Phase-encoded metasurface based on exclusive-or logic

Abstract

The application discloses a phase encoding metasurface based on XOR logic, and relates to the technical field of metamaterial electromagnetic regulation, comprising a dielectric substrate; a metal structure symmetrical along a central axis is attached to the upper surface of the dielectric substrate; the metal structure comprises a metal frame and a rectangular metal sheet in the metal frame, wherein the two symmetrical sides of the rectangular metal sheet are connected by a PIN diode respectively; the two PIN diodes are in common anode or common cathode contact; a metal reflecting plate is arranged on the lower surface of the dielectric substrate; a metalized via hole is arranged between the rectangular metal sheet and the metal reflecting plate; the structure realizes the control logic current of XOR through the common anode / cathode design of the diode, constructs the rotational symmetry of the surface current, thereby constructs the PB phase, and greatly simplifies the design of the feed network.

Description

Technical Field

[0001] This invention relates to the field of metamaterial electromagnetic control technology, specifically to a phase-encoded metasurface based on XOR logic. Background Technology

[0002] With the development of metasurface electromagnetic communication technology, the demand for various types of intelligent communication devices continues to increase. As an important component of intelligent reflective surfaces (RIS), reconfigurable metasurfaces have attracted widespread attention from researchers. Currently, there are many types of metasurfaces, and different metasurfaces with different reconfiguration characteristics can be selected for different application scenarios. However, with the increase in the types of metasurfaces and the enrichment of design theories, the design difficulty of reconfigurable metasurfaces and the complexity of their depleted electrical networks also increase.

[0003] Metasurfaces, as two-dimensional metamaterials, are composed of artificially designed subwavelength structural units, exhibiting a unique ability to manipulate electromagnetic waves in multiple dimensions, including amplitude, phase, and polarization. Over the past few decades, metasurfaces have made significant progress in the field of electromagnetic wave manipulation, giving rise to many novel physical phenomena. With the popularization of intelligent technologies, the dynamic properties of reconfigurable metasurfaces have attracted widespread attention. Reconfigurable metasurfaces break through the limitations of traditional spatial functional integration, enabling rapid switching of functions over time. For example, patent CN222420822U discloses a spin-multiplexing dynamic holographic imaging device. By separately controlling the working state of the PIN diodes on the first and second arc arms, it achieves independent control of the amplitude and phase of left-hand and right-hand circularly polarized co-polarized reflections under the incident of orthogonal circularly polarized waves. Multiple dynamic non-chiral elements are arranged according to the controlled amplitude and phase distribution to form a spin-multiplexing dynamic holographic imaging device, generating two completely different pre-designed holographic images in their respective polarization channels. Patent CN120143571A discloses a tunable reflective polarization-independent controllable holographic metasurface. Two diodes are integrated in the X and Y directions of the metasurface unit. By changing the voltage across the diodes, a 180° phase change can be achieved, and the X and Y direction encodings are independent and do not interfere with each other. Utilizing the polarization-independent control and programmable characteristics of this unit, an coded metasurface is constructed. The metasurface can achieve holographic imaging effects through a specific coding array.

[0004] Existing methods all employ independent control of different polarizations. Patent CN222420822U modulates left-handed and right-handed polarized waves, while CN120143571A independently modulates x-line polarization and y-line polarization. These two methods focus on decoupling between polarizations. However, due to the complexity of the feeding network and bandwidth limitations of traditional reconfigurable metasurfaces, existing methods are difficult to adapt to complex electromagnetic control environments. Summary of the Invention

[0005] To address the shortcomings of existing technologies in adapting to complex electromagnetic control environments, this invention proposes a phase-encoded metasurface based on XOR logic. The phase-encoded metasurface is constructed by a surface-symmetrical metal structure, a dielectric substrate, a power supply network, and a metal reflector structure, thereby solving the problems existing in the prior art.

[0006] A phase-encoded metasurface based on XOR logic includes multiple array cells; each array cell includes:

[0007] Dielectric substrate;

[0008] A symmetrical metal structure along a central axis is attached to the upper surface of the dielectric substrate; the metal structure includes a metal frame and rectangular metal sheets connected to each other on both sides of the symmetrical sides of the metal frame by a PIN diode; the two PIN diodes are in common anode or common cathode contact.

[0009] A metal reflector is disposed on the lower surface of the dielectric substrate;

[0010] The power supply network includes a central power supply terminal and two side power supply terminals; the central power supply terminal is composed of a metal reflector and a metallized via that passes through the dielectric substrate and connects the metal reflector and the rectangular metal sheet, and is used to provide a bias voltage for the common terminal of the two PIN diodes; the two side power supply terminals are composed of a metal frame of the metal structure, and are used to provide a bias voltage for the non-common terminal of the two PIN diodes.

