of circumferentially distributed fan mechanisms 476 to circulate and blow the auxiliary gas in the housing 41, so that the wafer can fully contact the auxiliary gas and improve the wafer reaction efficiency.

[0044] like Figure 8 , Figure 9 As shown, the wind distribution mechanism 47 also includes a top plate rod 475 and a fan adjustment mechanism 476. The servo cylinder 474 is fixedly connected to the ring turntable 473, and the output end of the servo cylinder 474 is fixedly connected to the top plate rod 475. The mounting plate 463 is also provided with a center hole 4632, and the top plate rod 475 contacts the center hole 4632. The fan adjustment mechanism 476 is provided with several groups, and the several groups of fan adjustment mechanisms 476 are evenly distributed along the circumference of the ring turntable 473. The top plate rod 475 is provided with a hinge buckle 4751. The fan adjustment mechanism 476 includes a slide rail 4761 and a fan blade 4764. The slide rail 4761 is fixedly connected to the ring turntable 473, and the fan blade 4764 is hinged to the hinge buckle 4751.

[0045] The second motor 471 drives the ring turntable 473 to rotate around its axis. The ring turntable 473 drives several sets of circumferentially distributed fan adjustment mechanisms 476 to circulate and blow the auxiliary gas in the housing 41. The output end of the servo cylinder 474 is displaced according to the electronic control signal of the housing 2. The output end of the servo cylinder 474 drives the top plate rod 475 to move. The hinge buckle 4751 on the top plate rod 475 drives the fan adjustment mechanism 476 to adjust the tilt angle of the fan blades 4764, so that the angular momentum of the fan blades 4764 when pushing the air changes, and the columnar vortex formed is constantly changing, so that the wafer can fully contact the auxiliary gas.

[0046] like Figure 8 , Figure 9 As shown, the fan control mechanism 476 also includes a hinge seat 4762 and a rotating shaft 4763. The hinge seat 4762 is slidably connected to the slide rail 4761, the rotating shaft 4763 is hinged to the hinge seat 4762, and the rotating shaft 4763 is fixedly connected to the fan blade 4764.

[0047] The output end of the servo cylinder 474 drives the top plate rod 475 to move. The hinge buckle 4751 on the top plate rod 475 drives the fan blade 4764. The hinge seat 4762 moves along the slide rail 4761. The rotating shaft 4763 rotates around the hinge seat 4762, which changes the tilt angle of the fan blade 4764. The angular momentum of the fan blade 4764 when it pushes the air changes, and the resulting columnar vortex changes continuously.

[0048] like Figure 10As shown, the auxiliary mechanism 5 also includes a cold sink 51 and a dry vacuum pump 52. The cold sink 51, the dry vacuum pump 52, and the molecular pump 53 are all fixedly connected to the base 1. The dry vacuum pump 52 is connected to the cold sink 51 and the molecular pump 53 through pipes. The cold sink 51, the dry vacuum pump 52, and the molecular pump 53 are all connected to the chassis 2 through electrical signals.

[0049] Before the process, the vacuum mechanism 4 is opened and the substrate wafer is placed in. The chamber is closed and the dry vacuum pump 52 is started to quickly pump the vacuum mechanism 4 from atmospheric pressure to the medium vacuum range. Most of the gas is discharged. The cold trap 51 captures the corrosive, toxic or condensable gaseous byproducts generated by the process and protects the dry pump from corrosion and damage. When the pressure is low enough for the molecular pump 53 to start, the molecular pump 53 is started. The molecular pump 53 works at high speed and quickly reduces the pressure in the vacuum mechanism 4 to the high vacuum base pressure required by the process through the flexible metal tube 3, and extracts the water vapor and gas adsorbed on the surface of the chamber wall, fixtures and other surfaces.

[0050] The working principle of this invention is as follows: Before the process, the cabinet door 42 is opened, the substrate wafer is placed on the storage plate 48, the cabinet door 42 is closed, and the auxiliary mechanism 5 is started. The vacuum mechanism 4 is rapidly pumped from atmospheric pressure to the medium vacuum range through the air vent 411, and most of the gas is discharged. When the pressure is low enough for the molecular pump 53 to start, the molecular pump 53 is started and operates at high speed. The pressure in the vacuum mechanism 4 is rapidly reduced to the high vacuum base pressure required for the process through the flexible metal tube 3, and the water vapor and gas adsorbed on the surface of the chamber wall, fixtures, etc. are extracted. During the process, the wafer process status is observed through the observation window 421. Several sets of heaters 44 evenly arranged on the inner wall of the cabinet 41 are divided into multiple independently controlled areas. The closed-loop feedback adjusts the power of each area in real time to compensate for the non-uniformity of heat loss in the cavity, thereby achieving the ultimate temperature uniformity of the wafer surface. The vacuum gauge 45 accurately measures the pressure in the full range from atmospheric pressure to ultra-high vacuum. According to the electrical control signal sent by the chassis 2, the first motor 461 outputs a constant... The shaft torque is transmitted to the threaded rod 462, which rotates around the axis of the top hole 412. Through the threaded connection between the threaded rod 462 and the internal threaded hole 4631, the limiting strip 413 slides along the slide groove 4633. The assembly plate 463 slides in a sealed manner within the housing 41. The volume of the chamber formed by the side of the assembly plate 463 away from the first motor 461 and the housing 41 changes, adjusting to adapt to wafers of different processes according to requirements. The second motor 471 drives the ring turntable 473 to rotate around its axis, and the ring turntable 473 drives the... The fan adjustment mechanism 476, evenly distributed around the circumference of the dry assembly, circulates the auxiliary gas inside the housing 41. The output end of the servo cylinder 474 is displaced according to the electrical control signal of the housing 2. The output end of the servo cylinder 474 drives the top plate rod 475 to move. The hinge buckle 4751 on the top plate rod 475 drives the fan adjustment mechanism 476 to adjust the tilt angle of the fan blades 4764, so that the angular momentum of the fan blades 4764 when pushing the air changes, and the columnar vortex formed is constantly changing, so that the wafer can fully contact the auxiliary gas and improve the wafer reaction efficiency.