[0011] Furthermore, the metal structure is symmetrically rotated 180° around the center of the dielectric substrate.

[0012] Furthermore, the dielectric substrate is made of polytetrafluoroethylene with a dielectric constant of 2.65.

[0013] Furthermore, the PIN diode is an SMP1320-079LF.

[0014] Furthermore, a gap is provided between the metal reflector and the lower surface of the dielectric substrate.

[0015] Furthermore, the contact method of the two PIN diodes has an XOR logic characteristic, including the following four states: when the center feed is high voltage and the feeds on both sides are high voltage; when the center feed is low voltage and the feeds on both sides are low voltage; when the center feed is high voltage and the feeds on both sides are low voltage; when the center feed is low voltage and the feeds on both sides are high voltage; wherein, the electromagnetic response of the first state and the second state is consistent, the electromagnetic response of the third state and the fourth state is consistent, and the phase response of the first state and the second state differs from that of the third state and the fourth state by 180°; the high voltage is the voltage value that enables the PIN diode to conduct, and the low voltage is the voltage value that enables the PIN diode to cut off.

[0016] Furthermore, based on the symmetry of the array units, an XOR logic control network is constructed; the control network encodes and controls the array units through row and column cross-control; wherein, when the row and column are controlled separately, the same voltage at the cross position indicates a 0 phase, and different voltages indicate a 1 phase.

[0017] This invention provides a phase-encoded metasurface based on XOR logic, which has the following advantages:

[0018] This invention utilizes a surface-symmetrical metal structure to feed incident waves and generate surface currents. PIN diodes are used to control the different reflection phases of the incident waves. A dielectric substrate provides support for the metal structure and diodes. Metallized vias enable the feeding of the PIN diodes, and a metal reflector achieves total reflection of electromagnetic waves, thus constructing the metasurface unit structure. Based on the symmetry of this unit structure, one-dimensional control using row and column control can replace the traditional two-dimensional array control method to control the two-dimensional array. This structure simplifies the complexity from row × column to row + column, achieving dimensionality reduction at the structural design level. This simplifies the feed network design of the active control metasurface to adapt to more complex electromagnetic control environments. The overall structure exhibits stability, has a simple architecture, and is easy to mass-produce and apply. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the surface structure of the phase-encoded metasurface unit structure based on XOR logic in an embodiment of the present invention;

[0020] Figure 2 This is a perspective view of the phase-encoded metasurface unit structure based on XOR logic in an embodiment of the present invention;

[0021] Figure 3 This is a schematic diagram of the back reflective layer of the phase-encoded metasurface unit structure based on XOR logic in an embodiment of the present invention;

[0022] Figure 4This is a schematic diagram of the electromagnetic response of a phase-encoded metasurface unit based on XOR logic in an embodiment of the present invention;

[0023] Figure 5 This is a current distribution diagram under different power supply conditions in an embodiment of the present invention;

[0024] Figure 6 This is a schematic diagram of a row and column controlled two-dimensional array in an embodiment of the present invention;

[0025] Figure 7 This is a schematic diagram of the experimental verification process of phase-encoded metasurface communication with simplified XOR logic in an embodiment of the present invention;

[0026] Figure 8 This is a schematic diagram illustrating the design theory of XOR logic in an embodiment of the present invention. Detailed Implementation

[0027] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0028] This invention proposes a phase-encoded metasurface based on XOR logic, comprising a surface-symmetrical metal structure, a dielectric substrate, a feeding network, and a metal reflector. This structure achieves XOR control of the logic current through a common-anode / cathode diode design and constructs rotational symmetry of the surface current, thus forming a PB phase. This invention controls the distribution of the phase encoding based on XOR logic, thereby achieving control of a two-dimensional array solely through row and column cross-control. This structure simplifies the traditional two-dimensional active control array of metasurfaces to one dimension, greatly simplifying the design of the feeding network and laying the foundation for industrial-scale control of active control metasurfaces.

[0029] Specifically, the phase-encoded metasurface based on XOR logic proposed in this invention includes: an array composed of multiple units, the array comprising, for example, Figure 1The array shown consists of cells arranged in rows and columns to form a metasurface. Each array cell has a surface with a centrally symmetrical metal structure, two common anode / common cathode PIN diodes, a dielectric substrate, a feed terminal formed by metallized vias, and a metal reflector. The centrally symmetrical metal structure is attached to the upper surface of the dielectric substrate. The metal structure includes a metal frame and rectangular metal sheets connected to each side of the metal frame via PIN diodes. The two PIN diodes are in common anode or common cathode contact. The metal reflector is disposed on the lower surface of the dielectric substrate. The feed network includes a central feed terminal and two side feed terminals. The central feed terminal is reflected by a metal reflector. The plate and the metallized vias connecting the metal reflector and the rectangular metal sheet through the dielectric substrate are used to provide bias voltage to the common terminal of the two PIN diodes; the two feed terminals are composed of metal frames of metal structure, used to provide bias voltage to the non-common terminal of the two PIN diodes; the metal structure realizes the feeding of incident waves and forms surface current, and the PIN diodes realize the modulation of different reflection phases of incident electromagnetic waves. The dielectric substrate provides carrier support for the metal structure and diodes, the metallized vias realize the feeding effect of PIN diodes, and the metal reflector realizes the total reflection effect of electromagnetic waves.

[0030] The surface metal frame of the phase-encoded metasurface can be used as the feed end of the positive / negative electrode, and the reflective backplate on the back can be used as the feed end of the negative / positive electrode.

[0031] The surface metal structure is provided with a metal structure symmetrical along the central axis, and each of the two structures has a PIN diode. The structure is symmetrical when rotated 180° around the center. One unit of the phase-encoded metasurface embeds two PIN diodes, which are common anode / cathode contacts.

[0032] The common-pin diode contact method has XOR logic characteristics. This structure has the following four states: ① When the center feed is high voltage and the two side feeds are high voltage; ② When the center feed is low voltage and the two side feeds are low voltage; ③ When the center feed is high voltage and the two side feeds are low voltage; ④ When the center feed is low voltage and the two side feeds are high voltage. The electromagnetic responses of states ① and ② are consistent, and the electromagnetic responses of states ③ and ④ are consistent. The phase responses of states ① and ② are 180° different from those of states ③ and ④.

[0033] This structure can control a two-dimensional array using horizontal and vertical control methods. The phase-encoded metasurface can achieve encoding control of the two-dimensional array through one-dimensional control methods of row control and column control. That is, when the rows and columns are controlled separately, the same voltage at the intersection position indicates a phase of 0, and different voltages indicate a phase of 1.

[0034] This invention constructs an XOR logic control network by designing the symmetry of the unit structure. It replaces the traditional two-dimensional array control method with a one-dimensional control approach using row and column control to control a two-dimensional array. This structure simplifies the complexity of row × column to row + column complexity, achieving dimensionality reduction at the structural design level. This simplifies the feeder network design of active control metasurfaces to adapt to more complex electromagnetic control environments. The overall structure exhibits stability, has a simple architecture, and is easy to mass-produce and apply.

[0035] like Figures 1 to 7 The diagram shown is a schematic diagram of an embodiment of a phase-encoded metasurface based on XOR logic provided by the present invention. Its main body includes a metal structure symmetrical about the central axis, two common anode / common cathode PIN diodes, a dielectric substrate, a feed terminal formed by metallized vias, and a metal reflector.

[0036] The surface metal structure features symmetrical metal structures along the central axis, each containing a PIN diode. The structure is symmetrical when rotated 180° around the center. One unit of the phase-encoded metasurface based on XOR logic embeds two PIN diodes, which are common-anode / cathode contacts and are SMP1320-079LF diodes. The common-anode PIN diode contact exhibits XOR logic characteristics, resulting in four states: ① High voltage at the center and high voltage at both sides; ② Low voltage at the center and low voltage at both sides; ③ High voltage at the center and low voltage at both sides; ④ Low voltage at the center and high voltage at both sides. The electromagnetic responses of states ① and ② are identical, as are those of states ③ and ④, with a 180° phase difference between states ① / ② and states ③ / ④. The high voltage is the voltage value that enables the PIN diode to conduct, and the low voltage is the voltage value that enables it to cut off.

[0037] The dielectric substrate is made of polytetrafluoroethylene with a dielectric constant of 2.65, a loss of 0.1%, a thickness of h=3mm, and a size of 10mm.

[0038] This structure can control a two-dimensional array using horizontal and vertical control methods. When rows and columns are controlled separately, the same voltage at the intersection position indicates a 0-phase signal, while different voltages indicate a 1-phase signal. Encoding control of the two-dimensional array can be achieved through a one-dimensional control method using row and column control.