[0051] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A VCSEL chip attached with a variable volume function dry vacuum system, characterized in that: The dry vacuum system comprises a platform (1), a machine box (2), a flexible metal pipe (3), a vacuum mechanism (4) and an auxiliary mechanism (5), the vacuum mechanism (4) comprises a box body (41) and a bottom foot (43), the machine box (2), the bottom foot (43) and the auxiliary mechanism (5) are fixedly connected with the platform (1), the box body (41) is provided with an air hole (411), the auxiliary mechanism (5) comprises a molecular pump (53), the flexible metal pipe (3) is fixedly connected with the air hole (411) and the molecular pump (53), and the vacuum mechanism (4) and the auxiliary mechanism (5) are connected with the machine box (2) through electric signals; The vacuum mechanism (4) further comprises a variable cavity mechanism (46) and an air uniformization mechanism (47), the variable cavity mechanism (46) comprises a first motor (461) and an assembly plate (463); The air uniformization mechanism (47) comprises a second motor (471), a second gear rod (472), a ring rotating disc (473) and a servo air cylinder (474), the second motor (471) is fixedly connected with the assembly plate (463), the output end of the second motor (471) is fixedly connected with the second gear rod (472), the ring rotating disc (473) is provided with a side ring gear slot (4731), the second gear rod (472) is in mesh with the side ring gear slot (4731), the ring rotating disc (473) is rotationally connected with the assembly plate (463), and the second motor (471) and the servo air cylinder (474) are connected with the machine box (2) through electric signals; The air uniformization mechanism (47) further comprises a top disc rod (475) and a fan adjusting mechanism (476), the servo air cylinder (474) is fixedly connected with the ring rotating disc (473), the output end of the servo air cylinder (474) is fixedly connected with the top disc rod (475), the assembly plate (463) is further provided with a center hole (4632), the top disc rod (475) is in contact with the center hole (4632), the fan adjusting mechanism (476) is provided with a plurality of groups, the plurality of groups of the fan adjusting mechanism (476) are evenly distributed along the circumference of the ring rotating disc (473), the top disc rod (475) is provided with a hinged buckle (4751), the fan adjusting mechanism (476) comprises a sliding rail (4761) and a fan blade (4764), the sliding rail (4761) is fixedly connected with the ring rotating disc (473), and the fan blade (4764) is hinged with the hinged buckle (4751); The fan adjusting mechanism (476) further comprises a hinged seat (4762) and a rotating shaft (4763), the hinged seat (4762) is slidingly connected with the sliding rail (4761), the rotating shaft (4763) is hinged with the hinged seat (4762), and the rotating shaft (4763) is fixedly connected with the fan blade (4764).

2. The dry vacuum system with variable capacitance function for VCSEL chip according to claim 1, characterized in that: The vacuum mechanism (4) further comprises a cabinet door (42), a heater (44), a vacuum gauge (45) and a storage plate (48), the cabinet door (42) is hinged with the box body (41), the foot (43), the heater (44), the vacuum gauge (45) and the storage plate (48) are fixedly connected with the box body (41), the cabinet door (42) is provided with an observation window (421), the foot (43) is arranged at the bottom of the box body (41), the heater (44) is provided with a plurality of groups, and the plurality of groups of the heater (44) are evenly arranged on the inner wall of the box body (41), and the vacuum gauge (45) is connected with the case (2) through an electric signal.

3. The dry vacuum system with a variable volume function attached to a VCSEL chip according to claim 2, characterized in that: The first motor (461) is fixedly connected with the box body (41), the air uniformizing mechanism (47) is fixedly connected with the assembly plate (463), and the first motor (461) and the air uniformizing mechanism (47) are connected with the case (2) through an electric signal.

4. The dry vacuum system with a variable volume function for a VCSEL chip according to claim 3, characterized in that: The variable cavity mechanism (46) further comprises a threaded rod (462), the box body (41) is further provided with a top hole (412) and a limiting strip (413), the output end of the first motor (461) is fixedly connected with the threaded rod (462), the threaded rod (462) is rotatably connected with the top hole (412), the assembly plate (463) is provided with an internal thread hole (4631) and a sliding groove (4633), the threaded rod (462) is connected with the internal thread hole (4631) through threads, the limiting strip (413) is in contact with the sliding groove (4633), and the assembly plate (463) is slidably connected with the box body (41).

5. The dry vacuum system with variable capacitance function for VCSEL chip according to claim 1, characterized in that: The auxiliary mechanism (5) further comprises a cold trap (51) and a dry vacuum pump (52), the cold trap (51), the dry vacuum pump (52) and the molecular pump (53) are fixedly connected with the ground platform (1), the dry vacuum pump (52) is connected with the cold trap (51) and the molecular pump (53) through pipelines, and the cold trap (51), the dry vacuum pump (52) and the molecular pump (53) are connected with the case (2) through an electric signal.

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