[0039] like Figure 1 The surface structure of this unit structure is shown. Figure 2 A perspective view of the unit structure is shown. Figure 3The back reflective layer of this unit structure is shown. The gap between the two structures is g1=1mm. All metal materials are copper, with an etching thickness of 0.017mm. The frame width is w=0.5mm, the horizontal length is px=8.5mm, and the vertical length is py=10mm. The rectangular pattern has a horizontal length lx=1.25mm and a vertical length ly=5mm. The distance between the two rectangular patterns is g2=3mm. The bottom layer is a metal reflective layer with a gap, which serves as both a bias line and a reflector for electromagnetic waves. The gap width is g3=0.5mm. The surface layer and the bottom layer are connected by a metallized via with a diameter of d=0.6mm.

[0040] Figure 4 This represents the electromagnetic response of the unit structure under different states. Figure 4 In the middle (a), the amplitude response is shown. Figure 4 In Figure (b), the phase response is shown. At 5.8 GHz, the phase response between states ① and ② and states ③ and ④ differs by 180°, with an amplitude greater than -1 dB.

[0041] Figure 5 The figure shows the current distribution of the unit in different states. The current distributions from left to right are defined as states ①②③④, where states ①② and ③④ exhibit rotational symmetry.

[0042] Figure 6 The control array of this phase-encoded metasurface based on XOR logic is shown. Figure 6 Image (a) shows the column control principle. Figure 6 Figure (b) illustrates the line control principle. Figure 6 Figure (c) illustrates the principle of row and column crossover control. Two-dimensional phase encoding regulation can be achieved through the crossover control of rows and columns.

[0043] Figure 7 Figure (a) shows the testing of the metasurface in a communication environment, and demonstrates that the same transmission angle can be achieved under XOR encoding, illustrating the functional verification of communication transmission achieved by the XOR-based phase-coded metasurface in different states. Figure 7 (b) demonstrates video transmission at a 56-degree angle. Figure 7 Figure (c) demonstrates the video transmission function with the encoding sequence reversed. Both figures can achieve the same transmission function with the reverse sequence.

[0044] Figure 8The design theory of the XOR logic is illustrated in the diagram. In the two states where the voltages at the diode feed terminals are different, the diodes form a PB phase based on their symmetry, thus achieving an equivalent phase modulation effect. In the two states where the voltages at the diode feed terminals are the same, since there is no voltage difference across the diodes, neither diode is conducting, thus achieving an equivalent phase modulation effect.

[0045] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A phase-encoded metasurface based on XOR logic, characterized in that, It includes multiple array units; each array unit includes: Dielectric substrate; A symmetrical metal structure along a central axis is attached to the upper surface of the dielectric substrate; the metal structure includes a metal frame and rectangular metal sheets connected to each other on both sides of the symmetrical sides of the metal frame by a PIN diode; the two PIN diodes are in common anode or common cathode contact. A metal reflector is disposed on the lower surface of the dielectric substrate; The power supply network includes a central power supply terminal and two side power supply terminals; the central power supply terminal is composed of a metal reflector and a metallized via that passes through the dielectric substrate and connects the metal reflector and the rectangular metal sheet, and is used to provide a bias voltage for the common terminal of the two PIN diodes; the two side power supply terminals are composed of a metal frame of the metal structure, and are used to provide a bias voltage for the non-common terminal of the two PIN diodes; The metal structure is symmetrically rotated 180° around the center of the dielectric substrate. The two PIN diodes have XOR logic characteristics, including the following four states: high voltage at the center and high voltage at both sides; low voltage at the center and low voltage at both sides; high voltage at the center and low voltage at both sides; and low voltage at the center and high voltage at both sides. The electromagnetic responses of the first and second states are consistent, as are the electromagnetic responses of the third and fourth states. The phase responses of the first and second states differ from those of the third and fourth states by 180°. The high voltage is the voltage value that enables the PIN diodes to conduct, and the low voltage is the voltage value that enables the PIN diodes to turn off. An XOR logic control network is constructed based on the symmetry of the array units. The control network encodes and controls the array units through row and column cross-control. When the rows and columns are controlled separately, the same voltage at the cross-position is displayed as 0 phase, and different voltages are displayed as 1 phase.

2. The phase-encoded metasurface based on XOR logic according to claim 1, characterized in that, The dielectric substrate is made of polytetrafluoroethylene with a dielectric constant of 2.

65.

3. The phase-encoded metasurface based on XOR logic according to claim 1, characterized in that, The PIN diode is SMP1320-079LF.

4. The phase-encoded metasurface based on XOR logic according to claim 1, characterized in that, A gap is provided between the metal reflector and the lower surface of the dielectric substrate.

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